Rf manual

RF Manual 15th edition Application and design manual for High Performance RF products May 2011

High Performance RF for the most demanding applications

NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for today’s RF designers. It features our complete range of RF products, from low- to high-power signal conditioning and high-speed data converters.

High Performance RF for the most demanding applications When it comes to the most demanding RF applications, the first thing on the designer's mind is to meet the specified performance. So that is exactly what NXP enables you to do, with the added benefits of silicon-based, volume manufacturing process technologies. That means you can design your systems to the highest specifications, while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. Shipping more than four billion RF products annually, NXP is a clear industry leader in High Performance RF. From satellite receivers, cellular base stations, and broadcast transmitters to ISM (Industrial, Scientific, and Medical) and aerospace and defense applications, you will find the High Performance RF products you need at NXP. And constant innovation ensures you always have the most effective solutions at your fingertips – whether it's innovative Doherty power amplifier architectures, JESD204A CGV TM serialized data interfaces, or tiny GPS LNAs. So if you're looking to improve your RF performance, design a highly efficient signal chain, or break new ground with an innovative ISM application, then NXP's creative thinking and expert support can help you every step of the way. High Performance RF design challenge The day-to-day work offers many challenges to the RF designer, from the high diversity of signals to integration, or simply the time spent. We recently started a design challenge (www.hprf-design-challenge.nxp.com). It offers a forum for RF enthusiasts to walk with us through the steps of a design, from concept to prototype. This is, in essence, the goal of the RF Manual – to make design work easier. What’s new? This RF Manual provides updated information on RF applications clustered in different segments. The segments are as follows: wireless and broadband communication infrastructure, TV and satellite, portable devices, automotive, ISM, and aerospace and defense. We describe in detail the new developments in our core technologies, QUBiC4 and LDMOS. We have also added GaN technology to our product offering; this key technology lets high-power amplifiers deliver very high efficiency in next generation wireless communication systems.

4

NXP Semiconductors RF Manual 15th edition

New products include GaN power amplifiers, a complete line of overmolded plastic (OMP) RF power transistors and MMICs, and our eighth generation LDMOS transistors (Gen8). Next-generation devices and improved products include GPS LNAs, medium power amplifiers, IF gain blocks, LO generators, satellite LNB ICs, and CATV modules. Our portfolio for the wireless communication infrastructure has expanded, with a comprehensive set of best-in-class Doherty amplifier designs, a broad selection of amplifiers (medium power, variable gain, low noise), mixers, IQ modulators, and our JESD204A-compliant, high-speed DACs and ADCs.

“I’m proud to present the 15th edition of our RF Manual. It covers NXP’s entire range of RF products and solutions in one comprehensive catalog, and I’m convinced that you’ll find this version the most compelling and useful yet.”

Kind regards,

John Croteau Sr. Vice President & General Manager Business Line High Performance RF

RF Manual web page www.nxp.com/rfmanual

NXP Semiconductors RF Manual 15th edition

5

Contents 1 Products by application

9

1.1 Wireless communication infrastructure__________________________________________________________________________________________________________________________________________________________________ 9 1.1.1 Base stations (all cellular standards and frequencies) _______________________________________________________________________________________________________________________________ 9 1.1.2 Point-to-point____________________________________________________________________________________________________________________________________________________________________________________________ 12 1.1.3 Repeater____________________________________________________________________________________________________________________________________________________________________________________________________ 14 1.2 Broadband communication infrastructure_____________________________________________________________________________________________________________________________________________________________15 1.2.1 CATV optical (optical node with multiple out-ports)________________________________________________________________________________________________________________________________ 15 1.2.2 CATV electrical (line extenders) _______________________________________________________________________________________________________________________________________________________________ 16 1.3 TV and satellite_______________________________________________________________________________________________________________________________________________________________________________________________________ 17 1.3.1 Network interface module (NIM) for TV reception___________________________________________________________________________________________________________________________________ 17 1.3.2 Basic TV tuner____________________________________________________________________________________________________________________________________________________________________________________________ 19 1.3.3 Satellite outdoor unit, low noise block (LNB) for multiple users _ ____________________________________________________________________________________________________________ 20 1.3.4 Satellite multi-switch box - 4x4 (up to 16x16) / DiSEqC / SMATV______________________________________________________________________________________________________________21 1.3.5 VSAT ________________________________________________________________________________________________________________________________________________________________________________________________________ 22 1.4 Portable devices_ ____________________________________________________________________________________________________________________________________________________________________________________________________24 1.4.1 GPS____________________________________________________________________________________________________________________________________________________________________________________________________________24 1.4.2 FM radio_ __________________________________________________________________________________________________________________________________________________________________________________________________ 25 1.4.3 Cellular receive__________________________________________________________________________________________________________________________________________________________________________________________26 1.4.4 802.11n WLAN (dual concurrent)_______________________________________________________________________________________________________________________________________________________________27 1.4.5 Generic RF front-end_________________________________________________________________________________________________________________________________________________________________________________28 1.5 Automotive ____________________________________________________________________________________________________________________________________________________________________________________________________________ 29 1.5.1 Active antenna, e.g. SDARS, GPS___________________________________________________________________________________________________________________________________________________________________ 29 1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission ___________________________________________________ 30 1.5.3 Tire pressure monitoring system_______________________________________________________________________________________________________________________________________________________________31 1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL)_________________________________________________________________________________________________________________________32 1.6 Industrial, scientific & medical (ISM)_____________________________________________________________________________________________________________________________________________________________________ 33 1.6.1 Broadcast / ISM (10 - 1500 MHz range) ___________________________________________________________________________________________________________________________________________________ 33 1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee_ ______________________________________________________________________________________________________________34 1.6.3 RF Microwave furnace application_ __________________________________________________________________________________________________________________________________________________________ 35 1.6.4 RF plasma lighting____________________________________________________________________________________________________________________________________________________________________________________ 36 1.6.5 Medical imaging _______________________________________________________________________________________________________________________________________________________________________________________37 1.7 Aerospace and defense_________________________________________________________________________________________________________________________________________________________________________________________ 38 1.7.1 Microwave products for avionics, L- and S-band radar applications _ _____________________________________________________________________________________________________ 38

2 Focus applications, products & technologies

40

2.1 Wireless communication infrastructure_ _______________________________________________________________________________________________________________________________________________________________ 40 2.1.1 VGAs with superior linearity for enhanced system performance_____________________________________________________________________________________________________________ 40 2.1.2 Doherty amplifier technology for state-of-art wireless infrastructure______________________________________________________________________________________________________42 2.1.3 The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8_______________________________________________________________________________ 44 2.2 Broadband communication infrastructure____________________________________________________________________________________________________________________________________________________________ 45 2.2.1 Connecting people, protecting your network: NXP's CATV C-family for the Chinese SARFT standard_________________________________________________ 45 2.2.2 Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks_ __________________________________________________________________________________ 48 2.3 TV and satellite______________________________________________________________________________________________________________________________________________________________________________________________________ 50 2.3.1 LNAs for TV/STB tuners with programmable gain___________________________________________________________________________________________________________________________________ 50 2.3.2 Complete satellite portfolio for all LNB architectures______________________________________________________________________________________________________________________________52 2.3.3 VSAT, 2-way communication via satellite__________________________________________________________________________________________________________________________________________________ 54 2.3.4 Low noise LO generators for microwave & mmWave radios____________________________________________________________________________________________________________________ 56 2.4 Portable devices____________________________________________________________________________________________________________________________________________________________________________________________________ 57 2.4.1 QUBiC4X SiGe:C LNAs for GPS, GloNass and Galileo with AEC-Q100 qualification_______________________________________________________________________________57 2.5 Industrial, scientific & medical_ ______________________________________________________________________________________________________________________________________________________________________________59 2.5.1 Medical applications driven by RF power_________________________________________________________________________________________________________________________________________________59 2.5.2 RF-driven plasma lighting________________________________________________________________________________________________________________________________________________________________________ 60 2.5.3 QUBiC4 Si and SiGe:C transistors for any RF function______________________________________________________________________________________________________________________________ 61 2.5.4 Buidling on decades of innovation in microwave and radar_ ___________________________________________________________________________________________________________________ 62 2.5.5 Digital broadcasting at its best________________________________________________________________________________________________________________________________________________________________ 64 2.5.6 Broadband medium power amplifiers for all 400 to 2700 MHz applications___________________________________________________________________________________________ 65 2.6 Technology_____________________________________________________________________________________________________________________________________________________________________________________________________________ 66 2.6.1 Boost efficiency and lower system cost in wireless infrastructure with GaN___________________________________________________________________________________________ 66 2.6.2 Looking for a leader in SiGe:C? You've just found us!_______________________________________________________________________________________________________________________________67 2.6.3 Completing NXP's RF power transistor offering: products in plastic packages (OMP)____________________________________________________________________________69 6

NXP Semiconductors RF Manual 15th edition

3 Products by function

70

3.1 New products_______________________________________________________________________________________________________________________________________________________________________________________________________70 3.2 RF diodes _____________________________________________________________________________________________________________________________________________________________________________________________________________73 3.2.1 Varicap diodes __________________________________________________________________________________________________________________________________________________________________________________________73 3.2.2 PIN diodes ________________________________________________________________________________________________________________________________________________________________________________________________ 74 3.2.3 Band switch diodes_ __________________________________________________________________________________________________________________________________________________________________________________ 76 3.2.4 Schottky diodes_________________________________________________________________________________________________________________________________________________________________________________________ 76 3.3 RF Bipolar transistors _________________________________________________________________________________________________________________________________________________________________________________________ 77 3.3.1 Wideband transistors________________________________________________________________________________________________________________________________________________________________________________77 3.4 RF ICs __________________________________________________________________________________________________________________________________________________________________________________________________________________ 80 3.4.1 RF MMIC amplifiers and mixers________________________________________________________________________________________________________________________________________________________________ 80 3.4.2 Wireless infrastructures ICs______________________________________________________________________________________________________________________________________________________________________ 82 3.4.3 Satellite LNB RF ICs__________________________________________________________________________________________________________________________________________________________________________________ 82 3.4.2 Low noise LO generators for VSAT and general microwave applications________________________________________________________________________________________________ 83 3.5 RF MOS transistors_ ____________________________________________________________________________________________________________________________________________________________________________________________ 83 3.5.1 JFETs_ _______________________________________________________________________________________________________________________________________________________________________________________________________ 83 3.5.2 MOSFETs__________________________________________________________________________________________________________________________________________________________________________________________________ 85 3.6 RF Modules _________________________________________________________________________________________________________________________________________________________________________________________________________ 87 3.6.1 CATV push-pulls _______________________________________________________________________________________________________________________________________________________________________________________87 3.6.2 CATV push-pulls 1 GHz_____________________________________________________________________________________________________________________________________________________________________________87 3.6.3 CATV power doublers______________________________________________________________________________________________________________________________________________________________________________ 88 3.6.4 CATV optical receivers_____________________________________________________________________________________________________________________________________________________________________________ 88 3.6.5 CATV reverse hybrids_______________________________________________________________________________________________________________________________________________________________________________ 88 3.7 RF power transistors___________________________________________________________________________________________________________________________________________________________________________________________ 89 3.7.1 Base station transistors_ ___________________________________________________________________________________________________________________________________________________________________________ 89 3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors______________________________________________________________________________________________________ 92 3.7.3 Microwave LDMOS RF power transistors__________________________________________________________________________________________________________________________________________________93 3.8 High-speed data converters________________________________________________________________________________________________________________________________________________________________________________94

4 Design support

95

4.1 S-parameters ______________________________________________________________________________________________________________________________________________________________________________________________________ 95 4.2 Simulation models_______________________________________________________________________________________________________________________________________________________________________________________________ 95 4.2.1 Spice models_____________________________________________________________________________________________________________________________________________________________________________________________95 4.2.2 Interactive datasheet ________________________________________________________________________________________________________________________________________________________________________________95 4.2.3 Simulation models for RF power devices_ _________________________________________________________________________________________________________________________________________________96 4.3 Application notes________________________________________________________________________________________________________________________________________________________________________________________________ 96 4.4 Demo boards _ _____________________________________________________________________________________________________________________________________________________________________________________________________ 96 4.4.1 RF transistors, MMIC & IC demo boards___________________________________________________________________________________________________________________________________________________96 4.4.2 RF power transistor demo boards_____________________________________________________________________________________________________________________________________________________________97 4.4.3 High-speed converter demo boards_________________________________________________________________________________________________________________________________________________________97 4.5 Samples _______________________________________________________________________________________________________________________________________________________________________________________________________________ 97 4.6 Datasheets_ _________________________________________________________________________________________________________________________________________________________________________________________________________ 97 4.7 Design-in support_ ______________________________________________________________________________________________________________________________________________________________________________________________ 98 4.8 Interactive selection guides________________________________________________________________________________________________________________________________________________________________________________ 98

5 Cross-references & replacements_________________________________________________________99 5.1

Cross-references: manufacturer types versus NXP types________________________________________________________________________________________________________________________ 99

5.2

Cross-references: NXP discontinued types versus NXP replacement types__________________________________________________________________________________________109

6 Packing and packaging information______________________________________________________ 111 6.1

Packing quantities per package with relevant ordering code_________________________________________________________________________________________________________________ 111

6.2

Marking codes list_ __________________________________________________________________________________________________________________________________________________________________________________ 114

7 Abbreviations__________________________________________________________________________ 116 8 Contacts and web links_________________________________________________________________ 117 9 Product index__________________________________________________________________________ 118

NXP Semiconductors RF Manual 15th edition

7

1. Products by application 1.1 Wireless communication infrastructure Products by application

1.1.1 Base stations (all cellular standards and frequencies) See also brochure: 'Your partner in Mobile Communication Infrastructure design', document number 9397 750 16837. Application diagram

LPF

I/Q-MOD mixer

SER I-DAC PLL VCO

PLL LPF DIGITAL BASEBAND & CONTROL

POWER AMPLIFIER

X 0

VGA

Tx BPF

MPA

HPA

Isolator

90

antenna Tx/Rx

X

SER Q-DAC

mixer

BPF

VGA

IF mixer

X

SER ADC

mixer

PLL VCO

µC LPF

VGA

duplexer

IF mixer

Rx BPF

LNA

LNA

X

SER ADC

µC

PLL VCO

PLL

antenna Rx1

TOWER MOUNTED AMPLIFIER

X

SER ADC LPF PROCESSING

VGA

IF mixer DATACONVERTERS

Rx BPF

LNA

RF SMALL SIGNAL

LNA RF POWER

The block diagram above shows base station transmit (upper part, Tx) and receive (lower part, Rx) functions, and includes the Tx feedback function (middle part, Tx feedback). The signals generated in the "Digital Baseband & Control" block follow the air interface standard requirements. These signals are interfaced to the DAC via serial interface SER. The SER can use the LVDS or JEDEC standard. After the signals are fed to the I-DAC and Q-DAC, they are converted to the analog domain. Before the I and Q signals enter the IQ modulator, they are first low-pass filtered to remove any aliasing signals. At the IQ modulator, the signals are up-converted to RF using an LO signal coming from the PLL/VCO device, typically called the LO generator. Due to device aging and variation in cell load, the up-converted signals are fed to the VGA to control the power level. An additional band pass filter is needed to remove the out-of-band spurs. The clean signal is fed to the RF power board, where the desired transmit power is made. Finally, the RF power signal is fed to the antenna via a duplexer. Directly after the final stage amplifier, a signal coupler picks up a certain amount of the RF signal, which is attenuated and then down-mixed using the IF Mixer. This signal is called the observation signal, and is used to derive coefficients for the digital pre-distortion algorithm. Since power levels vary, the observation is first fed to the VGA to control the power level, and after band pass filtering, the signal is converted to the digital domain using an ADC. The same serial interface is used to send the digital signals to the baseband processor. At the receiver, the received signal directly after the duplexer is fed to the LNA for direct amplification, since the received signal level is quite low. If the first LNA is mounted in the tower top, a long RF cable is used to interface the RF signals with a base transceiver station (BTS). A second LNA is used to amplify the received signals. Band pass filtering is applied to reduce the out-of-band signals levels before these signals are applied to the IF mixer. Signal levels that change dramatically require a VGA to maintain the full scale ranges of the I-ADC and Q-ADC for optimal conversion performance. Low pass filtering is used before the ADC to remove the aliasing signals. These digital signals are interfaced to the baseband using a serial interface such as JEDEC. The sample clocks and LO signals are derived from clock cleaners and PLLs respectively. This is denoted as Clock and PLL / VCO in the block diagram. This set-up is required to make a synchronized system. Typically denoted in SNRs, and in order to improve reception quality, the receive function is equipped with a second receiver, which is also called a diversity receiver. NXP Semiconductors RF Manual 15th edition

9

Recommended products Function

Product MMIC

Final

HPA

Integrated Doherty Final Driver/Final Driver Final Driver/Final Integrated Doherty Final

Function

HPA Doherty designs

fmin (MHz)

fmax (MHz)

P1dB (W)

GP (dB)

Package

Type

920 920 700 700 700 500 700 1805 2010 1800 2110 1800 2000 2500 2500 2500 2500 3400 3500

960 960 1000 1000 1000 1000 1000 1880 2025 2050 2170 2200 2200 2700 2700 2700 2700 3600 3800

30 250 80 140 160 300 300 250 50 140 40 10 160 40 50 100 140 100 90

29 19 19 19 19 19 19 18 14,5 19 19 19 18 17,5 17,5 17,5 17 13 13

SOT822-1 SOT502 SOT502 SOT1204 SOT502 SOT1121 SOT539 SOT539 SOT1130 SOT1204 SOT1121 SOT1179 SOT502 SOT1121 SOT1130 SOT502 SOT502 SOT502 SOT1246B

BLM6G10-30(G) BLF7G10L(S)-250 BLF8G10L(S)-80 BLP7G10S-140G BLF8G10L(S)-160 BLF6H10L(S)-300P BLF8G10L(S)-300P BLF7G20L(S)-250P BLD6G21L(S)-50 BLP7G21(S)-140P(G) BLF6G22L(S)-40P BLP7G22-10 BLF7G22L(S)-160 BLF6G27L(S)-40P BLD7G27S-50 BLF7G27L(S)-100 BLF7G27L(S)-140 BLF6G38(LS)-100 BLF7G38LS-90P

Freq band (MHz)

PPEAK (dBm)

POUT-AVG (dBm)

VDS (V)

Gain (dB)

Drain Eff. (%)

Type

728-768 920-960 1476-1511 1805-1880 1930-1990 2110-2170 2110-2170 2300-2400 2500-2700 3400-3600

58 57.3 58.1 58.6 58.2 47 57.2 55 50.3 51

50 49.3 49.6 51 50 39 49.2 47.5 42.3 43

32 30 28 28 28 28 28 28 28 28

20.5 16 16 16 16 13 16 15.2 14.5 11.5

47 50 42 47.6 40 38 47 44 39 32

SYM ASYM ASYM 3-WAY SYM SYM 3-WAY ASYM SYM SYM

Product highlight: BLF7G27L(S)-100/140 Utilising NXP’s Gen7 LDMOS technology, this pair of transistors is designed to give leading performance in 2.7 GHz LTE applications. The BLF7G27L(S)-100 is designed to be the main amplifier, and the BLF7G27L(S)-140 the peak amplifier, in asymmetrical Doherty designs. This pair, along with others at different operational frequencies, are already firm industry favourites with many design wins around the world. 10

NXP Semiconductors RF Manual 15th edition

Features

Main transistor

Peak transistor

BLF6G10LS-200RN BLF8G10LS-160 BLF7G15LS-200 BLF7G20LS-200 BLF7G20LS-250P BLD6G22L(S)-50 BLF7G22LS-160 BLF7G24LS-100 1/2 BLF7G27LS-90P BLF6G38-50

BLF6G10LS-200RN BLF7G10LS-250 BLF7G15LS-300P 2x BLF7G20LS-200 BLF7G20LS-250P BLD6G22L(S)-50 2x BLF7G22L(S)-160 BLF7G24LS-140 1/2 BLF7G27LS-90P BLF6G38-50

`` A symmetrical Doherty efficiency 37.6% with 15.2 dB gain at 47.5 dB output power `` Capable of 26-32 V operation `` Extremely low thermal resistance `` Consistent device performance `` Unrivalled ruggedness

Discrete attenuator

Function

Product RF diode

PIN diode

Product

RF transistor

SiGe:C transistor

MMIC

SiGe:C MMIC

Package SOT753 SOT753 Various^

Type BAP64Q BAP70Q BAP64

Package

Type BFU725F/N1 BFU690F BFU730F BFU760F BFU790F BGU7051 BGU7052 BGU7053

SOT343F

LNA (low noise amplifier)

Function Single VGA (variable gain amplifier)

Product

Function Dual VGA (variable gain amplifier)

Product

Function

Product

MPA (medium power amplifier) Function Dual mixer

Gain range 23 dB

MMIC

31 dB

Gain range 24 dB

MMIC

28 dB

MMIC

Type BGA7202

SOT617

BGA7204

Package

Type BGA7350

SOT617

BGA7351

Package

Type

25 dBm 24 dBm 28 dBm 28 dBm 30 dBm

SOT908 SOT89 SOT908 SOT89 SOT908

BGA7124 BGA7024 BGA7127 BGA7027 BGA7130*

Package

Type BGX7220* BGX7221*

Frequency 0.7 - 1.2 GHz 1.7 -2.7 GHz

Function Product PLL + VCO MMIC (LO generator)

Noise 131 dBc/Hz @ 1 MHz offset @ 5.3 GHz

Function IQ modulator

NFL

Product MMIC

Package

PL (1dB) @ 940 MHz

MMIC

Product

SOT650

-159 dBm/Hz

Products by application

Function

SOT1092 Package

Type

SOT617

BGX7300*

Package SOT616

Type BGX7100*

* = check status at 3.1 new products, as this type has not been released for mass production. ^ = SOD523, SOD323, SOT23 & SOT323 Function

Product

Dual-channel DAC

Data converter

Single-channel ADC

Dual-channel ADC

Max. sampling frequency

# of bits

Interface

Type

650 Msps

14

LVCMOS

DAC1405D650

160 Msps

14

LVCMOS

DAC1405D160

125 Msps

14

LVCMOS

DAC1401D125

750 Msps

14

JESD204A

DAC1408D750

80 Msps

12

LVCMOS

ADC1207S080

125 Msps

14

LVCMOS&LVDS DDR

ADC1415S125

125 Msps

14

LVCMOS&LVDS DDR

ADC1410S125

125 Msps

11

LVCMOS&LVDS DDR

ADC1112D125

125 Msps

14

LVCMOS&LVDS DDR

ADC1412D125

125 Msps

14

JES204A

ADC1413D125

Product highlight: DAC1408D750 dual 14-bit DAC with JESD204A interface Optimized for high-speed applications, such as 2.5/3/4G wireless, video broadcast, and instrumentation, this advanced 14-bit DAC has selectable interpolating filters and a four-lane CGV™ serial interface compliant with JEDEC JESD204A standard.

Features

`` Dual-channel, 14-bit resolution `` 750 Msps maximum output rate `` Interpolation filters: 2x, 4x, 8x `` Four-lane JEDEC JESD204A serial digital input `` 32-bit programmable NCO frequency synthesizer with low-power option `` MDS (Multi-DAC Synchronization) `` SPI interface `` HVQFN64 package

NXP Semiconductors RF Manual 15th edition

11

1.1.2 Point-to-point Application diagram

INDOOR UNIT POWER SUPPLY

OUTDOOR UNIT PLL VCO

0

MPA

VGA

IF

VGA

PA

MPA

BPF

90

BUF

DIGITAL SIGNAL PROCESSOR

REF

MPX

PMU

PLL VCO

0

90

ANALOG VGA

VGA

to/from IDU

MPX

REF

PMU

SYNTH

PLL

ANTENNA

PLL

IF

LNA

LNA

LNA

LPF VGA

VGA

DATA INTERFACE

brb406

Recommended products Indoor unit Function

Product

Single VGA (variable gain amplifier) Function

MMIC

Product

Dual VGA (variable gain amplifier) Function

MMIC

Product

MPA (medium power amplifier)

Function IQ modulator

MMIC

Product MMIC

Gain range 23 dB 31 dB Gain range 24 dB 28 dB

Package SOT617

Package SOT617

Type BGA7202 BGA7204 Type BGA7350 BGA7351

PL (1dB) @ 940 MHz 17 dBm 20 dBm 21 dBm 25 dBm 24 dBm 28 dBm 28 dBm 30 dBm

SOT908 SOT89 SOT908 SOT89 SOT908

BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130*

NFL

Package

Type

- 159 dBm/Hz

SOT616

BGX7100*

Package SOT89

NXP Semiconductors RF Manual 15th edition

Product MMIC

MMIC

General purpose wideband amplifiers

IF

Function

Package

IF gain block

Type

* = c heck status at 3.1 new products, as this type has not been released for mass production.

12

Function

Product RF MMIC

LNA

SOT363

Package SOT891 SiGe:C MMIC SiGe:C transistor

SOT650

SOT343F

RF transistor Wideband transistor

SOT343R SOT143R

Type BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 BGA2714 BGA2748 BGA2771 Type BGU7003 BGU7051 BGU7052 BGU7053 BFU725F/N1 BFU710F BFU730F BFG425W BFG424W BFG325/XR

Outdoor unit Single VGA (variable gain amplifier) Function

MPA (medium power amplifier)

Function Buffer

Function LNA

Function

Product

Gain range

Package

23 dB MMIC

BGA7202 SOT617

31 dB

Product

MMIC

PL (1dB) @ 940 MHz 17 dBm 20 dBm 21 dBm 25 dBm 24 dBm 28 dBm 28 dBm 30 dBm

Product RF transistor

SiGe:C transistor

Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908

SOT343F

Package SiGe:C transistor

Product

IF gain block

BGA7204

Package

Product RF transistor

SOT343F

Package

MMIC SOT363

IF

MMIC

Type

General purpose wideband amplifiers

Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130* Type BFU725F/N1 BFU730F BFU760F BFU790F Type BFU725F/N1 BFU730F BFU760F BFU790F

Function Dual VGA (variable gain amplifier) Function PLL + VCO (LO generator) Function

Oscillator

Product

Gain range

Package

24 dB MMIC

Type BGA7350

SOT617 28 dB

Product MMIC

Noise

Package

Type

-131 dBc/Hz @ 1 MHz offset @ 5.3 GHz

SOT617

BGX7300*

Package

Type BFG424W BFG425W BFU725F/N1 BFU730F BFU760F BFU790F

Product

RF transistor

BGA7351

Wideband transistor

SOT343R

SiGe:C transistor

SOT343F

Products by application

Function

* = check status at 3.1 new products, as this type has not been released for mass production.

NXP BTS Tx component demonstrator board

Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714

Product highlight: BGA7350 MMIC variable gain amplifier The BGA7350 MMIC is a dual independent digitally controlled IF variable gain amplifier (VGA) operating from 50 to 250 MHz. Each IF VGA amplifies with a gain range of 24 dB and, at its maximum gain setting, delivers 17 dBm output power at 1 dB gain compression and a superior linear performance. The BGA7350 is optimized for a differential gain error of less than ±0.1 dB for accurate gain control and has a total integrated gain error of less than ±0.4 dB. It is housed in a 32-pin leadless HVQFN package (5 x 5 mm).

Features

`` Dual independent digitally controlled 24 dB gain range VGAs, with 5-bit control interface `` 50 to 250 MHz frequency operating range `` Gain step size: 1 dB ± 0.1 dB `` 18.5 dB power gain `` Fast gain stage switching capability `` 17 dBm output power at 1 dB gain compression `` 5 V single supply operation with power-down control `` Logic-level shutdown control pin reduces supply current `` ESD protection at all pins `` Unconditionally stable NXP Semiconductors RF Manual 15th edition

13

1.1.3 Repeater Application diagram Dual mixer

Tx0 PA

mixer

Dual DAC

Dual ADC

LPF I-DAC

PA

LPF

VGA

LPF

VGA

Dual mixer mixer

Q-DAC

PLL VCO LO Signal brb631

Product

Dual-channel DAC

Dual-channel ADC Product Driver/Final Integrated Doherty Driver/Final MMIC Integrated Doherty Driver/Final Function

fmin (MHz) 1450 1800 2010 1 2100 2110 2300 3400 3400

Product

MPA (medium power amplifier)

Function

MMIC

Product

Dual VGA (variable gain amplifier) Function

MMIC Product

Dual mixer Function

MMIC

Max. sampling frequency 650 Msps 160 Msps 125 Msps 750 Msps 125 Msps 125 Msps 125 Msps

fmax (MHz) 1550 2000 2025 2200 2200 2170 2700 3800 3800

P1dB (W) 40 40 50 10 30 50 75 25 50

Product

PLL + VCO (LO generator)

MMIC

14 14 14 14 11 14 14 GP (dB) 22 18.8 14.5 18.5 29.5 14 17 15 14

Interface

Type

LVCMOS LVCMOS LVCMOS JESD204A LVCMOS&LVDS DDR LVCMOS&LVDS DDR JES204A

DAC1405D650 DAC1405D160 DAC1401D125 DAC1408D750 ADC1112D125 ADC1412D125 ADC1413D125

Package SOT1112A SOT608A SOT1130B SOT538A SOT834-1 SOT1130B SOT1121B SOT608B SOT502A

Type BLF6G15L-40BRN BLF6G20-40 BLD6G21LS-50 BLF6G21-10G BLM6G22-30 BLD6G22LS-50 BLF7G27LS-75P BLF6G38S-25 BLF6G38-50

Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908

Type BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130

Gain range 24 dB

Package

Type BGA7350

28 dB Frequency range 1.7 - 2.7 GHz 0.7 - 1.2 GHz

SOT617

BGA7351

Package

Type BGX7220* BGX7221*

SOT1092 Package

MMIC

LNA

# of bits

PL (1 dB) @ 940 MHz 21 dBm 25 dBm 24 dBm 28 dBm 28 dBm 30 dBm

Product

Function

LNA

ADC

Data converter

HPA

RF SAW

Rx0

mixer

Clock Recovery jitter cleaner

Function

LNA

Rx1

mixer

Function

LNA RF SAW

ADC DDC/ DUC Filtering

Tx1

Dual VGA LPF

Type BGU7051 BGU7052 BGU7053

SOT650

Noise

Package

Type

-131 dBc/Hz @ 1 MHz offset @ 5.3 GHz

SOT617

BGX7300*

* = check status at 3.1 new products, as this type has not been released for mass production.

Product highlight: BGX7221 MMIC dual down-mixer The BGX7221 combines a pair of high performance, high linearity down-mixers for use in receivers that have a common local oscillator used with, for example, main and diversity paths. The device covers frequency bands from 1700 to 2700 MHz with an extremely flat behavior.

14

NXP Semiconductors RF Manual 15th edition

Features

`` 8.5 dB conversion gain over all bands `` 13 dBm input, 1 dB compression point `` 25.5 dBm input third-order intercept point `` 10 dB (typ) small signal noise figure `` Integrated active biasing `` Single +5 V supply operation `` Power-down per mixer with hardware control pins `` Low bias current in power-down mode `` Matched 50 Ω single-ended RF and LO input impedances `` ESD protection at all pins

1.2 Broadband communication infrastructure 1.2.1 CATV optical (optical node with multiple out-ports)

RF power amplifier

Products by application

Application diagram

duplex filter coax out port 1

fiber in

RF forward receiver

RF preamplifier

splitter

coax out port 2

coax out port 3

coax out port 4 bra852

Recommended products Function RF forward receiver Function RF pre-amplifier

Product Forward path receiver

Frequency 870 MHz

Product Frequency Power doubler 870 MHz 870 MHz Push-pulls 1 GHz

Function RF power amplifier

Product Power doublers

Frequency 870 MHz 1 GHz

Package SOT115 SOT115 SOT115

Type BGO807 BGO807CE BGO827

Gain (dB) 18.2 - 18.8 18 - 19 21 - 22 23 - 24.5 27 - 28.5

Type BGD812 BGY885A BGY887 CGY1043 CGY1047

Gain (dB) 22 - 24 24 - 26 22 - 23.5 26.5 - 28

Type CGD942C CGD944C CGD1042Hi CGD1046Hi

Product highlight: BGO807CE optical receiver The BGO807CE is an integrated optical receiver module that provides high output levels and includes an integrated temperaturecompensated circuitry. In your optical node design, BGO807CE enables a high performance/ price ratio and ruggedness. When upgrading an HFC network from analog to digital, our BGO807CE is the perfect fit.

Features

`` E xcellent linearity `` Low noise `` E xcellent flatness `` Standard CATV outline `` Rugged construction `` Gold metallization ensures excellent reliability `` High optical input power range

NXP Semiconductors RF Manual 15th edition

15

1.2.2 CATV electrical (line extenders) Application diagram

duplex filter

RF preamplifier

RF power amplifier

duplex filter

coax in

coax out

RF reverse amplifier

bra505

Recommended products Function

Product

Frequency 550 MHz 600 MHz 750 MHz

RF pre-amplifier

Push-pulls

870 MHz

1003 MHz

Function

Product

RF reverse amplifier

Reverse hybrids

Frequency 5-75 MHz 5-120 MHz 5-200 MHz

Gain (dB) 34 - 35 33.5 - 35.5 26.2 - 27.8 21 - 22 33.2 - 35.2 18 - 19 21 - 22 18 - 19 21 - 22 33.5 - 34.5 34.5 - 36.5 18 - 19 21 - 22.5 23 - 24.5 27 - 28.5 29 - 31 32 - 34

Type BGY588N BGY588C BGY587B BGY687 BGE788C BGY785A BGY787 BGY885A BGY887 BGY888 CGY888C BGY1085A CGY1041 CGY1043 CGY1047 CGY1049 CGY1032

Gain (dB) 29.2 - 30.8 24.5 - 25.5 23.5 - 24.5

Type BGY68 BGY66B BGY67A

Function

Product

Frequency 550 MHz 750 MHz

870 MHz RF power amplifier

Power doublers

1003 MHz

Gain (dB) 18-19 19.5 - 20.5 18.2 - 18.8 18.2 - 18.8 20 - 20.6 18 - 19 18.2 - 18.8 19.7 - 20.3 22 - 23 24 - 26 22 - 24 24 - 26 19.5 - 22 22 - 23.5 23.5 - 25.5 26 - 28 22 - 24 23.5 - 25.5 26 - 28

All available in SOT115 package.

Product highlight: CGD1046Hi The CGD1046Hi with a high-output power level is primarily designed for use in fiber deep-optical-node applications (N+1/2/3). This 1 GHz hybrid amplifier solution offers an extended temperature range, high power overstress capabilities in case of surges, and high ESD levels resulting in a low cost of ownership. It’s designed for durability and offering superior ruggedness.

16

NXP Semiconductors RF Manual 15th edition

Features

`` High-output power `` High power gain for power doublers `` Extremely low noise `` Dark Green products `` GaAs HFET dies for high-end applications `` Rugged construction `` Superior levels of ESD protection `` Integrated ringwave protection `` Design optimized for digital channel loading `` Temperature compensated gain response `` Optimized heat management `` Excellent temperature resistance

Type BGD502 BGD704 BGD712 BGD712C BGD714 BGD802 BGD812 BGD814 CGD942C CGD944C CGD1042H CGD1044H CGD1040Hi CGD1042Hi CGD1044Hi CGD1046Hi CGD982HCi CGD985HCi CGD987HCi

1.3 TV and satellite 1.3.1 Network interface module (NIM) for TV reception

RF input

VGA

surge

Products by application

Application diagram

CONVENTIONAL TUNER OR SILICON TUNER

RF SW WB LNA

RF output

brb403

Recommended products Function

Product 5 V silicon RF switch

RF Switch / PLT switch

MOSFET 3.3 V silicon RF switch

Package SOT23 SOT143B SOT143R SOT343 SOT343R SOT143B SOT143R SOT343 SOT343R

Type BF1107 BF1108 BF1108R BF1108W BF1108WR BF1118 BF1118R BF1118W BF1118WR

Product highlight: Save energy with BF11x8 The BF11x8 series are small signal, RF switching MOSFETs that can be used for switching RF signals up to 1 GHz. By using the BF11x8 series as an RF switch, you can save a considerable amount of energy. When a recording device (DVD-R, HDD-R, VCR, DVR) is powered off, viewers can still watch TV, although the antenna is looped via the recording device. Without the BF11x8, the antenna signal is lost.

Function

AGC control amplifier

Product

MOSFET

Package

Type

2-in-1 with band switch @5V

SOT363

BF1215

2-in-1 @ 5 V

SOT363

BF1216

5V

SOT343

BF1217

Note: given that there is now an LNA before the MOSFET, the gain of these MOSFETs is made slightly lower and the cross-modulation higher. That way, the MOSFET would not constantly be under AGC even under nominal RF input level.

When power to the recording device is on, the BF11x8 is open, so the RF signal travels via the recording device to the TV tuner. When power to the recording device is off, the BF11x8 closes. This ensures that the RF signal is looped through directly to the TV tuner and that TV reception is guaranteed. Energy is saved because the recording device can be powered off.

NXP Semiconductors RF Manual 15th edition

17

Recommended products Function

VGA

LNA

Product

MMIC

RF bipolar transistor

Package

Type

Wideband amplifier with gain levels of 5 and 10 dB, plus a bypass mode. Vsupply = 5 V

SOT363

BGU7033^

Wideband amplifier with gain level of 10 dB and a bypass mode. Vsupply = 5 V

SOT363

BGU7032^

Wideband amplifier with gain level of 10 dB and a bypass mode. Vsupply = 3.3 V

SOT363

BGU7042^

Wideband amplifier with gain level of 10 dB. Vsupply = 5 V

SOT363

BGU7031^

Wideband amplifier with gain level of 10 dB. Vsupply = 3.3 V

SOT363

BGU7041^

Wideband transistor

SOT143 SOT89

BFG520 BFG540 BFQ540

^ = This new series of LNA MMICs is designed specifically for high linearity (IP3O of 29 dBm), low noise applications like those in an active splitter or NIM tuner. Housed in a 6-pin SOT363 plastic SMD package, these MMICs are equipped with internal bias and matched to 75 Ω internally. For the VGAs, current consumption is < 5 mA during the bypass mode. Only two external components are needed, thus saving precious circuit board space.

Product highlight: Make a high performance active splitter in a NIM tuner with BGU703x/ BGU704x Today's TV tuners require complicated signal handling and benefit from flexibility in design. The front-end of a TV signal receiver is no longer just a tuned receiver, but has evolved into an RF Network Interface Module (NIM) with tuned demodulators, active splitters,

18

NXP Semiconductors RF Manual 15th edition

and remodulators. The active splitter requires an LNA with excellent linearity. NXP has developed two new series of LNA/VGA MMICs (BGU703x/BGU704x), designed especially for high linearity (P3O of 29 dBm) in low noise applications such as an active splitter in a NIM tuner. The BGU703x family operates at a supply voltage of 5 V and is intended for use with normal can tuners. The BGU704x family operates at 3.3 V and works seamlessly with our Si tuner ICs, which also operate at 3.3 V.

1.3.2 Basic TV tuner Application diagram

MOSFET

From antenna, cable, active splitter, etc.

MOPLL IC

Products by application

RF input

IF

VAGC

bra500

Recommended products Function

Product VHF low

Input filter

Varicap diode

VHF high

UHF

Function

Product

5V

RF pre-amplifier

MOSFET 2-in-1 @ 5 V

V

2-in-1 @ 3 V

Package SOD323 SOD523 SOD882D SOD323 SOD523 SOD523 SOD882D SOD882D SOD323 SOD882D SOD523 SOD523

Type BB152 BB182 BB182LX BB153 BB178 BB187 BB178LX BB187LX BB149A BB179LX BB179 BB189

Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT666 SOT666 SOT363 SOT363 SOT363 SOT666

Type BF1201 BF1202 BF1105 BF1211 BF1212 BF1102R BF1203 BF1204 BF1205 BF1205C BF1206 BF1207 BF1208 BF1208D BF1210 BF1214 BF1218 BF1206F

Function Bandswitching

Function

Bandpass filter

Product

Varicap diode

VHF high

UHF

Function

Product VHF low

Oscillator

Varicap diode

VHF high

UHF

RF pre-amplifier

The device consists of two dual gate mosfet amplifiers in a small SOT666 flat lead package. The BF1206F is a true low power device specified for low voltage and low currents, intended for use in mobile applications where power consumption is critical. Performance is suitable for application at supply voltages of 3 V and drain currents of 4 mA.

Bandswitch diode

VHF low

Function

Product highlight: BF1206F dual gate MOSFET double amplifier

Product

Product

MOSFET

Package SOD523 SOD523 SOD523

Type BA277 BA891 BA591

Package SOD323 SOD882D SOD523 SOD323 SOD882D SOD523 SOD882D SOD523 SOD323 SOD882D SOD523 SOD523

Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189

Package SOD323 SOD882D SOD523 SOD323 SOD882D SOD523 SOD882D SOD523 SOD323 SOD882D SOD523 SOD523

Type BB152 BB182LX BB182 BB153 BB178LX BB178 BB187LX BB187 BB149A BB179LX BB179 BB189

Package

Type

2-in-1 with band switch @5V

SOT363

BF1215

2-in-1 @ 5 V

SOT363

BF1216

5V

SOT343

BF1217

Features

`` Low-power specified `` Two amplifiers in one small SOT666 package `` Shared gate 2 and source leads `` Each amplifier is biased by an external bias resistor `` E xcellent noise and cross-modulation performance

NXP Semiconductors RF Manual 15th edition

19

1.3.3 Satellite outdoor unit, low noise block (LNB) for multiple users Looking for fully integrated mixer / oscillator / downconverter? See chapter 2.3.2 Complete satellite portfolio for all LNB architectures Application diagram horizontal 1st antenna stage LNA

2nd stage LNA

3rd stage LNA

mixer

H low IF amplifier

oscillator

low mixer BIAS IC

V low mixer

IF amplifier H high

(4 x 2) IF SWITCH

IF amplifier

IF out 1

IF amplifier

vertical antenna

high

oscillator V high

1st stage LNA

2nd stage LNA

3rd stage LNA

mixer

IF amplifier

IF amplifier

IF out 2

brb022

Recommended products Function

Product RF bipolar transistor

Oscillator RF transistor

Function

Wideband transistor SiGe:C transistor

Product General purpose amplifier

1st stage IF amplifier

MMIC IF gain block

RF bipolar transistor Function

Wideband transistor

Product

IF switch

RF diode

PIN diode

Package SOT343 SOT343F SOT343F

Type BFG424W BFG424F BFU710F BFU725F/N1 BFU730F

Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT343 SOT343F

Type BGA2711 BGA2712 BGA2748 BGA2714 BGA2717 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BFG424W BFG424F

Package various various various various various

Type BAP64^ BAP51^ BAP1321^ BAP50^ BAP63^

Function

Product General purpose amplifier

Output stage IF amplifier

MMIC IF gain block

Package SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363

Type BGA2709 BGA2776 BGM1014 BGM1012 BGA2716 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866

RF bipolar transistor

Wideband transistor

SOT343

BFG325

2nd stage LNA

RF transistor

SiGe:C

SOT343F

BFU710F BFU730F

SiGe:C transistor

SOT343F

SiGe:C transistor

SOT343F

Function

Product

3 rd stage LNA

RF transistor

Function

Product

Mixer

RF transistor

Package

Package

Type BFU710F BFU730F Type BFU710F BFU730F

^ = also available in ultra small leadless package SOD882D.

Product highlight: BGA28xx-family of IF gain blocks The BGA28xx IF gain blocks are silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifiers with internal matching circuit in a 6-pin SOT363 plastic SMD package.

20

NXP Semiconductors RF Manual 15th edition

Features

`` No output inductor necessary when used at the output stage `` Internally matched to 50 Ω `` Reverse isolation > 30 dB up to 2 GHz `` Good linearity with low second order and third order products `` Unconditionally stable (K > 1)

1.3.4 Satellite multi-switch box - 4 x 4 (up to 16 x 16) / DiSEqC / SMATV Application diagram

satellite dishe(s)

input amplifiers LNB

Products by application

input terrestrial amplifier input terrestrial

output amplifiers coax out to STB SWITCH MATRIX FOR 4 × 4, NEEDS 16 (SINGLE) PIN DIODES

coax out to STB coax out to STB coax out to STB brb023

Recommended products Function Input amplifier terrestrial

Function

Product

MMIC

Product MMIC

Input amplifier LNB

Package General purpose medium power amplifier

RF bipolar transistor

General purpose amplifier Wideband transistor SiGe:C transistor

Function

Switch matrix

Product

RF diode

RF transistor

SOT89 SOT908 Package SOT363 SOT363 SOT363 SOT363 SOT343 SOT343 SOT143 SOT143 SOT343F Package

PIN diode

SiGe:C transistor

Various

SOT343F

Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 Type BGA2771 BGA2776 BGA2709 BGM1012 BFG325 BFG425W BFG520 BFG540 BFU725F/N1 BFU730F Type BAP50^ BAP51^ BAP63^ BAP64^ BAP70^ BAP1321^ BFU725F/N1 BFU730F

Function

Product

Package General purpose medium power amplifier

MMIC

General purpose amplifier

Output amplifier

RF bipolar transistor

Wideband transistor SiGe:C transistor

SOT89 SOT908 SOT363 SOT363 SOT363 SOT223 SOT223 SOT223 SOT143 SOT343F

Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7124 BGM1011 BGM1013 BGM1014 BFG135 BFG 591 BFG198 BFG540 BFU725F/N1 BFU730F

^ = also available in ultra small leadless package SOD882D.

Product highlight: PIN diodes for switching matrix In addition to delivering outstanding RF performance, this component simplifies design-in because of its extremely low forward resistance, diode capacitance, and series inductance. Significant board space is saved by supplying a range of highly compact package options – including SOD523, SOD323 and leadless SOD882D.

Features

`` High isolation, low distortion, low insertion loss `` Low forward resistance (Rd) and diode capacitance (Cd) `` Ultra-small package options

NXP Semiconductors RF Manual 15th edition

21

1.3.5 VSAT Application diagram

OUTDOOR UNIT

INDOOR UNIT IF

POWER SUPPLY

PA

IF1

MOD BUF

DIGITAL SIGNAL PROCESSOR

REF

MPX

to/from IDU

REF

MPX

PMU

PMU

LNA

IF2

SYNTH

PLL

´N

PLL

OMT

ANTENNA

BUF

DATA INTERFACE

IF1

DEMOD

Product

Package

IF gain block

MMIC

MMIC

General purpose wideband amplifiers

SOT363

IF

Function

Product

LNA

22

Package SiGe:C transistor

SOT343F

Wideband transistor

SOT343R

RF transistor

NXP Semiconductors RF Manual 15th edition

LNA1 brb405

Recommended products Indoor unit Function

LNA2

SOT143R

Type BGA2800 BGA2801 BGA2815 BGA2816 BGM1012 BGA2714 BGA2748 BGA2771 Type BFU725F/N1 BFU710F BFU725F/N1 BFU730F BFG425W BFG424W BFG325/XR

Recommended products Outdoor unit Product

IF gain block

Package

MMIC SOT363

IF

MMIC

Function

General purpose wideband amplifiers

Product

LNA2

Function

Package

RF transistor

SiGe:C transistor

MMIC

SiGe:C MMIC

Product PLL

Function

Oscillator

RF IC

SOT891 Package

SiGe:C IC

Product

SOT616

Package

Product RF diode

Function

Product

RF transistor

Type BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGU7003 Type TFF1003HN TFF1007HN TFF11xxxHN^ Type BFG424W BFG425W BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F

Wideband transistor

SOT343R

SiGe:C transistor

SOT343F

Varicap diode

Package SOD523

Type BB202

Package

Type BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F

RF transistor

Function Synth

Buffer

SOT343F

Type BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012 BGA2714

SiGe:C transistor

SOT343F

Products by application

Function

^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.4

Product highlight: TFF1003HN The TFF1003HN is a Ku-band frequency generator intended for low phase noise Local Oscillator (LO) circuits for Ku-band VSAT transmitters and transceivers. The specified phase noise complies with IESS-308 from Intelsat.

Features

`` Phase noise compliant with IESS-308 (Intelsat) `` LO generator with VCO range from 12.8 GHz to 13.05 GHz `` Input signal 50 MHz to 815 MHz `` Divider settings 16, 32, 64, 128 or 256

NXP Semiconductors RF Manual 15th edition

23

1.4 Portable devices 1.4.1 GPS Application diagram

external active antenna LNA

BPF

SPDT

embedded antenna LNA

BPF

BPF

GPS RECEIVER IC 001aan955

Recommended products Function

Product

SPDT Switch

Function

RF diode

Package PIN diode

Product RF transistor

various

Package SiGe:C transistor

SOT343F SOT891

LNA MMIC

SiGe:C MMIC

SOT886

Type BAP64^ BAP1321^ BAP51^ Type BFU725F /N1 BFU710F BFU730F BGU7003 BGU7003W BGU7004 BGU7005 BGU7007 BGU7008

^ = also available in ultra-small leadless package SOD882D.

