Texas Instruments Transistor Diode Data Book Text
April 24, 2017 | Author: 4xzibit | Category: N/A
Short Description
Databook containing specifications on TI Diodes and Transistors...
Description
The Engineering
Staff of
TEXAS INSTRUMENTS INCORPORATED Components Group
The Transistor
and Diode Data Book for
Design Engineers
Texas Instruments INCORPORATED
S(%6
TYPE NUMBER INDEX
El
GLOSSARY TRANSISTOR SELECTION GUIDES
TRANSISTOR INTERCHANGEABILITY
TRANSISTOR DATA SHEETS
TRANSISTOR CHIP CHARACTERIZATION
TRANSISTOR QUALITY AND RELIABILITY INFORMATION
DIODE PRODUCT SPECTRUM
DIODE SELECTION GUIDES
DIODE INTERCHANGEABILITY
DIODE DATASHEETS
SENSISTORS®
Ml
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B
The Transistor
and Diode Data Book for
Design Engineers
First Edition
Texas Instruments INCORPORATED
CC-413 71242-73-CSS
p rinted
in
u.S.A.
IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in
order
to
improve design
and
to
supply
the
best
product
possible.
Tl
cannot assume any responsibility for any circuits shown or
represent that they are free
from patent infringement.
Copyright
©
1973
Texas Instruments Incorporated
Third Printing
THE TRANSISTOR AND DIODE DATA BOOK Since 1954,
when Texas Instruments introduced
the
first silicon transistor
to the marketplace, and later with the invention of
the integrated circuit, Tl has been pre-eminent in the semiconductor industry.
New semiconductor products are introduced almost daily; new applications for semiconductor products are being found or comtemplated at an ever-increasing rate, especially in the consumer and automotive fields. It is a difficult task for the equipment design engineer to stay abreast of all of the discrete and integrated-circuit products available to him in his efforts to choose the best device at the optimum cost effectiveness. It is the aim of Texas Instruments to provide the design engineer with the the least
Due
maximum amount of accurate product data organized amount of time. amount of data
in
such a manner that the pertinent data
may be
located in
it would be inconvenient to present Tl's complete line of standard discrete products in a power products are described in The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404); optoelectronic products are presented in The Optoelectronics Data Book for Design Engineers, First Edition (CC-405). For ease of reference, all current devices listed in those two volumes are contained in the Type Number Index (Section O) herein. This 1248-page volume is designed to complement those two volumes and essentially complete the current description of Tl's line of discrete semiconductors by adding all low-power silicon transistors and diodes. (Generally, "low-power" denotes free-air power dissipation of one watt or less.)
to the
single
volume. Tl's broad
involved,
line of
This volume
contains over 800 silicon transistor types (grown-junction, multijunction, unijunction, and field-effect and over 500 silicon diode types (switching, rectifying, voltage-regulating, voltage-variable-capacitance, and general purpose diodes as well as multielement diode arrays and matrices), over 150 of which are being announced for the transistors)
first
time.
Although this volume offers specification and interchangeability data only for low-power silicon transistors and diodes, complete technical information for all Tl semiconductor products is available from your nearest Tl field-sales office, local authorized Tl distributor, or by writing direct to: Marketing and Information Services, Texas Instruments Incorporated, P.O. Box 5012, Dallas, Texas 75222.
We hope library.
that
you
will find
The Transistor and Diode Data Book for Design Engineers
a useful addition to
your technical
Type Number Index
TYPE NUMBER INDEX
TYPE NO.
SEC-PAGE
SEC-PAGE
TYPE NO.
TYPE NO.
SEC-PAGE
1N261
10-1
1N704
10-11
1N748
10-15
1N456
10-2
10-11
10-2
10-11
1N748A 1N749 1N749A 1N750 1N750A
10-15
1N456A 1N457 1N4S7A 1N458 1N468A
10-11
1N751
10-15
1N459 1N459A
10-2
10-11
1N461
10-2
1N461A 1N462 1N462A 1N463 1N463A 1N464 1N464A 1N482 1N482A 1N482B 1N483 1N483A 1N483B 1N484
10-2
10-2
1N704A 1N705 1N705A 1N706 1N706A 1N707 1N707A 1N708 1N708A 1N709 1N709A 1N710 1N710A
10-2
1N711
10-13
10-2
10-13
10-2
1N711A 1N712 1N712A
10-2
1N713
10-13
10-2
10-13
10-2 10-2 10-2 10-2
10-11 10-11 10-11
10-15 10-15 10-15 10-15
10-2
1N713A 1N714 1N714A 1N715 1N715A
10-13
1N751A 1N752 1N752A 1N753 1N753A 1N754 1N754A 1N755 1N755A 1N756 1N756A 1N757 1N757A 1N758 1N758A 1N759 1N759A
1N4S4A 1N484B 1N48S 1N48BA 1N48SB 1N625 1N626 1N627 1N628 1N629 1N643 1N645 1N645A 1N646 1N647 1N648 1N649 1N659 1N660
10-2
1N716
10-13
1N761
10-17
10-2
1N716A
10-13
1N762
10-17
10-2
1N717
10-13
1N763
10-17
10-2
10-13
1N764
10-17
10-13
10-17
10-13
1N765 1N766
10-13
1N767
10-17
106 104 10*
1N717A 1N718 1N718A 1N719 1N719A 1N720 1N720A
10-13
10-7
1N721
10-13
1N768 1N769 1N914 1N914A
10-8
10-13
1N661
10-9
1N721A 1N722 1N722A 1N723 1N723A 1N724 1N724A 1N725 1N725A 1N726 1N726A
10-13
1N746 1N746A
10-15
1N747 1N747A
10-15
10-2
10-2 10-2
10-2
10-2 10-2
10-2
10-2
106
1M
10-8
10-8
10-8 10-8
10-8 10-9 10-9
1N662
10-10
1N663 1N702
10-10
1N702A 1N703 1N703A
10-11
10-11
10-11 10-11
10-13
10-13 10-13 10-13 10-13
.....
.....
10-13
10-13 10-13
10-13
10-13 10-13
10-13
10-13
10-15 10-15
10-15 10-15
10-15 10-15 10-15 10-15
10-15 10-15 10-15
10-15 10-15 10-15
10-17
10-17 10-17 10-19 10-19
1N914B 1N915
10-19
10-13
1N916
10-19
10-13
1N916A 1N916B 1N917 1N957 1N957A 1N957B 1N958 1N958A 1N958B 1N959 1N959A 1N959B
10-19
10-13
10-13 10-13 10-13 10-13
10-13
10-15
10-15
•
10-15
10-13
Instruments Texas INCORPORATED POST OFFICE BOX 5012
10-15
10-15
DALLAS. TEXAS 78222
10-19
10-19 10-19 10-22 10-22 10-22 10-22 10-22 10-22
10-22 10-22 10-22
TYPE NUMBER INDEX
TYPE NO. 1N960
1N960A 1N960B 1N961
1N961A 1N961B 1N962 1N962A 1N962B 1N963 1N963A 1N963B 1N964 1N964A 1N964B 1N98S 1N965A 1N965B 1N966 1N966A 1N966B 1N967 1N967A 1N967B 1N968 1N968A 1N968B 1N969 1N969A 1N969B 1N970 1N970A 1N970B 1N971
1N971A 1N971B 1N972 1N972A 1N972B 1N973 1N973A 1N973B 1N2069A 1N2070 1N2070A 1N2071
SEC-PAGE
SEC-PAGE
TYPE NO.
.
.
.
.
10-22
1N3070
.
.
.
.
.
10-28
1N4534
.
.
.
.
.
10-22
1N3506
.
.
.
.
.
10-30
1N4S36
.
.
.
.
.
10-22
1N3S07
.
.
.
.
.
10-30
.
.
.
.
.
10-22
1N3S08
.
.
.
.
.
10-30
1N4606 1N4607
.
.
.
.
.
10-22
.
.
.
.
.
10-30
1N4608
.
.
.
.
.
10-22
1N3509 1N3510 1N3511 1N3S12
.
.
.
.
.
10-30
.
.
.
.
.
10-30
.
.
.
.
.
10-30
.
.
.
.
.
10-30
.
.
.
.
.
10-30
1N4727 1N4728 1N4728A 1N4729 1N4729A
.
.
.
.
.
10-30
.
.
.
.
.
10-30
1N4730 1N4730A
.
.
.
.
.
10-30
1N4731
.
.
.
.
.
10-30
.
.
.
.
.
10-30
.
.
.
.
.
10-22
.
.
.
.
.
10-22
1N3513 1N3514
.
.
.
.
.
10-22
.
.
.
.
.
10-22
.
.
.
.
.
10-22
.
.
.
.
.
10-22
1N3515 1N3516
.
.
.
.
.
10-22
1N3517
.
.
.
.
.
10-22
.
.
.
.
.
10-22
1N3518 1N3S19
.
.
.
.
.
10-22
1N3S20
.
.
.
.
.
10-30
.
.
.
.
.
10-22
1N3521
.
.
.
.
.
10-30
.
.
.
.
.
10-22
1N3522
.
.
.
.
.
10-30
.
.
.
.
.
10-22
1N3523
.
.
.
.
.
10-30
.
.
.
.
.
10-22
1N3524
.
.
.
.
.
10-30
.
.
.
.
.
10-22
.
.
.
.
.
10-30
.
.
.
.
.
10-22
1N3525 1N3526
.
.
.
.
.
10-30
.
.
.
.
.
10-22
1N3S27
.
.
.
.
.
10-30
.
.
.
.
.
10-22
1N3S28
.
.
.
.
.
10-30
.
.
.
.
.
10-22
1N3529
.
.
.
.
.
10-30
1N4731A 1N4732 1N4732A 1N4733 1N4733A 1N4734 1N4734A 1N4735 1N4735A 1N4736 1N4736A 1N4737
.
.
.
.
.
10-22
1N3530
.
.
.
.
.
10-30
1N4737A
.
.
.
.
.
10-22
1N4001
.
.
.
.
.
10-32
.
.
.
.
.
10-22
1N4002
.
.
.
.
.
10-32
1N4738 1N4738A
.
.
.
.
.
10-22
1N4003
.
.
.
.
.
10-32
1N4739
.
.
.
.
.
10-22
.
.
.
.
.
10-32
.
.
.
.
.
10-22
1N4004 1N4005
.
.
.
.
.
10-32
.
.
.
.
.
10-22
.
.
.
.
.
10-32
.
.
.
.
.
10-22
.
.
.
.
.
10-32
1N4741
.
.
.
.
.
10-22
1N4008 1N4007 1N4148
1N4739A 1N4740 1N4740A
.
.
.
.
.
10-34
1N4741A 1N4742 1N4742A 1N4743 1N4743A 1N4744 1N4744A 1N474S 1N4745A 1N4746 1N4746A 1N4747 1N4747A 1N4748 1N4748A 1N4749 1N4749A
.
.
.
.
.
10-22
1N4149
.
.
.
.
.
10-34
.
.
.
.
.
10-22
1N4150
.
.
.
.
.
10-36
.
.
.
.
.
10-22
1N41S1
.
.
.
.
.
10-38
.
.
.
.
.
10-22
1N4152
.
.
.
.
.
10-38
.
.
.
.
.
10-22
.
.
.
.
.
10-38
.
.
.
.
.
10-22
1N4163 1N4154
.
.
.
.
.
10-38
.
.
.
.
.
10-22
1N4305
.
.
.
.
.
10-40
.
.
.
.
.
10-22
1N4444
.
.
.
.
.
10-40
1N4446
.
.
.
.
.
10-42
.
.
.
.
.
10-42
.
.
10-24
1N4447
.
.
.
10-24
1N4448
.
.
.
.
.
10-42
.
.
.
10-24
1N4449
.
.
.
.
.
10-42
.
.
.
.
.
1N2071A 1N2175 1N3064
TYPE NO.
.
.
.
.
10-24
1N44S4
.
.
.
.
.
10-44
.
.
.
10-24
1N4531
.
.
.
.
.
10-46
.
.
.
.
.
10-46
.
.
.
.
.
10-46
.
.
.
.
.
OPTO
1N4S32
.
.
.
.
.
10-26
1N4533
OPTO— Refer to The
Optoelectronics Data Book for Design Engineers, First Edition (CC405).
Instruments Texas INCORPORATED POST OFFICE BOX 9012
•
DALLAS. TEXAS 75222
SEC-PAGE 10-46
.
10-46
.
10-48
.
1048
.
10-48
.
10-50
.
10-52
10-52 .
10-52
10-52 .
10-52
10-52 10-52 10-52 .
1052
.
10-52
10-52
10-52 .
10-52 10-52
.
10-52 10-52
.
10-52 10-52
.
10-52 10-52
.
10-52
10-52 .
10-52
10-52 .
10-52 10-52
.
10-52
10-52 .
10-52 10-52
.
10-52
.
10-52
10-52
10-52 .
10-52 10-52
.
10-52
10-52 .
10-52 10-52
.
10-52 10-52
.
10-52 10-52
TYPE
TYPE NO. 1N47S0 1N4750A 1N4761
1N4751A 1N4752 1N4752A 1N4938 1N5226 1N5228A 1NS226B 1NS227 1N6227A 1N5227B 1N5228 1NB228A 1N5228B 1N5229 1N5229A 1N5229B 1NS230 1N5230A 1NB230B
.
.
SEC-PAGE 10-62
10-52
1N5241
10-52
.
10-64
.
10-66
1N6341A 1N5241B 1N5242 1N5242A 1N5242B
10-58
1N5243
10-56
.
10-52 10-62
10-56
1N5243A 1N5243B 1N6244 1N5244A 1N5244B 1N6246 1N5245A 1N5245B 1N5246 1N5246A 1N5246B 1N5247 1N5247A 1N5247B 1N5248 1N5248A 1N5248B
1NS232A
10-66
1N5249
1NB232B 1N5233 1N6233A
10-56
1N5231
.
10-56 10-56 .
10-56
.
1NS23S 1NS23SA 1NS23BB 1NB236
1NB236A 1N6238B 1N5237 1NB237A 1NS237B 1N6238 1NB238A 1NB23SB 1NS239 1NS239A 1N5239B 1NS240 *Not shown
.
.
10-59
1N5773
10-59
10-56
1N5774
10-59
.
10-56
1N5775 2N117
4-1
10-56
10-59
4-11
4-12
10-56 10-56
1N5250 1N5250A
10-56
1N5250B
10-56
1N6251
10-56
10-56
1N5251A 1N5251B 1N5252 1N62S2A
10-66
1N5262B
10-56
1N5253
10-56
1N5253A 1N5253B 1N5264 1N5254A 1N5254B 1NS2S5 1N5255A 1N5255B 1N5256 1N5256A 1N5256B
10-56
10-66
10-66 10-66 10-56 10-56 10-56
10-56 .
1N5772
10-56
2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N389 2N424 2N478 2N479 2N480 2N489 2N489A 2N489B 2N490 2N490A 2N490B 2N491 2N491A 2N491B
10-56
.
10-56
10-59
10-56
10-56
.
.
10-59 10-59
1N5249B
10-56
.
10-59
10-56
10-56
.
10-56
OPTO OPTO OPTO OPTO
10-56
10-56
1N6234B
1N5771
10-56
10-56
2N335
10-66 10-66
.
10-56
10-56 10-56
10-56
.... ....
10-56
10-66
.
10-56
1N5257A 1N5257B 1N5722 1N5723 1N5724 1N5725 1M5768 1N5769 1N5770
1N5249A
10-66 10-58
.
10-56
10-66
.
SEC-PAGE
1N5257
10-56
.
TYPE NO.
10-56
10-56
10-56 .
....
2N118 2N118A 2N119 2N120 2N243 2N244 2N263 2N264 2N332 2N333 2N334
10-56 10-66
1N6231A 1N5231B
1NS233B 1NS234 1NS234A
10-56
10-56
.
1N5232
10-66
SEC-PAGE
TYPE NO. 1N5240A 1N6240B
10-52
NUMBER INDEX
10-66
10-56 10-56
.
10-56 10-56
10-56
.
10-56 10-56
10-56
.
10-56
10-56 .
10-56
.
10-66
10-56 10-56
.
10-56 10-56
10-56
.
10-56
10-56 10-56
.
10-56 10-56
10-56
.
10-56
10-56 10-56
.
10-56
10-56
10-56
.
10-56
10-56
4-2
4-3 4-4 4-5 4-6
4« * *
4-8 4-9
4-10
4-13 4-14
4-15 4-15 4-15
4-15 4-15
POWER POWER * •
*
4-20
4-20 4-20 4-20 4-20
4-20
4-20 4-20 4-20
data book but still available from Texas Instruments. OPTO— Refer to The Optoelectronics Data Book for Design Engineers, F irst Edition (CC-405). POWER— Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404) in this
Texas INCORPORATED Instruments POST OFFICE BOX 9012
•
DALLAS. TEXAS 7S222
0-3
TYPE NUMBER INDEX
TYPE NO.
4-20
2N1048B
2N492A 2N492B 2N493 2N493A 2N493B
4-20
2N1049 2N1049A
4-20
4-20
2N1049B 2N1050 2N1050A
POWER POWER
2N1050B 2N1131
*
2N1132 2N1149 2N1150
4-20 4-20
2N497
.
.
.
.
.
2N498
.
.
.
.
.
2N541
.
.
.
.
.
.
.
*
.
.
.
.
.
*
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
2N717
2N718
2N542 2N543 2N656 2N657 2N696
2N697 2N698 2N699
SEC-PAGE
TYPE NO.
SEC-PAGE
2N492
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
POWER POWER POWER POWER POWER POWER POWER
.
.
.
.
.
4-61
.
.
.
.
.
4-61
.
.
.
.
.
4-63
.
.
.
.
.
4-63
POWER POWER
2N1151
.
.
.
.
.
4*3
2N1152
.
.
.
.
.
4-63
.
4-23
2N1153
.
.
.
.
.
4-63
.
.
4-23
2N1154
.
.
.
.
.
4-65
.
.
.
4-25
.
.
.
.
.
4-65
.
.
.
.
4-25
2N1155 2N1156
.
.
.
.
.
4-65
.
.
.
.
.
4-27
2N1276
.
.
.
.
.
.
.
4-27
2N1277
.
.
4-27
2N1278 2N1279
.
.
2N718A 2N719 2N719A 2N720 2N720A
4-31
4-31
2N1420 2N1507 2N1566
4-31 4-31
...
* *
.
.
4-68
.
.
.
.
.
4-68
2N2160 2N2192 2N2192A
.
.
.
.
4-70
2N2193
..."
4-34
2N1586
.
.
2N722
.
.
.
.
.
4-34
2N1587
.
.
2N730
.
.
.
.
.
4-36
2N1588
.
.
2N731
.
.
.
.
.
4-36
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4-38
.
.
.
.
.
4-38
2N1591
2N851
.
.
.
.
.
4-40
.
.
.
.
.
4-40
2N1592 2N1593
.
.
.
.
.
4-42
2N871
.
.
.
.
.
4-42
2N910
.
.
.
.
.
4-44
2N911
.
.
.
.
.
4-44
2N912
.
.
.
.
.
4-44
2N917
.
.
.
.
.
4-46
.
.
.
.
.
4-48
2N1599 2N1613
.
.
.
.
.
4-52
2N1671
.
.
.
.
.
4-52
.
.
.
.
.
4-54
2N1671A 2N1671B
.
.
.
.
.
4-56
2N1711
.
.
.
.
.
4-57
.
.
.
.
.
4-59
2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720
2N852 2N870
2N918 2N929 2N930 2N956 2N997 2N998 2N999 2N1047
2N1047A 2N1047B 2N1048 2N1048A
.... .... ....
2N1594 2N1595 2N1596 2N1597 2N1598
POWER POWER POWER POWER POWER
*
.
.
... ... ... ... ...
0-4
in this
data book but
still
*
2N2221
.
POWER POWER POWER POWER POWER
.
.
4-71
.
.
.
4-73
.
.
.
4-73
.
.
.
4-73
.
.
.
4-75
2N2270 2N2303
POWER POWER POWER POWER POWER POWER POWER
2N2386 2N2386A 2N2387 2N2388 2N2389 2N2390 2N2393
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
*
available
First Edition (CC-404).
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
4-77 4-77
POWER POWER 4-79 4-79 4-79 4-81
4-83
....
2N2221A 2N2222 2N2222A
4-83
POWER POWER 4-86
4-88
....
4-88 4-88
....
2N2220
*
POWER POWER POWER POWER POWER POWER POWER 4-77
2N2194 2N2194A
*
...
*
....
....
*
*
....
2N2193A
2N2217 2N2218 2N2218A 2N2219 2N2219A
from Texas Instruments. POWER— Refer to The Power Semiconductor Data Book for Design Engineers, •Not shown
*
...
.
.
2N2151
.
.
.
«
.
.
.
2N1724A 2N1725 2N1889 2N1890 2N1893 2N1936 2N1937 2N1973 2N1974 2N1975 2N2060 2N2102 2N2102A 2N2150
.
.
SEC-PAGE
2N1723 2N1724
.
.
2N849 2N850
2N1722 2N1722A
.
2N721
2N1589 2N1590
TYPE NO. 2N1721
4-88
4-88 4-88 4-93 4-93
....
4-93 4-93
....
4-93 4-93 4-93
....
4-93 4-93
....
4-93
4-105
2N2223 2N2223A
....
2N2243 2N2243A
....
4-105 4-107 4-107 4-112
4-114 4-116
....
4-116 4-117 4-117
4-119 4-119 4-121
TYPE NUMBER INDEX
SEC-PAGE
TYPE NO. 2N2394 2N2395
4-121
2N2396 2N2432 2N2432A 2N2453 2N2483
4-123
4-123
4-125
....
4-125 4-127
4-129
2N2484 2N2497 2N2498
4-129 4-131
4-131
2N2499 2N2500 2N2537 2N2538
4-131 4-131
4-132
4-132
SEC-PAGE
TYPE NO. 2N2916A 2N2917 2N2918 2N2919 2N2919A 2N2920 2N2920A 2N2944 2N2944A 2N2945 2N2945A 2N2946 2N2946A 2N2972 2N2973 2N2974
....
TYPE NO.
SEC-PAGE
4-163
2N3043
4-183
4-163
2N3044 2N3045
4-183
4-163
4-183
4-163
2N3046
4-183
....
4-163
4-183
....
4-163 4-167
2N3047 2N3048 2N3049 2N3050
4-167
2N3051
4-185
4-167
2N3052
4-187
4-167
2N3053 2N3055 2N3114 2N3117
4-189
4-194
4-169
2N3244 2N3245
4-169
2N3250
4-169
2N3250A 2N3251
4-163
.... ....
4-167
....
4-167
4-169
4-183
4-185 4-185
POWER 4-190 4-192
2N2539 2N2540
4-132
2N2586
4-136
2N2604
4-138
2N2975 2N2976
2N2605
4-138
2N2977
4-169
2N2608 2N2609
4-142
2N2978 2N2979
4-169
2N3251A
4-142
4-169
2N3252
4-201
2N2639
4-143
2N2987
2N3253
4-201
2N2640 2N2641
4-143
2N2988
4-143
2N3263 2N3264
2N2642
4-143
2N2989 2N2990
2N2643
4-143
2N2991
POWER POWER POWER POWER
2N2644
4-143
2N2646
4-145
2N2992 2N2993
2N2647
4-145
2N2994
2N2802
4-147
2N3001
2N2803 2N2804 2N2805
4-147
2N3002
4-147
2IM3003
4-147
2N2806 2N2807
4-147
2N3004 2N3005 2N3006 2N3007
POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER
4-132
4-147
POWER
2N2880 2N2894 2N2904
2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N2913 2N2914 2N2915 2N2915A 2N2916
4-149 4-151
....
.... ....
....
POWER — Refer to
2N3O08 2N3012
4-173
4-199
....
4-199 4-199
....
4-199
2N3266 2N3329
4-203
2N3330
4-203
2N3331
4-203
2N3332 2N3347 2N3348 2N3349 2N3350
4-203 4-204 4-204
4-204 4-204
2N3351
4-204
2N3352 2N3418 2N3419
4-204
4-151
2N3015
4-175
2N3420
2N3021
2N3421
4-151
2N3022
4-151
4-151
2N3023 2N3024 2N3025 2N3026
POWER POWER POWER POWER POWER POWER
4-163
2N3036
4-163
4-151
4-194
2N3265
4-151
POWER POWER POWER POWER POWER POWER
2N3439 2N3440 2N3444
4-208
4-210
4-177
2N3458 2N3459 2N3460
2N3037
4-179
2N3467
4-212
4-163
2N3038
4-179
2N3468
4-212
4-163
2N3039 2N3040
4-181
2N3485 2N3485A
4-215
4-151
....
4-169
4-163
The Power Semiconductor Data Book
4-181
4-210 4-210
....
4-215
for Design Engineers, First Edition (CC-404).
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
0-5
TYPE
NUMBER INDEX
TYPE NO.
4-215
TYPE NO. 2N3790
4-215
2N3791
SEC-PAGE
SEC-PAGE
TYPE NO.
4-217
2N3792
POWER POWER POWER
2N3495
4-217
2N3798
4-265
2N4005 2N4013 2N4014 2N4026
2N3486
2N3486A 2N3494
....
SEC-PAGE
POWER 4-302 4-302
4-305
2N3496
4-217
2N3799
4-265
2N4027
4-305
2N3497
4-217
2N3806
4-267
4-305
2N3502
4-223
2N3807
4-267
2N4028 2N4029
2N3503 2N3504 2N3505 2N3551
4-223
4-267
2N4030 2N4031 2N4032 2N4033 2N4058
4-305
2N4059 2N4060 2N4061
4-311
2N4062 2N4091
4-311
2N4092 2N4093
4-313
2N4104 2N4123 2N4124 2N4125 2N4126 2N4138
4-316
2N3554 2N3570
4-229
2N3808 2N3809 2N3810 2N3811 2N3819 2N3820
4-233
2N3821
4-272
2N3571
4-233
2N3822
4-272
2N3572 2N3576
4-233
4-272
2N3S83
POWER POWER POWER
2N3552
4-223 4-223
.....
POWER POWER
4-267
4-267 4-267 4-270 4-271
2N3634
4-239
2N3635 2N3636
4-239
2N3637
4-239
2N3680
4-248
2N3823 2N3824 2N3829 2N3838 2N3846 2N3847 2N3902 2N3903 2N3904 2N3905
2N3702
4-250
2N3906
4-286
2N3703
4-250
2N3909
4-289
2N3704
4-252
2N3705 2N3706
4-2S2
2N3909A 2N3962
2N3707
4-254
2N3708
4-254
2N3709 2N3710
4-254 4-254
2N3963 2N3964 2N3965 2N3966 2N3970
2N3711
4-254
2N3971
4-295
2N3713
POWER POWER POWER POWER POWER POWER
2N3972
4-295 4-298
4-237
2N3584 2N3S85
4-239
4-252
2N3734
4-262
2N3980 2N3993 2N3993A 2N3994 2N3994A 2N3996 2N3997 2N3998 2N3999 2N4000
2N3735 2N3771 2N3772
4-262
2N4001
POWER POWER POWER
2N4O02 2N4003
2N3714 2N3715 2N3716 2N3719 2N3720 2N3724 2N3724A
2N3725 2N3725A
2N3789
4-256
....
4-256 4-256
....
4-256
POWER— Refer to The Power Semiconductor
4-272
4-278 4-280
POWER POWER POWER 4-283 4-283 4-286
....
4-289
4-290 4-290 4-290 4-290 4-293
4-295
4-300
....
4-300 4-300
....
4-300
POWER POWER POWER POWER POWER POWER POWER POWER POWER
2N4004
Data Book for Design Engineers, First Edition (CC-404).
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
2N4220 2N4220A 2N4221 2N4221A 2N4222 2N4222A 2N4223 2N4224 2N4240 2N4252 2N4253 2N4260 2N4261 2N4300 2N4301 2N4391 2N4392 2N4393 2N4398 2N4399 2N4402 2N4403 2N4409 2N4410 2N4416
4-305
4-305
4-305 4-305 4-311
4-311 4-311
4-313
4-313
4-318 4-318 4-321 4-321
4-324 4-326
....
4-326
....
4-326
....
4-326
4-326
4-326
4-328 4-328
POWER 4-332
4-332 4-333 4-333
POWER POWER 4-337 4-337 4-337
POWER POWER 4-340 4-340 4-343
4-343 4-345
TYPE NUMBER INDEX
TYPE NO. 2N4416A 2N4423
SEC-PAGE 4-345 4-348
TYPE NO. 2N5047
2N4851
4-350
2N4852
4-350
2N5058 2N5059 2N5060
2N4853 2N4864
4-350
2N5061
4-352
2N4855 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A 2N4859 2N4859A 2N4860 2N4860A 2N4861 2M4861A
4-352
2N5062 2N5063
4-355
2N5064
4-355
2N5067
4-355
2N5068
4-355
2N5069 2N5086
....
....
4-355
....
4-355
4-355
2N5087 2N5147 2N5148
4-355
2N5149
4-355
2N5150
4-355
2N5151
4-355
2N5152
4-355
.... ....
....
2N4891
4-359
2N5153
2N4892
4-359
2N5154
2N4893 2N4894
4-359
2N5157
4-359
2N5209 2N5210 2N5219 2N5220
2N4901
2N4902
2N4903 2N4904 2N4905 2N4906 2N4913 2N4914 2N4915 2N4947 2N4948 2N4949 2N4996 2N4997 2N4998 2N4999 2N5000 2NS001 2N5002 2N5003
2NS003 2N6004 2N5005 2N5038 2N5039 2N5045 2NS046
.....
POWER POWER POWER POWER POWER POWER POWER POWER POWER 4-361 4-361 4-361
4-363 4-363
POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER 4-365 4-365
POWER— Rafar to The Power Semiconductor
SEC-PAGE 4-365 4-367 4-367
POWER POWER POWER POWER POWER POWER POWER POWER 4-371
4-371
POWER POWER POWER POWER POWER POWER POWER POWER POWER 4-375 4-375 4-377 4-379
2N5221
4-381
2N5222 2N5223 2N5225 2N5226 2N5227 2N5241 2N5245 2N5246 2N5247 2N5248
4-383
2N5301
2N5302
4-385 4-387
4-389 4-391
POWER 4-393 4-393
4-393 4-396
..... .....
2N5303 2N5332
POWER POWER POWER 4-397
2N5333
POWER
2N5358 2N53S9 2W5360
4-400
2N5361
4-400
4400 4-400
2N5362
4-400
2N5363
4-400
2N5364 2N5384
4-400
POWER
TYPE NO. 2N5385 2N5386 2N5387 2N5388 2N5389 2N5390 2N5397 2N5398 2N5399 2N5400
SEC-PAGE
POWER POWER POWER POWER POWER POWER 4-403
4-405 4-407 4-414
2N5401
4-414
2N5447 2N5448
4-416
2N5449 2N5450
4-418
2N5451
4-418
2N5460 2N5461 2N5462 2N5525 2N5526 2N5545 2N5546 2N5547 2N5549 2N5550 2N5551 2N5671 2N5672 2N5683 2N5684 2N5685 2N5686 2N5758 2N5759 2N5760 2N5867 2N5868 2N5869 2N5870 2N5871 2N5872 2N5873
4-420
2N5874 2N5875 2N5876 2N5877 2N5878 2N5879 2N5880
4-416
4-418
4-420
4420 4-422 4-422
4423 4-423 4-423 4-425 4-427 4-427
POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER
Data Book for Design Engineers, First Edition (CC-404).
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TEXAS 75322
0-7
TYPE NUMBER INDEX
+429 4-429
3N111
4-450
2N5951
4-429 4-429
2N6116
4-433
3N128 3N153 3N155 3N155A
4-452
2NS952 2N5953 2N6117
4-433
4-456
2N6118
4-433
3N156 3N156A
2N6127
POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER POWER
3N157 3N157A
4-456
3N158 3N158A 3N160 3N161 3N163 3N164
4-456
2N5882 2NS883 2N5884 2N5885 2N5886 2N5938
2NS939 2N5940 2NS949 2N5950
2N6128 2N6270 2N6271
2N6272 2N6273 2N6322
2N6323 2N6324 2N6325
2N6326 2N6327 2N6328 2N6329 2N6330 2N6331 2N6332 2N6333 2N6334 2N6335 2N6336 2N6337 2N6449 2N6450
SEC-PAGE
POWER POWER POWER POWER POWER POWER POWER POWER POWER
4-429
4-437 4-437
2N64S1
4-441
2N6452
4441
2N6453 2N6454
4-441
2N6461
4-443
2N6462 2N6463 2N6464 3N34
4443
4-441
4-443 4-443 4-445
POWER— Refer to The Power Semiconductor
0-8
SEC-PAGE
TYPE NO. 3N35 3N74 3N75 3N76 3N77 3N78 3N79 3N108 3N109 3N110
TYPE NO. 2N5881
4-446 4-447 4-447
4-447 4-447 4-447 4-447
4-450 4-450 4-450
4-454 4-456 4-456
4-456
4-456
4456 4-460
4462 4-464
4464 4467 4467
3N169 3N170 3N171 3N174 3N201 3N202 3N203 3M204 3N205 3N206 3N207 3N208 3N211 3N212 3N213 3N214 3N215 3N216 3N217 A5T404 A5T404A A5T2192 A5T2193 A5T2222 A5T2243
4-467
4469 4471 4471 4471
4476 4476 4476 4484 4486 4488 4488 4488 3495 4496 4495 4495 4-17
.... .... .... .... ....
4-17 4-91 4-91
4-101
4-110
Deta Book for Design Engineers, First Edition (CC404).
Instruments Texas INCORPORATED POST OFFICE BOX SO 12
•
DALLAS, TEXAS 75222
SEC-PAGE
TYPE NO. A5T2604 A5T2605 A5T2907 A5T3391 A5T3391A A5T3392 A5T3496 A5T3497 A5T3504 A5T3505 A5T3565 A5T3571 A5T3572 A5T3638 A5T3638A A5T3644 A5T3645 A5T3707 A5T3708 A5T3709 A5T3710 A5T3711 A5T3821 A5T3822 A5T3823 A5T3824 A5T3903 A5T3904 A5T3905 A5T3906 A5T4026 A5T4027 A5T4028 A5T4029 A5T4058 A5T4059 A5T4060 A5T4061 A5T4062 A5T4123 A5T4124 A5T4125 A5T4126 A5T4248 A5T4249 A5T4250 A5T4260 A5T4261 A5T4402 A5T4403
.
.
.
.
4-140
.
.
.
.
4-140
.
.
.
.
4-160
.
.
.
.
4-206
.
.
.
.
4-206
.
.
.
.
4-206
.
.
.
.
4-220
.
.
.
.
4-220
.
.
.
.
4-226
.
.
.
.
4-226
.
.
.
.
4-231
.
.
.
.
4-235
.
.
.
.
4-235
.
.
.
.
4-242
.
.
.
.
4-242
.
.
.
.
4-245
.
.
.
.
4-245
.
.
.
.
4-254
.
.
.
.
4-254
.
.
.
.
4-254
.
.
.
.
4-254
.
.
.
4-254
.
.
.
.
4-275
.
.
.
.
4-275
.
.
.
.
4-275
.
.
.
.
4-275
.
.
.
.
4-283
.
.
.
.
4-283
.
.
.
.
4-286
.
.
.
.
4-286
.
.
.
.
4-308
.
.
.
.
4-308
.
.
.
.
4-308
.
.
.
.
4-308
.
.
.
.
4-311
.
.
.
.
4-311
.
.
.
.
4-311
.
.
.
.
4-311
.
.
.
.
4-311
.
.
.
.
4-318
.
.
.
.
4-318
.
.
.
.
4-321
.
.
.
.
4-321
.
.
.
.
4-330
.
.
.
.
4-330
.
.
.
.
4-330
.
.
.
.
4-335
.
.
.
.
4-335
.
.
.
.
4-340
.
.
.
.
4-340
TYPE
TYPE NO. A5T4409 AST4410 A5T5058 AST5059 A5T5086 AST5087 A5T5172 A5T5209 A5T5210 A5T5219 A5T5220 A5T5221 AST5223 A5T522S A5T5226 A5T5227 ASTS400 A5T5401 AST5460 A5T5461 AST5462
AST5550 AST5551 A5T6116 A5T6117 A5T6118 A5T6449 AST64S0 A6T5222 A7T3391 A7T3391A A7T3392 A7TS172 A7T6027 A7T6028 A8T404 A8T404A A8T3391 A8T3391A A8T3392 A8T3702 A8T3703 A8T3704 A8T3705 A8T3706 A8T3707 A8T3708 A8T3709 A8T3710 A8T3711
.
SEC-PAGE .
.
.
4-343
.
.
.
4-343
.
.
.
4-369
.
.
.
4-369
.
.
.
4-371
.
.
.
4-371
.
.
.
4-373
.
.
.
4-37S
.
.
.
4-375
.
.
.
4-377
.
.
.
4-379
.
.
.
4-381
.
.
.
4-385
.
.
.
4-387
.
.
.
4-389
.
.
.
4-391
.
.
.
4-414
.
.
.
4-414
.
.
.
4-420
.
.
.
4-420
.
.
.
4-420
TYPE NO. A8T4026 A8T4027 A8T4028 A8T4029 A8T4058 A8T4059 A8T4060 A8T4061 A8T4062 A8T5172 D2T918 D2T2218 D2T2218A D2T2219 D2T2219A D2T2904 D2T2904A D2T2905 D2T2905A G129 G130
SEC-PAGE
TI480
*
.
4-308
TI481
'
.
4-308
TI482
*
.
4-308
TI483
*
.
4-311
TI484
*
.
4-311
TI486
.
4-311
TI487
POWER POWER
.
4-311
TI492
*
.
4-311
TI493
*
4-373
TI494
*
.
4-50
TI495
*
.
4-97
TI496
*
.
.
4-97
TI550
10-71
.
4-97
TI551
10-71
.
4-97
TI1131-1136
.
4-154
.
4-154
.
4-154
.
4-154
TID19
10-72
H62
.
LS400
.
.
.
.
4-383
LS600
.
.
.
4-435
.
.
4-435
H61
.
10-72
4-439
.
.
.
10-72
4-439
4-435
POWER POWER
.
TID17
.
.
....
TID18
.
.
SERIES TIC SERIES
10-64
.
.
H35 H38 H60
POWER
10-66
.
H11
4-427
....
.
.
4-427
.
SERIES TI1151-1156
.
.
.
.
SEC-PAGE
4-308
OPTO OPTO OPTO OPTO OPTO OPTO OPTO OPTO
.
.
TYPE NO.
.
.
.
NUMBER INDEX
.
.
.
.
TID20
10-72
TID21A TID22A
10-76
10-76
10-76
.
4-103
.
4-157
TID23A TID24A TID25A TID26A TID29A TID30A
.
4-197
TID31
.
4-260
TID32
10*2 10*2
.
11-1
TID33
10-82
.
10-68
.
10*8
10-82
10-68
TID34 TID35 TID36
10-68
TID37
.
.
.
.
4-206
.
.
.
4-206
.
.
.
4-206
.
.
.
4-373
.
.
.
4-431
Q2T2222 Q2T2905 Q2T3244 Q2T3725 TGI/8
.
.
.
4-431
TI51
.
.
.
4-17
TI52
.
.
.
4-17
TI53
.
.
.
.
4-206
TI54
.
10-76 10-76
10-76
10-76 10-76
10-83
10*2 10*2 10*3
.
.
.
4-206
TI55
.
10-68
TID38
.
.
.
4-206
TI56
.
10-68
TID39
10-83
.
.
.
4-250
TI57
.
10-68
TID40
10*5 10*5 10*5 10*5 10*5 10*6
.
.
.
4-250
TI58
.
10-68
TID41
.
.
.
4-252
TI59
.
10-68
TID42 TID43
TID45 TID121
.
.
.
4-252
TI60
.
.
.
.
4-252
TI71
.
.
.
.
4-254
TI72
.
.
.
.
4-254
TI73
.
10*8 10*9 10*9 10*9
.
.
.
4-254
TI74
.
10-69
TID122
10-76
.
.
.
4-254
TI75
.
10-69
TID123 TID124
10-76
4-254 TI145A SERIES POWER *Not shown in this data book but still available from Texas Instruments. OPTO— Refer to The Optoelectronics Data Book for Design Engineers, F irst Edition (CC-405). POWER— Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404). .
.
.
.
Texas INCORPORATED Instruments post oFFice aox soi2
DALLAS. TEXAS 75222
TID44
.....
10-76
10-76
0-9
TYPE
NUMBER INDEX
TYPE NO
SEC-PAGE
TIS137
4-548
TIS25
4-497
TIS138
4-548
10-76
TIS26
4-497
TIV21
10-105
.
10-76
TIS27
4-497
TIV22
10-105
.
.
10-76
TIS37
4-499
TIV23 TIV24 TIV2S
10-105
10-109
.
10-76
TIP SERIES
TID126
.
.
10-76
.
.
.
TID131
TID132 TID133 TID134 TID135N TID136N TID139F
TID139N TID140F TID140N TID141F TID141N TID142F TID142N TID143F TID143N TID144F TID144N
.
.
.
.
.
10-76
TIS38
4-499
.
.
10-76
TIS43
4-501
.
.
10-76
TIS58
4-503
.
.
10-90
TIS59
4-503
.
.
10-90
TIS62A
4-505
.
.
10-90
TIS63A
4-505
TIV306 TIV307 TIV308 TIXL SERIES
.
.
10-90
TIS64A
4-505
TM1/8
.
.
10-90
TIS69
4-507
.
.
10-90
TIS70
4-507
.
.
10-90
TIS73
4-509
.
.
10-90
TIS74
4-509
.
.
10-90
TIS75
4-509
.
.
10-90
TIS84
4-511
.
.
10-90
TIS86
4-514
.
.
10-90
TIS87
4-514
.
.
10-90
TIS90
4-516
.
.
10-90
TIS90M
4-516
TID381
.
.
10-96
TIS91
4-516
TID382
.
.
10-96
TIS91M
4-516
TID383
.
.
10-96
TIS92
4-516
TID384
.
.
10-96
TIS92M
4-516
.
.
10-96
TIS93
4-516
TID385 TID777 TID778
TIDM155F TIDM155J TIDM166F TIDM166J TI0M168F TIDM168J TIDM185F TIOM185J TIDM186F TIDM186J TIDM255F TIDM2S5J TIDM266F TIDM266J TIDM268F TIDM268J TIDM285F TIDM285J TIDM286F TIDM286J TILSERI1ES
.
.
10-98
TIS93M
4-516
.
.
10-98
TIS94
4-518
.
.
10-100
TIS95
4-518
.
.
10-100
TIS96
4-518
.
.
10-100
TIS97
4-518
.
.
10-100
TIS98
4-518
.
.
10-100
TIS99
4-518
.
.
10-100
TIS100
4-520
.
.
10-100
TIS101
4-520
.
.
10-100
TIS105
4-522
.
.
10-100
TIS108
4-525
.
.
10-100
TIS109
4-528
.
.
10-100
TIS110
4-528
.
.
10-100
TIS111
4-528
.
.
10-100
TIS112
4-533
.
.
10-100
TIS125
4-536
.
.
10-100
TIS126
4-538
.
.
10-100
TIS128
4-541
.
.
10-100
TIS129
4-543
.
.
10-100
TIS133
4-545
.
.
10-100
TIS134
4-545
.
.
10-100
TIS135
4-545
.
.
OPTO
TIS136
4-545
to Tha Optoelectronics Data Book for Design Engineers, First Edition (CC-405). POWER— Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404).
OPTO-Refer
0-10
SEC-PAGE
TYPE NO.
POWER
.
TID129 TID130
SEC-PAGE
TYPE NO.
TID125
Instruments Texas INCORPORATED POST OFFICe BOX 5012
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10-107 10-107
10-109 10-109 .
.
OPTO 11-1
Glossary
INDEX Page General
Letter Symbols, Terms, Signal Diodes
and
"
1
Terms and Definitions
1
1-3
and Definitions
Rectifiers
Letter Symbols, Terms,
"
1
Terms and Definitions
7
I' 7
and Definitions
Voltage-Regulator and Voltage-Reference Diodes
Terms and Definitions
1_12
Letter Symbols, Terms, and Definitions
1-12
Voltage-Variable-Capacitance Diodes
Letter Symbols, Terms,
"
1
Terms and Definitions and Definitions
14
1-14
Multifunction Transistors
Terms and Definitions
1-1
5
Letter Symbols, Terms, and Definitions
1-1
7
Unijunction Transistors 1 '
Terms and Definitions Letter Symbols, Terms,
and Definitions
27
1"27
Field-Effect Transistors
Terms and Definitions Letter Symbols, Terms, and Definitions
Standards Documents
'
1
29
1-31 ''•*'
GLOSSARY GENERAL GLOSSARY Introduction This glossary contains letter symbols, abbreviations, terms, and definitions commonly used with semiconductor devices. Most of the information was obtained from JEDEC Publication No. 77. That document has over-riding authority where
any conflict may occur.
GENERAL Terms and Definitions Term anode
Definition
The electrode from which the forward current flows within the device.
anode bipolar transistor
breakdown
^j
> forward current
cathode
A transistor that utilizes charge carriers of both A phenomenon
occuring
a
in
junction, the initiation of which
is
polarities.
reverse-biased
semiconductor
observed as a transition from a
region of high small-signal resistance to a region of substantially
lower
small-signal
resistance
for
an
increasing
magnitude of
reverse current.
breakdown region
A region of the volt-ampere characteristic beyond the initiation of breakdown for an increasing magnitude of reverse current.
breakdown voltage
The
voltage measured
region. (Ref
blocking
A
state of a
at
MIL-S-19500D
a
specified current in a
breakdown
Par. 20.3)
semiconductor device or junction which essentially
prevents the flow of current.
cathode
The electrode to which the forward current flows within the device.
electrode
forward bias
For diagram, see "anode".
An electrical and mechanical contact to a region of a semiconductor device. The
bias
which tends to produce current flow
in
the forward
direction.
l> current flow
"-^T forward direction
The
direction of current flow which results
semiconductor region
is
when the
at a positive potential
p-type
relative to the
n-type region. (Ref IEEE 253) open-circuit
A
rectifying junction
A
circuit in which halving the magnitude of the terminating impedance does not produce a change in the parameter being measured greater than the required accuracy of the measurement. (Ref MIL-S-19500D Par. 20.8)
junction
in
a
semiconductor device which exhibits asym-
metrical conductance.
Texas INCORPORATED Instruments POST OFFICE BOX 50X2
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1-1
GLOSSARY GENERAL Definition
Term The
reverse bias
which tends to produce current flow
bias
—
direction.
+
~^MThe
reverse direction
current flow
direction of current flow which results
semiconductor region
is
the reverse
in
when
at a positive potential
the n-type
relative to the
p-type region.
semiconductor device
A
whose
device
essential characteristics are
governed by the flow
of charge carriers within a semiconductor.
semiconductor diode
A
semiconductor device having two terminals and exhibiting a
nonlinear voltage-current characteristic; in more restricted usage, voltagea semiconductor device which has the asymmetrical
exemplified
characteristic
current
by
a
single
p-n
junction.
(Ref IEEE 270)
semiconductor junction
A region of transition
(commonly
electrical
referred to
properties
between semiconductor regions of different (e.g.,
n-n+, p-n, p-p+ semiconductors), or
as junction)
between a metal and a semiconductor.
short-circuit
A
small-signal
A
circuit in which doubling the magnitude of the terminating impedance does not produce a change in the parameter being measured that is greater than the required accuracy of the measurement. (Ref MIL-S-19500D Par. 20.16)
which when doubled in magnitude does not produce a the parameter being measured that is greater than the required accuracy of the measurement. (Ref MIL-S-19500D signal
change
in
Par. 20.17)
non-varying value or quantity measured at a specified fixed point, or the slope of the line from the origin to the operating point on the appropriate characteristic curve. (Ref
A
static value
IEEE 255
An
terminal
Par. 2.2.1)
externally available point of connection to
one or more
electrodes.
thermal resistance (steady-state)
transient thermal
impedance
The temperature difference between two specified points regions divided by the power dissipation under conditions thermal equilibrium. (Ref IEEE 223) The change of temperature
difference between
two
or of
specified
points or regions at the end of a time interval divided by the stepfunction change in power dissipation at the beginning of the same
time interval causing the change of temperature difference. (Ref
IEEE 223) transistor
An
active
semiconductor device capable of providing power
amplification and having three or
147-0 Par. 0-2.8)
1-2
Instruments Texas INCORPORATED POST OFFICE BOX 5012
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more
terminals.
(Ref IEC
GLOSSARY GENERAL Letter Symbols, Terms,
and Definitions
Symbol F or
NF*
Term
Definition
average noise figure*
The
ratio of
(
1
)
the total output noise power within a
designated output frequency band average noise factor*
when
temperature of the input termination(s)
the noise is
at the
reference noise temperature. To, at all frequencies to (2) that part of (1) caused by the noise temperature
of the designated signal-input termination within a designated signal-input frequency band.
ForNF*
spot noise figure*
The
or
ratio of (1) the total
bandwidth
output noise power per unit
(spectral density) at a designated
output frequency when the noise temperature of the input termination(s) is at the reference noise temperature.
spot noise factor*
To. at all frequencies to (2) that part of (1 ) caused by the noise temperature of the designated signal-input termination at a designated signal-input frequency.
forward current, dc
•F
The dc current junction
noise current,
in
that flows through a semiconductor
the forward direction.
The noise current of an ideal current source (having a source impedance equal to infinity) in parallel with the input terminals of the device that, together with
equivalent input
the equivalent input noise voltage, represents the noise of the device. reverse current,
dc
The dc current
that flows through a semiconductor
junction in the reverse direction. Rfl
(formerly 6)
R0CA
thermal resistance
Refer to thermal resistance (steady-state), page 1-2.
thermal resistance,
The thermal
case-to-ambient
case to the ambient.
resistance (steady-state)
from the device
RflJA (formerly 0j_a)
thermal resistance,
The
junction-to-ambient
semiconductor junction
RflJC (formerly 0j-c)
thermal resistance,
The
junction-to-case
semiconductor junction (s) to a stated location on the
thermal
thermal
resistance
(steady-state)
(s)
resistance
from
the
from
the
to the ambient.
(steady-state)
case.
Sf
or S21
forward transmission
The
coefficient
voltage incident
port
ratio of the voltage at the
terminated
output port to the
on the input port with the output in
a
purely
resistive
reference
impedance equal to the impedance of the source of the incident voltage.
•NF and NF abbreviations are often used for symbols F and F; however, the symbols F and F are preferred. TThese quantities may be expressed logarithmically in decibels (dB).
Texas INCORPORATED Instruments POST OFFICE BOX S012
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1-3
GLOSSARY GENERAL
sj
or si
1
Definition
Term
Symbol
from the input port
input reflection
The
coefficient
to the voltage incident on the input port with the output port terminated in a purely resistive reference
ratio of the voltage reflected
impedance equal to the impedance of the source of the incident voltage.
Soors22
ratio of the voltage reflected from the output port to the voltage incident on the output port with the input port terminated in a purely resistive
The
output reflection coefficient
reference impedance equal to the impedance of the
source of the incident voltage.
sr
orsi2
ratio of the voltage at the input port to the
reverse transmission
The
coefficient
voltage incident
port
on the output port with the input
terminated
a
in
purely
resistive
reference
impedance equal to the impedance of the source of the incident voltage.
TA
free-air
air temperature measured below a device, in an environment of substantially uniform temperature, cooled only by natural air convection and not materially affected by reflective and radiant surfaces.
The
temperature or
ambient temperature
(Ref MIL-S-19500D Par. 20.20.1)
TC
The temperature measured
case temperature
the
of
case
at a specified location
device.
a
(Ref
on
MIL-S-19500D
Par. 20.20.2)
temperature representing the temperature of the on the basis of a simplified model of the thermal and electrical behavior of the
virtual junction
A
temperature
junction(s) calculated
semiconductor device.
NOTE:
This term "virtual junction temperature"
taken from
I
EC
standards.
It is
is
particularly applicable
to multijunction semiconductors and
is
used
in this
publication to denote the temperature of the active in required when element semiconductor specifications and test methods.
junction temperature"
is
The term
"virtual
used interchangeably with
the term "junction temperature" in this publication.
'stg
The temperature power applied,
storage temperature
Par. 20.20.3)
14
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at is
which the device, without any (Ref MIL-S-19500D stored.
GLOSSARY GENERAL Symbol
Term
Definition
noise temperature
The uniform
physical absolute temperature (kelvin)
which a network (and all its sources, if a multiport) would have to be maintained if it (and its sources) were passive in order to make available (or deliver) the same random noise power per unit bandwidth at
(spectral density) at a given frequency as
available (or delivered)
TO
is
actually
from the network.
A specified absolute temperature (kelvin) to be assumed as a noise temperature at the input ports of a network when calculating certain noise parameters, and for normalizing purposes. When the reference
reference noise temperature
noise temperature
is 290 K, it is considered to be the standard reference noise temperature.
delay time
The time interval from the point at which the leading edge of the input pulse has reached 10 percent of its maximum amplitude to the point at which the leading edge of the output pulse has reached 10 percent of its maximum amplitude. (Ref MIL-S-19500O
fall
time
Par. 20.11)
The time duration during which the trailing edge of a pulse is decreasing from 90 to 10 percent of its
maximum
amplitude.
(Ref
MIL-S-19500D
Par. 20.12)
toff
turn-off time
The sum of
ts
+
tf.
ton
tum-on time
The sum of
td +
tf.
tp
pulse time
The time duration from the point on the leading edge which is 90 percent of the maximum amplitude to the point on the trailing edge which is 90 percent of
maximum
the
amplitude.
(Ref
MIL-S-19500D
Par. 20.15)
rise
time
The time duration during which the leading edge of a is increasing from 10 to 90 percent of its
pulse
maximum storage time
amplitude. (Ref MIL-S-19500 Par. 20.13)
The time
interval from a point 90 percent of the amplitude on the trailing edge of the input pulse to a point 90 percent of the maximum amplitude on the trailing edge of the output pulse.
maximum
(Ref
MIL S 19500D
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1-5
GLOSSARY GENERAL Symbol
Definition
Term pulse average time
The time duration from the point on the leading edge which is 50 percent of the maximum amplitude to a point on the trailing edge which is 50 percent of the MIL-S-19500D (Ref amplitude. maximum Par. 20.10)
•
.
90%
..OUTPUT PULSE
DIAGRAM ILLUSTRATING PULSE TIME SYMBOLOGY
VF
forward voltage, dc
The dc
voltage
across
a semiconductor junction
associated with the flow of forward current.
noise voltage of an ideal voltage source (having a source impedance equal to zero) in series with the input terminals of the device that, together with the equivalent input noise current, represents the noise of
The
noise voltage,
equivalent input
the device.
VR
reverse voltage,
dc
voltage applied to a semiconductor junction which causes the current to flow in the reverse
The dc
direction.
1-6
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GLOSSARY SIGNAL DIODES AND RECTIFIERS SIGNAL DIODES AND RECTIFIERS Terms and Definitions Term semiconductor
rectifier
Definition
A
semiconductor diode having an asymmetrical voltage-current characteristic, used for rectification, and including its associated
diode
housing, mounting, and cooling attachments
Graphic symbol
semiconductor
for
a semiconductor
diode (Ref
signal
Anode semiconductor
signal
A
diode
if
integral
rectifier
with
it.
diode and a
ANS
Y32.2): -envelope optional
H
^W^Catho. 1 Cathode 1
semiconductor diode having an asymmetrical voltage-current and used for signal detection.
characteristic
For graphic symbol, see above.
Letter Symbols, Terms, and Definitions
(For illustration of the following currents refer to diagrams on page 1-10) Symbol 'F(RMS).
If,
•F.
'F(AV).
•F.
IFM
Term
Definition
forward current
The
page 1-11)
(see table,
respective value of current that flows through a
semiconductor diode or
rectifier
diode
in
the forward
direction.
'FRM
forward current,
"fsm
The peak
peak
repetitive
value of the forward current including
all
repetitive transient currents.
forward current,
The maximum
surge peak
specified
(peak) surge forward current having a
waveform and
a short specified time inter-
val.
'0
average rectified
The value of the forward current averaged over a full cycle of half-sine-wave operation at 60 Hz with a
forward current
conduction angle of 180°.
IR(RMS).
Ir.
'R. lR(AV). 'R.
The
reverse current
page 1-11)
(see table,
respective value of current that flows through a
semiconductor diode or
IRM
•R(REC).
reverse recovery
The
'RM(REC)
current
associated with a change
page 1-11)
(see table,
'rrm
diode
in
the reverse
transient
component
of
reverse
current
from forward conduction to
reverse voltage.
The maximum
reverse current, repetitive
Irsm
rectifier
direction.
peak
(peak) repetitive instantaneous reverse
current.
reverse current,
The maximum
surge peak
specified
(peak) surge reverse current having a
waveform and a short specified time
inter-
val.
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1-7
GLOSSARY SIGNAL DIODES AND RECTIFIERS
PF. PF(AV).
PF.
PFM
forward power
The power
dissipation
respective forward current.
(see table,
PR.PRlAV). PR.
Qs
PRM
Definition
Term
Symbol
reverse
from the flow of the
page 1-11)
power
(see table,
dissipation resulting
The power
dissipation
from the flow of the
dissipation resulting
respective reverse current.
page 1-11)
The
stored charge
total
amount of charge recovered from
a diode
minus the capacitive component of that charge when the diode is switched from a specified conductive condition to a specified
non-conductive condition
with other circuit conditions
JEDEC
Standard
Suggested
recover the largest possible
Re
thermal resistance
Seepages 1-2 and
Tj
junction temperature
Seepage
tfr
forward recovery time
The time required recover
(as
No.
described 1)
amount of
in
EIA-
optimized to charge.
1-3.
1-4.
to
a
for
specified
the current or voltage to value
after
instantaneous
switching from a stated reverse voltage condition to a stated forward current or voltage condition in a given circuit.
SPECIFIED '
L ~ RECOVERY^
RECOVERY VOLTAGE
TIME-
TIME
pulse time
time
tr
rise
trr
reverse recovery time
See pages 1-5 and
1-6.
See pages 1-5 and
1-6.
The time recover
to
required for the current or voltage to a specified value after instantaneous
switching from a stated forward current condition to a given a stated reverse voltage or current condition in circuit.
1-8
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GLOSSARY SIGNAL DIODES AND RECTIFIERS Symbol t
Term
w
Definition
pulse average time
Seepage
V(BR).
breakdown voltage
V(BR)
instantaneous total value)
VF(RMS), Vf, V F. Vp(AV).
(see table,
VF,
The value of voltage
(dc,
forward voltage
at
which breakdown occurs.
The
resulting
The
voltage applied to a semiconductor diode which
voltage drop in a semiconductor diode from the respective forward current.
page 1-11)
VFM
VR(RMS). V r VR, Vr( AV ), VR,
1-6.
,
reverse voltage (see table,
page 1-11)
causes the respective current to flow in the reverse
Vrm
Vrwm
direction.
working peak
The maximum instantaneous
reverse voltage
voltage, excluding
all
value of the reverse
transient voltages,
which occurs
across a semiconductor rectifier diode.
Vrrm
repetitive
The maximum instantaneous
peak
reverse voltage
voltage, including
excluding
all
all
value of the reverse
repetitive transient voltages but
nonrepetitive transient voltages, which
occurs across a semiconductor rectifier diode.
V RSM
nonrepetitive
The maximum instantaneous value of the
peak reverse
voltage including
all
but excluding
repetitive transient voltages,
voltage
all
reverse
nonrepetitive transient voltages
which
occurs across a semiconductor rectifier diode.
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1-9
GLOSSARY SIGNAL DIODES AND RECTIFIERS DIAGRAMS ILLUSTRATING SYMBOLS FOR DIODE CURRENTS AND VOLTAGES I.
FORWARD CURRENT AND VOLTAGE: Maximum
Maximum
(peak) repetitive value
Tl
7/
T
(peak) surge value
fsm
Ifrm
.L
'F
/-iAverage value, 180° conduction angle,
Instantaneous total value
Maximum
60 Hz,
(peak) total value
TV _
half sine
wave
Vf(AV). -
VFM
Average value with alternating
J
on IFRM—
component
— Maximum
(peak)
repetitive value
Average value with alternating
A II.
component
'FM"
Maximum
(peak)
total value
.
REVERSE CURRENT AND VOLTAGE:
t,
_4 Irrm^.
,R
Average value with -^"alternating component
^
J
_4
Maximum
T/ VrsM
__1 Maximum
1-10
(peak) total value
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(peak)
surge value
GLOSSARY SIGNAL DIODES AMD RECTIFIERS
TABLE OF SYMBOLS FOR CURRENT, POWER, AND VOLTAGE Total
RMS Value
Forward Current
RMS Value
DC Value,
of
No
DC
Value,
With
Alternating
Alternating
Alternating
Component
Component
Component
'FIRMS)
If
'F
-
-
_
'F(AV)
Instantaneous Total
Value
Maximum (Peak)
Total
Value 'F
Ifm
Forward Current, Average, 180° Conduction Angle,
'o
_
~
—
—
~
—
—
'R
IRM
'R(REC)
IRM(REC)
60-Hz, Half Sine
Wave Forward Current, Repetitive Peak Forward Current, Surge Peak Reverse Current
frm (fsm
'R(RMS)
Ir
IR
'R(AV)
-
-
-
-
-
-
PF
PF(AV)
PF
PFM
-
-
PR
PR(AV)
PR
prm
Forward Voltage
V F(RMS)
Vf
vf
VF(AV)
VF
v Fm
Reverse Voltage
V R
reverse current
ANS
Y32.2)
^"-^.
Cathode
/ M ^
J
Anode
*^^ envelope optional and Definitions of the following currents and
Letter Symbols, Terms,
(For
illustration
Symbol
voltages refer to diagrams
Definition
Term
The value of dc current
forward current, dc
IF
in
reverse current,
IR
on page 1-13)
The value of dc current
dc
that flows through the diode
the forward direction. that flows through the diode
in the reverse direction.
_ I
'
ZK •ZM ,
dc near breakdown knee,
The value of dc reverse current that flows through the diode when it is biased to operate in its breakdown region and at a point on its voltage-current character-
dc maximum-rated current)
istic
as follows:
\Z-
a
regulator current.
reference current (dc,
specified
operating point between
lz« and
IZM IZK a 'ZM a :
:
specified point based
power. See page
junction temperature
112 I*
1-4.
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GLOSSARY VOLTAGE-REGULATOR AND VOLTAGE-REFERENCE DIODES Symbol
VF
Term forward voltage, dc
Definition
The voltage drop
in
the diode, resulting from the dc
forward current.
Vr
reverse voltage,
dc
The voltage applied to the diode which causes the dc current to flow
V2M
in
the reverse direction.
regulator voltage,
The
reference voltage
biased to operate in
its
specified point in
voltage-current characteristic as
(dc,
dc at maximum-
rated current)
value of dc voltage across the diode
its
when
breakdown region and
it is
at a
follows:
V Z at 'Z (see previous page) VZM at Izm (see previous page) :
:
z z.
regulator impedance,
The
zzk.
reference impedance,
biased to operate in
(small-signal, at lz,
specified point in
z zm
at
l
Z K.
at
l
ZM
)
small-signal
impedance of the diode when its breakdown region and its
it
is
at a
voltage-current characteristic as
follows: z z at lz (see previous page) z zk at Izk (see previous page) :
:
z zm
:
at
'ZM
(see previous page)
BREAKDOWN KNEE
DIAGRAM ILLUSTRATING SYMBOLS FOR CURRENTS AND VOLTAGES
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1-13
.
GLOSSARY VOLTAGE-VARIABLE-CAPACITANCE DIODES VOLTAGE-VARIABLE-CAPACITANCE DIODES Terms and Definitions Definition
Term voltage-variable-
A
capacitance diode
property that
two-terminal semiconductor device its
in
which use
is
made of the
capacitance varies with the applied voltage,
(varactor diode)
voltage-variable-capacitance diode used for rf tuning. This includes functions such as automatic frequency control (AFC)
A
tuning diode
and automatic
Letter Symbols, Terms,
and Definitions Definition
Term
Symbol
N-P-N,
TRIODE Collector
-(C) >«^ ,r
Emitter
DOUBLE-BASE
Emitter
P-N-P
DOUBLE-EMITTER
Collector
©.
Base
Emitter
^_^ Ba
«
Co(|ector
/
Emitter^—^Emitter or— Collector
Emitter Emitter •References to bate, collector and emitter symbolism
breakdown
The breakdown
voltage,
between
double-emitter
a
the
emitter
transistor,
with
between collector and base.
voltage between the emitter and base
when the
emitter terminal
is
biased in the
emitter-to-base,
terminals
collector open
reverse direction with respect to the base terminal
and the collector terminal
is
open-circuited.
(Ref
IEEE 255)
V(BR)ECO (formerly BVeCQ)
breakdown
The breakdown
voltage,
voltage between the emitter and
terminals
when
the
emitter terminal
is
em itter-to-col lector,
collector
base open
biased in the reverse direction* with respect to the collector terminal and the base terminal is opencircuited.
*For
parameter
this
the
considered to be biased
when
it
is
made
in
emitter
terminal
is
the reverse direction
positive for N-P-N transistors or
negative for P-N-P transistors with respect to the collector terminal.
(floating potential)
dc open-circuit voltage (floating potential) between the terminal indicated by the first subscript
VEB(fl).
(collector-to-base.
and
VEC(fl)
col lector-to-emitter.
terminal
emitter-to-base.
to the reference terminal. (Ref IEEE 255)
v CB(fDVCE(fl).
The
dc open-circuit voltage
reference
the is
emitter-to-collector)
1-24
Instruments Texas INCORPORATED POST OFFICE BOX 5012
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terminal
when the remaining
biased in the reverse direction with respect
GLOSSARY MULTUUNCTION TRANSISTORS Symbol
Vcbo
VcE(ofs)
Term
Definition
voltage, dc, emitter
The dc voltage between the collector terminal and the base terminal when the emitter terminal is open-
open
circuited.
collector-to-base
collector-emitter
The open-circuit voltage between the
offset voltage
emitter terminals
when
collector and
the base-emitter diode
is
forward-biased.
VcE(sat)
saturation voltage,
The dc
collector-to-emitter
terminals for specified
voltage between the collector and the emitter saturation conditions. (Ref
IEEE 255)
VCEO.
collector-to-emitter voltage, dc, with
\
(base open,
VCER.
resistance
between
base and emitter,
The dc voltage between the emitter
terminal
indicated
by the
collector terminal
when the
last
base
and the
terminal
is
(as
subscript letter as follows):
= open circuited. R - returned to the emitter terminal through
a
specified resistance.
S = short-circuited to the emitter terminal.
VCES.
base short-circuited
V=
to emitter,
X= VCEV.
returned
to
the
emitter
terminal
through a
emitter
terminal
through a
specified voltage.
voltage between base
returned
to
the
specified circuit.
and emitter,
VCEX
circuit
between base
and emitter)
VEBO
emitter-to-base
The dc
voltage, dc,
base
collector
VEC(ofs)
open
voltage between the emitter terminal and the
terminal
with
the collector terminal
open-
circuited.
emitter-collector
The
offset voltage
collector
open-circuit voltage between the emitter and
when
the base-collector diode
is
forward-
biased.
|VE1E2(ofs)|
magnitude of the
The
emitter-emitter offset
between
voltage
transistor
absolute
value
of
the
open-circuit
voltage
two emitters of a double-emitter when the base-collector diode is forward-
the
biased.
|AVE1E2(ofs)lAI B
I^VE1E2(ofs)lAT A
magnitude of the change in offset
absolute
value
of
the
algebraic
difference
voltage with base
between the emitter-emitter offset voltages of a double-emitter transistor at two specified base
current
currents.
magnitude of the
The
change
between the emitter-emitter offset voltages of a
in offset
voltage with
Vn
The
absolute
value
of
the
algebraic
difference
temperature
double-emitter transistor at two specified ambient temperatures.
noise voltage,
Seepage
1-6.
equivalent input
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GLOSSARY MULTUUNCTION TRANSISTORS
reach-through (punch-through)
VRT
Definition
Term
Symbol voltage
That value of reverse collector-to-base voltage at which the space-charge region of the collector-base junction extends to the space-charge region of the emitter-base junction. (Ref
small-signal short-
Vfb.
circuit forward-
Vfe
IEEE 255)
ratio of rms output current to rms input voltage with the output short-circuited to ac.
The
transfer admittance
(common-base, common-emitter) small-signal short-
Vib.
circuit input
Vie
admittance
The
rms input current to rms input voltage
ratio of
with the output short-circuited to
ac.
(common-base, common-emitter)
Vie(imag) or Im(vje)
the small-signal
ratio of rms input current to the rms out-ofphase (imaginary) component of the input voltage
short-circuit input
with the output short-circuited to ac.
imaginary part of
The
admittance
(common-emitter)
Vie(real)
or Re(yje)
real part
of the
small-signal shortcircuit input
admittance
The
rms input current to the rms in-phase component of the input voltage with the
ratio of
(real)
output short-circuited to
ac.
(common-emitter)
Vob.
small-signal short-
Voe
circuit
output
The
ratio of
rms output current to rms output voltage
with the input short-circuited to
ac.
admittance
(common-base,
common-emitter)
Voe(imag) or
Im(yoe)
imaginary part of
The
the small-signal
(imaginary)
short-circuit
ratio of
rms output current to the out-of-phase
component of the rms output
with the input short-circuited to
output
voltage
ac.
admittance
(common-emitter)
Yoe(real)
or
Re(yoe)
real part
The ratio of rms output current to the in-phase (real) component of the rms output voltage with the input
of the
small-signal shortcircuit
short-circuited to ac.
output
admittance
(common-emitter)
Vrb-
small-signal short-
Yre
circuit reverse
ratio of rms input current to rms output voltage with the input short-circuited to ac.
The .
transfer admittance
(common-base, common-emitter)
1-26
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GLOSSARY UNIJUNCTION TRANSISTORS UNIJUNCTION TRANSISTORS Terms and Definitions Term 11356
'
B
Definition
A
region of a semiconductor device into which minority carriers are injected.
'
A region from which charge carriers that are minority carriers in the base are injected into the base. (Ref. 60 IRE 28.S1
emitter (E)*
junction, emitter
A
semiconductor
direction
to
junction
inject
normally
biased
forward
the
in
minority carriers into the base.
(Ref 60
IRE28.S1) peak point
The point on the
emitter current-voltage characteristic cor-
responding to the lowest current at which dVEBl/dlE = 0.
programmable unijunction
transistor
See page 1-16.
valley point
The point on the emitter
current-voltage characteristic corres-
ponding to the second lowest current at which dVEBl/dlE =
A
unijunction transistor
0.
three-terminal semiconductor device having one junction and a
stable negative-resistance characteristic over a
wide temperature
range.
Graphic symbols for unijunction transistors (Ref. AIMS Y32.2):
N-P (P-Type Base)
^ 2/P\ *
base 2
baSe1
baselU^
p-N (N-Type Base)
!
\L>'
NOTE:
In the graphic
optional
is
if
{T^««*
J
symbols, the envelope
no element
is
connected
to the envelope.
Letter Symbols, Terms,
and Definitions
Symbol V
'B2(mod)
'EB20
Term
Definition
intrinsic standoff
The
ratio
voltage drop of the emitter junction.
ratio
(Vp-VF)/VB2B1 where Vp .
is
the forward
interbase modulated
The current
current
current
emitter reverse
The current
current
biased in the reverse direction with respect to the base-2 terminal and the base-1 terminal is open-
is
into the base-2 terminal
when
the emitter
greater than the valley-point current.
into the
emitter terminal
when
it
is
circuited.
•P *
peak -point current
The emitter current
at the
peak point.
Reference to base and emitter symbolism (B, E) refers to the device terminals connected to those regions.
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GLOSSARY UNIJUNCTION TRANSISTORS Definition
Term
Symbol •v
valley-point current
rsB
interbase resistance
The emitter current The
resistance
at the valley point.
between the two bases with the
emitter current equal to zero.
Tj
junction temperature
See page
tp
pulse time
See pages 1-5 and
tw
pulse average time
See page 1-6.
V B 2B1
interbase voltage
The dc voltage between base 2 and base
emitter saturation
The forward voltage between the emitter and base
voltage
at
VEBI(sat)
1
-4.
1-6.
1
1
an emitter current greater than the valley-point
current.
VoBI
The peak voltage measured across the resistor in with base 1 when the device is operated
base-1 peak
voltage
series
as
a
relaxation oscillator in a specified circuit.
VP VV
peak-point
The voltage between the emitter and base
voltage
peak point.
valley-point
The voltage between the emitter and base
voltage
valley point.
V E B1
A CUTOFF REGION
f1
NEGATIVERESISTANCE REGION
SATURATION REGION
VEBKsatl
IE DIAGRAM ILLUSTRATING CURRENT-VOLTAGE CHARACTERISTIC
1-28
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GLOSSARY FIELD-EFFECT TRANSISTORS FIELD-EFFECT TRANSISTORS Terms and Definitions Term
Definition
A
channel
region of semiconductor material in which current flow
influenced
by
a
transverse
electrical
field.
A
is
may
channel
physically be an inversion layer, a diffused layer, or bulk material.
The type of channel
is
carriers during conduction;
depletion-mode operation
The operation of
determined by the type of majority i.e.,
p-channel or n-channel.
a field-effect transistor such that changing the
gate-source voltage from
zero to a finite value decreases the
magnitude of the drain current. depletion-type
A
field-effect transistor
for zero gate-source voltage; the channel conductivity
field-effect transistor having appreciable channel conductivity
may be
increased or decreased according to the polarity of the applied
gate-source voltage. drain (D, d)
A region into which majority carriers flow from the channel.
dual-gate
Alternate term for tetrode field-effect transistor.
field-effect transistor
enhancement-mode operation
The operation of
a field-effect transistor such that changing the
gate-source voltage from
zero to a finite value increases the
magnitude of the drain current. enhancement-type
A
field-effect transistor
conductivity
for
conductivity
may be
field-effect
transistor
zero
having
substantially
gate-source
voltage;
zero
channel
the
channel
increased by the application of a gate-source
voltage of appropriate polarity.
field-effect transistor
.
A
transistor in
which the conduction
is
due
entirely to the flow
of majority carriers through a conduction channel controlled by
an electric field arising from a voltage applied between the gate and source terminals. gate (G, g)
The electrode associated with the region due to the control voltage is effective.
in
which the
electric
field
insulated-gate
A
field-effect transistor
are electrically insulated from the channel.
junction (junction-gate) field-effect transistor
A field-effect transistor that uses one or more gate regions that form p-n junction(s) with the channel.
metal-oxide-semiconductor (MOS)
An
field-effect transistor
layer between each gate electrode and the channel
field-effect transistor having
insulated-gate field-effect transistor in
material.
Texas INCORPORATED Instruments POST OMICI BOX 5012
one or more gate electrodes which
•
DALLAS, TEXAS 7S222
which the
insulating is
oxide
GLOSSARY FIELD-EFFECT TRANSISTORS Definition
Term
A field-effect transistor that has an
n-channel
n-type conduction channel.
field-effect transistor
A field-effect transistor that has a p-type conduction channel.
p-channel field-effect transistor
source
A region from which
(S, s)
A
substrate (U, u) (of a junction field-effect transistor or
semiconductor material that contains a channel, a source, and a
drain and which
an insulated-
majority carriers flow into the channel.
may be connected
to a terminal.
gate field-effect transistor)
substrate (of a thin-film
An
field-effect transistor)
layer,
insulating
the
that supports the thin semiconductor
material
insulating
layer,
and the source, gate, and drain
electrodes.
A field-effect transistor having two independent gates, a source, and a drain. An active substrate terminated externally and
tetrode field-effect transistor
independently of other elements
is
considered a gate for the
purpose of this definition.
A field-effect transistor having a gate, a source,
triode field-effect transistor
and a drain.
GRAPHIC SYMBOLS FOR FIELD-EFFECT TRANSISTORS INSULATED-GATE
JUNCTION-GATE
ENHANCEMENT-TYPE
DEPLETION-TYPE IU
a _1 Ul
z z
o a. i-
< X IU 9 O z o E 1Ui
GiN^+^/s
1-
4w.
.©:
,®: a
©§ s©:
°®°i
Giy^s
Ul
o
J HI z z <
O a.
*©°
4D°
.©:
Ul
Q i O c 1Ul 1-
In
.©5
GlV^f^S
the above drawings of the insulated-gate devices, the substrate (bulk) is shown internally or externally. The symbol at the right illustrates an
terminated either
unterminated (passive) substrate.
gi
yjlj/s
=©: PASSIVE
SUBSTRATE
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS, TEXAS 73222
GLOSSARY FIELD-EFFECT TRANSISTORS Letter Symbols, Terms,
and Definitions
Symbol
Term
bfs.
common-source
bis.
signal
k>os.
input, output, reverse
brs
transfer) susceptance
Cds
drain-source capacitance
small-
(forward transfer,
Definition
The imaginary
part of the corresponding admittance.
See yf s yj s y os and y re Symbols and Vxx(imag) are equivalent. ,
The
,
,
capacitance
.
between
the
in
the forms bx X
drain
and source
terminals with the gate terminal connected to the
guard terminal of a three-terminal bridge.
Cdu
drain-substrate
The capacitance between the
capacitance
terminals
with
the
gate
drain and
and
source
substrate
terminals
connected to the guard terminal of a three-terminal bridge.
short-circuit input
capacitance,
common-
source
Coss
The capacitance between the input terminals
(gate
and source) with the drain short-circuited to the source for alternating current. (Ref.
IEEE 255)
short-circuit
output
The capacitance between the output terminals
capacitance,
common-
and source) with the gate short-circuited to the
(drain
source
source for alternating current. (Ref. IEEE 255)
short-circuit reverse
The capacitance between
transfer capacitance,
the drain and gate terminals with the source connected to the guard terminal of a
common-source
three-terminal bridge.
ForF
noise figure, average or spot
Seepage
9fs.
common-source
9is.
signal (forward transfer,
Vfs. Vis. Vos.
9os.
input, output, reverse
Vxx(real) are equivalent.
9rs
transfer)
G P9G ps
G tg,
small-
The
1-3.
real part of the
corresponding admittance. See
and y rs Symbols .
in
the forms gxX and
conductance
small-signal insertion
power gain, (commongate, common-source)
The ratio, usually expressed in dB, of the signal power delivered to the load to the signal power delivered to the input.
Gts
power gain (commongate, common-source)
The ratio, usually expressed in dB, of the power delivered to the load to the maximum power available from the source.
•D
drain current, dc
The direct current
'D(off)
drain cutoff current
The
small-signal transducer
direct
signal
into the drain terminal.
current
depletion-type
signal
into
transistor
the drain terminal of a
with
a specified reverse gate-source voltage applied to bias the device to the off state.
Texas INCORPORATED Instruments POST OFFICE BOX SO 12
DALLAS. TEXAS 75222
GLOSSARY FIELD-EFFECT TRANSISTORS
'D(on)
Definition
Term
Symbol
direct current into the drain terminal with a
The
on-state drain current
specified forward gate-source voltage applied to bias
the device to the on state.
>DSS
zero-gate-voltage
The
drain current
gate-source voltage
direct current into the drain terminal is
zero. This
in a depletion-type device,
is
when
the
an on-state current
an off-state current
in
an
enhancement-type device.
lG
gate current, dc
The direct current
"GF
forward gate current
The
into the gate terminal.
>GR
The
reverse gate current
direct current
into the
reverse gate current,
The
drain short-circuited
junction-gate
to source
terminal
current
direct
VqsF-
gate terminal with a
reverse gate-source voltage applied. See
'GSS
with a
direct current into the gate terminal
forward gate-source voltage applied. See
Vqsr.
the gate terminal
into
transistor
field-effect
when
of a
the gate
reverse-biased with respect to the source
is
terminal and the drain terminal
is
short-circuited to
the source terminal.
'GSSF
the gate terminal of an
forward gate current,
The
drain short-circuited
insulated-gate field-effect transistor with a forward
to source
gate-source voltage applied and the drain terminal
direct current
into
short-circuited to the source terminal. See
•GSSR
an
reverse gate current,
The
drain short-circuited
insulated-gate field-effect transistor with
to source
gate-source voltage applied and the drain terminal
direct
current
into the gate terminal of
short-circuited to the source terminal. See
In
VqsF-
See page
noise current,
1
a
reverse
VqsR-
-3.
equivalent input
See preferred symbols: bf s or yf s (im a g).
Imtyfs).
bis or Vis(imag).
Im(yj s ),
b
Im(vos).
s
or Vos(imag).
brs ° r Vrs(imag)
ImWrs) IS
source current, dc
The
'S(off)
source cutoff current
The
direct current into the source terminal.
direct current
into
the source terminal of a
depletion-type transistor with a specified gate-drain voltage applied to bias the device to the off state.
'SDS
zero-gate-voltage
The
source current
gate-drain voltage in a
direct current into the source terminal is
zero. This
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
when
the
an on-state current
depletion-type device, an off-state current in an
enhancement-type device.
1-32
is
DALLAS. TEXAS 75222
GLOSSARY FIELD-EFFECT TRANSISTORS Symbol
Term
Definition
NForNF*
noise figure, average or spot
r ds(on)
small-signal drain-
Seepage
1-3.
The
small-signal resistance between the drain and source terminals with a specified gate-source voltage applied to bias the device to the on state. For a
source on-state resistance
depletion-type device, this gate-source voltage
may be
zero.
The dc resistance between the drain and source terminals with a specified gate-source voltage applied to bias the device to the on state. For a depletion-
static drain-source
TJS(on)
on-state resistance
type device, this gate-source voltage Re(yfs),
See preferred symbols: gf s or
Re(vis), Sis
Re(yos).
may be
zero.
yfs(real).
or yj s (real),
9os or Vos(real). 9rs or Vrs(real)
Re(Vrs)
Rfl
thermal resistance
SfgOrS21g,
forward transmission coefficient
The
sfsOrs2i s
(common-gate, common-source)
coefficient
Seepages
1-2
and
respective
with
1-3.
forward the
or
reverse
transistor
in
transmission
the
indicated
configuration. See pages 1-3 and 1-4. «rg or s 12g,
reverse transmission coefficient
srsorsifc
(common-gate, common-source)
si
g
sj
s
ors 11g ors 11s
,
The
input reflection coefficient
(common-gate, common-source)
respective input or output reflection coefficient with the transistor in the indicated configuration. See
page
SogOrs 2 2g,
1-4.
Sosors22s
output reflection coefficient (common-gate, common-source)
Tj
junction temperature
Seepage
*d(off)
turn-off delay time
The time
1-4.
interval from a point 90 percent of the amplitude on the trailing edge of the input pulse to a point 90 percent of the maximum
maximum
amplitude on the
trailing edge of the output pulse. This corresponds to storage time for a multifunction transistor. See pages 1-5 and 1-6.
NOTE: This definition assumes a device initially in the off state with an input pulse applied of proper polarity to switch the device to the
•NF and NF
abbreviations are often used for sumbols F and F: however, the symbols
F*
SO 12
state.
and F are preferred.
TexasINCORPORATED Instruments POST OFFICE »OX
on
DALLAS, TEXAS 7S222
1-33
GLOSSARY FIELD-EFFECT TRANSISTORS
td(on)
Definition
Term
Symbol
turn-on delay time
from a point 10 percent of the
The time
interval
maximum
amplitude on the leading edge of the input
to a point 10 percent of the maximum amplitude on the leading edge of the output pulse.
pulse
This corresponds to delay time for a multijunction
See pages 1-5 and 1-6. This definition assumes a device
transistor.
NOTE:
initially in
the off state with an input pulse applied of proper polarity to switch the device to the
See pages 1-5 and
time
fait
toff
turn-off time
The sum of
ton
turn-on time
The sum of td(on) + V- See pages
pulse time
See pages 1-5 and
1-6.
and
1 -6.
See pages
time
tr
rise
tw
pulse average time
V(BR)GSS
gate-source
breakdown
Seepage
1
td( ff)
-5
state.
1-6.
tf
*P
on
+
tf.
See pages 1-5 and
1-6.
1-5 and 1-6.
1-6.
voltage between the gate and source
The breakdown
terminals with the drain terminal short-circuited to
voltage
the source terminal.
NOTE: The symbol V(BR)GSS with
junction-gate
field-effect
is
primarily used
transistors.
The
symbols V(BR)GSSR iV@
9
V @ 500 mA V @> 500 mA 0.5V@500mA 0.5 V @ 500 mA 0.5 V @ 500 mA 0.5 V @ 500 mA
N-P-N OFFSET VOLTAGE
(Continued)
v (BR)CEO
®I C 500
SWITCHES
ft
50
3N108 3N110 3N109 3N111 2N2944A 2N2944 2N2945A 2N2945 2N2946A 2N2946
PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
TO-72
P13
TO-72
P13
TO-72
P13
TO-72
P13
TO-46
P14
TO-46
P14
TO-46
P14
TO-46
P14
TO-46
P14
TO-46
P14
•See package drawings on page 2-20,
Texas INCORPORATED Instruments POST OFFICE BOX 5012
DALLAS, TEXAS 75222
211
TRANSISTOR SELECTION GUIDES
N-P-N *FE1
"FE
@ c
AV BE
h FE2
MIN-MAX
l
MAX
MIN
10
50-300
0.9
10
50-300
0.8
60-240
0.9
5mV mV 1.5 mV
60-240
0.9
1.5mV
60-240
0.9
60-240
0.9
60-240
0.9
60-240
0.9
60-240
0.8
60-240
0.8
100-300
0.9
mA mA 10 mA IOmA 10 mA 10 mA 10 mA IOmA 10 mA 10 mA 10 mA 10mA 10mA 10mA 10 mA 10 mA 10 mA 10 mA 10 mA 10 mA 10 mA 100 mA 100 mA 100 mA 1
10
150*00
0.9
150-600
0.9
150-600
0.9
150-600
0.9
150-600
0.9
150-600
0.9
150-600
0.9
150-600
0.8
150-600
0.8
25-150
0.9
3mV 3mV 3mV 3mV 5mV 5mV 5mV 10 mV 1.5 mV 1.5 mV 3mV 3mV 3mV 3mV 3mV 5mV 5mV 5mV
25-150
0.8
15mV
30-90
0.9
150-600
0.9
5mV 3mV
n
100-300
mA
.
0.8
@ C l
MAX 10mV/°C 20
Mvrc
5mV/°C 5mV/°C 10mV/"C
lOMvrc 10mV/°C 10mV/°C
20mV/°C 20mV/°C 10mV/°C 20 mV/°C
5mV/°C 5mV/"C 10mV/°C 5mV/°C 10mV/°C iomv/°c 10mV/°C
"FE2 MIN
2IM2979
20 mV/°C
25mV/°C
2IM2223A
25mV/°C 10mV/°C 10mV/°C
2N2223 2N2O60 2N2453
AV BE
MAX
at
MAX
DEVICE TYPE
10
40-300
0.9
5mV
iomV/°c
2N3347
40-300
0.8
lOmV
20 mV/°C
40-300
0.6
20
40 mV/°C
100-300
0.9
100-300
0.8
100-300
0.6
20-120
0.9
20-120
0.8
40-120
0.9
mV 5mV 10 mV 20 mV 5mV 10 mV 5mV
2N3348 2N3349 2N3350 2N3351 2N3352 2N2802 2N2803 2N2805 2N2806 2N3810 2N3808 2N3811 2N3809
10mV/°C
20mV/°C 40 mV/°C
10mV/°C 20 mV/°C
10mV/°C
40-120
0.8
10mV
20 mV/°C
150-450
0.9
10mV/°C
150-450
0.8
300-900
0.9
300-900
0.8
3mV 5mV 3mV 5mV
20
Mvrc
10mV/°V 20mV/°V
POLARITY PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
'See package drawings on page 2-20.
2-12
PACKAGE*
CHIP
TO-78
N11
TO-78
Nil
TO-78
N11
TO-78
N11
TO-78
N11
TO-71
N11
TO-78
Nil
TO-71
N11
TO-78
N11
TO-71
Nil
TO-78
N11
TO-78
N11
TO-78
N11
TO-78
N11
TO-78
Nil
TO-78
N11
TO-78
Nil
TO-71
N11
TO-71
N11
TO-78
N11
TO-71
N11
TO-78
N23
TO-78 TO-78
N23 N23
TO-78
N11
MATCHED DUALS
10
mA mA 10 mA 10mA 10 mA 10 mA IOOmA 100 mA IOOmA 100 mA 100mA IOOmA 100 mA 100 mA
NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN
2N2639 2N2640 2N2915A 2N2919A 2N2919 2N2974 2N2915 2N2978 2N2917 2N2976 2N2642 2N2643 2N2920A 2N2916A 2N2916 2N3680 2N2920 2N2975 2N2918 2N2977
20 mV/°C
POLARITY
AV BE
•>FE1
MIN-MAX
DEVICE TYPE
*T
P-IM-P
hFE
MATCHED DUALS
AV B E
Texas INCORPORATED Instruments POST OFFICE BOX 5013
*
DALLAS. TEXAS 75222
PACKAGE*
CHIP
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TO-78
P19
TRANSISTOR SELECTION CUIDES UNMATCHED DUALS
N-P-N
NOISE FIGURE
v (BR)CEO
•>FE
MIN-MAX
®'c
F
e
DEVICE TYPE
f
F (None BWI
MIN
POLARITY
PACKAGE*
CHIP
MAX
45 V
THE (15.7 kH2> 4 dB @ kHz 4 dB @ 1 kHz
100-300
45
V
4dB"
dB@
10 Hz
2.5dB@100Hz 2.5dB@100Hz 2.5dB@100Hz 2.5dB@1O0Hz 2.5dB@100Hz
2dB@1000Hz 2dB@1000Hz 2dB@1000Hz 2dB@1000Hz 2
dB® 1000 Hz
MIN
mA
1SmA-50mA
mA mA 9mA-18mA
0.8
mA-1 .6
5 mA-20
2.5dB@100Hz 2.6dB@10Hz
5dB@10Hz 5 dB @ 10 Hz SdB@10Hz 5dB@10Hz 4 dB @ 20 Hz 4 dB @ 20 Hz 6 dB @ 20 Hz
V (BR)GSS
5 mA-20
10 Hz
1.5dB@10Hz 2.5dB@100Hz 2.5
'DSS
MIN-MAX
15mA-50mA
mA 0.5 mA-2.5 mA O.S mA-2.5
2mA-10mA 2 mA-10 mA 0.2 mA-1 mA mA-4 mA 3 mA-1 5 mA
0.8
0.5 mA-1
mA
V V 40V 20
2N6451
20
2N6453
mA-5 mA 4 mA-8 mA 7 mA-14 mA 2.5 mA-5 mA 4 mA-8 mA
V 25 V 50V 50V 50V 50 V 50V 50V
2N6454 A5T3821 2N3821
2N3822
A5T3822 2N3460 2N3459 2N3458 2N5358
50 V
2N5360
V
2N5361
40 V
2N5362
V
30 V
2N5363 2N5953 2N5952
mA
30 V
2N5951
10mA-15mA
V 30 V
2N5950 2N5949
7 mA-1 3
12 mA-1 8
40
30 V
30
mA
N N N N N N N N N N N N N N N N N N N N N N N
2N6452 2N5364
40
40
2.5
POLARITY
2N5359
25 V
40 V 40 V
1.5mA-3mA
CHANNEL
DEVICE TYPE
PACKAGE* TO-72
CHIP
TO-72
JN55 JNS5
TO-72
JN51
TO-72
JN55
TO-72
JN51
TO-72
JN55
AAA
JN51
TO-72
JN51
TO-72
JN51
AAA
JN51
TO-18
JN51
TO-18
JN51
TO-18
JN51
TO-72
JN51
TO-72
JN51
TO-72
JN51
TO-72
JN51
TO-72
JN51
AAA AAA AAA AAA AAA
JN51 JN51 JN51
JN51 JN51
JFET P-CHANNEL LOW-FREQUENCY, LOW-NOISE AMPLIFIERS NOISE FIGURE
F@f MAX 5dB@10Hz 5dB@10Hz 2.5
dB
100 Hz
2.5dB@100Hz 2.5dB@100Hz 2.5dB@100Hz 2.5dB@100Hz 2.5dB@100Hz
3dB@1000Hz 3dB@1000Hz 3 dB ® 1000 Hz 3 dB @ 1000 Hz 3dB@1000Hz 3d8@1000Hz 4 dB @ 1000 Hz 4 dB @ 1000 Hz
V (BR)GSS [V(BR)DGOl
•oss
MIN-MAX
DEVICE TYPE
MIN
1
mA-6 mA mA-6 mA mA-5 mA
1
mA-5mA
1 1
mA mA 4 mA-1 6 mA 4 mA-1 6 mA 0.9 mA-4. 5 mA mA-3 mA mA-3 mA 2 mA-6 mA 2 mA-6 mA 2 mA-10 mA 5 mA-15 mA 2 mA-9 2 mA-9
V
40 V 40 V 40 V 40 V 40 V
40 V
30V
1
[20 V]
1
20
5mA-15mA
2N2500 2N3332 2N5460 A5T5460 2N5461 A5T5461 2N5462 A6T5462 2N2608 2N2497 2N3329 2N2498 2N3330 2N2609 2N2499 2N3331
[20 V]
20
CHANNEL POLARITY
V
[20 V]
20 V 30 V [20 V]
20 V
*See package drawings on page 2-20.
