Fab Presentaion

AND

FOR A RESEARCH BASED IC FABRICATION FACILITY -i

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1 SAMI UR REHMAN

Difference between Si wafer processing and compound (III/V) wafer processing

Oxidation -i

Silicon has a natural oxide while compound semiconductors do not (deposition required). Compound semiconductor requires epitaxial deposition techniques which are quiet expensive!

Stability Most of these compound semiconductors are not stable at high temperatures unlike Si. For Si, one would therefore make MOSFET kind of structures.

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Difference between Si wafer processing and compound (III/V) wafer processing Lattice Constants The first and principal difference between a Si and a GaAs substrate is the respective lattice constants. Crystalline materials (thin films) which will be deposited on top of such substrates will have to take this into account.

Etching Compound semiconductors like GaAs also requires a complex Chlorine based etch process unlike Si (F based etch).

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WHAT IS A CLEAN ROOM? •

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A clean-room or clean room is an environment, typically used in manufacturing and scientific research, that has a low level of environmental pollutants such as dust, airborne microbes, aerosol particles and chemical vapors (Wikipedia) What matters is Particle size and particle number The standard is called: FED-STD-209 E This standard was cancelled on Nov 2 011 Standardizing Agency: U.S. General Services Administration (GSA) Replaced by ISO 14644-1

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CLEAN ROOM CLEAN ROOM STANDARDS

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Particle Counters are used to determine the air quality by counting and sizing the number of particles in the air. This information is useful in determining the amount of particles inside a building or in the ambient air It also is useful in understanding the cleanliness level in a controlled environment.

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Cost Analysis •

Quotations have been sent

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SANCO

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Rough estimates of the equipment have been obtained from:

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CLEAN ROOM PARTICLECOUNTERS Manufacturer Model Price Year of Manufacture

Capovani Brothers Inc PARTICLE MEASURMENT SYSTEMS LPS A-310 $ 7,350.00 (each) 2001 -i

Dimensions Weight Accessories/Othe r Information

Width8.750 in eight7.000 (22.2 cm) Depth18.000 in (17.8 cm) in (45.7 cm) H 30 lb (14 kg) Maximum Number of Channels =4 Channel Sizes= 0.3, 0.5, 1.0, 5.0 µm Light Source=HeNe Multimode, Passive Cavity

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$7,350

CLEAN ROOM PARTICLECOUNTERS Manufacturer Model Price Year of Manufacture Dimensions Weight Accessories/Other Information

Pacific Scientific MET ONE $ 4,250.00 2001 Width13.000 in (33.0 cm) Depth12.000 in (30.5 cm) Heig ht7.000 in (17.8 cm) 30 lb (14 kg) Part no.: 331-3-1-AL Particle size: 0.3 to 10 Micron

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$4,250

CLEAN ROOM

AIR CONDITIONER/AIR FLOW CONTROLLER Manufacturer Model Price Year of Manufacture Dimensions

Air Control Inc. VLF CART $ 3,250.00 1998 Width 74.000 in (188.0 cm) -i

Depth Height

Weight Accessories/Other Information

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21.000 in (53.3 cm) 74.000 in (188.0 cm)

5,459 lb (2,476 kg) Unit contains a 9W X 10H array of stainless steel cubicles (6.25"W x 4"H x 11"D) Blower: (2) EBM's STD Prefilter #: (2) 16 x 20 x 1 Hepa Filter #: (1) 18 x 48 x 3

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$3,250

CLEAN ROOM

AIR CONDITIONER/AIR FLOW CONTROLLER Manufacturer Model Price Year of Manufacture Dimensions

Air Control Inc. AirPod

Width: AirPod I: 62.50”, AirPod II: 80.50”, AirPod III: 104.50”

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Height: 31.00” Depth: 31.00” Weight

Weight (lbs): AirPod I: 312, AirPod II: 394, AirPod III: 455

Accessories/Other Information

Nominal Air flow: 2500 CFM (3/4 HP), 5000 CFM (3HP), 4000 CFM (3HP with AD after-filter). Blower Pkg (HP): AirPod I: 2-speed forward curve, direct drive; AirPod II & III: Dynamically balanced, nonsparking, motor/blowers. (Optional 2-speed motor/blower available for AirPod II.) Electrical: AirPod I, standard: 115/1/60, 11.4 amps, 3/4 HP; AirPod II & III, standard: 208-230/460/3/60, 7.87.2/4 amps, 3 HP; op tional: 230/1/60 11.7 amps, 3 HP.

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$3,000

IC FABRICATION PHILOSOPHY! Adding layer onto wafer!