Product highlight: BGU7007 SiGe:C LNA MMIC for GPS, GLONASS, and Galileo The BGU7007 is a low noise amplifier (LNA) for GNSS receiver applications in a plastic, leadless, 6-pin, extremely-small SOT886 package. It requires only one external matching inductor and one external decoupling capacitor.

24

NXP Semiconductors RF Manual 15th edition

Features

`` Covers full GNSS L1 band, from 1559 to 1610 MHz `` Noise figure (NF) = 0.85 dB `` Gain = 18.5 dB `` High 1 dB compression point of -12 dBm `` High out-of-band IP3i of 4 dBm `` Supply voltage 1.5 to 2.85 V `` Power-down mode current consumption < 1 µA `` Optimized performance at low supply current of 4.8 mA `` Integrated temperature stabilized bias for easy design `` Requires only one input matching inductor and one supply decoupling capacitor

1.4.2 FM radio Application diagram

Products by application

headset antenna LNA

SPDT

embedded antenna LNA

FM RECEIVER IC 001aan956

Recommended products Function SPDT switch

Function

Product RF diode

Package PIN diode

Product

various

Type BAP64^ BAP 65^ BAP1321^ BAP51^

Package

Type

RF transistor

SiGe:C transistor

SOT343F

BFU725F /N1

MMIC

SiGe:C MMIC

SOT891 SOT886

BGU7003 BGU7003W

LNA

^ = also available in ultra-small leadless package SOD882D.

Product highlight: BGU7003W MMIC wide band amplifier The BGU7003W is a wideband amplifier in SiGe:C technology for high-speed, low noise applications. It is housed in a plastic, leadless, 6-pin, extremely-thin, small-outline SOT886 package.

Features

`` Applicable between 40 MHz and 6 GHz `` High ohmic FM LNA: 13 dB gain and 1.1 dB NF at 100 MHz `` 50 Ω FM LNA: 15 dB gain and 1.4 dB NF at 100 MHz `` Integrated temperature-stabilized bias for easy design `` Bias current configurable with external resistor `` Power-down mode current consumption < 1 μA `` ESD protection > 1 kV Human Body Model (HBM) on all pins

NXP Semiconductors RF Manual 15th edition

25

1.4.3 Cellular receive Application diagram

GSM/ EDGE

GSM/EDGE FE

SWITCH

TRANSCEIVER

PA BPF

UMTS LTE

duplexer

001aan957

Recommended products Function LNA

Product MMIC

SiGe:C MMIC

Package SOT891 SOT886

Type BGU7003 BGU7003W

Product highlight: BGU7003 MMIC wideband amplifier The BGU7003 MMIC is a wideband amplifier in SiGe:C technology for high-speed, low noise applications. It is housed in a plastic leadless 6-pin extremely thin small outline SOT886 package.

26

NXP Semiconductors RF Manual 15th edition

Features

`` Applicable between 40 MHz and 6 GHz `` LTE LNA: 1 dB NF, 18.5 dB gain and -5 dBm IIP3 at 750 MHz `` Integrated temperature stabilized bias for easy design `` Bias current configurable with external resistor `` Power-down mode current consumption < 1 μA `` ESD protection > 1 kV Human Body Model (HBM) on all pins

1.4.4 802.11n WLAN (dual concurrent)

low pass filter

Products by application

Application diagram

PActrl Tx

antenna SPDT switch

medium power amplifier

APPLICATION CHIPSET

Rx bandpass filter

LNA

SPDT bra502

Recommended products Function Medium power amplifier

Function LNA

Product MMIC

Package Medium power amplifier

Product RF Transistor MMIC

SOT89 SOT908

Package SiGe:C transistor SiGe:C MMIC

SOT343F SOT891

Type BGA7024 BGA7027 BGA7124 BGA7127 Type BFU725F/N1 BFU730F BGU7003

Product highlight: BGA7127 MMIC medium power amplifier The BGA7127 MMIC is a one-stage driver amplifier, offered in a low-cost ultra small SOT908 leadless package. It delivers 28 dBm output power at 1 dB gain compression and superior performance for various narrowband-tuned application circuits at frequencies up to 2700 MHz.

Features

`` 400 to 2700 MHz operating range `` 13 dB small signal gain at 2 GHz `` 28 dBm output power at 1 dB gain compression `` Integrated active biasing `` 3.3 / 5 V single supply operation `` Simple quiescent current adjustment `` 1 μA shutdown mode

NXP Semiconductors RF Manual 15th edition

27

1.4.5 Generic RF front-end Application diagram

antenna

filter

LNA

filter

mixer

buffer SPDT switch

filter

VCO

PA

driver

LOW FREQUENCY CHIP SET

VCO

bra850

Recommended products Function

Product

SPDT Switch

RF diode

Bandswitch diode PIN diode

Function

Product Wideband transistor

RF bipolar transistor

LNA

MMIC Function

Product RF bipolar transistor

Driver MMIC

SiGe:C transistor

Package SOD523 SOD323 various various

Type BA277 BA591 BAP51^ BAP1321^

Function

Package SOT23 SOT323 SOT323

Type PBR951 PRF957 PRF947 BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGA2001 BGA2003

Function

SOT343F

SOT343R Low noise wideband ampl. SOT343R

Wideband transistor Amplifier Gen. purpose wideband ampl.

Package SOT323 SOT23 SOT363 SOT363 SOT363

Mixer

Buffer

Function Power amplifier

Function VCO

Product RF bipolar transistor

Wideband transistor

MMIC

Linear mixer

Product RF bipolar transistor

Wideband transistor

Product

MMIC

Product Varicap diodes

Gen. purpose wideband ampl.

VCO varicap diodes

Package SOT343 SOT343 SOT343 SOT363

Type BFG410W BFG425W BFG480W BGA2022

Package SOT23 SOT323 SOT323 SOT416

Type PBR951 PRF957 PRF947 PRF949

Package

Type BGA6289 BGA6489 BGA6589 BGA7024 BGA7027

SOT89

Package SOD523 SOD323

Type BB198 BB156

Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776

^ = also available in ultra small leadless package SOD882D

Product highlight: BFU790F silicon NPN germanium microwave transistor Silicon NPN germanium microwave transistor for high-speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

28

NXP Semiconductors RF Manual 15th edition

Features

`` Low noise, high linearity microwave transistor `` 110 GHz fT silicon germanium technology `` High maximum output power at 1 dB compression of 20 dBm at 1.8 GHz

1.5 Automotive 1.5.1 Active antenna, e.g. SDARS, GPS

Products by application

Application diagram

antenna 1st stage LNA

2nd stage LNA

filter

3rd stage LNA

CHIPSET 001aan958

Recommended products Function 1st stage LNA Function 2nd stage LNA

Function 3 rd stage LNA

Product MMIC

Package Low noise wideband amplifier

Product

MMIC

SOT343R SOT343F Package SOT343F

General purpose wideband amplifier

Product

SOT363

Package

RF transistor

SiGe:C transistor

MMIC

SiGe:C MMIC

SOT343F SOT891

Type BGA2001 BGA2003 BFU730F Type BFU690F BGM1013 BGM1011 BGA2715 BGA2748 Type BFU690F BFU725F/N1 BFU790F BGU7003

Product highlight: BGU7003 MMIC wideband amplifier Manufactured in NXP’s latest SiGe:C process, this high frequency RF MMIC delivers high-quality reception with extended battery life. It is a cost-effective, silicon-based alternative to GaAs devices, and offers higher integration and easier design-in than discrete bipolar transistors.

Features

`` Low noise, high-gain microwave MMIC `` Maximum stable gain = 19 dB at 1.575 GHz `` 110 GHz fT-silicon germanium technology `` Optimized performance at low (5 mA) supply current `` Extremely thin, leadless 6-pin SOT891 package `` Integrated biasing and shutdown for easy integration

NXP Semiconductors RF Manual 15th edition

29

1.5.2 Remote keyless entry, RF generic front-end with dedicated antenna for reception and transmission Application diagram

antenna filter

receiver

LNA

filter

mixer

LOW FREQUENCY CHIP SET buffer VCO

antenna filter

transmitter

PA

driver

VCO

LOW FREQUENCY CHIP SET bra851

Recommended products Function

Product RF bipolar transistor

LNA MMIC

Wideband transistor

Low noise SOT343R wideband ampl. SiGe:C MMIC

Function

Product RF bipolar transistor

Driver MMIC

Function VCO

Package SOT23 SOT323 SOT323

SOT891

Package Wideband SOT323 transistor SOT23 Amplifier SOT363 Gen. purpose SOT363 wideband ampl. SOT363

Product Varicap diodes

VCO varicap diodes

Package SOD323 SOD323 SOD523 SOD323

Type PBR951 PRF957 PRF947 BGA2001 BGA2002^ BGA2003 BGU7003 Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 Type BB148 BB149A BB198 BB156

Function Mixer

Function Buffer

Function

Power amplifier

Product RF bipolar transistor

Wideband transistor

MMIC

Linear mixer

Product RF bipolar transistor

Product RF bipolar transistor MMIC

^ = AEC-Q101 qualified (some limitations apply)

Product highlight: Varicap diodes as VCO Varicap diodes are principally used as voltage varicap capacitors, with their diode function a secondary option. These devices are ideal for voltage controlled oscillators (VCOs) in ISM band applications.

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NXP Semiconductors RF Manual 15th edition

Features

`` E xcellent linearity `` E xcellent matching `` Very low series resistance `` High capacitance ratio

Wideband transistor

Wideband transistor Amplifier Gen. purpose wideband ampl.

Package SOT343 SOT343 SOT343 SOT363

Type BFG410W BFG425W BFG480W BGA2022

Package SOT23 SOT323 SOT323 SOT416

Type PBR951 PRF957 PRF947 PRF949

Package SOT323 SOT23 SOT363 SOT363 SOT363 SOT908

Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776 BGA7124

1.5.3 Tire pressure monitoring system

Products by application

Application diagram

antenna filter

PA

driver

VCO

SENSOR brb216

Recommended products Function

PA

Function

Product RF bipolar transistor

Product RF bipolar transistor

Driver MMIC

Function VCO

Wideband transistor

Wideband transistor Amplifier Gen. purpose wideband ampl.

Product Varicap diodes VCO varicap diodes

Package SOT23 SOT323 SOT23 SOT323 SOT323

Type BFR92A BFR92AW BFR94A^ BFR93AW BFR94AW^

Package SOT323 SOT23 SOT363 SOT363 SOT363

Type PRF957 PBR951 BGA2031/1 BGA2771 BGA2776

Package SOD523 SOD323

Type BB198 BB156

^ = AEC-Q101 qualified (some limitations apply)

Product highlight: BFR94AW silicon NPN transistor Designed for use in RF amplifiers, mixers and oscillators with signal frequencies up to 1 GHz, this silicon NPN transistor is housed in a plastic SOT323 (S-mini) package.

Features

`` High power gain `` Gold metallization ensures excellent reliability `` SOT323 (S-mini) package `` AEC-Q101 qualified

NXP Semiconductors RF Manual 15th edition

31

1.5.4 Car radio receiver (CREST ICs: TEF6860HL, TEF6862HL) Application diagram

FM input filter & AGC

1st mixer

IF bandpass filter

2nd mixer

variable BW filter

IF limiter FM deamplifier modulator f

AGC & hum filter

oscillator

V

FM MPX

oscillator

AM LNA DET RF input filter

1st mixer

IF bandpass filter

2nd mixer

IF bandpass filter

IF AM deamplifier modulator

AM audio

bra501

Recommended products Function AM LNA

Product RF transistor

Function

Product

FM input filter & AGC

RF diode

JFET

Varicap diode PIN diode

Package SOT23

Type BF862

Package SOT23 SOT23 SOD523 SOD323

Type BB201^ BB207 BAP70-02 BAP70-03

Function AGC & hum filter

Product

Function

Product

Oscillator

RF diode

RF diode

Package

Type

PIN diode

SOT363

BAP70AM

Varicap diode

Package SOD323 SOD523

Type BB156 BB208-02

^ = OIRT

Note 1: These recommended discrete products are applicable for NICEPACS, CCC and DDICE: NICE:TEA6840H,TEA6845H,TEA684 6H, NICEPACS:TEA6848H,TEA6849H; CCC:TEF6901H,TEF6903H; DDICE:TEA6721HL. All recommended discrete products are applicable, excluding AM LNA in: DICE2:TEF6730HWCE.

Product highlight: BF862 junction field effect transistor Our tuning portfolio contains excellent products for car radio reception applications and in-vehicle media platforms. The NXP devices for this application ensure excellent reception quality and ease of design-in. Performance is demonstrated in reference designs. The high performance junction FET BG862 is specially designed for AM radio amplifiers.

32

NXP Semiconductors RF Manual 15th edition

Note 2: Phone and portable radio (IC:TEA5767/68) use varicap BB202 as FM oscillator.

Features

`` High transition frequency and optimized input capacitance for excellent sensitivity `` High transfer admittance resulting in high gain `` Encapsulated in the versatile and easy to use SOT23 package

1.6 Industrial, scientific & medical (ISM) 1.6.1 Broadcast / ISM (10 - 1500 MHz range)

Products by application

Application diagram

typ. 0.5 kW DVB-T Driver stages

TV exciter DVB-T

typ. 5 kW DVB-T output power harmonic filter power monitor

8× final amplifiers

Recommended broadcast products Function Driver

Final

fmin (MHz)

fmax (MHz)

P1dB (W)

ηD (%)

VDS (V)

Package

Type

470 470 470 470 470 470 470 470

860 860 860 860 860 860 860 860

7 24 30 70 75 90 110 120

33 33 31 32 32 31 30 31

50 42 50 50 42 42 50 50

SOT467C SOT467 SOT467 SOT539A SOT979A SOT1121 SOT539A SOT539A

BLF642 BLF871(S) BLF881(S) BLF884P BLF878 BLF879P BLF888 BLF888A

Recommended ISM products Function

Driver

Final

fmin (MHz)

fmax (MHz)

P1dB (W)

VDS (V)

0 0 0 0 10 1 1 1 1 1 1 10 470 10 1400 10 470 470 88 10 10 10

1000 1000 1500 1500 500 1400 1000 1000 1400 800 1500 500 860 500 1500 500 860 860 108 500 500 500

5 10 5 10 20 35 100 120 100 300 150 300 300 500 500 600 600 450 1000 500 1200 1200

50 50 32 32 50 32 42 50 32 32 32 50 50 50 50 50 50 42 50 50 50 50

Product highlight: BLF888A LDMOS power transistor NXP’s 50 V high voltage LDMOS process enables highest power and unequalled ruggedness. The BLF888A (VSWR > 50:1) delivers the highest power level for digital broadcasting available to date. 

Package

Type

SOT1179 SOT1179 SOT1179 SOT1179 SOT467C SOT467C SOT467 SOT467 SOT540A SOT540A SOT1120 SOT502 SOT539A SOT1121A/B SOT539 SOT539A SOT539 SOT539A3 SOT539 SOT1240 SOT539A SOT539A

BLP10H605 BLP10H610 BLP15M705 BLP15M710 BLF571 BLF642 BLF871 BLF881 BLF645 BLF647 BLF647P BLF573(S) BLF884P BLF573P BLF6G15L(S)-500H BLF574 BLF888A(S) BLF879P BLF178P BLF278XR BLF578 BLF578XR

Features

`` Best broadband efficiency `` Highest power devices `` Unrivalled ruggedness `` Low-thermal resistance design for reliable operation `` Consistent device performance

NXP Semiconductors RF Manual 15th edition

33

1.6.2 E-metering, RF generic front-end with a single antenna / ZigBee Application diagram

antenna

filter

LNA

filter

mixer

buffer SPDT switch

filter

VCO

MPA

driver

E-METERING CHIP SET

VCO

bra850

Recommended products Function

Product

SPDT Switch

RF diode

Bandswitch diode PIN diode

Function

Product

RF transistor

SiGe:C transistor

Package SOD523 SOD323 various various

Type BA277 BA591 BAP51^ BAP1321^

Function

Package

Function

SOT343R SOT343R SOT891

Type BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGA2001 BGA2003 BGU7003

Package

Type

SOT343

BFG425W

SOT363 SOT363 SOT363

BGA2031/1 BGA2771 BGA2776

SOT343F

LNA

MMIC

Function

Product RF bipolar transistor

Driver MMIC

Low noise wideband ampl. SiGe:C MMIC

Wideband transistor Amplifier Gen. purpose wideband ampl.

Mixer

Buffer

Function

Medium power amplifier

Function VCO

Product RF bipolar transistor

Wideband transistor

MMIC

Linear mixer

Product RF bipolar transistor

Wideband transistor

Product RF bipolar transistor

Wideband transistor

MMIC

Product Varicap diodes

Gen. purpose wideband ampl.

VCO varicap diodes

Package SOT343 SOT343 SOT343 SOT363

Type BFG410W BFG425W BFG480W BGA2022

Package SOT23 SOT323 SOT323 SOT416

Type PBR951 PRF957 PRF947 PRF949

Package

Type

SOT343

BFG21W

SOT908 SOT908

BGA6289 BGA6489 BGA6589 BGA7124 BGA7127

Package SOD523 SOD323

Type BB198 BB156

SOT89

^ = also available in ultra small leadless package SOD882D.

Product highlight: BGA7127 MMIC medium power amplifier The BGA7127 MMIC is a one-stage driver amplifier, offered in a low-cost, ultra small SOT908 leadless package. It delivers 27 dBm output power at 1 dB gain compression and superior performance for various narrowband-tuned application circuits at frequencies up to 2700 MHz. 34

NXP Semiconductors RF Manual 15th edition

Features

`` Operating range: 400 to 2700 MHz `` 16 dB small signal gain at 2 GHz `` 27 dBm output power at 1 dB gain compression `` Integrated active biasing `` 3.3 / 5 V single supply operation `` Simple quiescent current adjustment `` 1 μA shutdown mode

1.6.3 RF Microwave furnace application Application diagram

oscillator

MPA

Products by application

antenna

HPA

isolator

CONTROLLER

brb418

Recommended products Function

Product

Package SOT343R

RF transistor

Oscillator

SOT343F

Function

Product

Driver HPA Final

Function

Product

fmin (MHz)

fmax (MHz)

P1dB (W)

Package

Type

1 1 1 2400 2400 2400 2400 2400 2400

2500 2500 2500 2500 2500 2500 2500 2500 2500

4 10 12 20 140 180 200 250 250

SOT1179 SOT1179 SOT975B SOT1138 SOT1179 SOT539 SOT502 SOT539 SOT1179

BLP25M74 BLP25M710 BLF25M612 BLM2425M720 BLP2425M8140 BLF2425M6L(S)180P BLF2425M7L(S)200 BLF2425M7L(S)250P BLP2425M8250P

Package SOT89

MPA (medium power amplifier)

MMIC

Type BFG410W BFG424W BFG425W BFG424F BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F

SOT908 SOT89 SOT908 SOT89 SOT908

Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130*

* = check status at 3.1 new products, as this type has not been released for mass production.

Product highlight: New family for ISM 2.45 GHz NXP's 6th and 7th generation LDMOS technology, along with advanced packaging concepts, enables power amplifiers that deliver best-in-class performance at 2.45 GHz. The unsurpassed ruggedness and low thermal resistance, along with the intrinsic efficiency of the LDMOS process, make these transistors ideally suited for the furnace application.

Features

`` Excellent ruggedness `` Consistent device performance `` Low thermal resistance design for unrivalled reliability `` Ease of design

NXP Semiconductors RF Manual 15th edition

35

1.6.4 RF plasma lighting Looking for more information on RF plasma lighting? See chapter 2.5.2 RF-driven plasma lighting: The next revolution in light sources are powered by solid-state RF technology

Application diagram

RF (plasma) bulb

oscillator

MPA

HPA

CONTROLLER

brb436

Recommended products Function

Product

RF transistor

Oscillator

Function

Product

Package SOT143 SOT143 SOT23 SOT323 SOT323 SOT323 SOT343 SOT343 SOT363 SOT416

Type BFG520 BFG325/XR BFR520 BFR92AW BFR93AW BFS520 BFG520W BFG325W/XR BFM520 BFR520T

Package

Type BGA6289 BGA6489 BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130*

SOT89 MPA (medium power amplifier)

SOT908 SOT89 SOT908 SOT89 SOT908

MMIC

* = check status at 3.1 new products, as this type has not been released for mass production. Function

Product Driver

Final

Driver HPA

Final Driver

Final

fmin (MHz)

fmax (MHz)

P1dB (W)

Package

Type

10 10 10 10 10 10 10 10 10 10 10 10 2400 2400 2400 2400 2400

500 500 500 500 500 500 1000 1000 1000 1000 2500 2500 2500 2500 2500 2500 2500

20 300 500 500 1000 1000 10 100 120 300 4 12 140 180 200 250 250

SOT467C SOT502A SOT539A SOT1240 SOT539A SOT539A SOT1179 SOT467C SOT1138 SOT1138 SOT1179 SOT975B SOT1179 SOT502 SOT502 SOT539 SOT1179

BLF571 BLF573(S) BLF574 BLF278XR BLF578 BLF578XR BLP10H610 BLF871(S) BLP10H6120 BLP10H6300P BLP25M74 BLF25M612 BLP2425M8140 BLF2425M7L(S)180 BLF2425M7L(S)200 BLF2425M7L(S)250P BLP2425M8250P

Product highlight: LDMOS enables RF lighting NXP's 50 V high voltage LDMOS process enables highest power at the unprecedented ruggedness levels necessary for this kind of application. BLF578: 1000 W CW operation - highest power LDMOS

36

NXP Semiconductors RF Manual 15th edition

Features

`` Highest power device `` Unprecedented ruggedness `` Low-thermal resistance design for reliable operation `` Consistent device performance `` Broadband device for flexible use

1.6.5 Medical imaging Looking for more information on medical applications? See chapter 2.5.1 Medical applications driven by RF power: From imaging to cancer treatment, a flexible and versatile technology in the doctor’s toolbox

Products by application

Application diagram

Magnet X GRADIENT AMPLIFIER

Gradient coils RF coils

Y GRADIENT AMPLIFIER

WAVEFORM GENERATOR

Z GRADIENT AMPLIFIER

RF amplifier

RF ELECTRONICS

ADC

COMPUTER IMAGE DISPLAY brb434

Recommended products Function

Product Driver

Final

Driver HPA

Final Driver

Final

fmin (MHz)

fmax (MHz)

P1dB (W)

Package

Type

10 10 10 10 10 10 10 10 10 10 10 10 2400 2400 2400 2400 2400

500 500 500 500 500 500 1000 1000 1000 1000 2500 2500 2500 2500 2500 2500 2500

20 300 500 500 1000 1000 10 100 120 300 4 12 140 180 200 250 250

SOT467C SOT502A SOT539A SOT1240 SOT539A SOT539A SOT1179 SOT467C SOT1138 SOT1138 SOT1179 SOT975B SOT1179 SOT502 SOT502 SOT539 SOT1179

BLF571 BLF573(S) BLF574 BLF278XR BLF578 BLF578XR BLP10H610 BLF871(S) BLP10H6120 BLP10H6300P BLP25M74 BLF25M612 BLP2425M8140 BLF2425M7L(S)180 BLF2425M7L(S)200 BLF2425M7L(S)250P BLP2425M8250P

Product highlight: LDMOS in emerging medical applications NXP’s line of 50 V high voltage LDMOS devices enables highest power output and features unequalled ruggedness for pulsed operation in MRI and NMR applications. The high power densities enable compact amplifier design.

Features

`` Best broadband efficiency `` Highest power (density) devices `` Unrivalled ruggedness `` Consistent device performance

NXP Semiconductors RF Manual 15th edition

37

1.7 Aerospace and defense 1.7.1 Microwave products for avionics, L- and S-band radar applications

Application diagram

RF signals

video, timing, bias voltage, control and data I-f signals RF small signal RF POWER BOARD

RF power PLL VCO

MPA

mixer

HPA

ISOLATOR

ANTENNA DRIVE

VGA

local oscillator

duplexer

DISPLAY AND CONTROL

local oscillator signal

WAVEFORM GENERATOR

PLL VCO

control and timing video

mixer

DETECTOR LNA

IF amplifier

brb410

Recommended products Function

Product Driver

Final

Driver

Final HPA Driver

Final

38

fmin (MHz)

fmax (MHz)

P1dB (W)

Package

Applications

Type

1030 1030 1030 1030 960 1030 960 1030 960 500 1200 500 1200 1200 1200 2700 3100 2700 2900 2700 3100 2700 2900 2900 2700 3100 2900 2700

1090 1090 1090 1090 1215 1090 1215 1090 1215 1400 1400 1400 1400 1400 1400 3100 3500 3500 3300 3100 3500 3100 3300 3300 2900 3500 3300 3100

2 10 200 200 250 300 500 600 1000 25 35 130 250 250 500 6 20 30 100 120 120 130 130 150 350 350 200 200

SOT538A SOT467C SOT502A SOT502A SOT502A SOT957A SOT634A SOT539A SOT539A3 SOT467C SOT467C SOT1135 SOT502A SOT502 SOT539A SOT975C SOT608 SOT1135 SOT502A SOT502 SOT502 SOT922-1 SOT922-1 SOT922-1 SOT539 SOT539 pallet pallet

Avionics Avionics Avionics Avionics Avionics Avionics Avionics Avionics Avionics L-band L-band L-band L-band L-band L-band S-band S-band S-band S-band S-band S-band S-band S-band S-band S-band S-band S-band S-band

BLA1011-2 BLA1011-10 BLA6G1011-200R BLA6G1011LS-200RG BLA0912-250R BLA1011-300 BLA6H0912-500 BLA6H1011-600 BLA6H0912-1000 BLL6H0514-25 BLL1214-35 BLL6H0514L(S)-130 BLL6G1214L-250 BLL6H1214L(S)-250 BLL6H1214-500 BLS6G2731-6G BLS6G3135(S)-20 BLS6G2735L(S)-30 BLS2933-100 BLS6G2731(S)-120 BLS6G3135(S)-120 BLS6G2731S-130 BLS6G2933S-130 BLS7G2933S-150 BLS7G2729L(S)-350P BLS7G3135L(S)-350P BLS6G2933P-200 BLS6G2731P-200

NXP Semiconductors RF Manual 15th edition

Function Discrete attenuator

Product RF diode

PIN diode

Package

Type

Various^

BAP64

Function LNA (low noise amplifier) & Mixer Function

Product RF transistor

SiGe:C transistor

Product

Package

Type

SOT343F

BFU710F BFU725F/N1 BFU730F

Package

Type

SOT363

BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGM1014 BGM1013 BGM1012

MMIC IF amplifier

MMIC General purpose wideband amplifiers

Function PLL/VCO LO generator

Product RF IC

Function Single VGA (variable gain amplifier)

Product

Function Dual VGA (variable gain amplifier)

Product

Function

Product

MPA (medium power amplifier)

MMIC

MMIC

MMIC

SiGe:C IC

Gain range 23 dB 31 dB

Package

Type

SOT616

TFF1003HN TFF1007HN TFF11xxxHN^

Package SOT617

Gain range 24 dB 28 dB

Package

PL (1 dB) @ 940 MHz 21 dBm 25 dBm 24 dBm 28 dBm 28 dBm 30 dBm

Package SOT89 SOT908 SOT89 SOT908 SOT89 SOT908

SOT617

Products by application

^ = SOD523, SOD323, SOT23 & SOT323

Type BGA7202 BGA7204 Type BGA7350 BGA7351 Type BGA6589 BGA7124 BGA7024 BGA7127 BGA7027 BGA7130*

^ = 17 different types with LO ranges: 7-15 GHz, see 3.4.4

Product highlight: NXP launches high quality pallets for S-band The BLS6G2933P-200 is the first LDMOS-based, industry-standard pallet available on the market. This pallet offers more than 40% efficiency, includes the complete bias network and can be used as direct replacement for current solutions.

Features

`` P1 dB > 200 W `` Efficiency > 40% `` Industry-standard footprint `` 50 Ω in/out matched for entire bandwidth `` Lightweight heat sink included

NXP Semiconductors RF Manual 15th edition

39

2. Focus applications, products & technologies 2.1 Wireless communication infrastructure 2.1.1

VGAs with superior linearity for enhanced system performance

NXP variable gain amplifiers BGA7202/4, BGA7350/1 Manufactured in NXP’s innovative QUBiC4 process, these VGAs deliver more on-chip functionality in less space, and meet the most demanding requirements for system performance. Key features `` BGA720x: transmit VGAs - Frequency band: 700 to 2200 or 2750 MHz - Gain range: 23 or 31.5 dB - OIP3: +36 dBm/110 mA (BGA7202), +41 dBm/520 mA (BGA7204) @ minimum attenuation `` BGA735x: dual receive IF VGAs - Frequency band: 50 to 250 MHz - Gain range: 24 or 28 dB - OIP3: +44 dBm/245 mA or higher @ minimum attenuation - Gain flatness: 0.1 dB - Differential phase error: 0.1 degrees `` Best-in-class linearity (OIP3) at low power consumption `` ESD protection > 2 kV HBM and > 1.5 kV CDM on all pins `` HVQFN32 leadless packages (5 x 5 mm)

The BGA7202 and BGA7204 are RF VGAs used in the transmit path. The BGA7202 offers an output third-order intercept (OIP3) of +45 dBm and 27 dB of attenuation. The attenuation is controlled by means of an analog interface.

Key applications `` Wireless infrastructure base stations `` Multi-carrier systems

The BGA7350 has a gain range of 24 dB, while the BGA7351 has a range of 28 dB. For both devices, the maximum gain setting delivers 18 dBm output power at 1 dB gain compression (P1dB), with superior linear performance and overdrive performance up to +20 dBm. For gain control, each amplifier uses a separate digital gain-control code, which is provided externally through two sets of five bits. The resulting gain flatness is 0.1 dB.

These high performance variable gain amplifiers (VGAs) support multiple frequency bands and the latest air interfaces. They offer best-in-class linearity, very low power consumption, high immunity to out-of-band signals, spurious performance, and output power. They are ideally suited for GSM, W-CDMA, WiMAX, LTE base-station infrastructure, and multi-carrier systems.

40

NXP Semiconductors RF Manual 15th edition

The BGA7204 provides an OIP3 of +37 dBm and 32 dB of attenuation. The attenuation is controlled by means of a digital interface. In addition, the gain curve of the BGA7204 can be programmed via an SPI interface. The BGA7350 and BGA7351 are dual, independently controlled receive IF VGAs that operate from 50 to 250 MHz. Integrated matching improves performance in the receiver chain, because the VGA can drive the filter directly into the analog-to-digital converter to ensure a constant input level.

Other features All four devices are RoHS-compatible and available in space-saving HVQFN32 leadless packages that measure just 5 x 5 mm. They are unconditionally stable devices that offer ESD protection at all pins and meet moisture sensitivity level 1.

Complete signal chain NXP is one of the very few companies that supplies products for the complete signal chain – from analog mixed-signal components such as ADCs and DACs to RF small signal devices and high-power RF amplifiers. This system-level approach allows engineers to purchase products that work well together as part of the overall system design, and makes it easier for designers to optimize performance in today's wireless infrastructure. Furthermore, since NXP has in-house access to all the core IP, the company is positioned to support even higher levels of integration in the future.

Selection guide Gain

Vsup

Isup

Frequency (MHz)

Type

Package

Control interface

(V)

(mA)

BGA7202

SOT617

Analog

5

530

BGA7204

SOT617

Parallel, serial, digital

5

110

range

@ minimum attenuation

@ maximum attenuation

Gain

OIP3

NF

Gain

OIP3

NF

(dB)

(dB)

(dBm)

(dB)

(dB)

(dBm)

(dB)

700 to 1450

23

23

41

7

0

30

30

1450 to 2200

23

23

41

7

0

30

30

700 to 1450

31.5

18

38

6.5

-13.5

10

38

1450 to 2100

30.5

17

36

6.5

-13.5

10

38

2100 to 2750

29.5

16

34

7.5

-13.5

10

38

BGA7350

SOT617

Parallel, digital

5

245

50 to 250

24

18.5

44

6

-5.5

50

30

BGA7351

SOT618

Parallel, digital

5

250

50 to 250

28

22

45

6

-6

50

34

NXP Semiconductors RF Manual 15th edition

41

Focus applications, products & technologies

State-of-the-art QUBiC4 NXP’s industry-leading QUBiC4 technology, available since 2002, has been widely deployed in the field and offers more consistent parameter performance compared to GaAs technology. It speeds the migration from GaAs to silicon and delivers more functionality in less space. High integration reduces the design footprint and enables more cost competitive designs. It also improves reliability and offers significant savings in manufacturing expenditures.

2.1.2

Doherty amplifier technology for state-of-the-art wireless infrastructure

Best-in-class PA designs enable considerable energy savings NXP’s latest power amplifier designs let the wireless infrastructure run with significantly higher energy efficiency – towards “Green Base Stations”. In order to achieve the highest efficiencies currently possible, NXP combines its latest generations of LDMOS technology (Gen7 & 8) with the Doherty concept. The high performance of our LDMOS technology, matched with the efficiency of the Doherty technology, creates power amplifiers that offer high efficiency, high gain, are easily linearizable, and are more cost-effective to operate. Developed by W.H. Doherty in 1936, the Doherty amplifier remained largely unused because the dominant mobile communication system modulation techniques (FM, GMSK, and EDGE) did not require high peak-toaverage ratio (PAR) signals. For today's base stations, however, transmitting 3G, 4G, and multi-carrier signals makes the high power and added efficiency of the Doherty approach the preferred option for most service providers. NXP’s Doherty designs ensure high efficiency while maintaining a very similar peak power capability of two transistors combined. The input and output sections are internally matched, benefiting the amplifiers with high gain, good gain flatness, and phase linearity over a wide frequency band. Integrated Doherty NXP can even offer the world’s first fully integrated Doherty designs. From the outside these devices look like ordinary transistors. In fact, they are completely integrated Doherty amplifiers that readily deliver the associated high efficiency levels for base station applications. With the ease of design-in of an ordinary Class AB transistor, they also provide significant space and cost savings.

42

NXP Semiconductors RF Manual 15th edition

Key features & benefits `` Contains splitter, main and peak amplifier, delay lines, and combiner in one package - 40% efficiency @ 10 W average power - no additional tuning in manufacturing `` Design is as easy as with a single Class AB transistor `` Ideally suited for space-constrained applications (e.g. remote radio heads, antenna arrays) `` Currently available for TD-SCDMA (BLD6G21L(S)-50) and W-CDMA (BLD22L(S)-50); see chapter 3.7.1.4 for details

Key features & benefits `` Most efficient Doherty amplifier designs available to date `` Production-proven, consistent designs `` NXP’s LDMOS provides unsurpassed ruggedness `` Currently available for the following frequency bands: - 728 to 821 MHz - 869 to 960 MHz - 1805 to 1880 MHz (DCS) - 1930 to 1990 MHz (PCS) - 1880 to 2025 MHz (TD-SCDMA) - 2110 to 2170 MHz (UMTS / LTE) - 2300 to 2400 MHz (WiBRO / LTE) - 2500 to 2700 MHz (WiMAX / LTE) - 3300 to 3800 MHz (WiMAX)

Focus applications, products & technologies

Discrete Doherty amplifiers In addition to the integrated versions, NXP offers product demonstrators for very efficient, high-power, discrete two- and three-way Doherty amplifiers. The two-way designs, based on the BLF7G22LS-130 device, deliver 47.0 dBm (50 W) with 43% efficiency and 15.7 dB gain for W-CDMA applications.

All of our product demonstrators are supported by comprehensive documentation and hardware. Please see chapter 3.7.1.7 for a complete list of available designs. Our flagship three-way Doherty demonstrator even achieves 48% efficiency at 48 dBm (63 W) average output power and 15.0 dB gain with a two-carrier W-CDMA signal. The current design covers the W-CDMA standard for band 1 operation and is tailored towards high-yield, minimum-tuning, volume manufacturing.

Featured Doherty designs Freq band (MHz)

PPEAK (dBm)

POUT-AVG (dBm)

VDS (V)

Gain (dB)

Drain Eff. (%)

Type

Main transistor

Peak transistor

728-768

58

50

32

20.5

47

SYM

BLF6G10LS-200RN

BLF6G10LS-200RN

920-960

57.3

49.3

30

16

50

ASYM

BLF8G10LS-160

BLF7G10LS-250

1476-1511

58.1

49.6

28

16

42

ASYM

BLF7G15LS-200

BLF7G15LS-300P

1805-1880

58.6

51

28

16

47.6

3-WAY

BLF7G20LS-200

2x BLF7G20LS-200

1930-1990

58.2

50

28

16

40

SYM

BLF7G20LS-250P

BLF7G20LS-250P

2110-2170

47

39

28

13

38

SYM

BLD6G22L(S)-50

BLD6G22L(S)-50

2110-2170

57.2

49.2

28

16

47

3-WAY

BLF7G22LS-160

2x BLF7G22L(S)-160

2300-2400

55

47.5

28

15.2

44

ASYM

BLF7G24LS-100

BLF7G24LS-140

2500-2700

50.3

42.3

28

14.5

39

SYM

1/2 BLF7G27LS-90P

1/2 BLF7G27LS-90P

3400-3600

51

43

28

11.5

32

SYM

BLF6G38-50

BLF6G38-50

NXP Semiconductors RF Manual 15th edition

43

2.1.3

The new generation of LDMOS RF power for wireless infrastructures: NXP's Gen8

NXP recently announced the 8th generation of its renowned RF power device portfolio for base stations. Listening carefully to the world’s leading infrastructure providers and understanding their requirements, a holistic approach was taken during the development of Gen8. This basically means that we scrutinized every little detail of a power transistor and reconsidered the entire “transistor system” to come up with a new generation, which performs markedly better than its predecessors and again sets standards for the industry. Gen8 clearly addresses the key trends in the wireless infrastructure industry `` Increasing signal bandwidths up to 100 MHz `` Cost sensitivity `` Reduction in the size/weight/volume of the cabinet `` Continuous need for greater electrical efficiency to reduce cooling requirements and operational expenditure `` Ever increasing output power to unprecedented levels `` Need to deploy multi-standard and future-proof solutions Gen8 is the answer to all these often conflicting requirements. The package and die design, as well as input and output match structures, have been optimized to enable wideband, affordable, compact, multi-standard and highly efficient Doherty power amplifiers. The first wave of Gen8 transistors is deployed for applications up to 960 MHz with excellent linearization capabilities, stateof-the-art ruggedness and efficiencies in excess of 55% for multicarrier GSM PAs. The second wave of products covers WCDMA-LTE applications at 2.1 GHz. Solutions for all other cellular frequency bands are currently being developed.

The first wave of Gen8 transistors Function

Type BLF8G10L-160

HPA

44

fmin (MHz)

fmax (MHz)

P1dB (W)

Package

Planned release

700

1000

160

SOT502A

Q311

Gen8 ceramic LDMOS transistor for GSM & LTE applications

Q112

Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications

SOT539A

Description

BLF8G10L-300P

700

1000

300

BLF8G10L-320

700

1000

320

SOT502A

Q112

Gen8 ceramic LDMOS transistor for GSM & LTE applications

BLF8G10L-80

700

1000

80

SOT502A3

Q411

Gen8 ceramic LDMOS transistor for GSM & LTE applications

BLF8G10LS-160

700

1000

160

SOT502B3

Q311

Gen8 ceramic LDMOS transistor for GSM & LTE applications

BLF8G10LS-300P

700

1000

300

SOT539B

Q112

Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications

BLF8G10LS-320

700

1000

320

SOT502B3

Q112

Gen8 ceramic LDMOS transistor for GSM & LTE applications

BLF8G10LS-80

700

1000

80

SOT502B

Q411

Gen8 ceramic LDMOS transistor for GSM & LTE applications

NXP Semiconductors RF Manual 15th edition

2.2 Broadband communication infrastructure 2.2.1

Connecting people, protecting your network : NXP's CATV C-family for the Chinese SARFT standard

Specially designed for the Chinese Hybrid Fiber Coax (HFC) infrastructure, NXP's CATV C-family offers you a total solution for cable TV networks. It is both flexible enough for connecting rural communities as part of China’s "Connecting every village" program and powerful enough for upgrading major cities from analog to Film and Television (SARFT) standard, and cover most HFC applications in the 550 MHz to 1 GHz range. Products `` BGY588C, BGE788C and CGY888C push-pull amplifiers `` BGD712C, CGD944C, CGD942C, CGD982HCi, CGD985HCi and CGD987HCi power doublers `` BGO807C, BGO807CE optical receivers Benefits `` Compliant with Chinese SARFT HFC networks standard `` Transparent cap allows confirmation of product authenticity `` Rugged construction `` Highest by Design internal ESD protection Features `` Excellent linearity, stability and reliability `` High power gain `` Extremely low noise `` Silicon nitride passivity `` GaAs HFET dies for high end devices

The BGY588C, BGE788C and BGD712C devices cover the frequency range from 550 MHz to 750 MHz. Extending the C-family portfolio into the high-end segment, the CGD944C, CGD942C, CGY888C and BGO807C operate between 40 MHz and 870 MHz and have been specifically tested under Chinese raster conditions. Manufactured using our GaAs HFET die process, the CGD942C and CGD944C are high-gain, high-performance 870 MHz power doublers. The CGD982HCi, CGD985HCi and CGD987HCi operate from 40 MHz to 1003 MHz and are specified for 870 MHz and 1 GHz. These power doublers are optimized for the Chinese SARFT standard. They are capable of satisfying the demanding requirements of top-end applications including high-power optical nodes. Our GaAs HFET MMIC dies are providing by design the best ESD protection levels with no needs for the external TVS components normally used with GaAs pHEMT devices.

Further extending our high quality CATV portfolio, this new family lets you address an even wider range of HFC applications. Dedicated solutions for the implementation of CATV systems in China, our C-type devices deliver the performance you need for modern TV infrastructures.

All CATV C-type devices feature a transparent cap that makes it easy to distinguish them from counterfeit products.

C-family application information NXP C-family by application Application

BGY588C

BGE788C

CGY888C

BGD712C

BGO807C

CGD942C

BGO807CE

CGD944C

CGD982HCi CGD985HCi CGD987HCi

Optical node

•

•

•

•

Ordinary optical receiver

•

•

•

•

Distribution amplifier

•

•

•

•

Line extender amplifier

•

•

•

•

Terminating amplifier

•

•

• NXP Semiconductors RF Manual 15th edition

45

Focus applications, products & technologies

high-end digital services. All C-type devices are compliant with the Chinese State Administration for Radio,

BGY588C, BGE788C and CGY888C The last stage of an HFC network structure is called IN port

a ‘terminating amplifier‘ or ‘user amplifier’ as it is close to the subscribers. Each terminating amplifier requires a single

PAD

OUT port

EQ

BGY588C BGE788C CGY888C

module such as BGY588C for 550 MHz, BGE788C for 750 MHz and CGY888C for 870 MHz systems. These modules are fitting

bra820

perfectly in the Chinese "Connecting to Every Village" projects.

BGD712C The BGD712C is a 750 MHz, 18 dB power doubler module. It has been designed for 750 MHz optical nodes including

IN port

PAD

BGY785A BGY787

ordinary or optical receivers and distribution amplifiers. It can also be used in line extender amplifiers together with

OUT port

EQ

BGD712C

bra821

a 750 MHz push-pull module, such as BGY785A or BGY787. As such it can be used widely in Chinese "Connecting to Every Village" projects.

CGD944C and CGD942C Our full GaAs power doublers modules, CGD942C and CGD944C offer high output power and better CTB and CSO than other modules. Designed for high-end HFC networks containing optical nodes with multiple out-ports, these modules enable each port to directly cover at least 125 subscribers. These two devices are ideal when used in upgrading HFC networks to 870 MHz.

CGD94xC / CGD98xHCi PAD

CGD94xC / CGD98xHCi PAD

BGO807C The BGO807C is an integrated optical receiver module that provides high output levels and includes an integrated temperature compensated circuitry. In your optical node design, BGO807C enables a high performance / price ratio and ruggedness. When upgrading an HFC network from analog to digital, our BGO807C is the perfect fit.

EQ

PAD BGO807C BGO807CE

CGD982HCi, CGD985HCi and CGD987HCi Our newest GaAs power doubler modules, CGD982HCi, CGD985HCi and CGD987HCi are customized designs for CATV hybrid fiber coax Chinese networks operating in the 40 MHz to 1003 MHz bandwidth, and specified with the Chinese cable TV network official loading raster on top of the NTSC loading traditional rasters. For use in optical notes for fiber deep applications where the output power level needs to be at its highest.

OUT port 1

H L

(N + 1)

OUT port 2

H L

CGD94xC / CGD98xHCi PAD

RF switch

OUT port 3

H L

CGD94xC / CGD98xHCi PAD

BGO807C BGO807CE

OUT port 4

H L

bra822

BGD812 PAD PAD

BGO807C BGO807CE

EQ

BGY885A

H L

OUT port 1

H L

OUT port 2

BGD812 PAD

bra823

46

NXP Semiconductors RF Manual 15th edition

Connecting people, protecting your network NXP CATV C-family for the Chinese SARFT standard Push-pull amplifiers BGY588C

Power gain (dB)

BGE788C

CGY888C

typ.

34.5

34.2

35.5

Slope cable equivalent (dB)

range

0.2 - 1.7

0.3 - 2.3

1.5 typ.

Composite triple beat (dB)

max.

-57

-49

-68 typ.

Composite 2nd order distortion (dB)

max.

-62

-52

-66 typ.

Noise (@ f max) (dB)

max.

8

8

4 typ.

Total current consumption (mA)

typ.

325

305

280

range

40 - 550

40 - 750

40 - 870

Frequency range (MHz)

Focus applications, products & technologies

Parameters

Power doublers Parameters

BGD712C

Power gain (dB)

CGD942C

CGD944C

CGD982HCi

CGD985HCi

CGD987HCi

typ.

18.5

23

25

23

24.5

27

Slope cable equivalent (dB)

range

0.5 - 1.5

1-2

1-2

0.5 - 2

0.5 - 2

0.7 - 2

Composite triple beat (dB)

max.

-62

-66 typ.

-66 typ.

-66

-66

-66

Composite 2 order distortion (dB)

max.

-63

-66 typ.

-66 typ.

-69

-69

-66

Noise (@ f max) (dB)

max.

7

5

5

5.5

5.5

5.5

Total current consumption (mA)

typ.

395

450

450

440

440

440

range

40 - 750

40 - 870

40 - 870

40 - 1003

40 - 1003

40 - 1003

BGO807C

BGO807CE

min.

800

800

nd

Frequency range (MHz)

Optical receiver Parameters Responsivity (Rmin) Slope cable equivalent (dB)

range

0-2

0-2

Composite triple beat (dB)

max.

-71

-69

Composite 2nd order distortion (dB)

typ.

-54

-53

Noise (@ f max) (dB)

max.

8.5

8.5

Total current consumption (mA)

typ.

190

190

range

40 - 870

40 - 870

Frequency range (MHz) Connector

- / SC0 / FC0

NXP Semiconductors RF Manual 15th edition

47

2.2.2

Highly efficient line-up of 1 GHz GaAs modules for sustainable CATV networks

NXP high gain power doublers CGD104xHi and push-pulls CGY104x Designed for 1 GHz “sustainable networks,” these high performance GaAs devices enable extended bandwidth and higher data rates. They deliver increased network capacity and make way for highend services like HDTV, VoIP, and digital simulcasting.

New CATV GaAs platform lay-out

Key features `` Excellent linearity, stability, and reliability `` High power gain for power doublers `` Extremely low noise `` Dark Green products `` GaAs HFET dies for high-end applications `` Rugged construction `` Superior levels of ESD protection `` Integrated ringwave protection `` Design optimized for digital channel loading `` Temperature compensated gain response `` Optimized heat management `` Excellent temperature resistance Key benefits `` Simple upgrade to 1-GHz capable networks `` Low total cost of ownership `` High power-stress capability `` Highly automated assembly Key applications `` Hybrid Fiber Coax (HFC) applications `` Line extenders `` Trunk amplifiers `` Fiber deep-optical-node (N+0/1/2) `` Bridgers

48

NXP Semiconductors RF Manual 15th edition

The NXP power doublers CGD104xH and CGD104xHi are ideal for use in line extenders and trunk amplifiers. They support fiber deep-optical-node applications (N+0/1/2), delivering the highest output power on the market today. The GaAs HFET die process delivers high gain, excellent CTB and CSO ratings, along with lower current. The new NXP CGY1047x push-pull family is the first line-up on the market combining very low noise, best-in-class distortion parameters, and low, “carbon footprint” capabilities. It delivers the best performance for the lowest power consumption, so it reduces OPEX and CO2 emissions All of NXP’s 1 GHz solutions are designed for durability and offer superior ruggedness, an extended temperature range, high power overstress capabilities, and extremely high ESD levels. As a result, they also reduce the cost of ownership. The GaAs die is inserted in an HVQFN package that is then mounted on thermal vias that manage heat transfer to the heat sink. Temperature-control circuitry keeps the modules high performance stable over a wide range of temperature. Assembly is fully automated and requires almost no human intervention, so repeatability remains very high.

