ON Semiconductor Master Components Selector Guide Analog, Clock and Data Management, Standard Logic, Discrete, Power MOSFET and Integrated Function Products
SG388/D Rev. 7, September−2005
© SCILLC, 2005 Previous Edition © 2004 “All Rights Reserved”
ACE Loop, AnyLevel, BERS, Bullet−Proof, CHIPSCRETES, DUOWATT, E−FET, EASY SWITCHER, ECLinPS, ECLinPS Lite, ECLinPS MAX, ECLinPS Plus, EpiBase, Epicap, EZFET, FASTMOS, FLEXMOS, FULLPAK, GEMFET, GigaComm, HDPlus, ICePAK, L2TMOS, MCCS, MDTL, MECL, MEGAHERTZ, MHTL, MicroIntegration, MicroLeadless, MiniGate, MiniMOS, MiniMOSORB, MOSORB, MRTL, MTTL, Multi−Pak, NOCAP, ON−Demand, PInPAK, PMODE, PowerBase, POWERSENSE, POWERTAP, Quake, SCANSWITCH, SENSEFET, SLEEPMODE, SMALLBLOCK, SMARTDISCRETES, SMART HotPlug, SMARTswitch, SUPERBRIDGES, SuperLock, SURMETIC, SWITCHMODE, Thermopad, Thermowatt, TMOS, TMOS & Design Device, TMOS Stylized, Unibloc, UNIWATT, WAVEFET, Z−Switch and ZIP R TRIM are trademarks of Semiconductor Components Industries, LLC (SCILLC). HDTMOS, HVTMOS and SMART REGULATOR are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
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Table of Contents Page
Page
Analog ICs
Discretes
Family Tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Signal Conditioning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Interfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 Special Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 Application Specific Standard Products . . . . . . . . . . . . . 106
Family Tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170 Small Signal Transistors, FETs and Diodes . . . . . . . . . 172 TVS/Zeners . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199 Bipolar Power Transistors . . . . . . . . . . . . . . . . . . . . . . . . 242 Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 253 Thyristors, Triggers and Surge Suppressors . . . . . . . . . 268
Clock and Data Management
Power MOSFET Products
Signal Translators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121 Clock Distribution . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123 Clock Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125 Skew Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126 Prescalers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 Clock Synthesizers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127 Zero Delay Buffers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128 EMI Suppression Clocks . . . . . . . . . . . . . . . . . . . . . . . . . 130 VCO (PLL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 Phase/Frequency Detectors . . . . . . . . . . . . . . . . . . . . . . 130 Flip−Flops . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131 Latches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133 Shift Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134 Multiplexers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135 Serial/Parallel Converter and Parallel/Serial Converters . . . . . . . . . . . . . . . . . . . . . . . . 136 Gates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137 Counters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138 Comparators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139 Parity Checkers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139 Drivers/Receivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 Drivers/Buffers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Power MOSFET Products . . . . . . . . . . . . . . . . . . . . . . . . 279 SC−75 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280 SC−75 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280 SC−89 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280 SC−89 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280 SOT−563 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . 280 SOT−563 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . 280 SOT−563 Complementary . . . . . . . . . . . . . . . . . . . . . 280 SC−70 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280 SC−70 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280 SC−88 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280 SC−88 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280 SC−88 Complementary . . . . . . . . . . . . . . . . . . . . . . . . 281 SC−88 Integrated Load Switch P−Channel . . . . . . . 281 ChipFETt N−Channel . . . . . . . . . . . . . . . . . . . . . . . . 281 ChipFET P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . 281 ChipFET Complementary . . . . . . . . . . . . . . . . . . . . . . 281 ChipFET FETKYt N−Channel . . . . . . . . . . . . . . . . . 281 ChipFET FETKY P−Channel . . . . . . . . . . . . . . . . . . . 281 SOT−23 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . 281 SOT−23 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . 282 TSOP−6 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . 282 TSOP−6 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . 282 TSOP−6 Integrated Load Switch P−Channel . . . . . . 282 Micro8t Leadless N−Channel . . . . . . . . . . . . . . . . . . 282 Micro8 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 282 TSSOP−8 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . 282 TSSOP−8 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . 282 SO−8 Flat Lead . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 283 SO−8 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 283 SO−8 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 283 SO−8 Complementary . . . . . . . . . . . . . . . . . . . . . . . . . 283 SO−8 FETKY N−Channel . . . . . . . . . . . . . . . . . . . . . . 283 SO−8 FETKY P−Channel . . . . . . . . . . . . . . . . . . . . . . 283 SOT−223 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . 284 SOT−223 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . 284 DPAK N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 284 DPAK P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285 D2PAK N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285 D2PAK P−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 285 PlnPAKt N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . 285 TO−92 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . 286 TO−220AB N−Channel . . . . . . . . . . . . . . . . . . . . . . . . 286 TO−220AB P−Channel . . . . . . . . . . . . . . . . . . . . . . . . 286 TO−264 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . 286 Ignition IGBT Products . . . . . . . . . . . . . . . . . . . . . . . . . . . 287 SmartDiscretet Products . . . . . . . . . . . . . . . . . . . . . . . . 288 Product Replacement Table . . . . . . . . . . . . . . . . . . . . . . . 289
Standard Logic Devices Family Tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148 Selection by Family Analog Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151 MiniGates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 VHC One−Gates . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 HC One−Gates . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152 LCX One−Gates . . . . . . . . . . . . . . . . . . . . . . . . . . . 153 LCX Two− and Three−Gates . . . . . . . . . . . . . . . . . 153 VCX One Gates . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154 Low Voltage Standard Logic . . . . . . . . . . . . . . . . . . . . 155 VCX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155 VHC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155 LCX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156 LVX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157 5.0 V and Greater Standard Logic . . . . . . . . . . . . . . . 159 High Speed CMOS: HC . . . . . . . . . . . . . . . . . . . . . 159 AC/ACT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161 Metal Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . . . . 164 Logic Special Functions . . . . . . . . . . . . . . . . . . . . . . . 166
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Table of Contents (continued)
Page
Page
Integrated Functions Alphanumeric Parts Index
Integrated Functions Protection Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 297 TVS Arrays in Surface Mount . . . . . . . . . . . . . . . . 297 TVS Low Capacitance Surface Mount for USB 2.0 and 1.1 . . . . . . . . . . . . . . . . . . . . . . 300 TVS Low Capacitance Surface Mount for High Speed Data Lines . . . . . . . . . . . . . . . . 302 EMI Filter Circuits Data Line Protection . . . . . . . . . . . . . . . . . . . . . . . . 303 Audio Line Protection . . . . . . . . . . . . . . . . . . . . . . . 307 USB DATA Line Protection . . . . . . . . . . . . . . . . . . 308 Relay Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310 LED Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 313 Integrated PNP/NPN Digital Transistor Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 313 Inrush Current Limiter . . . . . . . . . . . . . . . . . . . . . . . . . 314 SMART HotPlugt . . . . . . . . . . . . . . . . . . . . . . . . . . 314 Hybrid Diode IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 316 Floating, Regulated Charge Pump . . . . . . . . . . . . . . 316 MOSFET with Buffered Gate . . . . . . . . . . . . . . . . . . . 317 OVP IC with Integrated MOSFET . . . . . . . . . . . . . . . 317
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 318
NOTE: The Tape & Reel Specification information has been moved to its own publication. Please see ON Semiconductor brochure, BRD8011/D, for information on Tape & Reel.
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Analog ICs
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Table of Contents FAMILY TREE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
INTERFACES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
SIGNAL CONDITIONING . . . . . . . . . . . . . . . . . . . . 10
Data Transmission . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103 Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Operational Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Comparators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
SPECIAL FUNCTIONS . . . . . . . . . . . . . . . . . . . . . 105
POWER MANAGEMENT . . . . . . . . . . . . . . . . . . . . . 20
Timers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 Balanced Modulator/Demodulator . . . . . . . . . . . . . . . 105
Battery Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . Charge Controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . Overvoltage Charge Protection . . . . . . . . . . . . . . . . AC−DC/Isolated Switching Controllers . . . . . . . . . . . . . Power Factor Correction . . . . . . . . . . . . . . . . . . . . . . Flyback (Low Power) . . . . . . . . . . . . . . . . . . . . . . . . . Forward (Low Power) . . . . . . . . . . . . . . . . . . . . . . . . . Half−Bridge (Medium Power) . . . . . . . . . . . . . . . . . . Push−Pull (High Power) . . . . . . . . . . . . . . . . . . . . . . DC−DC/Non−Isolated Switching Controllers . . . . . . . . DC−DC Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CPU Controllers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Voltage References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Linear Voltage Regulators . . . . . . . . . . . . . . . . . . . . . . . General Purpose Linear Voltage Regulators . . . . . Low Dropout Linear Voltage Regulators . . . . . . . . . Application Specific Linear Regulators . . . . . . . . . . . . . Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Voltage Supervisory . . . . . . . . . . . . . . . . . . . . . . . . . . . . Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alternator Voltage Regulator Darlington Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . MOSFET/IGBT Drivers . . . . . . . . . . . . . . . . . . . . . . . Load/Relay Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . Dedicated Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20 20 20 27 27 31 45 48 50 54 73 73 74 76 76 79 90 90 96 99
APPLICATION SPECIFIC STANDARD PRODUCTS . . . . . . . . . . . . . . . . . . . 106 Industrial/Appliances/Motor Control . . . . . . . . . . . . . . 107 Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108 Networking/Computing . . . . . . . . . . . . . . . . . . . . . . . . . 114 Wireless & Portable . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115 Smart Cards . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
99 99 99 99
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ON Semiconductor Selector Guide − Analog Integrated Circuits
ON Semiconductor’s Analog Integrated Circuits Power Management
Signal Conditioning Operational Amplifiers
Battery Management
Comparators
Charge Controllers
Interfaces DC−DC Switching Buck (Step−Down)
Timers
Display Drivers
Balanced Modulator/ Demodulator
Boost (Step−Up)
Voltage References Supervisory ICs
Multi−Topology (Step−Up, Down, or Inverting)
Automotive
Transistor Arrays
CPU DC−DC Controllers AC−DC Switching PFC/PWM Combo Controllers
Drivers Power Factor Correction Controllers MOSFET/IGBT Drivers
Industrial / Appliances / Motor Control
Data Transmission
Cuk (Inverting) Overvoltage Charge Protection
ASSP* for . . .
Special Functions
Networking / Computing
Wireless & Portable
Flyback Controllers (Low Power)
Load/Relay Drivers
Forward Controllers (Low Power)
Display Drivers
Half−Bridge Controllers (Medium Power)
Smart Drivers
Push−Pull Controllers (High Power) Linear Voltage Regulators General Purpose Linear Voltage Regulators Low Dropout Linear Voltage Regulators Application Specific Low Dropout Voltage Regulators
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Smart Cards
*ASSP: Application Specific Standard Products
ON Semiconductor Selector Guide − Analog Integrated Circuits
Signal Conditioning
Operational Amplifiers
High Speed MC33272A MC33274A NE592
Low Voltage Rail−to−Rail MC33201 MC33202 MC33204 MC33501 MC33502 MC33503 NCS2001 NCS2002 NCS7101 NE5230
Low Power
High Current
MC33171 MC33172 MC33174 MC33178 MC33179
TCA0372
LM833 MC33077 MC33078 MC33079 MC33178 MC33179 NE5532(A) NE5534(A)
Low Cost General Purpose LM201A LM224 LM258 LM2902
LM2904 LM301A LM324 LM358
Low Noise
MC3303 MC3403
General Purpose
MC33071 MC33072 MC33074 MC34071 MC34072 MC34074
Compandors
NE570 SA571 SA572 SA575
Transconductance Amplifiers NE5517 Digital to Analog Converters DAC−08 MC1408
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ON Semiconductor Selector Guide − Analog Integrated Circuits Single Operational Amplifiers
Device Name
VCC (min) (V)
VCC (max) (V)
GBW (typ) (MHz)
Slew Rate (typ) (V/us)
VIO (max @ 25_C, Vs = 5.0 V) (mV)
IIB (typ) (nA)
ID (typ) (mA)
Temp Range (_C)
CMR (typ) (dB)
en (typical) ǒnVń ǸHzǓ @ f = 1.0 kHz
Number of Channels
Supply Type
LM201A
±3.0
±22
1.0
0.5
2.0
30
1.8
−25 to +85
96
−
1
LM201AV
±3.0
±22
1.0
0.5
2.0
30
1.8
−40 to +105
96
−
LM301A
±3.0
±18
1.0
0.5
7.5
70
1.8
0 to 70
90
MC33071
3.0 or ±1.5
44
4.5
13*
5.0
100
1.6
−40 to +85
MC33071A
3.0 or ±1.5
44
4.5
13*
3.0
100
1.6
MC33171
3.0 or ±1.5
44 or ±22
1.8
2.1
5.0
20
MC33201
1.8 or ±0.9
12
2.2
1.0
6.0
MC33201V
1.8 or ±0.9
12
2.2
1.0
MC33501
1.0 or ±0.5
7.0 or ±3.5
4@ Vs = 5
MC33503
1.0 or ±0.5
7.0 or ±3.5
4@ Vs = 5
Package
Description
Split
DIP−8, SO−8
General Purpose, Precision Non Compensated
1
Split
DIP−8, SO−8
General Purpose, Precision Non Compensated
−
1
Split
DIP−8, SO−8
General Purpose, Non Compensated
97
32
1
Single, Split
DIP−8, SO−8
High SR, Wide BW, Single Supply, *Av = −1.0
−40 to +85
97
32
1
Single, Split
DIP−8, SO−8
High SR, Wide BW, Single Supply, *Av = −1.0
0.18
−40 to +85
90
32
1
Single, Split
DIP−8, SO−8
Low Power, Single Supply, Two Voltage Ranges
80
0.9
−40 to +105
90
20
1
Single, Split
DIP−8, SO−8
Low Voltage, Rail−to−Rail
6.0
80
0.9
−55 to +125
90
20
1
Single, Split
DIP−8, SO−8
Low Voltage, Rail−to−Rail, Extended Temp. Range
3.0
5.0
0.04 pA
1.2 @ Vs = 1 V
−40 to +105
75
30
1
Single, Split
TSOP−5†
One Volt SMARTMOSt, Rail−to−Rail
3.0
5.0
0.04 pA
1.2 @ Vs = 1 V
−40 to +105
75
30
1
Single, Split
TSOP−5†
One Volt SMARTMOS, Rail−to−Rail
†TSOP−5 − Also known as Thin SOT23−5.
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ON Semiconductor Selector Guide − Analog Integrated Circuits Single Operational Amplifiers (continued) VCC (min) (V)
VCC (max) (V)
GBW (typ) (MHz)
Slew Rate (typ) (V/us)
VIO (max @ 25_C, Vs = 5.0 V) (mV)
IIB (typ) (nA)
ID (typ) (mA)
Temp Range (_C)
CMR (typ) (dB)
en (typical) ǒnVń ǸHzǓ @ f = 1.0 kHz
Number of Channels
MC34071
3.0 or ±1.5
44
4.5
13*
5.0
100
1.6
0 to 70
97
32
MC34071A
3.0 or ±1.5
44
4.5
13*
3.0
100
1.6
0 to 70
97
NCS2001
0.9 or ±0.45
7.0 or ±3.5
1.4
1.6
6.0
10 pA
.80
−40 to +105
NCS2002
0.9 or ±0.45
7.0 or ±3.5
0.8
1.2
6.0
10 pA
.80
NCS7101
1.8 or ±0.9
10 or ±5.0
1.0
1.2
7.0
1.0 pA
NCV2002
0.9 or ±0.45
7.0 or ±3.5
0.8
1.2
6.0
NE5230
±0.9 or 1.8
±7.5 or 15
0.6
0.25
NE5534
±3.0
±20
10
NE5534A
±3.0
±20
SA5230
±0.9 or 1.8
SA5534
Device Name
Supply Type
Package
Description
1
Single, Split
DIP−8, SO−8
High SR, Wide BW, Single Supply, *Av = −1.0
32
1
Single, Split
DIP−8, SO−8
High SR, Wide BW, Single Supply, *Av = −1.0
70
100
1
Single, Split
TSOP−5†, SC70−5
One Volt, CMOS Rail−to−Rail
−40 to +105
82
100
1
Single, Split
TSOP−6†
One Volt, CMOS Rail−to−Rail with Enable
1.1
−40 to +85
65 (min)
140
1
Single, Split
TSOP−5†
Low Voltage, Rail−to−Rail
10 pA
.80
−40 to +125
82
100
1
Single, Split
TSOP−6†
One Volt, CMOS Rail−to−Rail with Enable
3.0
40
0.6
0 to 70
95
30
1
Single, Split
SOIC−8, PDIP−8
Single Low Voltage Op Amp
13
4.0*
500
4.0
0 to 70
100
4.0
1
Single, Split
SOIC−8, PDIP−8
Single Low Noise Op Amp
10
13
4.0*
500
4.0
0 to 70
100
3.5
1
Single, Split
SOIC−8, PDIP−8
Single Low Noise Op Amp
±7.5 or 15
0.6
0.25
3.0
40
0.6
−40 to 85
95
30
1
Single, Split
SOIC−8, PDIP−8
Single Low Voltage Op Amp
±3.0
±20
10
13
4.0*
500
4.0
−40 to 85
100
4.0
1
Single, Split
PDIP−8
Single Low Noise Op Amp
SA5534A
±3.0
±20
10
13
4.0*
500
4.0
−40 to 85
100
3.5
1
Single, Split
SOIC−8, PDIP−8
Single Low Noise Op Amp
SE5534
±3.0
±20
10
13
2.0*
400
4.0
−55 to 125
100
4.0
1
Single, Split
PDIP−8
Single Low Noise Op Amp
SE5534A
±3.0
±20
10
13
2.0*
400
4.0
−55 to 125
100
3.5
1
Single, Split
PDIP−8
Single Low Noise Op Amp
†TSOP−5 − Also known as Thin SOT23−5.
http://onsemi.com 12
ON Semiconductor Selector Guide − Analog Integrated Circuits Dual Operational Amplifiers VCC (min) (V)
VCC (max) (V)
GBW (typ) (MHz)
Slew Rate (typ) (V/us)
VIO (max @ 25_C, Vs = 5.0 V) (mV)
IIB (typ) (nA)
ID* (typ) (mA)
Temp Range (_C)
CMR (typ) (dB)
en (typical) ǒnVń ǸHzǓ @ f = 1.0 kHz
Number of Channels
LM258
3.0 or ±1.5
32 or ±18
1.0
0.6
5.0
45
0.7
−25 to +85
85
−
2
LM358
3.0 or ±1.5
32 or ±18
1.0
0.6
7.0
45
0.7
0 to 70
70
−
LM833
±2.5
36
15
7.0
5.0
300
4.0
−40 to +85
100
LM2904
3.0 or ±1.5
26 or ±13
1.0
0.6
7.0
45
0.7
−40 to +105
LM2904V
3.0 or ±1.5
26 or ±13
1.0
0.6
7.0
45
0.7
MC33072
3.0 or ±1.5
44 or ±22
4.5
13*
5.0
100
MC33072A
3.0 or ±1.5
44 or ±22
4.5
13*
3.0
MC33077
±2.5
±18
37
11
MC33078
±5.0
±18
16
MC33172
3.0 or ±1.5
44 or ±22
MC33172V
3.0 or ±1.5
MC33178
±2.0
Device Name
Supply Type
Package
Description
Single, Split
DIP−8, SO−8, Micro8
Low Noise
2
Single, Split
DIP−8, SO−8, Micro8
Low Noise
4.5
2
Single, Split
DIP−8, SO−8
Low Noise
70
−
2
Single, Split
DIP−8, SO−8, Micro8
Low Power
−40 to +125
70
−
2
Single, Split
DIP−8, SO−8, Micro8
Low Power
3.2
−40 to +85
97
32
2
Single, Split
DIP−8, SO−8
High SR, Wide BW, Single Supply, *Av = −1.0
100
3.2
−40 to +85
97
32
2
Single, Split
DIP−8, SO−8
High SR, Wide BW, Single Supply, *Av = −1.0
1 @ Vs = ±15 V
280
3.5
−40 to +85
107
4.4
2
Split
DIP−8, SO−8
Low Noise
7.0
2.0
300
4.1
−40 to +85
100
4.5
2
Split
DIP−8, SO−8
Low Noise
1.8
2.1
5.0
20
0.36
−40 to +85
90
32
2
Single, Split
DIP−8, SO−8
Low Power, Single Supply, Two Voltage Ranges
44 or ±22
1.8
2.1
5.0
20
0.36
−40 to +105
90
32
2
Single, Split
SO−8
Low Power, Single Supply, Two Voltage Ranges, Extended Temp. Range
±18
5.0
2.0
3.0
100
.85
−40 to +85
110
7.5
2
Split
DIP−8, SO−8
High Output Current, Low Power, Low Noise
*ID typical for total device (all channels)
http://onsemi.com 13
ON Semiconductor Selector Guide − Analog Integrated Circuits Dual Operational Amplifiers (continued) VCC (min) (V)
VCC (max) (V)
GBW (typ) (MHz)
Slew Rate (typ) (V/us)
VIO (max @ 25_C, Vs = 5.0 V) (mV)
IIB (typ) (nA)
ID* (typ) (mA)
Temp Range (_C)
CMR (typ) (dB)
en (typical) ǒnVń ǸHzǓ @ f = 1.0 kHz
Number of Channels
MC33202
1.8 or ±0.9
12 or ±6
2.2
1.0
8.0
80
1.8
−40 to +105
90
20
2
MC33202V
1.8 or ±0.9
12 or ±6
2.2
1.0
8.0
80
1.8
−55 to +125
90
20
MC33272A
3.0 or ±1.5
36 or ±18
24
10
1 @ Vs = ±15 V 2 @ Vs = 5.0 V
300
4.30
−40 to +85
100
MC33502
1.0
7.0
5.0
3.0
5.0
0.04 pA
3.3
−40 to +105
MC34072
3.0 or ±1.5
44 or ±22
4.5
13*
5.0
100
3.2
MC34072A
3.0 or ±1.5
44 or ±22
4.5
13*
3.0
100
MC34072V
3.0 or ±1.5
44 or ±22
4.5
13*
5.0
NE592
−8.0
+8.0
90
−
NE5532/A
±3.0
±20
10
Device Name
Supply Type
Package
Description
Single, Split
DIP−8, SO−8, Micro8t
Low Voltage, Rail−to−Rail
2
Single, Split
DIP−8, SO−8
Low Voltage, Rail−to−Rail, Extended Temp. Range
18
2
Single, Split
DIP−8, SO−8
Single Supply, High SR, Low Input Offset Voltage
75
30
2
Single, Split
DIP−8, SO−8
One Volt SMARTMOS, Rail−to−Rail
0 to 70
97
32
2
Single, Split
DIP−8, SO−8
High SR, Wide BW, Single Supply, *Av = −1.0
3.2
0 to 70
97
32
2
Single, Split
DIP−8, SO−8
High SR, Wide BW, Single Supply, *Av = −1.0
100
3.2
−40 to +125
97
32
2
Single, Split
DIP−8, SO−8
High SR, Wide BW, Single Supply, Extended Temp. Range, *Av = −1.0
−
9.0 mA
18
0−70
86
−
2
−
SO−8, 14 PDIP−8, 14
Video Amplifier
9.0
4.0 @ ±15 V
200
8.0
0 to 70
100
8.0
2
Split
DIP−8, SO−8, SO−16W
Low Noise
SA5532
±3.0
±20
10
9.0
4.0 @ ±15 V
200
8.0
−40 to 85
100
8.0
2
Split
DIP−8
Low Noise
SE5532/A
±3.0
±20
10
9.0
2.0 @ ±15 V
200
8.0
−55 to 125
100
8.0
2
Split
DIP−8, SO−8
Low Noise
TCA0372
5.0 or ±2.5
40 or ±20
1.4
1.4
15 @ ±15 V
100
5.0
−40 to +125
90
22
2
Single, Split
SOP (12+2+2) DIP−8, DIP−16
Power, High Current
TCA0372B
5.0 or ±2.5
40 or ±20
1.4
1.4
15 @ ±15 V
100
5.0
−40 to +125
90
22
2
Single, Split
DIP−8, SO−16W
Power, High Current
*ID typical for total device (all channels)
http://onsemi.com 14
ON Semiconductor Selector Guide − Analog Integrated Circuits Quad Operational Amplifiers
VCC (min) (V)
VCC (max) (V)
GBW (typ) (MHz)
Slew Rate (typ) (V/us)
VIO (max @ 25_C, Vs = 5.0 V) (mV)
IIB (typ) (nA)
ID* (typ) (mA)
Temp Range (_C)
CMR (typ) (dB)
en (typical) ǒnVń ǸHzǓ @ f = 1.0 kHz
Number of Channels
LM224
3.0 ±1.5
32 ±16
1.0
0.6
5.0
90
−
−25 to +85
85
−
LM324
3.0 ±1.5
32 ±16
1.0
0.6
7.0
90
−
0 to 70
70
LM324A
3.0 ±1.5
32 ±16
1.0
0.6
3.0
45
0.7
0 to 70
LM2902
3.0 ±1.5
26 ±13
1.0
0.6
7.0
90
−
LM2902V
3.0 ±1.5
26 ±13
1.0
0.6
7.0
90
MC3303
3.0 ±1.5
36 ±18
1.0
0.6
8.0
MC33074
3.0 or ±1.5
44 or ±22
4.5
13*
MC33074A
3.0 or ±1.5
44 or ±22
4.5
MC33079
±5.0
±18
MC33174
3.0 or ±1.5
MC33174V
MC33179
Device Name
Supply Type
Package
Description
4
Single, Split
DIP−14, SO−14
Low Power
−
4
Single, Split
DIP−14, SO−14
Low Power
70
−
4
Single, Split
DIP−14, SO−14
Low Power
−40 to +105
70
−
4
Single, Split
DIP−14, SO−14
Low Power
−
−40 to +125
70
−
4
Single, Split
DIP−14, SO−14
Low Power, Extended Temp. Range
200
2.8
−40 to +85
90
−
4
Single, Split
DIP−14, SO−14
Low Power
5.0
100
6.4
−40 to +85
97
32
4
Single, Split
DIP−14, SO−14, TSSOP−14
High SR, Wide BW, Single Supply, *AV = −1.0
13*
3.0
100
6.4
−40 to +85
97
32
4
Single, Split
DIP−14, SO−14, TSSOP−14
High SR, Wide BW, Single Supply, *AV = −1.0
16
7.0
2.5
300
8.4
−40 to +85
100
4.5
4
Split
DIP−14, SO−14
Low Noise
44 or ±22
1.8
2.1
5.0
20
0.72
−40 to +85
90
32
4
Single, Split
DIP−14, SO−14, TSSOP−14
Low Power, Single Supply, Two Voltage Ranges
3.0 or ±1.5
44 or ±22
1.8
2.1
5.0
20
0.72
−40 to +105
90
32
4
Single, Split
DIP−14, SO−14
Low Power, Single Supply, Two Voltage Ranges, Extended Temp. Range
±2.0
±18
5.0
2.0
3.0
100
1.7
−40 to +85
110
7.5
4
Split
DIP−14, SO−14
High Output Current, Low Power, Low Noise
*ID typical for total device (all channels)
http://onsemi.com 15
ON Semiconductor Selector Guide − Analog Integrated Circuits Quad Operational Amplifiers (continued) VCC (min) (V)
VCC (max) (V)
GBW (typ) (MHz)
Slew Rate (typ) (V/us)
VIO (max @ 25_C, Vs = 5.0 V) (mV)
IIB (typ) (nA)
ID* (typ) (mA)
Temp Range (_C)
CMR (typ) (dB)
en (typical) ǒnVń ǸHzǓ @ f = 1.0 kHz
Number of Channels
MC33204
1.8 or ±0.9
12 or ±6.0
2.2
1.0
10
80
3.6
−40 to +105
90
20
4
MC33204V
1.8 or ±0.9
12 or ±6.0
2.2
1.0
10
80
3.6
−55 to +125
90
20
MC33274A
3.0 or ±1.5
36 or ±18
24
10
1.0 @ Vs = ±15 V 2.0 @ Vs = 5.0 V
300
8.6
−40 to +85
100
MC3403
3.0 ±1.5
36 ±18
1.0
0.6
10
200
2.8
0 to 70
MC34074
3.0 or ±1.5
44 or ±22
4.5
13*
5.0
100
6.4
MC34074A
3.0 or ±1.5
44 or ±22
4.5
13*
3.0
100
MC34074V
3.0 or ±1.5
44 or ±22
4.5
13*
5.0
NCV33274A
3.0 or ±1.5
36 or ±18
24
10
3.5 @ Vs = ±15 V 2.0 @ Vs = ±5.0 V
Device Name
Supply Type
Package
Description
Single, Split
DIP−14, SO−14, TSSOP−14
Low Voltage, Rail−to−Rail
4
Single, Split
DIP−14, SO−14
Low Voltage, Rail−to−Rail, Extended Temp. Range
18
4
Single, Split
DIP−14, SO−14
Single Supply, High SR, Low Input Offset Voltage
90
−
4
Single, Split
DIP−14, SO−14
Low Power
0 to 70
97
32
4
Single, Split
DIP−14, SO−14
High SR, Wide BW, Single Supply, *AV = −1.0
6.4
0 to 70
97
32
4
Single, Split
DIP−14, SO−14
High SR, Wide BW, Single Supply, *AV = −1.0
100
6.4
−40 to +125
97
32
4
Single, Split
DIP−14, SO−14
High SR, Wide BW, Single Supply, *AV = −1.0
300
8.6
−40 to +125
100
18
4
Single, Split
DIP−14, SO−14
Single Supply, High SR, Low Input Offset Voltage
*ID typical for total device (all channels)
http://onsemi.com 16
ON Semiconductor Selector Guide − Analog Integrated Circuits
Signal Conditioning
Comparators
Single
LM211 LM311 NCS2200 NCS2201 NCS2202 NCS2203
Dual LM293 LM393 LM2903
http://onsemi.com 17
Quad
High Speed
LM239 LM339 LM2901 MC3302
MC10E1651 MC10E1652 NE521 NE522
ON Semiconductor Selector Guide − Analog Integrated Circuits Single Comparators VIO (max) (mV)
Iio (max) (nA)
IlB (typ) (nA)
Iq (typ) (mA)
Temp Range (_C)
Response Time (ns)
36 or ±15
3.0
10
45
2.4
−25 to +85
200
5.0 or ±2.5
36 or ±15
7.5
50
45
2.4
0 to 70
NCS2200
0.85 or ±0.425
6.0 or ±3.0
+8.0
−
1.0 pA
10
NCS2201
0.85 or ±0.425
6.0 or ±3.0
+8.0
−
1.0 pA
NCS2202
0.85 or ±0.425
6.0 or ±3.0
+8.0
−
NCS2203
0.85 or ±0.425
6.0 or ±3.0
+8.0
Device Name
VCC (min)
VCC (max)
LM211
5.0 or ±2.5
LM311
Number of Channels
Package
Description
Single Split
1
SO−8
Highly Flexible Voltage
200
Single Split
1
SO−8 DIP−8
Highly Flexible Voltage
−40 to 105
700
Single Split
1
SOT23−5 QFN 2x2.2
Low Voltage CMOS
10
−40 to 105
700
Single Split
1
SOT23−6
Low Voltage CMOS with Enable
1.0 pA
10
−40 to 105
700
Single Split
1
SOT23−5
Low Voltage CMOS
−
1.0 pA
10
−40 to 105
700
Single Split
1
SOT23−6
Low Voltage CMOS with Enable
VIO (max) (mV)
Iio (max) (nA)
IlB (typ) (nA)
Iq* (typ) (mA)
Temp Range (_C)
Response Time (ns)
Number of Channels
Package
Description
Supply Type
Dual Comparators
Device Name
VCC (min)
VCC (max)
LM293
2.0 or ±1.0
36 or ±18
5.0
50
25
0.4
−25 to +85
1300
Single Split
2
SO−8
Low Offset Voltage
LM393
2.0 or ±1.0
36 or ±18
5.0
50
25
0.4
0 to 70
1300
Single Split
2
SO−8 DIP−8
Low Offset Voltage
LM2903
2.0 or ±1.0
36 or ±18
7.0
50
25
0.4
−40 to +105
1500
Single Split
2
SO−8 DIP−8
Low Offset Voltage
LM2903V
2.0 or ±1.0
36 or ±18
7.0
50
25
0.4
−40 to +125
1500
Single Split
2
SO−8 DIP−8
Low Offset Voltage
*Iq typical for total device (all channels)
http://onsemi.com 18
Supply Type
ON Semiconductor Selector Guide − Analog Integrated Circuits Quad Comparators VIO (max) (mV)
Iio (max) (nA)
IlB (typ) (nA)
Iq* (typ) (mA)
Temp Range (_C)
Response Time (ns)
36 or ±18
5.0
50
25
0.8
−25 to +85
1300
Single Split
3.0 or ±1.5
36 or ±18
5.0
50
25
0.8
0 to 70
1300
LM2901
3.0 or ±1.5
36 or ±18
7.0
50
25
0.8
−40 to +105
LM2901V
3.0 or ±1.5
36 or ±18
7.0
50
25
0.8
MC3302
3.0 or ±1.5
30 or ±15
20
100
25
0.8
Device Name
VCC (min)
VCC (max)
LM239
3.0 or ±1.5
LM339
Supply Type
Number of Channels
Package
Description
4
SO−14 DIP−14
TTL and CMOS Compatible
Single Split
4
SO−14 DIP−14
TTL and CMOS Compatible
1300
Single Split
4
SO−14 DIP−14
TTL and CMOS Compatible
−40 to +125
1300
Single Split
4
SO−14 DIP−14
TTL and CMOS Compatible
−40 to +85
1300
Single Split
4
SO−14 DIP−14
TTL and CMOS Compatible
*Iq typical for total device (all channels)
http://onsemi.com 19
ON Semiconductor Selector Guide − Analog Integrated Circuits
Power Management
Battery Management
Overvoltage Charger Protection
Charge Controllers
NCP345 NCP346
NiCd / NiMH MC33340 MC33342 Voltage & Current Regulation MC33341
Single Cell Li−ion NCP1800 NCP1835/B
http://onsemi.com 20
ON Semiconductor Selector Guide − Analog Integrated Circuits
ON Semiconductor Switching Controllers Selection Tables
AC−DC/Isolated Switching Controllers Power Factor Correction
Single−Stage Flyback
Boost Pre−Regulator
Continuous Mode
Continuous Mode
NCP1651
NCP1650
Combo PFC + PWM
Critical Mode/DCM NCP1603
NCP1653 Follower Boost
Critical Mode MC33260 Follower Boost MC33262 MC34262 MC33368 Critical Mode/DCM NCP1601
Our products are also offered in lead−free (Pb−Free) packages. A “G’’ suffix is added at the end of the part number to recognize them. Please consult our web site for more information.
http://onsemi.com 21
CRM: Critical Conduction Mode CCM: Continuous Conduction Mode DCM: Discontinuous Conduction Mode
ON Semiconductor Selector Guide − Analog Integrated Circuits
http://onsemi.com 22
ON Semiconductor Selector Guide − Analog Integrated Circuits
DC−DC/Non−Isolated Switching Controllers
Buck (Step−Down)
Boost (Step−Up)
General
Cuk (Inverting) CS5172 CS5174
General CS5171 CS5173
Sync Rect
External Switch MC33060A MC34060A
Non−Sync Rect
Single, External Switch CS5211# NCP1571 NCP1575
NCP1580 NCP1582
Single, Internal Switch NCV8800*
NCP1595
Internal Switch
External Switch CS51031
With 5 V/100 mA Linear Regulator
CS51033
Internal Switch
CS5112*
CS51411/2/3/4 MC33166/7 MC34166/7 LM2574/5/6
Dual NCP5422
Multi−Topology (Step−Up, Down, or Inverting)
MC33063A MC34063A NCV33063A* MC33163 MC34163 NCV33163* Switching Capacitors (Charge Pumps)
NCP5425
Low Voltage/Low Power
Low Voltage/Low Power
NCP1500 NCP1530 NCP1508 NCP1510A
NCP1400A NCP1403 NCP1410 NCP1422 NCP1450A
NCP1501 NCP1550 NCP1509 NCP1511
NCP1402 NCP1406 NCP1411 NCP1421 NCP1423
MAX828 MAX829 MAX1720 NCP1729 NCP5603
Coming Soon Our products are also offered in lead−free (Pb−Free) packages. A “G’’ suffix is added at the end of the part number to recognize them. Please consult our web site for more information.
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*Automotive #Computer
ON Semiconductor Selector Guide − Analog Integrated Circuits
PWM Topology Overview Buck
Boost L
L Ton
Toff Vin Ts
Duty Cycle + D +
DȀ + 1 * D +
+ −
C
Ton T + on Ton ) Toff Ts
Vout
R
Vin
+ −
C
Vout + 1 Vin DȀ
Vout + DVin
Toff T + off Ton ) Toff Ts
Attributes:
Attributes:
Step up only Used for power factor correction MOSFET stress = Vout
Step down only MOSFET stress = Vin
NOTE: In all circuits, equations for Vout apply to the continuous conduction case.
Buck−Boost
Flyback n:1 −
Vin
+ −
C
R +
C
L
Vout Vin
R
+ −
Vout + * D Vin DȀ
Vout + D Vin nDȀ
Attributes: Inverted output Step up or step down MOSFET stress = Vin − Vout
Attributes: Step up, step down, or inverting Up to 100 W power level MOSFET stress u Vin
http://onsemi.com 24
Vout
R
Vout
ON Semiconductor Selector Guide − Analog Integrated Circuits
PWM Topology Overview (continued) Two−Transistor Forward
Forward L n:1
L C
m Vin
R Vout n:1
+ −
Vin
+ −
Lp
C
R Vout
Vout + D n Vin Vout + D n Vin D max + 0.5 Attributes: Step up, step down, or inverting More complex transformer Reset winding is needed (m t n) Potentially more than 50% duty cycle Up to 200 W power level MOSFET stress u Vin
Attributes: Step up, step down, or inverting Up to 500 W power level Simple transformer construction Primary winding is also the reset winding, so duty cycle t 50% MOSFET stress = Vin
Active Clamp Forward
Push−Pull L
− +
n:1
C Vin
L
n n
R Vout Vin
+ −
1 1
C
+ − Vout + D n Vin
Vout + D n Vin
Attributes:
Attributes:
Step up, step down, or inverting Simple transformer construction Potentially more than 50% duty cycle Up to 500 W power level MOSFET stress > Vin
Step up, step down, or inverting Useful for low input voltage applications Up to 1.0 kW power level More complex transformer Duty cycle t 50% MOSFET stress = 2.0 Vin
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R Vout
ON Semiconductor Selector Guide − Analog Integrated Circuits
PWM Topology Overview (continued) Half−Bridge
Full−Bridge
L
Vin
+ −
n
L
1 1
R Vout
C
Vin
+ −
1 1
n
Vout + D Vin 2n
Attributes: High power applications Step up, step down, or inverting Up to 2.0 kW power level Duty cycle t 50% Phase−shifted version possible for high density Current doubler version useful for very high output currents MOSFET stress = Vin
SEPIC (Single−Ended Primary Inductor Converter)
Vin
C4uk (By Slobodan C4uk)
−
+ −
R Vout
Vout + D n Vin
Attributes: Step up, step down, or inverting Alternative to 2−transistor forward Up to 500 W power level Duty cycle t 50% MOSFET stress = Vin
+
C
+
C
Vin
R Vout
Vout + D Vin DȀ
−
+ −
C
Vout + * D Vin DȀ Attributes: Inverted output Step up or step down MOSFET stress u Vin and Vout
Attributes: Step up or step down MOSFET stress = Vin + Vout
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R Vout
ON Semiconductor Selector Guide − Analog Integrated Circuits
CRM: Critical Conduction Mode CCM: Continuous Conduction Mode DCM: Discontinuous Conduction Mode
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ON Semiconductor Selector Guide − Analog Integrated Circuits PFC/PWM Combo Controllers Power Level
PFC Stage
PWM Stage
Up to 200 W
Integrated single−stage CCM or DCM flyback
Up to 250 W
100 kHz 80% max duty DCM/CCM flyback
Fixed−frequency DCM or critical mode
Temp. Range −40 to +125°C (TJ)
−40 to +125°C (TJ)
Package
SO−16
SO−16
CRM: Critical Conduction Mode CCM: Continuous Conduction Mode DCM: Discontinuous Conduction Mode
http://onsemi.com 28
Part No.
Features
NCP1651DR2
S S S S
Lossless 500 V startup Programmable frequency 20 to 250 kHz External shutdown Thermal shutdown (110/140_C)
NCP1603D100R2
S S S S S
Lossless 500 V startup PFC section shutdown while standby PWM section in skipping cycle operation while standby Optional synchronization capability Optional OVP latch
ON Semiconductor Selector Guide − Analog Integrated Circuits
CRM: Critical Conduction Mode CCM: Continuous Conduction Mode DCM: Discontinuous Conduction Mode
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ON Semiconductor Selector Guide − Analog Integrated Circuits Power Factor Correction Controllers Power Level
PFC Methodology
Voltage−mode boost
Operating Mode
Fixed frequency DCM or critical mode
Temp. Range
−40 to +125°C (TJ)
Part No.
SO−8
NCP1601ADR2
DIP−8
NCP1601AP
SO−8
NCP1601BDR2
DIP−8
NCP1601BP
SO−8
MC33260DR2
DIP−8
MC33260P
SO−8
MC33262DR2
DIP−8
MC33262P
SO−8
MC34262D
DIP−8
MC34262P
SO−16
MC33368DR2
DIP−16
MC33368P
SO−8
NCP1653DR2
DIP−8
NCP1653P
−40 to +105°C (TJ)
Follower boost Up to 400 W Critical conduction mode
−40 to +105°C (TA) 0 to +85°C (TA)
Peak current−mode boost
−25 to +125°C (TA)
Average current−mode or peak I−mode follower boost
Package
100 kHz CCM
−40 to +125_C (TJ)
Up to 3.0 kW Average current−mode boost
Fixed frequency CCM or DCM
−40 to +125_C (TJ)
SO−16
CRM: Critical Conduction Mode CCM: Continuous Conduction Mode DCM: Discontinuous Conduction Mode
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NCP1650DR2
Features S S S S S S
Synchronization capability or programmable frequency Overvoltage protection Programmable overcurrent protection Thermal shutdown (95/140_C) NCP1601A: VCC UVLO = 4.75 V NCP1601B: VCC UVLO = 1.5 V
S S S S S S
Fixed 500 kHz frequency clamp Programmable overcurrent limitation Overvoltage protection Undervoltage protection Maximum on−time limitation Thermal shutdown (120/150_C)
S Overcurrent limitation S Restart delay after fault S Overvoltage protection
S S S S
All features of MC33262 Lossless 500 V startup Programmable restart delay Programmable frequency clamp
S S S S S
Overvoltage protection Undervoltage protection or shutdown Programmable overcurrent protection Programmable overpower limitation Thermal Shutdown (120/150_C)
S True power limiting circuit maintains excellent power factor in constant power mode S 25 to 250 kHz fixed frequency S Overvoltage protection S Brownout protection S External shutdown
ON Semiconductor Selector Guide − Analog Integrated Circuits
auto tag
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ON Semiconductor Selector Guide − Analog Integrated Circuits Flyback Regulators (Integrated High−Voltage Startup, Internal Switch, Fixed Freq., Dynamic Self Supply) IC Operating Voltage
Startup Limits
Switch
Output Voltage
30/ 700 V
Temp.
DIP−7
NCP1010APxx NCP1010STxxT3
700 V
DIP−7
700 V 250 mA
(External ref.)
PWM I−mode/ Skip cycle standby
16.8/ 200 V
Typ. 22 W
SOT−223 0 to +125_C (TJ)
DIP−7 SOT−223
67%
DIP−7
Suffix xx = 06, 10, or 13 for 65, 100, or 130 kHz
SOT−223
NCP1011APxx NCP1011STxxT3 NCP1012APxx NCP1012STxxT3
Typ. 11 W
NCP1013APxx
700 V
DIP−7
NCP1014APxx
SOT−223
NCP1014STxxT3
700 V
DIP−7
NCP1050Pxx
100 mA
SOT−223
NCP1050STxxT3
700 V
DIP−7
200m A
SOT−223
700 V
DIP−7
300m A 700 V
(Vref = external or 4.6 V)
Burst mode V−mode
−40 to +125_C (TJ)
SOT−223 DIP−7
77%
SOT−223
700 V
DIP−7
530m A
SOT−223
Suffix xx = 44, 100, or 136 for 44, 100, or 136 kHz
Typ. 22 W
NCP1051Pxx NCP1051STxxT3 NCP1052Pxx NCP1052STxxT3
Typ. 10 W
NCP1054Pxx NCP1054STxxT3
DIP−7
NCP1055Pxx
SOT−223
NCP1055STxxT3
200 V 1.0 A
(Vref = 2.5 V)
PWM V−mode
Micro8t 75% SO−8
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Up to 1.0 MHz
S Frequency jittering reduces EMI S Auto restart fault protection S Thermal shutdown (85/160_C) S Standby operation due to burst mode
NCP1053STxxT3
700 V
−40 to +125_C (TJ)
S All features in NCP105x and... S Latching overvoltage protection (needs auxiliary winding) S Thermal shutdown (100/150_C) S Gullwing package is coming soon
NCP1053Pxx
680 mA 200 V 0.5 A
Features
NCP1013STxxT3
450 mA
400 mA
UVLO: 6.6/7.6/ 10.2 V Max: 16 V
Part No.
SOT−223
350 mA
20/ 700 V
Freq.
700 V
700 V
UVLO: 4.5/7.5/ 8.5 V Max: 10 V
Package
RDS(ON) @ TJ = 255C
100 mA
250 mA UVLO: 4.7/7.5/ 8.5 V Max: 10 V
Control
Max. Duty
Typ. 4.1 W
NCP1030DMR2
Typ. 2.1 W
NCP1031DR2
S External Synchronization S Thermal shutdown (105/150_C) S Line UV/ OV shutdown
ON Semiconductor Selector Guide − Analog Integrated Circuits
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ON Semiconductor Selector Guide − Analog Integrated Circuits Flyback Regulators (Integrated High−Voltage Startup, Internal Switch, Fixed Freq., No Dynamic Self Supply) IC Operating Voltage
Startup Limits
Switch
UVL: 9.5/15.2 V Max: 40 V
TBD/ 500 V
700 V 0.72 A
UVLO: 9.5/14.9 V Max: 40 V
TBD/ 500 V
700 V 0.9 A
UVLO: 9.5/14.5 V Max: 40 V
TBD/ 400 V
Output Voltage
Control
Temp.
Package
Max. Duty
Freq.
Typ. 15 W
SO−16W (Vref = 2.6 V)
PWM V−mode
−25 to +150_C (TJ)
DIP−16 SO−16W
50%
Up to 300 kHz
DIP−16
500 V 0.9 A
20/ 700 V*
700 V 1.0 A
SO−16W
(External ref.)
PWM V−mode
−40 to +125_C (TJ)
DIP−8
72%
700 V 1.5 A
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Typ. 7.5 W Typ. 4.4 W
700 V 0.5 A UVLO: 7.5/8.5 V Max: 10 V
RDS(ON) @ TJ = 255C
100 kHz
Part No. MC33363BDW MC33363AP
Features S OVP S Thermal shutdown (145/155_C for 63A & 62, 105/135_C for 63B)
MC33363ADW MC33362P MC33362DW
Typ. 13 W
NCP1000P
Typ. 7.0 W
NCP1001P
Typ. 4.0 W
NCP1002P
S Opto fail−safe shutdown (OVP) S *(700 V is guaranteed by design) S Thermal shutdown (110/140_C)
ON Semiconductor Selector Guide − Analog Integrated Circuits
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ON Semiconductor Selector Guide − Analog Integrated Circuits Flyback Controllers (Integrated High−Voltage Startup, External Switch, Fixed Freq., No Dynamic Self Supply) IC Operating Voltage UVLO: 6.6/ 10/13.1 V Max: 16 V
UVLO: 4.9/ 7.8/ 12 V Max: 16 V
Startup Limits 50/ 500 V
30/ 500 V
Output Voltage (External ref.)
(External ref.)
Control PWM V−mode /Sec reconfig standby
PWM I−mode/ Skip cycle standby
Temp. −25 to +85_C (TA)
Drive Output
Max. Duty
Freq. 40
TBD
82%
80%
60 100
65 UVLO: 5.6/ 7.6/ 12.8 V Max: 16 V
TBD/ 500 V
(External ref.)
PWM I−mode/ Skip cycle standby
0 to +125_C (TJ)
500 mA
74%
100
133
65 UVLO: 5.6/ 7.7/ 12.6 V Max: 18 V
20 500 V
(External ref.)
PWM I−mode/ Skip cycle standby
−40 to +125_C (TJ)
MC44608P40
75
250 mA
+500/ −800 mA
80%
100 133
MC44608P75 DIP−8
NCP1203P40
SO−8
NCP1203D40R2
DIP−8
NCP1203P60
SO−8
NCP1203D60R2
DIP−8
NCP1203P100
SO−8
NCP1203D100R2
DIP−7
NCP1217P65
SO−8
NCP1217D65R2
DIP−7
NCP1217P100
SO−8
NCP1217D100R2
DIP−7
NCP1217P133
SO−8
NCP1217D133R2
DIP−7
NCP1230P65
SO−8
NCP1230D65R2
DIP−7
NCP1230P100
SO−8
NCP1230D100R2
DIP−7
NCP1230P133
SO−8
NCP1230D133R2
80% UVLO: 11.2/ 16.4 V Max: 36 V
TBD/ 500 V
(External ref.) (*)
PWM I−mode/ Skip cycle standby
0 to +125_C (TJ)
Part No.
DIP−8
40 0 to +125_C (TJ)
Package
NCP1239FDR2 Adjustable up to 250 kHz
+500/ −800 mA Pro− gram− mable
SO−16 NCP1239VDR2
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Features S Overcurrent limitation S Over VCC protection S Overtemperature protection with hysteresis (130_C/160_C) S Modification of NCP1200A without DSS S Thermal shutdown (140/170_C)
S Internal ramp compensation S Latching OVP protection S Thermal shutdown (125/155_C)
S Event management scheme disables PFC_VCC output during standby, or overload condition S Latching OVP protection S Thermal shutdown (140/165_C) S Filtering dithering for EMI
S S S S S S S S S
Go−to−standby signal for PFC Adjustable skip−cycle capability Selectable soft−start period Thermal shutdown (110/140_C) Frequency dithering for EMI Brown−out protection Internal ramp compensation (*) 5.0 V reference Adjustable Over Power Compensation (NCP1239F) S Programmable Maximum Duty Cycle (NCP1239V)
ON Semiconductor Selector Guide − Analog Integrated Circuits
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ON Semiconductor Selector Guide − Analog Integrated Circuits Flyback Controllers (Integrated High−Voltage Startup, External Switch, Fixed Freq., Dynamic Self Supply) IC Operating Voltage
Startup Limits
Output Voltage
Control
Temp.
Drive Output
Max. Duty
Freq. (kHz)
Package
Part No.
Features
DIP−8
NCP1200P40
SO−8
NCP1200D40R2
S Adjustable peak skipping current for low level of audible noise S Internal output short−circuit protection S Thermal shutdown (140_C) S Frequency jittering
40 UVLO: 6.3/9.8/ 11.4 V Max: 16 V
30/ 500 V
(External ref.)
PWM I−mode/ Skip cycle standby
−25 to +125_C (TJ)
250 mA
80%
60 100
UVLO: 10.5/ 12.5 V Max: 16 V
TBD/ 500 V
(External ref.)
PWM I−mode/ Skip cycle standby
−25 to +125_C (TJ)
30/ 500 V
(External ref.)
PWM I−mode/ Skip cycle standby
0 to +125_C (TJ)
NCP1200P60
SO−8
NCP1200D60R2
DIP−8
NCP1200P100
SO−8
NCP1200D100R2
DIP−8
NCP1201P60
SO−8
NCP1201D60R2
60 250 mA
83% 10
65 UVLO: 5.6/10/ 12.2 V Max: 16 V
DIP−8
500 mA
75%
100
133
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DIP−8
NCP1201P100
SO−8
NCP1201D100R2
DIP−7
NCP1216P65
SO−8
NCP1216D65R2
DIP−7
NCP1216P100
SO−8
NCP1216D100R2
DIP−7
NCP1216P133
SO−8
NCP1216D133R2
S Modification of NCP1200A with Brownout Detect Protection, BOK function but fixed skip−cycle level S Latch−off fault protection S Frequency jittering S Internal ramp compensation S Thermal shutdown (125/155_C)
ON Semiconductor Selector Guide − Analog Integrated Circuits Flyback Controllers (Integrated High−Voltage Startup, External Switch, Variable Freq., Dynamic Self Supply) IC Operating Voltage
UVLO: 10/12 V Max: 16 V
Startup Limits
40/ 500 V
Output Voltage
(External ref.)
Control
I−mode/ Skip cycle standby
Temp.
0 to +125_C (TJ)
Option
Package
8.0 ms minimum off−time Freq Clamp
Part No.
SO−8
NCP1207ADR2
DIP−8
NCP1207AP
Features S Dynamic Self−Supply which needs no auxiliary winding and startup resistor S Adjustable skip−cycle capability S Thermal shutdown (125/155_C) S Latched overvoltage protection S 500 mA output peak current capability S Thermal shutdown
Flyback Controllers (Integrated High−Voltage Startup, External Switch, Variable Freq., No Dynamic Self Supply) IC Operating Voltage
UVLO: 7.6/15 V Max: 16 V
UVLO: 7.2/15 V Max: 45 V
UVLO: 7.5/12.5 V Max: 16 V
UVLO: 7.5/8.4 V Max: 16 V
Startup Limits
TBD/ 700 V
TBD/ 500 V
40/ 500 V
TBD/ 500 V
Output Voltage
(External ref.)
(Vref = 2.5 V)
(External ref.)
(External ref.)
Control
Temp.
I−mode/ Critical mode
−25 to +125_C (TJ)
I−mode/ Freq foldback standby
−25 to +125_C (TJ)
I−mode/ Skip cycle standby
0 to +125_C (TJ)
I−mode/ Skip cycle standby
0 to +125_C (TJ)
Option
Package
Part No.
Variable FC
SO−16
MC33364D
Fixed FC
MC33364D1 SO−8
No Freq Clamp (FC)
MC33364D2
−
DIP−8
NCP1205P
Adjustable OVP
DIP−14
NCP1205P2
SO−16
NCP1205DR2
(*) 4.5 ms/ 8.0 ms
DIP−7
NCP1377P
SO−8
NCP1377DR2
(*) 1.5 ms/ 3.0 ms
DIP−7
NCP1377BP
SO−8
NCP1377BDR2
DIP−7
NCP1378P
SO−8
NCP1378DR2
8.0 ms minimum off−time Freq Clamp
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Features S Overcurrent limitation S Thermal shutdown (130/180_C) S Restart delay after fault
S 250 mA output peak current capability S Adjustable maximum switching frequency
S (*) The time are sampling delay for OVP and minimum off−time S Thermal shutdown (125/155_C)
S NCP1377 with lower OVP level (5.2 V against 7.2 V) S Thermal shutdown (125/155_C)
ON Semiconductor Selector Guide − Analog Integrated Circuits
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ON Semiconductor Selector Guide − Analog Integrated Circuits Flyback Controllers (External Startup, UC3843 Pin−Compatible) IC Max Operating Voltage
UVLO
40 V
7.4/ 8.0 V
Max. Duty
Temp. (TA)
DIP−8
−40 to +85°C
1.0 mA
CS2841BEN8
CS2841BED14
1.0 mA
UC3842AN
UC3842ADR2
0.5 mA
UC3842BN
1.0 mA
UC2842AN
0.5 mA
UC2842BN
0 to +70°C 10/16 V
−25 to +85°C Typ. 96%
−40 to +105°C
UC2842ADR2 UC2842BD1R2
UC2842BDR2
UC3842BVD1R2 UC3843BN
UC3843BD1R2
UC3843BDR2
1.0 mA
UC2843AN
UC2843AD1R2
UC2843ADR2
0.5 mA
UC2843BN
UC2843BD1R2
UC2843BDR2
−40 to +105°C
0.5 mA
UC3843BVN
UC3843BVD1R2
UC3843BVDR2
−40 to +125°C
0.5 mA
−25 to +85°C
50%
UC3842BDR2
0.5 mA
0 to +70°C 10/16 V
UC3842BD1R2
SO−14
UC3843AN
−25 to +85°C
30 V
0.5 mA
SO−8
1.0 mA
0 to +70°C 7.6/8.4 V
Package/Part No.
Max. Startup Current
−40 to +105°C 0 to +70°C
7.6/ 8.4 V −25 to +85°C −40 to +105°C
NCV3843BVDR2
1.0 mA
UC3844N
0.5 mA
UC3844BN
1.0 mA
UC2844N
0.5 mA
UC3844DR2 UC3844BD1R2
UC3844BDR2
UC2844BN
UC2844BD1R2
UC2844BDR2
0.5 mA
UC3844BVN
UC3844BVD1R2
UC3844BVDR2
1.0 mA
UC3845N
0.5 mA
UC3845BN
1.0 mA
UC2845N
UC2844DR2
UC3845DR2 UC3845BD1R2
UC3845BDR2 UC2845DR2
0.5 mA
UC2845BN
UC2845BD1R2
UC2845BDR2
0.5 mA
UC3845BVN
UC3845BVD1R2
UC3845BVDR2
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UC3843ADR2
ON Semiconductor Selector Guide − Analog Integrated Circuits
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ON Semiconductor Selector Guide − Analog Integrated Circuits Flyback Controllers (External Startup, Non−UC3843 Pin−Compatible) IC Operating Voltage
Freq.
Temp. (TA)
Output Voltage
Drive Capability
Up to 250 kHz UVLO: 7.5/9.0/14.5 V Max: 18 V
80% −25 to +85_C
(Vref = 2.5 V)
75%
−40 to +85_C
(Vref = 1.263 V) (*)
Control
Fixed freq. or critical mode with standby
750 mA
Up to 250 kHz or SYNC
UVLO: 3.8/4.6 V Max: 15 V
Max. Duty
1.0 A
85%
Fixed freq or critical mode
PWM Feed−forward V−mode
Package
Part No.
SOP−16
MC44603DW
DIP−16
MC44603P
SOP−16
MC44603ADW
DIP−16
MC44603AP
DIP−16
MC44604P
DIP−16
SO−16
MC44605P
CS51221EDR16
Up to 1.0 MHz CS51021AEDR16 UVLO: 7.7/8.25 V Max: 20 V
−40 to +85_C
(Vref = 2.515 V)
1.0 A
77%
PWM I−mode
SO−16 CS51022AED16
UVLO: 10/15 V OVLO: 25 V Max: 28 V
Up to 200 kHz
−25 to +105_C (TJ)
(External ref.)
