These are the few interview questions which are very important for Campus placements/IIT interviews/PSU interview in Ele...
Few Brain Teasers in ECE/TCE/IN Department 1
-t2
1.The int 1.The integr egral al (-t) (t) t 2 e dt eva evalua luates tes to (a) -4/3 (b) 0 (c) 4/3 (d) – 2/3 2. Point charge chargess = 1 nc and = 2 nc are at a distance apart. Which of the following statements are incorrect (a) force on is repulsive (b) The force on is the same in magnitude as that onQ1 (c) As the Distance between them decreases, the force on Q1 increases linearly linearly.. (d) The force on is along the line joining them (e) A point charge = -3 nc located at midpoint between Q1 andQ2 experience no net force 3. Suppose uniform field exists in room in which you you are working , such that that lines of of force force are Horizontal Horizontal and and at right right an gles to one wall. As you walk toward wall from which the lines of force emerge into room, are you walking toward ? (a) Points of higher potential (b) Points of lower potential (c) Points of same potential 4. Which of the following operations are not associative (a) inhibition (b) NOR (c) implication 5. Assuming ‘n’ element Boolean Algebra, Algebra, how many functions are are there for ‘m’ variables ? 6. In Transmission Transmission Lines, why we are considering considering R, L, G, C as Distributed parameters where where as in normal wires we are not ( ( considering them them as distributed : t t sin ( cos( T T 2 2 t ( 1-4 tT 7. Find the Fourier transform of the following signal (T 8. How long does it take an average electron electron to drift 1ìm in pure ‘Si’ at electric field of V/cm (a) 0.74 Psec (b) 10 Psec (c) 0.1 Psec (d) None 9. 1.
Cos
t c
H(t) +
s(t)
m(t)
_ j
1 +
- 10
m(t) =
H(t)
- 1000
Sin c t
i. Lowest positive c = 2ð × 10 rad/sec (a) Find Highest frequen frequency cy component of s(t)
_ -j
1000
10
5
2. 3.
6
(b) Find the Band width of s(t)
2
X e -x . dx = ?
(a) 0 (b) 320 (c) 160 Consider the circuit given below. Also,
(d) 960 i2
R2
R1 Vi
i1
+ V _
A o
+ _ Vo
(a) A F = V o Vi (amplification with feedback) _ (b) A o = V o/ V (amplifi (amplification cation without feedback) A o (c) Input resistance to A o is much greater than R 1 and R 2 is large and negative . (d) Output resistance of A o is much less than R 1 and R2 What is the dependenc dependencee of A F on A o GATE P S U
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Why GATE Preparation GATE is l
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