Introduction to Microelectronic Fabrication.pdf

PHYSICAL CONSTANTS

Symbol

Va lue

Name

q

Magnitude of eleclronic charge

"'0

Electron rest mass

1.602xIO- 19C 9. I09xlO- J' kg

Pcrmittivity oC vacuum

1.673 x 10 l1kg 2.998 x 10" mls 8.854 X 1O- '2 F/m

Bolt7mann's constant

1.381 X 10

Proton rcst mass Specd of light in vacuu m

, t,

2J J /K

8.617 X IO- J eV/ K Planck's constant

6.625 x 10

.M

4.135 x 10

I~CV_S

J-s

A,

Avogadro number

6.022 x I SF6 • CF4 CCI•. CF4 • NF.\. SF6 CF4 , c;F6' CJFs• C I'IF3 CF~. c;F6' C I IFJ • SF6 CCI.,.Clz, BG, ~Cl2F•• CF. CI,

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2.2 .4

Chapter 2

lithography

Metrology and Critical Dimension Control It is extremely important 10 be able to maintain accuratc contro l of critica l d imensions (CDs) through pho tolithography and etching processes. as well as subseque nt process

steps. The ITRS contains projec tio ns of the required levels of CD control. l 'he ability to reliably measure the fabri cated features with the required accu racy and repeatability is itself a major problem, and semiconducto r process me trology has emerged as a separate discipline o f its own that concentrates on the development of the test structures and instrumentation required to support high-yield manufacturing. 2.3

PHOTOMASK FABRICAnON

Photomask fabrication involves a selies of photographic processes outlined in fig. 2.9. An IC mask begins with a large-scale drawing of each mask. Early photoma