2-14
Texas INCORPORATED Instruments POST OFFICE BOX 9012
•
DALLAS. TEXAS 7S222
PACKAGE*
CHIP
P
TO-5
JP71
P
TO-72
JP71
P
TO-92
JP71
P
AAA
JP71
P
TO-92
JP71
P
AAA
JP71
P
TO-92
JP71
P
AAA
JP71
P
TO-18
JP71
P
TO-5
JP71
P
TO-72
JP71
P
TO-5
JP71
P
TO-72
JP71
P
JP71
P
TO-18 TO-5
P
TO-72
JP71
JP71
TRANSISTOR SELECTION GUIDES JFET N-CHANNEL GENERAL PURPOSE AMPLIFIERS t*l»« MIN-MAX
V (BR)GSS
mmho ©1 kHz 1-4 mmho © 1 kHz 1-4 mmho © 1 kHz 1.2-3.6 mmho © 1 kHz 1.4-4.2 mmho ©1 kHz 2-6 mmho © 1 kHz 2-5 mmho » 1 kHz 0.6-3 mmho • 1 kHz 0.5-3 mmho © 1 kHz 0.5-3 mmho 9 1 kHz 0.5-3 mmho 9 1 kHz 3-6.5 mmho * 1 kHz 3-6.6 mmho 9 1 kHz 2-6.5 mmho 9 1 kHz 1 .5-4.5 mmho © 1 kHz 2-6.5 mmho 9 1 kHz 4 typ mmho 9 1 kHz 2-5.5 mmho 9 1 kHz 2-6.5 mmho 9 1 kHz 2.5* mmho 9 1 kHz 2.5-6 mmho 9 1 kHz 4.8 typ mmho 9 1 kHz 3.5-6.6 mmho © 1 kHz 2.5-6 mmho © 1 kHz 2.7-6.5 mmho 9 1 kHz 3.5-7.5 mmho 9 1 kHz 3.5-7.5 mmho 9 1 kHz
40 V 30 V 30 V 40 V 40 V 30 V 30 V
>D8S
MIN-MAX
mA 0.6 mA-3 mA 0.6 mA-3 mA 0.8 mA-1. 6 mA 1.6 mA-3 mA 2mA-6mA 2mA-6mA 0.6
mA-1
2mA-10mA 2mA-10mA 2 mA-1
mA
2mA-10mA 2 mA-1
mA
2mA-10mA 2 mA-20 mA
mA-5 mA 2.6 mA-6 mA 2.5 mA-8 mA 4 mA-8 mA 4 mA-8 mA 2.5
6 mA-1 5 mA
5 mA-1 6 mA 6 mA-26 mA
7mA-13mA 7
mA-14 mA
9mA-18mA 10 mA-1 6 mA
12mA-18mA 12mA-24mA 12 mA-24
MIN
1-3
2N5358 2N4220 2N4220A 2N5359 2N5360 2N4221
2N4221A A5T6450 2N6450
200V 200V 300 V
A5T6449 2N6449 2N3822
300 V
50V 50 V
30V
A5T3822 2N3819 2N5361 2NS953
25 V
TISS8
40 V
2N5362
30 V
30V 30 V
2N5952 2N4222 2N4222A
25 V
TIS59
30 V
2NS951
40 V
2N5363 2N5364 2NS950 2N5949 2N3824 A5T3824
25
V
40 V
40V 30V 30V 50V 50V
mA
DEVICE TYPE
CHANNEL
PACKAGE*
POLARITY N N N N N N N N N N N N N N N N N N N N N N N N N N N N
CHIP
TO-72
JN51 JN51
TO-72 TO-72
JN51
TO-72
JN51
TO-72
JN61
TO-72
JN51
TO-72
JN51
AAA
JN54 JN54
TO-39
AAA TO-72
JN54 JN54 JN51
AAA
JN51
TO-39
TO-92
JN51
TO-72
JN51
AAA
JN51
TO-92
JN51
TO-72
JN51
AAA
JN51
TO-72
JN51
TO-72
JN51
TO-92
JN51
AAA
JN51
TO-72
JN51
TO-72
JN51
AAA AAA
JN51 JN51
TO-72
AAA
"
JN51 |
JN51
1
JFET P-CHANNEL GENERAL PURPOSE AMPLIFIERS MIN-MAX 0.3
mA-1 6 mA
0.3
mA-1 6 mA
1
mA-6 mA mA-5 mA mA-1 5 mA
1
mA-1 6 mA
1 1
mA 2 mA-9 mA 4 mA-1 6 mA 4 mA-16 mA 2 mA-9
*Sm
V (BRIGSS
*hl»« MIN-MAX
'DSS
MIN
mmho 9 1 1-5 mmho 9 1 1-4 mmho © 1 1-4 mmho © 1 2.2-5 mmho ©1 2.2-6 mmho © 1 1.5-6 mmho ©1 1.5-6 mmho ©1 2-6 mmho © 1 2-6 mmho ©1 0.8-5
kHz
20 V
kHz
20 V
kHz
40 V
kHz kHz
40 V
kHz
V V 40V 40V 40 V
20 V 20
kHz
40
kHz kHz kHz
DEVICE TYPE
CHANNEL POLARITY
PACKAGE*
CHIP
2N3820 2N3909
TO-92 TO-72
JP71
2N5460 A5T5460 2N2386A 2N3909A 2N5461 A5T5461 2N5462 A5T5462
TO-92
JP71
JP71
AAA
JP71
TO-5
JP71
TO-72
JP71
TO-92
JP71
AAA
JP71
TO-92
JP71
AAA
JP71
packag* drawings on page 2-20.
Texas INCORPORATED Instruments *o»t
owee
box soia
.
Dallas, tkxas 7saaa
2-15
2
TRANSISTOR SELECTION GUIDES JFET HIGH-FREQUENCY AMPLIFIERS (N-CHANNEL) GAIN
NOISE FIGURE l»filO«
MAX 0.8
pF
0.8 pF
1pF 1pF 1pF 1.2
pF
1.3
pF
2pF 2pF 2pF 2pF 2pF 2pF 2pF 2pF 2pF 2pF 2pF 2pF
MIN
mmho © 400 MHz mmho 9 400 MHz 2.5 mmho 9400 MHz 4 mmho 9400 MHz 4 mmho 9 400 MHz 5.5 mmho 9 460 MHz 5 mmho 9 460 MHz 0.8 mmho 9 100 MHz 0.9 mmho 9 100 MHz 1.4 mmho 9 100 MHz 1.7 mmho 9 100 MHz 1.7 mmho A 200 MHz 1.9 mmho 9 100 MHz 2.1 mmho 9 100 MHz 2.2 mmho 9 100 MHz 2.7 mmho 9 200 MHz 3 mmho 9 200 MHz 3.2 mmho 9 200 MHz 3.2 mmho 9 200 MHz 4 4
F9f MAX 4 dB 9 400 MHz 4 dB® 400 MHz
10dB9400MHz
400 MHz
10dB9400MHz
9 460 MHz
16dB 9460 MHz
4 dB
3.5
dB
(9
dB 2.6 dB 2.5 dB 2.6 dB 2.5
9 9 9 9
Gp,9f MIN 10 dB
9 400 MHz
DEVICE TYPE
PACKAGE*
CHIP
100 Hz
2N4416 2N4416A 2N5246 2N6246 2N5247 2N5397 2N6398 2N5358 2N5359 2N53S0
100 Hz
2N63S1
TO-72
2N4224
TO-72
JN51
2N6362 2N5363
TO-72
JN61
TO-72
JN61
2N63S4 2N4223 2N5248 2N3823 A5T3823
TO-72
JN51
TO-72
JN51
TO-92
JN51
TO-72
JN51
AAA
JN51
100 Hz 100 Hz
9 100 Hz 9 100 Hz 2.5 dB® 100 Hz 5dB9200MHz dB 2.6 dB 2.5
10dB9 200MHz
9 100 MHz 2.5 dB 9 100 MHz 2.5 dB
TO-72
TO-72
AAA AAA AAA
JN53 JN53 JN53 JN53 JN63
TO-72 TO-72
TO-72
JN61
TO-72
JN61
TO-72
JN51 JN61
IGFET HIGH-FREQUENCY AMPLIFIERS (N-CHANNEL, DEPLETION-TYPE) l*fcl*«
MIN-MAX
0.03 pF 0.03 pF 0.03 pF 0.03 pF 0.03 pF 0.03 pF 0.05 pF 0.05 pF
0.06 pF 0.36 pF
*Sm
2-16
NOISE FIGURE
Cm MAX
mmho 91 mmho 91 8-20 mmho 91 8-20 mmho 9 1 10-22 mmho 9 1 10-22 mmho 91 15-35 mmho 91 17-40 mmho 91 17-40 mmho 91 5-12 mmho 9 1 7-17
kHz
7-1 5
kHz kHz
GAIN Gp,9f MIN
F9f MAX 4 dB 9 45 MHz 6 dB 9 45 MHz 4.5 dB 9 200 MHz
9 46 MHz 9 45 MHz 15 dB 9 200 MHz 26 dB 20 dB
15dB 9200 MHz
kHz
kHz
6 dB
9 450 MHz
9 450 MHz 9 200 MHz 27 dB 9 45 MHz
14 dB
kHz
17 dB
kHz kHz
3.6
9 45 MHz dB 9 200 MHz
kHz kHz
6
dB® 200 MHz
4 dB
9 200 MHz 21 dB 9 200 MHz 13.5 dB 9 200 MHz 24 dB
package drawinffi on paga 2-20.
TexasINCORPORATED Instruments POST OFFICE BOX
SOI
DALLAS. TEXAS 7S222
DEVICE TYPE 3N206 3N203 3N201 3N202 3N204 3N205 3N213 3N211 3N212 3N128
PACKAGE* TO-72 TO-72 TO-72 TO-72 TO-72
TO-72 TO-72 TO-72 TO-72 TO-72
CHIP
MN81 MN81 MN81 MN81 MN81 MN81
MN85 MN85 MN85 MN82
TRANSISTOR SELECTION GUIDES
JFET N-CHANNEL SWITCHES
AND CHOPPERS
rdf(on)
VQSbrff)
VfBRIOSS
'oss
MAX 25 n 25 n 25 n 25 n 25 n 30n 30 n 30 n 40 n 40 n 40 n 40 n 40 n
MIN-MAX 4-10 V 4-10 V 4-10 V 4-10 V 4-10 V 4-10 V
MIN
MIN-MAX
son eon eon eon eon eon eon eon so n
n too n ioo n 200 n 210 n 220 n 250 n 250 n ioo
30
30 V 30 V 40 V 40 V
40 V 40 V 40 V 30 V 30 V 30 V 40 V 40 V 40 V
4-10V
V V 2-6 V 6-10
2-6
2-6
V
V
V 2-6 V 2-7 V 0.8-4 V 0.8-4 V 0.8-4 V 0.8-4 V 0.8-4 V 2-5 V 2-5 V 1-5 V 0.5-3 V 0.5-3 V 2-6 V 3-7 V 2.5-6 V 2-6
30 V 30 V 30 V
40
V
40 V 40 V 40 V 40 V 40 V 40 V 40 V 30 V 30 V
30 V
4-6V
50 V |
50V
mA mA 50mA 50mA 50mA 50-1 50 mA 50-1 50 mA 30mA 20-100 mA 20-100 mA 20-100 mA 20-100 mA 20-1 00 mA 15mA 8-80 mA 8-80 mA 8-80 mA 8-80 mA 8-80 mA 25-75 mA 25-75 mA 8mA 5-30 mA 5-30 mA 10-60 mA 12-18 mA 10-15 mA 2mA 12-24 mA 12-24 mA
DEVICE TYPE
PACKAGE*
60-
TIS73
AAA
50-
2N4859
TO-18
2N4859A
TO-18
2N4856 2N4856A
TO-18
2N3970 2N4391 2N4091
TO-18 TO-18
TO-18 TO-18
TIS74
AAA
2N4860 2N4860A 2N4857A 2N4857 2N4092
TO-18 TO-18 TO-18 TO-18
TO-18
TIS76
AAA
2N4861
TO-18
2N4861A
TO-18
2N4858
TO-18
2N4858A
TO-18
2N3971
TO-18
2N4392
TO-18
2N4093
TO-18
2N3972 2N4393
TO-18
CHIP JN52 JN52 JN52 JN52 JN52 JN52 JN62 JN52 JN62 JN52 JN52 JN52 JN62 JN52 JN52 JN52 JN52 JN52 JN52 JN52 JN52 JN52
TO-18
JN52 JN52 JN52
2N5950
AAA AAA
JN51
2N3966
TO-72
JN51
2N3824
TO-72
JN51
A5T3824
AAA
JN51
2N5549 2N5949
TO-18
I
JN51
JFET P-CHANNEL SWITCHES AND CHOPPERS r
dt(on)
MAX 300 n 300 n 400 n 400 n 800
v GS(off>
V(BR)GSS
dss
MIN-MAX
MIN
MIN-MAX
V 1-5.5 V
25 V
1-6.5
25 V
1.8-9
V
40 V
1.8-9
V
40 V
ft
1-7.5
soon
1-7.5
V V
40V 40 V
mA 2mA 4-16 mA 4-16 mA 2-9 mA 2-9 mA
DEVICE TYPE
PACKAGE*
CHIP
2N3994 2N3994A 2N5462
TO-72
JP72
TO-72
JP72
TO-92
JP71
AST 5462
AAA
JP71
2N5461
TO-92
JP71
A5T5461
AAA
JP71
2-
•See package drawings on page 2-20.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
DALLAS, TEXAS 79222
2-17
TRANSISTOR SELECTION GUIDES IGFET N-CHANNEL SWITCHES r ds(on)
vGS(th)
V(BR)DSS
'D(on)
MAX
MIN-MAX
MIN
MIN-MAX
n 35 n
V
50-
20 V
50-
50
20 V
50-
20
V
50-
25
V
10-
V
10-
V 20V
10-
20
20
fi
70S1
n 200 n 200 n 300 n 200
0.5-1.5
V
1-2
V
25
1.5-3
V
25
DEVICE TYPE 3N214 3N215 3N216
mA mA mA mA mA mA mA mA
5-
VQS(th)
V (BR)DSS
MAX
MIN-MAX
MIN 26 V 26 V 40 V 30 V
n
1.5-5
eotypn
1.5-5
eotyp
300
n n n
300
n
250
300
soon 600
n
looon
V
V 2-5 V 2-5 V
1.5-3.2
3-5
V V
V 2-6 V 3-5
PACKAGE* TO-72
D D
TO-72
3N217 3N169
D
TO-72
E
TO-72
3N170 3N171 3N153
E
TO-72
E
TO-72
D
TO-72
TO-72
CHIP
MN84 MN84 MN84 MN84 MN83 MN83 MN83 MN82
AND CHOPPERS
40-120
DEVICE TYPE 3N160
E
TO-72
40-120
3N161
E
TO-72
MP92 MP92
3N163
E
TO-72
MP91
3N164 3N155A 3N166A 3N155 3N156 3N174
E
TO-72
E
TO-72
E
TO-72
E
TO-72
MP91 MP91 MP91 MP91 MP91 MP93
'D(on)
MIN-MAX
mA mA 5-30 mA 3-30 mA 5mA 5mA 5mA 5mA 3-12 mA
50V 50 V 50V 50V 30 V
V
1.5-3.2
ENH/DEPL
D
IGFET P-CHANNEL SWITCHES 'ifc(on)
AND CHOPPERS
ENH/DEPL
PACKAGE*
E
TO-72
E
TO-72
CHIP
JFET DUALS (N-CHANNEL) dss MIN-MAX
'DSS1
'DSS2
hrf.li
AV 0S
IVf.12
MAX
MIN
MIN
0.5-8
0.95
0.97
0.5-8
0.95
0.95
0.96
0.95
0.9
0.95
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.9
0.8
0.8
0.8
0.8
0.8
0.8
mA mA 0.5-8 mA 0.5-8 mA 0.5-8 mA 0.5-8 mA 0.5-8 mA 0.5-8 mA 0.5-8 mA 0.5-8 mA 0.5-8 mA
5mV 5mV 5mV mV 10 mV 10 mV 15 mV 10 mV 15 mV 15 mV 15 mV 10
DEVICE TYPE
PACKAGE*
CHIP
2N5545 2N6045
TO-71
JN51
TO-71
JN51
TIS25
TO-78
JN61
2N5546
TO-71
JN51
TIS69
2TO-92
JN61
2N5046 2N5547
TO-71
JN51
TO-71
JN51
TIS26
TO-78
JN51
2N5047
TO-71
JN51
TIS27
TO-78
JN51
TIS70
2TO-92
JN61
PACKAGE*
CHIP
IGFET DUALS (P-CHANNEL, ENHANCEMENT-TYPE) 'dtlon)
VGS(th)
'D(on)
MAX 400 n 400 n
MIN/MAX -3/-6 V -3/-6 V
MIN
mA -1.5 mA -1.5
DEVICE TYPE 3N207 3N208
•See package drawings on peg* 2-20.
2-18
Texas INCORPORATED Instruments POST OPPICK SOX B012
DALLAS, TEXAS 7SM2
TO-76 TO-76
MP94 MP94
TRANSISTOR SELECTION GUIDES UNIJUNCTION, CONVENTIONAL n
"P
MIN-MAX
MAX
BB MIN
0.47-0.62
6flA
0.47-0.62
25 mA
0.47-0.62 0.47-0.80
25 mA 25 mA
0.51-0.62
6 mA
0.51-0.62
6»iA
0.51-0.62
12 ^A
0.51-0.62
12/iA
0.51-0.62
12 mA
0.51-0.62
12
0.51-0.69
mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 4 mA 4 mA 2 mA 2 mA 2 mA 2 mA 8 mA 8 mA 8 mA 8 mA 8 mA 8 mA 4 mA 2 mA 8 mA 8 mA 8 mA 8 mA 1 mA 4 mA 6 mA 2 mA 2 mA 8
mA
2 mA
0.51-0.69
2jiA
0.55-0.82
2fiA
0.55-0.82
2 mA
0.55-0.82
5pA 5vA
0.55-0.82 0.56-0.68
6(iA
0.56-0.68
6mA
0.56-0.68
12 mA
0.56-0.68
12 MA
0.56-0.68
12
0.56-0.68
mA 12 mA
0.56-0.75
5jiA
0.56-0.75
2juA
0.62-0.75
6 mA
0.62-0.75
12M
0.62-0.75
12
mA
0.68-0.82
2 mA
0.68-0.82
2»iA
0.70-0.85
2 mA
0.70-0.85
0.4
0.74-0.86 0.74-0.86
|
mA
1
(jA
1
«A
MIN-MAX 4.7-9.1 kn 4.7-9.1 kn 4.7-9.1 kn 4-12 k« 4.7-6.8 kn 6.2-9.1 kn 4.7-6.8 kn 4.7-6.8 kn 6.2-9.1 kn 6.2-9.1 kn 4-9.1 kn 4-9.1 kn 4-12 kn 4-12 kn 4-9.1 kn 4-9.1 kn 4.7-6.8 kn 6.2-9.1 kn 4.7-6.8 kn 4.7-6.8 kn 6.2-9.1 kn 6.2-9.1 kn 4.7-9.1 kn 4.7-9.1 kn 4.7-6.8 kn 4.7-6.8 kn 4.7-6.8 kn 4.7-9.1 kn 4-8 kn 4.7-9.1 kn 4.7-9.1 kn 4-12 kn 4-12 kn
DEVICE TYPE 2N1671B
PACKAGE* U
2N1671
U
2N1671A 2N2160 2N489B 2N490B 2N489 2N489A 2N490 2N490A 2N4892 2N4947 2N4893 2N4948
u
u u u u u u u
AAA OOO AAA OOO
TIS43
TO-92
2N4891
AAA
2N491B 2N492B
U
2N491A 2N492 2N492A 2N4851
2N493B 2N493 2N493A 2N2647 2N3980 2N4852 2N4853 2N4894 2N4949
U
U42 U42
U u
BAR BAR BAR
OOO OOO OOO OOO AAA OOO
U42 U42 U42 U42 U42 U42
u
i
U42 U42 U42 U42 U42 U42
OOO OOO
U
2N2646
BAR BAR BAR BAR BAR BAR BAR BAR BAR BAR
BAR BAR BAR BAR BAR BAR
U U U
2N491
CHIP
UNIJUNCTION, PROGRAMMABLE
1
lp®R G
lyORG
MAX
MIN
»iA@iokn
1
uA@10kn
i
ma @
io
kn
2MA@10kn 2mA@ lOkn -5pA@10kn
5MA@10kn .
5mA @
10
kn
DEVICE TYPE A7T6028
25uA@10kn 50mA@ lOkfi 50 mA @ 10 kn 50 mA @ 10 kn ia
10
M@
TO-92
CHIP
AAA
U41 U41 U41
2N6117 A5T6117
TO-18
U41
AAA
U41
A7T6027 2N6116 A5T6116
TO-92
U41
2N6118 A5T6118
kn 70 ma @ 10 kn 70pA@ 10 kn 70 10 kn 50 mA
PACKAGE*
TO-18
TO-18
U41
AAA
U41
'See package drawings on page 2-20.
Texas INCORPORATED Instruments POST OFFICE BOX
Ml 2
•
DALLAS, TBXAS 79223
2-19
TRANSISTOR SELECTION GUIDES PACKAGE DRAWINGS
u TO-5
TO-18
TO-39
TO-71
TO-72
TO-76
TO-46
TO-52
SHORT CAN VERSION
AAA
TO-116
2-20
OF TO-78
Instruments Texas INCORPORATED POST OFFICE BOX 9012
•
DALLAS, TEXAS 75223
TO-92
OOO
B Transistor Interchangeability
a
TRANSISTOR INTERCHANGEABILITY These
of low-power (generally one watt or
lists
design engineer in determining the is
a
summary of the
These
recommended
significant ratings
and
are extensive (approximately
lists
less
of
power
dissipation in free-air) transistors are designed to assist the
when only
Tl replacement
the device type
number
is
known. Also included
electrical characteristics of the referenced types.
4600
entries) but
JEDEC
not definitive.
An
attempt was made to include
all
current and
and nonregistered. Undoubtedly there are some inadvertent omissions. Purposely omitted are the European PROELECTRON types, Japanese 2S types, and "hobbyist" types. recently obsolete domestic types, both
registered
Careful engineering judgement has been used to provide the final application
recommended
on the
specifications alone;
in selecting a
replacement except
Tl replacement based
might dictate another choice. Equally careful judgement should be used
where the recommended replacement type number coincides with the referenced type. In
most
cases, the
recommended replacement
has the same general package as the referenced type; that
is,
plastic for plastic
and metal for metal. For plastic-encapsulated devices, the "recommended" replacement has the same or similar terminal assignments as the referenced type although this terminal assignment may not be truly preferred. The user may consider this.
ORGANIZATION These interchangeability
lists
are divided into six broad classes as follows:
Master List of Registered Types
The
3-1
Master List of Nonregistered Types
3-63
Registered Field-Effect Transistors
3-92
Nonregistered Field-Effect Transistors
3-104
Registered Unijunction Transistors
3-115
Nonregistered Unijunction Transistors
3-117
Field-Effect Transistor and Unijunction Transistor
lists
are subsets of the appropriate Master List, either registered
or nonregistered.
Every effort has been made to ensure the accuracy of each entry. However, Tl makes no warranty as to the information furnished and the user assumes
all
risk in
the use thereof.
KEY TO MANUFACTURER CODES CR —
Crystallonics Division, Teledyne Incorporated
— Fairchild Semiconductor Corporation GE - General Electric Company Gl - General Instrument Corporation IN — Intersil, Incorporated F
M - Motorola Semiconductor Products NA — National Semiconductor Corporation RC - RCA Corporation SI - Siliconix, Incorporated Tl — Texas Instruments Incorporated
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM RATMOS
. TTM
NUMKR
s y
e 3 8
n
BJCTMCAL CHARACTBUSTICS
'T
MPUCEMMT Ot NEAREST
QUVAUNT
*CBO
(mW)
(V)
(V)
MW
*TC-25' C ,
|
MAX •
•f.
vCE(«ri)
•w
v«o
TA -25''C
"C
MAX •
(mA) (V)
• tc
IT
MM
(mA)
2N117 2N118 2N118A 2N119
NPN NPN NPN NPN
GP GP GP GP
2N117 2N11S 2N118A 2N119
150 150 150 150
30 30 45 30
2N120 2N160 2N160A
NPN NPN NPN NPN
GP GP GP GP
2N120 2N2217 2N2217 2N2217
150 150 150 150
45 40 40 40
76-333
NPN NPN NPN NPN
GP GP GP GP
2N2217 2N221S 2N2218 2N2218
150 150 150 150
40
19-39
40 40
19-199
40
39-199
2N163A 2N243 2N244 2N25S
NPN NPN NPN
2N2218 2N243 2N244 2N2906
150 750 750 250
40 60 60
39-199
PNP
GP GP GP GP
30
30
15
2N2J9 2N260 2N260A
PNP PNP PNP PNP
GP GP GP GP
2N2906 2N2906 2N2906 2N2906
250 200 200 200
30 10 30 75
30
32
2N262 2N262A 2N263 2N264
PNP PNP
NPN NPN
GP GP GP GP
2N2904 2N2906 2N2218 2N2217
200 200 150
2N327 2N327A 2N327R 2N32S
PNP PNP PNP PNP
GP GP GP GP
2N2904 2N2904 2N2904 2N2904
2N328A 2N32S1 2N329 2N329A
PNP PNP PNP PNP
GP GP GP GP
2N329B 2N330 2N330A 2N332
PNP PNP PNP
NPN
GP GP GP GP
2N2906 2N2906 2N332
2N332A 2N333 2N333A 2N334
NPN NPN NPN NPN
GP GP GP GP
2N332A 2N333 2N333A 2N334
2N16I
2N161A 2N162
2NH2A 2N163
2N26I
9-1 9
9-19
g
19-39
19-199
10
30 45 45
30 30
45-150 20-55
10
1.5
10
1.5
350 385 385 350
50 50 50
40 40
9-22
3
.3
9-22
3
2N2904 2N2904 2N2904 2N2904
385 385 350 385
50 50 30 50
35 35
18-44 18-44
30
2N2KM
385 350 385 150
50 45 50 45
30
500
45 45 45 45
150
10 10
39 9
.3
5 5
18
3
.5
10
3
.5
10
3648
3
.6
15
3648
3
.6
15
35
150
500 150
•
36
9
30
45
Texas INCORPORATED Instruments POST OFFICE BOX 0O12
MM (MHi)
DALLAS. TEXAS 73232
1
5
1
5
3-1
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM Tl
TYPI
e
g
NUMBER
I
REPLACEMENT OR NEAREST EQUIVALENT
VCBO
VCEO
(mW)
(V)
(V)
45 40 45 45
45 60
TA -2S»C
MM
MIN
(MHi)
5
«0 45 45 45
60
1
5
1
5
1W
45 45 45 55
30 30 30 55
1W 1W 1W 1W
60 85 85 125
60
25
10
85 85
25
10
1W 1W 1W
125 60 85 85
125
25
10
60 60 65 25
60 60 65
GP GP GP GP
2N335A 2N336 2N336A 2N337
500
2N336A 2N337
NPN NPN NPN NPN
2N337A 2N33S 2N338A 2N339
NPN NPN NPN NPN
GP GP OP GP
2N337 2N33S 2N338A 2N339
500
2N339A 2N340 2N340A
NPN NPN NPN NPN
GP GP GP GP
2N339 2N340 2N340
NPN NPN NPN NPN
GP GP GP GP
2N341A 2N342 2N342A 2N3428
2N343 2N343A 2N343B 2N354
NPN NPN NPN
GP GP GP GP
2N343 2N343 2N343 2N2906
750 150
2N355 2N470
PNP
2N471A
NPN NPN NPN
GP GP GP GP
2N2906 2N2217 2N2217 2N2217
150 200 200 200
2N472 2N472A 2N473 2N474
NPN NPN NPN NPN
GP GP GP GP
2N2217 2N2217 2N2217 2N2217
2N474A 2N475 2N475A 2N476
NPN NPN NPN NPN
GP GP GP GP
2N477 2N478 2N479 2N479A
NPN NPN NPN NPN
GP GP GP GP
2N471
lc
1mA)
(V)
1
2N335I 2N336
PNP
MAX •
45
500 500
2N342A 2N3428
*C
(mA)
5 5
2N334A 2N334A 2N335 2N335A
2N342
MAX O
»T
kHz
1
GP GP GP GP
2N341
•
VcE(tot) 1
MIN
•tc-m"c
NPN NPN NPN NPN
2N34U
hf.
hfE
2N334A 2N334B 2N335 2N335A
2N341
3-2
I
ELECTRICAL CHARACTERISTICS
RATINGS
PT
150 500
150
500 125
.
125
500
750
1W 1W
45 30
1
20-55
20-55
10
45-150 45-150
10
19
39
10
85
60 85 85
10
9
28 9 .15
5 5 5 5
15
1.5
30 30
30 30
1
200 200 200 200
45 45
45 45
1.5
15
15
1.5
5
30
30
1.5
5
2N2217 2N2217 2N2217 2N2217
200 200 200 200
30 45 45
30 45 45
1.5
15
15
1.5
5
2N2217 2N221S 2N2217 2N2217
200 200 200 200
30
30
1.5
15
15
1.5
5 5
30 30
30 30
1.5
Instruments Texas INCORPORATED •
37
10
15
POST OFFICE BOX S012
18
DALLAS. TEXAS 75222
1
1
1
1
1
5
5
5 5 5
5 5
9 10
10 10
8 8 8
10 10 20 20
8 8
20 20 20 30
8 8
30 40 40 40
8 8
8 12 12
20
20 20
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM
RATINGS
ELECTRICAL CHARACTERISTICS
1*
*T
Tl
REPLACEMENT
OtMAMST MUVAUNT
NUMBER
s
2N480 2N480A 2N4B9 2N489A
NPN NPN
OP GP
P-N
UJ
P-N
UJ
2N4S9B 2N490 2N49QA 2N490B
P-N
UJ
P-N
UJ
P-N
UJ
P-N
2N491
2N491A 2N491B 2N492
veto
(mW)
(V)
(V)
200 200
45 45
•
»T
1 ktfa
MM
•TC -2»°C
!
vCI(iat)
•w
Vco
U-2S-C
MAX *
lc
1mA)
2N2217 2N2217 2N4I9 2N489A
SK UNUUNCTK3N INTERCHANGEAMUTY UST SK UNIJUNCTION INTERCHANOEANUTY UST
UJ
2N489B 2N490 2N490A 2N490B
UNUUNCTION SH UNUUNCTION SEE UNUUNCTION SEE UNUUNCTION
P-N
UJ
2N491
SH UNUUNCTION
P-N
UJ
P-N
UJ
P-N
UJ
2N491A 2N491B 2N492
P-N
UJ
P-N
UJ
P-N P-N
45 45
MM
MAX IV)
1.5 1
(mA) 5 5
tVUN
(MH>)
40 40
20 20
i
SEE
INTEItCHANGEAMUTY
LIST
tNTERCHANGEAMUTY 1ST INTERCHANGEAMUTY UST
WTERCHANGEAMUTY UST i
INTERCHANOEAMUTY SEE UNUUNCTION INTERCHANGEAMUTY SEE UNUUNCTION INTERCHANGEAMUTY SEE UNUUNCTION INTERCHANGEAMUTY
UST UST UST UST
i
2N492A 2N492B 2N493 2N493A 2N493B 2N494 2N494A 2N494B n
1
SK UNUUNCTION
UJ UJ
2N492A 2N492B 2N493 2N493A
INTERCHANGEAMUTY SEE UNUUNCTION INTERCHANGEAMUTY SEE UNIJUNCTION tNTERCHANGEAMUTY SEE UNIJUNCTION INTERCHANGEAMUTY
UST UST UST UST
P-N
UJ
2N493B
P-N
UJ
UNUUNCTION SEE UNUUNCTION SK UNUUNCTION SK UNUUNCTION
INTERCHANGEAMUTY UST INTERCHANGEAMUTY UST
1
P-N
UJ
P-N
UJ
P-N
UJ
PNP PNP
sw sw
NPN
GP
2N2944 2N2944 2N2102
2N541
NPN NPN NPN NPN
GP GP GP GP
2N54IA 2N542 2N542A 2N543
NPN NPN NPN NPN
2N543A 2NS45 2N546 2N547 2N548 2N549 2N550
n iili nn
2N497A 2N498 2N498A
2NS51
SEE
INTERCHANGEABILITY UST
INTERCHANGEAMUTY UST
SEE UNUUNCTION INTERO ANGEAMUTY LIST 150 25 150 10 15-
15 15
•4W
60
60
12-36
2N2102 2N3036 2N3036 2N2218
•5W •4W •5W
60 100 100 15
60
12-36
200
100 100
12-36
200 200
GP GP GP GP
2N221S 2N2219 2N2219 2N2218
200 200 200 200
15
15
30 30 50
30 50
NPN NPN NPN NPN
GP GP GP GP
2N2218 2N2102 2N2102 2N2102
•5W •5W *5W
45 60 30 60
45 60 30 60
NPN NPN NPN NPN
GP GP GP GP
2N2102 2N2270 2N2270 2N2270
*5W •5W •SW •5W
30 60 30 60
30 60 30 60
200
200
12-36
5
9
7.2
1.5
5
SO
10
5
80 80 80 80
8 10 10 10
80
10
200
1
1.5 1
80-
1
1.5
1
1540 15-80
20-80
2040 2040 20-80 20-80
Texas INCORPORATED Instruments POST OFFICE BOX 5012
.15
DALLAS. TEXAS 75222
500 500 500
5 3
500 200 200 50
3
5
4 4 2
5 5 5 5 500 500 500
500 200 200 50
4 4 4 4 3
3-3
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM
£
s
NUMMR
1
3-4
1 ^
REPLACEMENT Oft NEAREST EQUIVALENT
A -2S°C
T
1
MM MAX • (V)
(V)
8
200 200 150
1.5
150
1.5
150 150
15
40 40
150 150 150 150
1.5
5
150 150 150 150
25 15 35
40 50 40 50
5
•4W •5W
30-90
200 200
30-90
GP GP
2N657 2N6S7A 2N696 2N696A
NPN NPN NPN NPN
OP GP GP GP
2N3036 2N3036 2N696 2N696
•4W •5W
100 100
100 100
600 800
60 60
35
2040 2040
2N697 2N697A 2N698 2N699
NPN NPN NPN NPN
GP GP GP GP
2N697 2N697 2N698 2N699
600 800 800 400
60 60 120 120
35
40-120 40-120
2N699A 2N699B 2N702 2N703
NPN NPN NPN NPN
OP GP GP GP
2N699 2N699 2N2220
800 870 300 300
120 120 25 25
2N706 2N706A 2N706S 2N706C
NPN NPN NPN NPN
SW SW SW SW
300 300 300 360
25 25 25 40
2N707 2N707A 2N708 2N708A
NPN NPN NPN NPN
RF
300 500 360 360
56 70 40 50
2N709 2N709A 2N715 2N716
NPN NPN NPN NPN
SW SW
15
6
20-120
15
6
30-90
2N4S75 2N4875
50 70
35
10-50
RF
300 300 500 500
40
10-50
2N717 2N718 2N71SA 2N719
NPN NPN NPN NPN
GP GP GP GP
2N717 2N71S 2N718A 2N719
400 400 500 400
60 60 75 120
2N719A 2N720 2N720A
NPN NPN NPN
2N719A 2N720 2N720A
2N721
PNP
GP GP GP GP
500 400 500 400
120 120 120 50
2N721
.3
3648
2N2432 2N3036 2N3036
RF
.4
30 30 60 60
NPN NPN NPN NPN
GP
2N622 2N656 2N656A
SW SW
3
10 8 8
50 SO 60 60
2N62I
175
RF
50
18-44
500 175
2N2221
2 .5
30 60 50 50
50 100 5 5
•5W
175 385
20-
9-22
30-90
30-90
2040 40-120 40-120 40-120
25 25
2040 40-100 20-
2040 2040 2040
40
*
1.5
1.2
5
150
1.2
50
.5
10 10
.5
.15
70 300 300
.3
3
.3
3
1.2
15 15
600 800 70 70
150 150 150 150
40 50 60 40
A
9-
10
.6
9-50
10 10 10
.6
2040
2040 2040 40-120 40-120 20-45
DALLAS, TSXAS 75212
70
10 10 10 10
.6
.4
40-120 40-120
50 60 70
200 200 200 200
.6
10 10 15 15
35 35
10 10 10 10
10 10 10
Instruments Texas INCORPORATED POST OFFICE SOX S013
150 150 10 10
.5
10
30-120 40-120
MM
MM
00
20-80
GP GP GP GP
"C
1MH.)
30 60 40 35
NPN NPN NPN NPN
MAX •
kHz
(mA)
(mA)
2N552 2N560 2N6I9 2N620
SW
>C
r
•
VdO *CW
C
(mW) 2N2270 2N1893
vCE(irf)
hff
•TC -2S
CHARACTERISTICS •*.
*T
TI
TYPE
EUCmlCM
RATINGS
.4
1.2
150 150 150 150
1.5
150 150 150 150
1.2
50
15
5
150 150 150
35 30
1.5 1.5
5
5 1.5
30 15
15
40 50 50 50
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM TYPE
£
NUMBER
s
I
Tl
s
REPLACEMENT OR NEAREST EQUIVALENT
*
PNP PNP PNP PNP
GP OP GP
2N727 2N728 2N729 2N730
PNP
SW
NPN NPN NPN NPN NPN NPN NPN
2N731
2N734 2N734A 2N735
2N735A 2N736 2N736A 2N736B
SW
ELECTRICAL CHARACTERISTICS hf.
fE
^-as^c
VCBO
2N721
2N722 2N722 2N726
1
MIN
(mW|
f.
vCBO
TA -25°C
MIN
2N1641
2N1642 2N1643 2N1644 2N1654
2N1655 2N1656 2N1663 2N1671
(V)
PNP
sw
100
10
NPN NPN NPN
GP GP GP
2N1613 2N1613 2N2243
800
IW IW
75 75 120
NPN
GP GP
TIS101
SW SW
600 250 250 250
100 50 30 30
PNP PNP
SW SW
250 250
NPN PNP
GP GP
2N2218 2N3495
30 25 60 100
PNP PNP
GP GP
2N3495 2N3495
NPN
SW
P-N
UJ
2N1671
P-N
UJ
2N1671A 2N1671B 2N2218
PNP PNP PNP
2N2904
•«
vCEO
•
VCEfxrtl 1
(mW)
2N1615 2N1623 2N1640
ELECTRICAL CHARACTERISTICS
•TC = 25°C
5 2N1608 2N1613 2N1613A 2N1613B
RATINGS
*T
Tl
*2W 250
MAX «
(V)
6-30
40-120 40-120 40-120
100 20
25-
9-40
15 150 150 150
.15 1.5 1
.2
5
1
.3
6-
.1
,1
15-
.1
40-120 20-45
MAX • (V)
5
10-
10-25
80
!C
|mA)
2N3563 2N3564 2N3565 2N3566
RF
•
VcE(Mt)
>>FE
25 30
150400 150400
80 80 80 30
40 60 40
40-120 40-120 100-300
15
20-150
25 25
15
20-200
13
20-300
8 15 1
10
150 150 150 5
MAX • (V)
.3
.35 1
.25 .25 .35
'C
»T
Ufc
MIN
MIN (MHi)
(mA)
100
600 400 40 40
150 150 150
60 60 60
20
20 20
1
5 5
20
150
20 20
150 100
SEE FET INTERCHANGEABILITY LIST
SEE FET INTERCHANGEABILITY LIST |
SW FE
GP
SW
RF
2N3575 2N3576 2N2608 2N3799
SEE FET INTERCHANGEABILITY LIST 15 40-120 20 360
10
1
.5
5
30
80
60-240
1
.5
5
50-150
.1
.5
5
100-300
.1
.5
5
60 50 100
80 30 30
10
125
60 50 50 45
60 40 40 45
300 200
60 30
45
80-500
1
15
20-150
3
2N3799 2N3799 2N379? 3N108
400 400 400
2N2640 2N4252 3N155
400
.15
|
SEE FET INTERCHANGEABILITY LIST 30-120 60 60 400
.1
1
40
80 850
10
SEE FET INTERCHANGEABILITY LIST 1 1
SW
RF
175 175
10
.21
3
50
.5
50
40
1.3G 150
.5
200 150 200
.25
50 50 50 50
80 40 80
30-
50 50 50 50
100-
100-300 50-150 100-300
•
.5
100
50
.25
50
150
30-120
10
.16
10
30-120 40-120
10 150
.2
.22
10 150
500 500 250
45 30 45
40-120 100-300
60
100-300
150 150 150 150
150 150 150 150
250 250 200 200
100-300
Instruments Texas INCORPORATED POST OFFICE BOX SO 12
.5
DALLAS, TEXAS 78232
.22 .22 .4 .4
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
MAXIMUM
I
TYPI
MPUCHMNT
NUM1ER
OR NEAREST
QIHVAUNT
1
UCTMCAl CHARACTERISTICS
RATINOS
PT
Tl
vCBO
TA -25°C
MM
•TC -2S°C
MAX o
30-120 25-150 20-
30 150 150 10
500 500
1.2
8 8
.6
.6
10 10
50
.75
250
150 150 150
.5
150 150 150
300 60 60 200
2N5058
•4W
2N3660
PNP PNP
OP GP
2N4030 2N4030
*JW •SW
40 60
30 50
25-100 25-100
NPN NPN
RF
TIS62
18
12
20-
RF
TIS62
200 200
30
12
20-
2N3664 2N3665 2N3666
NPN NPN NPN
RF
•5W *5W *5W
60 120 120
2N3671
PNP
OP
2N2905
600
60
60 80 80 50
2N3672 2N3673 2N3677 2N3678
PNP PNP PNP
GP GP GP
400 350 400 800
60 60 30
NPN
2N2907 2N34S6A 2N2944 2N2218A
2N3679 2N3680 2N3681 2N36S2
P-N
UJ
NPN NPN NPN
DU
2N3683 2N3684 2N3685 2N3686
NPN
RF
NCH NCH NCH
FE
2N3570 2N3822 2N382I
SEE FET INTERCHANGEASIU TYU.ST SEE PET INTERCHANGEASIUTYLIST
FE
2N3821
SEE FET INTERCHANGEASIUTYLIST
2N3687 2N36S8 2N3689 2N3690
NCH NPN NPN NPN
2N3691 2N3692 2N3693 2N3694
NPN NPN NPN NPN
2N3695 2N3696 2N3697 2N3498
PCH PCH PCH PCH
FE
2N3700
NPN NPN
GP OP OP GP
2N3701 2N3702 2N3703
PNP PNP
8-80
40-120 100-300 75-225 75-225
.3
.25 .25
1.2
.5 .4
(mA) 30 10 10
(MHx)
20 20 20
500 500
350 350 450 50 25 25 700 700
75-225
150 150
.4
150 150
200 200
40-120
150
.4
150
250
.4
5
300 200 360
50 7
150400
.01
.7
10
10
20-220
2
.37
4
40
15
40-120
200
30
12
20-150
60
1.3G
10
300 20 45
8
30
to
60 600
SEE FET INTERCHANGEASIU nr list
RF
TIS84
RF
TIS84
RF
TIS84
OP OP
TB99
RF
2N4994 2N4995
FE
75
50 50 20 55
30-120
(V)
SEE UNIJUNCTION INTERCh ANOEA8IUTYU ST
2N3680 2N3570 2N918
FE
RF
MM
10 IS 170
OP
FE
MM
IS
(mA)
40 40 40 220
RF
>C
200 400 400
(V)
A5T3903
RF
MAX •
(V)
SW sw SW
SW
k:
kHi
(mW)
NPN NPN NPN NPN
SW SW
• 1
2N3646 2N3647 2N3648 2N3659
2N3661 2N3662 2N3663
vei(«*i
Nt Veto
TIS98
2N3329 2N3329
FE
200 200 200
40 40 40
40 40 40
200 200 200 200
35 35 45
25 25 45
40-
10
45
45
100-
10
30-
30-
4 4 4
40-
10
.7
100-
10
.7
30-
400 400 400 10 10
40 100
200 200 200 200
150 150
SO 30
100
SEE PET INTERCHANOEASH ITYUST SEE PET INTERCHANOEASIUITYLIST SEE PET INTERCHANOEASIUTYIIST SEE FET INTERCHANGEAilt TYLIST
FE
2N720A 2N720A 2N3702 2N3703
500 500 360 360
140 140
40 50
80 80 25 30
100-300
40-120 60-300 30-150
Texas INCORPORATED Instruments POST OPPICI BOX S013
•
DALLAS. TEXAS 7S2S2
150 150
.2
50 50
.25
.2
.25
50 50
80 100 100
3-35
2
1
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM TYK
P
I
NUMBER
REPLACEMENT OK NEAREST EQUIVALENT
I*
A -25°C
T
hK veto
1
MIN
(mW)
(V)
MAX •
«C
(mA)
(V)
MAX • IV)
50 50 50
.6
.1
1
2N3704 2N3705 2N3706 2N3707
NPN NPN NPN NPN
GP GP GP GP
2N3704 2N3705 2N3706 2N3707
360 360 360 360
50 50 40 30
30 30 20 30
100-300
2N3708 2N3709 2N3710 2N3711
NPN NPN NPN NPN
GP GP GP GP
2N3708 2N3709 2N3710 2N371
360 360 360 360
30 30 30 30
30 30 30 30
45-660 45-165 90-330 180-660
2N3712 2N3721 2N3722 2N3723
NPN NPN NPN NPN
GP GP
2N3725
150 18 80 100
150 18
SW SW
800 360 800 800
30-150
2N3711
60 80
40-150 40-150
2N3724 2N3724A 2N3725 2N3725A
NPN NPN NPN NPN
SW SW SW SW
2N3724 2N3724A 2N3725 2N3725A
800
30 30 50 50
60-150 60-150
IW
50 50 80 80
2N3726 2N3727 2N3728 2N3729
PNP PNP
2N3810 2N3810 2N2060 2N2060
400 400 450 430
45 45 60 60
45 45 30 30
135-350
1
.25
135-350
1
.25
NPN NPN
DU DU DU DU
2N3734 2N3734A 2N3735 2N3735A
NPN NPN NPN NPN
SW SW SW SW
2N3734 2N3734 2N3735 2N373S
IW IW IW IW
50 50 75 75
30 30 50 50
30-120
2N3736 2N3736A 2N3737 2N3737A
NPN NPN NPN NPN
SW SW SW SW
500 500 500 500
50 50 75 75
30 30 50 50
30-120 30-120
2N3742 2N3743 2N3762 2N3763
NPN
GP GP
2N5058
SW SW
2N3244 2N3245
IW IW IW IW
300 300 40 60
2N3764 2N3765 2N3774 2N3775
PNP PNP PNP PNP
GP GP GP GP
2N3486 2N3486A 2N4030 2N4030
500 500
2N3776 2N3777 2N377S 2N3779
PNP PNP PNP PNP
GP GP GP GP
PNP PNP PNP
1W 800
•
VcE(tat)
VCEO
•T C -2S"C
|
3-3B
UCTMCAl CHARACTERISTICS
RATINGS
h
n
50-150 3O-6O0 100-400
60460
60-150 60-150
.8 1
100 100 100 10
too 100 100 100
2
50
25
.22
100 10
300 300
100 100 100 100
300 300 300 300
1
1
1
.25
.2 .2
.26 .26
50 50
135 135
150 150
50 50
.22
1A 1A 1A 1A
.2
10
.9
IA 10 IA
.2
10
.9
IA
2040
1A IA 1A IA
300 300 40 60
20-200 25-250 30-120
30 30 IA
.1
2040
IA
.1
40 60
30-120
60
2040 2040 2040
IA IA
C
(V)
40-
FE
FT
"C
l«»A)
.2
.5
.2
1
INTERCHANGEABILITY UST I
1
2N5201 2N5208 2N5209
3-50
OP OP OP
RF RF
2N5246 A7TS172 2N5550 2N5550
2N5550 2N3572 2N3572
RF
RF
FE
FE FE
PNP
RF
NPN
OP
2N956 2N5059
SEE FET INTERCHANGEABILITY LIST 100-500 25 25 360
360 200
90 130
200 200 180 180
130 20 30 45
180
35
500 500
18
IW 300
40400
100
55-160
800
IW
100
.95
10 10 10
.95
10
3
.4
10
140 25
12
140-300 25-250
10
15
20-200
2
27-
1
100
27-
75-
10
120 120
10-
50 50
10-
.95
900 650 400
400 62 50
10
.25
10
25-
.5
150
15-
1A
1
30-
55
70
10 10 150
25-
40
1
18
10 25 60 60
IW 2N2537 2N3724
75
.3
1A
SEE FET INTERCHANGEABILITY LIST
2N5545 2N5546 2N5547
2N5209
SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEABILITY LIST
20 20 30 50
300 300 310 310
25
50-150 75-150 20-120
50
100-300
20 20
Instruments Texas INCORPORATED POST OFFIC1 BOX MIS
•
DALLAS, TEXAS 78282
10 10 2
.5 .5
50 50
.1
.7
10
900
150
I.IO 300 30
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
MAXIMUM
I
TYPI
RATINOf
BJCTRKAl CHARACTERISTICS
n MPIACWWNT
OtMAMST
NUMIHt
tOUIVAUNT
i
1* Veto
TA -25°C
1
MM MAX •
•Te -2»'C
|mW|
(V)
50 20
(V)
2N5222 2N5223 2N5224 2N522S
NPN NPN NPN NPN
2N5226 2N5227 2N5228 2N5230
PNP PNP PNP PNP
2N5231 2N5232
PNP
sw
2N2946A
NPN NPN NPN
OP OP OP
TIS95
2N5234 2N5235 2N5234 2N5242
NPN NPN NPN
GP GP
TIS94
Iff
PNP
2N5243 2N5244 2N5245 2N5246
2N5247 2N5248 2N5249 2N5249A
NCH NCH NPN NPN
OP OP
TIS94
2N5252 2N5253 2N5262 2N5265
NPN NPN NPN
GP OP GP
2N5058
PCH
FE
SEE
2N5266
PCH PCH PCH PCH
FE
FE
SEE SEE SEE SEE
PCH
FE
SEE FET INTERCHANGEAMU rYUST
NPN NPN NCH
SW SW
2N5232A 2N5233
2N5210 2N3219 2N5220 2N5221
310 310 310 310
RF
OP
2N5222 2N5223 2N3903 2N5225
OP OP
2N5226 2N5227
50
15
15 15
15
15
310 310 310 310
20 25 25 25
15
310 310 310 400
ic
MAX •
(mA) (V)
NPN NPN NPN
OP OP OP OP
•
Veto
2N5210 2N5219 2N5220 2N5221
PNP
VCC(Mt)
kpi
200-600 35-500
ic
MM
(mA)
.1
.7
2
.4
30400 30400
50 50
.5
10 10 150
.5
150
50-1500
*1
Ufa
mm (MHi)
250 35 30 30
30 150 100 100
20 50
450
20
50400
12
40-400
4 2 10
.35
4 10 10
25
30-600
50
.8
100
30
150 250 50
25 30 5 30
25 30 5 20
30400
50
.8
50-700
2 10
.4
100 10 10
30 50
100
30-
50-
.1
400 360 360 330
50 70 70 80
30 50 50 60
50-
.1
80 80
60 60 20
SW
330 330 600 500
PNP PNP
sw sw
500 360
NCH NCH
FE
OP
sw
sw sw
FE
2N2945A
TIS95 TIS95
2N5245 2N5246
40
250400 250400 100400
1
.7
.4
300
2
.125
2
.125
10 10
250 250
10
.125
10
100
250400 400400
10 10
.125
10 10
250 400
30-120
20
25-100
50 500
30
25-100
40 150-300 SEE FT INTERCHANGEASIU nrusT SEE FET INTERCHANGEAMllTYUST
.125
50
.2
50
500
.2
100
170
500
.2
10
.12
100 10
450
400400 400400
2
.125
10
2
.125
10
300 300 40-120 300 80-250 300 75 50 35INTERCHANOEASUr TUST
100 100 100
.8
10
170
1
2N526* 2N5268 2N5269
2N5270 2N5272 2N5276 2N5277
FE
FE
FE FE
FE
2N5247 2N5248 1IS94
SEE PET
INTERCHANGEAMUTYUST
SEE FET INTERCHANGEABtU IYUST
70 70
360 360
•7W *7W
1W FT FET FET FET FET
50 50
400 400
200 200 1A
30 30
.25
10
.2
20
500 600
INTERCHANGEAMUTYUST INTERCHANGEAMLTTYUST INTERCHANGEAMLTTYUST INTERCHANGEAMU TYUST
360 360
40
20
10O400
25
15
30-90
1
SEE FET INTERCHANGEAMU TYUST
Texas INCORPORATED Instruments POST OFFICE BOX
801.3
DALLAS, TBXAS 7BS22
3-51
1
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
MAXIMUM
NUMMt
g
i
e
1
kfe
*T
Tl
TYPI
HfCRICAI. CHARACnttSTKS
RATINGS
REPLACEMENT OK NEAREST
TA -25»C
vCSO
V«o
(V)
(V)
1
MM MAX •
•TC -25°C
SEE FET INTERCHANGEABIUTY UST 40-160 400 300 •SW
NCH NPN PNP PNP
GP GP GP
2N5292 2N530S 2N5306 2N5306A
PNP
SW
•1W
NPN NPN NPN
DA DA DA
2N5307 2N5308 2N5308 2N5309
NPN NPN NPN NPN
DA DA DA GP
2N5310
NPN NPN
GP GP
PNP PNP
GP
2N3703
2N5355 2N5356 2N5358 2N5359
PNP PNP
GP GP
2N3702
NCH NCH
FE FE
2N5358 2N5359
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST
2N5360
NCH NCH NCH NCH
FE
2N5360
SEE FET INTERCHANGEABIUTY UST
FE
2N5361 2N5362 2N5363
SEE FET INTERCHANGEABIUTY UST
2N5364 2N5365 2N5366 2N5367
NCH
FE
PNP PNP PNP
GP GP GP
2N5368 2N5369 2N5370 2NS371
NPN NPN NPN NPN
GP GP GP GP
TIS110
2N5372 2N5373 2N5374 2N5375
PNP PNP PNP PNP
2N5376 2NS377 2N5378 2NS379
NPN NPN
FE
•2W *2W
ic
(mA)
2N5278 2N5279 2N5281 2N52B2
2N5354
•t
kHx
EQUIVAUNT (mW)
2N53I 2N5332
•
VCI(Mt)
hfi
MAX • IV)
*C
MM
.5
50
15
1
2
1
2
10 10
20 20
20
175 325
150 300
20-200 20-200
12
1.4
2N5525 2N5525
25 25 25
30 2
10
25 25 25
40-100 2000-20K 7K-70K 7K-70K
.12
400 400 400
2
1.4
2
1.4
200 200 200
2000 7K 7K
400 400 400 360
40 40 40 70
40 40 40 50
2K-20K 7K-70K
2 2 2
1.4
2N5525 2N5525 2N3710
200 200 200
2K 7K 7K 66
360 330 360 360
70 70 20
50 50
100-300 250-500
12
2040
25
25
40-120
50
.25
360 360
25 25
25 25
100-300
50 50
.25
250-500
50 50 50
.25
150 150 150 150
.3
150 150 150 150
.3
.01
.2
.01
.2
.01
.2
.01
.2
2N3636
2N3707 TIS94
SW
7K-70K 60-120
MM (MHi)
(mA)
1.4 1.4
.01
.125
10
.01
.125
.01
.125
10 10
1
.2
.25
800
110
20 50
32
50 50
80 200
50 50 50
32 80
600
1
2N5361 2N5362 2N5363
FE FE
SEE SEE
FT INTERCHANGEABIUTY UST FT INTERCHANGEABIUTY LIST I 1
3-52
PNP PNP
2N5364 2N3703 2N3702
SEE FET INTERCHANGEABIUTY UST
360 360 360
40 40 40
40 40 40
TIS1U
360 360 360 360
40 40 40 40
30 30 30 30
GP GP GP GP
2N5448 A5T2907 A5T2907 2N5447
360 360 360 360
60 60 60 40
30 30 30 30
200-400 40-400
GP GP GP GP
TIS97
360 360 360 360
60 60 40 40
30 30 30 30
100-500 40-200 100-500 40-200
TIS111
TIS110
TIS98
A5T4058 A5T4060
40-120 100-300
250-500 60-200 100-300
200400 60400 40-120 100-300
Instruments Texas INCORPORATED POST OPFICe BOX 5012
•
DALLAS, TEXAS 7B222
.25 .25
.3 .3 .3
.3 .3 .3
200
150 150 150 150
250 250 250 250
150 150 150 150
150 150 150 150
10 10 10 10
120 100 120 100
300 300 200 200
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM TYPE
i
£
NUMBER
I I
2N5380 2N5381 2N5382 2NS383
NPN NPN PNP PNP
RATINGS
ELECTRICAL CHARACTERISTICS
"1
Tl
REPLACEMENT OK NEAREST EQUIVALENT
TA -25°C
vCBO
A5T3903 A5T3904 A5T3905 A5T3906
2N5359 2NS361 2N5362 2N5362
MIN
(mW)
(V)
310 310 310 310
60 60 40 40
MAX
•
(V)
40 40 40 40
250 300 200 250
50-150
10 10
.25 .25
10
NCH NCH NCH NCH
FE
FE
2N5399 2N5400
NPN
SW
2N5401
PNP PNP
GP GP
2N5413
NPN
SW
2N5414 2N5415 2N5416 2N5417
NPN
SW
PNP PNP
GP GP
NPN
SW
2N5418 2N5419 2N5420 2N5431
NPN NPN NPN
GP GP GP
P-N
UJ
SEE UNIJUNCTION INTERCHANGEABIUTY LIST
2N5432 2N5433 2N5434 2NS447
NCH NCH NCH
FE
SEE FET INTERCHANGEABIUTY LIST SEE FET INTERCHANGEABILITY UST
PNP
GP
2N5447
2N5448 2N5449 2N5450 2NS451
PNP
GP GP GP GP
2N5448 2N5449 2N5450 2N5451
FE
2N5545 2N5545 2N5546
MM (MHO
10 10 10
100-300
MM
|mA)
.2
2N5395 2N5396 2N5397 2NS398
FE
"C
f|
kHz
(V)
10 10
FE
FE
MAX •
50-150 100-300
NCH NCH NCH NCH
FE
"c
(mA)
2N5393 2N5394
2N5391 2N5392
• 1
•Tc-^'c
SW sw SW sw
W.
vCElHrt1
•FE
vCEO
.2
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY UST
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABIUTY UST
1
1
FE FE
2N5362 2N5363 2N5397 2N5398
2NS400 2N5401 2N3724
2N3725 2N3636
2N3705 2N3704 2N3706
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST
360 310 310
25 130 160
15 120 150
60-240
1W
60
40
25-100
1W 1W 1W
50 200 300 35
25-100
2A
30-150 30-120
50 50
500
80 200 350 40
80-250
150
.55
150
400 400 400
25 25 25
25 25 25
40-120
50 50 50
.25
.25
50 50 50
50
.25
50
100
50 50 50 50
.25
50
.6
1
100 100 100
100 100 100 100
30
.5
300
450
30
.55
300
450
30-90 40-180
100-300
250-500
.2
20
.2
10
10
.2
2A
.25
10 150
.25
150
1
10
30 40
600 100 100
15 15
.25
250
1
NPN NPN NPN
FE FE
2N5452 2N5453 2N5454 2N54S5
NCH NCH NCH
FE
PNP
SW
2NS456 2NS457 2N5458 2N5459
PNP
SW
NCH NCH NCH
FE
FE
SEE FET INTERCHANGEABIUTY LIST 360 40 25 60-300
360 360 360 360
50 50 50 40
30 30 30 20
30-150 100-300 50-150 30-600
.8
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST 340 30-120 15 15
340
25
25
30-120
FE
2N5953 2N5952
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABILITY UST
FE
2NS9S1
SEE FET INTERCHANGEABIUTY UST i
Texas INCORPORATED Instruments POST OFFICE BOX 5012
.
DALLAS, TEXAS 75222
3-53
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF REGISTERED TYPES
MAXIMUM fj
Tl
TYPE
fc
2
NUMBER
i "
ELECTRICAL CHARACTERISTICS
RATINGS
REPLACEMENT Oft NEAREST EQUIVALENT
hf.
TA -2S°C
vCEO
(V)
(V)
MIN
•Tc-25-C
(mW)
• 1
MAX *
lc
MAX *
("A) (V)
2N5460 2N5461 2N5462 2N5463
PCH PCH PCH PCH
FE
2N5460
SEE FET INTERCHANGEABIUTY LIST
FE
2N5461 2N5462
SEE FET INTERCHANGEABIUTY UST
FE
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST
2N5464 2N5465
FE
SEE FET INTERCHANGEABIUTY UST
FE
SEE FET INTERCHANGEABIUTY UST
FE
2N5472
PCH PCH PCH PCH
FE
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST
2NJ473 2N5474 2N5475 2N5476
PCH PCH PCH PCH
FE
SEE FET INTERCHANGEABIUTY UST
FE
FE
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST
FE
SEE FET INTERCHANGEABIUTY LIST
2N5484 2N5485 2N54S6 2NJ505
NCH NCH NCH
FE
PCH
FE
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST
2N5306 2N5J07 2N5508 2N5509
PCH PCH PCH PCH
FE
SEE FET INTERCHANGEABIUTY LIST
2N5514 2N5S1S 2N5516 2NJS17 2N5518 2N5519
FE
V«(»l)
••FE
vCBO
lc
(mA)
»T
kHz
MM
MM (MHz)
| 1
2N5471
1 1
I 1
FE FE
2N5246 2N5245 2N5247
SEE FET INTERCHANGEABIUTY LIST SEE FET INTERCHANGEABIUTY UST
I 1
FE
SEE FET INTERCHANGEABIUTY LIST
FE
SEE FET INTERCHANGEABIUTY UST
FE
SEE FET INTERCHANGEABIUTY LIST
PCH PCH PCH
FE
SEE FET INTERCHANGEABIUTY LIST
NCH
FE
NCH NCH NCH NCH
FE
FE
2NSS4S
SEE FET INTERCHANGEABIUTY UST
FE
2N5346 2N5547 2N504J 2N5525
SEE FET INTERCHANGEABIUTY LIST
2N5525
NCH NCH NCH NPN
2N5526 2NJ543 2NJ544 2NSJ45
NPN NCH NCH NCH
DA
2N5546 2N5547 2N5S48 2N5549
NCH NCH
FE
| 1
SEE FET INTERCHANGEABIUTY LIST
FE FE
2N5545 2N5546
SEE FET INTERCHANGEABIUTY LIST
2N5S47 2N504S
SEE FET INTERCHANGEABIUTY LIST
SEE FET INTERCHANGEABIUTY UST 1
2NM20 2N3521
FE
SEE FET INTERCHANGEABIUTY LIST SEE FET INTERCHANGEABIUTY UST
FE
1 1
2N5522
2NM23 2NM24
FE FE
DA
FE FE
FE
2N5526 2N6449 2N64J0 2N5545
SEE FET
INTERCHANGEABIUTY UST
SEE FET INTERCHANGEABIUTY UST 5K360 40 30
360
40
30
IK-
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY LIST SEE FET INTERCHANGEABIUTY UST 1 1
FE
PCH
FE
NCH
FE
2N5546 2N5547 2N5549
SEE SEE SEE SEE
INTERCHANGEABIUTY UST FET INTERCHANGEABIUTY LIST FET INTERCHANGEABIUTY LIST FET INTERCHANGEABIUTY UST
FET
1
3-54
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
10
1
50
200
10
1
50
200
TRANSISTOR INTERCHANGEABILITY LIST OF REGISTERED TYPES
MASTER
MAXIMUM RATttWS type
NUMRfR
I 2
£
2
ELECTRICAL CHARACTERISTICS
REPLACEMENT OR NEAREST EQUIVALENT
vCBO
TA -25"C
VCK>
1
MM
(mW)
(V)
NPN NPN NCH NCH
GP GP
2N5556 2N55S7 2N5561 2N5562
NCH NCH NCH NCH
FE
FE
2N5545
2N5563 2N5564 2N5565 2N5566
NCH NCH NCH NCH
FE
2N5547
FE
2N5581 2N5582 2N5583 2N5592
NPN NPN
GP GP
PNP
RF
NCH
FE
SEE FET INTERCHANGEAMUTY UST
2N5593 2N5594 2N5638 2N5639
NCH NCH NCH NCH
FE
SEE SEE SEE SEE
2N5640 2N5647 2N5648 2N5649
FE
re
2N5550 2N5S51 2N5949 2N5362
310 310
140 180
MAX •
(V)
2N5551 2N5555 2NS558
2N5550
vCE(Mt)
•« •Tc-SS^
|
*
h
n
140 1«0
60-250 80-250
>C
MAX • (V)
(mA)
10 10
.15
10 10
150 150 100
.3
»l
MM
"C
(mA)
.15
• Ms
IMHi)
50 50
100 100
SEE FET INTERCHANGEANUTY LIST SEE FET INTERCHANGEA8IUTY LIST 1 1
FE
2N3821 2N5361
FE
SEE FET INTERCHANGEAMUTY LIST SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY UST 1 1
FE
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEAMUTY LIST SEE FET INTERCHANGEAMUTY UST
FE
2N2221A 2N2222A
•2W •2W •5W
75 75
40 40
100-300
30
30
25-100
40-120
.3 .8
150 150 100
250 300 1.3G
1
FE FE
TIS73
FE
TIS74
NCH NCH NCH NCH
FE
TB7S
2N5651 2N5652 2N5653 2N5654
NPN NPN NCH NCH
RF
2NM70
RF
2N3570
FE
TIS74
FE
TIS7S
2N5668 2N5669 2N5670 2N5690
NCH NCH NCH NPN
FE
2N5953 2N5952 2N5950 2N3S70
2N5716 2N5717 2N5718 2N5769
NCH NCH NCH NPN
2K5770
NPN
RF
2N3771
PNP
2N5772 2N5777
NPN NPN
SW SW
FET
INTERCHANGEAMUTY
LIST
FET INTERCHANGEABILITY UST FET
FET
INTERCHANGEAMUTY UST INTERCHANGEAMUTY UST 1 1
FE
SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEAMUTY UST
FE
SEE FET INTERCHANGEAMUTY UST
FE
20 20
150 150
15
30-300 30-300
15
3
2G
3
2G
3
2G
SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEAMUTY UST 1
FE
FE RF
2N5953
SW
DA
SEE FET INTERCHANGEAMUTY LIST 150 20 15 30-300 1
SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST
re FE
FE
SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST
2N4996
SEE FET INTERCHANGEAMUTY UST 625 40 15 40-120
625 625 625 200
10
500
.4
900 850 350
15
20-
15
15
50-120
3 10
.18
10 10
40
15 25
30-120
30
.3
30
25
•
.5
30
2500-
TexasINCORPORATED Instruments POST OFFICE BOX 5012
10
DALLAS. TEXAS 7B232
3-55
1
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM RATINGS TYPS
fc
NUMBER
s
$ £ «A
5
Tl
REPLACEMENT OR NEAREST EQUIVALENT
5
ELECTRICAL CHARACTERISTICS hf.
••t
hFE
TA -M°C
vCBO
«
VCE(sat)
vCEO
1
MIN
•Tc-2S°C
MAX •
"C
(mA)
|mW|
(V)
200 200 200 500
40 25 40 75
40
2500-
25
5000-
40 40
5000-
500 500 500
75
60 60
40 60 60
(V)
2NS778 2N5779 2N5780 2N5793
NPN NPN NPN
NPN
DA DA DA DU
2N5794 2N5795 2N5796 2N5797
NPN NPN NPN
DU DU DU
PCH
FE
SEE FET INTERCHANGEABILITY
2N5798 2N5799 2N5800 2N5801
PCH PCH PCH
FE
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST
NCH
FE
2N4858
SEE FET INTERCHANGEABILITY LIST
2N5802 2N5803 2N5810 2N581
NCH NCH NPN
FE
2N5549 2N5549 A5T2222 A5T2907
SEE FET INTERCHANGEABILITY LIST
2NS812 2N5813 2NS814 2N5815
NPN
2NS8I6 2N58I7 2NS818 2N5819
NPN
2N5820
NPN
2N5821 2N5822 2N5823
PNP PNP
GP GP GP GP
2N5824 2N5825 2N5826 2N5827
NPN NPN NPN NPN
GP GP GP GP
2N5828 2N5829 2N5830
NPN
GP
TIS97
PNP
RF
2N5831
NPN NPN
GP GP
2N4260 A5T2243
2N5832 2N5833 2N5835 2N5836
NPN NPN NPN NPN
GP GP
MAX • (V)
"C
150
.9
300
100-300
150 150 150
.9
1.6
300 500 500
1.6
MIN
MIN (MHi)
(mA)
40-120
40-120 100-300
•Tc-as^
! 3N138 3N139 3N140
ELECTRICAL CHARACTERISTICS
*T
Tl
(V)
(V)
lc
(mAI
MAX « (V)
lc
(mA|
*t
kHx
MM
MM (MHz)
SEE FET INTERCHANGEABIUTY LIST SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST l 1
3N142 3N143 3N145 3N146
NCH NCH
FE
3N201
FE
PCH PCH
FE
3N128 3NI74 3N174
3N147 3N148 3N149 3N150
PCH PCH PCH PCH
FE
3N151 3N1S2
PCH
FE
NCH NCH NCH
FE
FE
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST 1
FE FE FE
3N208 3N208 3N161 3N161
SEE FET INTERCHANGEABIUTY SEE FET INTERCHANGEABIUTY SEE FET INTERCHANGEAMUTY SEE FET INTERCHANGEAMUTY
UST UST UST UST
1
3N153 3N154
FE
FE
3N128 3N153 3N128
SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST 1
3NIM 3N155A 3N156 3N156A
PCH PCH PCH PCH
FE
PCH PCH PCH PCH
FE
FE FE FE
1
3N155 3N1J5A 3N154 3N1S6A
SEE SEE SEE SEE
3N1S7 3N1S7A 3N158 3N158A
SEE FET INTERCHANGEAMUTY LIST SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEAMUTY UST
FET FET
FET
INTERCHANGEAMUTY UST INTERCHANGEAMUTY UST INTERCHANGEAMUTY UST
FET INTERCHANGEABIUTY UST |
3N1 57
3N157A 3N158 3N158A
FE
FE FE
SEE FET
INTERCHANGEAMUTY UST|
3N159 3N160 3N161
3N162
NCH
FE
PCH PCH PCH
FE
3N160
FE
3N161
FE
3N162
FE
3N163 3N164
SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST |
3N163 3N164 3N165
3NtM
PCH PCH PCH PCH
FE FE
SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEAMUTY UST
FE
SEE FET INTERCHANGEAMUTY UST
FE
SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEAMUTY UST
1
3N167 3N168 3N169 3N?70
PCH PCH
NCH NCH
FE
3N171
NCH
FE
3N172 3NI73 3N174
PCH PCH PCH
FE
FE
FE
3N160 3N169 3N1 70
-"1
SEE FET INTERCHANGEAMUTY UST 1 1
FE
3N171 3N161 3N161
FE
3N174
SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEABIUTY UST SEE FET INTERCHANGEAMUTY UST SEE FET INTERCHANGEABIUTY UST
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
3-61
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF REGISTERED TYPES
MAXIMUM
R TYK
fc
g
NUMUI
l
1
ELECTRICAL CHARACTERISTICS
RATINGS
hf.
*T
Tl
REPLACEMENT 0* NEAREST EQUIVALENT
TA -23
,,
C
vCBO
vCEO
(V)
(V)
MIN
•Tc-25°C (mW)
FE FE
3N171
SEE PET INTERCHANGEABILITY LIST
3N175 3N176 3N1 77 3N178
NCH NCH NCH
re
PCH
FE
SEE FET INTERCHANGEABILITY LIST
3NI7? 3NISO
FE
SEE FET INTERCHANGEABILITY LIST
3N182
PCH PCH PCH PCH
3N183 3N184 3N185 3N186 3N188 3N189 3N190
I 1
SEE PET INTERCHANGEABILrTY LIST
FE
SEE FET INTERCHANGEABILITY LIST
FE
SEE FET INTERCHANGEABILITY LIST
PCH PCH PCH PCH
re FE
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST
FE
SEE FET INTERCHANGEABILITY LIST
FE
SEE FET INTERCHANGEABILITY UST
PCH PCH PCH PCH
FE
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST
FE
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST
re
SEE FET INTERCHANGEABILITY UST
3N20I
NCH NCH NCH NCH
3N202 3N203 3N204 3N205
NCH NCH NCH NCH
FE
3N206 3N207 3N208
NCH
FE
PCH PCH
FE
3N21I
3N181
1 1
1 1
3N191
FE FE
| 1
3N192 3N193 3N200
SEE FET INTERCHANGEABILITY UST
FE
3N201 3N201
SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEABILITY LIST
3N202 3N203 3N204 3N205
SEE FET INTERCHANGEABILITY LIST
SEE FET INTERCHANGEABILITY LIST
FE
3N206 3N207 3N208
NCH
FE
3N2U
SEE FET INTERCHANGEABILITY UST
3N212 3N213 3N214 3N215
NCH NCH NCH NCH
FE FE
3N212 3N213
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST
FE
3N2M
SEE FET INTERCHANGEABILITY LIST
FE
3N21S
SEE FET INTERCHANGEABILITY LIST
3N216 3N217
NCH NCH
FE
3N216 3N217
SEE FET INTERCHANGEABILITY LIST
FE
FE
1 1
FE FE FE
SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEABILrTY UST 1 1
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY UST 1 1
1
3-62
FE
SEE FET INTERCHANGEABILITY UST
Instruments Texas INCORPORATED POST OFFICE BOX 5013
MAX
C
1mA)
45 45 45
27-170 70-275 27-90
*7W
30 35 30 65
60
15
30-150
3
20
30-200
2
15
30-150
40
10-
150
1
250
60
40-120 70-350 70-350 35-150
100
.5
500
50 50 50
1.4
150
3
625
1W 1W 1W
40
RC RC RC RC
NPN NPN
2N2270 2N2270 2N4030 2N2270
1W 1W 1W 1W
40 40 40
70-350 40-200 35-200 40-200
50
NPN
GP GP GP GP
RC RC RC RC
NPN NPN NPN NPN
GP GP GP GP
2N5058 2N2270 2N2270 2N5058
1W 1W 1W 1W
300
25-200
20
18
70-350 40-200
50
40-250
20
2N3114 2N2270 2N2102
1W 1W 1W 1W
GP GP GP GP
40354 40355 40360 40361
RC NPN RC NPN RC NPN RC NPN
GP GP GP GP
40362 40366 40367 40385
RC RC RC RC
PNP
NPN NPN NPN
GP GP GP GP
40397 40398 40399 40400
RC NPN RC NPN RC NPN RC NPN
GP GP GP GP
40405 40406 40407 40408
RC NPN RC PNP RC NPN RC NPN
GP GP GP
18
30
35
40 300 175
60 90
25-
10 10
10
10
.5
30-100
.75
450 300
25-100
150
.5
150
25-100
65 140
1
500
150
5
1
1W
5
1
1W 1W
150 70 70
40-200
10
1.4
150
70-350
50
1.4
150
2N4032 2N2102 2N2102
1W 1W 1W 1W
70 65 55 350
35-200 40-120 35-100 40-160
50 150
1.4
150 150
200 20
1.4 .5
200 4
25 25 18
165-600
.25
10
.25
10
.2
5
18
75-300
10 10 10 10
.2
5
300
16
20-
1W 1W 1W
50 50 90
30-200
.1
40-200 40-200
10
2N2222
RF
2N4030 2N2270 2N2102
100
450
500 500 500 500
175-300 165-600
.5
10
10
450 300
40
100
50
2N5059 2N2102 2N2102
2N2222
(MHz)
1
2N2270 2N2270 2N2102
NPN NPN NPN RC NPN
MIN
MIN
15
A5T4026
RC RC RC
(mA)
1
GP GP GP GP
40346 40347 40348 40349
lc
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kHz
1
PNP RC NPN RC NPN RC NPN
PNP
MAX «
h
•
VcE(Mrt)
lA)
SEE FET INTERCHANGEARIUTY LBT SEE KT INTERCHANGEABIUTY LIST SEE FET INTERCHANGEABIUTY LBT 180 45 40-170
FE
RF
60 60
500
H TIS126
40
IW IW
2N2222 2N2222A 2N2222A
RF
35 30 30
IW
2N2222 2N2222
PNP PNP
NPN NPN NCH
(V)
IW
RF
GP
VCEO 1
(mW) RC RC RC RC
vCE(Mtl
>>PE
VCBO
Ta-25°C •TC -25°C
1
40412 40413 40414 40450
ELECTRICAL CHARACTERISTICS
T
Tl
1G 1C
3
50 50 500 500 50
300 1.1
50
2 2
500 500
1
150
1
100
I 1
40559A 40577 40578 40581
RC RC RC RC
NCH NPN NPN NPN
FE
SEE FET INTERCHANGEAMLITY LIST 3W 60 50-275
RF RF
2N3866
•5W
RF
55 45
180
30
10-200
70-275
Texas INCORPORATED Instruments P>OST OFPICK
BOX
SO 12
•
DALLAS, TIXA« 78*32
100
50
250 500
1
346
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES
1LECTRICAI CHARACTERISTICS
MAXIMUM RATINGS
If.
"T
Tl
TYfi
1
NUMBER
j
1 s
REPLACEMENT OR NEAREST EQUIVALENT
1
A -as°c
iw vCtO
vCEO
(V)
(V)
|mW|
1
366
40582 40600 40601 40602
RC NPN RC NCH RC NCH
RF
RC
NCH
FE
40603 40604 40608
RC RC
NCH NCH NPN NPN
FE
RC
PE FE
FE
3N211 3N211 3N211 3N211 3N211
RF
32 75 95 30
70-500
50
50-250
150 150
R(:
40673 4248TP 4274TP 4360TP
RC
Ufa
1
MM (MHt)
135 135 120
200 200 40
20 20
1200
50 50
io 100 150
150 150 10 10
100 100 100 45
10 10 10
45 90 180
200 200
1
1
1
1
1
1
.2
10
50
250 300 200 250
1
A5T3822 A5T3823 A5T3824 A5T3903 A5T3904 A5T3905 A5T3906 A5T4026
A5T4027 A5T4028 A5T4029 A5T4058 A5T4059 A5T4060 A3T4061 A3T4062 A5T4123 A5T4124 A5T4I25 AST4126 A5T4248 AST4249 AJT4230 A5T4260
Tl Tl Tl
Tl Tl
Tl Tl
Tl Tl
Tl Tl Tl
n
PNP PNP PNP PNP
n n
NPN NPN
n
PNP PNP
n n n n n
PNP PNP >NP »NP
FE FE
SW
SEE FET INTERCHANOEAMUTYUST
625
60
40
50-150
10
625 625 625 625
60 40 40 60
40 40 40 60
100-300
10
.2
10
100
50-150
10
.25
100-300 40-120
10 100
.25
10 10
50
OP
A5T3904 A5T3905 A5T3906 A5T4026
.5
500
100
OP OP OP OP
A5T4027 A5T4028 A5T4029 AST4058
625 625 625 625
SO 60 80 30
80 60 80 30
40-120
100 100 100
.5
.5
500 500 500
100 150 150
.7
10
100
OP OP OP OP
A5T40S9 A5T4060 A5T406I A5T4062
625 625 625 625
30 30 30 30
30 30 30 30
.7
10 10 10 10
45 45 90
sw sw sw sw
A5T4123 A5T4124 A5T4125 A5T4126
625 625 625 625
40 30 30 25
30 25 30 25
GP GP GP
A5T4248 A5T4249 A5T4250 A5T4260
625 625 625 200
40 60 40 20
40 60 40
100-300 250-700
sw SW sw
RF
15
100-300 100-300
.
.5
100-400
.1
45460
1
45-165 90-330
1
.7
1
.7
180460
1
.7
50-150
2
.3
120-360 50-150
2 2
.4
120-360
2
.4
50-
30-
TexasINCORPORATED Instruments POST OPFICE BOX 5012
.
DALLA1. TeXAB W222
.3
100
180
50 50 50 50
50 120
100 250
.1
.25
.1
.25
.1
.25
10 10 10
10
.35
10
50 120
50
250 300 200 250
40 40 50 1600
3-67
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF NONREGISTERED TYPES
EUCTRKAL CHARACTERISTICS
MAXIMUM RATWOS
NUMBER
<
i
vCE(Mt)
hpf r
A -25''C
Vcbo
1
MIN
MAX •
MAX •
"C
(mA)
(mW)
(V)
200 625 625 625
20 40 40 80
40 40 50
50-150 100-300 60-400
(V)
30-
15
10 150 150
Tl
SW SW
Tl
NPN
GP
A5T4261 A5T4402 A5T4403 A5T4409
GP GP GP GP
A5T4410 A5T5058 A5T505V A5T5086
625 800 800 625
120 300 250 50
80 300 250 50
60-400 35-150 30-150 150-500
GP GP GP GP
A5T5087 A5T5172 A5T5209 A5T52I0
625 625 625 625
50
250400
.1
100-500
10
50 50
50 25 50 50
100-300
.1
.7
200400
.1
.7
GP GP GP GP
A5TS219 A5T5220 A5T5221 A5T5223
625 625 625 625
20
15
35-500
2
.4
15 15
15
30400
.5
15
30-600
50 50
25
20
50-800
2
.7
GP GP GP GP
A5T5225 A5T5226 A5TS227 AST5400
625 625 625 625
25 25 30 130
25 25 30 120
30400 30400
50 50
.8
50-700 40-180
2 10
.4
PNP PCH PCH PCH
GP
A5T5401
625
160
150
60-240
re
AST5460
SEE FET INTERCHANGEAMl TYUST
FE
A5T5441 A5T3462
SEE FET INTERCHANGEAMlityust
FE
NPN NPN
GP GP
A5T55SO AST5S51
Tl
160 180 SEE DATA SHEET SEE DATA SHEET
Tl
NPN NPN NPN
288S
Tl
PNP
A5T5087 A5TS172 A5T5209 A5T5210
Tl
PNP
A5T521? A5T5220 A5T5221 A5T5223
Tl
Tl Tl
55555888
Tl Tl
Tl
NPN NPN NPN
Tl
NPN NPN
Tl
PNP
Tl
NPN
A5T5225 A5T5226 A5T5227 A5T5400
Tl
NPN
A5T5401
Tl
A5T5460 A5T5461 A5T5462
Tl
A5T5550 A5T5551 A5T6116 AST6117
Tl
UJ
A5T6U6
Tl
UJ
AST6117
A5T6118 A5T6449 A5T6450 A6T5222
Tl
UJ
A5T6118 A5T6449 A5T6450 A6T5222
A7T3391
Tl
A7T3391A A7T3392 A7TS172
Tl
A5T6114 A5T6117 A5T6118 A7T6027
Tl
n Tl Tl
Tl Tl
Tl
PNP PNP PNP
25
SEE FET
.4 .4
1
.2
1
.2
MM
"C
10 150 150
.35
RF
PNP PNP
Tl
kH>
(MHi)
(mA)
(V)
WW
Tl
•
vCiO
•Tc-M'C
| AST4261 A5T4402 A5T4403 A5T4409
hf.
'T
Tl
REPLACEMENT OR NEAREST EQUIVALENT
TYPE
2G 30 60
1
1
150 200 60
60 30 30 40
30 30 10
150
10 10 10 10
250 100 150 250
40
10 150 150 10
35 30 30 50
150 100 100 150
.2
100 100 10 10
30 30 50 30
50 50 100 100
10
.2
10
40
100
10 10
.15 .15
10 10
50 50
100 100
4
1
4
20
450
20
600
30 30
1
.1
.3
1
.3
.25
.5
.8
30 30
INTERCHANGEAMLITYUST 60-250
140 160
625 625
ON ON
80-250
A5T6 116 A5T6 117 1
Tl
Tl Tl
Tl Tl Tl
NCH NCH NPN
FE
NPN NPN NPN NPN
GP GP GP GP
A7T339I
PUT PUT PUT PUT
UJ UJ
A5T4116 A5T6117 A5T«118 A7T4027
FE
RF
UJ UJ
A7T33»1A A7T3392 A7TSI72
DATA SHEET ON A5T6 118 SEE FET INTERCHANGEAMLJTYI4ST
SEE
SEE FET INTERCHANGEAKIlJTYLIST 20-1500 20 15 625
25 25 25 25
625 625 625 625
SK UNUUNCTION SEE
SEE SEE
250-500 250-500 150-300 100-500
25 25 25 25
'
Instruments Texas INCORPORATED •
2 2 10
INTERC HANGEABIUTY LIST
UNUUNCTION INTERC HANGEAMUTY LIST UNUUNCTION INTERCHANGEAMUTY UST UNUUNCTION INTERC HANGEAMUTY UST
POST OPFICK BOX SO 12
2
DALLAS, TBXAS 7S223
-
.25
10
100
1
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES
MAXIMUM
o 5 U
fc
TYPE
NUMBER
5
REPLACEMENT OR NEAREST EQUIVALENT
vCBO
TA =25°C •TC -25°C
A7T6028 A8T404 A8T404A A8T3702
Tl
POT
UJ
Tl
sw sw
Tl
PNP PNP PNP
GP
A7T6028 A8T404 A8T404A A8T3702
A8T3703 A8T3704 A8T3705 A8T3706
Tl
PNP
Tl
NPN NPN NPN
GP GP GP GP
NPN NPN NPN NPN
GP GP GP GP
A8T3707 A8T3708 A8T3709 A8T3710 A8T3711 A8T4026 A8T4027 A8T4028
A8T4029 A8T4058 A8T4059 A8T4060
Tl
Tl
Tl Tl Tl
« MIN
(V)
12
60-300
50
.25
50
100
30-150
50 50 50 50
.25
50
.6
100 100 100
100 100 100 100
A8T3707 A8T3708 A8T3709 A8T3710
625 625 625 625
30 30 30 30
30
100-400
30 30 30
45-660 45-165 90-330
A8T371
180-660
PNP PNP PNP PNP
GP GP GP GP
A8T4029 A8T4058 A8T4059 A8T4060
625 625 625 625
80 30 30 30
80 30 30 30
Tl
PNP PNP
71
NPN
GP GP GP
A8T4061 A8T4062 A8T5172
SC
TIC46
GE
.15
30 30 30 20
30 60 80 60
C103A
.15
12
50 50 50 40
30 60 80 60
Tl
MM
12
625 625 625 625
625 625 625 625
A8T4061 A8T4062 A8T5172
MIN
30400
A8T3703 A8T3704 A8T370S A8T3706
A8T4026 A8T4027 A8T4028
Tl
"c
30-400
24 35 25
GP GP GP GP
Tl
MAX • (V)
25 40 40
NPN
Tl
"c
»T
kHz
(mA)
625 625 625
PNP PNP PNP
Tl
•
(i»A)
(Mtfa)
SEE UNIJUNCTION INTERCH ANGEABILFfYL 1ST
Tl
Tl
MAX •
(V)
Tl Tl
If.
vCE(«rt)
Vgjo 1
(mW)
Tl
ELECTRICAL CHARACTERISTICS
*T
Tl
s a u
Tl
RATINGS
Z
as
100-300
50-150 30-600
1
10
1
1
10
100 45
1
1
1
1
10 10
45 90
10
180
1
100 100 100
100-300
100
45-660 45-165
625 30 30 90-330 625 30 30 180460 625 25 25 100-500 SCR - SEE POWER DATA BOOK
1
.1
40-120 40-120 100-300
100-400
.8
12
.5
500 500 500
.5 .5
100 100 150
.5
500
.1
.7
1
.7
1
.7
10 10 10
1
.7
10
90
1
.7
10
.25
10
180 100
10
150 100
45 45
1 1
C103Y C103YY
GE GE
SC SC
TIC44
C413N C680
CR NCH CR NCH
FE
2N6451
FE
C681
CR CR CR CR
NCH NCH NCH NCH
FE
CR CR CR CR
NCH NCH NCH NCH
FE
CR CR CR CR
NCH NCH NCH NCH
C682 C683 C684
TIC45
SCR SCR
-
-
SEE SEE
POWER DATA BOOK POWER DATA BOOK
SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEABILITY LIST 1
FE FE FE
2N3460 2N3460 2N34S9
"
SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABHITY LIST l
C685 C6690 C6691
C6692
1
FE FE
FE
2N34S9 2N3458 2N3458 2N3459
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST l
CM6O0 CM601
CM602 CM603
1
FE FE
FE FE
2N4857 2N4856 2N4856 2N4856
SEE FET INTERCHANGEABILITY UST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABIUTY LIST
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
3-69
TRANSISTOR INTERCHANGEABIUTY MASTER LIST OF NONREGISTERED TYPES
ELECTRICAL CHARACTERISTICS
MAXIMUM RATMOS Pt
XI
E
TYPE
NUMBER
REPLACEMENT Oft NEAREST EQUIVALENT
<
A -2S°C
1
w Veto
(mW)
NCH NCH NCH NCH
FE
CM644 CM645 CM646 CM647
CR NCH CR NCH
FE
NCH CR NCH
FE
CM697 CMX740 D16G6
CR NCH CR NCH
FE
RF
TIS62
D16P1
GE NPN GE NPN
DA
2N5525
D29E1 D29E2 D29E4 D29E5
GE GE GE GE
PNP PNP PNP PNP
GP GP GP GP
TIS91
D29E6 D29E7 D29E9 D29E10
GE GE GE GE
PNP PNP PNP PNP
GP GP GP GP
T1S91
D29F1 D29F2
GE GE GE GE
PNP PNP PNP PNP
GP GP GP GP
2N4060
D29F5 D29F6 D29F7 D2T918
GE PNP GE PNP GE PNP
GP GP GP
2N4060
NPN
DU
2N4061 2N4061 D2T918
D2T221S D2T2218A D2T2219 D2T2219A
Tl
NPN NPN NPN NPN
DU DU DU DU
D2T2905 D2T290SA D32K1 D32P1
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D32P2 D32P3 D32P4 D33D21
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CM640 CM641 CM642 CM643
CR CR CR CR
FE FE
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2N4858 2N4858 2N4857
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2K-
5
1.4
200
500 60
60-200
2
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150-500
2
.75
60-120
2
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100-200
2
.75
500 500 500 500
100 135 80 120
150-300 250-500 60-120 100-200
2
.75
2
.75
135 135
2
.75
2
.75
500 500 500 500
60-120 100-200
2 2
.25
150-300 250-500
2
.25
2
.25
200 400
30
12
18
12
500 500 500 500
35 35
25 25
50 50
40 40
500 500 500 500
50 50 70 70
40 40 60 60
360 360 360 360
40 40 40 40
40 40 40 40
360 360 360 400
60 60 60 30
60 60 60
D2T2218 D2T2218A D2T2219 D2T22I9A
60
30 40
100-300
75
60 75
30 40
100-300
DU DU
D2T2905 D2T2905A
40 60
100-300
GE NPN
SW
TISI13
GE NPN
RF
2N4994
500 360
60 60 30 40
25 30
NPN NPN NPN NPN
RF RF
2N4994 2N4995 2N4995
GP
TIS90
360 360 360 500
40 40 40 35
30 30 30 25
Tl
Tl Tl Tl
Tl
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TIS91 T1S91 TIS91
TIS91
TIS91
2N4061 2N4061
2N4062
15
60-120
2
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100-200
2
.25
150-300
2
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10 10 10 10 10 10 10 10
600
150 150 150 150
250 300 250 300
150 150 100 10
200 200 275 115 125 150 175 100
150 150 150 150
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50-200 40-80
150 150 100 2
60-120 100-200
2 2
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150-300 60-200
2
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10 10 10
2
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500
100-300 100-300
100-300
Instruments Texas INCORPORATED POST OFFICE BOX 5012
.25
DALLAS, TEXAS 75222
.3
A .3
.4 .2
.15
.15
80 120
TRANSISTOR INTERCHANGEABIUTY LIST OF NONREGISTERED TYPES
MASTER
MAXIMUM RATMOS
n TYPf
NUMMK
REPLACEMENT OR NEAREST EQUIVALENT
<
1
ELECTRICAL CHARACTERISTICS
*T
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MM
G£ OE GE GE
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GP GP GP GP
D33D27 D33D29 D33D30 D33K2
OE OE GE GE
NPN NPN NPN NPN
GP GP GP
TIS90
SW
TIS133
DU4339 OU4340
IN
FE
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IN
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IN
NCH NCH NCH NCH
El 02
IN
E103 El 08 El 09
IN
10
IN
El 11
IN
IN
TIS90 TIS90
TIS90 TIS90
TIS90
(mW)
(V)
500 500 500 500
SO 50 50
25 40 40 40
500 500 500 500
50 70 70 50
40 60 60 40
35
MAX •
(V)
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kHz
MM
MM
|mA)
(V)
(mA)
(MHz)
150-500
2
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2
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100-200 150-300
2
.75
2
.75
500 500 500 500
135
60-120
250-500 60-120 100-200 50-200
2
.75
2
.75
2
.75
100
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FE
2NS047 2N5950
FE
A5T3S21
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2N5953 2N5950
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80 120 135
500 500 500 100
150
80 120 275
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IN IN
NCH NCH NCH NCH
FE FE
SEE FET INTERCHANGEABIUTY LIST SEE FET INTERCHANGEABIUTY LIST
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EN697 EN706 EN708
F
F
NCH NPN NPN NPN
F
MPN
F
PNP
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NPN NPN
F
EN718A EN722 EN744 EN870
F
EN87I
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EN914 EN915 EN916
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EN918 EN930 EN956 EN1132
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EN1613 EN1711 EN2219 EN2222
NCH NCH NCH NCH
F F
NPN NPN NPN NPN
FE FE
TIS73
FE
TK74 TB75
FE
FE
GP
GP GP
A5T2243
GP
A5T2192
SW RF
2N4994 2N4995
RF
F F
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MPN MPN MPN MPN
GP GP GP GP
F F F
2N5448
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GP GP GP
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A5T2193
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NPN NPN NPN
F
2N5245 A5T2193
SW SW
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UST UST UST UST
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300 200 200
60 25 40
30
40-120
150
1.5
15
20-
10
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15
30-120
10
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300 200 200 220
75 50 20 100
40
40-120 30-90
60
40-120 40-120
150 150 10 150
1.3
35 12
220 200 200 200
100
60
100-300
40 70 45
15
30-120
50 25
50-200
45 40 35
RF
TIS62
AST3707 A5T2222 A5T2907
200 200 220 300
30 45 75 50
AST2193 AST2222 A5T2222 A5T2222
300 300 200 200
75 75 60 60
15
40 40 30 30
50-200 20-
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3
100-300
.01
100-300
150 150
30-90
40-120 100-300 100-300 100-300
Texas INCORPORATED Instruments POST OFFICE BOX 5012
150 10 10 10
DALLAS, TEXAS 75228
ISO 150 150 150
1.5 .2
5 5 .25
.5
.4
1.5
1.5
1.5 1.5 1.6 .4
150 10 10
25
50 200 300
ISO 150 10 150
25 25
60 60 900 50
30
150 10
50
10
50 50
10
10
12510
150
150 150
50
150 150 500 150
25 50
60 300 250 300
600 90 70 60 60 70 250 250
3-71
TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS "T
Tl
£
TYPE
NUMBER
< <
l
<
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200 200 200 300
40 60 12
12
100-500 40-120
60
40
100-300
A5T2907 2N3903 2N3903 2N3903
200 200 200 200
60 40 30 40
40
100-300 30-120 30-120
150
.4
30
.18
10
.2
30-120
30
.18
200 200 300 200
40 40 45 45
20 40 45 45
30-120
30
.18
50-150
10
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100-300
150 150
.4
40-
15
SW
EN2907 EN3009 EN3011 EN3013
F
PNP
GP
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F
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SW SW SW
EN3014 EN3250 EN3502 EN3504
F
NPN
F
PNP PNP PNP
SW SW
2N3903
F
GP GP
A5T3504 A5T3504
EN3962 FE0654A
F
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GP
A5T4061
FE
2N5950
FE0654B
F
FE
2N5951
FE3819
F
NCH NCH NCH
FE
2N5953
FE5245 FE5246 FE5247 FE5457
F
NCH NCH NCH NCH
FE
2N5245 2NS246 2N5247 2N5953
SEE FET INTERCHANGEABILITY LIST SEE FET INTERCHANGEABILITY LIST
FE5458 FE5459 FE5484 FE5485
F
NCH NCH NCH NCH
FE
SEE FET INTERCHANGEABILITY LIST
FE
2N5952 2N5950 2N59S3 2N5952
FE5486 FT0654A
f
FE
2N5949
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FT0654B FT0654C
f f
NCH NCH NCH NCH
FT0654D
f
FT701
f
FT703 FT704
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FT3567 FT3568 FT3569
F
FT3641
F
31 w
F
F
F
F
F F
F
GP
FE FE
FE
60
15 12 15
100-300
100-450 60 60 200 SEE FET INTERCHANGEABIL TY LIST
10
.2
.01
.35
30 150
.19
1
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.4
.25
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kHz
MIN
MIN [MHz)
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(V)
A5T3707 2N4423 A5T2907
(V)
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F
GP
MAX
(V)
F
F
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(mW)
SW
F
MAX •
(mA)
NPN NPN
EN2369A EN2484 EN2894A EN2905
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SO0 80 60 40-150 SEE FET INTEKHANGEAMIJ TV LIST
300
10 10
.15
130 130
100 100
.15
.25
40-
.01
.25
130 150 150 10
100
40-150
10 150 150
110-
2 2
.25
330 350
60 60
60 60
330 500 500 400
80 25 40 20
SO 23 40 20
400 400 360 360
20 20 25
20 20
110-
15
20-
40
15
30-120
360 360 360 360
40 70 70 60
15
50 50 30
100-300
.01
40-120
150
.3
360 360 360 360
75 60 75 40
40 30 40
40-120
15
40-120
150 150 150 10
.3
100-300
.23
50-500
100400
.15
GP GP
A5T3707 AST3707
OE OE OE GE
NPN NPN NPN NPN
SW
OET2221A GET2222 OET2222A GET2369
GE OE OE GE
NPN NPN NPN NPN
GP GP OP
OrT24S4 GET2904 OET2905 GET2906
OE GE OE OE
NPN
GP GP GP GP
A5T3707 A5T2907 A5T2907 A5T2907
360 360 360 360
60 60 60 60
60 40 40 40
.01
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PNP PNP PNP
150 150 130
.4
100-300 40-120
GET2907 OET3013 GET3014 OET3563
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PNP
GP
60 40 40
150
A
15
30-120 30-120
30 30
.18
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TIS63
360 360 360 250
100-300
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A5T2P07 A7T3903 A7T3903
40
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30
12
20-200
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OET3638 GET3638A GET3646 GET5305
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25 25
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360 360 360 400
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40
15
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DA DA DA DA
25 25 40
OETS308A
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IMF3954 IMF3934A IMP3955
N NCH N MCH N NCH
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OE OE OE OE
OET914 OET929 OET930 GET222I
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A5T4027 A5T4026 A5T4026
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A5T3709 A5T3707 TIS110 TIS110
A5T2222 A5T2222
SW
DA
FE
FE
2NS525 2NS52S
2NM2J 2NS52S 2N5J45 2NSJ4J 2NS547
50-230 30-
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30-120
10
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60-120
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100-300
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400 40 40 7K-70K SEE FET INTEKHANGEAMUtYLIST SEE FET INTERCHANGEAMUTYUST SEE FET INTERCHANGEANUTYLIST
2
400 400 400 400
40
40 40
100-
Texas INCORPORATED Instruments POST OFFICE BOX S013
.