Adding impurities in wafer!

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Deposition

Implantation

Removing an added layer!

Photolithography

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11 Etching

III/V Group ingot production Similar to the silicon ingot growth process, elemental forms of III and V group elements, plus small quantities Quartz Tube of dopant material-silicon, Rotating Chuck -i

tellurium or zinc-are reacted elevated temperatures to at form ingots of doped singlecrystal III/V material like GaAs.

Seed Crystal Growing Crystal (boule)

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RF or Resistance Heating Coils Molten Silicon (Melt) Crucible

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Photomask Creation •

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The photomask is a copy of the circuit pattern, drawn on a glass plate coated with a metallic film. The glass plate lets light pass, but the metallic film does not. -i

Due to increasingly high integration and miniaturization of the pattern, the size of the photomask is usually magnified four to ten times the actual size.

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PHOTOLITHOGRAPHY Wafer processing consists of a sequence of additive and subtractive steps with patterning!!!!! oxidation deposition ion implantation

etching

lithography

Lithography refers to the process of transferring a circuit pattern,

embedded on a mask, to the surface of the wafer Equipment, materials, and processes needed: •

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A mask (for each layer to be patterned) with the desired pattern A light-sensitive material (called photoresist) covering the wafer so as to receive the pattern A light source and method of projecting the image of the mask onto the photoresist (“printer” or “projection stepper” or “projection scanner”) A method of “developing” the photoresist, that is sele ctively removing it from the regions where it was exposed

Photolithography is a process analogous to developing film in a darkroom

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PHOTOLITHOGRAPHY STEPS •

1 # PRE BAKE THE WAFER Wafer is preheated to about 200 - 250 degrees C in a bake oven. The purpose o f this step is to ensure that the wafer is completely dry. Any moisture on the wafer surface would -i

interf ere with the photolithography process, causing it to yield poor results.

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PHOTOLITHOGRAPHY STEPS •

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2 # PHOTORESIST APPLICATION AND SPINNING The wafer is placed on the wafer chuck in the center of the Photoresist Spinner. After properly adjusting the wafer on t he spinner, photo resist material is applied onto the surface of -i

the wafer and is spun so that photo resist evenly distributes on the wafer •

Using the Nitrogen Gun, now the wafer surface is

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Blown to remove any dust particles. 16

PHOTOLITHOGRAPHY STEPS Photoresist Raw Materials

http://www.mitsuichemicals.com/photoresist.htm

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PHOTOLITHOGRAPHYSTEPS Photo resist properties http://www.cleanroom.byu.edu/photoresists.phtml

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Photoresist Spin Coater PR

Wafer

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EBR

Water Sleeve Chuck Drain

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Exhaust Vacuum 19

Photoresist Applying

PR dispenser nozzle -i

Wafer

Chuck

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Spindle

To vacuum pump 20

Photoresist Suck Back

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 21

Photoresist Spin Coating

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 22

Photoresist Spin Coating

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 23

Photoresist Spin Coating

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 24

Photoresist Spin Coating

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 25

Photoresist Spin Coating

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 26

Photoresist Spin Coating

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 27

Photoresist Spin Coating

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 28

Photoresist Spin Coating

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 29

Photoresist Spin Coating

PR dispenser nozzle PR suck back

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Wafer

Chuck

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Spindle

To vacuum pump 30

Edge Bead Removal

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Solvent

Wafer

Chuck

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Spindle

To vacuum pump 31

Edge Bead Removal

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Solvent

Wafer

Chuck

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Spindle

To vacuum pump 32

Optical Edge Bead Removal Exposure Light source Photoresist

Light beam

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Wafer

Exposed Photoresist

Chuck

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Spindle

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PHOTOLITHOGRAPHY STEPS

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3 # SOFT BAKE The wafer is placed into the Soft-Bake Oven for 30 minutes. The purpose of the soft bake is to semi-harden the photoresist

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Methods of SoftBake •

Hot plates

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Convection oven

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Infrared oven

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Microwave oven

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Baking Systems

Wafer

MW Source -i

Heater

Heated

N2

Photoresist Chuck

Wafers Vacuum

Wafer

Heater Hot plate

Convection oven

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Vacuum Microwave oven 36

Hot Plates

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Widely used in the industry

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Back side heating, no surface

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“crust”

Wafer

In-line track system

Heater

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PHOTOLITHOGRAPHY STEPS •

4 # EXPOSE TO UV LIGHT

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carefully place the wafer on the wafer chuck of the Aligner

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When the wafer has been properly aligned to the mask, expose it to UV light the exposure time should be set according to the particular type of photo resist and wattage of the bulb being used .

