Download Sentaurus TCAD Training for CMOS Application (Synopsys_2009) _ OCR...
4/2/2009
Sentaurus TCAD Training for CMOS Application
synopsys~ Predictable Success
Section 1. Course Outline • Sentaurus TeAD Overview • Sentaurus Workbench • Sentaurus Process 10 & 20 • Tecplot SV • Sentaurus Structure Editor - Building Meshes • Sentaurus Device I-V simulation • Inspect
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Section 2. Course Outline • 20/30 Sentaurus Structure Editor • Ligament introduction • C-V Device Simulation • Breakdown Device Simulation • 90nm nMOSFET Exercise • pMOSFET Device Exercise • SolvNet Resources • SolvNet Introduction • 2D Strained Silicon 45nm CMOS Reference Flow Demo • 3D nMOSFET Demo
synopsys' Predictable Success
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reAD: What's it used for?
• TCAD is used to develop and semiconductor technologies • Designers focus on the chip • TCAD users focus on the transistor!
synopsys' Predictable Success
Putting Simulation to Work
You can learn to fly a jet by actually flying one at great expense and risk
Or you can use a flight simulator at a fraction of the price and a lot less risk I!!
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Simulating Semiconductor Manufacturing
• With TeAD, engineers simulate the process fabrication flow and resulting electrical behavior
Process
De,,«
Gate oxide 3nm Poly gate deposition Gate formation 100 nm gate length Halo implant BF 2 , 40 keY, 8e12, 35 deg, quad SID extension As, 5 keY, 5e14, 0 deg SID extension anneal 1050 degC, 3 s
Vth, lon, loft....... .
00: substrate
synopsys' Predictable Success
TCAD Application Areas Opto
'LED, LASER 'Image sensor ·Photodetector ·Solar cell
RF 'High-speed device ·Compound semiconductor Emitter
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and many types of customers 10M
~.1'CA[);'R~6:;Te~h:Oev"
Research/University
'c,',
.~;
,./,fl~~{:t~~ri~~,'c 1019 cm-3 Blue: < 1018 cm- 3
Run-time statistics: 13000 nodes Single-carrier quantum transport 95 CPU minutes < 1 GB RAM
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synopsys' Predictable Success
Framework - SWB • Provides a GUI-based simulation environment • Organizes simulation projects, runs and results • Allows large Design of Experiment (DOE) and statistical analysis • Manages job scheduling & network computing • Enables interactive visualization and analysis of simulation results
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reAD Product Architecture Sentaurus Device
Sentaurus Device Editor
Sentarus Workbench
E
~ 0.0004
~ 5
~ 00002
~ Drain Voltage {Vi
/
Mesh
/
.......... PCM Studio
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synopsys' Predictable Success
Process Simulation
I
• Models wafer fabrication steps
•
•
Implantation, diffusion, oxidation & lithography models are calibrated and highly predictive
•
Etching and deposition are typically modeled geometrically
TCAD process flow editor
Starts from flow description and layout
oo.sut6-trille
90nm nFET
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IStructure Editor 3D Emulation •
From layout and geometrical photo, etch, & deposition to generate 3D structure.
20 and 3D iterative editor •
Intuitive user interface
•
Interactive scripting record GUI actions type/paste script command easy to debug
synopsys' Predictable Success
Device Simulation •
Models the electrical, optical, mechanical & magnetic behavior of r'~ semiconductor devices • Simulation is typically performed on structures created by process simulation • Modes of simulation
Simulated current density and flow lines in 100nm device
• Static, time-dependent, large and small signal frequency dependent and noise modeling
Highly accurate CAD models can be extracted from device simulation results "./
Simulated electrical characteristics
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PCM Studio PCM acts as a link between the Yield Management System (YMS) and TCAD
.... i
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PCM from TCAD In-process Metrology and Device Characteristics from Manufacturing
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• Graphical & Statistical analysis
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• Visualization of experimental data • Visualization of process-device relations • Algorithmic analysis • •
Reverse analysis Feed-forward analysis Process Window analysis
.-------
synopsys' Predictable Success
rCAD Consulting and Engineering ~ 1E21
•
~ :-....