100 mA sink 300 mA source
48%/ 82%
PWM I−mode
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DIP−8
NCP1212P
SO−8
NCP1212DR2
Features S S S S S S
Overvoltage protection Thermal shutdown Programmable soft−start Foldback pin for overload protection Adjustable maximum duty Low switching frequency in standby (not for MC44604 which goes to pulse mode in standby)
S Overvoltage protection S Winding short circuit detection programming S Overheating detection S Programmable soft−start S Maximum power limitation S S S S S S
Low startup current (1000
530
180
SO−8/TSSOP−8
MC100EPT25
LVNECL/NECL
LVTTL
3.3/−3.3 to −5.2
1
275
1100
1100/1400 (0.8−2.0 V)
SO−8/TSSOP−8
Device(s)
MC100EPT26
LVPECL
LVTTL
3.3
1
275
1500
900
SO−8/TSSOP−8
MC100EPT622
LVTTL/LVCMOS
PECL (10−Bit)
3.3
1
1500
450
250
LQFP−32
MC100LVEL90
LVNECL/NECL
LVPECL
0.66
3
650
500
500
SO−20
MC100LVEL91
LVPECL/PECL
LVNECL
3.3/5
3
600
620
580
MC100LVEL92
PECL
LVPECL
3.3/5
3
600
610
580
SO−20
MC100LVELT22
LVTTL/LVCMOS
LVPECL
3.3
2
100 MHz (min)*
350
500
SO−8/TSSOP−8
MC100LVELT23
LVPECL
LVTTL
3.3
2
>180
1700
600/900 (0.8−2.0 V)
SO−8/TSSOP−8
MC10ELT20
TTL
PECL
5
1
100 MHz (min)*
1200
1500
SO−8/TSSOP−8
MC10ELT21
PECL
TTL
5
1
TBD
5500
750 (10%−90%)
SO−8/TSSOP−8
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ON Semiconductor Selector Guide − Clock and Data Management Devices
Signal Translators (continued) (Specifications are at 25°C unless otherwise stated) From
To
Voltage
# of Channels
Freq. (Typ) MHz
Prop. Delay (Typ) ps
Tr & Tf (Max) ps
Package
MC10ELT22
TTL
PECL
5
2
100MHz (min)*
1200
1600
SO−8/TSSOP−8
MC10ELT24
TTL
NECL
5
1
400
950
1250
SO−8/TSSOP−8
MC10ELT25
NECL
TTL
5/−5.2
1
100
3300*
2300 (10%−90%)
SO−8/TSSOP−8
MC10ELT28
PECL to TTL & TTL to PECL (Dual)
PECL to TTL & TTL to PECL (Dual)
5
2
100
3500 PECL−to−TTL/ 1200 TTL−to−PECL
1500
SO−8/TSSOP−8
MC10EP90
LVNECL/NECL
LVPECL/PECL
0.66
3
>3000
260
180
SO−20
Device(s)
MC10EPT20
LVTTL/LVCMOS
LVPECL
3.3
1
>1000
370
180
SO−8/TSSOP−8
NB100ELT23L
LVPECL
LVTTL
3.3
2
275
2.1
1300
SO−8/TSSOP−8
NB100LVEP91
LVPECL/LVTTL/ LVCMOS/HSTL/ CML/LVDS
LVNECL/NECL
2.5/3.3
3
2500
430
85 (typ)
SO−20, QFN−24
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ON Semiconductor Selector Guide − Clock and Data Management Devices
Clock Distribution (Specifications are at 25°C unless otherwise stated) Input Clock
Output Clock
Voltage
# of Input Channels
# of Outputs per Channel
Frequency (Typ) GHz
Output−to−Output Skew (Max) ps
Cycle−to−Cycle Jitter (Typ/Max) ps
Tr & Tf (Max) ps
Package
MC100E111
ECL/PECL
ECL/PECL
5
MC100E210
ECL/PECL
ECL/PECL
5
1
9
>1.5
50
0.2
600
PLCC−28
2
4/5
0.7
75
0.2
600
PLCC−28
MC100E211
ECL/PECL
ECL/PECL
MC100E310
ECL/PECL
ECL/PECL
5
1
6
>1.5
75
0.2
400
PLCC−28
5
1
8
1
50
0.2
600
PLCC−28
MC100EL11
ECL/PECL
ECL/PECL
5
1
2
2
5
0.2
350
SO−8, TSSOP−8
MC100EL13 MC100EL14
ECL/PECL
ECL/PECL
5
2
3
1
50
0.2
500
SO−20
ECL/PECL
ECL/PECL
5
1
5
1
50
0.2
500
SO−8, TSSOP−8
MC100EL15
ECL/PECL
ECL/PECL
5
1
4
1
50
0.2
575
SO−16
MC100EP11
ECL/PECL
ECL/PECL
3.3/5
1
2
>3
20
0.2
180
SO−8, TSSOP−8
MC100EP14
ECL/PECL/HSTL
ECL/PECL
3.3/5
1
5
>2
45
0.2
270
TSSOP−20
Device(s)
MC100EP210S
LVDS/PECL
LVDS
3.3
2
5
>1
20
0.2
225
LQFP−32
MC100EP809
ECL/PECL/HSTL
HSTL
3.3
1
9
>0.75
15
1.4
600
LQFP−32
MC100LVE111
ECL/PECL
ECL/PECL
3.3
1
9
>1.5
20
0.2
600
PLCC−28
MC100LVE210
ECL/PECL
ECL/PECL
3.3
2
4/5
0.7
75
0.2
600
PLCC−28
MC100LVE310
ECL/PECL
ECL/PECL
3.3
1
8
1.5
50
0.2
600
PLCC−28
MC100LVEL11
ECL/PECL
ECL/PECL
3.3
1
2
>3
20
0.2
180
SO−8, TSSOP−8
MC100LVEL13
ECL/PECL
ECL/PECL
3.3
2
3
1
50
0.2
500
SO−20
MC100LVEL14
ECL/PECL
ECL/PECL
3.3
1
5
>1
50
0.2
500
SOIC−20
MC100LVEP11
ECL/PECL
ECL/PECL
2.5/3.3
1
2
>3
20
0.2
180
SO−8, TSSOP−8
MC100LVEP111
ECL/PECL
ECL/PECL
2.5/3.3
1
10
>3
25
0.2
150
LQFP−32
MC100LVEP14
ECL/PECL/HSTL
ECL/PECL
2.5/3.3
1
5
>2
25
0.2
250
TSSOP−20
MC100LVEP210
ECL/PECL/HSTL
ECL/PECL
2.5/3.3
2
5
>3
20
0.2
270
LQFP−32
MC10E111
ECL/PECL
ECL/PECL
5
1
9
>1.5
50
0.2
600
PLCC−28
MC10E211
ECL/PECL
ECL/PECL
5
1
6
>1.5
75
0.2
400
PLCC−28
MC10E411
ECL/PECL
ECL/PECL
5
1
9
1
50
0.2
600
PLCC−28
MC10EL11
ECL/PECL
ECL/PECL
5
1
2
2
5
0.2
350
SO−8, TSSOP−8
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ON Semiconductor Selector Guide − Clock and Data Management Devices
Clock Distribution (continued) (Specifications are at 25°C unless otherwise stated) Voltage
# of Input Channels
# of Outputs per Channel
Frequency (Typ) GHz
Output−to−Output Skew (Max) ps
Cycle−to−Cycle Jitter (Typ/Max) ps
Tr & Tf (Max) ps
Package
ECL/PECL
5
1
ECL/PECL
3.3/5
1
4
1
50
0.2
575
SO−16
2
>3
20
0.2
180
SO−8, TSSOP−8
ECL/PECL
ECL/PECL
2.5/3.3
1
2
>3
20
0.2
180
SO−8, TSSOP−8
NB100EP223
ECL/PECL/HSTL
HSTL
3.3
1
22
>0.5
25
0.2
700
LQFP−64
NB100LVEP221
ECL/PECL/HSTL
NB100LVEP224
ECL/PECL
ECL/PECL
2.5/3.3
1
20
>1
20
0.2
200 (typ)
LQFP−52
ECL/PECL
2.5/3.3
1
24
>1
15
0.2
160 (min)
LQFP−64
NBSG11
ECL/TTL/CMOS/ CML/LVDS
RSPECL/RSECL
2.5/3.3
1
2
>12
15
0.5
30
FCBGA−16
NBSG111
ECL/PECL/TTL/ CMOS/CML/LVDS
RSPECL/RSECL
2.5/3.3
1
10
>6
15 (typ)
0.2
40 (typ)
FCBGA−14
NBSG14
ECL/PECL/TTL/ CMOS/CML/LVDS
RSPECL/RSECL
2.5/3.3
1
5
12
15
0.5
55
FCBGA−16
NB6L11
LVPECL, LVDS, CML, LVCMOS or LVTTL
LVECL/LVPECL
2.5, 3.3
1
2
>6
15
0.2
120
SO−8, TSSOP−8
NB7L11M
ECL/TTL/ CMOS/CML/LVDS
CML
2.5/3.3
1
2
>8
15
0.2
60
QFN−16
NB7L14M
ECL/TTL/ CMOS/CML/LVDS
CML
2.5/3.3
1
5
>8
15
0.2
60
QFN−16
NB7L111M
ECL/TTL/ CMOS/CML/LVDS
CML
2.5/3.3
1
10
>5.5
20
0.2
75
QFN−52
Device(s)
Input Clock
Output Clock
MC10EL15
ECL/PECL
MC10EP11
ECL/PECL
MC10LVEP11
http://onsemi.com 124
ON Semiconductor Selector Guide − Clock and Data Management Devices
Clock Generation (Specifications are at 25°C unless otherwise stated) Output
Frequency Division
# of Channels
Outputs per Bank
Voltage
Frequency (Typ) GHz
Propagation Delay (Typ) ps
Cycle−to−Cycle Jitter (Typ/Max) ps
Tr & Tf (Max) ps
MC100EL32
ECL/PECL
Div2
1
1
5
>3
510
0.2 / 1.0
350
SO−8, TSSOP−8
MC100EL33
ECL/PECL
Div4
1
1
5
>4
650
1.0 (typ)
350
SO−8, TSSOP−8
MC100EL34
ECL/PECL
Div2, Div4, Div8
1
1+1+1
5
1.1
1000
1
750
0.2 / 1.0
275
SO−20, TSSOP−20
MC100EP32
ECL/PECL
Div2
1
1
3.3/5
>4
350
0.2 / 1.0
170
SO−8, TSSOP−8
MC100EP33
ECL/PECL
Div4
1
1
3.3/5
>4
320
0.2 / 1.0
180
SO−8, TSSOP−8
MC100LVE222
ECL/PECL
1:15 Diff. Div1, Div2
2
15
3.3
1.5
1180
0.2 / 1.0
600
TQFP−52
MC100LVEL32
ECL/PECL
Div2
1
1
3.3
>2.6
510
0.2 / 1.0
320
SO−8, TSSOP−8
MC100LVEL33
ECL/PECL
Div4
1
1
3.3
>4
630
0.2 / 1.0
320
SO−8, TSSOP−8
MC100LVEL34
ECL/PECL
Div2, Div4, Div8
1
1+1+1
3.3
1.5
700
4
650
1.0 (typ)
350
SO−8, TSSOP−8
MC10EL34
ECL/PECL
Div2, Div4, Div8
1
1+1+1
5
1.1
1000
1
750
0.2 / 1.0
275
SO−20, TSSOP−20
MC10EP32
ECL/PECL
Div2
1
1
3.3/5
>4
350
0.2 / 1.0
170
SO−8, TSSOP−8
Device(s)
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Package
ON Semiconductor Selector Guide − Clock and Data Management Devices
Clock Generation (continued) (Specifications are at 25°C unless otherwise stated) Output
Frequency Division
# of Channels
Outputs per Bank
Voltage
Frequency (Typ) GHz
Propagation Delay (Typ) ps
Cycle−to−Cycle Jitter (Typ/Max) ps
Tr & Tf (Max) ps
MC10EP33
ECL/PECL
Div4
1
1
3.3/5
>4
320
0.2 / 1.0
180
NB100LVEP222
Device(s)
Package SO−8, TSSOP−8
ECL/PECL
1:15 Diff. Div1, Div2
2
15
2.5/3.3
1
875
0.2 / 1.0
160 (typ)
LQFP−52
NBSG53A
RSECL
Div1, Div2
2
1
2.5/3.3
>8
210
0.5 / 1.0
60
FCBGA−16
NB6L239
PECL
1/2/4/8, 2/4/8/16
2
1
2.5, 3.3
3
470
0.2 / 1.0
120
QFN−16
NB6N239S
LVDS
1/2/4/8, 2/4/8/16
2
1
3.3
3
470
0.2 / 1.0
120
QFN−16
NB7N017M
CML
Dual 8−Bit Modulus
1
1
3.3
3.5
500
3.0
65
QFN−52
Skew Management (Specifications are at 25°C unless otherwise stated)
Voltage
Frequency (Typ) GHz
Min Programmable Delay (Typ) ns
Max Programmable Delay (Typ) ns
Step Delay Resolution (Typ) ps
Cycle−to−Cycle Jitter (Max) ps
Tr & Tf (Max) ps
Package
MC100E195
5
>1
2.05
2.6
20
1
2.05
2.6
20
2.5
2.2
12.2
10
0.2 / 1.0
300
LQFP−32
MC100EP1962
3.3/5
>1.8
2.2
12.2
10
0.2 / 1.0
210
LQFP32
MC10E195
5
>1
2.05
2.6
20
1
2.05
2.6
20
2.5
2.2
12.2
10
0.2 / 1.0
300
LQFP−32
MC10EP1962
3.3/5
>1.8
2.2
12.2
10
0.2 / 1.0
210
LQFP32
Device(s)
SPECIAL NOTES/FEATURES: 1 FTUNE input provides t20 pS resolution control. 2 FTUNE input provides 0 to 60 pS programmable resolution control.
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ON Semiconductor Selector Guide − Clock and Data Management Devices
Prescalers (Specifications are at 25°C unless otherwise stated) Frequency Division
Voltage
Supply Current (Icc−Max) mA
Frequency (Max) GHz
Supply Current Unloaded (Typ) mA
Input Voltage Sensitivity Min/Max (mV p−p)
Package
Div8/9 or Div16/17
5
5.3
1.1
4
100 / 1000
SO−8
MC12080
Div10, Div20, Div40, Div80
5
5
1.1
3.7
100 / 1000
SO−8
MC12093
Div2, Div4, Div8
3.3/5
4.5
1.1
3
100 / 1000
SO−8
MC12095
Div2, Div4, Div8
3.3/5
14
2.5
3
200 / 1000
SO−8
Device(s) MC12026A
Clock Synthesizers (Specifications are at 25°C unless otherwise stated)
VCC (Typ) V
Min Output Freq. (MHz)
Max Output Freq. (MHz)
Max Input Freq. XTAL (MHz)
t_jitter (+−ps)
Min Output Rise/Fall (ps)
Temperature Rating
NBC12429
3.3, 5
25
400
20
20
300
0 to 70°C
28−PLCC, 32−LQFP
NBC12430
3.3, 5
50
800
20
20
175
0 to 70°C
28−PLCC, 32−LQFP
NBC12439
3.3, 5
50
800
20
25
300
0 to 70°C
28−PLCC, 32−LQFP
NBC12429A
3.3, 5
25
400
20
20
300
−40 to 85°C
28−PLCC, 32−LQFP
NBC12430A
3.3, 5
50
800
20
20
175
−40 to 85°C
28−PLCC, 32−LQFP
NBC12439A
3.3, 5
50
800
20
25
300
−40 to 85°C
28−PLCC, 32−LQFP
NB4N507A
3.3, 5
50
200
27
10
50
−40 to 85°C
SOIC−16
Device(s)
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Package
ON Semiconductor Selector Guide − Clock and Data Management Devices
Zero Delay Buffers (Specifications are at 25°C unless otherwise stated) Device(s)
Outputs Per Device
VDD Typ (V)
tskew (O−O) Max (ps)
F Max (MHz)
t_Jitter Max (ps)
Package
NB2304AC1D
4
3.3
200
133.3
100
SOIC−8
NB2304AI1D
4
3.3
200
133.3
100
SOIC−8
NB2304AC1HD
4
3.3
200
133.3
100
SOIC−8
NB2304AI1HD
4
3.3
200
133.3
100
SOIC−8
NB2304AC2D
4
3.3
200
133.3
100
SOIC−8
NB2304AI2D
4
3.3
200
133.3
100
SOIC−8
NB2305AC1D
5
3.3
250
133.3
200
SOIC−8
NB2305AI1D
5
3.3
250
133.3
200
SOIC−8
NB2305AC1DT
5
3.3
250
133.3
200
TSSOP−8
NB2305AI1DT
5
3.3
250
133.3
200
TSSOP−8
NB2305AC1HD
5
3.3
250
133.3
200
SOIC−8
NB2305AI1HD
5
3.3
250
133.3
200
SOIC−8
NB2305AC1HDT
5
3.3
250
133.3
200
TSSOP−8
NB2305AI1HDT
5
3.3
250
133.3
200
TSSOP−8
NB2308AC1D
8
3.3
200
133.3
100
SOIC−16
NB2308AI1D
8
3.3
200
133.3
100
SOIC−16
NB2308AC1DT
8
3.3
200
133.3
100
TSSOP−16
NB2308AI1DT
8
3.3
200
133.3
100
TSSOP−16
NB2308AC1HD
8
3.3
200
133.3
100
SOIC−16
NB2308AI1HD
8
3.3
200
133.3
100
SOIC−16
NB2308AC1HDT
8
3.3
200
133.3
100
TSSOP−16
NB2308AI1HDT
8
3.3
200
133.3
100
TSSOP−16
NB2308AC2D
8
3.3
200
133.3
100
SOIC−16
NB2308AI2D
8
3.3
200
133.3
100
SOIC−16
NB2308AC2DT
8
3.3
200
133.3
100
TSSOP−16
NB2308AI2DT
8
3.3
200
133.3
100
TSSOP−16
NB2308AC3D
8
3.3
200
133.3
100
SOIC−16
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ON Semiconductor Selector Guide − Clock and Data Management Devices
Zero Delay Buffers (continued) (Specifications are at 25°C unless otherwise stated) Device(s)
Outputs Per Device
VDD Typ (V)
tskew (O−O) Max (ps)
F Max (MHz)
t_Jitter Max (ps)
Package
NB2308AI3D
8
3.3
200
133.3
100
SOIC−16
NB2308AC3DT
8
3.3
200
133.3
100
TSSOP−16
NB2308AI3DT
8
3.3
200
133.3
100
TSSOP−16
NB2308AC4D
8
3.3
200
133.3
100
SOIC−16
NB2308AI4D
8
3.3
200
133.3
100
SOIC−16
NB2308AC4DT
8
3.3
200
133.3
100
TSSOP−16
NB2308AI4DT
8
3.3
200
133.3
100
TSSOP−16
NB2308AC5HD
8
3.3
200
133.3
100
SOIC−16
NB2308AI5HD
8
3.3
200
133.3
100
SOIC−16
NB2308AC5HDT
8
3.3
200
133.3
100
TSSOP−16
NB2308AI5HDT
8
3.3
200
133.3
100
TSSOP−16
NB2309AC1D
9
3.3
250
133.3
200
SOIC−16
NB2309AI1D
9
3.3
250
133.3
200
SOIC−16
NB2309AC1DT
9
3.3
250
133.3
200
SOIC−16
NB2309AI1DT
9
3.3
250
133.3
200
TSSOP−16
NB2309AC1HD
9
3.3
250
133.3
200
SOIC−16
NB2309AI1HD
9
3.3
250
133.3
200
SOIC−16
NB2309AC1HDT
9
3.3
250
133.3
200
TSSOP−16
NB2309AI1HDT
9
3.3
250
133.3
200
TSSOP−16
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ON Semiconductor Selector Guide − Clock and Data Management Devices
EMI Suppression Clocks (Specifications are at 25°C unless otherwise stated)133.3 Device(s)
VDD Typ (V)
Modulation
F Max (MHz)
Duty Cycle
tR & tF Max (ps)
Package
NB2579A
3.3
"1%
40
50
1100
TSSOP−6
NB2669A
3.3
"1%
12
50
1100
TSSOP−6
NB2760A
3.3
"0.75%
12
50
1100
TSSOP−6
NB2762A
3.3
−1.25%
12
50
1100
TSSOP−6
NB2769A
3.3
"1%
12
50
1100
TSSOP−6
NB2779A
3.3
"1%
30
50
1100
TSSOP−6
NB2780A
3.3
"0.75%
50
50
1100
TSSOP−6
NB2869A
3.3
"1%
12
50
1100
TSSOP−6
NB2870A
3.3
"0.75%
30
50
1100
TSSOP−6
NB2872A
3.3
−1.25%
30
50
1100
TSSOP−6
NB2879A
3.3
"1%
30
50
1100
TSSOP−6
NB2969A
3.3
"1%
12
50
1100
TSSOP−6
VCO (PLL) (Specifications are at 25°C unless otherwise stated) Device(s)
Frequency (Max) GHz
Voltage
Duty Cycle (Typ) %
SNR from Carrier (dB)
Package
1.1
5
50
40
SOIC−8, TSSOP−8, SOIC EIAJ−14
MC100EL1648
Phase/Frequency Detectors (Specifications are at 25°C unless otherwise stated) Voltage
Transfer Gain mV/Degree
Vref & FB Inputs (S.E./Diff.)
Frequency (Typ) GHz
Propagation Delay (Typ) ps
Cycle−to−Cycle Jitter (Typ) ps
Tr & Tf (Max) ps
Package
MC100LVEL40
3.3/5
2
Diff
0.25
1350
0.2 / 1.0
475
SO−20
MC100EP40
3.3/5
0.93
Diff
>2
550
0.2 / 1.0
150
TSSOP−20
Device(s)
MC100EP140
3.3
1.2073
S.E.
>2
475
0.2 / 1.0
200
SO−8
MCH12140
3.3, 5
N/A
S.E.
800
0.44
N/A
350
SOIC 8
MCK12140
3.3, 5
N/A
S.E.
800
0.44
N/A
350
SOIC 8
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ON Semiconductor Selector Guide − Clock and Data Management Devices
Flip−Flops (Specifications are at 25°C unless otherwise stated) Hold Time (Min) ps
Set/ Reset Recovery (Min) ps
Jitter (Typ) ps RMS
Tr & Tf (Max) ps
Package
Description
Voltage
Output(s) (S.E. or Diff.)
MC100E131
3.3/5 V ECL Quad D Flip−Flop with Set, Reset and Differential Clock
5
Diff.
1.1
500
150
175
290
1
480
LQFP−32
MC100E431
5 V ECL Triple Differential Data and Clock D Flip−Flop with Edge Triggered Set and Reset
5
Diff.
1.1
600
200
200
400
1
500
300
300
800
800
PLCC−28
MC100E156
5 V ECL 3−Bit 4:1 Mux−Latch
5
>1
600
400
300
800
700
PLCC−28
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ON Semiconductor Selector Guide − Clock and Data Management Devices
Shift Registers (Specifications are at 25°C unless otherwise stated)
Device(s)
Clock Source
Freq. (Typ) GHz
Prop. Delay (Typ) ps
Setup Time (Min) ps
Hold Time (Min) ps
Set/ Reset Recovery (Min) ps
Jitter (Typ) ps RMS
Tr & Tf (Max) ps
Package
Description
Voltage
# of Bits
MC100E141
5 V ECL 8−Bit Shift Register
5
8
S.E.
0.9
750
175
200
900
2
300
0.2
575
PLCC−28
MC10E416
5 V ECL Quint Differential Line Receiver
ECL/PECL
ECL/PECL
5
>2
350
0.2
350
PLCC−28
MC10EL16
5 V ECL Differential Receiver
ECL/PECL
ECL/PECL
5
>2
250
0.2
350
SO−8, TSSOP−8
MC10EP116
3.3/5 V ECL Hex Differential Line Receiver/Driver
ECL/PECL
ECL/PECL
3.3/5
>3
260
0.2
240
LQFP−32
MC10EP16
3.3/5 V ECL Differential Receiver/Driver
ECL/PECL
ECL/PECL
3.3/5
>4
220
0.2
180
SO−8, TSSOP−8
3.3/5 V ECL Differential Receiver/Driver with Internal Input Termination
ECL/PECL
ECL/PECL
3.3/5
>3
220
0.2
180
SO−8, TSSOP−8
MC10EP16VA
3.3/5 V ECL Differential Receiver/Driver with High Gain
ECL/PECL
ECL/PECL
3.3/5
>3
270
0.2
180
SO−8, TSSOP−8
MC10EP16VB
3.3/5 V ECL Differential Receiver/Driver with High and Low Gain
ECL/PECL
ECL/PECL
3.3/5
>3
300
0.2
240
SO−8, TSSOP−8
MC10EP16VC
3.3/5 V ECL Differential Receiver/Driver with High Gain and Enable Output
ECL/PECL
ECL/PECL
3.3/5
>3
380
0.2
240
SO−8, TSSOP−8
MC10EP16VT
3.3/5 V ECL Differential Receiver/Driver with Variable Output Swing and Internal Input Termination
ECL/PECL
ECL/PECL
3.3/5
>4
300
0.2
180
SO−8, TSSOP−8
Device(s)
MC10EP16T
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ON Semiconductor Selector Guide − Clock and Data Management Devices
Drivers/Receivers (continued) (Specifications are at 25°C unless otherwise stated) Prop. Delay (Typ) ps
Jitter (Typ) ps RMS
Tr/Tf (Max) ps
Description
Input I/O
Output I/O
Voltage
Freq. (Typ) GHz
3.3 V ECL Quad Differential Receiver
ECL/PECL
ECL/PECL
3.3/5
>3
220
0.2
230
SO−20, TSSOP−20
MC10LVEP16
2.5/3.3 V ECL Differential Receiver/Driver
ECL/PECL
ECL/PECL
2.5/3.3
>4
240
0.2
180
SO−8, TSSOP−8
NB100LVEP17
2.5 V/3.3 V/5 V ECL Quad Differential Driver/Receiver
ECL/PECL
ECL/PECL
2.5/3.3/5
>2.5
250
0.5
240
TSSOP−20, QFN−24
NBSG16
2.5/3.3 V SiGe Differential Receiver/Driver with RSPECL Output
ECL/PECL, HSTL, GTL, TTL, CMOS, CML or LVDS
RSECL
2.5/3.3
>12
120
0.3
65
FCBGA−16, QFN−16
NBSG16VS
2.5/3.3 V SiGe Differential Receiver/Driver with Variable Output Swing
ECL/PECL, TTL, CMOS, LVDS or LVDS
ECL/PECL
2.5/3.3
>12
125
0.8
55
FCBGA−16, QFN−16
2.5/3.3 V Multi−level Input to Differential LVECL Clock or Data Translator/Receiver/Driver Buffer
LVDS, LVPECL, LVNECL, CML, LVCMOS or LVTTL
ECL/PECL
2.5/3.3
>6
130
0.2
120
SO−8, TSSOP−8
NBSG16M
2.5/3.3 V Multi−level Input to CML Clock/Data Receiver/Driver/Translator Buffer
ECL/PECL/LVTTL/ LVCMOS/CML/LV DS
CML
2.5/3.3
>10
120
0.2
53
QFN−16
NB4N527S
3.3 V 2.5 Gb/s Dual Any Level to LVDS Receiver/Driver/Buffer/ Translator with Input Termination
LVNECL, LVPECL, LVTTL, LVCMOS, CML, LVDS, HSTL
LVDS
3.3
>1.25
275
0.5
140
QFN−16
NB4L16M
2.5/3.3 V 5 Gb/s Multi Level Clock/Data Input to CML Driver/ Receiver/Buffer/Translator with Internal Termination
LVPECL, LVDS, CML, LVCMOS, LVTTL
CML
2.5/3.3
>3.5
220
0.2
90
QFN−16
NB7L216
2.5/3.3 V 12 Gb/s Multi Level Clock/Data Input to RSECL High Gain Receiver/Buffer/Translator with Internal Termination
LVNECL, LVPECL, HSTL, LVTTL, LVCMOS, CML or LVDS
RSECL
2.5/3.3
>8.5
120
0.1
45
QFN−16
Device(s) MC10EP17
NB6L16
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Package
ON Semiconductor Selector Guide − Clock and Data Management Devices
Drivers/Buffers (Specifications are at 25°C unless otherwise stated)
Description
Voltage
Outputs
Propagation Delay (Typ) ps
MC10EL12
5 V ECL Low Impedance 1:2 Driver
5
OR/NOR ECL
290
N/A
550
SO−8, TSSOP−8
MC100EL12
5 V ECL Low Impedance 1:2 Driver
5
OR/NOR ECL
290
N/A
550
SO−8, TSSOP−8
3.3 V ECL Low Impedance 1:2 Driver
3.3
OR/NOR ECL
445
N/A
550
SO−8, TSSOP−8
MC10E112
5 V ECL Quad Driver
5
OR/NOR ECL
400
40
700
PLCC−28
MC10E212
5 V ECL 3−Bit Scannable Registered Address Driver
5
OR/NOR ECL
800
50
650
PLCC−28
MC10E122
5 V ECL 9−Bit Buffer
5
S.E.
350
75
800
PLCC−28
MC100E112
5 V ECL Quad Driver
5
OR/NOR ECL
400
40
700
PLCC−28
MC100E212
5 V ECL 3−Bit Scannable Registered Address Driver
5
OR/NOR ECL
800
50
650
PLCC−28
MC100E122
5 V ECL 9−Bit Buffer
5
S.E.
350
75
800
PLCC−28
Device(s)
MC100LVEL12
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Within Gate Skew (Max) ps
Tr/Tf (Max) ps
Package
Standard Logic Devices
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ON Semiconductor Selector Guide − Logic Devices
Standard Logic Devices In Brief . . . This selector guide is a quick reference to ON Semiconductor’s offering of exciting new Analog Switches and MiniGatet products as well as the traditional standard logic integrated circuits. ON Semiconductor continues to increase the breadth of its portfolio offering in the MiniGate arena, and continues to offer the traditional industry standard IC Logic families that have become the foundation for a multitude of legacy electronic systems. The company’s standard logic portfolio provides designers with a wide selection of voltages and speed/drive combinations to meet their application needs. The MiniGate family of devices takes advantage of ON Semiconductor’s world class discrete micropackaging manufacturing technology to enable best−in−class products. The technologies offered in the MiniGate family are direct “relatives” of the standard IC Logic products, designed and manufactured in the same CMOS based technology. These include Analog Switch, LCX, VHC and HC technologies, with the majority of the popular functions available in these different families in industry standard 5, 6 and 8 pin packages. The traditional industry standard Logic IC offerings consist of families in the high voltage standard logic arena (5.0 V and greater). In the low voltage standard logic arena, ON Semiconductor offers the following families: VCX: This is the fastest, lowest voltage logic family offered by ON Semiconductor. Ten devices in all are offered, with five of the most popular functions, as well as five enhanced devices with a bus hold option. It is specified at 0.9 V to 3.6 V, is offered in the industry standard 48 pin TSSOP package and is specifically well suited for networking/ communication equipment applications, demanding high speed and low power. LCX: LCX is fast becoming the industry “workhorse” product family in 3.0 V applications. This family features 5.0 V tolerant inputs and outputs and is especially suited for mixed−voltage, high−end, advanced workstation designs, as well as for low−power portable applications. LVX: LVX is specified from 2.0 V to 3.6 V and is similar tin performance to VHC, but with lower output drive. It too has overvoltage tolerant (OVT) inputs to 7.0 V, allowing the interface of 5.0 V systems to 3.0 V systems. This family is available in industry standard JEDEC SOIC, EIAJ SOIC, and the popular TSSOP packages. It is specified at –55 to +125_C.
Page
Family Tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . Selection by Family Analog Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . MiniGates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VHC One−Gates . . . . . . . . . . . . . . . . . . . . . . . . HC One−Gates . . . . . . . . . . . . . . . . . . . . . . . . . LCX One−Gates . . . . . . . . . . . . . . . . . . . . . . . . LCX Two− and Three−Gates . . . . . . . . . . . . . . VCX One Gates . . . . . . . . . . . . . . . . . . . . . . . . . Low Voltage Standard Logic . . . . . . . . . . . . . . . . . VCX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VHC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LCX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LVX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V and Greater Standard Logic . . . . . . . . . . . . High Speed CMOS: HC . . . . . . . . . . . . . . . . . . AC/ACT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Metal Gate CMOS . . . . . . . . . . . . . . . . . . . . . . . Logic Special Functions . . . . . . . . . . . . . . . . . . . .
147 148 151 152 152 152 153 153 154 155 155 155 156 157 159 159 161 164 166
VHC: This “5.0 V to 3.0 V transitional family” is specified at 2.0 V to 5.5 V. When operating at supply voltages below 5.0 V, this family features 5.0 V tolerant inputs to support 3.0 V to 5.0 V mixed voltage system designs. Low power, low switching noise and fast switching speeds make this family perfect for low power, low cost applications. The VHCT functions offer TTL level compatibility with CMOS low power performance. VHCT accepts TTL level inputs and delivers full swing (4.5 V to 5.5 V) outputs. The supply voltage range for VHCT is VCC = 4.5 V − 5.5 V. The temperature range for this family is also –55 to +125_C and is also available in the same packages as LVX family. There are three families offered in the more mature 5.0 V and greater operating voltage arena. FACT (AC/ACT), High Speed (HC/HCT) and Metal Gate (14000 series), remain as the legacy logic families. These families, although past the maturity stage in the industry product life cycle, continue to find new applications and will remain industry standards for many more years.
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ON Semiconductor Selector Guide − Logic Devices
STANDARD LOGIC PRODUCTS FAMILY TREE
Traditional
Standard CMOS (> 5 V)
Transitional
Analog Switches NLASxxx
LV ( 400 V
Standard Transistors 100−400 V
Standard Transistors < 100 V
Darlingtons
Bipolar Power Transistors
Standard Recovery
Fast Recovery
Ultrasoft
Ultrafast
Schottky
Rectifiers
Discrete Products Family Tree
Triggers
SIDAC
TRIACs
SCRs
Thyristors
Integrated FETs
Ignition IGBT
High Voltage > 200 V
Medium Voltage 40−200 V
Low Voltage ≤ 40 V
MOSFETs
ON Semiconductor Selector Guide − Discrete Devices
ON Semiconductor Selector Guide − Discrete Devices
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ON Semiconductor Selector Guide − Discrete Devices
Small−Signal Bipolar Transistors, JFETs, and Diodes
In Brief . . . Page
Bipolar Transistors General−Purpose Transistors . . . . . . . . . . . . . . . . General−Purpose Multiple Transistors . . . . . . . . Low Noise and Good hFE Linearity . . . . . . . . . . . Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . High Current Transistors . . . . . . . . . . . . . . . . . . . . High Voltage Transistors . . . . . . . . . . . . . . . . . . . . RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . Switching Transistors . . . . . . . . . . . . . . . . . . . . . . . Multiple Switching Transistors . . . . . . . . . . . . . . . Digital Transistors (Bias Resistor Transistors) . . Dual Digital Transistors (Bias Resistor Transistors) . . . . . . . . . . . . . . . Combinational Digital Transistors (Bias Resistor Transistors) . . . . . . . . . . . . . . . Low Saturation Voltage Transistors . . . . . . . . . . . Junctional Field−Effect Transistors − JFETs Low−Frequency/Low−Noise . . . . . . . . . . . . . . . . . High−Frequency Amplifiers . . . . . . . . . . . . . . . . . . Switches and Choppers . . . . . . . . . . . . . . . . . . . . Tuning and Switching Diodes Abrupt Junction Tuning Diodes . . . . . . . . . . . . . . Hyper−Abrupt Junction Tuning Diodes . . . . . . . . Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . Pin Switching Diodes . . . . . . . . . . . . . . . . . . . . . . . General Purpose Signal & Switching Diodes . . . Switching and Schottky Diode Arrays . . . . . . . . . . .
This section highlights semiconductors that are the most popular and have a history of high usage for most applications. It covers a wide range of Small−Signal semi− conductors. A large selection of bipolar transistors, JFETs and diodes are available for surface mount and insertion assembly technology. Small−Signal Package Cross−Reference Table EIAJ
IEC
JEDEC
Other
SOT−23
SST3, Micro3
SC−59
SOT−346
SMT3. MPAK, Mini3, S−Mini
SC−70
SOT−323
SC−75, SC−90
SOT−416
SC−89
SOT−490
USM, S−Mini3 SOT−523, SS−Mini3, SSM SOT−523, SS−Mini3
SOT−457
SC−74A
EMT3, SMPAK
EMT3, FL/ESM VMT3, 3SS−Mini3, VSM, TSFP−3
SOT−723 SC−74
UMT3, CMPAK
TSOP6
SMT6, SC−59−6, SOT−23−6
TSOP5
SMT5, SC−59−5, SOT−23−5
SC−88
SOT−363
UMT6, SC−70−6
SC−88A
SOT−353
UMT5, SC−70−5
SOT−563
EMT6, SOT−666
SOT−553
EMT5, SOT−665
SC−77
SOD−123
SMD2
SC−76
SOD−323
UMD2, URP, USC
SC−79
SOD−523
EMD2, UFP, SS−Mini2, ESC
SC−62
SOT−89
MPT3, UPAK
SC−73
SOT−223
SC−43
SOT−54
TO−92
SPT
SO−16 BOLD denotes an ON Semiconductor package name.
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ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors General−Purpose Transistors NPN
PNP
V(BR)CEO
IC mA Max
Min
Max
MHz Min 100 100 100 150 100 − 200/150
hFE
fT
BC449 BC449A BC447 MPS8099 MPSA06 −
− − − MPS8599 MPSA56 MPS6729
100 100 80 80 80 80
300 300 500 500 500 500
50 120 50 100 100 50
460 220 460 300 − 250
BC489
BC490
80
1000
60
400
BC639 BC489A BC489B BC639−16 BC546B BC487 BC487B MPSA05 − MPS651 BC637 − BC182 BC182A BC182B BC237 BC237B BC237C BC337 BC337−16 BC337−25 BC337−40 BC550C BC547A BC547B BC547C MPSA18
BC640 BC490A
80 80 80 80 65 60 60 60 60 60 60 50 50 50 50 45 45 45 45 45 45 45 45 45 45 45 45
500 1000 1000 1000 100 500 500 500 600 2000 500 50 100 100 100 100 100 100 800 800 800 800 100 100 100 100 200
40 100 160 100 180 60 160 100 100 75 40 250 120 120 200 120 200 380 100 100 160 250 380 120 180 380 500
160 250 400 250 450 400 400 − 300 − 160 800 500 260 500 800 460 800 630 250 400 630 800 220 450 800 −
− BC640−16 BC556B − BC488B MPSA55 MPS2907A MPS751 BC638 2N5087 − − BC212B − BC307B BC307C BC327 BC327−16 BC327−25 BC327−40 BC560C BC557A BC557B BC557C −
BC635
−
45
500
40
250
MPSA20 MPS2222A 2N4401 MPS6602 2N3904
− −
40 40 40 40 40
100 600 600 1000 200
40 100 100 50 100
400 300 300 − 300
2N4403 MPS6652 2N3906
Devices listed in bold italic are ON Semiconductor preferred devices.
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(Typ)
60 100 100 60 150 − − 100 200 75 − 40 200 (Typ) 200 200 150 150 150 210 (Typ) 260 (Typ) 260 (Typ) 260 (Typ) 250 (Typ) 150 150 150 100 200/150 (Typ)
125 300 200 100 250
NF
dB Max
Package
− − − − − − 0.3/0.5 0.5 0.5 0.5 0.5 10 − − − − 0.5 0.5 2.0 10 10 10 10 10 10 − − − − 2.5 10 10 10 1.5 − − − − − 5.0
TO−226AA, TO−92 Case 29−11
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors General−Purpose Transistors NPN
PNP
BC548B BC548C
BC558B BC558C
− MPS2222 2N5088 2N5089 BC239C BC338−25 MPS4124 − MPS5172 MPS6521 BC368 − MPSW06 MPS6717 MPSW05 MPSW01A MPS6727 MPSW01 MPS6726
− − − − − − − MPS4126 − MPS6523 BC369 MPS6729 MPSW56 − MPSW55 MPSW51A − MPSW51 −
V(BR)CEO
30 30 30 30 30 25 25 25 25 25 25 25 20 80 80 80 60 40 40 30 30
IC mA Max
hFE Min
100 100 100 600 50 50 100 800 200 200 100 100 1000 500 500 500 500 1000 1000 1000 1000
200 420 80 100 350 450 380 160 120 120 100 300 60 50 80 50 60 50 50 50 50
fT Max
dB Max
450 800 − 300 − − 800 400 360 360 500 600 − 250 − 250 − − 250 − 250
300 (Typ) 300 200 250 50 50 150 150 170 170 − − 65 − 50 100 50 50 − 50 −
10 10 10 − 3.0 2.0 4.0 − 5.0 4.0 − 3.0 0.5 − − − 250 − − − −
Devices listed in bold italic are ON Semiconductor preferred devices.
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NF
MHz Min
Package
TO−226AA, TO−92 Case 29−11
TO−226AE (1−WATT) TO−92 Case 29−10
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors General−Purpose Transistors NPN MMBT5550LT1 − BSS64LT1 MMBTA06LT1 MMBT8099LT1 BC846ALT1 BC846BLT1 − − − MMBT2484LT1 MMBTA05LT1 − MMBT6428LT1 − MMBT6429LT1 BC817−16LT1 BC817−25LT1 BC817−40LT1 − − − BC847ALT1 BC847BLT1 BC847CLT1 BC850BLT1 BC850CLT1 − − − − − BCW72LT1 − BCX19LT1 MMBT2222ALT1 MMBT3904LT1 − MMBT4401LT1 − MMBT3416LT3 MMBTA20LT1 − − BCW32LT1 BCW65ALT1 BCW65CLT1 BC848ALT1 BC848BLT1 BC848CLT1
PNP − BSS63LT1 − MMBTA56LT1 − − − BC856ALT1 BC856BLT1 MMBT2907ALT1 − − MMBTA55LT1 − MMBT5087LT1 − − − − BC807−16LT1 BC807−25LT1 BC807−40LT1 − − − − − BC857ALT1 BC857BLT1 BC857CLT1 BCW68GLT1 BCW70LT1 − BCX17LT1 − − − MMBT3906LT1 − MMBT4403LT1 − − MMBTA70LT1 BCW30LT1 − − − − − −
V(BR)CEO
140 100 80 80 80 65 65 65 65 60 60 60 60 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 40 40 40 32 32 32 32 30 30 30
IC mA Max
hFE Min
600 100 100 500 500 100 100 100 100 600 50 500 500 200 50 200 500 500 500 500 500 500 100 100 100 100 100 100 100 100 800 100 100 500 500 600 200 200 600 600 100 100 100 100 100 800 100 100 100 100
60 30 20 100 100 110 200 125 220 100 250 100 100 250 250 500 100 160 250 100 160 250 110 200 420 200 420 125 220 420 120 215 200 100 100 100 100 100 100 100 75 40 40 215 200 100 250 110 200 420
fT Max
dB Max
250 − − − 300 220 450 250 475 300 − − − − − − 250 400 600 250 400 600 220 450 800 450 800 250 475 800 400 500 450 600 600 300 300 300 300 300 225 400 400 500 450 250 630 220 450 800
− 50 60 100 150 100 100 100 100 200 − 100 50 100 40 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 − 300 − − 300 200 250 250 200 − 125 125 − − 100 100 100 100 100
− −0.25 0.15 − − 10 10 10 10 − 3.0 − − 3.0 (Typ) 2.0 3.0 (Typ) − − − − − − 10 10 10 4.0 4.0 10 10 10 10 10 10 − − 4.0 5.0 4.0 − − − − − 10 10 10 10 10 10 10
Devices listed in bold italic are ON Semiconductor preferred devices.
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NF
MHz Min
Package
TO−236AB, SOT−23 Case 318−08
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors General−Purpose Transistors NPN BC849BLT1 BC849CLT1 − − − − − MMBT5088LT1 MMBT2222LT1 MMBT5089LT1 MMBT4124LT1 − − BCW33LT1 MSD601−RT1 MSD601−ST1 MSD602−RT1 MSC2712GT1 2SC2712GT1 − MSC2712YT1 − − − MSD1328−RT1 MSD1328−ST1 MMBTA06WT1 BC846AWT1 BC846BWT1 − − MSD1819A−RT1 BC847AWT1 BC847BWT1 BC847CWT1 − − − MMBT4401WT1 − MMBT2222AWT1 MMBT3904WT1 − BC848AWT1 BC848BWT1 BC848CWT1 − − MSC3930−BT1
PNP − − BC858ALT1 BC858BLT1 BC858CLT1 BC859BLT1 BC859CLT1 − − − − BCX18LT1 MMBT4126LT1 − − − − − − MSA1162GT1 − MSA1162YT1 MSB710−RT1 MSB709−RT1 − − MMBTA56WT1 − − BC856BWT1 MMBT2907AWT1 − − − − BC857BWT1 BC857CWT1 MSB1218A−RT1 − MMBT4403WT1 − − MMBT3906WT1 − − − BC858AWT1 BC858BWT1 −
V(BR)CEO
30 30 30 30 30 30 30 30 30 25 25 25 25 20 50 50 50 50 50 50 50 50 50 45 20 20 80 65 65 65 60 50 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 20
IC mA Max
Min
100 100 100 100 100 100 100 50 600 50 200 500 200 100 100 100 500 100 200 100 100 100 500 100 500 500 500 100 100 100 600 100 100 100 100 100 100 100 600 600 600 200 200 100 100 100 100 100 30
200 420 125 220 420 220 420 300 100 400 120 100 120 420 210 290 120 200 200 200 120 120 120 210 200 300 100 110 200 220 100 210 110 200 420 220 420 210 100 100 100 100 100 110 200 420 110 200 70
hFE
fT Max
dB Max
450 800 250 475 800 475 800 900 300 1200 360 600 300 800 340 460 240 400 400 400 240 240 240 340 350 500 − 220 450 475 − 340 220 450 800 475 800 340 300 300 300 300 300 220 450 800 220 450 140
100 100 100 100 100 100 100 5 250 50 300 − 250 − − − − − 80 − − − − − − − 100 100 100 100 200 − 100 100 100 100 100 − 250 200 300 300 250 100 100 100 100 100 150
4.0 4.0 10 10 10 4.0 4.0 3.0 4.0 2.0 5.0 − 4.0 10 − − − − 10 − − − − − − − − 10 10 10 − − 10 10 4.0 10 10 − − − 4.0 5.0 4.0 10 10 4.0 10 10 −
Devices listed in bold italic are ON Semiconductor preferred devices.
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NF
MHz Min
Package
TO−236AB, SOT−23 Case 318−08
SC−59 Case 318D−04
SC−70, SOT−323 Case 419−04
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors General−Purpose Transistors NPN
PNP
2SC4617 − BC847BTT1 BC847CTT1 − − MMBT3904TT1 − MMBT2222ATT1 − − − − − − BC846BM3T5G 2SC5658BM3T5G BC847BM3T5G BC847CM3T5G MMBT2222AM3T5G NST3904M3T5G BCP56T1 BCP56−10T1 BCP56−16T1 − PZT651T1 PZT2222AT1 BCP68T1
− 2SA1774 − − BC857BTT1 BC857CTT1 − MMBT3906TT1 − 2SA2029BM3T5G BC857BM3T5G BC857CM3T5G BC856BM3T5G MMBT2907AM3T5G NST3906M3T5G − − − − − − BCP53T1 BCP53−10T1 BCP53−16T1 PZT2907AT1 PZT751T1 − BCP69T1
V(BR)CEO
50 50 45 45 45 45 40 40 40 50 45 45 45 60 40 65 50 45 45 40 40 80 80 80 60 60 40 25
IC mA Max
hFE Min
100 100 100 100 100 100 200 200 600 100 100 100 100 600 200 100 100 100 100 600 200 1000 1000 1000 600 2000 600 1000
120 120 200 420 220 420 100 100 100 120 220 420 220 100 100 200 120 200 420 100 100 40 63 100 100 75 100 85
fT Max
dB Max
560 560 450 800 475 800 300 300 300 560 475 800 475 − 300 450 560 450 800 300 300 250 160 250 300 − 300 375
180 (Typ) 140 (Typ) 100 100 100 100 300 250 300 140 (Typ) 100 100 100 200 250 100 180 (Typ) 100 100 300 300 50 (Typ) 50 (Typ) 50 (Typ) 200 75 300 60 (Typ)
− − 10 4.0 10 10 5.0 4.0 4.0 − 10 10 10 − 4.0 10 − 10 10 4.0 5.0 − − − − − − −
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 177
NF
MHz Min
Package
SOT−416, SC−75, SC−90 Case 463−01
SOT−723 Case 631AA−01
SOT−223 Case 318E−04
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors General−Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 MBT6429DW1T1 UMZ1NT1 BC848CDW1T1 BC858CDW1T1 BC848CPDW1T1 BC847CDXV6T1 EMT1DXV6T1 EMT2DXV6T1 EMX1DXV6T1 EMX2DXV6T1 EMZ1DXV6T1 BC847BPDXV6T1 NST3904DXV6T1 NST3906DXV6T1 NST3946DXV6T1 BC848CDXV6T1 BC858CDXV6T1 MMPQ2222A MMPQ3467 MMPQ3904 MMPQ3906 MMPQ6700 MMPQ2369
Type Dual NPN Dual PNP Dual Complimentary Dual NPN Dual NPN Dual PNP Dual PNP Dual Complimentary Dual Complimentary Dual NPN Dual PNP Dual Complimentary Dual NPN
Dual NPN Dual PNP Dual Complimentary NPN
Complimentary NPN PNP Complimentary NPN PNP Quad NPN Quad PNP Quad NPN Quad PNP Quad Complimentary Quad NPN
V(BR)CEO
65 65 65 45 45 45 45 45 45 40 40 40 40 45 50 30 30 30 45 60 60 50 50 60 45 40 40 40 30 30 40 40 40 40 40 15
IC mA Max
Min
100 100 100 100 100 100 100 100 100 200 200 200 600 200 200 100 100 100 100 100 100 100 100 100 100 200 200 200 100 100 500 1000 200 200 200 500
200 220 200 200 420 220 420 200 420 100 100 100 100 500 200 420 420 420 420 120 120 120 120 120 200 100 100 100 420 420 100 20 75 75 70 40
hFE
fT Max
dB Max
450 475 475 290 520 290 520 290 520 300 300 300 300 1250 400 250 520 520 520 560 560 560 560 560 290 300 300 300 250 520 300 − − − − −
100 100 100 100 100 100 100 100 100 300 250 250 300 100 114 (Typ) 100 100 100 100 140 (Typ) 140 (Typ) 180 (Typ) 180 (Typ) 140 (Typ) 100 300 250 250 100 100 200 190 (Typ) 250 200 200 450
10 10 10 10 4.0 10 10 10 4.0/10 5.0 4.0 5.0/4.0 4.0 − − 4.0 10 4.0/10 − − − − − − − − − − − − − − − − − −
Devices listed in bold italic are ON Semiconductor preferred devices. 1. Devices in bold, samples starting Oct. 2002, production starting Dec. 2002. 2. Remainder of devices, 4 to 8 weeks after receipt of request based on note 1 timetable.
http://onsemi.com 178
NF
MHz Min
Package
SC−88, SOT−363 Case 419B−02
SOT−563 Case 463A−01
SO−16 Case 751B−05
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors Low Noise and Good hFE Linearity NPN − BC550C
PNP
V(BR)CEO
IC mA Max
Min
Max
hFE
fT
NF
MHz Min
dB Max
2N5087
50
50
250
800
40
2.0
BC560C
45
100
380
800
250 (Typ)
2.5
MPSA18
−
45
200
500
−
100
1.5
2N5088
−
30
50
350
−
50
3.0
2N5089
−
25
50
450
−
50
2.0
25 60 50 50 45 30 25
100 50 200 50 200 50 50
300 250 250 250 500 300 400
600 − − − − 900 −
− − 100 40 100 5 50
3.0 3.0 3.0 (Typ) 2.0 3.0 (Typ) 3.0 2.0
MPS6521 MMBT2484LT1 MMBT6428LT1 − MMBT6429LT1 MMBT5088LT1 MMBT5089LT1
MPS6523 − − MMBT5087LT1 − − −
Package
TO−226AA, TO−92 Case 29−11 (Note 1)
TO−236AB, SOT−23 Case 318−08
Devices listed in bold italic are ON Semiconductor preferred devices. 1. NF: Noise Figure at RS = 2.0 kΩ, IC = 200 μA, VCE = 5.0 Volts. f = 30 Hz to 15 kHz.
Darlington Transistors NPN
PNP
V(BR)CEO
IC mA Max
Min
hFE
fT
NF
Max
MHz Min
dB Max
25K 4000 25K 4000 10K 10K 10K 10K 10K 10K 10K 10K 20K 30K 20K 10K 30K 20000
150K 40000 150K 40000 − − − 160K 160K − 50K − 200K 300K − − − 200000
100 − 100 − 125 125 125 100 100 − 150 − − 125 125 125 200 (Typ) −
1.5 − 1.5 − 1.5 1.5 1.5 1.1 1.1 1.5 1.1 1.5 1.5 1.5 1.5 1.5 1.0 10
MPSW45A MPS6725 MPSW45 MPS6724 − MPSW13 MPSA29 BC372 BC373 MPSA27 BC618 − 2N6427 2N6426 MPSA14 MPSA13 BC517 MMBT6427LT1
− − − − MPSW63 − − − − MPSA77 − MPSA75 − − MPSA64 MPSA63 − −
50 50 40 40 30 30 100 100 80 60 55 40 40 40 30 30 30 40
1000 1000 1000 1000 500 1000 500 1000 1000 500 1000 500 500 500 500 500 1000 500
MMBTA14LT1
MMBTA64LT1
30
300
20K
−
125
−
30
300
10000
−
125
−
30
500
10000
−
125
−
80
1000
2000
−
−
−
MMBTA13LT1 −
BSP52T1
− MMBTA63LT1
−
Package
TO−226AE (1−WATT) TO−92 Case 29−10
TO−226AA, TO−92 Case 29−11
TO−236AB, SOT−23 Case 318−08
SOT−223 Case 318E−04
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 179
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors High Current Transistors (w 500 mA) NPN
PNP
V(BR)CEO
IC mA Max
Min
Max
hFE
fT
BC489
BC490
80
1000
60
400
BC639 BC489A BC489B BC639−16 BC447 MPS8099 MPSA06 − MPS651 BC637 BC487 BC487B MPSA05 −
BC640 BC490A
80 80 80 80 80 80 80 80 60 60 60 60 60 60
500 1000 1000 1000 500 500 500 500 2000 500 500 500 500 600
40 100 160 100 50 100 100 50 75 40 60 160 100 100
160 250 400 250 460 300 − 250 − 160 400 400 − 300
45
500
40
250
45 45 45 45 40 40 40 30 25 20 80 80 80 60 40 40 30 30
800 800 800 800 600 600 1000 600 800 1000 500 500 500 500 1000 1000 1000 1000
100 100 160 250 100 100 50 100 160 60 50 80 50 60 50 50 50 50
630 250 400 630 300 300 − 300 400 − 250 − 250 − − 250 − 250
BC635 BC337 BC337−16 BC337−25 BC337−40 MPS2222A 2N4401 MPS6602 MPS2222 BC338−25 BC368 − MPSW06 MPS6717 MPSW05 MPSW01A MPS6727 MPSW01 MPS6726
− BC640−16 − MPS8599 MPSA56 MPS6729 MPS751 BC638 − BC488B MPSA55 MPS2907A − BC327 BC327−16 BC327−25 BC327−40 − 2N4403 MPS6652 − − BC369 MPS6729 MPSW56 − MPSW55 MPSW51A − MPSW51 −
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 180
MHz Min 200/150 (Typ)
60 100 100 60 100 150 100 − 75 − − − 100 200 200/150 (Typ)
210 (Typ) 260 (Typ) 260 (Typ) 260 (Typ) 300 200 100 250 150 65 − 50 100 50 50 − 50 −
NF
dB Max
Package
0.3/0.5 0.5 0.5 0.5 0.5 − − − − 0.5 0.5 − − − −
TO−226AA, TO−92 Case 29−11
− − − − − − − − − − 0.5 − − − 250 − − − −
TO−226AE (1−WATT) TO−92 Case 29−10
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors High Current Transistors (w 500 mA) NPN MMBT5550LT1 MMBTA06LT1 MMBT8099LT1 − MMBTA05LT1 − − BCW66GLT1 − BCX19LT1 MMBT2222ALT1 MMBT4401LT1 − BCW65ALT1 MMBT2222LT1 − BCP56T1 BCP56−10T1 BCP56−16T1 − PZT651T1 PZT2222AT1 BCP68T1 MMBT2222ATT1
PNP
V(BR)CEO
IC mA Max
hFE Min
fT
NF
Max
MHz Min
dB Max
− MMBTA56LT1 − MMBT2907ALT1 − MMBTA55LT1 BCW68GLT1 − BCX17LT1 − − − MMBT4403LT1 − − BCX18LT1 BCP53T1 BCP53−10T1 BCP53−16T1 PZT2907AT1 PZT751T1 − BCP69T1 −
140 80 80 60 60 60 45 45 45 45 40 40 40 32 30 25 80 80 80 60 60 40 25 40
600 500 500 600 500 500 800 800 500 500 600 600 600 800 600 500 1000 1000 1000 600 2000 600 1000 600
60 100 100 100 100 100 120 160 100 100 100 100 100 100 100 100 40 63 100 100 75 100 85 100
250 − 300 300 − − 400 400 600 600 300 300 300 250 300 600 250 160 250 300 − 300 375 300
− 100 150 200 100 50 100 100 − − 300 250 200 100 250 − 50 (Typ) 50 (Typ) 50 (Typ) 200 75 300 60 (Typ) 300
− − − − − − 10 10 − − 4.0 − − 10 4.0 − − − − − − − − 4.0
−
NSL35TT1
35
1000
100
−
−
−
−
NSL12TT1
12
1000
100
−
−
−
−
NSL05TT1
5.0
1000
100
−
−
−
−
MMBT2907AWT1
60
600
100
−
200
−
40
600
100
300
300
4.0
MMBT2222AWT1
−
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 181
Package
TO−236AB, SOT−23 Case 318−08
SOT−223 Case 318E−04
SOT−416, SC−75, SC−90 Case 463−01
SC−70, SOT−323 Case 419−04
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors High Voltage Transistors (> 100 V) NPN − MPSW42 − BF393 2N5551 − 2N6517 MPSA42 − BF422 2N5550 2N6515 MMBT6517LT1 − MMBTA42LT1 − MMBTA43LT1 MMBT5551LT1 − MMBT5550LT1 PZTA96ST1 BSP19AT1 PZTA42T1 − BF720T1 MSD42WT1
IC mA Max
Min
− PZTA92T1 BSP16T1 BF721T1
350 300 300 300 160 150 350 300 300 250 160 250 350 350 300 300 200 160 150 140 450 350 300 300 250
500 500 500 500 600 600 500 500 500 500 600 500 500 500 500 500 500 600 500 600 500 1000 500 1000 100
−
300
PNP BF493S − MPSW92 − − 2N5401 2N6520 − MPSA92 BF423 − − − MMBT6520LT1 − MMBTA92LT1 − − MMBT5401LT1 − −
V(BR)CEO
hFE
fT
NF
Max
MHz Min
dB Max
40 40 25 40 80 60 30 40 40 50 80 50 15 15 40 25 40 80 50 60 50 40 40 30 50
− − − − 250 240 200 − − − − 300 − − − − − 250 − 250 150 − − 120 −
50 50 50 50 100 100 40 50 50 60 100 40 40 40 50 50 50 − 100 − − 70 50 15 60
20 0.5 0.5 − 8.0 8.0 − 0.5 0.5 − 0.15 0.3 − − − − − − 8.0 − − − − − −
150
40
−
−
−
−
MSB92WT1
300
500
25
−
50
−
−
MSB92AWT1
300
500
120
200
50
−
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 182
Package
TO−226AE (1−WATT) TO−92 Case 29−10
TO−226AA, TO−92 Case 29−11
TO−236AB, SOT−23 Case 318−08
SOT−223 Case 318E−04
SC−70, SOT−323 Case 419−04
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors RF Transistors NPN
PNP
V(BR)CEO
IC mA Max
Min
Max
MHz Min
hFE
fT
Cap pF Max
MPSH10
−
25
−
60
−
650
BF959
−
20
100
40
−
600
MPSH17 MPS918 MPS5179 MPS3563 MMBTH10LT1
− − − − −
15 15 12 12 25
− 50 50 50 −
25 20 25 20 60
250 − 250 200 −
800 600
MMBTH10−4LT1
−
25
−
120
240
800
CCB = 0.7
MMBT918LT1
−
15
50
20
−
600
COBO = 1.7
BSV52LT1
−
12
100
40
120
400
−
MSD2714AT1
−
25
−
90
180
650
CCB = 0.7
MSC2295−BT1
−
20
30
70
140
150
CRE = 1.5
MSC2295−CT1
−
20
30
110
220
150
CRE = 1.5
NSF2250WT1
−
15
50
120
250
2000
COB = 1.2 pF CRE = 0.45 pF (Typ)
Package
CRB = 0.65 CRE = 0.65 (Typ)
CCB = 0.9 COBO = 1.7 CCB = 1.0 COBO = 1.7 CCB = 0.7
900
600 650
TO−226AA, TO−92 Case 29−11
TO−236AB, SOT−23 Case 318−08
SC−59 Case 318D−04
SC−70, SOT−323 Case 419−04
Devices listed in bold italic are ON Semiconductor preferred devices.
Switching Transistors NPN − − 2N4401 2N3904 P2N2222A MPS2222A − MPS3646 MPS2369 MPS2369A − MMBT2222ALT1 MMBT3904LT1 − MMBT4401LT1 − MMBT2369LT1 MMBT2369ALT1
PNP P2N2907A MPS2907A 2N4403 2N3906 − − MPS3638A − − − MMBT2907ALT1 − − MMBT3906LT1 − MMBT4403LT1 − −
V(BR)CEO
60 60 40 40 40 40 25 15 15 15 60 40 40 40 40 40 15 15
IC mA Max
Min
600 600 600 200 600 600 500 300 200 200 600 600 200 200 600 600 200 200
100 100 100 100 100 100 100 30 40 40 100 100 100 100 100 100 40 40
hFE
fT Max
MHz Min
Toff ns Max
300 300 300 300 300 300 − 120 120 120 300 300 300 300 300 300 120 120
200 200 200 250 300 300 150 350 − − 200 300 300 250 250 200 − −
110 110 − 300 285 285 − 28 18 18 100 285 250 300 255 255 18 18
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 183
Package
TO−226AA, TO−92 Case 29−11
TO−236AB, SOT−23 Case 318−08
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors Switching Transistors NPN − MMBT3904WT1 − MMBT2222AWT1 MMBT4401WT1 − MMBT3904TT1 − MMBT2222ATT1
PNP MMBT2907AWT1 − MMBT3906WT1 − − MMBT4403WT1 − MMBT3906TT1 −
IC mA Max
Min
60 40 40 40 40 40
600 200 200 600 600 600
40
hFE
fT Max
MHz Min
Toff ns Max
100 100 100 100 100 100
300 300 300 300 300 300
200 300 250 300 250 200
100 250 300 285 255 255
200
100
300
300
250
40
200
100
300
250
300
40
600
100
300
300
285
fT
Toff ns Max
V(BR)CEO
Package
SC−70, SOT−323 Case 419−04
SOT−416, SC−75, SC−90 Case 463−01
Devices listed in bold italic are ON Semiconductor preferred devices.
Multiple Switching Transistors Device
Type
V(BR)CEO
IC mA Max
Min
Max
MHz Min
hFE
MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1
Dual NPN Dual PNP Dual Complimentary Dual NPN
40 40 40 40
200 200 200 600
100 100 100 100
300 300 300 300
300 250 250 300
250 300 250/300 285
MMPQ3904
Quad NPN
40
200
75
−
250
136 (Typ)
MMPQ3906
Quad PNP
40
200
75
−
200
155 (Typ)
MMPQ6700
Quad Complimentary
40
200
70
−
200
155 (Typ)
MMPQ2369
Quad NPN
15
500
40
−
450
15 (Typ)
HN1B01FDW1T1
Dual Complimentary
50
200
200
400
−
−
Package
SC−88, SOT−363 Case 419B−02
SO−16 Case 751B−05
SC−74 Case 318F−05
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 184
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors C (OUT)
Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors.
NPN MUN2211T1 MUN2212T1 MUN2213T1 MUN2214T1 MUN2215T1 MUN2216T1 MUN2230T1 MUN2231T1 MUN2232T1 MUN2233T1 MUN2234T1 MUN2236T1 MUN2237T1 MUN2240T1 MUN2241T1 DTC144TT1 MMUN2211LT1 MMUN2212LT1 MMUN2213LT1 MMUN2214LT1 MMUN2215LT1 MMUN2216LT1 MMUN2230LT1 MMUN2231LT1 MMUN2232LT1 MMUN2233LT1 MMUN2234LT1 MMUN2238LT1 MMUN2241LT1 MUN5211T1 MUN5212T1 MUN5213T1 MUN5214T1 MUN5215T1 MUN5216T1 MUN5230T1 MUN5231T1 MUN5232T1 MUN5233T1 MUN5234T1 MUN5235T1 MUN5236T1 MUN5237T1
PNP MUN2111T1 MUN2112T1 MUN2113T1 MUN2114T1 MUN2115T1 MUN2116T1 MUN2130T1 MUN2131T1 MUN2132T1 MUN2133T1 MUN2134T1 MUN2136T1 MUN2137T1 MUN2140T1 − DTA144TT1 MMUN2111LT1 MMUN2112LT1 MMUN2113LT1 MMUN2114LT1 MMUN2115LT1 MMUN2116LT1 MMUN2130LT1 MMUN2131LT1 MMUN2132LT1 MMUN2133LT1 MMUN2134LT1 − − MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1
V(BR)CEO
IC mA Max
50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50
100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100
hFE
B (IN)
R2
R1
W
R2
Min 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 160 160 160 35 60 80 80 160 160 3.0 8.0 15 80 80 160 160 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80
10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 100K 47K 47K 100K 47K 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 100K 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 100K 47K
10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K 100K 22K ∞ ∞ ∞ 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K ∞ ∞ 10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K 47K 100K 22K
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 185
R1
W
E (GND)
Package
SC−59 Case 318D−04
TO−236AB, SOT−23 Case 318−08
SC−70, SOT−323 Case 419−04
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors C (OUT)
Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors.
NPN DTC114EET1 DTC124EET1 DTC144EET1 DTC114YET1 DTC114TET1 DTC143TET1 DTC123EET1 DTC143EET1 DTC143ZET1 DTC124XET1 DTC123JET1 DTC115EET1 DTC144WET1 DTC114EM3T5G DTC124EM3T5G DTC144EM3T5G DTC114YM3T5G DTC114TM3T5G DTC143TM3T5G DTC123EM3T5G DTC143EM3T5G DTC143ZM3T5G DTC124XM3T5G DTC123JM3T5G DTC115EM3T5G DTC144WM3T5G DTC144TM3T5G
PNP DTA114EET1 DTA124EET1 DTA144EET1 DTA114YET1 DTA114TET1 DTA143TET1 DTA123EET1 DTA143EET1 DTA143ZET1 DTA124XET1 DTA123JET1 DTA115EET1 DTA144WET1 DTA114EM3T5G DTA124EM3T5G DTA144EM3T5G DTA114YM3T5G DTA114TM3T5G DTA143TM3T5G DTA123EM3T5G DTA143EM3T5G DTA143ZM3T5G DTA124XM3T5G DTA123JM3T5G DTA115EM3T5G DTA144WM3T5G DTA144TM3T5G
V(BR)CEO
IC mA Max
50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50
100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100
hFE
B (IN)
R2
R1
W
R2
Min 35 60 80 80 160 160 8.0 15 80 80 80 80 80 35 60 80 80 160 160 8.0 15 80 80 80 80 80 160
10K 22K 47K 10K 10K 4.7K 2.2K 4.7K 4.7K 22K 2.2K 100K 47K 10K 22K 47K 10K 10K 4.7K 2.2K 4.7K 4.7K 22K 2.2K 100K 47K 47K
10K 22K 47K 47K ∞ ∞ 2.2K 4.7K 4.7K 47K 47K 100K 22K 10K 22K 47K 47K ∞ ∞ 2.2K 4.7K 4.7K 47K 47K 100K 22K ∞
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 186
R1
W
E (GND)
Package
SOT−416, SC−75, SC−90 Case 463−01
SOT−723 Case 631AA−01
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors C (OUT)
Dual Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors.