MM (MHx)
100
NPN NPN NPN NPN
FT5041
F
MM
(mA)
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kHz
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FET INTERCHANOEAMLITY LIST
FET INTEUCHANOeASIUTY UST FET
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NCH NCH NCH NCH
FE
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TIS73
FE
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FE
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NCH NCH NCH NCH
FE
TIS73
FE
T1S74
FE
T1S75
FE
2N5952
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3N207 3N156 3N160
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400 400 400
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40-200 40-200
400 400 400 600
30 30 30 40
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10 10 10
300 300 300
1
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600 600 600 250
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TRANSISTOR INTERCHANGEABILITY MASTER LIST OF NONREGISTERED TYPES
EUCTMCAL CHARACTERISTICS
MAXIMUM RATINGS
I
TYPl
NUMIHt
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REPLACEMENT 0* NEAREST EQUIVALENT
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M01121 MD1122
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400 400 400 600
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M NPN M NPN M NPN M NPN
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TYPE
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2N3382 2N3383 2N3384
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2N3385 2N33B6 2N3387 2N3436
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30 15
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40 40 40 30
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1.5-2.3
3-6
1.5-2.3
2N3331
30 30 30 30
3-20
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30 30 30 30
3-20
1.5-3
3-30
4.5-12.
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50 50 50 50
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50 50 50 50
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2N3821 2N3821
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2N3454 2N3455 2N3456 2N3457
N N N N
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2N3458 2N3459 2N34«0 2N3465
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5-7 7.5-15
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20 20 20
5-10
3-15
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18
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18 18
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6 6
NF NF NF NF
6 5 5 5
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25 25 25
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Texas INCORPORATED Instruments •
•
15-50
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MAX
2.5-7
15-50
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20 30 25 20
SYMBOL
7.5-12.
15-30
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50 50 50 40
1-4
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20 40 40 40
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2N3437 2N3438 2N34S2 2N3453
2N3466 2N3573 2N3574 2N3575
2N3336 2N3459 2N3460
Ch.
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18
6 6 6 65
2 DB 2 DB 2 DB
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TRANSISTOR INTERCHANGEABILITY REGISTERED FIELD-EFFECT TRANSISTORS
ELECTRICAL CHARACTERISTICS
NUMBHt
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1
(mmhe)
2-3
2.5-7.5
50 SO 50 50
MR4
4
NF NF NF NF
2 DB 2 DB 2 DB
100 100
1.5 PF
1.5 1
1.5 1
DB DB DB DB
IK IK
TRANSISTOR INTERCHANGE ABILITY REGISTERED FIELD-EFFECT TRANSISTORS
BKHUCAL CHARACTERISTICS
type
NUMBER
p s '
jC
£
I a
Tl
RATED
REPLACEMENT OR NEAREST EQUIVALENT
DRAMOATE VOLTAGE
MM (V)
2N3971
N
M
Cb.
MM MAX
MAX
MAX
(mA) (HMMM|
(mA)
|HWNIOJ
FE
30 30
FE
2N3970
50-150
J
FE
2N3971
40 40
J
FE
J
FE
40 25
5-30
P
10-
25 16
P
J
FE
12
J
FE
25 25
10-
P
2N3972 2N3993 2N3993A 2N3994
2-
2N3994A
25 50 50 25
2-
J
FE
J J
2N3972 2N3993 2N3993A 2N3994
N
2N3994A 2N4038 2N4039 2N4065
P
J
FE
N N
K3
FE
IG
FE
P
K3
FE
3N174
2N4066 2N4067 2N4082 2N4083
P
IG
FE
P
IG
FE
3N207 3N207
N N
J
FE
J
FE
2M4084 2N4085 2N4088 2N4089
N
J
FE
N
J
FE
P P
J
FE
J
FE
2N4090
P
J
FE
2N4091
N
J
FE
2N4091A 2N4092
N N
J
FE
J
FE
2N4092A 2N4093 2N4093A 2N4094
N N N
N
2N4095 2N4117 2N4117A 2N4118
N N
2N4118A 2N4119 2N4119A 2N4120
N N N
2N4139 2N4220 2N4220A 2N4221
N N N N
N N
P
.4-2
.95-M
.4-2
.95-1^4
5 5 25 25
16 12
CRSS
3.5 PF
.4-
4.5
CRSS
.7PF
7 7
CRSS CRSS NF NF
1.5 PF
2 DB
1.5-2.5
2J2.5-
1-10
1.5-7.5
18
1-10
1.5-7.5
18
2N3331 2N3330
50 50 30 30
2N3329 2N4091 2N4091 2N4092
30 40 50 40
50 40 50 40
40 40 40 40
FE FE
J
FE
J
FE
2N4092 2N4093 2N4093 2N4856
J
FE
2N4857
J
FE
J
FE
J
FE
J
FE
J
FE
J
FE
IG
FE
3N174
25
J
FE
J
FE
J
FE
J
FE
2N3458 2N4220 2N4220A 2N4221
50 30 30 30
.25-1.3
.3-
.25-1.3
.3-
1-1.6
10
.8-1.3
10
NF NF NF NF
.5-9
10 16 16 16
NF CRSS CRSS CRSS
16 16 16 32
CRSS CRSS CRSS CRSS
32
CRSS CRSS CRSS CRSS
SOSO15-
1588-
75-
20-
40 40 40
.03-.09
.07-21
3
.03-.09
.07-21
3
.08-.24
.08-25
3
.08-.24
.2-6
.08-25 .1-33
3 3
.2-6
.1-33
3
5-12
.7-
8-11
3.5-7
18
1-4
6 6 6
.5-3 .5-3 .2-6
.75-
2-5
Instruments Texas INCORPORATED POST OFFICE SOX 5012
•
IK
1M
•10-50
J
1
D8 D8
CRSS CRSS CRSS CRSS
•10-50
J
1.5
6 PF
.1-1.5
.4-2.5
(Hi)
NF NF
6PF
1.5-2.5
2-8
f
1M 1M
-.1
5-15
•
6PF
30 30 50 50
2N5545 2N5546
MAX
CRSS CRSS
25-75
3-6
SYMBOL
(1*)
2N3821 2N3821
N N N
OTHER PARAMETER
•D(on)
1
1 2N3969 2N3969A 2N3970
dss
DALLAS. TEXAS 78222
4.5
4.5 PF
3PF 5PF
1.5 PF
1M 1M
2 DB 2 DB
2 DB 1.5
DB DB
1.5
DB
1.5
IK IK
5PF 5PF 5PF
1M 1M 1M
5PF 5PF 5PF 7PF
1M 1M 1M
7PF 1.5 PF 1.5 PF 1.5 PF
CRSS CRSS CRSS CRSS
1.5 PF
NF CRSS NF CRSS
2 DB
1.5 PF 1.5 PF
1M 1M 1M 1M 1M 1M
.7PF
2PF 2.5
DB
2PF
100 IK
3-95
TRANSISTOR INTERCHANGEABILITY REGISTERED FIELD-EFFECT TRANSISTORS
ELECTRICAL CHARACTERISTICS
TYPE
NUMBBt
>.
K
i
s
Tl
RATED
REPLACEMENT
DRAIN-
OR NEAREST
GATE VOLTAGE
EQUIVALENT
* I
1 N N
2N4221A 2N4222 2N4222A 2N4223
j
FE
j
FE
N
j
FE
N
j
FE
2N4223A 2N4224 2N4224A 2N4267
N
j
FE
N
j
FE
N
j
FE
P
IG
FE
3N160
2N4268 2N4302 2N4303 2N4304
P
K3
FE
N
J
FE
N
J
FE
3N160 2N5953 2N5952
N
J
FE
2N5951
2N4338 2N4339 2N4340 2N4341
N
J
FE
2N3460
N
J
FE
N N
J
FE
J
FE
P
J
P
J
AF AF
P
J
FE
N
IG
2N4352 2N4353 2N4360 2N4381
P P
Cfc.
brfj
MAX
MAX
MIN
(mmho)
(mA) (mmho)
(mA)
.75-
6
2-6
2.5-6
6
30 30
5-15
.75-
6 6
30 30 30 30
3-18
2.7-
2-20
1.7-
2-20
1.7-
3-18
3-7
14
.2-.6
.6-1.8
.5-1.5
.8-2.4
2N3459 2N3458
SO 50 50 50
FE
2N3994 2N3993 2N3993 3N169
25 25 25 25
IG
FE
3N160
IG
FE
P
J
AF
3N161 A5T5462
P
J
FE
25 30 20 25
2N4382 2N4391 2N4392 2N4393
P
J
FE
N
J
FE
N
J
FE
N
J
FE
2N4416 2N4416A 2N4417 2N4445
N
J
FE
J
FE
J
FE
N
J
FE
2N4446 2N4447 2N444S
N
J
FE
N
J
FE
J
FE
J
FE
N
J
FE
N
J
FE
J
FE
J
FE
2IM4856
2N4856A 2N4857 2N4857A 2N4858
N N
N N
N N
25 40 40 40
2N4416 2N4416A
30 35 30 25
6 6 6 14
•20-100
DB DB
200M
NF
5DB
CRSS CRSS CRSS
2PF
200M 1M
2 PF
1M
2.5
2PF 2.5
3PF 3 PF
CRSS NF NF
2DB 3DB
IK IK IK
DB DB DB DB
IK IK IK IK
DB DB DB
100 100
.5-15
1-
6
NF
7 7
2 DB
1.3-3
7
3-9
2-4
7
NF NF NF NF
20 20 20 6
NF NF NF CRSS
5 12
CRSS CRSS
1.3 PF
NF CRSS
5 DB
CRSS CRSS CRSS CRSS
4-12
2-6
10-30
4-8
10-30
4-8
•3-
•301-4
10-30
2-
20 20
10-30
4-
20
3-30
2-8
50-150
14
25-75
14
5-30
14
5-15
4.5-7.5
5-15
4.5-7.5
4 4
5-15
4.5-7.5
3.5
50
25 20
100-
100-
2N4856
20 40
50 50 50
50-
18
2N4856A 2N4&57 2N4857A 2N4858
40 40 40 40
150-
50-
10
20-100 20-100
18
10
8-80
18
Instruments Texas INCORPORATED DALLAS, TEXAS 7S222
f
5 DB
2-
1.2-3.6
•
100 IK 100
4-10
1-
MAX
(Hi)
NF CRSS NF NF
6 6
.5-5
150-
POST OFFICE BOX 5012
SYMBOL
Iff)
2-6
•20-100
2N4391 2N4392 2N4393
MAX
30 30
30 30 30 30
2N4342 2N4343 2N4343 2N4351
OTHER PARAMETER
•'D(on)
MIN (V)
2N4221A 2N4222 2N4222A 2N4223
dss
NF NF NF CRSS
1 1 1 1
1.5 1.5 1.5
1M
1.5 PF
4PF 100
5PF
5PF 3.5 PF 3.5 PF 3.5 PF
2DB 2DB 2 DB 25 PF
1M 1M 1M 100M 100M 100M
CRSS CRSS CRSS CRSS
25 PF 25 PF 25 PF
8PF
1M
CRSS CRSS CRSS CRSS
4PF 8PF
1M 1M 1M 1M
3.5 PF
8 PF
TRANSISTOR INTERCHANGEABILITY REGISTERED FIELD-EFFECT TRANSISTORS
BKTRKAL CHARACTBHSTKS TVH
I
p i
NUMMt
3
Tl
RATED
REPLACEMENT
DRAIN-
MNUKSl
GATE VOLTAGE
EQUIVALENT
S
f (V)
2N4S58A 2N4859 2N4S59A 2N4860
N N N N
2N4S60A
N N N N
2N4861
2N4M1A 2N4M7
2N4869
N N N N
2N4869A
N
2N4M1
N N N
2N4867A 2N4868
2N4M8A
2N4SS2
2N4M3 2N4S84
2N4M5 2N4SM 2N4977 2N4978 2N4979 2N5018 2N5019
2N5O20 2N5021 2N5033 2NS045
N N N N
j
re
2H48MA
j
FE
j
FE
2N4(«i)
i
s
2N5548 2N5549 2N5555 2N5556
dss
TIS74 TIS7J
40 40
2N59S3
2N4858 2NS549 2N5549
40 40 40 40
MAX (iMnno}
3.54.5 6-15
10 8 5
6
2-5
1.5-6.5
6
4-10
1.5-6.5
6
1-10
1.5-
7 7
1-10
1-10
2-3
2-3
SYMBOl
7
5-30
7.5-12.5
12
5-30
7.5-12.5
12
5-30
7.5-12.5
CRSS CRSS CRSS CRSS
NF NF NF
CRSS CRSS NF NF
5.3-.6
.3-65
.5-1
.4-,8
.8-1.6
^45-.9
3 10 10
NF
1.5-6.5
7
CRSS CRSS NF
4-10
2-6.5
8-20
3-7.5
.4-1.6
7 7 5 5
NF NF CRSS CRSS
.8-4
.5-2
5
.02.10
.06-.22
5
.1-.4
5 5
CRSS CRSS CRSS CRSS
40151-5
.05-.2 .2-1
.O8-.40 .25-1
.2-1
.16-.5
5
CRSS
2-15
4.5-12
15
1O40
6.5-14
30-80
8-17
15 15
NF NF NF
.70-2
40 40 40 40
.03-.5
.07.25
.03-.5 .03-.5
.07.25 .07-25
.03-.5
.07-25
.25-.7
Instruments Texas INCORPORATED DALLAS, TEXAS 70223
3 3 3 3
NF NF NF NF
1M 1M 1M
3PF 3RF 1
10 10 3 3
2-7
'
3RF
1
25-
1-10
20 20 20
1.2 RF
NF
10
2-7
4Rf 2RF
CRSS CRSS NF
50-
2-7
1-10
•
(Hi)
NF NF NF CRSS
1-10
MAX
(R»)
1.5-6.5
.5-2.5
40 40 40 40
POST OPFICB BOX SOI 2
MAX
1
1 1
D» Dt
10 10
DB DB DB
10 10 10
DB DB 10 DB
2.6 1
4RF
1M
4RF 4RF
1M 1M
1
DB DB
IK IK
1
DB
IK
3.5 RF
1
2.5
DB
1M 1M 100M
2.5
DB DB
100M 100M
1.5 PF
1.5 PF
1M 1M
1.5RF
1M
3.5 RF
2.5
1
PF
1
PF
1
RF
1 1 1 1
RF
DB DB DB
3DB 3DB 3DB 3DB
100 100 100 100
TRANSISTOR INTERCHANGEABILITY REGISTERED FIELD-EFFECT TRANSISTORS
ELECTRICAL CHARACTERISTICS
TYPE
t
3
NUMBER
^
£
Tl
RATED
REPLACEMENT OK NEAREST EQUIVALENT
DRAIN-
GATE VOLTAGE
! (V)
2N5906 2N5907 2N5908 2N5909 2N5911 2N5912 2N5949
2N5950 2N5951 2N5952 2N5953 2N6449
N N N
N N N
j j
FE
j
FE
j
40 40 40 40
FE
i
FE
j
FE
GP GP
2N5949 2N5950
25 25 30 30
j
GP GP GP
j
FE
2N5951 2N5952 2N5953 2N6449
30 30 30 300
N N
j
N N N
j
N
FE
j
j
dss Ch.
b-hl
MM
MIN
MAX
(mA|
(mA) (mmho)
.03-.5
MAX (mmho)
.03-.5
.07-.25
3
.03-.5
.07-.25
3
.03-.5
.07-.25
3
7-40
5-10
5
7-40
5-10
5
12-18
3.5-7.5
10-15
3.5-7.5
7-13
3.5-6.5
4-8
2-6.5
2.5-5
2-6.5
2-10
j
FE
2N6450
200
2-10
.5-3
j
FE
15-30
FE
j
FE
20 20 20
5-20
j
2N6451 2N64S2 2N6453
2N6454 3N89 3N96 3N97
N
j
FE
2N6454
j
FE
P
j
FE
P
j
FE
25 30 30 30
15-50
P
N N
IG
FE
IG
FE
32 32
J
FE FE
50 50
.2-2
J
3N128
3N126 3N128 3N138 3N139
N
J
FE
N
IG
FE
N N
IG
FE
IG
FE
3N203
50 20 45 45
3N140
N N
IG
FE
IG
FE
N
IG
FE
N
IG
FE
3N201 3N201 3N201 3N128
20 20 20 20
3N145 3N146 3N147 3N148
IG
FE
IG
FE
IG
FE
IG
FE
3NI74 3N174 3N208 3N208
30 30 30 30
3N149 3N150
IG
FE
IG
FE
3N161 3N161
IG IG
FE
30 30 30 20
3N141
3N142 3N143
3N151 3N152
N
3N128
FE
3N128
6
(Hi)
1
100 100 100 100
NF NF NF NF
DB DB 2 DB 2 DB
10K 10K IK IK
NF NF NF CRSS
2 DB
IK IK IK
1 1
1 1
2 DB 2 DB
5 PF
CRSS
5 PF
5NV 10
10
5-20
15-30
15-50
15-30
25
20-40
25
VN NF NF
4DB 4DB
CRSS CRSS NF NF
.5 PF
NF NF CRSS
4DB 5DB
.45-1.3
.5-2.5
.45-1.3
4
.5-2.5
.45-1.3
4
3.5-7.7
1-3
5-10.
1-4
7 7
.25-1
14
1.5-4.5
.4-1.6
14
3-9
.6-2.7
14
5-25
5-12
5-25
3-7.5
7 5
NF 6-1.8
5-25
5-
5-30
5-12
NV
5NV NV IK IK
.5 PF
4DB 4DB
IK IK IK
.25 PF
200M 1M
DB
200M
5DB
100M
7
5-30 5-30
t
DB DB DB DB
1
VN VN VN
.5-2.5
•
NF NF NF NF
10 25 25
NF
4.5
•3*3•8•8-
•16-
*16•3-
.5-3
5-30
5-12
Texas INCORPORATED Instruments POST OFFICE BOX 5012
6 6 10
N
N N
6 6
.5-3
N
MAX
SYMBOL
(pf)
3
2N6451 2N6452 2N6453
3N98 3N99 3N124 3N125
MAX
.07-.25
2N6450
N N
OTHER PARAMETER
•'D(on)
DALLAS. TEXAS 75222
12
NF NF
10 DB
100
DB
200M
3.5
3-101
TRANSISTOR INTERCHANGEABILITY REGISTERED FIELD-EFFECT TRANSISTORS
ELECTRICAL CHARACTERISTICS
NUMMR
M li
i
REPLACEMENT OR NEAREST EQUIVALENT
DRAM-
w
GATE VOLTAGE
1 (V)
OTHER PARAMETER
Urn
•
FE
35 35 35
5
•10-
5
FE
3N169 3N170 3N171
•10-
IG IG
FE
3N171
N N N
3N172
P
IG
FE
3N161
40
•5-30
3N173 3N174 3N175 3N176
P
IG
FE
3N161
40
•5-30
P
IG
FE
IG
FE
N
IG
FE
30 30 25
•3-12
N
3N174 3N170 3N170
3N177 3N178 3N179 3N180
N
K>
FE
3N171
7
IG
FE
•3-
3.5
P
IG
FE
•3-
4.5
P
IG
FE
20 75 60 40
•10-
P
•3-
5
3N181
p
IG
FE
P
IG
FE
P
IG
FE
•25-
25 25 30
P
IG
FE
30 30 25 35
•40-
3N1S2 3N183 3N184
•20-
9
3N185 3NI86 3N188 3N189
P
IG
FE
10
FE
•10-
11
P
IG IG
FE
30 25 40
•15-
P
|p
IG
FE
40
IG
FE
N
IG
FF
P
IG IG
FE
P
3N156 3N156A 3N157 3N157A
P
IG
FF
P
IG
FF
P
IG
FF
P
IG
FE
3N158 3N158A 3N159 3N160
P
IG
FE
P
FE
N
IG IG
P
KJ
3N161
P
3N162 3N163 3N164
P
FE
FE
FF
3N174
10-25
5-12
•5-
•5-
1-4
5 5
•5-
1-4
5
•5-
1-4
5
*5-
1-4
5 7 10
7-18
5-30 •40-120
3.5-6.5
25 25
•40-120
3.5-6.5
40 30
•5-30
2-4
2.5
•3-30
1-4
2.5
40 40
•5-30
1.5-3
3
•5-30
1.5-3
3
5
•101.5-4
3.5
1-4
3.5
.4-
5
•15-
5
•40-
•
4
•20-
•5-30
1.5-4
4.5
•5-30
1.5-4
4.5
Instruments Texas INCORPORATED POST OFFICE SOX S012
10
20
•25-
DALLAS. TEXAS 75322
MAX
•
'
(Hi)
CRSS NF CRSS CRSS
8
20 20 50 SO
N
SYMROl
Iff)
3N153 3N128 3N155 3N155A
3N153 3N154 3N155 3N155A
3-102
dss
RATED
Tl
TYK
.6PF 5 08
1M 200M
1.3 PF
140K 140K
1.3 PF
CRSS CRSS CRSS CRSS
1.3 PF
CRSS CRSS NF CRSS
1.3 PF
1.3 PF 1.3 PF 1.3 PF
1.3 PF
D»
3.5
4PF
140K 140K 140K 140K 140K 140K
200M 1M
.7 PF
1M 1M 1M 1M
CRSS CRSS CRSS CRSS
.7PF .7PF .3PF .3PF
1M 1M 1M 1M
CRSS CRSS CRSS CRSS
1.3 PF
1M 1M 1M 1M
CRSS CRSS CRSS CRSS
CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS
4PF 10 PF .7 PF
1.3 PF
1.3 PF 1
PF
1
PF
.7PF .5PF .5PF .75 PF .25 PF
.35 PF .5 PF
8PF 10 PF 12 PF 3.5 PF 4.5 PF 5.5 PF 1.5 PF
1.5 PF
1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M TM
TRANSISTOR INTERCHANGEABILITY REGISTERED FIELD-EFFECT TRANSISTORS
BfCTmCAL CHARACTERISTICS
TYPE
NUMBER
p
1
SJ
p
3
Tl
RATED
REPLACEMENT OR NEAREST
DRAM-
EOUTVA1ENT
' I
GATE VOLTAGE
1 (V)
3N190
P
K3
FE
3N191 3N192
P
K5
re
3N193
N
N- K> K>
re
3N200
N N N N
3N201
3N202 3N203
3N204 3N205 3N306 3N207
N N N
re
IG
FE
IG
FE
3N201
KJ
re
IG
FE
3N202 3N203
IG
FE
IG
FE
FE
P
K5 IG
FE
3N204 3N205 3N206 3N207
3N208
P
IG
FE
3N208
3N2I1 3N212
N N N
IG
FE
3N21I
IG
FE
IG
FE
N N N N
IG
FE
IG
re
IG
re
IG
re
3N213
3N2U 3N215 3N216 3N217
"DSS
M
DSS
M
I (V)
KE4092 KE4093 KE4220 KE4221
IN
KE4222 KE4223 KE4224 KE4391
IN
KE4392 KE4393 KE4416 KE4856
N N N N
IN IN IN
j
TIS74
j
TIS75
j j
A5T3821 A5T3822
j
A5T3822
j
IN
N N N
j
2N5950 2NS949
IN
N
j
TIS73
IN
N N
j
TIS74
j
TIS75
N N
j
2N5245
j
TIS73
N N N N
j
TIS74
j
TIS75
j
TIS73
j
TIS74
j
TIS7S
j
IN
IN IN IN
(mA) [rmiin]
MAX
MIN
(nwnno]
MAX
16
8-
16
.5-3
1-4
2-6
2-5
5-15
2.54
3-18
2.7-
2-20
1.7-
50-150
30 40
5-15
6 6 6 6
6 14 14
5-30
14 4-
4
50-
18
40 40 30 30
20-100
18
8-80
18
8-80
2N5952 2N59S3 2N5245
30 25 25 25
3N161 3N161
20 20 30 30 30 30 30 30
IN
N N
KE5104 KE5105
IN
N
j
IN
N
j
SI
SI
N N
IG
SI
P
IG
SI
P
IG
M106 Ml 07
SI
P
IG
SI
P
IG
Ml 08 Ml 13
SI
P
IG
SI
P
IG
3N208 3N208 3N207 3N156
Ml 14 Ml 16 Mil 7 Ml 19
SI
P
IG
3N160
SI
IG
3N161
SI
N N
IG
3N160
SI
P
IG
3N161
40 30 50 80
MS11 Mill A
SI
P
IG
SI
P
IG
M517 MEM511
SI
P
IG
Gl
P
IG
3N161 3N161 3N161 3N174
30 30 30 30
MEM51IC MEM517 MEM517A MEM517C
Gl Gl Gl Gl
P
IG
3NI74
P
IG
P
IG
P
IG
25 25 25 25
IG
50-
18
20-100
18 18
1-8
2-8
5
2-6
3.5-7.5
5 5
5-15
5-10
1.5-4.5
4-12
1-2.2
7.5
1.5-3.3
7.5
•10-
2-
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2-
MO-
2-
*
8-200
2-4 2.5 2.5
-.01
,.
-.01
1-
•3-
1-
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,.
•25-
1.2-
•25-
1.2-
•20-
1.2-
Texas INCORPORATED Instruments POST OFFICE BOX 5012
OTHER PARAMETER
•
DALLAS. TEXAS 75222
SYMBOL
MAX
(pP)
15-
25-75
IN
MtOO M101 Ml 03 Ml 04
(mA)
40 40
KE4861 KE5103
IN
MAX
30 30 30 40
IN IN
MIN
40 40 30 30
KE4857 KE4858 KE4859 KE4860
IN
Cto
•lD(on)
!
1
1
e
f
(Hi)
CRSS CRSS CRSS CRSS
5PF
CRSS CRSS CRSS CRSS
2 PF
CRSS CRSS CRSS CRSS CRSS CRSS CRSS CRSS
5 Pf 2 PF 2 PF
2PF 2PF 3.5 PF
3.5 PF 3.5 PF 1.2 PF
8 PF 8 PF 8 PF 8 PF
8PF
CRSS CRSS CRSS CRSS
1.2 PF
CRSS CRSS
.5 Pf
8 PF 1.2 PF
1.2 PF
4PF
CRSS CRSS CRSS CRSS
4PF 4PF
CRSS CRSS CRSS CRSS
4 PF 10 PF
CRSS CRSS CRSS CRSS
CRSS CRSS CRSS CRSS
4 PF 4 PF
8 PF
8PF 4 PF 2.5 PF
7 PF 2.5 PF
4 PF 10 PF 10 PF 15 PF
1M 1M 1M 1M
1M 1M 1M 1M
1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M
1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M
TRANSISTOR INTERCHANGEABILITY NONREGISTERED FIELD-EFFECT TRANSISTORS
BECTRKAL CHARACTERISTICS
TYPE
NUMMR
S v
b
fe
§ f 5
ti
RATED
REPLACEMENT 0* NEAREST
DRAIN-
EQUIVALENT
*
I
3-108
Gl
P
IG
Gl
P
IG
Gl
P
IG
Gl
P
IG
MEM551 MEM551C MEM554 MEM554C
Gl
P
IG
Gl
P
IG
Gl
N
IG
Gl
N
IG
MEM556 MEM556C MEM557 MEM557C
Gl
P
IG
Gl Gl
P
Gl
N N
IG IG
MEM560 MEM560C MEM562 MEM562C
Gl
P
IG
Gl
P
IG
Gl
N N
IG
MEM563 MEM564C MEM571C MEM575
Gl Gl
IG
Gl
N N N
Gl
P
IG
MEM614 MEM655 MEM660
Gl
IG
MFE2000
M
N N N N
J
MFE200I MFE2004 MFE2005 MFE2006
M M M M
N
J
MFE2007 MFE2008 MFE2009 MFE2010
M M M M
N
MFE2011 MFE2012 MFE2093 MFE2094
M M M M
MFE2095 MFE2133 MFE3001 MFE3002
M M M M
Gl
Gl Gl
I
N N N
25 30 25
•3-
1-
•1.5-
.5-
3N208 3N207
30 25 20 20
3N174 3N174
3N16I 3N16I
3N203
J J
N
)
J
N
J
N
J
N N
J
N N N N
J
J
J
IG IG
MAX
OTHER PARAMETER
•1.5-
.5-
•1.5-
.5-
3-30
10-13
3-30
8-11
SYMROL
CRSS CRSS
35 30 30 30
•15-
2-
9
•10-
2-
11
•5-
1-
•5-
1-
4 5
CRSS CRSS CRSS CRSS
30 20 30 25
•15-
2-
3-
8-
5 8 6 50
CRSS CRSS CRSS CRSS
3-
8-
10-
.6PF
.5PF 20 PF
1
PF
4-10
2.5-6
5
CRSS
1
PF
8-20
4-8
5
1
PF
5PF 5PF 5PF
8-
-10
8-
16
15-
16
30-
16
CRSS CRSS CRSS CRSS
30 30 30 50
CRSS CRSS CRSS CRSS
20 PF
50 50 6 6
CRSS CRSS CRSS CRSS
20PF 2PF 2PF
6 20 5 5
CRSS CRSS CRSS CRSS
5015-
40100-
.1.7
.25-.5
.4-1.4
.3S-.7
1-3
25.5-4
.4-.8
12.7-3.5
Instruments Texas INCORPORATED •
.5PF .6PF
7 7
20-
POST OFFICE BOX 5012
1M 1M 1M 1M
4.5 PF
8
25 25
50 30 30 20
3.5 PF
5 5
6-10
2N4860 2N4859 2N4859 2N4859
2N5360 2N4860 3N128 3N169
1M 1M
6-
25 30 30 30
2N5358 2N5359
.5PF .7PF
1.1
1-20
2N5247 2N4860 2N4859 2N4859
25 25 50 50
1M 1M
4PF
1-20
3N214 2N44I6
25 25
PF
4PF
1.1
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•50-
1M
CRSS CRSS
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8-
PF
4PF
2.5 PF
*3-
6-
DALLAS, TEXAS 7S222
f
1M 1M 1M
CRSS CRSS CRSS CRSS
•3-
3-
o
(Hi)
50 45 20 20
3-
MAX
(pP)
M.5-
20 20 20 25
IG
N N
(mA) (nwnho)
(mA)
1-
IG
J
(mmho)
•3-
IG
J
MAX
MIN
40
IG
J
MAX
3N174 3N174 3N208 3N207
3N201 3N20I
Cta
•©(on)
MIN
IG
IG
M
OATE VOLTAOE
(V)
MEM520 MEM520C MEM550 MEM550C
'DSS
15 PF 15 PF 15 PF
20 PF
2PF 5PF 1.5 PF 1
PF
1M 1M 1M 1M
1M 1M
1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M 1M
1M 1M 1M 1M
TRANSISTOR INTERCHANGEABILITY NONREGISTERED FIELD-EFFECT TRANSISTORS
ELECTRICAL CHARACTERISTICS
TYPE
NUMBER
g
s
f-
g s
I
^
Tl
RATED
REPLACEMENT OR NEAREST EQUIVALENT
DRAIN-
dss
M
GATE VOLTAGE
u (V)
MFE3003 MFE3004 MFE30O5 MFE3006
M P M N M N M N
MFE3007 MFE3008 MFE3020 MFE3021
M N M N M P M P
MFE40O7 MFE40O8 MFE4009 MFE4010
M M M M
MFE401 MPF102 MPF108 MFE4012
M P M N M N M P
MMT3823 MPF102 MPF103 MPF104
M M M M
N N N N
J
MPFI05 MPF106 MPF107 MPF108
M M M M
N
J
N
J
N N
J
RF
MPF109 MPF111 MPF112 MPF120
M M M M
J
N N N
J
GP GP
J
RF
MPF121 MPF122 MPF161 NF500
M N M N M P NA N
J
NF501
NA NA NA NA
N N
NA NA NA NA
N N N N
NF506 NF510 NF51
NF520 NF521 NF522 NF523
IG IG
20 20 20
2-10
2-
4.5
2-10
2-
4.5
3N201
10-18
5.5
3N203 3N207
35 35
5-20
IG
J
P
J
J
J
RF
J
J
7-14
2N3823 2N3819 2NS953 2N5952
30 25 25 25
2N5951 2N5952
25 25 25 25
2N3819 2N3819 2N3819
IG
J J
7
40
IG
J
.5-
1.5-24
IG
J
•10-75
2-20
25 20 25 25
GP
7
2N5462 2N3823
.5-1
.9-2.7
7
1-3
7
1.5-3
1.5-3.5
2.5-5
2-4
7 7
2.2-4.5
7
2-7.5
7
2-7.5
6.5
.8-1.6
CRSS CRSS CRSS CRSS CRSS CRSS
7
5-20
3-8
2-20
2-7.5
CRSS CRSS CRSS CRSS CRSS CRSS CRSS NF
1-5
1-5
2-9
1.5-5.5
7 7 7 7
2-6
7
2.5-
8-20
4-
1.5-24
2-7.5
5 5 6.5
.5-24
.84
7
.5-20
.5-3
4.5
NF CRSS
f
1
PF
.2 PF .2 PF
1M 1M 1M
t.5 PF
IM
1.5 PF
1M
2PF
IM IM IM IM
2 PF 2 PF
2PF
2PF
IM IM IM IM
3PF 3PF 3PF 3PF
IM IM IM IM
3PF
2 PF
3PF 2.5 PF
1.2 PF
IM IM IM
2.5
DB
IK
2.5
1.2 PF
DB
IK
1.5 PF
IM
1-25
1-7.5
2-18
8-18
4.5
CRSS
7PF
IM
25
5-30
10-20
4.5
25
2-20
8-18
4.5
6PF 7PF
IM IM
40
.5-14
.8-6
7
25
1-30
2-
5
CRSS CRSS NF CRSS
2N3823 2N4416 2N4861 2N4861
15
1-30
2-
5
25 30 20
4-15
2.5-
4
2N3822 2N3821 2N3822 2N3821
30 30 20 20
J
CRSS CRSS CRSS
2.5-5
4-10
•
(Hi)
CRSS CRSS CRSS CRSS
4-16
MAX
SYMBOL
6
.5-
4-8
2N5950 2N3819
8-18
•10-75
25 25
J
J
.
40 2N3819 2N3819
J
2-20
40 40 40 40
J
J
5
IG
25 25
OTHER PARAMETER
(1*1
6
P
J
(fflmho]
MAX
8-18
J
J
MAX
MIN
2-18
J
J
(mA) (mmho)
35
P
N N
MAX
(mA)
3N203
IG IG
J
MIN
IG
P
N
3N156
IG
Cb.
•'D(on)
5-
1-10
1-10 .1-2
•
1.2 PF
IM IM
1
PF
.5-
.4.5.4-
Texas INCORPORATED Instruments POST OFFICE BOX 5012
IK
IM
20 20
5-
.1-2
CRSS CRSS
DB
1.2 PF
2.5
DALLAS. TEXAS 75222
3-109
TRANSISTOR INTERCHANGEABIUTY NONREGISTERED FIELD-EFFECT TRANSISTORS
ELECTRICAL CHARACTERISTICS
RATED
Tl
TYPf
#
NUMBBt
g <
E
jj
? S
REPLACEMENT OH NEAREST EQUIVALENT
^
I
GATE VOLTAGE
1
N N N N
NF582 NF583
NA NA NA NA
N N N N
NF584 NF585 NF4445 NF4446
NA NA NA NA
N
NF4447 NF4448 NF5457 NF5458
NA NA NA NA
N N N N
1
NF5459 NF5485 NF5486 NF5555
NA NA NA NA
N
J
N
J
NF5638 NF5639 NF5640 NF5653
NA NA NA NA
N N N N
NF5654 SU2028 SU2029 SU2031
NA N IN N IN N IN N
SU2032 SU2033 SU2034 SU2035
IN
N
IN
N N N
SU2098 SU2098A SU2098B SU2099
IN
N
J
IN
N
J
IN
N N
NF531
NF532 NFS33 NF580 NF581
3-110
IN IN
IN
N N N
N N
30 30 20 20
2N3459 2N3460 2N3459 2N3460
J J J J
M
Cb.
OTHER PARAMETER
•k>(on)
MAX
MIN tv)
NA NA NA NA
NF530
'DSS
DRAIN-
MAX
MIN
(mmho)
1mA) (mmho)
(rnA)
1-10
MAX
SYMBOL
MAX
OST OPftCB
BOX HIS
<
DALLAS, TIXAS TMtS
5
2
12
3 12 10
20 20 4 20
12
41-42 44-48 44-48
20 4 20 20
12 12
44-48 44-48 44-48 44-48
4 20 20 4
12 12
12 12
12
12 12
12 12
42-75 42-75 42-75 42-75
20 20
12 12
4 20
12 12
.42-73 .62-73
20 4
12 12
3-115
TRANSISTOR INTERCHANGEABILITY REGISTERED UNIJUNCTION TRANSISTORS
CHARACTERISTICS
z o
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u
NUMBER
! -i u
3-116
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12
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2N5431 2N6027 2N6028 2N6114
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PNPN PNPN
UJT
P-N
2N6115 2N6I16 2N6117 2N6118
UJT
P-N
PUT PUT PUT
PNPN PNPN PNPN
2N6I19 2N6120 2N6137 2N6138
PUT PUT PUT PUT
PNPN PNPN PNPN PNPN
300
A7T6027 A7T6028
Sm Sm
Data
300
300
2N6116 2N6I17
2N6U8
1
[
12
1
12
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4
.55-82
2
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4
2
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4-12
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2
2
.01
4-12
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2
1
.01
4-9.1
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4
2
.01
4-12
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2
2
.01
4-12
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2
1
.01
6-8.5
.72-80
2
4
.01
.58-62
1
5
.01
.58-62
1
15
1
A7t 6027 ATI 6028
5.5-8.2
5-25 it
it it
Instruments Texas INCORPORATED SO 12
12
4-9.1
$M2N6116DataShM SM2N61!7DalaSnM Sm2N6!18 DataSttM
POST OFFICE BOX
1
4-9.1
ShMtOn Shwt On
Data
.2
DALLAS. TSXAS 7M22
.1
TRANSISTOR INTERCHANGEABILITY
NONREGISTERED UNUUNCTION TRANSISTORS
CHARACTERISTICS
E Ui a D TYPE
NUMBER
i-
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< u. 3 Z < S
Z o 5 u <
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Tl
REPLACEMENT
Pd
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POT PNPN OJT P-N OJT P-N OJT P-N
A7T6028 2N4891
Sm
Tl
A7T602S
Tl
MU4891 MU4S92 MU4893
M M M
M04894
M
OJT
P-N
2N4894
TIS43
Tl
UJT
P-N
T1S43
Tl
UJT
P-N
T1S43 2N4891
Tl
(kR)
PNPN PNPN PNPN PNPN
A5T6116 A5T6117 A5T6118 A7T4027
Tl
1
•v
IP
'EB20
(mA)
(MA)
u (mW)
Tl
BB
POT POT PUT PUT
I
2N4892 2N4893
1
Data ShMt
On A7T6028
300 300 300
4-9.1
.55-.S2
2
S
.01
4-9.1
.51-.69
2
2
.01
4-12
.S5-.82
2
2
.01
300 300 300
4-12
.74-.86
2
1
.01
4-9.1
.55-.S2
2
.01
4-9.1
.5S-.82
2
5 5
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS, TEXAS 75222
.01
3-117
Transistor Data Sheets
"
TRANSISTOR DATASHEETS CONTENTS In this section are data sheets for
most of the Texas Instruments
to Tl's line of silicon power transistors, see either Section 0,
Excluded from
this
volume are data sheets for
Index. Loose-leaf data sheets for these devices
line
of standard, low-power silicon transistors. (For reference
Type Number Index, or The Power Semiconductor Data Book.
certain obsolescent types listed and so indicated in Section 0,
may be
available
upon
Type Number
request.
DERIVED TYPES Many
of the JEDEC-registered types are available in repackaged form.
derived from the original
JEDEC
type numbers by replacing the
"Repackaging" may mean providing a plastic-encapsulated
AST2222 from the
B
is
registered type (for example, the
A5T3904
registered with the in-line-lead
is
chips, "repackaging"
any
or
means no package
at
is
The
3N
designations of these repackaged devices are
prefix with a prefix explained in the table below.
{Silect^) equivalent for a metal-cased
a Silect 100-mil pin-circle equivalent for the metal-cased
2N3904 which
In
2N
2N2222) or perhaps
type (for example, the
different basing (lead locations)
a Silect 100-mil pin-circle equivalent of the plastic-encapsulated,
TO-92 package.)
In the case of the
A4T
prefix for
unmounted
transistor
all.
case, the specifications for the prefixed devices are as close to the registered devices as packaging will permit.
PREFIXES FOR REPACKAGED TRANSISTORS
A3T
Microsilect* (obsolescent, not covered
A4T
Unencapsulated transistor chips (not covered
in this
book) in this
book)
A5T,
A6T 3
& 2
TRANSISTOR
LEAD
1
2
Multifunction
Emitter
Field-Effect
Programmable Unijunction
TRANSISTOR Silect^ Package
LEAD
Multijunction
LEAD 3
Base
Collector
Source
Drain
Gate
Cathode
Gate
Anode
A6T LEAD
LEAD
1
2
Base
Emitter
LEAD 3 Collector
A7T,
A8T
A7T 1
23
TRANSISTOR
* Trademark of
4-a
Texas Instruments Incorporated
LEAD
1
2
LEAD 3
Multijunction
Emitter
Collector
Base
Programmable Unijunction
Anode
Cathode
Gate
TRANSISTOR TO-92 Silect* Package
LEAD
Multijunction
A8T LEAD
LEAD
1
2
Emitter
Base
LEAD 3 Collector
B2T
Unencapsulated beam-lead transistor chips (not covered in this book)
B3T
Beam-lead transistors, 100-mil pin circle (not covered
in this
book)
V B4T
Beam- Lead
I B5T
>--
D2T
transistors,
200-mil pin circle (not covered
in this
book)
Beam-lead transistors, plastic high-frequency
package
(not covered in this book)
I
Dual transistors, short-can version of
TO-78 package
Q2T
%»
Quad
transistors,
TO-1 16
plastic
dual-in-line
package
ORGANIZATION Data Sheets are organized
in
alphanumeric order with numbers taking precedence over
letters.
The exception to
this
is
that
derived types are placed immediately after the registered types from which they were derived.
CHIP-CHARACTERIZATION REFERENCE Transistor chip families are characterized in Section 5. Reference to the related chip family
corner of each data sheet,
if
is
made on the lower
right-hand
appropriate.
Exceptions:
•
Grown-junction bars are not characterized.
•
Bar-type unijunction transistors are not characterized.
•
When
the observed values of the characteristics of the basic chips are not applicable to specific devices because of
highly selective screening or special diffusions, chip-family references are omitted.
•
Transistor types containing
two darlington-connected chips do have the chip-family reference but
noted that while the characterization data does apply to the individual chips, darlington-connected pairs.
it
it should be does not apply directly to the
TYPE 2N1T7 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S
9
20
to
MARCH
B8896,
1968
beta spread
Spedficafcy designed lor high gain at high temperatures
mochanical data Welded case with glass-to-metal hermetic seal between case and Ml CONNKTIONS
INSUlATtD
MOM
maximum
absolute
1—0 MO
_. 0.040 (* O.0OSI 0.0)7 1+ 0.001 - OM1) DIA.
1.7 grams.
'
MAX.
D
INCHU
IN
25*C ambient
rating* at
is
u
|
—
L1AM
AU DWUNHON1
Approximate weight
CASI
0.4M MAX.
>
leads.
inct*) «*•»• advanced tsmpofanmo or, indicated!
45
Collector Voltage Referred to Base
Collector
Current
25
Collector Dissipation
I
100'C 150'C
V
150 100
[
50
at
•mparotura Maximum Range
Common
-6B*C
base) dOSlgn characteristics at TJ
=
25°C Met
Brakdown
BVcBO
Collsctor
ICBO
Collsetor Cutoff Current
Vottai* f
it 100* at
C,
150*C r
(except
l
Vcb-MV V C g- 5V V CB -
5V
E
e
-0
l
E
-0
I
e
l
E
feedback Vottife Ratio
Ves-
5V
l
£
lift
Currant Transfer Ratio
V CB - 5V
l
E
PG. NF
Power Gtin't
Vce -20V Vce - 5V V CB - 5V v ce - sv lg- 2.2mA
l
E
l
E
Col.
Output Capacitance (lmc)
R et
Saturation Resistance*
•Commoa
tmffloj
t«l
-
Ik;
«i
-
20*
JConvtntloMl
max.
l
E
l
E
l
c
-
-1mA -2mA -1mA -1mA - -1mA -5mA
IMM-Coaparod
30
42
25
120
-0.9
-0.925
80
0.4
to 1000
1.2
500
unit
do db
20
mc
4
w'
7
100 resistor,
*A *A *A Ohm Mmho X1(H
-0.953
35
ohm
+175'C
Volt
50
- -1mA - -1mA - -1mA
to
mW mW mW
Indicated]
45
10
l
Output Admittance
Noise Figure't
an
2
hob
Frequency Cutoff
mln.
-0
dealon conlor
Ie-0
!>,»
Input Impedincs
wh.ro advanced tomperahjrea
conditions
Ic-SOkA
V CB - 5V V C »- 5V
hib
u
mA
— 25 mA
Emitter Current at
V
IV
Emitter Voltage Referred to Base
200
1000 ept and
1 cycle
Ohm Band width
PRINTED IN U.S.A.
TexasINCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME IN ORDER TO IMPROVE DESIGN AN0 TO SUPPLY THE REST PRODUCT POSSIBLE.
POST OFFICE OOX S012
DALLAS. TEXAS 75»22
4-1
J
TYPE 2N118 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S
18 to
40
B8897,
MARCH
1958
beta spread
Specifically designed for high gain «t high temperatures
mechanical data Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight ROM
ALL CONNfCTIONS INSULATED
is
1.7 grams.
CASt
r
1-COLLECTC*
C4«
OMt
MAX.
1*0.0051
Pi
J
'
—
3 LEADS 0.017 1+0.003, - 0401) DtA.
AU
absolute
maximum
DIMENSIONS IN INCHES
25°C ambient
rating* at
[.«.pf wh.r. advancsci
45
Collector Voltage Referred to Base
1
Emitter Voltage Referred to Base Collector
25
Current
Emitter Current
at
junction
150 100 50
100°C 150°C
temperature Maximum Range
common base
mA
-25 mA .
Collector Dissipation at
V V
-o5°C
dosign characteristics at
1\
=
35'C
mW mW mW
+175*C
to
t.«.pi wh.r. odvanc.il tsmpstoffsi or. indkotsdi dsalon
tut Collector
Breakdown Voltage
IC-50VA
at 100°
C\
Vcb-30V Vcb- 5V
at 150°
C
V C B- 5V
Collector Cutoff Current
J
CMidrtiont
Ie-0
l
E
- -1mA - -1mA
--lmA
E
l
E
Frequency Cutoff
Output Capacitance (lmc)
Ib-
Saturation Resistance*
Common EmlttN
t«i
-
Ik;
Rt
-
20*
2.2mA
>A
e
l
Vce -20V Vce - 5V v C b- 5V Vcb- 5V
50
E
l
5V
Noise Figure*}
*A «A
l
V C( - 5V
Power Gain't
2 10
E
Current Transfer Ratio
l
E
l
E
l
E
l
E
Volt
-0 -0
E
l
Feedback Voltage Ratio
Output Admittance
5V sv
nth
max.
45
-0
l
VcbVcbVcb-
Input Impedance
csntsr
mln.
- -1mA - -2mA - -1mA
0.4
250
25
-0.948
--lmA - -1mA
lc-5mA
JConvtnBoMl Notte-Comptrad
42
30
-0.96
rim
ptnho
1.2
xio-«
1000
-0.978
39
db
20
db
5
mc
7
w»'
100
to 1000
Ohm
80
relator. 1000 cpt
Ohm
200
e*d I cycle
Med
width
PRINTED IN U.S.A.
4-2
Instruments Texas INCORPORATED POST OPPICS SOX SOU
•
DALLAS, TBXAS 7S2M
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPftT TNE REST PRODUCT POSSIIiE.
TYPE 2N118A N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 73898, MARCH 1968-REVISED MARCH 1973
86
18 to
beta spread
temperatures
Specifically designed for high gain at high
mechanical data Welded
case with glass-to-metal hermetic seal between case and leads. Approximate weight
ill
ROM
CONNECTIONS INSULATED
1.7 grams.
u
CASE
'1-COUKTC* MAX.
0.382
is
J —0.365 MAX. 1.5 C±0.03M-H
—
3=J— absolute
maximum
ratings at
—
0.192 (±0.0101
3
-
AU
r—
0.04S (± 0X1051 0.017 (+ 0.002, - 0.001) DIA.
UADS
0.300 MAX.
I
DIMB4SIONS IN INCHES
25°C ambient c«opt when
a»
advanced r*i»p*ratvn»
indicated]
45
Collector Voltage Referred to Base
Collector
25
Current
Collector Dissipation
at
mA
-25mA
Emitter Current
at
V
IV
Emitter Voltage Referred to Base
100"C 150°C
150 100
\
I
50
f
mW mW mW
junction temperature
-85"C
Maximum Range
common base
design characteristics at
Tj
=
25°C tetst
Breakdown Voltage
BVcbo
Collector
'CB0
Collector Cutoff Current Jat
100°Cr
at 150° hit
Input Impedance
h b
Output Admittance
Feedback Voltage Ratio
hfb
Current Transfer Ratio
PG,
Power Gain't
Hf
Noise Figure*}
Cob
Output Capacitance (lmc)
Res
Saturation Resistance*
Frequency Cutoff
'Common Em tt«
tR|
-
lk;
RL
-
c
=
B
50*A
l
=
E
dosign contor
min.
-0
max.
45
5V
5V 5V 5V
l
E
=
= -1mA E - -1mA E - -1mA E - -1mA E - -2mA E - -1mA Ie - -1mA E - -1mA
42
20V
5V 5V 5V
400
50
l
l
-0.948
l
39
l
20
lc
10
(.A
1000
/^
Ohm ftmho xio-«
-0.989
db db
mc
8 7
- 5mA
tConventional No«se— Compared to 1 100
1.2
-0.975
l
2.2mA
*A
80
0.4
l
5V
2
50 30
Ie
wilt Volt
Ie-0 Ie =
30V
+175°C
wh«r« advanced temperature* are indicated)
conditions
- 5V
= VetV CB V CB = l
20k
=
V CB V CB V CB V CB -
V CB V CB V CB V CE
h,b
U
PRINTED IN
q
l
[except
to
100
ohm
rest stor,
1000 cos
20 200
nd
1 cycle
w' Ohm ben d width
U.S.A.
Texas INCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN
AND TO SUPPIY THE
BEST PRODUCT POSSIBLE.
POST OFFICE BOX 5012
•
DALLAS, TEXAS 79222
4-3
J
TYPE 2N119 SILICON TRANSISTOR
GROWN-JUNCTION
N-P-N
BULLETIN NO. DL-S
36
86
to
ca
^"J"^ ^^ ^^ glass.l0.meta
1968
temperatures
hermetic seal between case and leads. Approximate weight
i
MARCH
beta spread
Specifically designed for high gain at high
mac on
S8899,
is
1.7 grams.
FtOM CASE
ALL CONNECTIONS INSULATED
O.JM MAX.
J —0.3*4 MAX.
—
I
J
0.102 (£0.0101
(±0.012)
1—0.300
0.040 li 0.00513 LEADS 0017 1+ 0.001, - 0001) n
1
MAX
All DIMENSIONS IN INCHES
absolute
maximum
25°C ambient
ratings at
whm
Uxe.pt
advanced temperatures or. indicated)
45
Collector Voltage Referred to Base
Emitter Voltage Referred to Base Collector
*
25
Current
150
Collector Dissipation
at
junction
\-
100
100°C 150°C
\
5°
j-
temperature Maximum Range
-65 C
bos* design Characteristics at
Tj
=
25°C
texcept whor. advanced temperature*
Collector
'CBO
Collector Cutoff Current
[
l
V CB - 5V
l
at
Vcb-
C 150° C^
-0 E -0 E =0 E -0
l
E
Output Admittance
Vcb-
l
E
- -1mA - -1mA
--lmA
V C b- 5V V CB - 5V
Power Gain't
Vce-20V
Noise Figure*!
V CE - 5V V C b- 5V V C B- 5V
Frequency Cutoff
Crt
Output Capacitance (lmc)
Res
Saturation Resistance*
Emitter
tRc
-
'«:
>l
'
1
B
-
2.2mA
4.175-C +175 I.
to
nit Volt
«A mA mA
50
l
Current Transfer Ratio
max. 2
5V
42
30
0.4
400
50
Ohm
80
/imho
1.2
X10-6
1000
l
E
l
E
l
E
- -1mA - -2mA
42
db
l
E
1mA
20
db
l
E
--1mA
6
mc
l
E
- -1mA -5mA
7
M«f
lc
IComentHxul Noltt-ComparM'
-0.9735
-0.98
100
to 1000
ohm
mW mW mW
indicated]
10
V CB - 5V 5V
an
45
E
Input Impedance
U 'Common
l
at 100°
Feedback Voltage Ratio
PG, NF
- 50M A Vcb-SOV lc
doslgn cantor
mln.
fast' conditions
Breakdown Voltage
BVCBO
hjb
mA
- 25 mA
Emitter Current
at
V v
resistor.
-0.989
Ohm
200
1000 cps and
1
cycle
hand width
PRINTED IN U.S.A.
Instruments Texas INCORPORATED POST OFFICE BOX 9012
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANV TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
I
TYPE 2N120 N-P-N
GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 58900, MARCH 1958
76
333
to
beta spread
Specifically designed for high gain at high
mechanical data Welded case with
glass-to-metal hermetic seal
ROM
ALL CONNECTIONS INSULATED
between case and
leads.
temperatures
Approximate weight is 1.7 grams.
u
CASE
1
JM
MAX. 1
~o.au MAX.
—
—1.5 iso^aat
0.192 (±0.010* ' 0.048 (± 0.005) __ 3 LEADS 0.017 (+0.003, - 0.001) MA.
1
0.190 MAX.
I-
[
|
1
absolute
maximum
ALL
WMBBtONS
IN INCHES
25°C ambient
ratings at
when
texc.pt
advanced temperatures are Indicated]
Collector Voltage Referred to Base
45
Collector
25
Current
Collector Dissipation
at
mA
—25 mA
Emitter Current
at
V
IV
Emitter Voltage Referred to Base
100°C 150°C
150 100
}•
I
50
\
mW mW mW
(unction temperature
-65°C
Maximum Range
common base
design characteristics at T
=
25°C
to
+ 175 C ,,
[except where advanced temperaturet are Indicated!
design mln.
test condition* 50M A
lt-0
30V
Ie
atlOO°CJ
VC b = V CB -
5V
l
E
atl50°CJ
Vcb=
5V
l
E
5V
l
E
5V
l
E
= = -lmA - -1mA
5V
l
E
--lmA
l
E
Breakdown Voltage
BVcbo
Collector
'CBO
Collector Cutoff Current
J
1
c
h rt,
Input Impedance
has
Output Admittance
h,b
Feedback Voltage Ratio
hit
Current Transfer Ratio
Vcb= Vcb-
PG, NF
Power Gain't
V CE - 20V
Noise Figure*}
Vce =
5V
fab
Frequency Cutoff
5V
l
C„b
Output Capacitance (lmc)
5V
l
"cs
Saturation Resistance*
VcbVcbe -
2.2mA
lc
*Common
Ernitter
tUf
-
Ik: R L
V CB V CB
-
l
20k
5V
l
l
max.
-0
{Conventional None— Compared to
*A *A „A
2 10
50 42
30
400
50
-0.987
-0.99
Ohm
80
0.4
1.2
-0.997
db
20
db
7
mc
7
100
1
000
ohm
^mho xio-«
1000
42.5
- -1mA = 5mA
unit Volt
=
= —1mA E - -2mA E = -1mA E - -1mA E
center
45
Mlif
Ohm
200
ret stor, 1000 cpsi and
1
cycle ba nd width
PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO IN
MAKE CHANCES AT ANT TIME
ODDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
POST OFFICE BOX 5012
DALLAS. TEXAS 73222
4-5
1
'
TYPES 2N243, 2N244 N-P-N GROWN-JUNCTION SILICON TRANSISTORS BULLETIN NO. DL-S 612238, DECEMBER
1961
Oval Welded Package
mechanical data The
transistor
Unit weight
is
is
in
an oval welded package with glass-to-metal hermetic seal between case and leads. 1 gram. The mounting clip is hardware supplied with the transistor.
approximately
All LEADS ARE INSULATED
Ati« D,A^ a " 3 +0.005 _..
-0.54S±0.015t
-0.000
FROM THE CASE
+0.002 _" 0017 u
^
-COLLECTOR
-0.001
0.430
.T
±0.020
-0.192
3^
0.048 :t
±0.010
/ /-USt
0.010—
0.110
±0.015
-0.305*0.010
TTI I
'absolute
AU
025 =t 0.003
.(
0.JM 0.220
maximum
± 0.020
*
DIMENSIONS IN INCHES
FO" RECOMMENDED ASSEMBLY WITH MOUNTING CLAMP
ratings at 25°C case temperature (unless otherwise noted)
60 v
Collector-Base Voltage
60 ma
Collector Current
750
Collector Junction Operating Temperature
+150°C
—55° to +
Storage Temperature Range
ROTE:
•JEDEC
4-6
1.
mw
Total Device Dissipation (see note 1)
Derata linearly to 1S0°C
con
t«natratare at Hit ratt ol i
mw/°C.
registirtd data
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 7S222
1
50°C
TYPES 2N243, 2N244 N-P-N GROWN-JUNCTION SILICON TRANSISTORS
electrical characteristics at
23°C case temperature
parameter
(unless otherwise noted)
fyp»
t«*t condition*
cm
(ollsdor Cutoff Currant
Icso
Collector Cutoff Currant
BVcn
CeJIettor-Base
BVcco
CoHoctor-Emittor Iraakdown
Vk
Boso-Emltttr Voltage
fCE(»t|
K CoOMtor-frnfthr
hft,
AC Common-Base Forward Currant
Vc.
Transfer Ratio
f
AC Common-Saso Input Impedance
Vci
Vc.
= 30v,
= 130°C = 50 /io. lc = 100 jua, = 3 ma, = 3 ma,
=o 6 =
u
All
l
All
mln*
typ
max* 1
15
unit
A" *"
Tc
Iraokdom
Voltogs
VoHag*
lc
li
Saturation
li
= = lc = 20 ma lc = 20 ma l,
AH
l.
All
60
V 60
y
All
1
All
350
¥
ohm
Resistance
hit
f hrt,
AC Common-Bast Reverse Voltage Transfer Ratio
= =
Vci ==
f
= 1
= l
= 1
10v,
= —5 ma
Ie
kt
2N243
-0.9
-0.94
-0.968
2H244
-0.961
-0.97
-0.989
12
30
v,
Ie
= —S ma
AH
10»,
U
= —5 ma
Al
c
=
10
ohm
kt
60x10-'
300x10-'
kc
functional tests at 23°C case temperature Gp.
Common-Emitter tower
Gam
(See Circuit Below)
= 28v = ioon, = lkt,
VC i
l
«9
H.=l
f
POWER GAIN
r^ni
20ma
All
30
dh
kfl
V, = 0.2v
TEST CIRCUIT
SCUrft
NOTE: Gp. =
10
*S®
•JEDECrttlitmt-feti
P
g
PRINTED IN U.S.A. Tl or
cannot assume any responsibility tor ony circuits shown rrptfienl thol they art free from potent infringement.
TEXAS INSTDUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE (EST PRODUCT POSSI8LE
TexasINCORPORATED Instruments PO«T OFFICE ar» 9012
DALLAS. TIXAS 79323
4-7
TYPE 2N332
GROWNJUNCTION
N-P-N
SILICON TRANSISTOR
BULLETIN NO. OL-S 59103E, MARCH 1989
Beta From
1
to
20
designed for high gain at high temperatures
Specifically
Welded case with
9
glass-to-metal hermetic seal between case and leads. Unit weight is approximately dimensions and notes are applicable.
JEDEC TO-5
gram. All
ALL tlADS MSVLATtD flOM
0.100
CUE
MIN -
MTAKI 0* OUTUM
•
vw
TWS ZONA OPTIONAL
"fltlnfll
Ot 2S
C wnblmt
[except where advancad tamparature» are Indicated]
Collector Voltage Referred to Base
at at
100°C 150°C
25
mA
150 100 50
}
- 65°C
Maximum Range Tj
V
— 25 mA
}
bat* dMlgn
45
IV
Emitter Voltage Referred to Base Collector Current Emitter Current Device Dissipation }
=
25°C
mW mW mW
+ 175°C
to
[except where advanced tempereturei are indicated] deelcjn
BVc» ICK>
h,bt
h*t
Collector Breakdown Voltage Collector Cutoff Current ^ at 100* C^ •t 150° C}Input Impedance
hnt fat
Currant Transfar Ratio Noita Figure*! Fraquancy Cutoff
C.b
Output Capaeitanea
NF
(
Saturation Reliitence*
Res
'Common
Emitter
tf=Uc
-
Imc)
50/iA
1
30V
(Conventional
i-
= = >b ,» = = = = c =
Volt
45
1
i
t
1
1
1
1
1
!
1
,
, i
, ,
Nolle—Compared
MA MA MA
2
i
=
SV SV SV Vct= V a = SV Vc- SV V C1 = SV Vci= SV 1, = 2.2mA Vc.
V C i=
Output Admittance Feedback Voltage Ratio
hrbt
le
Vci
V„ = SV Vci- SV
10
— mA -ImA -ImA -ImA — mA - mA - mA I
30
55
-0.9
1 |
-0.925 20
-0.963
70 reitltor,
Mmho xio-«
500
10
|
ohm
Ohm
1.2
195
db
30
mc
&
1
5mA to 1000
50 80
0.5
MMf
30 200
1000 epi and
I
Ohm cycle
band width
PRINTED IN U.S.A
4-8
Instruments TexasINCORPORATED FOOT OFFICE
EJOX S012
DALLAS. TEXAS 78228
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANT TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPE 2N333 N-P-N GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-8 691036, MARCH 1988
Beta From 18 to Specifically
mechanical data Welded case with 1
gram. All
40
designed for high gain at high temperatures
glass-to-metal hermetic seal between case and leads. Unit weight is approximately applicable.
JEDEC TO-5 dimensions and notes are
ALL LEADS INSULATED ftOM CASE
-IJ
MM —-j I
DIA
0.100 -H
Jl
*T"
0.100
MWCPU „.
OtTAH.1 Of OUTUNI IN-t-H THII ZOftt OfTtONAL II
I
Ot 25
C OmblMt
/
[exeapt whore advanced temperaturei art Indicated]
Collector Voltage Referred to Base Emitter Voltage Referred to Base Collector Current
Emitter Current Device Dissipation
" at
45
V
25
mA
IV
_25 mA }
lgO°C 150°C
'
'.
i
\ }
150 100
50
m\(r
mW mW
tampvftttiiic
— 65°C
Maximum Range
DOM
dorian dnraetarbtlct Ot Tj
BVcm loo
Collector Breakdown Voltage Collector Cutoff Currant}' at 100* at ISO*
C^ Cf
h„t h*t h»t
Input Impedance Output Admittance Feedback Voltage Retlo
hh l
Currant Trantfar Ratio Nelia Figure** Frequency Cutoff Output Capacitance 1 1 ma) Saturation Railttanea*
NF fa.
C« Ret
*Common
=
Emtttar
tt—
I
kc
t
2S*C
Is
Vet
.
VetVetVetVetVetVetVetVetVetIt
-
to
+175°C
[exeept where advanced temperatures ere Indicated]
50»A
li-O
30V
•
5V
•
SV 5V SV SV SV SV SV SV 2.2mA
46
i-O — ImA — — mA 1
1
Volt
30
ss
> 1
1
1
370
-0.94S
-0.»6 20
— ImA -ImA
S 10
SmA
70
Conventional Nolta—Comparad to
ION
SO 10
0.S
I
-ImA -ImA -ImA
«A *A *A
2 10
Ohm
1.2
1000
jimhe
XI0-«
-0.«7* db
30
me «tf
30 200
otim retlttor, 1000 epi and
I
Ohm cycle band wldrt
PRINTED IN U.S.A.
TexasINCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANV TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
POST OPFICK BOX 80 la
•
DALLAS, TEXAS 78232
4-9
TYPE 2N334
GROWN-JUNCTION SILICON TRANSISTOR
N-P-N
BUULETIN NO.
mechanical data Welded case with 1
gram. All
between case and leads. Unit weight dimensions and notes are applicable. AIL LEADS INSULATED FIOM l.S
0.240
MM —-|
is
approximately
USE
0.I0O-H
J"
I
-j
°il»
1989
designed for high gain at high temperatures
glass-to-metal hermetic seal
JEDEC TO-5
MARCH
90
Beta From 18 to Specifically
DL.-S 591037,
335
_L _i_ 0.100
"^
0.200-J
....
|
MIN
DfTAAS Of OUTUNf 1WS ZONi omoNM.
absolute
maximum
25°C ambient [« n pt
ratings at
whara advanced tamparaturai ara Indicated]
Collector Voltage Referred to Base Emitter Voltage Referred to Base
45
Current Emitter Current Device Dissipation
j»
J
Collector
at at
~» } }
"
m m*
J;™ 100 50
}
100°C 150°C
V
m*
mW mW
junction temperature
-65°C
Maximum Range
Common base
design Characteristics at Tj
=
25°C
[axcapt whara advanead tamparaturai ara indicated]
la.
feet eoaalflea.
Collector Breakdown Voltage Collector Cutoff Currant at 100° C}
BVck
at
150-C}
h.bt
Input Impadanea
rwt
Output Admittance Feedback Voltage Ratio
h»t
Vc« Vc. Vc=
Currant Transfar Ratio Noiio Figure* t Frequency Cutoff
hibt
NF W C*
Output Capacitanea (Ime)
Ret
Saturation Resistance*
•Common
Emitter
t
1=1 kc
= Vc, = V« Vc. = Vc = Vc. = Vc. = lc
Vc.
=
1.
•>
+175°C
to
SOftA
30V 5V SV SV SV SV SV SV SV SV 2.2mA
= = = = 1, = m = = = lc =
daiMja aaalar
1,
li
li
1, 1,
M M Ohm
2 10
li
SS
30
o.s
1
-0.94S
-0.»75 20 10 10
<
1
SmA
70
tConnirtlonel Nolle—Comp.r.d to t«0»
ohm rnhtor,
I
MO
1.2
Mm ho
1000
3S0
1
p=A
SO (0
1.
-ImA - mA - mA -ImA -ImA -ImA - mA
a* Volt
li
1.
mat.
45
li
— 0.9S9 db
30
me 30 200 to. and
I
*M«f
Ohm cycle
bam) wWth
PRINTED IN U.S.A.
4-10
Instruments Texas INCORPORATED POBT OPPICK BOX S012
•
DALLA*. TEXA8 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSHRIE.
TYPE 2N335 N-P-N
GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 591038, MARCH 1959
Beta From 36 to
designed for high gain at high temperatures
Specifically
mechanical data Welded case with 1
gram. All
90
glass-to-metal hermetic seal between case and leads. Unit weight is approximately dimensions and notes are applicable.
JEDEC TO-5
All LEADS IKSUUTED FROM CASE
0.240
1~
-3 couEcrot
-
0.370
"T 0.335
0.335
5305°
OIA
_
-1—
I
0.100
I !
-M^OOW IN—
3
II
«*
001°
t—
AU
DIMENSIONS All
IN MCHI5 UNLESS OTMttWIM
SPECmCD
absolute
maximum
25°C ambient
ratings at
|. KC . P ,
wh . r , „dv.„c.d t.m P .rat U r. s
ar. i„d xatad
|
Collector Voltage Referred to Base
1
25
at
100°C 150°C
V mA
-25 mA
.
at
V
15
Kmiller Voltage Referred to Kaae Current Emitter Current Devi Dissipation } Collector
150 100 50
} }
mW mW mW
|unction temperature
Maximum Range
common base
-65°Cto + 175°C
design characteristics at T,
=
25°C ,„„„,
„/,.„ 4 dv.„„d t.m P .,.tur,, .re indicated! design center
test conditions
BVckj 'cio
h. b f
h ob t h rb t
Collector Breakdown Voltage Collector Cutoff Current}at 100° CJat 150° C^ Input Impedance
Output Admittance Feedback Voltage Ratio
f«b
Current Transfer Ratio Noise Figure*' Frequency Cutoff
C ob
Output Capacitance time)
R«
Saturation Resistance*
h, b
t
NF
Common
Emitter
t
f=l
he
= 50M = 30V = 5V = 5V = 5V = 5V = 5V = 5V V« = 5V Vc. = 5V Vc. = 5V = 2.2mA lc
Vc. Vc. Vc. Vc. Vc. Vc. Vc.
1.
t
Conventional Noise
= = = = — — ImA = — mA — — ImA = — mA — — ImA = — mA c — 5mA i
45
Volt
s
2
.
10
t
so 80
e
v
e
1
e
0.3
600
k l
E
-0.O735 2
e
1000
ohm
resistor,
Ohm
1.2
limho
XI0«
1000
-0.98? 30
db
10
30
«rf
70
200
1
1
to
-0.98 20
1
e
—Compered
55
30
v
M
«A MA
mc
1
1000 cps and
I
Ohm cycle band width
PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IK
ORDER TO IMPROVE DESIGN AND TO SUPPIV THE BEST PRODUCT POSSIME.
POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
4-11
TYPE 2N336 TRANSISTOR N-P-N GROWN-JUNCTION SILICON BULLETIN NO. DL-S 591039, MARCH 1959
Beta From Specifically
mechanical data Welded case with 1
76
to
333
designed for high gain at high temperatures
.
weight glass-to-metal hermetic seal between case and leads. Unit TO-5 dimensions and notes are applicable.
approximately
is
JEDEC
gram. All
UMS
M.L
IHSUIMEB f tOM USE 0.100—
-
0.340
3
COLLECTOR
T SESoTjT 3 5 555s
1
t> .
_L 0.100
M1N
1
^
IN—*— OETAILS OF OUTLINEE IN THIS ZONE OPTIONAL
o.oo9
ALL DIMENSIONS ARE IN INCHES
UNLESS OTHERWISE
absolute
maximum
25°C ambient
ratings at
[except where advanced temperatures are indicated]
4^
Collector Voltage Referred to Base
Emitter Voltage Referred to Base Collector Current Emitter Current Device Dissipation } at at
100°C 150°C
^
oc
a
oi. x _,£> m£. m™
J=9
J 00
}
50
}
mW mW ,
junction temperature
- 65°C
Maximum Range
common base
desicjn Characteristics at T-
=
25°C
lew
Collector Breakdown Voltage Collector Cutoff Current,at I00«CSat 150° C\
h,„t
h. b 1
h»t hot
Input Impedance Output Admittance Feedback Voltage Ratio
fa,
Current Transfer Ratio Noise Figure* I Frequency Cuto«
C,
Output Capacitance (Imc)
Re,
Saturation Resistance*
NF
•Common
Emitter
t
f=tkc
Ic = 50M Vc. = 30V V C1 = SV SV Vc, = 5V Vc. = = SV Vc, Vc. = 5V V„ = 5V V« = 5V V„ = SV 5V Vc. = = 2.2mA I.
+ 175°C
[except where advanced temperatures are indicatedj win.
test conditions
BVco
to
= U = = = != -lmA != -lmA Is
l
design center
Volt
l
l
l
E E
=-lmA =-lmA
30
55
l
E
Ic
-0.987
-lmA = -lmA
-0.99
re.l.tor,
,
(Jmho Xl °
-.»« 30
db
30
70
200
W Ohm
3
= 5mA
ohm
1.2
,00 °
10
20 1
=-lmA
(Conventional Noi.e—Compared to 1000
M M Ohm
50 80
0.H 700
l.= I,
MA.
2 10
t
Ie l
""
mem.
45
1000 cps end
I
mc
cycle bend width
PRINTED IN U.S.A.
4-12
Instruments Texas INCORPORATED POST OFFICE BOX SO 12
DALLAS. TEXAS 7S222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME POSSIBLE. IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT
TYPE 2N337 N-P-N
GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO DL-S 69355, MAY 1960-REVISED APRIL 1969
FOR SWITCHING AND GENERAL PURPOSE APPLICATIONS
• Low Collector Capacity • High Gain at Low Levels
• Guaranteed 20-55 DC Beta • 10 mc min Alpha-Cutoff mechanical data
Welded case with glass-to-metal hermetic seal between All JEDEC TO-5 dimensions and notes are applicable.
and leads. Unit weight
case
is
approximately
1
gram.
ALL LEADS INSULATED FROM CASE
-3 COUKTOI
T
-1.
0.100
I
MUM
I
O.I»
M
IN-M
DETAILS Of OUTUNf THIS ZONf OPTIONAL *** !
I
0.0»
L-KATMO
MMfNSIONS ARi M INCHH
0Jtl *
UNUH OrHHWIK
abwhrtt maximum ratings at 25°C ambimt tamparatura (unlets otbarwisa noted)
45 v
Collector-Base Voltage
30 v 20 ma 20 ma
Collector-Emitter Voltage
Collector Current Emitter Current
1mw/*C
Total Device Dissipation (Derate
for
Advanced Temperatures)
—65°C
Storage Temperature Range electrical characteristics at
2S°C ambient temperature
»»CK>
Collector-Emitter treeMewii Voltofe
«»HO
Emitter-Rase Rreokfava
Colltctof Reverse Correal
Collecter-laio
ItHttai
»
"rb
A-C Cantataa-Base tovone-Voriaaa Traatfar lalia
Ig
K\
A-C Commaa-Emirler Ferwerd Curraal Traatfar Ratio
10
1
Common-lasa Alpka-Cataff Frequency
2.S
1
Common-Rose Oulpat Capacitance
ob
1
E
l
'cetseti* 0-C Commen-Emiffer Sofarefien Resistance
1
h' M" T
30
T
I
T
30
so 0.2
too
1
Ferorard-Corroftt TraMffar Retie
D-C Fonrard-Carraot Traasfar Ratie
c
100
unit
4!
1
»«*
u
1
max 1
C
E
>E
A-C Comaten-Base lapot Impedance A-C Cammoii-lafa Dotpot Admittance
Comman-laH
l
typ
E
l
Valla*
"ib
A-C
l
>E
Volteae
**.
"ft.
min
conditions
to>st
= = 20v = » 'A = 150° »CI = 20> = 50 M = 'c =» lc = 100 Ma = » Ma C=» = — mo = Uc v c ,= »v — ma = Ikt 6 == »C.= »> — ma = lkc E = »CI = 20> = — ma = lk< »CI = 20> = = St ma c »CS — ma = mc E = 'C» = 20t — ma E = »c.= 20. = Imc 6 = »C.= »T ma c = 10 on '.= »«
Carnal
Colliclor Reverie
125mw +150°C
(unless otherwise noted)
paramotors
•cm 'do •»«o
to
-0.95
M
ohm
1
^mho
2000
xio-*
-0.9IS
10
5S
14
22
db
10
n
mc
2
3
00
ISO
jiicf
ahm
switching characteristics Tara-an Tima [Includes delay tima
too
(t
0.05
d )]
Staroga Tima Fall
•f *
Saa Test Circuit
0.02
tima
0.01
Thorn Baramtlers mutt bt manure*, usinf pulti tMhnrque*.
fW
=
300 /t»c. Duty Cycli
<
li»ec
2%.
test circuit 3|(tsc-»|
£! 10
K 10J v
;9
PRINTED IN U.S.A. Tl
cannot assume any responsibility for any circuits shown
or
represent
that
they
ore
tree
from patent infringement.
TEXAS INSTRUMENTS RESERVES THE (TIGHT TO MAKE CHANCES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT P0SSI81E.
Texas INCORPORATED Instruments POST OFFICE BOX S012
•
DALLAS. TEXAS 75222
4-13
TYPE 2N338 N-P-N
GROWN-JUNCTION SILICON TRANSISTOR BULLETIN NO. DL-S 73356, JUNE 1960-REVISED MARCH 1973
FOR SWITCHING AND GENERAL PURPOSE APPLICATIONS
• Low Collector Capacity • High Gain at Low Levels
• Guaranteed 45-150 DC Beta • 20 mc min Alpha-Cutoff I
mechanical data Welded case with
hermetic seal between case and leads. Unit weight dimensions and notes are applicable.
is
glass-to -metal
JEDEC TO-5
gram. All
1
ALL LEADS INSULATED FIOM
approximately
USE
0.100—
I
h-
0.100 MIN Of OUTLINE INZONE OPTIONAL
DETAILS THIS
DIMENSIONS ARE IN INCHES UNLESS OTHERWISE
SPECIFIED
maximum
absolute
ratings at
(unless otherwise noted)
25"C ambient temperature
45v 30v 20 ma 20 ma
Collector-Base Voltage Collector-Emitter Voltage
Collector Current Emitter Current
Total Device Dissipation (Derate
1mw/°C
for
—65°C
2S°C ambient temperature
electrical characteristics at
Collector. Rtvorst Current
Colletler-lne Ireakdown Voltage
»CK>
WCEO
Collector-Emitter breakdown Voltage
Emitter-Base Breakdown Voltage
"Eio h ob
A-C Common-Base Output Admittance
fc
A-C
rb
Common-law
»ct
20v
l
SOjuo
l
Vc.= »C.= »C.=
Reverse-Voltage Transfer Ratio
A-C Coflimoa-Base Forward-Current Tramftr Ratio
"fb
I
«E
A-C Common-Base iRpul Impedance
"ib
»c.=
20»
= >c = = •c = »Ci =
I00
M.
l, l
»>
lg
1
20v
l
1
20 »
l
20*
l
Sv
l
0-C Forward-Current Transfer Ratio
K\
A-C Common-Emitter Forward-Current Transfer Ratio
Vc
,=
20 v
l
fab
Common-late Alpha-Cutoff Frequency
»C.=
20 v
l
pot
J.
roohtorod data
1078
TexasINCORPORATED Instruments POST OFFICE BOX S012
•
DALLAS. TEXAS 75223
4-15
TYPES 2N339 THRU 2N343 N-P-N GROWN-JUNCTION SILICON TRANSISTORS * functional
tMto at 2S*C cat* tamparatura mln
2N339 2N342
30
db
2N340
30
db
2N341
30
db
= 2Bv; c = 20ma; = lkfljf = lkc V, = 0.2v Vci = 45v; lc = 15 DM; Dl = 2kflif = lkc V, = 0.2v Vci = 67.5 v, c -10ma = 4 k n = kc V, = 0.2v Vci
l
H.
6„
Common-Emlttw *owir Gain
f
;
'•
TEST CIRCUIT
c
ltl
A
B i
unit
1
POWER GAIN
100
•V"
2N343
l
Ki.
max
•ypo
tort conditions
parameter
n SOff
A
>22
O^IOlog Htllll Rl \v,, 'oo
-1
iimv vec
n
5 ^s, duty cycle < 2%. w Waveforms are monitored on an oscilloscope with the following characteristics: t < 4 ns, R > 100 kn, r in O-T < 1.8 nC when the transistor turns off monotonically as shown by the solid line.
Cj n
PRINTED IN U.S.A. Tl
cannot assume any responsibility lor any- circuits shown
or
represent
that
they
are
tree
from
patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN ANO TO SUPPLY THE REST PRODUCT POSSIBLE.
TexasINCORPORATED Instruments POST OFFICE BOX 5012
DALLAS. TEXAS 7S222
4-19
TYPES 2N489 THRU 2N493. 2N489A THRU 2N493A, 2N489B THRU 2N493B P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS
BULLETIN NO. DL-S 733190, OCTOBER 1962-REVISED MARCH 1973
Designed for Medium-Power Switching, and Pulse Timing Circuits
Oscillator
• Highly Stable Negative Resistance and Firing Voltage • Low Firing Current • High Pulse Current •
Capabilities
Simplified Circuit Design
'mechanical data Package outline
is
similar to
JEDEC TO-5
All LEADS INSULATED
except for lead position. Approximate weight
NOTES
FROM CASE.
A.
This zone
matic
•0U1UM
is
one gram.
is controlled foi auto-
handling.
The
variation in
actual diameter within this zone shall
not exceed B.
010
Measured from max. diameter of
the actual device,
C.
i
The specified
lead diameter ap-
plies in the zone between
050 and
0.250 from the base seat. Between 0.250 and 1.5maximum of 0.021 diameter is held. Outside of these zones the lead diameter is not controlled.
DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED.
*
maximum
absolute
ratings at 25°C free-air temperature (unless otherwise noted) 150°C Junction Temperature
Emitter-Base Reverse Voltage below Interbase Voltage
RMS
Emitter
Current
Peak Emitter Current below 150°C Junction Temperature Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Total Device Dissipation at (or below) 25°C Free-Air Temperature, Stabilized (See Notes Operating Temperature Range Operating Temperature Range, Stabilized (See Note 4) Storage Temperature Range Lead Temperature K« Inch from Case for 10 Seconds
NOTES
maximum
interbasa voltage see Figure
I.
For
2.
Derate linearly Is 140°C frit-air temperature at the rate of 3.9
3. Derate linearly le
175*C
1
free-air temperature at the rate of 4.0
mw/°C. mw/°C.
4. Total interbase power dissipation must be limited by external circuit.
* Indicates
4-20
JEDEC
registered data.
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
60 jr See Note ^1 70 ",a
3, 4)^
.
J Kn 450 600
m mw
_65 °^ ,0 ]^° ? -rjj^CfolnC - 65 C to '75 C 2
TYPES 2N489 THRU 2N493. 2 N 48 9 A THRU 2N493A. 2N489B THRU 2N493B P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS
25°C
'electrical characteristics at
PARAMETER 'n
V
temperature (unless otherwise noted)
free-air
TEST CONDITIONS
Static lattreait Reslstanta
»nr
luttimk Standoff lull
'uimod
MadalalM' laltrban Carnal
'ebo
Emitttr Rtvarsa Cnrranl
= ".
Vn
„=10»
Sm
Fijor. 5
'e
=«
Tj
=
10 »,
»»!.=»«
VEIHutl
Emitttr Oait-Oaa
4.0
47
4.0
kfl
2N490, 2N492
nk Pain
=»«.
»,
=ȴ
Sm
Flgurt 4
Voltaaa
«K
M
r
=
'"0
4 I
(o
-0.2
M«
-20
m /«
12
12
<
4.0
4.0
V
2H491, 2N492
5.0
4.3
4.3
a
5.0
4.4
I
All
Typ«
All
Typti
1
4.4
• 3.0
3.0
V
ma ¥
1
-25"C,
(TA
-I
ma
— INTERBASE VOLTAGE RATING CURVE — STATIC INTERBASE RESISTANCE — kiL
FIGURE
3
-20
22
-2
5.0
2K49)
"on
-2
2N4N
2N439,
Sataratiaa Valtagi
"nil
UNIT
4.7
#
Paak-faial Emitttr Carnal
Vailti-filat Emitttr Carnal
MAX
41
150 C
1,
ly
B SERIES
MAX MIN
4.7
JO
1
SERIES
MIN
2N439, 2M491, 2N493
= ma j = »« = «». I„=0 V nE = 30». I„=0
V Bi,
A
PARENT SERIES MIN MAX
TYPE
6
5 I
I
I
I
I
VM „ =3.1
7
8 I
I
I
9 I
L_l
10 I
12
11 I
i
t
i
i
140°C 70
40 Vajni™.,— MAXIMUM ALLOWABLE INTERBASE (FOR 40-mw EB, DISSIPATION) 60
$Far stoMIInd aaarallaa martlaly tamatralart
30 2010
50
««
VOLTAGE
—v
by 1.25 (i.a, 175/140)
•Mlcatai JEDEC ragManf aata
TexasINCORPORATED Instruments POST OFFICE BOX 8012
DALLAS. TEXAS 7S222
4-21
TYPES 2N489 THRU 2N493. 2N489A THRU 2N493A, 2N489B THRU 2N493B P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS PARAMETER MEASUREMENT INFORMATION
—* In Base 2 (B2)
Emitter (E) »
,
.
Xr. Base
n— FIGURE
2
1
(Bl)
\
1
!
AlBl
1
!
i
FIGURE
-UNIJUNCTION TRANSISTOR NOMENCLATURE
FIGURE 4
—
OB
,
STATIC EMITTER CHARACTERISTIC CURVE
3-GENERAL
TEST CIRCUIT
« — Intrinsic
Standoff Ratio
of the peak-point voltage,
V B11
+
Vf,
where V f
is
—
This
parameter
is
defined in terms
=
by means of the equation: V p TJ about 0.36 volt at 25°C and decreases V,,,
with temperature at about 2 millivolts/deg.
used to measure TJ is shown in the figure. In this cirR 1r C, and the unijunction transistor form a relaxation oscillator, and the remainder of the circuit serves as a peak-voltage
The
circuit
cuit,
detector with the diode D, automatically subtracting the voltage
VF
.
To use the
adjusted to
button then
is
the
circuit,
make
"cal"
the current meter
=
M
t
1
TJ
qnd
pushed,
is
read
and the value of
released
the meter, with 71
button
full is
Rj
is
Kale, The "cal"
read directly from
corresponding to full-scale deflection of
100 pk. D,:
100 pa
VF
F.S.