•
'Ohlf:/,Loo,r
•
I$"Y:FU.>OP'
• Dedicated team of highly proficient engineers with 1~ lE20 :,,:!.. ~ .:;''/.':.~ .. ~ _$'-,,",5.1041 long professional experience • Clo~e collaboration with the Synopsys software g lE19' ~~..... • •. . engmeers il lE18 • • '_ ••• ~ Close collaboration with customers in consulting and ~ lE17l....",~!!fJl~i1j~ engineering projects 0 10 O:;lh(n:, 40 • Service project examples
i
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• Calibration • Process analysis and optimization • Difficult simulation types, such as 3D, full-chip, SEU/SER, ESD Customer specific technology templates • Customer specific training and know-how transfer • Model development and integration • Software integration: TCAD FabLink • Dedicated engineering projects
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Synopsys reAD
synopsys" Predictable Success
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WMj,a;h'
n
(a GUI tool to assemble process flow and layout data, then translate to the input file of SProcess)
UWMi**j==========+------.
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~im[$l!llmij$j Emittitl
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synopsys" Predictable Success
Sentaurus Workbench
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Node Information
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Slmul41ion coordiOuto system {slk:9.angle '" 45)
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Script File Setup Sequence • Setup initial mesh • Define initial simulation domain • Initialize simulation & define substrate condition • Setup process flow • Oxidation / Deposition / Etching / Implantation / Annealing • Rebuild mesh at appropriate steps
• Define electrodes • Save full structure • Extract parameters
synopsys' Predictable Success
1D Example • Copy project "1 D_SProcess" from training_library • Refer to the command file of example "1 D_ SProcess" • Check 1D doping profile by INSPECT • Output file introduction
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Reference: SProcess, p34 - Oxide Thickness • Meauring oxide thickness: Integral Boron Concentration
Select z=Boron layers
{ Top
Bottom
Integral
Material}
{-6.43e-03 4.11 e-03
1.54e+09
Oxide}
{ 4.11 e-03
1.98e+11
Silicon}
2.00e+OO
• final oxide thickness is 4.11 nm + 6.43 nm = 10.54 nm
,
I
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I
I
Predictable Success
Reference: SProcess, p734 I p672 I p741 I p775 I p98 - select I layers I SetPlxList I WritePlx I Datasets • Select • Selects the plot variable for the postprocessing routines
• Layers • Prints material interfaces and integrated data field values
• SetPlxList • Sets a list of solution and term names to be passed to WritePlx command
• WritePlx • Writes a 10 pix file.
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2D Example • Copy project "20_SProcess" from training_library • Refer to the command file of "20 SProcess"
synopsys' Predictable Success
2D Example Process Flow
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2D Example Mesh Setting
Extract Parameters I
I
I
Ygox (X coordinate of oxide/silicon interface) Ypol (X coordinate of POLY/oxide interface) Tox (gate oxide thickness) = Ygox-Ypol Lgeff (effective channel length) = 2*Xgd Xj (Source/Drain junction depth) Ocp,["t"}COil:.e!lll clean up > add parameters> modify command file> clear up & renumber the experiment tree
Link external variables to internal variables #--- set variable --------------------setlgate 0.18 set ymax [expr $/gateI2+0.4] set HaloDose 1e13 set HaloEnergy 15
#--- set variable --------------------set Igate @Igate@ set ymax @@ set HaloDose @HaloDose@ set HaloEnergy @HaloEnergy@
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2D Example • Copy project "20_SProcess" from training_library • Refer to the command file of "20 SProcess" • Run & check extracted variables • User exercise: Add the SWB variables & change code accordingly
synopsys' Predictable Success
Reference: SProcess, p453 ; SWB, p160 I p95 • Advanced Calibration • calibrated to deep-submicron CMOS & SOl technology • power devices or SiGe devices, may require simpler or additional diffusion models, which are not yet included in the Advanced Calibration
• # - command • #set : Sets the value of
• Extracted variables • puts "DOE: "
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synopsys' Predictable Success
Tecplot SV Overview
• Tecplot SV is software for scientific visualization. • Extended by Synopsys to accommodate the special requirements.