NPN MUN5211DW1T1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 NSBC114EDXV6T1 NSBC124EDXV6T1 NSBC144EDXV6T1 NSBC114YDXV6T1 NSBC114TDXV6T1 NSBC143TDXV6T1 NSBC113EDXV6T1 NSBC123EDXV6T1 NSBC143EDXV6T1 NSBC143ZDXV6T1 NSBC124XDXV6T1 NSBC123JDXV6T1 NSBC115EDXV6T1 NSBC144WDXV6T1 NSBC143XDXV6T2
IMH20TR1
PNP MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 MUN5136DW1T1 MUN5137DW1T1 NSBA114EDXV6T1 NSBA124EDXV6T1 NSBA144EDXV6T1 NSBA114YDXV6T1 NSBA114TDXV6T1 NSBA143TDXV6T1 NSBA113EDXV6T1 NSBA123EDXV6T1 NSBA143EDXV6T1 NSBA143ZDXV6T1 NSBA124XDXV6T1 NSBA123JDXV6T1 NSBA115EDXV6T1 NSBA144WDXV6T1 NSBA143XDXV6T2
−
V(BR)CEO
IC mA Max
50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50
15
hFE
R1
B (IN)
R2
R1
W
R2
Min
100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100
35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 20
10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 100K 47K 10K 22K 47K 10K 10K 4.7K 1.0K 2.2K 4.7K 4.7K 22K 2.2K 100K 47K 4.7K
10K 22K 47K 47K ∞ ∞ 1.0K 2.2K 4.7K 47K 47K 47K 100K 22K 10K 22K 47K 10K − − 1.0K 2.2K 4.7K 4.7K 47K 47K 100K 22K 10K
600
100
2.2K
−
W
E (GND)
Package
SC−88, SOT−363 Duals Case 419B−02
SOT−563 Duals Case 463A−01
SC−74 Case 318F−05
Devices listed in bold italic are ON Semiconductor preferred devices. 1. Devices in bold, samples starting Oct. 2002, production starting Dec. 2002. 2. Remainder of devices, 4 to 8 weeks after receipt of request based on note 1 timetable.
http://onsemi.com 187
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors C (OUT)
Combinational Digital Transistors (Bias Resistor Transistors) These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors.
Device MUN5311DW1T1 MUN5312DW1T1 MUN5313DW1T1 MUN5314DW1T1 MUN5315DW1T1 MUN5316DW1T1 MUN5330DW1T1 MUN5331DW1T1 MUN5332DW1T1 MUN5333DW1T1 MUN5334DW1T1 MUN5335DW1T1 UMA4NT1 UMA6NT1 UMC2NT1 UMC3NT1 UMC5NT1 NSB1706DMW5T1 EMA6DXV5T5 EMC2DXV5T5 EMC3DXV5T5 EMC4DXV5T5 EMC5DXV5T5 EMG2DXV5T5 EMG5DXV5T5 NSB1010XV5T5 EMD4DXV6T1 NSB1011XV6T1
V(BR)CEO
IC mA Max
50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50
100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100
50
Dual Common Base, Common Emitter
Type
B (IN)
R1 R2
hFE Q1
Q2
35 60 80 80 160 160 3.0 8.0 15 80 80 80 160 160 60 35 20 80 160 80 35 80 35
MUN5211 MUN5212 MUN5213 MUN5214 MUN5215 MUN5216 MUN5230 MUN5231 MUN5232 MUN5233 MUN5234 MUN5235 10K/10K 22K/22K 10K/10K 4.7K/10K 47K/∞ 4.7K/47K 47K 22K/22K 10K/10K 10K/47K 4.7K/10K
MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 MUN5130 MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 10K/10K 22K/22K 10K/10K 47K/47K 47K/∞ 4.7K/47K 47K 22K/22K 10K/10K 4.7K/47K 4.7K/47K
100
80
4.7K/47K
4.7K/47K
50
100
80
10K/47K
10K/47K
Dual Common Base Collector
50
100
−
4.7K/4.7K
10K/10K
Dual Complimentary
50
100
80
10K/47K
47K/47K
Dual
50
100
−
2.2K/47K
10K/10K
Dual Complimentary
Dual Common Emitter Dual Common Emitter Dual Common Base Collector Dual Common Base Collector Dual Common Base Collector Dual Common Emitter Dual Common Emitter Dual Common Base Collector Dual Common Base Collector Dual Common Base Collector Dual Common Base Collector Dual Common Base, Common Emitter
Min
Devices listed in bold italic are ON Semiconductor preferred devices. 1. Devices in bold, samples starting Oct. 2002, production starting Dec. 2002. 2. Remainder of devices, 4 to 8 weeks after receipt of request based on note 1 timetable.
http://onsemi.com 188
E (GND)
Package
SC−88, SOT−363 Case 419B−02
SC−88A, SOT−353 SC70−5 Case 419A−02
SOT−553 Case 463B−01
SOT−563 Case 463A−01
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors (3)
Complex Digital Transistors These devices include bias resistors on the semiconductor chip with the transistor. See the BRT diagram for orientation of resistors.
(2)
(1)
R1
Q1
Q2
R2 (4)
(6)
(5)
Switching Transistor Digital Transistor
hFE
V(BR)CEO V
IC (mA) Max
Min
EMF5XV6T5
12
500
EMF18XV6T5
60
EMF23XV6T5
60
Device
Package Max
hFE Min
R1 W
R2 W
270
680
80
47K
47K
100
120
560
80
47K
47K
100
120
560
35
10K
10K
Devices listed in bold italic are ON Semiconductor preferred devices. 1. Devices in bold, samples starting Oct. 2002, production starting Dec. 2002. 2. Remainder of devices, 4 to 8 weeks after receipt of request based on note 1 timetable.
http://onsemi.com 189
SOT−563 Case 463A−01
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Transistors Low Saturation Voltage Transistors NPN
MMBT489LT1
PNP
−
IC mA Max
Min
30
1000
V(BR)CEO
hFE
fT Max
MHz Min
VCE(sat) Max
300
900
100
0.20
−
MMBT589LT1
30
1000
100
300
100
0.25
−
MBT35200MT1
35
2000
100
400
100
0.15
−
MMBT6589T1
30
1000
100
300
100
0.25
−
30
3000
300
900
200
0.125
−
NSL35TT1
35
1000
100
−
−
0.37
−
NSL12TT1
12
1000
100
−
−
0.35
−
NSL05TT1
5.0
1000
100
−
−
−
−
NSL12AWT1
12
2000
100
300
100
−
NST489AMT1
Package
TO−236AB, SOT−23 Case 318−08
TSOP−6 Single Case 318G−02
SOT−416, SC−75, SC−90 Case 463−01
SC−88, SOT−363 Case 419B−02
−
NSS35200CF8T1G
35
7000
100
400
100
0.150 ChipFETt Case 1206A−03
MMBT2132T3
MMBT2131T1
30
700
150
−
−
− SC−74 Case 318F−05
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 190
ON Semiconductor Selector Guide − Discrete Devices
Junctional Field−Effect Transistors JFETs Low−Frequency/Low−Noise Re ťYfsť @ 1 kHz
Re ťYosť @ 1 kHz
mmho Min
μmho Max
− − − 2N5460 2N5461 2N5462 − − −
3.0 1.0 1.5 1.0 1.5 2.0 3.0 3.0 4.5
MMBF5460LT1
BFR30LT1 BFR31LT1
N−Channel
2N3819 2N5457 2N5458 − − − BF245A BF245B BF256A −
VGS(off) Volts
IDSS mA
Ciss pF Max
Crss pF Max
VGSS VGDO Volts Min
Min
Max
Min
Max
− 50 50 75 75 75 − − −
− 7.0 7.0 7.0 7.0 7.0 − − −
− 3.0 3.0 2.0 2.0 2.0 − − −
25 25 25 40 40 40 30 30 30
0.5 0.5 1.0 0.75 1.0 1.8 0.5 0.5 0.5
8.0 6.0 7.0 6.0 7.5 9.0 8.0 8.0 7.5
2.0 1.0 2.0 1.0 2.0 4.0 2.0 6.0 3.0
20 5.0 9.0 5.0 9.0 16 6.5 15 7.0
1.0
75
7.0
2.0
40
0.8
6.0
1.0
5.0
−
1.0
40
5.0
1.5
25
−
5.0
4.0
10
−
1.5
20
5.0
1.5
25
−
2.5
1.0
5.0
P−Channel
Package
TO−226AA, TO−92 Case 29−11
TO−236AB, SOT−23 Case 318−08
Devices listed in bold italic are ON Semiconductor preferred devices.
High−Frequency Amplifiers N−Channel
MPF102 2N5486
Re ťYfsť mmho Min
Re ťYosť μmho Max
Ciss pF Max
Crss pF Max
NF dB Max
VGSS VGDO Volts Min
Min
Max
Min
Max
1.6
200
7.0
3.0
−
25
−
8.0
2.0
20
VGS(off) Volts
IDSS mA
Package
3.5
100
5.0
1.0
4.0
25
2.0
6.0
8.0
20
J309
12 (Typ)
250 (Typ)
7.5
2.5
1.5 (Typ)
25
1.0
4.0
12
30
J310
12 (Typ)
250 (Typ)
7.5
2.5
1.5 (Typ)
25
2.0
6.5
24
60
MMBF5457LT1
1.0
50
7.0
3.0
4.0
25
0.5
6.0
1.0
5.0
MMBF5484LT1
3.0
50
5.0
1.0
3.0
25
0.3
3.0
1.0
5.0
MMBFJ309LT1
10
250
5.0
2.5
4.0
25
1.0
4.0
12
30
MMBFJ310LT1
8.0
250
5.0
2.5
4.0
25
2.0
6.5
24
60
MMBFU310LT1
10
250
5.0
2.5
4.0
25
2.5
6.0
24
60
MMBF4416LT1
4.5
50
4.0
0.8
2.0
30
−
6.0
5.0
15
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 191
TO−226AA, TO−92 Case 29−11
TO−236AB, SOT−23 Case 318−08
ON Semiconductor Selector Guide − Discrete Devices
Junctional Field−Effect Transistors JFETs Switches and Choppers N−Channel
P−Channel
RDS(on) Ω Max
Ciss pF Max
Crss pF Max
VGSS VGDO Volts Min
Min
Max
Min
VGS(off) Volts
IDSS mA Max
ton ns Max
toff ns Max
J112
−
50
28
5.0
35
1.0
5.0
5.0
−
−
−
MPF4392
−
60
10
3.5
30
−
−
25
75
15
35
2N5639
−
60
10
4.0
30
−
25
−
−
−
MPF4393
−
100
10
3.5
30
−
5.0
30
15
55
J110
−
18
−
−
25
0.5
4.0
10
−
−
−
2N5638
−
30
10
4.0
30
−
−
50
−
4.0
5.0
J111
−
30
28
5.0
35
3.0
10
20
−
−
−
BSR58LT1
−
60
28
5.0
40
0.8
4.0
8.0
80
−
−
MMBF4391LT1
−
30
10
3.5
30
4.0
10
50
150
−
−
MMBF4392LT1
−
60
10
3.5
30
2.0
5.0
25
75
−
−
MMBF4393LT1
−
100
10
3.5
30
0.5
3.0
5.0
30
−
−
−
MMBFJ175LT1
125
11
5.5
30
3.0
6.0
7.0
60
−
−
−
MMBFJ177LT1
300
−
−
30
0.8
2.5
1.5
20
−
−
8.0 (Typ)
12 (Typ)
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 192
Package
TO−226AA, TO−92 Case 29−11
TO−236AB, SOT−23 Case 318−08
ON Semiconductor Selector Guide − Discrete Devices
Tuning and Switching Diodes Tuning Diodes − Abrupt Junction CT @ VR = 4.0 V, 1.0 MHz
VR Volts
Device
pF Min
pF Nominal
pF Max
Cap Ratio Min
Q @ 4.0 V 50 MHz Typ
MV2101
30
6.1
6.8
7.5
2.5
450
MV2105
30
13.5
15
16.5
2.5
400
MV2109
30
29.7
33
36.3
2.5
200
LV2209
25
26.4
−
39.6
2.5
150
MMBV2105LT1 MMBV2107LT1 MMBV2109LT1 MMBV2101LT1 MMBV2108LT1 MMBV3102LT1
30 30 30 30 30 30
13.5 19.8 29.7 6.1 24.3 20
15 22 33 6.8 − −
16.5 24.2 36.3 7.5 29.7 25
2.5 2.5 2.5 2.5 2.5 4.5
400 350 200 450 200 200
MMVL2101T1
30
6.1
6.8
7.5
2.5
400 (Min)
MMVL2105T1
30
13.5
15
16.5
2.5
350 (Min)
Package
TO−226AC, TO−92 2−Lead Case 182−06
TO−236AB, SOT−23 Case 318−08
SOD−323 Case 477−02
Devices listed in bold italic are ON Semiconductor preferred devices.
Tuning Diodes − Hyper−Abrupt Junction Device
VR Volts
CT (f = 1.0 MHz) pF Min
pF Max
Volts
Cap Ratio Min
Max
Type
Volts
Q 3.0 V Min
MV209
30
26
32
3.0
5.0
6.5
3.0/25
200
Single
MV104
32
37
42
3.0
2.5
2.8
−
100
Single
MMBV105GLT1 MMBV109LT1 MMBV409LT1 MMBV809LT1
30 30 20 20
1.5 26 26 4.5
2.8 32 32 6.1
25 3.0 3.0 2.0
4.0 5.0 1.5 1.8
6.5 6.5 1.9 2.6
3.0/25 3.0/25 3.0/8.0 2.0/8.0
Single
MMBV432LT1
14
43
48
2.0
1.5
2.0
−
200 200 200 300 100@ 2.0V
MMBV609LT1
20
26
32
3.0
1.8
2.4
3/8
250
MMVL809T1 MMVL3102T1 MMVL109T1 MMVL409T1
20 30 30 20
4.5 20 26 26
6.1 25 32 32
2 3 3 3
1.8 4.5 5.0 1.5
2.6 − 6.5 1.9
2.0/8.0 3.0/25 3.0/25 3.0/8.0
300 200 200 200
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 193
Package
TO−226AC, TO−92 2−Lead Case 182−06
Single Single Single Single
TO−236AB, SOT−23 Case 318−08
Dual Common Cathode Single Single Single Single
SOD−323 Case 477−02
ON Semiconductor Selector Guide − Discrete Devices
Schottky Diodes Device
VR Volts
CT @ V pF Max
IR @ V
Volts
VF Volts Max
nA Max
Volts
Type
MBD701
70
1.0
20
1.0
200
35
Single
MBD301
30
1.5
15
0.6
200
25
Single
MBD101
7.0
1.0
0
0.6
250
3.0
Single
MMSD701T1
70
1.0
20
1.0
200
35
Single
BAT54T1
30
10
1.0
0.4
2000
25
Single
MMSD301T1
30
1.5
15
0.6
200
25
Single
MMDL770T1 BAT54HT1 MMDL301T1 RB751V40T1 MMDL101T1 NSR0320MW2T1 BAS70LT1 BAS70−04LT1 MMBD701LT1 BAS40LT1 BAS40−04LT1 BAS40−06LT1 BAT54CLT1 BAT54LT1 BAT54ALT1 BAT54SLT1 MMBD301LT1 MMBD452LT1 MMBD101LT1 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 MMBD770T1 BAT54AWT1 BAT54CWT1 BAT54WT1 BAT54SWT1 MMBD330T1 MMBD717LT1 MMBD352WT1
70 30 30 30 7.0 23 70 70 70 40 40 40 30 30 30 30 30 30 7.0 7.0 7.0 7.0 7.0 70 30 30 30 30 30 20 7.0
1.0 10 1.5 2.5 1.0 35 2.0 2.0 1.0 5.0 5.0 5.0 10 10 10 10 1.5 1.5 1.0 1.0 1.0 1.0 1.0 1.0 10 10 10 10 1.5 2.5 1.0
20 1.0 15 1.0 0 5.0 0 0 20 1.0 1.0 1.0 1.0 1.0 1.0 1.0 15 15 0 0 0 0 0 20 1.0 1.0 1.0 1.0 15 1.0 0
1.0 0.4 0.6 0.37 0.6 0.27 0.75 0.75 1.0 0.5 0.5 0.5 0.4 0.4 0.4 0.4 0.6 0.6 0.6 0.6 0.6 0.6 0.6 1.0 0.4 0.4 0.4 0.4 0.6 0.37 0.6
200 2000 200 500 250 1000 100 100 200 1000 1000 1000 2000 2000 2000 2000 200 200 250 250 250 250 250 200 2000 2000 2000 2000 200 1000 250
35 25 25 30 3.0 15 50 50 35 25 25 25 25 25 25 25 25 25 3.0 3.0 3.0 3.0 3.0 35 25 25 25 25 25 10 3.0
Single Single Single Single Single Single Single Dual Series Single Single Dual Series Dual Common Anode Dual Common Cathode Single Dual Common Anode Dual Series Single Dual Series Single Dual Series Dual Series Dual Common Cathode Dual Common Anode Single Dual Common Anode Dual Common Cathode Single Dual Series Single Dual Common Anode Dual Series
BAT54CTT1
30
10
1.0
0.4
2000
25
Dual Common Cathode
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 194
Package
TO−226AC, TO−92 2−Lead Case 182−06
SOD−123 Case 425−04
SOD−323 Case 477−02
TO−236AB, SOT−23 Case 318−08
SC−70, SOT−323 Case 419−04
SOT−416, SC−75, SC−90 Case 463−01
ON Semiconductor Selector Guide − Discrete Devices
Schottky Diodes Device
VR Volts
CT @ V pF Max
IR @ V
Volts
VF Volts Max
nA Max
Volts
Type
Package
MBD770DWT1 MBD54DWT1 MBD330DWT1 NSR15TW1T2 NSR15DW1T1 NSR15SDW1T1 MBD110DWT1
70 30 30 15 15 15 7.0
1.0 1.0 1.5 1.0 1.0 1.0 1.0
0 0 0 0 0 0 0
0.5 0.32 0.4 0.415 0.415 0.415 0.6
200 2000 200 50 50 50 250
35 25 25 1.0 1.0 1.0 3.0
Dual Series Dual Series Dual Series Triple Dual Series Dual Series Dual Series
NSR0320XV6T1
23
35
5.0
0.27
1000
15
Single
SC−88, SOT−363 Case 419B−02
SOT−563 Case 463A−01
BAT54CXV3T1
30
10
1.0
0.4
2000
25
Dual Common Cathode SC−89 Case 463C−03
RB751S40T1
40
2.5
1.0
0.37
500
30
Single
BAT54XV2T1
30
10
1.0
0.4
2000
25
Single
RB520S30T1
30
−
−
0.5
30000
10
Single
RB521S30T1
30
−
−
0.6
1000
10
Single
NSR0320XV6T1
23
35
5.0
0.27
1000
15
Single
SOD−523 Case 502−01
SOT−563 Case 463A−01
Device
NSR30CM3T5G
Technology
VR Volts
Schottky
30
CT @ V pF Max
Volts
0
1.0
VF Max
IR @ V
Volts
nA Max
Volts
TRR nS
0.8
2.0
25
5
Package
SOT−723 Case 631AA−01
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 195
ON Semiconductor Selector Guide − Discrete Devices
Switching Diodes PIN Switching Diodes CT @ V
VR Volts Min
Volts
Resistance W Max
IR μA Max
Type
pF Max
MPN3700
200
1.0
20
1.0
0.1
Single
MPN3404
20
2.0
15
0.85
0.1
Single
MSD6100
100
1.5
0.0
−
0.1
Dual Common Cathode
Device
Package
TO−226AC, TO−92 2−Lead Case 182−06
TO−226AA, TO−92 Case 29−11
MMBV3700LT1
200
1.0
20
1.0
0.1
Single
MMBV3401LT1
35
1.0
20
0.7
0.1
Single
MMVL3401T1
35
1.0
20
0.7
0.1
Single
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 196
TO−236AB, SOT−23 Case 318−08
SOD−323 Case 477−02
ON Semiconductor Selector Guide − Discrete Devices
Switching Diodes General−Purpose Signal and Switching Diodes Device BAS21LT1 BAS21SLT1 MMBD914LT1 BAS16LT1 MMBD6050LT1 BAL99LT1 BAS116LT1 MMBD7000LT1 MMBD2836LT1 MMBD2838LT1 BAV70LT1 BAV99LT1 BAW56LT1 MMBD6100LT1 BAV74LT1 MMBD2835LT1 MMBD2837LT1 BAV199LT1 BAS20LT1 BAS19LT1 M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 M1MA142KT1 M1MA174T1 M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1 DAP202U MMSD914T1 MMSD71RKT1 MMSD103T1 MMSD4148T1
VF
VR Min Volts
IR Max μA
Min Volts
Max Volts
CT Max pF
trr Max ns
Type
250 250 100 75 70 70 75 100 75 75 70 70 70 70 50 35 35 70 200 120 40 40 80 80 40 40 80 80 75 40 80 100 80 80 70 70 70 70 40 40 − 100 80 250 100
0.1 0.1 5.0 1.0 0.1 2.5 0.005 1.0 0.1 0.1 5.0 2.5 2.5 0.1 0.1 0.1 0.1 0.005 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 1.0 0.1 0.1 5.0 0.1 0.1 2.5 5.0 2.5 2.5 0.1 0.1 0.1 5.0 0.5 100 5.0
− − − − 0.85 − − 0.75 − − − − − 0.85 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − −
1.0 1.0 1.0 1.0 1.1 1.0 0.9 1.1 1.0 1.0 1.0 1.0 1.0 1.1 1.0 1.0 1.0 0.9 1.0 1.0 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.25 1.2 1.2 1.0 1.2 1.2 1.0 1.0 1.0 1.0 1.2 1.2 1.2 1.0 1.2 1.0 1.0
5.0 5.0 4.0 2.0 2.5 1.5 2.0 1.5 4.0 4.0 1.5 1.5 2.0 2.5 2.0 4.0 4.0 2.0 5.0 5.0 2.0 2.0 2.0 2.0 15 2.0 15 2.0 2.0 2.0 2.0 4.0 2.0 15 2.0 1.5 1.5 1.5 2.0 15 3.5 4.0 2.0 5.0 4.0
50 50 4.0 6.0 4.0 6.0 3000 4.0 4.0 4.0 6.0 4.0 6.0 4.0 4.0 4.0 4.0 3000 50 50 3.0 3.0 3.0 3.0 10 3.0 10 3.0 6.0 3.0 3.0 4.0 3.0 10 6.0 6.0 6.0 6.0 3.0 10 10 4.0 4.0 50 4.0
Single Dual Series Single Single Single Single Single Dual Series Dual Common Anode Dual Common Cathode Dual Common Cathode Dual Series Dual Common Anode Dual Common Cathode Dual Common Cathode Dual Common Anode Dual Common Cathode Dual Series Single Single Single Single Single Single Dual Common Anode Dual Common Cathode Dual Common Anode Dual Common Cathode Single Single Single Single Dual Common Cathode Dual Common Anode Dual Common Anode Dual Common Cathode Dual Series Dual Series Dual Common Cathode Dual Common Anode Dual Common Anode Single Single Single Single
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 197
Package
TO−236AB, SOT−23 Case 318−08
SC−59 Case 318D−04
SC−70, SOT−323 Case 419−04
SOD−123 Case 425−04
ON Semiconductor Selector Guide − Discrete Devices
Switching Diodes General−Purpose Signal and Switching Diodes BAS16HT1 BAS20HT1 BAS21HT1 MMDL914T1 MMDL6050T1 BAS16TT1 DA121TT1 DAP222 BAW56TT1 DAN222 BAV70TT1
75 200 250 100 70 75 80 80 70 80 70
1.0 0.1 0.1 5.0 0.1 1.0 1.0 0.1 2.5 0.1 5.0
HN2D02FUTW1T1
85
0.1
−
1.0
1.2 1.0 1.2 1.0
2.0 5.0 5.0 4.0 2.5 2.0 2.0 3.5 2.0 3.5 1.5
6.0 50 50 4.0 4.0 6.0 6.0 4.0 6.0 4.0 6.0
Single Single Single Single Single Single Single Dual Common Anode Dual Common Anode Dual Common Cathode Dual Common Cathode
− − 0.85 −
1.0 1.0 1.1 1.0
− − − −
−
1.2
2.0
3.0
Triple Independent
SOD−323 Case 477−02
SOT−416, SC−75, SC−90 Case 463−01
SC−88 Case 419B−02
BAS21DW5T1
250
0.1
−
1.0
5.0
50
Single SC−88A Case 419A−02
1SS400T1
100
0.1
−
1.2
3.0
4.0
Single
BAS16XV2T1
75
1.0
−
1.0
2.0
6.0
Single
NSD914XV2T1
100
−
−
1.0
4.0
4.0
Single
DAN222M3T5G
80
0.1
−
1.2
3.5
4.0
Dual Common Cathode
DAP222M3T5G
80
0.1
−
1.2
3.5
4.0
Dual Common Anode
BAS16M3T5G
75
1.0
−
1.0
2.0
6.0
Single
SOD−523 Case 502−01
SOT−723 Case 631AA−01
Devices listed in bold italic are ON Semiconductor preferred devices.
Switching and Schottky Diode Arrays Device
Technology
VR Volts
BAV70DXV6T1 NSDEMN11XV6T1 BAW56DXV6T1 NSDEMP11XV6T1 BAS16DXV6T1
Switching Switching Switching Switching Switching
NSR15ADXV6T5
Schottky
CT @ V
VF Max
IR @ V
pF Max
Volts
Volts
IF
nA Max
Volts
TRR nS
70 80 70 70 75
1.5 3.5 2.0 3.5 2.0
0 6.0 0 6 0
1.25 1.2 1.25 1.2 1.25
150 mA 100 mA 150 mA 100 mA 150 mA
5000 100 2.5 100 1.0
70 70 70 70 75
6 4 6 4 6
15
1.0
0
0.68
10 mA
0.05
1.0
−
Package
SOT−563 Case 463A−01
SOT−563 Case 463A−01
Devices listed in bold italic are ON Semiconductor preferred devices. 1. Devices in bold, samples starting Oct. 2002, production starting Dec. 2002. 2. Remainder of devices, 4 to 8 weeks after receipt of request based on note 1 timetable.
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ON Semiconductor Selector Guide − Discrete Devices
Zener Regulator Diodes
In Brief . . .
Page
Zener Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Axial Leaded . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW (SOD−523) . . . . . . . . . . . . . . . . . . . . . . . 200 mW (SOD−323) . . . . . . . . . . . . . . . . . . . . . . . 225 mW (SOT−23) . . . . . . . . . . . . . . . . . . . . . . . . 500 mW (SOD−123) . . . . . . . . . . . . . . . . . . . . . . . 1.5 W (SMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 W (SMB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0 W (POWERMITER) . . . . . . . . . . . . . . . . . . . . Dual Zeners . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SOT−23 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
All systems have an unregulated or loosely regulated voltage source. Zener diodes provide a constant reverse voltage for the regulation of this source to create a clean, accurately regulated current supply that can be used to power system electronics. ON Semiconductor has one of the broadest Zener portfolios in the industry, specializing in micropackaging for space−constrained applications. Whether your application requirements include automotive, computing, industrial, consumer, or portable, ON Semiconductor has a solution for you. Our line features the following: • Wide Voltage Range: 1.8 V to 200 V • Steady State Power Dissipation from 200 mW to 5.0 W • Leading Edge Micropackaging: SOD−323, SOD−523 • 2% Tolerance Available: SOD−323, SOD−523, SOT−23 • Energy Rated Zeners in SOT−23, SOD−123 • Lead (Pb) Free Available (MSL1, 260° +5/−0 °C reflow capable)
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200 200 200 200 202 202 202 204 206 208 208 208 210 210
ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Axial Leads Table 1. Axial Leaded − 3, 5 Watt Nominal Zener Breakdown Voltage
3 Watt
5 Watt
Cathode = Polarity Band
Cathode =Polarity Band
Plastic Surmetic 30 Case 59-10 (DO-41)
Plastic Surmetic 40 Case 17
Volts
1.8 2.0 2.2 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12
MZP4729A
1N5913B
1N5333B 1N5334B
MZP4734A
1N5919B
1N5335B 1N5336B 1N5337B 1N5338B 1N5339B
MZP4735A
1N5920B 1N5921B
MZP4738A 1N5924B MZP4740A 1N5927B
13 14 15 16 17
1N5929B 1N5930B
18 19 20 22 24
1N5931B 1N5932B 1N5934B
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1N5340B 1N5341B 1N5342B 1N5343B 1N5344B 1N5346B 1N5347B 1N5348B 1N5349B 1N5350B 1N5351B 1N5352B 1N5353B 1N5354B 1N5355B 1N5356B 1N5357B 1N5358B 1N5359B
ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Axial Leads (continued) Table 1. Axial Leaded − 3, 5 Watt (continued) Nominal Zener Breakdown Voltage
3 Watt
5 Watt
Cathode = Polarity Band
Cathode = Polarity Band
Volts Plastic Surmetic 30 Case 59-10 (DO-41) 25 27 28 30 33
Plastic Surmetic 40 Case 17
MZP4750A
1N5935B
MZP4751A
1N5936B 1N5937B
36 39 43 47 51
1N5938B
56 60 62 68 75 82 87 91 100 110
1N5940B 1N5941B 1N5942B
1N5365B 1N5366B 1N5367B 1N5368B 1N5369B
1N5946B
1N5370B 1N5371B 1N5372B 1N5373B 1N5374B
1N5948B
120 130 140 150 160
1N5360B 1N5361B 1N5362B 1N5363B 1N5364B
1N5375B 1N5376B 1N5377B 1N5378B 1N5379B 1N5380B 1N5381B
170 180 190 200
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1N5953B
1N5383B 1N5384B
1N5955B
1N5386B
1N5956B
1N5388B
ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Surface Mount Table 2. Surface Mount Packages − 0.2 Watt Nominal Zener Breakdown Voltage
200 mW Standard Tolerance SOD−523
200 mW Tight Tolerance SOD−523
200 mW Standard Tolerance SOD−323
200 mW Tight Tolerance SOD−323
Case 502
Case 502
Case 477 Style 1
Case 477 Style 1
Volts
1.8 2.0 2.2 2.4 2.5
MM5Z2V4
MM3Z2V4 MM5Z2V4S
2.7 2.8 3.0 3.3 3.6 3.7
MM5Z2V7
MM3Z2V7
MM5Z3V0 MM5Z3V3 MM5Z3V6
MM3Z3V0 MM3Z3V3 MM3Z3V6
3.9 4.0 4.3 4.7 5.1 5.6
MM5Z3V9
MM3Z3V9
6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 14.5 15 16 17
MM5Z4V3 MM5Z4V7 MM5Z5V1 MM5Z5V6
MM5Z4V3S MM5Z4V7S MM5Z5V1S MM5Z5V6S
MM3Z4V3 MM3Z4V7 MM3Z5V1 MM3Z5V6
MM3Z3V9S MM3Z4V3S MM3Z4V7S MM3Z5V1S MM3Z5V6S
MM5Z6V2 MM5Z6V8 MM5Z7V5 MM5Z8V2
MM5Z6V2S MM5Z6V8S MM5Z7V5S MM5Z8V2S
MM3Z6V2 MM3Z6V8 MM3Z7V5 MM3Z8V2
MM3Z6V2S MM3Z6V8S MM3Z7V5S MM3Z8V2S
MM5Z9V1S
MM5Z12V
MM3Z9V1 MM3Z10V MM3Z11V MM3Z12V
MM3Z9V1S MM3Z10VS MM3Z11VS MM3Z12VS
MM5Z13V
MM3Z13V
MM5Z15V MM5Z16V
MM3Z15V MM3Z16V
MM3Z16VS
MM3Z18V
MM3Z18VS
MM5Z10V
18 19 20 22 24 25 27 28 30 33
MM3Z3V3S
MM5Z18VS
MM3Z20V MM3Z22V MM3Z24V MM5Z27V
MM3Z27V
MM5Z30V MM5Z33V
MM3Z30V MM3Z33V
Devices listed in bold, italic are ON Semiconductor preferred devices.
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ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Surface Mount (continued) Table 2. Surface Mount Packages − 0.2 Watt (continued) Nominal Zener Breakdown Voltage
200 mW Standard Tolerance SOD−523
200 mW Tight Tolerance SOD−523
200 mW Standard Tolerance SOD−323
200 mW Tight Tolerance SOD−323
Case 502
Case 502
Case 477 Style 1
Case 477 Style 1
Volts
36 39 43 47 51
MM3Z36V MM3Z39V MM3Z43V
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ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Surface Mount (continued) Table 3. Surface Mount Packages − 0.225 Watt Nominal Zener Breakdown Voltage
225 mW Standard Tolerance SOT−23
225 mW Tight Tolerance SOT−23
225 mW Energy Rated SOT−23
225 mW Standard Tolerance SOT−23
225 mW Energy Rated SOT−23
Case 318
Case 318
Case 318
Case 318
Case 318
Volts
1.8 2.0 2.2 2.4 2.5
BZX84C2V4L
MMBZ5221BL MMBZ5222BL
2.7 2.8 3.0 3.3 3.6 3.7
BZX84C2V7L
MMBZ5223BL
BZX84C3V0L BZX84C3V3L BZX84C3V6L
BZX84C3V3E
3.9 4.0 4.3 4.7 5.1 5.6
BZX84C3V9L BZX84C4V3L BZX84C4V7L BZX84C5V1L BZX84C5V6L
6.0 6.2 6.8 7.5 8.2
BZX84C6V2L BZX84C6V8L BZX84C7V5L BZX84C8V2L
8.7 9.1 10 11 12
BZX84C9V1L BZX84C10L BZX84C11L BZX84C12L
BZX84C9V1E BZX84C10E
13 14 15 16 17
BZX84C13L
BZX84C13E
BZX84C15L BZX84C16L
BZX84C15E BZX84C16E
18 19 20 22 24
BZX84C18L
25 27 28 30 33
BZX84B5V1L BZX84B5V6L BZX84B6V2L
MMBZ5225BL MMBZ5226BL MMBZ5227BL
MMBZ5227E
BZX84C3V9E
MMBZ5228BL
MMBZ5228EL
BZX84C4V7E BZX84C5V1E BZX84C5V6E
MMBZ5229BL MMBZ5230BL MMBZ5231BL MMBZ5232BL
MMBZ5229EL MMBZ5230EL MMBZ5231EL MMBZ5232EL
BZX84C6V2E BZX84C6V8E BZX84C7V5E BZX84C8V2E
MMBZ5233BL MMBZ5234BL MMBZ5235BL MMBZ5236BL MMBZ5237BL
BZX84C12E
BZX84B18L
BZX84C18E
BZX84C20L BZX84C22L BZX84C24L
BZX84C24E
BZX84C27L
BZX84C27E
BZX84C30L BZX84C33L
Devices listed in bold, italic are ON Semiconductor preferred devices.
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MMBZ5238BL MMBZ5239BL MMBZ5240BL MMBZ5241BL MMBZ5242BL
MMBZ5234EL
MMBZ5237EL
MMBZ5240EL MMBZ5242EL
MMBZ5243BL MMBZ5244BL MMBZ5245BL MMBZ5246BL MMBZ5247BL
MMBZ5243EL MMBZ5244EL MMBZ5245EL MMBZ5246EL
MMBZ5248BL MMBZ5249BL MMBZ5250BL MMBZ5251BL MMBZ5252BL
MMBZ5248EL
MMBZ5253BL MMBZ5254BL MMBZ5255BL MMBZ5256BL MMBZ5257BL
MMBZ5252EL MMBZ5254EL
ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Surface Mount (continued) Table 3. Surface Mount Packages − 0.225 Watt (continued) Nominal Zener Breakdown Voltage
225 mW Standard Tolerance SOT−23
225 mW Tight Tolerance SOT−23
225 mW Energy Rated SOT−23
225 mW Standard Tolerance SOT−23
225 mW Energy Rated SOT−23
Case 318
Case 318
Case 318
Case 318
Case 318
BZ84C36E
MMBZ5258BL MMBZ5259BL
Volts
36 39 43 47 51
BZX84C36L BZX84C39L BZX84C43L BZX84C47L BZX84C51L
56 60 62 68 75
BZX84C56L
BZX84C43E MMBZ5261BL MMBZ5262BL MMBZ5263BL MMBZ5264BL MMBZ5265BL
BZX84C62L BZX84C68L BZX84C75L
82 87 91
MMBZ5268BL MMBZ5270BL
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MMBZ5261E
ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Surface Mount (continued) Table 4. Surface Mount Packages − 0.5 Watt Nominal Zener Breakdown Voltage
500 mW SOD−123
500 mW Energy Rated SOD−123
Case 425
Case 425
500 mW SOD−123
500 mW Energy Rated SOD−123
500 mW SOD−123
500 mW Energy Rated SOD−123
Case 425
Case 425
Case 425
Case 425
MMSZ5221B MMSZ5222B
MMSZ5221E MMSZ5222E
MMSZ5223B MMSZ5224B MMSZ5225B MMSZ5226B MMSZ5227B
MMSZ5223E
Volts
1.8 2.0 2.2 2.4 2.5
MMSZ4678 MMSZ4679 MMSZ4680 MMSZ4681
MMSZ2V4
2.7 2.8 3.0 3.3 3.6 3.7
MMSZ2V7 MMSZ3V0 MMSZ3V3 MMSZ3V6
MMSZ4683 MMSZ4684 MMSZ4685
3.9 4.0 4.3 4.7 5.1 5.6
MMSZ3V9
MMSZ4686
MMSZ4V3 MMSZ4V7 MMSZ5V1 MMSZ5V6
6.0 6.2 6.8 7.5 8.2
MMSZ6V2 MMSZ6V8 MMSZ7V5 MMSZ8V2
8.7 9.1 10 11 12
MMSZ9V1 MMSZ10 MMSZ11 MMSZ12
MMSZ2V7E
MMSZ4V7E
MMSZ8V2E
13 14 15 16 17
MMSZ13 MMSZ15 MMSZ16
MMSZ15E
18 19 20 22 24
MMSZ18
MMSZ18E
25 27 28 30 33
MMSZ20 MMSZ22 MMSZ24 MMSZ27 MMSZ30 MMSZ33
MMSZ4682
MMSZ4687 MMSZ4688 MMSZ4689 MMSZ4690
MMSZ4684E
MMSZ5228B
MMSZ4688E MMSZ4689E MMSZ4690E
MMSZ5229B MMSZ5230B MMSZ5231B MMSZ5232B
MMSZ4691 MMSZ4692 MMSZ4693 MMSZ4694
MMSZ5233B MMSZ5234B MMSZ5235B MMSZ5236B MMSZ5237B
MMSZ4695 MMSZ4696 MMSZ4697 MMSZ4698 MMSZ4699
MMSZ5238B MMSZ5239B MMSZ5240B MMSZ5241B MMSZ5242B
MMSZ4700 MMSZ4701 MMSZ4702 MMSZ4703 MMSZ4704 MMSZ4705 MMSZ4706 MMSZ4707 MMSZ4708 MMSZ4709 MMSZ4710 MMSZ4711 MMSZ4712 MMSZ4713 MMSZ4714
Devices listed in bold, italic are ON Semiconductor preferred devices.
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MMSZ5226E
MMSZ4697E MMSZ4699E
MMSZ5235E MMSZ5236E MMSZ5237E
MMSZ5240E MMSZ5242E
MMSZ4702E
MMSZ5243B MMSZ5244B MMSZ5245B MMSZ5246B MMSZ5247B
MMSZ5244E MMSZ5245E MMSZ5246E
MMSZ4705E
MMSZ5248B
MMSZ5248E
MMSZ5250B MMSZ5251B MMSZ5252B
MMSZ5250E
MMSZ5253B MMSZ5254B MMSZ5255B MMSZ5256B MMSZ5257B
MMSZ5252E
MMSZ5256E MMSZ5257E
ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Surface Mount (continued) Table 4. Surface Mount Packages − 0.5 Watt (continued) Nominal Zener Breakdown Voltage
500 mW SOD−123
500 mW Energy Rated SOD−123
Case 425
Case 425
500 mW SOD−123
500 mW Energy Rated SOD−123
500 mW SOD−123
500 mW Energy Rated SOD−123
Case 425
Case 425
Case 425
Case 425
Volts
36 39 43 47 51
MMSZ36 MMSZ39 MMSZ43
MMSZ4715 MMSZ4717
MMSZ5258B MMSZ5259B MMSZ5260B MMSZ5261B MMSZ5262B
56 60 62 68 75
MMSZ5263B MMSZ5264B MMSZ5265B MMSZ5266B MMSZ5267B
82 87 91 100 110
MMSZ5268B MMSZ5270B MMSZ5272B
Devices listed in bold, italic are ON Semiconductor preferred devices.
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MMSZ5259E MMSZ5260E
MMSZ5263E
ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Surface Mount (continued) Table 5. Surface Mount Packages − 1.5, 3 Watt Nominal Zener Breakdown Voltage
1.5 Watt
1.5 Watt
3 Watt
3 Watt
SMA
SMA
POWERMITEt
SMB
Cathode Volts
Plastic Case 403B Cathode = Notch
Plastic Case 403B Cathode = Notch
Anode
ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Plastic Case 457
Plastic Case 403A
1.8 2.0 2.2 2.4 2.5 2.7 2.8 3.0 3.3 3.6
1SMA5913B 1SMA5914B
1SMB5913B 1SMB5914B
3.9 4.3 4.7 5.1 5.6
1SMA5915B 1SMA5916B 1SMA5917B 1SMA5918B 1SMA5919B
1SMB5915B 1SMB5916B 1SMB5917B 1SMB5918B 1SMB5919B
6.0 6.2 6.8 7.5 8.2
1SMA5920B 1SMA5921B 1SMA5922B 1SMA5923B
1PMT5920B 1PMT5921B 1PMT5922B 1PMT5923B
1SMB5920B 1SMB5921B 1SMB5922B 1SMB5923B
8.7 9.1 10 11 12
1SMA5924B 1SMA5925B 1SMA5926B 1SMA5927B
1PMT5924B 1PMT5925B 1PMT5927B
1SMB5924B 1SMB5925B 1SMB5926B 1SMB5927B
1PMT5929B
1SMB5928B 1SMB5929B
1PMT5930B
1SMB5930B
13 14 15 16 17
1SMA5928B
18 19 20 22 24
1SMA5931B
1PMT5931B
1SMB5931B
1SMA5932B 1SMA5933B 1SMA5934B
1PMT5933B 1PMT5934B
1SMB5932B 1SMB5933B 1SMB5934B
25 27 28 30 33
1SMA5929B 1SMA5930B
BZG03C15
1SMA5935B
1SMB5935B
1SMA5936B 1SMA5937B
1PMT5936B
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1SMB5936B 1SMB5937B
ON Semiconductor Selector Guide − Discrete Devices
Zener Diodes − Regulation in Surface Mount (continued) Table 5. Surface Mount Packages − 1.5, 3 Watt (continued) Nominal Zener Breakdown Voltage
1.5 Watt
1.5 Watt
3 Watt
3 Watt
SMA
SMA
POWERMITE
SMB
Cathode Volts
Plastic Case 403B Cathode = Notch
Plastic Case 403B Cathode = Notch
Anode
ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ Á ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Plastic Case 457
Plastic Case 403A
36 39 43 47 51
1SMA5938B 1SMA5939B 1SMA5940B 1SMA5941B 1SMA5942B
56 60 62 68 75
1SMA5943B
1SMB5943B
1SMA5944B 1SMA5945B
1SMB5944B 1SMB5945B 1SMB5946B
1PMT5939B 1PMT5941B
1SMB5938B 1SMB5939B 1SMB5940B 1SMB5941B 1SMB5942B
82 87 91 100 110
1SMB5947B
120 130 150 160 180 200
1SMB5951B 1SMB5952B 1SMB5953B 1SMB5954B 1SMB5955B 1SMB5956B
1SMB5948B 1SMB5949B
BZG03C150
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ON Semiconductor Selector Guide − Discrete Devices
Dual Zeners − Duals in Surface Mount MMBZ15VDLT1 − Common Cathode Series Table 6. SOT−23 Dual Common Cathode Zener; 40 Watts Peak Power (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) BIDIRECTIONAL (Circuit tied to Pins 1 and 2) (VF = 0.9 V Max @ IF = 10 mA) Reverse Voltage Working Peak VRWM (V)
Breakdown Voltage VBR (Note 1) (V)
Device Min
Nom
@ IT (mA) Max
3
CASE 318−08 TO−236AB LOW PROFILE SOT−23
1
Max Reverse Surge Current IPP (A)
Max Reverse Leakage Current IR (nA)
Max Reverse Voltage @ IPP (Clamping Voltage) VC (V)
Maximum Temperature Coefficient of VBR (mV/°C)
1 3 2
2
MMBZ15VDL
14.3
15
15.8
1.0
12.8
100
1.9
21.2
12
27
28.35
1.0
22
50
1.0
38
26
(VF = 1.1 V Max @ IF = 200 mA) MMBZ27VCL
25.65
1. VBR measured at pulse test current IT at an ambient temperature of 25°C.
MMBZ5V6ALT1 − Common Anode Series Table 7. SOT−23 Dual Common Anode Zener; 24 Watts Peak Power (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) Breakdown Voltage Device
VBR (Note 2) (V) Min
Nom
@ IT (mA)
Max Reverse Leakage Current
IR @ VR (μA) (V)
Max Zener Impedance (Note 3)
ZZT @ IZT (Ω) (mA)
ZZK @ IZK (Ω) (mA)
Max
3
CASE 318−08 STYLE 12 LOW PROFILE SOT−23 PLASTIC
1 2
Max Max Reverse Reverse Voltage @ Surge IPP Current (Clamping IPP Voltage) (A) VC (V)
Max Temp Coefficient of VBR (mV/°C)
1 3 2
MMBZ5V6AL
5.32
5.6
5.88
20
5.0
3.0
11
1600
0.25
3.0
8.0
1.26
MMBZ6V2AL
5.89
6.2
6.51
1.0
0.5
3.0
−
−
−
2.76
8.7
2.80
MMBZ6V8AL
6.46
6.8
7.14
1.0
0.5
4.5
−
−
−
2.5
9.6
3.40
MMBZ9V1AL
8.65
9.1
9.56
1.0
0.3
6.0
−
−
−
1.7
14
7.50
2. VBR measured at pulse test current IT at an ambient temperature of 25°C. 3. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.
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ON Semiconductor Selector Guide − Discrete Devices
Dual Zeners − Duals in Surface Mount (continued) MMBZ5V6ALT1 − Common Anode Series Table 8. SOT−23 Dual Common Anode Zener; 40 Watts Peak Power (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3) (VF = 0.9 V Max @ IF = 10 mA) Breakdown Voltage VBR (Note 4) (V)
Device
Min
Nom
3
@ IT (mA) Max
Reverse Voltage Working Peak VRWM (Volts)
Max Reverse Leakage Current IR (nA)
CASE 318−08 STYLE 12 LOW PROFILE SOT−23 PLASTIC
1 2
Max Reverse Surge Current IPP (A)
Max Reverse Voltage @ IPP (Clamping Voltage) VC (V)
Maximum Temperature Coefficient of VBR (mV/°C)
1 3 2
MMBZ12VAL
11.40
12
12.60
1.0
8.5
200
2.35
17
7.50
MMBZ15VAL
14.25
15
15.75
1.0
12.0
50
1.9
21
12.30
MMBZ18VAL
17.10
18
18.90
1.0
14.5
50
1.6
25
15.30
MMBZ20VAL
19.00
20
21.00
1.0
17.0
50
1.4
28
17.20
MMBZ27VAL
25.65
27
28.35
1.0
22.0
50
1.0
40
24.30
MMBZ33VAL
31.35
33
34.65
1.0
26.0
50
0.87
46
30.40
4. VBR measured at pulse test current IT at an ambient temperature of 25°C.
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ON Semiconductor Selector Guide − Discrete Devices
TVS and ESD Protection Devices
In Brief . . . Page
Today’s electronic systems face EMI and ESD threats from a wide variety of sources. ON Semiconductor’s TVS and ESD Protection products provide superior protection from ESD and other transient voltages and are offered in a wide variety of configurations and packages. These products are characterized by low clamping voltage, fast response time, low leakage, and can withstand multiple transient voltage strikes without degradation. All of our products are designed to exceed the highest levels of ESD immunity per the IEC61000−4−2, Human Body Model, and Machine Model standards. The ESD protection family of devices takes advantage of ON Semiconductor’s world class micropackaging manufacturing technology to offer ESD protection in some of the smallest packages available today for portable applications where board space is at a premium. The TVS family of devices are rated using the 10 x 1000 msec exponential decay surge waveform and are available from 200 W to 1500 W. The Low Capacitance series is suitable for protecting high speed data lines such as USB2.0, Ethernet and DVI. ON Semiconductor’s deep portfolio of TVS and ESD protection products are used by industry leaders in automotive, wireless, computing and other high end markets to assure immunity from field failures due to ESD and other transient voltages.
TVS (Transient Voltage Suppressors) . . . . . . . . . . . . . Axial Leaded . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 Watt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 Watt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500 Watt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Surface Mount Packages . . . . . . . . . . . . . . . . . . . . . 200 Watt (POWERMITE®) . . . . . . . . . . . . . . . . . 200 Watt (SOD−123FL) . . . . . . . . . . . . . . . . . . . . 400 Watt (SMA) . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 Watt (SMB) . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500 Watt (SMC) . . . . . . . . . . . . . . . . . . . . . . . . . . TVS/ESD Protection . . . . . . . . . . . . . . . . . . . . . . . . . One Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Two Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Four Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Five Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Low Capacitance TVS/ESD Protection . . . . . . . . . . One Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Two Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Four Line . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Axial Leads Table 1. Peak Power Dissipation, 500 Watts @ 1 ms Surge (10 x 1000 ms) Case 59 − MiniMOSORBt IRSM IRSM 2 CASE 59 (MiniMOSORB™) PLASTIC Cathode = Polarity Band
0
1
2 3 4 5 6 Time (ms) Surge Current Characterisitcs
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 35 A Pulse (except bidirectional devices). Breakdown Voltage Working Peak Reverse Voltage VRWM (Volts) (Note 1)
Min (Note 2)
Max
@ IT Pulse (mA)
Maximum Reverse Leakage @ VRWM IR (μA)
VBR (Volts) Device
Maximum Reverse Surge Current IRSM (Amps) (Note 3)
Maximum Reverse Voltage @ IRSM (Clamping Voltage) VRSM (Volts)
5 6 7 7.5
SA5.0A SA6.0A SA7.0A SA7.5A
6.4 6.67 7.78 8.33
7 7.37 8.6 9.21
10 10 10 1
600 600 150 50
54.3 48.5 41.7 38.8
9.2 10.3 12 12.9
8 9 10
SA8.0A SA9.0A SA10A
8.89 10 11.1
9.83 11.1 12.3
1 1 1
25 1 1
36.7 32.5 29.4
13.6 15.4 17
11 12 13
SA11A SA12A SA13A
12.2 13.3 14.4
13.5 14.7 15.9
1 1 1
1 1 1
27.4 25.1 23.2
18.2 19.9 21.5
15 16 17 18
SA15A SA16A SA17A SA18A
16.7 17.8 18.9 20
18.5 19.7 20.9 22.1
1 1 1 1
1 1 1 1
20.6 19.2 18.1 17.2
24.4 26 27.6 29.2
20 24 26 28
SA20A SA24A SA26A SA28A
22.2 26.7 28.9 31.1
24.5 29.5 31.9 34.4
1 1 1 1
1 1 1 1
15.4 12.8 11.9 11
32.4 38.9 42.1 45.4
30 33 36 40
SA30A SA33A SA36A SA40A
33.3 36.7 40 44.4
36.8 40.6 44.2 49.1
1 1 1 1
1 1 1 1
10.3 9.4 8.6 7.8
48.4 53.3 58.1 64.5
43 45 48 51
SA43A SA45A SA48A SA51A
47.8 50 53.3 56.7
52.8 55.3 58.9 62.7
1 1 1 1
1 1 1 1
7.2 6.9 6.5 6.1
69.4 72.7 77.4 82.4
58 60 64 170
SA58A SA60A SA64A SA170A
64.4 66.7 71.1 189
71.2 73.7 78.6 209
1 1 1 1
1 1 1 1
5.3 5.2 4.9 1.8
93.6 96.8 103 275
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Axial Leads (continued) Table 2. Peak Power Dissipation, 600 Watts @ 1 ms Surge (10 x 1000 ms) Case 17 − Surmetic 40 IRSM IRSM 2 0
2 3 4 5 6 Time (ms) Surge Current Characterisitcs
CASE 17 PLASTIC Cathode = Polarity Band
1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 50 A Pulse (except bidirectional devices). Breakdown Voltage (Note 2) VBR (Volts)
Working Peak Reverse Voltage VRWM (Volts) (Note 1)
Maximum Reverse Leakage @ VRWM IR (μA)
Maximum Reverse Surge Current IRSM (Amps) (Note 3)
Maximum Reverse Voltage @ IRSM (Clamping Voltage) VRSM (Volts)
Nom
@ IT Pulse (mA)
6.8 7.5 9.1
10 10 1
P6KE6.8A P6KE7.5A P6KE9.1A
5.8 6.4 7.78
1000 500 50
57 53 45
10.5 11.3 13.4
10 11 12 13
1 1 1 1
P6KE10A P6KE11A P6KE12A P6KE13A
8.55 9.4 10.2 11.1
10 5 5 5
41 38 36 33
14.5 15.6 16.7 18.2
15 16 18 20
1 1 1 1
P6KE15A P6KE16A P6KE18A P6KE20A
12.8 13.6 15.3 17.1
5 5 5 5
28 27 24 22
21.2 22.5 25.2 27.7
22 24 27 30
1 1 1 1
P6KE22A P6KE24A P6KE27A P6KE30A
18.8 20.5 23.1 25.6
5 5 5 5
20 18 16 14.4
30.6 33.2 37.5 41.4
33 36 39 43
1 1 1 1
P6KE33A P6KE36A P6KE39A P6KE43A
28.2 30.8 33.3 36.8
5 5 5 5
13.2 12 11.2 10.1
45.7 49.9 53.9 59.3
47 51 56 62
1 1 1 1
P6KE47A P6KE51A P6KE56A P6KE62A
40.2 43.6 47.8 53
5 5 5 5
9.3 8.6 7.8 7.1
64.8 70.1 77 85
68 75 82 100
1 1 1 1
P6KE68A P6KE75A P6KE82A P6KE100A
58.1 64.1 70.1 85.5
5 5 5 5
6.5 5.8 5.3 4.4
92 103 113 137
150 160 180 200
1 1 1 1
P6KE150A P6KE160A P6KE180A P6KE200A
128 136 154 171
5 5 5 5
2.9 2.7 2.4 2.2
207 219 246 274
Device
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Axial Leads (continued) Table 3. Peak Power Dissipation, 1500 Watts @ 1 ms Surge (10 x 1000 ms) Case 41A − MOSORBt IRSM IRSM 2 0
CASE 41A PLASTIC Cathode = Polarity Band
1
2
3
4
5
6
Time (ms) Surge Current Characterisitcs
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 100 A Pulse) ELECTRICAL CHARACTERISTICS (C suffix denotes standard back to back bidirectional versions. Test both polarities) Clamping Voltage Max Reverse StandOff Voltage VRWM (Volts) (Note 1)
JEDEC Device
5 5 8 12
1N5908 1N6373 1N6374 1N6376
15 18 22 36
1N6377
Breakdown Voltage
1N6379 1N6380
Device ICTE-5/MPTE-5 ICTE-12/MPTE-12 ICTE-15/MPTE-15 ICTE-18/MPTE-18 ICTE-36
Maximum Reverse Surge Current IRSM (Volts) (Note 3)
Maximum Reverse Voltage @ IRSM (Clamping Voltage) VRSM (Volts)
Peak Pulse Current @ Ipp1 = 1 A VC1 (Volts max)
Peak Pulse Current @ Ipp2 = 10 A VC2 (Volts max)
VBR Volts Min (Note 2)
@ IT Pulse (mA)
Maximum Reverse Leakage @ VRWM IR (μA)
6 6 9.4 14.1
1 1 1 1
300 300 25 2
120 160 100 70
8.5 9.4 15 21.2
7.6 @ 30 A 7.1 11.3 16.1
8 @ 60 A 7.5 11.5 16.5
17.6 21.2 25.9 42.4
1 1 1 1
2 2 2 2
60 50 40 23
25 30 37.5 65.2
20.1 24.2 29.8 50.6
20.6 25.2 32 54.3
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Axial Leads (continued) Table 4. Peak Power Dissipation, 1500 Watts @ 1 ms Surge (10 x 1000 ms) Case 41A − MOSORB IRSM IRSM 2 0
CASE 41A PLASTIC Cathode = Polarity Band
1
2
3
4
5
6
Time (ms) Surge Current Characterisitcs
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 100 A Pulse Breakdown Voltage (Note 2) VBR Volts
Working Peak Reverse Voltage VRWM (Volts) (Note 1)
Maximum Reverse Leakage @ VRWM IR (μA)
Maximum Reverse Surge Current IRSM (Amps) (Note 3)
Maximum Reverse Voltage @ IRSM (Clamping Voltage) VRSM (Volts)
Nom
@ IT Pulse (mA)
6.8 8.2
10 10
1N6267A 1N6269A
1.5KE6.8A 1.5KE8.2A
5.8 7.02
1000 200
143 124
10.5 12.1
10 11 12 13
1 1 1 1
1N6271A 1N6272A 1N6273A 1N6274A
1.5KE10A 1.5KE11A 1.5KE12A 1.5KE13A
8.55 9.4 10.2 11.1
10 5 5 5
103 96 90 82
14.5 15.6 16.7 18.2
15 16 18 20
1 1 1 1
1N6275A 1N6276A 1N6277A 1N6278A
1.5KE15A 1.5KE16A 1.5KE18A 1.5KE20A
12.8 13.6 15.3 17.1
5 5 5 5
71 67 59.5 54
21.2 22.5 25.2 27.7
22 24 27 30
1 1 1 1
1N6279A 1N6280A 1N6281A 1N6282A
1.5KE22A 1.5KE24A 1.5KE27A 1.5KE30A
18.8 20.5 23.1 25.6
5 5 5 5
49 45 40 36
30.6 33.2 37.5 41.4
33 36 39 43
1 1 1 1
1N6283A 1N6284A 1N6285A 1N6286A
1.5KE33A 1.5KE36A 1.5KE39A 1.5KE43A
28.2 30.8 33.3 36.8
5 5 5 5
33 30 28 25.3
45.7 49.9 53.9 59.3
47 51 56 62
1 1 1 1
1N6287A 1N6288A 1N6289A 1N6290A
1.5KE47A 1.5KE51A 1.5KE56A 1.5KE62A
40.2 43.6 47.8 53
5 5 5 5
23.2 21.4 19.5 17.7
64.8 70.1 77 85
68 75 82 91
1 1 1 1
1N6291A 1N6292A 1N6293A 1N6294A
1.5KE68A 1.5KE75A 1.5KE82A 1.5KE91A
58.1 64.1 70.1 77.8
5 5 5 5
16.3 14.6 13.3 12
92 103 113 125
100 120 130
1 1 1
1N6295A 1N6297A 1N6298A
1.5KE100A 1.5KE120A 1.5KE130A
85.5 102 111
5 5 5
11 9.1 8.4
137 165 179
JEDEC Device
Device
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Axial Leads (continued) Table 4. Peak Power Dissipation, 1500 Watts @ 1 ms Surge (10 x 1000 ms) Case 41A − MOSORB (continued) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 100 A Pulse Breakdown Voltage (Note 2) VBR Volts Nom
@ IT Pulse (mA)
150 160 170 180 200 220 250
1 1 1 1 1 1 1
JEDEC Device 1N6299A 1N6300A 1N6301A 1N6302A 1N6303A
Device
Working Peak Reverse Voltage VRWM (Volts) (Note 1) 128 136 145 154 171 185 214
1.5KE150A 1.5KE160A 1.5KE170A 1.5KE180A 1.5KE200A 1.5KE220A 1.5KE250A
Maximum Reverse Leakage @ VRWM IR (μA)
Maximum Reverse Surge Current IRSM (Amps) (Note 3)
Maximum Reverse Voltage @ IRSM (Clamping Voltage) VRSM (Volts)
5 5 5 5 5 5 5
7.2 6.8 6.4 6.1 5.5 4.6 5
207 219 234 246 274 328 344
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount Table 5. 1PMT Series Unidirectional Overvoltage Transient Suppressors, 200 Watts Peak Power @ 1 ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TL = 30_C unless otherwise noted) (VF = 1.25 Volts @ 200 mA) VRWM (V) Device
Marking
(Note 1)
VBR @ IT (V) (Note 2) Min
Nom
Max
IT
IR @ VRWM
VC @ IPP
IPP (A)
(mA)
(μA)
(V)
(Note 3)
IRSM IRSM POWERMITE) CASE 457 PLASTIC
2 0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs 1PMT5.0A 1PMT7.0A 1PMT12A 1PMT16A
MKE MKM MLE MLP
5.0 7.0 12 16
6.4 7.78 13.3 17.8
6.7 8.2 14 18.75
7.0 8.6 14.7 19.7
10 10 1.0 1.0
800 500 5.0 5.0
9.2 12 19.9 26
19 14.6 8.8 7.0
1PMT18A 1PMT22A 1PMT24A 1PMT26A
MLT MLX MLZ MME
18 22 24 26
20 24.4 26.7 28.9
21 25.6 28.1 30.4
22.1 26.9 29.5 31.9
1.0 1.0 1.0 1.0
5.0 5.0 5.0 5.0
29.2 35.5 38.9 42.1
6.0 4.9 4.5 4.2
1PMT28A 1PMT30A 1PMT33A 1PMT36A
MMG MMK MMM MMP
28 30 33 36
31.1 33.3 36.7 40
32.8 35.1 38.7 42.1
34.4 36.8 40.6 44.2
1.0 1.0 1.0 1.0
5.0 5.0 5.0 5.0
45.4 48.4 53.3 58.1
3.9 3.6 3.3 3.0
1PMT40A
MMR
40
44.4
46.8
49.1
1.0
5.0
64.5
2.7
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 6. SMF Series Unidirectional Overvoltage Transient Suppressors, 200 Watts Peak Power @ 1 ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TL = 30_C unless otherwise noted) (VF = 1.25 Volts @ 200 mA) VRWM (V) Device
Marking
(Note 1)
VBR @ IT (V) (Note 2) Min
Nom
Max
IT
IR @ VRWM
VC @ IPP
IPP (A)
(mA)
(μA)
(V)
(Note 3)
IRSM IRSM SOD−123FL CASE 498 PLASTIC
2 0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs SMF5.0A SMF6.0A SMF6.5A SMF7.0A
KE KG KK KM
5.0 6.0 6.5 7.0
6.4 6.67 7.22 7.78
6.7 7.02 7.6 8.2
7.0 7.37 7.98 8.6
10 10 10 10
400 400 250 100
9.2 10.3 11.2 12
16.3 14.6 13.4 12.5
SMF7.5A SMF8.0A SMF8.5A SMF9.0A
KP KR KT KV
7.5 8.0 8.5 9.0
8.33 8.89 9.44 10
8.77 9.36 9.92 10.55
9.21 9.83 10.4 11.1
1.0 1.0 1.0 1.0
50 25 10 5.0
12.9 13.6 14.4 15.4
11.6 11 10.4 9.7
SMF10A SMF11A SMF12A SMF13A
KX KZ LE LG
10 11 12 13
11.1 12.2 13.3 14.4
11.7 12.85 14 15.15
12.3 13.5 14.7 15.9
1.0 1.0 1.0 1.0
2.5 2.5 2.5 1.0
17 18.2 19.9 21.5
8.8 8.2 7.5 7.0
SMF14A SMF15A SMF16A
LK LM LP
14 15 16
15.6 16.7 17.8
16.4 17.6 18.75
17.2 18.5 19.7
1.0 1.0 1.0
1.0 1.0 1.0
23.2 24.4 26
6.5 6.1 5.8
SMF17A SMF18A SMF20A SMF22A
LR LT LV LX
17 18 20 22
18.9 20 22.2 24.4
19.9 21 23.35 25.6
20.9 22.1 24.5 26.9
1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0
27.6 29.2 32.4 35.5
5.4 5.1 4.6 4.2
SMF24A SMF26A SMF28A SMF30A
LZ ME MG MK
24 26 28 30
26.7 28.9 31.1 33.3
28.1 30.4 32.8 35.1
29.5 31.9 34.4 36.8
1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0
38.9 42.1 45.4 48.4
3.9 3.6 3.3 3.1
SMF33A SMF36A SMF40A SMF43A
MM MP MR MT
33 36 40 43
36.7 40 44.4 47.8
38.7 42.1 46.8 50.3
40.6 44.2 49.1 52.8
1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0
53.3 58.1 64.5 69.4
2.8 2.6 2.3 2.2
SMF45A SMF48A SMF51A SMF54A
MV MX MZ NE
45 48 51 54
50 53.3 56.7 60
52.65 56.1 59.7 63.15
55.3 58.9 62.7 66.3
1.0 1.0 1.0 1.0
1.0 1.0 1.0 1.0
72.7 77.4 82.4 87.1
2.1 1.9 1.8 1.7
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 7. 1SMA Series Unidirectional Overvoltage Transient Suppressors; 400 Watts Peak Power @ 1 ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25_C unless otherwise noted) (VF = 3.5 Volts @ IF = 40 A for all types) (Note 4)
Device
Working Peak Reverse Voltage VRWM (Volts) (Note 1)
Breakdown Voltage VBR Volts (Min) (Note 2)
IT mA
Maximum Reverse Voltage @ IRSM (Clamping Voltage) VC (Volts)
Maximum Reverse Surge Current IPP (Amps) (Note 3)
Maximum Reverse Leakage @ VRWM IR (μA)
Device Marking
IRSM IRSM 2
SMA CASE 403B PLASTIC
0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs 1SMA5.0A 1SMA6.0A 1SMA6.5A 1SMA7.0A
5.0 6.0 6.5 7.0
6.4 6.67 7.22 7.78
10 10 10 10
9.2 10.3 11.2 12.0
43.5 38.8 35.7 33.3
400 400 250 250
QE QG QK QM
1SMA7.5A 1SMA8.0A 1SMA8.5A 1SMA9.0A
7.5 8.0 8.5 9.0
8.33 8.89 9.44 10
1 1 1 1
12.9 13.6 14.4 15.4
31.0 29.4 27.8 26.0
50 25 5.0 2.5
QP QR QT QV
1SMA10A 1SMA11A 1SMA12A 1SMA13A
10 11 12 13
11.1 12.2 13.3 14.4
1 1 1 1
17.0 18.2 19.9 21.5
23.5 22.0 20.1 18.6
2.5 2.5 2.5 2.5
QX QZ RE RG
1SMA15A 1SMA16A 1SMA17A 1SMA18A
15 16 17 18
16.7 17.8 18.9 20
1 1 1 1
24.4 26.0 27.6 29.2
16.4 15.4 14.5 13.7
2.5 2.5 2.5 2.5
RM RP RR RT
1SMA20A 1SMA22A 1SMA24A 1SMA26A
20 22 24 26
22.2 24.4 26.7 28.9
1 1 1 1
32.4 35.5 38.9 42.1
12.3 11.3 10.3 9.5
2.5 2.5 2.5 2.5
RV RX RZ SE
1SMA28A 1SMA30A 1SMA33A 1SMA36A
28 30 33 36
31.1 33.3 36.7 40
1 1 1 1
45.4 48.4 53.3 58.1
8.8 8.3 7.5 6.9
2.5 2.5 2.5 2.5
SG SK SM SP
1SMA40A 1SMA43A 1SMA45A 1SMA48A
40 43 45 48
44.4 47.8 50 53.3
1 1 1 1
64.5 69.4 72.2 77.4
6.2 5.8 5.5 5.2
2.5 2.5 2.5 2.5
SR ST SV SX
1SMA51A 1SMA54A 1SMA58A 1SMA64A
51 54 58 64
56.7 60 64.4 71.1
1 1 1 1
82.4 87.1 93.6 103.0
4.9 4.6 4.8 3.9
2.5 2.5 2.5 2.5
SZ TE TG TM
1SMA70A 1SMA75A
70 75
77.8 83.3
1 1
113.0 121.0
3.5 3.3
2.5 2.5
TP TR
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform. 4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 8. 1SMA Series Bidirectional Zener Overvoltage Transient Suppressors; 400 Watts Peak Power @ 1 ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25_C unless otherwise noted)
Device
Working Peak Reverse Voltage VRWM (Volts) (Note 1)
Breakdown Voltage VBR Volts (Min) (Note 2)
IT mA
Maximum Reverse Voltage @ IRSM (Clamping Voltage) VC (Volts)
Maximum Reverse Surge Current IPP (Amps) (Note 3)
Maximum Reverse Leakage @ VRWM IR (μA)
Device Marking
IRSM IRSM SMA CASE 403B PLASTIC
2 0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs 1SMA10CA 1SMA11CA 1SMA12CA 1SMA13CA
10 11 12 13
11.1 12.2 13.3 14.4
1 1 1 1
17.0 18.2 19.9 21.5
23.5 22.0 20.1 18.6
2.5 2.5 2.5 2.5
QXC QZC REC RGC
1SMA14CA 1SMA15CA 1SMA16CA 1SMA18CA
14 15 16 18
15.6 16.7 17.8 20
1 1 1 1
23.2 24.4 26.0 29.2
17.2 16.4 15.4 13.7
2.5 2.5 2.5 2.5
RKC RMC RPC RTC
1SMA20CA 1SMA22CA 1SMA24CA 1SMA26CA
20 22 24 26
22.2 24.4 26.7 28.9
1 1 1 1
32.4 35.5 38.9 42.1
12.3 11.3 10.3 9.5
2.5 2.5 2.5 2.5
RVC RXC RZC SEC
1SMA28CA 1SMA30CA 1SMA33CA 1SMA36CA
28 30 33 36
31.1 33.3 36.7 40
1 1 1 1
45.4 48.4 53.3 58.1
8.8 8.3 7.5 6.9
2.5 2.5 2.5 2.5
SGC SKC SMC SPC
1SMA40CA 1SMA43CA 1SMA48CA 1SMA51CA
40 43 48 51
44.4 47.8 53.3 56.7
1 1 1 1
64.5 69.4 77.4 82.4
6.2 5.8 5.2 4.9
2.5 2.5 2.5 2.5
SRC STC SXC SZC
1SMA54CA 1SMA58CA 1SMA60CA 1SMA64CA
54 58 60 64
60 64.4 66.7 71.1
1 1 1 1
87.1 93.6 96.8 103.0
4.6 4.3 4.1 3.9
2.5 2.5 2.5 2.5
TEC TGC TKC TMC
1SMA70CA 1SMA78CA
70 78
77.8 86.7
1 1
113.0 126.0
3.5 3.2
2.5 2.5
TPC TSC
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 9. 1SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power @ 1ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (VF = 3.5 V Max @ IF = 30 A) (Note 4)
Device
Working Peak Reverse Voltage VRWM Volts (Note 1)
Maximum Clamping Voltage VC @ Ipp Volts
Breakdown Voltage VBR @ IT Volts (Min) (Note 2)
mA
Peak Pulse Current Ipp Amps (Note 3)
Maximum Reverse Leakage @ VR IR μA
1 2
6
Device Marking
IRSM IRSM 2
SMB CASE 403A PLASTIC
0
3
4
5
Time (ms) Surge Current Characterisitcs 1SMB5.0A 1SMB6.0A 1SMB6.5A 1SMB7.0A
5.0 6.0 6.5 7.0
6.40 6.67 7.22 7.78
10 10 10 10
9.2 10.3 11.2 12.0
65.2 58.3 53.6 50.0
800 800 500 200
KE KG KK KM
1SMB7.5A 1SMB8.0A 1SMB8.5A 1SMB9.0A
7.5 8.0 8.5 9.0
8.33 8.89 9.44 10.0
1.0 1.0 1.0 1.0
12.9 13.6 14.4 15.4
46.5 44.1 41.7 39.0
100 50 10 5.0
KP KR KT KV
1SMB10A 1SMB11A 1SMB12A 1SMB13A
10 11 12 13
11.1 12.2 13.3 14.4
1.0 1.0 1.0 1.0
17.0 18.2 19.9 21.5
35.3 33.0 30.2 27.9
5.0 5.0 5.0 5.0
KX KZ LE LG
1SMB14A 1SMB15A 1SMB16A 1SMB17A
14 15 16 17
15.6 16.7 17.8 18.9
1.0 1.0 1.0 1.0
23.2 24.4 26.0 27.6
25.8 24.0 23.1 21.7
5.0 5.0 5.0 5.0
LK LM LP LR
1SMB18A 1SMB20A 1SMB22A 1SMB24A
18 20 22 24
20.0 22.2 24.4 26.7
1.0 1.0 1.0 1.0
29.2 32.4 35.5 38.9
20.5 18.5 16.9 15.4
5.0 5.0 5.0 5.0
LT LV LX LZ
1SMB26A 1SMB28A 1SMB30A 1SMB33A
26 28 30 33
28.9 31.1 33.3 36.7
1.0 1.0 1.0 1.0
42.1 45.4 48.4 53.3
14.2 13.2 12.4 11.3
5.0 5.0 5.0 5.0
ME MG MK MM
1SMB36A 1SMB40A 1SMB43A 1SMB45A
36 40 43 45
40.0 44.4 47.8 50.0
1.0 1.0 1.0 1.0
58.1 64.5 69.4 72.7
10.3 9.3 8.6 8.3
5.0 5.0 5.0 5.0
MP MR MT MV
1SMB48A 1SMB51A 1SMB54A 1SMB58A
48 51 54 58
53.3 56.7 60.0 64.4
1.0 1.0 1.0 1.0
77.4 82.4 87.1 93.6
7.7 7.3 6.9 6.4
5.0 5.0 5.0 5.0
MX MZ NE NG
1SMB60A 1SMB64A 1SMB70A 1SMB75A
60 64 70 75
66.7 71.1 77.8 83.3
1.0 1.0 1.0 1.0
96.8 103 113 121
6.2 5.8 5.3 4.9
5.0 5.0 5.0 5.0
NK NM NP NR
1SMB85A 1SMB90A 1SMB100A
85 90 100
94.4 100 111
1.0 1.0 1.0
137 146 162
4.4 4.1 3.7
5.0 5.0 5.0
NV NX NZ
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform. 4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute. Devices listed in bold, italic are ON Semiconductor preferred devices.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 9. 1SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power @ 1ms Surge (10 x 1000 ms) (continued) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (VF = 3.5 V Max @ IF = 30 A) (Note 4)
Device
Working Peak Reverse Voltage VRWM Volts (Note 1)
Maximum Clamping Voltage VC @ Ipp Volts
Breakdown Voltage VBR @ IT Volts (Min) (Note 2)
mA
Peak Pulse Current Ipp Amps (Note 3)
Maximum Reverse Leakage @ VR IR μA
1 2
6
Device Marking
IRSM IRSM 2
SMB CASE 403A PLASTIC
0
3
4
5
Time (ms) Surge Current Characterisitcs 1SMB110A 1SMB120A 1SMB130A 1SMB150A
110 120 130 150
122 133 144 167
1.0 1.0 1.0 1.0
177 193 209 243
3.4 3.1 2.9 2.5
5.0 5.0 5.0 5.0
PE PG PK PM
1SMB160A 1SMB170A
160 170
178 189
1.0 1.0
259 275
2.3 2.2
5.0 5.0
PP PR
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform. 4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 10. 1SMB Series Bidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power @ 1ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted).