Upcoming products Additional push-pulls, currently under development, will extend the capabilities of the power doublers even further, supporting almost all modern HFC applications. The push-pull CGY1041 will deliver a gain of 21 dB, the CGY1043 a gain of 23 dB, the CGY1049 a gain of 29 dB and the CGY1032 a gain of

32 dB. NXP is also developing a new, highly integrated power doubler. The CGD1046Hi will deliver, in one IC, a 26 dB power gain with 60 dBmV output power and excellent ESD protection, for the ultimate in high quality, distortionless devices.

Quick reference data CATV 1 GHz power doublers and push-pulls CATV 1- GHz power doublers CGD1040Hi

CGD1042H

21

23

CGD1042Hi

CGD1044H

23

Power gain (dB)

typ.

Slope cable equivalent (dB)

typ.

1.5

1.5

1.5

Composite triple beat (dB)

typ.

-69

-69

-69

CGD1044Hi

25

CGD1046Hi

25

27

1

1.5

0.5 - 2.0

-69

-69

-73

Composite 2 order distortion (dB)

typ.

-68

-68

-68

-68

-68

-68

Noise (@fmax) (dB)

max

6

6

6

6

6

5

Total current consumption (mA)

typ.

Frequency range (MHz)

range

nd

440

450

440

450

440

460

40 - 1003

40 - 1003

40 - 1003

40 - 1003

40 - 1003

40 - 1003

CGY1041

CGY1043

CGY1047

CGY1049

CGY1032

Focus applications, products & technologies

Parameters

CATV 1-GHz push-pulls Parameters Power gain (dB)

typ.

22

24

28

30

33

Slope cable equivalent (dB)

typ.

2

2

2

1.6

1.8

Composite triple beat (dB)

typ.

-62

-62

-64

-62

-62

Composite 2nd order distortion (dB)

typ.

-64

-64

-66

-64

-64

Noise (@fmax) (dB)

max.

5

5

4.5

5

5

Total current consumption (mA)

typ.

250

250

250

250

265

Frequency range (MHz)

range

40 - 1003

40 - 1003

40 - 1003

40 - 1003

40 - 1003

CGD104xHi PAD

H L

OUT port 1

H L

OUT port 2

H L

OUT port 3

H L

OUT port 4

CGD104xHi PAD PAD

(N + 1)

RF switch

EQ

CGD104xHi PAD

CGD104xHi PAD

bra822

An optical node with multiple out-ports using the CGD1040Hi / CGD1042Hi / CGD1044Hi / CGD1046Hi NXP Semiconductors RF Manual 15th edition

49

2.3 TV and satellite 2.3.1

LNAs for TV/STB tuners with programmable gain

NXP LNAs for STBs BGU703x for 5 V and BGU704x for 3.3 V supply voltage This family of 5 V and 3.3 V wideband, low noise amplifiers is specifically designed for high linearity, low noise performance for TV, DVR/PVR, set-top box tuner applications from 40 MHz to 1 GHz. The unique is programmable gain compensates for tuner switch signal loss, which is becoming more important following the trend of more tuners in one system, and improves overall system performance with 7-10 dB. Key features `` Equipped with internal bias `` Programmable gain and bypass modes `` Flat gain between 40 MHz and 1 GHz `` Noise figure = 4 dB `` High linearity: IP3O = 29 dBm `` 75 Ω input and output impedance `` Power-down during bypass mode (current consumption < 5 mA) `` ESD protection > 2 kV human body model (HBM) on all pins Key applications `` Terrestrial and cable STBs `` Silicon and can tuners `` Personal and digital video recorders (PVRs, DVRs) `` Home networking and in-house signal distribution `` FM radios `` Antenna amplifiers In set-top boxes that use multiple or network-interfaced module (NIM) tuners, the RF signal usually needs to be distributed or split. Very often, a low noise amplifier (LNA) is used to compensate for signal loss when the signal is split with a balun core. The NXP BGU703x/BGU704x are LNA MMICs produced in an SiGe:C process. All five products in the series are matched to 75 Ω at both the input and the output, for easier use. The BGU703x are suitable for supply voltages of 5 Volts and the BGU704x for 3.3 Volts. The BGU7031 and BGU7041 are LNAs with fixed gain. The BGU7032 and BGU7042 have an additional bypass mode. The BGU7033 has two gain levels (GP = 10 dB or 5 dB) and the bypass mode.

50

NXP Semiconductors RF Manual 15th edition

All five devices are designed for high linearity and low noise over a frequency range of 40 MHz to 1 GHz. They can be used in conventional can tuners or with silicon tuner ICs. Compared to GaAs solutions, they are less susceptible to ESD and offer a cost savings of more than 50 percent. Integrated biasing and switching functions reduce the number of external components from roughly 17 to just two or three. By comparison, a discrete LNA design would typically require six to nine external components and, to realize the bypass function, would need an extra four pin diodes and at least eight additional passive components. Each MMIC in the BGU703x/BGU704x are housed in a 6-pin SOT363 (SMD) package. Each offers a flat gain between 40 MHz and 1 GHz, so there’s no gain fluctuation over the typical frequency range. The low noise figure of 4 dB reduces overall tuner noise, and the high linearity (IP3O = 29 dBm) minimizes distortion. The input and output impedance is adapted to the application (75 Ω), so there’s no need for external matching. To save power, the ICs can be powered-down during bypass mode, for a total current consumption of less than 5 mA. Also, to protect the LNA from external electrical discharge in its function as the tuner input, every pin is equipped with ESD protection of >2 kV human body model (HBM).

LNAs for set-up boxes (75 Ω) Package

Gain (1)

NF

PL (1dB)

OIP3

FL (2)

RLout

RLin

(mA)

(dB)

(dB)

(dBm)

(dBm)

(dB)

(dB)

(dB)

5

43

10

4.5

14

29

-0.2

12

18

5

43

5

6

9

29

-0.2

12

17

Bypass

5

4

-2

2.5

-

29

-0.2

8

8

GP 10 dB

5

43

10

4.5

14

29

-0.2

12

18

Bypass

5

4

-2

2.5

-

29

-0.2

8

8

GP 10 dB

5

43

10

4.5

14

29

-0.2

12

18

GP 10 dB

3.3

38

10

4

12

29

-0.2

12

21

Bypass

3.3

3

-2

2.5

-

29

-0.2

10

10

GP 10 dB

3.3

38

10

4

12

29

-0.2

12

21

Mode

VCC

ICC

(V) GP 10 dB GP 5 dB

(MHz) BGU7033

BGU7032

SOT363

SOT363

40 - 1000

40 - 1000

BGU7031

SOT363

40 - 1000

BGU7042

SOT363

40 - 1000

BGU7041

SOT363

40 - 1000

Focus applications, products & technologies

Type

@

Frequency range

Notes: (1) Gain = Programmable gain (GP) (2) Flatness of frequency response = FL

Block diagram of active splitter with passive loop-through

RF input

BGU703x/BGU704x VGA

surge

CONVENTIONAL TUNER OR SILICON TUNER

RF SW BF1108 or BF1118 brb403

RF output WB LNA BGU7031/BGU7041 (optional)

NXP Semiconductors RF Manual 15th edition

51

2.3.2

Complete satellite portfolio for all LNB architectures

NXP Satellite LNB devices TFF101xHN, BFU710F/730F, and BGA28xx Designed for use in LNAs, mixers, and IF amplifiers, these robust, small-footprint products are the latest additions to NXP's leading portfolio for satellite LNB architectures. They are manufactured in NXP’s groundbreaking QUBiC4X SiGe:C and QUBiC4+ process technology. Fully integrated Ku-band downconverters TFF101xHN The TFF101xHN is a family of fully integrated downconverters for Ku-band LNBs. They give the best RF performance in terms of phase noise, gain, and noise figure at the lowest current consumption in the market. Ku-band downconverter TFF101xHN/N1 for LNB `` Typical application: Universal Single LNB & Twin LNB `` Ultra-low current consumption: 54 mA over PVT `` Only 7 external components `` No inductors `` Single supply domain: 5 V `` Uses low-cost fundamental 25 MHz crystal `` High PL1dBo = 3 dBm / 3OIPo = 13 dBm `` Best-in-class PN < 1.8 deg RMS - 10 kHz to 13 MHz integration bandwidth `` Multiple gain types available - TFF1014HN/N1 36 dB - TFF1015HN/N1 39 dB - TFF1017HN/N1 42 dB - TFF1018HN/N1 45 dB `` Flat gain over frequency (< 2 dBpp) `` Input & output matched 50 Ω `` Small leadless DHVQFN16 package (2.5 x 3.5 x 0.85 mm) RF transistors BFU710F/730F The BFU710F and BFU730F are wideband RF transistors that can be used as an LNA or as a mixer for a DBS LNB in the Ku-band. In either application, they deliver good noise and linearity, a higher gain at a lower current consumption compared to their GaAs pHEMT equivalents, and the cost advantage of silicon. BFU710F as LNA in Ku-band LNB `` Typical application: LNA2 for single output LNB `` Overall similar RF performance to GaAs pHemt LNAs `` Power consumption: 3.5 mA `` Single supply: 3/5/6 V `` High RF gain: 13.5 dB `` Low noise figure: 1.6 dB `` Linearity (OIP3): 12 dBm

52

NXP Semiconductors RF Manual 15th edition

BFU710F as mixer in Ku-band LNB `` Typical application: Active mixer for single output LNB `` Single supply 3/5/6 V `` Low power consumption: 2.5 mA `` LO drive < 0 dBm `` SSB noise figure < 8 dB (including BPF at the input) `` SSB conversion gain > 5 dB (including BPF at the input) `` Linearity (OIP3) > 0 dBm `` LO-RF isolation min 20 dB `` RF match better than 10 dB `` IF match better than 8 dB BFU730F as LNA in Ku-band LNB `` Typical application: LNA2 and LNA3 for multiple output LNB `` Overall similar RF performance to GaAs pHemt LNAs `` Power consumption: 11 mA `` Single supply 3/5/6 V `` Very high RF gain: 11.5 dB `` Low noise figure: 1.25 dB `` Linearity (OIP3) > 17 dBm `` Return loss > 10 dB MMICs BGA28xx as IF amplifiers (1st stage & output stage) For compatibility with existing designs, the series uses market standard packages: the SOT363 and the pin-compliant SOT363F. The pinning is identical to NXP’s current gain block family, and the blocks deliver similar noise figures. New features include flatter gain, a positive gain slope, improved P1dB vs Icc, and no necessity for an output inductor. `` Internally matched at 50 Ω `` Gain slope > 0.5 dB `` Single supply voltage: 3.3 or 5 V

`` Reverse isolation: > 30 dB up to 2 GHz `` Best-in-class power vs current consumption `` Noise figure: 4 to 6 dB at 1 GHz `` Unconditionally stable (K > 1) `` High-compression-point models work without output inductor `` 6-pin SOT363 plastic SMD package

Since the ICs, transistors, and the MMICs are manufactured in NXP’s industry-leading QUBiC4X SiGe:C and QUBiC4+ process, they offer better overall RF performance and are more robust than their GaAs equivalents with the cost advantage of silicon. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured. Focus applications, products & technologies

These products – the integrated downconverters TFF101xHN, the wideband transistors BFU710F/730F for LNA and mixer functionality, and the BGA28xx series of IF MMICs – are the most recent additions to NXP’s leading portfolio for

satellite LNB. They join the other discrete products, including oscillators, amplifiers, and switches, to provide complete coverage for all LNB architectures.

Satellite outdoor unit, LNB for multiple users horizontal 1st antenna stage LNA

2nd stage LNA

3rd stage LNA

mixer

H low IF amplifier

oscillator

low mixer BIAS IC

V low mixer

(4 x 2) IF SWITCH

IF amplifier H high

IF amplifier

IF out 1

IF amplifier

vertical antenna

high

oscillator

IF amplifier

V high 1st stage LNA

2nd stage LNA

3rd stage LNA

mixer

IF amplifier

IF out 2

brb022

NOTE: Also look at chapter 1.4.4 satellite outdoor unit.

Fully integrated mixer / oscillator / downconverter

LB/HB/H/V detection pHemt bias LO oscillator control linear regulated 5 V BIAS

V/T LIN HB

Hor 2nd 10.7 ~ 12.75 GHz

BPF

1st Ver

• 0.95 ~ 1.9 GHz/ ® 1.1 ~ 2.15 GHz

mixer

IF amps

BFU710F 25.000 MHz

¬ DC 13 (H) or 18 (V) ¬ 0 or 22 kHz

PLL/VCO

TFF101xHN LOOP FILTER

001aan954

NXP Semiconductors RF Manual 15th edition

53

2.3.3

VSAT, 2-way communication via satellite

Design a Ku-/ Ka-band VSAT transceiver that meets IESS-308 with NXP's Ku-/ Ka-band RF LO generators The TFF100xHN family are Ku-band RF PLLs, with integrated VCO intended for low phase-noise localoscillator (LO) circuits in Ku- & Ka-band VSAT transmitters and transceivers. Manufactured in a high performance SiGe:C process, these devices deliver extremely low phase noise and comply with the IESS-308 from Intelsat.

VSAT networks are commonly used to transmit narrowband data, such as point-of-sale transactions for credit cards, or to transmit broadband data that supports satellite Internet access to a remote location, VoIP, or video. The network typically consists of a dish antenna, an outdoor unit, and an indoor unit. The outdoor unit is used for frequency translation between RF and IF, and usually includes a microwave-based uplink/downlink separator, a low noise block (LNB) for receiving the downlink signals, and a block Upconverter (BUC). The VSAT ICs can be used to create the LO generator for a linear BUC (meaning the IF or RF conversion is done by mixing with an LO). Features `` Phase noise compliant with IESS-308 (Intelsat) `` Differential input and output `` Divider settings at 16, 32, 64, 128 or 256 `` Lock-detect output `` SiGe:C technology (120 GHz fT process) `` HVQFN24 (SOT616-1) package Applications `` VSAT block upconverters `` VSAT down conversion `` Local oscillator signal generation

To enable precise frequency and time multiplexing, the downlink signal provides an accurate frequency reference of 10 MHz. The indoor unit frequency multiplexes this with the uplink IF signal, and the LO signal in the BUC needs to be frequencylocked to the reference. The TFF100xHN ICs are housed in a 24-pin HVQFN (SOT616-1) package. The pins have been assigned for optimal performance. Three voltage domains are used to separate the block on the IC, and two pins for each output (OUT-P and OUT-N) have been reserved to match a typical layout using a linewidth of Z = 50 Ω microstrip on a 20-mil RO4003 board (1.1 mm). The ground pins have been placed next to the reference input and the output, and, to minimize crossings in the application, all the supply pins are on the same side of the IC.

54

NXP Semiconductors RF Manual 15th edition

Satellite

HUB

Focus applications, products & technologies

VSATs

Typical VSAT network

mixer

synchronized QPSK data on L-band carrier in the range 0.95~1.45 GHz (extended range: 0.95~1.7 GHz) from indoor unit

13.05 GHz settings (12.8 GHz settings) 10 MHz

/64 (/48)

PFD

LF

PFD

solid state power amp

amp

12.8~13.05 on-chip VCO

203.90625 (200) MHz

band pass filter

LF band pass filter

156.25 kHz (208.83 kHz) /1305 (/960)

/64 TFF1003HN

cleanup PLL build around VCXO narrow bandwidth

203.90625 (200) MHz > 13.05 (12.8) GHz TFF1003 @ DIV = 64 PLL with on-chip VCO

brb200

Complete LO generator for linear BUC with TFF1003HN

Type

Package

fIN(REF)

VCC

ICC Typ

PLL phase noise @ N=64 @ 100 kHz Max

PLL fo(RF)

Output buffer

Input

Po

RLout(RF)

Si

Typ

Max

Min

(MHz)

(V)

(mA)

(dBc/Hz)

(GHz)

(dBm)

(dB)

(dBm)

TFF1003HN

SOT616

50 - 815

3.3

100

-92

12.8 - 13.05

-5

-10

-10

TFF1007HN

SOT616

228.78 - 234.38

3.3

130

-104

14.62 - 15

-3

-10

-10

TFF1008HN

SOT616

220.91 - 225.2

3.3

130

-104

14.1 - 14.4

-3

-10

-10

NXP Semiconductors RF Manual 15th edition

55

2.3.4

Low noise LO generators for microwave & mmWave radios

NXP LO generators (integrated VCO/PLL) TFF11xxxHN Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators are low-power and low-spurious solutions that simplify design-in and lower the total cost of ownership. These low noise local-oscillator (LO) generators, optimized for use in many different microwave applications between 7 and 15 GHz, deliver highly accurate performance in a small footprint. They require no alignment or frequency modification on the production line, so they simplify manufacturing. High integration saves board space and makes design-in easier, for lower overall cost and faster development.

Features `` TFF11xxxHN family: lowest-noise LO generators for a full family in 7 to 15 GHz range `` Maximum power consumption for all types is 330 mW (typ) `` Phase-noise compliant with IESS-308 (Intelsat) `` Proven QUBiC4X SiGe:C technology (120 GHz fT process) `` External loop filter `` Differential input and output `` Lock-detect output `` Internally stabilized voltage reference for loop filter `` 24-pin HVQFN (SOT616-1) package Applications : TFF11xxxHN family `` Industrial/medical test and measurement equipment `` Electronic warfare (EW) `` Electronic countermeasures (ECM) `` Point-to-point `` Point-to-multipoint `` Satellite communication/VSAT `` Radar systems

Since these ICs are manufactured in NXP’s industry-leading QUBiC4X SiGe:C process, they offer better overall RF performance, are more robust than their GaAs equivalents, and consume much less power. The process technology also enables higher integration, for added features. NXP owns the industrial base for production (wafer fab, test, assembly), so volume supplies can be assured. The TFF1003HN is the basis for the entire family of LO generators. It has VCO coverage of 12.8 to 13.05 GHz and accepts input signals from 50 to 816 MHz. The divider can be set for 16, 32, 64, 128, or 256, and the output level is -5 dBm with a stability of ±2 dB. The family of LO generators is completed by a range of 18 different devices operating in a center frequency ranging from 7 to 15 GHz. The RF performance of all these devices is consistent with the TFF1003HN. All the LO generators have low power dissipation (330 mW typ), and all are available in a space-saving 24-pin HVQFN package.

Full portfolio overview of low noise LO generators for general microwave applications at chapter 3.4.4

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NXP Semiconductors RF Manual 15th edition

2.4 Portable devices 2.4.1

QUBiC4X SiGe:C LNAs for GPS, GloNass and Galileo with AEC-Q100 qualification

NXP's GPS low noise amplifiers offer the best reception of weak signals because of dynamic suppression of strong cellular and WLAN transmit signals. Moreover, as only two external components are required,

Key features & benefits `` Low noise figure of 0.9 dB and choice of system-optimized gain of 16.5 or 18.5 dB, allowing for the best GPS reception `` Adaptive biasing dynamically suppresses strong cellular and WLAN transmit signals, further optimizing GPS reception `` Only 2 external components and 1.45 x 1.0 mm package size, enabling the smallest footprint and lowest external component cost `` AEC-Q100 qualification (BGU7004, BGU7008), meaning highest reliability under harsh conditions Key applications `` Smart phones `` Feature phones

Adaptive biasing GPS signal power levels are weak and below the noise floor at -155 dBm. Moreover, in many consumer products such as smart phones, inter-modulation and harmonics caused by strong transmitters such as WLAN, can drive the GPS LNA into compression. With adaptive biasing, increasing output power from jammers is immediately detected, and current is temporarily increased. Adaptive biasing dynamically suppresses jammers, maintaining optimal GPS signal reception for as long as possible.

Focus applications, products & technologies

designers can save up to 50% in PCB size and 10% in component cost.

Power

GPS Signal

`` Tablets `` Personal navigation devices (PND) `` Digital still camera (DSC) `` Digital video camera (DVC) `` RF front end modules (used in phones) `` Complete GPS chipset modules (used in DSC) `` Automotive applications (BGU7004/8): toll collection, emergency call `` Theft protection (laptop, ATM)

GPS band

Output power Input power Freq. Jammer: GSM 1850

1575 MHz

Gain vs. jammer power for NXP GPS LNA adaptive biasing vs Competitor.

1

Gain [dB]

(Pin 1575 MHz = -45 dBm, jammer at 1850 MHz). 22 21 20 19 18 17 16 15 14 13 12 -80

-70

-60

-50

-40

-30

-20

-10

0

P_Jammer at input DUT [dBm]

NXP Semiconductors RF Manual 15th edition

57

Smallest footprint Type

MMIC *

Package size

Package

mm

X

Y

Pins

Pitch Area

mm

mm

#

mm

SMD's Appl.

SMD size X

Y

SMD's area

Appl. area mm2

mm2

#

mm

mm

mm2

BGU7005/7

SOT886

1.45 x 1

1.7

1.25

6

0.5

2.13

2

1.5

0.8

2.4

4.53

Competitor

Wafer level package

1.26 x 0.86

1.5

1.1

6

0.4

1.65

6

1.5

0.8

7.2

8.85

Competitor

Wafer level package

0.86 x 0.86

1.1

1.1

4

0.4

1.21

4

1.5

0.8

4.8

6.01

Competitor

Thin small leadless package

2 x 1.3

2.25

1.55

6

0.5

3.49

4

1.5

0.8

4.8

8.29

Competitor

Thin small leadless package

1.4 x 1.26

1.65

1.5

6

0.48

2.48

4

1.5

0.8

4.8

7.28

Competitor

Thin small outline non-leaded

1.5 x 1.5

1.75

1.75

6

0.5

3.06

5

1.5

0.8

6

9.06

* Incl. keep out area on pcb (common used assembly rule)

Selection guide

Type

@ 1.575 GHz Supply voltage

Supply current

Insertion power gain

Noise figure

Input power at 1 dB gain compression

Input third-order intercept point f1 = 1713 MHz, f2 = 1851 MHz

Vcc

Icc

|s21|2

NF

PL(1dB)

IP3i

(V)

(mA)

(dB)

(dB)

Package

Vcc = 1.8 V, Min

Vcc = 1.8 V, Typ

Vcc = 2.5 V, Icc = 5 mA

Vcc = 2.85 V, Min

Vcc = 2.85 V, Typ

Min

Max

Min

Typ

Max

Min

2.2

2.85

3

-

15

16

18.3

20

0.8

-

-

-20

-

-

-

-

0

-

-

BGU7004^

SOT886

1.5

2.85

-

4.5

-

-

16.5*

-

0.9

-14

-11

-

-11

-8

5

9

-

5

12

BGU7005

SOT886

1.5

2.85

-

4.5

-

-

16.5*

-

0.9

-14

-11

-

-11

-8

5

9

-

5

12

BGU7007

SOT886

1.5

2.85

-

4.8

-

-

18.5**

-

0.9

-15

-12

-

-14

-11

1

4

-

2

5

BGU7008^

SOT886

1.5

2.85

-

4.8

-

-

18.5**

-

0.9

-15

-12

-

-14

-11

1

4

-

2

5

NXP Semiconductors RF Manual 15th edition

Typ

Vcc = 1.8 V, Typ

Vcc = 2.85 V, Typ

SOT891

58

Max

Vcc = 1.8 V, Min

(dBm) Vcc = 2.85 V, Min

BGU7003

^ = AEC-Q101 qualified (some limitations apply) * = 16.5 dB without jammer / 17.5 dB with jammer ** = 18.5 dB without jammer / 19.5 dB with jammer

Typ

(dBm) Vcc = 2.5 V, Icc = 5 mA

2.5 Industrial, scientific & medical 2.5.1

Medical applications driven by RF power: From imaging to cancer treatment, a flexible and versatile technology in the doctor’s toolbox

RF technology is making its way into all kinds of medical applications, ranging from the well-known imaging techniques (MRI, EPRI) over low frequency, external heat treatment, and electro-surgical tools, to minimally invasive endoscopic cancer treatment (RF ablation). One clear trend is the increasing share of RF-based technologies for ablation. Another is the achieve higher spatial resolution, better control, and shorter treatment times.

RF radiation is not a new technology in medicine. It is currently used for imaging purposes in MRI (magnetic resonance imaging) and EPRI (electron paramagnetic resonance imaging), techniques that employ frequencies from a few megahertz to about 500 MHz. Other well-known external heat-treatments to rejuvenate skin or relieve muscle pain make use of frequencies around 480 kHz – not too demanding in terms of RF. Surgical equipment to cut and simultaneously coagulate blood vessels runs off RF at about 5 MHz. The latter application belongs to a class of treatment techniques that is growing rapidly and uses RF radiation to deposit energy locally at various parts of the body – in general to “ablate” (remove) unwanted tissue. Inside the body, the RF energy heats the surrounding tissue until it is desiccated and/or necrotized. The damaged tissue will later be re-absorbed by the surrounding, living tissue. Further application examples for RF ablation include cancer treatment in the lung, kidney, breast, bone and liver, removal of varicose veins, treatment of heart arrhythmia, and a growing list of other applications that benefit from the high control and feedback possible with RF. Another advantage of RF in this context is the fact that it can be applied via small catheters ending in antennas that deploy the RF signal. Unlike older, direct-current techniques, the tissue is heated only very locally around the antenna. Neighboring nerves (and the heart) are not stimulated. This led to the development of a variety of specialized catheters, used during minimally invasive surgery, along with ultrasound or X-ray imaging to determine the exact location of the RF-active part. During the treatment, the impedance of the surrounding tissue can be monitored and the end-point determined. With proper catheters, one can even achieve “self limitation” due to the reduced uptake of RF energy in desiccated tissue. Likewise, the RF frequency can be used to tune the energy deposition zone around the catheter: the higher the frequency, the smaller the penetration depth – and hence the volume to deposit the RF energy – in the watery tissue. With the trend towards higher RF frequencies and powers, the complexity of RF generators and the requirements for the device technology also increase. Above 10 MHz, say, up to 3.8 GHz, the technology of choice for power amplifiers is Si LDMOS (laterally

diffused metal oxide semiconductor). This technology has proven to be powerful, efficient, and rugged in base stations, radar systems, broadcast transmitters, and other industrial, scientific, and medical (ISM) applications. LDMOS is available from up to 50 V supply to achieve power levels up to 1,200 W per single device, with outstanding ruggedness and high gain and efficiency. To drive and control the LDMOS power amplifier stages, it takes voltage-controlled oscillators, phase locked loops, and medium power amplifiers. These parts of the RF signal chain are conveniently available based on reliable and high volume SiGe:C (QUBiC) semiconductor technologies. Going a step further, one can even use high-speed converters to drive the signal chain entirely from the digital domain, for full and easy control over the shape and modulation of the applied RF. RF implications These in-situ medical applications and, in general, most of the ISM applications, usually form highly mismatched RF loads during some part of the usage cycle. This in turn means that, without protection or other measures, all of the "injected" RF power reflects back into the final stage of the amplifier and needs to be dissipated in the transistor(s), and most likely destroys the device(s) if this situation lasts too long. LDMOS transistors are designed to be extremely rugged and generally withstand these mismatch situations without degrading over time. This device ruggedness, or the ability to withstand “harsh” RF conditions in general, be it mismatch or extremely short pulse rise and fall times, is essential for reliable device performance. RF power companies have gone to great lengths to achieve best-in-class device ruggedness. The technologies have been hardened under the most stringent ruggedness tests during development, which is particularly true for the 50 V technology. Among other factors, the base resistance of the parasitic bipolar and the drain extension of the LDMOS device play key roles in this respect. This ruggedness, combined with the power density and the high efficiencies achievable, make LDMOS the preferred technology for RF power amplifiers up to 3.8 GHz. NXP Semiconductors RF Manual 15th edition

59

Focus applications, products & technologies

trend towards higher RF frequencies (several GHz) and higher powers (> 100 W) in order to

2.5.2 RF-driven plasma lighting: The next revolution in light sources are powered by solid-state RF technology Recent developments in RF power technology, such as improved cost structure, ruggedness. and power levels of up to 1200 W per device, have enabled a breakthrough light source technology, called ‘RF plasma lighting’. All RF plasma lighting sources make use of a small, electrode-less quartz lightbulb that contains argon gas and metal halide mixtures. The bulb is powered by direct RF radiation, which ignites the gas mixtures to create and power a bright plasma, the color of which can be tuned by the composition of its constituents. This technology works without any additional electrodes in the bulb, unlike standard high-intensity discharge lamps. No electrodes means very long operating lifetimes, since the contamination and wire erosion that lead to decreased efficiency and eventual lamp failure are precluded. The RF light source lives up to 50,000 hrs when it reaches 50% of its original light output. Typical high-intensity discharge lamps, by comparison, achieve 20,000 hrs operating life. Another strong point of the plasma light is its efficiency: 1 W of RF power is converted to 130-140 lm of light. This leads to very compact, very bright lamps that easily emit 10,000 to 20,000 lm of white light with a close-to-sunlight color rendition. The key enabler for the RF light source is RF technology, based on Si LDMOS RF power transistors. LDMOS technology operating at 28 V is the leading RF power technology for cellular base stations or broadcast transmitters as final amplifier stages in the frequency range between a few MHz up to 3.8 GHz. Recently, another LDMOS format, 50 V LDMOS, has emerged for use in broadcast, ISM, defense and avionics applications. It combines high power density to achieve power levels up to 1,200 W per single device and outstanding ruggedness, with high gain and efficiency at frequencies of up to 1.5 GHz. Comparison of lighting technologies The table below summarizes currently available technologies that generate bright light with varying degrees of efficiency. It lists a few key parameters, including lifetime, luminous flux, efficacy, color rendition index, color temperature, start-up time, and re-strike time (time to start after switch-off from normal operation).

Color Start-up Re-strike Lifetime Luminous Efficacy Color flux temperature time time (lm/W) rendering (hrs) (klm) (K) (s) (s) Incandescent 2,000 1,700 10 to 17 100 3200 0.1 0.1 Fluorescent 10,500 3,000 115 51 to 76 2940 to 6430 0.3 0.1 LED 25,000 130 60 to 100 30 6000 0.1 0.1 Type

HID (highintensity discharge)

20,000

25,000

65 to 115

40 to 94

4000 to 5400

60

480

RF plasma

50,000

25,000

100 to140

70 to 94

4000 to 5500

30

25

Table 1: Comparison of light-generation. Note: numbers are only valid for a qualitative comparison. Source: www.wikipedia.org and references therein. 60

NXP Semiconductors RF Manual 15th edition

The plasma light source is among the brightest and most efficient available to date and boasts a very long life time. Important to note is the high brightness per bulb: much brighter than LEDs, for example. Consequently, it takes multiple LEDs to generate the light output of a single plasma light source. Hence, LED luminaries for street lighting will be considerably larger than those for plasma light sources. RF implications The RF plasma lighting sources can operate at a wide range of RF frequencies, but initial applications typically focus at frequencies of around a few hundred megahertz. At these frequencies both the 28 and 50 V LDMOS technologies can be used, yielding high efficiency values of 70% to more than 80% and low-heat dissipation making compact plasma lamp designs possible. The RF-driven plasma light is a perfect example of novel applications that can be powered by RF energy in the industrial, scientific, and medical (ISM) realm. Established technologies use RF to pump a gas discharge in a laser cavity. These "gas discharge" applications and in general, most of the ISM applications, typically form highly mismatched RF loads during some part of the usage cycle. In the case of gas discharges, for example, the gas cavity acts as an "open circuit" during switch-on. This in turn means that without protection or other measures, all of the "injected" RF power reflected back into the final stage of the amplifier needs to be dissipated in the transistor(s) right there and most likely destroys the device(s) if this situation lasts too long. After the discharge strikes, the load impedance reverts to "matched," eventually, and the transistor sees an acceptable load. Obviously, these mismatched conditions occur every time the plasma is "switched on,” exerting strain on the finals. LDMOS transistors are designed to be extremely rugged and generally withstand these mismatch situations without degrading over time. This ruggedness, combined with the high power density and efficiency achievable, make LDMOS the preferred technology for RF lighting and other equally demanding applications in the ISM realm.

2.5.3

QUBiC4 Si and SiGe:C transistors for any RF function

NXP's 6th (Si) and 7th (SiGe:C) generation RF transistors offer the best RF noise figure versus gain performance at 12 GHz , drawing the lowest current. This performance allows for better signal reception at low power and enables RF receivers to operate more robustly in noisy environments. This family of 6th (Si) and 7th (SiGe:C) generation RF transistors can be used in most RF applications as low noise amplifiers (BFUx10F, BFUx30F, BFU725/N1), high linearity and high output amplifiers (BFUx60F, BFUx90F), buffer

Key features & benefits `` 40 / 110 GHz transition frequency allows for applications up to 18 GHz and beyond. `` From low noise figure of 1.45 dB and high gain of 13.5 dB at 12 GHz to high linearity of 34dBm (OIP3) at 1.8 GHz, gives a broad choice of parts for the perfect fit for each application. `` Consuming only 3 mA to generate 13.5 dB gain at 12 GHz `` Plastic surface-mount SOT343F package for high performance and easy manufacturing

Focus applications, products & technologies

amplifiers, mixers, and oscillators. Demo boards and application notes `` Single-stage Ku-band LNA using BFU730F `` Single-stage 2.3-2.7 GHz LNA with BFU730F `` Single-stage 5-6 GHz WLAN LNA with BFU730F `` 1st stage SDARS LNA with BFU730F `` 2nd stage SDARS LNA with BFU690F

Key applications `` 2nd and 3rd LNA stage and mixer stage in DBS LNBs `` Ka- / Ku-band DROs `` Satellite radio (SDARS) LNA `` C-band / X-band high-output buffer amplifier `` AMR `` WLAN / WiFi `` ZigBee `` Bluetooth `` FM radio `` GPS `` LTE, cellular, UMTS `` Mobile TV `` RKE `` High linearity applications `` Low current, battery-equipped systems `` Low noise amplifiers for microwave communications systems `` Medium output power applications `` Microwave driver / buffer applications

Full portfolio overview of 6th and 7th generation RF wideband transistors at chapter 3.3.1

NXP Semiconductors RF Manual 15th edition

61

2.5.4

Building on decades of innovation in microwave and radar

NXP builds on more than 50 years of history in semiconductor technology and component design. For more than three decades we have led in providing high performance RF technologies for microwave applications. The company has built a strong position in the field of RF small signal and power transistors for microwave amplifiers with best-in-class Si devices and processing technologies. We were the first semiconductor company to supply S-band transistors (2700 to 3500 MHz) based on laterally diffused metal-oxide-silicon (LDMOS). To further strengthen our position towards the future, we are currently developing new high power and high-bandwidth technologies based on gallium nitride (GaN) material. Another enabling technology is NXP’s BICMOS process QUBiC, which is available in several variants with fT up to 200 GHz, each specialized to address specific small signal RF applications. The product portfolio encompasses: - Low noise amplifiers (LNAs) - Variable gain amplifiers (VGAs) - Mixers - Local oscillators (LOs) - LO generators NXP now also focuses on architectural breakthroughs and has developed highly integrated products for microwave and millimeter wave. One example is a family of LO generators from 7 GHz to 15 GHz with integrated PLL and VCO. Another example is an integrated RF power module in S-band (3.1-3.5 GHz) at 200 W. RF small signal product highlight: Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology, these highly integrated, alignment-free LO generators TFF1xxxHN are low-power, low-spurious solutions that simplify design-in and lower the total cost of ownership.

62

NXP Semiconductors RF Manual 15th edition

Features `` Lowest noise LO generators for 7 to 15 GHz range `` Maximum power consumption for all types, typical 330 mW `` Phase-noise compliant with IESS-308 (Intelsat) `` Proven QUBiC4X SiGe:C technology (120 GHz fT process) `` External loop filter `` Differential input and output `` Lock-detect output `` Internally stabilized voltage reference for loop filter RF power product highlight The BLS6G2933P-200 is the first LDMOS-based, industrystandard pallet produced by NXP. This pallet offers more than 40% efficiency and includes the complete bias network for S-band applications.

Microwave applications and bands of operation System

Frequency

VHF and UHF

40% `` Industry-standard footprint `` 50 Ω in/out matched for entire bandwidth `` Lightweight heat sink included `` The advantages of LDMOS in comparison with Bipolar - Higher gain and better efficiency - Better ruggedness – overdrive without risk to 5 dB - Improved pulse droop and insertion phase - Consistent performance – no tuning required - Improved thermal characteristics – no thermal runaway - Non-toxic packaging and RoHS-compliance

9300 - 9500 MHz

For a complete list of products, see the respective small signal and power microwave pages

NXP Semiconductors RF Manual 15th edition

63

2.5.5

Digital broadcasting at its best

The BLF881 / BLF888A transistor line-up enables today’s most powerful and efficient digital broadcast transmitter applications. BLF881 This transistor is based on NXP’s 50 V LDMOS technology and features 120 W RF output power for broadcast transmitter and industrial applications. An unmatched device, the BLF881 can be used in the HF to 1 GHz range. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications – either on its own or as a driver in combination with the high power transistor BLF888A. The BLF881 is also available in an earless version, the BLF881S, which enables an even more compact PCB design.

Key features and benefits `` Excellent efficiency and reliability `` Highest power levels in the market `` Best-in-class ruggedness designed into all devices `` Best broadband performance `` Easy power control `` Best-in-class design support `` Low thermal resistance design for unrivalled reliability `` Advanced flange material for optimum thermal behavior and reliability `` Designed for broadband operation (470 to 860 MHz) Key applications `` Analogue and digital TV transmitters

BLF888A Running from a 50 V supply voltage, the BLF888A is a 600 W LDMOS RF power transistor for broadcast transmitter and industrial applications. Being a matched device, BLF888A is optimized for digital signal broadcasting and can deliver 120 W average DVB-T output power over the full UHF band from 470 MHz to 860 MHz with 20 dB power gain and 31% drain efficiency. The excellent ruggedness of this transistor (it withstands a VSWR in excess of 40:1) makes it the ultimate choice as final stage for digital transmitter applications – ideally accompanied by a BLF881 as the driver. This device is also available as an earless package, denoted BLF888AS, to enable surface mount assembly processes and take optimum advantage of the very low thermal resistance package.

typ. 0.5 kW DVB-T Driver stages

8× final

TV exciter DVB-T

harmonic filter power monitor

typ. 5 kW DVB-T output power

amplifiers

Function Driver

Final

64

Type

fmin (MHz)

fmax (MHz)

CW - P1dB (W)

VDS (V)

brb339

DVB-T PL (W)

DVB-T η D (%)

DVB-T Gp (dB)

Package SOT467C

BLF642

1

1400

35

32

7

33

20

BLF881(S)

1

1000

140

50

30

31

21

SOT467C

BLF884P

470

860

350

50

70

32

20

SOT539A

BLF888A(S)

470

860

600

50

120

31

21

SOT539

BLF879P

470

860

450

42

90

31

20

SOT539A

NXP Semiconductors RF Manual 15th edition

2.5.6

Broadband medium power amplifiers for all 400 to 2700 MHz applications

NXP medium power MMICs BGA7xxx for broadband applications Produced in NXP’s proven QUBiC4 Si BiCMOS process, these MMICs bring improved thermal performance

Features `` ESD protection at all pins `` Single-supply operation (3.3 or 5 V) `` Integrated active biasing `` Fast shutdown `` Quiescent current adjustment `` Two package options, smallest leadless package (3 x 3 mm) and leaded SOT-89

Base station The high power level of these MMICs makes them an excellent choice for mobile infrastructure applications. They offer the highest gain over all base stations frequencies. The quiescent current feature allows for high efficiency and linearity in Class AB operation. The bias circuitry delivers stable performance over temperature and supply variations. The integrated shutdown function is a power-saving feature and can be used for fast shutdown. The MMICs can be tuned for any band between VHF and 2.7 GHz. Unbeatable thermal performance (30 °C/W) improves overall quality and reliability.

Applications `` Wireless infrastructure (base station, repeater) `` eMetering `` Broadband CPE (MoCA) `` Satellite Master Antenna TV (SMATV) `` Industrial applications `` W-LAN / ISM / RFID

eMetering These MMICs are also very well suited to eMetering applications in the 900-2400 MHz ISM band. High integration and single supply operation mean that the MMICs can be combined with just a few other components to create a full-featured solution. The MMICs can be operated on battery power (with an energy saving shutdown mode) and are tunable between Class A and AB. They can also work on a power line network, so they support gas metering with or without a power connection. The builtin reliability and quality of a silicon-based process provides longevity, as does the improved ESD performance.

Manufactured in NXP’s breakthrough QUBiC4 process, these MMICs deliver RF performance comparable to that of their GaAs equivalents, but at a lower cost and with additional features, like thermal performance and ESD robustness. The QUBiC4 process makes it possible to support even more features, including active biasing, quiescent adjustment, VGA interfaces, and a power saving shutdown mode. To increase design flexibility, all the MMICs support single-supply (3.3/5 V) operation. And, to save space, they are available in the smallest package size (3 x 3 mm) and with leadless options.

Supply

Type

Package

f

Vcc

Shutdown control

Icc

VI(D)L(SHDN)

VI(D)H(SHDN)

II(D)L(SHDN)

RF performance

RF performance

Typ @ f = 940 MHz

Typ @ f = 1960 MHz

Typ

Typ

Max

Min

Max

Min

Max

Typ

Gp

PL(1dB)

OIP3

NF

Gp

PL(1dB)

OIP3

NF

(MHz)

(V)

(mA)

(mA)

(V)

(V)

(V)

(V)

(µA)

dB

dBm

dBm

dB

dB

dBm

dBm

dB

BGA7124

SOT908

leadless

400 - 2700

5

130

200

0

0.7

2.5

Vbias

4

22

25

38

5

16

24

38

5

BGA7024

SOT89

leaded

400 - 2700

5

110

-

-

-

-

-

-

22

24

38

3

16

25

38

4

BGA7127

SOT908

leadless

400 - 2700

5

180

325

0

0.7

2.5

Vbias

4

20

28

44

3

13

28

43

5

BGA7027

SOT89

leaded

400 - 2700

5

170

-

-

-

-

-

-

19

28

41

3

12

28

43

4

BGA7130*

SOT908

leadless

400 - 2700

5

-

-

0

0.7

2.5

Vbias

4

18

30

45

4

12

30

45

4

The specifications of the BGA7130 and BGA7133 are target specifications until development is completed. * = check status at 3.1 new products, as this type has not been released for mass production. NXP Semiconductors RF Manual 15th edition

65

Focus applications, products & technologies

and added-value features to all 400 to 2700 MHz applications − at a lower cost than GaAs versions.

2.6 Technology 2.6.1

Boost efficiency and operational cost in wireless infrastructure with GaN

NXP GaN technology for RF power This new gallium-nitride (GaN) technology, the result of a collaborative development effort, enables highpower amplifiers that deliver very high efficiency in next-generation wireless communication systems. Features `` Power density up to five times higher than Si LDMOS `` 50 V operation `` High gain `` High efficiency `` High reliability `` Low parasitics Benefits `` High frequency combined with high power `` Broadband operation that lets a single power amplifier function at multiple frequencies `` Enabling technology for next-generation, high power, Switch Mode Power Amplifier (SMPA) architectures `` Lowers system costs and operational expenditures `` Ideal for tower-top base stations Applications `` Cellular base stations `` WiMAX `` Broadcast `` Radar Collaborating with United Monolithic Semiconductors and the Fraunhofer Institute for Applied Solid State Physics, NXP has developed a gallium-nitride (GaN) process technology that boosts performance of next-generation RF power amplifiers. The new GaN process, with its high frequency combined with high power, puts NXP in the ideal position to support future applications while continuing to evolve its well-established LDMOS technology. The GaN technology delivers numerous benefits to manufacturers of infrastructure equipment. Using the GaN technology in a transmitter represents a significant cost savings in system operation due to the high efficiencies achievable, along with major improvements in system performance and flexibility. Most of today’s base station power amplifiers are limited to specific applications. The new GaN-based technology creates a “universal transmitter” that can be applied in multiple systems and frequencies. Such universal power amplifier architecture, enabled by NXP’s GaN

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NXP Semiconductors RF Manual 15th edition

technology, simplifies transmitter production and logistics. The technology also allows operators to switch between frequency bands to instantly meet demands in the base station’s coverage area. GaN transistors enable much more efficient power amplifiers and, as a result, drive down the operational costs of telecom operators. GaN transistors can operate at much higher junction temperatures than Si- and GaAs-based devices, so GaN is an ideal candidate for environments with reduced cooling capabilities, such as tower-top base stations. Also, with its high power densities, GaN has the potential to expand into other areas, including high power broadcast applications, where solid-state power amplifiers built with vacuum tubes are still the norm. NXP’s first GaN broadband power amplifiers are expected to be available at the beginning of 2012, with Switch Mode Power Amplifiers (SMPAs) following in subsequent years.

Performance (targets) Saturated output power at 50 V

100 W

Frequency

2.2 GHz

Maximum PAE

68%

Linear power gain

19 dB

2C-WCDMA linear efficiency with DPD

40% at –52 dBc IM3 at 8 dB OPBO

Assembly of GaN power bar in standard ceramic package

2.6.2

Looking for a leader in SiGe:C? You've just found us!

NXP QUBiC4 process technology NXP's innovative, high performance SiGe:C QUBiC4 process lets customers implement more functions into less space, with the added benefits of competitive cost, superb reliability, and significant manufacturing advantages. Our state-of-the-art QUBiC4 technology and extensive IP availability speed the migration from GaAs components to silicon by enabling cutting-edge products with best-in-class low noise performance, linearity, power consumption, immunity to out-of-band signals, spurious performance, and output power. Focus applications, products & technologies

QUBiC is a mature process that has been in mass production since 2002 and has had continuous performance upgrades added ever since. The QUBiC4 process is automotive-qualified and dual-sourced in two high volume, NXP-owned 8-inch waferfabs that provide flexible, low-cost manufacturing with high yields and very low ppm in the field. QUBiC4 in three variants, each having its own benefits for specific application areas: QUBiC4+ The QUBiC4+ BiCMOS process features 0.25 μm CMOS with 5 metal layers for integration of dense digital logic-based smart functionality, a rich set of active and passive devices for high frequency mixed-signal designs including thick top metal layers for high quality inductors. The device set includes a 37 GHz fT NPNs with 3.8 V breakdown voltage (BVce0) and low noise figure (NF < 1.1 @ 2 GHz), 7 GHz fT VPNPs, a 28 GHz high voltage NPN with 5.9 V breakdown voltage, differential and single-ended varicaps with Q-factor > 30, scalable inductors with Q-factor > 20, 800 MHz FT lateral PNP’s, 0.25 μm CMOS, 137, 220 & 12 to 2000 ohm/sq. poly and active resistors, a 270 ohm/sq. SiCr thin film resistor, a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor, 1 to 6 fF/μm2 oxide capacitors and various other devices including L-PNPs, isolated NMOS, 3.3 V CMOS and RF-CMOS transistors capacitor. The QUBiC4+ process is silicon-based and ideal for applications up to 5 GHz (fT = 37 GHz , NF < 1.1 dB @ 1.2 GHz), as well as for medium power amplifiers up to 33 dBm.

QUBiC4Xi The QUBiC4Xi BiCMOS process further enhances the QUBiC4X process and offers an additional features set of devices for high frequency mixed-signal designs, including 180 GHz ft NPNs with 1.4 V breakdown voltage and ultra-low noise figure (NF < 0.7 @ 10 GHz), 0.25 μm CMOS, several resistors, a 5.7 fF/μm2 oxide capacitor and a 5 fF/μm2 MIM capacitor. QUBiC4Xi represents the newest SiGe:C process, with improved on fT (> 200 GHz) and even lower noise figure (NF < 0.5 7 dB @ 10 GHz). It is ideal for applications beyond 30 GHz, such as LO generators.