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Specify Equations • Use the Specify Equations dialog to alter data in existing zones_ Data> Alter> Specify Equations __ . • The dialog allows you to change the values of entire variables or specific data points_ • You can also use the dialog to create new variables_
synopsys' Predictable Success
Generating 1D Cuts • One-dimensional cuts can be made along either the x or y coordinate axes. Slicer >Orthogonal Cut Normal Direction:
.... X
vV
",Z .J Cut at mouse position
Number of Cuts:: First Cut At
Last Cut At
• Merga Zones in Cut ...., Cut Zone By Zone ~~:
x {umJ
-
Batch Mode • Refer to command file "sde_dvs.cmd" of example 0.18um nMOS • Check output files
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Interactive Mode • • • • • •
Start Structure Editor => type "sde" Journal on => record the command line of each step Import boundary file from n4_bnd.tdr Load sub mesh (geometry and doping data) from n4_fps.tdr turn off "auto region name", turn on "exact coordinates" Step by step setup mesh by GUI Silicon Poly SO' LOO • CtoC Gox Channel • Gate
=> => => => => => => =>
(0.1, 0.1) / (0.05, 0.1) (0.02, 0.05) / (0.01, 0.025) (0.09, 0.0) / (0.49, 0.3) => (0.1, 0.03) / (0.006, 0.006) (0.05, 0.0) / (0.09, 0.05) => (0.006, 0.006) / (0.005, 0.005) (0.09, -0.002) / (0.49, 0.006) => (99, 0.002) / (66, 0.001) (0.0, -0.002681) / (0.09, 0.00065) => (99, 4e-4) / (66, 4e-4) (0.0, 0.00065) / (0.09, 0.075) => (0.02, 0.05) / (0.01, 2e-4) / (-1.45, 1.45) (0.0, -0.18) / (0.09, -0.002681) => (99, 0.04) / (66, 4e-4) / (0.0, -1.75)
• Define PolyGate doping type and concentration (Arsenic 6e19) • • • •
Save Build mesh Journal off Check .tdr .jrl
synopsys' Predictable Success
Reference: MeshGen, p72; SDataEx, p11-15 • snmesh project_name • SMesh automatically adds .bnd and .cmd to the base name project_name to obtain input file filenames. SMesh creates the output file project_name_msh.tdr that contains mesh geometry information and doping information. • In the case of TOR files as input file, special naming rules apply. • tdx -mtt -x -ren drain=source n@node@_haICmsh n@node@_msh
• -mtt: Mirrors TOR geometry and saves the result to another TOR file • -x: Mirror at xmin • -ren: Rename a region or regions
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The Final Mesh for SDevice DQfilngCl)ncer.ltallOl1lC:!TI~·31
•
34E.20
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3 OE ... 17 2.7E+14
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.-1.2Ed5 -14E't-18
0.2
E 2-
>-
004
0.6
0.8
o
0.5
x [urn]
synopsys' Predictable Success
User Exercise • Import command file & go through batch mode • Do the refinement manually as stated in the interactive mode. • Build the mesh & check result
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The Final Mesh for SDevice DopmgConcenlra!lcm !cm-'-31 34E.20
III
',,.-. ;"JOE+- 17
",: 2.7E+ t4
0
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• • 1.2E.1S -14E... 18
0.2
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0.4
0.6
0.8
o
0.5
X [um)
synopsys' Predictable Success
User Exercise • Import command file & go through batch mode • Do the refinement manually as stated in the interactive mode. • Build the mesh & check result
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synopsys' Predictable Success
Outline • Flow of input and output in SDevice • Command file introduction • Parameter file introduction • O.18um nMOS Id_Vg example