Device
Working Peak Reverse Voltage VRWM Volts (Note 1)
Maximum Clamping Voltage VC @ Ipp Volts
Breakdown Voltage VBR @ IT Volts (Min) (Note 2)
mA
Peak Pulse Current Ipp Amps (Note 3)
Maximum Reverse Leakage @ VR Device IR Marking μA
IRSM IRSM 2
SMB CASE 403A PLASTIC
0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs 1SMB10CA 1SMB11CA 1SMB12CA 1SMB13CA
10 11 12 13
11.1 12.2 13.3 14.4
1.0 1.0 1.0 1.0
17.0 18.2 19.9 21.5
35.3 33.0 30.2 27.9
5.0 5.0 5.0 5.0
KXC KZC LEC LGC
1SMB14CA 1SMB15CA 1SMB16CA 1SMB17CA
14 15 16 17
15.6 16.7 17.8 18.9
1.0 1.0 1.0 1.0
23.2 24.4 26.0 27.6
25.8 24.0 23.1 21.7
5.0 5.0 5.0 5.0
LKC LMC LPC LRC
1SMB18CA 1SMB20CA 1SMB22CA 1SMB24CA
18 20 22 24
20.0 22.2 24.4 26.7
1.0 1.0 1.0 1.0
29.2 32.4 35.5 38.9
20.5 18.5 16.9 15.4
5.0 5.0 5.0 5.0
LTC LVC LXC LZC
1SMB26CA 1SMB28CA 1SMB30CA 1SMB33CA
26 28 30 33
28.9 31.1 33.3 36.7
1.0 1.0 1.0 1.0
42.1 45.4 48.4 53.3
14.2 13.2 12.4 11.3
5.0 5.0 5.0 5.0
MEC MGC MKC MMC
1SMB36CA 1SMB40CA 1SMB43CA 1SMB45CA
36 40 43 45
40.0 44.4 47.8 50.0
1.0 1.0 1.0 1.0
58.1 64.5 69.4 72.7
10.3 9.3 8.6 8.3
5.0 5.0 5.0 5.0
MPC MRC MTC MVC
1SMB48CA 1SMB51CA 1SMB54CA 1SMB58CA
48 51 54 58
53.3 56.7 60.0 64.4
1.0 1.0 1.0 1.0
77.4 82.4 87.1 93.6
7.7 7.3 6.9 6.4
5.0 5.0 5.0 5.0
MXC MZC NEC NGC
1SMB60CA 1SMB64CA 1SMB75CA
60 64 75
66.7 71.1 83.3
1.0 1.0 1.0
96.8 103 121
6.2 5.8 4.9
5.0 5.0 5.0
NKC NMC NRC
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform. Devices listed in bold, italic are ON Semiconductor preferred devices.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 11. P6SMB Series Unidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power @ 1 ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (VF = 3.5 V Max, IF = 50 A for all types) (Note 4) Breakdown Voltage VBR @ IT Volts (Note 2) Device
Min
Nom
Max
mA
Working Peak Reverse Voltage VRWM Volts (Note 1)
Maximum Reverse Leakage @ VRWM IR μA
Maximum Reverse Surge Current IPP Amps (Note 3)
Maximum Reverse Voltage @ IPP (Clamping Voltage) VC Volts
Maximum Temperature Coefficient of VBR %/°C
Device Marking
IRSM IRSM 2
SMB CASE 403A PLASTIC
0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs P6SMB6.8A P6SMB7.5A P6SMB8.2A P6SMB9.1A
6.45 7.13 7.79 8.65
6.8 7.5 8.2 9.1
7.14 7.88 8.61 9.55
10 10 10 1
5.8 6.4 7.02 7.78
1000 500 200 50
57 53 50 45
10.5 11.3 12.1 13.4
0.057 0.061 0.065 0.068
6V8A 7V5A 8V2A 9V1A
P6SMB10A P6SMB11A P6SMB12A P6SMB13A
9.5 10.5 11.4 12.4
10 11 12 13
10.5 11.6 12.6 13.7
1 1 1 1
8.55 9.4 10.2 11.1
10 5 5 5
41 38 36 33
14.5 15.6 16.7 18.2
0.073 0.075 0.078 0.081
10A 11A 12A 13A
P6SMB15A P6SMB16A P6SMB18A P6SMB20A
14.3 15.2 17.1 19
15 16 18 20
15.8 16.8 18.9 21
1 1 1 1
12.8 13.6 15.3 17.1
5 5 5 5
28 27 24 22
21.2 22.5 25.2 27.7
0.084 0.086 0.088 0.09
15A 16A 18A 20A
P6SMB22A P6SMB24A P6SMB27A P6SMB30A
20.9 22.8 25.7 28.5
22 24 27 30
23.1 25.2 28.4 31.5
1 1 1 1
18.8 20.5 23.1 25.6
5 5 5 5
20 18 16 14.4
30.6 33.2 37.5 41.4
0.092 0.094 0.096 0.097
22A 24A 27A 30A
P6SMB33A P6SMB36A P6SMB39A P6SMB43A
31.4 34.2 37.1 40.9
33 36 39 43
34.7 37.8 41 45.2
1 1 1 1
28.2 30.8 33.3 36.8
5 5 5 5
13.2 12 11.2 10.1
45.7 49.9 53.9 59.3
0.098 0.099 0.1 0.101
33A 36A 39A 43A
P6SMB47A P6SMB51A P6SMB56A P6SMB62A
44.7 48.5 53.2 58.9
47 51 56 62
49.4 53.6 58.8 65.1
1 1 1 1
40.2 43.6 47.8 53
5 5 5 5
9.3 8.6 7.8 7.1
64.8 70.1 77 85
0.101 0.102 0.103 0.104
47A 51A 56A 62A
P6SMB68A P6SMB75A P6SMB82A P6SMB91A
64.6 71.3 77.9 86.5
68 75 82 91
71.4 78.8 86.1 95.5
1 1 1 1
58.1 64.1 70.1 77.8
5 5 5 5
6.5 5.8 5.3 4.8
92 103 113 125
0.104 0.105 0.105 0.106
68A 75A 82A 91A
P6SMB100A P6SMB110A P6SMB120A P6SMB130A
95 105 114 124
100 110 120 130
105 116 126 137
1 1 1 1
85.5 94 102 111
5 5 5 5
4.4 4 3.6 3.3
137 152 165 179
0.106 0.107 0.107 0.107
100A 110A 120A 130A
P6SMB150A P6SMB160A P6SMB180A P6SMB200A
143 152 171 190
150 160 180 200
158 168 189 210
1 1 1 1
128 136 154 171
5 5 5 5
2.9 2.7 2.4 2.2
207 219 246 274
0.108 0.108 0.108 0.108
150A 160A 180A 200A
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform. 4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute. Devices listed in bold, italic are ON Semiconductor preferred devices.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 12. P6SMB Series Bidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power @ 1 ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Breakdown Voltage VBR @ IT Volts (Note 2) Device
Min
Nom
Max
mA
Working Peak Reverse Voltage VRWM Volts (Note 1)
Maximum Reverse Surge Current IPP Amps (Note 3)
Maximum Reverse Leakage @ VRWM IR μA
Maximum Reverse Voltage @ IPP (Clamping Voltage) VC Volts
Maximum Temperature Coefficient of VBR %/°C
Device Marking
IRSM IRSM 2
SMB CASE 403A PLASTIC
0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs P6SMB11CA P6SMB12CA P6SMB13CA
10.5 11.4 12.4
11 12 13
11.6 12.6 13.7
1 1 1
9.4 10.2 11.1
5 5 5
38 36 33
15.6 16.7 18.2
0.075 0.078 0.081
11C 12C 13C
P6SMB15CA P6SMB16CA P6SMB18CA P6SMB20CA
14.3 15.2 17.1 19
15 16 18 20
15.8 16.8 18.9 21
1 1 1 1
12.8 13.6 15.3 17.1
5 5 5 5
28 27 24 22
21.2 22.5 25.2 27.7
0.084 0.086 0.088 0.09
15C 16C 18C 20C
P6SMB22CA P6SMB24CA P6SMB27CA P6SMB30CA
20.9 22.8 25.7 28.5
22 24 27 30
23.1 25.2 28.4 31.5
1 1 1 1
18.8 20.5 23.1 25.6
5 5 5 5
20 18 16 14.4
30.6 33.2 37.5 41.4
0.092 0.094 0.096 0.097
22C 24C 27C 30C
P6SMB33CA P6SMB36CA P6SMB39CA P6SMB43CA
31.4 34.2 37.1 40.9
33 36 39 43
34.7 37.8 41 45.2
1 1 1 1
28.2 30.8 33.3 36.8
5 5 5 5
13.2 12 11.2 10.1
45.7 49.9 53.9 59.3
0.098 0.099 0.1 0.101
33C 36C 39C 43C
P6SMB47CA P6SMB51CA P6SMB56CA P6SMB62CA
44.7 48.5 53.2 58.9
47 51 56 62
49.4 53.6 58.8 65.1
1 1 1 1
40.2 43.6 47.8 53
5 5 5 5
9.3 8.6 7.8 7.1
64.8 70.1 77 85
0.101 0.102 0.103 0.104
47C 51C 56C 62C
P6SMB68CA P6SMB75CA P6SMB82CA P6SMB91CA
64.6 71.3 77.9 86.5
68 75 82 91
71.4 78.8 86.1 95.5
1 1 1 1
58.1 64.1 70.1 77.8
5 5 5 5
6.5 5.8 5.3 4.8
92 103 113 125
0.104 0.105 0.105 0.106
68C 75C 82C 91C
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform. Devices listed in bold, italic are ON Semiconductor preferred devices.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 13. SMBJ12AON Series Bidirectional Overvoltage Transient Suppressors; 600 Watts Peak Power @ 1 ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Working Peak Reverse Voltage VRWM Volts (Note 1)
Breakdown Voltage VBR @ IT Volts (Note 2) Device
Min
Nom
Max
mA
Maximum Reverse Leakage @ VRWM IR μA
Maximum Reverse Surge Current IPP Amps (Note 3)
Maximum Reverse Voltage @ IPP (Clamping Voltage) VC Volts
17.5
15.6
IRSM IRSM 2
SMB CASE 403A PLASTIC
0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs SMBJ12AON
13.2
13.75
14.3
1
12
5
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 14. 1SMC Series Unidirectional Overvoltage Transient Suppressors; 1500 Watts Peak Power @ 1 ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (VF = 3.5 V Max @ IF = 100 A) (Note 4)
Device
Working Peak Reverse Voltage VR Volts (Note 1)
Breakdown Voltage
Maximum Clamping Voltage VC @ Ipp Volts
VBR @ IT Volts (Min) (Note 2)
mA
Peak Pulse Current Ipp Amps (Note 3)
Maximum Reverse Leakage @ VR IR μA
Device Marking
IRSM IRSM 2
SMC CASE 403B PLASTIC
0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs 1SMC5.0A 1SMC6.0A 1SMC6.5A 1SMC7.0A
5.0 6.0 6.5 7.0
6.40 6.67 7.22 7.78
10 10 10 10
9.2 10.3 11.2 12.0
163.0 145.6 133.9 125.0
1000 1000 500 200
GDE GDG GDK GDM
1SMC7.5A 1SMC8.0A 1SMC8.5A 1SMC9.0A
7.5 8.0 8.5 9.0
8.33 8.89 9.44 10.0
1.0 1.0 1.0 1.0
12.9 13.6 14.4 15.4
116.3 110.3 104.2 97.4
100 50 20 10
GDP GDR GDT GDV
1SMC10A 1SMC12A 1SMC13A
10 12 13
11.1 13.3 14.4
1.0 1.0 1.0
17.0 19.9 21.5
88.2 75.3 69.7
5.0 5.0 5.0
GDX GEE GEG
1SMC14A 1SMC15A 1SMC16A 1SMC17A
14 15 16 17
15.6 16.7 17.8 18.9
1.0 1.0 1.0 1.0
23.2 24.4 26.0 27.6
64.7 61.5 57.7 53.3
5.0 5.0 5.0 5.0
GEK GEM GEP GER
1SMC18A 1SMC20A 1SMC22A 1SMC24A
18 20 22 24
20.0 22.2 24.4 26.7
1.0 1.0 1.0 1.0
29.2 32.4 35.5 38.9
51.4 46.3 42.2 38.6
5.0 5.0 5.0 5.0
GET GEV GEX GEZ
1SMC26A 1SMC28A 1SMC30A 1SMC33A
26 28 30 33
28.9 31.1 33.3 36.7
1.0 1.0 1.0 1.0
42.1 45.4 48.4 53.3
35.6 33.0 31.0 28.1
5.0 5.0 5.0 5.0
GFE GFG GFK GFM
1SMC36A 1SMC40A 1SMC43A 1SMC45A
36 40 43 45
40.0 44.4 47.8 50.0
1.0 1.0 1.0 1.0
58.1 64.5 69.4 72.7
25.8 23.2 21.6 20.6
5.0 5.0 5.0 5.0
GFP GFR GFT GFV
1SMC48A 1SMC51A 1SMC54A 1SMC58A
48 51 54 58
53.3 56.7 60.0 64.4
1.0 1.0 1.0 1.0
77.4 82.4 87.1 93.6
19.4 18.2 17.2 16.0
5.0 5.0 5.0 5.0
GFX GFZ GGE GGG
1SMC60A 1SMC64A 1SMC70A 1SMC75A
60 64 70 75
66.7 71.1 77.8 83.3
1.0 1.0 1.0 1.0
96.8 103 113 121
15.5 14.6 13.3 12.4
5.0 5.0 5.0 5.0
GGK GGM GGP GGR
1SMC78A
78
86.7
1.0
126
11.4
5.0
GGT
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform. 4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute. Devices listed in bold, italic are ON Semiconductor preferred devices.
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ON Semiconductor Selector Guide − Discrete Devices
TVS − in Surface Mount (continued) Table 15. 1.5 SMC Series Unidirectional Overvoltage Transient Suppressors; 1500 Watts Peak Power @ 1 ms Surge (10 x 1000 ms) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (VF = 3.5 V Max, IF = 100 A for all types) (Note 4) Breakdown Voltage VBR @ IT Volts (Note 2) Device
Min
Nom
Max
mA
Working Peak Reverse Voltage VRWM Volts (Note 1)
Maximum Reverse Leakage @ VRWM IR μA
Maximum Reverse Surge Current IPP Amps (Note 3)
Maximum Reverse Voltage @ IPP (Clamping Voltage) VC Volts
Maximum Temperature Coefficient of VBR %/°C
Device Marking
IRSM IRSM 2
SMC CASE 403 PLASTIC
0
1 2
3
4
5
6
Time (ms) Surge Current Characterisitcs 1.5SMC6.8A 1.5SMC7.5A 1.5SMC8.2A 1.5SMC9.1A
6.45 7.13 7.79 8.65
6.8 7.5 8.2 9.1
7.14 7.88 8.61 9.55
10 10 10 1
5.8 6.4 7.02 7.78
1000 500 200 50
143 132 124 112
10.5 11.3 12.1 13.4
0.057 0.061 0.065 0.068
6V8A 7V5A 8V2A 9V1A
1.5SMC10A 1.5SMC12A 1.5SMC13A
9.5 11.4 12.4
10 12 13
10.5 12.6 13.7
1 1 1
8.55 10.2 11.1
10 5 5
103 90 82
14.5 16.7 18.2
0.073 0.078 0.081
10A 12A 13A
1.5SMC15A 1.5SMC16A 1.5SMC18A 1.5SMC20A
14.3 15.2 17.1 19
15 16 18 20
15.8 16.8 18.9 21
1 1 1 1
12.8 13.6 15.3 17.1
5 5 5 5
71 67 59.5 54
21.2 22.5 25.2 27.7
0.084 0.086 0.088 0.09
15A 16A 18A 20A
1.5SMC22A 1.5SMC24A 1.5SMC27A 1.5SMC30A
20.9 22.8 25.7 28.5
22 24 27 30
23.1 25.2 28.4 31.5
1 1 1 1
18.8 20.5 23.1 25.6
5 5 5 5
49 45 40 36
30.6 33.2 37.5 41.4
0.092 0.094 0.096 0.097
22A 24A 27A 30A
1.5SMC33A 1.5SMC36A 1.5SMC39A 1.5SMC43A
31.4 34.2 37.1 40.9
33 36 39 43
34.7 37.8 41 45.2
1 1 1 1
28.2 30.8 33.3 36.8
5 5 5 5
33 30 28 25.3
45.7 49.9 53.9 59.3
0.098 0.099 0.1 0.101
33A 36A 39A 43A
1.5SMC47A 1.5SMC51A 1.5SMC56A 1.5SMC62A
44.7 48.5 53.2 58.9
47 51 56 62
49.4 53.6 58.8 65.1
1 1 1 1
40.2 43.6 47.8 53
5 5 5 5
23.2 21.4 19.5 17.7
64.8 70.1 77 85
0.101 0.102 0.103 0.104
47A 51A 56A 62A
1.5SMC68A 1.5SMC75A 1.5SMC82A 1.5SMC91A
64.6 71.3 77.9 86.5
68 75 82 91
71.4 78.8 86.1 95.5
1 1 1 1
58.1 64.1 70.1 77.8
5 5 5 5
16.3 14.6 13.3 12
92 103 113 125
0.104 0.105 0.105 0.106
68A 75A 82A 91A
1. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (VRWM) which should be equal to or greater than the DC or continuous peak operating voltage level. 2. VBR measured at pulse test current IT at ambient temperature of 25_C. 3. 10 x 1000 μs exponential decay surge waveform. 4. 1/2 sine wave (or equivalent square pulse, PW = 8.3 ms, duty cycle = 4 pulses per minute. Devices listed in bold, italic are ON Semiconductor preferred devices.
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ON Semiconductor Selector Guide − Discrete Devices
TVS/ESD Protection − One Line SD05 Series Table 16. Single Line TVS/ESD in SOD−323; 350 Watts Peak Power (8 x 20 ms); Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL Breakdown Voltage VBR (Note 5) (V) Min
Device
Nom
Max
2
@ IT (mA)
Reverse Voltage Working Peak VRWM (Volts)
Max Reverse Leakage Current IR (mA)
CASE 477 STYLE 1 SOD−323
1
Max Reverse Surge Current IPP (A)
1
Max Reverse Voltage @ IPP (Clamping Voltage) VC (V)
Typical Capacitance (pF) Pin 1 to 3 @ 0 Volts
2
SD05
6.2
6.75
7.3
1.0
5.0
10
24
14.5
350
SD12
13.3
14.5
15.75
1.0
12
1.0
15
25
150
5. VBR measured at pulse test current IT at an ambient temperature of 25°C.
SD12C Table 17. Single Line TVS/ESD in SOD−323; 350 Watts Peak Power (8 x 20 ms); Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) BIDIRECTIONAL Breakdown Voltage VBR (Note 6) (V) Min
Device
Nom
Max
2
CASE 477 STYLE 1 SOD−323
1 SD12C
13.3
@ IT (mA)
Reverse Voltage Working Peak VRWM (Volts)
−
−
1.0
Max Reverse Surge Current IPP (A)
1
12
6. VBR measured at pulse test current IT at an ambient temperature of 25°C.
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Max Reverse Leakage Current IR (mA)
Max Reverse Voltage @ IPP (Clamping Voltage) VC (V)
Typical Capacitance (pF) Pin 1 to 3 @ 0 Volts
24
64
2
1.0
15
ON Semiconductor Selector Guide − Discrete Devices
TVS/ESD Protection − One Line (continued) ESD5Z Series Table 18. Single Line TVS/ESD in SOD−523; 200 Watts Peak Power (8 x 20 ms); Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL Breakdown Voltage Reverse Voltage Working Peak VRWM (Volts)
VBR (Note 7) (V) Min
Device
Nom
@ IT (mA)
Max
2
Max Reverse Leakage Current IR (mA)
CASE 502 SOD−523
1
Max Reverse Surge Current IPP (A)
1
Max Reverse Voltage @ IPP (Clamping Voltage) VC (V)
Typical Capacitance (pF) Pin 1 to 3 @ 0 Volts
2
ESD5Z2.5
4.0
−
−
1.0
2.5
6.0
11
10.9
145
ESD5Z3.3
5.0
−
−
1.0
3.3
0.05
11.2
14.1
105
ESD5Z5.0
6.2
−
−
1.0
5.0
0.05
9.4
18.6
80
ESD5Z6.0
6.8
−
−
1.0
6.0
0.01
8.8
20.5
70
ESD5Z7.0
7.5
−
−
1.0
7.0
0.01
8.8
22.7
65
7. VBR measured at pulse test current IT at an ambient temperature of 25°C.
NUP1105L − LIN Bus Protector Table 19. Single Line TVS/ESD in SOT−23; 350 Watts Peak Power (8 x 20 ms); Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) BIDIRECTIONAL Max Reverse Leakage Current
Breakdown Voltage VBR (V) Device
Min
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
3
Capacitance (pF) @ 0 V, 1.0 MHz Typ
IPP (A)
VC (V)
Peak Power Rating (8x20 msec) (Note 8)
44
350
1
CASE 318 STYLE 27 SOT−23
1
Max
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
3 2
2 NUP1105L
25.7
−
28.4
1.0
0.1
24
8. Surge waveform 8 x 20 msec.
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−
30
8.0
ON Semiconductor Selector Guide − Discrete Devices
TVS/ESD Protection − Two Line SM05 − Common Anode Series Table 20. Two Line TVS/ESD in SOT−23; 300 Watts Peak Power (8 x 20 ms); Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL Breakdown Voltage VBR (Note 9) (V) Min
Device
Nom
3
Max
@ IT (mA)
Reverse Voltage Working Peak VRWM (Volts)
CASE 318 STYLE 12 LOW PROFILE SOT−23 PLASTIC
1 2
Max Reverse Leakage Current IR (mA)
Max Reverse Surge Current IPP (A)
Max Reverse Voltage @ IPP (Clamping Voltage) VC (V)
Typical Capacitance (pF) Pin 1 to 3 @ 0 Volts
1 3 2
SM05
6.2
6.75
7.3
1.0
5.0
10
17
9.8
225
SM12
13.3
14.5
15.75
1.0
12
1.0
12
19
95
9. VBR measured at pulse test current IT at an ambient temperature of 25°C.
MA3075WAL Table 21. Two Line TVS/ESD in SOT−23; Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (VF = 0.9 V Max @ IF = 10 mA) Breakdown Voltage VBR (Note 10) (V) Min
Device 3
Max
CASE 318 STYLE 12 LOW PROFILE SOT−23 PLASTIC
1 2 MA3075WAL
Nom
7.2
7.5
7.9
10. VBR measured at pulse test current IT at an ambient temperature of 25°C.
http://onsemi.com 232
@ IT (mA)
Max Reverse Leakage Current IR (mA @ 5 V)
Maximum Temperature Coefficient of VBR (mV/°C)
1 3 2 5.0
1.0
5.3
ON Semiconductor Selector Guide − Discrete Devices
TVS/ESD Protection − Two Line (continued) NUP2105L − CAN Bus Protector Table 22. Two Line TVS/ESD in SOT−23; 350 Watts Peak Power (8 x 20 ms); Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) BIDIRECTIONAL
Max Reverse Leakage Current
Breakdown Voltage VBR (V) Min
Device
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
Capacitance (pF) @ 0 V, 1.0 MHz Typ
Max
3
Peak Power Rating (8x20 msec) (Note 11)
IPP (A)
VC (V)
Watts
1 CASE 318 SOT−23
1
3 2
2 NUP2105L
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
26.2
−
32
1.0
0.1
24
30
−
8.0
44
350
11. Surge waveform 8 x 20 msec.
DF3A6.8FU Table 23. Two Line TVS/ESD in SC−70; 150 Watts Peak Power (8 x 20 ms); Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (VF = 0.9 V Max @ IF = 10 mA) Max Reverse Leakage Current
Breakdown Voltage VBR (Note 12) (V) Min
Device
Nom
Max
@ IT (mA)
IR @ VR (μA) (V)
3
1
CASE 419 SC−70 (SOT−323)
1
Max Reverse Voltage @ IPP (Clamping Voltage) VC (V)
Max Reverse Surge Current IPP (A)
3 2
2 DF3A6.8FU
6.4
6.8
7.2
5.0
0.5
12. VBR measured at pulse test current IT at an ambient temperature of 25°C.
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5.0
2.0
9.6
ON Semiconductor Selector Guide − Discrete Devices
TVS/ESD Protection − Two Line (continued) NZL5V6AXV Series Table 24. Two Line ESD Protection in SC−89; Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (VF = 0.9 V Max @ IF = 10 mA) Max Reverse Leakage Current
Breakdown Voltage VBR (Note 13) (V) Min
Device
Nom
3
IR @ VR (μA) (V)
1
CASE 463C SC−89
2
@ IT (mA)
Max
3 2
1 NZL5V6AXV3
5.32
5.6
5.88
5.0
5.0
3.0
NZL6V8AXV3
6.46
6.8
7.14
5.0
1.0
4.5
NZL7V5AXV3
7.12
7.5
7.88
5.0
1.0
5.0
13. VBR measured at pulse test current IT at an ambient temperature of 25°C.
mESD3.3D Series Table 25. Two Line ESD Protection in SOT−723; Meets IEC61000−4−2, Level 4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (VF = 0.9 V Max @ IF = 10 mA) Max Reverse Leakage Current IR (mA) @ VRWM)
Breakdown Voltage VBR (Note 14) (V) Min
Device 3 2
Nom
Max
@ IT (mA)
1
CASE 631AA STYLE 4 SOT−723
3 2
1 mESD3.3D
5.0
−
−
1.0
1.0
mESD5.0D
6.2
−
−
1.0
0.1
mESD6.0D
7.0
−
−
1.0
0.1
14. VBR measured at pulse test current IT at an ambient temperature of 25°C.
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ON Semiconductor Selector Guide − Discrete Devices
TVS/ESD Protection − Four Line • Human Body Model ESD Rating (u16 kV) • IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact)
Max Reverse Leakage Current
Breakdown Voltage
VBR (V) Min
Device
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
6
Capacitance (pF) @ 0 V, 1.0 MHz Typ
Max
CASE 318F STYLE 1 SC−74 PLASTIC
1
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec) (Note 15)
IPP (A)
VC (V)
Watts
1
6
2
5
3
4
MMQA5V6
5.32
5.6
5.88
1.0
2.0
3.0
257
−
3.0
8.0
150
MMQA6V2
5.89
6.2
6.51
1.0
0.7
4.0
225
−
2.66
9.0
150
MMQA6V8
6.46
6.8
7.14
1.0
0.5
4.3
210
−
2.45
9.8
150
MMQA12V
11.4
12
12.6
1.0
0.075
9.1
117
−
1.39
17.3
150
MMQA13V
12.4
13
13.7
1.0
0.075
9.8
108
−
1.29
18.6
150
MMQA15V
14.3
15
15.8
1.0
0.075
11
93
−
1.1
21.7
150
MMQA18V
17.1
18
18.9
1.0
0.075
14
77
−
0.923
26
150
MMQA20V
19
20
21
1.0
0.075
15
69
−
0.84
28.6
150
MMQA21V
20
21
22.1
1.0
0.075
16
66
−
0.792
30.3
150
MMQA22V
20.9
22
23.1
1.0
0.075
17
63
−
0.758
31.7
150
MMQA24V
22.8
24
25.2
1.0
0.075
18
58
−
0.694
34.6
150
MMQA27V
25.7
27
28.4
1.0
0.075
21
50
−
0.615
39
150
MMQA30V
28.5
30
31.5
1.0
0.075
23
40
−
0.554
43.3
150
MMQA33V
31.4
33
34.7
1.0
0.075
25
42
−
0.504
48.6
150
SMS05
6.0
−
7.2
1.0
20
5.0
300
400
23
15.5
350
SMS12
13.3
−
15
1.0
1.0
12
120
150
15
23
350
SMS15
16.7
−
18.5
1.0
1.0
15
100
125
12
29
350
SMS24
26.7
−
32
1.0
1.0
24
60
75
8.0
44
350
4
1
5 1
2
CASE 419A SC−88A (SOT−353)
3
5
2 4
3
MSQA6V1W5
6.1
6.6
7.2
1.0
1.0
3.0
90
−
−
−
150
SMF05
6.0
−
7.2
1.0
5.0
5.0
90
−
12
12.5
200
15. Surge waveform 8 x 20 msec.
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ON Semiconductor Selector Guide − Discrete Devices
TVS/ESD Protection − Four Line (continued)
Max Reverse Leakage Current
Breakdown Voltage
VBR (V) Min
Device
5
Nom
Max
IR
VRWM
(mA)
(mA)
(V)
Typ
4
6 1 DF6A6.8FU
@ IT
Capacitance (pF) @ 0 V, 1.0 MHz
6.4
2
CASE 419B SC−88 (SOT−363)
3
6.8
7.2
1.0
1.0
5.0
Max
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec) (Note 16)
IPP (A)
VC (V)
Watts
11.4
75
1
6
2
5
3
4
40
−
7.0
1 CASE 463B SOT−553
5 1
5
2 4
3 NZQA5V6XV5
5.32
5.6
5.88
1.0
1.0
3.0
90
−
10
10.5
100
NZQA6V2XV5
5.89
6.2
6.51
1.0
0.5
4.0
80
−
9.0
11.5
100
NZQA6V8XV5
6.46
6.8
7.14
1.0
0.1
4.3
70
−
8.0
12.5
100
A1
C1
CASE 766AB 5 PIN FLIP−CHIP CSP
B2
A3 NUP4103FC
6.0
7.0
8.0
1.0
0.1
3.3
16. Surge waveform 8 x 20 msec.
http://onsemi.com 236
C3 47
−
−
−
−
ON Semiconductor Selector Guide − Discrete Devices
TVS/ESD Protection − Five Line
Max Reverse Leakage Current
Breakdown Voltage
VBR (V) Device
Min
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
6
Capacitance (pF) @ 0 V, 1.0 MHz Typ
Max
CASE 318F STYLE 1 SC−74 PLASTIC
1
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec) (Note 17)
IPP (A)
VC (V)
Watts
1
6
2
5
3
4
SMS05C
6.2
−
7.2
1.0
5.0
5.0
260
−
24
14.5
350
SMS12C
13.3
−
15
1.0
1.0
12
120
−
15
23
350
SMS15C
17
−
19
1.0
1.0
15
95
−
12
29
350
SMS24C
26.7
−
32
1.0
1.0
24
60
−
8.0
44
350
5
4
6 1
2
CASE 419B SC−88 (SOT−363)
3
1
6
2
5
3
4
SMF05C
6.2
−
7.2
1.0
5.0
5.0
80
−
8.0
12.5
100
SMF12C
13.3
−
15
1.0
1.0
12
40
−
6.0
23
100
SMF15C
17
−
19
1.0
1.0
15
33
−
5.0
29
100
SMF24C
26.7
−
32
1.0
1.0
24
21
−
2.5
44
100
−
90
CASE 463A SOT−563
6
1
6
2
5
3
4
1
NUP5120X6
6.2
6.8
7.2
1.0
0.5
3.0
17. Surge waveform 8 x 20 msec.
http://onsemi.com 237
54
−
−
ON Semiconductor Selector Guide − Discrete Devices
Low Capacitance TVS/ESD Protection − One Line SL05 Series Table 26. Single Line Low Cap TVS/ESD in SOT−23; 300 Watts Peak Power (8 x 20 ms); Meets IEC61000−4−2, Level 4 Max Reverse Leakage Current
Breakdown Voltage VBR (V) Min
Device
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
3
Capacitance (pF) @ 0 V, 1.0 MHz Typ
2
Peak Power Rating (8x20 msec)
IPP (A)
VC (V)
Watts
2
CASE 318 STYLE 26 SOT−23
1
Max
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
1 3 (NC)
SL05
6.0
−
8.0
1.0
20
5.0
3.5
5.0
17
11
300
SL15
16.7
−
18.5
1.0
1.0
15
3.5
5.0
10
30
300
SL24
26.7
−
29
1.0
1.0
24
3.5
5.0
5.0
55
300
Table 27. Meets IEC61000−4−2, Level 4 Breakdown Voltage
Device
Forward Voltage
VBR (V)
@ Ibr
Vf (V)
If
Min
mA
Max
mA ANODE 1
3 CASE 318 SOT−23
1
Capacitance* (pF) @ 0 V, 1.0 MHz Typ
Max
CATHODE 2
3 CATHODE/ANODE
2 USB 2.0 NUP1301ML3
70
100
0.855
*Cj = Between I/O pin and ground.
http://onsemi.com 238
10
−
0.9
ON Semiconductor Selector Guide − Discrete Devices
Low Capacitance TVS/ESD Protection − Two Line Table 28. Meets IEC61000−4−2, Level 4
Max Reverse Leakage Current
Breakdown Voltage VBR (V) Min
Device
6
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
Capacitance* (pF) @ 0 V, 1.0 MHz Typ
Max
54
12
CASE 318G TSOP−6
3
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec)
IPP (A)
VC (V)
Watts
I/O 1
6 I/O
VN 2
5 VP
N/C 3
4 N/C
USB 2.0 NUP2201MR6
6.0
−
−
−
5.0
5.0
3.0
5.0
25
20
500
15
2000
*Cj = Between I/O pin and ground.
CASE 751 SO−8
8 1
1
8
2
7
3
6
4
5
USB 1.1 LC03−6
6.8
−
−
1.0
20
5.0
16
25
50
*Cj = Between I/O pin and ground.
Table 29. Meets IEC61000−4−2, Level 4 Breakdown Voltage
Device
5
Forward Voltage
VBR (V)
@ Ibr
Vf (V)
If
Min
mA
Max
mA
1
2
CASE 419B SC−88
3
Typ
VN
1
6
N/C
I/O
2
5
I/O
VP
3
4
N/C
4
6
Capacitance* (pF) @ 0 V, 1.0 MHz Max
USB 2.0 NUP2301MW6
70
100
0.855
*Cj = Between I/O pin and ground.
http://onsemi.com 239
10
1.6
3.0
ON Semiconductor Selector Guide − Discrete Devices
Low Capacitance TVS/ESD Protection − Four Line Max Reverse Leakage Current
Breakdown Voltage VBR (V) Min
Device
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
Capacitance* (pF) @ 0 V, 1.0 MHz Typ
4
Max
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec) (Note 18)
IPP (A)
VC (V)
Watts
1
5 2
1
CASE 419A SC−88A (SOT−353)
3
5
2 4
3
NSQA6V8AW5
6.4
6.8
7.1
1.0
1.0
5.0
12
15
1.6
13
20
NSQA12VAW5
11.4
12
12.7
5.0
0.05
9.0
7.0
15
0.9
23
20
1 CASE 463B SOT−553
5 1
5
2 4
3 NZQA5V6AXV5
5.3
5.6
5.9
1.0
1.0
3.0
13
17
1.6
13
20
NZQA6V8AXV5
6.1
6.8
7.2
1.0
1.0
3.0
12
15
1.6
13
20
CASE 751 SO−8
8 1
1
8
2
7
3
6
4
5
USB 2.0 NUP4201DR2
6.0
−
−
1.0
10
5.0
5.0
10
10
12
500
SRDA05−4R2
6.0
−
−
1.0
10
5.0
10
15
10
12
500
6
I/O 1
6 I/O
VN 2
5 VP
I/O 3
4 I/O
54 CASE 318G TSOP−6
3 12
USB 2.0 NUP4201MR6
6.0
−
−
−
5.0
5.0
*Cj = Between I/O pin and ground. 18. Surge waveform 8 x 20 msec.
http://onsemi.com 240
3.0
5.0
25
20
500
ON Semiconductor Selector Guide − Discrete Devices
Low Capacitance TVS/ESD Protection − Four Line (continued) Table 30. Meets IEC61000−4−2, Level 4 Breakdown Voltage
Device
Forward Voltage
VBR (V)
@ Ibr
Vf (V)
If
Min
mA
Max
mA
Capacitance* (pF) @ 0 V, 1.0 MHz Typ
I/O 1 6
Max
6 I/O
54 CASE 318G TSOP−6
3
12
GND 2
5 VCC 4 I/O
I/O 3
USB 2.0 NUP4301MR6
70
100
0.855
10
1.6
3.0
*Cj = Between I/O pin and ground.
Table 31. Meets IEC61000−4−2, Level 4 Breakdown Voltage
Device
6
5
Forward Voltage
VBR (V)
@ Ibr
Vf (V)
If
Min
mA
Max
mA
4
1
2
CASE 318F TSOP−6
3
Capacitance* (pF) @ 0 V, 1.0 MHz Typ
I/O 1
6 I/O
VP 2
5 VN
I/O 3
4 I/O
Max
USB 2.0 NUP4304MR6
70
100
0.855
10
1.6
3.0
*Cj = Between I/O pin and ground.
Max Reverse Leakage Current
Breakdown Voltage VBR (V) Min
Device
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
Capacitance* (pF) @ 0 V, 1.0 MHz Typ
Max
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec)
IPP (A)
VC (V)
Watts
I/O 1 6
6 I/O
54 CASE 318G TSOP−6
3 12
GND 2
5 VCC
1/O 3
4 I/O
USB 2.0 NUP4302MR6
30
−
−
0.1
30
−
*Cj = Between I/O pin and ground.
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−
30
−
−
−
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Power Transistors In Brief . . . Through ON Semiconductor’s extensive process improvements and stringent quality control standards, we are proud to offer a broad line of bipolar power transistors that meet or exceed those of other suppliers. This portfolio consists of discrete and Darlington transistors in a variety of popular packages from the low power surface mount SOT−223 to the high power TO−3.
Page
Bipolar Power Transistors . . . . . . . . . . . . . . . . . . . . . . Discrete Transistors . . . . . . . . . . . . . . . . . . . . . . . . . Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . Through−Hole . . . . . . . . . . . . . . . . . . . . . . . . . . . Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . Surface Mount . . . . . . . . . . . . . . . . . . . . . . . . . . . Through−Hole . . . . . . . . . . . . . . . . . . . . . . . . . . . Audio . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electronic Lamp Ballasts . . . . . . . . . . . . . . . . . . . . .
Product Highlights Audio Transistors: • Improved gain linearity, complementary pair gain matching and optimized die area for symmetrical characteristics in complementary configurations. • Unsurpassed high voltage FBSOA performance. • New state of the art 150 W and 180 W high frequency discrete transistors. • ThermalTrakt output transistors with internal bias control eliminate amplifier warm−up period, enable instant temperature adjustment, upgrade sound quality and improve bias stability. • High voltage discrete audio output transistors that reach higher voltages than previously available. Electronic Lamp Ballast: • High frequency, high gain bipolar transistors that utilize monolithic collector/emitter diode tailored to meet the needs of lamp ballasts. • Active anti−saturation network to provide short and highly reproducible collector current storage time. Low VCE(sat) Transistors: • Devices with combination of low saturation voltage and high gain are ideal for high speed switching applications where power savings is a concern. Ultra High Current Transistors: • Dual matched die configurations up to 60 A. • Working voltages from 60 V to 120 V. ON Semiconductor has a commitment to quality and total customer satisfaction. We will continue to demonstrate this in the new and innovative products we plan to announce in the coming year.
http://onsemi.com 242
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ON Semiconductor Selector Guide − Discrete Devices
BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range (Amps)
VCE Range (Volts)
PD (Watts)
SOT−223
0.5−3.0
30−300
2.75−3.0
DPAK
0.5-10
25-450
12.5-25
D2PAK
6.0−10
80−350
50−75
DPAK
0.5-10
25-450
12.5-25
TO-225AA
0.3-5.0
25-500
12.5-50
TO-220AB
0.5-15
32-400
30-150
Isolated TO-220
1.0-10
60-450
28-45
TO−218
10−25
60−350
80−150
TO−247
8.0−30
150−250
100−200
TO-264
15-20
250-350
200−250
TO-264 5−Lead
15
260
200
TO-3 (TO-204AA) 40 Mil Pins
4.0-30
40-250
115-250
TO−3 (TO-204AE) 60 Mil Pins
40−60
60-250
150-300
Package
http://onsemi.com 243
ON Semiconductor Selector Guide − Discrete Devices
Discrete Transistors ICCont Amps Max
VCEO(sus) Volts Min
0.5
300
3.0
30
0.5 1.0
Device Type
PD (Case) Watts @ 25°C
hFE Min/Max
@ IC Amp
fT MHz Min
MMJT350T1
30/240
0.05
30
2.75
MMJT9410T1
MMJT9435T1
50
1.0
100 typ
3.0
300
MJD340T4
MJD350T4
30/240
0.05
30
15
250
MJD47T4
30/150
0.3
10
15
10 min
1.0
10
15
30/150
0.3
10
15
NPN
350 400
PNP
MJD5731T4 MJD50T4
50 min
2.0
3.0
20
50
NJD2873T4
40 min
2.0
30
12.5
450
MJD18002D2T4
6.0 min
2.0
13 typ
25
40
MJD31T4
MJD32T4
10 min
1.0
3.0
15
100
MJD31CT4
MJD32CT4
10 min
1.0
3.0
15
100
MJD243T4
MJD253T4
40/180
0.2
40
12.5
5.0
25
MJD200T4
MJD210T4
45/180
2.0
65
12.5
6.0
100
MJD41CT4
MJD42CT4
15/75
3.0
3.0
20
8.0
80
MJD44H11T4
MJD45H11T4
40 min
4.0
50 typ
20
10
60
MJD3055T4
MJD2955T4
20/100
4.0
2.0
20
6.0
100
MJB41CT4
MJB42CT4
15/75
3.0
3.0
65
8.0
80
MJB44H11T4
MJB45H11T4
40/100
4.0
40
50
2.0
3.0
4.0
45
MJD148T4
Package
SOT−223
DPAK
D2PAK 0.3
350
MJE3439
40/160
0.02
15
15
0.5
200
MJE344
30/300
0.05
15
20.8
250
2N5655
30/250
0.1
10
20
300
MJE340
30/240
0.05
30
20.8
350
2N5657
30/250
0.1
10
20
MJE350
BD159 1.0
1.5
2.0 3.0
30/240
0.05
30
20
40
2N4921
2N4918
20/100
0.5
3.0
30
60
2N4922
2N4919
20/100
0.5
3.0
30
80
2N4923
2N4920
20/100
0.5
3.0
30
45
BD135
BD136
40/250
0.15
50
12.5
60
BD137
BD138
40/250
0.15
50
12.5
80
BD139
BD140
40/250
0.15
50
12.5
45
BD234
25 min
1.0
3.0
25
80
BD237
BD238
25 min
1.0
3.0
25
40
MJE180
MJE170
50/250
0.1
50
12.5
60
MJE181
MJE171
50/250
0.1
50
12.5
80
BD179
BD180
40/250
0.15
3.0
25
MJE182
MJE172
50/250
0.1
50
12.5
8.0 min
1.0
12 typ
50
500
BUH51 †
†Style 3.
http://onsemi.com 244
TO−225AA
ON Semiconductor Selector Guide − Discrete Devices
Discrete Transistors (continued) Device Type
ICCont Amps Max
VCEO(sus) Volts Min
4.0
32
BD435
40
MJE521
PD (Case) Watts @ 25°C
hFE Min/Max
@ IC Amp
fT MHz Min
BD436
50 min
2.0
3.0
36
MJE371
40 min
1.0
3.0
40
25 min
1.5
2.0
40
NPN
PNP
2N5190 45
BD437
BD438
40 min
2.0
3.0
36
60
BD439
BD440
25 min
2.0
3.0
36
BD787
BD788
20 min
2.0
50
15
2N5191
2N5194
25/100
1.5
2.0
40
2N5192
2N5195
25/100
1.5
2.0
40
80
BD441
BD442
15 min
2.0
3.0
36
100
MJE243
MJE253
40/120
0.2
40
15
5.0
25
MJE200
MJE210
45/180
2.0
65
15
1.0
40
TIP29
TIP30
15/75
1.0
3.0
30
60
TIP29A
TIP30A
15/75
1.0
3.0
30
2.0
80
TIP29B
TIP30B
15/75
1.0
3.0
30
100
TIP29C
TIP30C
15/75
1.0
3.0
30
250
TIP47
30/150
0.3
10
40
300
TIP48
MJE5730
30/150
0.3
10
40
350
MJE5731
30/150
0.3
10
40
375
MJE5731A
30/150
0.3
10
40
400
TIP50
30/150
0.3
10
40
400/700
BUL44
14/36
0.4
13 typ
50
450/1000
BUX85
30
0.1
4.0
50
14/34
0.2
12 typ
40
MJE18002 3.0
40
TIP31
TIP32
25 min
1.0
3.0
40
60
TIP31A
TIP32A
25 min
1.0
3.0
40
BD242B
25 min
1.0
3.0
40
TIP31B
TIP32B
25 min
1.0
3.0
40
BD241C
BD242C
25 min
1.0
3.0
40
TIP31C
TIP32C
25 min
1.0
3.0
40
80
D44C12
D45C12
40/120
0.2
40 typ
30
350
MJE15034
MJE15035
10 min
2.0
30
50
400/700
MJE13005
6/30
3.0
4.0
60
500/800
BUH50
10 typ
2.0
4.0
50
250
2N6497
10/75
2.5
5.0
80
400/700
BUL45
14/34
0.3
12 typ
75
BUL45D2*
22 min
0.8
13 typ
75
MJE18004
14/34
0.3
13
75
MJE18004D2*
15 min
0.8
13
75
80
100
4.0
5.0
450/1000
Package
TO−225AA
TO−220AB
NOTE: When two voltages are given, the format is VCEO(sus)/VCES. *D2 suffix indicates transistor with built−in C−E freewheeling diode and antisaturation network.
http://onsemi.com 245
ON Semiconductor Selector Guide − Discrete Devices
Discrete Transistors (continued) Device Type
ICCont Amps Max
VCEO(sus) Volts Min
6.0
40
TIP41
60 80
100
7.0
hFE Min/Max
@ IC Amp
TIP42
15/75
3.0
3.0
65
TIP41A
TIP42A
15/75
3.0
3.0
65
TIP41B
TIP42B
15/75
3.0
3.0
65
BD243B
BD244B
15 min
3.0
3.0
65
BD243C
BD244C
15 min
3.0
3.0
65
TIP41C
TIP42C
NPN
10
15/75
3.0
3.0
65
BUL146
14/34
0.5
14 typ
100
450/1000
MJE18006
14/34
0.5
14 typ
100
2N6111
30/150
3.0
4.0
40
2N6109
30/150
2.5
4.0
40
2N6107
30/150
2.0
4.0
40
30
2N6288
70
2N6292
150
BU407
30 min
1.5
10
60
200
BU406
30 min
1.5
10
60
120
MJE15028
MJE15029
20 min
4.0
30
50
150
MJE15030
MJE15031
20 min
4.0
30
50
250
MJE15032
MJE15033
10 min
2.0
30
50
300
MJE5850
15 min
2.0
30 typ
80
350
MJE5851
15 min
2.0
30 typ
80
400
MJE5852
15 min
2.0
30 typ
80
MJE13007
5/30
5.0
14 typ
80
400/700
BUL147
14/34
1.0
14 typ
125
450/1000
MJE18008
16/34
1.0
13 typ
125
D44H8
D45H8
40 min
4.0
3.0
50
MJE3055T
MJE2955T
20/70
4.0
3.0
75
BD809
BD810
15 min
4.0
1.5
90
D44H11
D45H11
40 min
4.0
50 typ
50
BUH100
6.0 min
10
23 typ
100
90
BUV26
12 min
12
30 typ
85
120
BUV27
12 min
8.0
30 typ
70
6/30
8.0
4.0
100
60
80
400/700 12
400/700 15
PNP
400/700
50
8.0
PD (Case) Watts @ 25°C
fT MHz Min
MJE13009
60
2N6487
2N6490
20/150
5.0
5.0
75
80
2N6488
2N6491
20/150
5.0
5.0
75
D44VH10
D45VH10
20 min
4.0
50 typ
83
4.0 min
20
23 typ
150
400/700
BUH150
NOTE: When two voltages are given, the format is VCEO(sus)/VCES.
http://onsemi.com 246
Package
TO−220AB
ON Semiconductor Selector Guide − Discrete Devices
Discrete Transistors (continued) Device Type
ICCont Amps Max
VCEO(sus) Volts Min
1.0
250
MJF47
3.0
100
MJF31C
5.0
450/1000
6.0 8.0
PD (Case) Watts @ 25°C
hFE Min/Max
@ IC Amp
fT MHz Min
30/150
0.3
10
28
10 min
1.0
3.0
28
MJF18004
14/34
0.3
13 typ
35
400/700
BUL146F
14/34
0.5
14 typ
40
150
MJF15030
MJF15031
40 min
3.0
30
35
450/1000
MJF18008
16/34
1.0
13 typ
45
60
MJF3055
MJF2955
20/100
4.0
2.0
40
80
MJF44H11
MJF45H11
40/100
4.0
40
35
60
TIP33A
20/100
3.0
3.0
80
100
TIP33C
20/100
3.0
3.0
80
15
60
TIP3055
TIP2955
5 min
10
2.5
80
16
160
MJE4343
MJE4353
15 min
8.0
1.0
125
25
60
TIP35A
TIP36A
15/75
15
3.0
125
100
BD249C
10
10
NPN
PNP
MJF32C
15/75
15
3.0
125
TIP35C
TIP36C
15/75
15
3.0
125
8.0
150
MJW21192
MJW21191
15 min
8.0
4.0
100
15
260
MJW0281A
MJW0302A
75/150
3.0
30
150
MJW3281A
MJW1302A
75/150
4.0
30
200
MJW21194
MJW21193
20/60
8.0
4.0
200
MJW21196
MJW21195
20/60
8.0
4.0
200
9.0 typ
20
13 typ
250
16
250
30
450/1000
MJW18020
15
260
MJL3281A
MJL1302A
75/150
4.0
30
200
MJL0281A
MJL0302A
75/150
3.0
30
180
350
MJL4281A
MJL4302A
80/250
5.0
35
230
250
MJL21194
MJL21193
25/75
8.0
4.0
200
MJL21196
MJL21195
25/75
8.0
4.0
200
NJL3281D
NJL1302D
75/150
4.0
30
200
16
15
260
Package
Isolated TO−220
TO−218
TO−247
TO−264
TO−264 (5−Lead) 4.0
250
MJ15020
10
140
2N3442
250
MJ15011
60
2N3055
15
MJ15021
30 min
1.0
20
150
20/70
4.0
3.0
117
MJ15012
20/100
2.0
3.0
200
MJ2955
20/70
4.0
2.5
115
20/70
4.0
0.8
115
2N3055A 120
MJ15015
MJ15016
20/70
4.0
1.0
180
140
MJ15001
MJ15002
25/150
4.0
2.0
200
NOTE: When two voltages are given, the format is VCEO(sus)/VCES.
http://onsemi.com 247
TO−3 (TO−204AA)
ON Semiconductor Selector Guide − Discrete Devices
Discrete Transistors (continued) ICCont Amps Max
VCEO(sus) Volts Min
16
140
Device Type NPN
PNP
hFE Min/Max
@ IC Amp
fT MHz Min
PD (Case) Watts @ 25°C
2N3773
2N6609
15/60
8.0
4.0
150
2N5631
2N6031
15/60
8.0
1.0
200
200
MJ15022
MJ15023
15/60
8.0
5.0
250
250
MJ15024
MJ15025
15/60
8.0
5.0
250
MJ21194
MJ21193
25/75
8.0
4.0
250
MJ21196
MJ21195
25/75
8.0
4.0
250
60
2N3772
15/60
10
2.0
150
90
2N5038
20/100
12
60
140
140
MJ15003
MJ15004
25/150
5.0
2.0
250
60
2N5885
2N5883
20/100
10
4.0
200
80
2N5886
2N5884
20/100
10
4.0
200
100
2N6338
30/120
10
40
200
150
2N6341
30/120
10
40
200
40
2N3771
15/60
15
2.0
150
60
2N5302
15/60
15
2.0
200
100
MJ802
25/100
7.5
2.0
200
200
BUV21
10 min
25
8.0
150
250
BUV22
10 min
20
8.0
250
50
80
2N5686
2N5684
15/60
25
2.0
300
60
60
MJ14001
15/100
50
3.0
300
MJ14003
15/100
50
3.0
300
20
25
30
40
80
MJ14002
MJ4502
http://onsemi.com 248
Package
TO−3 (TO−204AA)
TO−3 (TO−204AE)
ON Semiconductor Selector Guide − Discrete Devices
Darlington Transistors Device Type
ICCont Amps Max
VCEO(sus) Volts Min
2.0
100
MJD112T4
4.0
80
MJD6039T4
8.0
100
MJD122T4
hFE Min/Max
@ IC Amp
1000 min
2.0
25
20
1k/2k
2.0
25
20
MJD127T4
1k/2k
4.0
4
20
MJD128T4
1k/2k
4.0
4
20
1k min
5.0
500/3400
5.0
NPN
120 10
80
MJD44E3T4
10
350
BUB323Z
PD (Case) Watts @ 25°C
fT MHz Min
PNP MJD117T4
Package
DPAK
20 2.0
75
D2PAK 2.0
100
4.0
40 45
60
80
2.0
5.0
8.0
MJE270†
MJE271†
1.5k min
0.12
6.0
15
2N6034
25 min
1.5
2.0
40
BD675
BD676
750
1.5
3.0
40
BD675A
BD676A
750
2.0
3.0
40
BD677
BD678
750 min
1.5
40
BD677A
BD678A
750 min
2.0
40
MJE800
MJE700
750 min
1.5
1.0
40
2N6038
2N6035
750/18k
2.0
25
40
BD679
BD680
750 min
1.5
BD679A
BD680A
750 min
2.0
MJE802
MJE702
750 min
1.5
1.0
40
MJE803
MJE703
750 min
2.0
1.0
40
25
40
40 40
2N6039
2N6036
750/18k
2.0
100
BD681
BD682
750 min
1.5
60
TIP110
TIP115
500 min
2.0
25
50
80
TIP111
TIP116
500 min
2.0
25
50
100
TIP112
TIP117
500 min
2.0
25
50
60
TIP120
TIP125
1k min
3.0
4.0
65
80
TIP121
TIP126
1k min
3.0
4.0
65
100
TIP122
TIP127
1k min
3.0
4.0
75
60
2N6043
2N6040
1k/10k
4.0
4.0
75
TIP100
TIP105
1k/20k
3.0
4.0
80
BDX53B
BDX54B
750 min
3.0
4.0
60
TIP101
TIP106
1k/20k
3.0
4.0
80
1k/15k
4.0
70 70
80
TO−225AA
40
TO−220AB TIP131 100
TIP132
TIP137
1k/15k
4.0
2N6045
2N6042
1k/10k
3.0
BDX53C
BDX54C
750 min
3.0
TIP102
TIP107
4.0
75
1k/20k
3.0
4.0
80
300/600
MJE5740
200 min
4.0
4.0
80
400
MJE5742
200 min
4.0
NOTE: When two voltages are given, the format is VCEO(sus)/VCES. †Style 3.
http://onsemi.com 249
80
ON Semiconductor Selector Guide − Discrete Devices
Darlington Transistors (continued) Device Type
ICCont Amps Max
VCEO(sus) Volts Min
10
60
2N6387
80
100 15
PD (Case) Watts @ 25°C
hFE Min/Max
@ IC Amp
fT MHz Min
2N6667
1k/20k
5.0
20
65
BDX33B
BDX34B
750 min
3.0
3.0
70
2N6388
2N6668
1k/20k
5.0
20
65
BDX33C
BDX34C
750 min
3.0
3.0
70
BDW46
1k min
5.0
4.0
85
NPN
80
PNP
100
BDW42
BDW47
1k min
5.0
4.0
85
5.0
100
MJF122
MJF127
2000 min
3.0
4.0
28
10
100
MJF6388
MJF6668
3k/20k
3.0
20
40
10
60
TIP140
TIP145
500 min
10
4.0
125
TIP141
TIP146
500 min
10
4.0
125
BDV65B
BDV64B
1k min
5.0
TIP142
TIP147
500 min
10
500/3400
5.0
100
4.0
150
MJH11018
MJH11017
400/15k
10
3.0
150
200
MJH11020
MJH11019
400/15k
10
3.0
150
250
MJH11022
MJH11021
400/15k
10
3.0
150
20
100
MJH6284
MJH6287
750/18k
10
4.0
125
12
100
2N6052
750/18k
6.0
4.0
150
15
250
MJ11022
MJ11021
100 min
15
3.0
175
20
60
2N6282
750/18k
10
4.0
160
2N6286
750/18k
10
4.0
160
2N6287
750/18k
10
4.0
160
1k min
20
4.0
200
30
50
150
100
2N6284
60
MJ11012
120
MJ11016
MJ11015
1k min
20
4.0
200
250
MJ11022
MJ11021
400/15k
10
3.0
200
60
MJ11028
MJ11029
400 min
50
300
90
MJ11030
400 min
50
300
120
MJ11032
400 min
50
300
MJ11033
http://onsemi.com 250
Isolated TO−220
125
BU323Z
80
TO−220AB
125
350 15
Package
TO−218
TO−3 (TO−204AA)
TO−3 (TO−204AE)
ON Semiconductor Selector Guide − Discrete Devices
Audio GENERAL DESIGN CURVES FOR POWER AUDIO OUTPUT STAGES V(BR)CEO Required on Output and Driver Transistor vs. Output Power for 4, 8 and 18 W Loads
Output Transistor Peak Collector Current vs. Output Power for 4, 8 and 16 W Loads 50
16 OHMS
300 V (BR) CEO (VOLTS)
PEAK OUTPUT CURRENT (AMPS)
500 8 OHMS 4 OHMS
100 70 50 30
10 10
30
50
100
300
500
30
4 OHMS 8 OHMS
10 16 OHMS
5.0 3.0
1.0 10
1000
30
OUTPUT POWER (WATTS)
50
100
300
500
1000
OUTPUT POWER (WATTS)
Another important parameter that must be considered before selecting the output transistors is the safe−operating area these devices must withstand. For a complete discussion see Application Note AN485.