Ir
FIGURE
5
— TEST
CIRCUIT FOR INTRINSIC
STANDOFF RATIO
1N457, or equivalent, with
= IMS V < » t* «»
ot If.
l
= 50 = »1 F
Hu
following choroclirhtlis:
/jA,
fa)
PRINTED IN U.S.A.
*V22
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
Tl
cannot assume ony responsibility
or
represent
that
they ere
free
lor
Irom
;
ony circuits shown
potent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIM PRODUCT P0SSIBL1 IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST
TYPES 2N696. 2N697,
2N717, 2N718, 2N718A. 2N730, 2N731, 2N956, 2N1420, 2N1507, 2N1613, 2 N 1711
N-P-N SILICON TRANSISTORS
BULLETIN NO. OL-S 693471. MAY 1963-REVISED AUGUST 1969
Highly Ratable, Versatile Devices Designed for Amplifier, Switching
ma
from 150 ma,
•
High Voltage
•
Useful h FE
•
dc to
30 mc
Low leakage
Over Wide Current Range
mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and
2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages.
D maximum
absolute
rating* at 25*C free-air temperature (unless otherwise noted)
2N717 2N71SA 2N730 2N71S 2N731
2Ne9e 2N697 CoHoctor-laso Voltaao
M
60
CoHortor-Emltrtr Voltaao (Set Noti 1)
40
40
CoHsttor-EmMir Votings (Sm Nets 2)
60
75
60
75
75
50
40
50
30
50
50
5
7
5
7
5
7
5
CoHocfor Currant
1.0
Total Dsvics Dissipation at (or boknr)
0.4
0.4
t
tt
Free-Air Twnptrorura
(Sos Nots
IndfcaM
in
rarenthtJts)—•-
DoviM Dissipation at 25*C Cast Ttmporaluro
Total
(Soo Nolo Indkotsd in
(or
Mow)
ramitheses)—*»
Dovkt Dbsipation at S 100 C Cass Tompsfahiro
Total
Operating Collector Junction
Tomptrahm
0.5
1. Tkli
0)
(S)
(7)
1.5
1.1
t
tt
w
«)
(«)
1.0
0.7S
1.0
t
tt
175t
175tt
tu*ta>ltt«
nUm
«*> ptra Hn it
Mint •pslln trim Hw btitHaiitHr
1. Strati
llwarly tt
175*C traMlr
A. Strait
llmitf
17$*C
f
cm
ttmptrann
it
frtc-di
mstntwt
tt
Ii
(t
K
)
Ii
tend
Itii
tt»
nit
if
4.0
m/C*.
if
IJ.3
mr/C*.
Imtt
i.
Strit. linMrir
»
1"*C
2NI413 MIN MAX
i
i
'cat
2N71SA
TO-5-o-
75
••
'•
2N*M
TOIt-a.
I.=t
= 3» an. = n. c = 1M M t K = E = IN 11, c = t =t »CI = » t = Vc, = N =t E »CI = « V c , = »' f = t K = im «n va = a »«• = *'. 'c = » Ma c = »c = »Ct = » c = IM an. »« = " c = aw, »„ = M c = l
»•
'cio
tampcratur* (unlaw otlwrwis* noted)
Tiff CONDITION S
ImUm Valla*
*|M|CIO MUcMr-laH
ulr
P-a
IN
0.01
*"
I.NS
M
It
a.
l
20
35
».
l
It
Sai
Nan
12
35
75
».
l
It
TA
= -S5'C
20
35
lla
Saa Data 12
*
laK-Emllltr V«ltaa«
VCHutl
MlKW-Eaittar Small-Sla»al
"lb
Saturation
Valla*
Camnia Ian
Input ImaaJaaca
Small-Signal
rb
*•
l
¥«
It ..
I
1,
15
1,
IS
»•
'• '•
baw-ku
Rtvarsa Vartaft TrancJnr
= »• = = M, = am. »CI = « »CI = »CI = *
»Ct
lath
••
>
(3)
Total Device Dissipation at (or below)
3.0
2.0
1.5
t
t
t
(4)
(6)
(8)
25*( Cast Temperature (See Nott Indicated in Parentheses)
>
w
m
I.
TMl Mleai apalUl wImi
2.
Tbli
3.
tareta linearly to
Irion
epallei ariwn
4. Dtrete Haaerl* to 5.
IIm BMe-eaiittor
mlltoMt «aet
easa-aaritter
no'C Mt*C
traa-alr tomeeratera »l
Iraa-air
im tomperelera M
tenia
llaterl r to
I75*C
linearly to
I7S*C casa laaueretera et
a.
Omto
terete Ibeerlr to 17J*C free-elr teragereian) at
tenia Haeerh/'to 17S*C
».
Oirato llaearlr to
10. Dirato llaanlr to
)
il
aeral
M
•> Itn then 10
to
Mm iim
tf 4.57
ef 17.1
cm toaaiefetwa at toawantan
IO0*C caw lemeanrere
ma lee
at
rate ef 13.3
Hw
rtlt et
ten
Hw
I
f Taxas
n«/°C. mw/°C. mw/°C.
IV
(10)
3.0
(3)
3.0
t
t
(4)
(4)
w
Inatrumanti guarantees thasa devicae in
$Texas Inatrumenta guarontaea ha typaa 2N719 and 2N720 to ba capable of tha aame diaaipation ai regiatered and ihown for typaa 2N719A, 2N720A, 2N870. and 2NS71 with appropriate derating factors ahown in Notea 9 and 10.
l.M m»/'C.
al Ida rata at 10.3
1.8
(3)
TO-39 packages date-coekKl 7326 or higher to ba eapaMa of incnMeed dissipation aa follows: O.S «V at Ta < 2S"C daratad Nneoriy to T^ - 200"C at tha rata of 4.67 mWVC, or 10 W at Tc < 2S'C 15.71 W at T c - 100 CI daratad linearly to T c - 2O0° C at tha rata of S7.1 mW'C.
wm/'t.
at 10.0 aiw/»c.
rail at
(°)
200*C
epaa-circaM.
Hw ran
I.
fraa-ali
M
(l
(10)
mnoeralara at lea rata ef 4.0 mw/'C.
7.
IM'C
il
1.8
(10)
—6S°C Hw
(»)
1.8
Storage Temperature Range
DOTES:
0.8
t (?)
(5)
UNIT
anr/*C.
MEOEC regieterad data. *The JEOEC regletored outlirw for lhaaa devioae ia TO-5. TO-39 (alia within TO-5 with Mia exception of toad length.
USES CHIP N23 173
TexasINCORPORATED Instruments KMT OmCK
BOX M12
•
DALLAS, TIXAS 78383
4-31
TYPES 2N698. 2N699, 2N719. 2N719A. 2N720. 2N720A N-P-N SILICON TRANSISTORS
25 a C fr««-air tomporatur
•lactrical characteristics at
TUT CONDITIONS
•AftAMiTER
rwis* noted)
c
=
c
=
Colloctor-laia l
Vollago
Colloclor-Emiltor
V |K|CtO
l
lrookda«n Voltopo
c|0
I
'f.10
Inakdmn
l
Veltaga
Collector Cutoff
E
l|
Carnal
Emltltr Cutoff Current
N
1
Forward Currant
CI
V CI
Trenifor Hollo
= =
1,
=
lg
=
l
l
MAX MIN
data 11
M
Soo Nata 11
N
Sh
0,
= ion, = c c = = = = = = = c = c = C = '»»Ma ma, c = ma, c =
1,
»,
1,
,,
l
»,
1,
0,
MAX MIN MAX
120
N
00
120
V
M
«
M
i
7
7
¥
5
T
A
=
T
A
=
IS0*C
0,
T
A
=
1S0»C
1"
200
1S0°C
0,
1*
2
2
1, 1,
MAX MIN
120
•„
«,
V„=S,, »« = '». V
Static
k
100
c
l
Inakdomi Valtag* Emitlar-lato
*|R)HO
30 ma,
= ma, = 100 pa, = mo, V C1 = M», V cl = «0«, V Ci = 75 v cl = 75 ¥ Ci = 90 »CI = 90 y„ = j,,
Callactar-Emitfar
v |M|cn
100 pa,
UNIT
2N«t»
2N69S
MIN »|*|CIO Inikdown
2N71»A
2N71»
TO-ll* TO.***
0.005
0.010
P*
15
IS
M« f*
E
f* r*
100
i
0.010
0.010
l
f
l
10 v,
l
10
10 »,
l
10
Man
See T
A
11
= - SS*C,
Soo Data 11
= 10 = ma, = ma, = mo, = ma, V C| = V C|
V
K
laio-Emlttor Volfogi
Collector-Emlttor
"cilutl
salaratlan Veltaga
Small-Signal h|
1,
15
l
1,
5
l
1,
15
Saa Neto 11
0.9
ISO mo,
Sh
Nolo 11
1.1
50 ma,
Soo Nolo 11
1.1
Nolo 11
40
kc
1
kc
5
ma,
f
=
1
=
1
ma,
f
=
1
kc
0.5
e
=
5 ma,
f
=
1
kc
1.0
l
c
=
1
ma,
f
=
1
kc
15
15
1,
l
c
=
5 ma,
f
=
1
kc
2S
v,
l
c
=
SO ma,
f
=
20 mc
2.0
Trantfor Rotio
¥c ,
=
10
l
Small-Signal
V
c,
=
5 v,
V
c|
=
V Ci
c
=
1
c
=
l
c
10 »,
l
=
5 »,
V c|
=
10
V cc
=
10
V C|
=
10 »,
»,
1
M
kc
H
20
1.1
5
5
1
l
f
20
1.1
=
»,
ma,
1
120
M 0.9
f
l
Voltago
Sm
ISO ma,
20
f
5 »,
Imno
SO ma,
ma,
=
Common-lasa
U
ISO ma, Soo Noli 11
c
5 ma,
=
Vc,
10
= = c = c = c = c = c = c
= =
l
V C1
Small-Signal
h^
l
5 »,
Input Impedance
*
l
l
t
Cemmon-late
b
«,
5
l
20
IS
10 10
10
V
1.2
V
5
5
20
20
IS 10
IS
ahm
10
ahm
2.5 >
2.Sl
4
10-«
2.S>
2.5 I
io-«
10-4
Si
3l
Si
Si
10-0
,0-«
10-4
1u-«
kc
0.1
0.5
io-
0.1
0.5
V
1.1
0.1
0.5
pmhe
1.0
Atmho
Cammon-lofa Output Admlttonta
Small-Signal
Common-Emitter fa
Farward Curront Trantfor Ratie
1.0
1.0
IS
IS
4S
21
2S
2.5
2.0
2.0
100
Small-Signal i
Camman-Emlttar
1
1
"«•'
Forward Currant Tranifar flatla
Commen-Rflio Opan-Clrfult
^o*>
1,
=
0,
Enapt M71»i
f f
= =
1
mc IS
20
20
IS
•»
IS
IS
•f
140 kc
Output Capacitance
Common-teie C ib
V„
Opan-Clrcull
=
0.5 «,
l
c
=
0,
Eicopt 2H719:
f
f
Input Capacitance
NOTE
11
Ttwtt paromittn muit bu Fulit
width
nqulnd •Indlcati*
4-32
JEDEC
mutt
miawnd
bi such that
accuracy of thi
uilng
halving
piilit
tr
Itchnlqwi.
doubling
NY
dot* not
S 300
= =
1
mc 05
140 kc
pitc, Duly cycU
cau» a ehangt
grtattr
<
2%.
than
thi
mtaHiwnmt.
rtglilurtd data.
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
TYPES 2N719, 2N719A. 2N720. 2N720A, 2N870, 2N871, 2N1889. 2N1890, 2N1893 N-P-N SILICON TRANSISTORS 2S*C
otecrrical characteristics at
PAKAMITM
temperature (unlaw otherwise noted) TO-10>» 2N7M 2N720A 2N070
free-air
H$T CONDITION!
JN1DW
TO-3**-
MIN Colltctir-ltM I
c
=
I
c
= Nm,
MlKtor-Emltttr
'l"Kao
UuMmm Mil* CillKt«-Eaitt«
»l«|Ct*
IriaMm Mttfl EaltKf-OaH
*IMMO InaMm
KtlHi.
100/M.
I,
=
1,
=
lulUill
0,
= IN M, IH = 0, Sh Hot. = 100#M, c = t = 1-., C = I = »CI = *I,, = Va = Ml, T A = l»*t » =l C| = 75», »c , = 75 = IA = ISO'C E V c ,= »l«. =• = VC1 = I0«, TA = 1S0»C »„ = !,. e = | '•». c = m/M ¥^=11,, e = ltM, S« fell y^slO., c = 10m, TA = -5S*C l
10
c
l,
I
l,
I
MAX MIN
lit
00
11
MAX
MIN
IM
100
100
00
M
M
100
to
00
;
7
7
f
t 200
0,
1"
lj
C»ll«ttt Cuter! Cvrnat
I^IO
¥,
1,
l
0.010
0.010
IS
IS
M" iu
m f m
0.010
!,
l,
MAX
2N1WO UNIT MIN MAX
s
l,
l|
2NS7I
1N1M9
15
0,
l
'M
Emllhf CateH CmubI
0410
i
II
l
Sink F«winJ Timftf Mil
'k
Currtnl
i
Sh
VH
lait-ExIrNr
Mlt*
CollKlv-Eaitta
»CII»t1
SalarallM Vitafi Saull-SlBiil
Input
InpttoK*
Sntll-SlfMl
CMMIMiVMM
,
Imin
rt
Small-Signal
= IO», = Sum,
Ovtpwt MnlttaiKt
Smll-SlfMl
Cmni«vEnhter *>
Ftnnri CwimI
TimiIh litM
= 150m, SmIMiII = M«w, s« fete c = IHh Snltete c = M im, Sn Noli c = IMuhv S« fell = c = nw, = = M. c = c = M
V cf
l
c
1,
i
c
l,=
15a»,
l
= M, = tlM, V CI = 5 «C| = 1,
5
l
l,
l
».
11
»,
IS
IS
M
It
|
1 lie
1
1
kt
,
1
|
kc
m.
»
1
kc
= In, = '"».
1
=
l
V C|
»CI
= S«, = '•»>
1
c c
l
=
5
1
=
**
= Ike
c
=
lm,
I
10 ¥,
l
c
=
Smt,
f
= Ike
10
l
c
= SO m, = 10 mi
IS
45
I.S
MO t.l
¥
1.1
1.1
1.1
¥
1.1
1.1
1.1
¥
5
s
5
1
10
to
10
4
1
4
1.15 «
ii*
0.1
100
0.0
10 1.5
110
0.0
N
ll
l
a = S», V Cf =
5
10
40
110
l.S
I
to
10
N
*»
4
1
•SRI
1.15 >
1.5 «
10-4
10-*
1.5
10-4
lf«
= lk« = lkc
'c
i
41
1.1
11
1
»cl
110
11
5
l
10 ¥,
11
I
= Ji,
40
11
l
»c ,
CMiiiiM*lon
k~k
M
fell 11
¥•!!«•
Tranter l«1i«
0410
0.010
N
<
l.S
i
10-*
I0*
0.5
o.s
0.5
0.1
jumbo
1.0
0.5
0.5
0.1
/**«•
100
M
100
so
100
45
45
ISO
70
HO
1.S
l.S
JO
100
Smoll-Slfnal .
CMimm-EiiiHtw
I
'"
Emitter Cutoff Current
Vwicio^HWof-Boie Breakdown
= 20v, Vci = 20v, Vci = 10», Vsi = 5v, lc = 10 ma, lc = 10 tut, = 10 /ia, Vci
Voltage
li
=
Static
Forward Current Transfer Ratio
VC |
hn
Static
Forward Current Transfer Ratio
Vet = 0.35v,
Static
hn
Static
Forward Current Transfer Ratio
Forward Current Transfer Ratio
Vcs
V*
Base-Emitter Voltoge
li
Base-Emitter Voltage
li
V«
Base-Emitter Voltoge Base-Emitter Voltoge Collector-Emitter Saturation Voltage
Vciimi
t v o»uti ,.
*•'
1
Collector-Emitter Saturation Voltage
Cab
10
v,
= 0.35 = ma,
li
10 ma. 1
ma,
10 mo. 1
ma,
10 ma,
Forward Current Transfer Ratio
Vei
=
Common-Base Output Capacitance
Vcs
= iv,
10v,
= = =
V» V« V„ l
MIN
MAX 1
= =
TA
0,
+0.35
TA
»,
170»C
100
100»C
30
=
e
10
= = lc = 1,
lc
=
lc
=
1
ma
10
=
ma
100
ma
= 10 ma, lc = 10 ma lc = 100 ma lc = 10 ma, lc = 100 ma. lc = 10 ma, lc = 100 ma, lc = 10 ma. = lc
0,
ls
T*
= -55°C
>«.
l*
lc
at 100 mo
lc
ea
Storage Time
t,
U.0TB.
poramiton 1.
Thli
mut
valw
%dlcet« JEDEC
440
In Orctilt
c a« 100 ma
lc
as
leji)
V
10
2N852
20
2KB51
20
(0
2H852
40
120
2NI51
10
2N852
20
2N851
10
2KB52
20
1.5
f
= =
1.8
0.35 1.0
100 mc
9
opplloi
whoa
Hw
ben-omlttor dlodo
li
optn-tlrcolM.
In Orcull
1
db
lmc
A
l» miaiurid with o pulu SurallM of 100 mliroMMidi end • doty eycli of
0.85
1.1
A
a> jl^l as 10 ma
J
Pt
MAX
UNIT
16
nsoc
12
met nsoc
2N851
24
2NB52
24
nssc
2N851
40
met
2N8S2
45
nsoc
2N851
14
nsoc
2M852
18
usee
B
pmml.
». Strata llaoarly to
175'C frn-olr tmporotoro at raa rato of I mw/'C.
I. Sorati llnmrly to
17S*C
«h
ttmpiroturo ot tho rato of I
ngiifarad data.
TexasINCORPORATED Instruments post office sox sou
.
iu iu IM
5
2N851
= -55'C T* = -55°C Ta = I70»C Ta = 170°C
A
In Circuit
fin
v
T*
Turn-Off Time l
TThm
mo
hi Circuit
UNIT
V
IcsxlOmalnQrcult A
10
+ 200*C
20
'switching characteristics at 23'C free-air temperature PARAMIT1R TUT CONDITIONS Turn-On Time
to
12
0.65
f
Dallas. Texas
nu
w w
175'C
l,
lc
v,
1
= Is = li = li = =
Small-Signal Common-Emitter
,
=
0.25v,
Vci
fVii
tV M
1.2
CONDITIONS
TEST
n
fh H
0.3
temperature (unlets otherwise noted)
froo-alr
V|at)iso Emitter-Base Breakdown Voltage
h
200 ma
—65°C
t Vimicio Cellecter-EiTiltter Breakdown Voltogt
12v
.
m/*C.
TYPES 2N8S1, 2N852 N-P-N SILICON TRANSISTORS PARAMETER MEASUREMENT INFORMATION CIRCUIT
A
.C2
G
9 |
vV*
I!
auSBlJ
8.8W3 0.009
Y
10%
_v Hf—VW-S)
II
•4
0.003
Hf-
EH T^-
—*0.1
Vce
-t-
Yy,t
•Mull—
AND OUTPUT
INPUT
lc
lnu
mo*
mo*
mo*
w y
¥
= n
10
3
-1.5
-1.5
3.0
100
40
-20.0
-2.4
6.0
'Prior
WAVIPOMU
PUISI
CIRCUIT CONDITIONS Vcc
«.
«.
R>
*4
Ri
n
n
n
3.3 X
50
220
330l»l
56
t pn
IX
•f
",»
V|B.»
v«.
-3.0
1S.0
12.0
-15.0
-4.5
20.0
15.3
MIN Collector-last
Vilpjck Ireakdown
l
Voltage
c
=
c
=
Col lector- Em jltir
V |«|CEC
I
Ireakdown Volfagt Collector- Emitter
V (R)CER
Ireakdown Voltago Emitter-late
V(K|EIO
Ireakdown Vol toft
100 «.
¥
200
l
= »«. »EI = 5'. v ce = =
MAX
2NS71
2N1890 UNIT MIN MAX
2
=
TA
0,
=• = E = = E c=» 'c = « c = 100 ma, c = c = 10 ma.
*B
V CE
Transfer Ratio
=
MIN
If
10 »,
Static
E
2N870
2N1M9 MIN MAX
,
l
VC
2N720A 2N1S93.
5
1
E
otherwise noted)
=
TA
11
-55%
0.010
20
20
35
35
20
20
0.010
("
See Note 11
= 10,, = ma, = ma. = ma. = ma. » CI = S,,
V ce
v*
late-Emitter Voltage
Collector-Emltttr
V CE(Mtl
Saturation Volage
Small-Signal
l
If
5
l
1,
IS
l
l
5
l
IS
l
B
1,
l
Common-lose
"ib
Input Impedance
»«='•«
Small-Signal
Common-lose *rb
Small -Signal
Output Admittance
vc .
=
io,.
l
c
5,.
l
c
10,,
l
Small-Signal
5,.
n«.
a= »ct =
V
Common- Emitter »f.
Vc ,
Forward Current Transfer Rati*
11
1
1
1
kc
S
1
1
kc
1
1
=
5
ma,
1
1
1
=
40
11
120
40
120
1.3
11
ISO
l
Common-lose
"ob
11
See
See
5«.
= =
See
ISO
=
VC ,
150
c
»CI
Reverse Voltage Transfer Ratio
l
= ma, Mali = 50ma, Note ma, See Hoi. c = Note c = SOma, mo, in Noli c = = c = ma, = = ma, c = c = ma, c
11
I
20
30
20
10
4
ma,
1
c
5 ma,
l
c
=
1
l
c
l
c
l
E
o.?-
V
1.3
f
1.2
1.2
1.2
«
5
5
5
20
1
kc
1
= =
1
kc
ma,
1
=
1
kc
35
=
5 ma,
f
=
1
kc
45
=
50 ma,
f
=
20 mc
1.5
= =
140 kc
= =
140 kc
0.1
30
20
1
4
1.251
10-4
ah.
1
ofcm
10-« 1.5 i
1.5
10-*
10-4
¥
30
1.5 I
10-<
1.5
io-<
= =
IN
1.3
4
3l kc
100
1.3
1.251
2.5
120 0.1
30
kc
1
40
0.1
10-4
0.5
0.5
0.5
0.3
,UJIllM
1.0
0.5
0.5
0.3
larium
100
30
30
100
50
200
45
45
150
70
300
2.5
2.5
100
Small -Signal
Common-Emitter
K\
Forward Current
V CE
=10..
V c|
=
3.0
Transfer Ratio
Common-lose Open-Circuit
Cob
10
,,
=
0,
Eiapt 2N720:
1 f
Output Capacitance
Common-lose
V E1
Open-Circuit
ALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE* THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE 2N1973, 2N1974, 2N197S
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE* absolute
maximum
ratings at
25°C
free-air
temperature (unless otherwise noted)
2N1973 2N1974 2N1975 100v-80v*-60v*-
2N910 2N911 2N912 •
Collector-Base Voltage Collector-Emitter Voltage (See Note
1
Collector-Emitter Voltage (See Note 2)
-7v*-
Emitter-Base Voltage
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Notes 3 and 4) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Notes 5 and 6) Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10Seconds .
NOTES:
.
.
3.
For
4. For 5. 6.
For For and
1.8
w*
0.8
w*
W Emitter-Base Breakdown Voltage
i.
mw
25°C free-air temperature (unless otherwise noted)
V(ki)ceo Collector-Emitter Breakdown Voltage
Icbo
3v
200
.
PARAMETER Vimcto
'* v •
rale of 1.72
measured using pulse techniques.
mw/C°.
mw/C°. PW
= 300
floating for oil measurements except Power Gain.
ftm,
For this
Duly Cycle
<
1%.
parameter the fourth lead
is
grounded.
Indicates JEDEC registered data.
USES CHIP N22
448
Instruments TexasINCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
TYPE 2N917 N-P-N SILICON TRANSISTOR
'operating characteristics at 25°C free-air temperature
PARAMETER NF
Spot
Note
TEST CONDITIONS t
V« = ov,
Figure
f
Unrteutraliitd Small-Signal
6
**
Emitter Insertion Powtr Gain
P.
= 60Mc
V« = 10v,
Common-
Soo Figure
Vcc
Osdllator Powtr Output
l
c
l
c
1
= lSv,
lc
f
Mc,
Sm Figure 2 t
M
The faerie
(cose)
h
flwtlnf
Ik
ill
lets
except Poorer
M>.
IMt
For
aerejeotor lln feurti toea
UNIT do
= 5mo, = 2O0«c, = » mo, = 500 1
MAX
MIN
= lmo. »» = 400n,
9
db
10
mw
b |immM.
PARAMETER MEASUREMENT INFORMATION
CIRCUIT
Mfc-1 FROM
50
COMPONENT INFORMATION
CI, C2, ondC9: 0.05 H f C3:
1
.5 - 10 pf
C4ondC5: C6 and C7:
O
SOURCE
C8: Rl: LI:
25 pf 2.2 kO
'12AWG, 2 cm ID 200 Mc RFC 1/2T'12AWG, 3 cm IT
L2and L4:
COMMON
I
L3:
Dl and D2:
D-C
1000 pf 3 - 15 pf
1N3063
(or
ID equivalent)
6 + vcc
FIGURE
1
- UNNEUTRAUZED 200-Mc INSERTION POWER GAIN TEST CIRCUIT
±±
ClandC2:
OUTPUT
DOUBLE
=
STUB
TUNER
1000 pf
C3: 75 pf Rl: 2.2 kO
and L3: 500 Mc RFC 2T '16 AWG, 3/8" OD, 1 1/4" length Double Stub Tuner consists of the following LI
=
L2:
plumbing 2 I
1 1
(or equivalent):
GR GR GR GR
Type Type Type Type
874 TEE 874-D20 Adjustable Stub 874-LA Adjustable Line
874-WN3
Short-Circuit
Termination
FIGURE 2 • Irticolos
3
PRINTED IN
- JOO-Mc OSCILLATOR
POWER OUTPUT
TEST CIRCUIT
JEIEC rafistsne *•!•
USA
Tl
cannot assume any responsibility
•r
represent
Hiot
they ore Tree
lor
eny
circuits
shewn
from patent infringement.
TEXAS INSTRUMENTS DESERVES THE RIGHT TO MARE (MANGES AT ANY TIME IN 011X1 TO IMPROVE DESIGN AND TO SUPPLY THE IEST PRODUCT POSSIBLE.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 78222
447
1
TYPE 2N918 TRANSISTOR N-P-N SILICON BULLETIN NO. DL-S 7311989, MAHCH 1973
FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS • 6 dB mex et 60 MHz Low Nolle Figure 15 dB mln et 200 MHz • High Neutralized Power Gein • 30 mW mln et BOO MHz High Oiclllator Power Output .
.
.
.
.
.
.
.
.
•mechanical data
THI ACTIVI ILIMENTS ARI ILICTRICALLY INSULATED PROM THE CASE
»MR«
m-
MttJ
mm' i
m
-r-
ft-Mft
fl.lEE
MA
MA
em -»-
1
LojwJ ~ n MM
ALL JEDEC T0-72 DIMENSIONS AND N0TE8 ARE APPLICABLE •absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
30V 15V
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
3V
Emitter-Base Voltage Continuous Collector Current
50 mA 200 mW 300 mW o _6S c t0 200^0 300 C
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) Storage Temperature Range Lead Temperature 1/1 6 Inch from Case for 60 Seconds •electrical characteristics at
25° C
free-air
temperature (unless otherwise noted)
V(br)CBO v (BR)CEO v (BR)EBO
Breakdown Voltage
c-1ma.
Collector-Emitter Breakdown Voltage
IC
Emitter-Base Breakdown Voltage
l
'CBO
Collector Cutoff Current
hc E
Static
'e-o
3 mA,
Ifj
E -10uA,
V C B-15V,
- 0,
See Note 4
lc-0 l
E
Base-Emitter Voltage
VcE(sat)
Collector-Emitter Saturation Voltage
In,-
l
V V
150°C
Forward Current Transfer Ratio
VcE"
mA, 10V,
Vcb-IOV, VCB " 0,
Common-Base Open-Circuit Output Capacitance
Common-Base Open-Circuit C|ho Input Capacitance
Time Constant
lc" 10
1
nA uA
1
V
0.4
V
20
l
Common-Emitter
Collector-Base
V
10
.
1
MAX UNIT
15
-0
VgE
rfe'Cc
TYP
30 3
TA V C B - 15 V, E - 0, V CE " 1 v 'C * 3 mA B -1mA, lc-10mA
Forward Current Transfer Ratio
Small-Signal
MIN
TEST CONDITIONS*
PARAMETER Collector-Base
.
mA
l
c -4mA,
f-100MHz
l
E -0,
E "
0.
f- 140 kHz f - 140 kHz
1.7
l
2
V EB -
0.5 V,
I
C
- 0,
f- 140 kHz
Vcb"
10 V,
l
E
--4mA,
f
- 79.8
MHz
6
9 pF 3
8
pF OS
This value applies when the base-emitter diode Is open-circuited. Derate linearly to 200° C free-air temperature et the rate of 1.14 mW/°C. 3. Derate llneerly to 200°C case temperature et the rate of 1 .71 mW/°C. 4. This parameter must be measured using pulse techniques. V, - 300 us, duty cycle < 2%. •JEDEC registered date. This deta sheet contains all applicable registered dete In effect at the time of publication, tfhe fourth lead (case) Is floating for all meesurementa except power geln. For this measurement, the fourth lead Is grounded.
NOTES:
1
.
2.
USES CHIP N22
Instruments TexasINCORPORATED POST OFFICE BOX 8012
•
DALLAS. TKXAS 75228
TYPE 2N918 N-P-N SILICON TRANSISTOR •operating characterirtlct at 26° C free-air temperature
PARAMETER VcE
Spot NolM Figure
F
Neutralized Snwll-8lontl
'"
Otclllitor
n
Collector Efficiency
See Figure
MAX UNIT
lc-6mA,
f- 200
dB
6
MHz IB
dB
30
mW
1
V CB -1SV,
Power Output
MIN
l
f-60MHi VCB-12V,
Common-
Emitter Initrtlon Power Gain
Po
TIST CONDITIONS* Rq - 400 n, c - 1 mA,
* 6 V,
l
c -8mA,
f> BOO MHz
See Figure 2
2BK
'PARAMETER MEASUREMENT INFORMATION CIRCUIT SCHIMATIC
NEUTRALIZATION ADJUSTMINT PROCEDURE
C2
After tuning omplifitr as for normal gain measurement, reverie Input
on
ond output connections and tun*
detector. Thii sequence
obtained for
li
repeated
U
minimum Indication optimum settings art
for
until
all variables.
COMPONENT INFORMATION 3-12pF C6: 0.06 UF C2»nd C7: 1000 pF R1: loon C3i 1.B-7.6pF R2: 1 kO CIRCUIT
CI:
ni v„
c*
n
a
TO50C5 DETECTOR
C4 and C6: 0.01 nF LI: 3H T #16 AWG, 5/16"
ID, 7/16" longth Turni Ratio •» 2 to 1 L2: 0.4-0.6S MH, Millar #4303 (or oqulvalantl. L3: 8 T #16 AWG 1/8" ID, 7/8" length. Turns Ratio * 8 to 1
6^Hh
L4:
B
200 MHz RFC
FIGURE 1-NEUTRALIZED 200-MHt INSERTION POWER GAIN
CIRCUIT SCHEMATIC
L4
C2 CIRCUIT
COMPONENT INFORMATION
CI andC3; 1000 pF
-ita f 1* 5
L2
i
C2: 50 pF C4: 75 pF R1: 2.2 kfi LI, L3, and L4: 0.2 fiH, Ohmite Z460 (or equivalent). L2: 2 T #16 AWG, 3/8" OD, 1-1/4" length Double-Stub Tunar consists of the following
OUTPUT
DOUBLE STUB
TUNER
plumbing 2 1 1 1
(or aquivalant):
G R Type 874 Tee
GR GR GR
Type 874-D20 Adjustable Stub Type 874-LA Adjustable Line Type 874-WN3 Short-Clrcuit
Termination
FIGURE 2-500-MHz OSCILLATOR POWER OUTPUT
*JEDEC f The
F3
registered data fourth leed (cese) is floating for
all
measurements except power
For
this
measurement, the fourth leed
is
grounded.
PRINTED IN U.S.A. Tl
connot asiume any relponsibility for any circuits ihown
or
represent
that
they
arc fret
from
patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
gain.
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
Texas INCORPORATED Instruments POST OFFICE BOX 8012
DALLAS, TIXAS 78222
440
TYPE D2T918 DUAL N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 7311977, MARCH 1973
TWO TRANSISTORS IN ONE PACKAGE FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS • 6 dB max at 60 MHz Low Noise Figure 15 dB min at 200 MHz • High Neutralized Power Gain 30 mW min at 500 MHz • High Oscillator Power Output .
.
.
.
.
.
.
.
.
mechanical data
ALL LEADS INSULATED FROM CASE Dimensions without tolerance designate true position. Luds having maxiin mum dlamater (0.019") maasurad gaging plana 0.054" +0.001" -0.000" below tha stating plana of the davlca hall ba within 0.007" of thalr trua position rsiativa to a maximum width tab.
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
B
absolute
maximum
ratings at
25°C
free-air
1
1
2
COLLECTOR
2
temperature (unless otherwise noted)
Collector-Base Voltage
.
30
V
Collector-Emitter Voltage (See Note 1)
.
15
V
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2): Each Triode
.
Total Device
Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds
V(BR)CEO v (BR)EBO
Collector-Emitter Breakdown Voltage
Breakdown Voltage
c -1uA.
IC " 3
lg - 0,
l
lc-0
Base-Emitter Voltage
v CE(sat,|
Collector-Emitter Saturation Voltage
lB"1mA,
lc-10mA
VC E
l
h FE
Static
Forward Current Transfer Ratio
Common-Emitter
Forward Current Transfer Ratio
Output Capacitance
Common-Base Open-Circuit
rb'Ce
Input Capacitance Collector-Base
- 10 V,
—65 C to 200°C
Time Constant
E
l
E -
0,
TA
- 150°C
C - 3 mA lc- 10 mA
1
uA
1
f- 100 MHz f
- 0.
f
-
1
V EB - 0.5 V,
lc - 0,
f
-
1
MHz
Vcb-IOV,
l
f
- 79.8
--4mA
nA
0/4
E -0,
E
10
20
MHz MHz
'E
V
3
I
C - 4 mA,
MAX UNIT V V
-0
l
l
TYP
15
See Note 3
-
Vcb-IOV, VcB " 0,
Common-Base Open-Circuit
Cibo
.
30
Ie-0
V BE
Emitter-Base Breakdown Voltage Collector Cutoff Current
Cobo
NOTES:
l
mA, E -10uA, V CB -15V, V C B - 15 V, V C E - 1 V, lej- 1 mA,
•CBO
MIN
TEST CONDITIONS
Collector-Base
Smell-Signal
.
300°C
PARAMETER v (BR)CBO
h fel
.
25° C free-air temperature (unless otherwise noted)
electrical characteristics at
l
3V 50 mA 200 mW .... 300 mW
1
6
9 1.7
2
pF 3
MHz
This value applies whan tha base-amitter diode Is opan-circuitad. Derate linearly to 176°C fraa-alr temperature at tha rates of 1.33 mW/°C for each triode and 2 3. This parameter must ba measured using pulse techniques, ty, - 300 Ms, duty cycle < 2%.
V V
8
pF P«
1.
2.
mW/°C for
the total device.
USES CHIP N22
4-50
Instruments TexasINCORPORATED POST OPPICI BOX 5012
DALLAS. TEXAS 7S222
i
TYPE D2T918 DUAL N-P-N SILICON TRANSISTOR operating characteristics at 25° C free-air temperature
PARAMETER F
V CE
Spot Noise Figure
f
Neutralized Small-Signal
™
Common-
Oscillator
i)
Collector Efficiency
- 60
Vcb
Emitter Insertion Power Gain
Pq
- 6 V,
Vcb
l
MIN
MAX UNIT
fi,
6
MHz
= 12V,
See Figure
Power Output
TEST CONDITIONS R G - 400 c - 1 mA, c=
6mA,
f
lc =
8mA,
f= 500 MHz
l
=
dB
200MHz 15
dB
30
mW
1
= 1SV,
See Figure 2
25%
PARAMETER MEASUREMENT INFORMATION CIRCUIT SCHEMATIC
NEUTRALIZATION ADJUSTMENT PROCEDURE
C2
After tuning amplifier as for normal gain measurement, reverse input
\3*&f
s>
obtained for
FROM 50 O
t°Ih ftti
SOURCE
wa v„
c* i
^
— r—pIC—
|£
1
TO
50
is
repeated
minimum indication optimum settings are
for
until
variables.
all
COMPONENT INFORMATION 3-12 pF C6: 0.05 UF C2andC7: 1000 pF R1: 100 12 CIRCUIT
C7
>
and output connections and tune L2
on detector. This sequence
CI:
a
C3:
DETECTOR
1.5-7.5 pF
C4 and LI:
R2:
1
kSJ
C5: 0.01 juF
3V4T#16 AWG, 5/16"
ID,
7/16" length
Turns Ratio «*2to 1 L2: 0.4-0.65 HH, Miller #4303 (or equivalent). L3: 8 T #16 AWG 1/8" ID, 7/8" length. Turns Ratio *8to 1
r^H L
L4:
200 MHz
B
RFC
FIGURE 1-NEUTRALIZEO 200-MHz INSERTION POWER GAIN
CIRCUIT SCHEMATIC
CIRCUIT
OUTPUT
COMPONENT INFORMATION
CI and C3: 1000 pF C2: 50 pF C4: 75 pF R1: 2.2 k« LI, L3, and L4: 0.2 jjH, Ohmite Z460 (or equivalent). L2: 2 T #16 AWG, 3/8" OD, 1-1/4" length Double-Stub Tuner consists of the following plumbing (or equivalent): 2 G R Type 874 Tee 1 GR Type 874— D20 Adjustable Stub 1 1
GR Type 874- LA Adjustable Line GR Type 874-WN3 Short-Circuit Termination
FIGURE 2-500-MHz OSCILLATOR POWER OUTPUT
13
PRINTED IN U.S.A. Tl
connot assume any responsibility for any circuits shown
or
represent
that
they are
free
from
patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
DALLAS, TEXAS 75222
4-51
TYPES 2N929, 2N930 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 653553, MAY 1963-REVIS6D SEPTEMBER 1966
FOR LOW-LEVEL, LOW-NOISE, HIGH-GAM, AMPLIFIER APPLICATIONS
• Guaranteed h„
at
10 pa, T A
=-55°C
and 25*C
• Guaranteed Low-Noise Characteristic at 10 pa • Usable at Collector Currants as Low as 1 pa
'mechanical data
the concern
is in
eiectiiul
COHTMT WITH THE CASE All JEtEC T0-1I IIMEWIOHS
AM
•absolute
maximum
HOTES AtE Aff UCAHE
ratings at 25*C free-air temperature (unless otherwise) noted)
** v
Collector-Base Voltage
Note
Collector-Emitter Voltage (See
^
1)
30 300 600
Collector Current
25°C Free-Air Temperature (See Note 2) below) 25*C Case Temperature (See Note 3)
Total Device Dissipation at (or below)
Total Device Dissipation at (or
1. Hill I.
mint
otpllii
Dirali Hatarly to
3. Oarata
'Indkotai JE0EC
what tha tatt-aralltar
«•*
17S*C IhmIi ttmptratara
llntnly It 17S*C
cut
It
.
.
.
.
....
ma
mw mw
175
Operating Collector Junction Temperature
— o5°C
Storage Temperature Range
NOTES:
v
s v
Emitter-Base Voltage
to
+
C
200*C
apan- clrcaM.
at Hrt rati tf 2.0
m/C*.
ttaptiatuct at tha rata af 4.0 arw/C*.
nfMataf ColkKror-lmHtor Ireokdom
Icio
temperature
free-air
1
ma.
40
350
25
4.0 x
1.0
4
io-
/undo
400
150
SmaH-Sitnal Comnan-Emiltor
K\
Forward Current Transhr Rath)
fia. f
= 30
mc
1.0
li)
Common-tost Ontn-Cutuit
C*
¥c*=5y.
Output Copodtonc*
•operating, characteristics at
25*C
Avaron* Nob* Figure
TIwm yw wtil wi HMMt bt nii iw ii Kfc|
5.
Icu
•MtaN»
***
bt
JEtEC ntliMiW
m
&u
1
mc
1
fl
l
C |o •»
=5
v, lc
=
10 /M, l«
=
10
kn
2N930
MAX
MAX
UNIT
4
3
4b
prist
tUvtti
I.
PW
= SM
juk, Mir Cfd.
<
i%.
MlalltlWH.
Mi.
PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
>
2N929
Nois* lonowktttt 10 cps to 15.7 kc
4.
My
=
TEST CONDITIONS Vc*
VOTESt
f
free-air temperature
•ARAMITER to
hj-0.
ORDER TO IMPROVE 0ESICN AND TO SUPPLY THE BEST PRODUCT POSSIBLE
POST OFFICE BOX 5012
e
DALLAS. TEXAS 75222
mm
mm,
a, 21730, types 2ieae, mmi, ww. 2N73V2m5S.'.2N1420, 2N1507. 2N1613. 21,1711 N-P-N SILICON TRANSISTORS 1
BULLETIN NO. OL-S 693471, MAY 1963- REVISED AUGUST 1969
Highly Reliable, Versatile Devices Designed for
and
Amplifier, Switching
ma
from 150 ma,
to
•
High Voltage
•
Useful h FE
•
dc to
30 mc
Low Leakage
Over Wide Current Range
data
Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and
2N956 are
in
Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and 2N1711 are
THE COLLECTOR
TO-18
IS
TO-5
CONTACT WITH THE CASE
IN ELECTRICAL
JEDEC TO-18 packages. JEDEC TO-5 packages.
in
TO-5
TO-18
maximum
absolute
ratings at 25 °C frse-air temperature (unless otherwise noted)
2N717 2N718A 2N730 2N731 2N718
2N696 2N697
2N956 2N1420 2N1507 2N1613 2N1711
UNIT
Collector-Bast Voltage
60
60
75
60
75
60
75
75
v
Collector-Emitter Voltage (See Note 1)
40
40
50
40
50
30
50
50
V
5
7
5
7
7
V
32
Collector-Emitter Voltage (See Note 2)
5
Emitter-Base Voltage
7
5
Total Device Dissipation at (or below)
0.6
0.4
25 °C Free-Air Temperature (See Note Indicated in
Parentheses)—*»-
Total Device Dissipation at (or below)
(See Note Indicated in
Parentheses)—•>
1.
This value applies
value
applies
the
3. Derate
linearly
to
175°C
4.
Derate
linearly
to
17J°C case
5.
Derate linearly tt 175°C
bate-emitter
free-air
free-air
t
tt (»)
(7)
(3)
(10)
(10)
2.0
1.5
1.8
1.5
1.8
2.0
3.0
3.0
t
tt
w
t
tt
(4)
(«)
(8)
(«
(8)
(4)
(11)
(11)
1.0
0.75
1.0
0.75
1.0
1.0
1.7
1.7
w
200
200
°C
t
n
175t
175tt
resistance
(ft
K
Is
)
t
tt
equal
died*
is
200
to
or
175tt
less
» M-clrevIted.
temperature at
the
rate
of
4.0
temperature at
Hie
rate
of
13.3
temperature at the rate of
4. Derate
linearly
to
175°C case
temperature at the rate
of
7.
Derate
linearly
to
200*C
temperature
of
8.
Derate linearly to
9.
free-air
w
(7)
10 ohms. 2. This
0.8
(5)
200
-*5°C
when the bow-emitter
a
0.8
tt
Storage Temperature Range
NOTES:
0.6
t
100°C Case Temperature Operating Collector Junction Temperature
0.5
(3)
25 °C Case Temperature
Total Device Dissipation at
0.5
0.5
V
1.0
1.0
1.0
Collector Current
at
the
rate
n
r/C*.
,/C.
200*C case
temperature at the rate of
linearly
to
17S*C
free-air
temperature at
rate
of
3.33
linearly
to
200°C
free-air
temperature at the rate
of
4.54
11. Derate
linearly
to
200"C case
temperature
of
the
rate
10.3
17.2
175t 200°C
fTexas Instruments guarantees Its types 2N696, IN697, 1N1420, and 2N1507 to bo capable of Ike
Sam* dissipation as registered and shown INltlJ and 2N1711 with appropriate factors shown In Notes 10 and 11.
for typos
doraflng
-A", r/f.
1.84(1
Derate
at
b
2.47 n 10.0
10. Derate
the
-A*.
than
to
n
'A*. .A*.
i
'A*.
tfToxas Instruments guarantees Its types 2N717, 2N718, IN7J0, and 2N731 to bo capable of the same dissipation as registered and shown for types 2N71SA and 2N9S6 with appropriate derating factors shown In Notes 7 and B.
mw,A*.
•Indicate JE0EC ngistend lota.
USES CHIP N24
4-54
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS, TEXAS 75223
TYPES 2N718A, 2N9S6.
2 N 14 20. 2N1507. 2 N 16 13, 2N1711
N-P-N SILICON TRANSISTORS electrical characteristic* at
25*C free-air temperature (unless otherwise noted) TO-lS-c*
Tin CONDITION S
PARAMETER
"iMCM
Collecterleu Ireakdaam V«tt«t»
*I«|CK)
Cellecler-Emlttef
'(«IC»
Collector-Emitter Breakdown Valtag*
*imuo
Emitter-Rate
Midn Vallate
Onekdawn Vallate
Collector Celaff Current
'en
= IN |M =
= M M. c = IN M = IN M> Vc , = Nu, »> »CI = »CI = *• »ct = « ¥„ = ».. »„ = 1a = »„ = *Ci = M c
l
I
l
E
•-
«•
Cored Curreat
'c«
Collector
'ao
Emitter Color!
CurMt
5 ,.
10 ,. ID ». «.
Sialic Forward
h
Carnal
Trontfir Rail*
= tu =
M
c =
10(1,
50
Saa Nata It
30
l,
0,
tA
= ISO'C
l
0.
l
¥
30
7
= = E = t = I K = 100 c = o c = c = IN Ma ma. c = ma. c =
TA
=
1.0
1.0
IN
so
50
f
7
V
M« M«
0.010
0.010
10
10
150'C
M« M«
Me
10
kf)
IN
0.01
i
Ma
0.NS 20
10 /ia
l
»
IS
o
l,
UNIT
75
00
Saa Halt li
».
'l
i
2N9M
2N71IA
2NI711 2NH13 2N1420 JN1507 MIN MAX MIN MAX MIN MAX MIN MAX 75
l.
c
l
TO-S-e»
20
35
l
10
Sn
Mala It
35
75
l
10
t
= -55*C.
20
35
l
A
Saa data II
= = = M, = 15 -a. ' »C. = »C1 = " »C1 = s
¥„ »d »«
Rote-Emitter Voltage
V C«hH
CoHorter-Emltter Sateretiea Velleee Smell-Signal Cemmen-tufe
»ib
Input Impedeace
l
c
Saa Data It
40
10 ..
l
c
Data It
20
1$
1,
1,
»
«•
»•
Small-Signal
«rb
Common-lew
ketone Vollaga T rentier Into
=» »C. = »CI
Sotoll-Slgnol
"•b
«(.
Common-lose
Vc
Smell-Signal Cerumen-Emitter
»Ci
Forward Current Transfer Rati* Smell-Sigeel Common-Emitter
K\
Forward Carnal Tremter Ratia
c
not
cone
measurement.
registered data
PRINTED IN U.S.A.
Instruments Texas INCORPORATED TEXAS INSTIUMENIS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
POST OFFICE SOX S012
•
DALLAS. TEXAS 75222
4-55
TYPE 2N997 N-P-N DARLINGTON-CONNECTED SILICON TRANSISTOR BULLETIN NO. DL-8 7311677, MARCH 197S-REVI8ED MARCH 1973
TWO TRIODES INTERNALLY CONNECTED IN •
DARLINGTON CONFIGURATION
Very High Gain ... 1000 min
•
Low Leakage.
•
Rugged
..
nA max
10
at
at
100 m A
V
60
Internal Connections
'mechanical data
THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE ALL JEDECTO-18 DIMENSIONS AND NOTES ARE APPLICABLE IN INCHIS
UWtM
OTHIffWIM
inciriio
'absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
75V 40V
Collector-Base Voltage
Collector-Emitter Voltage (See Note
1)
7V mA 0.5 W
Emitter-Base Voltage
3 °0
Continuous Collector Current
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
1-5W -65 C to 200 C 30 °
Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds 'electrical characteristics at
25° C free-air temperature (unless otherwise noted)
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown Voltage
'CBO
Collector Cutoff Current
'EBO
Emitter Cutoff Current
Static
"FE
MIN
TEST CONDITIONS
PARAMETER v (BR)CBO v (BR)CEO v (BR)EBO
iC- 100 «iA, IC " 30 mA, l
E - 100
Collector Reverse Current
V CB
loo
Collector Reverse Current
Vc , TA
Iebo
Emitter Reverse Current
"(KICK)
Collector-Base
VE,
Breakdown
l
c
Typo
Mai.
Min.
Unit
= -30v,l = = —30v,l = = +150°C = -2v,l c = = —100/ua, E =
—50
V
=—100ma,l
—35
V
—50
V
E
—1.0
jua
E
—100
1*
—100
M"
l
Voltage
*V|«)CEO
Collector-Emitter
Breakdown
Ic
=0
B
Voltage *V(Kl|CER
Collector-Emitter
Vce
= = =
-10 V,
2N1131
20
45
Ic
=—150 ma
2N1132
30
90
Vce
=
Breakdown
Ic
RK
Voltage
DC Forward Current
*hfE
Transfer Ratio
DC Forward Current
*hre
—100 ma, 10 ohms
—10 v,
= —5 mo
Ic
Transfer Ratio
•v*
Base-Emitter Voltage
l
*VcE|Mt|
Collector-Emitter Saturation
1,
2N1131
15
2N1132
25
= —15ma,lc = —150ma = —15 ma, Ic = —150 ma
B
—1.3
V
—1.5
V
Voltage
K
AC Common-Emitter
VC e
Forward Current
f
= — 10 v, Ic = = 20me
—50 ma
2N1131
2.5
2N1132
3
Transfer Ratio Cib
= -0.5v,l c = = lmc V c , = — 10v,l = = lmc Ic = — Vce = — 5 = lkc
Common-Base Input
VE .
Capacitance
Cob
Common-Base Output
E
Capacitance
K
80
p«
45
r*
f
f
AC Common-Emitter
v,
Forward Current
1
ma
f
2NU31
15
50
2N1132
25
100
2NU31
20
2N1132
30
Transfer Ratio
K
AC Common-Emitter
Vce
Forward Current
f
= — 10v, Ic = —5 ma = lkc
Transfer Ratio
hib
AC Common-Base Input Impedance
Vc»
—
f
1
= = Vc = = Vc, = = f Vc = = Vc, = = Vc = = ,
f
hob
AC Common-Base Output Admittance
,
f
hrb
AC Common-Base Reverse Voltage Transfer Ratio
f
,
f
'These measurements must be
made
=
5 v, l E
1
ma
25
35
ohms
10
ohms
1
/xmho
5
/a
kc
—10 v,
l
E
=
5
ma
lkc
—5 lkc —10
=
v, Ie
v,
l
E
1
=
ma 5
ma
mho
lkc
— lkc —10
5 v, l E
v,
lE
=
1
ma
8x10-*
= 5 ma
8xl0" 4
lkc
with a pulse duration
^300
microseconds and a duty cycle
=£2
percent.
PRINTED IN U.S.A.
Texas INCORPORATED Instruments POST OFFICE BOX 9012
•
DALI.AS.
TEXAS 79222
TEXAS INSTRUMENTS DESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
-
TYPES 2NH49 THRU 2NH53 N-P-N
GROWN-JUNCTION TRANSISTORS
BULLETIN NO. DL-S 692237, DECEMBER 1961-REVISED APRIL 1969
Oval Welded Package
HMCIMNIICttl sfOfO
The
transistor
Unit weight
is
is
an oval welded package with
in
approximately
AU
r
LEADS
1
1
glass-to-metal hermetic seal between case
and
gram.
AM
INSULATED FKOM THE CASE
a
HAM
1
0.1*2
± 0.010± 0.010
0.041
0.100
r ablTO ±0.005
*ab*otut*
maximum
±0.010-
AU PmWMI IONS M MCHIS
rating* at 2S*C free-air temperature (unlet* otherwise noted)
45 v
Collector-Base Voltage Emitter-Base Voltage
1
—25 ma
Emitter Current Total Device Dissipation (See Note 1) Total Device Dissipation at 100*C Free- Air Temperature
Total Device Dissipation at 150*C Free- Air Temperature Collector Junction Operating Temperature
11
•IMkaM
rw
MMJSfJffM At
JESEC
MfMm<
150 100 50
mw mw mw
+175*C
—o5*C to + 175*C
Storage Temperature Range
RvTC
v
25 ma
Collector Current
MVfJMN ttts^MSMni, Me MftJtMf
UfVI*
«ttt.
Instruments Texas INCORPORATED POST OFFICE BOX 5012
e
DALLAS, TEXAS 79232
4-63
TYPES 2NH49 THRU 2N1153 N-P-N GROWN-JUNCTION SILICON TRANSISTORS
electrical characteristics at
25*C free-air temperature (unlais otherwise noted)
parameter
teit cendltient
= 30 v V CI = 30» T* = lSO'C Vei = 5 v TA = 100°C Vci = 5 v T* = 150°C lc = 50/ua
Icio
Veto
Collector Cutoff Currant
Colltttor-lait
Breakdown
types
I,
= =
ALL
U
=
ALL
I,
=
ALL
J
f
=
ALL
l
e
=
l
t
=
l
(
= -1 ma
VCi
I,
min*
max*
»YP
unit
2
/M pa
10
(U
50
/ta
AIL 3
0.5
45
¥
Vortajs rciiuti
DC Collector-Emitter
=
li
2.2
ma
5
ma
ALL
100
ALL
7
2N1149
12
ohm
200
Saturation Resistance
C,b
Common-Ion Output
Vc.
Capacitance
fhA
f
Common-last Alpha
=
Vci
=
5 v
=
5 v
Cutoff Frequency
2N1150 2N1151
13
15
2N1153
AC Common-last Forward Currant Transfer Ratio
h| b
AC Common-Bast
f
AC Common-last
=
=
VC i
Output Admittance
h,b
f
Vci
Input Impedance
h*
Vci
f
AC Common-last Reverse Voltogt Transfer Ratio
=
Vci
=
f
=
5 v
l
{
=
-1 ma
1kc
=
5 »
mc
14
8
2N1152
hfe
n
1mc
li
2N1149
-0.9
-0.925
-0.953
2N1150
-0.948
-0.96
-0.976
2N11S1
-0.948
-0.975
-0.989
2N1152
-0.9735
-0.98
-0.989
2N1153
-0.987
-0.99
-0.997
li
= -1 ma
ALL
l|
=
ALL
l(
= -1
30
42
80
ohm
0.4
1.2
funho
lke
=
5 v
-1 ma
lkc
= 1
5 ¥
ma
ke
2N1149
120x10'*
500x10-*
2N1150 2N1151
250x10* 400x10*
1000x10* 1000x10*
2N11S2
400x10'*
1000x10-*
2N1153
400x10*
1000x10*
•Indkatet JEDEC riglstortd data
functional tests at 25°C free-air temperature parameter
t«t cendltient
= 20 ¥ = lKn = lkc
Vci Gp,
Common-Emitter
Re
Power Gain »
NF
Spot Noise Figure
max
typ 35
e
2N1150
39
H.
2N1151
39
2N1152
42
2N1153
42.5
= -2 ma = 20Kn V, = 0.02¥ l
= 5¥ c = = Re = lKO 8W = cydt/stc Vce
mln
typet 2N1149
do
-1 ma
l
»
unit
1
kc
ALL
20
db
1
DISSIPATION DERATING
CUR VI
POWER GAIN TEST CIRCUIT
S
NOTE:
G p,
\
=10 °° i*
k
1M
100
SO
?
A -FREE
Alft
TEMfEBATuftl
200
-C'
PRINTED IN U.S.A.
4-64
Instruments Texas INCORPORATED POST OFFICE BOX 9012
•
DALLAS. TEXAS 79223
Tl
tonnot assume any responsibility for any circuits shown
or
represent
that
they
are
free
from
patent
46
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
,
N-P-N
TYPES 2NH54, 2NH55. 2N1156 GROWN-JUNCTION SILICON TRANSISTORS BULLETIN NO. DL-S 682269, JANUARY 1962-REVISED MAY 1S68
FORMERLY TYPES 951, 952, AND 953, RESPECTIVELY
mechanical data The
transistor
Unit weight
is
is
in
an oval welded package with glass-to-metal hermetic seal between case and leads. 1 gram. The mounting clamp is hardware supplied with the transistor.
approximately
All LEADS ARE INSULATED
\ •^
H
L— l.4N:0JMt
- -I
FROM THE CASE
11UOS
(—1
I
1
o.o*t
All tPOi
'absolute
maximum
B
= aw*
0.110
sUIS
-0.1 to
= 0.01 s
OIMMMOM m
MKOMMINMO ASKMtlY
INCHES WITH MOUNTING
CUM»
ratings at 25°C case temperature (unlessotherwlse noted)
2N1154 2N115S 50 v
Collector-Base Voltage
Total Device Dissipation (See Note 1)
NOTE
1-
80 v
ma
-4
750
mw mw mw
Total Device Dissipation at
1
00°C Case Temperature
^
300
Total Device Dissipation at
1
25 e C Case Temperature
^
150
Collector Junction Operating Temperature
-4
Storage Temperature Range
-<
Dmli
llnraily lo
1S0°C eon timpnitiin
at tin rati of
120 v
50
60 ma
Collector Current
2N1156
40 ma
150°C
—55°C
to
150°C
y y y
y y
mw/'C.
•Indkaltl JEOEC rtjlltntd data
Instruments TexasINCORPORATED POST OMlCE BOX 8012
*
DALLAS. TEXAS 78222
4-65
TYPES 2NH54. 2N1155, 2N1156 N-P-N
GROWN-JUNCTION SILICON TRANSISTORS
"electrical characteristics at
25°C case temperature
Icio
Collector Cutoff Current
Base-Emitter Voltage
C E[..tj
max
unit
=
50 ¥
l
E
=
2N1154
5
/"
V C1
=
80 v
l
E
=
2N11S5
6
/M
Vc .
=
120v
U
=
2N1156
8
jlco
B
=
2.2
ma
lc
=
20
ma
2N1154
1
¥
Is
=
2.2
ma
l
c
=
15
ma
2N11S5
1
V
1,
=
2.2
ma
l
c
=
10
ma
2N1156
1
¥
B
=
2.2
ma
c
=
20
ma
2N1154
300
ohm
Ib
=
2.2
ma
l
c
=
15
ma
2N1155
350
ohm
Is
=
2.2
ma
l
c
=
10ma
2NU56
400
ohm
l
E
=
-5ma
l
r
min
Vcb
l
VM
type
test conditions
parameter
DC Collector-Emitter Saturation
l
Resistance
hft,
AC Common-Base Forward Current Transfer Ratio
Vcb=10v f
=
Vcb tin,
AC Common-Base Input Impedance 1
=
2N1154 2N1155
lkc
=
-0.9
-1
2N1156
10 v
l
= -5 ma
E
2N1154 2N1155
30
ohm
kc
1
2N1156
Vcb= h„b
AC Common-Base Output Admittance f
=
10 *
= -5 ma
•.
2N11S4 2N1155
2
/umho
1kc 2N11S6
h rb
AC Common-Base Reverse Voltage Transfer Ratio
Vcb f
=
=
10 v
= -5 ma
lE
2N11S4 300x
2N1155
10"'
lkc 2N1156
'functional tests at 25 °C case temperature
= 28 ¥ = kfi V, = 0.2 ¥
V Ce RL
G„.
Common-Emitter Power Gain (See
Circuit)
l
f
1
= 45¥ = 2 kO V, = 0.2 ¥
VCe
l
Rl
f
= *7.5¥ = 4 kn V, = 0.2¥
*MI«t«
4-66
JEDEC rtgliHud
= =
c
1
= =
c
1
= =
Vce
lc
Rl
f
1
20
mo
kc
kc
10
db
2N1155
30
db
2N11S6
30
db
ma
kc
Instruments Texas INCORPORATED •
30
15ma
(
POST OFFICE BOX 5012
2NU54
DALLAS. TEXAS 7S222
—
'
N-P-N
TYPES 2N1154, 2N1155, 2N1156 GROWN-JUNCTION SILICON TRANSISTORS
POWER GAIN TEST CIRCUIT 1:1
1:1
T-©
v. («•») 100 .n.
50 V (
G P .-10 22
«. ,„«(-£)•
n
w\,
,,
loon
5
K.A
-AAA^—
TYPICAL CHARACTERISTICS
COMMON -BASE CHARACTERISTICS
COMMON
BASE CHARACTERISTICS
vs
vs
EMITTER CURRENT
CASE TEMPERATURE
— nr f h
10
1
-VCB =10 _TC =25° C
H
hrb"--
1
1
h rB
+h|b
rb
"ob
0.5 ~
-i
—
UJ .
10 v
+ h, b
1
^.
I
= -5 ma f
5
> »—
I
I
/
>
>
1
h, b
t-ib
^>
hob 7"
h ob
h,h
UJ
1
J,
+ h
(
b
0-3
U
0.2
0.1 -2
-1
-5
|
E
-10
-20
— EMITTER CURRENT— mo
-50
-100
y
0.2
0.1
-100
50
-50
,
3
—
°
200
C
PRINTED IN U.S.A. Tl
cannot assume any responsibility for any circuits shown
or
represent
that
they are
free
from
patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
150
100
CASE TEMPERATURE
Tc
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TexasINCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
4-67
2N717. 2N718, 2N718A, 2N730, 2N731. 2N956, 2N1420. 2N1S07. 2N1613, 2N17I1
TYPES 2N696, 2N68?,
N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 693471,
MAY 1963-REVISED AUGUST
1969
Highly Reliable, Versatile Devices Designed for Amplifier, Switching
from «0.1
ma
ond
Oscillator Applications
>150 ma,
to
•
High Voltage
•
Useful h FE Over
•
dc to
30 mc
Low Leakage Wide Current Range
'mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and
2N956 are
2N17H
Device types 2N696, 2N697, 2N1420, 2N1507, 2N1613, and
THE COLLECTOR
TO-18
IS
in
are
JEDEC TO-18 packages. JEDEC TO-5 packages.
in
CONTACT WITH THE CASE
IN ELECTRICAL
TO-5
TO-18
maximum
absolute
ratings at 23°C free-air
temperature (unless otherwise noted)
2N717 2N718A 2N730 2N731 2N718
2N696 2N697
2N171! 2N956 2N1420 2N1507 2N1613 60
75
75
V V
Collector-Base Voltage
60
60
75
Collector-Emitter Voltog* (See Mots 1)
40
40
50
40
50
30
50
50
5
7
5
7
7
(Sm Not*
CollMtor-Emittir Voltage
7
5
5
Emittor-losa Voltage
Dissipation at (or bolow)
Dsvia
25 "C free-Air Tomporatur*
(Sm Not* Indkoted
in
*
Parentheses)—
Total Device Dissipation at (or
Mow)
0.6
0.4
(Ss* Not* Indicated in
Devke
Parentheses)—»»
Dissipation at
1.
TMi nlao 10
epolitl
nlw
(3)
(10)
(10)
2.0
1.5
1.8
1.5
1.8
2.0
3.0
3.0
t
tt
(4)
laia-Emltlar Vallafa
'cButl
Callactar-Emlttar Sararatlaa
1,
VtUaat
Small-Sloael Cammaa-laia
'lb
15
1,
'-
lapat Impia'aaca
«.
»•
Small-Sigaal Cammaa-laia
"rb
lȴtrta Valtafa Traasnr latia
»c. = » »CI = 5 •
«.
*
Ourpat
SaMll-Slgaal Cantmaa-Eaittar
»
5<
IO"*
IO"*
kc
1
kc
0.1
I.S
0.1
o.s
/xmaa
1
kc
0.1
1.0
0.1
1.0
jumka
1
kc
30
IN
SO
M0
1
kc
35
150
70
300
3.1
300 /uac, Daty Cyclt
2.5
25
2.5
35
3.S
35
N
Sm operating and twitching charactarirfc* for typa* 2N718A, 2N956, 2N1613, and 2N171 1
NOTE
300
40
1.5
1
E
IN
300
I.J
1
l
IN
1.5
5
l
»0
Sat Data 12
l
1
l
IN
Sat Halt 1!
= = = = = = 10 mc
l
120
«
2%.
Palla
25
af
N
•1
on paga 4-30.
vMtk matt
aa lack thai
kaMng
at daakllag doat aal caait
atcancy af rat
JEIEC n|liliral aata
PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS IHSTIUMENTS RESEKVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIIIE.
POST OFFICE BOX 8012
DALLAS, TEXAS 79224
4-69
TYPE 2N1566 N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 731 1958, MARCH 1973
FOR GENERAL PURPOSE AMPLIFIER APPLICATIONS 60 V Min • V(BR)CEO .
•
hpE
-
•
60 to 200
mechanical data
THE COLLECTOR
IN
IS
ELECTRICAL CONTACT WITH THE CASE
mALL DIMENSIONS ARE
S3 "»
1
-
IN INCHES UNLESS OTHERWISE
1
SPECIFIED
0.W0MIW
f*
3
J-mj
OUTLMI IN TM« ZONE OPTIONAL
[TAIL* OF
LEADS
L-a
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE* 'absolute
maximum
ratings at
25°C
free-air
temperature (unless otherwise noted) 80 60 5
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds electrical characteristics at
Collector-Base
ICBO
Collector Cutoff Current
'EBO hc E
Emitter Cutoff Current
Forward Current Transfer Ratio
VgE
Base-Emitter Voltage
VcElsat)
Collector-Emitter Saturation Voltage Smalt-Signal
hie
Common-Emitter
l
Ib = 6.
VcE"5V,
l
l
hfe
V CE V CE V CE
Common-Emitter
Forward Current Transfer Ratio
=
5V,
See Note 3
T A =150"C
l
l
- B V,
l
10*
mA,
c =5mA,
See Note 3
60*
200*
See Note 3
0.35*
1.5*
Common-Emitter
Forward Current Transfer Ratio
Common-Base Open-Circuit °
NOTES:
1
Output Capacitance
f=1kHz
c =1mA f
80* -
1
kHz
.
c =5mA,
f=30MHz
Vcb -
l
E -
f
when the base-emitter diode is open-circuited. 175° C free-air temperature at the rate of 4 mW/°C. These parameters must be measured using pulse techniques, t^, = 300
ma
V V kn
200*
40
l
0,
1.8*
MA
60
c - 5 mA C - 5 mA,
V CE -5V, 6 V,
1*
See Note 3
T A - -55° C Small-Signal
100
C=
lc=10mA, lc=10mA,
- 5 V,
V
60* 1*
E= E -0,
lc - 5
l
V
80*
Ie
Input Impedance
Small-Signal
=
l
l
MAX UNIT
MIN
TEST CONDITIONS
c =10|iA, c =10mA, V CB - 40 V, Vcb = 40V, V EB = 5V, Vqe - 5 V, lB = 2mA, lB = 2mA,
Breakdown Voltage
Collector-Emitter Breakdown Voltage
Static
50 mA 600 mW —65 C to 200^0 230 C
2)
25° C free-air temperature (unless otherwise noted)
PARAMETER V(br)CBO V(BR)CEO
v v v
-
1
MHz
2
10*
pF
This value applies
2. Derate linearly to 3.
The JEDEC •
registered outline for this device
JEDEC registered deta.
is
TO-5. TO-39
This data sheet contains
all
falls
Ms,
duty cycle
< 2%.
within TO-5 with the exception of lead length.
applicable registered data in effect at the time of publication.
USES CHIP N23 PRINTED IN U.S.A.
4-70
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 7S222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN ANO TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N69S, 2N697,
2N717, 2N718, 2N718A, 2N730, 2N731, 2N956. 2N1420, 2N1507, 2N1613, 2N171T
N-P-N SILICON TRANSISTORS
BULLETIN NO. DL-S 693471, MAY 1963-REVISED AUGUST 1969
Highly Reliable, Versatile Devices Designed for
and
Amplifier, Switching
ma
from 150 ma,
•
High Voltage
•
Useful h FE
•
dc to
30 mc
Low leakage
Over Wide Current Range
'mechanical data Device types 2N717, 2N718, 2N718A, 2N730, 2N731, and 2N956 are in JEDEC TO-18 packages. Device types 2N696, 2N697, 2NU20, 2N1507, 2N1613, and 2N1711 are in JEDEC TO-5 packages.
"""HI"-!
THE COLLECTOR
TO-18
ELECTRICAL
IS IN
CONTACT WITH THE CASE TO-18
'absolute
maximum
2N696 2N697 UHettor-imitter Voltage
(Sm Nats
1)
Collector-Emitter Voltage
(Sm N«ts
2)
2N717 2N718A 2N730 2N718 2N731
60
60
40
40
75
60
75
60
75
75
50
40
50
30
50
50
5
5
7
5
7
7
5
CoDoctor Current
1.0
Total Dsviai Dissipation at (or below)
0.0
0.4
t
tt
S 25 C Free-Air Temperature Parentheses)—*>
Total Device Dissipation at (or below)
25*C Cos* Temperature (Sm Note Indicated in Parentheses)—o»
0.5
Operating Collector Junction Temperature
TMi volw apalln than
TMi viIm
9.
Urate llHMriv
10
l*t tat-Miltt«
(7)
2N1613 MIN MAX
E
,
Collector Cutoff Currtnt
2N718A
TO-S-o-
E
l
R
l
2N95S
TO-lS-t.
0.005
fia
20
10 fj>
(J"
»,
l
10 »,
l
10
See Note 12
10 «,
l
10
T
A
= -SS"C,
20
35
35
75
20
35
See Note 12
= = — = V CI = V C| = V CB =
Base-Emitter Voltage
»«s
Input Impedance
Small-Signal Common-Base
»rb
Reverse Voltage Transfer Ratio
Output Admittance Small-Signal Common-Emitter
"to
Forward Current Transfer Ratio Small-Signal Common-Emitter
K\
Forward Current Transfer Ratio
Common-Bast Optn-Circuit
«ob
Output Capacllanct
*
Input Capacitance
300
300
100
c
Set
12
40
l
c
Set
12
20
Stt
12
1.3
1.3
1.3
1.3
V
Stt
12
1.5
1.5
1.5
1.5
V
15 ma,
B
15 ma,
l
l
1
f
1
kc
24
34
24
34
l
ohm
10
l
5
f
1
kc
4
8
4
I
ohm
f
1
kc
»,
5 »>
'
,
l
,
5 y,
l
,
10 v,
l
5 v,
l
10 «,
l
Vc ,
=
VE ,
=
40
5 v,
10 v,
Common-Bast Optn-Clrcult «ib
100
300
l
Vc = Vc = Vc = V CE = V CE = V CE =
Small-Signal Common-Base
»c*
100
v,
10 »,
1,
Small-Signal Common-Bast
"lb
120
10
V CE l
Collector-Emitter Saturation Voltage
Note = ISO ma, Nott = 100 ma Nott c = 150 ma. Note c = 150 ma, = c = ma, = c = ma, = " = 'c
V CE
10
»,
10
v,
0.5 v,
l
c = c = c = c = c =
1,
l
=
=
c
1
mc
25
f
=
1
mc
BO
f
1
ma,
f
5
ma,
f
0,
5x 10-4
=
f
0,
3* 10-«
f
mo,
5 ma,
50 mo.
10*
4 io-
f
f
=
c
5>
= = = = = = 20 mc
5 ma.
1
3l
1
kc
1
kc
0.05
0.5
0.05
0.5
jtunho
1
kc
0.1
1.0
0.1
1.0
jumho
1
kc
30
100
1
kc
35
150
3.0
2.5
2.5
35
50
200
70
300
3.5
35
25
P>
80
Pf
operating characterUtlcs at 23°C free-air temperature PAfttMITM
CONDITIONS
TiST
Vc, NT Spot Moist Fljwt
R,
= 10 = 510
v, lc
O,
f
ro-ii—
2N9S6
K»-S—
2N1711
= 300 iu = kc
2N71SA
MAX
TYP
MAX
S
s
6
12
TIST
TO-3—a.
CONDITIONS
2N71IA 2N1613 TYP
Sot Figure
t, Total Switching Tintt
BOTE
12:
Thiw a
'Indicates
parameters mint bt measured using pul» techniques.
change grater than
JEDEC
the
required
accuracy ef
tin
PW
1*
5
20 300
ftm.
Duty Cycle
< 2%.
PuIm width must be such
UNIT
MAX 30
that halving or doubling does not
UK couh
mtoiurwrnnt.
registered data
*The referenced
figure
is
shown on page
4-30.
PRIMED
4-72
db
1
TO-lS-o>
•ARAM STIR
UNIT
2N161S
TYP
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS, TKXAS 7S222
IN U.S.A.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANV TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE 8EST PRODUCT POSSIBLE.
TYPES 2N1671, 2N1671A. 2N1671B. 2N2160 P-N BAR-TYPE SILICON UNIJUNCTION TRANSISTORS BULLETIN NO. DL-S 683189, OCTOBER 1962-REVISED MAY 1968
Designed for Medium-Power Switching,
and Pulse Timing
Oscillator
• Highly and
Circuits
Stable Negative Resistance Firing Voltage
• Low Firing Current • High Pulse Current CapaUHies
•
Simplified Circuit Design
'mechanical data Package outline
is
similar to
JEDEC TO-5
except for lead position. Approximately weight
is 1
gram.
"All IfAOS INSULATED FROM CASE. NOTES
This zone is controlled
A.
malic
landing
The
for auto-
variation in
actual diameter within this zone shall
I
not exceed 8.010. B.
Measured Inn max. diameter ot
the actual device. C.
The
specified lead diameter ap-
plies in the zone between 0.050
0.250 from the base seat.
O.BOand l.Smaximum
and Between
of 0.021 diam-
Outside ol these zones the lead diameter is not controlled. eter is held.
DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
'absolute
maximum
ratings at 2S*C free-air temperature (unless otherwise) noted) JNi«7i
iNiiee
2NIS7IA
2NH71S
— 30v
Emitter-Base Reverse Voltage Emitter-Base Reverse Voltage below Interbase Voltage
140*C Junction Temperature
-30 v .'.'.'.'
RMS Emitter Current DC Emitter Current
\
1. Caaaclrtr
diidwit
1.
Baralt llMorlr It
I.
Ttni iMtnniMii
4.
Tun
'Indicates
JEDEC
— IS id
tc It", 30
MlH
140*C frtMh Ituptrah.™ gwrarilni
tnttHwiti gai'MIMi •
•
mailman
mxtimm
Him-
ttltl
laltrem
it tat rait t) J.t
•ptratlai
amr
m/*C.
tmatfatan
tl
(
diuiaalian aurlt at
1NH7I
17S*C
win
Irti-alr.
ttly.
InalM If uNnnl
MMfml
Btratt llnteri>
rtilittnu it tl IIm
35 y 70 ma
\
Peak Emitter Current (See Note 1) .'!!!.' Peak Emitter Current below 140*C Junction Temperature Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Notes 2 & 3) Operating Temperature Range (See Note 3) Storage Temperature Range (See Note 4) Lead Temperature Xi Inch from Case for 10 Seconds
ROTES:
35 v 50 ma 2a
450 mw _ 65*C — 65°C 260°C
2a 450 mw # to 140 C to 150*C 2&0*C
ciKaHrf.
cm
rait tf
1
= O.H*C/am.) m»/*C.
iNmmji maatratun it I7S*C.
rt|iiltrtd data
TexasINCORPORATED Instruments POST OFFICE BOX 5012
DALLAS, TEXAS 78223
4-73
TYPES 2N1671, 2N1671A, 2N1671B. 2N2160
BAR -TYPE SILICON UNIJUNCTION TRANSISTORS
P-N
'electrical characteristics at PARAMITill r
N
Static laftrfctM
TfST talltiact
Inlrtmk StaaMf
l|2(me•».
i
(
= Mm
= JS. = '••. = » »m = »««B = '»0 =»», R,, = Ma
M
m
-it
-it
-1.1
-12
M«
H
8
«
H
M«
5
S
S
1.1
'«=•
»B „
»
'i
1
1
V,
f
1
1
1
aw
1
1
1
»
SaoFlfml *Ind.MtK JEOEC
register*! -o»o
PARAMETER MEASUREMENT INFORMATION _
•n
Intrinsic
Standoff Rotio -
V tlit
V F* *"•'• V F
*
«b»«* 0.56
'»
used to measure
circuit
is
defined
in
of the equation:
volt
at
term*
Vp
tj
25°C and decreases
millivolt s/deg
Tl iA,
Breakdown Voltage .. „ Breakdown Voltage
•
Static
hFE
Forward Current
Transfer Ratio
10
mA
Ib = 0,
See Note 6
Collector-Emitter
Saturation Voltage
ic = o
10 uA,
V C8 = 50V V CB - 50 V V EB = 3 V, V c e = 10 V Vce = 10V, v C e - iov. v C e -iov. V CE - 10 V, Vce - 1 v.
E
-0
>E
= 0,
l
60
60
V
30
30
30
V
5
5
T A -1S0°C
ic = o
B
10
10
10
10
10
10
10
IC-100mA =
mA mA
35 50
12
25
17
35
1S0mA IC" 500mA
20
1
IC"
60
10
20
IC" 10
Time
l
B (2)
and current values shown are nominal; exact values vary
referenced figure, are
I
=
l
B(1 ) =
15mA,
See Figure 1*
-
lc= 150 mA,
— 15 mA,
slightly
UNIT
TYP
1,
l
B (i) = 15mA,
190
23
See Figure 2*
with transistor parameters.
shown under Parameter Measurement Information
for types
2N2217 through 2N2222
or
TI81M. page
4-96.
PRINTED IN
4-102
Instruments Texas INCORPORATED POST OFFICE BOX 5012
»
DALLAS. TEXAS 75222
U.S.A.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME ORDER TO IMPROVE DESIGN AND TO SUPPtr THE IEST NODUCT POSSIBLE.
IN
TYPE Q2T2222
QUAD
N-P-N SILICON TRANSISTOR
BULLETIN NO. DL-S 7311703, APRIL 1972-REVISED MARCH 1873
DESIGNED FOR MEDIUM-POWER SWITCHING
AND GENERAL PURPOSE AMPLIFIER APPLICATIONS I
High Breakdown Voltage Combined with Very-Low Saturation Voltage
•
Guaranteed from 100 nA to 500
•
hFE
•
High fj ... 250
•
•
(TOP VIEW)
mA
C
B
E
NC
E
B
C
14
13
12
11
10
S
1
LAJ
MHz Min at 20 V, 20 mA
1
"
NC— No 14-PIN
"_3_J"
B
C
mechanical data
"
2
E
4
5
N:
E
"
S
"
7
B
c
internal connection
PLASTIC DUAL-INLINE PACKAGE
O©©®®©® nftnnnnp.
NOTES: a.
The
true-position
between
o©@©®©®
line
pin
centerlinei.
spacing it 0.100 Each pin center-
located within 0.010 of
Is
longitudlnel
Its
true
position relative to pins 4
and 11. b. All
dimensions are
In
inches
unless
otherwise noted.
II
I
"HHt^-mw * mm
m nne »M*
if
JEDEC TO-116 and MO-001AA Dimensions
Falls Within
maximum ratings at 25° C free-air temperature
absolute
(unless otherwise noted)
EACH
TOTAL
TRIODE DEVICE Collector-Base Voltage
gg y 30 V 5v
Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Storage Temperature Range Lead Temperature 1/1 6 Inch from Case for 10 Seconds
NOTES:
1
.
2.
mA
....
0.8
A
0.5
wt
1
.5
wt
-55°Cto 150°C 260°C
mA
This value applies between 0.01 and 500 collector current when the emitter-base diode is open-circuited. Derate linearly to 160°C free-elr temperature et the retes of 4 mw/'c for eech trlode end 1 2 mW/°C for the total device.
Previous editions of this dete sheet showed higher power dissipation ratings which have been found to be errors end do not represent product changes.
TexasINCORPORATED Instruments «»T OFPICI
BOX 1012
•
DALLAS. TBXAS 7S223
In error.
The new
ratings correct these
USES CHIP N24
4-103
TYPE Q2T2222 QUAD N-P-N SILICON TRANSISTOR electrical characteristics at
25° C free-air temperature (unless otherwise noted)
v (BR)CBO
Collector-Ban Breakdown Voltage
V(BR)CEO v (BR)EBO
Collector-Emitter
'ebo
Emitter Cutoff Current
Static
hFE
Base-Emitter Voltage l
l
Collector-Emitter Saturation Voltage
VcE(sat)
l
Small-Signal
II
Common-Emitter
Forward Current Transfer Ratio
fr
Transition Frequency
cobo c ibo
Common-Base Open-Circuit Output Capacitance
ic-o IC -
1
mA
MA
10
nA
50
mA mA IC- 150 mA Iq- 160 mA IC " 500 mA C - 150 mA IC - 500 mA
100
IC- 150
B - 15 mA, B - 50 mA,
nA
3
75
IC-10mA See Note 3
300
30
500
IC
10
35
IC-100*iA
50 1.3
V
See Note 3
2.6 0.4
I
See Note 3 1.6
- 10 V,
IC - 20
mA,
f- 100 MHz
V C E-10V, V C B - 10 V, Veb 0-5 V
IC - 20
mA,
See Note 4
Vce-IOV,
IC -
Real Part of Small-Signal
Re(h ie )
T A - 100°C
lE-0,
*=
Common-Base Open-Circuit Input Capacitance
5
l
B - 50 mA,
V CE
K\
30
ic-o E -0
l
VBE
V V V
60 See Note 3
ib-o.
V C B - 50 V, Vcb-SOV, V EB -3V, V C £ - 10 V, VCE-10V, VCE-10V, V C E-10V, Vce-IOV, V C E - 1 V, B -15mA,
Forward Current Transfer Ratio
E -0
l
IC- 10 mA, lg- 10>A,
Emitter-Base Breakdown Voltage Collector Cutoff Current
c -10mA,
I
Breakdown Voltage
'CBO
MIN MAX UNIT
TEST CONDITIONS
PARAMETER
lE-0, ic-o, 20 mA,
2.5
-
1
f
-
1
f
- 300
MHz
250
MHz MHz
f
V
MHz
8
pF
25
pF
60
ft
Common-Emitter Input Impedance 2%. These parameters must be measured using pulse techniques. tw - 300 Ms, duty cycle < per octave from To obtain fT the |h fJ response with frequency Is extrapolated at the rate of -6 dB
3.
4.
100 MHz to the
f
,
frequency at which
|hf e |- 1.
switching characteristics at 25°C free-air temperature
PARAMETER to-
Rise
* Voltage
V C C-30V,
Delay Time
V BE
Time
t8
Storage
tf
Fall
(
ff)
I
Time
l
See Figure
- -0.5 V,
slightly
190
30
See Figure 2
B(2)" -15rnA -
and current values shown are nominal; exact values very
12
1
IC- 150mA, lB(i)-15mA,
V CC -30V,
Time
UNIT
TYP
TEST CONDITIONS* C - 150mA, led)- 15mA,
with transistor parameters.
PARAMETER MEASUREMENT INFORMATION »I6.2V---13.8V
1
_J
L.
kfl
INPUT 0—"»W-
OUTPUT
>-3V» TEST CIRCUIT
VOLTAGE WAVEFORMS
FIGURE 2-STORAGE AND FALL TIMES
FIGURE 1-DELAY AND RISE TIMES NOTES:
a.
b.
The Input waveforms have the following tf < 6 ns, t w « 1 00 MS, duty cycle < 1 7%. All
waveforms
are
VOLTAGE WAVEFORMS
TEST CIRCUIT
characteristics: for figure 1, t,
<
2 ns.
monitored on an oscilloscope with the following characteristics:
t»»
tr
<
< 200 6
ns,
ns,
duty cycle
R ln > 100
kft,
<
2%; for figure
2,
C ln < 12 pF. PRINTED IN U.S.A.
3'
connot otsume ony responsibility fw ony circuits shown or represent that they ore free from potent infringement.
Tl
4-104
Instruments Texas INCORPORATED POeT OFFICE BOX 5012
•
OAU-Ae. TSXAa 7S222
TIME TEXAS INSTRUMENTS RESERVES THE RICH! 10 MAKE CHANCES AT ANY POSSIBLE. IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT
TYPES 2N2060, 2N2223. 2N2223A DUAL N-P-N SILICON TRANSISTORS BULLETIN NO. OL-S 7211678, MARCH 1972
TWO TRANSISTORS IN ONE PACKAGE FOR DIFFERENTIAL AMPLIFIER APPLICATIONS •
Medium Power
•
High Operating Voltage
'mechanical data
ALL LEADS INSULATED FROM CASE Dimensions without tolerenee designete true petition. Leeds having maximum dlamatar (0.019") meesured In gaging plana 0.064" +0.001" -0.000" balow tha Mating plana of tha davlca •hall ba within 0.007" of thalr trua poiltlon ralatlva to a maximum width tab.
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
T Applicable to
'absolute
2N2223 and 2N2223A
maximum
2
COLLECTOR
minimum dlmantlon
only. Raglitarad
1
1
for
2
2N2060
It
0.140.
ratings at 25° C free-air temperature (unless otherwise noted)
2N2223 2N2223A
2N2060
EACH
TOTAL
EACH
TOTAL
UNIT
TRIODE DEVICE TRIODE DEVICE Collector-Base Voltage
100
100
V
Collector-Emitter Voltage (See Note 1)
80
80
Collector-Emitter Voltage (See Note 2)
60
60
V V V
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 3) Continuous Device Dissipation at (or below) 25" C Case Temperature (See Notes 4 and 5) Continuous Device Dissipation at 100" C Case Temperature Operating Collector Junction Temperature
3. 4. 6.
mA
0.5
0.6
0.5
0.6
1.5
3
1.6
3
0.86
1.7
0.91
1.7
W W W U
200
C
-65°C to 200"C 300"C
Lead Temperature 1/16 Inch from Case for 10 Seconds
1.
7
500
200
Storage Temperature Range
2.
7
500
That* values apply whan tha bate-emltter resistance (RnE> It equal to or last than 10 ohm t. These valuet apply whan tha bete-emltter dloda It opan-clreultad. Derate linearly to 200° C free-air temperature at the rata of 2.86 mw7°C for each trlode and 3.43 mW7°C for total davlca. Derate 2N2060 llneerly to 200°C case temperature et the rata of 8.6 mW/°C for each trloda and 17.2 mW/°C for total device. Derate 2N2223 and 2N2223A llneerly to 200°C ease temperature at tha rata of 9.1 mW/°C for each trloda and 17.2 mW/'c for total davlca.
6. 7.
8. 9.
Tha terminals of tha trlode not under tett are open-circuited for the measurement of these characteristic!. This parameter must be measured uting pulte techniques tyy - 300 lit, duty cycle < 1 96. The lowar of the two h FE reeding Is taken es h FE1 This parameter la measured In en amplifier with response down 3 dB at 25 Hi and 10 kHz and a high-frequency .
rolloff of
6
dB/octave.
JEOEC
registered data. Thlt data sheet contains
all
applicable raglitarad data In effect at tha time of publication.
Texas INCORPORATED Instruments POST OFPICI BOX B012
•
DALLAS, TEXAS 7S222
USES CHIP N23
4-105
TYPES 2N2060. 2N2223, 2N2223A DUAL N-P-N SILICON TRANSISTORS •electrical characteristics at
25°C
free-air
temperature (unless otherwise noted)
individual triode characteristics (see note 6)
Collector-Base
V(BR)CBO V(BR)CEO V(BR)CER V(BR)EBO
MIN IC =
Breakdown Voltage Breakdown Voltage
Collector-Emitter Breakdown Voltage
l
Emitter-Base Breakdown Voltage
i
Base-Emitter Voltage
vbe
Small-Signal
hjb
V CE -5V.
VCE °5 V, V CE » 5 V, B -SmA, B -SmA,
c
100
60
60
-
lc*
See Note 7
l
nA
15
MA
10
nA
15
30
90
25
150
40
120
50
150
50
200 0.9
0.9
lc=50mA lc=B0mA
1.2
1.2
Common-Base
10
75
25
mA
1
lc=10mA,
l
Collector-Emitter Saturation Voltage
VCE(sat)
100
80
Ic'IOfA Ic'IOOmA
VCE-SV, Static Forward Current Transfer Ratio
hFE
7~
l
V E B-SV,
Emitter Cutoff Current
lEBO
- 30
MAX
2N2223 2N2223A UNIT MIN MAX
l
Collector Cutoff Current
ICBO
100M, Je-O
See Note mA, B = 0, c SeeNoteT c - 100 mA, Rbe'^O"= 100cA, lc°0 E V CB -80V. lE-0 T A =150°C V CB -80V. l£-0. l
Collector-Emitter
2N2O60
TEST CONDITIONS
PARAMETER
20
30
20
30
Input Impedance Small-Signal
hrb
Common-Base
VcB
Reverse Voltage Transfer Ratio Small-Signal
h b
lc=1mA,
5V,
=
=
f
3x
1kHz
10-*
Common-Base
0.5
Output Admittance Small-Signal Common-Emitter
Mmho
1000 4000
Input Impedance Small-Signal hfe
Common-Emitter
Vce =
Forward Current Transfer Ratio Small-Signal Common-Emitter
Forward Current Transfer Ratio
I
Common-Base Open-Circuit
cobo
v
'C
>
=
1
mA
-
'
"
50
kHz
1
150
40
200
pmho
Output Admittance Small-Signal Common-Emitter
he
5
c -50mA,
MHz
2.5
f
- 20
'E-0.
f
-
1
MHz
15
V E b-0.5V, C = 0,
f
=
1
MHz
85
V C £=10V,
l
VcB=' v
.
Output Capacitance
Common-Base Open-Circuit Cibo
l
85
Input Capacitance
triode matching characteristics
TEST CONDITIONS
PARAMETER Static
hFE2
Gain Balance Ratio
~ v BE2l
|VBE1
I
Base-Emitter-Voltage-Differential
V CE
Temperature Gradient
From T A -
operating characteristics at 25° C
free-air
C = 100(>A, See Note 8
0.9
S" Note 8
0.9
lc *
-
Base-Emitter-Voltage Differential
A(V B E1 - VBE2I
AT A
Vce-SV, V CE" 5V VcE"5V, VCE'BV,
Forward Current
"FE1
EJEMZZSimVEISil^^m
1
i"*.
15
Ic=100mA Ic-'ihA" c -100uA, -55°CtoT A - 126°C
" 5 V,
UNIT
0.9
l
10
25
MV/°C
temperature
individual triode characteristics (see note 6)
TEST CONDITIONS
PARAMETER
•JEDEC
Spot Noise Figure
V CE
Average Noise Figure
Vpf
- 10 V. lc - 300 MA, - 10 V, lc * 300 cA,
Rg - 510 n. f - 1 kHz Rg ' 1 Mi. Noi8e Bandwidth -
15.7 kHz. See Note 9
registered data
PRIMED
4-106
Instruments Texas INCORPORATED POST OFFICE SOX 5012
DALLAS. TEXAS 76222
IN U.S.*.
AT AHY TIM TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHAN6ES THE BEST PHOOOCT MKSIIU IN ORDER TO IMPROVE DESIGN ANO TO SUPPLY
|
TYPES 2M2192. 2N2132A, 2N2183, 2N21S3A, 2N2194. 2N2194A, 2N2243, 2N2243A N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 733671. MARCH 1963-REVISED MARCH 1973
FOR MEDIUM-POWER SWITCHING
AND AMPLIFIER APPLICATIONS •
High Breakdown Voltage Combined with Very Low Saturation Voltage
•
hpE-Guaranteed from 100 /ia to
1
amp
mechanical data
THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
»unuss omomnsE
O.rflmmti
\m
J—
OF OUTLINE IN —L-a mw I
npThneaa.*
r
ALL JEOEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
maximum
absolute
ratings at 25° C free-air temperature (unless otherwise noted)
2N2192 2N2193 2N2194 2N2243 2N2192A 2N2193A 2N2194A 2N2243A UNIT Collector-Base Voltage
60* 40*
80* 50*
60* 40*
5*
8*
1*
1*
0.8*
Total Device Dissipation at (or below)
25° C Case Temperature (See Note 3) Storage Temperature Range
Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage Collector Current
Total Device Dissipation at (or below)
25°C Free-Air Temperature (See Note
V
5*
120* 80* 7*
1*
1*
a
0.8*
0.8*
0.8*
w
iot
10t
10t
10t
2.8*
2.8*
2.8*
2.8*
2)
-65°C
1
.