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Alignment Gate Mask

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Photoresist Polysilicon n+

n+ P-Well

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Exposure Gate Mask

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Photoresist Polysilicon n+

n+ P-Well

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Ready for Post Exposure Bake

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Photoresist Polysilicon n+

n+ P-Well

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PHOTOLITHOGRAPHY STEPS •

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5 # DEVELOPMENT The type of developer solution used is determined by the type of photoresist chosen. Then we check the developer for the recommended development time. Typically, this will be around 30 seconds Then the wafer is immersed in the developer and agitate mildly until the time has expired. Finally the wafer is rinsed with io nized water

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Schematic of a Spin Developer DI water

Developer

Wafer

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Water sleeve Chuck

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Drain Vacuum 43

Applying Development Solution Exposed Photoresist

Development solution dispenser nozzle -i

Wafer

Chuck

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Spindle

To vacuum pump 44

Applying Development Solution Exposed Photoresist -i

Wafer

Chuck

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Spindle

To vacuum pump 45

Developer Spin Off Edge PR removed

Patterned photoresist

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Wafer

Chuck

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Spindle

To vacuum pump

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DI Water Rinse DI water dispenser nozzle -i

Wafer

Chuck

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Spindle

To vacuum pump

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Spin Dry

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Wafer

Chuck

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Spindle

To vacuum pump 48

Ready For Hard Bake

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Wafer

Chuck

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Spindle

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Development Profiles PR

PR Substrate

Normal Development

PR

Substrate

Incomplete Development

PR

Substrate Under Development

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Substrate Over Development

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Developer Solution •

+PR normally uses weak base solution -i

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The most commonly used one is the tetramethyl ammonium hydride, or TMAH ((CH3)4NOH).

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Developer Solutions Positive PR

Negative PR -i

Developer Rinse

TMAH DI Water

Xylene n-Butylacetate

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PHOTOLITHOGRAPHY STEPS •

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6 # HARD BAKE THE WAFER The wafer is placed into the Hard Bake oven now which should be preheated to between 120-130 degrees C. The wafers should remain in the hard bake oven for 30 minutes. This prepares the wafer for the next processing step.

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Types of Photoresist Negative Photoresist

Positive Photoresist

• Becomes insoluble

• Becomes soluble

after exposure • When developed, the unexposed parts dissolved.

after exposure • When developed, the exposed parts dissolved

• Cheaper

• Better resolution

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Negative and Positive Photoresists Photoresist Substrate

UV light Mask/reticle -i

Photoresist

Substrate

Exposure

Negative Photoresist Substrate

Positive

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After Development

Photoresist Substrate

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Comparison ofPhotoresists

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PR

+ PR

Film

Film

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Substrate

Substrate

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Wafer In Hot Plate

Spin Station

Stepper -i

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Track Robot

Developer dispenser

Hot Plate

Track

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Pre-bake and Primer Vapor Coating Hot Plate

Spin Station

Stepper -i

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Track Robot

Developer dispenser

Hot Plate

Track

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Photoresist Spin Coating Hot Plate

Spin Station

Stepper -i

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Track Robot

Developer dispenser

Hot Plate

Track

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Soft Bake Hot Plate

Spin Station

Stepper -i

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Track Robot

Developer dispenser

Hot Plate

Track

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Alignment and Exposure Hot Plate

Spin Station

Stepper -i

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Track Robot

Developer dispenser

Hot Plate

Track

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Post Exposure Bake (PEB) Hot Plate

Spin Station

Stepper -i

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Track Robot

Developer dispenser

Hot Plate

Track

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Development Hot Plate

Spin Station

Stepper -i

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Track Robot

Developer dispenser

Hot Plate

Track

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Hard Bake Hot Plate

Spin Station

Stepper -i

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Track Robot

Developer dispenser

Hot Plate

Track

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Wafer out Hot Plate

Spin Station

Stepper -i

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Track Robot

Developer dispenser

Hot Plate

Track

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Resolution •

The achievable, repeatable minimum feature size -i

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Determined by the wavelength of the light and the numerical aperture of the system. The resolution can be expressed as

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Resolution R



K1 NA

• K1 is the system constant 

is the wavelength of the light

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NA = 2 ro/D, is the numerical aperture 67

Numerical Aperture • NA is the ability of a lens to collect diffracted

light -i

• NA = 2 r0 / D – r0 : radius of the lens – D = the distance of the object from the lens

• Lens with larger NA can capture higher order

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of diffracted light and generate sharper image. 68