Recommended Power Transistors for Audio/Servo Loads RMS Power Output
NPN
PNP
To 25 W
MJE15030
25 to 50 W
50 to 100 W
Over 100 W
hFE
Package
PD Watts @ 25°C
Min/Max
@ IC Amps
fT MHz Typ
VCEO
IC Max
MJE15031
TO−220
50
150
8.0
20 min
4.0
30
MJE15032
MJE15033
TO−220
50
250
8.0
50 min
1.0
30
MJE15034
MJE15035
TO−220
50
350
4.0
50 min
1.0
30
MJ15001
MJ15002
TO−3
200
140
15
25/150
4.0
3.0
MJ15003
MJ15004
TO−3
150
140
20
25/150
5.0
3.0
MJ15015
MJ15016
TO−3
180
120
15
20/70
4.0
3.0
MJ15020
MJ15021
TO−3
250
250
4.0
30 min
1.0
30
MJW21192
MJW21191
TO−3
100
150
8.0
15 min
4.0
4.0
MJW0281A
MJW0302A
TO−3
150
260
15
75/150
3.0
30
MJL0281A
MJL0302A
TO−264
180
260
15
75/150
3.0
30
MJL21194
MJL21193
TO−264
200
200
16
25/75
8.0
4.0
MJL21196
MJL21195
TO−264
200
200
16
25/75
8.0
4.0
MJW21194
MJW21193
TO−247
200
250
16
20/60
8.0
4.0
MJW21196
MJW21195
TO−247
200
250
16
25/60
8.0
4.0
MJL3281A
MJL1302A
TO−264
200
260
15
75/150
5.0
30
MJW3281A
MJW1302A
TO−247
200
260
15
75/150
5.0
30
MJL4281A
MJL4302A
TO−264
200
350
15
80/200
5.0
35
NJL3281D
NJL1302D
TO−264 (5−Lead)
200
260
15
75/150
7.0
30
MJ15024
MJ15025
TO−3
250
250
16
15/60
8.0
4.0
MJ21194
MJ21193
TO−3
250
250
16
25/75
8.0
4.0
The Power Transistors shown are provided for reference only and show device capability. The final choice of the Power Transistors used is left to the circuit designer and depends upon the particular safe−operating area required and the mounting and heat sinking configuration used. http://onsemi.com 251
ON Semiconductor Selector Guide − Discrete Devices
Bipolar Power Transistors for Electronic Lamp Ballasts IC Operating Amps
hFE min @ IC Operating VCE = 1.0 V
Inductive Switching @ IC Operating tsi/tfi Max (μs)
PD (Case) Watts @ 25°C
BUL44
1.0
8.0
2.75/0.175
50
1000
MJE18002
1.0
6.0
2.75/0.175
50
500
800
BUH50
2.0
8.0 typ
2.75/0.15
50
400
700
BUL45
2.0
7.0
3.8/0.17
75
700
BUL45D2*
2.0
10
2.25/0.015
75
1000
MJE18004
2.0
6.0
2.5/0.175
75
1000
MJE18004D2*
2.0
6.0
2.4/0.15
75
400
700
BUL146
3.0
8.0
2.5/0.15
100
450
1000
MJE18006
3.0
6.0
3.2/0.15
100
400
700
BUL147
4.5
8.0
3.2/0.15
125
450
1000
MJE18008
4.5
6.0
3.2/0.15
125
10
400
700
BUH100
5.0
10 typ
3.5/0.15
100
15
400
700
BUH150
10
8.0 typ
2.75/0.175
150
IC Operating Amps
hFE min @ IC Operating VCE = 1.0 V
Inductive Switching @ IC Operating tsi/tfi Max (μs)
PD (Case) Watts @ 25°C
ICCont Amps Max
VCEO(sus) Volts Min
VCES Volts Min
2.0
400
700
450 4.0 5.0
450
6.0
8.0
Device Type
Package
TO−220AB
Isolated TO-220 ICCont Amps Max
VCEO(sus) Volts Min
VCES Volts Min
5.0
450
1000
MJF18004
2.0
6.0
2.5/0.175
35
6.0
400
700
BUL146F
3.0
8.0
2.5/0.15
40
8.0
450
1000
MJF18008
4.5
6.0
3.2/0.15
45
ICCont Amps Max
VCEO(sus) Volts Min
VCES Volts Min
IC Operating Amps
hFE min @ IC Operating VCE = 1.0 V
Inductive Switching @ IC Operating tsi/tfi Max (μs)
PD (Case) Watts @ 25°C
2.0
450
1000
1.0
6.0
1.2/0.150
25
Device Type
Package
Isolated TO−220
DPAK
Device Type MJD18002D2T4
Package
DPAK
TO−225AA (TO−126) ICCont Amps Max
VCEO(sus) Volts Min
VCES Volts Min
3.0
500
800
Device Type BUH51†
IC Operating Amps
hFE min @ IC Operating VCE = 1.0 V
Inductive Switching @ IC Operating tsi/tfi Max (μs)
PD (Case) Watts @ 25°C
1.0
8.0
3.75/0.3
50
Package
TO−225AA BUH−Series are specified for Halogen applications. *D2 suffix indicates transistor with built−in C−E freewheeling diode and antisaturation network. †Style 3.
The isolated TO−220 is UL RECOGNIZED for its isolation feature and has been evaluated to 3500 volts RMS. Actual isolation rating depends on specific mounting position and maintaining required strike and creepage distances. http://onsemi.com 252
ON Semiconductor Selector Guide − Discrete Devices
Rectifiers
In Brief . . .
Page
Continuing investment in research and development for discrete products has created a rectifier manufacturing facility that matches the precision and versatility of the most advanced integrated circuits. As a result, ON Semiconductor’s silicon rectifiers span all high tech applications with quality levels capable of passing the most stringent environmental tests . . . including those for automotive under−hood applications.
Rectifier Numbering System . . . . . . . . . . . . . . . . . . 254 Application Specific Rectifiers . . . . . . . . . . . . . . . . . 255 Low VF Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . 255 Low Leakage Schottky . . . . . . . . . . . . . . . . . . . . 255 High Voltage Schottky . . . . . . . . . . . . . . . . . . . . . 255 MEGAHERTZ . . . . . . . . . . . . . . . . . . . . . . . . . . . . 256 NEW UltraSoft Rectifiers . . . . . . . . . . . . . . . . . . . 256 Energy Rated Rectifiers . . . . . . . . . . . . . . . . . . . 256 Automotive Transient Suppressors . . . . . . . . . . 256 DCM PFC Specific Diodes . . . . . . . . . . . . . . . . . 256 SCHOTTKY Rectifiers . . . . . . . . . . . . . . . . . . . . . . . 257 Surface Mount Schottky . . . . . . . . . . . . . . . . . . . 257 Axial Lead Schottky . . . . . . . . . . . . . . . . . . . . . . . 259 TO−220 Type Schottky . . . . . . . . . . . . . . . . . . . . 260 TO−218 Types and TO−247 Schottky . . . . . . . . 261 POWERTAP II Schottky . . . . . . . . . . . . . . . . . . . 261 UltraSoft Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . 261 Ultrafast Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . 262 Surface Mount Ultrafast . . . . . . . . . . . . . . . . . . . . 262 Axial Lead Ultrafast . . . . . . . . . . . . . . . . . . . . . . . 263 TO−220 Type Ultrafast . . . . . . . . . . . . . . . . . . . . 264 TO−218 Types and TO−247 Ultrafast . . . . . . . . 265 POWERTAP II Ultrafast . . . . . . . . . . . . . . . . . . . . 265 Fast Recovery Rectifiers/General Purpose Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . 266
Product Highlights:
• Surface Mount Devices − A major thrust has been the development and introduction of a broad range of power rectifiers, Schottky and Ultrafast, 1/2 amp to 40 amp, 10 to 600 volts. • Application Specific Rectifiers − − Schottky rectifiers having lower forward voltage drop (0.3 to 0.6 volts) for use in low voltage SMPS outputs and as “OR”ing diodes. − MEGAHERTZ™ series for high frequency power supplies and power factor correction. − Ultrasoft rectifiers for high speed rectification. − Energy rated rectifiers with guaranteed energy handling capability. − Automotive transient suppressors. • Ultrafast rectifiers having reverse recovery times as low as 25 ns to complement the Schottky devices for higher voltage requirements in high frequency applications. • A wide variety of package options to match virtually any potential requirement. The rectifier selector section that follows has generally been arranged by package and technology. The individual tables have been sorted by voltage and current with the package types for the devices listed shown above each table. The Application Specific Rectifiers are also included in their respective tables.
http://onsemi.com 253
ON Semiconductor Selector Guide − Discrete Devices
RECTIFIER NUMBERING SYSTEM PART NUMBER KEY
XXX X
PREFIX
XX IO
(TYPE DESIGNATOR)
F = FULLY ISOLATED A = SURFACE MT (SMA) S = SURFACE MT (SMB/SMC) D = DPAK B = D2PAK H = MEGAHERTZ M = POWERMITER P = POWERTAP I = IPAK
PREFIX KEY
SUFFIX KEY
EXAMPLE:
MUR MBR MR MSR CT PT WT SF PF
= = = = =
= = = =
XX X
XX
G G = LEAD FREE
VR
(X10 EXCEPT SCHOTTKY)
PACKAGING DESIGNATOR*
SUFFIX
R = REVERSE L = LOW VF E = ENERGY
(DUAL DESIGNATOR)
ULTRA FAST RECTIFIER (SCHOTTKY) BARRIER RECTIFIER STANDARD & FAST RECOVERY ULTRASOFT
CENTER TAP (DUAL) TO−220, POWERTAP, DPAK, D2PAK CENTER TAP (DUAL) TO−218 PACKAGE CENTER TAP (DUAL) TO−247 SOD−123 FLAT LEAD POWER FACTOR CORRECTION SPECIFIC
MUR ULTRAFAST
EXAMPLE:
XX
MBR SCHOTTKY
30
20
WT
30 AMP
200 V
CENTER TAP (DUAL) TO−247
30
45
WT
30 AMP
45 V
CENTER TAP (DUAL) TO−247
*For available packaging options consult Sales Office or see Data Sheet.
http://onsemi.com 254
ON Semiconductor Selector Guide − Discrete Devices Application Specific Rectifiers Table 1. Low VF Schottky Rectifiers IO (Amps)
VRRM (Volts)
VF @ Rated IO and TC = 25°C Volts (Max)
IR @ Rated VRRM mAmps (Max)
MBR0520LT1, T3
0.5
20
0.385
0.25
SOD-123
MBR120LSFT1, T3
1.0
20
0.45
0.4
SOD−123 Flat Lead
MBR120VLSFT1, T3
1.0
20
0.34
0.6
SOD−123 Flat Lead
MBR130LSFT1
1.0
30
0.38
1.0
SOD−123 Flat Lead
MBRM110LT1, T3
1.0
10
0.365
0.5
PowerMiteR
MBRA210LT3
2.0
10
0.35
0.7
SMA
MBRS130LT3
1.0
30
0.395
1.0
SMB
MBRS230LT3
2.0
30
0.50
1.0
SMB
MBRS410LT3
4.0
10
0.33
5.0
SMC
MBRD835L
8.0
35
0.41
1.4
DPAK
MBRD1035CTL
10
35
0.41
6.0
DPAK
MBR2030CTL
20
30
0.48
5.0
TO-220
MBRB2535CTL
25
35
0.41
10
D2PAK
MBR2535CTL
25
35
0.41
5.0
TO-220
MBRB2515L
25
15
0.42
15
D2PAK
MBR2515L
25
15
0.42
15
TO-220
MBRB3030CTL
30
30
0.51
5.0
D2PAK
MBR4015LWT
40
15
0.42
5.0
TO-247
MBRP20030CTL
200
30
0.52
5.0
POWERTAP II
MBRP40045CTL
400
45
0.57
10
POWERTAP II
MBRP400100CTL
400
100
0.83
6.0
POWERTAP II
MBRP60035CTL
600
35
0.57
10
POWERTAP II
IO (Amps)
VRRM (Volts)
VF @ Rated IO and TC = 25°C Volts (Max)
IR @ Rated VRRM mAmps (Max)
MBR120ESFT1, T3
1.0
20
0.53
0.01
SOD−123FL
MBRM110ET1, T3
1.0
10
0.53
0.001
POWERMITE
MBRM120ET1, T3
1.0
20
0.53
0.01
POWERMITE
MBRA120ET3
1.0
20
0.53
0.01
SMA
MBRA210ET3
2.0
10
0.5
0.05
SMA
MBRS410ET3
4.0
10
0.5
0.15
SMC
IO (Amps)
VRRM (Volts)
VF @ Rated IO and TC = 25°C Volts (Max)
IR @ Rated VRRM mAmps (Max)
MBRS3200T3
3.0
200
0.84
0.005
SMB
MBRS3201T3 K
3.0
200
0.84
5.0 mA = 0.005 mA
SMC
MBRS4201T3 K
4.0
200
0.86
0.00035
SMC
MBRB20200CT, T4
20
200
1.0
1.0
D2PAK
MBR20200CT
20
200
1.0
1.0
TO−220AB
MBRF20200CT
20
200
1.0
1.0
FULL PAK
MBR40250 K
40
250
0.097
0.03
TO−220AC
MBR40250T K
40
250
0.097
0.03
TO−220AB
MBRF40250 K
40
250
0.097
0.03
TO−220
MBRF40250T K
40
250
0.097
0.03
TO−220 FULL PAK
Device
Package
Table 2. Low Leakage Schottky Rectifiers Device
Package
Table 3. High Voltage Schottky Rectifiers Device
K New Product All devices listed are ON Semiconductor preferred devices
http://onsemi.com 255
Package
ON Semiconductor Selector Guide − Discrete Devices Application Specific Rectifiers (continued) Table 4. MEGAHERTZ™ Rectifiers Maximum IO (Amps)
VRRM (Volts)
VF @ IF = 4.0 A and TC = 25°C (Volts)
MURH840CT
8.0
400
2.2
0.01
28
TO−220AB
MURHB840CT
8.0
400
2.2
0.01
28
TO−220AB
MURH860CT
8.0
600
2.8
0.01
35
TO−220AB
MURHB860CT
8.0
600
2.8
0.01
35
TO−220AB
MURHF860CT
8.0
600
2.8
0.01
35
TO−220AB
Device
IR @ Rated VRRM (mAmps)
trr (Nanosecond)
Package
Table 5. UltraSoft Rectifiers (For High Speed Rectification) Device
IO (Amps)
VRRM (Volts)
Max VF @ IF (Volts)
Max trr (ηSec)
TJMax (°C)
MSRD620CT
6.0
200
MSR860
8.0
600
MSR1560
15
600
Package
1.35 @ 6.0 A
55
175
DPAK
1.7 @ 8.0 A
120
150
TO−220AC
1.8 @ 15 A
45
150
TO−220AC
Table 6. Energy Rated Rectifiers Device
IO (Amps)
VRRM (Volts)
Max VF @ Rated unless Noted (Volts)
IR @ VRRM (mAmps)
Avalanche Energy (MJ)
Package
MUR180E
1.0
800
1.75
10
10
DO−41
MUR1100E
1.0
1000
1.75
10
10
DO−41
MUR480E
4.0
800
1.75 @ 3.0 A
25
20
DO−201AD
MUR4100E
4.0
1000
1.75 @ 3.0 A
25
20
DO−201AD
MUR880E
8.0
800
1.8
25
20
TO−220AC
MUR8100E
8.0
1000
1.8
25
20
TO−220AC
Table 7. Automotive Transient Suppressors Device
IO (Amps)
VRRM (Volts)
Max VF @ IF (Volts)
IRSM (Amps)
TJMax (°C)
6.0
20
1.1 @ 100 A
62 @ 10 mS
175
Axial Lead Button
MR2835SK
32
23
1.1 @ 100 A
62 @ 10 mS
175
Top Can
MR2520L
6.0
23
1.25 @ 100 A
58 @ 10 mS
175
Axial Lead Button
TRA2532
32
23
1.18 @ 100 A
80 @ 10 mS
175
Microde Button
MR2535L
Package
Table 8. DCM PFC Specific Diodes Device
IO (Amps)
VRRM (Volts)
Max VF @ IF (Volts)
Max trr (ηSec)
MUR450PF, RL K
4.0
520
1.15 V
95
Axial Lead
MUR550APF, RL K
5.0
520
1.15 V
95
Axial Lead
MUR550PF K
5.0
520
1.15 V
95
TO−220AC
MURD550PFT4 K
5.0
520
1.15 V
95
DPAK
K New Product All devices listed are ON Semiconductor preferred devices
http://onsemi.com 256
Package
ON Semiconductor Selector Guide − Discrete Devices SCHOTTKY Rectifiers Table 9. Surface Mount Schottky Rectifiers IFSM (Amperes)
TJ Max (°C)
Max IR(2) TJ = 25°C (mA)
Max IR(3) (mA)
Device
Max VF @ iF TC = 25°C (Volts)
TL = 90°C
MBR0520LT1 MBR0520LT3
0.310 @ 0.1 A 0.385 @ 0.5 A
5.0
125
.075 @ 10 V .250 @ 20 V
5.0 @ 10 V 8.0 @ 20 V
TL = 100°C
MBR0530T1 MBR0530T3
0.375 @ 0.1 A 0.430 @ 0.5 A
5.0
125
.020 @ 15 V .130 @ 30 V
−
VRRM (Volts)
IO(1) (Amperes)
IO Rating Condition
20
0.5
30
0.5
40
0.5
TL = 110°C
MBR0540T1 MBR0540T3
0.53 @ 0.5 A
5.0
150
.010 @ 20 V .020 @ 40 V
−
30
1.0
TL = 65°C
MBR130T1 MBR130T3
0.51 @ 1.0 A
5.5
125
60 mA
−
20
1.0
TL = 140°C
MBR120ESFT1 K MBR120ESFT3 K
0.53 @ 1.0 A
40
150
.010
1.6 @ 100°C
20
1.0
TL = 115°C
MBR120LSFT1 K MBR120LSFT3 K
0.45 @ 1.0 A
50
125
0.4
25 @ 85°C
20
1.0
TL = 119°C
MBR120VLSFT1K MBR120VLSFT3 K
0.340 @ 1.0 A
45
125
0.6
15 @ 85°C
30
1.0
TL = 117°C
MBR130LSFT1K
0.38 @ 1.0 A
40
125
1.0
25 @ 100°C
40
1.0
TL = 112°C
MBR140SFT1 K MBR140SFT3 K
0.55 @ 1.0 A
30
125
0.5
25 @ 85°C
10
1.0
TC = 100°C
MBRM110ET1 K MBRM110ET3 K
0.53 @ 1.0 A
50
150
0.001
0.5 @ 100°C
10
1.0
TC = 115°C
MBRM110LT1 K MBRM110LT3 K
0.365 @ 1.0 A
50
125
0.5
60 @ 100°C
20
1.0
TC = 130°C
MBRM120ET1 MBRM120ET3
0.530 @ 1.0 A 0.455 @ 0.1 A
50
150
0.010 @ 20 V
1.6 @ 20 V
20
1.0
Ttab ≤ 100°C
MBRM120LT1 MBRM120LT3
0.45 @ 1.0 A 0.36 @ 0.1 A
50
125
0.4 @ 20 V
N/A
30
1.0
TC = 135°C
MBRM130LT1 MBRM130LT3
0.45 @ 1.0 A
50
125
1.0
N/A
40
1.0
Ttab ≤ 100°C
MBRM140T3
0.39 @ 0.1 A 0.55 @ 1.0 A
50
125
0.5 @ 40 V
N/A
20
1.0
TL = 125°C
MBRA120ET3
0.530 @ 1.0 A
40
150
0.010
1.6 @ 100°C
30
1.0
TC ≤ 105°C
MBRA130LT3
0.41 @ 1.0 A 0.47 @ 2.0 A
25
125
1.0 @ 30 V 0.4 @ 15 V
25 @ 30 V
40
1.0
TC ≤ 100°C
MBRA140T3
0.60 @ 1.0 A 0.73 @ 2.0 A
25
125
0.5 @ 40 V 0.1 @ 20 V
10 @ 40 V
60
1.0
TL = 105°C
MBRA160T3
0.51 @ 1.0 A
60
125
0.2
10 @ 125°C
60
1.0
TL = 105°C
SS16 T3
0.51 @ 1.0 A
30
125
0.2
10 @ 125°C
10
2.0
TL = 125°C
MBRA210ET3 K
0.50 @ 2.0 A
150
150
0.050
0.5 @ 100°C
10
2.0
TL = 110°C
MBRA210LT3 K
0.35 @ 2.0 A
230
125
0.70
60 @ 100°C
40
3.0
TC = 100°C
MBRA340T3K
0.45 @ 3.0 A
100
125
0.3
15 @ 40 V
(1)I is total device current capability. O (2)V RRM unless noted (3)V RRM, TJ = 100°C unless noted
K New Product
All devices listed are ON Semiconductor preferred devices
http://onsemi.com 257
Package
CASE 425-04 (SOD-123) Cathode = Band
CASE 498−01 (SOD-123FL)
CASE 457−04 (POWERMITER)
CASE 403D-02 (SMA) Cathode = Notch or Polarity Band
ON Semiconductor Selector Guide − Discrete Devices SCHOTTKY Rectifiers (continued) Table 9. Surface Mount Schottky Rectifiers (continued) Max VF @ iF TC = 25°C (Volts)
IFSM (Amperes)
TJ Max (°C)
Max IR(2) TJ = 25°C (mA)
Max IR(3) (mA)
MBRS120T3
0.55 @ 1.0 A
40
125
1.0
10
MBRS130LT3
0.395 @ 1.0 A
40
125
1.0
10
TL = 115°C
MBRS130T3
0.55 @ 1.0 A
40
125
1.0
10
1.0
TL = 115°C
MBRS140T3
0.6 @ 1.0 A
40
125
1.0
10
40
1.0
TC = 110°C
MBRS140LT3
0.5 @ 1.0 A
40
125
0.4
10
90
1.0
TL = 120°C
MBRS190T3
0.75 @ 1.0 A
50
125
0.5
5.0
100
1.0
TL = 120°C
MBRS1100T3
0.75 @ 1.0 A
40
150
0.5
5.0
40
1.5
TC = 100°C
MBRS1540T3
0.46 @ 1.5 A
40
125
0.8
5.7
30
2.0
TC = 110°C
MBRS230LT3
0.5 @ 2.0 A
40
125
1.0
75 @ 125°C
40
2.0
TC ≤ 95°C
MBRS240LT3
0.43 @ 2.0 A 0.53 @ 4.0 A
25
125
2.0 @ 40 V 0.5 @ 20 V
60 @ 40 V 40 @ 20 V
40
2.0
TC = 103°C
MBRS2040LT3
0.43 @ 2.0 A 0.50 @ 4.0 A
70
125
0.80 @ 40 V 0.10 @ 20 V
20 @ 40 V 6.0 @ 20 V
60
2.0
TL = 95°C
MBRS260T3
0.63 @ 2.0 A
60
125
0.2
10 @ 125°C
40
2.0
TC = 100°C
SS22
0.5 @ 2.0 A
75
125
0.4
5.7 @ 100°C
40
2.0
TC = 100°C
SS24
0.5 @ 2.0 A
75
125
0.4
5.7 @ 100°C
60
2.0
TL = 95°C
SS26
0.63 @ 2.0 A
40
125
0.2
10 @ 125°C
200
3.0
TL = 120°C
MBRS3200T3K
0.84 @ 3.0 A
100
150
5.0 mA
5.0 @ 200 V
20
3.0
TL = 100°C
MBRS320T3
0.50 @ 3.0 A
80
125
2.0
20
30
3.0
TL = 100°C
MBRS330T3
0.50 @ 3.0 A
80
125
2.0
20
40
3.0
TL = 100°C
MBRS340T3
0.525 @ 3.0 A
80
125
2.0
20
60
3.0
TL = 100°C
MBRS360T3
0.74 @ 3.0 A
80
125
0.5
20
100
3.0
TL = 100°C
MBRS3100T3 K
0.79 @ 3.0 A
130
150
0.05
5.0 @ 125°C
200
3.0
TC = 70°C
MBRS3201T3
0.840 @ 3.0 A
100
150
0.005
5.0 @ 150°C
10
4.0
TL = 130°C
MBRS410ET3 K
0.50 @ 4.0 A
250
150
0.15
4.0 @ 100°C
10
4.0
TL = 110°C
MBRS410LT3 K
0.33 @ 4.0 A
150
125
5.0
200 @ 100°C
200
4.0
TL = 70°C
MBRS4201T3
0.860 @ 4.0 A
100
150
0.00035
500 @ 150°C
40
5.0
TC = 105°C
MBRS540T3K
0.5 @ 5.0 A
190
125
0.3
15 @ 40 V
20
3.0
TC = 125°C
MBRD320T4
0.60 @ 3.0 A
75
150
0.2
20 @ 125°C
30
3.0
TC = 125°C
MBRD330T4
0.60 @ 3.0 A
75
150
0.2
20 @ 125°C
40
3.0
TC = 125°C
MBRD340T4
0.60 @ 3.0 A
75
150
0.2
20 @ 125°C
50
3.0
TC = 125°C
MBRD350T4
0.60 @ 3.0 A
75
150
0.2
20 @ 125°C
60
3.0
TC = 125°C
MBRD360T4
0.60 @ 3.0 A
75
150
0.2
20 @ 125°C
20
6.0
TC = 130°C
MBRD620CTT4
0.70 @ 3.0 A
75
150
0.1
15 @ 125°C
30
6.0
TC = 130°C
MBRD630CTT4
0.70 @ 3.0 A
75
150
0.1
15 @ 125°C
40
6.0
TC = 130°C
MBRD640CTT4
0.70 @ 3.0 A
75
150
0.1
15 @ 125°C
VRRM (Volts)
IO(1) (Amperes)
20
1.0
TL = 115°C
30
1.0
TL = 120°C
30
1.0
40
IO Rating Condition
Device
50
6.0
TC = 130°C
MBRD650CTT4
0.70 @ 3.0 A
75
150
0.1
15 @ 125°C
60
6.0
TC = 130°C
MBRD660CTT4
0.70 @ 3.0 A
75
150
0.1
15 @ 125°C
35
8.0
TC = 100°C
MBRD835L
0.40 @ 3.0 A 0.51 @ 8.0 A
100
125
1.4
35
35
10
TC = 90°C
MBRD1035CTL
0.49 @ 10 A
100
125
2.0
130 @ 125°C
(1)I is total device current capability. O (2)V RRM unless noted (3)V RRM, TJ = 100°C unless noted
K New Product
All devices listed are ON Semiconductor preferred devices
http://onsemi.com 258
Package
CASE 403A-03 (SMB) Cathode = Notch or Polarity Band
CASE 403-03 (SMC) Cathode = Notch
1
CASE 369A-13 (DPAK)
4
3
“CT” Suffix
4 1 1
4
3 3
Non-“CT” Suffix
ON Semiconductor Selector Guide − Discrete Devices SCHOTTKY Rectifiers (continued) Table 9. Surface Mount Schottky Rectifiers (continued) Max VF @ iF TC = 25°C (Volts)
IFSM (Amperes)
TJ Max (°C)
Max IR(2) TJ = 25°C (mA)
Max IR(3) (mA)
MBRB1045
0.84 @ 20 A
150
150
0.1
15 @ 125°C
MBRB1545CT
0.84 @ 15 A
150
150
0.1
15 @ 125°C
TC = 110°C
MBRB2060CT
0.95 @ 20 A
150
150
0.15
150 @ 125°C
20
TC = 110°C
MBRB20100CT
0.85 @ 10 A 0.95 @ 20 A
150
150
0.1
6.0 @ 125°C
200
20
TC = 125°C
MBRB20200CT
1.0 @ 20 A
150
150
1.0
50 @ 125°C
15
25
TC = 90°C
MBRB2515L
0.45 @ 25 A
150
100
15
200 @ 70°C
35
25
TC = 110°C
MBRB2535CTL
0.47 @ 12.5 A 0.55 @ 25 A
150
125
10
500 @ 125°C
VRRM (Volts)
IO(1) (Amperes)
IO Rating Condition
10
45
TC = 135°C
45
15
TC = 105°C
60
20
100
Device
Package
1
CASE 418B-04 (D2PAK)
4
3
“CT” Suffix
4
45
25
TC = 130°C
MBRB2545CT
0.82 @ 30 A
150
150
0.2
40 @ 125°C
30
30
TC = 115°C
MBRB3030CT
0.54 @ 15 A 0.67 @ 30 A
300
150
1.2
145 @ 150°C 46 @ 10 V, 150°C
30
30
TC = 95°C
MBRB3030CTL
0.45 @ 15 A 0.51 @ 30 A
150
125
2.0
195 @ 125°C 75 @ 10 V, 125°C
30
40
TC = 110°C
MBRB4030
0.46 @ 20 A 0.55 @ 40 A
300
150
1.0
150 @ 125°C
1
4
3
1 3
Non-“CT” Suffix
(1)I is total device current capability. O (2)V RRM unless noted (3)V RRM, TJ = 100°C unless noted
All devices listed are ON Semiconductor preferred devices
Table 10. Axial Lead Schottky Rectifiers Max VF @ iF TC = 25°C (Volts)
IFSM (Amperes)
TJ Max (°C)
Max IR(2) TL = 25°C (mA)
Max IR(3) TL (mA)
1N5817
0.45 @ 1.0 A
25
125
1.0
10
TA = 55°C RθJA = 80°C/W
1N5818
0.55 @ 1.0 A
25
125
1.0
10
1.0
TA = 55°C RθJA = 80°C/W
1N5819
0.60 @ 1.0 A
25
125
1.0
10
50
1.0
TA = 55°C
MBR150
0.75 @ 1.0 A
25
150
0.5
5.0
60
1.0
TA = 55°C RθJA = 80°C/W
MBR160
0.75 @ 1.0 A
25
150
0.5
5.0
100
1.0
TA = 120°C RθJA = 50°C/W
MBR1100
0.79 @ 1.0 A
50
150
0.5
5.0
20
3.0
TA = 76°C RθJA = 28°C/W
1N5820
0.457 @ 3.0 A
80
125
2.0
20
30
3.0
TA = 71°C RθJA = 28°C/W
1N5821
0.500 @ 3.0 A
80
125
2.0
20
40
3.0
TA = 61°C RθJA = 28°C/W
1N5822
0.525 @ 3.0 A
80
125
2.0
20
40
3.0
TA = 65°C RθJA = 28°C/W
MBR340
0.600 @ 3.0 A
80
150
0.6
20
50
3.0
TA = 65°C
MBR350RL
0.600 @ 3.0 A
80
150
0.6
20
60
3.0
TA = 65°C RθJA = 28°C/W
MBR360RL
0.740 @ 3.0 A
80
150
0.6
20
100
3.0
TA = 100°C RθJA = 28°C/W
MBR3100
0.79 @ 3.0 A
150
150
0.6
20
45
8.0
TL = 75°C
80SQ045N
0.55 @ 8.0 A
140
125
1.0
50 @ 100°C
VRRM (Volts)
IO (Amperes)
IO Rating Condition
20
1.0
TA = 55°C RθJA = 80°C/W
30
1.0
40
Device
Package
CASE 59−10 (DO−41) Plastic
Cathode = Polarity Band
CASE 267-05 (DO−201AD) Plastic
Cathode = Polarity Band
(2)V RRM unless noted (3)V RRM, TJ = 100°C unless
noted All devices listed are ON Semiconductor preferred devices
http://onsemi.com 259
ON Semiconductor Selector Guide − Discrete Devices SCHOTTKY Rectifiers (continued) Table 11. TO-220 Thru−Hole Schottky Rectifiers Max VF @ iF TC = 25°C (Volts)
VRRM (Volts)
IO (Amperes)
IO Rating Condition
35
15
TC = 105°C
MBR1535CT
0.84 @ 15 A
150
Device
Max IR(2) TC = 25°C (mA)
Max IR(3) (mA)
150
0.1
15 @ 125°C
IFSM TJ Max (Amperes) (°C)
45
15
TC = 105°C
MBR1545CT
0.84 @ 15 A
150
150
0.1
15 @ 125°C
100
16
TC = 133°C
MBR16100CT
0.84 @ 16 A
150
175
0.1
5.0 @ 125°C
30
20
TC = 137°C
MBR2030CTL
0.52 @ 10 A 0.58 @ 20 A
150
150
5.0
40
45
20
TC = 135°C
MBR2045CT
0.84 @ 20 A
150
150
0.1
15 @ 125°C
60
20
TC = 133°C
MBR2060CT
0.85 @ 10 A 0.95 @ 20 A
150
150
0.1
6.0 @ 125°C
80
20
TC = 133°C
MBR2080CT
0.95 @ 20 A
150
150
0.1
6.0 @ 125°C
90
20
TC = 133°C
MBR2090CT
0.95 @ 20 A
150
150
0.1
6.0 @ 125°C
100
20
TC = 133°C
MBR20100CT
0.85 @ 10 A 0.95 @ 20 A
150
150
0.1
6.0 @ 125°C
200
20
TC = 125°C
MBR20200CT
1.0 @ 20 A
150
150
1.0
50 @ 125°C
35
25
TC = 95°C
MBR2535CTL
0.55 @ 25 A
150
125
5.0
500 @ 125°C
45
25
TC = 130°C
MBR2545CT
0.82 @ 25 A
150
150
0.2
40 @ 125°C
15
40
TC = 105°C
MBR4015CTL
0.54 @ 25 A
150
125
1.0
400 @ 125°C
250
40
TC = 82°C
MBR40250T
0.097 @ 40 A
150
150
0.03
30 mA @ 125°C
35
7.5
TC = 105°C
MBR735
0.54 @ 40 A
150
150
0.1
15 @ 125°C
45
7.5
TC = 105°C
MBR745
0.84 @ 15 A
150
150
0.1
15 @ 125°C
35
10
TC = 135°C
MBR1035
0.84 @ 20 A
150
150
0.1
15 @ 125°C
45
10
TC = 135°C
MBR1045
0.84 @ 20 A
150
150
0.1
15 @ 125°C
60
10
TC = 133°C
MBR1060
0.80 @ 10 A
150
150
0.1
6.0 @ 125°C
80
10
TC = 133°C
MBR1080
0.80 @ 10 A
150
150
0.1
6.0 @ 125°C
90
10
TC = 133°C
MBR1090
0.8 @ 10 A
150
150
0.1
6.0 @ 125°C
100
10
TC = 133°C
MBR10100
0.80 @ 10 A
150
150
0.1
6.0 @ 125°C
35
16
TC = 125°C
MBR1635
0.63 @ 16 A
150
150
0.2
40 @ 125°C
45
16
TC = 125°C
MBR1645
0.63 @ 16 A
150
150
0.2
40 @ 125°C
15
25
TC = 90°C
MBR2515L
0.45 @ 25 A
150
100
15
200 @ 70°C
250
40
TC = 82°C
MBR40250
0.097 @ 40 A
150
150
0.03
30 @ 125°C
60
20
TC = 133°C
MBRF2060CT
0.95 @ 20 A
150
150
0.15
15 @ 125°C
100
20
TC = 133°C
MBRF20100CT
0.95 @ 20 A
150
150
0.15
15 @ 125°C
200
20
TC = 125°C
MBRF20200CT
1.0 @ 20 A
150
150
1.0
50 @ 125°C
45
25
TC = 125°C
MBRF2545CT
0.82 @ 25 A
150
150
0.2
40 @ 125°C
250
40
TC = 46°C
MBRF40250T
0.097 @ 40 A
150
150
0.03
30 @ 125°C
250
40
TC = 46°C
MBRF40250
0.097 @ 40 A
150
150
0.03
30 @ 125°C
Package
CASE 221A-09 (TO-220AB) 1
2, 4
3
1
1
noted
http://onsemi.com 260
3
4
4
3
1 3
CASE 221D-03 FULL PAK
“CT’’ Suffix 1 2
1 2
3 3
CASE 221E-01 FULL PAK
Non−“CT’’ Suffix 1 3 3
Indicates UL Recognized − File #E69369
2
CASE 221B-04 (TO-220AC)
1 2 (2)V RRM unless noted (3)V RRM, TJ = 100°C unless
4
2
ON Semiconductor Selector Guide − Discrete Devices SCHOTTKY Rectifiers (continued) Table 12. TO-218 and TO-247 Schottky Rectifiers Max VF @ iF TC = 25°C (Volts)
IFSM (Amperes)
TJ Max (°C)
Max IR(2) TC = 25°C (mA)
Max IR(3) (mA)
MBR3045PT
0.76 @ 30 A
200
150
1.0
100 @ 125°C
TC = 125°C
MBR4045PT
0.70 @ 20 A 0.80 @ 40 A
400
150
1.0
50
TC = 125°C
MBR6045PT
0.62 @ 30 A 0.75 @ 60 A
500
150
1.0
50
VRRM (Volts)
IO (Amperes)
IO Rating Condition
45
30
TC = 105°C
45
40
45
60
Device
4
CASE 340D-02 (TO-218AC) 1
1 2, 4
2 3
45
30
TC = 105°C
MBR3045WT
0.76 @ 30 A
200
150
1.0
100 @ 125°C
15
40
TC = 125°C
MBR4015LWT
0.42 @ 20 A 0.50 @ 40 A
400
100
5.0
150 @ 75°C
3
CASE 340L−02 (TO-247)
45
40
TC = 125°C
MBR4045WT
0.70 @ 20 A 0.80 @ 40 A
400
150
1.0
50
45
60
TC = 125°C
MBR6045WT
0.62 @ 30 A 0.75 @ 60 A
500
150
1.0
50
30
70
TC = 100°C
MBR7030WT
0.72 @ 70 A
500
150
5.0
250 @ 100°C
(2)V RRM unless noted (3)V RRM, TJ = 100°C unless
Package
1
1 2, 4
2
3
3
noted
Table 13. POWERTAP II Schottky Rectifiers IFSM (Amperes)
TJ Max (°C)
Max IR(2) TC = 25°C (mA)
Max IR(3) (mA)
0.52 @ 100 A 0.60 @ 200 A
1500
150
5.0
−
MBRP40030CTL
0.50 @ 200 A
1500
150
20
1000 @ 100°C
TC = 100°C
MBRP60035CTL
0.57 @ 300 A
4000
150
10
250
TC = 125°C
MBRP20045CT
0.78 @ 100 A
1500
150
0.5
50 @ 125°C
300
TC = 120°C
MBRP30045CT
0.70 @ 150 A 0.82 @ 300 A
2500
150
0.8
75 @ 125°C
45
400
TC = 100°C
MBRP40045CTL
0.57 @ 200 A
2500
150
10
−
60
200
TC = 125°C
MBRP20060CT
0.800 @ 100 A
1500
150
0.5
50 @ 125°C
60
300
TC = 120°C
MBRP30060CT
0.79 @ 150 A 0.89 @ 300 A
2500
150
0.8
75 @ 125°C
100
400
TC = 100°C
MBRP400100CTL
0.83 @ 200 A
2500
150
6.0
−
VRRM (Volts)
IO(1) (Amperes)
IO Rating Condition
Device
30
200
TC = 125°C
MBRP20030CTL
30
400
TC = 100°C
35
600
45
200
45
(1)I
Max VF @ iF TC = 25°C (Volts)
Package
CASE 357C-03 POWERTAP™ 2 1
1
3
3 2
Cathode = Mounting Plate Anode = Terminal
is total device current capability. (2)V RRM unless noted (3)V RRM, TJ = 100°C unless noted O
UltraSoft Rectifiers Table 14. UltraSoft Rectifiers (For High Speed Rectification) VRRM (Volts)
IO(1) (Amperes)
IO Rating Condition
200
6.0
TC = 145°C
Device
Max VF @ iF TC = 29°C (Volts)
trr (ηSec)
TJ Max (°C)
Max IR(2) TC = 25°C (mA)
Max IR(3) (mA) TJ = 150°C
MSRD620CT
1.2 @ 6.0 A
55
150
5.0
200
Package CASE 369A−13 (DPAK) 1 4
1
3
600
600
8.0
15
TC = 125°C
TC = 125°C
MSR860
MSR1560
1.7 @ 8.0 A
120
150
10 μA
3
1000
CASE 221B−04 Style 1 1
1.8 @ 15 A
45
150
15
5000
4 3 1 3
(1)I
is total device current capability. (2)V RRM unless noted (3)V RRM, TJ = 150°C unless noted O
http://onsemi.com 261
4
4
ON Semiconductor Selector Guide − Discrete Devices Ultrafast Rectifiers Table 15. Surface Mount Ultrafast Rectifiers Max trr (ns)
Max VF @ iF TC = 25°C (Volts)
IFSM (Amperes)
TJ Max (°C)
Max IR(2) TJ = 25°C (μA)
Max IR(4) (μA) Package
MURA105T3
30
0.875 @ 1.0 A
50
175
2.0
50
TL = 155°C
MURA110T3
30
0.875 @ 1.0 A
50
175
2.0
50
TL = 155°C
MURA115T3
35
0.875 @ 1.0 A
40
175
2.0
50
1.0
TL = 155°C
MURA120T3
35
0.875 @ 1.0 A
40
175
2.0
50
300
1.0
TL = 150°C
MURA130T3
35
1.1 @ 1.0 A
35
175
5.0
150
400
1.0
TL = 150°C
MURA140T3
35
1.1 @ 1.0 A
35
175
5.0
150
600
1.0
TL = 145°C
MURA160T3
75
1.25 @ 1.0 A
30
175
5.0
150
50
2.0
TL = 135°C
MURA205T3
30
0.94 @ 2.0 A
50
175
2.0
50
100
2.0
TL = 135°C
MURA210T3
30
0.94 @ 2.0 A
50
175
2.0
50
150
2.0
TL = 135°C
MURA215T3
35
0.95 @ 2.0 A
40
175
2.0
50
200
2.0
TL = 135°C
MURA220T3
35
0.95 @ 2.0 A
40
175
2.0
50
300
2.0
TL = 125°C
MURA230T3
65
1.3 @ 2.0 A
35
175
5.0
150
400
2.0
TL = 125°C
MURA240T3
65
1.3 @ 2.0 A
35
175
5.0
150
600
2.0
TL = 110°C
MURA260T3
75
1.45 @ 2.0 A
30
175
5.0
150
50
1.0
TL = 155°C
MURS105T3
35
0.875 @ 1.0 A
40
175
2.0
50
100
1.0
TL = 155°C
MURS110T3
35
0.875 @ 1.0 A
40
175
2.0
50
150
1.0
TL = 155°C
MURS115T3
35
0.875 @ 1.0 A
40
175
2.0
50
200
1.0
TL = 155°C
MURS120T3
35
0.875 @ 1.0 A
40
175
2.0
50
400
1.0
TL = 150°C
MURS140T3
75
1.25 @ 1.0 A
35
175
5.0
150
600
1.0
TL = 150°C
MURS160T3
75
1.25 @ 1.0 A
35
175
5.0
150
50
2.0
TL = 125°C
MURS205T3
30
0.94 @ 2.0 A
50
175
2.0
50
100
2.0
TL = 125°C
MURS210T3
30
0.94 @ 2.0 A
50
175
2.0
50
200
2.0
TL = 145°C
MURS220T3
35
0.95 @ 2.0 A
40
175
2.0
50
300
2.0
TL = 125°C
MURS230T3
65
1.3 @ 2.0 A
35
175
5.0
150
400
2.0
TL = 125°C
MURS240T3
65
1.3 @ 2.0 A
35
175
5.0
150
600
2.0
TL = 125°C
MURS260T3
75
1.45 @ 2.0 A
35
175
5.0
150
200
3.0
TL = 140°C
MURS320T3
35
0.875 @ 3.0 A
75
175
5.0
150
400
3.0
TL = 130°C
MURS340T3
75
1.25 @ 3.0 A
75
175
10
250
600
3.0
TL = 130°C
MURS360T3
75
1.25 @ 3.0 A
75
175
10
250
200
6.0
TC = 140°C
MURD620CT
35
1.0 @ 3.0 A
50
175
5.0
250 @ 125°C
200
3.0
TC = 158°C
MURD320
35
0.95 @ 3.0 A
75
175
5.0
500 @ 125°C
300
3.0
TC = 140°C
MURD330
50
1.15 @ 3.0 A
90
175
5.0
500
300
3.0
TC = 160°C
MURD330T4 K
50
1.15 @ 3.0 A
75
175
5.0
500
VRRM (Volts)
IO(1) (Amperes)
IO Rating Condition
Device
50
1.0
TL = 155°C
100
1.0
150
1.0
200
Package
CASE 403D−02 SMA
Cathode = Polarity Band
CASE 403A−03 SMB
Cathode = Polarity Band
CASE 403−03 SMC Cathode = Notch 1
4
3
400
3.0
TC = 160°C
MURD340T4 K
50
1.15 @ 3.0 A
75
175
5.0
500
520
5.0
TC = 160°C
MURD550PF
95
1.15 @ 5.0 A
75
175
5.0
400
400
8.0
TC = 120°C
MURHB840CT
28
2.2 @ 4.0 A
100
175
10
500
“CT” Suffix
DPAK 4 1
1 3
Non-“CT” Suffix 1
8.0
TC = 120°C
MURHB860CT
35
2.8 @ 4.0 A
100
175
10
500
200
16
TC = 150°C
MURB1620CT
35
0.975 @ 8.0 A
100
175
5.0
250
4
3
D2PAK 600
4
3
“CT” Suffix
CASE 418B−04 4
1
4
3
600
16
TC = 150°C
MURB1660CT
60
1.5 @ 8.0 A
100
(1)I
O is total device current capability. (2)V RRM unless noted (4)V RRM, TJ = 150°C unless noted
K New Product All devices listed are ON Semiconductor preferred devices
http://onsemi.com 262
175
10
500
1 3
Non-“CT” Suffix
ON Semiconductor Selector Guide − Discrete Devices Ultrafast Rectifiers (continued) Table 16. Axial Lead Ultrafast Rectifiers Max trr (ns)
Max VF @ iF TC = 25°C (Volts)
IFSM (Amperes)
TJ Max (°C)
Max IR(2) TJ = 25°C (μA)
Max IR(4) (μA)
MUR105
35
0.875 @ 1.0 A
35
175
2.0
50
TA = 130°C
MUR110
35
0.875 @ 1.0 A
35
175
2.0
50
TA = 130°C
MUR115
35
0.875 @ 1.0 A
35
175
2.0
50
1.0
TA = 130°C RθJA = 50°C/W
MUR120
25
0.875 @ 1.0 A
35
175
2.0
50
300
1.0
TA = 120°C
MUR130
75
1.25 @ 1.0 A
35
175
5.0
150
400
1.0
TA = 120°C
MUR140
75
1.25 @ 1.0 A
35
175
5.0
150
600
1.0
TA = 120°C RθJA = 50°C/W
MUR160
50
1.25 @ 1.0 A
35
175
5.0
150
VRRM (Volts)
IO (Amperes)
IO Rating Condition
50
1.0
TA = 130°C
100
1.0
150
1.0
200
Device
800
1.0
TA = 95°C
MUR180E
75
1.75 @ 1.0 A
35
175
10
600 @ 100°C
1000
1.0
TA = 95°C RθJA = 50°C/W
MUR1100E
75
1.75 @ 1.0 A
35
175
10
600 @ 100°C
200
2.0
TA = 90°C
MUR220
35
0.95 @ 2.0 A
35
175
2.0
50
400
2.0
TA = 85°C
MUR240
65
1.15 @ 2.0 A
35
175
5.0
150
600
2.0
TA = 60°C
MUR260
75
1.35 @ 2.0 A
35
175
5.0
150
1000
2.0
TA = 35°C
MUR2100E
100
2.2 @ 2.0 A
35
175
10
600
50
4.0
TA = 80°C
MUR405
35
0.89 @ 2.0 A
125
175
5.0
150
100
4.0
TA = 80°C
MUR410
35
0.89 @ 2.0 A
125
175
5.0
150
150
4.0
TA = 80°C
MUR415
35
0.89 @ 2.0 A
125
175
5.0
150
200
4.0
TA = 80°C RθJA = 28°C/W
MUR420
25
0.875 @ 3.0 A
125
175
5.0
150
400
4.0
TA = 40°C
MUR440
75
75
175
10
250
520
4.0
TC = 65°C
MUR450PF
95
1.15 @ 4.0 A
85
175
5.0
400
600
4.0
TA = 40°C RθJA = 28°C/W
MUR460
50
1.25 @ 3.0 A
70
175
10
250
800
4.0
TA = 35°C
MUR480E
75
1.75 @ 3.0 A
70
175
25
900
1000
4.0
TA = 35°C RθJA = 28°C/W
MUR4100E
75
1.75 @ 3.0 A
70
175
25
900
520
5.0
TC = 65°C
MUR550APF
95
1.15 @ 5.0 A
85
175
5.0
400
Package
CASE 59-10 (DO−41) Plastic Cathode = Polarity Band
CASE 267-05 (DO−201AD) Plastic Cathode = Polarity Band
(2)V RRM
unless noted (4)VRRM, TJ = 150°C unless noted
http://onsemi.com 263
ON Semiconductor Selector Guide − Discrete Devices Ultrafast Rectifiers (continued) Table 17. TO-220 Ultrafast and MEGAHERTZ™ Rectifiers Max trr (ns)
Max VF @ iF TC = 25°C (Volts)
IFSM (Amperes)
TJ Max (°C)
Max IR(2) TC = 25°C (μA)
Max IR(4) (μA)
MUR620CT
35
0.975 @ 3.0 A
75
175
5.0
250
TC = 120°C
MURH840CT
28
2.2 @ 4.0 A
100
175
10
500
TC = 120°C
MURH860CT
35
2.8 @ 4.0 A
100
175
10
500
VRRM (Volts)
IO(1) (Amperes)
IO Rating Condition
200
6.0
TC = 130°C
400
8.0
600
8.0
Device
Package CASE 221A-09 (TO-220AB) 1
100
16
TC = 150°C
MUR1610CT
35
0.975 @ 8.0 A
100
175
5.0
250
150
16
TC = 150°C
MUR1615CT
35
0.975 @ 8.0 A
100
175
5.0
250
200
16
TC = 150°C
MUR1620CT
35
0.975 @ 8.0 A
100
175
5.0
250
1
3 1
2
3
2, 4
200
16
TC = 160°C
MUR1620CTR
85
1.2 @ 8.0 A
100
175
5.0
500
3
400
16
TC = 150°C
MUR1640CT
60
1.30 @ 8.0 A
100
175
10
250
600
16
TC = 150°C
MUR1660CT
60
1.5 @ 8.0 A
100
175
10
500
MUR1620CTR Only
520
5.0
TC = 160°C
MUR550PF
95
1.15 @ 5.0 A
100
175
5.0
400
50
8.0
TC = 150°C
MUR805
35
0.975 @ 8.0 A
100
175
5.0
250
100
8.0
TC = 150°C
MUR810
35
0.975 @ 8.0 A
100
175
5.0
250
150
8.0
TC = 150°C
MUR815
35
0.975 @ 8.0 A
100
175
5.0
250
200
8.0
TC = 150°C
MUR820
35
0.975 @ 8.0 A
100
175
5.0
250
400
8.0
TC = 150°C
MUR840
50
1.30 @ 8.0 A
100
175
10
500
600
8.0
TC = 150°C
MUR860
50
1.50 @ 8.0 A
100
175
10
500
800
8.0
TC = 150°C
MUR880E
75
1.80 @ 8.0 A
100
175
25
500 @ 100°C
1000
8.0
TC = 150°C
MUR8100E
75
1.80 @ 8.0 A
100
175
25
500 @ 100°C
100
15
TC = 150°C
MUR1510
35
1.05 @ 15 A
200
175
10
500
150
15
TC = 150°C
MUR1515
35
1.05 @ 15 A
200
175
10
500
200
15
TC = 150°C
MUR1520
35
1.05 @ 15 A
200
175
10
500
400
15
TC = 150°C
MUR1540
60
1.25 @ 15 A
150
175
10
500
600
15
TC = 145°C
MUR1560
60
1.50 @ 15 A
150
175
10
1000
200
20
TC = 125°C
MUR2020R
95
1.10 @ 20 A
250
175
50
1000
200
16
TC = 150°C
MURF1620CT
35
0.975 @ 8.0 A
100
150
5.0
250
600
16
TC = 150°C
MURF1660CT
60
1.5 @ 8.0 A
100
175
10
500
600
8.0
TC v 120°C
MURHF860CT
35
2.8 @ 4.0 A
100
150
10
500
(1)I
O is total device capability (2)V RRM unless noted
Indicates UL Recognized − File #E69369
(4)VRRM, TJ = 150°C unless noted
http://onsemi.com 264
4
2, 4
CASE 221B-04 (TO-220AC) 4
1 4 3
1 3
CASE 221D-03 (TO−220) FULL PAK
ON Semiconductor Selector Guide − Discrete Devices Ultrafast Rectifiers (continued) Table 18. TO-218 and TO-247 Ultrafast Rectifiers VRRM (Volts) 200
IO (Amperes) 30
IO Rating Condition TC = 145°C
Max trr (ns)
Device MUR3020WT
35
Max VF @ iF TC = 25°C (Volts)
IFSM (Amperes)
1.05 @ 15 A
Max IR(2) TJ = 25°C (μA)
TJ Max (°C)
200
175
Max IR(4) (mA)
Package
0.5
CASE 340L−02 (TO-247)
10
1 2, 4 3
600
30
TC = 145°C
MUR3060WT
60
1.70 @ 15 A
150
175
10
1.0
200
30
TC = 150°C
MUR3020PT
35
1.05 @ 15 A
200
175
10
0.5
400
30
TC = 150°C
MUR3040PT
60
1.25 @ 15 A
150
175
10
0.5
1
2
3
CASE 340D-02 (TO-218AC) 2, 4 3
600
30
TC = 145°C
MUR3060PT
60
1.50 @ 15 A
150
175
10
4
1 1
1.0
2 3
(2)V RRM
unless noted (4)VRRM, TJ = 150°C unless noted
Table 19. POWERTAP II Ultrafast Rectifiers VRRM (Volts)
IO(1) (Amperes)
IO Rating Condition
200
200
TC = 130°C
Device MURP20020CT
Max trr (ns)
Max VF @ iF TC = 25°C (Volts)
IFSM (Amperes)
TJ Max (°C)
Max IR(2) TJ = 25°C (μA)
Max IR(4) (mA)
50
1.00 @ 100 A
800
175
150
1.0 @ 125°C
Package CASE 357C-03 POWERTAP™ 2 1
400
200
TC = 100°C
MURP20040CT
50
1.30 @ 100 A
800
175
50
0.5 @ 125°C
1 3
3 2
Cathode = Mounting Plate Anode = Terminal (1)I
O is total device current capability. (2)V RRM unless noted (4)V RRM, TJ = 150°C unless noted
http://onsemi.com 265
ON Semiconductor Selector Guide − Discrete Devices Fast Recovery Rectifiers/General Purpose Rectifiers Table 20. Fast Recovery Rectifiers/General Purpose Rectifiers
Device
Max VF @ iF TJ = 25°C (Volts)
Max trr (ns)
IFSM (Amperes)
TJ Max (°C)
Max IR(2) TJ = 25°C (μA)
Max IR(3) (μA)
TL = 118°C
MRS1504T3
1.04 @ 1.5 A
−
50
150
1.0
340
1.0
TL = 150°C
MRA4003T3
1.1 @ 1.0 A
−
30
175
10
50
1.0
TL = 150°C
MRA4004T3
1.1 @ 1.0 A
−
30
175
10
50
600
1.0
TL = 150°C
MRA4005T3
1.1 @ 1.0 A
−
30
175
10
50
800
1.0
TL = 150°C
MRA4006T3
1.1 @ 1.0 A
−
30
175
10
50
1000
1.0
TL = 150°C
MRA4007T3
1.1 @ 1.0 A
−
30
175
10
50
VRRM (Volts)
IO (Amperes)
IO Rating Condition
400
1.5
300 400
50
1.0
TA = 75°C
1N4001RL
1.1 @ 1.0 A
−
30
150
10
50
100
1.0
TA = 75°C
1N4002RL
1.1 @ 1.0 A
−
30
150
10
50
200
1.0
TA = 75°C
1N4003RL
1.1 @ 1.0 A
−
30
150
10
50
400
1.0
TA = 75°C
1N4004RL
1.1 @ 1.0 A
−
30
150
10
50
600
1.0
TA = 75°C
1N4005RL
1.1 @ 1.0 A
−
30
150
10
50 50
800
1.0
TA = 75°C
1N4006RL
1.1 @ 1.0 A
−
30
150
10
1000
1.0
TA = 75°C
1N4007RL
1.1 @ 1.0 A
−
30
150
10
50
50
1.0
TA = 75°C
1N4933RL
1.2 @ 1.0 A
200
30
150
5.0
100
100
1.0
TA = 75°C
1N4934RL
1.2 @ 1.0 A
200
30
150
5.0
100
200
1.0
TA = 75°C
1N4935RL
1.2 @ 1.0 A
200
30
150
5.0
100
400
1.0
TA = 75°C
1N4936RL
1.2 @ 1.0 A
200
30
150
5.0
100
600
1.0
TA = 75°C
1N4937RL
1.2 @ 1.0 A
200
30
150
5.0
100
50
3.0
TL = 105°C
1N5400RL
1.2 @ 9.4 A
−
200
150
10
500 @ 150°C
100
3.0
TL = 105°C
1N5401RL
1.2 @ 9.4 A
−
200
150
10
500 @ 150°C
200
3.0
TL = 105°C
1N5402RL
1.2 @ 9.4 A
−
200
150
10
500 @ 150°C
400
3.0
TL = 105°C
1N5404RL
1.2 @ 9.4 A
−
200
150
10
500 @ 150°C
600
3.0
TL = 105°C
1N5406RL
1.2 @ 9.4 A
−
200
150
10
500 @ 150°C
800
3.0
TL = 105°C
1N5407RL
1.2 @ 9.4 A
−
200
150
10
500 @ 150°C
1000
3.0
TL = 105°C
1N5408RL
1.2 @ 9.4 A
−
200
150
10
500 @ 150°C
200
3.0
TA = 80°C(8)
MR852RL
1.25 @ 3.0 A
200
100
150
10
150
400
3.0
TA = 80°C(8)
MR854RL
1.25 @ 3.0 A
200
100
150
10
150
600
3.0
TA = 80°C(8)
MR856RL
1.25 @ 3.0 A
200
100
150
10
150
50
6.0
TA = 60°C RθJA = 25°C/W
MR750RL
1.25 @ 100 A
−
400
175
25
1000
100
6.0
TA = 60°C RθJA = 25°C/W
MR751RL
1.25 @ 100 A
−
400
175
25
1000
200
6.0
TA = 60°C RθJA = 25°C/W
MR752RL
1.25 @ 100 A
−
400
175
25
1000
400
6.0
TA = 60°C RθJA = 25°C/W
MR754RL
1.25 @ 100 A
−
400
175
25
1000
600
6.0
TA = 60°C RθJA = 25°C/W
MR756RL
1.25 @ 100 A
−
400
175
25
1000
1000
6.0
TA = 60°C RθJA = 25°C/W
MR760RL
1.25 @ 100 A
−
400
175
25
1000
200
25
TC = 150°C
MR2502
1.18 @ 78.5 A
−
400
175
100
500
400
25
TC = 150°C
MR2504
1.18 @ 78.5 A
−
400
175
100
500
1000
25
TC = 150°C
MR2510
1.18 @ 78.5 A
−
400
175
100
500
250
32
TC = 150°C
TRA3225
1.15 @ 100 A
−
500
175
10
250
250
25
TC = 150°C
TRA2525
1.18 @ 100 A
−
400
175
10
250
(2)V RRM unless noted (3)V RRM, TJ = 100°C unless noted (7)Package Size: 0.120” max diameter
(8)Must
be derated for reverse power dissipation. See data sheet. Transient Suppressor: 24−32 volts avalanche voltage.