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Flow of Input and Output in SDevice Input Models, Parameter, SWeeps
Input
Output:
Device Structure
IVs. Field distributions
Output: Runtime messages
synopsys' Predictable Success
Command File File "define the input and output files of the simulation"
}
Electrode { "define electrical (or thermal) contacts, initial bias condition, special boundary condition" Physics
{
Plot
{
"declare physical models" "specify the solution variables that are to be saved in the Plot file" Math
{
Solve
{
} }
}
"options of numeric solver" " set bias sweeps sequence and solve transport models"
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Parameter File • Refer to SDevice manual 2007.12 P .56 • Check default parameter file by materials • When parameter file is empty, use default parameters
Reference: SDevice, p56 • The parameter file contains user-defined values for model parameters (coefficients). • The parameters in this file replace the values contained in a default parameter file models. par. • Model coefficients can be specified separately for each region or material in the device structure
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• Refer to 0.18um_nMOS example Vg=O-1.5v
80-006 , - - - - - - - - - - , - 8 & - 0 0 5
6&-006
E
2-
>-
/
0.2
.02
o
x [urn]
02
20-006
0.6 Vg{vonj
Vb=Ov
synopsys· Predictable Success
User Exercise • Use 2D_Sprocess example, do: • Add Structure Editor, add "PolyDop" parameter, import command file • Add Sdevice, add "Vdd", "Vds", import command file, and specify import parameter • Run (Result checking will be demo'ed in the next section)
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synopsys' Predictable Success
Outline • GUI interactive mode • Load curve file, plot curves • Edit Plot area, Axes • Create new curve • Formula library - refer to manual 2007.12 P .25,48 • Macros - refer to manual 2007.12 P.26,50 • Save, Export
• Script file batch mode • Record each operation step on interactive mode to generate a script file. • Script a command file - refer to example 0.18um nMOS • Extract standard parameters of the extraction library
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Reference (Inspect, p48 I p50) Function Table:
Relum:. II"" tn~~ .... b~~t>o'lk..-..:.sul~ 0Jr..... Vallk':-- mtl'J ~ ~.,..~k)J"Ul.1.tl('ro;:qu:al11)1.
Retulm tho! Ill>:" 1~. ~ retumL-J an~ {odi:ml ~ ~" .....-n in tl:v!-
r.m.,..:--lt... :
If.\:'t.
Z
Rottum,;. tn.!::lI.'I:' t:.ll~,~t. Ttl ... rewm..."Il.:1llgk·Ir.:Jd1a:tl is 21 ...... 0 In tho:-'.I1lt ecor > op-~~~ A:~~_ _ _' start. _ _ [ 'q.
~
Add Pau,e
j
1 ...J
--:-;--.,- _ _ _ Add Breat
stop
~
synopsys' Predictable Success
Inspect Execution Mode • Inspect has two execution modes: interactive and batch mode. You can change mode bY:':-:'S'J,~tExe~:':n':::: ."~ Right button>Edit Input>Preferences ...
'"n' ....... ,~~
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Mathematical Formulas and
synopsys~ Predictable Success
Mathematical Formulas (1/2) • Click the New button below the Curves area in the Inspect main window . • The Create Curve dialog box is displayed. The right pane lists available Cur/e1
jWiY-,_,---
t~3me;
ro.e~~J!1I~",~~I!!..::·-; 5 ..::' F"O/lft'.cr""V\.'"l~iP{"'ToWCton:~~in"):>
j
MO!:p Cllf'.l1I 'To .. t.sfl Y...to'4 v
F1fgr.t V-A>d:
e.n.
coe, ctt'n.
Select batch mode Edit Input>Preferences ...