2. 3.
•JEDEC
outline for these devices
is
(JEDEC
registered)
TO-5. TO-39
falls within TO-5 with the exception of lead length. applicable registered data in effect et the time of publication. guaranteed by Texas Instruments In addition to the JEDEC registered value which is also shown. is
registered data. This data sheet contains
'This value
w
to
This value applies when the base-emitter diode Is open-circuited. Derate linearly to 200°C free-air temperature at the rate of 4.57 mw/°C. Derate the 10-watt rating linearly to 200°C case temperature at the rate of 57.1 mw/°C. Derate the 2.8 watt rating linearly to 200°C case temperature at the rate of 16 mw/°C.
The JEDEC registered
V
200°C* 300°C*
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
V
all
USES CHIP N23
TexasINCORPORATED Instruments POST OFFICE BOX S012
•
DALLAS, TEXAS 7S222
4-107
:
TYPES 2N2243, 2N2243A N-P-N SILICON TRANSISTORS
Electrical characteristics at
M°C
free-air temperature (unless otherwise noted)
2N2243A
2N2243
CONDITIONS
TEST
PARAMETER
= 100/xo, c = 25 mo, E = 100pa, ¥ C i = *0v, V« = 60v. Vb = 5», Vc6 = 10», V a = l0», Vce = 10 ».
Breakdown Voltage
c
|
= See Mote 4 = 0, = c U= TA = 150'C = 0. Ic = c = 100fia
U
V,imcbo
Collector-Base
Vikiceo
Collector-Emitter Breokdown Voltoge
l
li
V(»«bo
Emitter-Bose Breokdown Voltage
l
l
Iceo
Collector Cutoff Current
Emitter Cutoff Current
Inc-
Static
ite
Forward Current Transfer Ratio
V CE
=10v,
I,
Collector-Emitter Saturation Voltage
M
Small-Signal Common-Emitter
=
10v,
10
10
15
15
50 15
15
lc
= 150ma = 150ma
lc
=
50ma,
1
= 20 mc
f
=
20
120
40
VC i=10v,
Output Capacitance
* switching
characteristics at
M°C
free-air
l
E
= 0.
120
15
15
U
U
0.J5
0.25
2.5
2.5
15
lmc
2N2243 2N2243A
See Figure
Stored-Charge Time Constant
»b
4-.
•Mcatn
Il»»
rmmlm
JEDEC »0
V V
120 See Note 5
80
V
7
10
TA
- 100°C
ic-o ic- 100 uA
1
«A
50
nA
15
IC= 150
mA mA
40
IC- 500mA
15
lc= 150 mA " 150 mA, See Note 5 lc= 150 mA, See Note 5
30
lc= 10
nA
30 120
Ic
1.3
V
0.25
V
15
pF
Common-Emitter
V CE
Forward Current Transfer Ratio
= 10 V,
IC =
50mA,
f- 20 MHz
0,
f
2.5
Common-Base Open-Circuit
c obo 5:
Collector-Bate
>CBO
"FE
NOTE
TEST CONDITIONS
v (BR)CBO v (BR)CEO
Vcb-IOV,
Output Capacitance
These parameters must be measured using pulse techniques. t„ - 300
u«,
Ig
duty cycle
-
-
1
MHz
D
< 2%.
switching characteristics at 25° C free-air temperature
PARAMETER
TEST CONDITIONS
Stored-Charge Time Constant
*b
See Figure
MAX UNIT
MIN
1
2.1
I
jEJ
PARAMETER MEASUREMENT INFORMATION +10 v
Pulse© | Pulse
O
+10 V
O
OUTPUT
(2)
-•II— 0.2 ms -8 ms See Note a
INPUT PULSES AT POINT A
-»-
J
son
INPUT PULSE
M~
j
-j
©
INPUT PULSE Q)
OUTPUT PULSE
TEST CIRCUIT NOTES:
a.
b.
VOLTAGE WAVEFORMS
Weveforms are monitored on an oscilloscope with the following The relay l> Clare HG 1006 (or equlvelent).
characteristics: t r
<
14
ns,
R in - 10 Mil Ci„ -
1 1
5 oF
'
FIGURE 1-STORED-CHARGE TIME CONSTANT- rb
873
PRINTED IN
USA
Tl
cannsl assume any responsibility
or
represent
that
they
are
free
lor
from
any
patent
circuits
shown
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MIKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
Texas INCORPORATED Instruments POBT OFFICE BOX S012
.
DALLAS, TEXAS 71222
4-111
TYPE 2N2270 N-P-N SILICON TRANSISTOR BULLETIN NO. OL-S 7311947, MARCH 1973
FOR MEDIUM-POWER, GENERAL PURPOSE APPLICATIONS •mechanical data
THE COLLECTOR
18 IN
ELECTRICAL CONTACT WITH THE CASE
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE
maximum
absolute
ratings at 25° C case temperature (unless otherwise noted)
60V * 45V 60V # i 7 v # 1 A < W* 1
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1) Collector-Emitter Voltage (see Note 2)
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature
(see
Note 3)
fiowf Continuous
Device Dissipation at (or
below) 25°C Case Temperature (see Note 4)
1 -65°C
Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds •electrical characteristics at
25°C case temperature
Collector-Emitter
Breakdown Voltage
V(BR)CER V(BR)EBO
Collector-Emitter
Breakdown Voltage
TEST CONDITIONS See Note 5 c = 100 mA, ib-o. \q - 100 mA, r be - 10 n. See Note 5 E = 0.1 mA, ic-o V CB = 60V. E -0 T C =150°C V CB - 60 V, lE-0, l
Emitter-Base Breakdown Voltage
l
Collector Cutoff Current
>EBO
Emitter Cutoff Current
hFE
Static
Vbe v CE(sat)
Base-Emitter Voltage
B " 15 mA, lg » 15 mA, l
Collector-Emitter Saturation Voltage
Common-Emitter
V CE
Forward Current Transfer Ratio Small-Signal
Ihfel
ic =
- 6 V,
V CE = 10V, V C E-10V,
Forward Current Transfer Ratio
Small-Signal hfe
V EB
Common-Emitter
=
Vce*
Forward Current Transfer Ratio
10V.
UNIT V
60
V
7
50
10
v
.
c -= 1 mA c = 150 mA, See Note 5 IC- 150 mA, See Note 5 IC- 150 mA, See Note 5
l
30
l
50
mA,
IC= 50 mA, lc " 50
mA,
kHz
f
-
1
f
=
20
MHz
5
100
Transition Frequency
Vce-'OV.
c obo
Common-Base Open-Circuit Output Capacitance
V(5 B
=10V,
lE-0,
f
»
1
c ibo
Common-Base Open-Circuit Input Capacitance
V EB
= 0.5V,
ic = o.
f
-
1
MHz MHz
6. 6.
1.2
V
0.9
V
275
MHz 15
pF
80
pF
.
,
which
|hf e
|-
1.
registered value. This dete sheet contains
all
tThese values are guaranteed by Texas Instruments
4-112
200
when the base-emitter diode is open-circuited. when the base-emitter resistance R BE < 10 O. 20O C free-air temperature «t the rate of 5.71 mwrc. ,.„_„ . ,, mW/°C. Derate the 5-wett (JEDEC registered) Derate the 10-watt rating llneerly to 200°C case temperature et the r.te of 67.1 mW/°C of 2S.B rate the temperature at rating llneerly to 200°C case These perameters must be measured using pulse techniques. t„, - 300 Ms, duty cycle < 2%. octave from f - 20 MHz to the frequency To obtein f T the fa.| response with frequency Is extrepoleted at the rate of -6 dB per et
•JEDEC
V nA "A nA
This value applies
2. This value applies 3. Derete linearly to 4.
50
See Note 6
fT
1
50
100
°
lc = 5
MAX
45
MIN
l
ICBO
W*
(unless otherwise noted)
PARAMETER v (BRICEO
5
200 C* /300°Ct 1255°C*
to
applicable registered date In effect et the time of publication. JEDEC registered velues which are elso shown.
In edditlon to the
Instruments Texas INCORPORATED POST OFFICE BOX Mia
•
DALLAS, TEXAS 7S222
USES CHIP N23
TYPE 2N2270 N-P-N SILICON TRANSISTOR •thermal characteristics
PARAMETER
MAX UNIT
Junctlon-to-Can Thermal Resistance
RgJC R SJA
35
Junction-to-Free-Air Thtrmal Resistance
"c/w
17B
•operating characteristics at 25° C case temperature
PARAMETER F
TEST CONDITIONS c - 0.3 mA, R G
VcE
Spot Noise Figure
f
-
1
'0 V,
l
MIN -
1
MAX
UNIT
kn, 10
kHz
dB
•switching characteristics at 25° C case temperature
PARAMETER tj
Total Switching
TEST CONDITIONS
Time
See Figure
MIN
MAX UNIT
1
30
ns
PARAMETER MEASUREMENT INFORMATION -50 V
O
'
+20 V
40n -O OUTPUT
nF DISC
0.01
INPUT O
f
((—
Jioon
sioon i
kn
5W
—VW
•
_L
O -50 V
1N3064
WAVEFORM AT POINT A
+20 V --
OUTPUT
WAVEFORM + 18
V 'off-
'
'on + 'off
FIGURE 1 -SWITCHING TIME MEASUREMENT CIRCUIT
NOTES:
The Input waveform w = 15 ns, Z out = 50
7.
t
8.
'JEDEC
3
Waveforms
are
is supplied by a mercury relay pulse generator with the following characteristics: t
2
2
na
10
na
10
120
40
l
= -55°C
Ta
/ia.
ju,a
l
See Note 4
l
See Note 4
l
See Note 4
= 5», E
100
10
20
60
150
1.0
0.6
600 0.6
1.0
32
= —1 ma. f
=
Ike
f
=
1
f
=
30Mc
f
=
1
1.0
V
1.0
V
32
n
25
6xl0-
6x10-"
Common-Boss
na
300
350
25
Common-Base
y
10
l,
l
Small-Signal
=
V
5
Ie
1A
UNIT
MAX
45
5
l
l
2N2388
MAX MIN
45
See Note 4
i.
Reverse Voltage Transfer Ratio
hob
1
1
4
jumho
Output Admittance Small-Signal Common-Emitter
hf.
Forward Current Transfer Ratio
w
Small-Signal Common-Emitter
Forward Current Transfer Ratio
V«
=
5v,
V«
=
5v,
l
Vcb
=
5v,
u
Common-Base Open-Circuit
U,
Output Capacitance
* operating
characteristics at
NF
4.
These paramatffi
JEDEC
mwt
=
1
c
=
500
ma.
^.a
= o.
60
kc
350
1
600
150
1
Mc
8
8
TEST CONDITIONS Vc»
Average Noise Figure
• Indicates
lc
Pr
25°C free-air temperature
PARAMETER
NOTE:
= o, c = = Vk = v« = o. = lc = c = 10 ^a lc = 10 c = 500 c = 10 ma. c = 10 ma. c = 10 ma.
MIN
=5
v,
l
E
= -10/iO,
Us
=
10
kfi
2N2387
2N23S8
MAX
MAX
4
3
UNIT
db
Noise Bandwidth 10 cps to 15.7 kc
be mMfurad using pwl» techniques.
rW
=
300
/isec.
Duty Cycle
<
2%.
registered data.
PRINTED IN USA.
4-118
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANV TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE IEST PRODUCT POSSIBLE.
TYPES 2N2389. 2N2390 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 646027, OCTOBER 1964
FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS
FROM 150 ma, dc
to
to 30
Mc
formerly TI424 and TI425
• •
2N1613 and 2N1711
Electrically Similar to
Compatible Package for Interfacing with Integrated Circuits and Thm-Film Modules
mechanical data The
transistors
are
in
a hermetically sealed welded package meeting the JEDEC TO-50
ALL LEADS INSULATED
CASE OUTLINE
maximum
'absolute
FtOM USE
25°C
ratings at
free-air
temperature (unless otherwise noted) 75 v 50 v
Collector-Base Voltage Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage Collector Current Continuous Device Dissipation at (or below)
7v
25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) Operating Collector Junction Temperature Storage Temperature Range Lead Temperature X» Inch from Case For 10 Seconds "electrical characteristics at
25*C
free-air
Vtltc*>
'iSMCIO v(Mcet (MlKtw-Einlmr Dnatdtm
'iMISO
Eailttar-tan
Valtaft
liaaMoim Vrilaft
c= c=
= H =l0O, ShIMi4 =100 W C = »«=«'. = A= »C1=»». = c=« »M = »cs = »'. c = IM Vci = c = ho i* Sm KMf va = c= »a = "«. c = 10ma, A = -5S*C, SMlMt4 SmNoIi4 »« = c= SMlMt4 ct = c= l,= c = 1»hm, l,= c = l»on, SmIWi4 l
l
l
100/io,
l
B
>ESO
MtKtor
Cataff Carnal
«
l
e
Comal
St
Fonwa' Comal
»
* "ctjufl NOTES.
1. Tali
2.
llooorlr to
Votta*
Colloctor-EoilHtr Satoratlta Voltaoi
¥•!• otplln w»«i Mm b
Dmto
*Mlcat« JEDEC
on-Emlmr
200*C
m
frtc-«ir
omltUt
mktoKO
Iwowaloro
at
t
tttt
K
<
10
10.,
r
io».
l
to
w
+200°C 230°C
*
7
V
T
na
75
35
20
Sot Holt 4
200*C
u»
300
100
40 1.3
o.<
1.5
Dtnto llnMrir
4.
ThtH oaranwton must bo mtanrai *%• *>>1 tf*
^
120
0.4
3.
to
15
20
40
raolittnd oolo.
5
IS
500im,
mw/C*.
A"
M
4
1S0cm,
l
aa
10
n
l
I
10
10 10
I
15«a,
T
10
10
10 on,
UNIT
7
10,,
IS an,
2N2390 MIN MAX 50
'•».
Q.
rata of 2.57
-65°C
SO
1S0*C
T
0,
l
Tnarfor Ratio
1.5
200°C
75
J«.
l
Static
.
75
6
l,
Enllttr CataH
»
100 mo, «
l
'cso
2N2389 MIN MAX
TEST CONDITIONS
InaMm
.
.
.
500 ma 450 mw
temperature (unless otherwise noted)
PARAMETER MltctacloM
outline.
tooiaaratora «t usiitg
Hw rah
of 0.57
pulsi Uchoiaoti.
1.3
V
1.5
V
«w/C*.
rW
=
300 jute,
373
Instruments TexasINCORPORATED POST OFFICE BOX 5012
DALLAS, TEXAS 75832
4-119
'
TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS * electrical
characteristics at
2S"C free-air temperature
Small-Signal
•i.
»*
VC ,
Co*Mon-tou
iMBMbHU*
Input
Snall-Slgnal
Imm VoHaao Tranche Holla
K\
Comal
1,
»«.
1|
FM,
I BW,
l
(
mi,
ma.
1 RH,
|
f
l
Tranrior Rail*
Vc,
10».
tt
Forward Carroat Tranrfor Ratio Opon-Circuit
l,
Outsat Capacitance
V el
InOOt C090CitanC0
0.5,,
=
1
ITM,
1
M
kt
f=t«l 1=1 kc
i
34
J«
1
4
4
illo"4
= = 1=1 = = MHc
UNIT
M •
SulO- 4 SilO-4
1 > io- 4
1
ki
kc
(.1
0.5
0.1
0.5
pffbt
1
kc
0.1
1.0
0.1
1.0
junto
k<
N
100
SO
too
IS
ISO
70
NO
1
1
1
kc
I.S
1.0
l
0.
2N2390 MIN MAX
f=I
1
l
l
CotiMCM-lai* Opon-Clrcvlt
t.b.
K
»«.
|
Small-Signal Commaa-Emlttor
CMMMi-latt v »(«Iceo
BrMMowl
lc ,
CoHedor-EniHrar
Currant Emitter Cutoff Currant
.
Static
Forward
Current Transfer Ratio
VK
Base-Emitter Voltage
v
Collector-Emitter
'"Ml i. 1
Common-Base Open-
^*K>
MTE
4.
c
=
I,
=
l
Orcoif Output Capacitance
2N2396 2N2395 MIN MAX MIN MAX
CONDITIONS
0,
TA
=
150°C
v,
l
l
VC6
=
10v,
l
c
=
VC i
=
10v,
U
=
=
Than paramtin mint l» iMawrad King pgl» iKknlqwi. PW
20ma, 0,
20
See Note 4
TA
=-55°C,
See Note 4
See Note 4
10
na
10
10
M°
1
P-o
See Note 4
f
=
20Mc
f
=
1
300 /ok. Duly Cyclt
<
60
40
1.3
0.6
1
1.3
V
1
y
30
Pf
2.5
2
30
Mc
120
20
10 0.6
V
10
1
l
UNIT V
40
40
See Note 4
E
lE
i
60
60
= = 0, c = lc = 150 ma. c = 150ma, lc = 150 ma. c = 150ma.
Vci
1.
Currant Transfer Ratio
.
E
l
Saturation Voltage Small-Signal Forward
1
h|
tin,
= 100ma, = 30v, Vci = 30v, V 6 = 5v, Vet = 10 Vct = 10v, U = 15 ma, = 15ma, l
BreoMowll voltao*
Uto
K
10
voito,.
lc,
°
=
Collector-Base
CollKtor Cutoff
,
TEST
2%.
THERMAL CHARACTERISTICS DISSIPATION DERATING CURVE
SO TA
Indium
100
150
200
— Free-air Temperature — *C
250
JEIEC nglstind Ea°
Breakdown Voltage
Icto
Collector Cutoff Current
l
Emitter Cutoff Current
EK>
Statk Forward Current
"»
Transfer Ratio
VK
Base-Emitter Voltage
»cn»t|
1,
Saturation Voltage
=
60
V
60
60
V
6
6
V
Ie l
l
=
TA
150'C
1
Small-Signal Common-Emitter
Vce
=
hr*
-55°C
500
100
10
20
75
175
100
200
175
250
800
500
See Note 4
0.7
0.5
mA
07
V
0.35
V
0.5
0.35
1.5
13
3.5
24
SO
450
150
900
kfl
5 V,
lc
=
1
mA, 8x10*
SxltV*
Reverse Voltage Transfer Ratio Small-Signal Common-Emitter
h °*
hf,
nA
Forward Current Transfer Ratio Small-Signal Common-Emitter
!
10
nA
Input Impedance
h*
,.
10
120
40
=
TA
Small-Signal Common-Emitter "'•
10
10
30
1
=
10
10
l
100 fik, lc
2N24S4 UNIT MIN MAX
60
c
l
E
Collector-Emitter
See Note 4
0,
= =o E = 0, lc = lc = l/*A lc = 10 fik c = 10 fik, c = 100 juA lc = 500 v* mA lc = lc = 10 mA, lc = 100 fik
= 10 iiA, Vc. = 45 V, Vc. = 45 V, Vei = 5 V, Vce = 5 V, Vch = 5 V, Vce = 5 V, Vce = 5 V, Vce = 5V, V« = 5 V, Vce = 5 V, Va = 5 V, l
2N2483 MAX MIN
CONDITIONS
TEST
=
f
1
kHz
40
30
fimho
Output Admittance |
f
Small-Signal Common-Emitter
Vce
Forward Current Transfer Ratio
Vce
= =
Vci
Vei
.
Common-Base Open-Circuit
t°b°
Output Capacitance
Common-Base C|bo
Open-Circuit
Input Capacitance
5 V,
lc
5 V,
lc
=
3 V,
Ie
=
0.5 V,
lc
= =
= =
f
= =
30 MHz
f
=
140 kHz
6
6
PF
f
=
140 kHz
6
6
p*
50 fik,
f
500 fik, 0,
0,
5 MHz
2.4
3
2
2
'operating characteristics at 25°C free-air temperature
PARAMETER VC i Average Noise Figure
jjf
=
5 V,
f
=
Vce Spot Noise Figure
f
=
=
1
NOTES)
4.
Thm
5.
Aviragi
paramaUn mwt bt Noise.
FTgura
ff
winf In
m
=
5 V,
lc
=
lc
=
Re
=
lc
=
10 fik,
10/tA,
None Bandwidth
10 kHz,
puis* hchnlquit. t
p
—
mtmu
300
2N2483
2N24S4
MAX
MAX
/ti,
Re
=
4
3
dB
15
10
dB
4
3
dB
3
2
dB
10 Ml,
=
200 Hz
R»
=
=
2 kHz
duty cycle
^
UNIT
10 kfl,
See Note 5
=
Noise Bandwidth
kHz,
ampllflu with
10 /Ik,
15.7 kHz,
=
Vce=5V, f
=
10 kft, 10 fik, Re Noise Bandwidth 20 Hz
5 V,
100 Hz,
=
=
lc
Noise Bandwidth
Vce
NF
CONDITIONS
TEST
10kft,
1%.
down t it «t 10 Hi aid Id Mil
mi
•
Mt*-frtqii«it|»
rrtWf it 4
il/xtm.
•IndkctH JEDEC njlllirMl doto
PRINTED IN U.S.A.
4-130
Instruments TexasINCORPORATED POST OFFICE BOX 5012
DALLAS. TKXAS 7B2S2
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUTKT THE REST moDUCT POSSIBLE.
TYPES 2N2497 THRU 2N2S00 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BULLETIN NO. DL-S 683519, MAY 1963-REVISED MAY 1968
FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS • Guaranteed 10 cps Noise Figure (2N2500)
• High Input Impedance (>5
megohms
at
kc)
1
'mechanical data —
0.100—
THE GATE
w
ELECTRICAL
IS IK
CONTACT WITH THE CASE
DIMENSIONS
All JEDEC TO- 5
AND NOTES ARE APPLICABLE
^f
1- SOURCE
•~0.009-0.I25
3
2
-GATE
-DRAIN
AU
OINKNSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
maximum
ratings at 25°C free-air temperature (unless otherwise noted) Continuous Forward Gate Current Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 1) Total Device Dissipation at (or below) 25°C Case Temperature (See Note 2) -195°C to Storage Temperature Range
'absolute
2N2497 TEST CONDITIONS
PARAMETER Drain-Gale Breakdown
'ess 'ess 'oss 'dIoHI
'DS
0.5 1.5
+
w w
200"C
characteristics at 25°C free-air temperature (unless otherwise noted)
'electrical
V(R»|DSO
-10 ma
= -10 ju. = v ss = v DS = -io«. »DS = -'S«. = — 100 /«, l
Voltage (See Nolo 3)
Gate Cutoff Current
Gate Cutoff Current Zero-Gate-Voltage Drain Current Pinch-Off Drain Current Static Drain-Source Resistance
D
v ss
10 ,.
10 ,.
'[,
= =° »OS = « A = ISO'C »es = l
s
V
MAX
— 20
-20
MIN
MAX
-20
0.01
DS
2N2500
2N2499
2N2498
MAX MIN
MIN
UNIT
MAX
-20 0.01
0.01
10
MIN
10
10
V
0.01
jua
10
/"
T
»
-3
-1
V 6S See Nolo 4 :
*SS
=°
-2
-o
—5
— 10
— 10
-IS -10
1000
BOO
BOO
0.2
B.2
0.2
-1
—4
ma
-10
M" ohm
Small-Signal Common-Source l»i.l
w
0.2
/imfca
2200
jumho
Input Admittance
Small-Signal Common-Source
Forward Transfer Admittance Small-Signal Common-Source
IrJ
= -">'
v DS f
=
1000 l
D
2000
3000
1500
2000
4000
1000
See Note S
:
kc
1
0.1
0.1
0.1
0.1
jLunhe
20
40
100
20
jumho
Reverse Transfer Admittance
U
Small-Signal Common-Source
W
Smalt-Signal Common-Source
Output Admittance
Forward Transfer Admittance
Common-Source ti..
Short-circuit
Input Capacitance
V DS f
=
»6S f
=-10,, 10
=
=
1
D
:
See
HaleS
°.
*DS
= - 10 V
no
1800
1350
900
mc
jumho
32
32
32
32
P«
3
3
4
1
dk
5
db
140 kc
"operating characteristics at 25°C free-air temperature V os f
NF
Spot Noise Figure
V DS f
NOTES:
=
=—
5 »,
kc,
1
= -S».
= 10
cps,
= — ma = IW I„ = -1 ma
l
1
D
R
s
s\
e
1
=
10 MSI
Derate linearly to 175 C free-air temperature at the rate of 3.3 mw/°C. 2. Derate linearly to 175°C case temperature at the 1.
10 mw/°C. 3. This parameter corresponds closely to V( BR )d SS for Drain-Source Breakdown Voltage (the Vqs = °'- V (BR)DSV * tne Drain-Source Breakdown Voltage for other values of Vqq) may be calculated from: rate of
|
= =
NOTE
* V ss
NOTE
S;
'Indicates
l
JEDEC
2N2497
2N2498
2N2499
5 v
< i
B >
— 2 ma
— 5 ma
— registered
1
ma
2N2500
—
1
ma
data.
OSES CHIP JP71
V (BR)PSVI ~ |V
I
J
oin MA _L_
MS.
-. "»
DIMENSIONS
maximum
'absolute
20
o.too—
_
-L
0.100
1
80 nsec max
at
JEDEC TO-S packages. JEDEC TO- 18 packages.
in
-j
-r—
I
...
250 Mc min
•
data
Device types Device types
a
Time
•
.
^-1 EMITTEI
ME
III
INCHES UNLESS OTHEIWISE SPECIFIED
TO-18
ratings at 25°C free-air temperature (unless otherwise noted)
2N2537 2N2538
2N2539 2N2540
60 v 40 v 30 v 5v
60 v 40 v 30 v 5v 0.8 a
Collector-Base Voltage Collector-Emitter Voltage (See
Note
1)
Collector-Emitter Voltage (See
Note
2)
Emitter-Base Voltage
0.8 a
Collector Current
25°C Free-Air Temperature (See Notes 3 and below) 25°C Case Temperature (See Notes 5 and 6)
Total Device Dissipation at (or below) Total Device Dissipation at (or
wloo
appllos
whoa
thi baio-amlttor rosistanco (Rig)
2. This valuo applies
who*
tho baso^atittor diodo
1. Tblf
is
if
oqual to or
lots
200°C Itn-olc t.rnrmot.r.
4.
Boron 2N2S3» and 2H2540
liaoariy to
2M*C
5.
Dorolo 2N2J37 ood IN2S3I llnooriy 10 IDO'C coso lomporotoro at too rata of 17.2
,'
fUM
MO
1
2
L
l
V reMfl
2N2894
2N3012
MAX
MAX
60
60
nsec
90
75
nsec
UNIT
= 3v,
1
— fi)= 1.5 ma,
B
See Figure
1^2) =
ma,
'-5
1
tVoltage and current values shown are nominal; exact values vary slightly with transistor parameters.
"PARAMETER MEASUREMENT INFORMATION -2V •
on
'off
V,, =
O
+3V
VB ,--4V
+6 V
100O
62 fT
INPUT
-7V — -.1.
-O OUTPUT
INPUT
| I
I
0.1
iiF
O——J—
1(
*
VW 2 k£2
PT
V>/) '
toon
OUTPUT
VOLTAGE WAVEFORMS
TEST CIRCUIT
FIGURE
NOTES:
90%
1
-
following
a.
The input waveforms are supplied by a generator with
b.
Waveforms are monitored en cm oscilloscope with the following
the
TURN-ON AND TURN-OFF TIMES
characteristics:
characteristics:
t
r
<
2^ = 50 0, 1
nsec,
R jn
t
r
^
5s
1
nsec,
PW >"
200 nsec.
100 kO.
'Indicates JEDEC. registered data.
PRINTED IN
4-150
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 7S222
Tl
cannot assume any responsibility
or
represent
that
they
are
free
for
from
any
patent
circuits
U.S.A.
37.
shown
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N2904 THRU 2N2907. 2N2904A THRU 2N2907A P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 731 1916, MARCH 1973
•
DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS High Breakdown Voltage Combined with Very Low Saturation Voltage 500
mA
>
hFE Guaranteed from 100
'
2N2904, 2N2906
for
Complementary Use with 2N2218, 2N2221
>
2N2905, 2N2907
for
Complementary Use with 2N22 1 9, 2N2222
tiA to
•mechanical data Device types 2N2904, Device types 2N2906,
2N2904A, 2N2905, and 2N2905A 2N2906A, 2N2907, and 2N2907A
THE COLLECTM
IS
III
are in are in
JEDEC TO-5 packages. JEDEC TO-18 packages.
ELECTRICAL CONTACT WITH THE
USE
D
0.IOQMIW-
MMI Of OUTUNi IN— IMS
IOM
OPTIOMAt
TO-5
'absolute
maximum
TO-18
DIMENSIONS AIE IN INCHES UNLESS OTHEIWISE SPECIFIED
TO-5
ratings at 25° C free-air temperature (unless otherwise noted)
2N2904 2N2904A 2N2906 2N2906A UNIT 2N2905 2N2905A 2N2907 2N2907A -60 -60 -60 -60 -60 -40 -40 -60
Collector-Base Voltage
Col lector- Emitter Voltage (See Note 1)
-5
-5
-0.6
-0.6
-0.6
-0.6
0.6
0.6
0.4
0.4
W
1.8
1.8
w
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25 Temperature (See Notes 2 and 3)
C
Free-Air
25 C Case
Continuous Device Dissipation at (or below) Temperature (See Notes 4 and 5) Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
1
.
These values apply between
Oarata 3. Derate 4. Derate B. Derate 2.
•JEDEC
T0-1I
2N2904. 2N2906, 2N2904, 2N2906,
2N2904A, 2N2906A, 2N2904A, 2N290SA,
-65
to 200 230
and 100 mA collector currant whan tha base-emitter dioda is opan-circuitad. 2N2905, and 2 N 2905 A linear v to 200°C fraa-alr temperature at the rate of 3.43 mW/°C. 2N2907, and 2N2907A linearly to 200°C free-air temperature at the rate of 2.28 mW/°C. 2N290S, and 2N2905A linearly to 200°C case temperature at the rata of 17.3 mW/°C. 2N2907, and 2N2907A linearly to 200° C cate temperature at the rate of 10.3 mW/°C. I
regiitered data. This data sheet contains
all
applicable registered data in effect at the time of publication.
USES CHIP P20
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 78222
4-151
TYPES 2N2904 THRU 2N2907, 2N2904A THRU 2N2907A P-N-P SILICON TRANSISTORS
•electrical characteristics at
25° C free-air temperature (unless otherwise noted)
2N2906
MIN Collector-Bate
V(BR)CBO
-60
-60
-60
V
IC--10mA, ib-o,
-40
-60
-40
-60
V
-5
-5
E
l
See Note 6
Breakdown Voltage
E --10uA,
l
Breakdown Voltage
ic-o
V C B - -50 V, E -0 VCB--50V, lE-0. T A - 150°C V C E--30V, V BE - 0.5 V V C E " -30 V, V BE - 0.5 V l
Collector Cutoff Current
>CBO
Collector Cutoff Current
>CEV Ibev
Base Cutoff Current
V CE Static
*>FE
Forward Current
Transfer Ratio
UNIT
MAX MIN MAX MIN MAX
-60
Emitter-Bate
V(BR)EBO
MIN
-0
c --10»xA,
l
Breakdown Voltage Collector-Emitter
V(BR)CEO
MAX
2N290BA 2N2907A
2N290B 2N2B07
2N2904A 2N2806A
2N2904
TO-B-»
TEST CONDI DONS TO-16-»
PARAMETER
"
-10 V, IC--100»iA
V CE --10V, IC - -1 mA V C E--10V, IC" —10 mA VCE--10V, IC- -150mA,
-20
-20
-10
nA
-20
-10
-20
-10
MA nA nA
-50
-50
-50
-50
50
50
50
50
20
40
35
75
25
40
50
100
35
40
75
100
40
V
-5
-5 -10
120
40
120
100
300
100
300
See Note 6
VCE--10V, IC" -500mA,
30
40
20
50
See Note 6 l
B
--15mA, IC" -150mA,
-1.3
-1.3
-1.3
-1.3
-2.6
-2.6
-2.6
-2.6
-0.4
-0.4
-0.4
-0.4
-1.6
-1.6
-1.6
-1.6
See Note 6
v BE
Base-Emitter Voltage
v CE(satl
l
B - -50 mA,
l
B
--15mA,
See Note 6 - -150 mA, I
C
See Note 6
Collector-Emitter
Saturation Voltage
V
c - -500 mA,
l
l
B-
-50 mA,
1(3"
V
—500 mA,
See Note 6 Small-Signal
M
Common-Emitter
VCE
" -20 V, Iq m _5o mA,
2
2
2
2
f- 100 MHz
Forward Current Transfer Retio
Common-Base Open-Circuit
Cobo
V C B--10V,
E -0, f- 100 kHz
8
8
8
8
pP
V EB --2V,
ic-o, f- 100 kHz
30
30
30
30
pF
l
Output Capacitance
Common-Base Open-Circuit
Cibo
Input Capacitance
NOTE
6:
•JEDEC
4-152
Thata paramatars must b« mtnurid uting pulM tachnlquai.
w - 300 M», duty eyel* < 2%.
t
r«giit«r«d data
Texas INCORPORATED Instruments *OST OFFICI BOX 1011
•
OALLAt, TIXA9
TIM
TYPES 2N2904 THRU 2N2907, 2N2904A THRU 2N2907A P-N-P SILICON TRANSISTORS "switching characteristics at 25° C free-air temperature
PARAMETER tj
Deley Time
tf
Rise
Fall
t
T Voltage
ff
l
•b(2) "
Turn-Off Time
1
c --150mAi
l
B (1) - -1B mA,
Sea Figure
1
Sea Figure 2
1 ""*,
40 46
lc- -150 mA, led) --13 mA,
Vqc--«V,
Time
UNIT
10
VCC--30V, v BE(off) - 0,
Tlm»
on Turn-On Tim* t, Storage Time t
tf
MAX
TEST CONDITIONS*
80
30 100
end currant valuei shown ara nominal; exact values vary
slightly with transistor parameter!.
•PARAMETER MEASUREMENT INFORMATION -30 V
Q
ov 200
—
n
INPUT -16
V
-O OUTPUT
i
USINPUT O-
V
>5on
(See Notes
TEST CIRCUIT
A
90%
OUTPUT
and B)
VOLTAGE WAVEFORMS FIGURE
1
OV
f
INPUT
-30 V
j
O OUTPUT
I
'
I
90%
OUTPUT
|
10%
(See Notes
TEST CIRCUIT
A
and B)
VOLTAGE WAVEFORMS FIGURE 2
NOTES: •JEDEC
1078
A. Tha Input waveforms ara supplied by a generator with the following characteristics: Z ou , - BO n, ty, • 200 ns, PRR - 160 H>. B. Waveforms are monitored on an oscilloscope with tha following characteristics: t, «S 5 ns, Ri_ - 10 MSI. registered data
PRINTED IN Tl or
<
2 ni
tf
<
2
r
U.S.A.
csnnol silumt any rasponsibtlity for any drcvlri isown rtpriionl Ihot lh«y fin Iran poltnl Infrlnatmont.
m
Texas INCORPORATED Instruments
TEXAS INSIIUMENIS RESERVES THE RIGHT TO MAKE CHANCES AT AN* TIME IN
t.
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT
POSSIBLE.
POST OFPICB BOX SOU
•
DALLAS, T1XAS 7I11S
4-163
TYPES D2T2904, D2T2904A. D2T2905. D2T2905A DUAL P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7311971, MARCH 1973
TWO GENERAL PURPOSE TRANSISTORS IN ONE PACKAGE Each Triode Electrically Similar to 2N2904, 2N2904A 2N2905, 2N2905A Transistors
•
For Complementary Use with D2T2218, D2T2218A, Dual N-P-N Transistors
•
D2T2219
D2T2219A mechanical data
ALL LEADS INSULATED FROM CASE Dimension* without tolerance deslgnete true position. Leeds having maximum dlamatar (0.019") maasurad In gaging plana 0.064" +0.001" -0.000" balow tha Mating plana of tha davico •hall ba within 0.007" of thalr trua potitlon ralatlva to a maximum width
m° '«»
ss°
tab.
I
d-
COLLECTOR
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
absolute
maximum
BASE 1 EMITTER EMITTER BASE 2
1
1
2
COLLECTOR
2
ratings at 25° C free-air temperature (unless otherwise noted)
D2T2904 O2T2904A D2T2905A D2T2905 -60 -60 -60 -40 -5 -5 -600
Collector-Base Voltage
Collector-Emitter Voltage (See Note
1)
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at
(or
below) 25"
Free-Air Temperature (See Note 2)
Continuous Device Dissipation at (or below) 25" Case Temperature (See Note 3 Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds
Total Device
400 600
Each Triode
1
Total Device
2
Each Triode
-65 to 200 300
UNIT
V V V
mA
mW
W °C U
C
mA
collactor currant when tha bate-amitter diode is open-circuitad. and 100 Derate linearly to 200°C free-air temperature at the rates of 2.28 mW/°C for each triode and 3.43 mW/°C for the totel device. 3. Derate linearly to 200° C case temperature at the rates of 5.7 mW/°Cfor each triode and 11.4 mW/°C for the total device. 1.
These vaiuet apply batwaan
2.
USES CHIP P20
4-154
Instruments Texas INCORPORATED POST OFFICE SOX SOU
DALLAS, TEXAS 78822
TYPES D2T2904, D2T2904A. D2T2905. D2T2905A DUAL P-N-P SILICON TRANSISTORS
electrical characteristics at
25° C free-air temperature (unless otherwise noted)
PARAMETER V (BR)CBO
V (BR)CEO
v IBR)EBO
MIN
l
Breakdown Voltage
C =-10*iA.
IC =
Collector-Emitter
l
-10mA,
Breakdown Voltage
E =
ib-o.
l
Breakdown Voltage
Collector Cutoff Current
E = -10>A,
MAX
D2T2905A UNIT MIN MAX
'BEV
Base Cutoff Current
l
Forward Current
Transfer Ratio
-60
-60
V
-40
-60
-40
-60
V
-5
-5
V
V CB --50V,
E =
lE = 0.
-
l
-10
-20
-10
nA
-20
-10
-20
-10
HA
-50
-50
-50
-50
50
50
50
50
nA nA
c - -500 mA,
40 40 40
20 25
35
40
See Note 4
V CE «-10V,
-5 -20
- 150°C
-30 V. V BE = 0.5 V V CE = -30 V, V BE = 0.5 V V CE = -10V, IC=-100uA V CE =-10V, lc - —1 mA V C E - -10 V. c = —10 mA V CE = -10V, IC- -150 mA,
VC E
l
Static
-60
-5
ic = o
' -50 V,
TA Collector Cutoff Current
120
l
Base-Emitter Voltage
B~
—15mA,
l
c = -150 mA,
40
lc -
35
75
50
100
75
100
100
300
30
100
50
-1.3
-1.3
-1.3
-2.6
-2.6
-2.6
-2.6
-0.4
-0.4
-0.4
-0.4
-1.6
-1.6
-1.6
-1.6
V
-500 mA,
See Note 4 l
B =-15mA,
VcE(sat)
Saturation Voltage
lc =
-150 mA,
See Note 4
Collector-Emitter l
B=
-50 mA,
lc -
300
-1.3
See Note 4 lB = -50 mA,
120
40
20
See Note 4
VBE
D2T2905
-60
See Note 4
Emitter-Base
'CEV
"FE
D2T2904A
MAX MIN MAX MIN
Collector-Base
VCB ICBO
D2T2904
TEST CONDITIONS
V
-500 mA,
See Note 4 Small-Signal
Common-Emitter
hel
V CE
=
-10V,
Forward Current
IC f
-30 mA,
= 100
2
MHz
2
2
2
Transfer Ratio
Common-Base Open-Circuit
Cobo
V C B=-10V, lE-0. MHz f -
8
8
8
8
pF
30
30
30
30
pF
1
Output Capacitance
Common-Base Open-Circuit
Cibo
Input Capacitance
NOTE
4:
V EB
=
-2
V,
ic = o, f
-
1
MHz
These parameters must be measured using pulse techniques.
t
w = 300 Ms,
duty cycle
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 7S2Z2
< 2%.
TYPES D2T2904, D2T2904A, 02T2905. D2T2905A DUAL P-N-P SILICON TRANSISTORS switching characteristics at 25° C free-air temperature
MAX UNIT
'
TEST CONDITIONS 1
PARAMETER Delay Time
td
Vcc"-30V,
Time
tr
Rise
t on
Turn-On Time
ts
Storage Time
tf
Fall
t
Turn-Off Time
l
=
c
-150 mA,
l
See Fi 9 ure
VBE(off) - 0.
V CC = -30V, c - -150 mA, lB(2) = 17mA,
l
l
*
ff
Time
B (i)--15mA,
B (D =
1
-13mA,
10
ns
40
ns
45
ns
80
ns
30
ns
100
ns
See Figure 2
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PARAMETER MEASUREMENT INFORMATION -30 V
ov
20on
INPUT
L
16V
-O OUTPUT
I
I
i
JS
INPUT O-
:;5on
+15
V
9
OUTPUT
(See Notes A end B) VOLTAGE WAVEFORMS 1
-6V O
u -O OUTPUT
1
-»-
-C> FIGURE
O
I
'"
»r
TEST CIRCUIT
INPUT
.
—Hr~\
INPUT
i
i
kn
VW
•
I 50 "
OUTPUT
2E.N9W (See Notes
A
and B)
VOLTAGE WAVEFORMS
TEST CIRCUIT
FIGURE 2 NOTES:
A. The input waveforms are t„ - 200 ns, PRR = 150 Hz. B.
Waveforms
supplied by a generator with
the following characteristics:
are monitored on an oscilloscope with the following characteristics:
tr
^
5 ns, Rj n
Z out = 50
=10
SI,
t
< 2
r
ns,
tf
< 2
ns,
Mfl.
PRINTED IN U.SA.
4-156
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
OALLAS. TEXAS 75222
Tl
ton not assume any
or
represent
lhal
they
responsibility
are
free
for
from
any
patent
circuits
37;
shown
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPE Q2T2905 QUAD P-N-P SILICON TRANSISTOR BULLETIN NO. DL-S 7311702, APRIL 1972-REVISED MARCH 1973
DESIGNED FOR MEDIUM-POWER SWITCHING
AND GENERAL PURPOSE AMPLIFIER APPLICATIONS •
High Breakdown Voltage Combined with Very Low Saturation Voltage
•
hpE
•
High
.
.
.
f-r
Guaranteed from 100 •
200 MHz Min
at
mA
(TOP VIEW)
to
500
20 V, 20
mA
C
B
E
NC
E
B
C
14
13
12
11
10
9
1
LAJ
mA
12
3
4
"|_5_"
6
C
E
NC
E
B
NC— No
mechanical data 14-PIN
B
"
7
C
Internal connection
1
PLASTIC DUAL-IN-LINE PACKAGE
NOTES: The
spacing Is 0.100 Each pin centerline Is located within 0.010 of Its true longitudinal position relative to pins 4 and 11. dimensions are in inches unless b. All a.
true-position
between
pin
centerlines.
otherwise noted.
JEDEC TO-116 and MO-001AA Dimensions
Falls Within
absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
EACH TOTAL TRIODE DEVICE Co
I
lector- Base
-60 V -40 V -5 V
Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage
—0.6
Continuous Collector Current Continuous Device Dissipation at
(or
below) 25°C Free-Air Temperature (See Note 2)
....
Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
1
.
2.
f
This value applies between
and 100
mA
collector current
when
Derate linearly to 150°C free-air temperature at the retes of 4
the emitter-base diode
mW/°C
is
open-circuited.
for each triode and 12
mW/°C for the
Previous editions of this data sheet showed higher power diseipetion ratings which heve been found to be in error. and do not represent product changes.
errors
Instruments Texas INCORPORATED POST OFFICE BOX HO 12
>
DALLAS. TEXAS 75222
A
0.5W+ I.5W* —55 C to 150 C •" 260° C »
total device.
The new
ratings correct these
USES CHIP P20
4-157
TYPE Q2T2905
QUAD
P-N-P SILICON TRANSISTOR
electrical characteristics at
25° C free-air temperature (unless otherwise noted)
PARAMETER v (BR)CBO v (BR)CEO
Collector-Base
TEST CONDITIONS
Breakdown Voltage
Collector-Emitter
C =-10mA, c = -10mA, E = -10 MA, V C B = -50 V, V C B - -SO V, V CE = -30 V, VcE - -30 V, VcE = -10V,
Breakdown Voltage
v (BR)EBO
Emitter-Base Breakdown Voltage
'CBO
Collector Cutoff Current
'CEV
Collector Cutoff Current
'BEV
Base Cutoff Current
l
E
l
i
B -o.
l
i
Static
See Note 3
-o
E = lE-0. l
V BE V BE
TA
= 0.5
Forward Current Transfer Ratio
- 125°C
V
= 0.5V IC--100(»A
mA VcE = -10V, c = -10 mA VcE = -10V, c = -150 mA V C E--10V, IC" -500 mA lg = — 15 mA, c = -150 mA Ib - -50 mA, IC" -500 mA Iq = — 15 mA, Iq- -150mA B « -50 mA, IC" -500mA VCE--10V,
hpE
c
MIN -60 -40 -5
-0
I
50
See Note 3
Base-Emitter Voltage
v CE(sat)
Collector-Emitter Saturation Voltage
30 -1.3 See Note 3
-2.6
•
i
|hf e
Cobo Cjbo
NOTE
3:
Common-Emitter
Forward Current Transfer Ratio
V CE
Common-Base Open-Circuit Output Capacitance Common-Base Open-Circuit Input Capacitance
V CB = -10V, V EB = -2V,
These parameters must be measured using pulse techniques.
t
w
=
=
300
-10V,
Ms,
-30 mA,
lc l
E = 0,
ic = o.
duty cycle
V
-0.4 See Note 3
-1.6
l
Small-Signal
300
100
l
V BE
V -20 nA -10 MA -50 nA 50 nA
75
l
l
V V
35
—1
lc =
MAX UNIT
f
= 100
f-
1
-
1
f
MHz
V
2
MHz MHz
8
pF
30
pF
< 2%.
switching characteristics at 25° C free-air temperature
PARAMETER td tr
IC =
Time
Turn-On Time
ts
Storage Time
tf
Fall
"•"Voltage
4-158
Rise
t on
toff
MAX
TEST CONDITIONS*
Delay Time
-150 mA,
R|_ = 200
l
B (|)--15mA,
See Figure
12,
Iq = -150 mA, B (1) RL=37Ii, I
Time
Turn-Off Time
and current values shown are nominal; exact values vary
slightly
-
-13 mA, B (2)
with transistor parameters.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
V BE ( off ) - 0,
DALLAS. TEXAS 75222
l
= 17
UNIT
10
ns
40
ns
45
ns
80
ns
30
ns
100
ns
1
mA,
See Figure 2
TYPE Q2T2905
QUAD
P-N-P SILICON TRANSISTOR
PARAMETER MEASUREMENT INFORMATION
-30 V
Q
ov 200
n
INPUT -16
V
O OUTPUT
(
*-" *on —
•j
r
O———VWi
INPUT
kn
€>
V
90%
OUTPUT
(See Notas A and B) VOLTAGE WAVEFORMS
TEST CIRCUIT
1 FIGURE 1 -TURN-ON TIME
INPUT -30
V
I
r?3
O OUTPUT
•
i
90%
i
VV
OUTPUT 10*
(See Notes A and B) VOLTAGE WAVEFORMS
TEST CIRCUIT
FIGURE 2-TURN-OFF TIME NOTES:
A. B.
The Input waveforms are supplied by • generator with the following characteristics: Z out - 60 SI, Xf < 2 tw - 200 ns, PRR - 150 ppt. Waveforms ara monitored on an oscilloscope with the following characteristics: t r < S ns, R| n - Mft, C| n < 12 pF.
ns, tf
<
2
ns,
PRINTED IN U.S.A.
472
Tl
cannsl sfiumt any rtipsniisilily Isr an r circuits thswn
sr
rsaratent
that
tniy
an
ffst
frsm sslsnl InfrinemMt.
TEXAS INSTMJMENTS «ESE»VES THE IIGHT TO MIKE CHANGES AT ANY TIME IN
MDEII TO IMPROVE DESIGN AND TO SUPPLY THE IEST MODUCT POSSIBLE.
Texas INCORPORATED Instruments POST
Ot*r*ICI
BOX 9012
•
DALLAS. TEXAS 79322
4-159
TYPES A6T2907, A5T3644. A5T3645, TIS112 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S
731 1318,
MARCH 1970-REVISED MARCH
1S73
SILECT t TRANSISTORS* DESIGNED FOR HIGH-SPEED, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS •
A5T2907, A5T3644, and A5T3645
•
TIS1 12 Processing Includes Operational Aging at 300
Electrically Similar to
2N2907, 2N3644, and 2N364B
mW for 24 Hours
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting Ml L-STD-202C, Method 106B. The transistors are insensitive to light.
T
1
>0,A
01*0 b 0.010
-HAD TIMPHATUM MIASURIMCNT NOTIt:
A. I.
C.
absolute
maximum
POINT 1/1* 'ROM
CAM
lead diametei is net conttalled in this sn«. Leads having maiimwm diameuf (0019 shall at within 0.007 at thelf true positions "wmwiJ in the aaaing plan* 0.054 below the teatinp. plane •( the device relative to a maNimwn-diameter aachpae. AH dimensions o(« in inches.
ratings at 25° C free-air temperature (unless otherwise noted)
A5T2907
AST3644 A5T3645
TIS112
-60 V -40 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
-5V
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25° C Case and Lead Temperature (See Note 3)
_
Storage Temperature Range
«
Lead Temperature 1/16 Inch from Case for 10 Seconds
•
NOTES:
1.
Thli valua spplla*
bltwHn
and 600
mA collector currant whan tha baia-amlttar dloda
It
-45 V -45 V
-60 V -60 V
-5V mA
-5V
-600
B5°C to 150°C 260°C
—
-
_
t>
opan-clrcultad.
Darata linaarlv to 150°C fraa-alr tamparatura at tha rata of 5 mW/°C. 3. This rating appllai with tha antlra eata (Including tha laada) malntalnad at 26° C. Darata llnaarly to 160°C caM-and.laad tamparatura at tha rata of 12.B mW/°C. 2.
f Trademark of
tv.
S. Patant
Taxat Inttrumantt No. 3,439,238
USES CHIP P20
373 4-1 BO
TexasINCORPORATED Instruments o
;son
i-
V A
(See Notes
90%
OUTPUT
end B)
VOLTAGE WAVEFORMS
TEST CIRCUIT
FIGURE 1-ABT2907 and TIS112
15V
-6V
O
Q
0V -30
V
UV 1
-O OUTPUT
90% INPUT O-
INPUT
V X
(See Notes
A
OUTPUT
I
and B)
VOLTAGE WAVEFORMS
TEST CIRCUIT
FIGURE 2-A8T2907 and TIS112 NOTES:
A.
The input waveforms
are supplied
by
a
Z out - 60
generator with the following characteristic!:
fl, t r
<
2
<
ns, tf
2
ns, t
w-
200
ns,
PRR
- 160 pps. B. Waveforms are monitored on an oscilloscope with the following characteristics:
TIS112 All
TIS112
transistors are aged for a
approximately 300
mW.
tr
<
6
ns, R| n
- 10
MO,
C|„
<
12 pF.
OPERATIONAL AGING
minimum
of 24 hours
in
the circuit shown below. Total device dissipation
All static characteristics are tested prior to
is
and after aging. Dynamic characteristics are tested
as necessary to guarantee the specified limits after aging.
-40
V
Adjust R, for -10 at point
A
NOMINAL CONDITIONS -30 V V CE
V
to ground.
PRINTED IN
4-162
Instruments Texas INCORPORATED poer oppice box sola
•
dallac, texab 7*222
U.S.A.
Tl
cannot siiumt any responsibility for any circuits ihowfl
sr
fepretenl
that
rtiery
an
free
from potent
37!
infringement.
M
ANY TIME TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIBLE.
TYPES 2N2913 THRU 2N2920. 2N2915A. 2N2918A, 2N2919A, 2N2920A. 2N2872 THRU 2N2S7I
DUAL N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S
691
1
165,
MARCH
1969
A BROAD FAMILY OF DUAL TRANSISTORS RECOMMENDED FOR •
Differential Amplifiers
•
High-Gain, Low-Noise, Audio Amplifiers
•
Transducer Signal-Conditioner Amplifiers
•
Low-Level Flip-Flops
'mechanical data
ALL LEADS INSULATED FROM CASE Dimensions without tolerance designate true position. Leads having maximum diameter (0.019") measured in gaging plane 0.054" +0.001" -0.000" below the seating plane of the device shall be within 0.007" of their true position relative to a maximum width tab.
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
ALL DIMENSIONSARE IN INCHES UNLESS OTHERWISE SPECIFIED
— TYPES 2N2913THRU
OUTLINE A
1
1
2
COLLECTOR
2
2N2920, 2N291SA, 2N2916A, 2N2919A, 2N2920A
ALL LEADS INSULATED FROM CASE LEADS
£512
FALLS WITHIN TO-71 DIMENSIONS
DIA -,
016 0.310
0170
O.O30_j
MAX f
1
\n
0.330
o.
OlW
0.170
DIA
OIA
1
'
EMITTER BASE 1
-
^
EMITTER BASE 2
— mm"
TYPES ZN2972 THRU 2N2979
quick-selection guide (for details see characteristics TYPE
•JEDEC
M'NV| BR ,ceo
60V
45
V
•
2N291S
2N2974
• •
2N2976 2N2977
2N2919 2N2919A
2N2978
2N2920 2N2920A
2N2979
0.9
h FE1
0.8
_V BE2| c - 100 uA)
I&v be1 -v BE2 )At a
lv BE1
h FE2
It
1.5
mV
3mV
rr A (ii-**c.T A(a ,
5mV
0.5
mV
1
mV
|
-12V0 2mV
•
2N2975
2N2918
MIN
11 c - 10 nA) 60-240 150-600
2N2972 2N2973
2N2916A 2N2917
on the following pages)
MIN-MAXh FE
2N2914
2N291SA 2N2916
2
ALL DIMENSIONSARE IN INCHES UNLESS OTHERWISE SPECIFIED
OUTLINE B
OUTLINE A OUTLINE B
1
2
COLLECTOR
1
2N2913
1
COLLECTOR
•
•
•
•
•
• •
registered data. This data sheet contains
all
• •
•
•
•
•
•
• •
•
•
• • •
• • • •
•
•
•
•
«
• •
•
• •
•
*
•
•
•
• •
applicable registered data in effect at the time of publication.
USES CHIP Nil
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 79222
4-163
TYPES 2N2913 THRU 2N2920. 2N2915A. 2N2916A. 2N2919A, 2N2920A. 212SI2 THRU 2i2S?S
DUAL N-P-N SILICON TRANSISTORS maximum
•absolute
ratings at
25°C
temperature (unless otherwise noted)
free-air
2N2913 thru
2N2972
2M2918
thru
2N2977
2N2915A 2N2916A
Collector-Emitter Voltage
ISm Not*
1)
—
60
45
45
60
60
6
6
V V V
6
30
V
mA
30
30
0.6
0.25
0.3
0.3
0.5
0.25
0.3
W
0.75
1.6
0.5
0.75
0.78
1.5
0.5
0.75
w
2)
Continuous Daviea Dissipation at lor balow) 3)
Storaga Tamparatura Ranga
-86 to 200
-65 to 200
-85 to 200
-65 to 200
°c
300
300
300
300
°c
Laad Tamparatura 1/16 Inch from Caaa
60 Seconds
'electrical characteristics at
1
25°C
free-air
temperature (unless otherwise noted)
individual triode characteristics (see note 4)
2N2913 2N291S 2N291SA 2N2917 2N2972 2N2974 2N2976
TEST CONDITIONS
PARAMETER
MIN V(BR)CBO
'CBO
Cotlactor-Basa
Breakdown Voltaga
-10«A,
l
c
Collaetor-Emittar Breakdown Voltaga
l
c - 10 mA,
Emittar-Basa Braakdown Voltaga
l
E
-10nA.
Vcb-45 V,
Collaetor Cutoff Currant
V CB
•ceo
Collactor Cutoff Currant
ebo
Emittar Cutoff Currant
Static
Forward Currant
l
B -
l
c -0
l
E
Saa Nota 5
0,
Vbe V CE(»«
- 45 V, l E -
1
- 5 V,
Bess-Emitter Voltaga
V CE -5V,
Collaetor-Emittar Saturation Voltaga
IB
.
2.
3.
4. 5.
MAX
MIN
2N2919 2N2919A 2N2978
2N2920 2N2920A 2N2979
60
60
45
45
60
60
T A - 150"C
6
6
6 10
2
2
nA
10
10
10
10
liA
2
2
2
2
2
2
2
2
nA nA
240
150
600
60
240
150
60
l
100
225
100
225
150
300
150
300
15
30
15
40
l
c - 10 ^A,
T A - -6S°C
1
niA
Those values apply when the base-emitter diode is open-circuited. Derate linearly to 200°C free-air temperature at the following rotes:
600
1401
c -100|iA
100 mA, lc *
V V V
10
l
l
UNIT
MAX MIN MAX MIN MAX
45
6
0,
2N2914 2N2916 2N2916A 2N2918 2N2973 2N2975 2N2977
45
-0
I
V CE
'JEDEC
E
l
Trancfar Ratio
NOTES:
-0
l
V CE -5V, B -0 V EB "5V. lc-0 V CE -5V. c -10uA V CE -5V. c -100)iA V CE - 5 V. c - 1 mA
"FE
1
.72
0.7
0.7
0.7
0.7
V
0.35
0.35
0.35
0.35
V
mW/°C
for each triode and 2.86
mW/°C
for total device
(2N2913 thru 2N2920, 2N2915A. 2N2916A, 2N2919A, 2N2920A); 1.43mW/°C for each triode and 1.72 mW/°C for total device (2N2972 thru 2N2979). Derate linearly to 20O°C case temperature at the following rates: 4.3 mW/°C for each triode and 8.6 mW/°C for total device (2N2913 thru 2N2920, 2N2915A, 2N2916A, 2N2919A, 2N2920A); 2.96 mW/°C for each triode and 4.3 mW/°C for total device (2N2972 thru 2N2979I. The terminals of the triode not under test are open-circuited for the moaauramant of these characteristics. This parameter must be measured using pulse techniques. t w = 300 us, duty cycle K 1%.
registered data
t These values
apply to types
$This value applies to type
4-164
DEVICE
0.3
Continuous Device Dissipation at (or batow)
for
TOTAL
(±200lt
(±2O0)t
30
25°C Caaa Tamparatura ISaa Nota
DEVICE
60
6
25 C Free-Air Tamparatura (Saa Nota
EACH TRIODE
45
Coltaetor-2 Voltage
Continuous Collector Cun*nt
UNIT
TOTAL
EACH TRIODE
DEVICE
2N2978 2N2979
46
Emitter-Base Vottoga Collector- 1
TOTAL
EACH TRIODE
TOTAL EACH TRIODE DEVICE Collector-Base Voltage
2N2919 2N2919A 2N2920 2N2920A
2N2915A, 2N2916A, 2N2919A. and 2N2920A
2N2916A
only.
only.
Instruments Texas INCORPORATED POST OPPtCE BOX 9012
DALLAS. TEXAS 75222
TYPES 2N2913 THRU 2N2920. 2N2915A. 2N2916A. 2N2919A. 2N2920A. 2N2S72 THRU 2N2S7S
DUAL N-P-N SILICON TRANSISTORS 'electrical characteristics at
25°C
free-air
temperature (continued)
individual triode characteristics (see note 4)
2N2913
2N291SA 2N2916A 2N2919A 2N2920A
thru
2N2920
PARAMETER
TEST CONDITIONS
2N2972 thru
UNIT
2N2979 Small-Signal
"•»
Common-BaM
VCB-SV.
l
c -
1
mA,
f
-
1
kHz
VCB -SV.
l
c-
1
mA.
1
-
1
kHz
Vce-SV.
l
c-
0.5
V CB
l
E -
0.
f
- 140
to
1
MHi
l
c -
0.
f
- 140 kHz to
1
MHz
NUN
MAX
MIN
MAX
25
32
25
32
n
Input Impadaneo Small-Signal
»ob
Common-BaM
Output Admittanet Small-Signal
Common-Emittar
lhf.l
Forward Currant Tranafar Ratio
Common-BaM Opan-Circuit
C bo
- S V.
1
mA, f - 20 MHz kHz
1
3
3
*imho
8
E
pF
10
pF
6
Output Capacitanca
Common-BaM Opan-Circuit
Cibo
v EB -asv
Input Capacitanca
triode matching characteristics
2N291S 2N2916 2N2919 2N2920 2N2974 2N297S 2N2978 2N2979
TEST CONDITIONS
PARAMETER
MIN V CE -5V, h FE1
Static Forward-Currant-
SaaNotaS
h FE 2
Gain Balance Ratio
V CE - 5 V. T A - -55°C
i
l
Diffarantial
V CE -5V. V CE - 5 V.
BaM-Emittar-Voltaga-
V CE
BaM-Emittar-Voltaga
uBE1- v u BE2l v
i
l
AiV BE1 -V BE2 aTA l
l
Diffarantial
I
I
C -100 V A,
0.9
c - 100 mA to
to 125°C. Saa Not. l
I
- 5 V.
c -100iiA c - 10 uA to
1
1
Changa
MAX 1
mA.
MIN
1
0.85
1
mA
I
C
'operating characteristics at 25
" 25 C.
free-air
MIN
MAX
0.8
1
3
1.5
5
5
2
10
0.8
0.4
1.6
1
0.5
2
mV mV
l
T A(1)
MAX
0.9
UNIT
6
c - 100 uA. Ta(1)"2S°C T a(2 |--55°C V ce -5V. c -100(iA.
With Tamparatura
2N2917 2N2918 2N2976 2N2977
2N2915A 2N2916A 2N2919A 2N2920A
T A(2 • 125 C )
temperature
individual triode characteristics (see note 4)
PARAMETER
TEST CONDITIONS
Vcs F
Avaraga
NoiM
f
Figuro
-
1
5 V,
l
c -10uA.
I
C -10|>A.
NoiM bandwidth -
•JEDEC
4.
The terminals
6.
The lower
7.
This parameter
of the triode not
of the is
MAX
MAX
4
3
4
3
R G -10kn,
in
UNIT
dB
R G -10kn,
1S.7 kHz. Sea Noto 7
under
two hpg readings measured
2N2920A 2N2973 2N297S 2N2977 2N2979
2N2914 2N2916 2N2916A 2N2918 2N2920
NoiM bandwidth - 200 Hz
kHz.
V CE -5V.
NOTES:
2N2919A 2N2972 2N2974 2N2976 2N2978
2N2913 2N2915 2N2915A 2N2917 2N2919
Is
test are open-circuited for the
taken at
measurement of these
characteristics.
hpjr-].
an amplifier with response
down 3 dB
at
10 Hz and 10 kHz and a high-frequency
rotloff of
6 dB/octave.
registered data
Instruments Texas INCORPORATED POST OFFICE SOX
SO 12 • DALLAS.
TEXAS 7S222
4-165
TYPES 2N2913 THRU 2N2920, 2N291SA, 2N2916A. 2N2919A. 2N2920A, 2N2SI2 THRU 212SIS
DUAL N-P-N SILICON TRANSISTORS TYPICAL MATCHING CHARACTERISTICSt FOR TYPES
2N2915, 2N2915A, 2N2916, 2N2916A, 2N2919, 2N2919A,
2N2920. 2N2920A, 2N2974, 2N297S, 2N2978. 2N2979
STATIC FORWARD-CURRENT -GAIN BALANCE RATIO vs
COLLECTOR CURRENT
o 2
*
I-
1
1-0
5V, F
f
Average Noise Figure
•
1
l
c -10uA.
R G -10kn,
Noise bandwidth » 200
kHz.
V CE -5V,
*
JED EC
4.
The terminals
6.
The lower
7.
This parameter
is
two hp^ readings measured
in
is
UNIT
MAX
Hz
dB
l
4
of the triode not under test are open-circuited for the
of the
2N2920A 2N2973 2N2975 2N2977 2N2979
4
c -10uA. R G -10ka, Noise bandwidth = 15.7 kHz, See Note 7
NOTES:
2N2914 2N2916 2N2916A 2N2918 2N2920
3
measurement of these
characteristics.
taken as hp^^
an amplifier with response
down 3 dB
at
10 Hz and 10 kHz and a high-frequency
rolloff of
6 dB/octave.
registered data
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
4-171
—
TYPES 2i2S13 THRU 2N2920. 2N291IA, 2N2S1SA, 2N2I19A. 2i2l20A, 2N2972 THRU 2N2979
DUAL N-P-N SILICON TRANSISTORS TYPICAL MATCHING CHARACTERISTICS! FOR TYPES 2N2915. 2N2915A. 2N2916, 2N2916A. 2N2919, 2N2919A, 2N2920, 2N2920A, 2N2974, 2N2975. 2N2978, 2N2979
STATIC FORWARD-CURRENT-GAIN BALANCE RATIO vs
COLLECTOR CURRENT 1.2
II
1
25°C 1.0
3
0.8
I
I
k
- -55°C
^T A"
Y
125°C
0.6
0.4
V CE = 0.2
5V
s»e Note 6
III 100
40
lc
— Collector Current — uA FIGURE
1000
400
1
BASE-EMITTER-VOLTAGE DIFFERENTIAL
BASE-EMITTER- VOLTAGE DIFFERENTIAL
vs
vs
FREE-AIR TEMPERATURE
COLLECTOR CURRENT 2.0
fc
1.8
o
2.0 1
Vc E = 5
= 5
V
1.8
V
lc
.
1.4
jj
1
VCE
1
1
A
1
4
1
V
- 10 uAtc> 100 uA
u-
o
»•«
3 41
1.2
g*
—
1
I
1.0
o
25°
TA =
.
r—
>
T* = 25°C
.
II
s
s
4>
T* = -55°C
J
0.8
E
1
0.8
0.6 I
0.4
% 1
0.2
=r
2
>
40
10
lc
100
— Collector
Current
— uA
400
1000
6:
The lower
of the
two h F f£ readings
is
25
75
125
— Free-Air Temperature — °C
175
FIGURE 3
taken es hpr£l-
Unlike normal slngle-trlode characteristics, matching characteristics For example, a minority of devices have been observed with smaller mismatch at 150°C than at -65°C, as opposed to the average behavior as shown In figures 2 and 3.
tThese curves represent the average behavior of groups of dual of dual transistors
VBE
-25 TA
FIGURE 2
NOTE
0.2
£
may
differ considerably In behavior
transistors.
from the
typical.
PRINTED IN U.S.A.
4-172
Instruments Texas INCORPORATED POST OFFICE BOX S012
•
DALLAS, TEXAS 7S222
TEXAS INSTRUMENTS RESERVES THE RICNT TO MAKE CHANGES Al ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N2BS4, 2N3012 P-N-P SILICON TRANSISTORS BULLETIN NO. OL-S 645051, AUGUST 1964
DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS VtE( „„ 0.5 v Max at 100 ma • High f T 400 Mc Min • Guaranteed
•
•
•
* mechanical
data
THE COLLECTOt
IS
III
ELECTIICAL
COMIACT WITH THE CASE.
AIL JEDEC T0-1I DIMENSIONS AW)
NOTES AIE APNICAILE.
maximum
* absolute
ratings at 25*C free-air temperature (unless otherwise noted)
Collector-Base Voltage Collector-Emitter Voltage (See Emitter-Base Voltage Collector Current
— 12 v Note
-12 v
1)
—4 v —200 ma
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) Operating Collector Junction Temperature Storage Temperature Range Lead Temperature K» Inch from Case For 60 Seconds * electrical
characteristics at
V(R)CBO
V |K C EO
Collactor-Emiltei
Iraakmnm Voltejt
l
VfWICES
ColUcIor-Emitl»f
IimMowii Voltage
l
V||R|EIO
Emittir-lflst
'cBO
Calltttor Cutoff
l
CollKler Cutoff
B
las* Current
c =-10/ia.
l
treaMewit VoltoM
cts
c =—10
l
c =-10/ia.
l
E
=-100/ia,
V c ,=-.,.
l
CorfMt
Caimf
l
Farward Current Tronsftr Ralfe
l
1. This
value applies between TO /xa and 10
3. 4.
'Indicates
Derate
I
i
200°C
ma
collector current
V
T
0,
B
A
= 125»C
= -1 mo.
l
=-3 ma,
l
i
I
TA
= I5»C
=«
= —M
lit
-M to
ata,
c =-100ma.
Sm
Nata 4
Sm Nan
Sm
30
4
40
Nata 4
25
c =—30ma,
ita
ISO
30
120
20
17
Sm
Nata 4
-0.15
-0.15
c —30 ma. c =-100mo.
Sm
Nata 4
-0.20
-0.20
SmNoIo4
-0.50
=
c
na
25
-0.50
=—
30 ma,
-0.40
Note 4
SmNoU4
-0.71 -O.'l
-0.71
lc=—30 ma.
Sm
-0.(5
-1.2
-0.15
c =—IMmc,
SmHoIo4
l
n
-5 30
c =— lOma,
l
-to
c =-10»ia.
Sm
ma,
-10
when the base-emitter diode
if
Nate 4
-1.7
-0.M -1.2 -1.7
open-circuited.
2.0emw/C°.
nearly to 200°C case temperature at the rate of 4.85
This parameter must be measured using palse techniques.
JE0EC
-4
StaHatia
I|=—1 ma. li = —3 ma.
free-air temperature at the rate of
-4
= =
c =-10mo.
l
A =-55»C,
l,=-IO
2. Derate linearly to
¥
c E
l
l|=:-3 im, ta =is«c.
NOTES:
-12
lc
=-".
I,=-10m,
lalo-Emitter Voltage
-12
»BE
l|
K
V
K=
»a=-*».
T
Calleefor-Emifler Saturatioa Voltage
V
»*=».
vCE
UNIT
-12
»«=-...
l
2N3012
-12
SmNoIo4
»«==•
YCE =-0.S,.
V
300°C
-12
»CE=-««.
Vce =-0.5,,
v CElHt)
+200*C
to
-12
V
a =-0.3,,
Static
w w
200°C
-65°C
MIN MAX MIN MAX
E=
!,=«.
ma.
V
h^
2N2894
TEST CONDITIONS
Colletlor-laso Irootaown Valtago
l
1.2
25*C free-air temperature (unless otherwise noted)
PARAMETER
|
0.36
PW
mw/C°.
= 300
/.sec.
Duty Cycle
= 1%.
leajsttTtd data.
USES CHIP P11
Texas INCORPORATED Instruments POST OFFICE BOX 5012
DALLAS, TEXAS 75222
4-173
TYPES 2N2894, 2N3012 P-N-P SILICON TRANSISTORS 'electrical characteristics at
25 °C free-air temperature
Small-Signal Common-Emitter
K\
V CE
Forward Current Transfer Ratio
Common-Base Open-Circuit
©bo
=-10v, c l
» C ,=-S».
Output Capacitance
Common-Base Open-Circuit «ib,
2N2894 2N3012 MIN MAX MIN MAX
TEST CONDITIONS
PARAMETER
=-0.5
y,
I
e
=—30
=
mo,
f
UNIT
= 100ltc
0,
lc=».
Input Capacitance
'switching characteristics at 25°C free-air temperature TEST CONDITIONS?
PARAMETER I
Turn-On Time
*on
R l
t^
Voltage and
Turn-Off Time
current values
c = -30mo, = 62fi,
shown are nominal; exact values vary
=-1.5
See Figure
L
c =r-30ma,
RL
I,,,,
= 62Q,
l
ma,
2N3012
MAX
MAX
40
to
nsec
90
7$
nsec
UNIT
=3v,
1
Kl ]=-1.5ma,
See Figure
V re|o)fl
2N2894
1^2) —
ma,
1.5
1
slightly with transistor parameters.
"PARAMETER MEASUREMENT INFORMATION -2 v 'on
Vw = +3v
'off
VM =-4v
n.
100
62
n -O OUTPUT
0.1
INPUT
jjf
O-
*
Wv— €>
2
ioo
kn.
n 10%
(See Notes a and b
FIGURE
NOTES:
1
- TURN-ON AND
following
The input waveforms are supplied by a generator with
b.
Waveforms are monitored on an oscilloscope with the following characteristics:
JEDEC
the
TURN-OFF TIMES
characteristics:
a.
'Indicates
)
VOLTAGE WAVEFORMS
TEST CIRCUIT
t
r
<
2^ = 50 Q, 1
nsec,
X jn
t
r
>
<
1
nsec,
PW
>
200 nsec.
100 kfi.
registered data.
PRINTED IN
4-174
Instruments Texas INCORPORATED POST OFFICE BOX 5012
*
DALLAS. TEXAS 75222
Tl or
USA.
3-7.
cannot assume any responsibility for any circuits shown represent
that
they are
free
from
potent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
I
TYPE 2N3015 N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 645017, MARCH 1964
DESIGNED FOR HIGH-SPEED, HIGH-CURRENT SWITCHING APPLICATIONS
'mechanical data
—
4-
I
-r—
I'M
13°
0.100
i.s
I
MIN
j i
IN—*—
£
UAOS
*
IS IN
ELECTIICM.
CONTACT WI1H THE USE. JUL JEDEC 10-5 DIMENSIONS
Ua
NOTES AIE APftlCAIlE.
r'w^ooS'
UK/
"lion
OmONAl
maximum
THE C011ECT0I
0.045 0.039
DETAILS Of OUTUNI THIS ZONS
'absolute
—
mt
0.01*
UNUS5 OIHWWM1
ratings at 25*C free-air temperature (unl*u otherwise noted)
Collector-Base Voltage
60 v
Collector-Emitter Voltage (See
Note
30 v
1)
Emitter-Bate Voltage
5v
,
Total Device Dissipation at (or below)
25*C Free-Air Temperature (See Note
Total Device Dissipation at (or below)
25*C Case Temperature (See Note 3)
w w 3.0 0.8
2)
Operating Collector Junction Temperature
200*C
Storage Temperature Range
* electrical
characteristics at
-o5*C
25*C free-air temperature (unless otherwise noted)
PARAMETER CoUMtor-las*
Vmicfo
Colltctof-Emitttr
Voftago
Inakdown
Voltofe
Collector Cutoff Currant
It
las* Currant Static
VK
laM-Emithr VoHogo
Vcemi
li lt
Colhctor-EmHttr Saturation Voltage
|
Forward Current Transhr Ratio
,
Common-Bait Optn-araNt
^ NOTES:
1. Toll 2.
mluo eppliM
tenia
Small-Signal Common-Emirttr
'"'•i
llMatlgr to
Mwm M0*C
1
mo
hto-ali
wo' 30
m MlltcMr
uaporatwo
cotttot
V V
=
1«*C
SttNott4
30
See Note 4
10
200
V* 1*
-0.2
1*
120
It
See Note
4
U
V
li
See Note 4
1.6
V
Set Note 4
0.4
V
SttNott4
1.0
V
10
n
Vct
Output Copodtonct
V
30
0.2
TA
UNIT
60
5
E
It
i.
See Note 4
lt
Forward Currant Transftr laflo
hfc
/ifl,
l
l
Cofltctor Cutoff Currant
Icto
= = 100 = 0. c = 30 ma, = 100 no. lc = V« = 30v, V«=0 = 0. Vct = 30v, V CT = 20v, VK = lc = 150 ma. ¥cs = 10v. lc = 300 ma. »ct = 0.7v. = 15 ma, lc = 150 mo. = 50 ma, lc = 500ma. ls= 15 ma. lc = 150 ma. = 50 ma. lc = 500 ma. V« = 10v, lc = 50 ma, lc
VfKitK) Emitter-last Inakdown Voitoft Ices
MIN MAX
TEST CONDITIONS
Inakdown
Vmicoo
+200*C
to
= 10v,
wtM Hw btu-wlttor
di«d«
l,
li
= 0.
f
=
lOOMc
f=140kc
2.5
ifM-tkalM.
it Ika rtta tl 4.» anr/C°.
» 2O0°C mm taaemtaia at Hw roto of 17.1 m/C*. Tkm •omutin noil bo iMownd aslaa lain tocaaioaoi. PW = 3M juoc,
3. Darata llMorlr 4.
•laelcatai
Duty Cjclt
<
2%.
USES CHIP N19
JE0EC ragMaraa data
TexasINCORPORATED Instruments POST OFFICE BOX 9012
•
DALLAS. TKXAS 7S222
4-175
TYPE 2N3015 N-P-N SILICON TRANSISTOR
* twitching
characteristics at
23"C frM-alr tcrnporatur*
Turn-off
to« tVtltato
mi
Thm
ih«m
corront tolooi
UNIT
40
mtt
1
40
ruse
60
IUK
60
nsoc
m » - 30 ma, Vmm = ».k = 8011, Sm Hgura HI = 50 ma, V mm = 0, «i = 48 n, Sta Fijuro lmi = S0iiM, Urn = -35 ma, r\ = o0ft, Sm Flgurs 2 = -SSma, K = 48 n, Sm Figure 2 KI) = 50ma, H
le = 800 mo, lc = 500 ma, lc = 300mo, lc = 500mo,
Turn-on Tim*
la,
MAX 1
TUT CONDITIONSt
PARAMITIR
oro umiIihI;
*
nod
wluoi wry
\
l
|
I
l
ill|hlly
with tramlitw
,|
pmmion.
PARAMETER MEASUREMENT INFORMATION
p+25v INPUT Rl I I
-O OUTPUT 200
INPUT O-
n
€>
"I
Nominal lc
300 mo
80
O
+ 7v
500 ma
48
n
+ 11 V
CIRCUIT FIGURE
1
OUTPUT
90%
VOLTAGE WAVEFORMS
CONDITIONS
-TURN-ON
P> I
v iB
Ri
son
TEST CIRCUIT
W
TIMES
INPUT J
I
OUTPUT 0.05 H '
INPUT
Nominal
> son
Rt
V.i
300 mo
son
+ 10 v
-13 v
500 mo
48
a
+ 16 v
-21 v
lc
CIRCUIT
TEST CIRCUIT
M10%
OUTPUT
O—f—It
*oH
Vi„
VOLTAGE WAVEFORMS
CONDITIONS
FIOURE 2 -TURN-OFF TIMES
NOTES, f
.
b.
Tt» Input
vmfomil «•
Wmformi «• monltond
•MlttlM JEDEC
ronjttorod'
wppliocl ky
mm
• polM foturatw *l»
mcUIouodo wlrn
tin
M^nlaf
ilnrKtaflirlUi
tko follmlni dnrociorlillcii
l
r
£
1
1^ am,
= JO 0, l ln
>
I,
£
I
an, FW
= M0
n
100 HI.
Ma
PRINTED IN U.S.A.
4-178
Instruments Texas INCORPORATED POST OPPIOI »OX Mil
•
OALLAO. TIXAO 7MI1
Tl
cannot attumt ony rnponliblllty for any clrcuiti itiown
or
riprmnt
that
tnoy aro
frn from potonl
37
infrlnffcnionr.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN OWED TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT P0SSME.
TYPE 2N3036 N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 734232. AUGUST 1963-REVISED MARCH 1973
FOR GENERAL PURPOSE, MEDIUM-POWER AMPLIFIER AND SWITCHING APPLICATIONS • High Power Dissipation Capability: 10watTc*25°C •
High Breakdown Voltage Combined with Very Voltage
•
DC
Beta Guaranteed
From 100
jua
to 1
Low Saturation
amp
mechanical data THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
tffl-
H3 HI,
I
-J-
ALL DIMENSIONS ARE OFOUTUMEIN [ONI OfTICNM.
—L-«
IN
"™
INCHES
UNLESS OTHERWISE
MATINO
KM
SPECIFIED
ALL JEOEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
maximum
absolute
ratings at
25°C free-air temperature (unless otherwise noted) 120v
Collector-Base Voltage Collector-Emitter Voltage (See Note 1)
80
.
7".
Emitter-Base Voltage Continuous Collector Current
.
w* JlOwt
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2)
Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
0.8
.
.
.
.
\5w*
-65*C
Storage Temperature Range
Lead Temperature K< Inch from Case for 10 Seconds 'electrical characteristics at
Breakdown Voltage
V|K|CtO
Collector-Emitter
V|M)EIO
Emitter-Base Breakdown Voltage
MIN
TEST CONDITIONS
PARAMETER Collector-Base
= 100 /xa. = c = 30 ma. u=o. = 100 /xa, lc = = V C = 40 v, Vci = 60 u = o, lc = Ves=5v, V„ = 10v, lc= 100 pa lc = 10 ma Vci = 10 Vci = 10 c = 150 ma. lc = 500 ma. Vci = 10 o, lc = Vci = 10v, V« = v, lc = ISO ma. = ISma, lc = 150 ma. = 50 ma, lc = 500 ma, = IS ma, lc = 150 ma. = 50 ma, lc = 500 mo. l
Breakdown Voltage
l
(See Note 4)
E
TA
=
n
Static
Forward Current Transfer Ratio
v,
l
v.
Base-Emitter Voltage
Vci(nl|
Collector-Emitter Saturation Voltage
V V
1
10
na
10
Ma
10
na
20
40 (See Note 4)
50
(See Note 4)
25
ISO
(See Note 4)
15
30
li
(See Note 4)
0.75
1.1
V
li
(See Note 4)
1.5
V
li
(See Note 4)
0.25
y
li
(See Note 4)
1.0
y
This value applies when the base-emitter diode It open-circuited. 2. Derate linearly to 200°C free-air temperature at the rate of 4.67 mw/°C. 3. Derate the 10-watt rating linearly to 200° C case temperature at the rate of 67.1 mw/°C. Derate the E-watt (JEDEC registered) retlng linearly to 200° C cate temperature at the rate of 28.6 mwr C. 4. These parameters must be measured using pulse techniques. PW - 300 us, Duty Cycle < 2%. The JEDEC registered outline for these devices Is TO-6. TO-39 falls within TO-6 with the exception of lead length. 'JEDEC registered data. This data sheet contains all applicable registered dete In effect at the time of publication. tThtt value It guaranteed by Texat Inttrumantt In addition to the JEDEC registered value which It alto thown.
NOTES:
V
(See Note 4)
1
1
v*
UNIT
7
150°C
v,
h
200°C 300 C
80
lE
i
Emitter Cutoff Current
MAX
120
E
l
l
Collector Cutoff Current
c
v,
Ieio
to
25°C free-air temperature (unless otherwise noted)
V|i*|cio
Icto
*
v
.
Instruments Texas INCORPORATED •OCT orpioe aox 1012
•
Dallas, tixas 7sih
USES CHIP N23
4-177
TYPE 2N3036 N-P-N SILICON TRANSISTOR
* electrical
characteristics at
25°C free-air temperature
PARAMETER
Small-Signal Common-Emitter
hf.
c
=
10ma.
f
=
lkc
120
900
l
c
=
10ma.
f
=
lkc
40
180
l
c
=
10mo,
f
=
lkc
c
=
10ma.
10y,
U
=
0,
f
0.5 v,
lc
=
0,
f
V«=luv,
Forward Current Transfer Roth)
h»
Small-Signal Common-Emitter
Vce=10v,
Output Admittance
K\
Small-Signal Common-Emitter
Vce=»0v,
Forward Current Transfer Ratio
u
Common-Base
Open-Circuit
¥c =
Output Capacitance
Common-Base Open-Circuit
Cib
V Et
Input Capacitance
=
MAX
l
¥ct=10v,
Input Impedance
MIN
CONDITIONS
TEST
Small-Signal Common-Emitter
h,.
l
f
UNIT ohm
120
lunho
=lmc
IS
P*
=
85
pf
=
20 mc
2.5
lmc
"switching characteristics at 25 °C free-air temperature
Delay Time
tr
Rise
t,
Storage Time
t,
Fall
MIN
TEST CONDITIONS f
PARAMETER td
= 150 mo, = - 15 ma, '•PI V*i.ff| = -2.75v, lc
Time
Itiii
=
150 ni
= 40n,
(See Figure 1)
Time
tVoltagt ond currant valuei fhown art nominal; txact valutt vory illgntly with
MAX 30
15 ma,
UNIT nsec nsec
1
/usee
200
nsec
transistor paramtttrs.
'PARAMETER MEASUREMENT INFORMATION
O
OUTPUT
2SOII
O—WV
INPUT
OUTPUT
VOLTAGE WAVEFORMS
TEST CIRCUIT
NOTES:
a.
Tin input wmfortn hoi tht following cutroctorlitkli
b.
Waveform on
•Indlcoloi
t
r
<
I
FIGURE
1
nsec, t,
<
SWITCHING TIMES
1
nstf,
monltores) «i on oscilloscope with tho following choractoriitlcii
t
f
fW
>
<
100 kO, C ln
1%.
<
1! pf.
JEDEC nglitortd nolo
PRINTED IN U.S.A.
4-178
Instruments Texas INCORPORATED POST OFFfCE BOX B0I2
•
DALLAS. TEXAS 7S222
Tl
cannot assume any rcsponsibilily for any circuitf shown
or
represent
that
they arc free
from patent
g 7;
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIIiE.
TYPES 2N3037. 2N3038 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 6342B1, AUGUST 1963
FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS •
High Breakdown Voltage Combined With Very
•
DC
•
Electrically Similar to
•
Recommended
— Guaranteed From
Beta
for
Low Saturation
Voltage
100 na to 500 ma
2N2243
Complementary Use With 2 N 3039 and 2N3040
'mechanical data
„™.
>^
STSSS.-JSS ALL LEADS INSULATED
J\
-jj^TT'™'
....
r
i-vur-i-FSSr)
'absolute
maximum
ratings at 25° C
FI0H USE
'
temperature (unless otherwise noted)
free-air
Collector-Base Voltage Collector-Emitter Voltage (See
Note
2N3037
2NMM
120 v
lOOv
70 v
60 v
1)
7v ma -360mw-
7v
Emitter-Base Voltage
-500
Collector Current
25°C Free-Air Temperature (See Note 25"C Case Temperature (See Note 3)
Total Device Dissipation at (or below) Total Device Dissipation at (or below)
2)
'electrical characteristics at
- 65°C
Collector Cutoff Current
Iek>
Emitter Cutoff Current
l
E
1,
V|bk)£bo Emitter-Base Breakdown Vottage
E,
Forward Current
,
l
l
Transfer Ratio
1 v.
1,
Base-Emitter Voltage
1
1,
Collector-Emitter Saturation Voltage
1
li
NOTES:
whaa
fl» bra-amittir diada
Thii volua oppliai
2.
Dtrolt llnaarly !• 175°C frw-ilr lamparitura it Iks roll af 2.4
3.
Oaratt llniotly la
4.
Thaja paromatare nusf ba maasurad wing pwlta fadMiquas.
•Indium JEDEC
17S°C com tmptntgn
at
Hn
UNIT
120
100
y
70
60
V
7
7
V na
Is
10
10
IM
l
10
10
na
30
15
l
30
l
40
60 120
20
to
240
40
l
25
l
0.6
0.8
0.6
0.75
1.1
0.75
50 0.1
V
1.1
V
l
0.2
0.2
V
l
0.35
0.35
Y
apan-eircultad.
I.
il
2N3038
10
1,
VcE(»t>
200°C
10
,
VK
-
+
MAX MIN MAX
MIN
= 100 fia. = = (See Note 4) lc = 30 ma. = 100 pa. c = E Vcs = 60 v. U = =0, IA = 150°C Vc. = 60 v. V = 5v, c = V a = 10v, lc = 100/xa Vet = 10 v. c = 10 ma, (See Note 4) V« = 10v, c = ISO ma, (See Note 4) lc = 500 ma (See Note 4) Vce = 10v, Vce = c = 150 ma, (See Note 4) = ma, c = 10 ma = 15 ma. lc = 150ma,(SeeNote4) = ma. c = 10 ma = 15 ma. c = 150 ma, (See Note 4) lc
V|h))ceo Collector-Emitter Breakdown Voltage
Ick>
2N3037
TEST CONDITIONS
V[br)cbo Collector-Base Breakdown Voltage
Static
to
25°C free-air temperature (unless otherwise noted)
PARAMETER
bfi
l.Ow
-
.
Storage Temperature Range
rata af (.67
PW
mw/C".
mw/C*.
= 300
/iiac.
Duty Cycla
<
2%.
raglitarad data
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
4-179
TYPES 2N3037. 2N3038 N-P-N SILICON TRANSISTORS
25°C
'electrical characteristics at
temperature
free-air
2N3038
2N3037 TEST CONDITIONS
PARAMETER Vce
=
10 v, lc
=
10 ma,
f
=
1
kc
90
700
180
Vce
=
10 v, lc
=
10 ma,
f
=
1
kc
30
140
60
»ce
=
I0v, lc
=
10ma,
f
=
1
kc
Vce
=
10 v, lc
=
10 ma,
f
= M mc
V Ci
=
10v,
f
=
lmc
V EI
=
0.5 v, lc
f
=
1
mc
Small-Signal Common-Emitter
hi,
Input Impedance tit.
Small-Signal Common-Emitter
ho,
Small-Signal Common-Emitter
Forward Current Transfer Ratio
Output Admittance |hf,|
Small-Signal Common-Emitter
Ci,
Common-Base
Forward Current Transfer Ratio Open-Circuit
Output Capacitance
Common-Base
C ib
Open-Circuit
Input Capacitance
MAX MIN MAX
MIN
Ie
= 0, = 0,
UNIT ohm
1500
300
200
fuiiu
15
15
ff
85
85
V<
100
2.5
2.5
'switching characteristics at 25°C free-air temperature
2N3038
2N3037 TEST CONDITIONS!
PARAMETER Dslajr
Id
Time
Time
Rise
t.
Storage Time Fall
tf
fVoltagt Mid currant
wIms
MAX MIN MAX 30
30
nsec
150
150
nsec
1
1
(See Figure 1)
200
200
c
li|2|
ll,
Time
shown ara nominal; uoct valuts vary
UNIT
= ISO ma, !(!) = 15 mo = - 15 mo = 40n ¥«,„„, = -2.75v, I
t.
MIN
slightly with transistor
fJ.SK
nsec
paromattn.
'PARAMETER MEASUREMENT INFORMATION
O
+6.2 v 40
A -O OUTPUT
INPUT
-^s-© (See Notes a and b)
VOLTAGE WAVEFORMS
TEST CIRCUIT
FIOURI MOTES:
a.
The Input •enloni kit the fallowlal dwaciiflitics:
b.
Wenfamn an
•Indicates
JEDEC
1
-SWITCHING TIMIS
l,^
~~A ««i out
l^fiTZ^'""
maximum
'absolute
ratings at
25*C
free-air
temperature
(unless-
otherwise noted) 1NSM0
2N303V
— 50 v -35v
Collector-Base Voltage
Note
Collector-Emitter Voltage (See
1)
-40v -30v
-5v
-5v
Emitter-Base Voltage Collector Current Total Device Dissipation at (or below) Total Device Dissipation at (or below)
?5°C Free-Air Temperature (See Note 25°C Case Temperature (See Note 3)
2) .
~4-
--500 ma -
- <
PW
500
nsec.
4 nsec, l in
Duly Cycle
^
:< t%.
100 Ml, Cjn
^
12
pf.
registered data
PRINTED IN
TexasINCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 7S222
Tl
cannot assume any responsibility
or
represenr
that
they ore
free
for
any
from potent
circuits
U.S.A.
37
shown
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N3043 THRU 2N3048 DUAL N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 674208, AUGUST 1963-REVISED APRIL 1967
DESIGNED FOR DIFFERENTIAL AMPLIFIERS AND HIGH-GAIN LOW-NOISE AUDIO AMPLIFIERS
•
Electrically Similar to
•
Individual Triodes are Electrically Similar to 2N929,
•
Popular TO-89 Flatpack Facilitates High-Density Packaging
• Welded
2N2639-2N2644
Series
2N930
Metal Construction
mechanical data
I
"H"
UAO
SPACING MCASUtfD AT PACKAOi
B
—0.002
'
_
« UA08
r
•FALLS WITHIN TO-W DIMENSIONS
0-3*0
All LEADS INSULATED FIOM
0.3S0
USE
If)
0.004*0.00!
maximum
"absolute
noted) ratings at 25°C free-air temperature (unless otherwise
EACH
TOTAL
TRIODE
DEVICE
45v
Collector-Base Voltage Collector-Emitter Voltage (See
Note
45y
1)
5v
Emitter-Base Voltage
30 ma
Continuous Collector Current Continuous Dissipation at (or below) 25"C
Free-Air Temperature (See Note 2)
below) 25°C Case Temperature (See Note 3)
Continuous Dissipation at (or
1.