(9)Overvoltage
by 0.260” length.
http://onsemi.com 266
Package CASE 403A-03 SMB
CASE 403B-02 SMA
Cathode = Notch
CASE 59-10(7) (DO−41) Plastic
Cathode = Polarity Band
CASE 267-05 (DO−201AD) Plastic
Cathode = Polarity Band
CASE 194-04 Plastic
Cathode indicated by diode symbol
CASE 193-04 Plastic
Cathode = Polarity Band
ON Semiconductor Selector Guide − Discrete Devices Fast Recovery Rectifiers/General Purpose Rectifiers (continued) Table 21. Overvoltage Transient Suppressors VRRM (Volts)
VBR(1) (Volts)
VBR (Volts)
IO (Amperes)
23
24−32
40(4)
6.0 TL = 125°C
MR2520L
20
24−32
40(2)
6.0 TC = 125°C
20
24−32
40(3)
23
24−32
40(3)
Max VF TJ = 25°C (Volts)
IFSM (Amperes)
TJ Max (°C)
IRSM (Amperes)
Max IR(6) (μA)
1.25 IF = 100A
400
175
58(5)
10
MR2535L
1.1 IF = 100A
400
175
62(5)
0.2
32 TC = 150°C
TRA2532
1.18 IF = 100A
500
175
80(5)
10
32 TC = 150°C
MR2835SK
1.1 IF = 100A
400
175
62(5)
5.0 @ 20 V
Device
Package CASE 194−04 Plastic
Cathode = Diode Symbol CASE 193-04 Plastic
Cathode = Polarity Band CASE 460−02 Top Can
Cathode = Terminal (1)At
Ir = 100 mA, 25°C (2)At Ir = 90 A, Tc = 150°C, PW = 80 μS (3)At Ir = 80 A, Tc = 85°C, PW = 80 μS (4)At Ir = 80 A, Tc = 25°C, PW = 80 μS
(5)Time
Constant = 10 mS, 25°C (6)At V RRM, Tj = 25°C unless noted
http://onsemi.com 267
ON Semiconductor Selector Guide − Discrete Devices
Thyristors, Triggers and Surge Suppressors
In Brief . . . Page
ON Semiconductor’s broad line of Thyristors includes . . . • A full line of Silicon Controlled Rectifiers (SCR’s) covering a forward current range of 0.8 to 25 amps and blocking voltages from 30 volts to 800 volts. Available in a choice of six different plastic packages in both through hole and surface mount, for space saving requirements. • An extensive line of Triacs (bidirectional devices) from 0.6 to 16 amps with blocking voltages from 200 to 800 volts. Like the SCR’s, the Triacs are available in a choice of six different plastic packages. • A new line of Thyristor Surge Suppressors in the surface mount SMB package covering surge currents of 50 and 100 amps, with break over voltages from 80 to 400 volts. • Trigger devices, including Sidacs and PUT’s (Programmable Unijunction Transistors). Trigger devices are available in both the axial lead and TO−92 packages.
SCRs: Silicon Controlled Rectifiers . . . . . . . . . . . . 269 TRIACs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272 Surge Suppressors and Triggers . . . . . . . . . . . . . . 275
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ON Semiconductor Selector Guide − Discrete Devices
SCRs Silicon Controlled Rectifiers Style 4 K A
A K K G
TO−92 (Note 1) (TO−226AA) Case 029 Style 10
0.8
30
2N5060
60
2N5061
100
2N5062
200
2N5064
100
MCR100−3
200
MCR100−4
400
MCR100−6
600
MCR100−8
200
SOT−223 Case 318E Style 10
AK
TO−225AA (TO−126) Case 077 Style 2
G A
K
D−PAK T4 = Case 369C Style 4 & 5
MCR08BT1
600
4.0
A
G G
Blocking Voltage VDRM, VRRM (Volts)
G
Style 5
A
On−State RMS Current IT(RMS) (Amps)
1.5
A
A
Surge Current ITSM (Amps) 60 Hz
Max IGT (mA)
Max VGT (Volts)
10
0.2
0.8
8.0
0.2
0.8
15
0.2
0.8
20
0.2
0.8
25
0.2
1.0
25
0.1
0.8
MCR08MT1
400
MCR22−6
600
MCR22−8
200
C106B
400
C106D C106D1
600
C106M C106M1
400
MCR106−6
600
MCR106−8
100
MCR703AT4 (Note 2)
400
MCR706AT4 (Note 2)
600
MCR708AT4 (Note 2)
400
MCR716T4 (Note 3)
600
MCR718T4 (Note 3)
1. See TO−92 data sheets for complete device suffix packaging ordering options. RLRA, RLRE, RL, & RL1 suffixes: Radial Tape and Reel RLRM & ZL1 suffixes: Radial Tape and Ammo Pack 2. Denotes pkg style 5 3. Denotes pkg style 4 Shaded devices denote sensitive gate SCR’s
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Lead Identification A = Anode K = Cathode G = Gate
ON Semiconductor Selector Guide − Discrete Devices
SCRs (continued) A
A CASE 369C
CASE 369D
On−State RMS Current IT(RMS) (Amps)
Blocking Voltage VDRM, VRRM (Volts)
D−PAK T4 = Case 369C −001 = Case 369D Style 4
8.0
600
MCR8DCMT4
800
MCR8DCNT4
K A G
K A G
TO−220AB Case 221A−09 Style 3
400
MCR8SD
600
MCR8SM
800
MCR8SN
800
MCR8N
600
MCR8DSMT4
800
MCR8DSNT4
100
MCR72−3
400
MCR72−6
600
MCR72−8
50
MCR218−2
200
MCR218−4
400 10
Max IGT (mA)
Max VGT (Volts)
80
15
1.0
80
0.2
1.0
80
15
1.0
90
0.2
1.0
100
0.2
1.5
100
25
1.5
100
8.0
0.8
100
0.2
1.0
100
20
1.0
100
30
1.5
MCR218−6
400
MCR12LD
600
MCR12LM
800 12
TO−220AB Case 221A−07 Style 3
Surge Current ITSM (Amps) 60 Hz
MCR12LN
600
MCR12DSMT4
800
MCR12DSNT4
800
MCR12DSN−001
600
MCR12DCMT4
800
MCR12DCNT4
400
MCR12D
600
MCR12M
800
MCR12N
50
MCR68−2
UL logo indicates UL Recognized File #E69369
Lead Identification A = Anode K = Cathode G = Gate
Shaded devices denote sensitive gate SCR’s
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ON Semiconductor Selector Guide − Discrete Devices
SCRs (continued) A
A
K A G
On−State RMS Current IT(RMS) (Amps) 12
Blocking Voltage VDRM, VRRM (Volts)
K A G
TO−220AB Case 221A−09 Style 3
Max VGT (Volts)
100
30
1.5
160
20
1.0
160
30
1.5
300
30
1.0
300
30
1.5
50
2N6394 2N6395
400
2N6397
800
2N6399 MCR16N
50
2N6400
100
2N6401
200
2N6402
400
2N6403
600
2N6404
800 25
Max IGT (mA)
100 800 16
TO−220AB Case 221A−07 Style 3
Surge Current ITSM (Amps) 60 Hz
2N6405
400
MCR25D
600
MCR25M
800
MCR25N
50
2N6504
100
2N6505
400
2N6507
600
2N6508
800
2N6509
50
MCR69−2
100
MCR69−3
UL logo indicates UL Recognized File #E69369
Lead Identification A = Anode K = Cathode G = Gate
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ON Semiconductor Selector Guide − Discrete Devices
TRIACs (Bidirectional Devices) MT2
MT1 G MT2
CASE 369C
MT1 MT2 G G
MT2 MT1
CASE 369D
Max IGT (mA) On−State RMS Current IT(RMS) (Amps)
Blocking Voltage VDRM, VRRM (Volts)
TO−92 (Note 4) (TO−226AA) Case 029 Style 12
0.6
200
MAC97A4
400
MAC97A6
0.8
Surge Current ITSM (Amps) 60 Hz
Q1
Q2
Q3
Q4
8.0
5.0
5.0
5.0
7.0
MAC997B6
3.0
3.0
3.0
5.0
MAC997A8
5.0
5.0
5.0
7.0
MAC997B8
3.0
3.0
3.0
5.0
10
10
10
10 10
600
MAC97A8
400
MAC997A6
600
SOT−223 Case 318E Style 11
200
MAC08BT1
600
MAC08MT1
TO−225AA (TO−126) Case 077 Style 5
D−PAK T4 = Case 369C −001 = Case 369D Style 6
2.5
200
T2322B
25
10
10
10
4.0
200
2N6071A
30
400 600
5.0
5.0
5.0
10
2N6071B
3.0
3.0
3.0
5.0
2N6073A
5.0
5.0
5.0
10
2N6073B
3.0
3.0
3.0
5.0
2N6075A
5.0
5.0
5.0
10
2N6075B
3.0
3.0
3.0
5.0
3.0
3.0
3.0
5.0
5.0
5.0
5.0
10
MAC4DLMT4 (Note 5)
40
MAC4DLM−1 (Note 6) MAC4DHMT4 (Note 5) MAC4DHM−1 (Note 6) 4. See TO−92 data sheets for complete device suffix packaging ordering options. RLRA, RLRE, RL, & RL1 suffixes: Radial Tape and Reel RLRM & ZL1 suffixes: Radial Tape and Ammo Pack 5. Denotes SMT package 6. Denotes straight lead package Shaded devices denote sensitive gate Triacs
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Lead Identification MT1 = Main Terminal 1 MT2 = Main Terminal 2 G = Gate
ON Semiconductor Selector Guide − Discrete Devices
TRIACs (Bidirectional Devices) (continued) MT2
MT2 CASE 369C
MT1 MT2 CASE 369D
G
MT1 MT2 G
Max IGT (mA) On−State RMS Current IT(RMS) (Amps)
Blocking Voltage VDRM, VRRM (Volts)
4.0
600
D−PAK T4 = Case 369C −001 = Case 369D Style 6
TO−220AB Case 221A−09 Style 4
TO−220AB Case 221A−07 Style 4
MAC4DSMT4 (Note 7)
Surge Current ITSM (Amps) 60 Hz
Q1
Q2
Q3
Q4
40
10
10
10
−
40
35
35
35
−
MAC4DSM−1 (Note 8) 800
MAC4DSNT4 (Note 7) MAC4DSN−1 (Note 8)
600
800
MAC4DCMT4 (Note 7) MAC4DCM−1 (Note 8)
MAC4M
MAC4DCNT4 (Note 7)
MAC4N
MAC4DCN−1 (Note 8) 6.0
400
8.0
400
MAC8SD
T2500D
600
MAC8SM
800
MAC8SN
400
MAC8D
600
MAC8M
800
MAC8N
400
MAC9D
600
MAC9M
800
MAC9N
200
MAC228A4
400
MAC228A6
600
MAC228A8
800
MAC228A10
600
2N6344
400
T2800D
60
25
60
25
60
70
5.0
5.0
5.0
−
80
35
35
35
−
50
50
50
−
5.0
5.0
5.0
10
50
75
50
75
25
60
25
60
100
7. Denotes SMT package 8. Denotes straight lead package UL logo indicates UL Recognized File #E69369
Lead Identification MT1 = Main Terminal 1 MT2 = Main Terminal 2 G = Gate
Shaded devices denote sensitive gate Triacs
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ON Semiconductor Selector Guide − Discrete Devices
TRIACs (Bidirectional Devices) (continued) MT2
MT2
MT1 MT2
G
MT1 MT2 G
Max IGT (mA) On−State RMS Current IT(RMS) (Amps)
Blocking Voltage VDRM, VRRM (Volts)
10 12
TO−220AB Case 221A−07 Style 4
Surge Current ITSM (Amps) 60 Hz
Q1
Q2
Q3
Q4
600
MAC210A8
100
50
50
50
75
800
MAC210A10 90
5.0
5.0
5.0
−
100
50
50
50
−
35
35
35
−
50
50
50
75
50
75
50
75
120
5.0
5.0
5.0
−
150
35
35
35
−
50
50
50
75
50
50
50
−
35
35
35
−
TO−220AB Case 221A−09 Style 4
600
MAC12SM
800
MAC12SN
400
MAC12HCD
600
MAC12HCM
800
MAC12HCN
400
MAC12D
600
MAC12M
800
MAC12N
600
MAC212A8
800
MAC212A10
600
2N6344A
600
2N6348A
800 15
2N6349A
400
MAC15SD
600
MAC15SM
800
MAC15SN
600
MAC15M
800
MAC15N
400
MAC15A6
600
MAC15A8
800 16
MAC15A10
400
MAC16D
600
MAC16M
800
MAC16N
600
MAC16CM
800
MAC16CN
UL logo indicates UL Recognized File #E69369
Lead Identification MT1 = Main Terminal 1 MT2 = Main Terminal 2 G = Gate
Shaded devices denote sensitive gate Triacs
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ON Semiconductor Selector Guide − Discrete Devices
Surge Suppressors and Triggers Thyristor Surge Suppressors (Bidirectional Devices) (
MT1
)
MT2
SMB Case 403C
Maximum Breakover Voltage VBO (Volts)
Minimum Holding Current IH (mA)
170
MMT05B230T3
265
150
200
MMT05B260T3
320
270
MMT05B310T3
365
300
MMT05B350T3
400
200
MMT08B260T3
320
270
MMT08B310T3
365
300
MMT08B350T3
400
170
MMT10B230T3
265
200
MMT10B260T3
320
270
MMT10B310T3
365
300
MMT10B350T3
400
Surge Current IPPS1 10 x 1000 μsec (Amps)
Maximum Off−State Voltage (Volts)
50
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100
150
General Description
These Thyristor Surge Protector devices help prevent overvoltage damage to sensitive circuits caused by lightening, induction, and power line crossing surges. They are breakover triggered crowbar protectors with turn off occurring when the surge current falls below the holding current value.
150
High Voltage Bidirectional Triggers: Sidacs
MT2
MT2
MT1
(
On−State RMS Current IT(RMS) (Amps)
DO−41 Case 059A
0.9
)
MT1
(
) Breakover Voltage Range VBO (Volts)
Surge Current ITSM (Amps) 60 Hz
MKP1V120RL
110−130
4.0
MKP1V130RL
120−140
MKP1V160RL
150−170
Surmetic 50 Case 267 Style 2
ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ MKP1V240, RL
1.0
220−250
MKP3V120, MKP3V240, RL
220−250
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20
General Description
High voltage trigger devices similar in operation to triacs. Upon reaching the breakover voltage in either direction, the devices switch to a low voltage on state.
ON Semiconductor Selector Guide − Discrete Devices
Surge Suppressors and Triggers (continued) Thyristor Triggers: Programmable Unijunction Transistors (PUT’s)
A G
K
IP
IV
RG = 10K ohm (μ Amps max.)
RG = 1M ohm (μ Amps max.)
TO−92 (Note 9) (TO−226AA) Case 029 Style 16
5.0
2.0
2N6027
70
50
1.0
0.15
2N6028
25
25
RG = 10K ohm (μ Amps min.)
RG = 1M ohm (μ Amps max.)
ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁ UL logo indicates UL Recognized File #E116110 9. See TO−92 data sheets for complete device suffix packaging ordering options. RLRA, RLRE, RL, & RL1 suffixes: Radial Tape and Reel RLRM & ZL1 suffixes: Radial Tape and Ammo Pack
General Description
Similar to unijunction transistors, except that IP, IV, and intrinsic voltage are programmable (adjustable) by means of external voltage divider.
Lead Identification: Suppressor/Sidac MT1 = Main Terminal 1 MT2 = Main Terminal 2
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Lead Identification: PUT A = Anode K = Cathode G = Gate
Power MOSFET Products
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ON Semiconductor Selector Guide − Power MOSFET Products
Power MOSFET Products In Brief . . .
ÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑ ÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ ÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑÑ ÑÑÑ Product Summary Product
MOSFET
Ignition IGBT
SmartDiscretet
Description
Power and Small Signal (8.0 to 250 V)
Page
Surface Mount
280
Through−Hole
286
Insulated Gate Bipolar Transistor (350, 400, 410 and 430 V)
287
Integrated MOSFET and passive components with additional features such as voltage and current sense and overload protection.
288
What’s New For . . .
Computing − ON Semiconductor has added to its portfolio of 25 V Power MOSFETs for switching and power management applications in Desktop PCs. New products include NTD78N03R, NTD78N03, NTD65N03R, and NTD50N03R. This new suite of products are low side and high side MOSFETs for VCORE DC−DC converters suitable for improved efficiency and rugged performance. Additionally, ON Semiconductor has expanded its portfolio of devices in SO−8 FL and SO−8 for VCORE applications in notebook computers. These devices include the NTMFS4707N, NTMFS4708N in SO−8 FL and NTMS4704N, NTMFS4705N, NTMS4706N, and NTMS4107N in SO−8. Portable (Hand−Held) − Further expanding its portfolio of industry−leading Trench technology devices, ON Semiconductor today introduced eight new N−channel and P−channel, low voltage Trench MOSFETs in the SOT−563 and SC−89 1.6 x 1.6 mm packages. These devices reduce resistance between drain and source RDS(on) to improve overall power circuit efficiency by 30 percent in portable products such as cell phones, MP−3, and digital cameras when compared to similarly packaged competitive solutions. Automotive and Industrial − ON Semiconductor has released a line of low−side protected MOSFETs with various levels of integrated protection. Fully featured products such as NID5001N protect against short circuit and overvoltage events while clamped MOSFETs such as NID9N05CL and NUD3160 offer overvoltage protection. How To Use This Selector Guide
1. Choose the product type (MOSFET, Ignition IGBT, or SmartDiscretet). 2. Choose the package type (ie., DPAK, ChipFETt). 3. Choose the channel polarity (N, P, or Complementary). 4. Choose a voltage level (VDSS − Drain−Source Voltage). 5. View the electrical specifications* and find the device number.
Page Power MOSFET Products . . . . . . . . . . . . . . . . . . . 279 SC−75 N−Channel . . . . . . . . . . . . . . . . . . . . . . . 280 SC−75 P−Channel . . . . . . . . . . . . . . . . . . . . . . . 280 SC−89 N−Channel . . . . . . . . . . . . . . . . . . . . . . . 280 SC−89 P−Channel . . . . . . . . . . . . . . . . . . . . . . . 280 SOT−563 N−Channel . . . . . . . . . . . . . . . . . . . . 280 SOT−563 P−Channel . . . . . . . . . . . . . . . . . . . . . 280 SOT−563 Complementary . . . . . . . . . . . . . . . . 280 SC−70 N−Channel . . . . . . . . . . . . . . . . . . . . . . . 280 SC−70 P−Channel . . . . . . . . . . . . . . . . . . . . . . . 280 SC−88 N−Channel . . . . . . . . . . . . . . . . . . . . . . . 280 SC−88 P−Channel . . . . . . . . . . . . . . . . . . . . . . . 280 SC−88 Complementary . . . . . . . . . . . . . . . . . . . 281 SC−88 Integrated Load Switch P−Channel . . 281 ChipFETt N−Channel . . . . . . . . . . . . . . . . . . . 281 ChipFET P−Channel . . . . . . . . . . . . . . . . . . . . . 281 ChipFET Complementary . . . . . . . . . . . . . . . . . 281 ChipFET FETKYt N−Channel . . . . . . . . . . . . 281 ChipFET FETKY P−Channel . . . . . . . . . . . . . . 281 SOT−23 N−Channel . . . . . . . . . . . . . . . . . . . . . . 281 SOT−23 P−Channel . . . . . . . . . . . . . . . . . . . . . . 282 TSOP−6 N−Channel . . . . . . . . . . . . . . . . . . . . . 282 TSOP−6 P−Channel . . . . . . . . . . . . . . . . . . . . . 282 TSOP−6 Integrated Load Switch P−Channel . 282 Micro8t Leadless N−Channel . . . . . . . . . . . . . 282 Micro8 P−Channel . . . . . . . . . . . . . . . . . . . . . . . 282 TSSOP−8 N−Channel . . . . . . . . . . . . . . . . . . . . 282 TSSOP−8 P−Channel . . . . . . . . . . . . . . . . . . . . 282 SO−8 Flat Lead . . . . . . . . . . . . . . . . . . . . . . . . . 283 SO−8 N−Channel . . . . . . . . . . . . . . . . . . . . . . . . 283 SO−8 P−Channel . . . . . . . . . . . . . . . . . . . . . . . . 283 SO−8 Complementary . . . . . . . . . . . . . . . . . . . . 283 SO−8 FETKY N−Channel . . . . . . . . . . . . . . . . . 283 SO−8 FETKY P−Channel . . . . . . . . . . . . . . . . . 283 SOT−223 N−Channel . . . . . . . . . . . . . . . . . . . . 284 SOT−223 P−Channel . . . . . . . . . . . . . . . . . . . . . 284 DPAK N−Channel . . . . . . . . . . . . . . . . . . . . . . . . 284 DPAK P−Channel . . . . . . . . . . . . . . . . . . . . . . . . 285 D2PAK N−Channel . . . . . . . . . . . . . . . . . . . . . . . 285 D2PAK P−Channel . . . . . . . . . . . . . . . . . . . . . . . 285 PlnPAKt N−Channel . . . . . . . . . . . . . . . . . . . . . 285 TO−92 N−Channel . . . . . . . . . . . . . . . . . . . . . . . 286 TO−220AB N−Channel . . . . . . . . . . . . . . . . . . . 286 TO−220AB P−Channel . . . . . . . . . . . . . . . . . . . 286 TO−264 N−Channel . . . . . . . . . . . . . . . . . . . . . . 286 Ignition IGBT Products . . . . . . . . . . . . . . . . . . . . . . 287 SmartDiscretet Products . . . . . . . . . . . . . . . . . . . 288 Product Replacement Table . . . . . . . . . . . . . . . . . . 289
*Configuration Codes: S = Single, D = Dual, C = Complementary, F = FETKY, L = Load Switch, Q = Quad
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ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount
4.5 V/5.0 V*
2.5 V/2.7 V*
1.8 V
QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V*
0.23
0.275
0.7
1.82
RDS(on) Max (W) @ VGS = VDSS (V)
10 V
Max Rating ID (A)
PD (W)
0.915
0.3
NTA4153N
S
Device
Config.
SC−75 − Case 463 N−Channel 20 30
3
3.5
0.238
0.3
NTA4001N
S
7.0
7.5
0.154
0.3
NTA7002N
S
0.36
0.45
1
2.1
−0.76
0.301
NTA4151P
S
0.23
0.275
0.7
1.82
0.915
0.3
NTE4153N
S
0.36
0.45
1
2.1
−0.76
0.313
NTE4151P
S
0.55
0.7
0.9
1.5
0.570
0.280
NTZD3154N
D
0.15
0.2
0.24
5.6
−0.95
0.21
NTZS3151P
S
0.9
1.2
2
1.7
−0.455
0.28
NTZD3152P
D
0.55/0.9
0.7/1.2
0.9/2.0
1.5/1.7
0.570/ −0.455
0.280
NTZD3155C
C
1.4
0.3
0.15
MMBF2201N
S
0.9
0.27
0.33
NTS4001N
S
P−Channel −20 SC−89 − Case 463C N−Channel 20 P−Channel −20 SOT−563 − Case 463A N−Channel 20 P−Channel −20 Complementary N/P 20 SC−70 − Case 419 N−Channel 20
1.0
30
1.4 1.5
2
0.1
0.14
0.120
0.16
P−Channel −8 −20
2.2
0.21
3.5
6.4
−1.4
0.29
NTS2101P
S
6.4
−1.37
0.329
NTS4101P
S
2.7*
−0.3
0.15
MMBF2202P
S
SC−88 (SOT−363) − Case 419B N−Channel 0.060
0.070
6.9
3.2
1.0
NTJS3157N
S
0.375
0.445
1.3
0.63
0.27
NTJD4401N
D
25
0.35
0.4*
0.75
1.2
0.63
NTJS4405N
S
30
1.5
2.5
0.9
0.25
0.272
NTJD4001N
D
−8
0.3
0.46
0.9
2.2
−0.775
0.27
NTJD2152P
D
−12
0.06
0.09
0.16
8.6
−3.3
0.625
NTJS3151P
S
0.06
0.085
0.205
10
−4.2
1
NTJS4151P
S
0.26
0.5
1
2.2
−0.88
0.35
NTJD4152P
D
20
0.085
P−Channel
−20
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ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS(on) Max (W) @ VGS = VDSS (V)
10 V
4.5 V/5.0 V*
2.5 V/2.7 V*
1.8 V
QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V*
Max Rating ID (A)
PD (W)
0.63/ −0.775
0.27
NTJD4105C
C
−1.3
0.4
NTJD1155L
L
12
7.20
2.5
NTHS5404
S
Device
Config.
SC−88 (SOT−363) − Case 419B (continued) Complementary N/P 20/−8
0.375/0.3
0.445/0.46
1.3/2.2
Integrated Load Switch P−Channel −8
0.175
0.22
0.32
0.030
0.045
0.065
0.105
4
4.5
1.13
NTHD5904N
D
0.075
0.115
2.6
4.5
2.1
NTHD4508N
D
ChipFETt − Case 1206A N−Channel
20
30
0.038
0.05
9.1*
6.1
2.5
NTHS4501N
S
0.085
0.14
3.6*
3.9
2.1
NTHD4502N
D
P−Channel −8
−20
0.025
0.036
0.048
15
−7.5
2.5
NTHS2101P
S
0.058
0.085
0.16
8
−4.6
2.1
NTHD2102P
D
0.034
0.04
0.052
25
−6.7
2.5
NTHS4101P
S
0.065
0.110
7.5
−4.90
2.5
NTHS5443
S
0.083
9.7
−5.30
2.5
NTHS5441
S
0.08
0.11
7.6
−4.1
2.1
NTHD4102P
D
0.155
0.24
0.17
3
−2.1
2.1
NTHD4401P
D
0.155
0.260
3.7
−3.0
2.1
NTHD5903
D
0.045/0.080
0.050/0.110
7.9/8.9
5.5/−4.2
2.1
NTHD3102C
C
Complementary N/P
20
0.070/0.15
0.08
0.115/0.110
2.3/7.4
3.9/−4.4
2.1
NTHD3100C
C
0.08/0.115
0.115/0.240
2.6/3.0
3.1/−2.1
2.1
NTHC5513
C
0.08
0.115
2.6
2.7
2.1
NTHD4N02F
F
0.08
0.11
7.4
−4.4
2.1
NTHD3101F
F
0.155
0.24
3
−4.4
2.1
NTHD4P02F
F
0.08
0.105
FETKYt N−Channel 20 FETKYt P−Channel −20
0.17
SOT−23 − Case 318 N−Channel
20
30
2.4
3.2
1.25
NTR4501N
S
0.090
0.130
6
0.75
0.4
MGSF1N02L
S
1.000
1.400
1.4
0.3
0.225
MMBF0201NL
S
0.100
0.145
6
2.1
0.73
MGSF1N03L
S
0.11
0.14
3.6*
2.5
0.73
NTR4503N
S
0.2
0.225
BSS138L
S
0.5
0.225
MMBF170L
S
0.115
0.225
2N7002L
S
0.17
0.225
BSS123L
S
50
3.500*
10*
5.000 60 100
7.500
7.5*
6.000
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ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount
2.5 V/2.7 V*
1.8 V
QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V*
0.052
0.072
0.12
12
−3.7
0.96
NTR2101P
S
0.085
0.12
0.21
7.5
−3.2
1.25
NTR4101P
S
0.20
0.35
−1.3
0.4
NTR1P02L
S
−1.0
0.400
NTR1P02
S
RDS(on) Max (W) @ VGS = VDSS (V)
10 V
4.5 V/5.0 V*
Max Rating ID (A)
PD (W)
Device
Config.
SOT−23 − Case 318 (continued) P−Channel −8
−20
−30
0.18
0.28
2.5
0.800
1.100
2.18*
−0.4
0.225
NTR0202PL
S
0.2
0.35
6*
−1.95
1.25
NTR4502P
S
10.000*
6
−0.13
0.225
BSS84L
S
8
5.1
2
NTGS3446
S
0.5
1.56
NUD3048M
S
−50 TSOP−6 − Case 318G N−Channel 20 100
0.045 0.72
0.055
0.82
P−Channel −12 −20
−30
0.075
0.095
7
−3.30
2.00
NTGS3433
S
0.065
0.100
7.5
−4.40
2.00
NTGS3443
S
0.090
0.135
6.2
−3.30
2.00
NTGS3441
S
0.06
0.11
15.25*
−4.7
2.00
NTGS4111P
S
0.100
0.170
9*
−3.50
2.00
NTGS3455
S
−3.3
0.83
NTGD1100L
L
Integrated Load Switch P−Channel −8
0.055
0.070
0.140
Micro8t Leadless− Case 846C N−Channel 20
0.026
0.031
12
9
3.2
NTLTD7900Z
L
0.090
0.130*
10
−3.2
1.42
NTTS2P02
S
0.160
0.250*
Micro8t − Case 846A P−Channel −20 −30
0.085
0.135
5
−1.45
1.0
NTTD1P02
D
15
−3.75
1.78
NTTS2P03
S
FETKYt P−Channel −20
0.09
0.15
10
−3.3
1.42
NTTD4401F
F
0.022
0.03
12.5
7
1.81
NTQD6968N
D
0.030
0.038
13
6.9
2.0
NTQD6866
D
0.020
0.027*
28
−6.8
1.39
NTQS6463
S
TSSOP−8 − Case 948S N−Channel 20 P−Channel −20
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ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount RDS(on) Max (W) @ VGS = VDSS (V)
10 V
4.5 V/5.0 V*
2.5 V/2.7 V*
1.8 V
QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V*
ID (A)
PD (W)
13
21
2.3
NTMFS4701N
S
Max Rating Device
Config.
SO−8 (Flat Lead) − Case 488A N−Channel
30
0.008
0.011
0.01
0.014
10
19
2.2
NTMFS4708N
S
0.013
0.017
7.5
17
2.3
NTMFS4707N
S
12
6.5
2
NTMD6N02
D
NTMS4N01
S
MMDF3N02HD
D
SO−8 (MiniMOSt) − Case 751 N−Channel
30
80
0.048*
0.040
0.050*
11
5.9
2.5
0.090
0.100
12.5*
3.8
2
0.008
0.0098
23
14
2.5
NTMS4503N
S
0.0045
0.0055
45
18
2.5
NTMS4107N
S
0.0072
0.01
16
14.5
1.56
NTMS4700N
S
0.0095
0.0125
12
12.3
2.3
NTMS4704N
S
0.01
0.014
11
12
2.3
NTMS4705N
S
0.012
0.015
10
10.3
2.2
NTMS4706N
S
0.023
0.028
26
6.5
2.5
NTMS7N03
S
0.060
0.080
8*
4
2
NTMD4N03R2
D
0.215
0.245
4
2.3
3.1
NTMD3N08L
D
20
28
0.035
P−Channel −16
−20
−30
0.100
0.150
10
−3.85
2.0
NTMD2P01
D
0.014
0.020
48
−10
2.5
NTMS10P02
S
0.033
0.048
20
−7.0
2.5
NTMS5P02
S
0.033
0.050
20
−7.8
2
NTMD6P02
D
0.075
0.095
33*
−5.6
2.5
0.250
0.400
10*
−2.5
2
MMSF3P02HD
S
MMDF2P02E
D
0.085
0.115
16*
−3.86
2.34
NTMS3P03
S
0.085
0.125
16*
−3.86
2
NTMD3P03
D
Complementary N/P 20 30
0.043/0.100 0.070/ 0.200
12/10
5.2/−3.4
2
NTMD2C02
C
0.075/ 0.300
0.048/0.130
11.5/14.2*
4.1
2
MMDF2C03HD
C
0.04
19*
6
2
NTMSD6N303
F
FETKYt N−Channel 30
0.032
FETKYt P−Channel 0.090 −20 −30
16
−3.85
2
NTMSD2P102L
F
0.085
0.125
0.015
16*
−3.86
2
NTMSD3P102
F
0.085
0.125
16*
−3.86
2
NTMSD3P303
F
http://onsemi.com 283
ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V*
ID (A)
PD (W)
10.6*
3.00
2.10
NTF3055−100
S
0.120*
7.6
3.00
2.10
NTF3055L108
S
0.175*
5.1
2.00
2.10
NTF3055L175
S
RDS(on) Max (W) @ VGS = VDSS (V)
10 V
4.5 V/5.0 V*
2.5 V/2.7 V*
1.8 V
Max Rating Device
Config.
SOT−223 − Case 318E N−Channel 0.110 60
P−Channel 0.05 −20 −30
0.07
0.17 0.100
0.150
DPAK − Case 369x Family
15
−10
8.3
NTF6P02
S
14.3*
−2.6
2.3
NTF2955
S
15*
−5.2
3.13
NTF5P03
S
23.6
32
110
NTD110N02R
S
(TO−252)†
N−Channel
24
25
0.0046
0.0062
0.005
0.008
0.0052
86
NTD95N02R
S
32
78.1
NTD85N02R
S
30
80
75
NTD80N02
S
0.009
0.0105
0.0125
9.5
32
58
NTD60N02R
S
0.0057
0.0085
19.4
85
76.9
NTD78N03R
S
0.006
0.0078
25.5
78
64
NTD78N03
S
0.008
0.013
13.2
32
62.5
NTD70N03R
S
0.0084
0.0146
12.2
65
50
NTD65N03R
S
0.014
0.023
6.0
45
50
NTD50N03R
S
0.0165
0.023
5.78
32
50
NTD40N03R
S
0.045
0.060
3.76
17.1
22.3
NTD23N03R
S
0.095
0.130
1.8
14
20.8
NTD14N03R
S
0.010
0.013
55*
68
75
NTD4302
S
0.027*
13.8*
20
74
NTD20N03L27
S
0.028*
23
32
93.75
NTD32N06L
S
24*
24
62.5
NTD24N06
S
16
24
62.5
NTD24N06L
S
21.2*
20
60
NTD20N06
S
0.042 0.045* 0.046 0.048* 0.060 0.062 0.065* 0.094 0.104* 0.150 0.170 100
32
0.0058
30
60
21 17.7*
16.6
20
60
NTD20N06L
S
15.3*
18
55
NTD18N06
S
33*
32
93.75
NTD32N06
S
11
18
55
NTD18N06L
S
10.9*
12
48
NTD3055−094
S
7.4
12
48
NTD3055L104
S
7.1*
9
28.8
NTD3055−150
S
4.7
9
28.5
NTD3055L170
S
0.146
11.3
12
56.6
NTD6600N
S
0.165
14*
12
53.6
NTD12N10
S
†Multiple DPAK pacakages are available. For specific package numbers and dimensions, please see device data sheet.
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ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Surface Mount QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V*
ID (A)
PD (W)
0.072*
15
−25
75
NTD25P03L
S
0.15*
15*
−15.5
65
NTD20P06L
S
15*
−12
55
NTD2955
S
NTB125N02R
S
NTB90N02
S
RDS(on) Max (W) @ VGS = VDSS (V)
10 V
4.5 V/5.0 V*
DPAK − Case 369x Family
2.5 V/2.7 V*
(TO−252)†
1.8 V
Max Rating Device
Config.
(continued)
P−Channel −30 −60
0.18
D2PAK − Case 418B (TO−264) N−Channel
24
25 28
0.0046
0.0062
23.6
125
113.6
0.0058
0.009
29
90
85
0.0105
0.0125
9.5
65
62.5
NTB65N02R
S
0.008
0.013
13.2*
75
74.4
NTB75N03R
S
0.045
0.06
3.76
23
37.5
NTB23N03R
S
0.0068
29
85
80
NTB85N03
S
0.0065
57
75
125
NTB75N03−006
S
57
75
125
NTB75N03L09
S
0.008*
30 0.0093
0.0125
0.0095 0.014 0.016*
80
NTB4302
S
75
214
NTB75N06
S
62*
60
150
NTB60N06
S
60
150
NTB60N06L
S
33*
45
125
NTB45N06
S
0.028* 0.042
74
43.2
0.026 60
28 92*
23
45
125
NTB45N06L
S
23.4*
27
88.2
NTB30N06
S
0.046*
16
30
88.2
NTB30N06L
S
12*
15
48.4
NTB18N06
S
7.3
15
48.4
NTB18N06L
S
0.030
72*
52
178
NTB52N10
S
0.165
14*
13
64.7
NTB13N10
S
150
0.050
70*
37
178
NTB35N15
S
200
0.081
75*
30
214
NTB30N20
S
0.075
33*
−27.5
120
NTB25P06
S
0.14*
13
−18.5
88
NTB5605P
S
0.013
13
15
2.9
NTL4502NT1
Q
0.090 0.100* 100
P−Channel −60 PlnPAKt − Case 495 N−Channel 24
0.011
†Multiple DPAK pacakages are available. For specific package numbers and dimensions, please see device data sheet.
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ON Semiconductor Selector Guide − Power MOSFET Products MOSFET − Through−Hole RDS(on) Max (W) @ VGS = VDSS (V)
10 V
4.5 V/5.0 V*
2.5 V/2.7 V*
1.8 V
QT Typ (nC) @ VGS = 4.5 V (5.0 V)/10 V*
Max Rating ID (A)
PD (W)
0.15
0.4
VN2222LL
S
0.2
0.35
2N7000
S
0.5
0.35
BS170
S
28
0.25
0.35
BS107
S
10*
0.25
0.35
BS108
S
0.25
0.35
BS107A
S
0.2
0.35
VN2410L
S
23.6*
125
113.6
NTP125N02R
S
Device
Config.
TO−92 − Case 29−11 N−Channel 7.5 60
5.0
6.0
5.0 14 200 6.0 240
10
10
TO−220AB − Case 221A (See individual data sheets for specific case number.) N−Channel 0.0046
0.0062
0.0058
0.009
29
90
85
NTP90N02
S
0.0105
0.0125
9.5
65
62.5
NTP65N02R
S
25
0.008
0.013
13
75
74.4
NTP75N03R
S
28
0.0068
29
85
80
NTP85N03
S
0.0065
57
75
125
NTP75N03−006
S
0.008*
57
75
125
NTP75N03L09
S
0.0125
28
74
80
NTP4302
S
92*
75
214
NTP75N06
S
24
30 0.0093 0.0095 0.014
0.016* 0.026 60
0.028* 0.046 0.090 0.100
62*
60
150
NTP60N06
S
43.2
60
150
NTP60N06L
S
33*
45
125
NTP45N06
S
23
45
125
NTP45N06L
S
21.2*
27
88.2
NTP27N06
S
12*
15
48.4
NTP18N06
S
7.3
15
48.4
NTP18N06L
S
100
0.165
14*
13
64.7
NTP13N10
S
150
0.050
70*
37
178
NTP35N15
S
200
0.081
75*
30
214
NTP30N20
S
0.153
14
−14
55.6
NTP2955
S
200*
123
313
NTY100N10
S
P−Channel −60
TO−264 − Case 340G N−Channel 100
0.010
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ON Semiconductor Selector Guide − Power MOSFET Products Ignition IGBT − Insulated Gate Bipolar Transistors
VCE(on) (V) VGE = 4.0 V IC = 6.0 A
VGE = 4.5 V IC = 10 A
Min Energy Ratings
Clamp Voltage
Switching Speed (IC = 6.5 A)
EAS (mJ)
VCES (V)
Resistive TFALL (ms)
ID − Cont (A)
PD (W)
Max Rating Device
Config.
DPAK − Case 369A (TO−252) 1.35
1.6
250
400
6
20
125
NGD8201N
S
1.35
1.6
250
350
6
20
125
NGD8205N
S
1.6
2
400
400
9
18
115
NGD18N40CLB
S
1.8
2.1
250
410
8
15
107
NGD15N41CL
S
D2PAK
− Case 418B (TO−264)
1.35
1.6
250
400
6
20
150
NGB8202N
S
1.6
2.0
400
430
9
18
115
NGB8204N
S
1.35
1.6
250
350
6
20
150
NGB8206N
S
1.6
2
400
400
9
18
115
NGB18N40CLB
S
1.8
2.1
250
410
8
15
107
NGB15N41CL
S
1.6
1.9
300
410
13
15
150
MGB15N40CL
S
1.6
1.9
300
350
13
15
150
MGB15N35CL
S
TO−220AB − Case 221A 1.8
2.1
250
410
8
15
107
NGP15N41CL
S
1.6
1.9
300
410
13
15
150
MGP15N40CL
S
1.6
1.9
300
350
13
15
150
MGP15N35CL
S
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ON Semiconductor Selector Guide − Power MOSFET Products SmartDiscretest
VDSS (V)
10 V
5.0 V
4.5 V/ 4.0 V*
Max Rating
Integrated Protections
RDS(on) Max (W) @ VGS = Over− voltage
Current Limit
Thermal Limit
Current Sense Output
ESD
PD (W)
X
0.66
NUD3048M
S
X
X
2.7
NILMS4501N
S
X
X
1.3
NIMD6302R
D
Device
Config.
TSOP−6 − Case 318G 100
0.72
0.82
SO−8 Leadless − Case 508AA 24
0.013
0.016
SO−8 (MiniMOSt) − Case 751 30
0.05
0.06
SOT−223 − Case 318E X
1.69
NIF9N05CL
S
0.1
0.135 0.12
X
X
X
X
1.7
NIF62514
S
0.2
0.23
X
X
X
X
1.1
NIF5002N
S
0.068
0.076
X
X
X
X
1.9
NIF5003N
S
28
0.8
X
X
20
NUD3124L
S
60
1.8
X
X
20
NUD3160L
S
28
0.8
X
X
20
NUD3124DM
D
60
1.8
X
X
20
NUD3160DM
D
55
42
0.2*
X
SOT−23 − Case 318
SC−74 − Case 318F
DPAK (TO−252) − Case 369C 55 42 60 62
X
28.8
NID9N05CL
S
0.029
0.034
0.12
0.181*
X X
X
X
X
64
NID5001N
S
0.05
0.058
X
X
X
X
42
NID5003N
S
0.240
X
X
X
X
35
NID6002N
S
0.75
X
X
X
40
MLD1N06CL
S
0.4
X
X
X
40
MLD2N06CL
S
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ON Semiconductor Selector Guide − Power MOSFET Products Product Replacements
Replacement parts are parts that are equivalent to older versions, but built in new technologies. In some cases the replacement parts have a price advantage. In other cases they have a performance advantage and, in some cases, both. Replacement Table Part Number
Recommended New Part Numbers
New Part Status
MGSF1P02ELT1/LT3
NTR1P02LT1/T3
Active
MGSF1P02LT1/LT3
NTR1P02LT1/T3
Active
MGSF3433VT1
NTGS3433T1
Active
MGSF3441VT1
NTGS3441T1
Active
MGSF3455VT1
NTGS3455T1
Active
MMBF0202PLT1
NTR0202PLT1
Active
MMDF2C01HDR2
NTMD2C02R2
Active
MMDF2C02ER2
NTMD2C02R2
Active
MMDF2C02HDR2
NTMD2C02R2
Active
MMDF2P01HDR2
NTMD2P01R2
Active
MMDF2P03HDR2
NTMD3P03R2
Active
MMDF3N03HDR2
NTMD4N03R2
Active
MMDF4207R2
NTMD6P02R2
Active
MMDF4N01HDR2
NTMD6N02R2
Active
MMDF4P03HDR2
NTMD3P03R2
Active
MMDF6N02HDR2
NTMD6N02R2
Active
MMDF6N03HDR2
NTMD6N03R2
Active
MMDFS2P102R2
NTMSD3P102R2
MMDFS3P303R2
NTMSD3P303R2
Active
MMDFS6N303R2
NTMSD6N303R2
Active
MMFT2955ET1
NTF2955T1
MMFT3055ELT1
NTF3055L108T1
MMFT3055ET1
NTF3055−100T1
MMFT3055VLT1
NTF3055L108T1
MMFT3055VLT1G
NTF3055L108T1G
MMFT3055VLT3
NTF3055L108T3
MMFT3055VLT3G
NTF3055L108T3G
Active
MMFT3055VLT3−LF
NTF3055L108T3LF
Active
MMFT3055VT1
NTF3055−100T1
Active
MMFT3055VT3
NTF3055−100T3
Active
MMFT5P03HDT1
NTF5P03T3
Active
MMFT5P03HDT3
NTF5P03T3
Active
MMSF3P03HDR2
NTMS3P03R2
Active
MMSF4205R2
NTMS10P02R2
Active
MMSF4N01HDR2
NTMS4N01R2
Active
MMSF5N02HDR2
NTMS4N01R2
Active
MMSF5N03HDR2
NTMS7N03R2
Active
MMSF5P02HDR2
NTMS5P02R2
Active
MMSF7N03HDR2
NTMS7N03R2
Active
MTB1306
NTB75N03L09
NTMSD2P102LR2
Active
Active NTF3055L175T1
Active Active
NTF3055L175T1
Active Active
NTF3055L175T3
NTB75N03−006
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Active
Active
ON Semiconductor Selector Guide − Power MOSFET Products Replacement Table Part Number
Recommended New Part Numbers NTB75N03−006T4
New Part Status
MTB1306T4
NTB75N03L09T4
MTB15N06V
NTB18N06
Active
MTB20N20E
NTB30N20
Active
MTB20N20ET4
NTB30N20T4
Active
MTB23P06V/VT4
NTB25P06/T4
Active
MTB29N15ET4
NTB35N15T4
Active
MTB30N06VL
NTB30N06L
Active
MTB30N06VLT4
NTB30N06LT4
Active
MTB33N10E
NTB52N10
Active
MTB33N10ET4
NTB52N10T4
Active
MTB36N06V
NTB45N06T4
Active
MTB36N06VT4
NTB45N06T4
Active
MTB40N10E
NTB52N10T4
Active
MTB40N10ET4
NTB52N10T4
Active
MTB50N06V
NTB45N06
Active
MTB50N06VL
NTB45N06L
Active
MTB50N06VLT4
NTB45N06LT4
Active
MTB50N06VT4
NTB45N06T4
Active
MTB52N06V
NTB60N06
Active
MTB52N06VL
NTB60N06L
Active
MTB52N06VLT4
NTB60N06LT4
Active
MTB52N06VT4
NTB60N06T4
Active
MTB60N06HD
NTB60N06
Active
MTB60N06HDT4
NTB60N06T4
Active
MTB75N03HDL
NTB75N03L09
Active
MTB75N03HDLT4
NTB75N03L09T4
Active
MTB75N05HD
NTB75N06
Active
MTB75N05HDT4
NTB75N06T4
Active
MTB75N06HD
NTB75N06
Active
MTB75N06HDT4
NTB75N06T4
Active
MTD1302−001
NTD4302−1
Active
MTD14N10ET4
NTD12N10T4
Active
MTD15N06V
NTD18N06
Active
MTD15N06V1
NTD18N06−001
Active
MTD15N06VL
NTD18N06L
Active
MTD15N06VL1
NTD18N06L−001
Active
MTD15N06VLT4
NTD18N06LT4
Active
MTD15N06VT4
NTD18N06T4
Active
MTD20N03HDL
NTD20N03L27
Active
MTD20N03HDL1
NTD20N03L27−001
Active
MTD20N03HDLG
NTD20N03L27G
Active
MTD20N03HDLT4G
NTD20N03L27T4G
Active
MTD20N03HDLT4
NTD20N03L27T4
Active
MTD20N06HD
NTD24N06
Active
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Active
ON Semiconductor Selector Guide − Power MOSFET Products Replacement Table Part Number
Recommended New Part Numbers
New Part Status
MTD20N06HD1
NTD24N06−001
Active
MTD20N06HDL
NTD24N06L
Active
MTD20N06HDLT4
NTD24N06LT4
Active
MTD20N06HDT4
NTD24N06T4
Active
MTD20N06V
NTD20N06
Active
MTD20N06V1
NTD20N06−001
Active
MTD20N06VT4
NTD20N06T4
Active
MTD20P03HDL
NTD25P03L
Active
MTD20P03HDL1
NTD25P03L1
Active
MTD20P03HDLT4
NTD25P03LT4
Active
MTD20P06HDL
NTD20P06L
Active
MTD20P06HDLG
NTD20P06LG
Active
MTD20P06HDLT4
NTD20P06LT4
Active
MTD20P06HDLT4G
NTD20P06LT4G
Active
MTD2955ET4
NTD2955T4
Active
MTD2955V
NTD2955
Active
MTD2955V1
NTD2955
Active
MTD2955VT4
NTD2955T4
Active
MTD3055ELT4
NTD3055L104T4
NTD3055L170T4
Active
MTD3055V
NTD3055−094
NTD3055−150
Active
MTD3055V1
NTD3055−094−001
NTD3055−150−001
Active
MTD3055VL
NTD3055L104
NTD3055L170
Active
MTD3055VL1
NTD3055L104−001
NTD3055L170−001
Active
MTD3055VLT4
NTD3055L104T4
NTD3055L170T4
Active
MTD3055VT4
NTD3055−094T4
NTD3055−150T4
Active
MTD3302
NTD4302
Active
MTD3302T4
NTD4302T4
Active
MTD9N10E
NTD12N10
Active
MTD9N10E1
NTD12N10−001
Active
MTD9N10ET4
NTD12N10T4
Active
MTDF1P02HDR2
NTTD1P02R2
Active
MTP10N10E
NTP13N10
Active
MTP1306
NTP75N03L09
MTP15N06V
NTP18N06
Active
MTP15N06VL
NTP18N06L
Active
MTP20N06V
NTP27N06
Active
MTP20N20E
NTP30N20
Active
MTP3055V
NTP18N06
Active
MTP3055VL
NTP18N06L
Active
MTP36N06V
NTP45N06
Active
MTP50N06V
NTP45N06
Active
MTP50N06VL
NTP45N06L
Active
MTP52N06V
NTP60N06
Active
MTP52N06VL
NTP60N06L
Active
NTP75N03−006
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Active
ON Semiconductor Selector Guide − Power MOSFET Products Replacement Table Part Number
Recommended New Part Numbers
New Part Status
MTP60N06HD
NTP60N06
Active
MTP75N03HDL
NTP75N03L09
Active
MTP75N05HD
NTP75N06
Active
MTP75N06HD
NTP75N06
Active
MTSF2P02HDR2
NTTS2P02R2
Active
MTSF2P03HDR2
NTTS2P03R2
MTW35N15E
NTP35N15
MTW45N10E
NTB52N10
MTY100N10E
NTY100N10
NMFT3055AVLT1
NTF3055L108T1
NTF3055L175T1
Active
NMFT3055AVLT3−LF
NTF3055L108T3
NTF3055L175T3
Active
NMFT3055AVT1
NTF3055−100T1
NTD3055AVLT4
NTD3055L104
NTP3055AV
NTP18N06
Active NTB35N15/NTB35N15T4
Active Active Active
Active NTD3055L170
Active Active
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Integrated Functions
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Integrated Functions In Brief . . .
ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁ Product Summary Product
Description
Page
TVS (Transient Voltage Suppression) arrays which reduce voltage and current spikes from electrostatic discharge (ESD) or lightening to protect electronic circuits.
297
Protection Circuits
EMI Filter Circuits
ICs which provide isolation from electromagnetic interface (EMI) and also provide protection from electrostatic discharge (ESD).
303
Relay Drivers
ICs which act as switches to interface between relay coils and sensitive logic circuits.
310
Inrush Current Limiter
ICs which limit inrush current and function as resettable circuit breakers.
314
Overvoltage Protection IC with Integrated P−Channel MOSFET
317
OVP IC w/MOSFET
Integrated Functions combine multiple integrated circuits or discrete devices along with passive elements into a single package solution, reducing component count, system size and overall cost while improving parametric performance and stability.
Page Integrated Functions Protection Circuits . . . . . . . . . . . . . . . . . . . . . . . . 297 TVS Arrays in Surface Mount . . . . . . . . . . . . 297 TVS Low Capacitance Surface Mount for USB 2.0 and 1.1 . . . . . . . . . . . . . . . . . . 300 TVS Low Capacitance Surface Mount for High Speed Data Lines . . . . . . . . . . . . 302 EMI Filter Circuits Data Line Protection . . . . . . . . . . . . . . . . . . . . 303 Audio Line Protection . . . . . . . . . . . . . . . . . . . 307 USB DATA Line Protection . . . . . . . . . . . . . . 308 Relay Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 310 LED Drivers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 313 Integrated PNP/NPN Digital Transistor Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 313 Inrush Current Limiter . . . . . . . . . . . . . . . . . . . . . 314 SMART HotPlugt . . . . . . . . . . . . . . . . . . . . . . 314 Hybrid Diode IC . . . . . . . . . . . . . . . . . . . . . . . . . . 316 Floating, Regulated Charge Pump . . . . . . . . . . 316 MOSFET with Buffered Gate . . . . . . . . . . . . . . . 317 OVP IC with Integrated MOSFET . . . . . . . . . . . 317
Enhanced Performance
With the increasing demand for enhanced functionality and reduced size, Integrated Functions provide “value added’’ flexibility for the customer. ON Semiconductor has the complete infrastructure to combine many functions into a single package solution. The demand for this integration is especially strong in computing, wireless, networking and portable applications.
What’s New for Integrated Functions
Better Efficiency Rectification System, BERSt − ON Semiconductor leads the way with the NIS6111, the industry’s first self−contained synchronous rectifier. This device contains a high speed comparator and MOSFET driver with a 24 V, N−Channel Power MOSFET that can function as a two terminal replacement for higher power lossy diodes. The NIS6111 is the first in this family of low loss, hybrid diodes. Floating Charge Pump − ON Semiconductor will release in Q3 2005 the NIS6201 − Floating Charge Pump IC. This device can be used with the NIS6111 in an ORing application to provide the bias voltage to the hybrid diode. SMART HotPlugt − ON Semiconductor extends its integrated Hot Swap Family with the introduction of the NIS5102, NIS5112, NIS5111 and the NIS5131. The NIS5102 and NIS5112 have the integrated control, high side driver and power SENSEFETt all combined in one package. These devices feature active current limit and the most robust thermal protection with integrated temperature sensing diodes built into the Power SENSEFET for +12 V applications.
Benefits of Integrated Functions Include:
• • • • • • •
Reduction in Overall Size Reduced Number of Components Fewer Board Insertions Increased Parametric Stability Improved Solder Reliability Simplified Procurement Activity Lower Overall System Cost
How To Use This Selector Guide
1. 2. 3. 4.
Choose the product type (Protection, Filter, Drive). Choose the schematic. Choose the package type (ie., SC−74, SO−8). View the electrical specifications and find the device number.