• Using inspect script: >Select interactive mode Edit Input>Preferences ... >Run.
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synopsys' Predictable Success
Sentaurus Structure Editor ~~~~~~
Generating 20 Boundaries With Online Training Material
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20 Exercise
synopsys' Predictable Success
Steps • Draw> Exact Coordinates • Draw> Overlap Behavior> New Replaces Old
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Regions
Region
Material
Coordinates
Substrate Silicon
(-0.5,0), (0.5, 1.0)
Gate oxide
Si02
(-0.2 -40e-4), (0.2 0.0)
Nitride spacer
Si3N4
(-0.2 -0.2), (0.2 -40e-4)
Poly gate
PolySi
(-0.1-0.2), (0.1-40e-4)
Buried oxide
Si02
(-0.5 0.1), (0.5 0.2)
Edit> Separate Lumps.
synopsys' Predictable Success
Rounding Edges
.... Ix
llJrtU- Edit 2D > Fillet >'. )
',\/Woe;
...:....;.....~
r:':;-';--'.;..:....-'-':.....;-:...;......;. •• >-'--, : .
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Declare Contacts
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S·
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0-
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• (sdegeo:define-contact-set "source" 4.0 (color:rgb 1.0 0.0 0.0 ) "##") • (sdegeo:define-contact-set "drain" 4.0 (color:rgb 0.0 1.00.0) "##") • (sdegeo:define-contact-set "gate" 4.0 (color:rgb 0.00.0 1.0) "##") • (sdegeo:define-contact-set "substrate" 4.0 (color:rgb 1.0 1.00.0) "##") • (sdegeo:define-contact-set "bodytie" 4.0 (color:rgb 1.0 0.0 1.0 ) "##")
synopsys' Predictable Success
Set Contact (1) • Contacts> Set Edge(s)
• (sdegeo:define-2d-contact (find-edge-id (position -OA 0.0 0.0)) "source") • (sdegeo:define-2d-contact (find-edge-id (position OA 0.0 0.0)) "drain") • (sdegeo:define-2d-contact (find-edge-id (position 0.0 1.0 0.0)) "substrate")
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Add Vertices
• (sdegeo:insert-vertex (position -0.10 0.1 0.0)) • (sdegeo:insert-vertex (position -0.05 0.1 0.0)) • (sdegeo:define-2d-contact (find-edge-id (position 0.07 0.1 0.0)) nbodytien)
synopsys' Predictable Success
Define Region as Contact • Select Body • Contacts> Set Region Boundary Edges • Edit> Remove> Region
• (sdegeo:set-current-contact-set "gate") • (sdegeo:set-contact-boundary-edges (find-body-id (position 0.0 0.1 0.0))) • (sdegeo:delete-region (find-body-id (position 0.0 -0.1 0.0)))
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Renaming Regions • Select Body • Edit> Change Region Name • (sde:add-material (find-body-id (position 0.0 0.8 0.0» "Silicon" "RSubstrate") • (sde:add-material (find-body-id (position 0.0 0.15 0.0» "Si02" "RBox") • (sde:add-material (find-body-id (position 0.0 0.05 0.0» "Silicon" "RSiliconepi") • (sde:add-material (find-body-id (position 0.0 -20e-4 0.0» "Si02" "RGateox") • (sde:add-material (find-body-id (position -0.15 -0.1 0.0» "Si3N4" "RSpacerleft") • (sde:add-material (find-body-id (position 0.15 -0.1 0.0» "Si3N4" "RSpacerright")
• (sde:showattribs "all")
synopsys' Predictable Success
Saving the Model • File> Save Model • (sde:save-model "soifet_bnd n ) • model geometry - native ACIS format file soifet.sat • Ref/Eval windows and parameters - soifet.scm • DF-ISE format refinement and doping - soifet.cmd • DF-ISE format boundary - soifet.bnd
• To use the TOR format for the boundary file: • (sdeio:save-tdr-bnd (get-body-list) "soifet_bnd.tdr")
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Defining Constant Doping Levels in Materials • (sdedr:define-constantprofile "ConsLSilicon" "BoronActiveConcentration " 1e+15) • (sdedr:define-constantprofile-material "PlaceCD .Silicon" "ConsLSilicon" "Silicon")
·"remJ!.m·W:\;W!Ijl!)m.:::::r:::::mrr~~.,-~ i
;
~'Pi~cD-5if;;;
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CortrtantProfiltDe1inition------------,
~I
tComt.Sir~·
Name
I
Bor0n.Activ6Concentration
Specb
~J
i
j
j!
