T4

  

Order this document by BC556/D

SEMICONDUCTOR TECHNICAL DATA  

 

PNP Silicon

   

COLLECTOR 1 2 BASE 3 EMITTER

MAXIMUM RATINGS

1 2

Symbol

BC 556

BC 557

BC 558

Unit

Collector – Emitter Voltage

VCEO

–65

–45

–30

Vdc

Collector – Base Voltage

VCBO

–80

–50

–30

Vdc

Emitter – Base Voltage

VEBO

–5.0

Vdc

Collector Current — Continuous

IC

–100

mAdc

Total Device Dissipation @ TA = 25°C Derate above 25°C

PD

625 5.0

mW mW/°C

Total Device Dissipation @ TC = 25°C Derate above 25°C

PD

1.5 12

Watt mW/°C

TJ, Tstg

– 55 to +150

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

200

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

°C/W

Rating

Operating and Storage Junction Temperature Range

3

CASE 29–04, STYLE 17 TO–92 (TO–226AA)

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol

Characteristic

Min

Typ

Max

–65 –45 –30

— — —

— — —

–80 –50 –30

— — —

— — —

–5.0 –5.0 –5.0

— — —

— — —

— — — — — —

–2.0 –2.0 –2.0 — — —

–100 –100 –100 –4.0 –4.0 –4.0

Unit

OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0)

Collector – Base Breakdown Voltage (IC = –100 µAdc)

Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0)

Collector–Emitter Leakage Current (VCES = –40 V) (VCES = –20 V) (VCES = –20 V, TA = 125°C)

V(BR)CEO BC556 BC557 BC558

V

V(BR)CBO BC556 BC557 BC558

V

V(BR)EBO BC556 BC557 BC558

V

ICES BC556 BC557 BC558 BC556 BC557 BC558

Motorola Small–Signal Transistors, FETs and Diodes Device Data  Motorola, Inc. 1996

nA

µA

1

     

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic

Symbol

Min

Typ

Max

— — — 120 120 120 120 180 420 — — —

90 150 270 — — — 170 290 500 120 180 300

— — — 500 800 800 220 460 800 — — —

— — —

–0.075 –0.3 –0.25

–0.3 –0.6 –0.65

— —

–0.7 –1.0

— —

–0.55 —

–0.62 –0.7

–0.7 –0.82

— — —

280 320 360

— — —

—

3.0

6.0

— — —

2.0 2.0 2.0

10 10 10

125 125 125 240 450

— — 220 330 600

500 900 260 500 900

Unit

ON CHARACTERISTICS DC Current Gain (IC = –10 µAdc, VCE = –5.0 V)

(IC = –2.0 mAdc, VCE = –5.0 V)

(IC = –100 mAdc, VCE = –5.0 V)

hFE BC557A BC556B/557B/558B BC557C BC556 BC557 BC558 BC557A BC556B/557B/558B BC557C BC557A BC556B/557B/558B BC557C

Collector – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –10 mAdc, IB = see Note 1) (IC = –100 mAdc, IB = –5.0 mAdc)

VCE(sat)

Base – Emitter Saturation Voltage (IC = –10 mAdc, IB = –0.5 mAdc) (IC = –100 mAdc, IB = –5.0 mAdc)

VBE(sat)

Base–Emitter On Voltage (IC = –2.0 mAdc, VCE = –5.0 Vdc) (IC = –10 mAdc, VCE = –5.0 Vdc)

VBE(on)

—

V

V

V

SMALL–SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –10 mA, VCE = –5.0 V, f = 100 MHz)

fT BC556 BC557 BC558

Output Capacitance (VCB = –10 V, IC = 0, f = 1.0 MHz) Noise Figure (IC = –0.2 mAdc, VCE = –5.0 V, RS = 2.0 kW, f = 1.0 kHz, ∆f = 200 Hz) Small–Signal Current Gain (IC = –2.0 mAdc, VCE = –5.0 V, f = 1.0 kHz)

Cob

MHz

NF BC556 BC557 BC558

dB

hfe BC556 BC557/558 BC557A BC556B/557B/558B BC557C

pF

—

Note 1: IC = –10 mAdc on the constant base current characteristics, which yields the point IC = –11 mAdc, VCE = –1.0 V.