(continued on next page)
http://onsemi.com 295
The NIS5101, NIS5111 and the NIS5131 have the integrated control, low side driver and power SENSEFET all combined in one package. These devices feature active current limit and the most robust thermal protection with integrated temperature sensing diodes built into the Power SENSEFET for −48 V applications. LED Drivers − ON Semiconductor has released the easy to design−in NUD4001 Constant Current LED Driver. Constant current assures device reliability by operating within manufacturer’s ratings and uniform intensity and color. The NUD4001 is the first in a family of linear, constant current LED drivers more to be introduced in Q4 2004. EMI Filters − ON Semiconductor provides highly integrated EMI Filter Products designed to suppress EMI radio frequency interference (RFI) noise and provide electrostatic discharge (ESD) Protection for advanced Wireless, Portable and Computing applications. Recently released products include 2, 4, 6, and 8 channel filters
(NUF2220, NUF2230, NUF4402, NUF6401, NUF6402, NUF6406, NUF8401, and NUF8402) in miniature DFN packages. These new filter series in DFN packages provides superior filtering performance over traditional CSP or BGA package due to low−parasitic Inductance and reliability in terms of handling and solderability. Overvoltage Protection (OVP) IC with Integrated P−Channel MOSFET − ON Semiconductor joins convenience to practicality and introduces the first overvoltage protection IC with integrated MOSFET specifically designed to protect sensitive electronic equipment from voltage surges. The NUS2045 and NUS3045 are to be used in any battery charging circuits where overvoltage transients and power supply fault could be destructive to a battery. During such hazardous events, the IC would quickly disconnect the charging circuit from the load before any damage can occur, thus protecting the battery.
http://onsemi.com 296
TVS Protection − Arrays in Surface Mount • Human Body Model ESD Rating (u16 kV) • IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact) Max Reverse Leakage Current
Breakdown Voltage
Device
VBR (V) Min
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
6
Capacitance (pF) @ 0 V, 1.0 MHz
Typ
Max
CASE 318F−05 STYLE 1 SC−74 PLASTIC
1
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec) (Note 1)
IPP (A)
VC (V)
Watts
1
6
2
5
3
4
SMS05C
6.2
−
7.2
1.0
5.0
5.0
260
−
24
14.5
350
SMS12C
13.3
−
15
1.0
1.0
12
120
−
15
23
350
SMS15C
17
−
19
1.0
1.0
15
95
−
12
29
350
SMS24C
26.7
−
32
1.0
1.0
24
60
−
8.0
44
350
5
4
6 1
2
CASE 419B−02 SC−88 (SOT−363)
3
1
6
2
5
3
4
SMF05C
6.2
−
7.2
1.0
5.0
5.0
80
−
8.0
12.5
100
SMF12C
13.3
−
15
1.0
1.0
12
40
−
6.0
23
100
SMF15C
17
−
19
1.0
1.0
15
33
−
5.0
29
100
SMF24C
26.7
−
32
1.0
1.0
24
21
−
2.5
44
100
−
90
CASE 463A−01 SOT−563
6
1
6
2
5
3
4
1
NUP5120X6
6.2
6.8
7.2
1.0
0.5
3.0
1. Surge waveform 8 x 20 msec.
http://onsemi.com 297
54
−
−
TVS Protection − Arrays in Surface Mount (continued) Max Reverse Leakage Current
Breakdown Voltage
Device
VBR (V) Min
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
6
Capacitance (pF) @ 0 V, 1.0 MHz
Typ
Max
CASE 318F−05 STYLE 1 SC−74 PLASTIC
1
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec) (Note 2)
IPP (A)
VC (V)
Watts
1
6
2
5
3
4
MMQA5V6
5.32
5.6
5.88
1.0
2.0
3.0
257
−
3.0
8.0
150
MMQA6V2
5.89
6.2
6.51
1.0
0.7
4.0
225
−
2.66
9.0
150
MMQA6V8
6.46
6.8
7.14
1.0
0.5
4.3
210
−
2.45
9.8
150
MMQA12V
11.4
12
12.6
1.0
0.075
9.1
117
−
1.39
17.3
150
MMQA13V
12.4
13
13.7
1.0
0.075
9.8
108
−
1.29
18.6
150
MMQA15V
14.3
15
15.8
1.0
0.075
11
93
−
1.1
21.7
150
MMQA18V
17.1
18
18.9
1.0
0.075
14
77
−
0.923
26
150
MMQA20V
19
20
21
1.0
0.075
15
69
−
0.84
28.6
150
MMQA21V
20
21
22.1
1.0
0.075
16
66
−
0.792
30.3
150
MMQA22V
20.9
22
23.1
1.0
0.075
17
63
−
0.758
31.7
150
MMQA24V
22.8
24
25.2
1.0
0.075
18
58
−
0.694
34.6
150
MMQA27V
25.7
27
28.4
1.0
0.075
21
50
−
0.615
39
150
MMQA30V
28.5
30
31.5
1.0
0.075
23
40
−
0.554
43.3
150
MMQA33V
31.4
33
34.7
1.0
0.075
25
42
−
0.504
48.6
150
SMS05
6.0
−
7.2
1.0
20
5.0
300
400
23
15.5
350
SMS12
13.3
−
15
1.0
1.0
12
120
150
15
23
350
SMS15
16.7
−
18.5
1.0
1.0
15
100
125
12
29
350
SMS24
26.7
−
32
1.0
1.0
24
60
75
8.0
44
350
4
1
5 1
2
CASE 419A−02 SC−88A (SOT−353)
3
5
2 4
3
MSQA6V1W5
6.1
6.6
7.2
1.0
1.0
3.0
90
−
−
−
150
NSQA6V8AW5
6.4
6.8
7.1
1.0
1.0
5.0
12
15
1.6
13
20
NSQA12VAW5
11.4
12
12.7
5.0
0.05
9.0
7.0
15
0.9
23
20
SMF05
6.0
−
7.2
1.0
5.0
5.0
90
−
12
12.5
200
2. Surge waveform 8 x 20 msec.
http://onsemi.com 298
TVS Protection − Arrays in Surface Mount (continued) Max Reverse Leakage Current
Breakdown Voltage Device
VBR (V) Min
Nom
Max
IR
VRWM
(mA)
(mA)
(V)
Typ
4
5 6
1 DF6A6.8FU
@ IT
Capacitance (pF) @ 0 V, 1.0 MHz
6.4
2
CASE 419B−02 SC−88 (SOT−363)
3
6.8
7.2
1.0
1.0
5.0
Max
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec) (Note 3)
IPP (A)
VC (V)
Watts
11.4
75
10.5
100
1
6
2
5
3
4
40
−
7.0
1 CASE 463B−01 SOT−553
5 1
5
2 4
3 NZQA5V6XV5
5.32
5.6
5.88
1.0
1.0
3.0
90
−
10
NZQA6V2XV5
5.89
6.2
6.51
1.0
0.5
4.0
80
−
9.0
11.5
100
NZQA6V8XV5
6.46
6.8
7.14
1.0
0.1
4.3
70
−
8.0
12.5
100
NZQA5V6AXV5
5.3
5.6
5.9
1.0
1.0
3.0
13
17
1.6
13
20
NZQA6V8AXV5
6.1
6.8
7.2
1.0
1.0
3.0
12
15
1.6
13
20
A1
C1
CASE 766AB−01 5 PIN FLIP−CHIP CSP
B2
A3 NUP4103FC
6.0
7.0
8.0
1.0
0.1
3.3
C3 47
−
−
−
1
4 CASE 419A−02 STYLE 9 SC−88A (SOT−353)
5 1
2
3
5
2 3
NUR30QW5
−
−
−
−
30
−
10
3
−
−
0.385
PIN 3 PIN 2
2 26.2
4 20
PIN 1 CASE 318−08 SOT−23
1 NUP2105L
−
−
32
1.0
0.1
24
3. Surge waveform 8 x 20 msec.
http://onsemi.com 299
30
−
8.0
44
350
TVS Protection − Low−Capacitance Surface Mount for USB 2.0 and 1.1 • ESD Protection Meeting IEC 61000−4−2, 4−4, 4−5 Max Reverse Leakage Current
Breakdown Voltage Device
VBR (V) Min
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
Capacitance* (pF) @ 0 V, 1.0 MHz
Typ
CASE 751−07 SO−8
8 1
Max
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec)
IPP (A)
VC (V)
Watts
1
8
2
7
3
6
4
5
USB 2.0 NUP4201DR2
6.0
−
−
1.0
10
5.0
2.5
5.0
10
12
500
SRDA05−4R2
6.0
−
−
1.0
10
5.0
4.0
8.0
10
12
500
15
2000
CASE 751−07 SO−8
8 1
1
8
2
7
3
6
4
5
USB 1.1 LC03−6
6.8
−
−
1.0
20
5.0
8.0
12
50
I/O 1 6
6 I/O
54 CASE 318G−02 TSOP−6
3 12
GND 2
5 VCC
1/O 3
4 I/O
USB 2.0 NUP4301MR6
70
−
−
0.1
2.5
−
0.8
1.5
−
−
−
NUP4302MR6
30
−
−
0.1
30
−
−
18
−
−
−
6
5
4
1
2
CASE 318F−05 TSOP−6
3
I/O 1
6 I/O
VP 2
5 VN
1/O 3
4 I/O
USB 2.0 NUP4304MR6
70
−
−
0.1
2.5
−
*Cj = Between I/O pins
http://onsemi.com 300
0.8
1.5
−
−
−
TVS Protection − Low−Capacitance Surface Mount for USB 2.0 and 1.1 (continued) Max Reverse Leakage Current
Breakdown Voltage Device
VBR (V) Min
6
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
Capacitance* (pF) @ 0 V, 1.0 MHz
Typ
Max
Max Reverse Surge Current
Max Reverse Voltage @ IPP (Clamping Voltage)
Peak Power Rating (8x20 msec)
IPP (A)
VC (V)
Watts
I/O 1
6 I/O
VN 2
5 VP
I/O 3
4 I/O
54 CASE 318G−02 TSOP−6
3 12
USB 2.0 NUP4201MR6
6.0
6
−
−
−
5.0
5.0
1.5
54
12
CASE 318G−02 TSOP−6
3
3.0
25
20
I/O 1
6 I/O
VN 2
5 VP
N/C 3
4 N/C
500
USB 2.0 NUP2201MR6
6.0
−
−
−
5.0
5.0
3.0
5.0
25
20
500
*Cj = Between I/O pin to ground
6
VN
1
6
N/C
I/O
2
5
I/O
VP
3
4
N/C
54
1
CASE 419B−02 SC−88
23
USB 2.0 NUP2301MW6
70
−
−
−
0.1
2.5
0.8
−
CASE 318−08 SOT−23
−
−
CATHODE 2
ANODE 1
3 1
1.5
3 CATHODE/ANODE
2
USB 2.0 NUP1301ML3
70
−
−
−
0.1
2.5
*Cj = Between I/O pins
http://onsemi.com 301
0.8
1.5
−
−
−
TVS Protection − Low−Capacitance Surface Mount for High Speed Data Lines • ESD Protection Meeting IEC 61000−4−2, 4−4, 4−5 Max Reverse Leakage Current
Breakdown Voltage Device
VBR (V) Min
Nom
Max
@ IT
IR
VRWM
(mA)
(mA)
(V)
Capacitance (pF) @ 0 V, 1.0 MHz
Typ
Max
Max Reverse Surge Current
Max Reverse Voltage @ IPP = 5 A (Clamping Voltage)
Peak Power Rating (8x20 msec)
IPP (A)
VC (V)
Watts
2
3
1
CASE 318−08 STYLE 26 SOT−23
1
3 (NC)
2 SL05
6.0
−
8.0
1.0
20
5.0
3.5
5.0
17
11
300
SL15
16.7
−
18.5
1.0
1.0
15
3.5
5.0
10
30
300
SL24
26.7
−
29
1.0
1.0
24
3.5
5.0
5.0
55
300
http://onsemi.com 302
EMI Filter − Data Line Protection VBR (V)
Device Typ
IR(mA) Max
VRWM
Max
Cdiode (pF) @ 2.5 V (Note 4)
Resistor
Typ
Typ
Max
100
110
100
110
3 CASE 463−01 SC−75 PLASTIC
3
1
2
1 NZF220T
7.0
8.0
1.0
3.0
10
1
4
3
5
4 5 1 2
CASE 419A−02 SC−88A
3
NZF220DF
7.0
6
8.0
1.0
CASE 463A−01 SOT−563
1
3.0
7.5
1
4
3
5
NUF2220XV6
7.0
−
1.0
5.0
7.0
100
115
NUF2230XV6
7.0
−
1.0
5.0
16
100
110
5.0
17
100
115
6
5
4
1 2 NUF2240W1
CASE 419B−02 SC−88
3
7.0
−
1.0
4. Line capacitance is 2x the diode capacitance (Cdiode).
http://onsemi.com 303
EMI Filter − Data Line Protection (continued) VBR (V)
Device Typ
IR(mA) Max
@VRWM (V)
Max
Cdiode (pF) @ 2.5 V (Note 5) Typ
Resistor Typ
Max
100 R 47 R CASE 499AG−01 FLIP−CHIP
A2
100 R
GND NUF3101FC
7.0
8
8.0
0.1
3.0
15
100
120
0.1
5.0
12
100
115
0.1
5.0
15
200
230
CASE 506AK−01 DFN8
1
NUF4402MN
7.0
8.0
CASE 506AA−01 DFN8 1
NUF4401MN
7.0
8.0
5. Line capacitance is 2x the diode capacitance (Cdiode).
http://onsemi.com 304
EMI Filter − Data Line Protection (continued) VBR (V)
Device Typ
IR(mA) Max
Cdiode (pF) @ 2.5 V (Note 6)
@VRWM (V)
Max
12
Resistor
Typ
Typ
Max
17
100
115
CASE 506AD−01 DFN12
1
NUF6402MN
7.0
8.0
1.0
5.0
CASE 499D−01 FLIP−CHIP 300 mm Bumps
NUF4105FC
7.0
12
8.0
0.1
3.3
23
100
120
CASE 506AD−01 DFN12
1
NUF6401MN
7.0
−
1.0
5.0
17
100
115
NUF6406MN
7.0
−
1.0
5.0
12
100
115
6. Line capacitance is 2x the diode capacitance (Cdiode).
http://onsemi.com 305
EMI Filter − Data Line Protection (continued) VBR (V)
Device Typ
IR(mA) Max
@VRWM (V)
Max
Cdiode (pF) @ 2.5 V (Note 7)
Resistor
Typ
Typ
Max
CASE 499D−01 FLIP−CHIP 300 mm Bumps
NUF6106FC
7.0
8.0
0.1
3.3
10
100
120
NUF6105FC
7.0
8.0
0.1
3.3
23
100
120
16
CASE 506AC−01 DFN16 1 of 8 Filter Lines
1 NUF8401MN
7.0
8.0
0.1
5.0
12
100
115
NUF8402MN
7.0
8.0
0.1
3.3
17
100
115
CASE 499G−01 FLIP−CHIP CSP 1 of 10 Filter Lines
A1 NUF9001FC
7.0
8.0
0.1
5.0
15
200
230
NUF9002FC
7.0
8.0
0.1
5.0
10
100
115
100
110
CASE 485F−01 24 PIN MLF 1 of 9 Filter Lines NZMM7V0T4
7.0
8.0
0.1
7. Line capacitance is 2x the diode capacitance (Cdiode).
http://onsemi.com 306
3.0
10
EMI Filter − Audio Line Protection VBR (V)
Device Typ
IR(mA) Max
@VRWM (V)
Cdiode (pF) @ 2.5 V (Note 8)
Max
Typ
C1
A1
Resistor
CASE 499J−01 FLIP−CHIP
Max
0.28
0.35
C2
L
L
C1
Typ
C2
Typical L = 2.9 nH NUF2441FC
14.5
17.7
0.1
12
100
VCC 15 kV Contact ESD Protection PGND LOW PASS FILTERING IN
CASE 499AE−01 FLIP−CHIP A1
OUT
15 kV
IECL Level 1
Contact ESD
Contact ESD
Protection
Protection
PGND 15 kV
AGND
PGND
Contact ESD Protection
NMF3000FC
12
−
0.5
8. Line capacitance is 2x the diode capacitance.
http://onsemi.com 307
10
500
950
1100
EMI Filter − USB DATA Line Protection VBR (V)
Device Typ
IR(mA) Max
Cline (pF) @ 2.5 V
VRWM
Max
Resistor
Typ
Typ
Max
Rs
6
C
CASE 463A−01 SOT−563
1
VBUS
GND
C Rs
NUF2030XV6
6.8
8.0
0.1
5.25
30
22
26.4
NUF2042XV6
6.8
8.0
0.1
5.25
42
22
26.4
D(IN)
5
6
D(OUT) D1
Rs2
D4
4
1 2
Rpu
CASE 419B−02 SC−88 (SOT−363)
3
C
A4 VBUS
A2−D2 A3−D3 GND
C Rs1
B4
A1 D(OUT)
D(IN)
NUF2015W1
6.8
8.0
0.1
5.25
42
15
18
NUF2221W1
6.8
8.0
0.1
5.25
42
22
26.4
D(IN)
5
D(OUT) D1
Rs2
D4
4
Rpu
6 1
2
CASE 318G−02 TSOP−6
3
C
A4 VBUS
C Rs1
B4
A1 D(OUT)
D(IN)
STF202−22
7.0
8.0
5.0
A2−D2 A3−D3 GND
5.25
57
22
24
33
38
A3 1.3K
A1 B2
CASE 499AM−01 FLIP−CHIP
33R C3
C1
D2 (Gnd Pin)
1
33R E1
NUF2222FC
7.8
8.8
0.1
5.0
34 RS
D+OUT
E3
D+IN
1 5
6 15 k
4
6 1
2
3
CASE 318G−02 STYLE 10 TSOP−6
VBUS 2
5 15 k
D−OUT
D−IN
3 NUF2101M
7.0
8.0
1.0
http://onsemi.com 308
4 5.25
46
30
33.7
EMI Filter − USB DATA Line Protection (continued) VBR (V)
Device Typ
IR(mA)
Max
@VRWM (V)
Cline (pF) @ 2.5 V
Max
Typ
Resistor Typ
Max
R1 A1 D1
C1
C1
R7 B1
R2
A2 D2 D11
C2
C2 B2
R3
A3 CASE 499AD−01 FLIP−CHIP CSP
D3
C3 B3
A1
C5 B4
C8
C7 B5
C4 D6
C5 D8
R6
A6 D9
C6 R5
A5 D7
C3 D4
R4
A4 D5
C4
C9
C6 D10
C10
NUF4107FC (Pin A1 to C1, Pin A2 to C2)
7.0
8.0
0.1
5.25
36
22
26
NUF4107FC (Pin A3 to C3, Pin A4 to C4, Pin A5 to C5, Pin A6 to C6)
7.0
8.0
0.1
5.25
60
100
120
http://onsemi.com 309
Relay Drivers Device
VBR Max (V)
IC (mA)
Ez (mJ) Vout
Vin
CASE 318−08 SOT−23
(3)
1.0 k 6.6 V
(1)
33 k GND
MDC3105L
6.0
Vout
6
5
(2)
500
50
(6)
Vout
(3)
4 Vin
1
2
3
1.0 k
1.0 k
(5)
33 k
33 k GND
MDC3105DM
Vin
6.6 V 6.6 V
CASE 318F−05 SC−74
(1)
6.0
GND
(2)
(4)
500
50
Drain (3)
Gate (1)
CASE 318−08 SOT−23
1.0 k 300 k
Source (2) NUD3105L
6.0
500
Drain (6)
6
5
4
Gate (2)
1
2
3
Drain (3)
1.0 k
CASE 318F−05 SC−74
300 k
6.0
300 k
500
http://onsemi.com 310
Gate (5)
1.0 k
Source (1) NUD3105DM
50
Source (4) 50
Relay Drivers (continued) Device
VDS Max (V)
ID (mA)
Ez (mJ) Drain (3)
Gate (1)
CASE 318−08 SOT−23
1.0 k 300 k
Source (2) NUD3112L
14
500
Drain (6)
Drain (3)
4
5
6
50
Gate (2) 3
2
1
1.0 k
CASE 318F−05 SC−74
300 k
300 k
Source (1) NUD3112DM
Gate (5)
1.0 k
14
Source (4)
500
50
Drain (3)
CASE 318−08 SOT−23
Gate (1)
10 k 100 K
Source (2) NUD3124L
28
150
Drain (6)
6
5
250
Drain (3)
4
1
2
3
CASE 318F−05 SC−74
Gate (2)
10 k 100 K
100 K
Source (1) NUD3124DM
28
Source (4) 150
http://onsemi.com 311
Gate (5)
10 k
250
Relay Drivers (continued) Device
VDS Max (V)
ID (mA)
Ez (mJ) Drain (3)
CASE 318−08 SOT−23
Gate (1)
10 k 100 k
Source (2) NUD3160L
60
150
Drain (6)
6
5
250
Drain (3)
4
1
2
3
CASE 318F−05 SC−74
Gate (2)
10 k 100 k
100 k
Source (4)
Source (1) NUD3160DM
60
150
http://onsemi.com 312
Gate (5)
10 k
250
LED Drivers Device
VMax (V)
CASE 751−07 SO−8
8 1
IMax (mA)
P (Watts)
GND
Iout
N/C
Iout Current Set Point
Rext
N/C N/C
Vin
NUD4001DR2
30
500
CASE 751−07 SO−8
8 1
NUD4011DR2
1.13
Vin
1
8
Iout
N/C
2
7
Iout
Rext
3
6
Iout
PWM
4
5
Iout
200
Current Set Point
70
1.13
Integrated PNP/NPN Digital Transistor Array Device
VCE (V)
hfe (6)
VBR (V) (5)
PD (mW) (4)
Q3 6 CASE 318F−05 SC−74 1 Q1 (1) NUS2401SN
0.25
Devices listed in bold italic are ON Semiconductor preferred devices.
http://onsemi.com 313
60 & 350
Q2 (2)
(3) 50
350
Inrush Current Limiter SMART HotPlugt • Integrated Power Device • Temperature Sensing Diode in Power MOSFET
• Adjustable Current Limit • Adjustable UVLO and OVLO
Vin (V) Package
Device
Min
Max
RDS(on) (mW)
ID Avg (A)
Typ
Max
Thermal Option
Thermal Limit
Thermal Limit Hysteresis
Typ 5C
Typ 5C
7 Input + 8 1 7
CASE 553AA−01 S−PAK EX SUFFIX
Voltage Regulator Thermal Shutdown
6 UVLO/ ENABLE
4, 8 Drain
Undervoltage Lockout
CASE 751−07 SOIC−8 NB
8 1
5 OVLO
Overvoltage Shutdown
3 Current Limit
Current Limit
Input − 1, 2
SPAK
NIS5101E1T1
18
110
43
6.5
Latch Off
135
40
SPAK
NIS5101E2T1
18
110
43
6.5
Auto−Retry
135
40
SPAK
NIS5101E1T1G
18
110
43
6.5
Latch Off
135
40
SPAK
NIS5101E2T1G
18
110
43
6.5
Auto−Retry
135
40
SPAK
NIS5131E1T1
18
90
30
7.8
Latch Off
135
40
SPAK
NIS5131E2T1
18
90
30
7.8
Auto−Retry
135
40
SPAK
NIS5131E1T1G
18
90
30
7.8
Latch Off
135
40
SPAK
NIS5131E2T1G
18
90
30
7.8
Auto−Retry
135
40
SO−8
NIS5111D1R2
18
110
90
3.0
Latch Off
135
40
SO−8
NIS5111D2R2
18
110
90
3.0
Auto−Retry
135
40
http://onsemi.com 314
SMART HotPlugt (continued) Vin (V) Package
Device
Min
RDS(on) (mW)
ID Avg (A)
Typ
Max
Max VCC 13
Voltage Regulator
ÎÎ Î ÎÎ ÎÎ CASE 488AB−01 9x9 MM, 12 PIN PLLP
Thermal Option
Thermal Limit
Thermal Limit Hysteresis
Typ 5C
Typ 5C
Ccharge 5
Charge Pump Current Limit
Thermal Shutdown
10, 11, 12 Source 2 UVLO
1 OVLO
Undervoltage Lockout
6 Current Limit 7 Power Good/ Power Good
Common Shutdown
Power Good
Enable/ Timer
Overvoltage Shutdown
4 GND
3 Enable/Timer QFN 9x9
NIS5102QP1H
9
18
10
10
Latch Off
135
40
QFN 9x9
NIS5102QP2H
9
18
10
10
Auto−Retry
135
40
VCC
Charge Pump
Voltage Regulator
Current Limit 8 1
Current Limit
Overvoltage Clamp
CASE 751−07 SOIC−8 NB
Source
Thermal Latch Voltage Slew Rate
Enable/ Timer
SO−8
NIS5112D1R2SG
9.0
SO−8
NIS5112D2R2SG
9.0
Enable/Timer 18 30 18
GND
30
http://onsemi.com 315
3.0 3.0
dv/dt Latch Off Auto−Retry
135
40
135
40
Hybrid Diode IC Better Efficiency Rectification System, BERSt IC • Integrated Power Device • Low Forward Drop
• Can be used in High Side and Low Side Configurations • Gate Drive Available to Parallel Additional MOSFETs Vin (V)
Typ
Device
RDS(on) VGS = 5.0 V ID = 10 A (mW)
IFAV Avg (A) Max
Max
Fet Turn−On Time Imax = 3.0 A, Irev = 1.0 A, Vrev = 5.0 V Typ (nsec)
MARKING DIAGRAM
Reg In
1 CASE 488AC PLLP32
Turnoff Propagation Delay Time VDS = Voffset to ID = 0 A Typ (nsec) Cathode
Voltage Regulator
NIS6111 AWLYYWW Bias
1
32
− +
NIS6111= Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week NIS6111QP
0.8
24
Gate 30
Anode
3.7
45
35
Oscillator Frequency fosc Typ (MHz)
RDS(on) High Side FET (Typ) W
RDS(on) Low Side FET (Typ) W
Floating, Regulated Charge Pump
Device
Idavg, Drive Current Max (A)
VCC (V)
VCC
0.50 V
MARKING DIAGRAM
Regulator 15 V
8 CASE 751−07 SOIC−8 NB
8
+ −
NIS6201 ALYWX
1
+ −
1 A L Y W
150 mV
= Assembly Location = Wafer Lot = Year = Work Week
DRIVE 1.0 MHz Oscillator
SIGGND NIS6201
−0.3 to 18
Overcharge
COMP
0.05
1.0
http://onsemi.com 316
VREG 20
PWRGND 20
MOSFET with Buffered Gate (Power Good FET for −48 V Applications) Device
VDSS (V)
VGATE 1 (V) Max
RDS(on) VGS = 4.5 V ID = 100 mA Typ W
VGATE 2 (V) Max
PD (W) Max
Drain 2, 4, 5
100 kW
6
6
Gate 2
CASE 318G−02 TSOP−6 1
1 Gate 1 NUD3048M
100
15
3 Source
100
0.65
1.25
Overvoltage Protection IC with Integrated P−Channel MOSFET Device
VCC (V)
VDSS (V) Max
ID (A), Steady State
RDS(on) (mW) Typ VGS = −4.5 V ID (Notes 9 and 10)
Vth (V) Typ
PIN ASSIGNMENT
8
CASE TBD Micro8 Leadless
1
VCC
8
OUT
7
GATE
6
1
IN
2
GND
3
CNTR
4
DRAIN
GND
DRAIN SRC
AC/DC Adapter of Accessory Charger
5
VCC P−CH
Schottky Diode
IN Undervoltage Lock Out +
Logic
−
GATE + C1
FET Driver
LOAD
OUT
Vref NUSx045 CNTR
GND
Microprocessor Port NUS2045MN
3 to 25
20
−2.4
70 (Note 9)
6.85
NUS3045MN
3 to 25
30
−3.7
68 (Note 10)
6.85
9. ID = −1.6 A 10. ID = −2.7 A
http://onsemi.com 317
Alphanumeric Parts Index
http://onsemi.com 318
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
1.5KE100A
216
1.5SMC27A
229
1N5349B
200
1.5KE10A
216
1.5SMC30A
229
1N5350B
200
1.5KE11A
216
1.5SMC33A
229
1N5351B
200
1.5KE120A
216
1.5SMC36A
229
1N5352B
200
1.5KE12A
216
1.5SMC39A
229
1N5353B
200
1.5KE130A
216
1.5SMC43A
229
1N5354B
200
1.5KE13A
216
1.5SMC47A
229
1N5355B
200
1.5KE150A
217
1.5SMC51A
229
1N5356B
200
1.5KE15A
216
1.5SMC56A
229
1N5357B
200
1.5KE160A
217
1.5SMC6.8A
229
1N5358B
200
1.5KE16A
216
1.5SMC62A
229
1N5359B
200
1.5KE170A
217
1.5SMC68A
229
1N5360B
201
1.5KE180A
217
1.5SMC7.5A
229
1N5361B
201
1.5KE18A
216
1.5SMC75A
229
1N5362B
201
1.5KE200A
217
1.5SMC8.2A
229
1N5363B
201
1.5KE20A
216
1.5SMC82A
229
1N5364B
201
1.5KE220A
217
1.5SMC9.1A
229
1N5365B
201
1.5KE22A
216
1.5SMC91A
229
1N5366B
201
1.5KE24A
216
1N4001
266
1N5367B
201
1.5KE250A
217
1N4002
266
1N5368B
201
1.5KE27A
216
1N4003
266
1N5369B
201
1.5KE30A
216
1N4004
266
1N5370B
201
1.5KE33A
216
1N4005
266
1N5371B
201
1.5KE36A
216
1N4006
266
1N5372B
201
1.5KE39A
216
1N4007
266
1N5373B
201
1.5KE43A
216
1N4933
266
1N5374B
201
1.5KE47A
216
1N4934
266
1N5375B
201
1.5KE51A
216
1N4935
266
1N5376B
201
1.5KE56A
216
1N4936
266
1N5377B
201
1.5KE6.8A
216
1N4937
266
1N5378B
201
1.5KE62A
216
1N5333B
200
1N5379B
201
1.5KE68A
216
1N5334B
200
1N5380B
201
1.5KE75A
216
1N5335B
200
1N5381B
201
1.5KE8.2A
216
1N5336B
200
1N5383B
201
1.5KE82A
216
1N5337B
200
1N5384B
201
1.5KE91A
216
1N5338B
200
1N5386B
201
1.5SMC10A
229
1N5339B
200
1N5388B
201
1.5SMC12A
229
1N5340B
200
1N5400
266
1.5SMC13A
229
1N5341B
200
1N5401
266
1.5SMC15A
229
1N5342B
200
1N5402
266
1.5SMC16A
229
1N5343B
200
1N5404
266
1.5SMC18A
229
1N5344B
200
1N5406
266
1.5SMC20A
229
1N5346B
200
1N5407
266
1.5SMC22A
229
1N5347B
200
1N5408
266
1.5SMC24A
229
1N5348B
200
1N5817
259
http://onsemi.com 319
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
1N5818
259
1N6285A
216
1PMT5931B
208
1N5819
259
1N6286A
216
1PMT5933B
208
1N5820
259
1N6287A
216
1PMT5934B
208
1N5821
259
1N6288A
216
1PMT5936B
208
1N5822
259
1N6289A
216
1PMT5939B
209
1N5908
215
1N6290A
216
1PMT5941B
209
1N5913B
200
1N6291A
216
1PMT7.0A
218
1N5919B
200
1N6292A
216
1SMA10A
220
1N5920B
200
1N6293A
216
1SMA10CA
221
1N5921B
200
1N6294A
216
1SMA11A
220
1N5924B
200
1N6295A
216
1SMA11CA
221
1N5927B
200
1N6297A
216
1SMA12A
220
1N5929B
200
1N6298A
216
1SMA12CA
221
1N5930B
200
1N6299A
217
1SMA13A
220
1N5931B
200
1N6300A
217
1SMA13CA
221
1N5932B
200
1N6301A
217
1SMA14CA
221
1N5934B
200
1N6302A
217
1SMA15A
220
1N5935B
201
1N6303A
217
1SMA15CA
221
1N5936B
201
1N6373
215
1SMA16A
220
1N5937B
201
1N6374
215
1SMA16CA
221
1N5938B
201
1N6376
215
1SMA17A
220
1N5940B
201
1N6377
215
1SMA18A
220
1N5941B
201
1N6379
215
1SMA18CA
221
1N5942B
201
1N6380
215
1SMA20A
220
1N5946B
201
1PMT12A
218
1SMA20CA
221
1N5948B
201
1PMT16A
218
1SMA22A
220
1N5953B
201
1PMT18A
218
1SMA22CA
221
1N5955B
201
1PMT22A
218
1SMA24A
220
1N5956B
201
1PMT24A
218
1SMA24CA
221
1N6267A
216
1PMT26A
218
1SMA26A
220
1N6269A
216
1PMT28A
218
1SMA26CA
221
1N6271A
216
1PMT30A
218
1SMA28A
220
1N6272A
216
1PMT33A
218
1SMA28CA
221
1N6273A
216
1PMT36A
218
1SMA30A
220
1N6274A
216
1PMT40A
218
1SMA30CA
221
1N6275A
216
1PMT5.0A
218
1SMA33A
220
1N6276A
216
1PMT5920B
208
1SMA33CA
221
1N6277A
216
1PMT5921B
208
1SMA36A
220
1N6278A
216
1PMT5922B
208
1SMA36CA
221
1N6279A
216
1PMT5923B
208
1SMA40A
220
1N6280A
216
1PMT5924B
208
1SMA40CA
221
1N6281A
216
1PMT5925B
208
1SMA43A
220
1N6282A
216
1PMT5927B
208
1SMA43CA
221
1N6283A
216
1PMT5929B
208
1SMA45A
220
1N6284A
216
1PMT5930B
208
1SMA48A
220
http://onsemi.com 320
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
1SMA48CA
221
1SMA64CA
221
1SMB30A
222
1SMA5.0A
220
1SMA7.0A
220
1SMB30CA
224
1SMA51A
220
1SMA7.5A
220
1SMB33A
222
1SMA51CA
221
1SMA70A
220
1SMB33CA
224
1SMA54A
220
1SMA70CA
221
1SMB36A
222
1SMA54CA
221
1SMA75A
220
1SMB36CA
224
1SMA58A
220
1SMA78CA
221
1SMB40A
222
1SMA58CA
221
1SMA8.0A
220
1SMB40CA
224
1SMA5913B
208
1SMA8.5A
220
1SMB43A
222
1SMA5914B
208
1SMA9.0A
220
1SMB43CA
224
1SMA5915B
208
1SMB100A
222
1SMB45A
222
1SMA5916B
208
1SMB10A
222
1SMB45CA
224
1SMA5917B
208
1SMB10CA
224
1SMB48A
222
1SMA5918B
208
1SMB110A
223
1SMB48CA
224
1SMA5919B
208
1SMB11A
222
1SMB5.0A
222
1SMA5920B
208
1SMB11CA
224
1SMB51A
222
1SMA5921B
208
1SMB120A
223
1SMB51CA
224
1SMA5922B
208
1SMB12A
222
1SMB54A
222
1SMA5923B
208
1SMB12CA
224
1SMB54CA
224
1SMA5924B
208
1SMB130A
223
1SMB58A
222
1SMA5925B
208
1SMB13A
222
1SMB58CA
224
1SMA5926B
208
1SMB13CA
224
1SMB5913B
208
1SMA5927B
208
1SMB14A
222
1SMB5914B
208
1SMA5928B
208
1SMB14CA
224
1SMB5915B
208
1SMA5929B
208
1SMB150A
223
1SMB5916B
208
1SMA5930B
208
1SMB15A
222
1SMB5917B
208
1SMA5931B
208
1SMB15CA
224
1SMB5918B
208
1SMA5932B
208
1SMB160A
223
1SMB5919B
208
1SMA5933B
208
1SMB16A
222
1SMB5920B
208
1SMA5934B
208
1SMB16CA
224
1SMB5921B
208
1SMA5935B
208
1SMB170A
223
1SMB5922B
208
1SMA5936B
208
1SMB17A
222
1SMB5923B
208
1SMA5937B
208
1SMB17CA
224
1SMB5924B
208
1SMA5938B
209
1SMB18A
222
1SMB5925B
208
1SMA5939B
209
1SMB18CA
224
1SMB5926B
208
1SMA5940B
209
1SMB20A
222
1SMB5927B
208
1SMA5941B
209
1SMB20CA
224
1SMB5928B
208
1SMA5942B
209
1SMB22A
222
1SMB5929B
208
1SMA5943B
209
1SMB22CA
224
1SMB5930B
208
1SMA5944B
209
1SMB24A
222
1SMB5931B
208
1SMA5945B
209
1SMB24CA
224
1SMB5932B
208
1SMA6.0A
220
1SMB26A
222
1SMB5933B
208
1SMA6.5A
220
1SMB26CA
224
1SMB5934B
208
1SMA60CA
221
1SMB28A
222
1SMB5935B
208
1SMA64A
220
1SMB28CA
224
1SMB5936B
208
http://onsemi.com 321
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
1SMB5937B
208
1SMC24A
228
2N4923
244
1SMB5938B
209
1SMC26A
228
2N5038
248
1SMB5939B
209
1SMC28A
228
2N5060
269
1SMB5940B
209
1SMC30A
228
2N5061
269
1SMB5941B
209
1SMC33A
228
2N5062
269
1SMB5942B
209
1SMC36A
228
2N5064
269
1SMB5943B
209
1SMC40A
228
2N5087
173, 179
1SMB5944B
209
1SMC43A
228
2N5088
174, 179
1SMB5945B
209
1SMC45A
228
2N5089
174, 179
1SMB5946B
209
1SMC48A
228
2N5190
245
1SMB5947B
209
1SMC5.0A
228
2N5191
245
1SMB5948B
209
1SMC51A
228
2N5192
245
1SMB5949B
209
1SMC54A
228
2N5194
245
1SMB5951B
209
1SMC58A
228
2N5195
245
1SMB5952B
209
1SMC6.0A
228
2N5302
248
1SMB5953B
209
1SMC6.5A
228
2N5401
182
1SMB5954B
209
1SMC60A
228
2N5457
191
1SMB5955B
209
1SMC64A
228
2N5458
191
1SMB5956B
209
1SMC7.0A
228
2N5460
191
1SMB6.0A
222
1SMC7.5A
228
2N5461
191
1SMB6.5A
222
1SMC70A
228
2N5462
191
1SMB60A
222
1SMC75A
228
2N5486
191
1SMB60CA
224
1SMC78A
228
2N5550
182
1SMB64A
222
1SMC8.0A
228
2N5551
182
1SMB64CA
224
1SMC8.5A
228
2N5631
248
1SMB7.0A
222
1SMC9.0A
228
2N5638
192
1SMB7.5A
222
1SS400T1
198
2N5639
192
1SMB70A
222
2N3055
247
2N5655
244
1SMB75A
222
2N3055A
247
2N5657
244
1SMB75CA
224
2N3442
247
2N5684
248
1SMB8.0A
222
2N3771
248
2N5686
248
1SMB8.5A
222
2N3772
248
2N5883
248
1SMB85A
222
2N3773
248
2N5884
248
1SMB9.0A
222
2N3819
191
2N5885
248
1SMB90A
222
2N3904
173, 183
2N5886
248
1SMC10A
228
2N3906
173, 183
2N6027
276
1SMC12A
228
2N4401
2N6028
276
1SMC13A
228
173, 180, 183
2N6031
248
2N4403
173, 180, 183
2N6034
249
2N6035
249
2N6036
249
2N6038
249
2N6039
249
2N6040
249
1SMC14A
228
1SMC15A
228
1SMC16A
228
1SMC17A
228
1SMC18A
228
1SMC20A
228
1SMC22A
228
2N4918
244
2N4919
244
2N4920
244
2N4921
244
2N4922
244
http://onsemi.com 322
Alphabetical Parts Listing Device Number
Page
Device Number
Page
2N6042
Page 249
Device Number 2N6505
271
BAT54CXV3T1
195
2N6043
249
2N6507
271
BAT54HT1
194
2N6045
249
2N6508
271
BAT54LT1
194
2N6052
250
2N6509
271
BAT54SLT1
194
2N6071A
272
2N6515
182
BAT54SWT1
194
2N6071B
272
2N6517
182
BAT54T1
194
2N6073A
272
2N6520
182
BAT54WT1
194
2N6073B
272
2N6609
248
BAT54XV2T1
195
2N6075A
272
2N6667
250
BAV199LT1
197
2N6075B
272
2N6668
250
BAV70DXV6T1
198
2N6107
246
2N7000
286
BAV70LT1
197
2N6109
246
2N7002L
281
BAV70TT1
198
2N6111
246
2SA1774
177
BAV70WT1
197
2N6282
250
2SA2029BM3T5G
177
BAV74LT1
197
2N6284
250
2SC2712GT1
176
BAV99LT1
197
2N6286
250
2SC4617
177
BAV99RWT1
197
2N6287
250
74VCXH16245
155
BAV99WT1
197
2N6288
246
74VCXH245
155
BAW56DXV6T1
198
2N6292
246
80SQ045N
259
BAW56LT1
197
2N6338
248
BAL99LT1
197
BAW56TT1
198
2N6341
248
BAS116LT1
197
BAW56WT1
197
2N6344
273
BAS16DXV6T1
198
BC182
173
2N6344A
274
BAS16HT1
198
BC182A
173
2N6348A
274
BAS16LT1
197
BC182B
173
2N6349A
274
BAS16M3T5G
198
BC212B
173
2N6387
250
BAS16TT1
198
BC237
173
2N6388
250
BAS16WT1
197
BC237B
173
2N6394
271
BAS16XV2T1
198
BC237C
173
2N6395
271
BAS19LT1
197
BC239C
174
2N6397
271
BAS20HT1
198
BC307B
173
2N6399
271
BAS20LT1
197
BC307C
2N6400
271
BAS21DW5T1
198
BC327
173, 180
2N6401
271
BAS21HT1
198
BC327−16
173, 180
2N6402
271
BAS21LT1
197
BC327−25
173, 180
2N6403
271
BAS21SLT1
197
BC327−40
173, 180
2N6404
271
BAS40−04LT1
194
BC337
173, 180
2N6405
271
BAS40−06LT1
194
BC337−16
173, 180
2N6426
179
BAS40LT1
194
BC337−25
173, 180
2N6427
179
BAS70−04LT1
194
BC337−40
173, 180
2N6487
246
BAS70LT1
194
BC338−25
174, 180
2N6488
246
BAT54ALT1
194
BC368
174, 180
2N6490
246
BAT54AWT1
194
BC369
174, 180
2N6491
246
BAT54CLT1
194
BC372
179
2N6497
245
BAT54CTT1
194
BC373
179
2N6504
271
BAT54CWT1
194
BC447
173, 180
http://onsemi.com 323
173
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
BC449
173
BC846BWT1
176
BC858ALT1
176
BC449A
173
BC847ALT1
175
BC858AWT1
176
BC487
173, 180
BC847AWT1
176
BC858BLT1
176
BC487B
173, 180
BC847BDW1T1
178
BC858BWT1
176
BC488B
173, 180
BC847BLT1
175
BC858CDW1T1
178
BC489
173, 180
BC847BM3T5G
177
BC858CDXV6T1
178
BC489A
173, 180
BC847BPDW1T1
178
BC858CLT1
176
BC489B
173, 180
BC847BPDXV6T1
178
BC859BLT1
176
BC490
173, 180
BC847BTT1
177
BC859CLT1
BC490A
173, 180
BC847BWT1
176
BCP53−10T1
177, 181
176
BC517
179
BC847CDW1T1
178
BCP53−16T1
177, 181
BC546B
173
BC847CDXV6T1
178
BCP53T1
177, 181
BC547A
173
BC847CLT1
175
BCP56−10T1
177, 181
BC547B
173
BC847CM3T5G
177
BCP56−16T1
177, 181
BC547C
173
BC847CPDW1T1
178
BCP56T1
177, 181
BC548B
174
BC847CTT1
177
BCP68T1
177, 181
BC548C
174
BC847CWT1
176
BCP69T1
177, 181
BC550C
173, 179
BC848ALT1
175
BCW30LT1
175
BC556B
173
BC848AWT1
176
BCW32LT1
175
BC557A
173
BC848BLT1
175
BCW33LT1
176
BC557B
173
BC848BWT1
176
BCW65ALT1
175, 181
BC557C
173
BC848CDW1T1
178
BCW65CLT1
175
BC558B
174
BC848CDXV6T1
178
BCW66GLT1
181
BC558C
174
BC848CLT1
175
BCW68GLT1
175, 181
BC560C
173, 179
BC848CPDW1T1
178
BCW70LT1
175
BC618
179
BC848CWT1
176
BCW72LT1
175
BC635
173, 180
BC849BLT1
176
BCX17LT1
175, 181
BC637
173, 180
BC850BLT1
175
BCX18LT1
176, 181
BC638
173, 180
BC850CLT1
175
BCX19LT1
175, 181
BC639
173, 180
BC856ALT1
175
BD135
244
BC639−16
173, 180
BC856BDW1T1
178
BD136
244
BC640
173, 180
BC856BLT1
175
BD137
244
BC640−16
173, 180
BC856BM3T5G
177
BD138
244
BC807−16LT1
175
BC856BWT1
176
BD139
244
BC807−25LT1
175
BC857ALT1
175
BD140
244
BC807−40LT1
175
BC857BDW1T1
178
BD159
244
BC817−16LT1
175
BC857BLT1
175
BD179
244
BC817−25LT1
175
BC857BM3T5G
177
BD180
244
BC817−40LT1
175
BC857BTT1
177
BD234
244
BC846ALT1
175
BC857BWT1
176
BD237
244
BC846AWT1
176
BC857CDW1T1
178
BD238
244
BC846BDW1T1
178
BC857CLT1
175
BD241C
245
BC846BLT1
175
BC857CM3T5G
177
BD242B
245
BC846BM3T5G
177
BC857CTT1
177
BD242C
245
BC846BPDW1T1
178
BC857CWT1
176
BD243B
246
http://onsemi.com 324
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
BD243C
246
BF256A
191
BZX84B18L
204
BD244B
246
BF393
182
BZX84B5V1L
204
BD244C
246
BF422
182
BZX84B5V6L
204
BD249C
247
BF423
182
BZX84B6V2L
204
BD435
245
BF493S
182
BZX84C10E
204
BD436
245
BF720T1
182
BZX84C10L
204
BD437
245
BF721T1
182
BZX84C11L
204
BD438
245
BF959
183
BZX84C12E
204
BD439
245
BFR30LT1
191
BZX84C12L
204
BD440
245
BFR31LT1
191
BZX84C13L
204
BD441
245
BS107
286
BZX84C15E
204
BD442
245
BS107A
286
BZX84C15L
204
BD675
249
BS108
286
BZX84C16E
204
BD675A
249
BS170
286
BZX84C16L
204
BD676
249
BSP16T1
182
BZX84C18E
204
BD676A
249
BSP19AT1
182
BZX84C18L
204
BD677
249
BSP52T1
179
BZX84C20L
204
BD677A
249
BSR58LT1
192
BZX84C22L
204
BD678
249
BSS123L
281
BZX84C24E
204
BD678A
249
BSS138L
281
BZX84C24L
204
BD679
249
BSS63LT1
175
BZX84C27E
204
BD679A
249
BSS64LT1
175
BZX84C27L
204
BD680
249
BSS84L
282
BZX84C2V4L
204
BD680A
249
BSV52LT1
183
BZX84C2V7L
204
BD681
249
BU323Z
250
BZX84C30L
204
BD682
249
BU406
246
BZX84C33L
204
BD787
245
BU407
246
BZX84C36L
205
BD788
245
BUB323Z
249
BZX84C39L
205
BD809
246
BUH100
246, 252
BZX84C3V0L
204
BD810
246
BUH150
246, 252
BZX84C3V3E
204
BDV64B
250
BUH50
245, 252
BZX84C3V3L
204
BDV65B
250
BUH51
244, 252
BZX84C3V6L
204
BDW42
250
BUL146
246, 252
BZX84C3V9L
204
BDW46
250
BUL146F
247, 252
BZX84C43E
205
BDW47
250
BUL147
246, 252
BZX84C43L
205
BDX33B
250
BUL44
245, 252
BZX84C47L
205
BDX33C
250
BUL45
245, 252
BZX84C4V3L
204
BDX34B
250
BUL45D2
245, 252
BZX84C4V7E
204
BDX34C
250
BUV21
248
BZX84C4V7L
204
BDX53B
249
BUV22
248
BZX84C51L
205
BDX53C
249
BUV26
246
BZX84C56L
205
BDX54B
249
BUV27
246
BZX84C5V1E
204
BDX54C
249
BUX85
245
BZX84C5V1L
204
BF245A
191
BZG03C15
208
BZX84C5V6E
204
BF245B
191
BZG03C150
209
BZX84C5V6L
204
http://onsemi.com 325
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
BZX84C62L
205
CS8151/C
79
DTA123EET1
186
BZX84C68L
205
CS8151C
82
DTA123EM3T5G
186
BZX84C6V2E
204
CS8156
DTA123JET1
186
BZX84C6V2L
204
80, 89, 90, 94, 113
DTA123JM3T5G
186
BZX84C6V8E
204
CS8161
80, 89, 90, 94, 113
DTA124EET1
186
BZX84C6V8L
204
CS8182
186
205
79, 80, 84, 90, 92, 113
DTA124EM3T5G
BZX84C75L
DTA124XET1
186
BZX84C7V5E
204
CS8183
80, 88, 94
DTA124XM3T5G
186
BZX84C7V5L
204
CS8190
186
204
107, 108, 112
DTA143EET1
BZX84C8V2L
DTA143EM3T5G
186
DTA143TET1
186
DTA143TM3T5G
186
DTA143ZET1
186
DTA143ZM3T5G
186
DTA144EET1
186
DTA144EM3T5G
186
DTA144TT1
185
DTA144WET1
186
DTA144WM3T5G
186
DTC114EET1
186
DTC114EM3T5G
186
DTC114TET1
186
DTC114TM3T5G
186
DTC114YET1
186
DTC114YM3T5G
186
DTC115EET1
186
DTC115EM3T5G
186
DTC123EET1
186
DTC123EM3T5G
186
DTC123JET1
186
DTC123JM3T5G
186
DTC124EET1
186
DTC124EM3T5G
186
DTC124XET1
186
DTC124XM3T5G
186
DTC143EET1
186
DTC143EM3T5G
186
DTC143TET1
186
DTC143TM3T5G
186
DTC143ZET1
186
DTC143ZM3T5G
186
DTC144EET1
186
DTC144EM3T5G
186
DTC144TM3T5G
186
BZX84C9V1L
204
C106B
269
C106D
269
C106D1
269
C106M
269
C106M1
269
CS1124
108, 112
CS3341
99, 100, 108, 111
CS3351
99, 100, 108, 111
CS3361 CS4121 CS4122 CS4192
108, 111 107, 108, 112 107, 108, 112 107, 108, 112
CS51021A
114
CS51022A
114
CS51221
114
CS5124 CS5157H
114 73
CS5165A
73, 114
CS5253−1
80, 87
CS5253B−8
79, 87
CS5301
114
CS8101
79, 82, 90, 91, 113
CS8122 CS8126 CS8126−1 CS8129 CS8151
79, 86, 90, 93, 113 79, 90, 93, 113 86 79, 86, 90, 93, 113 82, 90, 91, 113
CS8321
79, 83, 90, 92, 113
CS8361
80, 88, 90, 94, 113
CS8363
80, 88, 90, 94, 113
CS8371
80, 88, 90, 94, 113
CS9201
79, 81, 90, 91, 113
CS9202
79, 81, 90, 91, 113
D44C12
245
D44H11
246
D44H8
246
D44VH10
246
D45C12
245
D45H11
246
D45H8
246
D45VH10
246
DA121TT1
198
DAC−08
10
DAN222
198
DAN222M3T5G
198
DAP202U
197
DAP222
198
DAP222M3T5G
198
DF3A6.8FU
233
DF6A6.8FU
236, 299
DTA114EET1
186
DTA114EM3T5G
186
DTA114TET1
186
DTA114TM3T5G
186
DTA114YET1
186
DTA114YM3T5G
186
DTA115EET1
186
DTA115EM3T5G
186
http://onsemi.com 326
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
DTC144TT1
185
LM239
17, 19
M1MA152AT1
197
DTC144WET1
186
LM258
10, 13
M1MA152KT1
197
DTC144WM3T5G
186
LM285
74, 75
M1MA152WAT1
197
EMA6DXV5T5
188
LM2901
17, 19
M1MA152WKT1
197
EMC2DXV5T5
188
LM2902
10, 15
M1MA174T1
197
EMC3DXV5T5
188
LM2902V
15
MA3075WAL
232
EMC4DXV5T5
188
LM2903
17, 18
MAC08BT1
272
EMC5DXV5T5
188
LM2904
10, 13
MAC08MT1
272
EMD4DXV6T1
188
LM293
17, 18
MAC12D
274
EMF18XV6T5
189
LM2931
82
MAC12HCD
274
EMF23XV6T5
189
LM2931/A
79
MAC12HCM
274
EMF5XV6T5
189
LM2931AC
80
MAC12HCN
274
EMG2DXV5T5
188
LM2931C
80
MAC12M
274
EMG5DXV5T5
188
LM301A
10, 11
MAC12N
274
EMT1DXV6T1
178
LM311
17, 18
MAC12SM
274
EMT2DXV6T1
178
LM317
76, 78
MAC12SN
274
EMX1DXV6T1
178
LM317L
76, 77
MAC15A10
274
EMX2DXV6T1
178
LM317M
76, 77
MAC15A6
274
EMZ1DXV6T1
178
LM323
78
MAC15A8
274
ESD5Z2.5
231
LM323/A
76
MAC15M
274
ESD5Z3.3
231
LM324
10, 15
MAC15N
274
ESD5Z5.0
231
LM337
76, 78
MAC15SD
274
ESD5Z6.0
231
LM339
17, 19
MAC15SM
274
ESD5Z7.0
231
LM350
76, 78
MAC15SN
274
HN1B01FDW1T1
184
LM358
10, 13
MAC16CM
274
HN2D02FUTW1T1
198
LM385
74, 75
MAC16CN
274
ICTE−12
215
LM393
17, 18
MAC16D
274
ICTE−15
215
LM833
10, 13
MAC16M
274
ICTE−18
215
LP2950
82
MAC16N
274
ICTE−36
215
LP2950C/AC
79
MAC210A10
274
ICTE−5
215
LP2951
82
MAC210A8
274
IMH20TR1
187
LP2951AC
80
MAC212A10
274
J110
192
LP2951C
80
MAC212A8
274
J111
192
LP2951C/AC
79
MAC228A10
273
J112
192
LV2209
193
MAC228A4
273
J309
191
M1MA141KT1
197
MAC228A6
273
J310
191
M1MA141WAT1
197
MAC228A8
273
191, 192
M1MA141WKT1
197
MAC4DCM−1
273
JFETs JLC1562
M1MA142KT1
197
MAC4DCMT4
273
79, 82
M1MA142WAT1
197
MAC4DCN−1
273
LC03−6
239, 300
M1MA142WKT1
197
MAC4DCNT4
273
LM201A
10, 11
M1MA151AT1
197
MAC4DHM−1
272
11
M1MA151KT1
197
MAC4DHMT4
272
L4949
LM201AV
166
LM211
17, 18
M1MA151WAT1
197
MAC4DLM−1
272
LM224
10, 15
M1MA151WKT1
197
MAC4DLMT4
272
http://onsemi.com 327
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
MAC4DSM−1
273
MBR1060
260
MBR6045PT
261
MAC4DSMT4
273
MBR1080
260
MBR6045WT
261
MAC4DSN−1
273
MBR1090
260
MBR7030WT
261
MAC4DSNT4
273
MBR1100
259
MBR735
260
MAC4M
273
MBR120ESFT1
255
MBR745
260
MAC4N
273
MBR120ESFT3
255, 257
MBRA120ET3
255, 257
MAC8D
273
MBR120LSFT1
255
MBRA130LT3
257
MAC8M
273
MBR120LSFT3
255, 257
MBRA140T3
257
MAC8N
273
MBR120VLSFT1
255
MBRA160T3
MAC8SD
273
MBR120VLSFT3
255, 257
MBRA210ET3
255, 257
MAC8SM
273
MBR130LSFT1
255, 257
MBRA210LT3
255, 257
MAC8SN
273
MBR130T3
257
MBRA340T3
257
MAC97A4
272
MBR130T1
257
MBRB1545CT
259
MAC97A6
272
MBR140SFT1
257
MBRB20100CT
259
MAC97A8
272
MBR140SFT3
257
MBRB20200CT
255, 259
MAC997A6
272
MBR150
259
MBRB20200CT4
255
MAC997A8
272
MBR1535CT
260
MBRB2060CT
259
MAC997B6
272
MBR1545CT
260
MBRB2515L
255, 259
MAC997B8
272
MBR160
259
MBRB2535CTL
255, 259
MAC9D
273
MBR16100CT
260
MBRB2545CT
MAC9M
273
MBR1635
260
MBRB3030CT
MAC9N
273
MBR1645
260
MBRB3030CTL
MAX1720
115
MBR20100CT
260
MBRB4030
MAX707
96
MBR20200CT
255, 260
MBRD1035CTL
MAX708
96
MBR2030CTL
255, 260
MBRD320T4
258
MAX809
96, 97
MBR2045CT
260
MBRD330T4
258
MAX810
96, 97
MBR2060CT
260
MBRD340T4
258
MAX828
115
MBR2080CT
260
MBRD350T4
258
MAX829
115
MBR2090CT
260
MBRD360T4
258
MBD101
194
MBR2515L
255, 260
MBRD620CTT4
258
MBD110DWT1
195
MBR2535CTL
255, 260
MBRD630CTT4
258
MBD301
194
MBR2545CT
260
MBRD640CTT4
258
MBD330DWT1
195
MBR3045PT
261
MBRD660CTT4
258
MBD54DWT1
195
MBR3045WT
261
MBRD835L
MBD701
194
MBR3100
259
MBRF20100CT
260
195
255, 260
MBD770DWT1
257
259 259 255, 259 259 255, 258
255, 258
MBR340
259
MBRF20200CT
MBR0520LT1
255, 257
MBR350RL
259
MBRF2545CT
MBR0520LT3
255, 257
MBR360RL
259
MBRF40250
255, 260
260
MBR0530T1
257
MBR4015CTL
260
MBRF40250T
255, 260
MBR0530T3
257
MBR4015LWT
261
MBRM110ET1
255, 257
MBR0540T1
257
MBR4015WT
255
MBRM110ET3
255, 257
MBR0540T3
257
MBR40250
255, 260
MBRM110LT1
255, 257
MBR10100
260
MBR40250T
255, 260
MBRM110LT3
255, 257
MBR1035
260
MBR4045PT
261
MBRM120ET1
255, 257
MBR1045
260
MBR4045WT
261
MBRM120ET3
257
http://onsemi.com 328
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
MBRM120LT1
257
MC100E016
138
MC100EL04
137
MBRM120LT3
257
MC100E101
137
MC100EL05
137
MBRM130LT1
257
MC100E104
137
MC100EL07
137
MBRM130LT3
257
MC100E107
137
MC100EL11
123
MBRM140T3
257
MC100E111
123
MC100EL12
143
MBRP20030CTL
255, 261
MC100E112
143
MC100EL13
123
MBRP20045CT
261
MC100E116
140
MC100EL14
123
MBRP20060CT
261
MC100E122
143
MC100EL15
123
MBRP30045CT
261
MC100E131
131
MC100EL16
140
MBRP30060CT
261
MC100E136
138
MC100EL1648
130
MBRP400100CTL
255, 261
MC100E137
138
MC100EL17
140
MBRP40045CTL
255, 261
MC100E141
134
MC100EL29
131
MBRP60035CTL
255, 261
MC100E142
134
MC100EL30
131
MBRS1100T3
258
MC100E143
134
MC100EL31
131
MBRS120T3
258
MC100E150
133
MC100EL32
125
MBRS130LT3
255, 258
MC100E151
133, 134
MC100EL33
125
MBRS130T3
258
MC100E154
133, 135
MC100EL34
125
MBRS140LT3
258
MC100E155
133, 135
MC100EL35
131
MBRS140T3
258
MC100E156
133, 135
MC100EL38
125
MBRS1540T3
258
MC100E157
135
MC100EL39
125
MBRS190T3
258
MC100E158
135
MC100EL51
131
MBRS2040LT3
258
MC100E163
135
MC100EL52
131
MBRS230LT3
255, 258
MC100E164
135
MC100EL56
135
MBRS240LT3
258
MC100E166
139
MC100EL57
135
MBRS260T3
258
MC100E167
135
MC100EL58
135
MBRS3100T3
258
MC100E171
135
MC100EL59
135
MBRS3200T3
255, 258
MC100E175
133
MC100EL90
121
MBRS3201T3
255, 258
MC100E193
139
MC100EL91
121
MBRS320T3
258
MC100E195
126
MC100ELT20
121
MBRS330T3
258
MC100E196
126
MC100ELT21
121
MBRS340T3
258
MC100E210
123
MC100ELT22
121
MBRS360T3
258
MC100E211
123
MC100ELT23
121
MBRS410ET3
255, 258
MC100E212
134, 143
MC100ELT24
121
MBRS410LT3
255, 258
MC100E241
134
MC100ELT25
121
MBRS4201T3
255, 258
MC100E256
135
MC100ELT28
121
MBRS540T3
258
MC100E310
123
MC100EP01
137
178, 184
MC100E404
137
MC100EP016A
138
190
MC100E416
140
MC100EP05
137
MBT3904DW1T1
178, 184
MC100E431
131
MC100EP08
137
MBT3906DW1T1
178, 184
MC100E445
136
MC100EP101
137
MBT3946DW1T1
178, 184
MC100E446
136
MC100EP105
137
MBT6429DW1T1
178
MC100E451
134
MC100EP11
123
MC10/100E160
139
MC100E452
134
MC100EP116
140
MC10/100EP16VB
140
MC100E457
135
MC100EP131
131, 134
MC10/100EP16VC
140
MC100EL01
137
MC100EP139
125
MBT2222ADW1T1 MBT35200MT1
http://onsemi.com 329
Alphabetical Parts Listing Device Number
Page
Device Number
Page
MC100EP14
123
MC100LVEL05
137
MC10E143
134
MC100EP140
130
MC100LVEL11
123
MC10E150
133
MC100EP142
134
MC100LVEL12
143
MC10E151
133, 134
MC100EP16
140
MC100LVEL13
123
MC10E154
133, 135
MC100EP16F
140
MC100LVEL14
123
MC10E155
133, 135
MC100EP16T
140
MC100LVEL16
141
MC10E156
133, 135
MC100EP16VA
140
MC100LVEL17
141
MC10E157
135
MC100EP16VB
140
MC100LVEL29
131
MC10E158
135
MC100EP16VC
140
MC100LVEL30
131
MC10E163
136
MC100EP16VS
140
MC100LVEL31
131
MC10E164
136
MC100EP16VT
141
MC100LVEL32
125
MC10E1651
17, 139
MC100EP17
141
MC100LVEL33
125
MC10E1652
17, 139
MC100EP195
126
MC100LVEL34
125
MC10E166
139
MC100EP196
126
MC100LVEL37
125
MC10E167
136
MC100EP210S
123
MC100LVEL38
125
MC10E171
136
MC100EP29
131
MC100LVEL39
125
MC10E175
133
MC100EP31
131
MC100LVEL40
130
MC10E195
126
MC100EP32
125
MC100LVEL51
132
MC10E196
126
MC100EP33
125
MC100LVEL56
135
MC10E211
123
MC100EP35
131
MC100LVEL58
135
MC10E212
143
MC100EP40
130
MC100LVEL59
135
MC10E404
137
MC100EP445
136
MC100LVEL90
121
MC10E411
123
MC100EP446
136
MC100LVEL91
121
MC10E416
141
MC100EP451
134
MC100LVEL92
121
MC10E431
132
MC100EP51
131
MC100LVELT22
121
MC10E445
136
MC100EP52
131
MC100LVELT23
121
MC10E446
136
MC100EP56
135
MC100LVEP11
123
MC10E451
134
MC100EP57
135
MC100LVEP111
123
MC10E452
134
MC100EP58
135
MC100LVEP14
123
MC10E457
136
MC100EP809
123
MC100LVEP16
141
MC10EL01
137
MC100EP90
121
MC100LVEP210
123
MC10EL04
137
MC100EPT20
121
MC100LVEP34
125
MC10EL05
137
MC100EPT21
121
MC10E016
138
MC10EL07
137
MC100EPT22
121
MC10E101
137
MC10EL11
123
MC100EPT23
121
MC10E104
137
MC10EL12
143
MC100EPT24
121
MC10E107
137
MC10EL15
124
MC100EPT25
121
MC10E111
123
MC10EL16
141
MC100EPT26
121
MC10E112
143
MC10EL30
132
MC100EPT622
121
MC10E116
141
MC10EL31
132
MC100LVE111
123
MC10E122
143
MC10EL32
125
MC100LVE164
135
MC10E131
132
MC10EL33
125
MC100LVE210
123
MC10E136
138
MC10EL34
125
MC100LVE222
125
MC10E137
138
MC10EL35
132
MC100LVE310
123
MC10E141
134
MC10EL51
132
MC100LVEL01
137
MC10E142
134
MC10EL52
132
http://onsemi.com 330
Device Number
Page
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
MC10EL56
136
MC10LVEP11
124
MC14073B
165
MC10EL57
136
MC10LVEP16
142
MC14076B
165
MC10EL58
136
MC12026A
127
MC14077B
165
MC10ELT20
121
MC12080
127
MC1408
MC10ELT21
121
MC12093
127
MC14081B
165
MC10ELT22
122
MC12095
127
MC14082B
165
MC10ELT24
122
MC14001B
164
MC14093B
165
MC10ELT25
122
MC14001UB
164
MC14094B
165
MC10ELT28
122
MC14007UB
164
MC14099B
165
MC10EP01
137
MC14008B
164
MC14106B
165
MC10EP05
137
MC14011B
164
MC1413
MC10EP08
138
MC14011UB
164
MC10EP101
138
MC14012B
164
MC10EP105
138
MC14013B
164
MC10EP11
124
MC14014B
164
MC10EP116
141
MC14015B
164
MC10EP131
132
MC14016B
164
MC10EP139
125
MC14017B
164
MC10EP142
134