TM> nloo ooplln
J. Bortf. Ilmorir to
•Micotos JEDEC
ok* *»
b
bojo-ooriltor olooo
175*C frOMlr lomnrrt.il ot 17S*C
wo
l«»ofrtoro
250
mw w
0.7
350 mw 1.4
w
-65°C to -f200°C 910®C
Lead Temperature K» Inch from Case for 10 Seconds
1. Doroto linHrtr to
.
...
Storage Temperature Range
NOTES:
.
ooonlreoltool.
too rrto .1 1.47
rt too rot. ot 4.S7
mw/C«
«/(.*
for
UK* IrMt
tor ooca trio*,
mt 1.M
mi
».M
prw/t* be
mi/f
total
lor total
toko.
Mio.
ro|litorod oolo
Instruments Texas INCORPORATED POST OFFICE BOX SO 12
e
DALLAS. TEXAS 75222
4-183
TYPES 2N3043 THRU 2N3048 DUAL N-P-N SILICON TRANSISTORS
25*C free-air temperature (unless otherwise noted)
electrical characteristics at
'Individual trlodt characteristic! (see not* 4)
PArtAMITIR Collector-Emitter Breakdown „ v l«l«o
= 10 ma, = 10 jua, Vce = 45 Vci = 4Sv, V„ = 4 Vci = 5 Vei = 5 Vet = 5 = 0.5 ma, le
vol,,,,.
V|M|iio Emitter-Base Breakdown Voltage
li
y,
Ick>
Collector Cutoff Currant
Emlttor Cutoff Currant
liio
Static
h
"
v,
forward Currant
Transfer Rath)
VK
Baso-Emltter Voltage
„ y.„ c,, '* ,,
Collector-Emitter Saturation
*
Input Impedance
*
Forward Current Transfer
°*
i
n
Forward Currant Transfer Ratio
C^
=
150°C
y,
l
10
10
na
10
10
li*
10
na
10
100
300
50
0.0
0.6
130
1
0.6
200
45 0.8
y
1
y
1
lc
=
1
ma,
f
=
1
kc
3.2
19
1.6
13
Vci
=
5 y,
l
c
=
1
mo,
f
=
1
kc
130
600
65
400
Vet
=
5 y,
l
c
=
1
ma,
f
=
1
kc
Vet
=
5 y,
l
c
=
1
ma,
f
=
20 Mc
Vci
=5
f
=
1
Common-Base Open-Circuit Output Capacitance
y
5 y,
Small-Signal Common-Emitter
i
y
5
l
ftafio
Output Admittance
45
5
=
Small-Signal Common-Emitter
1,
TA
y,
It
= 0,
UNIT
45
1,
l,
2NS046 2N3047 2NI04I MAX MIN
Vet
Small-Signal Common-Emitter
h
See Note 5
l
l
li
Voltage
= 0, e = = = 0, e = c = 10 fia c = ma lc = 10 mo lc = 10 ma U
y,
y,
Small-Signal Common-Emitter
h|
2NS04J 2N3044 2NS04S MIN MAX
TIST CONDITIONS
100
70
kO
funho
1.5
1.5
Mc
8
8
Pf
*triode motching characteristics
PARAMETER h
m
hpti iu 1
m
v
1
"f
TEST
Static Forward-Current-
Vce
Gain Balance Ratio
See Note 6
Base-Emitter-Voltage-
= 5y, = 5y, Taiii = 2S°C Vet = 5 T*,,, = 25°C,
Differential
)
5y,
l
c
=
ATa [Differential Change
VCE
lc
Vce
lc
= 10jua = 10/ia, = - 5S°C
Ta, 2 , lc
y,
With Temperature
=
UNIT
1
0.8
1
5
10
my
0.8
1.6
my
1
2
mv
lOfta,
=
TA |,|
2N3044 2N3047 MAX
MIN
10/*o, 0.9
Base-Emitter-Voltage-
A (V re - V M2 ,
|
=
2N3043 2N3046 MIN MAX
CONDITIONS
125°C
operating characteristics at 23"C free-air temperature 'individual triode characteristics (see note 4)
PARAMETER NF
NOTES:
Vct
4.
Tin luminals of tin triad* not undor
5.
Ttls paranoial
«.
Tbo lower of
7.
•Indltotas
Hu two
Average Nolso Figaro
JEDEC
on opM-drculM
toil
bo moasorod mini nilsa tochniqiNS. h
re rndingt
li
mmnt
=
=
5v, l c Noise Bandwidth
Average Noise Figure
mnt
ALL TYPES
TEST CONDITIONS
ii III
token ol *
H1
PW
for tho
10/ta, Re
=
15.7
kc.
Dorr Cyclo
MAX
UNIT
10kft,
See Note
mootoromtiH of tkt»
= 300' /OK,
=
MIN 7
5
db
characteristic!.
<
2%.
.
on omoiffier with lewfreooenqr-reioeilie down 1 db ot 10 cos.
registered dole
PRINTED IN
4-184
USA
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TBXAS 78221
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE:
TYPES 2N3049. 2N3050, 2N30S1
DUAL P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 674230, AUGUST 1963-REVISED APRIL 1967
DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING
•
Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors
•
Popular TO-89 Flatpack Facilitatts High-Density Packaging
• Welded Metal
Construction
mechanical data
•FALLS WITHIN 10-19 DIMENSIONS
HI
maximum
'absolute
25°C
ratings at
free-air
LEADS INSULATED FIOM CASE
temperature (unless otherwise noted) EACH TRIODE
Collector-Base Voltage Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage Continuous Collector Current
Continuous Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Dissipation at (or below) 25°C Case Temperature (See Note 3) Storage Temperature Range Lead Temperature Kt Inch from Case for 10 Seconds .
electrical characteristics at
25°C
.
.
.
...
-25 v -20 v -5 v —100 ma 250 mw
w
0.7
-65°C
to
TOTAL device
I mw w
350
1.4
+ 200*C 230"C
temperature (unless otherwise noted)
free-air
'individual triode characteristics (see note 4)
PARAMETER V|K|CEO
Collector-Emitter
Iroakdown Vottoae
lc
=
= — mo. Va = -5»,
= U = 0, lc = lc = -10/ca lc = -100/M lc = — mo lc = -10 mo, lc = — 10 ma lc = — 10 ma lc = — 10 mo lc = — ma.
Va=-5»,
lc
=—
lc
=-
lc
=-
= -25v, Vci = -«v, V» = -5v, V« = -Sv, Va = -5», V c6 = -5y, Vci
ICK>
Collector Cutoff Currant
Ueo
Emitter Cutoff Current
Static
lift
Forward Current Transfer lario
¥ci=-5v, Vct
V.
lase-Emitter Voltage
»CI|..t|
Collector-Emitter Saturation Voltage
Ii
Small-Si^nol Common-Emitter hi.
Input Impedance
K
Small-Signal Common-Emitter
Forward Current Transfer lotio
M U, NOTES:
1. This 2.
5.
•Indicates
Forword Current Transfer Ratio
Output
value applies
11
nearly to
Vc.
Capodtnn
when the Base-eMiiiw diode 175°C
ti
= -5»,
=
-5»,
l
E
=
TA
150'C
20
1
1
1
ma,
Sea Note 5
175°C case temperature
-10 -10 -10
no
y
pa nc
120
30
120
30
120
30
120
-0.7
-0.» -0.2
f
=
lkc
0.75
4.5
f
=
Ike
30
130
lkc
1
ma,
f
1
ma,
f
=
20mc
f
=
1Mc
SO
V y
kn
/imho
3
»f
open-circuited.
at the rate of 4.67
test
UNIT
20
=
U=0,
MAX
-20
Hot. 5
mw/C° for each triode and 133 mw/C° mw/C° for each triode and 9.33 mw/C° for
free-air temperature at the rate of 1.67
The terminals of the triode not under
are open-circuited for the
These parameters must be measured using pulse technique..
JEDEC
mo.
V«=-5v,
Common-Bast Open-Circuit
Derate linearly te
3. Derate 4.
Small-Signal Common-Emirrer
1 1
¥ci
Output Admittance
—
li
Smalt-Signal Comnwn-Emitter
h.
= -1».
*=
MIN
TEST CONDITIONS -10 mo li=0. So.
PW
—
measurement of these
300 usee, Duty Cycle
<
for total device. total
device.
characteristics.
2%.
registered data
Instruments Texas INCORPORATED POST OFFICE BOX 5012
OALUAS, TEXAS 75322
4-185
,
TYPES 2N3049, 2N305Q. 2N3051 DUAL P-N-P SILICON TRANSISTORS
25°C free-air temperature (unless otherwise noted)
electrical characteristics at
*triode matching characteristics
PARAMETER
=-5v.
hfU_
Static-forward-Current-
Vce
h re2
Gain Balance Ratio
See Note 6
l»»— VbezI
Base-Emitter- Voltage -
= -S»,. = -Sv, = 25 T V C = -5v, TA| „ = 25°C,
A
(Vn
— VK2 ATa )
1
Base-Emitter-Voltage-
Change
The lower of the two
a:
h^
readings
0.9
0.8
1
= -100/xa c = -100/xa, = _ 55°C T lc = -100uo, T*,,, = 12S*C
UNIT
1
5
10
mv
0.8
1.6
mv
1
2
mv
AtlJ
e
With Temperature
-100/to,
2N3050 MIN MAX
l
C,
A(1 ,
'Differential
=
c
Ic
V CE
1
NOTE
I
Vce
Differential
|
2N3049 MIN MAX
TEST CONDITIONS
taken as kpr,,.
ii
operating characteristics at 25°C free-air temperature *
individual triad* characteristics (see note 4)
ALL TYPES
PARAMETER
TEST CONDITIONS
MIN NF
Vce = - 5
Average Noise Figure
NOTE 7: Average
Hois* Figure
It
mtasurad
in
UNIT
MAX
kO, lc = - 100 /to, Xs = Noise Bandwidth = 15.7 kc, See Note 7 v,
1
db
6
an amplifier with low-froBUoncy-response down 3 db at 10 cos.
switching characteristics at 25°C free-air temperature 'individual triode characteristics (see note 4)
PARAMETER to
Delay Time
tp
Rise
Ic
Time
t,
Storage Time
If
Fall
2N3051
TEST CONDITIONS?
MIN
= - 10 ma, = - 2.5 ma, low = + Uv,»t = 300n. lift)
See Figure
15
nsoc nssc
120
nsec
30
nsec
1
TVoltago and current values shown are nominal; exact valuts vary slightly with
transistor
UNIT
20
ma
2
V.e(„«i=
Time
MAX
paramours.
'PARAMETER MEASUREMENT INFORMATION
9
-3.lv
+ 1.20v
Rl-300.11
-3.30v
n
r
OUTPUT
O—
—i^—ii temperature at the rat. of 57.1 mW/°C. Derat. the 5-w.tt (JEDEC 4. Derate the 10-w.tt rating linearly to 200°C case mWrC. rating linearly to 200°C case temperature at the rata of 28.6 pulse techniques. V, - 30O lit. duty cycle < 2%. S Thaw parameters must be measured using the exception of lead length. The JEDEC registered outline for this device Is TO-5. TO-39 falls within TO-6 with effect at the time of publication. •JEDEC registered data. This data sheet contains all applicable registered deta in registered values which ere also shown. CH|p N13 tThese values are guaranteed by Texas Instruments In addition to the JEDEC
NOTES:
IM«n
1
W
USK
PRINTED IN
U.S.A.
Instruments Texas INCORPORATED MAKE CHANCES AT ANY TIME TEXAS INSTRUMENTS RESERVES THE RIGHT TO PRODUCT POSSIBLE. TO IMPROVE OESICN AND TO SUPPLY THE BEST IN
ORDER
POST OFFICB BOX B012
•
DALLAS. TBXA« 7B222
4-189
"
TYPE 2N31H N-P -N SILICON TRANSISTOR BULLETIN NO. DL-S 737397, MARCH 1965-REVISED MARCH 1973
DESIGNED FOR USE AS HIGH VOLTAGE VHF AMPLIFIER
•
Featuring 150-Veh
V(U)CE0
mechanical data THE COLLECTOR iHss
IS IN
ELECTRICAL CONTACT WITH THE CASE
•
ALL DIMENSIONS ARE IN
INCHES
UNLESS OTHERWISE SPECIFIED lUTlINf IN
..OPTIONAL
L—
U.nnu PLANE
ALL JEDEC TO 39 DIMENSIONS AND NOTES ARE APPLICABLE * absolute
maximum
ratings at 25°C free-air temperature (unless otherwise noted)
Collector-Base Voltage Collector-Emitter Voltage (See Note Emitter-Base Voltage Collector Current
l
150v* 150v*
1)
5v"
Continuous Device Dissipation at (or below) 25*C Free-Air Temperature (See Note 2)
....
Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
.
Storage Temperature Range Lead Temperature J
200 ma
.
2.
4-190
TexasINCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
(JEDEC
registered)
USES CHIP N15
TYPE 2N3H4 TRANSISTOR N-P-N SILICON
*«Nwtrical charactorictks
crt
25*C frM-air tempm-atur*
Y« =
$imA*S)|mI Commoii-EinRter hi.
toward Curat Tramhr lofio 5mol-fl|nal
K\
MIN
TEH CONDITIONS
PARAMETER
Cwmimi tmlWw
= Ike
I
c
=
Vct=10v,
l
c
= 30ma,
f-MMc
Vct=Mv,
U
= 0,
f=140ke
5v,
1
n»,
f
MAX
UNIT
25
2
Forward Cwntrt Tranter Ratio
ComntM-ta* Optn-Oratt
U.
9
*
Ovtpot GoBOcitaRtt
ComMK-lm* Opw-OroH Qk.
¥b
Input Capodtaac*
MrMofMI-SlfMl
MM
=
V« =
CmmM-EiiiHtar Input hnpodaau
0.5y.
|
c
= 0,
f
=
140 ke
80
V
10y.
l
c
=
f
=
100Mc
30
ft
10 mo,
I
THERMAL INFORMATION CASE TEMfEHAIUM
FME-An TEMTSlATUItE DISSIPATION
DISSIPATION DERATING CURVE
DUATING CWVE 12
4
2
l»
TA
200
150
— Fr—-AU T—|W
Btwrt
— *C
IX
250 Tc
— Com T—y
150 irotura
200
— "C
290
•Mia* JOK nfMm< Mo
PRINTED IN
USA.
Instruments Texas INCORPORATED IKMWS
THE RIGHT TO MAKE CHANGES »T »NY TIME
IEMS INSTWWENTS AND IN OMM TO IMmOVE DESIGN
TO SUPP1V THE BEST PI0DUCT POSSIIIE.
POST OFFICE BOX S012
•
DALLAS. TEXAS 7S22S
4-191
TYPE 2N3117 N-P-N SILICON TRANSISTOR BULLETIN NO. DL-S 678878, JANUARY 1967
DESIGNED FOR USE IN LOW-LEVEL, LOW-NOISE
AMPLIFIERS • Guaranteed Low-Noise Characteristics at 10 Hz, TOO Hz,
1
kHz and TO kHz
• High Guaranteed h at K l
=
c
10 /iA...250 Minimum
'mechanical data
**m THE COLLECTOR
1
AIL
an» O.10S $m WA DM
in
raw
IS IN
ELECTRICAL
CONTACT WITH THE CASE
DWUNUONt AH
mam
UNUSt OTHRWIM
ALL JEDEC TO-18 DIMENSIONS AMD HOTES ARE APPLICABLE
'absolute
maximum
ratings at 25°C free-air temperature (unlets otherwise noted)
«y
Collector-Base Voltage Collector-Emitter Voltage (See
Note
1)
!
.
!
!
60 V
Emitter-Base Voltage
Continuous Collector Current
50
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25»C Case Temperature (See Note 3) Continuous Device Dissipation at 100°C Case Temperature
Storage Temperature Range Lead Temperature X« Inch from Case for 60 Seconds
NOTES.
nil* ooplln
1.
Thli
1.
Doroto llMQriy to
I. Doroto llMorly to
•Indliotoi
whw M0*C
ll» bolo-omtltK diodi fr..-alr
M0°C can
tmpHotara
li
.
.
.
.
^y mA
W W 0.68 W 0.36 1.2
.^c f0 200°C .
.
.
300*C
opMKlrailUd.
it Ih. rati of i.Oi
tomaorataro ot Hio rati of
mW/dog.
LIS mW/dig.
JEDEC nolil.rod doll
USES CHIP N11
1-192
TexasINCORPORATED Instruments POIT OFFICB BOX SOU
•
DALLAS. TIXA» 7gU2
TYPE 2N3117 N-P-N SILICON TRANSISTOR
'electrical characteristics at
2S*C frM-alr temperature (unlets otherwise noted)
PARAMETER CollKtsr-lQM Breakdown VoHoat
V(«|ck>
Coltoctor-Emtttar
"(»JUO
Emitttr-Rast Breakdown Vollogt
Breakdown Vortojt
= c =
= = 0, lc = = = 0, lc = lc = ljuA lc = IOjuA
Ic
10mA,
1.
l
10 mA,
1,
Is=10mA,
Cottctor Cutoff Current
Iek>
Emilttr Cutoff Current
Sm Nott 4
Static
Forward Current Transfer Ratio
v«
Bast-Emrtttr
Vcttetl
Colkctor-Emrrtar Saturation
VoHogt VsRagt
SmoH-Sgnal Common-Emitttf hi.
Input Impodanct Snwll-Sianol
h«.
V« =
UNIT V
M
V
It
h*
MAX
60
V
i
= 45 V, l, TA = 150*C Vci = 45 ¥, V« = 5 V, V e! = 5V, ¥ct = 5V, lc= 100 /M ¥ct = 5¥. lc= 1mA Ve. = 5¥, Ic = 10mA, TA = -55*C »c. = 5V, lc = 100 /iA ¥ce = S¥, lc = lmA 1, = 0.1 mA, Vet
IctO
MIN
CONDITIONS
TEST
V|MOO
10
nA
10
/**
10
nA
100
250
500
300 400 50
07
V
0.35
V
10
24
400
900
kfl
5¥,
Common-EmHrer
Forward Current Transrer (alio lc
SmoK-Slenal Comnnn-Emitttr
h™
=
1
mA,
RxlO"4
Revtrst Vottag* Transfer Ratio f
=
kHz
1
Smalt-Siflnal Corntnon-EmHttr
R»
40
/undo
Output AdmHtonct
SmaR-Sgnal Common-f. mitttr
N
Forward Current Transfer lotto
Vc«
=
5V,
lc
=
0.5
Vci
=
5V,
1,
=
0,
V„
=
0.5 ¥,
lc
Common-tot Opon-arcult
U,
Output CopocitaiKt
Common-Bast Optn-Orcult
Cb.
Input Copodtanct
=
mA,
0,
f
=
30 MHz
f
=
140 kHz
4.5
I*
f
=
140 kHz
6
"
2
'operating characteristic* at 2S"C free-air temperature
=
¥ct
=
f
Avtragt Ntto Figure
NF
=
NOTE
4i
Ttli
•Mutt
ftrnti awl
JEIK nfrHni
U mfuni whi| H" ""Wo"*
l
l
M0
30/«A,
R»=10kn,
l
100 Hz,
=
=
= 2 Hz e = J0/aA,R, = 10kn, Hoist Bandwidth = 20 Hz lc = 5 pk, R» = 50 kfl, Nobt Bandwidth = 200 Hz lc = S/iA, R, = 50kn,
1
p
c
MAX
UNIT
15
dB
4
dB
1
dB
1
dB
Moot Bandwidth
10 Hz,
Vet = 5 V, = kHz, Vct = 5¥, f = 10kflz f
Spot Moist Rfure
5V,
V«=5V, f
HF
MIN
TEST CONDITIONS
PARAMETER
/a,
*My qrdt
^
1%.
Mt
PRINTED IN U.S.A.
Instruments Texas INCORPORATED MAKE CHANCES AT ANY TIME TEXAS INSTRUMIKTS KSEHVES THE HIGH! TO SUPPLY THE BEST PRODUCT POSSIBLE. IN ORDER TO IMW0VE DESIGN AND TO
POST OFFICE BOX 5012
•
DALLAS. TSXAS 75228
4-193
TYPES 2N3244, 2N3245. 2N3467, 2N3468 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7310676, MAY 1968-REVISED MARCH 1973
DESIGNED FOR HIGH-SPEED CORE-DRIVER APPLICATIONS • High Dissipation Capability... 10 Watts at 25°C Case Temperature • High
• High • High
V(M)CEO
V Min (2N3245, 2N3468) Speed... 60 ns Max t s at 500 mA (2N3467, 2N3468) Collector Current Rating ... 1 A ...50
mechanical data THE COLLECTOR
ELECTRICAL CONTACT WITH THE CASE
IS IN
ALL DIMENSIONS ARE IN
INCHES
UNLESS OTHERWISE SPECIFIED
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
absolute
maximum
ratings at 25°C free-air temperature (unless otherwise noted)
2N3245
-40*
-50*
-40*
-50*
V
Collector-Emitter Voltage (See Note 1)
-40*
-50*
^40*
-50*
V
Emitter-Bos* Voltage
-5*
-5*
-5*
-5*
V
Continuous Collector Current
-r
-1*
-1*
-1*
A
l*
1*
1*
1*
W
lot
10t
5*
5*
Continuous Device Dissipation at (or below) 25 °C Free-Air Temperature (See Note 2)
Continuous Device Dissipation at (or below) 25 °C Case Temperature (See Note 3)
-45
Storage Temperature Range
Lead Temperature
% Inch from Case
for
1.
2.
3.
2N3467
10 to
10
200*
10 Seconds
300*
Lead Temperature K< Inch from Case for 60 Seconds
NOTES:
2N3468
2N3244 Collector-Boss Voltags
UNIT
W •c
230*
•c
300*
•c
These values apply between O and 1 A collector current whan the base-emitter diode is open-circuited. Derate linearly to 200° C free-air temperature at the rete of 5.71 mW/°C. Derate the 10- watt Tl velue linearly to 200*0 case temperature et the rate of 57.1 mW/°C. Derate the 5-watt JEDEC value linearly to 200° C case temperature at the rate of 28.6 mW/°C.
*The JEDEC
"JEDEC
registered outline for these devices Is TO-5. TO-39 falls within TO-5 with the exception of lead length. registered data. This data sheet contains all applicable data in effect at the time of publication.
* These velues ere
guaranteed by Texas Instruments
in
addition to the
JEDEC
registered values
which are
also
shown.
USES CHIP P12
4*194
TexasINCORPORATED Instruments POST OFFICE BOX S012
•
DALLAS, TEXAS 7S222
TYPES 2H3244, 2N3245. 2N34S7, 2N34B3 P-N-P SILICON TRANSISTORS
25°C free-air temperature (unless otherwise noted)
'electrical characteristics at
Collector-Base
V|»)cbo Breakdown Voltage
c
=
-10
l
c
=
-10 mA,
l
E
l
Collector-Emitter
Weo
Breakdown Voltoje Emitter-Base
V|br|ek>
Breakdown Voltage
Collector Cutoff Current
Icbo
2N3244 2N3245 2N3467 2N3468 UNIT NUN MAX MINMAX MINMAX MINMAX
TEST CONDITIONS
PARAMETER
=
-10
j*A,
/iA,
l
=
E
1,
=
lc
=
l
Vci
l<
-50
-40
-50
V
-40
-50
-40
-50
V
-5
-5
-5
-5
See Note 4
0,
= -30 V, E = = 0, = -30 V, T A = 100°C = = -50 V, Vc. E Vce = -30V, V K = 3V Vce = -30 V, V« = 3 V V Ei = -4 V, c = lc = -150 mA Vce = -1 V, See lc = -500 mA Vce = -1 V, Note = = -750 -5 mA V, lc Vce 4 Vce = -5 V, c = -1 A 1, = -15mA, lc = -150 mA See = -50 mA, lc = -500 mA Note lc = -750 mA 1, = -75 mA, 4 = -100 mA, lc = -1 A 1, = -15mA, c = -150 mA See = -50 mA, lc = -500 mA Note 4 = -100 mA, lc = -1 A Vce = -10 V, lc = -50 mA, See Note 5
VC i
-40
-50
Collector Cutoff Current
lev
Base Cutoff Current
Iebo
Emitter Cutoff Current
Static
hK
Forward Current
Transfer Ratio
nA
80
80
120
120
nA
-30
150
30
Transition Frequency
Common-Base Open-Circuit
**°
Output Capacitance
Vci
=
-10
V,
l
VE.
=
-0.5
V,
lc
Common-Base Open-Circuit tibo
NOTES!
Input Capacitance
4. These parameters 5.
•Indicates
To obtain
JEDEC
l
T,
mint be measwed uilng pulse techniqaei.
the |h
fc
|
response with fieqeenc.
is
=
E
I
p
=
=
0,
0,
300
/is,
40
75
25
120
20
40
20
-1
-1
V
-0.8 -1.2
-0.8 -1.2
V
-2
-1.6
-1.6
V
-03
-0.35
-0.3
-0J5
V
-0.5
-0.6
-OS
-0.6
V
-1.2
-1
-1.2
V
-1.1
-1.1
-0.75 -1.5 -0.75 -1.5
-2
V
-1
MHz
150
175
150
175
f
=
100 kHz
25
25
25
25
PF
f
=
100 kHz
100
100
100
100
pf
duty cycle
extropoletod et the rate of
-t
<
2%.
dl per
octm
trout I
registered data
Instruments Texas INCORPORATED POST OFFICE BOX 5012
90
25
1,
fr
nA 25
40
35
50
l
Saturation Voltage
nA
-100
60
1,
»ce 100
kft, Cj n
<
7 pF.
PRIMED
4-198
Texas INCORPORATED Instruments POST OFFICE SOX 5012
•
DALLAS. TEXAS 75223
aHume any
Tt
cannot
or
represent
that
IN
USA
107(
retpoMibrlrty far onr rrrcvrt! shown
they are Iree
from
patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPlf THE BEST PRODUCT
POSSIBLE.
TYPES 2N3250. 2N3250A, 2N3251, 2N3251A P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 679650. MARCH 1967
AND AMPLIFIER APPLICATIONS
DESIGNED FOR LOW-POWER SATURATED-SWITCHING
• Low-Level h FE : 80 Min at 100 M A (2N3251 and 2N3251A)
'mechanical data
THE COLIECTOH
AU
am
0.230
a3W MA
IN
UNUH
0.17s
CMTAa
DIMINSIONS ARC
IS IN
ELECTIIUL
WITH THE CASE
MCHCS OTHiRWISC
OIA
ALL JEDEC TO-ll DIMENSIONS AND
NOTES AIE APPLICAILE
l-MITTM
'absolute
maximum
ratings at 25°C free-air temperature (unless otherwise noted)
Collector-Base Voltage
Note
Collector-Emitter Voltage (See
2N3250 2N3251 -50 V
2N3250A 2N3251A -60 V
-40V
-60V -5 V > mA
1)
-5 V
Emitter-Base Voltage
Continuous Collector Current S Continuous Device Dissipation at (or below) 25 C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) Storage Temperature Range Lead Temperature Hi Inch from Case for 60 Seconds .
'electrical characteristics at
TEST CONDITIONS
Breakdown Voltage
V(nt|cio
Collector-Base
V(Ht|CEO
Collector-Emitter
V|K)EK>
Emitter-Base Breakdown Voltage
'cEV
Collector Cutoff Current
Ittv
Base Cutoff Current
-<
-<
— —
0.36 1.2
W w
—y —y
>-
-65'C to 200°C 30o°c
Breakdown Voltage
raTT¥7T>:4r.Mi:t.-.f.>:4i.-ji:i:.T.>: Ij—
H'-t—
i '
l
Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
.
.
Storage Temperature Range
-65'C
Lead Temperature Xi Inch from Case for 60 Seconds
^
* electrical
characteristics at
PARAMim Vimcio
CoHtdof-unitttf
IntMtm
VottoM
lc
=
10 pa,
U
lc
=
TOma,
U=
It ==
10 pa,
Cental
=
Vc.
Vc» = Iciv
=
U
=
li
=
ton OiMf Cvntef
Iik>
Emitttr Cutoff Cutrant
Statk
"
Femora
Carrtnt
= =
*ct
Ttomfit «otlo
leio-Emltttr ViNott
li
=
l»= l,
ft
0,
f
Fnqwnqr
Comfitta-km
»=-*
l
5»,
=
c
le
Vci
Common-lou OpM-diall Vii
Input CtpactlaMt
S
V
75
r*
f
0.5
11a
P"
f
-0.S
SO
= lS0mo = iMm -la
Sn
SO
PNrti
10
4
25
-0.S
lit
SO
at
IS 90
IS
75
M
l
e
=
150iM
Sot
50nu,
l
c
=
5O0mt
Nttl
mm,
lc
=
l.t
1.1
I
e
=
la l50nw
4
15mo,
Sot
0.3
0.3S
l
0.S
0.1
l
1
= M», =
= 0,
l,
0.5v,
l
c
= 0,
=
100«e
f-
100 In
f
1
07
f* 1*
7S 0.S
l
Oatft-araiit
Outrwl Copatlroea
,
= + I00'C tA = + 100*C
TA
1, = 50™, c = 5Nma li = 100 mo, c ™ ta 4 = H», »ci e = S0mo, Sm Notts = t-10fJh »ei=W«, U 0,
Volftgo Trorurrioo
V »
0.S
tO»,
l,= lSmt,
' c «""
B
UNIT
40
0.S
0,
l»,
MAX
30 S
=
lc
MIN
*'
U=
«a=H, »ci
Vm
4
2NS2S*
MAX
75
l
1
.
+ 200*C*
M
Vct=40«, VC1 = M», V„=-4» Ve. = «», V« = -4w Vci = «v, »»=-4v V» = 4v, c =
CdlMw Cutoff Cwnaf
law
»•• Nott
0,
40»,
li
MIN
=
lc
= 40». Vci = *0«. Vci
Colltrttr Cutoff
iUtiii
TIST CONDITIONS
V|«»io EmMM-lMt laekinm VoRo|i
loo
to
300°C-
25°C free-air temperature (unless otherwise noted)
Wk> CohtthirloM Inafceim VoNoti
NOTES:
2N3253 75 v . 40 v*
4q v . 30 y« 5v•
1.3
IN
1
0.7
1.3
1.1
He
175 11
00
Rt
11
pf
to
P>
Thlt vtlua applies between and 1 a collaator currant whan tht beoe-emltter diode It open-circuited. Derate linearly to 200° C free-elr temperature tt tha rtta of 6.71 3. Oarttt tha 10-watt rating llnawlv to 200° C ctta temperature et the rtta of 57.1 mw/'C. Dtrttt tha E-wttt (JEDEC reglttered) rating linearly to 200° C cm* tamparttura at tha rata of 28.6 mw/°C. 4. These parameter! mutt be meatured utlng pulta taehnlqueo. PW - 300 utec, Duty Cycle < 2*. B. To obtain f-r, the |hf a reaponte with frequency It extrapolated at tha rete of -6 db per octave from f - 100 Mc to the frequency 1
.
nWc
2.
|
at
which
|h-f.|- 1.
The JEDEC raglttared outline for thete devlcei It TO-B. TO-39 f allt within TO-6 with tha exception of lead length. JEDEC reglttered deta. Thlt date theet contain! all applicable reglttered data in effect et the time of publication. tThli value
it
guaranteed by Texat Inttrumentt
In
addition to the
JEDEC
reglttered velue
which
TexasINCORPORATED Instruments FOST OFFICE BOX BOIS
•
DALLAS, TEXAS 78222
It
alto
thown.
USES CHIP N13
4-201
TYPES 2N3252, 2N3253 N-P-N SILICON TRANSISTORS
at 25°C froo-air temperature
* switching characteristics
TEST CONDITIONS!
PARAMETER
= 500 mo, = 59 ft, Ic = 500 mo, = 59 ft, Ic = 500 ma,
=
50 mo, ¥«,„«)
tn
Deloy Time
Ic
Inn
tr
Mm
It
See Figure
t,
Storage Time
t,
Fall
Time
Time
R,.
Total Control Charge
Or tVcltei'
«4
current
nlm
m
skem
MmlMl; uicl valwi wry
liio
=
-2
v,
1
= —lnn =
50 ma,
See Figure 2
U=
50 mo,
dlghtly wllb Irawlstor
2N3252
2N3253
MAX
MAX
15
15
30
35
nsec
40
40
nsec
30
30
nsec
5
5
neb
See Figure 3
UNIT nsec
Mramtm.
"PARAMETER MEASUREMENT INFORMATION
OUTPUT
OUTPUT
n W\r
200
INPUT
+10.7 v
INPUT
-2v
O
INPUT
»
TEST CIRCUIT
—
+11. 3v
J
.8.7 v
J»«r—
OUTPUT
90%-
•
VOLTAGE WAVEFORMS FIGURE
I
-
AND
DELAY
FIGURE 2
RISE TIMES
- STORAGE AND
+30 v
a
59
500 pf
o_
L
INPUT PUT
-O OUTPUT
-K-
INPUT
»(
i-v\A> 1800
90%
VOLTAGE WAVEFORMS
L)
FALL TIMES
+10v
I,
S 40 ns«c
10%
XCi-/
90%
VOLTAGE WAVEFORMS TEST CIRCUIT
NOTE:
Q T >«t, luty Cycle < Is
fell tleieii t,
PW
=
II /use, Bury Cycle
1%.
= J%.
eKllleKeps with the fsUeelee, cberecleristlcl:
t
r
<
1 esse;
l,„
>
1W
kfl,
Cln
i7
it.
rtglslirrt deta
PRINTED IN U.S.A. Tl
4-202
Instruments TexasINCORPORATED POST OFFICE BOX S012
•
DALLAS, TSXAS 78392
or
37;
cannot assume any responsibility' for any circuits shown represent
that
they are
free
from patent infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AN0 TO SUPPLY THE BEST PRODUCT POSSIItE.
TYPES 2N3329 THRU 2N3332 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BULLETIN NO. DL-S 644905, MARCH 1964
FOR SMALL-SIGNAL, LOW-NOISE APPLICATIONS • Active Elements Insulated from Case • High Input Impedance
(>
5 megohms at
1
kc)
*mechcmkal data
TIE MTIVE ELCMEHTS
ME
ElKTtlULLY IHSIUTa
FIMTRECUE
•US am I
All
l-«N
* absolute
maximum
ratings at
JEKC
I0-7J DIMENSIONS
AM MTES ME APrtlCUtE
25°C
temperature (unless otherwise noted)
free-air
Continuous Forward Gate Current Total Device Dissipation at (or below) 25°C Free-Air Temperature (See Note Storage Temperature Range 'electrical characteristics at
PARAMETER 6ate-Source Ireakdawn Voltags
'ess
Gate Cutoff Currant
v„
= io».
'gss
6ate Cutuff Currmt
V ss
=10v.
'moni
Zero-Gare-Voltage Drain Current
»GS
Gate-Sowce Cutoff Voltage Static Drain-Source Resistance
'DS
.
-65°C
to
25°C free-air temperature (unless otherwise noted) 2N3329 2N3330 2N3331 2N3332 TEST CONDITIONS! MIN MAX MIN MAX MIN MAX MIN MAX 20 20 20 20 VdS=« 6 = 10 /u,
V(«".)6SS
I
.-10 1)
= -io». v DS = -is», D = -100 pa.
v DS
I
V ds
=0
0.01
= = 150-C v6s = D = -10 »ss =
0.01
0.01
0.01
ma
0.3
w
+200°C
UNIT »
in
o.
»ds
10
10
TA
-1
»
-J
fio
1
«
-2
10
-5
-t
-15
s
<
1
1000
000
400
0.2
0.2
0.2
-1
10
«•
-i
M
<
¥
ohm
Small-Signal Common-Source Irul
Input Admittance
0.2
/unfea
2200
/same
0.1
0.1
uiufco
100
to
anna
Small-Signal Common-Source
Iv
Forward Transfer Admittance Small-Signal Common-Source
lr„l
= -10 = Ike
V„s f
«.
l
D
— See Note
1000
2000
1500
3000
2000
4000
1000
2,
0.1
Reverse Transfer Admittance
0.1
Small-Signal Common-Source
lr.1
W
V DS
Forward Transfer Admittance
f
=
V DS
Common-Source Short-Circuit ti,.
Input Capacitance
f
= -10
D — See Dole
».
l
».
V SS
10 Mc
= -10
= IMc
=
2,
mo
1150
NOTE
1:
NOTE
2-.
fTho
f
=
f
=
1
kc,
Spot Noise Figure
I
D
=
fourth lead (case)
'Indicates
10 tps,
Derate linearly fo 175*C freo-air temperature at the rate of 2
JEDEC
is
«s
=
1
«s
=
10
2N3329
2N3330
2N3331
2N3332
—2 mo
—5 ma
—1 ma
all
MO
umno
20
20
20
»
»t
I
3
4
1
dk
5
ctb
»Q
mw/C*.
—1 ma
connected to the source for
no
IIOO
1 »,
"operating characteristics at 25°C free-air temperature -' ""• Vds = -s »• 'd = NF
40
20
Output Admittance Small-Signal Common-Source
measurements.
registered data.
USES CHIP JP71 PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER 10 IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
POST OFFICE BOX 5012
•
DALLAS. TEXAS 7B222
4-203
TYPES 2N3347 THRU 2N3352 DUAL P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7211681, MARCH 1972
TWO P-N-P TRANSISTORS IN ONE PACKAGE •
Each Triode Electrically Similar to 2N2604 and 2N2605 Transistors
•
Recommended
•
Designed for Complementary Use with
for Low-Noise, High-Gain Differential Amplifiers
2N2639 through 2N2644 Dual N-P-N
'mechanical data
Transistors
.
ALL LEADS INSULATED FROM CASE Dimensions without tolerance designete true position. Leeds hawing maximum dlamatar (0.019") maasurad in gaging plana 0.064" +0.001" -0.000" below tha saating plana of tha davica hall ba within 0.007" of thair trua position ralativa to a maximum width tab. 1.
2. 3. 6. 6. 7.
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
'absolute
maximum
COLLECTOR BASE 1 EMITTER EMITTER BASE 2
1
1
2
COLLECTOR
2
ratings at 25° C free-air temperature (unless otherwise noted)
TOTAL EACH TRIODE DEVICE
~60V -45 V ~" 6 v
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage
-30 mA
Continuous Collector Current
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
...
W
0.6W
0.6 1
W
,2W
~65 C to 200 C •—230 C —
Storage Temperature Range
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
0.3
This value applias whan tha basa-amlttar dioda Is opsn-clrcultad. trloda and 4 mW/ C for total device. Darata linearly to 1 76°C fraa-alr temparatura at tha rataa of 2 mW/°C for each for each triode and 8 mW/ C for total device. 3. Derate linearly to 176°C case temperature at tha rates of 4 mW/°C 1.
2
•JEDEC
registered data. This data sheet contelns
all
applicable registered data In effect at the time of publication.
USES CHIP P19
4-204
Instruments Texas INCORPORATED POST OFFICE SOX
SOI 2
>
DALLAS. TIXAS 78222
TYPES 2N3347 THRU 2N3352 DUAL P-N-P SILICON TRANSISTORS 25° C free-air temperature (unless otherwise noted)
'electrical characteristics at
individual triode characteristics (tee note 4)
PARAMETER V(br)CBO V(8R)CEO v (BR)EBO
Collector-Base
Breakdown Voltage
Collector-Emitter
I
C =_ 10M A,
lC=-10mA,
Breakdown Voltage
l£ =
IB " 0,
See Note 5
Vbe
Base-Emitter Voltage
|£--10mA, c = o V C B " -45 V. E = TA V C B - -45 V. 'E " 0. V EB = -6 V. ic-o V C £ - -5 V, C --10uA V C £ = -5 V. lc - -1 mA V CE - -5 V, IC--10mA
VcE(sat)
Collector-Emitter Saturation Voltage
lB =
h; e
Small-Signal
Common-Emitter Input Impedance
Small-Signal
Common-Emitter
Emitter-Base Breakdown Voltage
MIN -60 -45 -6
Collector Cutoff Current
'EBO
Emitter Cutoff Current
hpE
Static
-60 -45
nfa
-6
hoe .
Small-Signal
Common-Emitter Output Admittance
Small-Signal
Common-Emitter
Vce
Forward Current Transfer Ratio
Cobo
Common-Base Open-Circuit Output Capacitance
Cjoo
Common-Base Open-Circuit Input Capacitance
l
-
-
-5 V.
40
300 100 150
c --10mA
-5
V,
VCB -
-5 V. V EB --05V
IC«-1 mA, f=1 kHz
lc - -1
mA,
f
- 30
l
E » 0,
f
-
1
l
c-
f
-
1
0,
V -10 -10 -2
60 -0.9
-0.9 -0.5
60
MHz
nA HA nA
300
-0.5
V V
3.7
20
600 150
600
100
100 umho
20
1.5
V CE
Forward Current Transfer Ratio
-0.5 mA,
V V
-10 -10 -2
- 150°C
l
Forward Current Transfer Ratio
UNIT
MAX MIN MAX
l
'CBO
2N3360 2N3351 2N3362
2N3347 2N3348 2N3349
TEST CONDITIONS
8
2
MHz MHz
ktt
8
2
6
6
pF
8
8
pF
triode matching characteristics
2N3347 2N3360
TEST CONDITIONS
PARAMETER
MIN hpEl hp£2
Static Forward-Current-
VCE--5V,
Gain Balance Ratio
See Note 6
I^BEI— v BE2l
Base-Emitter-Voltage Differential
VCE--6V. VCE--5V,
Differential
c --10mA,
l
c --10uA
0.9
C '-10uA, T A (1)-25°C, TA(2 )--55°C
Base-Emitter-Voltage-
|a(Vbei-VbE2>ATaI
I
Change
VCE--5V,
with Temperature
2N3348 2N3361
2N3349 2N3362
UNIT
MAX MIN MAX MIN MAX 1
0.8
1
0.6
1
5
10
20
0.8
1.6
3.2
2
4
mV
l
l
mV
C --10»iA,
1
T A(1) -25°C, T A12 )"125°C
'operating characteristics at 25° C free-air temperature individual triode characteristics (see note 4)
ALL TYPES
TEST CONDITIONS
PARAMETER
UNIT
MAX F
V CE
Average Noise Figure
The terminals of the triode not under
5.
This parameter must be measured using pulse techniques. t
7.
-5 V,
lc -
-10 uA, Rq - 10
ktJ,
4
•JEOEC registered
dB
See Note 7
open -circuited for the measurement of these characteristics. w = 300 M*. duty cycle < 2%. The lower of the two hpE readings is taken as hpt^. Average Noise Figure Is measured in an amplifier with response down 3 dB at 10 Hz and 10 kHz and of 6 dB /octave.
4.
6.
-
Noise Bandwidth - 15.7 kHz,
test are
a high-frequency roll off
data
PRINTED IN U.S.A.
Instruments TexasINCORPORATED TEXAS INSTRUMENTS RESERVES THE SIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE 8EST PRODUCT POSSIBLE.
POST OFFICE BOX SO 12
•
DALLAS. TEXAS 75223
4-205
TYPES A5T3391. A5T3391A, A5T3392. A8T3391. A8T3391A, A8T3392 A7T3392, A7T3391A, A7T3391. N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S
731 1931,
MARCH
1973
SILECT t TRANSISTORS* • •
For Small-Signal Amplifier Applications
Rugged One-Piece Construction with In-Line Leads or Standard TO- 18 100-mil Pin-Circle Configuration
•
A7T3391, A7T3391A, and A7T3392 are 2N3391 A, 2N3392 (TO-98 Package)
Plug-In Replacements for
2N3391,
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C, Method 106B. The transistors are insensitive to light. A5T3391, A5T3391 A. A5T3392 t -
iMma
3 LEADS
NOTES
A. Lead diameter B. Leads having
is not controlled in this area. maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.054 below the seating plane of the device relative to a maximum-diameter package. C. All dimensions are in inches.
A7T3391, A7T3391A, A7T3392, A8T3391, A8T3391 A, A8T3392
NOTES:
A. Lead diameter is not controlled B. All dimensions are in inches.
absolute
Emitter Collector Base
A8T3391, A8T3391A, A8T3392
Emitter Base
Collector
ratings at 25° C free-air temperature (unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
1
.
2.
25 V 25 V 5V 100 mA 625 mW -65°Cto 150°C 260°C
This value applies when the base-emitter diode is open-circuited. Derate linearly to 150° C at the rate of 5 mW/°C.
* Trademark of
Texas Instruments $U.S. Patent No. 3,439,238
4-206
T
3
2
A7T3391, A7T3391 A, A7T3392
maximum
A8T3391A A8T3392
EBC
LEADS 1
A8T3391
A7T3391A A7T3392
in this area.
ALL JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE
DEVICE
A7T3391
USES CHIP N21
Instruments TexasINCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
TYPES A5T3391, A5T3391A, A6T3392. A7T3391, A7T3391A, A7T3392, A8T3391. A8T3391A. A8T3392 N-P-N SILICON TRANSISTORS electrical characteristics at
25° C free-air temperature (unless otherwise noted)
PARAMETER
A5T3391 A7T3391 A8T3391 A5T3391A A7T3391A A8T33B1A
TEST CONDITIONS
MIN
v (BR)CEO
Collector-Emitter
'CBO
Collector Cutoff Current
'EBO
Emitter Cutoff Current
"FE
Static
Forward Current Transfer Ratio
Small-Signal hfe
Common-Emitter
Forward Current Transfer Ratio
Common-Base Open-Circuit
c obo
NOTE
IC "
Breakdown Voltage
IC-10mA. V CB - 25 V, V CB - 25 V, V EB -5V,
B -o Ib-o.
V CE
• 4.5 V,
IC-2mA
V CE
- 4.5 V,
l
must ba measured using pulse techniques.
X^,
MAX
lB =
mA,
Ta =
c -2mA.
lE-O. us,
V 100
nA
10
10
MA
100
100
nA
100
1O0°C
c-o
duty cycle
f
-
1
kHz
f
-
1
MHz
<
UNIT
MAX
25
i
- 300
MIN 25
See Note 3
ib-o
Vcb-IOV.
Output Capacitance 3: This parameter
1
A5T3392 A7T3392 A8T3392
250
500
150
300
250
800
150
500
2
10
2
10
pF
2%.
operating characteristics at 25° C free-air temperature
PARAMETER
TEST CONDITIONS
V CE -4.5V,
Average Noise Figure
l
c -100uA,
RG
Noise Bandwidth - 15.7 kHz,
NOTE
4:
Average Noise Figure
it
A5T3391A A7T3391A UNIT A8T3391A MIN MAX
measured
tn
an amplifier with response
down 3 dB
I
- 500 n.
See Note 4 at
10 Hz and 10 kHz and
a high-frequency rolloff of
6 dB/octave.
THERMAL INFORMATION DISSIPATION DERATING
25
50
75
100
CURVE
125
150
Ta— Free-Air Temperature—°C
PRINTED IN
USA.
Texas INCORPORATED Instruments TEXAS INSTIUMENTS IESEIVES THE IN
MGHT TO MAKE CHANGES AT ANY TIME
OtOEl TO IMKOVE DESIGN AND TO SUPPLY THE IEST PRODUCT POSSIBLE.
POST OFFICE BOX 8012
•
O A LIAS, TEXAS 75122
4-207
TYPE 2N3444 N-P-N SILICON TRANSISTOR BULLETIN NO. DL-8 737437, MARCH 1868 -REVISED MARCH 1973
DESIGNED FOR HIGH-SPEED, HIGH-CURRENT SWITCHING APPLICATIONS mechanical data THE COLLECTOR yt
IS IN
ELECTRICAL CONTACT WITH THE CASE
=sr
ALL DIMENSIONS ARE
,»„„.
IN
INCHES
UNLESS OTHERWISE
-MR
SPECIFIED XOUTtlNIIN
"™
—
|a-«
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE* absolute
maximum
ratings at 2S*C free-air temperature (unless otherwise noted)
Collector-Ba»e Voltacje Collector-Emitter Voltage (See Note 1) Emitter-Boie Voltage Collector Current Contlnuouj Device Dlwipatlon at (or below)
80v' 50v *v* >
Free-Air Temperature (See Note 2)
25°C
1
a
w
riOwt Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3)
B
\5w"
-o5°C
Storage Temperature Range
200"C /300°C t 1240'C' \240»C*
to
Lead Temperature Xi Inch from Case for 10 Seconds •electrical characteristics at
23°C free-air temperature (unless otherwise noted)
= 10 pa, Is = See Note 4 c = 10 ma, li=0, = 10/xa, lc = E Vci = *0v, t = TA = 100'C Vcf = e0v, E = 0, VC e = 60v, V« = -4v V C e = «0v, V B = -4v Ve, = 4v, c= lc = 150mo Vce = 1v, See Note Vce = 1v, c = 500mo 4 Vce = 5v, c = la 1, = 15 ma, c = ISO ma Set Note It = SO mo, lc = 500 ma 4 1, = 100 ma, c = 1 a It = 15 ma, lc = 150 ma See Note B = 50 mo, lc = 500 mo 4 1, = 100 ma, lc = 1 a V C e= 10 v, lc = 50 ma. See Note 5
Breakdown Voltage
l
Breokdown Voltage
V(K|CEO
Collector-Emitter
VjM)EK>
Emitter-Base Breakdown Voltage
Icio
Collector Cutoff Current
'cev
Collector Cutoff Current
MIN
CONDITIONS
TEST
PARAMETER Colltctor-Bose
V|M|CIO
MAX
l
50
V
l
5
V
l
0.5
IM
75 0.5
f" 1*
-0.5
M»
50
no
l
Ikv
Base Cutoff Current
Ieso
Emitter Cutoff Current
h«
l
Forward Current Transfer Ratio
Static
20
l
20
l
15
to
1
V
U
V
1.8
¥
0.35
v
0.6
V
l
Base-Emitter Voltage
vK
0J
l
VcE|»t)
Collector-Emitter Saturation Voltage
fl
Transition Frequency
l
Common-Base Open-Circuit
Q*.
Vce=10v,
Ie
= 0,
f
=
f
= TOO
U
Common-Base Open-Circuit
Vei
= 0.5v,
I
c
= 0,
lOOkc
12
P*
Ice
80
P»
Input Capacitance
a collector current when the base-emitter diode Derate linearly to 200°C free-air temperature at the rate of 5.71 mw/°C. Oerate the 10-watt rating linearly to 200°C case temperature at the rate of 57.1
This value applies between O and
1
200° C case temperature at the rate of 28.6 mw/°C. These parameters must be measured using pulse techniques. PW »= 300
is
y
Mc
150
Output Capacitance
Cibo
UNIT V
SO
c
open-circuited.
mw/°C. Derate the 5-watt (JEDEC
registered)
rating linearly to
To obtain f T the ,
at
which
|hf e
|
»
|h fe
|
response with frequency
is
us,
Duty Cycle < 2%. -6 db per octave from
extrapolated at the rate of
f
= 100
Mc
to the frequency
1.
within TO-5 with the exception of lead length. The JEDEC registered outline for these devices is TO-5. TO-39 •JEDEC registered data. This data sheet contains all applicable registered data in effect at the time of publication. are also shown. "•"These values are guaranteed by Texas Instruments In addition to the JEDEC registered values which falls
4-208
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75232
USES CHIP N13
TYPE 2N3444 N-P-N SILICON TRANSISTOR
* twitching characteristics
at 2S°C fr««fair tomp«ratura
PARAMim td
Delay Tims
1,
Mso
TUT CONDITIONIt
MAX
UNIT
15
nstc
35
mot
40
mst
30
nstc
5
neb
= 500 ma, !,„ = SO ma, V Wo«, - -2 v, Stt Figure Ri = 5?n, lc = SOOmo, lni| = ^i|n = 50 mo, = 5?n, Sn Figure 2 «t = 50 ma, Sh Figure 3 lc = 500 ma, lc
t,
Thm Stomas Tim
t(
Fall
Qr
Total Control Chargs
1
Tims
li
tValtag* «nd current values shown pro luminal; woel values vary slightly
wllti iransirtor
parameters.
PARAMETER MEASUREMENT INFORMATION
OUTPUT
C OUTPUT
200
200
INPUT
WV
O
INPUT o-
O
—Wr-
TEST CIRCUIT
+10.7 v
B
TEST CIRCUIT
—
+11.3 v.
-8.7v
-2v
1
-J* |10% *K
10%
If 90%
J
90%^ VOLTAGE WAVEFORMS FIGURE
1
-M-
- DEIAY AND
VOLTAGE WAVEFORMS FIGURE 2
RISE TIMES
— STORAGE AND
FAU
TIMES
_+10v
J
CI
INPUT
O INPUT
OUTPUT
io%/
OUTPUT
o
7?~
VOLTAGE WAVEFORMS TEST CIRCUIT
NOTE:
QT < 5 neb whan tha trombter hum off monotonlcolly m thown by ttntelldlliM.
FIGURE 3
NOTES:
Tin input waveforms hava tht fallowing
a.
< 2 nsec, PW > 200 nc, Duty Cycle < 2%. < S nix, PW = 10 200 iis«. Duty Cycle < < 10 nsec, PW = 10 Duty Cycle < 2%. < on an oscilloscope with the fallowing characteristics: l
r
Fir measuring storage and fall tlmel; I,
r3
PRINTED IN
I,
Waveforms are monitored
b.
'Indicates
T;
JEDEC
CONTROL CHARGE
characteristics:
For measuring delay and tin times;
Far measuring
- TOTAL
to
2%.
jusec,
l
r
1
nsec,
R,„
>
100 kf), C in
<
7 pf.
registered data
USA.
Tl
cannot assume any responsibility
or
represent
that
they
ore
free
tor
any
circuits
shown
from potent infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TexasINCORPORATED Instruments POST OFFICE BOX 9012
DALLAS. TEXAS 75322
4-209
TYPES 2N34S8, 2N3459. 2N3460 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BULLETIN NO. DL-S 7011297, APRIL 1970
FOR INDUSTRIAL AND CONSUMER SMALL-SIGNAL, LOW-NOISE APPLICATIONS
•mechanical data
THE GATE
3
IS IN
ELECTRICAL CONTACT WITH THE CASE
IMDSM"DU 0.0II
ALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE
SITS" o.oso-
0.130
O.IM
TT5W
out
w. _ojooJ
'absolute
maximum
I
0.050
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE NOTED
""I
ratings at 25° C free-air temperature (unless otherwise noted)
SOV
Drain-Gate Voltage
-50 V
Reverse Gate-Source Voltage
10
Continuous Gate Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTE
1:
*JEDEC
Derate linearly to
200°C
free-air
1)
mA
300 mW -65 C to 200^C 300 C
temperature at the rate of 1.71 mW/°C. all applicable registered deta in effect at the time of publication.
registered data. This data sheet contains
USES CHIP JN51
4-210
Instruments Texas INCORPORATED POST OFFICE BOX SOU
•
DALLAS. TEXAS 75222
TYPES 2N3458, 2N3459. 2 N 3460 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS electrical characteristics at
25°C
free-air
temperature (unless otherwise noted)
PARAMETER
1
V GS = -30V, V G S = -30 V, T A = 150°C V DG =50V V DS = 20 V, V DS = 20V,
V DS = V DS = 0,
Zero-Gate- Voltage
V DS = 20V,
V GS
= 0,
Drain Current
See Note 2 = 20 V.
V GS
= 0.
kHz,
See Note 3
= 10 V,
V GS =
Gate Reverse Current
'GSS
DGO
TEST CONDITIONS
Drain Reverse Current
.
v GS(off) Vqs 'dss
Gate-Source Cutoff Voltage
Gate-Source Voltage
Common-Source
Small-Signal
1
Forward Transfer Admittance
V DS f
-
1
V DS Common-Source
C lss
Short-Circuit
f
f
Input Capacitance
C oss
Short-Circuit
1
=
1
V DS f
Common-Source
=
V DS
-
1
V DS f
=
1
Output Capacitance Small-Signal
„ Output
Sos
Common-Source
Conductance
2N3458
MIN
MAX -0.25
nA
-0.5
-0.5
-0.5
*iA
1
1
KA
'S-O
1
nA
-8
-4
-2
Id=1mA
-7.8
-3.4
-1.8
1
D =
1
V GS
3
15
0.8
4
0.2
2.5
10
1.5
6
0.8
1
4.5
V V
mA mmho
0,
18
= 0.
pF
18
V GS =
0,
18
MHz = 30 V,
V GS
MHz,
See Notes 3 and 4
V DS = 30 V, f=1MHz,
UNIT
-0.25
MHz = 4 V,
2N3460
MAX MIN
-0.25
MHz ' 6 V,
2N3459
MAX MIN
V GS
= 0,
5
5
5
pF
35
20
5
umho
= 0,
See Note 3
"operating characteristics at 25° C free-air temperature
PARAMETER Common-Source
NF
Spot Noise Figure
TEST CONDITIONS
v DS RG =
- 10 v, 1
MS2,
v GS f
=
2N3458
MIN
MAX
2N3459
MIN
MAX
2N3460
MIN
MAX
UNIT
= o,
20 Hz,
6
4
4
dB
Noise Bandwidth = 6 Hz
NOTES:
2. 3.
4
•JEDEC
-
This parameter must be measured using pulse techniques. t = 300 Ms, duty cycle < 2%. w These parameters must be measured with bias conditions applied for less than S seconds to avoid overheating. C oss is defined as the imaginary part of small-signal common-source output susceptance divided by 2*rf.
registered data
PRINTED IN U.S.A.
Texas INCORPORATED Instruments TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
POST OFFICE BOX 5012
DALLAS. TEXAS 75222
4-211
TYPES 2N3244, ZN3245, 2N3467, 2N3488 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7310576. MAY 1968-BEVISEO MARCH 1973
DESIGNED FOR HIGH-SPEED CORE-DRIVER APPLICATIONS • High Dissipation Capability... 10 Watts at 25°C Case Temperature • High
V „ )CE o ...50 V Min (2N3245, 2N3468) Max t, at 500 mA (2N3447, 2N346S) (
• High Speed... 60 ns
• High Collector Current Rating ...
1
A
mechanical data
THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
ALL DIMENSIONS ARE IN
INCHES
UNLESS OTHERWISE SPECIFIED
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
absolute
maximum
ratings at
23°C
free-air
temperature (unless otherwise noted) 2N3244
2N3245
2N3468
UNIT
-40*
-50*
-40*
-50*
¥
-40*
-50*
-40*
-50*
V
Emitter-Base Voltage
-5*
-5*
-5*
-5*
V
Continuous Collector Current
-1*
-r
-1*
-1*
A
r
r
1*
1*
W
iot
10t
5*
5*
Collector-Base Voltage Collector-Emitter Voltoge (See Not* 1)
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2)
Continuous Device Dissipation at (or below)
25°C
Cose Temperature (See Note 3)
-45
Storage Temperature Range
2N3467
Lead Temperature X» Inch from Case for 10 Seconds Lead Temperature
NOTES:
1
.
2. 3.
K Inch from Case
for
300*
60 Seconds
10
10 to
200*
W •c
230*
•c
3
'switching characteristics at 2S*C fraa-alr temparatur*
PARAMETER td
Delay Tim*
t.
Rise
StoragoTlnw
tf
Fall
VtHtti
nd
lc = -lS0ma, Rl = 200 a, lc = -ISO ma, Rl = 37 n,
Tims
t,
Thm
carnal valats shown
a
an
All TYPES ma>(
TIST CONDITIONSt
nominal;
woel
= -15 mo,
Inn
Sm !)!)
Sm
Figure
V«| O(t)
= 0,
1
= -13 ma,
lip)
=
17 mo,
Figure 2
UNIT
10
ns*c
Ml
nsoc
80
nsoc
30
MM
valuti vary slightly with tranilitar naroiMttri.
PARAMETER MEASUREMENT INFORMATION O
-30 v
INPUT 200 .fl
O
INPUT
t
lkn WV-
T
n
-16v
-O OUTPUT
c
OUTPUT 10% (See Notes g and b)
TEST CIRCUIT
VOLTAGE WAVEFORMS FIGURE
+
15vO
1
-DELAY AND
RISE TIMES
9 -6v
ikn
INPUT
1__
I
O
37
.30 V
I
-O OUTPUT
r»N*|
lkil INPUT
Wr-
O
$son
•'•
f
90,6
1N9M
\l
10%
OUTPUT
^
(Sn Norma and b) VOLTAGE WAVEFORMS TEST CIRCUIT
FIOURI NOTESi
a.
a.
Tat Input wanfttim ata
Wawhnm
• Jf DEC ntlittrtd
mpalM
ait awalltrtd at
«
by a
OMunm
wild tat
Wltwlni
J- STORAGE AND chaiacttrittlcii
•Klllttaat with tha hlltwlna choractorMksi
I,
M
Z
£
FAIL TIMES
= 50
I), t
) nut, l ln
£ t mm, 1,^1 = 10 MO.
r
aiac,
PW
= M0 mc, Pit =
ISO
|
Ma.
PRINTED IN U.S.A.
4-218
Instruments Texas INCORPORATED «oot eppiei aox ton
•
balum. tuca*
nn
lanntl ailumi any rnttnllblllty
or
rtgrtitnl
Ihtl
Hwy «»
373
If any ilttulll shown l>» hom palMl In'rlntMUll.
Tl
TEXAS INSTRUMENTS RESERVES THE RIGHT TO IUKE IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE
OUNCES M ANT TIME KST PR0DIKT POSSHIE.
)
TYPES 2N3494 THRU 2N3497 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 678688, MARCH 18S7
HIGH-VOLTAGE TRANSISTORS FULLY CHARACTERIZED FOR HIGH-SPEED, LOW-NOISE, MEDIUM-POWER SWITCHING AND GENERAL PURPOSE AMPLIFIER APPLICATIONS
• h. ( Guaranteed from 100 /xA to 100
mA
'mechanical data Device types Device types
2N3494 and 2N3495 are 2N3496 and 2N3497 are
THE COLLECTOR
1.9
MIN
IS IN
—
1
I
7T7.
0.009
o.mo-1 0.3001
i
j
lius
ojit
DCTAK9 OF OUTIINI IN—*— THIS ION! OPTIONAL I
D
»
/
»»»/
,
0.01*
DIMENSIONS AIE
TO-5
"absolute
USE
m
MIKIM
= — ^fc
—•— 1~
o.too
JEDEC TO-5 package!. JEDEC TO-18 packages.
II
I
DM
in
ELECTRICAL CONTACT WITH THE
-j
170 . J__ O.»70
in
maximum
III
TO-18
INCHES UNLESS OTHEIWISE SPECIFIED
T0-1I
ratings at 25°C free-air temperature (unless otherwise noted)
2N3495
2N3496
2N3497
UNIT
-80
-120
-80
-120
V
-80
-120
-80
-120
V
-4.5
-4.5
-4.5
-4.5
V
-100
-100
-100
-100
mA
0.6
0.6
0.4
0.4
VI
2N3494 Collector-Base Voltage Collector-Emitter Voltage (See Note
1
Emitter-Bass Voltage
Continuous Collector Current Continuous Device Dissipation ot (or below) 2S°C Free-Air Temperature (See Notes 2
and
3)
-65
Storage Temperature Range
bot»Mn
mi 1M mA
1.
Th.ii voIimi ooplv
2.
Dtnti 1NJ4M
«<
3N3495 llimrty
3.
Dorato
MMN
one'
lUW
to
lliwatlr to
collector current
IM'C
ohm
frcwlr tomporotm
W0»C howlr
tht
to
300
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
T05
bon-mltUr
«leda
ol tho roto of 3.4)
ttmiorotura ol tho roll ol
ii
200
•c •c
•p«-ilrailM.
mW/4o|. Sh Fltno
2.H mW/*|. Sh
3.
Flfuro 4.
•JEDEC raalitom! data
USE8 CHIP P17
Instruments Texas INCORPORATED post oppiee box ton
•
dallao, tixa*
nen
4-217
TYPES 2N3494 THRU 2N3497 P-N-P SILICON TRANSISTORS
'electrical characteristics at
25°C free-air temperature
PARAMETER Collector-Base
V(kiceo
Collector-Emitter
V{wiek>
Emitter-Base Breakdown Voltage
Breakdown Voltage
loo
Collector Cutoff Current
U»o
Emitter Cutoff Current
Static
.
hFE
= -10 ,uA, = —10 mA, = -10 /iA, Vc , = -50 V, VC « = -90V, V« = -3 V, VCE = -10V, V CE = -10V, V CE = -10 V, V CE = -10 V, Vce = -10V, 1, = -lmA, 1. = -1 mA,
Breakdown Voltage
Vmicio
Forward Current
Transfer Ratio
VK
Base-Emitter Voltage
VctiMt)
Collector-Emitter Saturation Voltage
.
Small-Signal Common-Emitter '*
lc
lE
lc
1,
Ie
lc
Input Impedance
=
Vce
TO-s ->TO-18-i-
CONDITIONS
TEST
-10
= =
See Note 4
0,
= = E = lc = c = -100m* c = -lmA lc = -10 mA lc = -50 mA c = -100 mA
2N3494 2N3496 M1N MAX
2N3495 2N3497 M1N MA*
-SO
-120
V
-B0
-120
V
-4.5
-4.5
V
-0.1
E
l
l
-25
I
l
35
35
See
40
40
Note
40
40
4
40
40
UNIT
-0.1
P* r*
-25
nA
-0.9
V
-0.35
V
35
l
c =-10mA, = -10 mA,
l
See Note 4
lc
See Note 4
-0.4
-0.9
-0.4
-0.3 0.1
1.2
0.1
1.2
40
300
40
300
kft
V,
Small-Signal Common-Emitter **
Forward Current Transfer Ratio
=
lc
-10mA,
Small-Signal Common-Emitter
.
n
Reverse Voltage Transfer Ratio
=
f
N °* ,.
Small-Signal Common-Emitter
Forward Current Transfer Ratio
l
.
Common-Base Open-Circuit
^*°
Output Capacitance
.
Common-Base Open-Circuit lbo
Input Capacitance
.
Small-Signal Common-Emitter
"'I'M
input Resistance
NOTE
2x10-*
300
300
/umbo
Output Admittance .
h
2xl0" 4 kHz
Small-Signal Common-Emitter
.
1
J
4;
TheH pararmrin must b« m*asurtd
V CE
=
-10
Vc ,
=
-10V,
Veb
=
-2
Vce
=
-10
using pulsi tafinrquei.
t
p
V,
V,
V,
=
lc
=
-20 mA, 0,
f
=
100 MHz
f
=
100 kHz
7
6
PF
2
1.5
l
6
l
c
=
0,
f
=
100 kHz
30
30
Pf
l
c
=
-20mA,
f
=
300 MHz
30
30
a
= 300 pa, duty cytfi < 2%.
'switching characteristics at 25°C free-air temperature
PARAMETER to„
lc
Turn-On Time
RL lc toft
Turn-Off Time
Rl
TEST CONDITIONSt l, (l| = -1 mA, V re(o(f)
= -10 mA, = 3 kft. = -10 mA, = 3 kft,
See Figure l a| ,|
=
MAX
=
300 1
-1 mA,
Ikj)
=
1
UNIT
0,
IK
mA,
/«
1
Set Figure 2
•JEDEC raglstmd data tVollaga and currant vsluei ihown ara nominal; unci valu« vary of
4-218
VE .
Nomlnol bosi currents
lot
tom-off llmts
on
slightly with tratllllor
calculated using tin
paramtnn. Nominal bou
maximum valua
at
V
K
currant tot
.
Texas INCORPORATED Instruments POST OFFICE BOX 5013
•
DALLAS, TEXAS 7S122
him-on tlmt
Is
colcolatod
wing a minimum vain
TYPES 2N3494 THRU 2N3497 P-N-P SILICON TRANSISTORS PARAMETER MEASUREMENT INFORMATION ov
-30V
1
3kQ
T—O
V
-10.6
OUTPUT
10
10 ns I-
INPUT
i
i»—«j
J)—
1
kO
10
INPUT
<
t,
O-VWV
;£;cT .
<
i
TEST CIRCUIT
o.
,,
toff
O—Wlr-
ill NOTES:
*|
with the
Z^ =
Mlwtaif
- TURN-OFF
TIME
50 ft. charactorlsilcs: l
r
<
ID as, l
in
>
100 Ml.
JEDEC njisltred data
'
THERMAL INFORMATION 2N3494, 2N349S DISSIPATION DERATING
CURVE
2N3496, 2N3497 DISSIPATION DE RATING
3 I
CURVE
0.6
2 I
50
25
t-
75
100 125 150 175 200
Ta— Free-Air Temperature—°C FIGURE 3
,3
PRINTED IN Tl
USA.
cannot assume any responsibility far ony circuits shown
or represent
25 50 75 100 125 150 175 200 TA-Free-Air Temperature— °C FIGURE 4
that
they
are
tree
tram potent infringement.
TIXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME POSSIBLE. IN ODDER TO IMPROVE DESIGN AND TO SUPPtY THE BEST PRODUCT
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75322
4-219
TYPES A5T3496, A5T3497 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 731 1953, MARCH 1973
SILECT* TRANSISTORS* FOR HIGH-VOLTAGE, MEDIUM-SPEED, GENERAL PURPOSE APPLICATIONS 80
V
(A5T3496), 120
•
High
•
hFE Guaranteed from lOO^A
V(BR)CEO
...
to 100
V
(A5T3497)
mA
mechanical data These transistors are encapsulated
in
a
plastic
compound
specifically designed for this purpose, using a highly
mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting Ml L-STD-202C, Method 106B. The transistors are insensitive to light.
a 3-COU.ECTOl
A. Lead diameter is not controlled in this area. B. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.054 below the seating plane of the device relative to a maximum-diameter package. C. All dimensions are in inches.
absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
A5T3496 -80 V -80 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
-4.5
Emitter-Base Voltage
Continuous Collector Current
••
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2) Storage Temperature Range
•*
Lead Temperature 1/16 Inch from Case for 10 Seconds
,.
Small-Signal Common-Emitter
|
|hh
Common-lase Oem-arcuft
t ^*°
Output Capodtance
.
Common-Base lb°
mIw
applix
rat* *f 13.3 2.
bumn
mi M
m nlUcltr tro.1 «•«•
Hit
a = -10
l
l
l
l
y,
l
SeeNote4
TA
= —5S°C
10
-0.75
Ic
li
= 0,
1
mac. « in
nsec,
100
PW
>
Ml,
C,„
500 nsec, Duty Cycla
£
<
2%.
10 pi.
•Injkitoi JEDEC registered data
PRINTED IN
4-238
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TSXAS
7*223.
Tl
connol assume any responsibility
or
represent
that
they are free
tar
U.S.A.
37
any circuits shawn
from potent infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N3634 THRU 2N3637 P-N-P SILICON TRANSISTORS BULLETIN NO. OL-S 7311934, JUNE 1973
HIGH-VOLTAGE TRANSISTORS FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS • •
High
V(BR)CEO
...
140
V
(2N3634, 2N3635) or 175
High Dissipation Capability ... 10
W at 25° C
V
(2N3636, 2N3637)
Case Temperature
mechanical data
THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
Hh
a.iM*m—t*-aJ -^ IOFOUTLMHN
—
B
r-m
[•—
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
2N3634 2N3636 2N363S 2N3637 -140 V* -175 V* -140 V* -175 V* -5V* -5 V* « 1 A* •>
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25 C Case Temperature (See Note 3)
—-
-65 C to 200 C* "*"~
Lead Temperature 1/16 Inch from Case for 10 Seconds
1.
2. 3.
1
~~\ 5W*/
Storage Temperature Range
NOTES:
W*- «* J iowf\ _"""
... •
1
240°C*J
Thata valuat apply batwaan and 10 mA collactor currant whan tha amittar-bata dloda It opan-clrcultad. Darata linaarly to 200° C fraa-alr tamparatura at tha rata of 6.71 mW/°C. Darata tha 10-watt rating linaarly to 200° C caM tamparatura at tha rata of B7.1 mW/°C. Darata tha S-watt (JEDEC ragittarad) rating linaarly to 200° C ca»a tamparatura at tha rata of 28.6 mW/°C.
TO
5. TO-39 fatli within TO-5 with tha axcaptlon of load langth. ragittarad outllna for thaaa davlcaa It ragittarad data. Thlt data thaat contains all appllcabla ragittarad data In affact at tha tlma of publication. valuat art guarantaad bv Taxat Inttrumantt In addition to tha JEDEC ragittarad valuat which ara alio thown.
*Tha JEDEC
•JEDEC fThaat
USES CHIP
Instruments TexasINCORPORATED »»C*T OPPlCI
BOX tOlt
•
DALLAS. TKXAS 7B232
P22
4-239
TYPES 2N3634 THRU 2N3637 P-N-P SILICON TRANSISTORS 'electrical characteristics at 25° C free-air
PARAMETER
temperature 2N3636
2N3835
21*3834
TEST CONDITIONS
MAX MIN MAX MIN
MIN
2N3837
MAX MIN MAX
UNIT
Collector-Base
V(BR)CBO Braakdown
C --100»jA,
lE-0
-140
-140
-175
-175
V
IC--10mA,
ib-c
-140
-140
-176
-176
V
ic-o
-6
-6
-5
-8
V
I
Vol tag* Collector-Emitter
V(BR)CEO Braakdown
See Note 4
Voltaga Emittar-Bata
v (BR)EBO
Braakdown
lE--10(iA,
Voltaga Collector Cutoff
>CBO
Currant
V CB --100V, lE-0
Emitter Cutoff
>EBO
Current
Static
"FE
B
Forward
Current Transfer Ratio
V BE
v CE(iatl
Bate-Emitter
Voltage
Collector-Emitter
Saturation Voltage
V EB --3V.
VcE'-lOV, VCE--10V. V C E--10V, V C E--10V, V C E--10V. -10 mA,
I(j
-
Ij,
. _{jo
mA,
IC--10mA. I
c - -50 mA,
ic-o l
mA mA
-1
IC--10mA IC "
-BO mA
IC-
-160mA
nA
-50
-60
-60
-50
nA
40
90
45
90
See
50
100
50
100
Note
50
4
25
--1 mA
See
B
-100
SO
See
l
-100
45
mA IB " -6 mA IB--1
-100
40
c - -0.1
IC -
-100
160
100
300
50
80
150
100
300
50
25
50
-0.8
-0.8
-0.8
-0.8
-0.9 -0.65
-0.9 -0.65
-0.9 -0.65
-0.9
-0.3
-0.3
-0.3
-0.3
-0.5
-0.5
-0.6
-0.6
V 4
-0.65
V
lB"-5mA
4
Small-Signal
Common-Emitter
h| e
0.1
0.6
0.2
1.2
0.1
0.6
0.2
1.2
40
160
80
320
40
160
80
320
kft
Input Impedance Small-Signal
Common-Emitter hfe
Forwerd Current Transfer Ratio Small-Signal
V C E--10V, f
-
1
l
c - -10 mA,
kHz
Common-Emitter "re
Reverse Voltage
3x
3x
3x
3x
10-4
10-4
10-*
10—«
200
200
200
Transfer Ratio Small-Signal
Common-Emitter hog
Output
200 ^mho
Admittance Small-Signal
Common-Emitter
V C E--30V,
Forward Current
f- 100 MHz
IC "
-30 mA, 2
1.6
»>f.l
2
1.5
Transfer Ratio
Common-Base
C bo
Open-Circuit
V CB --20V,
Output
f- 100 kHz
lE-0,
10
10
10
10
pF
76
76
76
76
pF
Capacitance
Common-Base Cibo
Open-Circuit
V EB --1V,
"c-o,
f- 100 kHz Input Capacitance
NOTE
4-240
4:
These peremeters must be measured using pulse techniques, tw - 300
Ms,
dutv cycle
< 2%.
Instruments TexasINCORPORATED PMT
OPFIOI BOX
MM
•
DALLAI, TIXA* 7IIII
TYPES 2N3634 THRU 2N3637 P-N-P SILICON TRANSISTORS 'operating characteristics at 25° C free-air temperature
PARAMETER V CE
Spot NoiM Figure
F
RG -
1
MAX UNIT
MIN
TEST CONDITIONS -10 V, C - -0.6 mA,
-
l
k«,
f
-
3
kHi
1
dB
"switching characteristics at 25° C free-air temperature
MAX UNIT
MIN
TEST CONDITIONS*
PARAMETER
VCC--100V, c --50mA, B(1) --BmA, V BE off )-4V, l
Turn-On Time
ton
l
(
See Figure
400
ns
600
ns
1
V CC --100V, C --50mA, l
t„ff
lB(1)"- 5m A, lB(2|"6mA,
Turn-Off Time
See Figure T Voltaga
and currant values shown ara nominal; axact valuas vary
slightly
1
with transistor paramatart.
'PARAMETER MEASUREMENT INFORMATION -100V
D OUTPUT
i
INPUT
kn
O—VWr
TEST CIRCUIT
4V
— INPUT
-5.65
V r»t on -i L
v=
90%
OUTPUT
OUTPUT
VOLTAGE WAVEFORMS FIGURE
1
A. The Input waveforms ere supplied by a generator with the following characteristics:
NOTES:
20 fie. duty cycle < 2%. Weveformt ere monitored on en oscilloscope with the following
Z out - 50 O,
tr
< 20
ns, tf
< 20
r
tyy •»
B.
•JEDEC
chereeterlstlct.' t r
<
10
ns,
R in
>
100
kll, C\ n
<
5 pF.
registered dete
PRINTED IN U.S.A. Tl
cannot stiumi any mpsntiBlMty
sr rtprtisnl
thai
thty srs Itil
1st
any cftcuitt thswn
film psltnt
lefrlegement.
TEXAS INSTRUMENTS KSEIVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN ORDEft TO
IMPROVE DESIGN AND TO SUPPLY THE IEST PRODUCT POSSIBLE.
Instruments TexasINCORPORATED post oppiei eox ion
•
mlui,
tixab
7hh
4-241
TYPES A5T3638. A5T3638A P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7311952, MARCH 1973
SILECTt TRANSISTORS* FOR HIGH-CURRENT, MEDIUM-SPEED SWITCHING APPLICATIONS 500 mA
•
High Collector Current
•
Electrically Identical to
•
High Dissipation Capability
.
.
.
2N3638, 2N3638A (TO-105)
mechanical data These transistors are encapsulated
in
a plastic
compound
specifically designed for this purpose, using a highly
mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting
MIL-STD-202C, Method 106B. The
transistors are insensitive to light.
3- COtlfCTOI
A. Lead diameter is not controNed in this area, B. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.064 below the seating plane of the device relative to a maximumdiameter package. C. All
absolute
dimensions are
maximum
in inches.
ratings at 25° C free-air temperature (unless otherwise noted)
-25 V -25 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note
Emitter-Base Voltage
.
.
.
1
)
-4V
.
-500 mA
Continuous Collector Current Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25° C Lead Temperature (See Note 3)
1
mW W
.25
-65°Cto 150°C
Storage Temperature Range
260°C
Lead Temperature 1/16 Inchfrom Casefor 10 Seconds
NOTES:
625
mA
mA
This value applies between 0.01 collector current when the base-emitter diode is open-circuited. and 500 Derete linearly to 160°C free-air temperature at the rate of 5 mW/°C. Derate linearly to 150°C lead temperature at the rate of 10 mW/°C. Leed temperature is meesured on the collector lead 1/16 inch from the case. ^Trademark of Texas Instruments tll.S. Patent No. 3,439,238 1
.
2. 3.
USES CHIP P20
4-242
Instruments Texas INCORPORATED post
ma
aox son
•
dallac.
tuai ntn
TYPES A5T3638. A5T3638A P-N-P SILICON TRANSISTORS
25° C free-air temperature (unless otherwise noted)
electrical characteristics at
PARAMETER v (BR)CBO v (BR)CEO V (BR)CES
Collector-Base
v (BR)EBO
Emitter-Base Breakdown Voltage
'CES
Collector Cutoff Current
'B
Base Current
hFE
Breakdown Voltage
l
c --100uA,
l
c - -10 mA,
l
Collector-Emitter
Breakdown Voltage
l
Collector-Emitter
Breakdown Voltage
IC = -100>tA, l
E = B-
See Note 4
0,
V BE =
E =-100|iA, ic = o
V CE --15V, V C E--15V, VCE--1SV, V CE = -10 V, V C E - -10 V, V CE --1V,
V BE =
Saturation Voltage
lg
Base-Emitter Voltage
20 30 20
l
VcE(sat)
-0.8
Small-Signal hj e
|
- -30 mA,
IC =
-300 mA
See Note 4
nA MA nA
100 100
20 -1.1
-2 -0.8
-2
-0.25
-0.25
-1
-1
2
2
V V
Common-Emitter k(l
Input Impedance Small-Signal
Common-Emitter
25
hfe
Forward Current Transfer Ratio Small-Signal
h re
Common-Emitter
Vce
=
-10V,
(C =
-10mA,
f
=
1
Small-Signal
Small-Signal
Common-Emitter
Forward Current Transfer Ratio
Common-Base Open-Circuit
Cobo
Output Capacitance
Common-Base Open Cibo
Input Capacitance
4:
26 x
15x
10-4
10-*
1.2
1.2
mmho
Common-Emitter
Output Admittance
Ihfel
100
kHz
Reverse Voltage Transfer Ratio
hoe
NOTE
35
-1.1
l
l
-35 -2 80
l
I
V BE
UNIT
V V V V
-25 -25 -25 -4
35
Collector-Emitter
Forward Current Transfer Ratio
MAX MIN MAX
-35 -2
Ta = 65"C
c - -1 mA c = -10mA lc - -50 mA Vce = -2V. IC = -300 mA B = -2.5 mA, lc = -50 mA B = -30mA, IC = -300 mA B = -2.5 mA, c = _50mA
Static
MIN -25 -25 -25 -4
V BE »0 Vbe-0.
A6T3638A
A5T363S
TEST CONDITIONS
Circuit
V CE
=
-3V,
=
_50mA, f= 100 MHz
l
c
V C B = -10V,
l
E =
V EB - -0.5 V
IC = 0.
These parameters must be measured using pulse techniques, t^ = 30O
MHz
20
10
pF
f-1MHz
65
35
pF
f
0,
*».
=
1
duty cycle
Texas INCORPORATED Instruments POST OFFICE BOX 5012
1.5
1
DALLAS, TEXAS 75222
< 2%.
4-243
TYPES A5T3638, A5T3638A P-N-P SILICON TRANSISTORS
switching characteristics at 25° C free-air temperature
PARAMETER td
Delay Time
tr
Rise
top
Turn-On Time
tg
Storage
tf
Fall
t„ff
Turn-Off Time
T Voltage
TEST CONDITIONS'' c = -300 mA, -30 mA, V BE ff) - 3.1 V.
V C c--10V,
Time
'B( 1 )
-
See Figure
1 I
'B(1)"-30mA,
Time
See Figure
and currant values shown are nominal; exact values vary
slightly
MAX UNIT
[
V CC = -10V,
Time
MIN
l
l
C - -300 mA, B (2)-30mA,
1
20
ns
70
ns
75
ns
140
ns
70
ns
170
ns
with transistor parameters.
PARAMETER MEASUREMENT INFORMATION 3.1
V
-10
V
o •
3on -O OUTPUT
1 kli
1»F INPUT
O—•—|£-
170
R
—vsrV—
TEST CIRCUIT
INPUT
OUTPUT
VOLTAGE WAVEFORMS FIGURE NOTES:
a.
b.
1
The input waveforms are supplied by a generator with the following characteristics: Z out - SO t^, = 500 ns, duty cycle < 2%. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 1 ns, Rg n > 100 kfl,
SI,
tr
CBO
Collector Cutoff Current
VCB-«V,
l
Collector Cutoff Current
Vf>E-BV,
l
'ceo 'ebo
Emitter Cutoff Current
Veb'BV,
Forward Current Transfer Retlo
v?e
Ban-Emitter Voltage
VcE"6V,
VcE(ut)
Collector-Emitter Saturation Voltage
lg - 0.5
hfe
Common-Emitter Input Impedance
Small-Signal
Common-Emitter
Forward Current Transfer Ratio Smell-Signal
V
T A -1B0°C
B V,
mA,
Vc£-5V,
lc -
10 10
80
1
1
Reverts Voltage Transfer Retlo
"oe
Small-Signal
Common-Emitter Output Admittance
M
Small-Signal
Common-Emitter
cobo
Common-Base Open-Circuit Output Capacitance
Cibo
Common-Base Open-Circuit Input Capacitance
nA MA nA nA
10
-
45 225 300
-56°C
mA
lc-10mA lc"10mA
lc-1mA,
600
160
TA
0.7
V V
7.5
24
kfi
300
900
0.8
0.6
f
-
1
kHz
1
10 x
Common-Emitter
"re
V
B
I
Static
Smell-Signal
V
60 10
E -0,
lc -
UNIT
6
MA lc-10»A C -10mA, Ic-100mA
* 6 V,
"FE
"le
MAX
60
-0 Ic*0
VCE-6V, VCE-6V, VCE-6V, Vce
See Note B
B -0,
l
lE'lOuA,
Vce
MIN
TEST CONDITIONS Ie-o
PARAMETER Collector-Base
V{BR)CBO v (BR)CEO VlBRlEBO
10-4 45 jimho
VcE-BV,
lc-5O0»A.
f
- 30
f
-
1
f
-
1
MHz
2
6
Forward Current Tramfer Ratio
VcB ' 5 v 'E ' 0. Veb-O-SV, lc-0. .
MHz MHz
6
pr-
6
pF
triode matching characteristics
PARAMETER hFE1
Static Forward-Current Gain Balance Retio
"FE2 l
v BE1 _v BE2l
Base-Emitter-Voltage Differential
I
l
VCE-BV. VcE-BV,
I
I
c -10mA c -10mA,
Base-Emitter-Voltage-Differential
|a(V BE 1-V BE2 ) a t
a
|
Change with Temperature
MIN
TEST CONDITIONS See Note 6 C -10mA. V C E = BV. c -100uA, See Note 6, TA--55°Cto125°C
VcE-BV,
VcE'BV,
l
c -10uA.
MAX
0.9
1
0.85
1
3
Ta(1)-25"C T A(2 ) - -S6°C T A (1)-25°C, T A(2 )-125 C
UNIT
mV
400
MV 500
,>
•operating characteristics at 25° C free-air temperature individual triode characteristics (see note 4)
TEST CONDITIONS
PARAMETER
Vcb"5V, Average Noise Figure
4.
Ie^-IOjiA,
MIN
MAX
R G -10kn,
UNIT dB
Noise Bandwidth - 15.7 kHz, See Note 7
of these characteristics. Th. termin.l. of the triode not under test ere open-circulted for the meesurement cycle < 2%. perameter must be meetured using pulse techniques, t,, - 300 (is, duty The lower of the two hpc readings is taken as hpg-]. down 3 dB et 10 Hz end 10 kHz and e high-frequency Avereg. Noise Figure i, measured in an amplifier with re^ons.
5. This 6. 7.
rolloff of
6dB/octave.
*JEDEC
registered deta
PRINTED IN
USA,
Instruments Texas INCORPORATED ANY TIME TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT THE BEST PRODUCT POSSIBLE, IN ORDER TO IMPROVE DESIGN AND TO SUPPLY
POST OFFICE BOX 5012
.
DALLAS, TEXAS 78222
4-249
TYPES 2N3702, 2N3703, A8T3702. A8T3703 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7311772, JANUARY 1973
SILECTt TRANSISTORS* •
For Medium-Power Amplifiers, Class
B Audio
•
Also Available in Pin-Circle Versions
.
•
For Complementary Use with
.
.
Outputs, Hi-Fi Drivers
2N5447, 2N5448
2N3704 thru 2N3706
A8T3704 thru A8T3706
or
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting Ml L-STD-202C, Method 106B. The transistors are insensitive to light.
•ALL JEOEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE
a NOTES:
A. Lead diameter B.
All
Is not controlled dimensions are in inches.
absolute
maximum
A8T3702 A8T3703
I
I
ECB
EBC
in this area.
LEADS
DEVICE 2N3702, 2IM3703 A8T3702, A8T3703
2N3702 2N3703
3
1
2
Emitter
Collector
Base
Emitter
Base
Collector
ratings at 25° C free-air temperature (unless otherwise noted)
2N3702 A8T3702 -40 V* -25 V*
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage
-5V*
Continuous Collector Current
^
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2) Continuous Device Dissipation at
(or
\360mW*/~* W §\ -» \500mwy
—65°C to
Lead Temperature 1/1 6 Inch from Case for 10 Seconds NOTES: 1. These values apply when the base-emitter diode is open-circuited. 2. Derate the 625-mW rating linearly to 160°C free-air temperature at the retlno lineerly to 150 C free-elr tempereture at the rate of 2.88 mW/°C.
'.'.'.
rete of 6
150°C* 260°C*
500-mW (JEDEC
registered) registered)
measured on the collector lead 1/16 Inch
case.
•The
+
mW/°c. Derete the 360-mW (JEDEC
Derete the 1.2B-W rating linearly to 150°C lead tempereture at the rate of 10 mW/°C. Derate the reting lineerly to 150 C leed tempereture at the rata of 4 mW/°C. Lead temperature Is
from the
-5V* » mA* /B25 mW§t 200
*-^' 1 26
below) 25°C Lead Temperature (See Note 3)
Storage Temperature Range
3.
2N3703 A8T3703 -50 V* -30 V*
asterisk identifies JEDEC registered data for the effect at the time of publication. '''Trademark of Texas Instruments
2N3702 and 2N3703
only. This data sheet contains
all
applicable registered data In
tv.S. Patent No. 3,439,238 § Texas Instruments guarantees these values in addition to the
4-250
JEDEC
registered values
which are
TexasINCORPORATED Instruments POET OFFICE BOX 5012
•
DALLAS. TEXAS 78232
also
shown.
USES CHIP P20
TYPES 2N3702. 2N3703. A8T3702. A8T3703 P-N-P SILICON TRANSISTORS
'electrical characteristics at 25°
C free-air temperature TEST CONDITIONS
PARAMETER Collector-Base
V(BR)CBO
l
c = -100uA,
l
E=
l
c =-10mA,
l
B -0,
l
E = -100)iA,
I
C=
Collector-Emitter
-50
V
See Note 4
-25
-30
V V
-5
-5
Bre akdown Voltage
IrRO
Collector Cutoff Current
lEBO hFE
Emitter Cutoff Current Static
VbE
Base-Emitter Voltage
V CB = -20 V, V EB = -3V. V C E = -5V, V CE = -5 V.
Forward Current Transfer Ratio
Collector-Emitter I
B=
E =
l
c =0 - -50 mA, See Note 4 c = -50 mA, See Note 4
l
— 5 mA,
Irj
-0.6
V CE
Transition Frequency
Common-Base Open-Circuit obo
V CB
= -
-5V,
l
-10 V,
c = -50mA, See Note 5
l
E=
30
150
-1
V
-0.25
V MHz
100
100
f=1MHz
0.
nA nA
-0.6
-0.25
—50 mA, See Note 4
=
300 -1
60
l£j l
-100 —100
-100 -100
saturation Voltage
f-r
12
12
pF
Output Capacitance
NOTES- 4 These 5.
2%. parameters must be measured using pulse techniques, tw - 300 (is, duty cycle < at the rete of -6 dB per octave from |h fe response with frequency is extrapolated
To obtain f T the ,
at
•The
-40
voltage
Emitter- Base
VcE(sat)
2N3703 UNIT A8T3703 MIN MAX
Breakdovvn voltage
V(BR)CEO Breakdown V(BR)EBO
2N3702 A8T3702 MIN MAX
which
f
- 20
MHz
to the frequency
1
|
|hfe |= 1.
asterisk identifies
JEDEC
registered data for the
2N3702 and 2N3703
only.
THERMAL INFORMATION LEAD TEMPERATURE CURVE
FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE
|
DISSIPATION DERATING
5
800
1600
E c I
I
o
"^
1400
700 a.
CO
f
600
.1
500
1200
a
5
>
Q a
3 O c +» c
300
u
JEDEC
:
registe
ed^s
\T
CP
O
3uarant eed
400
o
1000
">
\TI
Guarar teed
800 600
U
^
200
fc
400
3
JEDE Z
E 100
CO
5
registe
red
200
I
r-
I
25
50
100
75
125
150
75
125
100
T|_— Lead Temperature—
TA-Free-Air Temperature— C
FIGURE
50
25
150
C
FIGURE 2
1
PRINTED IN U.S.A.
Instruments Texas INCORPORATED ANY TIME TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT SUPPLY THE BEST PRODUCT POSSIBLE. IN ORDER TO IMPROVE DESIGN AND TO
POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
4-25
TYPES 2N3704 THRU 2N3706. A8T3704 THRU A8T3706 N-P-N SILICON TRANSISTORS
^_^_
BULLETIN NO. DL-S 7311771, JANUARY 1973
SILECT t TRANSISTORS* •
For Medium-Power Amplifiers, Class B Audio Outputs, Hi-Fi Drivers
•
Also Available
•
For Complementary Use with 2N3702, 2N3703 or A8T3702,
in Pin-Circle
Versions
.
.
.
2N5449, 2N5451
A8T3703
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C, Method 106B. The transistors are insensitive to light.