QUBiC4X The QUBiC4X BiCMOS process is a SiGe:C-based extension of the QUBiC process for high frequency mixed-signal designs and offers a rich set of devices for QUBiC high frequency mixed-signal designs, including a 140 GHz fT NPN with 2.5 V breakdown voltage and very low noise figure (NF < 1.0 @ 10 GHz), 0.25 μm CMOS, a variety of resistors, a 5.7 fF/μm2 oxide capacitor, and a 5 fF/μm2 MIM capacitor. The QUBiC4X is ideal for applications that typically operate at up to 30 GHz (fT = 137 GHz , NF < 0.8 dB @ 10 GHz) and ultralow noise applications such as LNAs and mixers. NXP Semiconductors RF Manual 15th edition

67

SiGe:C

QUBiC4Xi

f / fmax = 180/200 GHz T

SiGe:C

QUBiC4X

fT / fmax = 137/180 GHz

+VPNP +TFR

QUBiC4+

+DG +HVNPN

BiCMOS f /f max = 37/90 GHz

-4ML

QUBiC4+ `` Baseline, 0.25um CMOS, single poly, 5 metal `` Digital gate density 26k gates/mm2 `` fT/fMAX= 37/90 GHz `` +TFR – Thin Film Resistor `` +DG – Dual Gate Oxide MOS `` +HVNPN – High Voltage NPN `` +VPNP – Vertical PNP (high Vearly) `` -4ML – high density 5fF/µm2 MIM capacitor `` Wide range of active and high quality passive devices `` Optimized for up to 5 GHz applications QUBiC4X `` SiGe:C process `` fT/fMAX= 137/180 GHz `` Optimized for up to 30 GHz applications `` Transformers QUBiC4Xi `` SiGe:C process `` Improves fT/fmax up to 180/200 GHz `` Optimized for ultra-low noise for microwave above 30 GHz

Features

QUBiC4+

Release for production CMOS/Bipolar

QUBiC4X

QUBiC4X

2004

2006

2008

CMOS 0.25um, Bipolar 0.4um, Double poly, Deep trench, Si

CMOS 0.25um, Bipolar LV 0.4um, Double poly, Deep trench, SiGe:C

CMOS 0.25um, Bipolar LV 0.3um, Double poly, Deep trench, SiGe:C

LV NPN f T/Fmax (GHz)

37/90 (Si)

137/180 (SiGe:C)

180/200 (SiGe:C)

HV NPN f T/Fmax (GHz)

28/70 (Si)

60/120 (SiGe:C)

tbd (SiGe:C)

NPN BVce0: HV/LV **

5.9 / 3.8 V

3.2 / 2.0 V

2.5 / 1.4 V

7 / >9

planned

planned

2.5 / 3.3 V

2.5 V

2.5 V

V-PNP f T / BVcb0 (GHz / V) CMOS Voltage / Dual Gate Noise figure NPN (dB) RFCMOS f T (GHz)

2 GHz: 1.1

10 GHz: 0.8

10 GHz: 0.5

NMOS 58, PMOS 19

NMOS 58, PMOS 19

NMOS 58, PMOS 19

Isolation (60 dB @ 10 GHz)

STI and DTI

STI and DTI

STI and DTI

Interconnection (AlCu with CMP W Plugs)

5 LM, 3 µm top Metal

5 LM, 3 µm top Metal 2 µm M4

5 LM, 3 µm top Metal

NW, DN, Poly-Poly 5fF/um2 MIM

NW, DN, Poly-Poly 5fF/um2 MIM

NW, DN, Poly-Poly 5fF/um2 MIM

Poly (64/220/330/2K), Active (12, 57), High Precision SiCr (270)

Poly (64/220/330/2K), Active (12, 57), High Precision SiCr (270)

Poly (64/220/330/2K), Active (12, 57), High Precision SiCr (270)

Varicaps (single-ended  & differential)

2x single ended, Q > 40 3x differential, Q 30-50

2x single ended, Q > 40 3x differential, Q 30-50

2x single ended, Q > 40 3x differential, Q 30-50

Inductors  (1.5nH @ 2 GHz) - scalable

Q > 21, Thick Metal, Deep trench isolation, High R substrate

Q > 21, Thick Metal, Deep trench isolation, High R substrate

Q > 21, Thick Metal, Deep trench isolation, High R substrate

Other devices

LPNP, Isolated NMOS

Isolated-NMOS tbd

LPNP, Isolated-NMOS tbd

Mask count

31 / 32 (MIM) / 33 (DG)

35 (MIM)

35 (MIM)

Capacitors Resistors  (Ω/sq)

68

NXP Semiconductors RF Manual 15th edition

2.6.3

Completing NXP's RF power transistor offering: products in plastic packages (OMP)

NXP is currently developing a complete line of overmolded plastic (OMP) RF power transistors and MMICs with peak powers ranging from 3 to 500 W. The main benefit of plastic packages is cost effectiveness with little or no impact on performance. The range of plastic devices will complement the extensive range of RF power products that NXP

The products in development include `` Single-stage broadband drivers in HSOP-outlines, from 3 to 10 W `` Single-stage OMP drivers from 25 to 45 W, replacing their ceramic equivalents for cost sensitive applications `` Dual-stage MMICs from 30 to 60 W that can be used as high-gain drivers or combined as low power dual-stage Doherty amplifiers `` Fully integrated plug-and-play Doherty PAs in a single package (50 to 100 W)

Function

Some of these products are available for sampling now, while the rest of the portfolio will be rolled out throughout 2011.

fmin (MHz)

fmax (MHz)

P1dB (W)

Package

Planned release

BLP05H6100P

1

500

100

SOT1138

Q112

Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications

BLP05H6500P

1

500

500

SOT1138

Q411

Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications

BLP05H650P

1

500

50

SOT1138

Q112

Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications

BLP09H620

700

960

20

SOT1138

Q112

Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications

BLP10H6120

700

1000

120

SOT1138

Q411

Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications

Type

Description

BLP10H6120P

700

1000

120

SOT1138

Q411

Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications

BLP10H6300P

700

1000

300

SOT1138

Q411

Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications

1

1000

3, 5, 10

SOT1179

Q311

Gen6 high-voltage OMP LDMOS driver transistor family for broadcast/ISM applications

1200

1500

100

SOT1138

Q112

Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 OMP LDMOS transistor for broadcast/ISM applications

BLP10H6xx BLP15M6100P BLP15M630

1200

1500

30

SOT1138

Q112

BLP15M660P

1200

1500

60

SOT1138

Q411

Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications

BLP15M7150P

1200

1500

150

SOT1138

Q112

Gen7 OMP push-pull LDMOS transistor for broadcast/ISM applications

1

1500

3, 5, 10

SOT1179

Q411

Gen7 OMP LDMOS driver transistor family for broadcast/ISM applications

BLP15M7xx

HPA

`` Final transistors in OMP package (SOT502-sized) ranging from 140 to 200 W in frequency bands from 730 MHz to 2.2 GHz `` Final transistors in OMP package (SOT502-sized) ranging from 3 to 500 W in ISM frequency bands from a few MHz up to 2.45 GHz

BLP25M710

1

2500

10

SOT1179

Q211

Gen7 OMP LDMOS driver transistor for broadcast/ISM applications

BLP25M74

1

2500

4

SOT1179

Q311

Gen7 OMP LDMOS driver transistor for broadcast/ISM applications

BLP7G10S-140P

700

1000

140

SOT1138

Q311

Gen7 OMP LDMOS transistor for GSM & LTE applications

BLP7G10S-140PG

700

1000

140

SOT1204

Q311

Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing) Gen7 OMP LDMOS transistor for GSM & LTE applications

BLP7G10S-25P

700

1000

25

SOT1138

Q411

BLP7G10S-25PG

700

1000

25

SOT1204

Q411

Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing)

BLP7G10S-45P

700

1000

45

SOT1138

Q411

Gen7 OMP LDMOS transistor for GSM & LTE applications

BLP7G10S-45PG

700

1000

45

SOT1204

Q411

Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing)

BLP7G20S-45P

1800

2000

45

SOT1138

Q411

Gen7 OMP LDMOS transistor for GSM & LTE applications

BLP7G20S-45PG

1800

2000

45

SOT1204

Q411

Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing)

BLP7G21S-140P

1800

2050

140

SOT1138

Q411

Gen7 OMP LDMOS transistor for TD-SCDMA applications

BLP7G21S-140PG

1800

2050

140

SOT1204

Q411

Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing)

BLP7G22-10

1800

2200

10

SOT1179

Q311

Gen7 OMP LDMOS transistor for WCDMA & GSM applications

BLP7G22S-140

2000

2200

140

SOT1138

Q411

Gen7 OMP LDMOS transistor for WCDMA applications

BLP7G22S-140G

2000

2200

140

SOT1204

Q411

Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing)

BLP7G22S-45P

2000

2200

45

SOT1138

Q112

Gen7 OMP LDMOS transistor for WCDMA applications

BLP7G22S-45PG

2000

2200

45

SOT1204

Q112

Gen7 OMP LDMOS transistor for WCDMA applications (gull-wing)

NXP Semiconductors RF Manual 15th edition

69

Focus applications, products & technologies

offers in ceramic packages for all frequency ranges and applications up to 2.45 GHz.

3. Products by function NXP RF product catalog: http://www.nxp.com/rf

3.1

New products

DEV = In development CQS = Customer qualification samples RFS = Release for supply Expected status May 2011

Planned release

Chapter

NEW: Wideband transistors BFU610F Gen6 wideband transistor BFU630F Gen6 wideband transistor BFU660F Gen6 wideband transistor BFU690F Gen6 wideband transistor BFU710F Gen7 wideband transistor BFU730F Gen7 wideband transistor BFU760F Gen7 wideband transistor BFU790F Gen7 wideband transistor

RFS RFS RFS RFS RFS RFS RFS RFS

Released Released Released Released Released Released Released Released

3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1

NEW: AEC-Q101 qualified wideband MMICs and transistors BGA2002 Low noise wideband amplifier MMIC BFR94A RF wideband transistor BFR94AW RF wideband transistor

RFS RFS RFS

Released Released Released

3.4.1 3.3.1 3.3.1

NEW: SiGe:C LNAs (for e.g. GPS) BGU7005 SiGe:C MMIC, incl matching output for GPS LNA, 16.5 dB BGU7007 GPS LNA, 18.5 / 19.5 dB gain BGU7004 GPS LNA, 16.5 / 17.5 dB gain, AEC-Q100 BGU7008 GPS LNA, 18.5 / 19.5 dB gain, AEC-Q100 BGU7003W General-purpose unmatched LNA for FM radio

RFS RFS RFS RFS CQS

Released Released Released Released Q2 2011

3.4.1 3.4.1 3.4.1 3.4.1 3.4.1

NEW: LNAs for set-up boxes BGU7042 LNA for STB tuning BGU7041 LNA for STB tuning

RFS RFS

Released Released

3.4.1 3.4.1

NEW: General purpose wideband amplifiers (50 Ω gain blocks) BGA2802 IF gain block 25 dB BGA2803 IF gain block 23.4 dB BGA2870 IF gain block 31 dB

RFS RFS RFS

Released Released Released

3.4.1 3.4.1 3.4.1

NEW: Medium power amplifier MMICs BGA7124 Medium power amplifier, 24 dBm P1dB, leadless SOT908 BGA7024 Medium power amplifier, 24 dBm P1dB, leaded SOT89 BGA7127 Medium power amplifier, 27 dBm P1dB, leadless SOT908 BGA7027 Medium power amplifier, 27 dBm P1dB, leaded SOT89 BGA7130 Medium power amplifier, 30 dBm P1dB, leadless SOT908

RFS RFS RFS RFS DEV

Released Released Released Released Q4 2011

3.4.1 3.4.1 3.4.1 3.4.1 3.4.1

NEW: VGAs for wireless infrastructures BGA7350 Dual IF VGA, control range 24 dB BGA7351 Dual IF VGA , control range 28 dB BGA7202 Tx RF VGA, 0.7 - 2.2 GHz BGA7204 Tx RF VGA, 0.7 - 2.8 GHz

RFS CQS CQS CQS

Released Q3 2011 Q3 2011 Q3 2011

3.4.1 3.4.1 3.4.1 3.4.1

NEW: LNAs for wireless infrastructures BGU7051 LNA 900 MHz BGU7052 LNA 1.9 GHz BGU7053 LNA 2.5 GHz

CQS CQS CQS

Q2 2011 Q2 2011 Q2 2011

3.4.1 3.4.1 3.4.1

New: LO generators for wireless infrastructures BGX7300 Rx LO generator, 400 MHz to 3 GHz

DEV

Q4 2011

3.4.2

New: IQ modulators for wireless infrastructures BGX7100 IQ modulator, OIP3 30 dB, NF 165 dBm/Hz, P < 1 W, 350 MHz

DEV

Q4 2011

3.4.2

New: Dual mixers for wireless infrastructures BGX7220 Dual mixer , NF 8 dB, IIP3 30 dBm, P < 1 W, 700 MHz to 1.2 GHz BGX7221 Dual mixer , NF 8 dB, IIP3 30 dBm, P < 1 W, 1.7G Hz to 2.7 GHz

DEV DEV

Q4 2011 Q4 2011

3.4.2 3.4.2

Type

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NXP Semiconductors RF Manual 15th edition

Application / Description

Planned release

Chapter

NEW: Low noise LO generators for VSAT applications TFF1007HN Low noise LO generator for VSAT applications TFF1008HN Low noise LO generator for VSAT applications

RFS RFS

Released Released

3.4.4 3.4.4

NEW: RF satellite ICs TFF1014HN TFF1015HN TFF1017HN TFF1018HN

RFS RFS RFS RFS

Released Released Released Released

3.4.3 3.4.3 3.4.3 3.4.3

NEW: RF CATV modules CGY1041 1 GHz, 21 dB gain push-pull, GaAs HFET SOT115 CGY1043 1 GHz, 23 dB gain push-pull, GaAs HFET SOT115 CGY1049 1 GHz, 29 dB gain push-pull, GaAs HFET SOT115 CGY1032 1 GHz, 32 dB gain push-pull, GaAs HFET SOT115 CGD1046Hi 1 GHz, 26 dB gain power doubler, GaAs HFET SOT115 BGO807CE 870 MHz, forward path optical receiver, SOT115 CGD982HCi 1 GHz, 22 dB gain GaAs high output power doubler CGD985HCi 1 GHz, 25 dB gain GaAs high output power doubler CGD987HCi 1 GHz, 27 dB gain GaAs high output power doubler

RFS RFS RFS RFS RFS RFS RFS RFS RFS

Released Released Released Released Released Released Released Released Released

3.6.2 3.6.2 3.6.2 3.6.2 3.6.3 3.6.4 3.6.3 3.6.3 3.6.3

NEW: RF high-speed data converters ADC1613D series Dual 16-bit ADC up to 65/80/105/125 Msps ADC1613S series Single 16-bit ADC up to 65/80/105/125 Msps ADC1610S series Single 16-bit ADC up to 65/80/105/125 Msps ADC1415S series Single 14-bit ADC up to 65/80/105/125 Msps ADC1413D series Dual 14-bit ADC up to 65/80/105/125 Msps ADC1413S series Single 14-bit ADC up to 65/80/105/125 Msps ADC1412D series Dual 14-bit ADC up to 65/80/105/125 Msps ADC1410S series Single 14-bit ADC up to 65/80/105/125 Msps ADC1215S series Single 12-bit ADC up to 65/80/105/125 Msps ADC1213D series Dual 12-bit ADC up to 65/80/105/125 Msps ADC1213S series Single 12-bit ADC up to 65/80/105/125 Msps ADC1212D series Dual 12-bit ADC up to 65/80/105/125 Msps ADC1210S series Single 12-bit ADC up to 65/80/105/125 Msps ADC1207S080 Single 12-bit ADC 80 Msps ADC1206S series Single 12-bit ADC up to 40/55/70 Msps ADC1115S125 Single 11-bit ADC up to 125 Msps ADC1113D125 Dual 11-bit ADC up to 125 Msps ADC1113S125 Single 11-bit ADC up to 125 Msps ADC1112D125 Dual 11-bit ADC up to 125 Msps ADC1015S series Single 10-bit ADC up to 65/80/105/125 Msps ADC1010S series Single 10-bit ADC up to 65/80/105/125 Msps ADC1006S series Single 10-bit ADC up to 55/70 Msps ADC1005S060 Single 10-bit ADC 60 Msps ADC1004S series Single 10-bit ADC 30/40/50 Msps ADC1003S series Single 10-bit ADC 30/40/50 Msps ADC1002S020 Single 10-bit ADC 20 Msps ADC0808S series Single 8-bit ADC up to 125/250 Msps ADC0804S series Single 8-bit ADC up to 30/40/50 Msps ADC0801S040 Single 8-bit ADC 40 Msps DAC1408D series Dual 14-bit DAC up to 650/750 Msps DAC1405D series Dual 14-bit DAC up to 650/750 Msps DAC1403D160 Dual 14-bit DAC 160 Msps DAC1401D125 Dual 14-bit DAC 125 Msps DAC1208D series Dual 12-bit DAC up to 650/750 Msps DAC1205D series Dual 12-bit DAC up to 650/750 Msps DAC1203D160 Dual 12-bit DAC 160 Msps DAC1201D125 Dual 12-bit DAC 125 Msps DAC1008D series Dual 10-bit DAC up to 650/750 Msps DAC1005D series Dual 10-bit DAC up to 650/750 Msps DAC1003D160 Dual 10-bit DAC 160 Msps DAC1001D125 Dual 10-bit DAC 125 Msps

RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS RFS

Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released Released

3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2

DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV

Q311 Q311 Q311 Q311 Q411 Q311 Q311 Q311 Q112 Q311 Q112 Q411 Q311 Q311

3.7.1.4 3.7.1.5 3.7.1.1 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.5 3.7.1.5 3.7.1.6 3.7.1.1 3.7.1.1 3.7.1.4 3.7.1.1 3.7.1.4

Application / Description

Satellite LNB downconverter IC Satellite LNB downconverter IC Satellite LNB downconverter IC Satellite LNB downconverter IC

NEW: RF power transistors BLF6G22LS-40P Gen6 ceramic push-pull driver/final LDMOS transistor for WCDMA & LTE applications BLF6G27LS-40P Gen6 ceramic push-pull driver/final LDMOS transistor for LTE applications BLF7G10LS-250 Gen7 ceramic LDMOS transistor for GSM & LTE applications BLF7G21LS-160P Gen7 ceramic push-pull LDMOS transistor for TD-SCDMA applications BLF7G22LS-100P Gen7 ceramic push-pull LDMOS transistor for WCDMA applications BLF7G22LS-160 Gen7 ceramic LDMOS transistor for WCDMA applications BLF7G24LS-160P Gen7 ceramic push-pull LDMOS transistor for LTE applications BLF7G27LS-200P Gen7 ceramic push-pull LDMOS transistor for LTE applications BLF7G38LS-90P Gen7 ceramic push-pull LDMOS transistor for WiMAX applications BLF8G10LS-160 Gen8 ceramic LDMOS transistor for GSM & LTE applications BLF8G10LS-300P Gen8 ceramic push-pull LDMOS transistor for GSM & LTE applications BLM7G22S-60PG Gen7 LDMOS MMIC for WCDMA applications (gull-wing) BLP7G10S-140PG Gen7 OMP LDMOS transistor for GSM & LTE applications (gull-wing) BLP7G22-10 Gen7 OMP LDMOS transistor for WCDMA & GSM applications

NXP Semiconductors RF Manual 15th edition

Products by function

Expected status May 2011

Type

71

Application / Description

Expected status May 2011

Planned release

Chapter

ceramic push-pull LDMOS transistor for FM broadcast applications ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications ceramic LDMOS driver transistor for broadcast/ISM applications ceramic push-pull LDMOS transistor for VHF/UHF broadcast applications extremely rugged ceramic push-pull transistor for broadcast/ISM applications extremely rugged ceramic push-pull LDMOS transistor for broadcast/ISM applications Gen6 ceramic push-pull LDMOS transistor for broadcast applications Gen6 ceramic push-pull LDMOS transistor for broadcast applications Gen6 ceramic push-pull LDMOS transistor for broadcast/ISM applcations Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 high-voltage OMP LDMOS driver transistor family for broadcast/ISM applications Gen6 ceramic LDMOS transistor for ISM applications Gen6 ceramic push-pull LDMOS transistor for digital broadcast applications Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen6 OMP LDMOS transistor for broadcast/ISM applications Gen6 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen7 OMP push-pull LDMOS transistor for broadcast/ISM applications Gen7 OMP LDMOS driver transistor family for broadcast/ISM applications Gen7 OMP LDMOS driver transistor for broadcast/ISM applications Gen7 OMP LDMOS driver transistor for broadcast/ISM applications Gen6 ceramic LDMOS driver transistor for 2.45 GHz ISM applications Gen7 LDMOS MMIC for 2.45 GHz ISM applications Gen8 OMP LDMOS transistor for 2.45 GHz ISM applications Gen6 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications Gen7 ceramic LDMOS transistor for 2.45 GHz ISM applications Gen7 ceramic push-pull LDMOS transistor for 2.45 GHz ISM applications Gen8 OMP push-pull LDMOS transistor for 2.45 GHz ISM applications

DEV DEV DEV DEV DEV DEV DEV DEV DEV CQS DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV DEV

Q211 Q112 Q411 Q211 Q411 Q311 Q311 Q111 Q311 now Q112 Q411 Q112 Q112 Q411 Q411 Q311 Q311 Q211 Q112 Q112 Q411 Q112 Q411 Q311 Q311 Q311 Q411 Q112 Q311 Q311 Q311 Q312

3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.2 3.7.2.2 3.7.2.2 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3

DEV DEV DEV DEV DEV DEV RFS DEV DEV

3.7.3.1 3.7.3.1 3.7.3.2 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3

Type

NEW: RF power broadcast and ISM transistors BLF178P BLF572P BLF573P BLF642 BLF647P BLF278XR BLF578XR BLF879P BLF884P BLF888A BLP05H6100P BLP05H6500P BLP05H650P BLP09H620 BLP10H6120 BLP10H6300P BLP10H6xx BLF6G13LS-250P BLF6G15LS-500H BLP15M6100P BLP15M630 BLP15M660P BLP15M7150P BLP15M7xx BLP25M74 BLP25M710 BLF25M612 BLM2425M720 BLP2425M8140 BLF2425M6LS180P BLF2425M7LS200 BLF2425M7LS250P BLP2425M8250P

NEW: RF microwave transistors BLA6H0912-1000 1000 W ceramic Avionics LDMOS transistor BLA6G1011LS-200RG Gull-wing ceramic Avionics LDMOS transistor BLL6G1214L-250 Gen6 ceramic LDMOS transistor for L-band applications BLS6G2731P-200 S-band pallet using 2x Gen6 ceramic LDMOS transistors BLS6G2735LS-30 Gen6 ceramic LDMOS driver transistor for S-band radar applications BLS7G2729LS-350P Gen6 ceramic push-pull LDMOS transistor for S-band radar applications BLS7G2933S-150 Gen7 ceramic LDMOS transistor for S-bad radar applcations BLS6G2933P-200 S-band pallet using 2x Gen6 ceramic LDMOS transistors BLS7G3135LS-350P Gen6 ceramic push-pull LDMOS transistor for S-band radar applications

72

NXP Semiconductors RF Manual 15th edition

Q311 Q211 Q311 Q311 Q211 Q211 released Q211 Q211

3.2

RF diodes

3.2.1 Varicap diodes

Varicap selection guide on www.nxp.com/varicaps Easy-to-use parametric filters help you to choose the right varicap for your design.

VCO and FM radio tuning varicap diodes @ f = 1 MHz Type

Package

Number of diodes

BB145B BB156 BB198 BB199 BB201 BB202^^ BB202LX^^ BB207^ BB208-02^ BB208-03^

SOD523 SOD323 SOD523 SOD523 SOT23 SOD523 SOD882D SOT23 SOD523 SOD323

1 1 1 1 2 1 1 2 1 1

Configuration SG SG SG SG CC SG SG CC SG SG

Cd min

Cd typ

Cd max

@ VR =

Cd min

Cd typ

Cd max

@ VR =

(pF)

(pF)

(pF)

6.4 14.4 25 36.5 89 28.2 28.2 76 19.9 19.9

16 95 81 -

7.2 17.6 28.5 42.5 102 33.5 33.5 86 23.2 23.2

(V)

(pF)

(pF)

(pF)

1 1 1 0.5 1 0.2 0.2 1 1 1

2.55 4.2 4.8 11.8 25.5 7.2 7.2 25.5 4.5 4.5

4.8 27.6 27.6 -

2.95 5.4 6.8 13.8 29.7 11.2 11.2 29.7 5.4 5.4

^ = Including special design for FM car radio (CREST-IC:TEF6860). ^^ = Including special design for mobile phone tuner ICs.

rs typ

rs max

@f=

(V)

(Ω)

(Ω)

(MHz)

4 7.5 2 7.5 2.3 2.3 7.5 7.5 7.5

0.4 0.25 0.25 0.35 0.35 0.2 0.35 0.35

0.6 0.7 0.8 0.5 0.6 0.4 0.5 0.5

470 470 100 100 100 100 100 100 100 100

Cd1/ Cd2 max

@ V1 =

@ V2 =

(V)

Cd1/ Cd2 min

(V)

4 7.5 4 2 7.5 2.3 2.3 7.5 7.5 7.5

2.2 2.7 2.8 3.1 2.5 2.5 2.6 3.7 3.7

3.9 3.8 3.3 5.2 5.2

1 1 0.5 1 0.2 0.2 1 1 1

Type of connection:

CC: SG:

Common Cathode Single

TV / VCR / DVD / HDD varicap diodes - UHF tuning @ f = 1 MHz Type

Matched BB149 BB149A BB179 BB179B BB179BLX BB179LX BB184 BB189 Unmatched BB135

Package

SOD323 SOD323 SOD523 SOD523 SOD882D SOD882D SOD523 SOD523 SOD323

Cd min

Cd typ

Cd max

@ VR =

(pF)

(pF)

(pF)

(V)

1.9 1.951 1.951 1.9 1.9 1.95 1.87 1.89

2.1 2.1 2.1 2.1 2.1 2 2.04

2.25 2.225 2.225 2.25 2.25 2.22 2.13 2.18

1.7

-

2.1

rs typ

rs max

@f=

@ Cd =

(V)

(Ω)

(Ω)

(MHz)

(pF)

1 1 1 1 1 1 1 2

28 28 28 28 28 28 10 25

0.6 0.6 0.6 0.65 0.65 0.65 0.65

0.75 0.75 0.75 0.75 0.7

470 470 470 470 470 470 470 470

9 9 9 9 9 30 9 9

0.5

28

-

0.75

470

9

@ V1 =

@ V2 =

(V)

10 10.9 10.9 10 10.9 12

Cd1/Cd2 min

Cd1/Cd2 typ

Cd1/Cd2 max

28 28 28 28 28 28 10 25

8.2 8.45 8.45 8.45 8.45 6 6.3

9 9 9 9 9 9 7 7.3

28

8.9

-

@ V1 =

@ V2 =

(V)

(V)

2 2 2 2 2 2 2 1.8

0.5 1 1 1 1 1 1 2

28 28 28 28 28 28 10 25

10 10 10 10 10 5 5 10

-

-

-

-

∆Cd/ Cd

@ Ns =

Bold = Highly recommended product

NXP Semiconductors RF Manual 15th edition

73

Products by function

Why choose NXP’s varicap diodes: `` Reference designs for TV and radio tuning `` Direct matching process `` Small tolerances `` Short lead time `` Complete portfolio covering broad frequency range and variety in package (including leadless) `` Reliable volume supply

TV / VCR / DVD / HDD varicap diodes - VHF tuning @ f = 1 MHz Type

Cd min

Cd typ

Cd max

@ VR =

(pF)

(pF)

(pF)

SOD323 SOD323 SOD323 SOD523 SOD882D SOD523 SOD882D SOD523 SOD882D

2.4 2.48 2.361 2.361 2.36 2.48 2.48 2.57 2.57

2.6 2.7 2.6 2.6 2.6 2.7 2.7 2.75 2.75

SOD323 SOD523 SOD882D SOT23

0.7 0.7 0.7 4.3

-

Package

Matched BB148 BB152 BB153 BB178 BB178LX BB182 BB182LX BB187 BB187LX Unmatched BB131 BB181 BB181LX BBY40

rs typ

rs max

@f=

@ Cd =

(V)

(Ω)

(Ω)

(MHz)

(pF)

1 1 1 1 1 1 1 2 2

28 28 28 28 28 28 28 25 25

1 0.65 0.65 0.7 1 1 -

0.9 1.2 0.8 0.8 1.2 0.75 0.75

100 100 100 100 470 100 100 470 470

12 30 30 30 30 30 30 -

0.5 0.5 0.5 3

28 28 28 25

2 -

3 3 0.7

470 470 470 200

9 9 9 25

Cd1/ Cd2 typ

Cd1/ Cd2 max

@ V1 =

@ V2 =

(V)

Cd1/ Cd2 min

(V)

2.75 2.89 2.754 2.754 2.75 2.89 2.89 2.92 2.92

28 28 28 28 28 28 28 25 25

14.5 20.6 13.5 13.5 13.5 20.6 11 11

15 22 15 15 15 22 22 -

-

1.055 1.055 1.055 6

28 28 28 25

12 12 5

14 -

16 16 6.5

@ V1 =

@ V2 =

(V)

(V)

2 2 2 2 2 2 2 2 2

0.5 1 1 1 1 1 1 2 2

28 28 28 28 28 28 28 25 25

10 10 10 10 5 10 10 10 10

-

-

-

-

∆Cd/ Cd

@ Ns =

3.2.2 PIN diodes Cd (fF)

Pin diode selection guide on www.nxp.com/pindiodes Easy-to-use parametric filters help you to choose the right pin diode for your design.

brb407

700 600

BAP65LX

Freq = 100 MHz, Cd @ VR = 0 V rD @ 0.5 mA rD @ 10 mA

BAP65LX

500 400

BAP50LX BAP63LX BAP63LX BAP1321LX BAP51LX BAP51LX BAP1321LX BAP142LX BAP142LX

300 200

BAP64LX

BAP70-02

100

Why choose NXP’s PIN diodes: } Broad portfolio } Unrivalled performance } Short lead time } Low series inductance } Low insertion loss } Low capacitance

0 10−1

1

10

BAP50LX

BAP64LX BAP70-02

102

rD (Ω)

brb408

25

Freq = 1800 MHz, Isolation @ VR = 0 V Insertion Loss @ 0.5 mA Insertion Loss @ 10 mA

Isolation (dB) 20

BAP70-20

BAP50LX BAP64LX BAP51LX BAP142LX BAP1321LX BAP63LX

15

10

BAP65LX

5

0 10−2

BAP50LX

BAP70-02

BAP64LX

BAP51LX BAP142LX BAP1321LX

BAP63LX

BAP65LX

10−1

1

Insertion Loss (dB)

10

Look for more graphs showing the Pin diode line-up at other frequencies on our web site: www.nxp.com/pindiodes

PIN diodes : typical rD @ 1 mA ≤ 2, switching diodes @ f = 100 MHz Type

BAP65LX BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP63LX BAP63-02 BAP63-03 BAP63-05W

Package

SOD882D SOD523 SOD323 SOT23 SOT323 SOD882D SOD523 SOD323 SOT323

Number of diodes

Conf

VR max (V)

IF max (mA)

1 1 1 2 2 1 1 1 2

SG SG SG CC CC SG SG SG CC

30 30 30 30 30 50 50 50 50

100 100 100 100 100 100 100 100 100

Bold = Highly recommended product 74

NXP Semiconductors RF Manual 15th edition

@ IF = 0.5 mA

@ IF = 1 mA

@ f = 1 MHz @ IF = 10 mA

@ VR =0V

@ VR = 1 V

@ VR = 20 V

rD typ (Ω)

rD max (Ω)

rD typ (Ω)

rD max (Ω)

rD typ (Ω)

rD max (Ω)

Cd typ (pF)

Cd typ (pF)

Cd max (pF)

Cd typ (pF)

Cd max (pF)

2.3 2.5 2.5 2.5

3.3 3.5 3.5 3.5

0.94 1 1 1 1 1.87 1.95 1.95 1.95

3 3 3 3

0.49 0.56 0.56 0.56 0.56 1.19 1.17 1.17 1.17

0.9 0.9 0.9 0.9 0.9 1.8 1.8 1.8 1.8

0.61 0.65 0.65 0.7 0.7 0.34 0.36 0.4 0.4

0.48 0.55 0.55 0.575 0.575 0.29 0.32 0.35 0.35

0.85 0.9 0.9 0.9 0.9 -

0.37 0.375 0.375 0.425 0.425 0.24 0.25 0.27 0.3

0.3 0.32 0.32 0.35

PIN diodes : typical rD @ 1 mA = 2.2 - 2.4, switching diodes @ f = 100 MHz Type

BAP55LX BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX

Package

Number of diodes

Conf

VR max (V)

IF max (mA)

SOD882D SOD523 SOD323 SOT23 SOD882D SOD882D

1 1 1 2 1 1

SG SG SG SR SG SG

50 60 60 60 60 50

100 100 100 100 100 100

@ IF = 0.5 mA rD typ (Ω) 3.3 3.4 3.4 3.4 3.3 3.3

rD max (Ω) 4.5 5 5 5 5 5

@ IF = 1 mA rD typ (Ω) 2.2 2.4 2.4 2.4 2.4 2.4

rD max (Ω) 3.3 3.6 3.6 3.6 3.6 3.6

@ IF = 10 mA rD typ (Ω) 0.8 1.2 1.2 1.2 1.2 1

rD max (Ω) 1.2 1.8 1.8 1.8 1.8 1.8

@ f = 1 MHz @ VR @ VR = 20 V @ VR = 1 V =0V Cd Cd Cd Cd Cd typ typ max typ max (pF) (pF) (pF) (pF) (pF) 0.28 0.23 0.18 0.28 0.4 0.35 0.45 0.25 0.32 0.4 0.35 0.45 0.25 0.32 0.42 0.375 0.45 0.275 0.325 0.32 0.27 0.38 0.21 0.28 0.25 0.22 0.16 0.26

PIN diodes : typical rD @ 1 mA = 3.2 - 3.6, switching diodes @ f = 100 MHz Type

BAP51LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W

Package

Number of diodes

Conf

VR max (V)

IF max (mA)

SOD882D SOD523 SOD323 SOT323 SOT323 SOT323

1 1 1 2 2 2

SG SG SG SR CC CA

60 60 50 50 50 50

100 50 50 50 50 50

@ IF = 0.5 mA rD typ (Ω) 4.9 5.5 5.5 5.5 5.5 5.5

rD max (Ω) 9 9 9 9 9 -

@ IF = 1 mA rD typ (Ω) 3.2 3.6 3.6 3.6 3.6 3.6

rD max (Ω) 6.5 6.5 6.5 6.5 6.5 -

@ f = 1 MHz @ IF = 10 mA rD typ (Ω) 1.4 1.5 1.5 1.5 1.5 2

rD max (Ω) 2.5 2.5 2.5 2.5 2.5 -

@ VR =0V Cd typ (pF) 0.3 0.4 0.4 0.4 0.4 0.4

@ VR = 1 V Cd typ (pF) 0.22 0.3 0.3 0.3 0.3 0.3

Cd max (pF) 0.4 0.55 0.55 0.55 0.55 -

@ VR = 20 V Cd typ (pF) 0.17 0.2 0.2 0.2 0.2 0.2

Cd max (pF) 0.3 0.35 0.35 0.35 0.35 -

@ f = 100 MHz Type

BAP64Q BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W BAP64-06 BAP64-06W

Package

Number of diodes

Conf

VR max (V)

IF max (mA)

4 1 1 2 2 2 2 2 2

SR SG SG SR SR CC CC CA CA

100 175 175 175 100 175 100 175 100

100 100 100 100 100 100 100 100 100

SOT753 SOD523 SOD323 SOT23 SOT323 SOT23 SOT323 SOT23 SOT323

@ IF = 0.5 mA rD typ (Ω) 20 20 20 20 20 20 20 20 20

rD max (Ω) 40 40 40 40 40 40 40 40 40

@ IF = 1 mA rD typ (Ω) 10 10 10 10 10 10 10 10 10

rD max (Ω) 20 20 20 20 20 20 20 20 20

Products by function

PIN diodes : typical rD @ 1 mA = 10, attenuator/switching diodes @ f = 1 MHz @ VR = 0V Cd rD max typ (Ω) (pF) 3,8 0.52 3.8 0.48 3.8 0.48 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52 3.8 0.52

@ IF = 10 mA rD typ (Ω) 2 2 2 2 2 2 2 2 2

@ VR = 1 V

@ VR = 20 V

Cd typ (pF) 0.37 0.35 0.35 0.37 0.37 0.37 0.37 0.37 0.37

Cd typ (pF) 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23 0.23

Cd max (pF) -

Cd max (pF) 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35 0.35

PIN diodes : typical rD @ 1 mA = 14 - 16, attenuator diodes @ f = 100 MHz Type

Package

Number of diodes

BAP50-02 SOD523 BAP50-03 SOD323 BAP50-04 SOT23 BAP50-04W SOT323 BAP50-05 SOT23 BAP50-05W SOT323 BAP50LX SOD882D BAP64LX^ SOD882D ^ = attenuator / switching diode

1 1 2 2 2 2 1 1

Conf

SG SG SR SR CC CC SG SG *= @ VR = 20 V

VR max (V)

IF max (mA)

50 50 50 50 50 50 50 60

50 50 50 50 50 50 50 100

@ IF = 0.5 mA rD typ (Ω) 25 25 25 25 25 25 26 31

rD max (Ω) 40 40 40 40 40 40 40 50

@ IF = 1 mA rD typ (Ω) 14 14 14 14 14 14 14 16

rD max (Ω) 25 25 25 25 25 25 25 26

@ f = 1 MHz @ VR = @ IF = 10 mA 0V Cd rD rD max typ typ (Ω) (Ω) (pF) 3 5 0.4 3 5 0.4 3 5 0.45 3 5 0.45 3 5 0.45 3 5 0.45 3 5 0.4 2.6 4.4 0.48

@ VR = 1 V Cd typ (pF) 0.3 0.3 0.35 0.35 0.3 0.35 0.28 0.34

Cd max (pF) 0.55 0.55 0.6 0.6 0.5 0.6 0.55 -

@ VR = 5 V Cd typ (pF) 0.22 0.2 0.3 0.3 0.35 0.3 0.19 0.17*

Cd max (pF) 0.35 0.35 0.5 0.5 0.6 0.5 0.35 0.3*

PIN diodes : typical rD @ 1 mA = 40, attenuator diodes @ f = 100 MHz Type

Package

Number of diodes

Conf

VR max (V)

IF max (mA)

BAP70Q BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM

SOT753 SOD523 SOD323 SOT323 SOT23 SOT363

4 1 1 2 2 4

SR SG SG SR CC SR

50 50 50 50 50 50

100 100 100 100 100 100

Bold = highly recommended product

SG = Single SR = Series

@ IF = 0.5 mA rD typ (Ω) 77 77 77 77 77 77

rD max (Ω) 100 100 100 100 100 100

@ IF = 1 mA rD typ (Ω) 40 40 40 40 40 40

rD max (Ω) 50 50 50 50 50 50

@ f = 1 MHz @ IF = 10 mA rD typ (Ω) 5.4 5.4 5.4 5.4 5.4 5.4

rD max (Ω) 7 7 7 7 7 7

@ VR =0V Cd typ (pF) 0.6 0.57 0.57 0.6 0.6 0.57

@ VR = 1 V

@ VR = 20 V

Cd typ (pF) 0.43 0.4 0.4 0.43 0.43 0.4

Cd max (pF) 0.25 0.2 0.2 0.25 0.25 0.2

Cd max (pF) -

Cd typ (pF) 0.3 0.25 0.25 0.3 0.3 0.25

CC = Common Cathode CA = Common Anode NXP Semiconductors RF Manual 15th edition

75

3.2.3 Band switch diodes Why choose NXP’s band switch diodes `` Reliable volume supplier `` Short lead time `` Low series inductance `` Low insertion loss `` Low capacitance `` High reverse isolation

Type

Package

VR max (V)

IF max (mA)

rD max (Ω)

@ IF = (mA)

@f= (MHz)

Cd max (pF)

@ VR = (V)

@f= (MHz)

BA277 BA591 BA891 BAT18

SOD523 SOD323 SOD523 SOT23

35 35 35 35

100 100 100 100

0.7 0.7 0.7 0.7

2 3 3 5

100 100 100 200

1.2 0.9 0.9 1

6 3 3 20

1 1 1 1

3.2.4 Schottky diodes Schottky diode selection guide on www.nxp.com/rfschottkydiodes Easy-to-use parametric filters help you to choose the right schottky diode for your design.

Why choose NXP’s schottky diodes `` Low diode capacitance `` Low forward voltage `` Single- and triple-isolated diode `` Small package Applications } Digital applications: - Ultra high-speed switching - Clamping circuits } RF applications: - Diode ring mixer - RF detector - RF voltage doubler Low capacitance schottky diodes Type BAT17 PMBD353 PMBD354^ 1PS76SB17 1PS66SB17 1PS79SB17 1PS88SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS66SB82 1PS10SB82

Package

Configuration

SOT23 SOT23 SOT23 SOD323 SOT666 SOD523 SOT363 SOT323 SOT323 SOT323 SOT323 SOT666 SOD882

single dual series dual series single triple isolated single triple isolated single dual series dual c.c dual c.a. triple isolated single

Bold = highly recommended product

76

VR max. (V) 4 4 4 4 4 4 15 15 15 15 15 15 15

IF max. (mA) 30 30 30 30 30 30 30 30 30 30 30 30 30

^ Diodes have matched capacitance

NXP Semiconductors RF Manual 15th edition

VF max. (mV) 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 450 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA 340 @ IF = 1 mA

CD max. (pF) 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V 1 @ VR = 0 V

3.3

RF Bipolar transistors

3.3.1 Wideband transistors RF wideband transistor selection guide on www.nxp.com/rftransistors Easy-to-use parametric filters help you to choose the right RF wideband transistor for your design.

Why choose NXP’s wideband transistors st th `` Broad portfolio (1 - 7 generation) `` Short lead time `` Smallest packages `` Volume delivery

Wideband transistors The fT-IC curve represents Transition Frequency (fT)

Products by function

characteristics as a function of collector current (IC) for the six generations of RF wideband transistors. A group of transistors having the same collector current (IC) and similar transition frequencies (fT) represents a curve. The curve number matches products in the table, detailing their RF characteristics.