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

     

BC557/BC558

–1.0

1.5

TA = 25°C

–0.9

VCE = –10 V TA = 25°C

VBE(sat) @ IC/IB = 10

–0.8 V, VOLTAGE (VOLTS)

hFE , NORMALIZED DC CURRENT GAIN

2.0

1.0 0.7 0.5

–0.7 VBE(on) @ VCE = –10 V

–0.6 –0.5 –0.4 –0.3 –0.2

0.3

VCE(sat) @ IC/IB = 10

–0.1 0.2 –0.2

–0.5 –1.0 –2.0 –5.0 –10 –20 –50 IC, COLLECTOR CURRENT (mAdc)

0 –0.1 –0.2

–100 –200

Figure 1. Normalized DC Current Gain

–1.2 IC = –10 mA

IC = –50 mA

IC = –200 mA IC = –100 mA

IC = –20 mA

–0.4

–0.02

θVB , TEMPERATURE COEFFICIENT (mV/ °C)

VCE , COLLECTOR–EMITTER VOLTAGE (V)

TA = 25°C

–55°C to +125°C 1.2 1.6 2.0 2.4 2.8

–10 –20

–0.1 –1.0 IB, BASE CURRENT (mA)

–0.2

10 Cib

7.0

TA = 25°C 5.0 Cob

3.0 2.0

1.0 –0.4 –0.6

–1.0

–2.0

–4.0 –6.0

–10

–20 –30 –40

–10 –1.0 IC, COLLECTOR CURRENT (mA)

–100

Figure 4. Base–Emitter Temperature Coefficient f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)

Figure 3. Collector Saturation Region

C, CAPACITANCE (pF)

–100

1.0

–1.6

0

–50

Figure 2. “Saturation” and “On” Voltages

–2.0

–0.8

–0.5 –1.0 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mAdc)

400 300 200 150

VCE = –10 V TA = 25°C

100 80 60 40 30 20 –0.5

–1.0

–2.0 –3.0

–5.0

–10

–20

–30

–50

VR, REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mAdc)

Figure 5. Capacitances

Figure 6. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

3

     

BC556

TJ = 25°C

VCE = –5.0 V TA = 25°C

–0.8 V, VOLTAGE (VOLTS)

hFE , DC CURRENT GAIN (NORMALIZED)

–1.0

2.0 1.0 0.5

VBE(sat) @ IC/IB = 10 –0.6 VBE @ VCE = –5.0 V –0.4

–0.2 0.2

VCE(sat) @ IC/IB = 10 0 –0.2

–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (AMP)

–0.1 –0.2

–0.5

–50 –100 –200 –5.0 –10 –20 –1.0 –2.0 IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

–2.0

–1.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C)

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 7. DC Current Gain

–1.6

–1.2

IC = –10 mA

–20 mA

–50 mA

–100 mA –200 mA

–0.8

–0.4 TJ = 25°C 0 –0.02

–0.05 –0.1 –0.2 –0.5 –1.0 –2.0 IB, BASE CURRENT (mA)

–5.0

–10

–20

–1.4

–1.8

–2.6

–3.0 –0.2

f T, CURRENT–GAIN – BANDWIDTH PRODUCT

C, CAPACITANCE (pF)

TJ = 25°C Cib

10 8.0 Cob

4.0 2.0 –0.1 –0.2

–0.5 –1.0 –2.0 –5.0 –10 –20 VR, REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

4

–0.5 –1.0

–50 –2.0 –5.0 –10 –20 IC, COLLECTOR CURRENT (mA)

–100 –200

Figure 10. Base–Emitter Temperature Coefficient

40

6.0

–55°C to 125°C

–2.2

Figure 9. Collector Saturation Region

20

θVB for VBE

–50 –100

500

VCE = –5.0 V

200 100 50

20

–100 –1.0 –10 IC, COLLECTOR CURRENT (mA)

Figure 12. Current–Gain – Bandwidth Product

Motorola Small–Signal Transistors, FETs and Diodes Device Data

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

     

1.0 0.7 0.5

D = 0.5 0.2

0.3 0.2 0.1

0.05

SINGLE PULSE

0.1 0.07 0.05

SINGLE PULSE

t1 t2 DUTY CYCLE, D = t1/t2

0.03 0.02 0.01 0.1

ZθJC(t) = (t) RθJC RθJC = 83.3°C/W MAX ZθJA(t) = r(t) RθJA RθJA = 200°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) – TC = P(pk) RθJC(t)

P(pk)

0.2

0.5

1.0

2.0

10

5.0

20 50 t, TIME (ms)

100

200

500

1.0 k

2.0 k

5.0 k

10 k

Figure 13. Thermal Response

–200 IC, COLLECTOR CURRENT (mA)

1s

3 ms

–100 TA = 25°C

–50

TJ = 25°C

BC558 BC557 BC556

–10 –5.0

–2.0 –1.0

BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT

The safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

–5.0 –10 –30 –45 –65 –100 VCE, COLLECTOR–EMITTER VOLTAGE (V)

Figure 14. Active Region — Safe Operating Area

Motorola Small–Signal Transistors, FETs and Diodes Device Data

5

     

PACKAGE DIMENSIONS

A

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

B

R P L

F

SEATING PLANE

K D J

X X G H V

C

1

SECTION X–X

N N

CASE 029–04 (TO–226AA) ISSUE AD

DIM A B C D F G H J K L N P R V

INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 –––

MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 –––

STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com

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6

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Motorola Small–Signal Transistors, FETs and Diodes Device Data



BC556/D

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.