ALL JEOEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE —M |»-
MM (NOTI
"
A) .
r
,„
L * *""
+0.005
2N3704 2N3705 2N3706
0.200
+ 0.005 -0.01S
i_
0.100
i
A8T3704 A8T370S A8T3706
T
*o.oosJ
J 0.050% .„. 0.01 „_
MM.
- 0.500
1
NOTES:
A. Lead diameter B.
Alt
is not controlled dimensions are in inches.
2N3704. 2N3705, 2N3706 A8T3704, A8T3705, A8T3706
maximum
f
LEAD
DEVICE
absolute
in this area.
ratings at
25°C
1
2
Emitter
Collector
Base
Emitter
Base
Collector
free-air
ECB
3
temperature (unless otherwise noted)
2N3704 2N3705 A8T3704 2N3706 A8T3705 A8T3706
...
„
EBC
Collector-Base Voltage
5fJ
Collector-Emitter Voltage (See Note Emitter-Base Voltage
v«
30v
1)
.
5V »
Continuous Collector Current
^
4QV . 20V . 5
oqq
v«
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2)
mA 625 mW §\_» «-
*
W*
*
I
65°Cto200°C*
—
«»
{300°^ NOTES:
1.
These values apply between is
and 100
mA collector current for 21N3734 or
and 40
mA for 2N3735 when the base-emitter diode
open-circuited.
200°C free-air temperature at the rate of 5.71 mW/°C. Derate the 10-watt rating linearly to 200° C case temperature at the rate of 57. > mW/°C. Derate the 4-watt rating linearly to 200° C case temperature at the rate of 22.8 mW/°C.
2. Derate linearly to 3.
(JEDEC
registered)
*The JEDEC
*JEDEC
registered outline for these devices is TO-5. TO-39 falls within TO-5 with the exception of lead length. registered data. This data sheet contains all applicable registered data in effect at the time of publication,
f These values are
guaranteed by Texas Instruments
in
addition to the
JEDEC
registered values
which are also shown.
USES CHIP
4-262
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 7S222
N13
TYPES 2N3734, 2N373S N-P-N SILICON TRANSISTORS 'electrical characteristics at 25°
C free-air temperature
PARAMETER v (BR)CBO
Collector-Base
v (BR)CEO v (BR)EBO
Collector-Emitter
CEV
Breakdown Voltage
Breakdown Voltage
Emitter-Base Breakdown Voltage
Bass Cutoff Current
Static
"FE
Forward Current Transfer Ratio
l
lc" 10 mA, lg- 10 mA,
lB-0. ic = o
V CE VCE V CE
- 40 V,
Vce V CE Vce v Ce V C£
- 25 V.
V BE --2V
-40V, - 1 v -iv,-
V BE
= 25 V. " 40 V.
IC =
.
-
1
v CE(sat)
Collector-Emitter Saturation Voltage
Small-Signal
Nel
Forward Current Transfer Ratio
Output Capacitance
Common-Base Open-Circuit Cibo
NOTE
Input Capacitance
4:
1
TA
l
75
V
50
V
5
V
20
T A = 100°C
20 0.3
MA
= -2V 10mA
0.3
See Note 4
35
35
40
40
35 30
35 120
30
10mA
IC- 150 mA
Ig" 50 mA,
IC -
500 mA
IB- 100 mA, IB = 1 mA, IB - 15 mA, Ig - 50 mA,
IC =
1
A
0.9
c = 150 mA 500
80
0.8
1
1
1.2
1.2
See Note 4
lc= 10 mA IC =
20 20
0.8
lB-15mA.
l
«A 0.2
c =1 A C =15A
lc =
mA,
50 30
- 100°C
1.4
0.9
V
1
1.4
0.2
0.2
0.3
0.3
0.5
0.5
See Note 4
mA
V
IB- 100 mA.
IC-1 A
vce- iov.
IC -
Vcb-IOV,
l
E -0.
f- 100 kHz
9
9
pF
VE b
ic-o.
f- 100 kHz
80
80
pF
0.9
Common-Emitter
Common-Base Open-Circuit
Cobo
B-
l
UNIT
0.2
iC- 150 mA IC - 500 mA
v.
MAX MIN MAX
5
V CE
l
Base-Emitter Voltage
See Note 4
V BE = -2V V BE --2V, V BE --2V V BE = -2V.
- 25 V.
v C e -1.5 V. v C e - 5 v. V BE
E
MIN
=0
ic = 10 mA,
2N3735
2N3734
TEST CONDITIONS
Collector Cutoff Current
'bev
(unless otherwise noted)
= 0.5 V,
These parameters must be matiurtd using puis* techniques,
t^,
50 mA,
= 300
M*.
f
- 100
duty cycle
<
MHz
3
0.9 2.5
2%.
"switching characteristics at 25° C free-air temperature
PARAMETER t,j
Delay Time
tr
Rise
Time
toff
Turn-Off Time
Or
Total Control Charge
MAX
TEST CONDITIONS*
'C-1A, Vce -30 V, v BE(off)- -2 v 'C-1A, Vce = 30V, .
'B(2) "
-100 mA,
o
Emitter Cutoff Current
Static
h«
=
TA
l
150°C
l
Forward Current
Transfer Ratio
Collector-Emitter Saturation Voltage
V CE
=
=
TA
-55°C
pk
-20
nA
300 450
Forward Current Transfer Ratio lc
125
250
=
-0.7
-07
V
-0.7
-0.7
V
-0.8
-0.8
V
-0.2
-0.2
V
-0.25
-0.25
V
3
30
10
40
150
400
300
900
kn
-1 mA, 25 x 10"*
25
Reverse Voltage Transfer Ratio f
=
xlO-* 1
kHz
Small-Signal Common-Emitter
ho.
900
150
75
Small-Signal Common-Emitter hr.
300
300
-10V,
Small-Signal Common-Emitter
K
-10
-20
150
1,
Input Impedance
-10
225
150
Small-Signal Common-Emitter h,.
nA
150
1,
VcE(ul)
-10
100
l
Base-Emitter Voltage
V
-10
75
l
V*
UNIT
MIN
l
'cBO
2N3799
2N3798
TEST CONDITIONS
PARAMETER
5
40
5
5
1
40
jLimho
Output Admittance
K\
Small-Signal Common-Emitter
VCE
Forward Current Transfer Ratio
V CE
= _5V, = -5 V,
VC i
=
Common-Base
u,
Open-Circuit
Output Capacitance
-5
l
c
I
c
= =
-500|iA,
l
-1 mA,
f
= =
l
E
=
0,
f
=
V,
30 MHz
1
100 MHz
1
1
5
4
4
100 kHz
PF
'operating characteristics at 25 °C free-air temperature TEST CONDITIONS
PARAMETER Vce f
NF
=
Vce
Spot Noise Figure
f
=
Vce f
NF
NOTES:
V CE
Average Noise Figure
4.
Thm
5.
Avtrug* Noise Figure
•Indicates
JEDEC
=
=
measured
V,
= 1
-10
V,
l
c
l
c
V, lc
Noise Bandwidth
in
=
= =
300
fit,
=
=
-100 pk, R s
= =
= =
cycle-
<
7
4
dB
3
1.5
dB
2.5
1.5
dB
3.5
2.5
dB
3 kft,
3
-100 fiA, R e = 3 157 kHz, See Note 5
duty
kO, kft,
2%. at 10 Hi.
registered data
PRIMED
4-266
UNIT
2 kHz
=
en amplifier with law-frequency response down 3 dl
MAX
200 Hz
-100 pk, Rs
=
3 Y£l,
2N3799
MAX
20 Hz
-100 pk, R 6
Noise Bandwidth
10 kHz,
-10
c
Noise Bandwidth
kHz,
= -10 V, =
l
Noise Bandwidth
100 Hz,
paran»lin must bt mHsurri using pulsf tlchniquts. IIs
-10
=
2N3798
IN U.S.A.
Instruments Texas INCORPORATED POST OFFICE BOX B012
•
DALLAS, TEXAS 7S212
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N3806 THRU 2N3811 DUAL P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7211686, MARCH 1972
TWO TRANSISTORS IN ONE PACKAGE RECOMMENDED FOR Differential Amplifiers
High-Gain, Low-Noise Amplifiers
Low-Level Flip-Flops
Complementary Use With 2N2913 Thru 2N2920 And 2N2639 Thru 2N2644 Dual N-P-N Transistors 'mechanical data ALL LEADS INSULATED FROM CASE
Dimensions without tolerance designate true position. Leads having maximum diameter (0.019") measured in gaging plane 0.064" +0.001" -0.000" below the seating plane of the device shad be within 0.007" of their true positions relative to a maximum-width tab.
* LEAH 0.150
—
f
—J.
t
turn OS35
" \
1.
1 J
— "Wff-J
6. 7.
COLLECTOR
3. 5.
quick-selection guide (for details see characteristics
'absolute
c - -0.1 150-450 (l
2N3806 2N3807
•
2N3808 2N3809
•
2N3810 2N381
•
maximum
to
1
ALL DIMENSIONS ARE IN NCHE S UNLESS OTHERWISE ,
SPECIFIED 2
on pages 2 and
MIN-MAX h FE TYPE
COLLECTOR BASE 1 EMITTER 1 EMITTER 2 BASE 2
2.
3)
MATCHING Uc--iooma>
MAX|Vbe1-VbE2|
-1 mA) 300-900
h FE
u c - -100 mA)
5mV
3mV
10%
20%
• • •
•
•
•
•
•
•
•
•
ratings at 25° C free-air temperature (unless otherwise noted)
EACH TOTAL TRIODE DEVICE -60 V -60 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
-5V mA
Emitter-Base Voltage
-50
Continuous Collector Current Continuous Device Dissipation at
(or
below) 25° C Free-Air Temperature (See Note 2)
500
mW
600
mW
Storage Temperature Range
-65°C to 200°C
Lead Temperature 1/16 Inch from Case for 10 Seconds
•«
NOTES:
1.
2.
*JEDEC
This value applies when the base-emitter diode is open-circuited. Derate linearly to 200° C free-air temperature at the rates of 2.9 Dissipation Derating Curve, Figure 1.
registered data. This data sheet contains
all
mW/°C
for each triode and 3.4
mW/°C
—
230°C
for total device. See
applicable registered data in effect at the time of publication.
USES CHIP P19
Texas INCORPORATED Instruments POST OFFICE BOX 5012
DALLAS, TEXAS 75222
4-267
TYPES 2N3806 THRU 2N3811 DUAL P-N-P SILICON TRANSISTORS
•electrical characteristics at
25°C
free-air
temperature (unless otherwise noted)
individual triode characteristics (see note 3)
TEST CONDITIONS
PARAMETER
V(BR)CBO v (BR)CEO v (BR)EBO
Collector-Base
Breakdown Voltage
c --10mA, e -^10mA. V CB = -50V, V CB = -50V, Ve B = -4V, Vce = -SV. Vce = -5V, l
Ib = 0,
Emitter-Base Breakdown Voltage
I
Ic =
Collector Cutoff Current
'ebo
Emitter Cutoff Current
Static
Forward Current Transfer Ratio
Vce V CE
-SV, =
-5V,
Vce"— 5 V, Vce
-
-5 v,
VBE
l
I
Small-Signal hie
Small-Signal
'C"°
Common-Emitter
Small-Signal
450
300
900
150
450
300
900
lc--1mA
150
450
300
900
lc""-10mA, See Note 4 ic - -ioo ma, t a - -55°c
125
Small-Signal
-0.7
-0.7
-0.7
-0.8
-0.8
b = -100mA, Ic
Ic
—
1
mA
-0.2
-0.2
-0.25
-0.25
3
30
10
40
150
600
300
900
c = -1 mA, f
-
1
V kO
25 X
25 X
10-4
10—4
kHz
Common-Emitter Common-Emitter
Common-Base Open-Circuit
5
3.
4.
V CE --5V, V C E = -SV,
I
l
c --500mA, f = 30MHz c --1mA, f* 100 MHz
Ie =
0,
Common-Base Open-Circuit Input Capacitance V£ B - -0.5 V, Ic -
0,
Output Capacitance
Cibo
4-268
--100 mA
V
v C E- -iov,
Common-Emitter
Forward Current Transfer Ratio
C bo
•JEDEC
150
75
= Ic--100mA B -10/iA, 1 mA b = -100mA, Ic
B = -10»iA,
nA
250 -0.7
I
MA
225
150
lc =
nA
60
5
60 umho
Output Admittance
w NOTES:
V -10 -10 -20
- -500 liA
lc
Reverse Voltage Transfer Ratio
h OT
-5
100
l
Small-Signal
V V
-60 -60
Ic'- 10 Ic"-100mA
Forward Current Transfer Ratio
h re
^
UNIT
MAX MIN MAX
-10 -10 -20
T A =150°C
lg-0,
Common-Emitter
Input Impedance
hfe
See Note 4
MIN -60 -60 -5
lg-0
l
Collector-Emitter Saturation Voltage
VcE(sat)
2N3809 2N3811
-100/xA
Vce^-SV, Base-Emitter Voltage
2N3807
2N3808
2N3810
Ie =
Collector-Emitter Breakdown Voltage
ICBO
hFE
c --10mA,
I
2N3806
VC b
=
-5V,
1
1
5
f= 100 kHz
4
pF
f- 100 kHz
8
8
pF
triode not under test are open-circuited for the measurement of these characteristics. These parameters are measured using pulse techniques, t,, - 300 jus, duty cycle < 1 %.
registered data
Instruments Texas INCORPORATED DALLAS, TEXAS 75222
5
4
The terminals of the
POST OFFICE BOX SO 12
1
1
TYPES 2N3806 THRU 2N3811 DUAL P-N-P SILICON TRANSISTORS 'electrical characteristics at
25° C
free-air
temperature (unless otherwise noted)
triode matching characteristics
2N3808
PARAMETER
TEST CONDITIONS
2N3809
MIN hpEi hpE2
Static Forward-Current-
|VbE1— v BE2l
Base-Emitter-Voltage Differential
G ain
l.„,
,, NVBE1 V BE2 ATA ,
i
Vce
Balance Ratio
Base-Emitter- Voltage-Differential
=
-BV,
Ic =
V CE = -5V, V CE =-5V,
v CE
-
l
I
-100mA, See Note 5
c -=-10*iA to -10 c = -100mA
UNIT
MAX MIN MAX
0.8
1
mA
.c~i»*.£«»:2c
5 v.
2N3810 2N3811
0.9
1
8
6
S
3
1.6
0.8
mV
mV
,
|
ChangeWitnTemperature
V CE =-5V,
I
T A(1)-25°C, C --100 mA. T A(2 )=125°C
2
1
mV
'operating characteristics at 25° C free-air temperature individual triode characteristics (see note 3)
PARAMETER
TEST CONDITIONS
V CE -
f
F
1
V CE
Spot Noise Figure
f
-
1
Vc E f
F
-
-10V, c «-100mA, RQ=3kn,
=
-10
V,
Noise Bandwidth = 200
Hz
c = -100 MA, Rq = 3
kfi,
l
Noise Bandwidth - 2 kHz
-10V, c = -100nA, RQ = 3kn,
3. 5.
6.
*JEDEC
UNIT
7
4
dB
3
1.5
dB
2.5
1.5
dB
3.5
2.5
dB
l
Noise Bandwidth -
NOTES
MAX
l
kHz, =
MAX Noise Bandwidth = 20 Hz
-10 V, c = -100 nA, R G = 3 kn.
kHz.
-
2N3807 2N3809 2N3811
1
00 Hz,
1
V CE
Average Noise Figure
=
2N3806 2N3808 2N3810
1
5.7 kHz,
See Note 6
The terminals of the triode not under test are open-circuited for the measurement of these characteristics. The lower of the two hpE reading is taken as hpEiAverage Noise Figure is measured in an amplifier with response down 3 dB at 10 Hz and 10 KHz and of 6 dB /octave.
a high-frequency rolloff
registered data
THERMAL INFORMATION
DISSIPATION DERATING
To
CURVE
ID*riot
1 riods
T
t 26
60
75
100
125
150
178 200
TA-Frw-Air T«mperature-°C
FIGURE
i73
PRINTED IN
1
USA.
Instruments Texas INCORPORATED TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUrPtT THE BEST PRODUCT POSSIBLE.
POST OFFICE BOX B012
DALLAS. TEXAS 75222
4-269
TYPE 2N3819
N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR BULLETIN NO. DL-S 688047. AUGUST 1965-REVISED MAY 1968
SILECTt FIELD-EFFECT TRANSISTOR* •
For Industrial and Consumer Small-Signal Applications
•
Low C rss:
io kn lOkn/pN
INPUT
O— HVyVfj «*W
INPUT
n
I
i
JL. OUTPUT
TEST CIRCUIT
VOLTAGE WAVEFORMS FIGURE 1-DELAY AND RISE TIMES
10
to
500ms -)*.+9.1
INPUT
•—O OUTPUT io
V
-10.9
V
kn
INPUT O-^VW
:;
1N916
c
T < 4 pf
/
1N916
TEST CIRCUIT
90%ir
OUTPUT
J
10%
VOLTAGE WAVEFORMS FIGURE 2-STORAGE AND FALL TIMES
NOTES:
a.
b.
The Input waveform, are .upplled by a generator with the following characterise.: Z out - SO Jl, duty cycle - 3%. Waveform, are monitored on an oicllloicope with the following characteristic.: - 10 MO, C t r < 1 n., R ln ln < 4 pF.
PRINTED IN U.S.A.
1-288
Texas INCORPORATED Instruments foit ofpioi eox boh
•
salla*. tixai 7ms*
Tl
conn.l oilume any rtipoftiibilily lor ony tircuilt ihown
or
f.pr.itnl
lhar
Ihiy
on
frit
373
Irom pottnl infringomtnt.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANT TIME ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT POSSIIU.
IN
TYPES 2N3909, 2N3909A P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BULLETIN NO. DL-S 6810916, SEPTEMBER 1S68
ELECTRICALLY SIMILAR TO 2N2386 AND 2N2386A FOR AUDIO- TO HIGH-FREQUENCY SMALL-SIGNAL AMPLIFIERS 2N3909A offers greatly improved |y h /C m ratio |
resulting from process innovation:
•
|yh
|
• C„,
Min Raised from
Max Lowered
1
mmho
mmho
to 2.2
from 16 pF to 3 pF
'mechanical data
THE ACTIVE ELEMENTS ARE
m-
ELECTKICALLY INSULATED
-T-
I
Q.HQ
cm
U~
FROM THE CASE
Lawoj
ALL
JEMC
AM
NOTES ARE APPLICABLE
-L I
'absolute
maximum
T0-7J DIMENSIONS
ratings at 35*C free>alr temperature (vnlttif otherwise noted)
-20 V -20 V
Drain-Gate Voltage Drain-Source Voltage Reverse Gate-Source Voltage Continuous Forward Gate Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note Storage Temperature Range Lead Temperature K« Inch from Case for 10 Seconds * electrical characteristics
20
-10
300°C
2N3909A 2N3909 UNIT MIN MAX MIN MAX
TEST CONDITIONS):
V(t*iess
Gate-Source Breakdown Voltaje
less
Gats Reverse Currant
Vesfoff)
Gate-Source Cutoff Voltage
Ves
Gate-Source Voltage
loss
Zero-Gate-Voltage Drain Current
M
Forward Transfer Admittance
mA, V m = = 10 V, VM = Ves = 10 V, V M = 0, Vos = -10 V, D = -10 juA Vos = -10 V, Id = -30 juA V DS = -10 V, V„ = ¥„s = -10 V, Ves = 0, 1,
=10
10
Output Admittance
Vos
=
-10
Ves Common-Source
C.
tad (cau)
•Indlcom JEDEC
=
Vos
Forward Transfer Admittance
»
175*C fru.alr iMiporolun ol connocta
to too
Hum
=
loo rata of
S
=
-10
V,
V ss
=
f»*
V V
7.9
0.3
7.9
-0.3
-15
-1
-15
5
2.2
5
mmho
0.1
0.1
mmho
32
9
Pf
H
3
PF
lldta
Short-Circuit
Small-Signal Common-Source
it
1
8
mA
0,
Reverse Transfer Capacitance
M Dinta Hourly
1
8
nA
0.3
V,
Input Capacitance
1.
100'C
1
f
Short-Circuit
c...
faurHi
=
¥ 10
Small-Signal Common-Source
Common-Source
tTho
TA
l
Small-Signal Common-Source
20
20
Ves
NOTE
300 mW — o5"Cto200*C
1)
at 23°C free-air temperature (unless otherwise noted)
PARAMETER
W
V
mA
0,
f
=
lMNz
f
=
10 MHi
0.9
2
mmho
mW/*C.
for all RM«wrMiilnti.
roglittrod dol«
USES CHIP JP71 PRINTED IN U.S.A.
373
Instruments TexasINCORPORATED TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
POST OFPICI BOX SOU
•
DALLAS, TEXAS 70223
TYPES 2N3962 THRU 2N396S P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 679S63, FEBRUARY 1967
FOR LOW-LEVEL, LOW-NOISE, HIGH-GAIN, SMALL-SIGNAL AMPLIFIER APPLICATIONS • Guaranteed
Iife
M A, Ta
at 10
= - 55°C and 25°C
• Guaranteed Low-Noise Characteristics at 20 /*A
"mechanical data
THE COLLECTOR IS III ELECTRICAL CONTACT WITH THE USE ALL JEDEC TO-U DIMENSIONS
AND NOTES AIE AWLICAHE
"absolute
maximum
ratings at 25"C frM-alr temperature (unless otherwise noted)
2N3962 2N396S 2N3963 2N3964
Emitter-Base Voltage
-*0V -60V -oV
Continuous Collector Current
-<
Collector-Base Voltage Collector-Emitter Voltage (See
Note
1)
Continuous Device Dissipation at (or below) 25
S
C Free-Air Temperature (See Note 2)
Continuous Device Dissipation at (or below) 25*C Case Temperature (See Note 3)
NOTES:
-< -«
Lead Temperature K« Inch from Case for 60 Seconds
-<
valim apply batwitn 10
and 5
mA
collKtor currant wh*n Hi* oait-amiltir (Hod*
1.
Tfcasa
Dtratt llntorly lo 200°C frM-alr ftmparatur* at thi rata of 2.04
3. Parol* linoarly to
4-290
-4
Storage Temperature Range
2.
•Indlcafn
.
— — — — —
JEMC
/ilk
200°C cata tamparatura
at Iha rata af d. — —
65°C to 200°C 300°C
>-
>-
->-
>-
apan-clrcBltid.
1.
Flaara 2.
raajstarad data
USES CHIP PIS
Instruments TexasINCORPORATED POftT OPPICI BOX.
Mil
•
DALLAS, TEXAS 7MS«
TYPES 2N3962 THRU 2N3965 P-N-P SILICON TRANSISTORS
'electrical characteristics at
25°C free-air temperature (unless otherwise noted)
PARAMETER V [!R|CK>
Collector-Base Breakdown Voltage
V (BR,CEO
Collector-Emitter Breakdown Voltage
V |B».|CES
Collector-Emitter Breakdown Voltage
V |BR|EBO
Emitter-Base Breakdown Voltage
c = -10 pA. E = c = -5 mA, 1, = c = -10m».V,e=0 = -10 c = E yC. = -40 V, E = V c , = -50 V. E = V c ,= -70 V, E = V CE = _40V,V E ,= V CE = -50V,V E , = vE , = o v ra = -70 v CE = -40v.v E , = »CE = -50V,V E , = ~ »CE = n »• »EB = • • »E. = ~* V>C = »a = "5 » 'c = -1 V CE = -5 V, c = -10 „A - » 'c = -'» »CE = V CE = -S V, c = -100 V CE = -5 V, c = -1 mA V CE = -5 V, c = -1 mA VCE = -S V, c = -10 mA, V CE = -5 V, c = -50 mA, V CE = -S V, c = -50 mA, l
2N3962
CONDITIONS
TEST
MIN
I
0,
l
See Note 4
l
iik,
l
l
2N3963
2N3964
Collector Cutoff Current
-to
-45
-40
-40
-40
-45
-40
V
-40
-to
-45
-40
V
-a
-4
-a
-4
Emitter Cutoff Current
'ebo
-10
Static Forward Current
«
-10
T
=
A
Base-Emitter Valtage
*BE
Collector-Emitter
"cElsetl
Saturation Voltage
l
l
u
to 100
=
T,
-5S«C
300
=
450
250
500
250
250 450
100
250
600
800
l
See Nate 4
100
100
200
200
l
See Note 4
90
90
180
180
45
45
90
T
A
=
800
too
600
600
250
TA
100°C
500
250 100
100
100
100 100
300
100
nA
180
110
40
40
!»»
-10
-10
-10
-10
—S5°C.
1,
See Note 4
1,
l
M
-10
-10
= -OS mA = -5 mA 1, = -0.5 mA = -5 mA
c
/»
-10
150»C
See Note 4
= -10 mA, c = -50 mA, c = -10 mA, c = -50 mA,
l
nA
-10
l
l
nA
-10
l
Transfer Batio
nA
-10
fiA
l
h
nA
-10
l
A«».
nA
-10
/ 100 kO, C| < 7 pF. r n n
raglttarad data
PRINTED IN U.S.A.
4-304
Texas INCORPORATED Instruments poeT ofpicb box soia
•
DALLAe. TixAe Tiaaa
Tl
(anntt tuufflt
tnjf
tf
rtprmnt
thty
thai
rffpoftiibitlty
trt
Irti
ft(
srtr
circuill
3?
fhewn
Irtm ptttnt inlrintimtnt.
MY
TEXAS INSTRUMENTS RESERVES THE R.6NT TO MAKE CHANGES AT TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE REST PRODUCT FOSSIME.
TYPES 2N4026 THRU 2N4033 P-N-P SILICON TRANSISTORS BULLETIN NO. DLS 7311982, MARCH 1973
MEDIUM POWER P-N-P TRANSISTORS FOR COMPUTER MEMORY APPLICATIONS
'
•
Increased Dissipation at 25° C Case Temperature ... 10
•
High
V(BR)CEO
80
.
V
W Max (2N4030 thru 2N4033)
Min (2N4027, 2N4029, 2N4031, 2N4033)
mechanical data 2N4026
THE COLLECTOR
THRU 2N4029
ELECTRICAL CONTACT WITH THE CASE
IS IN
ALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE*
D
2N4030 THRU 2N4033
THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
All DIMENSIONS IN INCHiS
AH
UNLISS OTHHWIif SKCIFIID
ALL JEDEC TO-39 DIMENSIONS AND NOTES ARE APPLICABLE*
maximum
absolute
ratings at 25° C free-air temperature (unless otherwise noted)
2N4026 2N4027 2N4030 2N4031 UNIT 2N4028 2N4029 2N4032 2N4033 -80* -60* -60* -80* -80* -60* -60* -80* -5* -5*
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25 C Free-Air Temperature (See Note 2) Continuous Device Dissipation at Case Temperature (See Note 3)
(or
below) 25
C
1
.
Thete valuM apply
bimwi 200° C
0.5*
0.8*
2*
-65 to 200* 300*
Lead Temperature 1/16 Inch from Case for 60 Seconds 2. Oarata linearly to
-1"
W
10t
Storage Temperature Range
NOTES:
-1*
w
4*
-65 to 200* 300*
mA
collector currant whan tha baaa-amlttar dioda It opan-clrcuitad. and 10 fraa-alr tamparatura at tha ratat of 2.86 mW/°C for 2N4026 through 2N4029 and
2N4030 through 2N4033. Darata linearly to 200° C casa tamparatura at tha following ratat: 11.4 mW/°C for tha 2-watt rating, 57.1 and 22.8 mW/°C for tha 4-watt rating. *Tha JEDEC raglttarad outline for thata devlcet It TO-B. TO-39 fallt within TO-6 with tha exception of lead length. 'JEDEC reglttered deta. Thlt data theat contalnt all applicable regltterad data In effect at tha time of publication. f Thit value It guarenteed by Taxat Inttrumentt In eddltlon to the JEDEC reglttered value which It alto thown. 3.
4.S6mW/°C
mW/ C for
tha
1
for
0-watt
rating,
USES CHIP P16
Instruments Texas INCORPORATED »»OST OPPICI
BOX
BO 12
•
DALLAS, TEXAS 76882
4-305
TYPES 2N4026 THRU 2N4033 P-N-P SILICON TRANSISTORS 'electrical characteristics at
25° C free-air temperature (unless otherwise noted
PARAMETER
TEST CONDITIONS
2N4026
2N4027
2N4030
2N4031
v (BR)CEO v (BR)EBO
ICBO
Collector-Base l
Breakdown Voltage
c = -10uA.
-10mA,
Collector-Emitter
IC =
Breakdown Voltage
See Note 4
Emitter-Base
Breakdown Voltage
-10uA,
lE =
E =
lB-0.
ic =
o
V CB --50V,
lE-0
V C B - -60 V,
l
Collector Cutoff
VCB
V,
e-o.
Current
TA
-60 V,
Ie-o,
TA Emitter Cutoff Current
-50
=
-60
-80
-60
-80
V
-60
-80
-60
-80
V
-5
-5
-5
-5
V
-50
Static
Forward Current
Transfer Ratio
-
=
-50 -50
lc =
-100 mA
V CE
*"A
-10
ic = o
IC--100(iA
-
-6
-50
-10 30
120
40
-10
-10
75 120
100
"A
75
300
100
300
V,
-100 mA, T A - -55°C V CE = -5V,
I
C=
-1A
l
B=
-15mA,
15
15
40
40
25
25
70
70
15
10
40
25
See Note 4
c = -SOOmA
V CE
30
40
IC =
lc- -150 Base-Emitter Voltage
nA
-50 -50
V C E--5V.
VBE
-50
150°C
V E B--5V, V C E = -5V,
l
MAX MIN MAX
-50
E =
V C £=-5V,
hFE
UNIT
MAX MIN
= 150°C
VCB 'EBO
l
2N4029 2N4033
MIN
MIN
v (BR)CBO
MAX
2N4028 2N4032
mA
-0.9
-0.9
-0.9
-0.9
-1.1
-1.1
-1.1
-1.1
" -0.5 V. See Note 4
-500 mA V C E - -1 V, IC -
-1.2
C--1 A B --15mA, IC" -150mA
V
-1.2
l
VcE(sat)
Collector-Emitter
IB "
Saturation Voltage
|
-0.15
-0.15
-0.15
-0.15
-0.5
-0.5
-0.5
-0.5
—50 mA, See Note 4
c = —SOOmA IB" —100 mA, IC
1
-1
V
-1
A
Small-Signal
Ne|
Common-Emitter
V CE
Forward Current
f
"
= 100
-10
V,
l
c = —50 mA, 1
MHz
4
1
4
1.5
5
1.5
5
Transfer Ratio
Ccb
Collector-Base
V CB --10V,
Capacitance
f
Common-Base
c ibo
Open-Circuit
-
1
V EB f
-
1
MHz,
E -0, See Note 5
- -0-6 V,
ic = o,
l
MHz
20
20
20
20
pF
110
110
110
110
pF
Input Capacitance
NOTES:
These parameters must be measured using pulse techniques, t^, - 300 ,us, duty cycle < 1%. C cb measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter guard terminal of the bridge. 4. 5.
•JEDEC
4-306
registered data
Texas INCORPORATED Instruments POST OFFICE BOX SO 12
•
DALLAS, TEXAS 75222
is
connected to the
I
TYPES 2N4026 THRU 2N4033 P-N-P SILICON TRANSISTORS switching characteristics at 25° C free-air temperature
PARAMETER
*
ton
Turn-On Time
V CC
tj
Storage Time
l
tf
Fall
Time
B(1
MAX
TEST CONDITIONS'* -30 V, lc - -600 mA, = -50mA, B (2)=50mA,
)
l
VBE(off)
=38
v
-
Sm
-
F '9 ure
UNIT
100
ns
350
ns
50
ns
-
1
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. registered data
•JEDEC
PARAMETER MEASUREMENT INFORMATION -30 V
n
O OUTPUT INPUT
-9.7
V
r
I
r*~
O
INPUT
J
ton*!
-«off"
I
jr— I
I
I
D
I
90%
90% 10%
(See Notes a and b)
VOLTAGE WAVEFORMS
TEST CIRCUIT NOTES:
The Input waveform
a.
b.
is
supplied by a generator with the following characteristics:
Z out - 50
fi, t r
< 20
ns, tf
< 20
ns, t^, *>
10
MS,
< 2%.
duty cycle
Waveforms
are monitored
on an oscilloscope with the following
characteristics: t r
«
10
ns, Rj n
> 100 kO.
FIGURE 1-500-mA SWITCHING TIMES
THERMAL INFORMATION 2N4026
\ .
2N 4030 THRL 2N4I I33
V 2N4 28 T HRU N40
SO
75
100
1 a
2
8
1.6
DISSIPATION DERATING
i
\i IGuarantw
1
1.2
8
»•»
125
>S
150
JEDEC
s
1
175 200
n
1
26
50
75
100
126
150
25
175 200
c
TA-Frw-Air Temperature—"C
60
~*
Registered
!
75
1
100
125
160
175
200
Tq—Case Teitiparaturt—°C
Tc-Ca*B Temp«feture- C
FIGURE 4
FIGURE 3
FIGURE 2
'3
xl
E
9^ ^N
5
2W030 THRU 2N4033 CASE TEMPERATURE CURVE
THRU 2N402S
CASE TEMPERATURE DISSIPATION DERATING CURVE
FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE
PRINTED IN U.S.A. Tl
cannot ossume any responsibility
or
represent
thai
they
ore
free
for
any circuits shown
from patent infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME POSSIBLE. IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS, TEXAS 7S222
4-307
TYPES A5T4026 THRU A5T4029, A8T4026 THRU A8T4029 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7312002, MARCH 1973
SILECTt TRANSISTORS* FOR GENERAL PURPOSE APPLICATIONS High
V(BR)CEO
.
.
.
80
V Min (A5T4027, A5T4029, A8T4027, A8T4029) 1 A
High Current Capability ...
Rugged One-Piece Construction with In-Line Leads or Standard TO- 18 100-mil Pin-Circule Configuration
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. This case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting
MIL-STD-202C, Method 106B. The transistors are insensitive to A5T4026 THRU A5T4029
light.
A. Lead diametsr is not controlled in this area. B. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.054 below the seating plane of the device relative to a maximum-diameter peckege. C. All dimensions are in inches.
A8T4026 THRU A8T4028 -•4
|«- 0.0S0 (NOT! A)
qjr
^™ -aoao -T|
f
0.050* 0.005 J
EBC
ALL JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE NOTES:
maximum
absolute
A. Lead diameter is not controlled B. All dimensions are In inches.
in
this area.
ratings at 25° C free-air temperature (unless otherwise noted)
AST4026 A5T4028 A8T4026 A8T4028 -60 V -60 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage
-5V
Continuous Collector Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note Continuous Device Dissipation at (or below) 25°C Lead Temperature (See Note 3) Storage Temperature Range Lead Temperature 1/16 Inch from Case for 10 Seconds ES:
1
.
2. 3.
A5T4027 A5T4029 A8T4027 A8T4029 -80 V -80 V
«i
2)
625
.
.
-5V 1
A-
»
mW
»
e. 1.25W «--65°C to 150°C* -ei
+
260°C
»»
and 10 mA collector current when the base-emitter diode is open-circuited. to 150°C free-air temperature at the rate of 5 mW/°C. to 150°C lead temperature at the rate of 10 mW/°C. Lead temperature is measured on the collector lead 1/16 Inch
These values apply between Derate linearly Derate linearly
from the
case.
t Trademark of
Texas Instruments tu.S. Patent No. 3,439,238
USES CHIP P16
4-308
Texas INCORPORATED Instruments POST OFFICE BOX B012
DALLAS. TEXAS 75222
TYPES A5T4026 THRU AST4029. A8T4026 THRU A8T4029 P-N-P SILICON TRANSISTORS electrical characteristics at
25° C free-air temperature (unless otherwise noted)
PARAMETER
A5T4026 A8T4026
TEST CONDITIONS
MIN CollBctor-Base
V(BR)CBO Breakdown
Collector-Emitter
V(BR)CEO Breakdown
l
C --10uA.
I
c
Voltage
Voltage
-
_10mA,
Collector Cutoff
>CBO
Current
Emitter Cutoff Current
'EBO
Static
"FE
Forward Current
Transfer Ratio
-0
lB-0,
UNIT
MAX MIN MAX MIN MAX MIN MAX
-60
-80
-60
-80
V
-60
-80
-60
-80
V
-5
-5
-5
V
See Note 4
Emitter-Bate
V(BR)EBO Breakdown Voltage
E
l
A5T4029 A8T4029
A5T4028 A8T4028
A5T4027 A8T4027
lE--10(iA.
ic-o
VC b -
l
-SO V,
Vcb--60V. V C B - -BO V. TA = 100°C V C B - -60 V. T A -100°C V EB --5V. V CE --5V. VCE--5V. IC- -100mA VCE--5V.
l
l
-5
E -0 E -0
-50
-50
-50
E -0.
-5
nA
-5 MA
lE-0.
-5
-5
ic-o c --100«A l
-10
IC- -100 mA,
120
40
-10
-10
-10 30
30 40
T A - -55°C VcE " -5 V,
120
100
«A
75
75
300
100
15
15
40
40
25
25
70
70
15
10
40
25
300
See Note 4
IC--500mA VCE--5V, IC--1 A l
-50
B = -15 mA,
-0.9
-0.9
-0.9
-0.9
-1.1
-1.1
-1.1
-1.1
IC--150mA V BE
Base-Emitter Voltaoe
Vce
- -0.B V,
IC -
-500 mA
See Note 4
vce- -iv. •C--1 A
Collector-Emitter
B --15mA, IC--150mA lB"-50mA,
VCE(sat)
Saturation Voltage
IC -
See Note 4
-500 mA
IB- -100mA, IC
1
-1.2
-1.2
l
V
-0.15
-0.15
-0.15
-0.15
-0.5
-0.5
-0.5
-0.5
-1
V
-1
A
Small-Signal
Ne|
-10 V.
Common-Emitter
V C£
Forward Current
f- 100 MHz
-
|
c --S0mA,
1
4
1
4
1.5
5
1.5
5
Transfer Ratio
Ccb
Collector-Base
V CB --10V,
Capacitance
f
Common-Base Open-Circuit
Cibo
»
1
MHz,
l
E -0,
V EB --0.5V. ic-o, f
-
1
20
20
20
20
pF
110
110
110
110
pF
See Note 5
MHz
Input Capacitance
NOTES:
t w •= 300 Ms, duty cycle < 2%. measurement employs e three-terminal capacitance bridge incorporating a guard circuit. The emitter
4.
These parameters mutt be measured using pulse techniques.
5.
Cct,
is
connected to the
guard terminal of the bridge.
Instruments Texas INCORPORATED i*OST OFFICE
BOX 5012
•
DALLAS. TEXAS 75222
4-309
TYPES A5T4026 THRU A5T4029, A8T4026 THRU A8T4029 P-N-P SILICON TRANSISTORS switching characteristics at 25° C free-air temperature
PARAMETER
f
ton
Turn-On Time
V CC
tg
Storage Time
Ib(1)
tf
Fall
Time
MAX
TEST CONDITIONS'' -30 V, lc - -500 mA, = — 50 mA, 'B(2I * 50 mA,
=
v BE(off
* 3.8 V,
I
See Figure
UNIT
100
ns
350
ns
50
ns
1
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PARAMETER MEASUREMENT INFORMATION +3.8
V
-30 V
O 560
OV
« -O OUTPUT
-9.7
r
j.
V
10>iF
i
i
i
i
-
"It"
I
-
< 20 100
ns, tf
< 20
ns, t
w
«*
10
jus,
kft.
FIGURE 1-500-mA SWITCHING TIMES
THERMAL INFORMATION FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE
LEAD TEMPERATURE DISSIPATION DERATING
5
5
E
E c
I
1
700
1400
Hon
Q
I 5
1200
8
500
8
1000
•»
>
N
40P 300
o
O E
Q 800
\V
200
o
3
\
E X CO
CURVE
1600
100
\
S I
n 25
50
75
100
C
600
E 3 E
400
oO
K V
125
CO
200
£ 1
r-
150
25
TA-Free-Air Temperature— °C figure 2
50
75
100
125
150
T|_-Lead Temperature— °C
figure 3 PRINTED IN U.S.A.
4-310
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
Tl
cannot assume any responsibility for any circuits shown
or
represent
that
they are
free
from
patent
37
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N40S8 THRU 2N4062, AST4058 THRU A5T4062, A8T4058 THRU A8T4062 P-N-P SILICON
TRANSISTORS
BULLETIN NO. DL-S
731 1962,
MARCH
1973
SILECT* TRANSISTORS* •
Low-Level Amplifier Applications
Ideal for
Rugged One-Piece Construction with In-Line Leads or Standard TO- 18 100-mil
•
Pin-Circle Configuration
Recommended for Complementary Use with 2N3707 A5T3711, or A8T3707 thru A8T3711
•
thru
2N371 1 A5T3707 ,
thru
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting Ml L-STD-202C, Method 106B. The transistors are insensitive to light.
THRU 2N4062. A8T4058 THRU A8T4062
2N4058
•ALL JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE —* p-
A8T4058
2N4058
o-oso {fton A)
™" - 0.M0 T
if
T~~
ffes
0.300
+ 0.003
thru
thru
2N4062
A8T4062
-0.029
i_ 3
NOTES:
A. B.
Lead diameter is not controlled dimensions are in inches.
thru
in this area.
LEAD
2N4062
A8T4058thru A8T4062
D
I
All
DEVICE 2N40S8
LIADS 0.017 IJooi
ECB 3
1
2
Emitter
Collector
Base
Emitter
Bate
Collector
A5T4058 THRU AST4062
3 LIADS
I
Lead diameter is not controlled In this area. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.054 below the seating plane of the device relative to a maximum-diameter package. C. All dimensions are in inches.
A. B.
absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
-30 V* -30 V* —6 V* -30 mA*
Collector-Base Voltage
Collector-Emitter Voltage (See Note Emitter-Base Voltage
1
)
Continuous Collector Current
Continuous Device Dissipation at
(or
below) 25°C Free-Air Temperature (See Note 2)
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
^
tbo w* 150°C* 260°C*
—65°C to
Storage Temperature Range
This value appliei whan the base-emitter diodB it opart-circuited. Derate the 625-mW rating linearly to 150°C free-air temperature at the rate of 5 mW/°C. Derate the 360-mW (JEDEC registered) 150°C free-air temperature et the rate of 2.88 mW/°C. 'The asterisk identifies JEDEC registered deta for the 2N4058 through 2N4062 only. This data sheet contains all applicable registered data in effect et the time of publicetion. tTredemerk of Texas Instruments tu.S. Potent No. 3,439,238 1.
2.
reting'tineerly to
§
Texes Instruments guarantees
this value In eddltlon to the
JEDEC
registered value
which
Is
also
Instruments Texas INCORPORATED POST OFFICE BOX S012
•
DALLAS, TEXAS 78133
shown.
USES CHIP P18
4-311
TYPES 2N4058 THRU 2N4062, A5T4058 THRU A5T4062, A8T4058 THRU A8T4062 P-N-P SILICON
TRANSISTORS
'electrical characteristics at 25° C free-air
PARAMETER
(BR)CEO
Collector-Emitter
IC -
BrMkdown V0 tBge
See Note 3
Collector Cutoff
Emitter Cutoff Current Stetlc
Forward Current
Transfer Ratio
Baie-Emitter Voltage
Vbje
-1 mA,
VCB--20V,
Current
lEBO
V EB
-
-6
V,
*
B
saturation voltage
Vce--5V,
Common-Emitter
f
-
1
2 2
|
Cc --100uA c --lmA
V CE --5V, f
-30
lc--1mA
3 88
UNIT
MAX MIN MAX
-30
-30
V
-100
-100
-100
-100
nA
-100
-100
-100
-100
-100
nA
400
-0.5
lc"-10mA
l
-30
§ 8 §
-100
100
45
660
46
165
90
330
180
660
-1 -0.5
-1
-0.5
-1
-0.5
-1
-0.5
-1
V
-0.7
V
-0.7
100
kHz
Forward Current
1
-0
-30
lc--100»iA,
Transfer Ratio
-
E
l
mA,
Small-Signal
"0,
l
V CE --5V, V CE --6V, V C E--5V, IB " -0.5
\g
l
Collector-Emitter
CE(wt)
2N40B8 z §§i 2N4060 2* A5T4058 ABT4060 zSb 2 A8T40B8 A8T4060 MIN MAX MIN MAX MIN MAX MIN
TEST CONDITIONS
|
hFE
temperature
-0.7
-0.7
-0.7
550
c --1mA,
45
kHz
800
45
250
90
450
180
800
'operating characteristics at 25° C free-air temperature 2N4058,
PARAMETER
TEST CONDITIONS
A5T4058, A8T4068
MIN F
Average Noise Figure
V CE --5V,
l
c --100uA,
R G = 5kfJ,
Noise Bandwidth - 15.7 kHz,
NOTES:
1.7
See Note 4
This parameter must be measured-using pulse techniques: tw - 300 Ms, duty cycle < 2%. Average Noise Figure Is measured in en amplifier With response down 3 dB at 10 Hz and 10 6 dB/octave. •The asterisk Identifies JEDEC registered data for 2N4058 through 2N4062 only.
TYP
UNIT
MAX 5
dB
3. 4.
kHz and
a high-frequency rolloff of
THERMAL INFORMATION DISSIPATION DERATING
3 £
CURVE
800
I
I
700
3
600
8
500
5
\ti
Guarant eed
400 300
oo E s
JEDEC
registe
ed^v
200
E '5 °°h
~~
2
v GS(off)
-* ton /•*, *off
INPUT
1
,
l*-H
«d(on)-H
-tdloff)
t|
10% o^fcl
171*10%
V
90%1«J_(J-»r 90%
OUTPUT o
^—
TEKTRONIX 567 (See Note a)
TEST CIRCUIT
NOTE
a.
An
PRINTED IN
3
Tl or
"L
2N4091
750
-12V
2N4092 1.54 kn 2N4093 3.16 kn
-7 V
used.
The
VOLTAGE WAVEFORMS
VGS(off)
n
may be
-5V
oscilloscope
FIGURE
must have
a
60-O input impedance.
2
U.S.A.
shown connol osjume any responsibility lor ony circuits represent Ihot they ore free from potent infringement.
MM
H
MH TIME OttHMS INSTRUMENTS RESERVES fflf RIGHT TO SUPPLY THE BEST PRODUCT POSSIBLE. ORDER 10 IMPROVE DESIGN AND TO
KXU IN
equivalent generator and oscilloscope
TYPE
Instruments Texas INCORPORATED !»OST OFFSCE
BOX
5012
•
DALLAS. TEXAS 75*22
4-315
TYPE 2N4KW N-P-N SILICON TRANSISTOR BULLETIN NO. OL-S 668315. JANUARY 1966
DESIGNED FOR USE IN LOW-LEVEL, LOW-NOISE
AMPLIFIERS • Guaranteed Low-Noise Characteristics at 10 Hi, 100 Hz,
I
kHz and 10 kHz
• Very High Guaranteed h FE at l
= 10 M A
c
:
400 Minimum
• High Rated V EB0 * mechanical
:
10
V
data
I
THE COLLECTOR
IS IN
ELECTRICAL
0.310
0.030
0.230
03W
I
CONTACT WITH THE CASE
_
-3-COUKTOt
am
AIL JEDEC TO-18 DIHENSIOHS AMD
0.171
NOTES ARE APf LICAUE
ML WMlmiONS AM IN INCHH UNUSS OTHtlWISI
SHCIFKD
* absolute
maximum
ratings at 25°C free-air temperature (unless otherwise noted)
^y
Collector-Base Voltage Collector-Emitter Voltage (See
Note
Emitter-Base Voltage
1)
...
[
Continuous Collector Current r Continuous Device Dissipation at (oi Delow) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) Storage Temperature Range
'
"
"
.... ....
Lead Temperature
K07ES,
•JEOEC
nloo oppli«
bttwm
%
Inch from
Case for 10 Seconds
1.
This
1.
Dirot. linrorly to 17S°t froo-oir lomporototo at tin tela of 2
3.
Dotolt lintofly to 17S°C
Collector Cutoff Currant
Ueo
Emitter Cutoff Current
Static
h*
Forward Current
Base-Emitter Voltage
V(E
See Mote 4
5V,
=
5V,
10=100/.*
V
H =SV,
Vce
= 0.1 mA,
1,
Saturation Voltage
Input Impedance
Vce
to
V
TA
=1$0°C
400
M*
10
nA
l
=
c
1
BOO
500
0J
V
0.3
V
12
42
kO
500
1400
mA
= 5V, =
c
mA,
1
BxlO" 4
Small-Signal Common-Emitter
Reverse Voltage Transfer Ratio f
= lWh
Small-Signal Common-Emitter
M
10
450
l
l
h
nA
ISO
I
Forward Current Transfer Ratio
h™
V 10
l
Small-Signal Common-Emitter
K
UNIT V
10
lc
Small-Signal Common-Emitter hi.
MAX
60
l
Vce = 5V, Vce = 5V,
Collector-Emitter
Vcei»t|
= 0.
V« =
E
Vce=5V,
Transfer Ratio
=
6
= E = U = 0. c= Ic = 1m* c = 10m* lc = 100/_A c = lmA
= 10fiA, V C e = 45V, V C e = 45V, l
Breakdown Voltage
MIN
CONDITIONS
TEST
PARAMETER
1
M
3
18
vjnko
Output Admittance Small-Signal Common-Emitter
M
Forward Current Transfer Ratio
Common-Base Open-Grcuft
u,
Output Capacitance
Common-Base Clbo
_____
Open-Circuit
Input Capacitance
Vce=5V,
l
c
=
0.5mA,
Vci=5V,
l
E
=
0,
V«
= 0.5V,
l
c
=
0,
f
=
f
= lWh
4.5
P'
f
= 1HHz
i
PF
30HHi
"operating characteristics at _5°C free-air temperature
Vce f
=
Vct f
Spat Noise Figure
NF
=
=
5V,
=
=
5V,
4: Tkli
pwmhr
•JEDEC ntlitl~l
mint bt
=
= 30/iA,
c
=
30mA,
R»
=
10kn,
lc
=
5i_A,
Re
=
50kn,
c
=
5/iA,
Re
= 50ka,
I
10kn,
MAX
I
15
100 Hz
kHz
1
Vci=5V, f
c
Rs =
10 Hi
Vce=5V, f
MOTE
MIN
TEST CONDITIONS
PARAMETER
l
10 kHz
m«—4 nln| -l» t«-l area. positions measured B. Lead! having maximum diameter (0.019) shell be within 0.007 of their true reletlve to e maxlmumIn the gaging plane 0.0B4 below the seating plane of the device dlemeter package. C. All dimensions ere In inches.
maximum
absolute
ratings at
25°C
free-air
temperature (unless otherwise noted)
2N412B 2N4126 A6T4125 A5T4126
" 30V
Collector-Base Voltage
!!
Collector-Emitter Voltage (See
-30 V*
Note!)
Emitter-Base Voltage
*
Continuous Collector Current
\M* 200
~ 25V I -25 V -4V*
mA"—
mWfl _, 1.310 mW*J 1625
Continuous Device Dissipation at
(or
below) 25°C Free-Air Temperature (See Note 2)
f-65°Cto150°C Storage Temperature Range
t-55 Cto135 C * 230°C*-
Lead Temperature 1/16 Inch from Case for 60 Seconds
uA and 200 mA
when the bese-emltter diode Is open-circuited. tempereture et the rata of B mW/°C. Derete the 310-mW (JEDEC registered) rating llneerlv to 13B°C free-elr tempereture at the rate of 2.B1 mW/°C. contains all applicable registered data In •The esterlsk Identifies JEDEC registered dete for the 2N412B and 2N4126 only. This data sheet effect at the time of publication. Trademark of Taxes Instruments. tu.S. Petant No. 3,439,238. USES CH |p p 1 g shown. iTexes Instruments guarantees these values In addition to the JEDEC registered values which are also
NOTES:
1
.
2.
These velues epply between 10 Derate the
626-mW
rating llneerly to
160°C
collector current
free-air
Instruments Texas INCORPORATED post of'ici eox aaia
•
dallm,
tum* 7U>i
4-321
'
TYPES 2N4125. 2N4126, A5T4125. A5T4126 P-N-P SILICON TRANSISTORS
•electrical characteristics at
25°C
free-air
temperature 2N412S
PARAMETER
TEST CONDITIONS
v (BR)CBO
Collector-Base
v (BR)CEO
Collector-Emitter
V (BR)EBQ
Emitter-Base Breakdown Voltage
Breakdown Voltage Breakdown Voltage
'CBO
Collector Cutoff Current
'EBO
Emitter Cutoff Current
"FE
Static
IC'-IOjuA, Ip" -1 mA,
l
E =
l
B-
Ie°-10mA,
l
c=
l
E =
Vcb--20V, VCE
* -1 V.
"BE
Base-Emitter Voltage
v CEIsat)
% - -5 mA,
Collector-Emitter Saturati on Voltage
lB*-SmA,
Forward Current Transfer Ratio Small-Signal
I
)
I
-50 -50
-50 ">A
50
See Note 3
-B0mA
150
360
120
25
60
c - -50 mA, See Note 3 C - -50 mA, See Note 3
-0.95
-0.95
-0.4
-0.4
200
480
Common-Emitter
hfe l
-25
-50
-2
'C * lc =
VCE'-'V.
Small-Signal
-30
See Note 3
ic-o
_VEBJ
Forward Current Transfer Ratio
MAX
MIN -30 0,
2N4126 A5T4126 UNIT MIN MAX -25
A5T4125
V CE
=
-10V,
V CE
=
-20V,
l
c =-2mA,
l
c = -10mA, f= 100 MHz
f-1kHz
50
Common-Emitter
Forward Current Transfer Ratio Transition Frequency
lc =
VCE°-20V.
-10mA,
See Note 4
2.5
200
MHz
250
Common-Base Open-Circuit
Cobo
VCB = -5V,
Output Capacitance
l
E *0,
= 100 kHz
4.5
4.5
pF
f- 100 kHz
10
10
pF
f
Common-Base Open-Circuit Cibo
Veb = -0-5V,
Input Capacitance
NOTES:
3.
These parameters must be measured using pulse techniques.
4.
To obtain
nfe =
fT ,
the
In,.
I
response
I.
t
Ic = 0,
w - 300
extrpol.ted ., the rat. of
duty cycle
(is,
-6 dB
< 2%.
per octave from
f
- 100
MHz
to the frequency at which
'
'operating characteristics at 25° C free-air temperature
PARAMETER
2N4125 A5T4125
TEST CONDITIONS
MIN NF
Average Noise Figure
V CE -_5V,
lc--100«A,
RG
Noise Bandwidth «
"
1
kn.
1
2N4126 A5T4126
MAX
MIN
UNIT
MAX
5.7 kHz,
dB
See Note 5
NOTE
B:
e NOiSe FigUre
dB7oc«a ve
•The
asterisk Identifies
JEDEC
" me8SUr8d
^ " mP "" er Wl,h '"*"""*
'"
registered data for the
switching characteristics at
25°C
free-air
Rise
'C ' -10 mA, RL = 275n,
Time Time Time
Storage Fall
^
"
1
° HZ
" nd 10
kHZ
a "d
""Hh-friu.ncy
rolloff of
6
only.
temperature
PARAMETER Delay Time
dOWn 3 dB
2N4125 and 2N4126
TEST CONDITIONS 1 B(1) - -1 mA, V BE(off) l
See Figure
TYP - 0.5 V,
1
13
IC"=-10mA, Ib(1) = -1 mA, B RL - 275 tl, See Figure 2 l
(
2) -
1
mA,
60 22
' hOWn "™ n ° m n "' eX,C, V " UM V* rV ,llghtlV wi,h tran » ls,or P««"f«. Nominal base current for delay and rl„ "1 T'T 'ttLT CalCU T"" " ,ed """* tHe m,n mUm «'" « V ts for storage and «.„ time, are Cculated using BE- Nomina, base c the max ,1m v.,u"
322
'
1
'
Texas INCORPORATED Instruments POST OFFICE »OX S012
.
DALLAS. TEXAS 78222
TYPES 2N4125. 2N4126. A5T4125, A5T4126 P-N-P SILICON TRANSISTORS PARAMETER MEASUREMENT INFORMATION
+0.5
V-
-10.6
V-
t
275
n
<
1
-300 ns-
ns
-O OUTPUT INPUT O
lOkn/p^N
i
CT -
mW > 600 mW —>300
-65°C to 200°C 300°C
^
onon-
/h-^t *-Hv "Jl \»j
SEE NOTE
I
f
f
J
>"—
:
L2:
1
1
/2 T,
3
1
/2 T,
1 1
/4
1
14"
wire, 3/8"
T from
I
I
o) \f (V_^
T
^jRl-IOpF
TO MR DETECTOR
I
—
'
1
#20 #18 tinned
tapped at
1/ ,
COIL INFORMATION: tinned wire,
»
1
I
-if
L1
•
31
j
RFC
(
0.47 tiH
D, 3/8" length
D,
1
/2" length
drain.
0.001
»F
|o01uF
NOTE
3:
FIGURE 1-NOISE FIGURE AND POWER GAIN TEST CIRCUIT Is 1 kn et 200 MHz.
Transformed equivalent source resistence (Rq')
PRINTED IN U.S.A. tsroisl
or
ftprsiinl
thol
Ihey
riipwiiioillly
on
free
for
Irsei
any cIkuIIi itiown
poltnt
Inlrlnjtnwit.
TIME INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY POSSIBLE. ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT
MAS N
swims »ny
Tl
Instruments Texas INCORPORATED POST OPFICi eOX S01S
•
DALLAS, T1XAS TSSS1
4-329
TYPES A5T4248, A5T4249. A5T4250 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7311972, MARCH 1973
SILECT t TRANSISTORS* FOR LOW-LEVEL, LOW-NOISE AMPLIFIER APPLICATIONS h f E Guaranteed at
>
Low
'
Noise Figure
.
1
00 n A
.
.
2 dB
Plug-In Replacements for
>
Max (A5T4250)
2N4248, 2N4249, 2N4250 (TO-106)
mechanical data These transistors are encapsulated
in
a
plastic
compound
specifically designed for this purpose, using a highly
developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting
mechanized
process
Ml L-STD-202C, Method 106B. The transistors are insensitive to
light.
T~ o.aoo,,
*0.0O5
0.160
f 0.010
J_ 3UMDS
0.1B5.
*0.0M
-
A. Lead diameter B.
it
3-COlUOOK
not controlled In this aroa.
Leads having maximum diameter (0.019) shall bo within 0.007 of tftolr truo positions moaturod in tha gaging piano 0.054 bolow the sooting piano of tho dovko rolativo to
a maxlmum^iamttar package. C.
absolute
maximum
All
dimensions are
in inches.
ratings at 25° C free-air temperature (unless otherwise noted)
Emitter-Base Voltage
A5T4248 A5T4250 -40 V -40 V -5 V
Continuous Collector Current
«•
Collector-Base Voltage
Collector-Emitter Voltage (See Note
Continuous Device Dissipation at
(or
1)
•»
Storage Temperature Range
•»
Lead Temperature 1/16 Inch from Case for 10 Seconds
*
1
.
2.
mA——»
•» 625 mW 65°C to 150°C—•»
260° C
•»
valu« apply when the base-emitter diode is open-circuited. Derate linearly to 150°C free-air temperature at the rate of 5 mW/°C.
That*)
Trademark of Texas Instruments $U.S. Patent No. 3,439,238
4-330
-5 V
100
below) 25°C
Free-Air Temperature (See Note 2)
NOTES:
A5T4249 -60 V -60 V
USES CHIP P18
Instruments Texas INCORPORATED POST OFFICE BOX B012
•
DALLAS, TEXAS 7S222
TYPES A5T4248, A5T4249. A5T4250 P-N-P SILICON TRANSISTORS electrical characteristics at
25° C free-air temperature
l
v (BR)CEO
Collector-Emitter
Breakdown Voltage
V(BR)CES
Collector-Emitter
Breakdown Voltage
v (BB)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector Cutoff Current
'ebo
Emitter Cutoff Current
Static
"FE
Forward Current Transfer Ratio
c
=
—5 mA,
A5T4250
A5T4249
A5T4248
TEST CONDITIONS
PARAMETER
MIN
MAX MIN
MAX MIN
UNIT
MAX
ib =
o.
-40
-60
-40
V
VBE
=
-40
ic = o
-5
-60 -5
-40 -5
V V
See Note 3 l
c =-10uA,
E = -10(iA. V C B - -40 V, l
V EB V CE
-3 V. -5V.
= =
V CE --5V, V C E - -5 V,
l
E
=0
l
C
=
-10 -20
-10 -20
300
nA nA
-10 -20 250
IC=-100»iA
50
100
IC--1 mA IC"-10mA,
50
100
250
50
100
250
700
See Note 3
B - —0.5
l
VB E
Base-Emitter Voltage
VcE(sat)
Collector-Emitter Saturation Voltage Small-Signal
h| e
|
c
=
c
=
-10 mA,
-0.9
-0.9
-0.9
V
-0.25
-0.25
-0.25
V
See Note 3
IB- -0.5 mA,
l
-10mA,
See Note 3
Common-Emitter
2.5
17
6
550
250
20
kfl
Input Impedance Small-Signal
h fe
h re
Common-Emitter
Forward Current Transfer Ratio
V CE
Small-Signal Common-Emitter
f
-
1
-5
=
V,
c
l
- -1
mA,
50
1000
100
Small-Signal
10-"
Common-Emitter
5
800
B
lOx 10-4
10x
kHz
Reverse Voltage Transfer Ratio
h oe
40
5
50 umho
Output Admittance Small-Signal
"hfe
mA,
Common-Emitter
1
Forward Current Transfer Ratio
Common-Base Open-Circuit
c obo
Output Capacitance
Common-Base Open-Circuit
c ibo
Input Capacitance
-5V, c = —0.5 mA, MHz V C B - -5 V, E = 0, f - 1 MHz V E b - -0.5 V ic-o. f = 1 MHz
V CE f
=
l
2
2
2.5
- 20
l
6
6
6
pF
16
16
16
PF
operating characteristics at 25° C free-air temperature
V CE F
Spot Noise Figure
V CE V CE
F
=
-5V,
R G = lOkJJ,
Rq= Average Noise Figure
A5T4248 MIN MAX
TEST CONDITIONS
PARAMETER
" 1
=
-5
V,
kn,
-5V,
l
f
c =
= 1
lc f
=
1
A5T4250
A5T4249
MIN
MAX MIN
UNIT
MAX
-20uA, 3
2
3
2
3
2
kHz
dB
-250 uA, kHz
lc = -20(lA,
R G = 10kfi,
dB
Noise Bandwidth - 15.7 kHz,
See Note 4
NOTES:
3. 4.
These parameters must be measured using pulse techniques. t w = 300 M s duty cycle < 2%. Average Noise Figure is measured in an amplifier with response down 3 dB at 10 Hz and 10 kHz and a high-frequency 6 dB/octave. .
roll-off of
PRINTED IN U.S.A.
Instruments Texas INCORPORATED EXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME N ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
POST OFFICE BOX 5012
DALLAS, TEXAS 75222
4-331
TYPES 2N4252, 2N4253 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 668575, APRIL 1966
HIGH-FREQUENCY TRANSISTORS FOR
TUNER AND IF-AMPLIFIER STAGES
FM AND AM/FM
IN
STEREO-MULTIPLEX RECEIVERS
'mechanical data
•m«
THE ACTIVE ELEMENTS ARE ELECTRICALLY INSULATED FROM ARE
m INCHES
THE CASE
JNLESS OTHERWISE 0^30 Q3S0 DIA
o.iee 0.178
SPECIFIED
DIA
ALL JEDEC TO-72 DIMENSIONS
Lojoo J ~ MIN ^
AND NOTES A«E APrLICAILE
I
'absolute
maximum
ratings at
25°C
free-air temperature (unless otherwise noted)
V V 4V
30
Collector-Base Voltage Collector-Emitter Voltage (See
Note
18
1)
Emitter-Base Voltage
50 mA 200 —o5 C to 200 C
Continuous Collector Current
Continuous Device Dissipation at (or below) 25 °C Free-Air Temperature (See Note 2)
.
.
Storage Temperature Range
.
mW
.
300°C
Lead Temperature X. Inch from Case for 10 Seconds 'electrical characteristics at
25°C
PARAMETER
c = 10 /iA, c = 2 mA, = 10 /*A, E Vci = 15V,
Collector-Emitter
V|ir)eio Emitter-Base
Breakdown Voltage
Collector Cutoff Current
h re
Static
i.
'
Forward Current Transfer Ratio
Forward Current Transfer Ratio Collector-Base Capacitance
Ccb
Shorl-Circuit
10 V,
Vce
=
10 V,
lc
Vci
=
10 V,
l
nine
applies
Time Constant
*«>
baiwmlttfr dlodo
e= Vc . = VC
Output Resistance
Collector-Base
'Cc
l
=
TA
6
=
2 mA, 0,
=
V
18
V
4
4
85°C
5
f
=
100 MHz 1
V 50
nA
5
M*
30
150
6
14
6
14
0.1
0.45
0.1
0.45
MHz,
l
Doroto linioTlr to 17S°C froo-olr tompiritwo ol Hi. toll of 1.33
Thno poramottrs most bo moawroa
(King pulso tochniquos.
moowrad Ming
2mA,
f
=
E
10 MHz
=
-2 mA,
f
=
79.8
kH
50
MHz
12
PF
12
|K
opM-cireuitod.
3.
is
=
c
UNIT
18
50 f
MAX
30
50
l
=
MAX MIN
30
l
10 V,
2.
is
See Note 3
l
l
This
Copotllonto
l
10V,
1.
4. Colloctor-lflM
•JEDEC
=
MIN
See Note 4
Parallel-Equivalent Common-Emitter
"*"
HOTSS:
15 V,
Vet
l
Small-Signal Common-Emitter
1
•*'
rb
Vc.=
l
Breakdown Voltage
Icto
E = 1, = 0, c = E = E = 0, c = 2 mA
l
2N4253
2N4252
CONDITIONS
TEST
V(mi)ck> Collector-Base Breakdown Voltage
Vikiceo
temperature (unless otherwise note d)
free-air
t
mW/"C.
=
300
/it,
duty cyclo CEV
VBE
Forward Current Transfer Ratio
Base-Emitter Voltage
l
Collector-Emitter Saturation Voltage Small-Signal
Nel
Common-Emitter
Forward Current Transfer Ratio
«T
Transition Frequency
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
lE =
-10»iA.
V CE
- -10 V,
ic-o V B E = 2V V B £ = 0.4 V V BE = 2V. V BE - 2 V
V CE = -5V, V CE - -10 V, V CE = -10V, V CE =-1V. V CE - -1 V, V CE = -2V. V CE = -1 V, V CE =-1 V,
Collector-Base
NOTES:
c = -1 mA IC"-10mA c = -30 mA lC - -1 mA
-
-10 V,
IC =
-10mA,
V CE
=
-4
lc =
— 5 mA
V CE
= -10 V,
lC -
-10 mA
V CB
-
-4
1
MHz,
1
MHz,
= -0.5V,
l
V CE = -4V. V CE ="-10V,
These parameters must be measured using pulse techniques,
To obtain
|
response
is
-50
-5
5
5
-5
- 100
MHz
nA nA
MA nA
25 150
30
150
20 -0.8
-1
-1
-0.15
-0.15
-0.35 12
V V
-0.35 15
16
20
1.2
1.5
1.6
2
GHz
See Note 4
l£ - 0,
V,
= 100 kHz to
-4.5
-0.8
f
V V V
-5 -50 -5
20
mA
UNIT
-15 -15
See Note 3
c =-10mA, See Note 3 = — 5 mA, f= 100 MHz >C
3.
^if e
-10mA,
V CE
- 100 kHz to
See Note 3
l
V,
2M4261
MAX MIN MAX
25
30
l
4.
fy, the
T A =150°C
l
IC =
MIN -15 -15 -4.5
lC * —1
V EB
Time Constant
See Note 3
mA, Iq = — 1 mA, V CE = -4 V,
f
b 'Cc
=0
lB = 0,
f
r
E
|q= —10 mA,
lB = -0.1
VcE(sat)
2N4260
TEST CONDITIONS
PARAMETER
C =0,
'C l
=
t^,
=»
300
2.5
pF
2.5
2.5
pF
35
60
30
50
See NoteS
—5 mA,
c --10mA,
extrapolated at the rate of
2.5
See Note 5
lis,
—6 dB
f
= 31.8
f
= 31 .8
MHz MHz
duty cycle < 2%. per octave from f = 100
MHz
PS
to the frequency at which
Ne|=15.
*JEDEC
C c b and C e b measurements employ a three-terminal capacitance bridge incorporating a guard circuit. or collector, respectively) and the case are connected to the guard terminal of the bridge.
The
third electrode (emitter
registered data
PRINTED IN
4-334
U.S.A.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
DALLAS. TEXAS 7S228
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
)
C
)
TYPES A5T4260, A5T4261 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S
731 1961,
MARCH
1973
SILECT* TRANSISTORS* DESIGNED FOR VHF AND UHF AMPLIFIER APPLICATIONS • High f t 2 GHz Min A5T4261 (
•
Low Capacitances
•
Calculated
f
... 2.5
max §
1
pF Max Ccb and Ceb
27 GHz Min (AST4261
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting Ml L-STD-202C, Method 106B. The transistors are insensitive to
light.
o soo MIN
Lead diameter ii not controlled in this area. B. Lead* having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.054 below the seeting plena of the
A.
C.
absolute
maximum
device relative to a maximum-diameter pockage. All dimensions are in inches.
ratings at 25° C free-air temperature (unless otherwise noted)
-15 V -15 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
V
-4.5
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at Storage Temperature Range
—30 mA (or
500
below) 25°C Free-Air Temperature (See Note 2)
mW
—65°Cto150°C
Lead Temperature 1/16 Inch from Case for 10 Seconds
260°
m
and 30 This value applies between A collector current when the bose-emitter diode is open-circuited. Derate linearly to 150°C free-eir temperature at the rata of 4 mW/°C. * Trademark of Texas Instruments tu.S. Patent No. 3,439,238 / f T (MHz) § Maximum Frequency of Oscillation may be colculeted from the equation: f (MHz) "200 /
NOTES:
1.
2.
max
•
V
i-b'C c (ps>
USES CHIP P27
Instruments TexasINCORPORATED POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
4-335
TYPES A5T4260, A5T4261 P-N-P SILICON TRANSISTORS
electrical characteristics at
25° C free-air temperature (unless otherwise noted)
PARAMETER V(BR)CBO -YlBniCEQ .YiBBlSRP
Breakdown Voltage
V ?E --10V, V CE --BV, v cr -iov, V CE --10V, v CE --iv,
Bate Cutoff Current
EV
Static
"FE
V BE
Forward Current Trenjfer Ratio
Collector-Emitter Saturation Voltage Small-Signal
Nel
Common-Emitter
Forward Current Transfer Ratio
Ccb
Collector-Base Capacitance
c eb
Emitter-Base Capacitance
ic-o V BE -2V V BE - 0.4 V V B E-2V, V B E"2V
T A - 8B°C
IC--10mA,
See Note 3
mA,
IC - -1
lp =
-1 mA,
V CE
-
-4
V,
V CE --10V,
-1
IC "
—5 mA,
IC--10mA, — 5 mA
30
f
= 100
MHz
lE-0,
V -5 -50
-200
-200 5
150
-
1
nA
30
150
20 -0.8
-1
-1
V
-0.15 -0.35
-0.35
V
15
12 16
20
1.2
1.5
1.6
2
GHz
See Note 4 f
nA
25
-0.15
f- 100 MHz
V
-4.5
-0.8
See Note 3
UNIT
V
-B -50
20
IC "
IC--10mA
-16 -15
26
mA
IC--10mA,
A6T4261
MAX MIN MAX
6
V,
lc
MIN -15 -16 -4.5
V,
V C E - -* V, V CE --10V, V CB - "4 V.
Transition Frequency
A, IC--10mA, lj:--10»iA,
Emitter-Base Breakdown Voltage
Collector Cutoff Current
ICEV
ifi
Collector-Ban Breakdown Voltage Collector-Emitter
A6T4260
TEST CONDITIONS
3.
4.
V CE V CE
Time Constant
-4 V, = -10V, *
= 31.8
These parameter* must be measured using pulse techniques. t w = 300 us, duty cycle < 2%. To obtain f T the ^>f e response is extrapolated at the rate of —6 dB per octave from f = 100 ,
|
ps
MHz
to the frequency at which
Ne|-15.
C CD and C e b measurements employ or collector, respectively)
•JEDEC
is
a three-terminal capacitance bridge incorporating a guard circuit.
The
third electrode (emitter
connected to the guard terminal of the bridge.
registered data
PRINTED IN U.S.A.
4-336
Texas INCORPORATED Instruments KMT
OFPI01 «OX
SOU
•
DALLA1, TBXAa 7S111
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N4391 THRU 2N4393 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BULLETIN NO. OL-S 7311912, MARCH 1973
SYMMETRICAL N-CHANNEL FIELD-EFFECT TRANSISTORS FOR HIGH-SPEED COMMUTATOR AND CHOPPER APPLICATIONS 0.25 nA Max • Low iD(off) •
•
Low rds(on)
•
Cj$» Product
'mechanical data
THE GATE
31,am
S§t!
0,a
IS IN
ELECTRICAL CONTACT WITH THE CASE
^
-0.100
0.210 6".i*o
0.030
-3- GATE
0.050-
MAX""!
All DIMENSIONS ARE IN INCHES
t 1
t
0.230 0.193 035? 0.178
DIA
UNLESS OTHERWISE SPECIFIED
OIA i
1
1
0.100
r_0.300J mill
2 -DRAIN 1
- SOURCE
ALL JEDEC TO-1 8 DIMENSIONS AND NOTES ARE APPLICABLE
•absolute
maximum
ratings at
25°C
free-air
temperature (unless otherwise noted) 4° v 40 V
Drain-Gate Voltage
Drain-Source Voltage
_40 v
Reverse Gate-Source Voltage Continuous Forward Gate Current
Continuous Device Dissipation at Storage Temperature Range
50
(or below)
25°C Case Temperature (See Note
1)
1
•JEDEC
:
W
~ 65 c t0 200^ C 300 C
Lead Temperature 1/16 Inch from Case for 60 Seconds
NOTE
mA
1.8
Derate lineerly to 200° C caw temperrature at the rate of 10.3 mW/°C. registered data. This data aheet contain! all applicable registered data In affect at the time of publication.
USES CHIP JNB2
Instruments Texas INCORPORATED •oar orncu »ox aoia
•
Dallas, tixa* iiiii
4-337
TYPES 2N4391 THRU 2N4393 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS 'electrical characteristics at
25°C
free-air
PARAMETER Gate-Source Breakdown Voltage
Vesr
Gate-Source Forward Voltage
less
Gate Reverse Current
Drain Cutoff Current
Vesioffl
Gate-Source Cutoff Voltage
loss
Zero-Gate-Voltage Drain Current Drain-Source
»dsi«i
On-State Voltage
1
Vss
On-State Resistance Small-Signal Drain-Source
r»v«"l
. '*'
.
On-State Resistance
Vss
=
Common-Source
Vds
=
Short-Circuit
=
l
D
=
l
1
Common-Source
"
Short-Circuit
Reverse Transfer Capacitance
Vds
= = =
Vss
0,
V ss
0,
V ss
V
1
-0.1
-0.1
nA
-0.2
-0.2
-0.2
pk
0.1
nA
0.1
0.1
TA
TA TA
= = =
150°C
0.2
150°C
,*
0.2
150°C
0.2
-4
-10
-2
-5
-0.5
-3
V
50
150
25
75
5
30
mA V
0.4 0.4
mA
= 0, = 0,
0,
V
1
f
=
1
kHz
f
=
1
MHz,
30
60
100
ft
30
40
100
n
= -12 V, = -7V, = -5 V,
f f f
= = =
1
MHz
14
14
14
pF
3.5
lMHz 1
pf
3.5
MHz
3.5
switching characteristics at 25°C free-air temperature
Time
tr
Rise
fa,
Turn-On Time
TEST »
Vr»
-, - 10nuV,
_ Vssm
„
See Figure
1,
u
Time
t,
Fall
ton
Turn-Off Time
NOTES:
2. This 3.
.^ =
0,
parameter must be measured with bias voltages applied for
This parameter mutt be measured using pulse techniques.
fThtse are nominal values; eiact values vary
JEDEC
t
w
=
v «l.«l
less
100
2N4391 TYP MAX
CONDITIONS
"
U2mA(2N4391) 6 mi ( 2N4 302) 3 mA (2N4393) (
duty cycle
(_12V(2N4391) -?V(2N4392)
-5 V
(2N4393)
<
1%.
slightly with transistor parameters.
registered data.
Texas INCORPORATED Instruments POST OFFICE BOX W12
MAX
2N4393 TYP
MAX
UNIT
2
5
3
5
4
5
ns
5.5
15
6.5
15
8
15
ns
7
15
13
20
27
30
ns
10
20
18
35
31
50
ns
1
than 5 seconds to avoid overheating. fit,
2N4392 TYP
1
/
4-338
150°C
UNIT
-40
-0.1
See Note 3
Vds
PARAMETER
*
=
2N4393
0.4
V ss
V,
TA
See Note 2
D
-40 1
0,
l
D
2N4392
MAX MIN MAX MIN MAX
-40
nA
= 12 mA = 6 mA = 3 mA
l
l
0,
1
=
V ss
0,
20
D
l
Input Capacitance
Vds
*
=
MIN
V DS
l
Static Drain-Source 'osioni
= VDS = V os = V m = 0, V SS = -12V V ss = -7 V V ss = -5 V V ss = -12 V, V SS = -7V, V 6S = -5V,
s = -l M A, Is = mA, Vss = -20 V, Vss = -20 V, VOS = 20V, Vds = 20 V, V DS = 20 V, V DS = 20V, Vds = 20 V, V DS = 20 V, Vds = 20 V, Vds = 20 V, Vss = 0, Vss = 0, Vss = 0,
2N4391
CONDITIONS
TEST
V{M|sss
loiofri
temperature (unless otherwise noted)
DALLAS. TEXAS 78222
TYPES 2N4391 THRU 2N4393
N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS PARAMETER MEASUREMENT INFORMATION TEKTRONIX 109
I
_l_5i
n TEKTRONIX
667
TEST CIRCUIT
tr
I
<
0.5 ns
tf
<
0.5 ns
1*200 ns-J
INPUT
•d'off)
(See
Note
a)
VOLTAGE WAVEFORMS
TYPES 2N439T 2N4392 2N4393
NOTE
3
a:
An
PRINTED IN
equivalent generator and oscilloscope
«L
VGSloff)
n -12V -7V 1.54 kn -5V 3.16 kfi
may be used. The
750
oscilloscope must have a
50-n input impedance.
USA
Tl
connot osiume ony responsibility for ony circuits shown
or
represent
that
they are
free
from patent infringement.
TEXAS INSTRUMENTS DESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME POSSIBLE IN ORDER TO IMPROVE OESIGN AND TO SUPPLY THE BEST PRODUCT
Instruments TexasINCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 7S222
4-339
TYPES 2N4402, 2N4403, A5T4402. A5T4403 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7311973, MARCH 1973
SILECTt TRANSISTORS* •
•
For Low-Level, Small-Signal, General Purpose Amplifier and Switching Applications
Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil Pin-Circle Configuration
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting Ml L-STD-202C, Method 106B. The transistors are insensitive to light. 2N4402, 2N4403
? EBC NOTES:
A. Lead diameter B. All
is not controlled dimensions are in inches.
in this area.
•ALL JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE A5T4402, A5T4403
""'US?
Dl
*
3 IE ADS
3-COUfCIOt
1 0.005
Lead diameter is not controlled in this area. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.054 below the seating plane of the device relative to a maximumdiameter package. All dimensions are in inches.
absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
-40 V* -40 V* -5 V* —600 mA*
Collector-Base Voltage
Collector-Emitter Voltage (See Note Emitter-Base Voltage
1
)
Continuous Collector Current
Continuous Device Dissipation at
„ Storage
(or below)
25°C Free-Air Temperature (See Note
1310
<
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTES:
2)
/'-65°C
„ Temperature Range
W*
150°C§ _5 c° c i35°c* jf260°C§ 1 230°C* to
„
mA
This value applies between when the base-emitter diode is open-circuited. and 50 Derate the 625-mW rating linearly to 150°C free-air temperature at the rate of 5 mW/°C. Derate the 310-mW (JEDEC registered) rating linearly to 135°C free-air tempereture at the rate of 2.82 mW/°C*The asterisk identifies JEDEC registered data for the 2N4402 and 2N4403 only. This data sheet contains all applicable registered data in effect at the time of publication. ^Trademark of Texas Instruments tu.S. Patent No. 3,439,238 STexas Instruments guarantees these values in addition to the JEDEC registered values which are also shown. 1
.
2.
USES CHIP P20
4-340
TexasINCORPORATED Instruments POST OFFICE BOX 5012
DALLAS, TKXAS 75933
TYPES 2N4402, 2N4403, A5T4402, AST4403 P-N-P SILICON TRANSISTORS
'electrical characteristics at
25° C free-air temperature
PARAMETER Breakdown Voltage
V(BR)CBO
Collector-Base
v (BR)CEO v (BR)EBO
Collector-Emitter
'CEV
bev
Base Cutoff Current
I
Breakdown Voltage
c = -100mA, E = - -1 mA, lj-0,
c
Emitter-Base Breakdown Voltage
l
E =-100/iA,
Collector Cutoff Current
V CE = -35V. V BE
Forward Current Transfer Ratio
- 0.4 V V CE »-35V, V BE - 0.4 V V CE = -1V. IC = -100mA V CE " -1 V, c = -1 mA V CE = -1 V, c = -10mA V C E " -2 V, c --150mA V CE « -2 V. IC - -500 mA B = -15mA, c = -150 mA l
Base-Emitter Voltage
Collector-Emitter Saturation Voltage IB "
Small-Signal »ie
V V V
-40 -40 -5 -100
-100
100
100
nA nA
30 60
l
50
100
50
See Note 3
150
20
100
300
20
-0.75 -0.95 -0.75 -0.95 See Note 3
l
-1.3 -0.4
-0.4
l
-0.75
-0.75
Common-Emitter 0.75
7.5
30
250
0.1 x
8x
V
-1.3
1.5
15
60
500
V kn
Input Impedance Small-Signal
hfe
Common-Emitter
Forward Current Transfer Ratio Small-Signal
"re
V CE
Common-Emitter
=
-10V,
l
c = -1 mA,
f-
1
kHz
10-*
Reverse Voltage Transfer Ratio Small-Signal
h oe
x
8x
10—4 10~4
10-4
1
Small-Signal
Common-Emitter
Forward Current Transfer Ratio
ccb
Collector-Base Capacitance
V CE =
-10-V.
l
c - -20 mA,
f
V CB
-10
l
E =0,
f- 140 kHz,
v IC*0,
f- 140 kHz,
'
See Note 4 Veb = -°- 5
Emitter-Bese Capacitance
Cab
V,
.
- 100
MHz
3.
These parameters must be measured using pulse techniques.
4.
C cb and C eD measurements employ or collector, respectively)
asterisk identifies
JEDEC
is
t
w - 300 M*. duty
cycle
<
100
1
100 fimho
2
1.5
See Note 4
NOTES:
0.1
B
Common-Emitter
Output Admittance
Nel
"The
UNIT
MAX MIN MAX
30
c = -500 mA IC= -150 mA c = -500 mA
-50 mA,
2N4403 A5T4403
l
l
B - -50 mA, Iq = —15 mA,
l
VcE(sat)
See Note 3
ic = o
l
VBE
MIN -40 -40 -5
l
l
Static
"FE
2N4402 A5T4402
TEST CONDITIONS
8.5
8.5
pF
30
30
pF
2%.
a three-terminal capacitance bridge incorporating a guard circuit.
The
third electrode (emitter
connected to the guard terminal of the bridge.
registered data for the
2N4402 and 2N4403
only.
TexasINCORPORATED Instruments POST OFFICE BOX 5012
*
DALLAS. TEXAS 75222
4-341
TYPES 2N4402, 2N4403. A5T4402. A5T4403 P-N-P SILICON
TRANSISTORS
'switching characteristics at 25° C free-air temperature
PARAMETER tj
Delay Time
tr
Rise
t
Storage
s
Fall
tf
* Voltage
*The
MAX
TEST CONDITIONS*
V CC = -30V, c = -150mA, v BE(off) = 2 V, VCC = -30V. C = -150 mA, l
Time Time
I
lB(2) = 15
Time
mA,
B (i| = -15mA, See Figure 1 l
B (D = -15 mA, See Figure 2 l
UNIT
15
ns
20
ns
225
ns
30
ns
and current values shown are nominal; exact values vary slightly with transistor parameters.
asterisk identifies
JEDEC
registered data for the 2 N 4402
and 2N4403 only.
PARAMETER MEASUREMENT INFORMATION
1
to
1
00 MS
—KI
+2V tr
<
2 ns
O OUTPUT I
INPUT
Jt-" C t
<
10 pF
90%
OUTPUT 10%
VOLTAGE WAVEFORMS
TEST CIRCUIT
FIGURE t-Df LAY AND RISE TIMES
1
to 100
ns—(«
+14 Vtf
O OUTPUT
< 20
ns
-16 V
1 kn INPUT O-^VW
/
90% 10%-
VOLTAGE WAVEFORMS
TEST CIRCUIT
FIGURE 2-STORAGE AND FALL TIMES
NOTES:
a.
b. c.
The input waveforms are supplied ov a generator with the following characteristics: Z out = 50 £2, duty cycle = 2%. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 4 ns, R jn =10 Mfi. C-r includes capacitance of test
jig,
connectors, and oscilloscope.
PRINTED IN
4-342
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
assume eny responsibility
Tl
conrtot
or
represent
thai
they
are
free
for
from
USA,
any circuits shown
patent
^
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N4409, 2 N 4410, A5T4409, A5T44W N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S
731 1974,
MARCH
1973
SILECT t TRANSISTORS!
FOR MEDIUM-CURRENT AMPLIFIER APPLICATIONS •
High-Voltage Indicator and Display Control
•
Rugged One-Piece Construction with In-Line Leads or Standard TO- 18 100-mil Pin-Circle Configuration
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C, Method 106B. The transistors are insensitive to light. 2N4409, 2N4410
I NOTES:
is not controlled dimensions are in inches.
A. Lead diameter B.
All
in this area.
ALL JEDEC TO 92 DIMENSIONS AND NOTES ARE APPLICABLE A5T4409, A5T4410
NOTES:
absolute
I
Lead diameter is not controlled in this area. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.0S4 below the seating plane of the device relative to a maximumdiameter package. C. All dimensions are in inches. A. B.
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
Emitter-Base Voltage
2N4409 A5T4409 80 V* 50 V* 5 V*
Continuous Collector Current
•*
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2)
*
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
e» Storage Temperature o Range «.
*
Lead Temperature 1/16 Inch from Case for 10 Seconds
2N4410 A5T4410 120 V* 80 V* 5 V* •• ^250 mA*c *"
1310 mW*f J^65°C to 150°C§L 1— 55°C to 135°C*r f260°C§1 |230°C* f
*"
These values apply between and 50 mA when the base-emitter diode Is open-circuited. 2. Derate the 625-mW rating linearly to 150°C free-air temperature at the rate of 5 mW/°C. Derate the 310-mW (JEDEC registered) rating linearly to 135°C free-air temperature at the rate of 2.82 mW/°C. •The asterisk identifies JEDEC registered data for the 2N4409 and 2N4410 only. This data sheet contains all applicable registered data in effect at the time of publication. T Trademark of Texas Instruments tu.S. Patent No. 3,439,238 USES CHIP N23 § Texas Instruments guarantees these values in addition to the JEDEC registered values which are also shown.
NOTES:
1.
Instruments Texas INCORPORATED POST OPPtCE BOX 5012
•
DALLAS, TEXAS 75222
4-343
TYPES 2N4409. 2N4410. A5T4409, A5T44W N-P-N SILICON TRANSISTORS 'electrical characteristics at 25° C free-air
temperature (unless otherwise noted 2N4409 A5T4409
TEST CONDITIONS
PARAMETER
MIN
v (BR|CBO
Collector-Base
V(BR)CEO V(BR)CEX v (BR)EBO
Collector-Emitter
Breakdown Voltage
Collector-Emitter Breakdown Voltage
l
Static
"FE
c = 500uA,
I
Vcb VCB
Forward Current Transfer Ratio
=
100V,
- 60 V,
Base-Emitter Voltage
Small-Signal
frel
Forward Current Transfer Ratio
Ccb
Collector-Base Capacitance
NOTES:
l
l
l
E E
B =
0.1
=
mA.
10V,
V C B=10V,
80
120
100°C
IC =
1
nA
HA
100°C
1
100
100
mA
1
1
5
1
ic-o
IC =
V V V V 10
IC=1
V CE
-5 V
Ta = TA =
E =0.
IC= 10 mA,
- 5 V,
80
10
V,
1
50
5
mA,
-
120
See Note 3
-0 -0
IC =
MAX
80
ic = o
V CE
l
Common-Emitter
- 8.2 kfi to
RB
lE-0.
V CE
Collector-Emitter Saturation Voltage
VCE(sat)
-0
V CB = 100V, V EB =4V, V C E = 1 V, IB = 0.1
VBE
E
lB = 0,
E = 10 uA, V C B - 60 V,
Emitter-Base Breakdown Voltage
Emitter Cutoff Current
EBO
l
l
Collector Cutoff Current
ICBO
!
C =10uA, IC = 1 mA,
Breakdown Voltage
2N4410 A5T4410 UNIT MIN MAX
60
See Note 3
mA mA mA
400
60
f
- 30
lE-0.
f
= 140 kHz,
2
400
0.8
0.8
0.8
0.8
0.2
MHz
Iq= 10 mA,
nA
60
60
10
0.2
2
V
10
12
12
V
pF
See Note 4 3. 4.
The asterisk
These parameters must be measured using pulse techniques, t^, = 300 jlxs, duty cycle < 2%. C c b measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter guard terminal of the bridge. identifies
JEDEC
registered data for the
2N4409 and 2N4410
is
connected to the
only.
THERMAL INFORMATION DISSIPATION DERATING
5 E
CURVE
800
I
.2
700 600
=
500
\
Tl
(3uarantC' 300rnA
See Note 5
mA, lc= 150 mA,
See Note 5
"
-
Base-Emitter Voltage
lg
Collector-Emitter Saturation Voltage
lB
Small-Signal
'
lc = 150
15mA, = 15mA, =
MA nA
10
-
VBE v CE(sat)
40
C 20
50
35
l
Static
60
40
UNIT
10
Ta '
l
"FE
60
=
C
MAX MIN MAX
See Note 5
50
25
75
35
100 300
See Note 5
20
See Note 5 0.75
1.2
0.75
1.2
0.4
0.4
See Note 5
Common-Emitter
1.5
9 0.75
4.5
kn
Input Impedance Small-Signal
Common-Emitter
V CE
Forward Current Transfer Ratio Small-Signal
=
10V
lc
-
=1mA>
f
=
1kHz
30 150
60 300
Common-Emitter
25 umho
50
Output Admittance
M
Small-Signal
Common-Emitter
Vce
=
10V
lc*
-
20mA
'
f= 100 MHz
Forward Current Transfer Ratio
V C B=10V,
Collector-Base Capacitance
Ccb
l
E
=
-
f
1
MHz,
See Note 6
•operating characteristics at 25° C free-air temperature t individual triode characteristics (see note 4)
PARAMETER Delay Time
td
Rise
Time
Storage Fall
Time
Time
Spot Noise Figure
NOTES:
4. 5. 6.
7.
*JEOEC
l
= 20012, Ri_ -i_ -
l
MAX
TEST CONDITIONS - -0.5 V. c =150mA, B (1)=15mA, V BE off) l
(
See Note 7 and Figure 1 _ = 15mA, B (2) = (1)
c =150mA, B l
=
200n,
V CE
= 10V,
R|_
l
40
__
-15mA.
280 70
See Note 7 and Figure 2 l
UNIT
20
c =100uA.
BG°Un,
f=1kHz
characteristics. of the triode not under test ore open-circuited for the measurement of these These parameters must be measured using pulse techniques. t„ - 300 us, duty cycle < 2%. emitter and C cb measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The to the guard terminal of the bridge. Voltages and current values shown are nominal; exact values vary with device parameters.
dB
The terminals
c
I
are connected
registered data
f Voltages
and currents apply to the N-P-N
triode. For the P-N-P triode the values are the same, but the signs are reversed.