Wideband transistors line-up per frequency bra510

100 (33)

(37)

fT (GHz)

7th generation

(39)

(35)

(27)

(26)

(29)

(25)

(36)

10

(31)

(20)

(30)

(38)

(40)

4th generation

(23)

(22)

(21)

(19)

(34)

(15)

(14)

(16)

(18)

3rd generation (11)

(7)

(9)

(8)

(12)

(10) 2nd generation

(4) (1)

1 0.1

0.5

0.2

1

(3)

2

5

1st generation

10

20

Pin

4

1

3

3

2

2 Figure 1

6th generation 5th generation

(32)

(41)

1 2 3 4

4

1 2 3 4

1 Figure 2

1 2 3 4

50

100

200

500 IC (mA)

1000

Description Type (see Fig.1) collector base emitter emitter Type/X (see Fig.1) collector emitter base emitter Type/XR (see Fig.2) collector emitter base emitter NXP Semiconductors RF Manual 15th edition

77

Wideband transistors (RF small signal)

GUM (typ) (dB)

400 400 400 2000 2100 2000 2000

NPN NPN NPN NPN NPN NPN NPN

7 7 7 -

@ VCE = (V)

Polarity

250 250 250 500 250 250 500

@ IC = (mA)

P tot (max) (mW)

8 8 10 10 8 10 9.5

SOT143 SOT143 SOT343 SOT223 SOT223H SOT223 SOT223

@ f = (MHz)

IC (max) (mA)

BFG10 BFG10/X BFG10W/X BLT50 BLT70 BLT80 BLT81

VCEO (max) (V)

Type

Package

RF power transistors for portable equipment (VHF)

1900 1900 1900 -

1 1 1 -

3.6 3.6 3.6 -

@ IC = (mA)

@ VCE = (V)

1

1

-

-

1000

0.5 1 1.8 0.5 1 2 0.5 1 2 -70 -10 100 10 15 10 2 70 10 - 3.75 50 10 3.3 30 6 3.5 15 10 3 15 10 2 14 10 2.5 0.5 1 1.8 0.5 1 1.8 2.5 -15 -10 2.5 2.4 -30 -5 2.4

1000 1000 1000 1000 500 500 800 2000 1000 800 1000 1000 500 500 500 500

0.5 1 1 5 -50 50 30 5 5 2 1 0.5 -5 -5 -10 -10

1 1 1 10 -10 10 6 10 10 5 1 1 -10 -10 -5 -5

3 2.1 3 3 3

2000 1000 2000 1000 1000

5 5 5 -5 -10

10 10 10 -10 -5

800 800 2000 2000 2000 2000 2000 2000 2000 1000 2000 2000 2000 2000 2000 2000 2000

100 50 80 80 70 15 15 30 30 45 70 15 30 30 30 30 30

1000 1000 1000 1000 500 1000 1000 1000 1000 1000 1000

15 15 5 5 45 5 5 5 5 5 5

8 8 8 8 10 8 8 8 8 8 8

2.5 2.5 2.3 2.3 3 2.7 3 3 3 2.1 2.1

2000 2000 2000 2000 1000 2000 2000 2000 2000 2000 2000

5 5 5 5 45 15 5 5 5 5 5

8 8 8 8 10 8 8 8 8 8 8

SOT23 SOT323 SOT23

1 1.6 2.3

15 15 5

25 300 NPN 50 300 NPN 6.5 30 NPN

BFG25A/X BFG25AW BFG25AW/X BFG31 BFG35 BFG92A/X BFG97 BFQ149 BFQ18A BFQ19 BFR106 BFR92A BFR92AW BFS17A BFS25A BFT25A BFT92 BFT92W BFT93 BFT93W

2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd 2nd

18 18 18 10 11 7 10 10 11 10 10 7 7 4 18 18 7 7 9 9

SOT143B 5 SOT343N 5 SOT343N 5 SOT223 5 SOT223 4 SOT143B 5 SOT223 5.5 SOT89 5 SOT89 4 SOT89 5.5 SOT23 5 SOT23 5 SOT323 5 SOT23 2.8 SOT323 5 SOT23 5 SOT23 5 SOT323 4 SOT23 5 SOT323 4

5 5 5 -15 18 15 15 -15 18 15 15 15 15 15 5 5 -15 -15 -12 -12

6.5 6.5 6.5 -100 150 25 100 -100 150 100 100 25 25 25 6.5 6.5 -25 -35 -35 -50

32 500 500 1000 1000 400 1000 1000 1000 1000 500 300 300 300 32 32 300 300 300 300

NPN NPN NPN 16 1000 0.5 PNP 16 500 -70 NPN 15 500 100 NPN 16 1000 15 NPN 16 500 70 PNP 12 500 -50 NPN NPN 11.5 500 50 NPN NPN 14 1000 15 NPN 14 1000 15 NPN NPN NPN PNP 18 500 -14 PNP 17 500 -15 PNP 16.5 500 -30 PNP 15.5 500 -30

18 16 1 8 -10 12 10 11 10 11 10 12 -10 10 7.5 - 11.5 10 8 10 8 - 13.5 13 15 -10 -10 11 -5 -5 10

1000 2000 2000 800 800 2000 800 800 800 2000 2000 800 1000 1000 1000

BFG135 BFG198 BFG590 BFG590/X BFG591 BFG67 BFG67/X BFG93A BFG93A/X BFG94 BFQ591 BFQ67W BFR93A BFR94A^ BFR93AR BFR93AW BFR94AW^

3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd 3rd

16 15 22 22 22 14 14 8 8 8 22 14 8 8 8 8 8

SOT223 SOT223 SOT143B SOT143B SOT223 SOT143B SOT143B SOT143B SOT143B SOT223 SOT89 SOT323 SOT23 SOT23 SOT23 SOT323 SOT323

15 10 15 15 15 10 10 12 12 12 15 10 12 12 12 12 12

150 100 200 200 200 50 50 35 35 60 200 50 35 35 35 35 35

1000 1000 400 400 2000 380 380 300 300 700 2250 300 300 300 300 300 300

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

10 8 4 4 12 8 8 8 8 12 8 8 8 8 8 8

7 8 5 5 7 8 8 6 6 6 7 8 6 6 6 5 5

Bold = Highly recommended product Bold Red = New, highly recommended product ^ = AEC-Q101 qualified (some limitations apply)

78

NXP Semiconductors RF Manual 15th edition

Polarity

3 3 1

Type

1st 1st 1st

16 18 13 13 13 17 17 16 16 11 13 13 13 13 13 13

500 500 900 900 900 1000 1000 1000 1000 900 1000 1000 1000 1000 1000 1000

100 50 80 80 70 15 15 30 30 70 15 30 30 30 30 30

12 15 7.5 7.5 7.5 10 10 10 10 13.5 5.5 8 7 7 7 8 8

10 8 4 4 12 8 8 8 8 10 12 8 8 8 8 8 8

1.7 1.7 1.7 1.7 2.7 1.3 1.9 1.9 1.9 1.5 1.5

NF (typ) (dB)

-

BFS17 BFS17W BFT25

NF (typ) (dB)

-

IC (max) (mA)

5 5 1

VCEO (max) (V)

2 2 1

f T (typ) (GHz)

500 500 500

Package

4.5 4.5 3.8

Curve

@ VCE = (V)

@ f = (MHz) 800

@ IC = (mA)

GUM (typ) (dB) 12

@ f = (MHz)

@ VCE = (V) 1

@ VCE = (V)

@ IC = (mA) 1

@ IC = (mA)

@ f = (MHz) 500

@ f = (MHz)

GUM (typ) (dB) 18

Generation

P tot (max) (mW)

RF wideband transistors generation 1 - 3

IP3 (typ) (dBm)

@ IC = (mA)

@ VCE = (V)

@ IC = (mA)

@ VCE = (V)

2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000

5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 20 15 5 5 20 20 40 5 20 40 15 30 15 15 30

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6

1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.6 1.1 1.1 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.1 1.2 1.9 1.7 1.2 1.2 1.1 1.1 1.3 1.2 1.1 1.3 1.4 1.3 1.5 1.5 1.3

900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 1000 900 900 900 900 900 900 900 900 1000 1000 1000 1000 1000

5 5 5 5 5 20 20 20 5 5 10 10 10 10 10 10 10 1 5 40 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 8 6 6 6 6 8 6 6 8 6 6 6 6 6

1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.9 1.85 1.85 2.1 2.1 2.1 2.1 2.1 2.1 2.1 1.9 1.9 2.7 1.9 1.9 1.9 1.9 2.1 1.9 1.9 2.1 2 2 2.1 2.1 1.8

2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000 2000

1.25 1.25 1.25 1.25 1.25 5 5 5 5 5 10 10 10 10 10 10 10 5 5 15 5 1.25 5 5 10 1.25 5 10 5 5 5 5 5

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 3 3 8 6 6 6 6 8 6 6 8 6 6 6 6 6

4 4 4 4 4 17 17 17 17 17 21 21 21 21 21 21 21 4 5 17 17 21 4 17 21 -

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 -

900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 900 -

NPN 18 NPN 18 NPN 18.3 NPN 18.3

1800 1800 1800 1800

5 5 15 15

3 3 3 3

-

-

-

-

1 1 1.1 1.1

2000 2000 2000 2000

1 1 3 3

3 3 3 3

1.8 1.8 8.7 8.7

3 3 3 3

1800 5 1800 5 1800 15 1800 15

PL(1dB) (typ) (dBmW)

900 900 900 900 900 900

1 1 2 2 2 8

2 2 2 2 2 2

1.6 1.2 1.2 1.2 1.2 1.8

2000 2000 2000 2000 2000 2000

1 1 2 2 2 8

2 2 2 2 2 2

5 1 5 2 12 2 12 2 12 2 20 3.6

900 1 6 1 2000 10 15 10 2000 25 22 25 2000 25 22 25 2000 25 22 25 2000 1 28 80

1 2 2 2 2 2

5800 2400 1500 1500 12000 5800 5800 2400 2400

8 25 60 90 8 25 25 60 90

2 2 2 2 2 2 2 2 2

0.75 0.58 0.6 0.7 0.9 0.47 0.56 0.5 0.56

2400 1500 1500 1500 5800 2400 2400 1500 1500

1 5 20 50 2 5 5 20 50

2 2 2 2 2 2 2 2 2

1.4 5800 1 0.73 2400 5 0.75 2400 20 0.9 2400 50 1.7 12000 2 0.7 5800 5 1 5800 5 0.6 2400 20 0.7 2400 50

2 2 2 2 2 2 2 2 2

8 -

- 14 8 - 23 25 - 30 60 - 35 90 - 14.5 8 5800 25 19 25 - 20.5 25 - 23 60 - 24 90

5 5 5 5 2 2 2 2 2

2 -

IP3 (typ) (dBm)

1 0.9 0.8 0.8 0.8 1.2

@ IC = (mA)

3.6 2 2 2 2 2 2

@ f = (MHz)

1 3 10 25 25 25 80

@ VCE = (V)

@ VCE = (V)

1900 2000 2000 2000 2000 2000 2000

NF (typ) (dB)

10 22 21 23 22 20 16

NF (typ) (dB)

@ IC = (mA)

NPN 21 NPN 28 NPN 28.5 NPN 25.6 NPN 16.5 NPN 18 NPN 20.3 NPN 25 NPN 20.4

@ f = (MHz)

50 130 200 300 30 136 130 200 250

@ VCE = (V)

5 10 5 30 5 70 5 100 2.8 10 2.8 40 2.8 30 2.8 70 2.8 100

@ IC = (mA)

40 40 40 40 70 70 70 70 70

@ f = (MHz)

NPN NPN NPN NPN NPN NPN NPN

@ VCE = (V)

600 16 54 135 135 135 360

@ IC = (mA)

4.5 500 4.5 3.6 4.5 12 4.5 30 4.5 30 4.5 30 4.5 250

@ f = (MHz)

SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F SOT343F

17 22 25 25 25 21

GUM (typ) (dB)

34 35 36 37 38 33 39 40 41

Polarity

6th 6th 6th 6th 7th 7th 7th 7th 7th

P tot (max) (mW)

BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F

SOT343R SOT343R SOT343R SOT343F SOT343R SOT343R SOT343R

IC (max) (mA)

32 25 26 27 27 27 29

VCEO (max) (V)

Curve

5th 5th 5th 5th 5th 5th 5th

f T (typ) (GHz)

Generation

BFG21W BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W

Package

Type

RF wideband transistors generation 5 - 7

* = check status at 3.1 new products, as this type has not been released for mass production. Bold = Highly recommended product Bold Red = New, highly recommended product

NXP Semiconductors RF Manual 15th edition

79

Products by function

@ IC = (mA)

3 3 3 3

@ f = (MHz)

5 5 15 15

@ VCE = (V)

PL(1dB) (typ) (dBmW)

8.5 8.5 19.4 19.4

@ VCE = (V)

60 60 210 210

@ IC = (mA)

10 10 35 35

@ f = (MHz)

6 6 6 6

14 14 14 14

13 13 12 12 12 13 13 13 11 11 11 11 11 10 10 10 9 10 9 8 10 10 9 9 7 10 9 8 9.5 8 10 10 9.2

NF (typ) (dB)

SOT143R SOT343R SOT143R SOT343R

6 6 6 6 6 6 6 6 6 6 8 8 8 8 8 8 8 6 6 6 6 8 6 6 8 -

@ VCE = (V)

30 30 31 31

5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 -

@ IC = (mA)

4.5 4.5 4.5 4.5

10 10 10 10 10 26 26 26 26 26 34 34 34 34 34 34 34 10 10 26 26 34 10 26 34 -

@ f = (MHz)

BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR

5 5 5 5 5 20 20 20 20 20 40 40 40 40 40 40 40 5 5 20 20 40 5 20 40 -

NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN

NF (typ) (dB)

150 150 500 500 500 300 300 300 500 500 400 400 400 500 500 500 650 500 1000 1,200 300 150 150 300 150 500 150 300 500 360 365 250 150 270

@ VCE = (V)

18 18 18 18 18 70 70 70 70 70 120 120 120 120 120 120 120 18 70 120 50 18 18 70 70 120 18 70 120 50 100 50 50 100

@ IC = (mA)

P tot (max) (mW)

15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 8 8 15 10 15 15 15 15 15 15 15 15 10 10 10 10 10

@ f = (MHz)

IC (max) (mA)

SOT143B 9 SOT143B 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT143B 9 SOT143B 9 SOT143R 9 SOT343N 9 SOT343N 9 SOT343R 9 SOT223 9 SOT363A 9 SOT363A 9 SOT89 9 SOT23 8 SOT23 9 SOT416 9 SOT23 9 SOT416 9 SOT23 9 SOT323 9 SOT323 9 SOT323 9 SOT23 8 SOT23 8 SOT323 8.5 SOT416 9 SOT323 8.5

GUM (typ) (dB)

VCEO (max) (V)

19 19 19 19 19 20 20 20 20 20 21 21 21 21 21 21 21 19 20 21 14 19 19 20 20 21 19 20 21 20 21 20 20 21

Polarity

Curve

4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th 4th

f T (typ) (GHz)

Generation

BFG505 BFG505/X BFG505W BFG505W/X BFG505W/XR BFG520 BFG520/X BFG520/XR BFG520W BFG520W/X BFG540 BFG540/X BFG540/XR BFG540W BFG540W/X BFG540W/XR BFG541 BFM505 BFM520 BFQ540 BFQ67 BFR505 BFR505T BFR520 BFR520T BFR540 BFS505 BFS520 BFS540 PBR941 PBR951 PRF947 PRF949 PRF957

Package

Type

RF wideband transistors generation 4 - 4.5

3.4

RF ICs

3.4.1 RF MMIC amplifiers and mixers RF MMIC amplifiers and mixers selection guide on www.nxp.com/mmics Easy-to-use parametric filters help you to choose the right zRF MMIC for your design. Why choose NXP's RF MMIC amplifiers and mixers `` Reduced RF component count `` Easy circuit design-in `` Reduced board size `` Short time-to-market `` Broad portfolio `` Volume delivery `` Short lead time General purpose wideband amplifiers (50 Ω) @ Type

Package

BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGA2712 BGM1011 BGM1012 BGM1013 BGM1014 BGA2714 BGA2715 BGA2716 BGA2717 Notes:

(1)

SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363

Vs (V) 5 3 3 5 5 5 5 3 5 5 3 5 5 5

Fu(1) Is @-3 dB (mA) (GHz) 12.6 3.6(2) 5.7 1.9 33.3 2.4 24.4 2.8 23.5 3.6 12.3 3.2 25.5 3.6 14.6(2) 27.5 2.1 2.5 21.0 (2) 4.58 2.7 3.3 4.3(2) 3.2 15.9(2) 8.0 3.2

Upper -3 dB point, to gain at 1 GHz.

(2)

NF (dB) 4.8 1.9(2) 4.5 4.9 4.0 3.9 4.7 4.8 4.6 4.2 2.2 2.6 5.3 2.3(2)

Psat (dBm) 2.8 -2.3 13.2(2) 10.5 12.5 4.8 13.8 9.7 14.0 12.9 -3.4 -4.0 11.6 1.4

@ 1 GHz Gain(2) (dB) 13.1 21.8 21.4 23.2(2) 22.7 21.3 30 (2) 20.1 35.5(2) 32.3 20.4 21.7 22.9 23.9

Optimized parameter

(3)

P1dB OIP3 (dBm) (dBm) -0.7 8.3 -9.2 -1.9 12.1 21.9 7.2 18.6 8.3 22 0.2 11 12.2 23 5.6 18 12.0 22.7 11.2 20.5 -7.9 2.1 -8.0 2.3 8.9 22.2 -2.6 10.0

100 MHz 13.0 14.8 20.3 22.4 22.2 20.8 25.0 19.5 35.2 30.0 20.8 13.3 22.1 18.6

Gain(3) (dB) @ 2.2 2.6 GHz GHz 14.1 13.8 17.6 15.0 20.4 17.9 23.2 21.8 23.0 22.1 21.9 21.2 37.0 32.0 20.4 19.9 31.8 29.7 34.1 30.5 20.8 19.4 23.3 22.1 22.8 22.1 25.1 24.0

3.0 GHz 12.7 11.9 15.5 19.3 21.1 19.3 28.0 18.7 26.1 26.4 16.8 20.1 20.8 22.1

Vs (V) 6 4 4 6 6 6 6 4 6 6 4 6 6 6

Limits Is (mA) 20 15 50 34 35 25 35 50 35 30 10 8 25 15

P tot (mW) 200 200 200 200 200 200 200 200 200 200 200 200 200 200

Gain = |S21|2

New general purpose wideband amplifiers (50 Ω) @ Type

Package

BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGA2802 BGA2803 BGA2870

SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363

Vs (V) 3.3 3.3 3.3 3.3 5 5 5 3.3 3 2.5

Fu Is @-3 dB (mA) (GHz) 9.7 >3 12.4 3 16.4 >3 19.6 2.3 7.7 >3 22.7 2.6 15.4 >3 13 2.8 5.8 2.8 16 1.7

NF (dB) 3.4 3.6 3.4 2.8 3.9 3.7 3.6 4.1 3.6 3.7

@ 1 GHz Gain (dB) 20.2 22.1 25.4 31.2 23.3 31.9 23.4 25.8 23.5 31

OIP3 (dBm) 11.5 13.6 18.2 16.1 8.7 20.9 17.7 16 5 12

250 (MHz) 20 22.3 26.2 32 22.9 31.2 23 25 23.6 31

Gain (dB) @ 950 1550 (MHz) (MHz) 20.2 20.6 22.1 23 25.4 25.5 31.2 30.6 23.2 23.9 31.8 32.6 23.3 24 25 25 23.4 23.2 31#

2150 (MHz) 20.6 23.8 25.8 28.7 24 31.4 24.3 25.5 23 -

# = Gain at 750 MHz No output inductor necessary when using the new BGA28xx IF Gain blocks at the output stage.

General purpose low noise wideband amplifiers @ Type

Package

BGA2001 BGA2002^ BGA2003 BGA2011 BGA2012 Notes:

(1)

MSG

SOT343R SOT343R SOT343R SOT363 SOT363 (2)

Adjustable bias

Vs (V) 2.5 2.5 2.5 3 3 (3)

Is (mA) 4 4 10 (2) 15 7

NF (dB) 1.3 1.3 1.8 1.5 -

|S21|2

Bold = Highly recommended product Bold Red = New, highly recommended product ^ = AEC-Q101 qualified (some limitations apply) 80

NXP Semiconductors RF Manual 15th edition

@ 900 MHz Gain IIP3 (dB) (dBm) -7.4 22(1) -7.4 22(1) 24 (1) -6.5 10 19(3) -

@1800 MHz NF Gain IIP3 (dB) (dB) (dBm) 1.3 19.5(1) -4.5 1.3 19.5(1) -4.5 1.8 16(1) -4.8 10 1.7 16(3)

100 (MHz) 20 20 26 24 22

Gain(3) (dB) @ 1 2.6 (GHz) (GHz) 17.1 11.6 17.1 11.6 18.6 11.1 14.8 8 18.2 11.6

3.0 (GHz) 10.7 10.7 10.1 6.5 10.5

Vs (V) 4.5 4.5 4.5 4.5 4.5

Limits Is (mA) 30 30 30 30 15

Ptot (mW) 135 135 135 135 70

SiGe:C LNAs (for e.g. GPS) @ 1.575 GHz

Supply voltage

Type

Package

Supply current

Insertion power gain

Vcc

Icc

|s21|2

NF

PI(1 dB)

IP3i

(V)

(mA)

(dB)

(dB)

(dBm)

(dBm)

Min

Max

Min

Typ

BGU7003 SOT891 2.2 2.85 3 BGU7003W SOT886 2.2 2.85 3 BGU7004^ SOT886 1.5 2.85 BGU7005 SOT886 1.5 2.85 BGU7007 SOT886 1.5 2.85 BGU7008^ SOT886 1.5 2.85 ^AEC-Q101 qualified (some limitations apply)

Max

Min

Typ

Noise figure

Max

Input power at 1 dB gain compression

Vcc = 1.8 V, Min

Typ

Vcc = 1.8 V, Typ

15 16 18.3 20 0.8 15 16 18.3 20 0.8 4.5 16.5* 0.9 -14 4.5 16.5* 0.9 -14 4.8 18** 0.9 -14 4.8 18** 0.9 -14 * = 16.5 dB without jammer / 17.5 dB with jammer

Vcc = 2.5 V, Icc = 5 mA

Input third-order intercept point f1 = 1713 MHz, f2 = 1851 MHz

Vcc = 1.8 V, Min

Vcc = Vcc = 2.85 V, 2.85 V, Typ Min

Vcc = 2.5 V, Icc = 5 mA

Vcc = 1.8 V, Typ

Vcc = 2.85 V, Min

Vcc = 2.85 V, Typ

5 5 5 5

12 12 12 12

-20 0 -20 0 -11 -11 -8 5 9 -11 -11 -8 5 9 -11 -11 -8 5 9 -11 -11 -8 5 9 ** = 18.5 dB without jammer / 19.5 dB with jammer

Type

@

Frequency range

Package

Mode

(MHz) BGU7033

SOT363

40 - 1000

BGU7032

SOT363

40 - 1000

BGU7031 BGU7041

SOT363 SOT363

40 - 1000 40 - 1000

BGU7042

SOT363

40 - 1000

Notes: (1) Gain = Programmable gain (GP)

(2)

GP 10 dB GP 5 dB Bypass GP 10 dB Bypass GP 10 dB GP 10 dB GP 10 dB Bypass

Gain (1)

NF

PL(1dB)

OIP3

FL (2)

RLout

RLin

(mA)

(dB)

(dB)

(dBm)

(dBm)

(dB)

(dB)

(dB)

43 43 4 43 4 43 38 38 3

10 5 -2 10 -2 10 10 10 -2

4.5 6 2.5 4.5 2.5 4.5 4 4 2.5

14 9 10 13 10 13 12 12 -

29 29 29 29 29 29 29 29 29

-0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2 -0.2

12 12 8 12 8 12 12 12 10

18 17 8 18 8 18 21 21 10

VCC

ICC

(V) 5 5 5 5 5 5 3.3 3.3 3.3

Products by function

LNAs for set-top boxes (75 Ω)

Flatness of frequency response = FL

LNAs for wireless infrastructures (50 Ω) Type BGU7051 BGU7052 BGU7053

Package

Vsupply (typ)

@ IC =

@f=

(V) 3.3 3.3 3.3

(mA) 65 65 65

(MHz) 900 1900 2500

SOT650 SOT650 SOT650

Gass (typ) NF (typ) PL(1dB) (typ) OIP3 (typ) (dB) 20.9 20.1 20

(dB) 0.7 0.9 1

IRL

ORL

(dB) 22 20 20

(dB) 15.8 15 15

(dBm) 17.8 18 18

(dBm) 34 35.5 35

@1800 MHz Gain(2) OIP3

PL(1dB)

Gain(2) 2.5

Vs (1)

Limits Is

Ptot

(dBm) 15 17 20

GHz 12 15 15

(V) 6 6 6

(mA) 120 120 120

(mW) 480 480 480

General purpose medium power amplifiers (50 Ω) @ Type BGA6289 BGA6489 BGA6589 Notes:

(1)

@ 900 MHz Gain(2) OIP3

Package

Vs (1)

Is

NF

SOT89 SOT89 SOT89

(V) 4.1 5.1 4.8

(mA) 84 78 81

(dB) 3.5 3.1 3.0

Device voltage without bias resistor.

(2)

(dB) 15 20 22

(dBm) 31 33 33

PL 1 dB

NF

(dBm) 17 20 21

(dB) 3.7 3.3 3.3

(dB) 13 16 17

(dBm) 28 30 32

Gain = |S21|2

General purpose medium power amplifiers for all 400 - 2700 applications (50 Ω ) supply Type BGA7124 BGA7024 BGA7127 BGA7027 BGA7130*

Package SOT908 SOT89 SOT908 SOT89 SOT908

leadless leaded leadless leaded leadless

f (MHz) 400 - 2700 400 - 2700 400 - 2700 400 - 2700 400 - 2700

Vcc

Icc

Typ (V) 5 5 5 5 5

Typ Max (mA) (mA) 130 200 110 180 325 170 -

shutdown control VI(D)L(SHDN) Min (V) 0 0 0

Max (V) 0.7 0.7 0.7

VI(D)H(SHDN) Min (V) 2.5 2.5 2.5

Max (V) Vbias Vbias Vbias

RF performance

RF performance

II(D)L(SHDN)

Typ @ f = 940 MHz

Typ @ f = 1960 MHz

Typ (µA) 4 4 4

Gp PL(1dB) OIP3 NF (dB) (dBm) (dBm) (dB) 22 25 38 5 22 24 38 3 20 28 44 3 19 28 41 3 18 30 45 4

Gp PL(1dB) OIP3 NF (dB) (dBm) (dBm) (dB) 16 24 38 5 16 25 38 4 13 28 43 5 12 28 43 4 12 30 45 4

* = check status at 3.1 new products, as this type has not been released for mass production. Bold = Highly recommended product Bold Red = New, highly recommended product

NXP Semiconductors RF Manual 15th edition

81

VGAs for wireless infrastructures Vsup

Isup

frequency

(V)

(mA)

5

710

Parallel, serial

5

160

(MHz) 700 … 1450 1450 … 2200 700 … 2750 1450 … 2100 2100 … 2750

Parallel, digital

5

240

Package

Control interface

BGA7202

SOT617

Analog

BGA7204

SOT617

BGA7350 BGA7351

SOT617

Type

Gain @ minimum attenuation @ maximum attenuation range Gain OIP3 NF Gain OIP3 NF (dB) (dB) (dBm) (dB) (dB) (dBm) (dB) 23 23 41 7 0 30 30 23 23 41 7 0 30 30 31.5 24 37 6.5 -7.5 19 38 30.5 17 36 6.5 -13.5 10 38 29.5 16 34 7.5 -13.5 10 38 24 18.5 44 6 -5.5 50 30 28 22 45 6 -6 50 34

50 … 250

BGA7350 and BGA7351 are dual, independently controlled, receive IF VGAs on one chip.

2-stage variable gain linear amplifier @ Type BGA2031/1 Notes:

SOT363

Gain = GP, power gain.

(1)

Vs (V) 3

Package

(2)

Frequency Gain(1) Range (dB) 800-2500 24

Is (mA) 51

@ 900 MHz DG(2) P1dB (dB) (dBm) 62 11

ACPR (dBc) 49

@1900 MHz DG(2) P1dB (dB) (dBm) 56 13

ACPR (dBc) 49

@1900 MHz NF Gain(1) OIP3 (dB) (dB) (dBm) 9 6 10

Vs (V) 4

Gain(1) (dB) 23

Vs (V) 3.3

Limits Is (mA) 77

P tot (mW) 200

DG = Gain control range

Wideband linear mixer @ Type BGA2022 Notes:

Vs (V) 3

Package SOT363

Gain = GP, power gain.

(1)

(2)

RF Input Frequency Range 800 - 2500

Is (mA) 6

IF Output Frequency Range 50 - 500

NF (dB) 9

@ 880 MHz Gain(1) OIP3 (dB) (dBm) 5 4

Limits Is (mA) 10

Ptot (mW) 40

DG = Gain control range

3.4.2 Wireless infrastructure ICs Low noise LO generator for wireless infrastructures fIN(REF) Type

VCC

ICC

Noise 1 MHz offset @5.3 GHz

Package

BGX7300*

SOT617

Output buffer (Po)

Typ

Typ

Typ

Typ

(MHz)

(V)

(mA)

(dBc/Hz)

(dBm)

10-160

3.3

140

-131

0

-10

IQ modulator for wireless infrastructures

Type

Output

Voltage gain

Bandwidth of IQ modulator

VCC

ICC

NFL (Output noise floor)

OIP3

GV

(MHz)

(V)

(mA)

(dBm/Hz)

(dBm)

(dB)

650

5

180

-159

27

1.5

Second order spur rejection (2RF-2LO)

VCC

ICC

NFssb (small signal noise figure)

IIP3

Conversion gain

(dBc)

(V)

(mA)

(GHz)

(dB)

(dBm)

(dB)

60

5

380

0.7 - 1.2

10

26

7.5

60

5

380

1.7 - 2.7

10

26

8.5

Package

BGX7100*

SOT616

Dual mixer for wireless infrastructures

Type

Package

BGX7220*

SOT617 SOT617

BGX7221*

Frequency range

* = check status at 3.1 new products, as this type has not been released for mass production.

3.4.3 Satellite LNB RF ICs

Type

TFF1014HN TFF1015HN TFF1017HN TFF1018HN

Package

SOT763-1 SOT763-1 SOT763-1 SOT763-1

Input freq range

I

Gconv

NF

OIP3

LO Freq

Integrated Phase noise density (degrees RMS)

(V)

(mA)

(dB)

(dB)

(dB)

(GHz)

10.7 - 12.75

5

52

36

7

13

9.75 / 10.6

1.5

10.7 - 12.75

5

52

39

7

13

9.75 / 10.6

1.5

10.7 - 12.75

5

52

42

7

13

9.75 / 10.6

1.5

10.7 - 12.75

5

52

45

7

13

9.75 / 10.6

1.5

Bold Red = New, highly recommended product 82

Vcc

NXP Semiconductors RF Manual 15th edition

3.4.4 Low noise LO generators for VSAT and general microwave applications Why choose NXP’s low noise LO generators `` Lowest total cost of ownership `` Alignment-free concept `` Easy circuit design-in `` Improved LO stability Low noise LO generators for VSAT applications VCC

fIN(REF) Type

ICC

PLL phase noise @ N=64, @100 kHz

Package

SOT616 SOT616 SOT616

TFF1003HN TFF1007HN TFF1008HN

PLL

Output buffer

fo(RF)

Po

RLout(RF)

Input Si

Typ

Typ

Max

Typ

Max

Min

(MHz)

(V)

(mA)

(dBc/Hz)

(GHz)

(dBm)

(dB)

(dBm)

50 - 815

3.3

100

-92

12.8 - 13.05

-5

-10

-10

230.46 - 234.38

3.3

100

-104

14.62 - 15

-3

-10

-10

220.91 - 225.2

3.3

130

-104

14.1 - 14.4

-3

-10

-10

Low noise LO generators for general microwave applications Package

fIN(REF)

VCC

ICC

Typ (V) 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3.3

Typ (mA) 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100

PLL phase noise @ N=64 @ 100 kHz @ 10 MHz (dBc/Hz) (dBc/Hz) -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131 -95 -131

Min (GHz) 6.84 7.16 7.49 7.84 8.21 8.59 8.99 9.00 9.41 9.85 10.31 10.79 11.29 11.81 12.36 12.9 13.54 14.17 14.83

PLL fo(RF) Typ (GHz) 7 7.33 7.67 8.02 8.4 8.79 9.2 9.4 9.63 10.07 10.54 11.03 11.55 12.09 12.65 13.2 13.85 14.5 15.18

(MHz) TFF11070HN* SOT616 27 - 448 TFF11073HN* SOT616 28 - 468 TFF11077HN* SOT616 29 - 490 TFF11080HN* SOT616 31 - 513 TFF11084HN SOT616 32 - 537 TFF11088HN SOT616 34 - 562 TFF11092HN SOT616 35 - 588 TFF11094HN SOT616 36-600 TFF11096HN SOT616 37 - 616 TFF11101HN* SOT616 38 - 644 TFF11105HN SOT616 40 - 674 TFF11110HN* SOT616 42 - 706 TFF11115HN SOT616 44 - 738 TFF11121HN* SOT616 46 - 773 TFF11126HN* SOT616 48 - 809 TFF11132HN* SOT616 51 - 846 TFF11139HN* SOT616 53 - 886 TFF11145HN SOT616 55 - 927 TFF11152HN SOT616 58 - 970 Bold = Highly recommended product Bold Red = New, highly recommended product * = to be released on request, please consult your local NXP representative or authorized distributor

3.5

Max (GHz) 7.16 7.49 7.84 8.21 8.59 8.99 9.41 9.6 9.85 10.31 10.79 11.29 11.81 12.36 12.94 13.5 14.17 14.83 15.52

Output buffer Po RLout(RF) Typ Max (dBm) (dB) -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10 -5 -10

Input Si Min (dBm) -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10 -10

Frequency band

Products by function

Type

C C C C. X X X X X X X Ku Ku Ku Ku Ku Ku Ka Ka Ka

RF MOS transistors

3.5.1 JFETs

JFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you to choose the right junction field effect transistor for your design.

Why choose NXP’s JFETs `` Reliable volume supplier `` Short lead time `` Broad portfolio NXP Semiconductors RF Manual 15th edition

83

N-channel junction field-effect transistors for switching Type BSR56 BSR57 BSR58 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 J108 J109 J110 J111 J112 J113 PMBF4391 PMBF4392 PMBF4393

Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54 SOT54 SOT54 SOT23 SOT23 SOT23

VDS

IG

(V) max 40 40 40 25 25 25 40 40 40 25 25 25 40 40 40 40 40 40

(mA) max 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50

I DSS (mA) min max 50 20 100 8 80 80 40 10 20 5 2 80 40 10 20 5 2 50 150 25 75 5 30

CHARACTERISTICS RDSON C rs (Ω) (pF) max min max 25 5 40 5 60 5 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 8 15 12 15 18 15 30 typ.3 50 typ.3 100 typ.3 30 3.5 60 3.5 100 3.5

-Vgsoff (V) min max 4 10 2 6 0.8 4 3 10 2 6 0.5 4 3 10 1 5 0.5 3 3 10 2 6 0.5 4 3 10 1 5 0.5 3 4 10 2 5 0.5 3

t on (ns) typ 4 4 4 13 13 13 4 4 4 13 13 13 -

t off (ns) max 15 15 15

typ 6 6 6 35 35 35 6 6 6 35 35 35 -

max 25 50 100 20 35 50

P-channel junction field-effect transistors for switching Type PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 J174 J175 J176 J177

Package SOT23 SOT23 SOT23 SOT23 SOT54 SOT54 SOT54 SOT54

VDS

IG

(V) max 30 30 30 30 30 30 30 30

(mA) max 50 50 50 50 50 50 50 50

I DSS (mA) min max 20 135 7 70 2 35 1.5 20 20 135 7 70 2 35 1.5 20

CHARACTERISTICS RDSON C rs (Ω) (pF) max min max 85 typ.4 125 typ.4 250 typ.4 300 typ.4 85 typ.4 125 typ.4 250 typ.4 300 typ.4

-Vgsoff (V) min max 5 10 3 6 1 4 0.8 2.25 5 10 3 6 1 4 0.8 2.25

t on (ns) typ 7 15 35 45 7 15 35 45

N-channel junction field-effect transistors for general RF applications Type

Package

VDS

IG

(V) max

(mA) max

I DSS (mA) min max

CHARACTERISTICS Vgsoff |Yfs| (V) (mS) min max min max

DC, LF and HF amplifiers BF245A SOT54 30 10 2 6.5 10 10

1.3 1.3 1.3 1.3

2.5 2.5 2.5 2.5

2.5 4 6 7 1 1.5

4 4.5

t off (ns) max -

typ 15 30 35 45 15 30 35 45

max -

3.5.2 MOSFETs

RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you to choose the right RF MOSFET for your design.

Why choose NXP Semiconductors’ MOSFETs `` Reference designs for TV tuning `` Short lead time `` Broad portfolio `` Smallest packages `` 2-in-1 FETs for tuner applications `` Reliable volume supply `` Best performance MOSFETs for TV tuning N-channel, single MOSFETs for switching Type

Package

BSS83 SOT143 Silicon RF Switches BF1107 SOT23 SOT143B BF11085) SOT143R BF1108R5) BF1108W SOT343 BF1108WR SOT343R BF1118 SOT143B BF1118R SOT143R BF1118W SOT343 BF1118WR SOT343R

(V) max 10

ID (mA) max 50

3 3 3 3 3 3 3 3 3

10 10 10 10 10 10 10 10 10

I DSS (mA) min max -

V(p)GS (V) min max 2(1) 0.1(2) -

100 (3) 100 (3) 100 (3) 100 100 100 100 100 100

CHARACTERISTICS C rs t on (pF) (ns) min max typ max typ.0.6 1

RDSON (Ω) max 45

7(4) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4) 7(4)

20 20 20 20 20 22 22 22 22

-

-

-

t off (ns) typ -

max 5

|S21(on)|2 (dB) max -

-

-

2.5 3 3 3 3 3 3 3 3

-

|S21(off)|2 (dB) min -

MODE

30 30 30 30 30 30 30 30 30

depl. depl. depl. depl depl depl depl depl depl

Products by function

VDS

enh.

Bold = Highly recommended product

N-channel, dual-gate MOSFETs Type

Package

With external bias BF908 SOT143 BF908R SOT143R BF908WR SOT343R BF991 SOT143 BF992 SOT143 BF994S SOT143 BF996S SOT143 BF998 SOT143 BF998R SOT143R BF998WR SOT343R Fully internal bias BF1105 SOT143 BF1105R SOT143R BF1105WR SOT343R BF1109 SOT143 BF1109R SOT143R BF1109WR SOT343R Partly internal bias BF904A SOT143 BF904AR SOT143R BF904AWR SOT343R BF909A SOT143 BF909AR SOT143R BF909AWR SOT343R

CHARACTERISTICS |Yfs| C is C os (mS) (pF) (pF) min max typ typ

VDS

ID

(V) max

(mA) max

12 12 12 20 20 20 20 12 12 12

40 40 40 20 40 30 30 30 30 30

3 3 3 4 4 4 2 2 2

27 27 27 25 20 20 18 18 18

-

-2 -2 -2 -2.5 -1.3 -2.5 -2.5 -2.0 -2.0 -2.5

36 36 36 10 20 15 15 21 21 22

50 50 50 -

3.1 3.1 3.1 2.1 4 2.5 2.3 2.1 2.1 2.1

7 7 7 11 11 11

30 30 30 30 30 30

8 8 8 8 8 8

16 16 16 16 16 16

0.3 0.3 0.3 0.3 0.3 0.3

1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6)

25 25 25 24 24 24

-

7 7 7 7 7 7

30 30 30 40 40 40

8 8 8 12 12 12

13 13 13 20 20 20

0.3 0.3 0.3 0.3 0.3 0.3

1(6) 1(6) 1(6) 1(6) 1(6) 1(6)

22 22 22 36 36 36

30 30 30 50 50 50

I DSX (mA) min max

V(th)gs (V) min max

F @ 800 MHz (dB) typ

VHF

UHF

1.7 1.7 1.7 1.1 2 1 0.8 1.05 1.05 1.05

1.5 1.5 1.5 1 1.2(7) 1(7) 1.8 1 1 1

X X X X X X X X X

X X X X X X X

2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2(9) 2.2(9)

1.2(8) 1.2(8) 1.2(8) 1.3 (8) 1.3 (8) 1.3 (8)

1.7 1.7 1.7 1.5 1.5 1.5

X X X X X X

X X X X X X

2.2 2.2 2.2 3.6 3.6 3.6

1.3 1.3 1.3 2.3 2.3 2.3

2 2 2 2 2 2

X X X X X X

X X X X X X

(2) (7) (3) (8) (4) (9) (5) (1)

(6)

Asymmetrical VGS (th) VGS(th) @ 200 MHz ID C OSS VSG C ig Depletion FET plus diode in one package

NXP Semiconductors RF Manual 15th edition

85

N-channel, dual-gate MOSFETs Type

Package

Partly internal bias BF1100 SOT143 BF1100R SOT143R BF1100WR SOT343R BF1101 SOT143 BF1101R SOT143R BF1101WR SOT343R SOT363 BF1102(R)(10) BF1201 SOT143 BF1201R SOT143R BF1201WR SOT343R BF1202 SOT143 BF1202R SOT143R BF1202WR SOT343R SOT363 BF1203 (11) SOT363 BF1204(10) BF1205C (11)(12)(13) SOT363 BF1205(11)(12)(13)

SOT363

BF1206(11)

SOT363

BF1206F(11)

SOT666

BF1207(11)(13)(14)

SOT363

BF1208 (11)(12)(13)

SOT666

BF1208D(11)(12)(13) SOT666 BF1210 (11)(12)

SOT363

BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF1214(10)

SOT143 SOT143R SOT343 SOT143 SOT143R SOT343 SOT363

BF1218 (11/12/13)

SOT363

VDS

ID

(V) max

(mA) max

min

max

V(th)gs (V) min max

14 14 14 7 7 7 7 10 10 10 10 10 10 10 10 10 6 6 10 7 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6 6

30 30 30 30 30 30 40 301) 301) 301) 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30

8 8 8 8 8 8 12 11 11 11 8 8 8 11 8 8 14 9 8 8 14 9 3 3 13 9 14 9 14 10 14 9 11 11 11 8 8 8 13 14 10

13 13 13 16 16 16 20 19 19 19 16 16 16 19 16 16 24 17 16 16 23 17 6.5 6.5 23 19 24 17 24 20 24 17 19 19 19 16 16 16 23 24 20

0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3

I DSX (mA)

1.2(6) 1.2(6) 1.2(6) 1(6) 1(6) 1(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2(6) 1.2 1.2(6) 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1 1 1 1 1 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1 1

CHARACTERISTICS |Yfs| C is (mS) (pF) min max typ 24 24 24 25 25 25 36 23 23 23 25 25 25 23 25 25 26 28 26 26 33 29 17 17 25 26 26 28 26 25 26 28 25 25 25 28 28 28 25 26 25

33 33 33 35 35 35 40 40 40 35 40 40 41 43 40 40 48 44 32 32 40 41 41 43 41 40 41 43 40 40 40 43 43 43 35 41 40

2.2 2.2 2.2 2.2 2.2 2.2 2.8 (9) 2.6 2.6 2.6 1.7 1.7 1.7 2.6 1.7 1.7 2.2 2 1.8 2.0 2.4 1.7 2.4 1.7 2.2 1.8 2.2 2 2.1 2.1 2.2 2 2.1 2.1 2.1 1.7 1.7 1.7 2.2 2.1 2.1

C os (pF) typ

F @ 800 MHz (dB) typ

VHF

UHF

1.4 1.4 1.4 1.2(8) 1.2(8) 1.2(8) 1.6(8) 0.9 0.9 0.9 0.85 0.85 0.85 0.9 0.85 0.85 0.9 0.85 0.75 0.85 1.1 0.85 1.1 0.85 0.9 0.8 0.9 0.85 0.8 0.85 0.9 0.85 0.9 0.9 0.9 0.9 0.9 0.9 0.9 0.8 0.85

2 2 2 1.7 1.7 1.7 2 1.9 1.9 1.9 1.1 1.1 1.1 1.9 1.1 1.1 1.4 1.4 1.2 1.4 1.6 1.4 1.1 1.0 1.4 1.4 1.4 1.4 1.1 1.4 1.4 1.4 1.3 1.3 1.3 1.1 1.1 1.1 1.4 1.1 1.4

X X X X X X X X X X X X X X X X X X X X X X X X X X X X -

X X X X X X X X X X X X X X X X X X X X X X X X X X X X

Bold = Highly recommended product (1)

(3) (4) (5) (7) (8) (2)

Asymmetrical VGS(th) I D VSG Depletion FET plus diode in one package @200 MHz C OSS

C ig Two equal dual gate MOSFETs in one package (11) Two low noise gain amplifiers in one package (12) Transistor A: fully internal bias, transistor B: partly internal bias (13) Internal switching function (14) Transistor A: partly internal bias, transistor B: fully internal bias (9)

(10)

N-channel, dual gate MOSFETs for set-top-boxes CHARACTERISTICS Package

Type

BF1215 (1)(2)(3)

SOT363

BF1216(1)

SOT363

BF1217

SOT343

VDS

ID

(V) max 6 6 6 6 6

(mA) max 30 30 30 30 30

V(th)gs

IDSX (mA) max 19.5 23 19.5 23 23

(V) min 0.3 0.3 0.3 0.3 0.3

max 1 1 1 1 1

|Yfs|

Cis

COS

(mS) typ 27 27 27 27 27

(pF) typ 2.5 2.5 2.5 2.5 2.5

(pF) typ 0.8 0.8 0.8 0.8 0.8

Two low noise gain amplifiers in one package (2) Transistor A: fully internal bias, transistor B: partly internal bias (3) Internal switching function Bold = Highly recommended product (1)

86

NXP Semiconductors RF Manual 15th edition

F @ 800 MHz (dB) typ 1.9 1.9 1.9 1.9 1.9

X-Mod @ 40 dB gain reduction (dB) typ 107 107 107 107 107

3.6

RF modules

CATV module selection guide on www.nxp.com/catv Easy-to-use parametric filters help you to choose the right CATV module for your design.

Why choose NXP’s RF Modules `` Excellent linearity, stability, and reliability `` Rugged construction `` Extremely low noise `` High power gain `` Low total cost of ownership

Both families will be extended in the following months to cover all of the two specific market segments. C-types (China) `` CATV push-pulls, chapter 3.6.2: BGY588C, BGE788C, CGY888C `` CATV power doublers, chapter 3.6.3: BGD712C, CGD982HCi, CGD985HCi, CGD987HCi `` CATV optical receivers, chapter 3.6.4: BGO807C, BGO807CE

CATV types for Chinese (C-types) and 1 GHz GaAs HFET line-ups New in our CATV hybrid portfolio are two families of products. The C-types are specially designed for the Chinese market, customized for two major governmental projects. The GaAs HFET family includes a complete 1 GHz line-up for high-end applications around the world.

Products by function

1 GHz GaAs HFET high-end hybrids `` CATV push-pulls, chapter 3.6.2 : CGY1032, CGY1041, CGY1043, CGY1047, CGY1049 `` CATV power doublers, chapter 3.6.3: CGD1040Hi, CGD1042Hi, CGD1044Hi, CGD1046Hi, CGD1042H, CGD1044H

3.6.1 CATV push-pulls Type BGY588C BGY585A BGY587 BGY587B BGY588N BGY685A BGY687 BGY785A BGE788C BGY787 BGE787B BGY883 BGE885 BGX885N BGY885A BGY887 CGY888C BGY835C BGY887B BGY888

Frequency range (MHz)

40 - 550

40 - 600

40-750

40 - 870

Gain (dB)

Slope (dB)

FL (dB)

RLIN/RLOUT (dB)

CTB (dB)

33.5 - 35.5 17.7 - 18.7 21.5 - 22.5 26.2 - 27.8 34 - 35 17.7 - 18.7 21 - 22 18 - 19 33.2 - 35.2 21 - 22 28.5 - 29.5 14.5 - 15.5 16.5 - 17.5 16.5 - 17.5 18 - 19 21 - 22 34.5 - 36.5 33.5 - 34.5 28.5 - 29.5 33.5 - 34.5

0.2 - 1.7 0.5 - 2 0.2 - 1.5 0.5 - 2.5 0.5 - 1.5 0.5 - 2.2 0.8 - 2.2 0-2 0.3 - 2.3 0 - 1.5 0.2 - 2.2 0-2 0.2 - 1.2 0.2 - 1.4 0-2 0.2 - 2 1.5 0.5 - 2.5 0.5 - 2.5 0.5 - 2.5

0.5 0.2 0.2 0.4 0.3 0.2 0.2 0.1 0.6 0.2 0.45 0.3 0.5 0.3 0.2 0.2 0.25 0.5 0.5 0.2

16 / 16 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 16 / 16 20 / 20 20 / 20 20 / 20 14 / 14 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20

-57 -59 -57 -57 -57 -55 -54 -54.5 -49 -54.5 -48 -61

X mod (dB) -62 -58 -60 -59 -60 -54 -57.5 -54 -52 -61

-65 -64.5 -65 -60 -60 -63.5

-65 -64.5 -72 -60 -63

CSO (dB)

@ Ch

@ Vo (dBmV)

NF @ fmax (dB)

Itot (mA)

-62 -59 -54 -57 -62 -56 -52 -62 -52 -57.5 -56 -61

77 77 77 77 77 85 85 110 110 110 110 49

44 44 44 44 44 44 44 44 44 44 44 44

-67 -67.5 -63 -55 -60 -64

49 49 112 49 49 49

44 44 44 44 44 44

8 8 7 6.5 6 8.5 6.5 6 8 5 6.5 8.5 8 8 6 5 4 7 6.5 5.5

345 220 220 340 325 240 240 225 325 220 340 235 240 240 225 220 280 340 340 325

3.6.2 CATV push-pulls 1 GHz Gain Slope (dB) (dB) CGY1041 21 - 22.5 1.2 - 2.7 CGY1043 23 - 24.5 1.2 - 2.7 CGY1047 27 - 28.5 1.5 - 2.5 40 - 1003 CGY1049 29 - 31 0.85 - 2.35 CGY1032 32 - 34 1.05 - 2.55 BGY1085A 18 - 19 0-2 Bold Red = New, highly recommended product Bold = Highly recommended product Type

Frequency range

FL 0.9 0.9 0.8 0.85 0.85 0.3

RL IN /RL OUT CTB XMOD CSO 20 / 18 20 / 18 20 / 18 20 / 18 20 / 18 20 / 20

-62 -62 -64 -62 -62 -53

-58 -58 -60 -58 -58 -54

-64 -64 -66 -64 -64 -56

@ Ch 79 NTSC channels + 75 digital channels 79 NTSC channels + 75 digital channels 79 NTSC channels + 75 digital channels 79 NTSC channels + 75 digital channels 79 NTSC channels + 75 digital channels 150

@ Vo NF @ fmax I tot (dBmV) (mA) 44 4.3 265 44 4.2 265 44 4.5 250 44 4.5 265 44 4.4 265 40 7.5 240

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87

3.6.3 CATV power doublers Frequency range (MHz)

Type BGD502 BGD702 BGD702N BGD712 BGD712C BGD704 BGD714 BGD885 BGD802 BGD812 BGD804 BGD814 BGD816L CGD942C CGD944C CGD1040HI CGD1042HI CGD1044HI CGD1046HI CGD1042H CGD1044H CGD982HCI CGD985HCI CGD987HCI

40 - 550

40 - 750

40 - 870

40 - 1003

Gain (dB)

Slope (dB)

FL (dB)

RLIN/RLOUT (dB)

CTB (dB)

X mod (dB)

CSO (dB)

@ Ch

@ Vo (dBmV)

NF @ fmax (dB)

Itot (mA)

18 - 19 18 - 19 18 - 19 18.2 - 18.8 18.2 - 18.8 19.5 - 20.5 20 - 20.6 16.5 - 17.5 18 - 19 18.2 - 18.8 19.5 - 20.5 19.7 - 20.3 21.2 - 21.8 22 - 24 24 - 26 19.5 - 22 22 - 23.5 23.5 - 25.5 26.5 - 28 22 - 24 24 - 26 22 - 24 23.5 - 25.5 26 - 28

0.2 - 2.2 0.2 - 2 0.2 - 2 0.5 - 1.5 0.5 - 1.5 0-2 0.5 - 1.5 0.2 - 1.6 0.2 - 2 0.4 - 1.4 0.2 - 2 0.5 - 1.5 0.5 - 1.5 1-2 1-2 0.5 - 2 0.5 - 2 0.5 - 2 0.7 - 2.2 1.5 1 0.5 - 2 0.5 - 2 0.7 - 2

0.3 0.2 0.25 0.35 0.35 0.2 0.35 0.5 0.2 0.5 0.2 0.5 0.5 0.5 0.5 1 1 1 1 0.5 0.5 1 1 1

20 / 20 20 / 20 20 / 20 23 / 23 17 / 17 20 / 20 23 / 23 20 / 20 20 / 20 25 / 23 20 / 20 25 / 24 22 / 25 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 20 20 / 21 20 / 21 20 / 20 20 / 20 20 / 20

-65 -59 -58 -62 -62 -58 -61

-68 -64 -62 -63 -63 -62

-62 -63 -58 -63 -63 -61 -62

77 110 110 112 112 110 112

44 44 44 44 44 44 44

-56.5 -57 -54 -56 -55 -66 -66 -70 -70 -70 -75 -75 -75 -66 -66 -66

-61 -62 -62 -61 -58 -66 -66 -66 -65 -64 -68 -67 -67 -68 -68 -68

-64.5 -58 -60.5 -57 -56 -66 -66 -76 -75 -75 -70 -76 -76 -69 -69 -66

129 132 129 132 132 98 98 79 79 79 79 79 79 98 98 98

44 44 44 44 44 48 48 58.4 58.4 58.4 56.4 59 59 48 48 48

8 6.5 8.5 7 7 6.5 7 8 6.5 7.5 6.5 7.5 7.5 3.5 3.5 5.5 5.5 5 5 5 5 5.5 5 5

415 425 435 395 410 425 395 450 395 395 395 395 360 450 450 440 440 440 450 450 450 440 440 440

3.6.4 CATV optical receivers Frequency range (MHz)

Type BGO807 BGO807C BGO807CE BGO827

40 - 870

S (V/W)

Slope (dB)

FL (dB)

RLOUT (dB)

IMD3 (dB)

IMD2 (dB)

@ fmeasured (MHz)

@ Pi(opt) (mW)

NF @ fmax (dB)

Itot (mA)

Remark

800 800 800 800

0-2 0-2 0-2 0-2

1 1 1 1

11 11 11 11

-71 -71 -69 -73

-55 -54 -53 -57

854.5 854.5 854.5 854.5

1 1 1 1

8.5 8.5 8.5 8.5

205 205 205 205

FC and SC available FC and SC available FC and SC available FC and SC available

3.6.5 CATV reverse hybrids Type BGY68 BGY66B BGY67 BGY67A BGR269

Frequency range (MHz) 5 - 75 5 - 120 5 - 200

Gain (dB)

Slope (dB)

FL (dB)

RLIN/RLOUT (dB)

CTB (dB)

X mod (dB)

29.2 - 30.8 24.5 - 25.5 21.5 - 22.5 23.5 - 24.5 34.5 - 35.5

-0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.5 -0.2 - 0.6

0.2 0.2 0.2 0.2 0.5

20 / 20 20 / 20 20 / 20 20 / 20 20 / 20

-68 -66 -67 -67 -57

-60 -54 -60 -59 -50

CSO (dB)

-66

@ Ch

@ Vo (dBmV)

NF @ fmax (dB)

Itot (mA)

4 14 22 22 28

50 48 50 50 50

3.5 5 5.5 5.5 5.5

135 135 215 215 160

Bold Red = New, highly recommended product Bold = Highly recommended product NOTES: This table is for reference only. For full data please refer to the latest datasheet. For availability please check the NXP Sales office.