~----~lo==~~-----D~~ 0
Decay factor
I
Ch",.. _ _ _
II
Replace
On
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~
;
------_=-..1
L..-_______
synopsys' Predictable Success
Defining Constant Doping Levels in Regions • (sdedr:define-constantprofile "ConsLEpi" "BoronActiveConcentration" 1e17) • (sdedr:define-constantprofile-region "PlaceCD.Epi" "ConsLEpi" "R.Siliconepi")
rPlaalmentType---------,
o
flef/'Mn
@Atglen
I
I A.SI\Ic:onepl
~l
,CorohlntProllleDefnition------------,
NMn,
·_····--'~I
1tlrla:Ollrn.1
;1
• (sdedr:define-multibox-size "RefDefMB.Channel" 0.1 0.1 0.01 0.050.050.001 1 1 -1.5 ) • (sdedr:define-multiboxplacement "PlaceMB.Channel" "RefDefMB. Channel" "RefWin. Channel" )
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Build Mesh
The corresponding Scheme command is: • (sde:build-mesh "mesh" "-P" "3dmos") In the TOR format, the Scheme command for the meshing operation is: • (sde:build-mesh "mesh" "-P -F tdr" "soifet_msh") Note: use SNMESH (doping profile [tdr] can be viewed with option in postprocess)
synopsys' Predictable Success
synopsys' Predictable Success
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Sprocess simulation by Ligament • Sprocess > properties: select "Use Ligament" option on the dialog box • Edit Input> Ligament flow: set up a process flow • Ligament Workspace: refer to on-line training material "Ligament 0.7 Ligament Workspace" • On-line training material provide a detail introduction in chapter "Ligament"
synopsys' Predictable-Success
Ligament • Use Ligament to Build up the Device Structure
........... bO~On
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Environment & Substrate Names
Name
S'-:;::::i'Flow"-
i-:R~
t--~ substrate 9--!i£" well
~"")trtle'
title dop~
: boron
concen
f-{-) grid i-(-) debug
H-) chec.~'.d
43-:!~ Gox e-!~ Po!yGate
e-!Ei"
LOO
e.-:.!~ S.pacer l3-!~ SO e-=!~ Metal r!1t- struc 9-!~
: Boolean . Soolean
true false
:-~:~~:r .~~: string
}-(-)
Boolean :"Dlstarlce
: Sjde
; GrId
d~pant
boron
concen
r3Jse 5
"um Ad:-'3!.lCed~al!br:·
Y-:-) tsupre~_min_hOrI.z~ Dj~tance_.
0.1
Name
"e
"0011 'n@oode@ \@node@ front
'O.S 0.1
0.5
Concentration
i..-.{-) resistivity 1-{-) orientation
Y-ltype
boron
1e15
Resistivity
o
Number
100
Type
:um
Value
Type
"O'opa"t
'~:'j"dopa~t''-(-) concentration
# 2D nMOSFET save
false false sprocess
8--(-) gnd_refinement _ :'~ridff~! ~-:-(-) ~~pr~~..~~I~,..velf:. Q~aJ}~~_ tsuprem4_delta_ho~ Distance r--(-) tsuprem4_mln_vertl~ Distance
r--
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SolvNet Register -----------'3 cJ
Isynopsys
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