MC14018B
164
MC10EP16
141
MC14020B
164
MC10EP16T
141
MC14021B
164
MC10EP16VA
141
MC14022B
164
MC10EP16VB
141
MC14023B
164
MC10EP16VC
141
MC14024B
164
MC10EP16VT
141
MC14025B
164
MC10EP17
142
MC14027B
164
MC10EP195
126
MC14028B
164
MC10EP196
126
MC14029B
164
MC10EP29
132
MC1403
74, 75
MC10EP31
132
MC14040B
164
MC10EP32
125
MC14042B
164
MC10EP33
126
MC14043B
164
MC10EP35
132
MC14044B
164
MC10EP445
136
MC14046B
164
MC10EP446
136
MC14049B
164
MC10EP451
134
MC14049UB
164
MC10EP51
132
MC14050B
164
MC10EP52
132
MC14051B
164
MC10EP56
136
MC14052B
164
MC10EP57
136
MC14053B
165
MC10EP58
136
MC14066B
165
MC10EP90
122
MC14067B
165
MC10EPT20
122
MC14069UB
165
MC10H141
134
MC14070B
165
MC10LVEL58
136
MC14071B
165
http://onsemi.com 331
10
99, 103, 104, 107
MC14174B
165
MC14175B
165
MC14490
165
MC14503B
165
MC14504B
165
MC14511B
165
MC14512B
165
MC14513B
165
MC14514B
165
MC14515B
165
MC14516B
165
MC14517B
165
MC14518B
165
MC14520B
165
MC14521B
165
MC14526B
165
MC14528B
165
MC14532B
165
MC14536B
165
MC14538B
166
MC14541B
166
MC14543B
166
MC14549B
166
MC1455
105
MC14551B
166
MC14553B
166
MC14555B
166
MC14556B
166
MC14557B
166
MC14559B
166
MC14562B
166
MC14569B
166
MC14572UB
166
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
MC14584B
166
MC33375
79, 85
MC74AC253
162
MC14585B
166
MC33470
114
MC74AC257
163
MC14598B
166
MC33501
10, 11
MC74AC259
163
MC1488
103, 104
MC33502
10, 14
MC74AC273
163
MC1489
103, 104
MC33503
10, 11
MC74AC32
162
MC1496
105, 115
MC33560
117
MC74AC373
163
MC26LS30
103, 104
MC33565
76, 77, 79, 84, 114
MC74AC374
163
MC74AC377
163
MC33567
80, 87, 114, 115
MC74AC4040
163
MC74AC540
163
MC74AC541
163
MC74AC573
163
80, 87, 115
MC74AC574
163
MC3302 MC3303
17, 19 10, 15
MC33030
107, 110
MC33033
107, 112
MC33035
107, 112
MC33039
107, 110
MC33064
96, 97
MC3403
10, 16
MC74AC646
163
MC33071
10, 11
MC34064
96, 97
MC74AC652
163
MC33072
10, 13
MC34071
10, 12
MC74AC74
162
MC33074
10, 15
MC34072
10, 14
MC74AC86
162
MC33077
10, 13
MC34074
10, 16
MC74ACT00
161
MC33078
10, 13
MC34151
99, 100
MC74ACT02
161
MC33079
10, 15
MC34152
99, 100
MC74ACT04
161
MC33151
99, 100
MC34160
76, 77, 96
MC74ACT05
161
MC33152
99, 100
MC34161
96, 97
MC74ACT08
161
MC33153
99, 100
MC34164
96, 97
MC74ACT10
161
MC33160
76, 77, 90, 91, 96, 113
96, 97
MC74ACT11
161
MC74ACT125
162
MC74ACT132
162
MC74ACT138
162
MC74ACT139
162
MC74ACT14
161
MC74ACT157
162
MC74ACT20
162
MC74ACT240
162
MC74ACT241
162
MC74ACT244
162
MC74ACT245
162
MC74ACT253
162
MC74ACT257
163
MC74ACT259
163
MC74ACT273
163
MC74ACT32
162
MC74ACT373
163
MC74ACT374
163
MC74ACT377
163
MC74ACT540
163
MC33761
79, 81
MC33762
80, 81, 87, 115
MC33765
MC3423 MC34268
79, 86, 103, 114
MC33161
96, 97
MC33164
96, 97
MC33170
115
MC33171
10, 11
MC74AC00
161
MC33172
10, 13
MC74AC02
161
13
MC74AC04
161
10, 15
MC74AC05
161
15
MC74AC08
161
MC33178
10, 13
MC74AC10
161
MC33179
10, 15
MC74AC11
161
MC33201
10, 11
MC74AC125
162
MC33202
10, 14
MC74AC132
162
MC33204
10, 16
MC74AC138
162
MC33269
79, 80, 86
MC74AC139
162
MC33172V MC33174 MC33174V
MC3479
107, 111
MC3488A
103, 104
MC33272A
10, 14
MC74AC14
161
MC33274A
10, 16
MC74AC157
162
MC74AC20
162
MC33275
79
MC33340
20, 115
MC74AC240
162
MC33341
20, 115
MC74AC244
162
MC33342
20, 115
MC74AC245
162
http://onsemi.com 332
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
MC74ACT541
163
MC74HC4046A
160
MC74LCX16245
157
MC74ACT564
163
MC74HC4051A
160
MC74LCX16373
157
MC74ACT573
163
MC74HC4052A
161
MC74LCX16374
157
MC74ACT574
163
MC74HC4053A
161
MC74LCX240
157
MC74ACT640
163
MC74HC4060A
161
MC74LCX244
157
MC74ACT646
163
MC74HC4066A
161
MC74LCX245
157
MC74ACT652
163
MC74HC4316A
161
MC74LCX257
157
MC74ACT74
162
MC74HC4538A
161
MC74LCX258
157
MC74ACT86
162
MC74HC4851A
161
MC74LCX32
156
MC74HC00A
159
MC74HC4852A
161
MC74LCX373
157
MC74HC02A
159
MC74HC540A
160
MC74LCX374
157
MC74HC03A
159
MC74HC541A
160
MC74LCX540
157
MC74HC04A
159
MC74HC573A
160
MC74LCX541
157
MC74HC08A
159
MC74HC574A
160
MC74LCX573
157
MC74HC125A
159
MC74HC589A
160
MC74LCX574
157
MC74HC126A
159
MC74HC595A
160
MC74LCX74
156
MC74HC132A
159
MC74HC74A
159
MC74LCX86
157
MC74HC138A
159
MC74HC86A
159
MC74LCXU04
156
MC74HC139A
159
MC74HCT04A
159
MC74LVX00
157
MC74HC14A
159
MC74HCT138A
159
MC74LVX02
157
MC74HC157A
159
MC74HCT14A
159
MC74LVX04
157
MC74HC161A
159
MC74HCT244A
160
MC74LVX08
157
MC74HC163A
159
MC74HCT245A
160
MC74LVX125
157
MC74HC164A
159
MC74HCT273A
160
MC74LVX138
157
MC74HC165A
159
MC74HCT373A
160
MC74LVX139
157
MC74HC174A
159
MC74HCT374A
160
MC74LVX14
157
MC74HC175A
159
MC74HCT541A
160
MC74LVX157
157
MC74HC1G00
152
MC74HCT573A
160
MC74LVX240
157
MC74HC1G02
152
MC74HCT574A
160
MC74LVX244
157
MC74HC1G04
152
MC74HCT74A
159
MC74LVX245
157
MC74HC1G08
152
MC74HCU04A
159
MC74LVX257
158
MC74HC1G14
152
MC74LCX00
156
MC74LVX259
158
MC74HC1G32
152
MC74LCX02
156
MC74LVX32
157
MC74HC1GU04
152
MC74LCX04
156
MC74LVX373
158
MC74HC240A
160
MC74LCX06
156
MC74LVX374
158
MC74HC244A
160
MC74LCX07
156
MC74LVX4051
158
MC74HC245A
160
MC74LCX08
156
MC74LVX4052
158
MC74HC273A
160
MC74LCX125
157
MC74LVX4053
158
MC74HC32A
159
MC74LCX138
157
MC74LVX4066
158
MC74HC373A
160
MC74LCX139
157
MC74LVX4245
158
MC74HC374A
160
MC74LCX14
156
MC74LVX50
157
MC74HC390A
160
MC74LCX157
157
MC74LVX541
158
MC74HC393A
160
MC74LCX158
157
MC74LVX573
158
MC74HC4020A
160
MC74LCX16240
157
MC74LVX574
158
MC74HC4040A
160
MC74LCX16244
157
MC74LVX74
157
http://onsemi.com 333
Alphabetical Parts Listing Device Number
Page
Page
Device Number
Page
MC74LVX8051
158
Device Number MC74VHC1GT126
152
MC74VHCT50A
155
MC74LVX8053
158
MC74VHC1GT14
152
MC74VHCT540A
156
MC74LVX86
157
MC74VHC1GT32
152
MC74VHCT541A
156
MC74LVXC3245
158
MC74VHC1GT50
152
MC74VHCT573A
156
MC74LVXT4051
158
MC74VHC1GT66
151, 152
MC74VHCT574A
156
MC74LVXT4052
158
MC74VHC1GT86
152
MC74VHCT74A
155
MC74LVXT4053
158
MC74VHC1GU04
152
MC74VHCT86A
155
MC74LVXT4066
158
MC74VHC240
155
MC74VHCU04
155
MC74LVXT8051
158
MC74VHC244
156
MC75172B
103, 104
MC74LVXT8053
158
MC74VHC245
156
MC75174B
103, 104
MC74LVXU04
157
MC74VHC257
156
MC7800 Series
78
MC74VHC00
155
MC74VHC259
156
MC78FC00 Series
83
MC74VHC02
155
MC74VHC32
155
MC78FCxx
79
MC74VHC04
155
MC74VHC373
156
MC78L00A Series
MC74VHC08
155
MC74VHC374
156
MC78LCxx
79, 81
MC74VHC125
155
MC74VHC4051
156
MC78LxxA
76
MC74VHC126
155
MC74VHC4052
156
MC78M00 Series
77
MC74VHC132
155
MC74VHC4053
156
MC78Mxx/A
76
MC74VHC138
155
MC74VHC4066
156
MC78PC
MC74VHC139
155
MC74VHC4316
156
MC78PC00 Series
MC74VHC14
155
MC74VHC50
155
MC78xx/A
76
MC74VHC157
155
MC74VHC540
156
MC7900 Series
78
MC74VHC1G00
152, 155
MC74VHC541
156
MC79L00 Series
77
MC74VHC1G01
152
MC74VHC573
156
MC79LxxA
76
MC74VHC1G02
152
MC74VHC574
156
MC79M00 Series
77
MC74VHC1G03
152
MC74VHC74
155
MC79Mxx
76
MC74VHC1G04
152
MC74VHC86
155
MC79xx/A
76
MC74VHC1G05
152
MC74VHCT00A
155
MCH12140
130
MC74VHC1G07
152
MC74VHCT02A
155
MCK12140
130
MC74VHC1G08
152
MC74VHCT04A
155
MCR08BT1
269
MC74VHC1G09
152
MC74VHCT08A
155
MCR08MT1
269
MC74VHC1G125
152
MC74VHCT125A
155
MCR100−3
269
MC74VHC1G126
152
MC74VHCT126A
155
MCR100−4
269
MC74VHC1G132
152
MC74VHCT132A
155
MCR100−6
269
MC74VHC1G135
152
MC74VHCT138A
155
MCR100−8
269
MC74VHC1G14
152
MC74VHCT139A
155
MCR106−6
269
MC74VHC1G32
152
MC74VHCT157A
155
MCR106−8
269
MC74VHC1G50
152
MC74VHCT240A
155
MCR12D
270
MC74VHC1G66
151, 152
MC74VHCT244A
156
MCR12DCMT4
270
MC74VHC1G86
152
MC74VHCT245A
156
MCR12DCNT4
270
MC74VHC1GT00
152
MC74VHCT257A
156
MCR12DSMT4
270
MC74VHC1GT02
152
MC74VHCT259A
156
MCR12DSN−001
270
MC74VHC1GT04
152
MC74VHCT32A
155
MCR12DSNT4
270
MC74VHC1GT08
152
MC74VHCT373A
156
MCR12LD
270
MC74VHC1GT125
152
MC74VHCT374A
156
MCR12LM
270
http://onsemi.com 334
77
115 79, 83
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
MCR12LN
270
MGSF3441VT1
289
MJD18002D2T4
MCR12M
270
MGSF3455VT1
289
MJD200T4
244
MCR12N
270
MJ11012
250
MJD210T4
244
MCR16N
271
MJ11015
250
MJD243T4
244
MCR218−2
270
MJ11016
250
MJD253T4
244
MCR218−4
270
MJ11021
250
MJD2955T4
244
MCR218−6
270
MJ11022
250
MJD3055T4
244
MCR22−6
269
MJ11028
250
MJD31CT4
244
MCR22−8
269
MJ11029
250
MJD31T4
244
MCR25D
271
MJ11030
250
MJD32CT4
244
MCR25M
271
MJ11032
250
MJD32T4
244
MCR25N
271
MJ11033
250
MJD340T4
244
MCR68−2
270
MJ14001
248
MJD350T4
244
MCR69−2
271
MJ14002
248
MJD41CT4
244
MCR69−3
271
MJ14003
248
MJD42CT4
244
MCR703AT4
269
MJ15001
247, 251
MJD44H11T4
244
MCR706AT4
269
MJ15002
247, 251
MJD45H11T4
244
MCR708AT4
269
MJ15003
248, 251
MJD47T4
244
MCR716T4
269
MJ15004
248, 251
MJD50T4
244
MCR718T4
269
MJ15011
247
MJD5731T4
244
MCR72−3
270
MJ15012
247
MJD6039T4
249
MCR72−6
270
MJ15015
247, 251
MJE13005
245
MCR72−8
270
MJ15016
247, 251
MJE13007
246
MCR8DCMT4
270
MJ15020
247, 251
MJE13009
246
MCR8DCNT4
270
MJ15021
247, 251
MJE15028
246
MCR8DSMT4
270
MJ15022
248
MJE15029
246
MCR8DSNT4
270
MJ15023
248
MJE15030
246, 251
MCR8N
270
MJ15024
248, 251
MJE15031
246, 251
MCR8SD
270
MJ15025
248, 251
MJE15032
246, 251
MCR8SM
270
MJ21193
248, 251
MJE15033
246, 251
MCR8SN
270
MJ21194
248, 251
MJE15034
245, 251
MDC3105
99, 107
MJ21195
248
MJE15035
245, 251
MDC3105DM
310
MJ21196
248
MJE170
244
MDC3105L
310
MJ2955
247
MJE171
244
MGB15N35CL
287
MJ4502
248
MJE172
244
MGB15N40CL
287
MJ802
248
MJE180
MGP15N35CL
287
MJB41CT4
244
MJE18002
245, 252
MGP15N40CL
287
MJB42CT4
244
MJE18004
245, 252
MGSF1N02L
281
MJB44H11T4
244
MJE18004D2
245, 252
MGSF1N03L
281
MJB45H11T4
244
MJE18006
246, 252
MGSF1P02ELT1
289
MJD112T4
249
MJE18008
246, 252
MGSF1P02ELT3
289
MJD117T4
249
MJE181
244
MGSF1P02LT1
289
MJD122T4
249
MJE182
244
MGSF1P02LT3
289
MJD127T4
249
MJE200
245
MGSF3433VT1
289
MJD148T4
244
MJE210
245
http://onsemi.com 335
Page 244, 252
244
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
MJE243
245
MJH11019
250
MM3Z18V
202
MJE253
245
MJH11020
250
MM3Z18VS
202
MJE270
249
MJH11021
250
MM3Z20V
202
MJE271
249
MJH11022
250
MM3Z22V
202
MJE2955T
246
MJH6284
250
MM3Z24V
202
MJE3055T
246
MJH6287
250
MM3Z27V
202
MJE340
244
MJL0281A
247, 251
MM3Z2V4
202
MJE3439
244
MJL0302A
247, 251
MM3Z2V7
202
MJE344
244
MJL1302A
247, 251
MM3Z30V
202
MJE350
244
MJL21193
247, 251
MM3Z33V
202
MJE371
245
MJL21194
247, 251
MM3Z36V
203
MJE4343
247
MJL21195
247, 251
MM3Z39V
203
MJE4353
247
MJL21196
247, 251
MM3Z3V0
202
MJE521
245
MJL3281A
247, 251
MM3Z3V3
202
MJE5730
245
MJL4281A
247, 251
MM3Z3V3S
202
MJE5731
245
MJL4302A
247, 251
MM3Z3V6
202
MJE5731A
245
MJW0281A
247, 251
MM3Z3V9
202
MJE5740
249
MJW0302A
247, 251
MM3Z3V9S
202
MJE5742
249
MJW1302A
247, 251
MM3Z43V
203
MJE5850
246
MJW18020
247
MM3Z4V3
202
MJE5851
246
MJW21191
247, 251
MM3Z4V3S
202
MJE5852
246
MJW21192
247, 251
MM3Z4V7
202
MJE700
249
MJW21193
247, 251
MM3Z4V7S
202
MJE702
249
MJW21194
247, 251
MM3Z5V1
202
MJE703
249
MJW21195
247, 251
MM3Z5V1S
202
MJE800
249
MJW21196
247, 251
MM3Z5V6
202
MJE802
249
MJW3281A
247, 251
MM3Z5V6S
202
MJE803
249
MKP1V120RL
275
MM3Z6V2
202
MJF122
250
MKP1V130RL
275
MM3Z6V2S
202
MJF127
250
MKP1V160RL
275
MM3Z6V8
202
MJF15030
247
MKP3V120
275
MM3Z6V8S
202
MJF15031
247
MKP3V240
275
MM3Z7V5
202
MJF18004
247, 252
MKP3V240RL
275
MM3Z7V5S
202
MJF18008
247, 252
MLD1N06CL
288
MM3Z8V2
202
MJF2955
247
MLD2N06CL
288
MM3Z8V2S
202
MJF3055
247
MM3Z10V
202
MM3Z9V1
202
MJF31C
247
MM3Z10VS
202
MM3Z9V1S
202
MJF32C
247
MM3Z11V
202
MM5Z10V
202
MJF44H11
247
MM3Z11VS
202
MM5Z12V
202
MJF45H11
247
MM3Z12V
202
MM5Z13V
202
MJF47
247
MM3Z12VS
202
MM5Z15V
202
MJF6388
250
MM3Z13V
202
MM5Z16V
202
MJF6668
250
MM3Z15V
202
MM5Z18VS
202
MJH11017
250
MM3Z16V
202
MM5Z27V
202
MJH11018
250
MM3Z16VS
202
MM5Z2V4
202
http://onsemi.com 336
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
MM5Z2V4S
202
MMBF0201NL
281
MMBT4403LT1
MM5Z2V7
202
MMBF0202PLT1
289
175, 181, 183
MM5Z30V
202
MMBF170L
281
MMBT4403WT1
176, 184
MM5Z33V
202
MMBF2201N
280
MM5Z3V0
202
MMBF2202P
280
MM5Z3V3
202
MMBF4391LT1
192
MM5Z3V6
202
MMBF4392LT1
192
MM5Z3V9
202
MMBF4393LT1
192
MM5Z4V3
202
MMBF4416LT1
191
MM5Z4V3S
202
MMBF5457LT1
191
MM5Z4V7
202
MMBF5460LT1
191
MM5Z4V7S
202
MMBF5484LT1
191
MM5Z5V1
202
MMBFJ175LT1
192
MM5Z5V1S
202
MMBFJ177LT1
192
MM5Z5V6
202
MMBFJ309LT1
191
MM5Z5V6S
202
MMBFJ310LT1
191
MM5Z6V2
202
MMBFU310LT1
191
MM5Z6V2S
202
MMBT2131T1
190
MM5Z6V8
202
MMBT2132T3
MM5Z6V8S
202
MMBT2222ALT1
MM5Z7V5
202
175, 181, 183
MM5Z7V5S
202
MMBT2222ATT1
177, 181, 184
MM5Z8V2
202
MMBT2222AWT1
MM5Z8V2S
202
176, 181, 184
MM5Z9V1S
202
MMBT2222LT1
176, 181
MMBD101LT1
194
MMBT2369ALT1
183
MMBD2835LT1
197
MMBT2369LT1
183
MMBD2836LT1
197
MMBT2484LT1
175, 179
MMBD2837LT1
197
MMBT2907ALT1
MMBD2838LT1
197
175, 181, 183
MMBD301LT1
194
MMBD330T1
194
MMBD352LT1
194
MMBD352WT1
194
MMBD353LT1
194
MMBD354LT1
194
MMBD355LT1
194
MMBD452LT1
194
MMBD6050LT1
197
MMBD6100LT1
197
MMBD7000LT1
197
MMBD701LT1
194
MMBD717LT1
194
MMBD770T1
194
MMBD914LT1
197
190
MMBT2907AM3T5G MMBT2907AWT1
177 176, 181, 184
MMBT489LT1
Page
190
MMBT5087LT1
175, 179
MMBT5088LT1
176, 179
MMBT5089LT1
176, 179
MMBT5401LT1
182
MMBT5550LT1
175, 181, 182
MMBT5551LT1
182
MMBT589LT1
190
MMBT6427LT1
179
MMBT6428LT1
175, 179
MMBT6429LT1
175, 179
MMBT6517LT1
182
MMBT6520LT1
182
MMBT6589T1 MMBT8099LT1
190 175, 181
MMBT918LT1
183
MMBTA05LT1
175, 181
MMBTA06LT1
175, 181
MMBTA06WT1
176
MMBTA13LT1
179
MMBTA14LT1
179
MMBTA20LT1
175
MMBTA42LT1
182
MMBTA43LT1
182
MMBTA55LT1
175, 181
MMBTA56LT1
175, 181
MMBTA56WT1
176
MMBTA63LT1
179
MMBTA64LT1
179
MMBT3416LT3
175
MMBTA70LT1
175
MMBT3904LT1
175, 183
MMBTA92LT1
182
MMBT3904TT1
177, 184
MMBTH10−4LT1
183
MMBT3904WT1
176, 184
MMBTH10LT1
183
MMBT3906LT1
175, 183
MMBV105GLT1
193
MMBT3906TT1
177, 184
MMBV109LT1
193
MMBT3906WT1
176, 184
MMBV2101LT1
193
MMBT4124LT1
176
MMBV2105LT1
193
MMBT4126LT1
176
MMBV2107LT1
193
MMBT4401LT1
175, 181, 183
MMBV2108LT1
193
MMBV2109LT1
193
MMBT4401WT1
176, 184
http://onsemi.com 337
Alphabetical Parts Listing Device Number
Page
MMBV3102LT1
193
Device Number MMBZ5242EL
Page 204
MMDF3N03HDR2
289
MMBV3401LT1
196
MMBZ5243BL
204
MMDF4207R2
289
MMBV3700LT1
196
MMBZ5243EL
204
MMDF4N01HDR2
289
MMBV409LT1
193
MMBZ5244BL
204
MMDF4P03HDR2
289
MMBV432LT1
193
MMBZ5244EL
204
MMDF6N02HDR2
289
MMBV609LT1
193
MMBZ5245BL
204
MMDF6N03HDR2
289
MMBV809LT1
193
MMBZ5245EL
204
MMDFS2P102R2
289
MMBZ12VAL
211
MMBZ5246BL
204
MMDFS3P303R2
289
MMBZ15VAL
211
MMBZ5246EL
204
MMDFS6N303R2
289
MMBZ15VDL
210
MMBZ5247BL
204
MMDL101T1
194
MMBZ15VDLT1
210
MMBZ5248BL
204
MMDL301T1
194
MMBZ18VAL
211
MMBZ5248EL
204
MMDL6050T1
198
MMBZ20VAL
211
MMBZ5249BL
204
MMDL770T1
194
MMBZ27VAL
211
MMBZ5250BL
204
MMDL914T1
198
MMBZ27VCL
210
MMBZ5251BL
204
MMFT2955ET1
289
MMBZ33VAL
211
MMBZ5252BL
204
MMFT3055ELT1
289
MMBZ5221BL
204
MMBZ5252EL
204
MMFT3055ET1
289
MMBZ5222BL
204
MMBZ5253BL
204
MMFT3055VLT1
289
MMBZ5223BL
204
MMBZ5254BL
204
MMFT3055VLT3
289
MMBZ5225BL
204
MMBZ5254EL
204
MMFT3055VLT3−LF
289
MMBZ5226BL
204
MMBZ5255BL
204
MMFT3055VT1
289
MMBZ5227BL
204
MMBZ5256BL
204
MMFT3055VT3
289
MMBZ5228BL
204
MMBZ5257BL
204
MMFT5P03HDT1
289
MMBZ5228EL
204
MMBZ5258BL
205
MMFT5P03HDT3
289
MMBZ5229BL
204
MMBZ5259BL
205
MMJT350T1
244
MMBZ5229EL
204
MMBZ5261BL
205
MMJT9410T1
244
MMBZ5230BL
204
MMBZ5262BL
205
MMJT9435T1
244
MMBZ5230EL
204
MMBZ5263BL
205
MMPQ2222A
178
MMBZ5231BL
204
MMBZ5264BL
205
MMPQ2369
178, 184
MMBZ5231EL
204
MMBZ5265BL
205
MMPQ3467
178
MMBZ5232BL
204
MMBZ5268BL
205
MMPQ3904
178, 184
MMBZ5232EL
204
MMBZ5270BL
205
MMPQ3906
178, 184
MMBZ5233BL
204
MMBZ5V6AL
210
MMPQ6700
178, 184
MMBZ5234BL
204
MMBZ5V6ALT1
210, 211
MMQA12V
235, 298
MMBZ5234EL
204
MMBZ6V2AL
210
MMQA13V
235, 298
MMBZ5235BL
204
MMBZ6V8AL
210
MMQA15V
235, 298
MMBZ5236BL
204
MMBZ9V1AL
210
MMQA18V
235, 298
MMBZ5237BL
204
MMDF2C01HDR2
289
MMQA20V
235, 298
MMBZ5237EL
204
MMDF2C02ER2
289
MMQA21V
235, 298
MMBZ5238BL
204
MMDF2C02HDR2
289
MMQA22V
235, 298
MMBZ5239BL
204
MMDF2C03HD
283
MMQA24V
235, 298
MMBZ5240BL
204
MMDF2P01HDR2
289
MMQA27V
235, 298
MMBZ5240EL
204
MMDF2P02E
283
MMQA30V
235, 298
MMBZ5241BL
204
MMDF2P03HDR2
289
MMQA33V
235, 298
MMBZ5242BL
204
MMDF3N02HD
283
MMQA5V6
235, 298
http://onsemi.com 338
Device Number
Page
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
MMQA6V2
235, 298
MMSZ4682
206
MMSZ4V7E
206
MMQA6V8
235, 298
MMSZ4683
206
MMSZ5221B
206
MMSD103T1
197
MMSZ4684
206
MMSZ5221E
206
MMSD301T1
194
MMSZ4684E
206
MMSZ5222B
206
MMSD4148T1
197
MMSZ4685
206
MMSZ5223B
206
MMSD701T1
194
MMSZ4686
206
MMSZ5223E
206
MMSD71RKT1
197
MMSZ4687
206
MMSZ5224B
206
MMSD914T1
197
MMSZ4688
206
MMSZ5225B
206
MMSF3P02HD
283
MMSZ4688E
206
MMSZ5226B
206
MMSF3P03HDR2
289
MMSZ4689
206
MMSZ5226E
206
MMSF4205R2
289
MMSZ4689E
206
MMSZ5227B
206
MMSF4N01HDR2
289
MMSZ4690
206
MMSZ5228B
206
MMSF5N02HDR2
289
MMSZ4690E
206
MMSZ5229B
206
MMSF5N03HDR2
289
MMSZ4691
206
MMSZ5230B
206
MMSF5P02HDR2
289
MMSZ4692
206
MMSZ5231B
206
MMSF7N03HDR2
289
MMSZ4693
206
MMSZ5232B
206
MMSZ10
206
MMSZ4694
206
MMSZ5233B
206
MMSZ11
206
MMSZ4695
206
MMSZ5234B
206
MMSZ12
206
MMSZ4696
206
MMSZ5235B
206
MMSZ13
206
MMSZ4697
206
MMSZ5235E
206
MMSZ15
206
MMSZ4697E
206
MMSZ5236B
206
MMSZ15E
206
MMSZ4698
206
MMSZ5236E
206
MMSZ16
206
MMSZ4699
206
MMSZ5237B
206
MMSZ18
206
MMSZ4699E
206
MMSZ5237E
206
MMSZ18E
206
MMSZ4700
206
MMSZ5238B
206
MMSZ20
206
MMSZ4701
206
MMSZ5239B
206
MMSZ22
206
MMSZ4702
206
MMSZ5240B
206
MMSZ24
206
MMSZ4702E
206
MMSZ5240E
206
MMSZ27
206
MMSZ4703
206
MMSZ5241B
206
MMSZ2V4
206
MMSZ4704
206
MMSZ5242B
206
MMSZ2V7
206
MMSZ4705
206
MMSZ5242E
206
MMSZ2V7E
206
MMSZ4705E
206
MMSZ5243B
206
MMSZ30
206
MMSZ4706
206
MMSZ5244B
206
MMSZ33
206
MMSZ4707
206
MMSZ5244E
206
MMSZ36
207
MMSZ4708
206
MMSZ5245B
206
MMSZ39
207
MMSZ4709
206
MMSZ5245E
206
MMSZ3V0
206
MMSZ4710
206
MMSZ5246B
206
MMSZ3V3
206
MMSZ4711
206
MMSZ5246E
206
MMSZ3V6
206
MMSZ4712
206
MMSZ5247B
206
MMSZ3V9
206
MMSZ4713
206
MMSZ5248B
206
MMSZ43
207
MMSZ4714
206
MMSZ5248E
206
MMSZ4678
206
MMSZ4715
207
MMSZ5250B
206
MMSZ4679
206
MMSZ4717
207
MMSZ5250E
206
MMSZ4680
206
MMSZ4V3
206
MMSZ5251B
206
MMSZ4681
206
MMSZ4V7
206
MMSZ5252B
206
http://onsemi.com 339
Alphabetical Parts Listing Device Number
Page
Device Number
Page
MMSZ5252E
206
MMUN2113LT1
185
MPS4126
174
MMSZ5253B
206
MMUN2114LT1
185
MPS5172
174
MMSZ5254B
206
MMUN2115LT1
185
MPS5179
183
MMSZ5255B
206
MMUN2116LT1
185
MPS651
173, 180
MMSZ5256B
206
MMUN2130LT1
185
MPS6521
174, 179
MMSZ5256E
206
MMUN2131LT1
185
MPS6523
174, 179
MMSZ5257B
206
MMUN2132LT1
185
MPS6602
173, 180
MMSZ5257E
206
MMUN2133LT1
185
MPS6652
173, 180
MMSZ5258B
207
MMUN2134LT1
185
MPS6717
174, 180
MMSZ5259B
207
MMUN2211LT1
185
MPS6724
179
MMSZ5259E
207
MMUN2212LT1
185
MPS6725
179
MMSZ5260B
207
MMUN2213LT1
185
MPS6726
174, 180
MMSZ5260E
207
MMUN2214LT1
185
MPS6727
174, 180
MMSZ5261B
207
MMUN2215LT1
185
MPS6729
MMSZ5262B
207
MMUN2216LT1
185
173, 174, 180
MMSZ5263B
207
MMUN2230LT1
185
MPS751
173, 180
MPS8099
173, 180
MPS8599
173, 180
MMSZ5263E
207
MMUN2231LT1
185
MMSZ5264B
207
MMUN2232LT1
185
MMSZ5265B
207
MMUN2233LT1
185
MMSZ5266B
207
MMUN2234LT1
185
MMSZ5267B
207
MMUN2238LT1
185
MMSZ5268B
207
MMUN2241LT1
185
MMSZ5270B
207
MMVL109T1
193
MMSZ5272B
207
MMVL2101T1
193
MMSZ5V1
206
MMVL2105T1
193
MMSZ5V6
206
MMVL3102T1
193
MMSZ6V2
206
MMVL3401T1
196
MMSZ6V8
206
MMVL409T1
193
MMSZ7V5
206
MMVL809T1
193
MMSZ8V2
206
MPF102
191
MMSZ8V2E
206
MPF4392
192
MMSZ9V1
206
MPF4393
192
MMT05B230T3
275
MPN3404
196
MMT05B260T3
275
MPN3700
196
MMT05B310T3
275
MPS2222
174, 180
MMT05B350T3
275
MPS2222A
173, 180, 183
MMT08B260T3
275
MMT08B310T3
275
MMT08B350T3
275
MMT10B230T3
275
MMT10B260T3
275
MMT10B310T3
275
MMT10B350T3
275
MMUN2111LT1
185
MMUN2112LT1
185
Device Number
Page
MPS918
183
MPSA05
173, 180
MPSA06
173, 180
MPSA13
179
MPSA14
179
MPSA18
173, 179
MPSA20
173
MPSA27
179
MPSA29
179
MPSA42
182
MPSA55
173, 180
MPSA56
173, 180
MPSA63
179
MPSA64
179
MPSA75
179
MPSA77
179
MPSA92
182
MPSH10
183
MPSH17
183
MPS2369
183
MPSW01
174, 180
MPS2369A
183
MPSW01A
174, 180
MPS2907A
173, 180, 183
MPSW05
174, 180
MPSW06
174, 180
MPSW13
179
MPSW42
182
MPSW45
179
MPS3563
183
MPS3638A
183
MPS3646
183
MPS4124
174
http://onsemi.com 340
Alphabetical Parts Listing Device Number MPSW45A
Page
Device Number
Page
Device Number
Page
179
MSD1328−ST1
176
MTD14N10ET4
290
MPSW51
174, 180
MSD1819A−RT1
176
MTD15N06V
290
MPSW51A
174, 180
MSD2714AT1
183
MTD15N06V1
290
MPSW55
174, 180
MSD42WT1
182
MTD15N06VL
290
MPSW56
174, 180
MSD601−RT1
176
MTD15N06VL1
290
MPSW63
179
MSD601−ST1
176
MTD15N06VLT4
290
MPSW92
182
MSD602−RT1
176
MTD15N06VT4
290
MPTE−12
215
MSD6100
196
MTD20N03HDL
290
MPTE−15
215
MSQA6V1W5
235, 298
MTD20N03HDL1
290
MPTE−18
215
MSR1560
256
MTD20N03HDLG
290
MPTE−5
215
MSR860
256, 261
MTD20N03HDLT4
290
MPX4729A
200
MSRD620CT
256, 261
MTD20N03HDLT4G
290
MR2502
266
MTB1306
289
MTD20N06HD
290
MR2504
266
MTB1306T4
290
MTD20N06HD1
291
MR2510
266
MTB15N06V
290
MTD20N06HDL
291
MR2520L
267
MTB20N20E
290
MTD20N06HDLT4
291
MR2535L
256, 267
MTB20N20ET4
290
MTD20N06HDT4
291
MR750
266
MTB23P06V
290
MTD20N06V
291
MR751
266
MTB23P06VT4
290
MTD20N06V1
291
MR752
266
MTB29N15ET4
290
MTD20N06VT4
291
MR754
266
MTB30N06VL
290
MTD20P03HDL
291
MR756
266
MTB30N06VLT4
290
MTD20P03HDL1
291
MR760
266
MTB33N10E
290
MTD20P03HDLT4
291
MR852
266
MTB33N10ET4
290
MTD20P06HDL
291
MR854
266
MTB36N06V
290
MTD20P06HDLG
291
MR856
266
MTB36N06VT4
290
MTD20P06HDLT4
291
MRA4003T3
266
MTB40N10E
290
MTD20P06HDLT4G
291
MRA4004T3
266
MTB40N10ET4
290
MTD2955ET4
291
MRA4005T3
266
MTB50N06V
290
MTD2955V
291
MRA4006T3
266
MTB50N06VL
290
MTD2955V1
291
MRA4007T3
266
MTB50N06VLT4
290
MTD2955VT4
291
MRS1504T3
266
MTB50N06VT4
290
MTD3055ELT4
291
MSA1162GT1
176
MTB52N06V
290
MTD3055V
291
MSA1162YT1
176
MTB52N06VL
290
MTD3055V1
291
MSB1218A−RT1
176
MTB52N06VLT4
290
MTD3055VL
291
MSB709−RT1
176
MTB52N06VT4
290
MTD3055VL1
291
MSB710−RT1
176
MTB60N06HD
290
MTD3055VLT4
291
MSB92AWT1
182
MTB60N06HDT4
290
MTD3055VT4
291
MSB92WT1
182
MTB75N03HDL
290
MTD3302
291
MSC2295−BT1
183
MTB75N03HDLT4
290
MTD3302T4
291
MSC2295−CT1
183
MTB75N05HD
290
MTD9N10E
291
MSC2712GT1
176
MTB75N05HDT4
290
MTD9N10E1
291
MSC2712YT1
176
MTB75N06HD
290
MTD9N10ET4
291
MSC3930−BT1
176
MTB75N06HDT4
290
MTDF1P02HDR2
291
MSD1328−RT1
176
MTD1302−001
290
MTP10N10E
291
http://onsemi.com 341
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
MTP1306
291
MUN2234T1
185
MUN5230DW1T1
187
MTP15N06V
291
MUN2236T1
185
MUN5230T1
185
MTP15N06VL
291
MUN2237T1
185
MUN5231DW1T1
187
MTP20N06V
291
MUN2240T1
185
MUN5231T1
185
MTP20N20E
291
MUN2241T1
185
MUN5232DW1T1
187
MTP3055V
291
MUN5111DW1T1
187
MUN5232T1
185
MTP3055VL
291
MUN5111T1
185
MUN5233DW1T1
187
MTP36N06V
291
MUN5112DW1T1
187
MUN5233T1
185
MTP50N06V
291
MUN5112T1
185
MUN5234DW1T1
187
MTP50N06VL
291
MUN5113DW1T1
187
MUN5234T1
185
MTP52N06V
291
MUN5113T1
185
MUN5235DW1T1
187
MTP52N06VL
291
MUN5114DW1T1
187
MUN5235T1
185
MTP60N06HD
292
MUN5114T1
185
MUN5236DW1T1
187
MTP75N03HDL
292
MUN5115DW1T1
187
MUN5236T1
185
MTP75N05HD
292
MUN5115T1
185
MUN5237DW1T1
187
MTP75N06HD
292
MUN5116DW1T1
187
MUN5237T1
185
MTSF2P02HDR2
292
MUN5116T1
185
MUN5311DW1T1
188
MTSF2P03HDR2
292
MUN5130DW1T1
187
MUN5312DW1T1
188
MTW35N15E
292
MUN5130T1
185
MUN5313DW1T1
188
MTW45N10E
292
MUN5131DW1T1
187
MUN5314DW1T1
188
MTY100N10E
292
MUN5131T1
185
MUN5315DW1T1
188
MUN2111T1
185
MUN5132DW1T1
187
MUN5316DW1T1
188
MUN2112T1
185
MUN5132T1
185
MUN5330DW1T1
188
MUN2113T1
185
MUN5133DW1T1
187
MUN5331DW1T1
188
MUN2114T1
185
MUN5133T1
185
MUN5332DW1T1
188
MUN2115T1
185
MUN5134DW1T1
187
MUN5333DW1T1
188
MUN2116T1
185
MUN5134T1
185
MUN5334DW1T1
188
MUN2130T1
185
MUN5135DW1T1
187
MUN5335DW1T1
188
MUN2131T1
185
MUN5135T1
185
MUR105
263
MUN2132T1
185
MUN5136DW1T1
187
MUR110
263
MUN2133T1
185
MUN5136T1
185
MUR1100E
MUN2134T1
185
MUN5137DW1T1
187
MUR115
263
MUN2136T1
185
MUN5137T1
185
MUR120
263
MUN2137T1
185
MUN5211DW1T1
187
MUR130
263
MUN2140T1
185
MUN5211T1
185
MUR140
263
MUN2211T1
185
MUN5212DW1T1
187
MUR1510
264
MUN2212T1
185
MUN5212T1
185
MUR1515
264
MUN2213T1
185
MUN5213DW1T1
187
MUR1520
264
MUN2214T1
185
MUN5213T1
185
MUR1540
264
MUN2215T1
185
MUN5214DW1T1
187
MUR1560
264
MUN2216T1
185
MUN5214T1
185
MUR160
263
MUN2230T1
185
MUN5215DW1T1
187
MUR1610CT
264
MUN2231T1
185
MUN5215T1
185
MUR1615CT
264
MUN2232T1
185
MUN5216DW1T1
187
MUR1620CT
264
MUN2233T1
185
MUN5216T1
185
MUR1620CTR
264
http://onsemi.com 342
256, 263
Alphabetical Parts Listing Device Number
Page
Device Number
Page
MUR1640CT
264
MURF1660CT
264
MUR1660CT
264
MURH840CT
256, 263
MUR180E
Device Number
Page
NB2304AI1D
128
256, 264
NB2304AI1HD
128
MURH860CT
256, 264
NB2304AI2D
128
MUR2020R
264
MURHB840CT
256, 262
NB2305AC1D
128
MUR2100E
263
MURHB860CT
256, 262
NB2305AC1DT
128
MUR220
263
MURHF860CT
256, 264
NB2305AC1HD
128
MUR240
263
MURP20020CT
265
NB2305AC1HDT
128
MUR260
263
MURP20040CT
265
NB2305AI1D
128
MUR3020PT
265
MURS105T3
262
NB2305AI1DT
128
MUR3020WT
265
MURS110T3
262
NB2305AI1HD
128
MUR3040PT
265
MURS115T3
262
NB2305AI1HDT
128
MUR3060PT
265
MURS120T3
262
NB2308AC1D
128
MUR3060WT
265
MURS140T3
262
NB2308AC1DT
128
MUR405
263
MURS160T3
262
NB2308AC1HD
128
MUR410
263
MURS205T3
262
NB2308AC1HDT
128
MUR4100E
256, 263
MURS210T3
262
NB2308AC2D
128
MUR415
263
MURS220T3
262
NB2308AC2DT
128
MUR420
263
MURS230T3
262
NB2308AC3D
128
MUR440
263
MURS240T3
262
NB2308AC3DT
129
MUR450PF
256, 263
MURS260T3
262
NB2308AC4D
129
MUR450RL
256
MURS320T3
262
NB2308AC4DT
129
MUR460
263
MURS340T3
262
NB2308AC5HD
129
MUR480E
256, 263
MURS360T3
262
NB2308AC5HDT
129
MUR550APF
256, 263
MV104
193
NB2308AI1D
128
MUR550ARL
256
MV209
193
NB2308AI1DT
128
MUR550PF
256, 264
MV2101
193
NB2308AI1HD
128
MUR620CT
264
MV2105
193
NB2308AI1HDT
128
MUR805
264
MV2109
193
NB2308AI2D
128
MUR810
264
MZP4734A
200
NB2308AI2DT
128
256, 264
MZP4735A
200
NB2308AI3D
129
MUR815
264
MZP4738A
200
NB2308AI3DT
129
MUR820
264
MZP4740A
200
NB2308AI4D
129
MUR840
264
MZP4750A
201
NB2308AI4DT
129
264
MZP4751A
201
NB2308AI5HD
129
NB100ELT23L
122
NB2308AI5HDT
129
MUR8100E
MUR860 MUR880E
256, 264
MURB1620CT
262
NB100EP223
124
NB2309AC1D
129
MURB1660CT
262
NB100LVEP17
142
NB2309AC1DT
129
MURD320
262
NB100LVEP221
124
NB2309AC1HD
129
MURD330
262
NB100LVEP222
126
NB2309AC1HDT
129
MURD330T4
262
NB100LVEP224
124
NB2309AI1D
129
MURD340T4
262
NB100LVEP56
136
NB2309AI1DT
129
MURD550PF
262
NB100LVEP91
122
NB2309AI1HD
129
MURD550PFT4
256
NB2304AC1D
128
NB2309AI1HDT
129
MURD620CT
262
NB2304AC1HD
128
NB2579A
130
MURF1620CT
264
NB2304AC2D
128
NB2669A
130
http://onsemi.com 343
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
NB2760A
130
NCP1086
79, 80, 87
NCP346SN2
96
NB2762A
130
NCP1117
NCP3712A
96
NB2769A
130
79, 80, 86, 114
NB2779A
130
NB2780A
130
NB2869A
130
NB2870A
130
NB2872A
130
NB2879A
130
NB2969A
130
NB4L16M
142
NB4N507A
127
NB4N527S
142
NB6L11
124
NB6L16
142
NB6L239
126
NB6N239S
126
NB7L111M
124
NB7L11M
124
NB7L14M
124
NB7L216
142
NB7L86M NB7N017M
136, 138 126
NBC12429
127
NBC12429A
127
NBC12430
127
NBC12430A
127
NBC12439
127
NBC12439A
127
NBSG11
124
NBSG111
124
NBSG14
124
NBSG16
142
NBSG16M
142
NBSG16VS
142
NBSG53A
126
NBSG86A
136, 138
NCN4555
117
NCN6000
117
NCN6001
117
NCN6004A
117
NCN6010 NCP100
117 74, 75
NCP1030
114
NCP1031
114
NCP112
NCP400
96, 98
NCP1400
79, 83, 96, 115
115
NCP4115
115
NCP1402
115
NCP4523
80, 87, 115
NCP1403
115, 116
NCP4672
80, 88, 115
NCP1406
115, 116
NCP4894
115, 116
NCP1410
115
NCP4896
115, 116
NCP1411
115
NCP500
NCP1421
115
NCP5005
115
NCP1422
115
NCP5006
115, 116
NCP1450
115
NCP5007
115, 116
NCP1500
115
NCP5008
115, 116
NCP1501
115
NCP5010
115
NCP1508
115
NCP502
NCP1509
115
NCP5030
NCP1510A
115
NCP511
79, 83, 115
NCP1530
115
NCP512
79, 81, 115
NCP1550
115
NCP5201
114
NCP1561
114
NCP5203
114
NCP1562
114
NCP5208
114
NCP1729
115
NCP5210
114
NCP1800
20, 115
NCP5318
114
NCP1835
20, 115
NCP5322A
20, 115
NCP5331
NCP1835B
79, 83
79, 81, 115 115
73, 114 114
NCP2809
115, 116
NCP5332A
73, 114
NCP2820
115, 116
NCP5351
114
NCP2821
115
NCP5355
114
NCP2860
79, 80, 85
NCP5381
114
NCP2890
115, 116
NCP5426
79, 83, 99
NCP300
96, 97
NCP5500
79, 87
NCP301
97
NCP5504
80, 88, 115
NCP301
96
NCP551
79, 83, 115
NCP302
96, 98
NCP552
115
NCP303
96, 98
NCP553
79, 81, 115
NCP304
96, 98
NCP5603
116
NCP305
96, 98
NCP5604
115
NCP305
96
NCP5608
115
NCP3335
79, 86, 114
NCP561
79, 83, 115
NCP3418A
114
NCP562
79, 81, 115
NCP345
20, 96, 98, 115
NCP563
79, 81, 115
NCP565
NCP346
20, 98, 115
79, 80, 87, 114
NCP5661
79, 80, 86
NCP346SN1
96
http://onsemi.com 344
Alphabetical Parts Listing Device Number
Page
NCP5662
79, 80, 114
NCP5663
79, 80, 87, 114
Device Number
Page
NCV4276
79, 85, 90, 93, 113
NCV4279
79, 84, 90, 92, 113
NCV4299
79, 84, 90, 93
NCP580
79, 83, 115
NCP582
79, 84, 115
NCP583
79, 84, 115
NCP584
79, 84, 115
NCP585
79, 85, 115
NCP612
79, 82, 115
NCP623
79, 83
NCP631
79, 88
NCP662
79, 82, 115
NCP663
79, 83, 115
NCP803
96, 98
NCS2001
10, 12
NCS2002
10, 12
NCS2200
17, 18
NCS2201
17, 18
NCS2202
17, 18
NCS2203
17, 18
NCS5000
115
NCS7101
10, 12
NCV78LxxA
NCV1009
74, 75
NCV78LxxA Series
NCV1117
79, 80, 86, 90, 95, 113
NCV4949
79, 82, 90, 91, 113
NCV5500
79, 87, 90, 93, 113
NCV5504
80, 88, 90, 94, 113
NCV551
79, 83, 90, 92, 113
NCV553
79, 81, 90, 91, 113
NCV7356
109
NCV7361A
108, 109
NCV7380
109
NCV7382
108, 109
NCV7601
101, 102, 108, 110
NCV7702
101, 102, 108, 109 76, 91
NCV78xx
77 76, 78, 90, 95, 113
NCV2002
12
NCV8141
NCV2931
82, 90, 91, 113
79, 86, 90, 93, 113
NCV8184
79, 81, 90, 91, 113
NCV8501
79, 80, 84, 90, 92, 113
NCV2931/A NCV2931C NCV2951
79 80 79, 80, 83, 90, 91, 113
NCV300
96
NCV301
96
NCV303
96
NCV317
76, 78, 90, 95, 113
NCV33064
79, 80, 84, 90, 92, 113
NCV8503
79, 80, 85, 90, 92, 113
NCV8504
79, 80, 85, 90, 92, 113
NCV8505
79, 80, 85, 90, 93, 113
NCV8506
79, 80, 85, 90, 93, 113
NCV8508
79, 84, 90, 92, 113
96
NCV33161
96
NCV33164
96
NCV33269
79, 80, 86, 90, 93, 113
NCV33274A
NCV8502
NCV8509
80, 87, 90, 94, 113
16
NCV33275
79, 85, 90, 92, 113
NCV4275
79, 86, 90, 93, 113
Device Number
Page
NE5517
10
NE5532
14
NE5532(A)
10
NE5532A
14
NE5534
12
NE5534(A)
10
NE5534A
12
NE570
10
NE592
10, 14
NGB15N41CL
287
NGB18N40CLB
287
NGB8202N
287
NGB8204N
287
NGB8206N
287
NGD15N41CL
287
NGD18N40CLB
287
NGD8201N
287
NGD8205N
287
NGP15N41CL
287
NID5001N
288
NID5003N
288
NID6002N
288
NID9N05CL
288
NIF5002N
288
NIF5003N
288
NIF62514
288
NIF9N05CL
288
NILMS4501N
288
NIMD6302R
288
NIS5101E1T1
314
NIS5101E1T1G
314
NIS5101E2T1
314
NIS5101E2T1G
314
NIS5102QP1H
315
NIS5102QP2H
315
NIS5111D1R2
314
NIS5111D2R2
314
NIS5112D1R2SG
315
NIS5112D2R2SG
315
NIS5131E1T1
314
NIS5131E1T1G
314
NE521
17
NIS5131E2T1
314
NE522
17
NIS5131E2T1G
314
NIS6111QP
316
NE5230
10, 12
http://onsemi.com 345
Alphabetical Parts Listing Device Number NJD2873T4
Page 244
Device Number
Page
Device Number
Page
NL7SZ19
166
NSBA143TDXV6T1
187
NJL1302D
247, 251
NLAS1053
151
NSBA143XDXV6T2
187
NJL3281D
247, 251
NLAS2066
151
NSBA143ZDXV6T1
187
NL17SV00
154
NLAS3158
151
NSBA144EDXV6T1
187
NL17SV02
154
NLAS323
151
NSBA144WDXV6T1
187
NL17SV04
154
NLAS324
151
NSBC113EDXV6T1
187
NL17SV08
154
NLAS325
151
NSBC114EDXV6T1
187
NL17SV16
154
NLAS3699
151
NSBC114TDXV6T1
187
NL17SV32
154
NLAS3799
151
NSBC114YDXV6T1
187
NL17SZ00
153
NLAS4157
151
NSBC115EDXV6T1
187
NL17SZ02
153
NLAS44599
151
NSBC123EDXV6T1
187
NL17SZ04
153
NLAS4501
151
NSBC123JDXV6T1
187
NL17SZ06
153
NLAS4599
151
NSBC124EDXV6T1
187
NL17SZ07
153
NLAS4684
151
NSBC124XDXV6T1
187
NL17SZ08
153
NLAS4685
151
NSBC143EDXV6T1
187
NL17SZ125
153
NLAS4717
151
NSBC143TDXV6T1
187
NL17SZ126
153
NLAS4717EP
151
NSBC143XDXV6T2
187
NL17SZ14
153
NLAS4783
151
NSBC143ZDXV6T1
187
NL17SZ16
153
NLAS5223
151
NSBC144EDXV6T1
187
NL17SZ17
153
NLASB3157
151
NSBC144WDXV6T1
187
NL17SZ32
153
NLAST44599
151
NSD914XV2T1
198
NL17SZ74
153
NLAST4501
151
NSDEMN11XV6T1
198
NL17SZ86
153
NLAST4599
151
NSDEMP11XV6T1
198
NL17SZU04
153
NLSF1174
166
NSF2250WT1
NL27WZ00
153
NLSF2500
166
NSL05TT1
NL27WZ02
153
NLSF3T125
166
NSL12AWT1
NL27WZ04
153
NLSF3T126
166
NSL12TT1
181, 190
NL27WZ06
153
NLSF595
166
NSL35TT1
181, 190
NL27WZ07
153
NMF3000FC
307
NSQA12VAW5
240, 298
NL27WZ08
153
NMFT3055AVLT1
292
NSQA6V8AW5
240, 298
NL27WZ125
153
NMFT3055AVLT3−LF
292
NSR0320MW2T1
194
NL27WZ126
153
NMFT3055AVT1
292
NSR0320XV6T1
195
NL27WZ14
153
NSB1010XV5T5
188
NSR15ADXV6T5
198
NL27WZ16
153
NSB1011XV6T1
188
NSR15DW1T1
195
NL27WZ17
153
NSB1706DMW5T1
188
NSR15SDW1T1
195
NL27WZ32
153
NSBA113EDXV6T1
187
NSR15TW1T2
195
NL27WZ86
153
NSBA114EDXV6T1
187
NSR30CM3T5G
195
NL27WZU04
153
NSBA114TDXV6T1
187
NSS35200CF8T1G
190
NL37WZ04
153
NSBA114YDXV6T1
187
NST3904DXV6T1
178
NL37WZ06
153
NSBA115EDXV6T1
187
NST3904M3T5G
177
NL37WZ07
153
NSBA123EDXV6T1
187
NST3906DXV6T1
178
NL37WZ14
153
NSBA123JDXV6T1
187
NST3906M3T5G
177
NL37WZ16
153
NSBA124EDXV6T1
187
NST3946DXV6T1
178
NL37WZ17
153
NSBA124XDXV6T1
187
NST489AMT1
190
NL7SZ18
166
NSBA143EDXV6T1
187
NTA4001N
280
http://onsemi.com 346
183 181, 190 190
Alphabetical Parts Listing Device Number
Page
Device Number
Page 284
Device Number
NTA4151P
280
NTD14N03R
NTA4153N
280
NTD18N06
NTA7002N
280
NTD18N06−001
NTB125N02R
285
NTD18N06L
NTB13N10
285
NTD18N06L−001
290
NTD4302
NTB18N06
285, 290
Page
NTD3055L170T4
291
NTD32N06
284
290
NTD32N06L
284
284, 290
NTD40N03R
284, 290
284 284, 291
NTD18N06LT4
290
NTD4302−1
290
NTB18N06L
285
NTD18N06T4
290
NTD4302T4
291
NTB23N03R
285
NTD20N03L27
284, 290
NTD50N03R
284
290
NTD20N03L27−001
290
NTD60N02R
284
NTD20N03L27G
290
NTD65N03R
284
NTD20N03L27T4
290
NTD6600N
284
NTD20N03L27T4G
290
NTD70N03R
284
NTD78N03
284
NTB23P06T4 NTB25P06 NTB30N06 NTB30N06L NTB30N06LT4 NTB30N20 NTB30N20T4
285, 290 285 285, 290 290 285, 290 290
NTD20N06 NTD20N06−001
291
NTD78N03R
284
NTD20N06L
284
NTD80N02
284
291
NTD85N02R
284
285, 291
NTD95N02R
284
NTB35N15
285, 292
NTD20N06T4
NTB35N15T4
290, 292
NTD20P06L
NTB4302
285
284, 291
NTD20P06LG
291
NTE4151P
280
NTB45N06
285, 290
NTD20P06LT4
291
NTE4153N
280
NTB45N06L
285, 290
NTD20P06LT4G
291
NTF2955
284
284
NTF2955T1
289
NTF3055−100
284
NTB45N06LT4
290
NTD23N03R
NTB45N06T4
290
NTD24N06
NTB52N10
285, 290, 292
NTB52N10T4
290
NTB5605P
285
NTB60N06
285, 290
NTB60N06L
285, 290
NTB60N06LT4
290
NTB60N06T4
290
NTB65N02R
285
NTB75N03−006 NTB75N03−006T4 NTB75N03L09
285, 289 290 285, 289, 290
NTB75N03L09T4
290
NTB75N03R
285
NTB75N06
285, 290
NTB75N06T4
290
NTB85N03
285
NTB90N02
285
NTD110N02R
284
NTD12N10 NTD12N10−001 NTD12N10T4
284, 291
284, 290
NTD24N06−001 NTD24N06L NTD24N06LT4 NTD24N06T4 NTD25P03L
NTF3055−100T1
289, 292
284, 291
NTF3055−100T3
289
291
NTF3055L108
284
291
NTF3055L108T1
285, 291
NTD25P03L1 NTD25P03LT4 NTD2955 NTD2955T4
NTD3055−094−001 NTD3055−094T4 NTD3055−150
289, 292 289
NTF3055L108T3
291
NTF3055L108T3G
289
NTF3055L108T3LF
289
291
NTD3055−094
NTF3055L108T1G
291
285, 291
NTF3055L175
289, 292
284
284, 291
NTF3055L175T1
289, 292
291
NTF3055L175T3
289, 292
291
NTF5P03
284
NTF5P03T3
289
284, 291
NTD3055−150−001
291
NTF6P02
284
NTD3055−150T4
291
NTGD1100L
282
NTD3055AVLT4
292
NTGS3433
282
NTGS3433T1
289
NTGS3441
282
NTGS3441T1
289
NTGS3443
282
NTGS3446
282
NTGS3455
282
NTD3055L104
284, 291, 292
NTD3055L104−001
291
NTD3055L104T4
291
NTD3055L170
284, 291, 292
291 290, 291
291
NTD3055L170−001
http://onsemi.com 347
291
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
NTGS3455T1
289
NTMD6P02R2
289
NTP75N03−006
286, 291
NTGS4111P
282
NTMFS4701N
283
NTP75N03L09
NTHC5513
281
NTMFS4707N
283
286, 291, 292
NTHD2102P
281
NTMFS4708N
283
NTHD3100C
281
NTMS10P02
283
NTHD3101F
281
NTMS10P02R2
289
NTHD3102C
281
NTMS3P03
283
NTHD4102P
281
NTMS3P03R2
289
NTHD4401P
281
NTMS4107N
283
NTHD4501N
281
NTMS4503N
283
NTHD4502N
281
NTMS4700N
283
NTHD4508N
281
NTMS4704N
283
NTHD4N02F
281
NTMS4705N
283
NTHD4P02F
281
NTMS4706N
283
NTHD5903
281
NTMS4N01
283
NTHD5904N
281
NTMS4N01R2
289
NTHS2101P
281
NTMS5P02
283
NTHS4101P
281
NTMS5P02R2
289
NTHS5404
281
NTMS7N03
283
NTHS5441
281
NTMS7N03R2
289
NTHS5443
281
NTMSD2P102L
283
NTJD1155L
281
NTMSD2P102LR2
289
NTJD2152P
280
NTMSD3P102
283
NTJD4001N
280
NTMSD3P102R2
289
NTJD4105C
281
NTMSD3P303
283
NTJD4152P
280
NTMSD3P303R2
289
NTJD4401N
280
NTMSD6N303
283
NTJS3151P
280
NTMSD6N303R2
289
NTJS3157N
280
NTP125N02R
NTJS4151P
280
NTP13N10
286, 291
NTJS4405N
280
NTP18N06
286, 291, 292
NTL4502NT1
285
NTLTD7900Z
282
NTMD2C02
283
NTMD2C02R2
289
NTMD2P01
283
NTMD2P01R2
289
NTMD3N08L
283
NTMD3P03
283
NTMD3P03R2
289
NTMD4N03R2
283, 289
NTMD6N02
283
NTMD6N02R2
289
NTMD6N03R2
289
NTMD6P02
283
286
NTP75N03R
Page
286
NTP75N06
286, 292
NTP85N03
286
NTP90N02
286
NTQD6866
282
NTQD6968N
282
NTQS6463
282
NTR0202PL
282
NTR0202PLT1
289
NTR1P02
282
NTR1P02L
282
NTR1P02LT1
289
NTR1P02LT3
289
NTR2101P
282
NTR4101P
282
NTR4501N
281
NTR4502P
282
NTR4503N
281
NTS2101P
280
NTS4001N
280
NTS4101P
280
NTTD1P02
282
NTTD1P02R2
291
NTTD4401F
282
NTTS2P02
282
NTTS2P02R2
292
NTTS2P03
282
NTTS2P03R2
292
NTY100N10
286, 292
NTP18N06L
286, 291
NTZD3152P
280
NTP27N06
286, 291
NTZD3154N
280
286
NTZD3155C
280
NTP2955 NTP3055AV
292
NTZS3151P
280
NTP30N20
286, 291
NUD3048M
NTP35N15
286, 292
282, 288, 317
NTP4302
286
NTP45N06
286, 291
NTP45N06L
286, 291
NTP60N06
286, 291, 292
NTP60N06L
286, 291
NTP65N02R
286
http://onsemi.com 348
NUD3105DM NUD3105L NUD3112 NUD3112DM
310 310 99, 107 311
NUD3112L
311
NUD3124
107
NUD3124DM
288, 311
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
NUD3124L
288, 311
NZL5V6AXV3
234
P6SMB11A
225
NUD3160DM
288, 312
NZL6V8AXV3
234
P6SMB11CA
226
NUD3160L
288, 312
NZL7V5AXV3
234
P6SMB120A
225
NUD4001DR2
313
NZMM7V0T4
306
P6SMB12A
225
NUD4011DR2
313
NZQA5V6AXV5
240, 299
P6SMB12CA
226
NUF2015W1
308
NZQA5V6XV5
236, 299
P6SMB130A
225
NUF2030XV6
308
NZQA6V2XV5
236, 299
P6SMB13A
225
NUF2042XV6
308
NZQA6V8AXV5
240, 299
P6SMB13CA
226
NUF2101M
308
NZQA6V8XV5
236, 299
P6SMB150A
225
NUF2220XV6
303
P2N2222A
183
P6SMB15A
225
NUF2221W1
308
P2N2907A
183
P6SMB15CA
226
NUF2222FC
308
P6KE100A
214
P6SMB160A
225
NUF2230XV6
303
P6KE10A
214
P6SMB16A
225
NUF2240W1
303
P6KE11A
214
P6SMB16CA
226
NUF3101FC
304
P6KE12A
214
P6SMB180A
225
NUF4105FC
305
P6KE13A
214
P6SMB18A
225
NUF4107FC
309
P6KE150A
214
P6SMB18CA
226
NUF4401MN
304
P6KE15A
214
P6SMB200A
225
NUF4402MN
304
P6KE160A
214
P6SMB20A
225
NUF6105FC
306
P6KE16A
214
P6SMB20CA
226
NUF6106FC
306
P6KE180A
214
P6SMB22A
225
NUF6401MN
305
P6KE18A
214
P6SMB22CA
226
NUF6402MN
305
P6KE200A
214
P6SMB24A
225
NUF6406MN
305
P6KE20A
214
P6SMB24CA
226
NUF8401MN
306
P6KE22A
214
P6SMB27A
225
NUF8402MN
306
P6KE24A
214
P6SMB27CA
226
NUF9001FC
306
P6KE27A
214
P6SMB30A
225
NUF9002FC
306
P6KE30A
214
P6SMB30CA
226
NUP1301ML3
238, 301
P6KE33A
214
P6SMB33A
225
NUP2105L
233, 299
P6KE36A
214
P6SMB33CA
226
NUP2201MR6
239, 301
P6KE39A
214
P6SMB36A
225
NUP2301MW6
239, 301
P6KE43A
214
P6SMB36CA
226
NUP4103FC
236, 299
P6KE47A
214
P6SMB39A
225
NUP4201DR2
240, 300
P6KE51A
214
P6SMB39CA
226
NUP4201MR6
240, 301
P6KE56A
214
P6SMB43A
225
NUP4301MR6
241, 300
P6KE6.8A
214
P6SMB43CA
226
NUP4302MR6
241, 300
P6KE62A
214
P6SMB47A
225
NUP4304MR6
241, 300
P6KE68A
214
P6SMB47CA
226
NUP5120X6
237, 297
P6KE7.5A
214
P6SMB51A
225
NUR30QW5
299
P6KE75A
214
P6SMB51CA
226
NUS2045MN
317
P6KE82A
214
P6SMB56A
225
NUS2401SN
313
P6KE9.1A
214
P6SMB56CA
226
NUS3045MN
317
P6SMB100A
225
P6SMB6.8A
225
NZF220DF
303
P6SMB10A
225
P6SMB62A
225
NZF220T
303
P6SMB110A
225
P6SMB62CA
226
http://onsemi.com 349
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
P6SMB68A
225
SA5534
12
SMF30A
219
P6SMB68CA
226
SA5534A
12
SMF33A
219
P6SMB7.5A
225
SA571
10
SMF36A
219
P6SMB75A
225
SA572
10
SMF40A
219
P6SMB75CA
226
SA575
10
SMF43A
219
P6SMB8.2A
225
SA58A
213
SMF45A
219
P6SMB82A
225
SA6.0A
213
SMF48A
219
P6SMB82CA
226
SA60A
213
SMF5.0A
219
P6SMB9.1A
225
SA64A
213
SMF51A
219
P6SMB91A
225
SA7.0A
213
SMF54A
219
P6SMB91CA
226
SA7.5A
213
SMF6.0A
219
PZT2222AT1
177, 181
SA8.0A
213
SMF6.5A
219
PZT2907AT1
177, 181
SA9.0A
213
SMF7.0A
219
PZT651T1
177, 181
SD05
230
SMF7.5A
219
PZT751T1
177, 181
SD12
230
SMF8.0A
219
PZTA42T1
182
SD12C
230
SMF8.5A
219
PZTA92T1
182
SE5532
14
SMF9.0A
219
RB520S30T1
195
SE5532A
14
SMS05
235, 298
RB521S30T1
195
SE5534
12
SMS05C
237, 297
RB751S40T1
195
SE5534A
12
SMS12
235, 298
RB751V40T1
194
SL05
238, 302
SMS12C
237, 297
SA10A
213
SL15
238, 302
SMS15
235, 298
SA11A
213
SL24
238, 302
SMS15C
237, 297
SA12A
213
SM05
232
SMS24
235, 298
SA13A
213
SM12
232
SMS24C
237, 297
SA15A
213
SMBJ12AON
227
SS16 T3
257
SA16A
213
SMF05
235, 298
SS22
258
SA170A
213
SMF05C
237, 297
SS24
258
SA17A
213
SMF10A
219
SS26
258
SA18A
213
SMF11A
219
STF202−22
308
SA20A
213
SMF12A
219
T2322B
272
SA24A
213
SMF12C
237, 297
T2800D
273
SA26A
213
SMF13A
219
TCA0372
SA28A
213
SMF14A
219
TCA0372B
14
SA30A
213
SMF15A
219
TDA1085C
107
SA33A
213
SMF15C
237, 297
TIP100
249
SA36A
213
SMF16A
219
TIP101
249
SA40A
213
SMF17A
219
TIP102
249
SA43A
213
SMF18A
219
TIP105
249
SA45A
213
SMF20A
219
TIP106
249
SA48A
213
SMF22A
219
TIP107
249
SA5.0A
213
SMF24A
219
TIP110
249
SA51A
213
SMF24C
237, 297
TIP111
249
SA5230
12
SMF26A
219
TIP112
249
SA5532
14
SMF28A
219
TIP115
249
http://onsemi.com 350
10, 14
Alphabetical Parts Listing Device Number
Page
Device Number
Page
Device Number
Page
TIP116
249
TIP30A
245
TIP42C
246
TIP117
249
TIP30B
245
TIP47
245
TIP120
249
TIP30C
245
TIP48
245
TIP121
249
TIP31
245
TIP50
245
TIP122
249
TIP31A
245
TL431
74
TIP125
249
TIP31B
245
TL431A
74, 75
TIP126
249
TIP31C
245
TL431B
74, 75
TIP127
249
TIP32
245
TLV431A
74, 75
TIP131
249
TIP32A
245
TLV431B
74, 75
TIP132
249
TIP32B
245
TRA2525
266
TIP137
249
TIP32C
245
TRA2532
267
TIP140
250
TIP33A
247
TRA3225
266
TIP141
250
TIP33C
247
UAA2016
TIP142
250
TIP35A
247
99, 100, 107, 111
TIP145
250
TIP35C
247
TIP146
250
TIP36A
247
TIP147
250
TIP36C
247
TIP29
245
TIP41
246
TIP2955
247
TIP41A
246
TIP29A
245
TIP41B
246
TIP29B
245
TIP41C
246
TIP29C
245
TIP42
246
TIP30
245
TIP42A
246
TIP3055
247
TIP42B
246
http://onsemi.com 351
mESD3.3D
234
UMA4NT1
188
UMA6NT1
188
UMC2NT1
188
UMC3NT1
188
UMC5NT1
188
UMZ1NT1
178
VN2222LL
286
VN2410L
286
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