Description `` Frequency range: minimum and maximum frequency in MHz at which data are characterized (@ Ch / @ Vo) `` FL is flatness of frequency response `` The number of channels and the output voltage at which CTB, Xmod, CSO, IMD2 and IMD3 are characterized, are @ fmax `` S is minimum responsivity of optical receivers

88

NXP Semiconductors RF Manual 15th edition

3.7

RF power transistors

NEW : RF power transistor selection guide on www.nxp.com/rfpower Easy-to-use parametric filters help you to choose the right RF power transistor for your design.

3.7.1 Base station transistors http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/basestations/index.html#preview Device naming conventions RF power base stations transistors 22 L S

-45 P R B N G gullwing-shaped leads specialty option: current sense lead enhanced ruggedness push-pull device P1dB power option: earless package option: low thermal resistivity operating frequency (in 100MHz; maximum) G: standard LDMOS LDMOS technology generation F: LDMOS transistor in ceramic package C: LDMOS transistor in air cavity plastic (ACP) package D: fully integrated Doherty amplifier M: MMIC P: Plastic L: high frequency power transistor B: semiconductor die made of Si

Products by function

B L F 6 G

Why choose NXP‘s RF power transistors for base stations: L F 6 G technology 22 L S -45 P (generation R B N G `B` Leading 6, 7 and 8 of LDMOS) gullwing-shaped leads `` Highest efficiency specialty option: current sense lead `` Best ruggedness enhanced ruggedness push-pull device `` Advanced Doherty amplifier designs P1dB power option: earless package `` Industry’s first 3.8 GHz resistivity Doherty option: low thermal operating frequency (in 100MHz; maximum) `` Industry's firstLDMOS 3 way, 900 MHz Doherty G: standard LDMOS technology generation `` Inudstry's first 50V, 600W, F: LDMOS transistor in ceramic package single package Doherty C: LDMOS transistor in air cavity plastic (ACP) package D: fully integrated Doherty amplifier M: MMIC module L: high frequency power transistor B: semiconductor die made of Si

NXP offers complete line-ups of RF power transistors operating from 800 MHz right up to 3.8 GHz for base stations, covering all cellular technologies (MC-GSM/EDGE, TDMA, (TD-S)CDMA, W-CDMA/UMTS) and WiMAX infrastructures.

3.7.1.1 Function

0.7 - 1.0 GHz line-up Type

Driver BLF6G21-10G MMIC driver BLM6G10-30(G) BLF6G10L-40BRN Driver/final BLF6G10(S)-45 BLP7G10S-140P(G) BLF6G10(LS)-160RN BLF8G10LS-160 BLF6G10-200RN Final BLF6G10LS-200RN BLF7G10LS-250 BLF6G10L(S)-260PRN BLF8G10LS-300P

3.7.1.2 Function Driver Final

WCDMA performance

fmin (MHz)

fmax (MHz)

CW P1dB (W)

VDS (V)

PL (W)

BO (dB)

η D (%)

Gp (dB)

1 920 700 700 700 700 700 700 688 920 700 700

2200 960 1000 1000 1000 1000 1000 1000 1000 960 1000 1000

10 30 40 45 140 160 160 200 200 250 260 300

28 28 28 28 28 32 28 28 28 28 28 28

2 2 2.5 1 32 32 40 40 40 60 40 110

11.5 11.8 12 16.5 8 7 7 7 7 7 8.1 7

31 11.5 15 8 32 27 29 28.5 28.5 30 26.5 47

19.3 29 23 23 19 22.5 22 20 20 19 22 16

fmin (MHz)

fmax (MHz)

CW P1dB (W)

VDS (V)

PL (W)

BO (dB)

η D (%)

1 1450 1450 1450 1450

2200 1550 1550 1550 1550

10 40 200 250 300

28 28 28 28 28

0.7 2.5 50 60 85

11.5 12.0 6.0 6.2 5.5

15 13 29 33 31

1.4 - 1.7 GHz line-up Type BLF6G21-10G BLF6G15L-40BRN BLF7G15LS-200 BLF6G15L-250PBRN BLF7G15LS-300P

Test signal

Package

1-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA 2-C WCDMA IS95

SOT538A SOT822-1 SOT1112A SOT608B SOT1204 SOT502 SOT502B SOT502A SOT502B SOT502B SOT539B SOT539B

Gp (dB)

Test signal

Package

18.5 22 19.5 18.5 18

2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA

SOT538A SOT1112A SOT502B SOT1110A SOT539B

WCDMA performance

NXP Semiconductors RF Manual 15th edition

89

3.7.1.3 Function

Driver

Final

3.7.1.4 Function

Driver

Final

3.7.1.5 Function Driver

Final

3.7.1.6 Function Driver Final

90

1.8 - 2.0 GHz line-up

Test signal performance

fmin (MHz)

fmax (MHz)

CW P1dB (W)

VDS (V)

PL (W)

BO (dB)

η D (%)

Gp (dB)

Test signal

Package

1 1800 1800 1800 2010 2010 1800 1800 1800 1800 1800 1800 1800 1800 1800 1800 1800 1800 1805 1805 1805 1805 1805 1805

2200 2000 2000 2000 2025 2025 2000 2000 2000 2000 2000 2000 2000 2000 2050 2000 2000 2000 1990 1990 1880 1880 1880 1880

10 40 45 45 50 50 75 75 90 90 110 110 140 140 160 180 180 180 200 200 230 230 250 250

28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 32 30 30 28 28 30 30 28 28

0.7 2.5 2.5 2.5 8 8 29.5 29.5 84 84 25 25 35.5 60 45 50 40 40 55 55 50 50 70 70

11.5 12.0 12.6 12.6 8.0 8.0 4.1 4.1 0.3 0.3 6.4 6.4 6.0 3.7 5.5 5.6 6.5 6.5 5.6 5.6 6.6 6.6 5.5 5.5

15 15 14 14 43 43 37.5 37.5 54 54 32 32 30 41 34 29.5 27 27 33 33 29.5 29.5 35 35

18.5 18.8 19.2 19.2 14.5 14.5 19 19 19 19 19 19 16.5 17.5 18 18 17.2 17.2 18 18 16.5 16.5 18 18

2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA TD-SCDMA TD-SCDMA GSM EDGE GSM EDGE GSM EDGE GSM EDGE 2-c WCDMA 2-c WCDMA 2-c WCDMA GSM EDGE 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA

SOT538A SOT608A SOT608A SOT608B SOT1130A SOT1130B SOT502A SOT502B SOT1121A SOT1121B SOT502A SOT502B SOT502B SOT1121B SOT1121 SOT539A SOT502A SOT502B SOT502A SOT502B SOT539A SOT539B SOT539A SOT539B

Type

fmin (MHz)

fmax (MHz)

CW P1dB (W)

VDS (V)

PL (W)

BO (dB)

η D (%)

Gp (dB)

Test signal

Package

BLF6G21-10G BLP7G22-10 BLM6G22-30 BLM7G22S-60PG BLF6G22L-40BN BLF6G22L(S)-40P BLF6G22(S)-45 BLD6G22L(S)-50 BLF6G22LS-75 BLF7G22LS-100P BLF6G22LS-100 BLF7G22L(S)-130 BLF7G22L(S)-160 BLF6G22(LS)-180PN BLF6G22(LS)-180RN BLF7G22L(S)-200 BLF7G22L(S)-250P

10 10 2100 2000 2000 2110 2000 2110 2000 2000 2000 2000 2000 2000 2000 2110 2110

2200 2200 2200 2200 2200 2170 2200 2170 2200 2200 2200 2200 2200 2200 2200 2170 2170

10 10 30 60 40 40 45 50 75 100 100 130 160 180 180 200 250

28 28 28 28 28 28 28 28 28 28 28 28 28 32 30 28 28

0.7 0.7 2 3 2.5 13.5 2.5 8 17 20 25 30 43 50 40 55 70

11.5 11.5 11.8 11.5 12.0 4.7 12.6 8.0 6.4 7.0 6.0 6.4 5.7 5.6 6.5 5.6 5.5

15 15 9 10 16 30 13 40 30.5 28 29 32 30 27.5 25 31 30

18.5 17 29.5 29 19 19 18.5 14 18.7 18 18.5 18.5 18 17.5 16 18.5 17

2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA TD-SCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA 2-c WCDMA

SOT538A SOT1179 SOT834-1 tbd SOT1112A SOT1121B3 SOT608B SOT1130B SOT502B SOT1121B3 SOT502B SOT502B SOT502B3 SOT539B SOT502B SOT502B SOT539B

Test signal

Package

IS-95 1-C WCDMA IS-95 IS-95 IS-95 IS-95 IS-95 IS-95 IS-95 IS-95

SOT1121 SOT1121 SOT1121 SOT502 SOT502 SOT502 SOT502 SOT539 SOT1246 SOT1246

Test signal

Package

N-CDMA N-CDMA N-CDMA N-CDMA

SOT975 SOT608 SOT502 SOT502

Type BLF6G21-10G BLF6G20-40 BLF6G20-45 BLF6G20S-45 BLD6G21L-50 BLD6G21LS-50 BLF6G20-75 BLF6G20LS-75 BLF7G20L-90P BLF7G20LS-90P BLF6G20-110 BLF6G20LS-110 BLF6G20LS-140 BLF7G20LS-140P BLF7G21L(S)-160P BLF6G20-180PN BLF6G20-180RN BLF6G20LS-180RN BLF7G20L-200 BLF7G20LS-200 BLF6G20-230PRN BLF6G20S-230PRN BLF7G20L-250P BLF7G20LS-250P

2.0 - 2.2 GHz line-up

Test signal performance

2.3- 2.7 GHz line-up

Test signal performance

Type

fmin (MHz)

fmax (MHz)

CW P1dB (W)

VDS (V)

PL (W)

BO (dB)

η D (%)

Gp (dB)

BLF7G27L(S)-75P BLF6G27LS-40P BLF7G27L(S)-90P BLF7G24L(S)-100 BLF7G27L(S)-100 BLF7G24L(S)-140 BLF7G27L(S)-140 BLF7G27L(S)-150P BLF7G24LS-160P BLF7G27LS-200P

2300 2500 2500 2300 2500 2300 2500 2500 2300 2600

2700 2700 2700 2400 2700 2400 2700 2700 2400 2700

75 40 90 100 100 140 140 150 160 200

28 28 28 28 28 28 28 28 28 28

12 20 16 14 25 30 20 30 30 42

8.0 3.0 7.5 8.5 6.0 6.7 8.5 7.0 7.3 7.0

26 37 27.5 24 24 22 22 27 27 25

17 17.5 17.5 18 17.5 17 17 16.5 16.5 16.5

3.5 - 3.8 GHz line-up

Test signal performance

Type

fmin (MHz)

fmax (MHz)

CW P1dB (W)

VDS (V)

PL (W)

BO (dB)

η D (%)

Gp (dB)

BLF6G38-10(G) BLF6G38(LS)-25 BLF6G38(LS)-50 BLF6G38(LS)-100

3400 3400 3400 3400

3600 3800 3800 3600

10 25 50 100

28 28 28 28

2 4.5 9 18.5

7.0 7.4 7.4 7.3

20 24 23 21.5

14 15 14 13

NXP Semiconductors RF Manual 15th edition

Power LDMOS Doherty designs

Freq band (MHz)

PPEAK (dBm)

POUT-AVG (dBm)

728-821 MHz 790-821 55.5 790-821 57.2 728-768 58 869-960 MHz 869-894 52 869-894 52.7 920-960 55.1 920-960 56.2 920-960 57.3 925-960 57.7 869-894 58 925-960 58.9 1476-1511 MHz 1526-1555 56.6 1476-1511 58.1 1476-1511 58.6 1805-1880 MHz (DCS) 1805-1880 52.5 1805-1880 55 1805-1880 55.4 1805-1880 55.5 1805-1880 56.1 1805-1880 57.5 1805-1880 57.9 1805-1880 58.2 1805-1880 58.6 1930-1990 MHz (PCS) 1930-1990 53 1930-1990 54.3 1930-1990 55.2 1930-1990 55.5 1930-1990 56 1930-1990 56 1930-1990 57 1930-1990 58 1930-1990 58.2 1930-1990 58.5 1880-2025 MHz (TD-SCDMA) 1805-2050 52 2010-2025 47 1880-2025 50 2010-2025 50 1880-1920 52.5 2110-2170 MHz (UMTS / LTE) 2110-2170 47 2110-2170 48.5 2110-2170 54.7 2110-2170 54.9 2110-2170 55 2110-2170 55 2110-2170 55.5 2110-2170 55.9 2110-2170 56 2110-2170 56.5 2110-2170 57 2110-2170 57.2 2110-2170 58 2110-2170 58 2300-2400 MHz (WiBRO / LTE) 2300-2400 49.5 2300-2400 55 2500-2700 MHz (WiMAX / LTE) 2570-2620 49.5 2500-2700 50 2500-2700 50.3 2500-2600 52 2600-2700 52 2600-2700 52 2500-2700 52.5 2620-2690 55.2 2545-2575 55.3 3300-3800 MHz (WiMAX) 3400-3600 51

VDS (V)

Gain (dB)

Drain Eff. (%)

Type

Main transistor

Peak transistor

47 49.5 50

28 32 32

19 20 20.5

42 42 47

SYM SYM SYM

1/2 BLF6G10L(S)-260PRN BLF6G10LS-200RN BLF6G10LS-200RN

1/2 BLF6G10L(S)-260PRN BLF6G10LS-200RN BLF6G10LS-200RN

44 44.5 47.1 48 49.3 49.7 50 50.9

28 28 28 28 30 28 32 32

20 15 20.5 18.5 16 20.5 20.5 22

48 50 44 40 50 40 46 47

SYM 3-WAY SYM SYM ASYM SYM / MPPM SYM SYM / MMPP

BLF6G10S-45 BLF6G10S-45 1/2 BLF6G10L(S)-260PRN BLF6G10-135RN BLF8G10LS-160 BLF6G10L(S)-260PRN BLF6G10-200RN BLF6G10L(S)-260PRN

BLF6G10S-45 2x BLF6G10S-45 1/2 BLF6G10L(S)-260PRN BLF6G10-135RN BLF7G10LS-250 BLF6G10L(S)-260PRN BLF6G10-200RN BLF6G10L(S)-260PRN

48.6 49.6 50.6

28 28 32

18.4 16 16.5

42 42 42

SYM ASYM SYM

BLF7G15LS-200 BLF7G15LS-200 BLF6G15LS-250PBRN

BLF7G15LS-200 BLF7G15LS-300P BLF6G15LS-250PBRN

44.5 47 47.5 47 48.1 49.5 50 50 51

28 32 31 28 30 30 32 28 28

16 16 16.3 16 15.2 16 15.5 16 16

44 38 49 41 48 42 37 42 47.6

SYM SYM ASYM SYM ASYM SYM SYM / MMPP SYM 3-WAY

1/2 BLF7G21LS-160P 1/2 BLF6G20-230PRN BLF7G20LS-90P 1/2 BLF7G20L(S)-250P BLF7G20LS-90P BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P BLF7G20LS-200

1/2 BLF7G21LS-160P 1/2 BLF6G20-230PRN BLF7G21LS-160P 1/2 BLF7G20L(S)-250P BLF7G20LS-200 BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P 2x BLF7G20LS-200

45 47.4 47.2 47.5 48 48 49 50 50 50.5

28 28 28 28 31 28 30 32 28 30

16.5 16.7 16 14.5 15.3 14.8 17.2 15.5 16 15.7

40 48.2 40 46 38 45 41 37 40 43

SYM SYM SYM ASYM SYM ASYM SYM SYM SYM 3-WAY

BLF6G20-75 BLF6G20LS-110 1/2 BLF7G20LS-250P BLF7G20LS-90P BLF6G20LS-140 BLF7G20LS-140P BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P BLF7G20LS-200

BLF6G20-75 BLF6G20LS-110 1/2 BLF7G20LS-250P BLF7G20LS-200 BLF6G20LS-140 BLF7G20LS-200 BLF7G20LS-200 BLF6G20-230PRN BLF7G20LS-250P 2x BLF7G20LS-200

44.5 39 42 42 44.5

28 28 28 28 28

15.2 14.4 17 17.2 16

41.5 41 46 47.2 44

SYM SYM SYM SYM SYM

1/2 BLF7G21LS-160P BLD6G21L(S)-50 1/2 BLF7G20L(S)-90P 1/2 BLF7G20L(S)-90P 1/2 BLF7G21LS-160P

1/2 BLF7G21LS-160P BLD6G21L(S)-50 1/2 BLF7G20L(S)-90P 1/2 BLF7G20L(S)-90P 1/2 BLF7G21LS-160P

39 40.5 46.5 47 47 47 46.4 47.9 48 48.5 49 49.2 50 50

28 28 28 28 28 28 28 28 28 28 32 28 32 32

13 17.2 16.5 17 17 15.5 15 17.3 15 16.2 14.5 16 15 17.5

38 46 43 43 43 38 43 42 48 41 41 47 40 40

SYM SYM SYM SYM SYM SYM ASYM SYM 3-WAY SYM ASYM 3-WAY SYM SYM

BLD6G22L(S)-50 1/2 BLF6G22L-40P BLF6G22LS-100 BLF7G22L(S)-130 1/2 BLF7G22LS-250P BLF6G22L(S)-130 BLF7G22L(S)-130 BLF7G22LS-160 BLF7G22L(S)-130 BLF7G22L(S)-200 BLF6G22-100 BLF7G22LS-160 BLF6G22-180PN BLF7G22LS-250P

BLD6G22L(S)-50 1/2 BLF6G22L-40P BLF6G22LS-100 BLF7G22L(S)-130 1/2 BLF7G22LS-250P BLF6G22L(S)-130 BLF7G22L(S)-200 BLF7G22LS-160 2x BLF7G22L(S)-130 BLF7G22L(S)-200 BLF6G22-180PN 2x BLF7G22L(S)-160 BLF6G22-180PN BLF7G22LS-250P

42 47.5

28 28

14.6 15.2

44 44

SYM ASYM

1/2 BLF7G27L(S)-75P BLF7G24LS-100

1/2 BLF7G27L(S)-75P BLF7G24LS-140

42 42 42.3 44 44 44 44.5 47.2 47.3

28 28 28 28 28 28 28 30 28

15 15 14.5 14 14 14 14 15 15

43 37.5 39 40 40 40 38 41 41

SYM SYM SYM ASYM ASYM ASYM SYM ASYM ASYM

1/2 BLF7G27L(S)-75P BLF6G27-45 1/2 BLF7G27LS-90P BLF6G27-45 BLF6G27-45 BLF6G27-45 1/2 BLF7G27LS-150P BLF7G27LS-100 BLF7G27LS-100

1/2 BLF7G27L(S)-75P BLF6G27-45 1/2 BLF7G27LS-90P 2x BLF6G27-45 2x BLF6G27-45 BLF6G27(LS)-100 1/2 BLF7G27LS-150P BLF7G27LS-140 BLF7G27LS-140

43

28

11.5

32

SYM

BLF6G38-50

BLF6G38-50

NXP Semiconductors RF Manual 15th edition

Products by function

3.7.1.7

91

3.7.2 Broadcast / ISM (industrial, scientific, medical) RF power transistors http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/broadcast_ism/index.html#preview Why choose NXP’s RF power transistors for broadcast / ISM applications: `` Highest power `` Best-in-class design support `` Best ruggedness `` Very low thermal resistance design for unrivalled reliability `` Best broadband performance NXP's leading LDMOS technologies, together with advanced package concepts, enable power amplifiers that deliver best-in-class performance. We offer the industry’s highest power and best ruggedness for all broadcast technologies. Our portfolio includes transistors for Ultra High Frequency (UHF), Very High Frequency (VHF) and High Frequency (HF) applications and covers ISM frequency bands.

3.7.2.1 0-1000 MHz (UHF/VHF/HF/ISM) LDMOS line-up Function

Type

Driver final Driver Driver/final Driver

Final

BLP10H605 BLP10H610 BLP15M705 BLP15M710 BLF178P BLF571 BLF642 BLF871(S) BLF645 BLF881(S) BLF573(S) BLF573P BLF647P BLF574 BLF278XR BLF888A(S) BLF578 BLF578XR

fmin (MHz)

fmax (MHz)

P1dB (W)

η D (%)

Gp (dB)

VDS (V)

10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 470 10 10 10 10

1000 1000 1500 1500 110 500 1400 1000 1400 1000 500 500 1500 500 500 860 500 500 500 500

5 10 5 10 1000 20 35 100 100 140 300 500 150 600 500 600 1000 1200 1000 1200

65 65 57 57 75 70 63 60 56 49 70 70 55 73 73 58 75 71 75 71

20 20 18 18 26 27,5 19 21 18 21 27,2 26 18 27 27 20 26 24 26 24

50 50 32 32 50 50 32 40 32 50 50 50 32 50 50 50 50 50 50 50

Test signal

Package

CW CW CW CW CW CW CW CW CW 2-tone class AB CW CW CW CW CW pulsed class AB CW pulsed class AB CW pulsed class AB

SOT1179 SOT1179 SOT1179 SOT1179 SOT539 SOT467C SOT467C SOT467 SOT540A SOT467 SOT502B SOT1121 SOT1121 SOT539A SOT1240 SOT539 SOT539A SOT539A

3.7.2.2 UHF 470-860 MHz LDMOS line-up Function

Type BLF642

Driver

BLF871(S) BLF881(S) BLF884P BLF878 BLF879P

Final

BLF888 BLF888A(S)

fmin (MHz)

fmax (MHz)

P1dB (W)

η D (%)

Gp (dB)

VDS (V)

470 470 470 470 470 470 470 470 470 470 470 470 470 470 470

860 860 860 860 860 860 860 860 860 860 860 860 860 860 860

17,5 35 100 24 120 30 75 300 75 95 250 110 250 120 600

19 19 47 33 49 31 33 32 32 32 46 31 46 31 58

48 63 21 22 21 21 21 21 21 20 19 19 19 19 20

32 32 42 42 50 50 50 42 42 42 50 50 50 50 50

Test signal 2-tone class AB CW 2-TONE DVB-T 2-tone class AB DVB-T DVB-T CW DVB-T DVB-T 2-TONE DVB-T 2-TONE DVB-T pulsed class AB

3.7.2.3 2.45 GHz ISM LDMOS transistor line-up Function Driver MMIC

Final

92

Type BLP25M74 BLP25M710 BLM2425M720 BLP2425M8140 BLF2425M7L(S)140 BLF2425M6L(S)180P BLF2425M7L(S)200 BLF2425M7L(S)250P

fmin (MHz)

fmax (MHz)

P1dB (W)

η D (%)

Gp (dB)

10 10 2400 2400 2400 2400 2400 2400

2500 2500 2500 2500 2500 2500 2500 2500

4 10 20 140 140 180 200 250

53 52 40 55 55 55 52 50

19 19 26,5 18 19 19 18,5 18

NXP Semiconductors RF Manual 15th edition

Test signal

Package

CW CW CW CW CW CW CW CW

SOT1179 SOT1179 SOT1138 SOT1179 SOT502 SOT539 SOT502 SOT539

Package SOT467C SOT467C SOT467C SOT539A SOT979A SOT1121 SOT979A SOT539

3.7.3 Microwave LDMOS RF power transistors http://www.nxp.com/products/mosfets/rf_power_transistors_ldmos/microwave_ldmos/index.html#preview Device naming conventions RF power microwave transistors B L S 6 G 2731 S -120 G option: gullwing shaped leads P1dB power S: earless package P: pallet frequency band (in 100MHz; here: 2700-3100) G: standard LDMOS (≤ 28V) H: high voltage LDMOS (50V) LDMOS technology generation A: avionics frequency band operation L: L-band frequency operation S: S-band frequency operation L: high frequency power transistor B: semiconductor die made of Si

Products by function

Why choose NXP’s microwave RF power transistors `` High gain `` High efficiency `` Highest reliability `` Improved pulse droop and insertion phase `` Improved ruggedness - overdrive without risk to +5 dB `` Reduces component count and helps simplify L- and S-band radar design `` Uses non-toxic, RoHS-compliant packages

3.7.3.1 Avionics LDMOS transistors Function

Type

Driver

BLL6H0514-25 BLA6G1011-200R(G) BLA6H0912-500 BLA6H1011-600 BLA6H0912-1000

Final

fmin (MHz)

fmax (MHz)

P1dB (W)

η D (%)

Gp (dB)

VDS (V)

Test signal

Package

500 1030 960 1030 960

1400 1090 1215 1090 1215

25 200 500 600 1000

50 65 50 52 50

19 20 17 19 17

50 28 50 48 50

pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF

SOT467C SOT502A SOT634A SOT539A SOT539A

fmin (MHz)

fmax (MHz)

P1dB (W)

η D (%)

Gp (dB)

VDS (V)

Test signal

Package

500 500 1200 1200 960

1400 1400 1400 1400 1215

25 130 250 500 1000

58 50 55 50 50

21 17 17 17 17

50 50 50 50 50

pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF

SOT467C SOT1135B SOT502B SOT539A SOT539A

3.7.3.2 L-band LDMOS transistors Function

Type

Driver

BLL6H0514-25 BLL6H0514L(S)-130 BLL6H1214L(S)-250 BLL6H1214-500 BLA6H0912-1000

Final

3.7.3.3 S-band LDMOS transistors Function Driver

Final

Type

fmin (MHz)

fmax (MHz)

P1dB (W)

η D (%)

Gp (dB)

VDS (V)

Test signal

Package

BLS6G2731-6G BLS6G3135(S)-20 BLS6G2735L(S)-30 BLS6G2731(S)-120 BLS6G3135(S)-120 BLS6G2731S-130 BLS6G2933S-130 BLS7G2933S-150 BLS6G2731P-200 BLS6G2933P-200 BLS7G2729L(S)-350P BLS7G3135L(S)-350P

2700 3100 2700 2700 3100 2700 2900 2900 2700 2900 2700 3100

3100 3500 3500 3100 3500 3100 3300 3300 3100 3300 2900 3500

6 20 30 120 120 130 130 150 200 220 350 350

33 45 50 48 43 47 47 47 45 45 50 45

15 15.5 14 13.5 11 12.5 12.5 13.5 11 11 13.5 12

32 32 32 32 32 32 32 32 32 32 32 32

pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF pulsed RF

SOT975C SOT608 SOT1135 SOT502B SOT502 SOT922-1 SOT922-1 SOT922-1 pallet pallet SOT539 SOT539

NXP Semiconductors RF Manual 15th edition

93

3.8

High-speed data converters

As a leader in high performance mixed-signal IC products, NXP offers an extensive selection of high-speed data converters, with digital interfaces including JESD204A (in CGV TM product line), as well as CMOS LVCMOS and LVDS DDR interfaces. NXP's high-speed DACs and ADCs deliver best-in-class converter core performance and ultra-stable dynamic performance across a broad temperature range. NXP is the only semiconductor vendor to offer high-speed data convertors, small signal RF building blocks, and RF power amplifiers, to enable system-level integration across the full radio transceiver chain.  ore information on NXP’s high-speed converters: M `` Fast track your design with NXP’s high-speed converters http://www.nxp.com/campaigns/fasttrackyourdesign/ `` All literature: http://www.nxp.com/dynamic/literature/tid-50935_tree-product/data.html

3.8.1 High-speed ADCs Family

Description

ADC1613D series ADC1613S series ADC1610S series ADC1415S series ADC1413D series ADC1413S series ADC1412D series ADC1410S series ADC1215S series ADC1213D series ADC1213S series ADC1212D series ADC1210S series ADC1207S080 ADC1206S series ADC1115S125 ADC1113D125 ADC1113S125 ADC1112D125 ADC1015S series ADC1010S series ADC1006S series ADC1005S060 ADC1004S series ADC1003S series ADC1002S020 ADC0808S series ADC0804S series ADC0801S040

Dual 16-bit ADC up to 65/80/105/125 Msps Single 16-bit ADC up to 65/80/105/125 Msps Single 16-bit ADC up to 65/80/105/125 Msps Single 14-bit ADC up to 65/80/105/125 Msps Dual 14-bit ADC up to 65/80/105/125 Msps Single 14-bit ADC up to 65/80/105/125 Msps Dual 14-bit ADC up to 65/80/105/125 Msps Single 14-bit ADC up to 65/80/105/125 Msps Single 12-bit ADC up to 65/80/105/125 Msps Dual 12-bit ADC up to 65/80/105/125 Msps Single 12-bit ADC up to 65/80/105/125 Msps Dual 12-bit ADC up to 65/80/105/125 Msps Single 12-bit ADC up to 65/80/105/125 Msps Single 12-bit ADC 80 Msps Single 12-bit ADC up to 40/55/70 Msps Single 11-bit ADC up to 125 Msps Dual 11-bit ADC up to 125 Msps Single 11-bit ADC up to 125 Msps Dual 11-bit ADC up to 125 Msps Single 10-bit ADC up to 65/80/105/125 Msps Single 10-bit ADC up to 65/80/105/125 Msps Single 10-bit ADC up to 55/70 Msps Single 10-bit ADC 60 Msps Single 10-bit ADC 30/40/50 Msps Single 10-bit ADC 30/40/50 Msps Single 10-bit ADC 20 Msps Single 8-bit ADC up to 125/250 Msps Single 8-bit ADC up to 30/40/50 Msps Single 8-bit ADC 40 Msps

3.8.2 High-speed DACs Family

Description

DAC1408D series Dual 14-bit DAC up to 650/750 Msps DAC1405D series Dual 14-bit DAC up to 650/750 Msps DAC1403D160 Dual 14-bit DAC 160 Msps DAC1401D125 Dual 14-bit DAC 125 Msps DAC1208D series Dual 12-bit DAC up to 650/750 Msps DAC1205D series Dual 12-bit DAC up to 650/750 Msps DAC1203D160 Dual 12-bit DAC 160 Msps DAC1201D125 Dual 12-bit DAC 125 Msps DAC1008D series Dual 10-bit DAC up to 650/750 Msps DAC1005D series Dual 10-bit DAC up to 650/750 Msps DAC1003D160 Dual 10-bit DAC 160 Msps DAC1001D125 Dual 10-bit DAC 125 Msps Bold Red = New, highly recommended product 94

NXP Semiconductors RF Manual 15th edition

Digital interface Input TTL/ LVDS/ Supply Power dissipation SFDR SNR LVCMOS CGV™ Package buffer CMOS DDR voltage (V) per channel (mW) (dBc) (dBFS) • • • •

•

• • • •

• • •

•

• • • • •

• • •

• • •

• •

•

•

• • • • • •

• •

• • •

• • • • • • • •

•

1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 /3.0/5.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 /3.0/5.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 5.0 3.3 / 5.0 1.8 / 3.0/5.0 1.8 / 3.0 1.8 / 3.0 1.8 / 3.0 1.8 /3.0/5.0 1.8 / 3.0 3.3 / 5.0 5.0 5.0 5.0 3 to 5.25 1.8 / 3.3 5.0 2.7 to 5.5

635 690 630 840 635 690 610 630 840 635 690 610 630 840 550 840 635 690 610 840 630 550 312 175 235 53 215 175 30

89 87 89 87 87 87 87 87 87 87 87 87 87 90 70 87 87 86 87 87 87 71 72 72 70 72 56 72 59

71.6 71.4 71.6 71.4 71.4 71.4 71.4 71.4 69.6 69.6 71.4 69.6 69.6 71 64 66.2 66.2 71,4 66.2 61.6 61.6 59 58 58 58 60 48 49 47

HVQFN56 8x8 HVQFN32 7x7 HVQFN40 6x6 HVQFN40 6x6 HVQFN56 8x8 HVQFN32 7x7 HVQFN64 9x9 HVQFN40 6x6 HVQFN40 6x6 HVQFN56 8x8 HVQFN32 7x7 HVQFN64 9x9 HVQFN40 6x6 HTQFP48 7x7 QFP44 HVQFN40 6x6 HVQFN56 8x8 HVQFN32 7x7 HVQFN56 8x8 HVQFN40 6x6 HVQFN40 6x6 QFP44 SSOP28 SSOP28 SSOP28 LQFP32 HTQFP48 7x7 SSOP28 SSOP20

Digital interface LVCMOS

CGV™ •

• • • • • • • • • • •

Supply Power dissipation SFDR voltage (V) per channel (mW) (dBc) 1.8 / 3.3 1.8 / 3.3 3.3 3.3 1.8 / 3.3 1.8 / 3.3 3.3 3.3 1.8 / 3.3 1.8 / 3.3 3.3 3.3

700 435 210 95 700 435 210 95 700 435 210 95

76 77 80 88 76 80 77 65 76 77 80 65

Interpolation 2x, 4x, 8x 2x, 4x, 8x 2x 2x, 4x, 8x 2x, 4x, 8x 2x 2x, 4x, 8x 2x, 4x, 8x 2x -

Package HVQFN64 9x9 HTQFP100 14x14 HTQFP80 12x12 LQFP48 HVQFN64 9x9 HTQFP100 14x14 HTQFP80 12x12 LQFP48 HVQFN64 9x9 HTQFP100 14x14 HTQFP80 12x12 LQFP48

4. Design support This chapter will guide you trough the available tools, documents, materials and links to ease the design-in of our products. Streamline your RF design with leading RF EDA software Electronic design automation (EDA) software lets RF engineers predict the behavior of a design by performing simulations. That helps them reduce the number of design cycles, lower design risk, and make better RF component choices. NXP's RF small signal portfolio is supported by a number of EDA toolkits, including Ansoft Designer RF, AWR Microwave Office, and Agilent Advanced Design System (ADS). Installation manual area available on the NXP web site at www.nxp.com/models.

4.1 S-parameters

4.2 Simulation models

S-parameters help you to simulate the behavior of NXP devices using your own adjustments for voltage, current, and more.

4.2.1 Spice models

BF67 BFG135 BFG198 BFG21W BFG25A/X BFG31 BFG35 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505 BFG520 BFG520W BFG540

Wideband transistors BFG540W BFG541 BFG590 BFG591 BFG93A BFG94 BFG97 BFM505 BFM520 BFQ149 BFQ18A BFQ19 BFQ67 BFQ67W BFR106 BFR505 BFR520 BFR540 BFR92A BFR92AW BFR93A

BFR93AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25 BFT25A BFT92 BFT92W BFT93 BFT93W BFU725F/N1 BRF505T PBR941 PBR951 PRF947 PRF949 PRF957

BF1211 BF1211R BF1211WR

FETs BF1212 BF1212R BF1212WR

BF511 BF513 BF862

BGA2001 BGA2003 BGA2711 BGA2748 BGA2771 BGA2776 BGA2709 BGU7003 BGA2712 BGM1011

MMICs BGM1012 BGM1013 BGM1014 BGM2011 BGA2715 BGA2716 BGA2717 BGA2011 BGA2012 BGA6289

BGA6489 BGA6589 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866

Wideband transistors, FETs & Varicaps diodes For all types in the below tables there are Spice models available. In the interactive PDF of the RF manual all these type numbers are hyperlinks that take you directly to the corresponding product information page on the NXP website. Scroll down to find the Spice models on each product information page. BFG10 BFG10/X BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW/X BFG31 BFG310/XR BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505 BFG505/X

Wideband transistors BFG505W/X BFM505 BFG520 BFM520 BFG520/X BFQ149 BFG520/XR BFQ18A BFG520W BFQ19 BFG520W/X BFQ540 BFG540 BFQ67 BFG540/X BFQ67W BFG540/XR BFR106 BFG540W BFR505 BFG540W/X BFR505T BFG540W/XR BFR520 BFG541 BFR540 BFG590 BFR92A BFG590/X BFR92AW BFG591 BFR93A BFG67 BFR93AW BFG67/X BFS17 BFG92A/X BFS17A BFG93A BFS17W BFG94 BFS25A BFG97 BFS505

BF862 BF904

BF908

BB145B BB149 BB149A

BB156 BB179 BB179B

FETs BF909

Varicap diodes BB201 BB202 BB207

Design support

Wideband transistors, FETs & MMICs For all types in the below tables there are S-parameters available. In the interactive PDF of the RF manual all these type numbers are hyperlinks that take you directly to the corresponding product information page on the NXP website. Scroll down to find the S-parameters on each product information page.

Spice models help you to optimize performance and make it easier to know which external components impact performance.

BFS520 BFS540 BFT25A BFT92 BFT92W BFT93 BFT93W BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F BFU730F BFU760F BFU790F PBR941 PBR951 PRF947 PRF949 PRF957

BF998

BB208-02

4.2.2 Interactive datasheet Quickly and easily generate custom datasheets for our wideband RF transistors based on your specific operating conditions (http://www.nxp.com/models). NXP Semiconductors RF Manual 15th edition

95

4.2.3

Simulation models for RF power devices

For easy design-in, NXP provides fully physics-based, electrothermal models for the RF power transistors. These models are available for Advanced Design System (ADS)® from Agilent and for Microwave Office (MWO)® from Applied Wave Research (AWR). Newly developed models per product are based on the best-inclass RFLDMOS model, developed by NXP Research, a recognized leader in physics-based models. This concept yields highly reliable simulation results over a wide range of electrical conditions. The standard models fully support DC, AC, s-parameter (small signal), harmonic balance (large signal) and time-domain simulations. NXP RF power models allow designers to assess the performance of complex PA systems at an early stage of the development process. The available models come with all necessary libraries and documentation, and can be downloaded from NXP’s website. Product type BLA6G1011-200R BLA6H0912-500 BLA6H1011-600 BLF369 BLF3G21-6 BLF571 BLF573 BLF573S BLF574 BLF578 BLF645 BLF6G10-135RN BLF6G10-200RN BLF6G10-45 BLF6G10L-260PRN BLF6G10L-40BRN BLF6G10LS-135RN BLF6G10LS-200RN BLF6G10LS-260PRN BLF6G10S-45 BLF6G15L-250PBRN BLF6G15L-40BRN BLF6G20-180RN BLF6G20-230PRN BLF6G20-45 BLF6G20LS-180RN BLF6G20S-230PRN BLF6G20S-45 BLF6G21-10G BLF6G22-180RN BLF6G22-45 BLF6G22LS-180RN BLF6G22S-45 BLF6G27-10 BLF6G27-10G BLF6G27-135 BLF6G27-45 BLF6G27-75 BLF6G27L-40P BLF6G27LS-135 BLF6G27LS-40P BLF6G27LS-75 BLF6G27S-45 BLF6G38-10 BLF6G38-100 BLF6G38-10G BLF6G38-25 BLF6G38-50 BLF6G38LS-100 BLF6G38LS-50 BLF6G38S-25 BLF7G15L-300P BLF7G15LS-200 BLF7G20L-200 96

ADS MWO Product type model model Y Y BLF7G20L-250P Y Y BLF7G20L-90P Y Y BLF7G20LS-140P Y N BLF7G20LS-200 Y N BLF7G20LS-250P Y Y BLF7G20LS-90P Y Y BLF7G21L-160P Y Y BLF7G21LS-160P Y Y BLF7G22L-130 Y Y BLF7G22L-130N Y Y BLF7G22L-160 Y Y BLF7G22L-200 Y N BLF7G22L-250P Y Y BLF7G22LS-130 Y N BLF7G22LS-160 Y N BLF7G22LS-200 Y Y BLF7G22LS-250P Y N BLF7G24L-100 Y N BLF7G24L-140 Y Y BLF7G24LS-100 Y N BLF7G24LS-140 Y N BLF7G27L-100 Y N BLF7G27L-140 Y N BLF7G27L-150P Y Y BLF7G27L-200PB Y N BLF7G27L-75P Y N BLF7G27L-90P Y Y BLF7G27LS-100 Y Y BLF7G27LS-140 Y N BLF7G27LS-150P Y Y BLF7G27LS-200PB Y N BLF7G27LS-75P Y Y BLF7G27LS-90P Y N BLF871 Y Y BLF871S Y N BLF878 Y Y BLF881 Y N BLF881S Y N BLF888 Y N BLF888A Y N BLF888AS Y N BLL6H0514-25 Y Y BLL6H0514L-130 Y N BLL6H0514LS-130 Y N BLL6H1214-500 Y Y BLL6H1214L-250 Y Y BLL6H1214LS-250 Y Y BLM6G22-30 Y N BLS6G2731-6G Y Y BLS6G2731S-130 Y Y BLS6G3135-120 Y N BLS6G3135-20 Y N BLS6G3135S-120 Y N BLS6G3135S-20

NXP Semiconductors RF Manual 15th edition

ADS MWO model model Y N Y N Y N Y N Y N Y N Y N Y N Y Y Y Y Y N Y N Y N Y Y Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y N Y Y Y Y Y Y Y Y Y Y Y N Y Y Y Y Y Y Y Y Y Y Y N Y Y Y Y Y N Y N Y Y Y Y Y N Y Y Y N

4.3 Application notes Multiple RF applications are featured in the RF Manual’s first chapter including application diagrams, recommended types and product highlights. More in-depth application information is available in the second chapter. And on the NXP website we have additional application notes available in the RF section (http://www.nxp.com/products/all_appnotes/).

4.4 Demo boards



BGA2001 demo board

4.4.1 RF transistor, MMIC & IC demo boards RF transistor, MMIC & IC demo boards are available (although limited) via your local NXP representative or authorized distributor (look at the last chapter: Web Links and Contacts).

BFU690F BFU725F/N1 BGA2001 BGA2003 BGA2011 BGA2012 BGA2031 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2748 BGA2771 BGA2776



RF small signal demo boards BGA2800 BGM1014 BGA2801 BGU7003 BGA2815 BGU7005 BGA2816 BGU7007 BGA2850 BGU7030F BGA2865 BGU7031 BGA2866 BGU7032 BGA6289 BGU7033 BGA6489 BGU7041 BGA6589 BGU7042 BGA6589 TFF1003HN BGA7024 TFF11070HN BGA7124 TFF11073HN BGM1011 TFF11077HN BGM1012 TFF11080HN BGM1013 TFF11084HN

BGU7005 demo board

TFF11088HN TFF11092HN TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN

BGA7124 demo board

Demo boards are available (although limited) via your local NXP representative (see the last chapter: Web Links and Contacts).

Type ADC1213S series ADC1215S series

ADC1410S series

ADC1412D series

ADC1413D series ADC1413S series ADC1415S series

ADC1610S series

ADC1613D series ADC1613S series

4.4.3 High-speed converter demo boards High-speed converter demo boards are available via your local NXP representative or authorized distributor. ADC demo boards Type ADC0801S040 ADC0804S series ADC0808S series ADC1002S020 ADC1003S series ADC1004S series ADC1005S060 ADC1006S series ADC1010S series

ADC1015S series

ADC1112D125

ADC1113D125 ADC1113S125 ADC1115S125 ADC1206S series ADC1207S080 ADC1210S series ADC1212D series

ADC1213D series

Description Demo board; both CMOS and TTL outputs Demo boards; both CMOS and TTL outputs Demo boards; CMOS outputs Demo board; both CMOS and TTL outputs Demo boards; both CMOS and TTL outputs Demo boards; both CMOS and TTL outputs Demo board; both CMOS and TTL outputs Demo boards; both CMOS and TTL outputs Demo boards with both CMOS and LVDS outputs Demo boards CMOS version; SPI, regulators and CMOS buffer on board Demo boards LVDS output with SAMTEC connector; SPI, regulators on board Demo boards with both CMOS and LVDS outputs Demo boards; CMOS version; SPI, regulators and CMOS buffer on board; Demo boards; SPI, regulators on board; LVDS output with SAMTEC connector Demo board; CMOS version; SPI, regulators and CMOS buffer on board Demo board; SPI, regulators on board; LVDS output only SAMTEC connector Demo board; VIRTEX 5 FPGA on board Demo board; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo board; VIRTEX 5 FPGA on board Demo board; both CMOS and LVDS Demo board; CMOS version; SPI, regulators and CMOS buffer on board Demo board; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; both CMOS and TTL outputs Demo board; both CMOS and TTL outputs Demo boards with both CMOS and LVDS Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; VIRTEX 5 FPGA on board Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo board; Lattice ECP3 FPGA on board

Description Demo boards; VIRTEX 5 FPGA on board Demo boards with both CMOS and LVDS Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards with both CMOS and LVDS Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; VIRTEX 5 FPGA on board Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo board; Lattice ECP3 FPGA on board Demo boards; VIRTEX 5 FPGA on board Demo boards; both CMOS and LVDS outputs Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; CMOS version; SPI, regulators and CMOS buffer on board Demo boards; SPI, regulators on board; LVDS output only SAMTEC connector Demo boards; VIRTEX 5 FPGA on board Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo boards; VIRTEX 5 FPGA on board

DAC demo boards Type DAC1001D125 DAC1003D160 DAC1005D series DAC1201D125 DAC1203D160 DAC1205D series DAC1401D125 DAC1403D160 DAC1405D series DAC1205D series DAC1408D series

DAC1208D series

DAC1008D series KIT ECP3

Description Demo board; LVCMOS inputs Demo board; LVCMOS inputs Demo boards; SPI, LVCMOS inputs Demo board; LVCMOS inputs Demo board; LVCMOS inputs Demo boards; SPI, LVCMOS inputs Demo board; LVCMOS inputs Demo board; LVCMOS inputs Demo boards; SPI, LVCMOS inputs Demo board; LVCMOS inputs Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo boards; Virtex 5 FPGA Demo boards with Lattice ECP3 FPGA Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo boards with Virtex 5 FPGA Demo boards; compliant with Lattice, Altera, Xilinx FPGA boards through specific connectors Demo boards with Virtex 5 FPGA ADC1413D080+DAC1408D650 with Lattice ECP3 FPGA demo kit

4.5 Samples For samples of released or non-released products, please contact your local NXP sales representative or authorized distributor. NXP sales offices and distributors: http://www.nxp.com/profile/sales.

4.6 Datasheets Datasheets are available on the NXP website: www.nxp.com.

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Design support

4.4.2 RF power transistor demo boards

4.7 Design-in support If you need design-in support, please contact your local NXP sales representative or authorized distributor.

4.8 Interactive selection guides On the NXP website you can find parametric filters to help you choose the right device for your design. Please go to the product category page of your choice and click on selection guide.

NEW : i-Phone App RF calculator tool available Check out the App store. Android app to be released in Q3.