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS, TEXAS 7S222
4-353
TYPES 2N4854, 2N4855 N-P-N, P-N-P
DUAL SILICON TRANSISTORS 'PARAMETER MEASUREMENT INFORMATION
T7.7 +9.9V Y
—.— — IN INPUT
-0.5V
I
OUTPUT
INPUT
OUTPUT
TEST CIRCUIT
VOLTAGE WAVEFORMS
FIGURE 1 -DE LAY AND RISE TIMES
+ +16.2 10.2 V
1
1
INPUT -13.8
V I
I
OUTPUT
F90%
*-3V d TEST CIRCUIT
VOLTAGE WAVEFORMS
FIGURE 2-STORAGE AND FALL TIMES
NOTES,
a.
b.
W aveform,
The Input tf
<
All
have the following characteristic: For figure 1. , r < 2 ns. 10 ms. duty cycle < 2%. waveforms are monitored on an oscilloscope with th. following characteristics; , 5 ns,
t
w-
SVmb °' !
•JEDEC registelTtV
"°
*"
*"
" "" "'" "'^ '" *" ™+ "—
,
m=
200
„..
duty cyci. < 2%; for figure 2 8
< 5 ns. R ln > ,00 ktt. C, n < «» """' °"« »»'"* >""£" r
» -ersad.
PRINTED IN U.S.A.
t-354
TexasINCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TEXAS 7B222
Tl
tonnol assume any responsibility
or
represent
thai
they are
free
far
from
'
,2 P F
any
potent
circuits
37
shown
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N48S6 THRU 2N4861, 2N4856A THRU 2N4861A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BULLETIN NO. DL-S 731 191 1, JUNE 1973
SYMMETRICAL N-CHANNEL FIELD-EFFECT TRANSISTORS FOR HIGH-SPEED COMMUTATOR AND CHOPPER APPLICATIONS 25
•
Low
rds(on)
•
Low
iD(off)
•
Low rds(on)
0.25
•
Max (2N4856, 2N4856A, 2N4859, 2N4859A)
fi
nA Max
Cj Ss Product
'mechanical data
THE GATE 3
LEADS
IS IN
ELECTRICAL CONTACT WITH THE CASE
Mli DIA 0.016
0.210 0.170
0.030
MAX" All DIMENSIONS ARE
-T-
I
IN INCHES UNLESS OTHERWISE
0.230 0.195 O20? 0.178
5Jg§
DIA
DIA
SPECIFIED
0.028 0.046
933S _0.500_ 2
-DRAIN 1 - SOURCE
ALL JEDEC TO-18 DIMENSIONS AND NOTES ARE APPLICABLE
•absolute
maximum
ratings at
25°C
free-air
temperature (unless otherwise noted)
2N4856 2N4859 2N4857 2N4860 2N4858 2N4861 2N4856A 2N4859A 2N4857A 2N4860A 2N4858A 2N4861A 40 v 40 v
Drain-Gate Voltage Drain-Source Voltage
~40V
Reverse Gate-Source Voltage Continuous Forward Gate Current
*
25°C Free-Air Temperature (See Note below) 25°C Case Temperature (See Note 2)
Continuous Device Dissipation at (or below) Continuous Device Dissipation at Storage Temperature Range
(or
1)
.
.
.
1.
2.
.
•
v V v
50 mA 360 mW
18W
••
~
"
^
to 200 C 300 C
-65°C
*
Lead Temperature 1/16 Inch from Case for 60 Seconds
NOTES:
30 30 ~30
•>
Derate linearlv to 200°C free-air temperature at the rate of 2.06 mW/ C. Derate linearlv to 200°C case temperature at the rate of 10.3 mW/ C.
USES CHIP JN52 •JEDEC
registered data. This data sheet contains
all
applicable registered data in effect at the
time^publication^
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
4-355
TYPES 2N4856 THRU 2N4861. 2N4856A THRU 2N4861A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS 2N4856 "electrical characteristics at
PARAMETER Gate-Source l
'lIKIGSS |„„Mo«ii Voltage
=
6
-1
= -20 Vss = -20 T A = 1S0-C VSS = -15 »ss = -15 A = 1S0»C Vos = Vos = A = 150"C Vos = Vss
Gale Reverse
sss
Current
= = =
V DS
isA,
2N4861
25°C free-air temperature (unless otherwise noted) 2N4SM 2N4U7 2N4SM 2N44J9 2N4«M 2N4M1 MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX
CONDITIONS
TEST
THRU
V,
V os
V,
VDS
V,
VDS
V,
Vos
MIN
-40
-to
-40
-30
-0.25
-0.25
-0.25
-0.J
-0.5
-0.5
Drain Cutoff Current
IS V.
V sl Vss
t>*
tutoff Voltage
15 V,
Zero- Gate-
"""•»
loss
Drain turttat Drain-Source
V DSonl
0nS,l"»
=
»OS
l
'5V,
D
= -10 V = -10
= = =
D
=
0.5
=
V s$
l
Voltage 1
D
20 mA,
V6S
10 mA,
V ss
mA,
Vss
o.
'o
5
-0.25
-0.25
nA
-0.5
-0.5
-0.5
/f
0. 1
kHz
=
-10
Resistance
Common-Source Short-Circuit C|
"
V DS
=
V 6S
0,
Input
f
V,
= IMHz
Capacitance
Common-Source Short-Circuit Cr "
Vds
=
V„ = -10V MHi f =
0,
Reverse Transfer
1
Capacitance
•switching characteristics at 25°C free-air temperature
PARAMETER
TEST
2N4856A 2N48S9A
CONDITIONS
TYP Turn-On *d|«.|
Delay Time
Vpp
=
10
V,
lo^t =
Time
tr
Rise
t©«
Tum-Off Time
t.
Rise
'„
Turn-On Time
t,
Fall
U
Turn-Off Time
Time
=
Vssoi
See Figure
Vk>
=
NOTE
3:
JEOEC
Thh
1
10 V,
=
V SSM
"
0,
20 10
\
-10 V (2N4856A, 2N4859A) -«V(2N4857A,2M4840A) -4V(2N4858A,2N4861A)
1
12mA|2N4856A,2N4859A)
l
1*>m =
trW =
\
See Figure 2,
Vssr^n
parameter must bt measured wing polio lechnlquet.
I.
=
mA
»
|
3mA(2N4858A,2K4861A)
i
-12V{2N4854A,2N4859A)
\
=s
-1 -5 V
TYP
MAX
2N4858A 2N4861A TYP
UNIT
MAX
»
6
8
ns
3
4
8
ns
20
40
80
ns
2
3
4
ns
5.5
6.5
8
ns
7
13
27
ns
10
18
31
ns
(2M4857A, 2M4860A)
\
0,
Time
mA (2N4856A, 2N4859A] mA (2N4857A, 2N4860AJ 5 mA |2N4858», 2N486H
1
\ j
MAX
2N48S7A 2N4860A
(2N4857A, 2N4860A) (2N4858A, 2N4841A)
100 mi, duly cycle
<
10%.
roglittred dole (typical data Htlodtd).
fThtie are nominal values; exact valves vary
slightly with transistor parameters.
Instruments Texas INCORPORATED POST OFFICE BOX
9012
•
DALLAS, TIXAS 75X22
4-357
TYPES 2N4856 THRU 2N4861, 2N4856A THRU 2N4861A N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS PARAMETER MEASUREMENT INFORMATION
tr
<
ns
1
tf
<
1
ns
0INPUT
v GS(off) 1
I I
-#|ton/*»lt of( |«_ *• •• Ut 1 MJ2, Cj n < 2.5 PF.
TEKTRONIX
tr
<
0.5 ns
tf
<
0.5 ns
109
p^*200nsJ V,GS(off) jlofflJ
td(on)-
TEKTRONIX
|Np
I
j
tdloff)
567 (See Note a)
VOLTAGE WAVEFORMS
TEST CIRCUIT
NOTE
a:
An
TYPES
Rl
2N4856, 2N4856A, 2N4859, 2N4859A 2N4857, 2N4857A, 2N4860. 2N4860A 2N4858, 2N4848A, 2N4861. 2N4861A
750
equivalent generator and oscilloscope
may be
used.
1.54
VGS(off)
n
-12 V
k«
-7 V -5 V
3.16 kf!
The oscilloscope must have
FIGURE
a
50X2 input impedance.
2
PRINTED IN U.S.A.
4-358
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
Tl
connot assume ony responsibility
or
represent
that
they
are
free
for
from
6
any circuits shown
patent
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N4891 THRU 2N4894 P-N PLANAR SILICON UNIJUNCTION TRANSISTORS BULLETIN NO. DL-S 689776, JANUARY 1967
PLANAR UNIJUNCTION SiLECTt TRANSISTORS* FOR APPLICATION IN SCR DRIVERS, MOTOR-SPEED CONTROLS, TIMERS, WAVEFORM GENERATORS, MULTIVIBRATORS, RING COUNTERS, ELECTRONIC ORGANS, AND MILITARY FUZES Low
•
Leakage Allows More Accurate Timing Circuit Design
Low
Drive Currents
•
High Performance Capability at
•
Provides Wider Range of Design Applications than Bar-Type Unijunction Transistors
Rugged, One-Piece Construction Features Standard 100-mil
•
TO-18
Pin-Circle
mechanical data These transistors are encapsulated
in
a
plastic
compound
specifically designed for this purpose, using a highly
mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C, Method 106B. The transistors are insensitive to light.
•CASE OUTLINE
3
A. B.
C.
*
absolute
Lead diameter is not controlled in this area. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.054 below the seating plane of the device relative to a maximum-diameter package. All dimensions are in inches.
maximum
Emitter
VEMK
ratings at 25°C free-air temperature (unless otherwise noted)
— Base-Two
—30 V
Reverse Voltage
See Note
Interbase Voltage
50
Continuous Emitter Current
Peak Emitter Current (See Note
2)
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 3)
.
Lead Temperature Kt Inch from Case
NOTES:
for 10
.
.
300 mW 150°C
to
260 C
Seconds
V
r BB*^T* Intervase voltage is limited solely by power dissipation, Vg2-B1 ~ This value applies for a capacitor discharge through the emitter—base-one diode. Current must pulse- repetition rate must not exceed 10 pps. 3. Derate linearly to 150°C free-air temperature at the rate of 2.88 mW/ C.
1.
2.
•JEDEC
.
-55°C
Storage Temperature Range
1
mA 1 A
fall
to 0.37
A
within 3
ms and
registered data
T Trademark of
Texas Instruments $U.S. Patent No. 3,439,238
USES CHIP U42
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
4-359
TYPES 2N4891 THRU 2N4894 P-N PLANAR SILICON UNIJUNCTION TRANSISTORS
'electrical characteristics at
25°C free-air temperature (unless otherwise noted)
PARAMETER
Collector-Base
V |br|ceo
Collector-Emitter
Breakdown Voltage
V|r)ek> Emitter-Base Breakdown Voltage Icbo
Collector Cutoff Current
h re
Stalk Forward Current Transfer Ratio
,
,
>
hf*l
Small-Signal Common-Emitter
I™
Forward Transfer Admittance
Ccb
Collector-Base Capacitance
ri, '
l
E
c
l
t
jtiA,
l
Short-Circuit
Cc
=
= Vc. =
V CE
MIN TYPMAX MIN TYPMAX
See Mote 3
30
30
V
18
18
V
4
4
V
100
l
TA
l
lc
=
2
10 V,
lc
=
2 mA,
10 V,
lc
10 V,
U
=
10
85°C
mA
= 2mA, = 0,
so f
f
f
=
100 MHz
= =
10 MHz
14
6
Output Resistance
Collector-Base Time Constant
= Vc. =
Vce
10 V, lc 10 V,
l
E
= 2 mA, f = = -2 mA, f =
ting characteristics at
25°C free-air temperature
PARAMETER
TEST
NOTES:
3. 4.
nA
10
M*
30
150
6
14
mmho
0.65
0.1
0.65
0.1
Pf
k
50
10 MHz 79.8 MHz
14
14
20
2N4996
NF
100
70
1MHz, 4
UNIT
See Note
Parallel-Equivalent Common-Emitter °*p
= = 0, lc = E = E = 0,
c
l
V CE
Forward Current Transfer Ratio
1
r
= 10 /tA, = 2 mA, = 10 E V c . = 15 V, V c . = 15 V, Vce = 10 V, l
Small-Signal Common-Emitter
,
CONDITIONS
TEST
Vce
Spot Noise Figure
=
10 V, lc
=
2mA,
CONDITIONS
Rs=
100 O,
TYP f
=
100 MHz
This parameter must be measured using pulse techniques. t w - 300 us, duty cycle < 2%. a three-terminal capacitance bridge incorporating a guard cirucit. The emitter
C cb measurement employs
20
UNIT dB
2.5
is
n
PS
connected to the
guard terminal of the bridge.
•JEDEC
registered data
PRINTED IN
4-364
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 7B232
USA
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANT TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE IEST PRODUCT POSSIBLE.
TYPES 2N5045, 2N5046, 2N5047
DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS BULLETIN NO. DL-S 7211695, MARCH 1972
MATCHED FIELD-EFFECT TRANSISTORS High
|yfs|/Cjss
Low
Input Capacitance Cjss
Low Gate
Ratio (High-Frequency Figure-of-Merit) •
•
•
8 pF Max
Reverse Current Differential ... 10 n A
Recommended
for Low-Level
Max
Ta =
at
D-C Amplifiers, Sample-Hold
100°C
Circuits,
and Series-Shunt Choppers
'mechanical data
THE ACTIVE ELEMENTS AIE
ML MMf MStONS
Alt
>f*-M
'absolute
maximum ratings at 25° C free-air temperature
1.
SOUICE
2.
DIAIN
3.
GATE
5.
SOUICE 2
«.
DIAIN 2
ALL JEOEC TO-71 DIMENSIONS
7.
(ATE 2
AND NOTES AIE APPLICABLE
1
ELECTIICALLY INSULATED FROM 1
THE CASE I
I
(unless otherwise noted)
EACH
TOTAL
TRIODE DEVICE Drain-Gate Voltage
50
±100 V ±100 V
Gate- 1-Gate-2 Voltage Lead-to-Case Voltage
Continuous Forward Gate Current Continuous Device Dissipation at Storage Temperature Range
(or
below) 25°C Free-Air Temperature (See Note
1
)
....
•
1
JEDEC
:
Derate linearly to 175°C free-air temperature at the rates of 1.67 registered data. This data sheet contains
all
30 mA 250 mW 400
mW
-65°C to 200°C « 300°C
Lead Temperature 1/16 Inch from Case for 10 Seconds
NOTE
V
-50 V
Reverse Gate-Source Voltage
mW/'C
for each triode and 2.67
mW/ 'c for the total c
device.
applicable registered data in effect at the time of publication.
USES CHIP JN51
Instruments TexasINCORPORATED POST OFFICE BOX S012
OALLAS, TEXAS 75222
4-365
TYPES 2N5045. 2N5046. 2N5047 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
'electrical characteristics at
25° C free-air temperature (unless otherwise noted)
individual triode characteristics (see note 2)
TEST CONDITIONS
PARAMETER 'gss
Gate Reverse Current
v GS(off)
Gate-Source Cutoff Voltage
'DSS
Zero-Gate-Voltage Drain Current
r/fsl
Smalt-Signal
Common-Source Forward Transfer Admittance
l/osl
Small-Signal
Common-Source Output Admittance
Cjss
Small-Signal
Common-Source Input Capacitance
Crss
Small-Signal
Common-Source Reverse Transfer Capacitance
Small-Signal
Common-Source Forward Transfer Admittance
M
V GS - -50 V, V G S - -30 V, V GS = -30 V V DS =15V, V DS =15V, V DS =15V, V D S='5V, V DS =15V, V DS =15V, V DS =15V,
MIN
MAX
UNIT MA -0.25 nA -250 nA -1
V DS = V DS = VdS = °D = 0.5 nA V GS = Vqs - o. V GS = 0, V G S - 0. V G S = 0,
T A =150°C
l
=
1
kHz
=
1
kHz
=
1
-
V G S - o.
=
-4.5
0.5
8
mA
6
mmho
25
jumho
1.5
MHz 1 MHz 100 MHz
V
-0.5
8 4
pF
pF
mmho
1.5
triode matching characteristics
2N5045 2N5046 2N5047 MIN MAX MIN MAX MIN MAX
TEST CONDITIONS
, l
Gate-Reverse-Current Differential
GSS1~" GSS2| ,
v GS1*~ v GS2l
Gate-Source- Voltage Differential
l
V GS
= -1 5 V,
Vds=15V. V DS =15V,
V DS = 0, T A = 100°C
10
10
10
Id = 50 " a
5
10
15
5
10
15
5
10
15
5
10
15
d = 200mA V DS =15V, D = 200|iA. Ta(1) = 25°C, T A(2 = -25°C V D s=15V, D = 200uA, T A(1 = 25°C, T A(2 )-100°C V DS =15V, V GS =0, I
UNIT nA
mV
l
,
IaIvqsi
v GS2 ATa
Gate-Sou rce-Voltage-D if ferential 1
)
|
changewithTemperature
mV
)
l
)
1
Zero-Gate-Voltage
DSS1
k
Small-Signal
,
Common-Source
1
ks
0.95
1
0.9
1
0.8
1
0.95
1
0.9
1
0.8
1
See Note 3
Drain Current Ratio
'DSS2
V DS =15V, f
=
1
I
d
=
200mA,
See Note 3
kHz,
Ratio -
Small-Signal
,
Common-Source
I
" os " ~~ "^ 2 '
Output Admittance
Differential
V DS =15V, f
-
1
I
d
=
200mA, 2
3
2N5045
2N5046
MAX
MAX
1
See Note 3
kHz,
Mmho
•operating characteristics at 25° C free-air temperature individual triode characteristics (see note 2)
TEST CONDITIONS
PARAMETER F
Vn
NOTES:
Spot Noise Figure
3.
•JEDEC
V GS
RG =
Noise Bandwidth = 5 Hz
1
M!J,
V DS "15V,
Equivalent Input Noise Voltage
2.
V D s-15V,
V GS
Noise Bandwidth = 5
f=10Hz,
= 0,
5
5
200
200
f=10Hz,
= 0,
Hz
The terminals of the triode not under test are open-circuited for the measurement of these The lower of the two characteristic readings is taken as the numerator or subtrahend.
UNIT dB nV/v'Hz
characteristics.
registered data
PRINTED IN
4-366
USA
Instruments Texas INCORPORATED POST OFFICE BOX 5012
*
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N5058, 2N5059 N-P-N SILICON TRANSISTORS BULLETIN NO. OL-S 739699. MARCH 1967-REVISED MARCH 1973
HIGH-VOLTAGE 10-WATT TRANSISTORS FOR GENERAL PURPOSE AMPLIFIER APPLICATIONS IN
LINE-OPERATED CIRCUITS •
Solid-State Relays
•
High-Voltage Inverters
•
Voltage Regulators
•
TV Sweep Circuits
mechanical data
THE COLLECTOR
IS IN
ELECTRICAL CONTACT WITH THE CASE
^t if
OUTLINE IN
I
—
\*—t
ALL DIMENSIONS ARE
IN
INCHES UNLESS OTHERWISE SPECIFIED
ALL JEDEC TO-39 DIMENSIONS ANO NOTES ARE APPLICABLE*
absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
2N5059 250 V* 250 V* 7 V* 6 V* * 150 mA »
2N5058 300 V* 300 V*
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage
—
•
Collector Current
Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2) Continuous Device Dissipation at
(or
.
.
below) 25°C Case Temperature (See Note 3)
.
+
1
|cw*l
Storage Temperature Range
-65°C
Lead Temperature 1/16 Inch from Case for 60 Seconds
«
NOTES:
W*
*•
» "
to +200°C* 300°C*
mA
collector current when the base-emitter diode is open-circuited. and 30 1. This value applies between 2. Derate linearly to 175° C free-air temperature at the rate of 6.67 3. Derate the 10-watt rating linearly to 175°C case temperature at the rate of 66.7 mW/°C. Derate the 5-watt
mW/°C
(JEDEC
registered)
33.3 mW/°C. The JEDEC registered outline for these devices is TO-5. TO-39 falls within TO-5 with the exception of lead length. registered all applicable dete in effect at the time of publication. •JE DEC registered data. This data sheet contains ^This value is guaranteed by Texas Instruments in addition to the JEDEC registered value which is also shown. rating linearly to
175°C case temperature
at the rate of
USES CHIP NIB
Instruments TexasINCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
4-367
TYPES 2N50S8, 2N5059 N-P-N SILICON TRANSISTORS
*ol*ctrical characteristics at
23°C
fr«o-air
temperature (unless otherwise noted)
PARAMETER Breakdown Voltage
V||R|C«0
Collector-Base
V(K)CEO
Collector-Emitter
V|«R|EIO
Emitter-Base Breakdown Voltage
IcBO
Collector Cutoff Current
Breakdown Voltage
=
lc
== 30 mA,
U
Emitter Cutoff Current
100
=
100
Vc.
= =
VE .
=
V« = V« = Static
Hfe
Forward Current Transfer Ratio
= V CE =
Voe
VCE Base-Emitter Voltage
Vie
B
VcElut)
Collector-Emitter Saturation Voltage
M
Forward Current Transfer Ratio Collector-Base Capacitance
Ccb
NOTES:
4. S.
Thm
100 5
=
VcB
=
l
25 V, 25 V,
TA
=
250
300
250
V
7
6
V
25 V,
l
25 V,
lc
=
U
=
10 V,
10 mA, 0,
125°C
35
50
50
nA
20
20
/•»
10
10
nA
10
150
30
150
30
35
Note
V
300
10
l
25 V,
3 mA,
See Note 4
l
V,
25 V,
=
VCE
1,
V,
3 mA,
4 10 See tiote 4
0.82
0.82
See Note 4
0.85
0.85
See Note 4
1
f
=
20 MHz
f
=
1
8
1.5
1
1.5
MHz,
=
0.5 V,
|
Emitter-Base Capacitance
c
=
0,
f
=
1
poranMters mint be measured using puis* techniques.
t
p
—
300
cis,
duty cycle
<
V V
10
10
PF
75
75
Pf
MHz,
See Note 5
C^, and C. b are measured using three-terminal measurement techniques with the
V
8
See Note 5 Ve.
d,
=
= = 0, lc = E = E = 0, Ic = Ic = 5 mA Ic = 30 mA c = 100 mA Ic = 30 mA, Ta = -55°C Ic = 30 mA, c = 30 mA, Ic = 30 mA, Ie
100 V,
U= ll
Small-Signal Common-Emitter
A A
lc
Vc.
Iek.
2N5059 2NSOS8 UNIT MIN MAX MIN MAX
TES
2%.
third electrode (emitter ar collector respectively)
guarded.
THERMAL INFORMATION CASE TEMPERATURE DISSIPATION DERATING CURVE
FREE-AIR TEMPERATURE
DISSIPATION DERATING CURVE 12
1
.1
10
1 a
5
I
8
*
C
4 E 3
I
2
1
ClT
75 -
100
125
Free-Air Temperature
FIGURE
• Indicates
JEDEC
150
—°C
175
75
200 -
100
125
Case Temperature
150
— °C
175
FIGURE 2
1
registered data
PRINTED IN U.S.A.
4-368
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANV TIME IN
ORDER 10 IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES A5T5058, A5T5059 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 7011322, MAY 1970
HIGH-VOLTAGE SILECT * TRANSISTORS* FOR GENERAL PURPOSE AMPLIFIER APPLICATIONS IN LINE-OPERATED CIRCUITS •
Solid-State Relays
•
High-Voltage Inverters
•
Voltage Regulators
•
High-Voltage Indicator and Display Controls
mechanical data using a highly
designed for this purpose, These transistors are encapsulated in a plastic compound specifically soldering temperatures without mechanized process developed by Texas Instruments. The case will withstand conditions and are capable of meeting high-humidity under characteristics stable exhibit devices These deformation.
MIL-STD-202C, Method 106B. The
transistors are insensitive to light.
B A.
Lml diometw n nM
6.
load* having
NOTES-,
nwouwl
in
tonltetUd in
ttii»
Otoe
minimum dionwler (0.019) .hall b« within 0,007 of th.ir tru* petition. th* gaging plan* 0.054 below th« wating plan* of th» dwiw mlotiv* lo
a mo*imum-d«im«Ur package. C. All dimontioni aro in inch**.
absolute
maximum
ratings at
25°C
free-air
temperature (unless otherwise noted)
A5TS058
A5T5059
300V 300 v
250V 250v
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Continuous Device Dissipation at (or below) 25°C Lead Temperature (See Note 3) Continuous Device Dissipation at (or below) 25°C Case-and-Lead Temperature (See Note 4) .
.
...
1
.
2. 3.
150
•«
800
-
mA——* mW W
1.25 ^
1
.6
W
to
—
•
150C-*
260 C
•>
open-circuited. These values apply between O and 30 mA collector current when the base-emitter diode is Derate linearly to 150°C free-air temperature at the rate of 6.4 mW/°C. temperature is measured on the collector lead 1/16 inch Derate linearly to 1 50°C lead temperature at the rate of 10 mW/°C. Lead
from the 4.
""
*- -65°C
Storage Temperature Range Lead Temperature 1/1 6 Inch from Case for 10 Seconds
NOTES:
6V
7V
Emitter-Base Voltage
Continuous Collector Current
case.
at 25 C. Derate linearly to 150 This rating applies with the entire case (including the leads) maintained temperature at the rate of 12.8 mW/°C.
^Trademark of Texas Instruments
C
case-end-lead
USES CHIP N15
tu.S. Patent No. 3,439,238
Instruments Texas INCORPORATED POST OFFICE BOX 5012
DALLAS. TEXAS 75222
4-369
TYPES A5T5058. A5T5059 N-P-N SILICON TRANSISTORS electrical characteristics at
25° C free-air temperature (unless otherwise noted)
PARAMETER Breakdown Voltage
V(BR}CBO v (BR)CEO v (BR)EBO
Collector-Emitter Breakdown Voltage
ic= 100 uA, IC » 30 mA,
Emitter-Base Breakdown Voltage
lE
ICBO
Collector Cutoff Current
V CB VCB
Collector-Base
Emitter Cutoff Current
'EBO
hpE
Static
Forward Current Transfer Ratio
E=
l
ib = o,
= 100uA,
v CE(sat) •
B
Collector-Emitter Saturation Voltage Small-Signal
|
Common-Emitter
l
E
= 100 V,
l
E =
Forward Current Transfer Ratio
Cc b
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
NOTES:
250
V
300
250
7
6
V V
V CE
= 25 V,
l
V CE
- 25 V,
IC'O
B = 3 mA,
l
B - 3 mA,
IC -
= 25 V,
c
l
V CB =10V,
l
35 See Note 5
= 0.5 V,
10
nA
10
150
35
5.
30 mA,
= 10
mA,
E =0,
See Note 5 See Note 5 f
= 20
f
=
1
MHz
ic = o.
f
=
1
0.82
0.82
0.85
0.85
1
8
1.5
is
1
1.5
V V
8
MHz, 10
10
pF
75
75
pF
MHz,
These parameters must be measured using pulse techniques. tw = 300 fis, duty cycle < 2%. C c b and C e b measurements employ a three- terminal capacitance bridge incorporating a guard or collector, respectively)
150
30
See Note 6
6.
30
10
30
See Note 6
V EB
»A
10
-55°C
l
IC -
nA
2
30 mA,
=
mA lc = 30 mA
= 25 V,
50
2 10
mA IC = 30 mA c = 100 mA IC -
50
T A = 75°C
0,
IC " 5
V CE
300
-0
= 100 V.
V EB = 5V, V CE = 25 V, V CE - 25 V,
V CE
Base-Emitter Voltage
See Note 5
ic = o
TA VfjE
A5T5068 A5T5059 UNIT MIN MAX MIN MAX
TEST CONDITIONS
circuit.
The
third electrode (emitter
connected to the guard terminal of the bridge.
THERMAL INFORMATION DISSIPATION DERATING CURVES 1.8
|
V
Con
rolled
C
ise-and-L ;ad
Tempe
ature
1.4
.5
— Con
1.2
•
rolled Le ad
Te mperatur e
0.8
0.6
0.4
Controlled Free-Air
"^S
Temperature
25
50
75
100
150
T—Temperature—°C FIGURE
1
PRINTED IN U.S.A.
4-370
Texas INCORPORATED Instruments POST OFFICE BOX
5012
•
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N5086. 2N5087. A5T5086, ABT5087 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 7311921, MARCH 1973
SILECT t TRANSISTORS* FOR LOW-LEVEL, LOW-NOISE AUDIO AMPLIFIER APPLICATIONS • •
For Complementary Use with N-P-N Types 2N5209, 2N5210, A5T5209, A5T5210 Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil Pin-Circle Configuration
mechanical data using a highly
designed for this purpose, These transistors are encapsulated in a plastic compound specifically soldering temperatures without mechanized process developed by Texas Instruments. The case will withstand deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C, Method 106B. The transistors are insensitive to light.
2N5086, 2N5087
I
B
EBC NOTES:
A. Lead diameter B.
AH dimensions
is
not controlled
in this area.
are in inches.
'ALL JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE A5T5086, A5T5087
0.200 „,. OIA
*o.oos
1 0.160
* 0.010"
+ 0.002
i 3
, „,. '-0.001 DIA IEAOS
3.COUECTOR
A. Lead diameter is not controlled in this area. B. Leads hawing maximum diameter (0.0191 shall be within 0.007 of their true positions measured relative to a maximumin the gaging plane 0.054 below the seating plane of the device
diameter package. C. All dimensions are in inches.
maximum
absolute
ratings at
25°C
free-air
temperature (unless otherwise noted)
-50V _50V * ~3 V .
Col lector- Base Voltage Collector-Emitter Voltage (See Note
1)
Emitter-Base Voltage
~ 5u mA o 1625 mW§
Continuous Collector Current
Continuous Device Dissipation at
(or below)
25 C
Free-air
Temperature (See Note 2)
|310mW* 1^65°Cto 150°C§
Storage Temperature Range
\-55°C
to 135°C*
Jt260°C§ Lead Temperature 1/16 Inch from Case for 10 Seconds
(230°C*
This value applies when the base-emitter diode is open-circuited. (JEDEC registered) Derate the 625-mW rating linearly to 160°C free-air temperature at the rate of 5 mW/°C. Derate the 310-mW rating linearly to 135°C free-air temperature at the rate of 2.82 mW/ C. effect •The asterisk identifies JEDEC registered data for the 2N5086 and 2N5087 only. This data sheet contains all applicable registered data in at the time of publication, tu.S. Patent No. 3,439,238 trademark of Texas Instruments USES CHIP P18 §Texas Instruments guarantees these values in addition to the JEDEC registered values which are also shown.
NOTES:
1
.
2.
Instruments Texas INCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
4-371
TYPES 2N5086. 2N5087. A5T5086. A5T5087 P-N-P SILICON TRANSISTORS
'electrical characteristics at 25° C free-air
temperature
PARAMETER Breakdown Voltage
V(BR)CBO v (BR)CEO
Collector-Base
'CBO
Collector Cutoff Current
!
Collector-Emitter
Forward Current Transfer Ratio
"FE
Static
V BE
Base-Emitter Voltage
VcE(sat)
Collector-Emitter Saturation Voltage Small-Signal
hfe
I
Common-Emitter
Forward Current Transfer Ratio
«T
Transition Frequency
Ccb
Collector-Base Capacitance
l
E =
Ic~— l mA, Ib = o. V C B - -35 V, E = V EB - -3 V, ic = o V CE = -5 V, Ic=-100mA V C E--5V, IC=-1 mA V C E - -5 V. )C = -10mA, V CE = -5 V. lc = — 1 mA
See Note 3
MIN -50 -50
B = -1
mA,
l
c
=
150
-10 mA,
See Note 3 f
VCE
-
-5 V,
IC =
—1 mA,
V CE VCB
-
-5 V, -5 V.
IC =
-500mA, See Note 4
-
"E-0,
f
-
1
kHz
500
V -50 -50
250
nA nA
800
250 250
150
150
V
-50 -50
150 See Note 3
UNIT
MAX MIN MAX
-50 -50
I
Emitter Cutoff Current
EBO
IOOuA.
IC
Breakdown Voltage
2N5087 A5T5087
2N5086 A5T5086
TEST CONDITIONS
-0.85
-0.85
V
-0.3
-0.3
V
600
40
250
900
MHz
40
= 140 kHz,
4
See Note 5
pF
4
'operating characteristics at 25° C free-air temperature
MIN Spot Noise Figure
F
=
f-
kHz
1
VCE
Average Noise Figure
F
V CE
=
-5V, -5V,
l
c --100/iA, R G =3kU,
A5T5087
MAX MIN
UNIT
MAX
3
2
dB
3
2
dB
RQ=10kn,
Ic--20mA,
See Note 6
Noise Bandwidth = 15.7 kHz,
NOTES:
2N5087
2N5086 A5T5086
TEST CONDITIONS
PARAMETER
5.
These parameters must be measured using pulse techniques, t^ = 300 M*- duty cycle < 2%. f-j-, the (hf e response with frequency is extrapolated at the rate of —6 dB per octave from f = 20 MHz to the frequency at which |hf e = 1. •orating a guard circuit. The emitter is connected to the C C b measuirement employs a three-terminal capacitance bridge incorporating
6.
guard terminal of the bridge. Average Noise Figure is measured
3. 4.
To obtain
|
|
in
an amplifier with response
down 3 dB
at
10 Hz and 10 kHz and a high-frequency
rolloff of
6dB/octave.
"The
asterisk identifies
JEDEC
registered data for the 2 N 5086
and 2N5087 only.
THERMAL INFORMATION DISSIPATION DERATING
CURVE
a 8
600
5 | Q
500
5
400
I
\
I
Guar a Meed
300
3 E
200
JEDEC
Registe
25
50
75
100
Tft— Free-Air Temperature—
125
150
C
PRINTED IN
4-372
U.S.A.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIIIE.
TYPES A5T5172, A7T5172. A8T5172 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 7311770, FEBRUARY 1973
SILECTt TRANSISTORS* FOR LOW-COST. GENERAL PURPOSE AMPLIFIER APPLICATIONS Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil
•
Pin-Circle Configuration
•
A7T5172
Plug-in
is
Replacement for 2N5172 (TO-98 Package)
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting Ml L-STD-202C, Method 106B. The transistors are insensitive to light.
A5T5172
T— 0.1M
* 0.010
B
A. Lead diameter It not controlled In this area. true B. Leed» having maximum diameter (0.019) ihall be within 0.007 of their positions measured In the gaging plene 0.054 below the Mating plane of the device relative to a maximum-diameter package. C.
All
dimensions are
in inches.
A7T5172. A8T5172
ALL JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE
r
T
A7T5172
+ 0003
——
-0.0M
i_
NOTES:
*
B. All
maximum
005
is not controlled dimensions are in inches.
in this area.
I EBC
LEADS
DEVICE
absolute
D.IUO
i
A. Lead diameter
A7T5172 A8T5172
A8TS172
iffe
0.300
3
1
2
Emitter
Collector
Base
Emitter
Base
Collector
ratings at 25° C free-air temperature (unless otherwise noted)
Collector-Emitter Voltage (See Note 1)
5V
Emitter-Base Voltage
Continuous Collector Current Continuous Device Dissipation at (or below) 25° C Free-Air Temperature (See Note 2) Storage Temperature Range Lead Temperature 1/16 Inch from Case for 60 Seconds
NOTES:
1.
2.
v v
25 25
Collector-Base Voltage
„
•
100 mA 625 m
W
„
-65°Cto150 C o 260 C
This value applies when the base-emitter diode Is open-circuited. Derate linearlv to 150°C free-air temperature at the rate of 5 mW/ C.
^Trademork of Texas Instruments
USES CHIP N21
tu.S. Patent No. 3,439,238
Instruments TexasINCORPORATED POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
4-373
TYPES A5T5172. A7T5172. A8T5172 N-P-N SILICON TRANSISTORS electrical characteristics at
25° C free-air temperature
PARAMETER v (BR)CEO
Collector-Emitter
'CBO
Collector Cutoff Current
'EBO hfE
Static
TEST CONDITIONS
Breakdown Voltage
10 mA, Ir V C B = 25V, E = IC
Vqe
Base-Emitter Voltage
V EB -5V, c = Vce -10 V, lc = Vce -10 V, lc -
VCE(sat)
Collector-Emitter Saturation Voltage
Ir
100
1
mA,
lc
mA, See Note 3 10 mA, See Note 3 - 10 mA, See Note 3 10
Vcb "
Forward-Current Transfer Ratio
Vcb
Collector-Base Capacitance
10 V, lc - 10 mA,
= 10V, Ie-0,
See Note 4
3. 4.
100 0.5
nA nA
500 1.2
0.25
V V
Common-Emitter
nfg
C c [j
=
V 100
l
Forward Currant Transfer Ratio
MAX UNIT
25
l
Emitter Cutoff Current
Small-Signal
MIN
See Note 3
0,
f
=
1
f
=
1MHz,
kHz
100
750
1.6
10
These parameters must be measured using pulse techniques, tyy = 300 Ms, duty cycle < 2%. C cb measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The emitter guard terminal of the bridge.
is
pF
connected to the
THERMAL INFORMATION
FREE-AIR TEMPERATURE DISSIPATION DERATING CURVE
S E I
700
600
500 400 300 200 100
S I
I-
n 25
50
75
100
125
150
Ta— Free-Air Temperature— °C
FIGURE
1
PRINTED IN
4-374
U.S.A.
Texas INCORPORATED Instruments POST OFFICE BOX 9012
DALLAS. TEXAS 7S222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N5209, 2NS210, A5T5209, A5T5210 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 7311922, JUNE 1973
SlLECTt TRANSISTORS*
FOR LOW-LEVEL, LOW-NOISE AUDIO AMPLIFIER APPLICATIONS For Complementary Use with P-N-P Types 2N5086, 2N5087, A5T5086. A5T5087 Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil Pin-Circle Configuration
mechanical data designed for this purpose, usin B a highly
These transistors are encapsulated in a plastic compound specifically will withstand soldering temperatures without mechanized process developed by Texas Instruments. The case conditions and are capable of meeting high-humidity under characteristics stable exhibit deformation. These devices MIL-STD-202C, Method 106B. The transistors are insensitive to light. 1
2NS208, 2N6210
I EBC NOTES:
A.
Lud
diameter
It
not controlled
In this area.
B. All dimensions are in inches.
'ALL J6DEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE
A. Lead diameter is not controlled in this area. positions measured B. Leads having maximum diameter (0.019) shell be within 0.007 of their true relative to a mexlmum In the gaging plane 0.064 below the seating plane of the device dlemeter peckage. C. All
absolute
dimensions are
maximum
ratings at
In inches.
25°C
free-air
temperature (unless otherwise noted)
50V * 50 V
Collector-Base Voltage
Collector-Emitter Voltage (See Note
1
4.5
Emitter-Base Voltage
V^.
mA # 100 mA EBO
Emitter Cutoff Current
V C B = -10V, V EB = -3 V,
hFE
Static
VBE v CE(sat)
VcE
Forward Current Transfer Ratio
=
lB = 0.
ic = l
=
-10V,
lB =
'C lc =
Collector-Emitter Saturation Voltage
IB
o
-10mA
Transition Frequency
ccb
Collector-Base Capacitance
5.
"The
30
600
See Note 3
-1.1
V
See Note 3
-0.5
=
V
lc -
-50 mA,
f
V C E = -10V, V C B = -5 V,
lc =
-20 mA,
See Note 4
0,
f
IE
=
=
=
1
1
kHz
30
1800
MHz
100
MHz, 15
See Note 5
I
nA nA
25 See Note 3
-10V,
Vce
Forward Current Transfer Ratio fT
3.
V V V
Common-Emitter
Small-Signal
hfe
4.
MAX UNIT
-100 -100
o
-50 mA IC - -1 50 mA, lc = -150 mA,
—15 mA, = —15 mA,
See Note 3
MIN -15 -15 -3
E =
ic =
V CE = -10V,
Base-Emitter Voltage
E =
l
pF
These parameters must be measured using pulse techniques. t = 300 Ms, duty cycle < 2%. w To obtain f T the |hf e response with frequency is extrapolated at the rate of — 6 dB per octave from f = 20 MHz to the frequency at which |hf e |= 1. C cb measurement employs a three-terminel capacitance bridge incorporating a guard circuit. The emitter is connected to the guard terminal of the bridge. ,
asterisk identifies
JEDEC
3
|
registered data for the
2NS221
only.
THERMAL INFORMATION
DISSIPATION DERATING
|
CURVE
800
I
§
700
Q.
a
600
5 a
500
\1
400
1
Guara nteed
300
200
JEDEC
Registe red
^
100
25
50
75
100
125
150
TA-Free-Air Temperature-°C
PRINTED IN U.S.A.
4-382
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N5222, A6T5222 N-P-N SILICON TRANSISTORS BULLETIN NO. DL-S 731 1929, MARCH 1973
SILECT t TRANSISTORS): For
RF
Amplifier, Mixer, and Video IF Applications in Radio and Television Receivers
Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil Pin-Circle Configuration
mechanical data highly
purpose, using a These transistors are encapsulated in a plastic compound specifically designed for this temperatures without mechanized process developed by Texas Instruments. The case will withstand soldering deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C, Method 106B. The transistors are insensitive to light.
2N6222 .
T 0.K0
+ MOS
l; O.IM_
-tms
i_
T
o.ioo *000J J
-,„+O.0OJ
SL -
0.050x0.003
NOTES:
is not controlled dimensions are in inches.
A. Lead diameter B.
All
COUKTOI timwt
t
-BAM
-3 IEADS Q«17 * few
BEC
in this area.
"ALL JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE A6T6222
A. Lead diamater is not controlled in this area. B. Leads having maximum diameter (0.019) shall be within 0.007 of their true positions measured in the gaging plane 0.064 below the seating plane of the device relative to a maximum
diameter package. C. All dimensions are In Inches.
L absolute
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
20v * 15V
Collector-Base Voltage
Collector-Emitter Voltage (See Note 1)
Emitter-Base Voltage Continuous Collector Current
\
50
2V # mA #
\ 310 mw*
Continuous Device Dissipation at (or below) 25° C Free-air Temperature (See Note 2)
o
r-65°Cto150 C§ < -55°C
Storage Temperature Range
k
to 135°C*
f260°C§ Lead Temperature 1/16 Inch from Case for 60 Seconds
NOTES:
1.
ThU valua
2. Darata tha
•Tha
appllaa
whan
626-mW
tha baaa-amlttar dloda
rating linearly to
160°C
la
\230°C*
opan-clrcultad.
fraa-alr
tamparatura at tha rata of 5 mW/°C. Derata tha
rating llnaarly to 136° C fraa-alr tamparatura at tha rata of 2.82 mW/°C. attarltk Idantlflaa JEDEC raglitarad data for tha 2N5222 onlv. Thli data ahaat contalnt
all
310-mW (JEDEC
raglitarad)
appllcabla raglnarad data In affact at tha tlma
of publication. , Tradamark of Taxai Inatrumantt.
tu.S. Patant No. 3,439,238. STaxaa Inatrumann guarantaai thaaa valuaa
In
addition to tha JE DEC raglatarad valuaa which ara alto ahown.
Instruments TexasINCORPORATED POST OPTICS BOX 8012
•
DALLAS, TEXAS 7»28»
USES CHIP N24
4-383
.
TYPES 2NS222, A6T5222 N-P-N SILICON TRANSISTORS
'electrical characteristics at 26° C free-air
temperature
PARAMETER v (BR)CBO
Colltctor-BaM Breakdown Voltage
V(BR)CEO V(BR)EBO 'CBO 'EBO hpE
Collector-Emitter Breakdown Voltage
V BE v CE(set)
TEST CONDITIONS IC- 100 m A, lE-O See Note 3 IC " 1 mA, ib-o,
Emitter-Bate Breakdown Voltage
Icj
Emitter Cutoff Current Static
Forward Current Transfer Ratio
Common-Emitter
Forward Current Transfer Ratio Transition Frequency
Cct,
Collector-Base Capacitance
3.
4.
V V V
16
2
100
ic-o
100
E
IC "
4 mA,
Vce-IOV,
IC"4mA,
V C E - 10 V, VC b - 16 V,
IC - 4
IC "
See Note 3
20
4
mA,
1.2 1
f
-
1
kHz
See Note 4
20
nA nA
1600
V V
3000
MHz
460
f-1 MHz,
"E-0,
1.3
See Note 5
NOTES:
MAX UNIT
20
-0
l
mA IC " 4 mA
Collector-Emitter Saturation Voltage
fj
ic-o
100m A,
IB" 0.4mA, IB" 0.4 mA,
Base-Emitter Voltage
Small-Signal
-
Vcb-IOV, VEB-2V, Vce-IOV,
Collector Cutoff Current
MIN
pF
These parameters must be measured using pulse techniques. t w - 300 M». duty cycle < 2%. the |hfa response with frequency It extrapolated at the rete of -6 dB per octeve from f - 100 MHz to the frequency et which |hf, - 1 CC b measurement employs e three-terminel cepacltance bridge Incorporeting e guard circuit. The emitter is connected to the
To obtain f T
,
|
|
5.
guerd termtnel of the bridge.
'The
asterisk Identifies
JEDEC
registered dete for the
2NB222
only.
THERMAL INFORMATION
DISSIPATION DERATING
S
800
E c o
700
S
600
CURVE
I
a 8 >
500
a S §
\1
400
I
Guara nteed
300
200
JEDEC
Registc red
"^
100 I
26
50
Ta— Free-Air
75
100
125
150
Temperature— °C
PRINTED IN
4-384
U.S.A.
Texas INCORPORATED Instruments ro*T oPFioa aox ten
•
ballac, tbxac Tiata
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MIKE CHANGES AT ANY TIME IN
ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIBLE.
TYPES 2N6223, A6T6223 N-P-N SILICON TRANSISTORS BULLETIN NO. OL-S 7311930. MARCH 1973-REVISEO DECEMBER 1973
SILECT* TRANSISTORS* •
For Low-Level, Small-Signal, General Purpose Amplifier and Oscillator Applications
•
Rugged One-Piece Construction with In-Line Leads or Standard TO-18 100-mil Pin-Circle Configuration
mechanical data purpose, using a highly
designed for this These transistors are encapsulated in a plastic compound specifically withstand soldering temperatures without mechanized process developed by Texas Instruments. The case will deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C, Method 106B. The transistors are insensitive to light.
^
2N6223 -m|«- o.o»t^on
a) 4-O.OOS
-COM
"71
ffe OOUICTOt i.too
I
t * O.0OS O.OOS J
BASf
1
I
iMmflt *>
NOTES:
Q.OM*0.
EBC A. Lead diameter Is not controlled B. All dimensions are in inches.
In thli area.
'ALL JEDEC TO-92 DIMENSIONS AND NOTES ARE APPLICABLE A6T6223
T O.l*0_
NOTES:
absolute
A. Lead diameter It not controlled in this area. B. Leads having maximum diameter (0.019) shall be within 0.007 of their true position! measured In the gaging plane 0.054 below the seating plane of the device relative to a maximum diameter package. C. All dimensions are in inches.
maximum
ratings at 25° C free-air temperature (unless otherwise noted)
v*
Collector-Base Voltage
25
Collector-Emitter Voltage (See Note 1)
20V 3
Emitter-Base Voltage
100
Continuous Collector Current
Continuous Device Dissipation at
(or
below) 25°C Free-Air Temperature (See Note 2)
Storage Temperature Range
)(
^350 mW j
MX)
\l
lm
=
V
-1
Small-Signal Common-Source
.
\ in/. lm,r "'
..
f
-30 -1
-1
Input Capadtance
Common-Source Short-Qrcuit
,
*
Short-Circuit
-30 -1
l
Small-Signal Common-Source '"*'
-30
6
V6s
1
1
2N5245 2N5246 2N5247 UNIT MIN MAX MIN MAX MIN MAX
CONDITIONS
TEXAS 7B222
4
TYPES 2N5245 THRU 2N5247 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS "PARAMETER MEASUREMENT INFORMATION
400
-It-i
MHz
n
FROM50-G SOURCE 100
MHz©-
1(
©400 MHz rh TO50-O
\C-
c4
c«
LOAD
Rej
*
C>
-© \ -lec
j
m
rh
'00)
7
rh Vdd
CIRCUIT
COMPONENT INFORMATION cons
CAPACITORS TOO
MHz
400 MHz
c,
not used
1.8 pF
c.
7pF
not used
c,
1-12
0.8-8
pf
8.5 L,
Cs
— 12
0.8-8
pF
400 MHz T
copper, tapped 2.5
from bottom, 3/8" 15
1
T,#l«
10, 1
1/4"
1.25 T,
3/8"
long
#20
3/16"
copper,
ID,
long
pF
27 pF
1000 pf
c,
MHz
100
L>
T,
#20
enameled copper,
close-wound,
1/4"
4
#20
T,
enameled copper,
close-wound,
ID
3/16"
ID
pF 13.5 T,
c.
not used
lpF
c7
3pf
not used
L,
#16
copper, tapped 5 T
from bottom, 3/8"
ID, 1
0.5
1/4" long
T,
#20
copper,
1/2"
ID,
no length
FIGURE 1 - SCHEMATIC AND COMPONENT INFORMATION FOR 100-MHz AND 400-MHz NEUTRALIZED INSERTION POWER 6AIN AND SPOT NOISE FIOURE TEST CIRCUITS •Indlcatas
JEDEC raglitmd data
TYPICAL CHARACTERISTICS 2N5245
CORRELATION OF SMALL-SIGNAL COMMON-SOURCE FORWARD TRANSFER ADMITTANCE and GATE-SOURCE CUTOFF VOLTAGE
AIL TYPES
GATE REVERSE CURRENT
with
VI
INDIVIDUAL DEVICE ZERO-GATE-VOLTAGE DRAIN CURRENT
FREE-AIR TEMPERATURE
-8
-1 1
-0.7
VDS
v os
U
-0.4
10 keV (reactor spectrum).
switching characteristics at 25°C free-air temperature
Delay Time
tr
Rise
t.
Storage Time
t|
Fall
Time
Time
MIN
TEST CONDITIONS}
PARAMETER td
Vce
=
V^ioffl
Vce l
M2 |
-3
=
V,
lc
=
-20 mA,
Ibid
=
See Figure
0.7 V,
= -3 V, = 4 mA,
lc
=
-20 mA,
Ibid
=
4-398
JEDEC
registered data
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 75222
1
-4 mA,
See Figure
$V°oltoge and current values shown are nominal; exact values vary slightly with transistor and diode parameters.
'Indicates
-4 mA,
1
MAX
UNIT
12
ns
8
ns
70
ns
16
ns
—
.
TYPE 2N5332 P-N-P SILICON TRANSISTOR "PARAMETER MEASUREMENT INFORMATION
Mm
(,
+3
V
1
4.7
V
1
INPUT
V
-3
III — I
H
(•-'"-H H'. la-
II
I
II
Vw% TEST CIRCUIT DOTES:
a. b.
•Indicates
Tbi Input waveform
Wavaforms
JEDEC
an
Is
FIGURE
»l
fI
OUTPUT
ioW^I
VOLTAGE WAVEFORMS
1
supplied by a geaerater with the relieving characteristics:
monlterad an en escillescepe with the fellewiag characteristics:
|
-H 9W,\
I*-
Jr90%
I
mi
«t-»—«4
I
-H »r
INPUT
Wl
tr
<
U.< 1
= Q, > ! > 100 SO
tP
<
300 as, duty cycla
<
kfl, Ci»
r»,
2%.
10 pF.
registered data
TYPICAL CHARACTERISTICS, POST IRRADIATION STATIC
FORWARD CURRENT TRANSFER RATIO
STATIC
FORWARD CURRENT TRANSFER RATIO
NEUTRON FLUENCE
COLl ECTOR CURRENT
E * 10
kaV
(ftMctor Sptetivtt.).
m rniffii -
Vqltxj at
>
""""
I
I
I
II II
-
—
I
L,m "
SompUt
4,10"
FIGURE 2
FIOURE 3
COLLECTOR-EMITTER SATURATION VOLTAGE
COLLECTOR CUTOFF CURRENT
NEUTRON FLUENCE
NEUTRON FLUENCE __j
-0.4
IS
-
*.
_
1,-0
-
E k 10
ffi
>
WV
(Rmc*tt Spec
i
-
-0.2
1 J
If
-0.07
Lg
-4
mA |
- -20 mi
E * 10
..
-0.7
3-0.4
UV
I
Q-0.2
u
:
" NottH
4k10
,j
— Nturron
.
11
1LLU 10"
'to»
4«10J*
Flu.
FIGURE 4
13
NOTE
4: Tbtst
f This
tm
ponmttm
must bt
mwwti
indicstts typical btfcavlar tf
tp
— 20
it
M
4xl0
M
io«
riA
Common-Source
Forward Transfer Admittance Smell-Signal
mmho
0.8
MIN MAX MIN MAX -40 -40
l
VGS
Ivosl
f- 100 MHz
25° C free-air temperature (unless otherwise noted)
PARAMETER V (BRIGSS
VGS - 0,
See Note 3
Forward Transfer Conductence
•electrical characteristics at
1
'
1
V nA uA
V
V
mA mmho
kHz,
See Note 3
Common-Source
UNIT
20 umho
20
Output Admittance
Common-Source
c iss ^rss
Short-Circuit
Input Cepacitance
V DS -=15V,
Common-Source
See Note 3
Short-Circuit
Vqs
- 0,
f
-
1
MHz,
6
6
pF
2
2
pF
Reverse Transfer Capacitance Smell-Signal
flfs
V DS
Common-Source
2.
=
15V,
V GS
- 0,
f
= 100
1.4
Thlt parameter mutt be measured using pulse techniques. t w - 300 \i%, duty cycle < 2%. These parameters must be measured with bias conditions applied for less than 5 seconds to avoid overheating.
registered data
*The fourth
MHz,
See Note 3
Forward Transfer Conductence
3.
•JEDEC
Vqs
-2
PA
0.5
See Note 3
Common-Source
-4
Output Admittance
Cm
NOTES:
See Note 2
Common-Source
Forward Transfer Admittance Small-Signal
-0.1
-0.1
l
lead (case)
Is
connected to the source for
all
measurements.
Instruments Texas INCORPORATED POST OFFICE SOX 5012
DALLAS, TSXAS 7S222
1.7
mmho
TYPES 2NS3S8 THRU 2NS364 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS 'electrical characteristics at
25°C
free-air
temperature (unless otherwise noted) TEST CONDITIONS*
PARAMETER
'GSS
Gate Reverse Current
v GS(off)
Gate-Source Cutoff Voltage
lG--10|»A. V DS -0 - -20 V, V DS -0 V GS - -20 V, V DS - 0, T A « 150°C V DS -15V, Iq- 100 nA
Gate-Source Voltage
V DS -15V, Vqs -15 V,
V (BR)GSS
Gate-Source Breakdown Voltage
Vqs
VGS
Vqs-
Small-Signal
kl
Small-Signal
-0.1
-0.1
-2 -1.3
-8 -2.5
-7 -2.5 -5
-2
V GS -0,
MA
-0.1
-8
V
-6
V -2
-6
4
8
7
14
9
18
mA
2
5.5
2.5
6
2.7
6.5
mmho
See Note 2
Common-Source
V DS -15V,
Forward Transfer Admittance
tail
15 V.
V DS -15V,
Zero-Gate-Voltage Drain Current
loss
mA Ip -0.7 mA lp - 0.9 mA ID " 0.4
2NB364 2N5362 2N6363 UNIT MIN MAX MIN MAX MIN MAX -40 -40 -40 V -0.1 -0.1 -0.1 nA
Common-Source
f
=
Vqs
See Note 3
kHz,
1
= o.
60 Mmho
40
40
6
6
6
pF
2
2
2
PF
Output Admittance
Common-Source Ciss
Crss
Short-Circuit
Input Capacitance
V DS -15V,
Common-Source
f
Short-Circuit
-
V GS
MHz,
1
- 0,
See Note 3
Reverse Transfer Capacitance Small-Signal
9fs
V GS
V DS =15V,
Common-Source
Forward Transfer Conductance
= 100 MHz,
f
- 0, 1.9
mmho
2.2
2.1
See Note 3
'operating characteristics at 25° C free-air temperature
Vqs -15 V, Rq - 1 MO,
Common-Source
NF
Spot Noise Figure
NOTES:
2. 3.
ALL TYPES
'
TEST CONDITIONS 1
PARAMETER
UNIT
MAX
MIN
f- 100 Hz,
Vqs-0,
dB
2.5
See Note 3
This parameter must be measured using pulse techniques. t w - 300 M»» duty cycle < 2%. These parameters must be measured with bias conditions applied for less than 5 seconds to avoid overheating.
•JEDEC '('The
registered data fourth lead (ease)
is
connected to the source for
all
measurements.
TYPICAL CHARACTERISTICS 2NB362
THRU 2N5364
NORMALIZED SMALL-SI ON AL COMMON40URCE FORWARD TRANSFER ADMITTANCE
GATE CUTOFF CURRENT
NOMINAL CHARACTERISTIC VALUES FOR NORMALIZED CURVES
FREE-AIR TEMPERATURE
NORMALIZED GATE-SOURCE VOLTAGE
ATVoi-16V,TA-2rc
M
+4.7
V
OUTPUT 1
INPUT
kn
0-^IV\r-t
VOLTAGE WAVEFORMS
TEST CIRCUIT
FIGURE MOTES:
•
JEDEC
o.
Tha Input wovatoinu
b.
Nanfoimi
ua wppllad
k»
OUT?UT
o^l 1
Z^,
by g ganurator wllh lha following dnuctuiiliui
ora monltotad on on ottlllouopa wllh tha following ehotoctarlitlci:
l
r
<
=
SO SI,
t jn
nt,
1
l
>
>
p
300 ni, duly cyclt
100 HI, C in
<
<
2%.
10 pF.
taglitirad doto
TYPICAL CHARACTERISTICS, POST IRRADIATION
D STATIC
STATIC
FORWARD CURRENT TRANSFER RATIO
FORWARD CURRENT TRANSFER RATIO VI
VI
100
70
COLLECTOR CURRENT
—y--
NEUTRON FLUENCE
N=F -'.I
40
-lxio'
4
20
< '2x1 ,14
i
^
U-l
TT^
Z!_
-t-ttttt
•-
lxl0
1S
HIM
I
VC6
-2Vl >r
Ta =
1
— Ntutron Fluamee — n/at?
NOTE
5:
bahmlor of o
onto
4
10
— Collector Currant — mA
40
100
FIGURE 3
Thaso porontelars mutt bt mtoiurad using pulia tachniquus. Indlcolll typlcol
c
111
J 1
l
FIGURE 2
tTHi com
|
0.4
0.1
*
2.S«C
Sw N.=1.5 Mil |
llll p«ictrum)
f
p
hovlog Iho limit
= 300 mbm
fit,
of b
duty cyda
K=
<
2%.
30 ot V CE
=
1
V,
*
=
0.
Instruments Texas INCORPORATED f»osT
omei box
soia
•
daila*. tixas 79*22
4409
TYPE 2NS399 N-P-N SILICON TRANSISTOR TYPICAL CHARACTERISTICS, POST IRRADIATION COLLECTOR CUTOFF CURRENT VS
NEUTRON FLUENCE
B
u
4
10" 4xlO ' Neutron Fluence
—
4x10"
— n/cm*
COLLECTOR-EMITTER SATURATION VOLTAGE
NEUTRON FLUENCE 0.7
-
I
"
0.4
0.2
= 20 mA
e
c= 4
l
- E
mA
* 10
lte\
-
TA = 25°C
.
See Note 4
0.1
0.07 i
0.04
0.02
0.01 is
UK ii
10
10"
j
*
— Neutron
Fluence
Ixl j'<
— n/cm*
FIGURE 5
H0TE
4410
A:
rhm
paronfirc must b»
mmmtd using
puht lK*niqi>«.
I
=
300 /a, inly cyclt
< 2%.
Texas INCORPORATED Instruments POST OFFICE BOX 9012
•
DALLAS. TEXAS 78823
io'J
r
TYPE 2NS39S N-P-N SILICON TRANSISTOR TYPICAL CHARACTERISTICS FORWARD CURRENT TRANSFER RATIO
STATIC
COLLECTOR CUTOFF CURRENT
vs
vs
COLLECTOR CURRENT
FREE-MR TEMPERATURE
^^
100 :
l
E =
=
1000
700 !
Vci = 20
400
&
V_
j5
c 15
==
Ta
E
VC , =
125°C
i—
V^
w* " -Ta
c £ 3
v
'
^C ^S
u »**VC , = 10
V
•;?"'
»»-
'•
**
0.1
^Vfc,
=
i V
0.01
—VCE
=
5\1
=-VCE
=
n/
See Note 4I 1
0.001
50 Ta
75
100
0.4
125
— Free-Air Temperature — °C
l
c
—
4 1 Collector Current
COLLECTOR-EMITTER SATURATION VOLTAGE
VOLTAGE
VS
COLLECTOR CURRENT
vs
COLLECTOR CURRENT 'c _
1
=5
-
>
—
1.6
B
FIGURE 7
FIGURE «
BASE-EMITTER
100 -
-'C
1
1
T---
0-7
1
&
1.4
Ni>te
e 4
'
5
0.4
8
1
£
U
1 g
0.6
Ta
25°C 1
£
0.1
J
0.07
e
o.s
-Ta
\S°C
T
i
0.2
5
1.0
* 25°C
-Ta = -55°C
s
= 125"C
J
I
r
0.04
/
,
I
(
0.4
L
0.02
0.2
J? 0.4
1
lc
—
4
10 Collector Current
— mA
40
0.1
100
0.4 lc
—
1
4
Collector Current
10
— mA
40
100
FIGURE 8 DOTE
4:
Than parameters must he measured Ming pah*
techniques. t
p
=
300
/is,
duly cycle
<
2%.
Instruments Texas INCORPORATED POST OFFICE BOX SOI 2
•
O AULAS. TEXAS 75222
4411
TYPE 2NS399 N-P-N SILICON TRANSISTOR TYPICAL CHARACTERISTICS SMALL-SIGNAL COMMON-EMITTER FORWARD CURRENT TRANSFER RATIO
SMALL-SIGNAL COMMON-EMITTER INPUT IMPEDANCE vs
COLLECTOR CURRENT
COLLECTOR CURRENT - 9 f
=
ta
VCE
kh
f,l
response
using pulse techniques,
is
t
300
w-
1
us,
-6dB
extrapolated at the rata of
-250 uA, Rq -
1
kfl,
MAX dB
See Note 5
5.7 kHz,
duty cycle
<
2%.
par octave from
f
- 100
MHz
to the frequency at which
fcv.i-i6.
Average
NolM
Figure
is
measured
In
en amplifier with reaponsa
down 3 dB
at
10 Hz and 10 kHz and
a high-frequency rolloff of
6dB/octave.
'The
esterlsk Indlentlfies
JEOEC
registered dete for the
2N5400 and 2N5401
only.
PRINTED IN U.S.A.
Instruments Texas INCORPORATED CHANGES AI ANY TIME TEXAS IHSIIUMtHTS KSilVES THE IIGHT 10 SURE THE 1EST W0DUC1 fOSSIUE. IN OIDM 10 iWWWE DESIGN AHO TO HIFflt
POST OFFICE BOX B012
•
DALLAS. TEXAS 75332
4-415
TYPES 2NS447, 2 N 5448 P-N-P SILICON TRANSISTORS BULLETIN NO. DL-S 731 1870, MARCH 1973
SlkfiCI1
"
TRANSISTORS*
•
For Medium-Power Amplifiers, Class
B Audio
•
Also Available
2N3702, 2N3703
•
For Complementary Use with 2N6449, 2N5450, and 2N5451
in
TO-92 Versions
.
.
.
Outputs, Hi-Fi Drivers
mechanical data These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation. These devices exhibit stable characteristics under high-humidity conditions and are capable of meeting MIL-STD-202C, Method 106B. The transistors are Insensitive to light.
•CASE OUTLINE
—
-
=F
0.1*0.
0.100 ...
*0*0I * DI
*0.0I0
J_
-
M "-oToof "* 111*01
0.115. 9: 0.003
-
A. laad dlematar
It
t
I-COUKTOI
net centrellad In tnh eiee.
lMd (
1.
having im«lim>m dlemelar (0.01?) hall a. wHhln 0.00? of their lr» ••Mam maeurad In tha gating plana 0.0M eelew Ida leallng plana at Ih. devlaa ninth* a manlmum-dlamatar eeckega.
C.
All
M
maximum
absolute
dlmeniiam ara
ratings at
25°C
In Inchai.
free-air
temperature (unless otherwise noted)
.._ B Collector-Base Voltage .,
2N6447 -40 -25
Collector-Emitter Voltage (See Note 1) Emitter-Base Voltage
-5V* '.'..'.'' » -5V* 200 mA*
Continuous Collector Current
*-«/* 26
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2)
\-
.
° m "n V '° 1B0 C fr """ r ""*""*"• •« *• '«• ?«,n?,£J?t 1B0 C free-elr,"" temperature at tha rata of 2.SS mW/^C.
rating linearly to 3.
^T°
.
\j500mw*/
-65°C to 150°C* 260°C*
Lead Temperature 1/16 Inch from Case for 10 Seconds NOTES: 1. These valuat apply when tha basa-emltter dloda la open-circuited. '
mW S\ _»
\360mW*J ^
"*"
/"-65 S Cto150°C§\
Storage Temperature Range
\-55°C
to 135°C*J
"* C «-CBO
2N6462
2N6461
TEST CONDITIONS
20 V,
1
1
1
V
1.1
1.1
1
1
V
20 mA, 10
3.5
MHz
= 20 V,
1
E -o. See Note 5
3.5
10
3.5
10
3.5
10
i
MHz,
3
3
3
These parameters must be measured using pulse techniques, t^, = 300 jus, duty cycle < 236. C CD measurement employs a three-terminal capacitance bridge incorporating a guard circuit, The emitter
3
is
pF
connected to the
guard terminal of the bridge.
THERMAL INFORMATION FREE-AIR TEMPERATURE
CASE, TEMPERATURE DISSIPATION DERATING CURVE
DISSIPATION DERATING CURVE 1.2
1
I
1.0
J
1
i 5
a
0.8
0.6
0.4
4
2
25
50
75 100 125 150 Free-Air Temperature °C
—
FIGURE *JEDEC
175
200
1
25
50 T
c
75
100
125
150
— Case Temperature — °C
175
200
FIGURE 2
registered data
PRINTED IN
4-444
USA
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS. TEXAS 79222
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANV TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PIODUCT POSSIBLE.
TYPE 3N34 N-P-N
GROWN-JUNCTION SILICON TETRODE TRANSISTOR BULLETIN NO. DL-S E8960, AUGUST 19S8
22db Power Gain
Typical
Wgh
Ui at Wgb T««*watm
Design*! for
RF
30 MC
at
Wgh tn*muy
A«H»Bfierf •
Video
•
WrBers
IF
Mhn
*
OsdMotors
mechanical data case with glass-to-metal hermetic seal between case and leads. Unit weight
Welded
is 1
gram.
These units meet JEDEC outline TO-12 dimensions. O.MS (±0.0101 0.223 (±0.0101
0.350
DIA.
(± 0.0101
— —
-0.017 1+0.002, —0.0011 DIA. 4 LEADS
0.034 l± 0.005!
0.320 HA. I± 0.0101
0.031 (±0.0031
0.500 rt+0.060. —0.000) I
ALL CONNECTIONS INSULATED
maximum
ratings at
T,
=
All DIMENSIONS IN INCHES
FKOM CASE
25°C
mA mA mA mA
20
Emitter Current
20
Collector Current
5
Base No. 1 Current
5
Base No. 2 Current Collector Dissipation (Derate 1
mW/°C
Advanced Temperatures)
for
.
.
mW
125
.
junction temperature
-65°C
Maximum Range design characteristics at
Tj
=
25°C
mln
conditions
ICBO
Collector Cutoff Current
BVcbo BVebo BVceo
atl50°C Breakdown Voltage Breakdown Voltage Breakdown Voltage
l
Saturation Resistance Base-to-Base Resistance
hi.
Current Transfer Ratio
low fraquoncy
V CB - 20V Vcb - 20V I
Rbi— Rb2
Res
CH
liis
Toep
Coep fab
NF PG.
= 50mA
-50M A
1
lt-0 It-O 1,2-0 IB2-0 Ibz-o
-0
lg 2
IB2-0 IB2-0 E
V c - 20V
-
maawramonn
Alpha Cutoff Frequency
PRINTED IN U.S.A.
TO MAKE CHANCES AT ANT TIME TEXAS INSTRUMENTS RESERVES THE RIGHT SUPPLY THE BEST PRODUCT POSSIBLE. IN ORDER TO IMPROVE DESIGN AND TO
0.4
30
60
30
45 150
- 10mA
300
10K
l
E
- -1.3mA
I
82
--100mA
E
1.3mA
I
B2
--100mA
10
unit
mA *A V V V
-0
Ibi Ibi
l
f-IMc
Noise Figure Power Gain
+150°C
Ohm Ohm
25
1000 cps
V C - 20V
Current Transfer Ratio Series Input Resistance Parallel Output Resistance Parallel Output Capacitance
maa_ 40
Ie-0 l
dorian cantor 0.005
Ib-IOOjuA
mauwomonts
Output Capacity Header Capacity
high fraoonncy hi.
c c
Ic- 1mA c - 5mA
f
C b
to
(except as indicated)
1.5
Mflf
0.4
wf
-
V C -20V
1.0
20 l
(
- -1.3mA
4K
4 100
300
9K 1.5
I
b2
--100mA
100 15 22
f-30Mc
Instruments Texas INCORPORATED POST OFFICE BOX S012
•
DALLAS. TEXAS 75222
15K 3
Ohm Ohm Wlf
Mc 20
db db
TYPE 3N35
GROWN-JUNCTION SILICON TETRODE TRANSISTOR
N-P-N
—
^—
BULLETIN NO. OL-S 58961, AUGUST 1958
2Mb
Typical
Power Grin at 70
MC
CabrtMgir Dmkjmo
for
RF A^Cfiars
Wgh Frefwacy • Video
V Am&kn
•
AapMor*
• OfdSotert
mechanical data
Welded case
with glass-to-metal hermetic seal between case and These units meet JEDEC outline TO-12 dimensions. 0.245 (± 0.0101 0.223 E1 - >E2 ~
lE1-'E2-0,
T A (i)"100°C, TA(2 - -2B C
|
Al ,
10
200 MV
Offeat Voltage wtiwi voinge unai Change
i
^E1E2(oflUl B w thBM. Curr. nt t l
118 10
100°C,
See Note 6 |VE1E2(ofi)|
118 10
Offiet Voltage Change
I
^VE1E2(of.)lAT
Aw thT.mpef,turet
*
Ifi-lmA,
,
°
,,
)
.
Small-Signal ra1e2(on)
lB-'mA,
Emitter-Emitter
On-State Reilitence
'E1-IE2-0,
f-lkHz,
I,-100mA, See Figure 2
10
40
10
Small-Signal
Common-Emitter
VCE " 6
V,
lc "
1
mA,
f
- 20 MHz, 1.6
Forward Current
See Note 6
1.6
1.6
Transfer Ratio
Common-Bate Cobo
Open-Circuit
VC B
- 6 V,
'E1-'E2"0,
Veb
" 6 V,
ic-o,
f- 140 kHz
pF
Output Capacitance
Common-Bats Open -Circuit
Clbo
L NOTES:
6.
"'
V
pF
1
- ,!l
ur"
lm»r.t tamparaturat,
- 140 kHz,
Tim limlu apply separately for aach emitter with the other emitter open-circuited m emitter. ^lZ" 'T T'l6" T*"" "" ,h "" e4 turns #20 AWG, 3/16" die., approx. 1/2" long, tapped 1 turn L2: 314 turns #20 AWG, 3/8" die., approx. 1/2" long t Laadless disc ceramic capacitor ^Neutralization fixed for a transistor having a typical valua of C ris Equivalent parallel Input network: Y Q ' . 0.176 mmho-] (6.3 ± 2.6) mmho; input network loss - 0.8 dB; 3-dB bandwidth -
20 MHz
Equivalent parallel output network: Yi' - 0.6 mmho -j (1.9 ± 0.63) mmho; output network loss - 2 dB; 3-dB bandwidth 7.5
FIGURE •JEDEC F3
MHz
1
registered data
PRINTED IN U.S.A. Tl or
eonnel ossume any responsibility lor any circuit! shown represent that they ore free from potent infringement.
TEXAS INSTIUMENTS RESERVES THE RIGHT TO MAKE CHANCES AT ANY TIME SUPPLY THE REST PRODUCT P05SIRIE. IN ORDER TO IMPROVE DESIGN ANO TO
Instruments Texas INCORPORATED POST OFFICE BOX 9013
•
DALLAS, TEXAS 79222
4453
TYPE 3N1S3 N-CHANNEL DEPLETION-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTOR BULLETIN NO. DL-S 7311985, MARCH 1973
DEPLETION-TYPE MOS SILICON TRANSISTOR DESIGNED FOR CHOPPER AND SWITCHING APPLICATIONS •
Low rds(on)
•
Low Crss
•
Low IGSS
•
300
•
... 0.6 •
• •
a Max
pF Max
50 pA Max
'mechanical data
THE SUBSTRATE
m-
IN
IS
ELECTRICAL CONTACT WITH THE CASE
IM30
MAX" i
MA
CASE AND SUBSTRATE
i
DM
J-
I
f
—
T7
i
UNLESS OTHERWISE
e.100
f
ALL JEDEC TO-72 DIMENSIONS AND NOTES ARE APPLICABLE handling precautions Curve-tracer testing and static-charge buildup are
common causes of damage to insulated-gate devices. Permanent exceeded even for extremely short time periods. Each transistor is protected during shipment by a gate-shorting device, which should be removed only during testing and after permanent mounting of the transistor. Personnel and equipment, including soldering irons, should be grounded. damage may
•absolute
result
if
either gate-voltage rating
is
maximum ratings at 25° C free-air temperature
(unless otherwise noted)
Drain-Gate Voltage
20v 20v
Drain-Source Voltage
Forward Gate-Source Voltage Reverse Gate-Source Voltage Peak Drain Current (See Note
6V _o V 1)
Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) Storage Temperature Range Lead Temperature 1/32 Inch from Case for 10 Seconds
NOTES:
1
.
2.
This valua applies for t,,, < 20 mi, duty cycle < 1 0%. Derate linearly to 175°C free-air temperature at the rate of 2.67
JEDEC registered deta.
4-454
This data sheet contains
all
TexasINCORPORATED Instruments .
50 mA 400 mW
-65° C to
1
75° C
265°C
mW/°C.
applicable registered data in effect at the time of publication.
POST OFFICE BOX 5012
[
DALLAS. TEXAS 7BJJ2
USES CHIP MN82
TYPE 3N153 N-CHANNEL DEPLETION-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTOR
'electrical characteristics at
25° C free-air temperature (unless otherwise noted)
Gate-Terminal Forward Current
10
MO, C in <
'
U!,, r
'
2 pF.
to the «ourc.
PRINTED IN U.S.A.
4466
Texas INCORPORATED Instruments POST OPPICB BOX S012
DALLAS, TBXAS 7Saaa
.Hume any
Tl
connot
or
reprilent
thar
rtiponiibilily
they ore
fret
for
from
any
circuits
3J
shown
paUnl infrinaomont.
TEXAS INSTRUMENTS RESERVES THE RIGHT 10 MAKE CHANGES AT ANY TIME ORDER TO IMPROVE DESIGN AND TO SUfflY THE REST PRODUCT MKSUtE.
IN
.
TYPES 3N169, 3N170, 3N171
N-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTORS BULLETIN NO. DL-S 7311983, MARCH 1973
ENHANCEMENT-TYPEt MOS SILICON TRANSISTORS For Applications Requiring Very High Input Impedance, Such as Series and Shunt Choppers, Multiplexers, and Commutators
Channel Cut Off with Zero Gate Voltage Independent Substrate Connection Provides Flexibility
in Biasing
'mechanical data
THE SUBSTRATE
IS IN
ELECTRICAL CONTACT WITH THE CASE
£T?J"
u.
CASi
AND
SU1STRATE
ALL DIMENSIONS ARE IN INCHES UNLESS OTHERWISE SPECIFIED
f
HSM
ALL JEOEC TO-72 DIMENSIONS AND NOTES ARE APPLICABLE
handling precautions Curve-tracer testing and static-charge buildup are
common
cuases of
damage to
insulated-gate devices.
Permanent
exceeded even for extremely short time periods. Each transistor device which should be removed only during testing and after is protected during shipment by a gate-shorting equipment, including soldering irons, should be grounded. Personnel and of the transistor. permanent mounting
damage may
absolute
result
if
either gate-voltage rating
is
maximum ratings at 25°C free-air temperature
(unless otherwise noted)
±35V 25V
*Drain-Gate Voltage 'Drain-Source Voltage (See Note 1)
"^V
•Forward Gate-Source Voltage
-35 V
•Reverse Gate-Source Voltage
30 mA 300 mW 800 mW -65°C to 200^0 240 C
•Continuous Drain Current Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) •Continuous Device Dissipation at (or below) 25°C Case Temperature (See Note 3) •Storage Temperature Range
'Lead Temperature 1/16 Inch from Case for 60 Seconds
NOTES:
•JEDEC
element. 1 This voltage ratine appliei when the substrate is at the seme potential as the least-negative 2. Derete linearly to 200° C free-air temperature at the rate of 1 .71 mW/°C. 3. Derate linearly to 200° C case tempereture et the rate of 4.56 mW/°C. .
effect et time of publication. registered deta. This date sheet contains all applicable registered data in
dr,in current et tEnhancemant mode operation entail, the use of a forward gate-source voltage to increase drain current from DSS. *• drain current. An V GS »0. as opposed to depletion-mode operation wherein a reverse gate-source voltage Is used to decrease depletion mode. enhancement-type trenslstor is in the "off" state et V GS - and hence will not operate normally In the l
USES CHIP
Instruments TexasINCORPORATED POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
MN83 4467
H
TYPES 3N169, 3N170, 3N171
N-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTORS electrical characteristics at
25° C free-air temperature (unless otherwise noted)
PARAMETER V (BR)DSS *'GSSF
Forward Gate-Terminal Current
*'gssr
Reverse Gate-Terminal Current
*'dss
Zero-Gate-Voltage Drain Current
"
v GS
On-State Drain Current
*VDS(on)
Drain-Source On-State Voltage
*
Small-Signal Drain-Source
V DS
Forward Transfer Admittance
*^iss
*Cds
TA
- o,
= 125°C
100
V DS =
-10
v Gs l
10
- o.
D -10>iA
Vqs=
10 V,
id-o.
v DS
iov.
Iq = 2
T A - 125°C 3N169 3N170
0.5
3N171
1.5
1
mA,
f
=
1
kHz
f
-
1
kHz
2
V
3
mA
10 2
V
200
n mmho
1
V DS -10V, v G s
- o.
f
=
1
MHz
5
PF
Reverse Transfer Capacitance
v Ds -
o.
v Gs
- o.
f-
1
MHz
1.3
PF
Drain-Source Capacitance
V DS =
10 V.
vqs
- o.
-
1
MHz, 5
PF
Short-Circuit
f
See Note 5
NOTES:
PA nA MA
1.5
1
See Note 4
PA
Short-Circuit
Input Capacitance
Common-Source
*C rss
10
Vqs-0
= 10 V,
=
V
25
V DS =10V, V GS =10V, v G s = iov. Iq = 10 mA
Common-Source
Common-Source
Vds ,
MAX UNIT
MIN
V GS = V DS =
IOjiA,
Vqs - 35 V, V GS = 35 V. Vgs - -35 V V DS =10V, V DS -10V,
On-State Resistance Small-Signal
(Vfsl
Iq=
Gate Source Threshold Voltage
"'Dion)
r ds(on)
TEST CONDITIONS*
Drain-Source Breakdown Voltage
This parameter must be measured using pulse techniques. X^, = 300 Ms. duty cycle < 2%. 5. C ds measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The gate and the case are connected to the guard terminal of the bridge. 4.
'switching characteristics at 25°C free-air temperature
PARAMETER
T All
MAX
TEST CONDITIONS'*'
Turn-On Delay Time
•dlon)
V DD = 10 V, D on - 10 mA, v GS(on)-10V, V G S(off) = 0. l
Time
tr
Rise
*d(off)
Turn-Off Delay Time
tf
Fall
(
See Figure
Time
UNIT
3
ns
10
ns
3
ns
15
ns
)
1
measurements are made with the case and substrate connected to the source.
•JEDEC
registered data
PARAMETER MEASUREMENT INFORMATION 10
V INPUT
l d(on)
j«—
•
'dloff) tf
INPUT O-
r
I
tMo%
I
OUTPUT Jf-
TEST CIRCUIT a.
The input waveform tf
b.
<
0.33
ns, tyy **
Waveforms
are
0.4
is
90%
VOLTAGE WAVEFORMS
supplied by a generator with the following characteristics:
Z out - 50
li,
duty cycle
< 1%
'
tr
<
monitored on an oscilloscope with the following characteristics:
FIGURE
tr
<
0.4 ns, R| n = 50
SI,
Ci
<
r
2 pF.
1
PRINTED IN
4-468
33
/is.
Texas INCORPORATED Instruments POST OFFICE BOX 5012
DALLAS. TEXAS 75222
USA
Tl
connot assume any responsibility lor any circuits shown
or
represent
that
they
are
free
from
potenr
g?
infringement.
TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TIME IN ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIIIE.
TYPE 3N174
P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTOR
BULLETIN NO. DL-S 7011285. JANUARY 1970
ENHANCEMENT-TYPEt MOS SILICON TRANSISTOR For Applications Requiring Very High Input Impedance, Such as Series and Shunt Choppers, Multiplexers, and Commutators •
Channel Cut Off with Zero Gate Voltage
•
Square-Law Transfer Characteristic Reduces Distortion
•
Independent Substrate Connection Provides Flexibility
•
Similar to
in Biasing
2N4065
'mechanical data
THE SUBSTRATE 4
IS IN
ELECTRICAL CONTACT WITH THE CASE
^HH
alio
J WAX^
6.170
I
MA
1
1
'
.-
4-SOURCE
u.
0.2M 0.W o3Bt dill
MA
^ 3-CASE AND SUBSTH*TE
0.030
~r~
ALL DIMENSIONS ABE IN INCHES UNLESS OTHERWISE SPECIFIED
'
ALL JEDEC TO 72 DIMENSIONS AND NOTES ARE APPLICABLE handling precautions Curve-tracer testing and static-charge buildup are
common
causes of
damage to
insulated-gate devices.
Permanent
exceeded even for extremely short time periods. Each transistor is device which should be removed only during testing and after permanent protected during shipment by a gate-shorting mounting of the transistor. Personnel and equipment, including soldering irons, should be grounded.
damage may
absolute
result
maximum
if
either gate-voltage rating
ratings at
25°C
free-air
is
temperature (unless otherwise noted)
1)
~^L - ;~'
1)
-30 V
*Drain-Gate Voltage *Drain-Source Voltage (See Note Source-Drain Voltage (See Note
-
'Forward Gate-Source Voltage Gate-Substrate Voltage
a ~~ 7 m * ~~ 360 mW
"Continuous Drain Current
"Continuous Device Dissipation at (or below) 25°C Free-Air Temperature (See Note 2) •Storage Temperature Range * Lead Temperature 1/1 6 Inch from Case for 10 Seconds
NOTES:
1
.
2.
*JEDEC
g
" 65Ct°???o^
300 C
element. These voltage ratings applv when the substrate is at the seme potential as the least-negative Derate linearly to 1 75°C f rea-alr temperature at the rate of 2.4 mW/°C.
registered data
from DSS the drain current at Enhancement-mode operation entails the use of a forward gate-source voltage to Increese dreln current decrease drain current. An V GS -0, as opposed to depletion-mode operation wherein a reverse gate-source voltage is used to normally in the depletion mode. enhencement-tvpe transistor is in the "off" state at V G S " and hence will not operate l
t
j~
~~^
•Reverse Gate-Source Voltage
.
USES CHIP MP93
Instruments Texas INCORPORATED POST OfflCE BOX
SO 12
•
DALLAS. TEXAS 75222
4-469
TYPE 3N174
P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTOR 25° C free-air temperature (unless otherwise noted)
•electrical characteristics at
PARAMETER
TEST CONDITIONS''' V DS =
v G s - -so v. v G s - -so v,
Forward Gate-Terminal Current
'GSSF
v Ds
-
VO S
=
MAX
MIN
PA
-100
nA
2.5
-5
PA nA
-5
uA
-5
nA
-2
-6
V
-3
-12
mA
-1
V
o.
T A - 150°C
VGS = 30 V, V DS - -30 V, V D S - -30 V,
Reverse Gate-Terminal Current
'GSSR
Zero-Gate-Voltage Drain Current
'DSS
Vqs-O vgs
-
vgd
- o,
o.
T A - 1S0°C
V SD -=-30V,
Zero-Gate-Voltage Source Current
'SOS
See Note 3
v GS(th)
Gate Source Threshold Voltage
'Dion)
On-State Drain Current
v DS(on)
Drain-Source On-State Voltage
V DS V DS
= =
-15V, -15V,
I
D = -10jiA
Vqs = -15 V, See Note 4
V GS --15V, v GS --isv.
Small-Signal Drain-Source 'ds(on)
On-State Resistance Small-Signal
f
-
1
Iq
—
mA
1
'D = 0.
B
kHz
Common-Source
Forward Transfer Admittance
M
V D S--15V,
Common-Source
f
=
kHz,
1
Vq s = -15 V,
400
Mmho
See Note 5
200
Output Admittance
Common-Source Short-Circuit Cjss 1
^rss
Cds
kfi
1
|vfs|
Small-Signal
UNIT
-2.5
V D S - -15
nput Capacitance
f
=
1
Common-Source Short-Circuit
V DS
Reverse Transfer Capacitance
f
=
V,
f
=
=
- 15
MHz,
See Note 5
=
V GS
' 0,
vgs
o.
0.
MHz,
1
Mmho
V,
MHz
1
V DS = -15V,
Drain-Source Capacitance
Vqs
See Note 6
4
PF
0.7
pF
3
PF
'switching characteristics at 25° C free-air temperature
PARAMETER Rise
V DD
Time
Turn-Off Delay Time
VKoff,
Fall
NOTES:
TEST CONDITIONS*
Turn-On Delay Time
«d(on)
=
-10V,
v GS(on)--15V,
V G s(off)-0,
RG*50fi,
SeeFigurel
Time
MAX
UNIT
30
lD(on,--1mA,
50 15
100
3. For the measurement of SDS , the substrate must be connected to the drain. 4. This parameter must be measured using pulse techniques. t 100 ms, duty cycle l
6. 6.
» < 10%. p These parameters must be measured with bias conditions applied for less than 5 seconds to avoid overheating C ds measurement employs a three-terminal capacitance bridge incorporating a guard circuit. The gate and case are connected to the guard terminal of the bridge.
All
measurements except SDS are made with the case and substrate connected to the source. l
PARAMETER MEASUREMENT INFORMATION
:.i
~p 1 Mtl C- "i:z -o.
o.a
2
/
.
0.1 60
OW5,
MAX
DIA
0.305
0-0W O01Q
-.
MIN
1
^
45*e Notei7
= 18 = 200 MHz
Vqd
1
Circ uit
ir»
t-ig ure t
i
7
t
*
(D
,
-
3
to
I
\
^
o
N.
T
2
y
/
1 1
-2-101
2345678
V GG(GC)~ Gain-Control
40
Gate-Supply Voltage—
7:
Test conditions at 45
200
400
1000
f— Frequency— MHz
FIGURE 3
NOTE
100
FIGURE 4
MHz, 200 MHz, and 450 MHz
are the conditions given in the table of operating characteristics for
Texas INCORPORATED Instruments POST OFFICE BOX 5012
•
DALLAS, TEXAS 75222
3N211.
4491
TYPES 3N2H. 3N212. 3N213 N-CHANNEL DUAL-GATE DEPLETION-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTORS PARAMETER MEASUREMENT INFORMATION VDD O
vqg o
r— --M-— -m-470 pF
B CIRCUIT COMPONENT INFORMATION Leadless disc ceramic, 0.001 Leadless disc ceramic, 0.01
8T # 28, 9T # 28,
mF nF
5/32-inch-dia form, typo "J" slug
5/32-inch-dia form, type "J" slug
FIGURE 5-46-MHz POWER GAIN AND NOISE FIGURE TEST CIRCUIT FOR 3N211 AND 3N213*
VQG
VDD
Q
O
O/
r
r— #hn 470 pF \V /
470 pF
r'
2.2
J7t 560 I
FROM
50
SOURCE
0.001
i
V
)
\
T
kfi
***
mF
t^HH
^ *~~|El|G2/^|
n?'v
)G7XliA |_f_|
^-T
t
nH
toso-o LOAD
5*
CIRCUIT COMPONENT INFORMATION C1, C2,
&
C3:
Leadless disc ceramic, 0.001
ARCO 462, L2:
MF
S-80 pF, or equivalent
3T #18, 3/16 inch-dia aluminum 8T #20, 3/16-inch-dia aluminum
slug slug
FIGURE 6-200-MHz POWER GAIN, GAIN-CONTROL VOLTAGE, AND NOISE FIGURE TEST CIRCUIT FOR 3N211* •JEDEC
4492
registered data
Texas INCORPORATED Instruments POST OFFICE BOX S012
•
DALLAS, TEXAS 7522a
TYPES 3N211. 3N212. 3N213
N-CHANNEL DUAL-GATE DEPLETION-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTORS PARAMETER MEASUREMENT INFORMATION VQ2S
)fc._ C6'A\
FROM
50
II
SOURCE
&
.C6
62kn<
'*
TUT
|
'
MATCH
TUNE
I |
G1
— 625 mW —»
-65 C to 1 50 C •* 260 C
*•
when the base-emitter diode is open-circuited. 1 50°C free-air temperature at the rate of 5 mW/°C.
^Trademark of Texas Instruments JU.S. Patent No. 3,439,238
USES CH|P p24
Instruments Texas INCORPORATED POST Office BOX 5012
•
DALLAS. TEXAS 7B222
4-499
TYPES
TIS37. TIS38. TIS137, TIS138
P-N-P SILICON TRANSISTORS electrical characteristics at
25° C free-air temperature
PARAMETER
TEST CONDITIONS
v (BR)CBO v (BR|CEO v (BR)EBO
Collector-Base
'CBO
Collector Cutoff Current
VCE
Ivfe)
Common-Emitter
VCE
Transition Frequency
C cb
-9 V.
- -9 V C E - -9
Forward Transfer Admittance
»t
-
VC E
Common-Emitter
Forward Current Transfer Ratio Small-Signal
See Note 3
i
Forward Current
Small-Signal
l
l
Transfer Ratio
M
Collector-Base Capacitance
-1
V.
fC =
— mA,
V,
IC
-9
V,
V C E " -9 V C B " -9
V,
lc *
V.
l
-9
V,
Ig -
-
E =
V V V nA
25
45
f = 455 kHz mA. f- 10 MHz
35
45
30
40
dB
18
30
14
26
dB
— 1 mA. f- 455 kHz
32
— ' mA.
See Note 4
80
0,
f=1MHz,
1
1
IC =
UNIT
MIN TYP MAX MIN TYP MAX -35 -35 -32 -32 -4 -6 -100 -100
mA
lc -
TIS38
TIS138
35
0.5
mmho
35
32
320
50
1.1
1.7
0.5
30
70
200
MHz
1.1
1.7
pF
30
70
ps
See Note 5 Collector-Base
b 'Cc
r
I
Breakdown Voltage
Emitter-Base Breakdown Voltage
Static
"FE
C = -100mA, E -0 lB = 0, c = -1 mA, IE = -100mA, ic-o V CB = -10V, E -0
Breakdown Voltage
Collector-Emitter
TIS37
TIS137
-
1
mA,
f
= 79.8
MHz
C free-air temperature
operating characteristics at 25
D
VCB
Time Constant
TIS37
PARAMETER
TEST CONDITIONS
TIS137
UNIT
TYP
NF
Spot Noise F igure
VCE
"
V CE
=
-9 -9
c --1 mA, Rq -1 mA, Rfl =
V.
l
V,
lc =
7512,
f
=
1
kfi.
f
=
1
1
MHz MHz
dB
2.5
dB
1
TYPICAL CHARACTERISTICS AT Ta = 25°C TIS37.TIS137
TIS37, TIS137
STATIC
FORWARD CURRENT TRANSFER RATIO
STATIC
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR-EMITTER VOLTAGE
COLLECTOR CURRENT
120
120 1
Vce fe
=
II
-9V\ i
100
Z
i
6\
VCE
'i-l.
80
60
VCE °
40
=
-3\/-
''V'
|
'
1
VCE = - 1.5
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