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5. Cross-references & replacements NXP cross-references: http://www.nxp.com/search/ NXP end-of-life: http://www.nxp.com/products/eol/

5.1 Cross-references: manufacturer types versus NXP types In alphabetical order of manufacturer type Abbreviations: Base station Broadcasts BS diode CATV OR CATV PD CATV PPA CATV PPA/HG CATV RA FET Microwave MMIC Varicap WB trs 1-4 WB trs 5-7

Base station power transistors Broadcast power transistors Band switch diode CATV optical receiver CATV power doubler CATV push-pull amplifier CATV push-pull amplifier high gain CATV reverse amplifier Field-effect transistor Microwave power transistors Monolithic microwave integrated circuit Varicap diode Wideband transistor 1-4 generation Wideband transistor 5-7 generation Manufacturer

NXP type

Product family

Manufacturer type

Manufacturer

NXP type

Product family

10500 10502 PTF 081301F - 130 W AH125 SXB-4089 0910-150M 0910-300M 0910-60M 0912-45 1011LD200 1011LD300 1015MP 1035MP 1214-30 1214-32L 1SS314 1SS356 1SS381 1SS390 1SV172 1SV214 1SV214 1SV215 1SV228 1SV231 1SV232 1SV233 1SV234 1SV239

Microsemi Microsemi Infineon Triquint RFMD Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Toshiba Rohm Toshiba Rohm Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Sanyo Toshiba

BLA6H0912-500 BLA6H0912-500 BLF881 BGA7127 BGA7127 BLF871 BLF878 BLF878 BLL6H0514-25 BLA6G1011-200R BLA6G1011-200R BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLL6H0514-26 BA591 BA591 BA277 BA891 BAP50-04 BB149 BB149A BB153 BB201 BB152 BB148 BAP70-03 BAP64-04 BB145B

Microwave Microwave Broadcast MMIC MMIC Broadcast Broadcast Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave BS diode BS diode BS diode BS diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode Varicap

1SV241 1SV246 1SV247 1SV248 1SV249 1SV250 1SV251 1SV252 1SV254 1SV263 1SV264 1SV266 1SV267 1SV269 1SV270 1SV271 1SV278 1SV279 1SV282 1SV282 1SV283 1SV283 1SV284 1SV288 1SV290 1SV294 1SV305 1SV307 1SV308

Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Sanyo Sanyo Sanyo Sanyo Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Sanyo Toshiba Toshiba Toshiba

BAP64-02 BAP64-04W BAP70-02 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BAP50-04W BB179 BAP50-02 BAP50-04W BAP50-03 BAP50-04 BB148 BB156 BAP50-03 BB179 BB179 BB178 BB187 BB178 BB187 BB156 BB152 BB182 BAP70-03 BB202 BAP51-03 BAP51-02

PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap PIN diode PIN diode PIN diode PIN diode Varicap Varicap PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode Varicap PIN diode PIN diode

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1SV322 1T362 1T362A 1T363A 1T368A 1T369 1T379 1T397 1T399 1T402 1T403 1T404A 1T405A 1T406 1T408 2729-125 2729-170 2731-100M 2931-150 2F1G20DS 2F1G20DS 2F1G20P 2F1G22DS 2F1G22DS 2F1G22DS 2F1G23P 2F1G23P 2F1G24D 2F1G24D 2F1G24DS 2F722DS 2F8718P 2F8719DS 2F8720DS 2F8723P 2F8734P 2N3330 2N3331 2N4220 2N4856 2N4857 2N4858 2N5114 2N5115 2N5116 2N5432 2N5433 2N5434 2N5457 2N5458 2N5459 2N5653 2N5654 2SC4094 2SC4095 2SC4182 2SC4184 2SC4185 2SC4186 2SC4226 2SC4227 2SC4228 2SC4247 2SC4248 2SC4315 2SC4320 2SC4321 2SC4325 2SC4394 2SC4536 2SC4537 2SC4592 2SC4593 2SC4703 2SC4784 2SC4807

Toshiba PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC PEC Microsemi Microsemi Microsemi Microsemi RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC RFHIC Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard NEC NEC NEC NEC NEC NEC NEC NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba NEC Renesas Renesas Renesas NEC Renesas Renesas

BB202LX BB149 BB149A BB153 BB148 BB152 BB131 BB152 BB148 BB179B BB178 BB187 BB187 BB182 BB187 BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 CGD1042H CGD1040Hi CGY1041 CGD1042H CGD1042Hi CGD982HCi CGY1043 CGY1041 CGD1044Hi CGD985HCi CGD1044H BGD816L BGY885A BGD812 BGD814 BGY887 CGY888C J176 J176 BF245A BSR56 BSR57 BSR58 J174 J175 J175 J108 J108 J109 BF245A BF245A BF245B J112 J111 BFG520/XR BFG520/XR BFS17W BFS17W BFS17W BFR92AW PRF957 BFQ67W BFS505 BFR92AW BFR92AW BFG520/XR BFG520/XR BFQ67W BFS505 PRF957 BFQ19 BFR93AW BFG520/XR BFS520 BFQ19 BFS505 BFQ18A

Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Microwave Microwave Microwave Microwave CATV PD CATV PD CATV PP CATV PD CATV PD CATV PD CATV PP CATV PP CATV PD CATV PD CATV PD CATV PD CATV PP CATV PD CATV PD CATV PP CATV PP FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4

2SC4842 2SC4899 2SC4900 2SC4901 2SC4988 2SC5011 2SC5012 2SC5065 2SC5085 2SC5087 2SC5088 2SC5090 2SC5092 2SC5095 2SC5107 2SC5463 2SC5593 2SC5594 2SC5623 2SC5624 2SC5631 2SC6023 2SJ105GR 2SK163-K 2SK163-L 2SK163-M 2SK163-N 2SK210BL 2SK370BL 2SK370GR 2SK370V 2SK381 2SK43 2SK435 2SK508 3SK290 AH118 AH118 AH215 BA592 BA595 BA595 BA597 BA885 BA892 BA892-02V BA892-02V BA892V-02V-GS08 BA895 BAR14-1 BAR15-1 BAR16-1 BAR17 BAR50-02L BAR50-02V BAR50-02V BAR50-02V BAR50-03W BAR60 BAR61 BAR63 BAR63-02L BAR63-02L BAR63-02V BAR63-02W BAR63-03W BAR63-05 BAR63-05W BAR63V-02V-GS08 BAR63V-05W-GS08 BAR64-02LRH BAR64-02V BAR64-02W BAR64-03W BAR64-04 BAR64-04W

Toshiba Renesas Renesas Renesas Renesas NEC NEC Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Renesas Renesas Renesas Renesas Renesas Sanyo Standard Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Triquint Triquint Triquint Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon

BFG540W/XR BFS505 BFG520/XR BFS520 BFQ540 BFG540W/XR BFG540W/XR PRF957 PRF957 BFG520/XR BFG540W/XR BFS520 BFG520/XR BFS505 BFS505 BFQ67W BFG410W BFG425W BFG410W BFG425W BFQ540 BFG424W J177 J113 J113 J113 J113 PMBFJ309 J109 J109 J109 J113 J113 J113 PMBFJ308 BF998WR BGA7124 BGA7024 BGA7130 BA591 BAP51-03 BAP70-03 BAP70-03 BAP70-03 BA891 BA277 BA891 BA891 BAP70-02 BAP70-03 BAP70-03 BAP70-03 BAP50-03 BAP50LX BAP50-02 BAP50-03 BAP50-05 BAP70-02 BAP50-03 BAP50-03 BAP63-03 BAP63-02 BAP63LX BAP63-02 BAP63-02 BAP63-03 BAP63-05W BAP63-05W BAP63-02 BAP63-05W BAP64LX BAP64-02 BAP64-02 BAP64-03 BAP64-04 BAP64-04W

WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 5-7 FET FET FET FET FET FET FET FET FET FET FET FET FET FET MMIC MMIC MMIC BS diode PIN diode PIN diode PIN diode PIN diode BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode

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Product family

Manufacturer type

Manufacturer

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BAR64-05 BAR64-05W BAR64-06 BAR64-06W BAR64V-02V-GS08 BAR64V-04-GS08 BAR64V-05-GS08 BAR64V-06-GS08 BAR64V-06W-GS08 BAR65-02L BAR65-02V BAR65-02W BAR65-03W BAR65V-02V-GS08 BAR66 BAR67-02W BAR67-03W BAT18-04 BB304C BB304M BB305C BB305M BB403M BB501C BB501M BB502C BB502M BB503C BB503M BB535 BB545 BB555 BB565 BB601M BB639 BB639 BB640 BB641 BB659 BB664 BB664 BB669 BB814 BB831 BB833 BB835 BBY58-02V BBY65 BF1005R BF1005S BF1005SR BF1009S BF1009SR BF1009SW BF2030 BF2030 BF2030 BF2030R BF2030R BF2030R BF2030W BF2030W BF2030W BF2040 BF2040R BF2040W BF244A BF244B BF244C BF247A BF247B BF247C BF256A BF256B BF256C BF5020

Infineon Infineon Infineon Infineon Vishay Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Infineon Infineon Infineon Infineon Renesas Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Standard Standard Standard Standard Standard Standard Infineon

BAP64-05 BAP64-05W BAP64-06 BAP64-06W BAP64-02 BAP64-04 BAP64-05 BAP64-06 BAP64-06W BAP65LX BAP65-02 BAP65-02 BAP65-03 BAP65-02 BAP1321-04 BAP1321-02 BAP1321-03 BAT18 BF1201WR BF1201R BF1201WR BF1201R BF909R BF1202WR BF1202R BF1202WR BF1202R BF1202WR BF1202R BB149 BB149A BB179B BB179 BF1202 BB148 BB153 BB152 BB152 BB178 BB178 BB187 BB152 BB201 BB131 BB131 BB131 BB202 BB202 BF1105R BF1105 BF1105R BF1109 BF1109R BF1109WR BF1101 BF1211 BF1212 BF1101R BF1211R BF1212R BF1101WR BF1211WR BF1212WR BF909 BF909R BF909WR BF245A BF245B BF245C J108 J108 J108 BF245A BF245B BF245C BF1212

PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode FET FET FET FET FET FET FET FET FET FET FET Varicap Varicap Varicap Varicap FET Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET

BF5020R BF5020W BF5030W BF770A BF771 BF771W BF772 BF775 BF775A BF775W BF851A BF851B BF851C BF994S BF996S BF998 BF998 BF998-GS08 BF998R BF998R BF998R-GS08 BF998RW BF998W BFG135A BFG193 BFG194 BFG196 BFG19S BFG235 BFP180 BFP181 BFP181T-GS08 BFP182 BFP183 BFP183R BFP183T-GS08 BFP183TW-GS08 BFP193 BFP193W BFP196T-GS08 BFP196TR-GS08 BFP196TRW-GS08 BFP196TW-GS08 BFP196W BFP280 BFP405 BFP420 BFP450 BFP67-GS08 BFP67R-GS08 BFP740 BFP740F BFP81 BFP92A-GS08 BFP93A BFP93A-GS08 BFQ193 BFQ19S BFQ67-GS08 BFR106 BFR180 BFR180W BFR181 BFR181T-GS08 BFR181TW-GS08 BFR181W BFR182 BFR182W BFR183 BFR183T-GS08 BFR183TW-GS08 BFR183W BFR193 BFR193TW-GS08 BFR193W BFR196T-GS08

Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Vishay Vishay Infineon Vishay Vishay Vishay Infineon Vishay Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Vishay Infineon Infineon Infineon Vishay Vishay Infineon Infineon Vishay Vishay Vishay Vishay Infineon Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Vishay Infineon Vishay Infineon Infineon Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Infineon Infineon Vishay Vishay Infineon Infineon Vishay Infineon Vishay

BF1212R BF1212WR BF909WR BFR93A PBR951 BFS540 BFG540 BFR92A BFR92A BFR92AW BF861A BF861B BF861C BF994S BF996S BF998 BF998 BF998 BF998R BF998R BF998R BF998WR BF998WR BFG135 BFG198 BFG31 BFG541 BFG97 BFG135 BFG505/X BFG67/X BFG67/X BFG67/X BFG520/X BFG520/XR BFG520/X BFG520W/X BFG540/X BFG540W/XR BFG540/X BFG540/XR BFG540W/XR BFG540W/X BFG540W/XR BFG505/X BFG410W BFG425W BFG480W BFG67/X BFG67/X BFU725F BFU725F BFG92A/X BFG92A/X BFG93A/X BFG93A/X BFQ540 BFQ19 BFQ67W BFR106 BFR505 BFS505 BFR520 BFR520 BFS520 BFS520 PBR941 PRF947 PBR951 PBR951 PRF957 PRF957 PBR951 PRF957 PRF957 BFR540

FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET FET FET FET FET WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 5-7 WB trs 5-7 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4

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BFR196TW-GS08 BFR35AP BFR92AL BFR92AW-GS08 BFR92P BFR92W BFR93A BFR93AL BFR93AW BFR93AW-GS08 BFR93-GS08 BFS17-GS08 BFS17-GS08 BFS17L BFS17P BFS17W BFS17W-GS08 BFS481 BFS483 BFT92 BFT93 BG3123 BG3123R BG3130 BG3130R BG3430R BG5120K BG5130R BG5412K BG5412K BGA615 BGA715 BGA915 BIC701C BIC701M BIC702C BIC702M BIC801M BSR111 BSR112 BSR113 BSR174 BSR175 BSR176 BSR177 CA901 CA901A CA922 CA922A CMM6004-SC CMM6004-SC CMY91 CMY91 CXE1089Z CXE1089Z D10040180GT D10040180GTH D10040200GT D10040200GTH D10040200P1 D10040200PH1 D10040220GT D10040220GTH D10040230P1 D10040230PH1 D10040240GT D10040240GTH D10040250GT D10040250GTH D10040270GT D10040270GTH D10040270GTL D5540185 D7540185 D7540200 D8640185

Vishay Infineon Freescale Vishay Infineon Infineon Infineon Freescale Infineon Vishay Vishay Vishay Vishay Freescale Infineon Infineon Vishay Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Renesas Renesas Renesas Renesas Renesas Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Mimix Mimix Infineon Infineon RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD Standard Standard Standard Standard

BFS540 BFR92A BFR92A BFR92AW BFR92A BFR92AW BFR93A BFR93A BFR93AW BFR93AW BFR93A BFS17 BFS17A BFS17 BFS17A BFS17W BFS17W BFM505 BFM520 BFT92 BFT93 BF1203 BF1203 BF1214 BF1214 BF1207 BF1210 BF1206 BF1205C BF1208D BGU7007 BGU8007 BGU8007 BF1105WR BF1105R BF1105WR BF1105R BF1105 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BGX885N BGX885N BGD885 BGD885 BGA7124 BGA7024 BGA2022 BGA2022 BGA6489 BGA6589 CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1042H CGD1044H CGD1044H CGD1044H CGD1044H CGD1044H CGD1044H CGD1044H BGD502 BGD702 BGD704 BGD802

WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 FET FET FET FET FET FET FET FET FET MMIC MMIC MMIC FET FET FET FET FET FET FET FET FET FET FET FET CATV PPA CATV PPA CATV PD CATV PD MMIC MMIC MMIC WB trs 1-4 MMIC MMIC CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD

D8740180GT D8740180GTH D8740220GT D8740220GTH D8740240GT D8740240GTH D8740250GT D8740250GTH D8740270GT D8740270GTH D8740320GT D8740320GTH DME500 EC2C03C F2046 F2048 F2247 FSD273TA FSD273TA HBFP0405 HBFP0420 HBFP0450 HMC454ST89E HSC277 HSMP3800 HSMP3802 HSMP3804 HSMP3810 HSMP3814 HSMP381B HSMP381C HSMP381F HSMP3820 HSMP3822 HSMP3830 HSMP3832 HSMP3833 HSMP3834 HSMP3860 HSMP3862 HSMP3864 HSMP386B HSMP386E HSMP386L HSMP3880 HSMP3890 HSMP3892 HSMP3894 HSMP3895 HSMP389B HSMP389C HSMP389F HVB14S HVC131 HVC132 HVC200A HVC200A HVC202A HVC202B HVC300A HVC300B HVC306A HVC306B HVC355B HVC359 HVC363A HVC376B HVC376B HVD132 HVU131 HVU132 HVU202(A) HVU202(A) HVU300A HVU307 HVU315

RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD RFMD Microsemi Sanyo POLYFET POLYFET POLYFET Skyworks Skyworks Agilent Agilent Agilent Hittite Renesas Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Agilent Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas Renesas

CGD942C CGD942C CGD942C CGD942C CGD944C CGD944C CGD944C CGD944C CGD944C CGD944C CGD888C CGD888C BLAH0912-500 BB145B BLF542 BLF543 BLF522 BB148 BB178 BFG410W BFG425W BFG480W BGA7127 BA277 BAP70-03 BAP50-04 BAP50-05 BAP50-03 BAP50-05 BAP50-03 BAP50-05 BAP64-05W BAP1321-03 BAP1321-04 BAP64-03 BAP64-04 BAP64-06 BAP64-05 BAP50-03 BAP50-04 BAP50-05 BAP50-02 BAP50-04W BAP50-05W BAP51-03 BAP51-03 BAP64-04 BAP64-05 BAP51-02 BAP51-02 BAP64-04 BAP51-05W BAP50-04W BAP65-02 BAP51-02 BB178 BB187 BB179 BB179B BB182 BB182 BB187 BB187 BB145B BB202 BB178 BB198 BB202 BAP51-02 BAP65-03 BAP51-03 BB149 BB149A BB152 BB148 BB148

CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD Microwave Varicap Broadcast Broadcast Broadcast Varicap Varicap WB trs 5-7 WB trs 5-7 WB trs 5-7 MMIC BS diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap

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HVU316 HVU363A HVU363A HVU363B IB0810M100 IB0912L30 IB0912L70 IB0912M210 IB0912M500 IB0912M600 IB1011L15 IB1011L220 IB1011L40 IB1011L470 IB1011M140 IB1011M190 IB1011M250 IB1011S190 IB1011S250 IB1012S10 IB1012S20 IB2729M5 IB2729M90 IB2731M110 IB2731MH110 IB2931MH155 IB3134M100 IB3135MH100 IBP1214M700 IBP1214M700 IBP3135M150 IDM175CW300 IDM500CW150 IDM500CW200 IDM500CW300 IDM500CW80 ILD1011M15 ILD1011M150 ILD1011M15HV ILD1011M160HV ILD1011M250 ILD1011M30 ILD1011M400 ILD1011M450HV ILD1011M550HV ILD1214M10 ILD2731M140 ILD3135M120 ILP1214EL200 INA-51063 J270 J308 J309 J310 JDP2S01E JDP2S01U JDP2S02AFS JDP2S02AS JDP2S02T JDP2S04E JDS2S03S JTDA150A KP2310R KTK920BT KTK920T KV1835E LC421 MA2S077 MA2S357 MA2S357 MA2S372 MA2S374 MA2SV01 MA357 MA366 MA368

Renesas Renesas Renesas Renesas Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Integra Agilent Standard Standard Standard Standard Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Toshiba Microsemi Toko KEC KEC Toko POLYFET Standard Matsushita Matsushita Matsushita Matsushita Renesas Matsushita Matsushita Matsushita

BB131 BB148 BB153 BB148 BLF871 BLA6H0514-25 BLA6H0514-25 BLA6H0514-25 BLA6H0912-500 BLA6H0912-500 BLA6H0514-25 BLA6G1011-200R BLA6H0514-25 BLA6H0912-500 BLA6G1011-200R BLA6G1011-200R BLA6G1011-200R BLA6G1011-200R BLA6G1011-200R BLA6H0514-25 BLA6H0514-25 BLS6G2731-6G BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 BLS6G2731-120 BLS6G3135S-120 BLS6G3135S-120 BLL6H1214-500 BLL6H1214-500 BLS6G3135S-120 BLF278 BLF881 BLF888 BLF878 BLF871 BLL6H0514-25 BLA6G1011-200R BLA6H0514-25 BLA6G1011-200R BLA6G1011-200R BLA6H0514-25 BLA6H0912-500 BLA6H0912-500 BLA6H1011-600 BLL6H0514-25 BLS6G2731-120 BLS6G3135S-120 BLS7G2933P-200 BGA2001 J177 J108 J109 J110 BAP65-02 BAP65-03 BAP51-02 BAP51-03 BAP63-02 BAP50-02 BA891 BLF177 BAP64-04W BF1108 BF1108R BB199 BLF544 BA277 BB178 BB187 BB179 BB182 BB202 BB153 BB148 BB131

Varicap Varicap Varicap Varicap Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Broadcast Broadcast Broadcast Broadcast Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave MMIC FET FET FET FET PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode BS diode Broadcast PIN diode FET FET Varicap Broadcast BS diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap

MA372 MA372 MA4CP101A MA4P274-1141 MA4P275-1141 MA4P275CK-287 MA4P277-1141 MA4P278-287 MA4P789-1141 MA4P789ST-287 MAX2659 MAX2659 MAX2659 MC7712 MC7716 MC7722 MC7726 MC-7831 MC7831-HA MC-7831-HA MC-7832 MC7832-HA MC-7832-HA MC-7833 MC-7836 MC-7836 MC-7845 MC-7846 MC-7847 MC7852 MC7866 MC-7881 MC-7882 MC-7883 MC-7884 MC-7891 MC7893 MC7893 MC-7893 MC7894 MC7894 MC-7894 MC7896 MC7896 MC-7896 MCH4009 MD7P19130 MD7P19130H MD7P19130H (2) MDS400 MDS800 MHW10186N MHW10236N MHW10247AN MHW10276N MHW1224 MHW1244 MHW1253LA MHW1254L MHW1254LA MHW1304L MHW1304LA MHW1304LAN MHW1346 MHW1353LA MHW1354LA MHW5182A MHW5185B MHW5222A MHW5272A MHW5342A MHW5342T MHW6182 MHW6182-6 MHW6182T MHW6185B

Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Matsushita Maxim Maxim Maxim NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC Sanyo Freescale Freescale Freescale Microsemi Microsemi Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

BB149 BB149A BAP65-03 BAP51-03 BAP65-03 BAP65-05 BAP70-03 BAP70-03 BAP1321-03 BAP1321-04 BGU7003 BGU7005 BGU7007 BGY785A BGY787 BGY785A BGY787 BGY885A BGY1085A BGY1085A BGY887 CGY1041 CGY1041 BGY887B BGY887B CGY1047 BGD802 CGD942C CGD944C BGY885A BGD816L BGD802 BGD814 CGD942C CGD944C CGD1042H CGD1042Hi CGD982HCi CGD1042H CGD1044Hi CGD985HCi CDG1044H CGD1046Hi CGD987HCi CGD1044H BFG424F BLF6G20LS-110 BLF6G20LS-75 BLF6G20(LS)-180RN BLA6H0912-500 BLA6H1011-600 BGY1085A CGY1043 CGD1044H CGY1047 BGY67 BGY67A BGY67A BGY68 BGY68 BGY68 BGY68 BGY68 BGY67A BGY67A BGY68 BGY585A BGD502 BGY587 BGY587B BGY588N BGY588N BGY585A BGY685A BGY585A BGD502

Varicap Varicap PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode MMIC MMIC MMIC CATV PPA CATV PPA CATV PPA CATV PPA CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PD CATV PD CATV PD CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD WB trs 5-7 Base station Base station Base station Microwave Microwave CATV PP CATV PP CATV PD CATV PP CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV PPA CATV PD CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PD

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Cross-references & replacements

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MHW6185T MHW6205 MHW6222 MHW6222B MHW6222T MHW6272 MHW6272T MHW6342 MHW6342T MHW7182B MHW7182C MHW7185C2 MHW7185CL MHW7205C MHW7205CL MHW7205CLN MHW7222 MHW7222A MHW7222B MHW7242A MHW7272A MHW7292 MHW7292A MHW7292AN MHW7342 MHW8142 MHW8182B MHW8182C MHW8182CN MHW8185 MHW8185L MHW8188AN MHW8205 MHW820L MHW8222BN MHW8227A MHW8227AN MHW8247A MHW8247AN MHW8292 MHW8342 MHW8342N MHW9146 MHW9182B MHW9182C MHW9182CN MHW9186 MHW9186A MHW9187N MHW9188AN MHW9188N MHW9227AN MHW9242A MHW9247 MHW9247A MHW9247AN MHW9247N MHWJ5272A MHWJ7185A MHWJ7205A MHWJ7292 MHWJ9182 MMBF4391 MMBF4392 MMBF4393 MMBF4860 MMBF5484 MMBFJ113 MMBFJ174 MMBFJ175 MMBFJ176 MMBFJ177 MMBFJ308 MMBFJ309 MMBFJ310 MMBFU310

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

BGD502 BGD704 BGY587 BGY687 BGY587 BGY587B BGY587B BGY588N BGY588N BGY785A BGY785A BGD712 BGD712 BGD714 BGD714 BGD714 BGY787 BGY787 BGY787 BGE787B BGE787B BGE787B BGE787B BGE787B BGE788 BGY883 BGY885A BGY885A BGY885A BGD814 BGD812 CGD942C BGD814 BGD814 BGY887 CGD942C CGD942C CGD944C CGD944C BGY887B BGY888 CGY888C BGY883 BGY1085A BGY1085A BGY1085A BGY885A BGY885A CGD942C CGD942C CGD942C CGD942C CGD1042 CGD944C CGD944C CGD944C CGD944C BGY587B BGD712 BGD714 BGE787B BGY1085A PMBF4391 PMBF4392 PMBF4393 PMBFJ112 BFR31 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ310

CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PPA CATV PPA CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA/HG CATV PPA CATV PPA CATV PPA CATV PP CATV PD CATV PD CATV PD CATV PD CATV PD CATV PP CATV PD CATV PD CATV PPA CATV PD CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PPA CATV PP CATV PPA CATV PPA CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PD CATV PPA CATV PD CATV PD CATV PPA/HG CATV PPA FET FET FET FET FET FET FET FET FET FET FET FET FET FET

MMBR5031L MMBR5179L MMBR571L MMBR901L MMBR911L MMBR920L MMBR931L MMBR941BL MMBR941L MMBR951AL MMBR951L MMBV105GLT1 MMBV109LT1 MMG2001NT1 MMG2001T1 MMG3004NT1 MMG3014 MMG3014 MPAL2731M15 MPAL2731M30 MPAL3035M15 MPAL3035M30 MPF102 MPF970 MPF971 MRF10005 MRF1000MB MRF10031 MRF1004MB MRF10120 MRF10150 MRF10350 MRF10502 MRF1090MB MRF1150MA MRF1150MB MRF134 MRF136 MRF136Y MRF137 MRF140 MRF141 MRF141G MRF148A MRF150 MRF151 MRF151A MRF151G MRF154 MRF157 MRF158 MRF160 MRF166C MRF166W MRF171A MRF173 MRF173CQ MRF174 MRF175GU MRF175GV MRF175LU MRF176GU MRF176GV MRF177 MRF18030ALR3(1) MRF18030ALR3(1) MRF18030ALSR3(1) MRF18030ALSR3(1) MRF18030BLR3(1) MRF18030BLR3(1) MRF18030BLSR3(1) MRF18030BLSR3(1) MRF18060AL(2) MRF18060BL(2) MRF18085AL(2) MRF18085BL (2)

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale ONSemicond. ONSemicond. Freescale Freescale Freescale Freescale Freescale Integra Integra Integra Integra Standard Standard Standard M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

BFS17 BFS17A PBR951 BFR92A BFR93A BFR93A BFT25A PBR941 PBR941 PBR951 PBR951 BB156 BB148 BGD816L BGD816L BGA7127 BGA7124 BGA7024 BLS6G2731-6G BLS6G2731-6G BLS6G2731-6G BLS6G2731-6G BF245A J174 J176 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLA6H0912-500 BLA6H0912-500 BLA6H0912-500 BLF871 BLF871 BLF881 BLF881 BLF177 BLF177 BLF278 BLF175 BLF177 BLF177 BLF177 BLF278 BLF574 BLF574 BLF871 BLF871 BLF871 BLF881 BLF881 BLF871 BLF871 BLF881 BLF881 BLF278 BLF871 BLF881 BLF573S BLF871 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLF6G21-30 BLF6G20-45 BLC6G20-75 BLC6G20-75 BLC6G20-75 BLF7G20L(S)-300P

WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Varicap Varicap CATV PD CATV PD MMIC MMIC MMIC Microwave Microwave Microwave Microwave FET FET FET Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station

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MRF18085BL(2) MRF18090AR3(1) MRF18090B (2) MRF18090B(2) MRF19030L(2) MRF19030L(2) MRF19045L(2) MRF19060L(2) MRF19085LR3(1) MRF19085LSR3(1) MRF19090R3 (1) MRF19090R3(1) MRF19090SR3 (1) MRF19090SR3(1) MRF19125 (2) MRF19125(2) MRF21010LR1(1) MRF21010LSR1(1) MRF21030LR3(1) MRF21030LSR3(1) MRF21045LR3(1) MRF21045LSR3(1) MRF21060L(2) MRF21085L(2) MRF21090(2) MRF21120R6(1) MRF21125(2) MRF21125SR3(1) MRF21180R6(1) MRF275G MRF275L MRF281SR1(1) MRF281ZR1(1) MRF282SR1(1) MRF282ZR1(1) MRF284LR1(1) MRF284LSR1(1) MRF313 MRF314 MRF316 MRF317 MRF321 MRF323 MRF327 MRF372 (3) MRF373ALR1 (1) MRF373ALR1 (2) MRF373ALSR1 (1) MRF374A (1) MRF377H (1) MRF377H (2) MRF377H(2) MRF392 MRF393 MRF421 MRF422 MRF426 MRF428 MRF429 MRF448 MRF454 MRF455 MRF577 MRF5811L MRF5P20180HR6(1) MRF5P21045NR1 (1) MRF5P21180HR6 (1) MRF5P21180HR6(1) MRF5S19060N(2) MRF5S19090HR3(1) MRF5S19090HSR3(1) MRF5S19100H (2) MRF5S19100H(2) MRF5S19130H (2) MRF5S19130H(2) MRF5S19150H (2)

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

BLC6G20-75 BLF6G20-110 BLF7G20L(S)-300P BLF6G20-110 BLF6G21-30 BLF6G20-45 BLF6G20-45 BLF6G20-45 BLF6G20-110 BLF6G20-110 BLF7G20L(S)-300P BLF6G20-110 BLF7G20L(S)-300P BLF6G20-110 BLF6G20(LS)-110 BLF6G20-140 BLF3G21-6 BLF3G21-6 BLF6G22-30 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF6G22-75 BLF6G22-100 BLF6G22-100 BLF6G22-130 BLF6G22-130 BLF6G22-130 BLF6G22-180 BLF881 BLF871 BLF6G21-6 BLF6G21-6 BLF1822-10 BLF1822-10 BLF3G21-30 BLF3G21-30 BLF871 BLF881 BLF871 BLF871 BLF871 BLF871 BLF871 BLF881 BLF871 BLF878 BLF871 BLF881 BLF888 BLF878 BLF872 BLF881 BLF871 BLF871 BLF177 BLF871 BLF177 BLF177 BLF573S BLF871 BLF871 PRF957 BFG93A/X BLF6G20-180P BLD6G22L(S)-50 BLF6G22(LS)-180RN BLF6G20-180P BLF6G20-75 BLF6G20-110 BLF6G20-110 BLF7G20L(S)-140P BLF6G20-110 BLF6G20(LS)-110 BLF6G20-140 BLF6G20LS-140

Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Broadcast Broadcast Base station Base station Base station Base station Base station Base station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Base station Broadcast Base station Broadcast Base station Broadcast Base station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast WB trs 1-4 WB trs 1-4 Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station

MRF5S19150H(2) MRF5S21045N (2) MRF5S21045N(2) MRF5S21090HR3(1) MRF5S21090HSR3(1) MRF5S21100HR3(1) MRF5S21100HSR3(1) MRF5S21130HR3(1) MRF5S21130HSR3(1) MRF5S21150H(2) MRF5S9150H (2) MRF6P18190HR6(1) MRF6P21190HR6 (1) MRF6P21190HR6(1) MRF6P3300H (2) MRF6P3300H(2) MRF6S18060N(2) MRF6S18100N(2) MRF6S18140H(2) MRF6S19060N(2) MRF6S19100H (2) MRF6S19100H(2) MRF6S19100N(2) MRF6S19120H (2) MRF6S19120H(2) MRF6S19140H (2) MRF6S19140H(2)

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station

MRF6S19200H (2)

Freescale

MRF6S20010 MRF6S20010 MRF6S20010N (2) MRF6S20010N(2) MRF6S20010N(2) MRF6S21050L(2) MRF6S21060N (2) MRF6S21060N(2) MRF6S21100H (2) MRF6S21100H(2) MRF6S21100N (2) MRF6S21100N(2) MRF6S21140H (2) MRF6S21140H(2) MRF6S21190H MRF6S21190H MRF6S21190H (2) MRF6S23100H (2) MRF6S23100H (2) MRF6S27015N MRF6S27015N (2) MRF6S27015N (2) MRF6S27050HR3 MRF6S27050HSR3 MRF6S27085H MRF6S27085H (2) MRF6S27085HR3 MRF6S27085HS MRF6S27085HSR3 MRF6V10010N (1) MRF6V10250HS (1) MRF6V12250H (2) MRF6V12500H (2) MRF6V14300H (2) MRF6V2010N (2) MRF6V2010N(2) MRF6V2010NBR1(18a) MRF6V2010NR1(18a) MRF6V2150N (2) MRF6V2150N(2) MRF6V2150NBR1(18a) MRF6V2150NR1(18a) MRF6V2300N (2) MRF6V2300N(2) MRF6V2300N(2) MRF6V3090N (4) MRF6V4300N (2)

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

BLF6G22-150P BLD6G22L(S)-50 BLF1822-10 BLF6G22-100 BLF6G22-100 BLF6G22-100 BLF6G22-100 BLF6G22-130 BLF6G22-130 BLF6G22-150P BLF6G10(LS)-160RN BLF6G20-180P BLF7G22LS-130 BLF6G20-180P BLF888 BLF878 BLF6G20-75 BLF6G20-110 BLF6G20-140 BLF6G20-75 BLF7G20L(S)-140P BLF6G20-110 BLF6G20-110 BLF7G20L(S)-140P BLF6G20-110 BLF6G20LS-75 BLF6G20-140 BLF6G20-180PN, BLF7G20L(S)-200 BLM6G22-30 BLM6G22-30G BLM6G22-30 BLF6G21-6 BLF1822-10 BLF6G22-45 BLF6G22LS-75 BLF6G22-75 BLF6G22LS-100 BLF6G22-100 BLF6G22LS-100 BLF6G22-100 BLF6G22L(S)-130 BLF6G22-130 BLF6G22-180P BLF6G22-180PN BLF7G22L(S)-200 BLF7G27L(S)-75P BLF7G27L(S)-75P BLF6G27-10 BLF6G27-10(G) BLF6G27-10(G) BLF6G27-45 BLF6G27S-45 BLF6G27LS-135 BLF7G27L(S)-140 BLF6G27-135 BLF6G27LS-75 BLF6G27LS-135 BLL6H0514-25 BLA0912-250R BLA6H0912-500 BLA6H0912-500 BLL6H1214-500 BLF571 BLF244 BLF872 BLF871 BLF871 BLF177 BLF882 BLF881 BLF573S BLF369 BLF378 BLF871 BLF573S

Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Microwave Microwave Microwave Microwave Microwave Base station Broadcast Broadcast Broadcast Base station Broadcast Broadcast Broadcast Base station Broadcast Broadcast Broadcast Base station

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Cross-references & replacements

Base station

Manufacturer type

Manufacturer

NXP type

Product family

Manufacturer type

Manufacturer

NXP type

Product family

MRF6VP11KH (1) MRF6VP21KH (1) MRF6VP2600H (1) MRF6VP2600HR6(18o) MRF6VP3450 MRF6VP3450H (4) MRF6VP41KH (2)

Freescale Freescale Freescale Freescale Freescale Freescale Freescale

Base station Base station Base station Broadcast Broadcast Base station Base station

MRF7S15100H (2)

Freescale

MRF7S18125AHS MRF7S18170H (2) MRF7S18170H(2) MRF7S19080H (2) MRF7S19080H(2) MRF7S19080HS MRF7S19100 MRF7S19100N (2) MRF7S19100N(2) MRF7S19120N(1) MRF7S19120NR1 (1)

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale

MRF7S19170H (2)

Freescale

MRF7S19170H(2) MRF7S19210H MRF7S21080H (2) MRF7S21110H (2) MRF7S21110HS MRF7S21150H (2) MRF7S21170 MRF7S21170H (2) MRF7S21210H (2) MRF7S27130H (2) MRF7S35015HSR3 (1) MRF7S35120HSR3 (1) MRF7S38010H MRF7S38010H (2) MRF7S38040H MRF7S38040H (2) MRF7S38040HR3 MRF7S38040HSR3 MRF8S18120H (2) MRF9030L (2) MRF9030N (2) MRF9135L (2) MRF917 MRF9200L (2) MRF9210R3 (1) MRF927 MRF9411L MRF947 MRF947A MRF9511L MRF957 MRFE6P3300H MRFE6P3300H (2) MRFE6S9125N MRFE6S9125N (2) MRFE6S9130H (2) MRFE6S9135H (2) MRFE6S9135HS MRFE6S9160H (2) MRFE6S9201H (2) MRFE6S9205HS MS1003 MS1004 MS1007 MS1008 MS1011 MS1051 MS1076 MS1078 MS1079 MS1204 MS1277 MS1278 MS1279

Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi

BLF578 BLF578 BLF871 BLF881 BLF878 BLF878 BLF578 BLF6G15L(S)-40BRN/ BLF6G15L(S)-250PBRN BLF6G20LS-140 BLF7G20L(S)-200 BLF6G22-180 BLF6G20(LS)-110 BLF6G20-110 BLF6G20LS-75 BLF6G20LS-110 BLF6G20LS-75 BLF6G20-110 BLF6G20-110 BLF6G20LS-140 BLF6G20-180PN, BLF7G20L(S)-200 BLF6G20-180 BLF6G20-230PRN BLF6G22LS-100 BLF6G22L(S)-130 BLF6G22LS-100 BLF7G22LS-130 BLF6G22LS-100 BLF6G22-180PN BLF7G22L(S)-250P BLF7G27L(S)-140 BLS6G3135-20 BLS6G3135-120 BLF6G38-10G BLF6G38(S)-25 BLF6G38LS-50 BLF6G38(LS)-50 BLF6G28-50 BLF6G28LS-51 BLF7G20L(S)-250P BLF6G10(LS)-160RN BLF6G10(LS)-160RN BLF6G10(LS)-135RN BFQ67W BLF6G10L(S)-260PRN BLF6G10L(S)-260PRN BFS25A BFG520/X BFS520 PRF947 BFG540/X PRF957 BLF878 BLF573 BLF6G10LS-135R BLF6G10(LS)-135RN BLF6G10(LS)-135RN BLF6G10(LS)-200RN BLF6G10LS-135R BLF6G10(LS)-160RN BLF6G10(LS)-200RN BLF6G10LS-200RN BLF645 BLF888 BLF871 BLF871 BLF888 BLF871 BLF888 BLF871 BLF888 BLF645 BLF888 BLF888 BLF888

MS1280 MS1329 MS1453 MS1503 MS1506 MS1507 MS1509 MS1511 MS1533 MS2001 MS2003 MS2003 MS2005 MS2010 MS2176 MS2200 MS2207 MS2210 MS2215 MS2267 MS2321 MS24221 MS2441 MS2472 MS2473 MS2553 MS2575 MS3024 MSC1015MP MSC1175M MSC1400M MSC1450M MT4S200T MT4S200U MT4S34U MV2109G MW6IC2240N (2) MW6S004NT1 (1) MW6S010N (2) MW7IC2725GNR1 MW7IC2725N MW7IC2725N MW7IC2725NB MW7IC2725NR1 MW7IC2750GNR1 MW7IC2750N (3) MW7IC2750NR1 MW7IC3825GN MW7IC3825N MW7IC3825N (3) MW7IC3825NB MW7IC915N (1) NESG3032M14 OS8740230W PD55012-E PD55025-E PD55035-E PD57018-E PD57030-E PD57045-E PD57060-E PD57070-E PD85015-E PD85025C PD85025-E PD85035C PD85035-E PRF134 PRF134 PRF136 PRF136 PRF947B PRF947B PTF 041501E - 150 W PTF 041501F - 150 W PTF 080101M - 10 W

Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Toshiba Toshiba Toshiba ONSemicond. Freescale Freescale Freescale Freescale Freescale Infineon Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale Freescale NEC RFMD ST ST ST ST ST ST ST ST ST ST ST ST ST POLYFET Infineon POLYFET Infineon Motorola Infineon Infineon Infineon Infineon

BLF888 BLF878 BLF881 BLF871 BLF881 BLF881 BLF871 BLF878 BLF645 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF6G22-45 BLF878 BLA6H0912-500 BLA6H0912-500 BLA6G1011-200R BLF177 BLA6G1011-200R BLL6H0514-25 BLA6G1011-200R BLAH0912-500 BLAH0912-500 BLA6H1011-600 BLL6H0514-25 BLL6H0514-25 BLF6G22-45 BLL6H0514-25 BLA6G1011-200R BLAH0912-500 BLA6H0912-500 BFG424W BFG425W BFG410W BB182LX BLF6G22LS-75 BLF6G21-10G BLL6H0514-25 BLF6G27-10G BLF6G27-10G BLF6G27-10G BLF6G27-10 BLF6G27-10 BLF6G27LS-75 BLF6G27(LS)-75 BLF6G27-75 BLF6G38S-25 BLF6G38-25 BLF6G38(S)-25 BLF6G38-25 BLF6G10L(S)-260PRN BFU725F BGO807C BLF571 BLF571 BLF571 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLL6H0514-25 BLF571 BLF571 BLF571 BLF571 BLF571 BLF242 BLF242 BLF244 BLF244 PRF947 PRF947 BLF881S BLF881S BLF571

Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Microwave Microwave Microwave Broadcast Microwave Microwave Microwave Microwave Microwave Microwave Microwave Microwave Broadcast Microwave Microwave Microwave Microwave WB trs 5-7 WB trs 5-7 WB trs 5-7 Varicap Base station Base station Microwave Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station WB trs 5-7 CATV OR Broadcast Broadcast Broadcast Microwave Microwave Microwave Microwave Microwave Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast WB trs 1-4 WB trs 1-4 Broadcast Broadcast Broadcast

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NXP Semiconductors RF Manual 15th edition

Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Microwave Microwave Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station WB trs 1-4 Base station Base station WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 WB trs 1-4 Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast

Manufacturer

NXP type

Product family

Manufacturer type

Manufacturer

NXP type

Product family

PTF 080101S - 10 W PTF 081301E - 130 W PTF 180101S - 10 W PTF 191601E - 160 W PTF 210101M - 10 W PTF 210451E - 45 W PTF 210451F - 45 W PTF 240101S - 10 W PTF041501E-150 W PTF041501E-150 W PTF041501F-150 W PTF041501F-150 W PTF080101M-10 W PTF080101M-10 W PTF080101S-10 W PTF080101S-10 W PTF081301E-130 W PTF081301E-130 W PTF081301F-130 W PTF081301F-130 W PTF082001E-200 W PTF082001E-200 W PTF180101 PTF180101 PTFA 041501E – 175 W PTFA 041501F – 175 W PTFA 041501GL - 175 W PTFA 041501HL - 175 W PTFA 043002E - 300 W PTFA 070601E - 60 W PTFA 070601F - 60 W PTFA 072401EL - 240 W PTFA 072401FL - 240 W PTFA 080551E - 55 W PTFA 080551F - 55 W PTFA 081501E - 150 W PTFA 081501F - 150 W PTFA 082201E - 220 W PTFA 082201F - 220 W PTFA 091201E - 120 W PTFA 091201F - 120 W PTFA 091201GL - 120 W PTFA 091201HL - 120 W PTFA 092201E - 220 W PTFA 092201F - 220 W PTFA 092211EL - 250 W PTFA 092211FL - 250 W PTFA 092213 EL - 250 W PTFA 092213 FL - 250 W PTFA 142401EL - 240 W PTFA 142401FL - 240 W PTFA 180701E - 70 W PTFA 180701F - 70 W PTFA 181001E - 100 W PTFA 181001F - 100 W PTFA 181001GL - 100 W PTFA 191001E - 100 W PTFA 191001F - 100 W PTFA 192001E - 200 W PTFA 192001F - 200 W PTFA 192401E - 240 W PTFA 192401F - 240 W PTFA 210301E - 30 W PTFA 210701E - 70 W PTFA 210701F - 70 W PTFA 211001E - 100 W PTFA 211801E - 180 W PTFA 211801F - 180 W PTFA 212001E - 200 W PTFA 212001F - 200 W PTFA 212002E - 200 W PTFA 212401E - 240 W PTFA 212401F - 240 W PTFA 240451E - 45 W PTFA 260451E - 45 W PTFA 260851E - 85 W

Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Freescale Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon

BLF571 BLF881 BLF6G20-40 BLF7G20L(S)-300P BLD6G22L(S)-50 BLF7G22L(S)-200 BLF7G22L(S)-200 BLF7G27L(S)-100 BLF647 BLF647 BLF647 BLF647 BLF1043 BLF1043 BLF1043 BLF1043 BLF4G10-120 BLF4G10-120 BLF4G10-120 BLF4G10-120 BLF6G10-200 BLF6G10-200 BLF6G21-10G BLF6G21-10G BLF888 BLF888 BLF888 BLF888 blf573 BLF878 BLF878 BLF573 BLF573 BLF878 BLF878 BLF881 BLF881 BLF573 BLF573 BLF881 BLF881 BLF881 BLF881 BLF573 BLF573 BLF573 BLF573 BLF573 BLF573 BLF6G15L(S)-250PBRN BLF6G15L(S)-250PBRN BLF6G20(LS)-110 BLF6G20(LS)-110 BLF6G20(LS)-180RN BLF6G20(LS)-180RN BLF6G20(LS)-180RN BLF6G20(LS)-110 BLF6G20(LS)-110 BLF6G20-180PN BLF6G20-180PN BLF6G20-180PN BLF6G20-180PN BLD6G22L(S)-50 BLF6G22LS-75 BLF6G22LS-75 BLF6G22LS-100 BLF7G22L(S)-250P BLF7G22L(S)-250P BLF6G22-180PN BLF6G22-180PN BLF7G22LS-130 BLF6G22-180PN BLF6G22-180PN BLF7G27L(S)-100 BLF6G27(LS)-75 BLF6G27L(S)-45BN

Broadcast Broadcast Base station Base station Base station Base station Base station Base station Broadcast Broadcast Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station Base station

PTFA 260851F - 85 W PTFA 261301E - 130 W PTFA 261301F - 130 W PTFA 261702E - 170 W PTFA043002E-300 W PTFA043002E-300 W PTFA080551E-55 W PTFA080551F-55 W PTFA081501E-150 W PTFA081501F-150 W PTFA091201E-120 W PTFA091201F-120 W PTMA 080152M - 20 W PTMA 080302M - 40 W PTMA 210452EL - 45 W PTMA 210452FL - 45 W PZFJ108 PZFJ109 PZFJ110 R0605250L R0605250L R0605300L R0605300L R1005250L R2005200P12 R2005240 R2005240 R2005240P12 R2005350L RN142G RN142S RN242CS RN731V RN739D RN739F S10040200P S10040220GT S10040220P S10040230GT S10040240P S10040280GT S10040340 S505T S505TR S505TRW S5540220 S595T S595TR S595TRW S7540185 S7540215 S8740180GT S8740190 S8740190 S8740200P S8740220 S8740220GT S8740220P S8740230 S8740240GT S8740240P S8740240P12 S8740260GT S8740280GT S8740340 S8740340PT S949T S949TR S949TRW S974T S974T-GS08 S974TR S974TR-GS08 S974TRW S974TRW-GS08 SA701

Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Infineon Standard Standard Standard Standard RFMD Standard RFMD RFMD RFMD Standard RFMD RFMD RFMD Rohm Rohm Rohm Rohm Rohm Rohm RFMD RFMD RFMD RFMD RFMD RFMD RFMD Vishay Vishay Vishay Standard Vishay Vishay Vishay Standard Standard RFMD Standard RFMD RFMD Standard RFMD RFMD Standard RFMD RFMD RFMD RFMD RFMD RFMD RFMD Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay Vishay POLYFET

BLF6G27(LS)-135 BLF7G27L(S)-200P BLF7G27L(S)-100 BLF7G27L(S)-140 BLF878 BLF878 BLF6G10-45 BLF6G10-45 BLF6G10-160 BLF6G10-160 BLF4G10-120 BLF4G10-120 BLF871 BLF881 BLF6G22(S)-45 BLF6G22(S)-45 J108 J109 J110 BGY66B BGS67A BGY68 BGY68 BGY66B BGY67 BGY67A BGY67A BGY67A BGR269 BAP1321-03 BAP1321-02 BAP51LX BAP50-03 BAP50-04 BAP50-04W CGY1041 CGY1041 CGY1041 CGY1043 CGY1043 CGY1047 CGY1034 BF1101 BF1101R BF1101WR BGY587 BF1105 BF1105R BF1105WR BGY785A BGY787 BGY885A BGD812 BGY885A BGY887 BGD814 BGY887 BGY887 BGD816L BGY887 BGY887 BGY887 CGY887A CGY887B CGY888C CGY888C BF1109 BF1109R BF1109WR BF1109 BF1109 BF1109R BF1109R BF1109WR BF1109WR BLF145

Base station Base station Base station Base station Broadcast Broadcast Base station Base station Base station Base station Base station Base station Broadcast Broadcast Base station Base station FET FET FET CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA CATV RA PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP FET FET FET CATV PPA FET FET FET CATV PPA CATV PPA CATV PP CATV PD CATV PP CATV PP CATV PD CATV PP CATV PP CATV PD CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP CATV PP FET FET FET FET FET FET FET FET FET Broadcast

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Cross-references & replacements

Manufacturer type

Manufacturer type

Manufacturer

NXP type

Product family

Manufacturer type

Manufacturer

NXP type

Product family

SA701 SA741 SD1018 SD1018-06 SD1019-05 SD1422 SD1485 SD56120 SD56120M SD57030 SD57030-01 SD57120 SD702 SDV701Q SDV704Q SDV705Q SE701 SGA8343Z SK701 SK701 SK702 SM341 SM704 SM704 SMP1302-004 SMP1302-005 SMP1302-011 SMP1302-074 SMP1302-075 SMP1302-079 SMP1304-001 SMP1304-011 SMP1307-001 SMP1307-011 SMP1320-004 SMP1320-011 SMP1320-074 SMP1321-001 SMP1321-005 SMP1321-011 SMP1321-075 SMP1321-079 SMP1322-004 SMP1322-011 SMP1322-074 SMP1322-079 SMP1340-011 SMP1340-079 SMP1352-011 SMP1352-079 SMV1235-004 SMV1236-004 SR341 SR341 SR401 SR401 SR401 SR703 SR704U SST111 SST112 SST113 SST174 SST175 SST176 SST177 SST201 SST202 SST203 SST308 SST309 SST310 SST4391 SST4392 SST4393 SST4856

POLYFET POLYFET Microsemi Microsemi Microsemi Microsemi Microsemi ST ST ST ST ST POLYFET AUK AUK AUK POLYFET Sirenza POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks Skyworks POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET POLYFET Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard

BLF245 BLF175 BLF881 BLF881 BLF645 BLF871 BLF888 BLF871 BLF881 BLL6H0514-25 BLL6H0514-25 BLF578 BLF246B BB179 BB178 BB182 BLF245B BFG425W BLF544B BLF545 BLF546 BLF177 BLF147 BLF246 BAP50-05 BAP50-04 BAP50-03 BAP50-05W BAP50-04W BAP50-02 BAP70-03 BAP70-03 BAP70-03 BAP70-03 BAP65-05 BAP65-03 BAP65-05W BAP1321-03 BAP1321-04 BAP1321-03 BAP1321-04 BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB181 BB156 BLF378 BLF278 BLF248 BLF348 BLF368 BLF547 BLF548 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BFT46 BFR31 BFR30 PMBFJ308 PMBFJ309 PMBFJ310 PMBF4391 PMBF4392 PMBF4393 BSR56

Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Microwave Microwave Broadcast Broadcast Varicap Varicap Varicap Broadcast WB trs 5-7 Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET

SST4857 SST4859 SST4860 SST4861 ST704 ST744 ST744 SVC201SPA SXA-389B SXA-389B TAN150 TAN250A TAN300 TBB1016 TCS450 TCS800 TMF3201J TMF3202Z TMPF4091 TMPF4092 TMPF4093 TMPF4391 TMPF4392 TMPF4393 TMPFB246A TMPFB246B TMPFB246C TMPFJ111 TMPFJ112 TMPFJ113 TMPFJ174 TMPFJ175 TMPFJ176 TMPFJ177 TPR400 TPR500 TPR500A TSDF54040 TSDF54040-GS08 TSDF54040X-GS08 TSDF54040XR-GS08 UF2805B UF28100H UF28100M UF28100V UF2810P UF28150J UF2815B UF2820P UF2820R UF2840G UF2840P UMIL100 UMIL100A UMIL60 UMIL80 uPC2709 uPC2711 uPC2712 uPC2745 uPC2746 uPC2748 uPC2771 uPC8112 UTV200 UTV8100B VAM80 VMIL100 VRF148A VRF150 VRF151 VRF151G

Standard Standard Standard Standard POLYFET POLYFET POLYFET Sanyo RFMD RFMD Microsemi Microsemi Microsemi Renesas Microsemi Microsemi AUK AUK Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Microsemi Microsemi Microsemi Vishay Vishay Vishay Vishay M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM M/A- COM Microsemi Microsemi Microsemi Microsemi NEC NEC NEC NEC NEC NEC NEC NEC Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi

BSR57 BSR56 BSR57 BSR58 BLF346 BLF276 BLF277 BB187 BGA7124 BGA7024 BLF177 BLA6G1011-200R BLA6G1011-200R BF1204 BLA6H0912-500 BLA6H1011-600 BF1204 BF1202WR PMBF4391 PMBF4392 PMBF4393 PMBF4391 PMBF4392 PMBF4393 BSR56 BSR57 BSR58 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 BLAH0912-500 BLA6H0912-501 BLA6H0912-502 BF1102 BF1102 BF1102 BF1102R BLF871 BLF871 BLF871 BLF871 BLF871 BLF881 BLF871 BLF871 BLF871 BLF881 BLF881 BLF871 BLF871 BLF878 BLF878 BGA2709 BGA2711 BGA2712 BGA2001 BGA2001 BGA2748 BGA2771 BGA2022 BLF571 BLF645 BLF878 BLF645 BLF881 BLF177 BLF177 BLF878

FET FET FET FET Broadcast Broadcast Broadcast Varicap MMIC MMIC Broadcast Microwave Microwave FET Microwave Microwave FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET FET Microwave Microwave Microwave FET FET FET FET Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast MMIC MMIC MMIC MMIC MMIC MMIC MMIC MMIC Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast Broadcast

108

NXP Semiconductors RF Manual 15th edition

5.2

Cross-references: NXP discontinued types versus NXP replacement types

In alphabetical order of manufacturer discontinued type Abbreviations: BS diode Band switch diode CATV Community antenna television system FET Field effect transistor Varicap Varicap diode WB trs Wideband transistor RFP trs RF Power transistor

Product family NXP

Replacement type NXP

NXP discontinued type

Product family NXP

Replacement type NXP

BS diode BS diode PIN diode PIN diode PIN diode PIN diode Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap Varicap FET WB trs WB trs FET FET FET WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs WB trs

BA277 BA591 BAP142LX BAP51LX BAP51LX BAP55LX BB152 BB145B BB145B BB135 BB187 BB178LX BB179BLX BB179LX BB181LX BB182 BB182LX BB187LX BB149 BB202LX BB207 BBY40 BF1203 BFS17 BFS17 BF861A BF861C BF992 BFM505 BFM520 BFM505 BFM520 BFS17A BFG198 BFG198 BFG25AW/X BFG410W BFG425W BFG505/X BFG505 BFG520W/X BFG590/X BFG590 BFG590 BFG67 BFG92A/X BFG92A/X BFG93A/X BFG35 BFR92A BFR92A BFR92AW BFR92A BFR93AW BFR93A BFU725F/N1 BFU725F/N1

BFU725F BGA2031 BGD102/02 BGD102/04 BGD104 BGD104/04 BGD502/01 BGD502/03 BGD502/05 BGD502/07 BGD502/6M BGD502/C7 BGD502/R BGD504 BGD504/01 BGD504/02 BGD504/09 BGD602 BGD602/02 BGD602/07 BGD602/09 BGD602/14 BGD602D BGD702D BGD702D/08 BGD704/01 BGD704/07S BGD704/S9 BGD704N BGD802/09 BGD802N BGD802N/07 BGD804N BGD804N/02 BGD902 BGD902/07 BGD902L BGD904 BGD904/02 BGD904/07 BGD904L BGD906 BGE788 BGE847BO BGE847BO/FC BGE847BO/FC0 BGE847BO/FC0 BGE847BO/FC1 BGE847BO/SC BGE847BO/SC0 BGE887BO BGE887BO/FC BGE887BO/FC1 BGE887BO/SC BGO807 BGO847/01 BGO847/01

WB trs WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV

BFU725F/N1 BGA2031/1 BGD502 BGD502 BGD704 BGD704 BGD502 BGD502 BGD502 BGD502 BGD702 BGD502 BGD502 BGD704 BGD704 BGD704 BGD704 BGD702 BGD702 BGD702 BGD702 BGD702 BGD712 BGD712 BGD712 BGD704 BGD704 BGD704 BGD714 BGD802 BGD812 BGD812 BGD814 BGD814 BGD812 BGD902 BGD812 BGD814 BGD904 BGD904 BGD814 CGD942C BGE788C BGO827 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO827 BGO827/SC0 BGO827/SC0 BGO827/SC0 BGO807C BGO847 BGO847

NXP Semiconductors RF Manual 15th edition

Cross-references & replacements

NXP discontinued type BA277-01 BA792 BAP142L BAP51-01 BAP51L BAP55L BB132 BB145 BB145B-01 BB151 BB157 BB178L BB179BL BB179L BB181L BB182B BB182L BB187L BB190 BB202L BB804 BBY42 BF1203 BF689K BF763 BF851A BF851C BF992/01 BFC505 BFC520 BFET505 BFET520 BFG17A BFG197 BFG197/X BFG25AW/XR BFG410W/CA BFG425W/CA BFG505/XR BFG505W/XR BFG520W/XR BFG590/XR BFG590W BFG590W/XR BFG67/XR BFG92A BFG92A/XR BFG93A/XR BFQ34/01 BFR92 BFR92AR BFR92AT BFR93 BFR93AT BFR93R BFU510 BFU540

109

110

NXP discontinued type

Product family NXP

Replacement type NXP

NXP discontinued type

Product family NXP

Replacement type NXP

BGO847/FC0 BGO847/FC01 BGO847/SC0 BGQ34/01 BGU2003 BGX885/02 BGY1085A/07 BGY584A BGY585A/01 BGY586 BGY586/05 BGY587/01 BGY587/02 BGY587/07 BGY587/09 BGY587B/01 BGY587B/02 BGY587B/09 BGY588 BGY588/04 BGY66B/04 BGY67/04 BGY67/09 BGY67/14 BGY67/19 BGY67A/04 BGY67A/14 BGY68/01 BGY685A/07 BGY685AD BGY685AL BGY687/07 BGY687/14 BGY687B BGY687B/02 BGY785A/07 BGY785A/09 BGY785AD BGY785AD/06 BGY785AD/8M BGY785AD/8M BGY787/02 BGY787/07 BGY787/09 BGY847BO BGY847BO/SC BGY84A BGY84A/04 BGY84A/05 BGY85 BGY85A BGY85A/04 BGY85A/05 BGY85H/01 BGY86 BGY86/05 BGY87 BGY87/J1 BGY87B BGY88 BGY88/04 BGY88/04 BGY88/07 BGY887/02 BGY887BO BGY887BO/FC BGY887BO/SC BLC6G22-100 BLF1822-10 BLF2043 BLF2045 BLF4G08LS-160A BLF4G08LS-160A BLS2731-110T BLS2731-110 BLS2731-20

CATV CATV CATV WB trs WB trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs RFP trs

BGO827/SC0 BGO827/SC0 BGO827/SC0 BFG35 BGA2003 BGX885N BGY1085A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587 BGY587 BGY587B BGY587B BGY587B BGY588N BGY588N BGY66B BGY67 BGY67 BGY67 BGY67 BGY67A BGY67A BGY68 BGY685A BGY785A BGY785A BGY687 BGY687 BGE787B BGE787B BGY785A BGY785A BGY785A BGY785A BGY885A BGY885A BGY787 BGY787 BGY787 BGO827 BGO827/SC0 BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY585A BGY587 BGY587 BGY587 BGY587 BGY587B BGY588N BGY588N BGY588N BGY588N BGY887 BGO827 BGO827/FC0 BGO827/SC0 BLF6G22-100 BLF6G21-10G BLF6G21-10G BLF6G20-45BLF6G22-45 BLF6G10LS-160RN BLF6G10LS-160RN BLS6G2731-120 BLS6G2731-120 BLS6G2731-6G

BLS2731-50 BLF3G22-30 CGD914 CGY887A CGY887B GD923 OM7650 OM7670 ON4520/09 ON4520/2 ON4594/M5 ON4749 ON4831-2 ON4869 ON4876 ON4890 ON4990 PMBT3640/AT PN4392 PN4393 TFF1004HN

RFP trs RFP trs CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV CATV WB trs FET FET Satellite IC

BLS6G2731-6G BLF6G22-45 CGD1042H CGY1043 CGY1047 CGD942C BGY588C BGE788C BGY687 BGY687 BGY585A BGY588N BGY885A BGY587 BGY1085A BGD712 BGD885 BFS17 PMBF4392 PMBF4393 TFF1014HN

NXP Semiconductors RF Manual 15th edition

6. Packing and packaging information Packing quantities per package with relevant ordering code Package

Package dimensions L x W x H (mm)

Packing quantity

Product 12NC ending

Packing method

SOD323/SC-76

1.7 x 1.25 x 0.9

3,000 10,000

115 135

8 mm tape and reel 8 mm tape and reel

SOD523/SC-79

1.2 x 0.8 x 0.6

3,000 10,000 8,000 20,000

115 135 315 335

8 mm tape and reel 8 mm tape and reel 2 mm pitch tape and reel 2 mm pitch tape and reel

SOD882D

1.0x0.6x0.4

15000

315

reel

SOT23

2.9 x 1.3 x 0.9

3,000 10,000

215 235

8 mm tape and reel 8 mm tape and reel

SOT54

4.6 x 3.9 x 5.1

5,000 5,000 10,000 10,000

112 412 116 126

bulk, delta pinning bulk, straight leads tape and reel, wide pitch tape ammopack, wide pitch

SOT89/SC-62

4.5 x 2.5 x 1.5

1,000 4,000

115 135

12 mm tape and reel 12 mm tape and reel

SOT115

44.5 x 13.65 x 20.4

100

112

4 tray/box

SOT121B

28.45 x 28.45 x 7.27

20

112

blister, tray

SOT143(N/R)

2.9 x 1.3 x 0.9

3,000 10,000

215 235

8 mm tape and reel 8 mm tape and reel

SOT223/SC-73

6.7 x 3.5 x 1.6

1,000 4,000

115 135

12 mm tape and reel 12 mm tape and reel

SOT307

10 x 10 x 1.75

1,500 96 480

518 551 557

13" tape and reel dry pack 1 tray dry pack 5 tray dry pack

SOT323/SC-70

2.0 x 1.25 x 0.9

3,000 10,000

115 135

8 mm tape and reel 8 mm tape and reel

SOT341

5.3 x 10.2

1,000 658

118 112

13'' tape and reel tube

SOT343(N/R)

2.0 x 1.25 x 0.9

3,000 10,000

115 135

8 mm tape and reel 8 mm tape and reel

SOT343F

2.1 x 1.25 x 0.7

3,000

115

8 mm tape and reel

SOT360

6.5 x 4.4 x 0.9

2,500

118

16 mm tape and reel

SOT363/SC-88

2.0 x 1.25 x 0.9

3,000 10,000

115 135

8 mm tape and reel 8 mm tape and reel

SOT363

2.1 x 2.0 x 0.9

3,000 10,000

115 135

reel

SOT401

5 x 5 x 1.4

2,000 360

118 151

13" tape and reel 1 tray

SOT403

5.0 x 4.4 x 0.9

2,500

118

12 mm tape and reel

SOT416/SC-75

1.6 x 0.8 x 0.75

3,000

115

8 mm tape and reel

SOT467B

9.78 x 18.29 x 4.67

60 20

112 112

blister, tray blister, tray

SOT467C

20.45 x 18.54 x 4.67

60 20

112 112

blister, tray blister, tray

SOT502A

19.8 x 9.4 x 4.1

60 300

112 135

blister, tray reel NXP Semiconductors RF Manual 15th edition

Packing and packaging information

6.1

111

112

Package

Package dimensions L x W x H (mm)

Packing quantity

Product 12NC ending

Packing method

SOT502B

19.8 x 9.4 x 4.1

60 100

112 118

blister, tray reel

SOT538A

5.1 x 4.1 x 2.6

160

112

blister, tray

SOT539A

31.25 x 9.4 x 4.65

60 300

112 135

blister, tray reel

SOT540A

21.85 x 10.2 x 5.4

60

112

blister, tray

SOT608A

10.1 x 10.1 x 4.2

60 60 300

112 112 135

blister, tray blister, tray reel

SOT608B

10.1 x 10.1 x 4.2

60 100 300

112 118 135

blister, tray reel reel

SOT616

4.0 x 4.0 x 0.85

6,000 1,500 100

118 115 551

12 mm tape and reel 8 mm tape and reel tray

SOT617

5 x 5 x 0.85

6,000

118

Tape and reel

SOT618

6 x 6 x 0.85

4,000 1,000 490 2,450

118 515 551 157

13" tape and reel 7" tape and reel dry pack 1 tray dry pack 5 tray

SOT638

14 x 14 x 1

1,000 90 450

518 551 557

13" tape and reel dry pack 1 tray dry pack 5 tray dry pack

SOT650-1

3.0 x 3.0 x 0.85

6000

118

reel

SOT666

1.6 x 1.2 x 0.7

4,000

115

8 mm tape and reel

SOT684

8 x 8 x 0.85

1,000 260 260 1,300

518 151 551 157

13" tape and reel dry pack 1 tray 1 tray dry pack 5 tray dry pack

SOT724

8.7 x 3.9 x 1.47

2,500

118

16 mm tape and reel

SOT753

2.9 x 1.5 x 1.0

3,000

125

8 mm tape and reel

SOT763-1

2.5x3.5x0.85

3,000 6,000

115 135

reel

SOT778

6.0 x 6.0 x 0.85

490 4,000

551 518

tray multiple trays

SOT822-1

15.9 x 11 x 3.6

180

127

tube

SOT834-1

15.9 x 11 x 3.15

180

127

tube

SOT886

1.45 x 1.0 x 0.5

5000

115

8 mm tape and reel

SOT891

1.0 x 1.0 x 0.5

5000

132

8 mm tape and reel

SOT908

3.0 x 3.0 x 0.85

6000

118

12 mm tape and reel

SOT922-1

17.4 x 9.4 x 3.88

60

112

blister, tray

SOT975B

6.5 x 6.5 x 3.3

180 100

112 118

blister, tray Tape and reel

SOT975C

6.5 x 6.5 x 3.3

180 100

112 118

blister, tray Tape and reel

SOT979A

31.25 x 10.2 x 5.3

60

112

blister, tray

SOT1110A

41.28 x 17.12 x 5.36

60 100

112 118

blister, tray reel

SOT1110B

41.15 x 36.32 x 4.68

60

112

blister, tray

NXP Semiconductors RF Manual 15th edition

Package dimensions L x W x H (mm)

Packing quantity

Product 12NC ending

Packing method

SOT1112A

16.65 x 20.32 x 4.205

60 100

112 118

blister, tray reel

SOT1112B

16.65 x 15.22 x 4.205

60 100

112 118

blister, tray reel

SOT1120A

9.4 x 19.815 x 4.1

60 100

112 118

blister, tray reel

SOT1120B

9.4 x 19.815 x 4.1

60 100

112 118

blister, tray reel

SOT1121A

34.16 x 19.94 x 4.75

60 100

112 118

blister, tray reel

SOT1121B

20.70 x 19.94 x 4.75

60 100

112 118

blister,tray reel

SOT1121C

13.4 x 20.575 x 3.785

DEV

DEV

DEV

SOT1130A

20.45 x 17.12 x 4.65

60

112

blister, tray

SOT1130B

9.91 x 17.12 x 4.65

60

112

blister, tray

SOT1135A

20.45 x 19.94 x 4.65

60 100

112 118

blister, tray reel

SOT1135B

16.65 x 9.78 x 4.205

60 100

112 118

blister, tray reel

SOT1135C

16.65 x 9.78 x 4.205

60 100

112 118

blister, tray reel

SOT1138

19.48 x 20.57 x 3.9

DEV

DEV

DEV

SOT1179

4.0 x 6.0 x 0.85

DEV

DEV

DEV

SOT1198-1

10.0 x 5.5 x 0.8

1000

115

reel

SOT1204

13.2 x 20.57 x 3.9

DEV

DEV

DEV

SOT1240B

21.60 x 20.575 x 3.875

DEV

DEV

DEV

SOT1240C

18.00 x 20.575 x 3.875

DEV

DEV

DEV

SOT1242B

22.60 x 32.45 x 4.455

DEV

DEV

DEV

SOT1242C

18.00 x 32.45 x 4.455

DEV

DEV

DEV

SOT1244B

19.43 x 20.575 x 3.875

DEV

DEV

DEV

SOT1244C

18.00 x 20.575 x 3.875

DEV

DEV

DEV

Packing and packaging information

Package

NXP Semiconductors RF Manual 15th edition

113

6.2

Marking codes list

Search online on marking code: http://www.nxp.com/package/ In alphabetical order of marking code In case a ‘%’ is given in the marking code, it means this type can be assembled at different assembly sites. p = made in Hong-Kong t = made in Malaysia W = made in China Marking code 10% 13% 20% 21% 22% 24% 25% 26% 28% 29% 30% 31% 32% 33% 34% 38% 39% 40% 41% 42% 47% 48% 49% 50% 1 2 7 8 9 %1W %3A %4A %5A %6G %6J %6K %6K %6L %6S %6W %6X %6Y %AB %E7 %E8 %E9 %EA %EB %EC %ED %M1 %M2 %M3 %M4 %M5 %M6 %M7 %M8 %M9

114

Type BAT18 BB207 BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BFR505 BFR520 BFR540 BFT25A PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ308 PMBFJ309 PMBFJ310 BA277 BB182 BA891 BB178 BB179 BAP51-05W BGA6289 BGA6489 BGA6589 PMBF4393 PMBF4391 BGA7024 PMBF4392 BGA7027 PMBFJ176 PMBFJ175 PMBFJ174 PMBFJ177 BF1210 BGA2800 BGA2801 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BF908 BF908R BF909 BF909R BF909A BF909AR BF904A BF904AR BSS83

Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOD523 SOD523 SOD523 SOD523 SOD523 SOT323 SOT89 SOT89 SOT89 SOT23 SOT23 SOT89 SOT23 SOT89 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT363 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143

NXP Semiconductors RF Manual 15th edition

Marking code %MA %MB %MC %MD %ME %MF %MG %MH %MK %ML %MM %MN %MP %MR %MS %MT %MU %MV %MW %MX %MY %MZ %VA %VB 1B% 1C% 1N% 2A% 2L 2N 2R 4A 4K% 4L% 4W% 5K% 5W% 6F% 6K% 6W% 7K% 8K% A1 A1 A1 A1 A2 A2 A2 A2 A2% A3 A3 A3 A3% A5 A5% A6% A7%

Type BF991 BF992 BF904 BF904R BFG505 BFG520 BFG540 BFG590 BFG505/X BFG520/X BFG540/X BFG590/X BFG520/XR BFG540/XR BFG10 BFG10/X BFG25A/X BFG67/X BFG92A/X BFG93A/X BF1100 BF1100R BGU7041 BGU7042 BGA2717 BAP50-05 BAP70-04W BF862 BF1208 BF1206F BF1207F BF1208D BAP64-04 BAP50-04 BAP64-04W BAP64-05 BAP64-05W BAP1321-04 BAP64-06 BAP50-04W BAP65-05 BAP70-05 BA591 BB208-02 BGA2001 BAP64Q BAP70Q BAT18 BB184 BB208-03 BGA2022 BAP64-03 BB198 BGA2003 BGA2031/1 BAP51-03 BGA2011 BGA2012 BFG310W/XR

Package SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT143 SOT363 SOT363 SOT363 SOT23 SOT323 SOT23 SOT666 SOT666 SOT666 SOT666 SOT23 SOT23 SOT323 SOT23 SOT323 SOT23 SOT23 SOT323 SOT23 SOT23 SOD323 SOD523 SOT343 SOT753 SOT753 SOT23 SOD523 SOD323 SOT363 SOD323 SOD523 SOT343 SOT363 SOD323 SOT363 SOT363 SOT343

Marking code A8 A8% A8% A9 AC B3 B6B6 B6% B7% BC% BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 C1% C2% C4% C5% D1 D2 D2 D3 D3 D4 D4% D5 D6 D7 D8 E1% E1% E1% E2% E2% E3% E6% FB FF FG G2 G2% G3% G4% G5% K1 K2 K4 K5 K6 K7

Type BAP50-03 BFG325W/XR PMBFJ620 BAP70-03 BGU7005 BGU7003 BGA2715 BGU7007 BFU725F BGA2716 BFQ591 BFG135 BFG198 BFG31 BFG35 BFG541 BFG591 BFG94 BFG97 BLT50 BLT70 BLT80 BLT81 BGM1011 BGM1012 BGM1013 BGM1014 BFU610F BFU630F BAP63-03 BFU660F BAP65-03 BFU690F BFR30/B BFU710F BFU730F BFU760F BFU790F BFS17 BFS17/FD BFS17W BFS17A BGA2712 BGA2709 BFG17A BFQ19 BFQ18A BFQ149 BA278 BGA2711 BGA2748 BGA2771 BGA2776 BAP51-02 BAP51-05W BAP50-02 BAP63-02 BAP65-02 BAP1321-02

Package SOD323 SOT343 SOT363 SOD323 SOT886 SOT891 SOT363 SOT886 SOT343F SOT363 SOT89 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT223 SOT363 SOT363 SOT363 SOT363 SOT343F SOT343F SOD323 SOT343F SOD323 SOT343F SOT23 SOT343F SOT343F SOT343F SOT343F SOT23 SOT23 SOT323 SOT23 SOT363 SOT363 SOT23 SOT89 SOT89 SOT89 SOD523 SOT363 SOT363 SOT363 SOT363 SOD523 SOD523 SOD523 SOD523 SOD523 SOD523

Type BAP70-02 BB199 BB202LX BAP51LX BB202 BF1203 BB178LX BF1204 BB179LX BF1205 BB179BLX BB181LX BF1206 BB182LX BB187LX BF1208 BF1201WR BF1201 BF1201R BF1202 BF1202WR BF1202R BF1211 BF1212 BF1211R BF1212R PMBFJ308 PMBFJ309 BFR30 PMBFJ310 BF1207 BFR31 BFT46 BF861A BF861B BF861C BF1215 BF1216 BF1205C BF545A BF545B BF545C BF1218 BF556A BF556B BF556C BGA2802 BF998WR BGA2803 BF904WR BGA2851 BF908WR BGA2869 BF909WR BF1100WR BF909AWR BF994S BF904AWR BF996S BF1211WR BF1212WR BF998 BF998R BB181 BFR505T BFM505 BFS505 BFG505W/X BFR520T BFM520 BFS520 BFG520W BFG520W/X BFQ540 BFS540 BFS25A BFG540W/X

Package SOD523 SOD523 SOD882D SOD882D SOD523 SOT363 SOD882D SOT363 SOD882D SOT363 SOD882D SOD882D SOT363 SOD882D SOD882D SOT363 SOT343 SOT143 SOT143 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT363 SOT23 SOT23 SOT23 SOT363 SOT23 SOT23 SOT23 SOT363 SOT343 SOT363 SOT343 SOT363 SOT343 SOT363 SOT343 SOT343 SOT343 SOT143 SOT343 SOT143 SOT343 SOT343 SOT143 SOT143 SOD523 SOT416 SOT363 SOT323 SOT343 SOT416 SOT363 SOT323 SOT343 SOT343 SOT89 SOT323 SOT323 SOT343

Marking code N8 N9 N9% NA NA% NB NB% NC NC% ND ND% NE NE% NF% NG% NH% P08 P09 P1 P1 P10 P11 P12 P13 P2% P2% P3 P4 P5 P5 P6 P7 P8 P9 PB PC PE PF PL R2% R2% R5 R7% R8% S S1% S2% S2% S3% S6% S7% S8% S9% SB% SC% SC% SD% SE% T5 UY V1 V1% V10 V2% V2% V3% V4% V6% V8 VA VA VB VC VC VC% VD% VD%

Type BFG540W/XR BFG540W BAP70AM BF1105WR BF1105R BF1109WR BF1109R BF1101WR BF1101R BFG424W BF1101 BFG424F BF1105 BF1109 BF1108 BF1108R PMBFJ108 PMBFJ109 BFG21W BB131 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 BFR92A BFR92AW BFG403W BFG410W BB135 BFG425W BFG480W BB147 BB148 BB149 BB152 BB153 BB155 BB156 BB149A BFR93A BFR93AW BFR93AR BFR106 BFG93A BAP64-02 BFG310/XR BBY40 BFG325/XR BF1107 BF510 BF511 BF512 BF513 BF1214 BGU7031 BB201 BGU7032 BGU7033 BFG10W/X BGU7004 BFG25AW/X BFT25 BFT25A BFQ67 BFQ67W BFG67 BAP64-06W BAP65-05W BAP1321-03 BF1217WR BF1217WR BF1118W BF1118WR BF1118WR BF1118 BF1118R BF1118R

Package SOT343 SOT343 SOT363 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT343 SOT143 SOT143 SOT143 SOT143 SOT23 SOT23 SOT343 SOD323 SOT23 SOT23 SOT23 SOT23 SOT23 SOT323 SOT343 SOT343 SOD323 SOT343 SOT343 SOD523 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOD323 SOT23 SOT323 SOT23 SOT23 SOT143 SOD523 SOT143 SOT23 SOT143 SOT23 SOT23 SOT23 SOT23 SOT23 SOT363 SOT363 SOT23 SOT363 SOT363 SOT343 SOT886 SOT343 SOT23 SOT23 SOT23 SOT323 SOT143 SOT323 SOT323 SOD323 SOT343 SOT343R SOT343 SOT343 SOT343R SOT143 SOT143 SOT143R

Marking code W1 W1% W1% W2% W4% W6% W7% W9% X X1% X1%

Type BF1102 BFT92 BFT92W BF1102R BAP50-05W BAP51-04W BAP51-06W BAP63-05W BB187 BFT93 BFT93W

Package SOT363 SOT23 SOT323 SOT363 SOT323 SOT323 SOT323 SOT323 SOD523 SOT23 SOT323

Packing and packaging information

Marking code K8 K9 L1 L2 L2 L2% L3 L3% L4 L4% L5 L6 L6% L7 L8 L9% LA LA% LB% LD% LE LE% LF% LG% LH% LK% M08 M09 M1% M10 M2% M2% M3% M33 M34 M35 M4% M5% M6% M65 M66 M67 M7% M84 M85 M86 MA% MB MB% MC MC% MD MD% ME MF MG MG% MH MH% MK ML MO% MO% N N0 N0% N0% N1 N2 N2% N2% N3 N4 N4 N4% N6% N7

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7. Abbreviations

3-way AM ASIC ASYM BPF BUC CATV CDMA CMMB CMOS CQS DAB DECT DiSEqC DSB DVB EDGE ESD FET FM GaAs GaN Gen GPS GSM HBT HDTV HF HFC HFET HPA HVQFN

Abbreviations

IF ISM LDMOS LNA LNB LO LPF MESFET MMIC MMPP

116

Doherty design using 3 discrete transistors Amplitude Modulation Application Specific Integrated Circuit Asymmetrical design of Doherty (main and peak device are different) Band Pass Filter Block Upconverter Community Antenna Television Code Division Multiple Access Chinese Multimedia Mobile Broadcasting Complementary Metal Oxide Semiconductor Customer Qualification Samples Digital Audio Broadcasting Digital Enhanced Cordless Telecommunications Digital Satellite Equipment Control Digital Signal Processor Digital Video Broadcasting Enhanced Data Rates for GSM Evolution Electro Static Device Field Effect Transistor Frequency Modulation Gallium Arsenide Gallium Nitride Generation Global Positioning System Global System for Mobile communications Heterojunction Bipolar Transistor High Definition Television High Frequency (3-30 MHz) Hybrid Fiber Coax Heterostructure Field Effect Transistor High Power Amplifier Plastic thermally enHanced Very thin Quad Flat pack No leads Intermediate Frequency Industrial, Scientific, Medical - reserved frequency bands Laterally Diffused Metal-Oxide-Semiconductor Low Noise Amplifier Low Noise Block Local Oscillator Low Pass Filter Metal Semiconductor Field Effect Transistor Monolithic Microwave Integrated Circuit Main and peak devices realized separately in halves of push-pull transistor

NXP Semiconductors RF Manual 15th edition

MPPM

Main and peak device realized in same pushpull transistor (2 times) MoCA Multimedia over Coax Alliance MOSFET Metal–Oxide–Semiconductor Field Effect Transistor MPA Medium Power Amplifier MRI Magnetic Resonance Imaging NF Noise Figure NIM Network Interface Module NMR Nuclear Magnetic Resonance PA Power Amplifier PAR Peak to Average Ratio PEP Peak Envelope Power pHEMT pseudomorphic High Electron Mobility Transistor PLL Phase Locked Loop QUBiC Quality BiCMOS RF Radio Frequency RFS Release for Supply RoHS Restriction of Hazardous Substances Rx Receive SARFT State Administration for Radio, Film and Television SER Serializer SiGe:C Sillicon Germanium Carbon SMATV Satellite Master Antenna Television SMD Surface Mounted Device SPDT Single Pole, Double Throw SYM Symmetrical design of Doherty (main and peak device are the same type of transistor) TD-SCDMA Time Division-Synchronous Code Division Multiple Access TCAS Traffic Collision Avoidance Systems TMA Tower Mounted Amplifier TTFF Time to First Fix Tx Transmit UHF Ultra High Frequency (470-860 MHz) UMTS Universal Mobile Telecommunications System VCO Voltage Controlled Oscillator VGA Variable Gain Amplifier VHF Very High Frequency (30-300 MHz) VoIP Voice over Internet Protocol VSAT Very Small Aperture Terminal WCDMA Wideband Code Division Multiple Access WiMAX Worldwide Interoperability for Microwave Access WLAN Wireless Local Area Network

8. Contacts and web links How to contact your authorized distributor or local NXP representative.

Authorized distributors Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific_dist Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe_dist North America: http://www.nxp.com/profile/sales/northamerica_dist

Local NXP Offices Asia Pacific: http://www.nxp.com/profile/sales/asia_pacific Europe / Africa / Middle East: http://www.nxp.com/profile/sales/europe North America: http://www.nxp.com/profile/sales/northamerica

NXP RF power & base stations: http://www.nxp.com/rfpower NXP RF FETs: http://www.nxp.com/rffets NXP RF CATV electrical & optical: http://www.nxp.com/catv NXP RF applications: http://www.nxp.com/rf NXP application notes: http://www.nxp.com/all_appnotes NXP cross-references: http://www.nxp.com/products/xref NXP packaging: http://www.nxp.com/package NXP end-of-life: http://www.nxp.com/products/eol

Web links

NXP RF Manual web page: http://www.nxp.com/rfmanual NXP varicaps: http://www.nxp.com/varicaps NXP RF PIN diodes: http://www.nxp.com/pindiodes NXP RF schottky diodes: http://www.nxp.com/rfschottkydiodes

NXP quality handbook: http://www.standardics.nxp.com/quality/handbook NXP literature: http://www.nxp.com/products/discretes/documentation NXP packaging: http://www.nxp.com/package NXP sales offices and distributors: http://www.nxp.com/profile/sales NXP high-speed converters http://www.nxp.com/dataconverters Contacts and web links

NXP Semiconductors: http://www.nxp.com

NXP RF MMICs: http://www.nxp.com/mmics NXP RF wideband transistors: http://www.nxp.com/rftransistors NXP Semiconductors RF Manual 15th edition

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9. Product index Portfolio chapter

Type

Abbreviations

1PS10SB82 1PS66SB17 1PS66SB82 1PS70SB82 1PS70SB84 1PS70SB85 1PS70SB86 1PS76SB17 1PS79SB17 1PS88SB82 ADC0801S040 ADC0804S series ADC0808S series ADC1002S020 ADC1003S series ADC1004S series ADC1005S060 ADC1006S series ADC1010S series ADC1015S series ADC1112D125 ADC1113D125 ADC1113S125 ADC1115S125 ADC1206S series ADC1207S080 ADC1210S series ADC1212D series ADC1213D series ADC1213S series ADC1215S series ADC1410S series ADC1412D series ADC1413D series ADC1413S series ADC1415S series ADC1610S series ADC1613D series ADC1613S series BA277 BA591 BA891 BAP1321-02 BAP1321-03 BAP1321-04 BAP1321LX BAP142LX BAP50-02 BAP50-03 BAP50-04 BAP50-04W BAP50-05 BAP50-05W BAP50LX BAP51-02 BAP51-03 BAP51-04W BAP51-05W BAP51-06W BAP51LX BAP55LX BAP63-02 BAP63-03 BAP63-05W BAP63LX BAP64-02 BAP64-03 BAP64-04 BAP64-04W BAP64-05 BAP64-05W 118

3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.2.4 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.8.1 3.2.3 3.2.3 3.2.3 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2

Type BAP64-06 BAP64-06W BAP64LX BAP64Q BAP65-02 BAP65-03 BAP65-05 BAP65-05W BAP65LX BAP70-02 BAP70-03 BAP70-04W BAP70-05 BAP70AM BAP70Q BAT17 BAT18 BB131 BB135 BB145B BB148 BB149 BB149A BB152 BB153 BB156 BB178 BB178LX BB179 BB179B BB179BLX BB179LX BB181 BB181LX BB182 BB182LX BB184 BB187 BB187LX BB189 BB198 BB199 BB201 BB202 BB202LX BB207 BB208-02 BB208-03 BBY40 BF1100 BF1100R BF1100WR BF1101 BF1101R BF1101WR BF1102(R) BF1105 BF1105R BF1105WR BF1107 BF1108 BF1108R BF1108W BF1108WR BF1109 BF1109R BF1109WR BF1118 BF1118R BF1118W BF1118WR

NXP Semiconductors RF Manual 15th edition

Portfolio chapter 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.2 3.2.4 3.2.3 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.2.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2

Type BF1201 BF1201R BF1201WR BF1202 BF1202R BF1202WR BF1203 BF1204 BF1205 BF1205C BF1206 BF1206F BF1207 BF1208 BF1208D BF1210 BF1211 BF1211R BF1211WR BF1212 BF1212R BF1212WR BF1214 BF1215 BF1216 BF1217 BF1218 BF245A BF245B BF245C BF510 BF511 BF512 BF513 BF545A BF545B BF545C BF556A BF556B BF556C BF861A BF861B BF861C BF862 BF904A BF904AR BF904AWR BF908 BF908R BF908WR BF909A BF909AR BF909AWR BF991 BF992 BF994S BF996S BF998 BF998R BF998WR BFG10 BFG10/X BFG10W/X BFG135 BFG198 BFG21W BFG25A/X BFG25AW BFG25AW/X BFG31 BFG310/XR

Portfolio chapter 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.5.2 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1

Type BFG310W/XR BFG325/XR BFG325W/XR BFG35 BFG403W BFG410W BFG424F BFG424W BFG425W BFG480W BFG505 BFG505/X BFG505W BFG505W/X BFG505W/XR BFG520 BFG520/X BFG520/XR BFG520W BFG520W/X BFG540 BFG540/X BFG540/XR BFG540W BFG540W/X BFG540W/XR BFG541 BFG590 BFG590/X BFG591 BFG67 BFG67/X BFG92A/X BFG93A BFG93A/X BFG94 BFG97 BFM505 BFM520 BFQ149 BFQ18A BFQ19 BFQ540 BFQ591 BFQ67 BFQ67W BFR106 BFR30 BFR31 BFR505 BFR505T BFR520 BFR520T BFR540 BFR92A BFR92AW BFR93A BFR93AR BFR93AW BFR94A BFR94AW BFS17 BFS17A BFS17W BFS25A BFS505 BFS520 BFS540 BFT25 BFT25A BFT46

Portfolio chapter 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.5.1 3.5.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.5.1

BFT92 BFT92W BFT93 BFT93W BFU610F BFU630F BFU660F BFU690F BFU710F BFU725F/N1 BFU730F BFU760F BFU790F BGA2001 BGA2002 BGA2003 BGA2011 BGA2012 BGA2022 BGA2031/1 BGA2709 BGA2711 BGA2712 BGA2714 BGA2715 BGA2716 BGA2717 BGA2748 BGA2771 BGA2776 BGA2800 BGA2801 BGA2802 BGA2803 BGA2815 BGA2816 BGA2850 BGA2865 BGA2866 BGA2870 BGA6289 BGA6489 BGA6589 BGA7024 BGA7027 BGA7124 BGA7127 BGA7130 BGA7202 BGA7204 BGA7350 BGA7351 BGD502 BGD702 BGD702N BGD704 BGD712 BGD712C BGD714 BGD802 BGD804 BGD812 BGD814 BGD816L BGD885 BGE787B BGE788C BGE885 BGM1011 BGM1012 BGM1013

Portfolio chapter 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.3.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.1 3.6.1 3.6.1 3.4.1 3.4.1 3.4.1

Type BGM1014 BGO807 BGO807C BGO807CE BGO827 BGR269 BGU7003 BGU7003W BGU7004 BGU7005 BGU7007 BGU7008 BGU7031 BGU7032 BGU7033 BGU7041 BGU7042 BGU7051 BGU7052 BGU7053 BGX7100 BGX7220 BGX7221 BGX7300 BGX885N BGY1085A BGY585A BGY587 BGY587B BGY588C BGY588N BGY66B BGY67 BGY67A BGY68 BGY685A BGY687 BGY785A BGY787 BGY835C BGY883 BGY885A BGY887 BGY887B BGY888 BLA6G1011-200R(G) BLA6G1011LS-200RG BLA6H0912-1000 BLA6H0912-500 BLA6H1011-600 BLD6G21L-50 BLD6G21LS-50 BLD6G22L(S)-50 BLF178P BLF2425M6L(S)180P BLF2425M6LS180P BLF2425M7L(S)140 BLF2425M7L(S)200 BLF2425M7L(S)250P BLF2425M7LS200 BLF2425M7LS250P BLF25M612 BLF278XR BLF571 BLF572P BLF573(S) BLF573P BLF574 BLF578 BLF578XR BLF642

Portfolio chapter 3.4.1 3.6.4 3.6.4 3.6.4 3.6.4 3.6.5 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.1 3.4.2 3.4.2 3.4.2 3.4.2 3.6.1 3.6.2 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.5 3.6.5 3.6.5 3.6.5 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.6.1 3.7.3.1 3.7.3.1 3.7.3.1 3.7.3.1 3.7.3.1 3.7.1.3 3.7.1.3 3.7.1.4 3.7.2.1 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1

Type BLF645 BLF647P BLF6G10-200RN BLF6G10(LS)-160RN BLF6G10(S)-45 BLF6G10L-40BRN BLF6G10L(S)-260PRN BLF6G10LS-200RN BLF6G13LS-250P BLF6G15L-250PBRN BLF6G15L-40BRN BLF6G15LS-500H BLF6G20-110 BLF6G20-180PN BLF6G20-180RN BLF6G20-230PRN BLF6G20-40 BLF6G20-45 BLF6G20-75 BLF6G20LS-110 BLF6G20LS-140 BLF6G20LS-180RN BLF6G20LS-75 BLF6G20S-230PRN BLF6G20S-45 BLF6G21-10G BLF6G22(LS)-180PN BLF6G22(LS)-180RN BLF6G22(S)-45 BLF6G22L-40BN BLF6G22L(S)-40P BLF6G22LS-100 BLF6G22LS-40P BLF6G22LS-75 BLF6G27LS-40P BLF6G38-10(G) BLF6G38(LS)-100 BLF6G38(LS)-25 BLF6G38(LS)-50 BLF7G10LS-250 BLF7G15LS-200 BLF7G15LS-300P BLF7G20L-200 BLF7G20L-250P BLF7G20L-90P BLF7G20LS-140P BLF7G20LS-200 BLF7G20LS-250P BLF7G20LS-90P BLF7G21L(S)-160P BLF7G21LS-160P BLF7G22L(S)-130 BLF7G22L(S)-160 BLF7G22L(S)-200 BLF7G22L(S)-250P BLF7G22LS-100P BLF7G22LS-160 BLF7G24L(S)-100 BLF7G24L(S)-140 BLF7G24LS-160P BLF7G27L(S)-100 BLF7G27L(S)-140 BLF7G27L(S)-150P BLF7G27L(S)-75P BLF7G27L(S)-90P BLF7G27LS-200P BLF7G38LS-90P BLF871(S) BLF878 BLF879P BLF881(S)

Portfolio chapter 3.7.2.1 3.7.2.1 3.7.1.1 3.7.1.1 3.7.1.1 3.7.1.1 3.7.1.1 3.7.1.1 3.7.2.1 3.7.1.2 3.7.1.2 3.7.2.1 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.1 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.5 3.7.1.6 3.7.1.6 3.7.1.6 3.7.1.6 3.7.1.1 3.7.1.2 3.7.1.2 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.3 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.4 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.5 3.7.1.6 3.7.2.1 3.7.2.2 3.7.2.2 3.7.2.1

Type

Portfolio chapter

BLF884P BLF888 BLF888A BLF888A(S) BLF8G10LS-160 BLF8G10LS-300P BLL6G1214L-250 BLL6H0514-25 BLL6H0514L(S)-130 BLL6H1214-500 BLL6H1214L(S)-250 BLM2425M720 BLM6G10-30(G) BLM6G22-30 BLM7G22S-60PG BLP05H6100P BLP05H6500P BLP05H650P BLP09H620 BLP10H605 BLP10H610 BLP10H6120 BLP10H6300P BLP10H6xx BLP15M6100P BLP15M630 BLP15M660P BLP15M705 BLP15M710 BLP15M7150P BLP15M7xx BLP2425M8140 BLP2425M8250P BLP25M710 BLP25M74 BLP7G10S-140P(G) BLP7G10S-140PG BLP7G22-10 BLS6G2731-6G BLS6G2731(S)-120 BLS6G2731P-200 BLS6G2731S-130 BLS6G2735L(S)-30 BLS6G2735LS-30 BLS6G2933P-200 BLS6G2933S-130 BLS6G3135(S)-120 BLS6G3135(S)-20 BLS7G2729L(S)-350P BLS7G2729LS-350P BLS7G2933S-150 BLS7G3135L(S)-350P BLS7G3135LS-350P BLT50 BLT70 BLT80 BLT81 BSR56 BSR57 BSR58 BSS83 CGD1040HI CGD1042H CGD1042HI CGD1044H CGD1044HI CGD1046Hi CGD942C CGD944C CGD982HCi CGD985HCi

NXP Semiconductors RF Manual 15th edition

3.7.2.2 3.7.2.2 3.7.2.2 3.7.2.1 3.7.1.1 3.7.1.1 3.7.3.2 3.7.3.1 3.7.3.2 3.7.3.2 3.7.3.2 3.7.2.3 3.7.1.1 3.7.1.4 3.7.1.4 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.1 3.7.2.3 3.7.2.3 3.7.2.3 3.7.2.3 3.7.1.1 3.7.1.1 3.7.1.4 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.7.3.3 3.3.1 3.3.1 3.3.1 3.3.1 3.5.1 3.5.1 3.5.1 3.5.2 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 3.6.3 119

Product index

Type

Portfolio chapter

Type CGD987HCi CGY1032 CGY1041 CGY1043 CGY1047 CGY1049 CGY888C DAC1001D125 DAC1003D160 DAC1005D series DAC1008D series DAC1201D125 DAC1203D160 DAC1205D series DAC1208D series DAC1401D125 DAC1403D160 DAC1405D series DAC1408D series J108 J109 J110 J111 J112 J113 J174 J175

120

3.6.3 3.6.2 3.6.2 3.6.2 3.6.2 3.6.2 3.6.1 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.8.2 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1

Type J176 J177 PBR941 PBR951 PMBD353 PMBD354 PMBF4391 PMBF4392 PMBF4393 PMBFJ108 PMBFJ109 PMBFJ110 PMBFJ111 PMBFJ112 PMBFJ113 PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177 PMBFJ308 PMBFJ309 PMBFJ310 PMBFJ620 PRF947 PRF949 PRF957 TFF1003HN

NXP Semiconductors RF Manual 15th edition

Portfolio chapter 3.5.1 3.5.1 3.3.1 3.3.1 3.2.4 3.2.4 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.5.1 3.3.1 3.3.1 3.3.1 3.4.4

Type TFF1007HN TFF1008HN TFF1014HN TFF1015HN TFF1017HN TFF1018HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11094HN TFF11096HN TFF11101HN TFF11105HN TFF11110HN TFF11115HN TFF11121HN TFF11126HN TFF11132HN TFF11139HN TFF11145HN TFF11152HN

Portfolio chapter 3.4.4 3.4.4 3.4.3 3.4.3 3.4.3 3.4.3 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4 3.4.4

Notes

NXP Semiconductors RF Manual 15th edition

121

Notes

122

NXP Semiconductors RF Manual 15th edition

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© 2011 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

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Date of release: May 2011 Document order number: 9397 750 17087 Printed in the Netherlands