To Improve Resolution •

Increase NA •

Larger lens, could be too expensive and unpractical -i

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Reduce DOF and cause fabrication difficulties Reduce wavelength •

Need develop light source, PR and equipment

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Limitation for reducing wavelength

•

UV to DUV, to EUV, and to X-Ray

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Depth of focus •

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The range that light is in focus and can achieve good resolution of projected image Depth of focus can be expressed as:

DOF



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K 2

2( NA)

2

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Depth of Focus •

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Smaller numerical aperture, larger DOF •

Disposable cameras with very small lenses

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Almost everything is in focus

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Bad resolution

Prefer reduce wavelength than increase NA to improve resolution

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High resolution, small DOF

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Focus at the middle of PR layer

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Photolithography MASK ALLIGNER Karl Suss MA-6 Mask Aligner

Description Can handle Si and Compound semiconductor wafers Up to 6"in size 240 nm to 365 nm wavelength. 1:1 exposure system Maximum wafer thickness: 4.3mm Alignment accuracy of +-0.5um

$69,000

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Photolithography MASK ALLIGNER Mask-aligner EV-420

Description Contact mask-aligner for optical lithography Double side exposure Lamp power: 350 W Illumination spectrum: no filters

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Photolithography MASK ALLIGNER Manufacturer Model Weight

SussMicrotec BLE RESPECT 600 880 lb (399 kg)

Accessories/ Other Specifications 400 V 16 A 50 Hz System features

Programmable controller PC with windows NT4SP6 and

applications program Respect 1.0b0087/1.1b0002 Touch screen

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RS 232 Interface Vacuum monitoring

External cabinet exhaust connection Automatic exhaust control 

Media control panel



Silicon and compound semiconductor wafers

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Photolithography SPINNERS Solitec 5100 LVT

$30,000

Provides spin processing of single wafers/substrates of up to 22 5mm diagonal Tools for loading and centering for: 4 inch (100 mm) substrate -i ) 2 inch (50 mm) substrate m m a o c Solitic is the main manufacturer of this equipment, Various models from the (s .t N o p same Company shown below A s g

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•

  

M H E R R U I M A S

lo b . n a m h e r

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Photolithography BAKE OVENS Yes 450pb oven Description: The 450PB is a high temperature vacuum oven using a programmable temperature controller and programmed vacuum and nitrogen flow cycles for curing of polyimide films. -i

The unitthe features filtered heated nitrogen the roof through floor of the chamber. This flowpurging acts to from cleanthe theentire waferssurface during of the process.

$22,500 Specs Capacity: Up to two boats of 6 inch wafers Ramp: 8°C/min Cool-down: 1-2°C/min Max Temperature: 400°C Idle Temperature: 50°C

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WAFER PROCESSING

Deposition

• CVD • PECVD • PVD • SPUTTERING • EVAPORATION • MBE

Etching

• DRY ETCHING • WET ETCHING

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Ion implantation

• DIFFUSION • ANNEALING

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CHEMICAL VAPOR DESPOSITION

Chemical Vapor Deposition is the formation of a non-volatile solid film on a substrate by the reaction of vapor phase chemicals (reactants) that contain the required constituents.

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CHEMICAL VAPOR DESPOSITION

•

Gases to be reacted are entered into the CVD chamber and react to produce the desired material to be deposited on the wafer under -i

•

•

extremely high temperature. Wafer temp is cooler than the furnace Changing the reacting gases we can produce any material to be deposited

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PECVD

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PECVD uses two electrodes one of which contains the wafer A strong electric field b/w the e lectrodes ignites -i

the plasma which decomposes the reactant gases into the material to be deposited on the wafer substrate.

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SPUTTERING

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High energy plasma knocks metal atoms out of its crystalline structure and are deposited on the wafer substrate! -i

Mainly used for creating metal contacts (Aluminum, Titanium etc)

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SPUTTERING PVD75 RF Sputterer

Description The RF sputterer can be used to deposit many dielectrics. Sputter two or more dissimilar materials simultaneously for complete control of film stoichiometry (co-deposition) Integrated touch screen control Single substrate up to 12" diameter Multiple substrate up to 4" diameter Substrate fixture rotation up to 20rpm • • • • • • •

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SPUTTERING ARC-12M sputtering system

Gases available: Ar, O2 & N2 - DC sputtering power source: 2 x 250W - RF sputtering power source: 600W at 13.56MHz - Chamber pressure: 5x10-6 torr - Substrate size: 2”, 4” wafer or square glass, or specimen

$55,000 -i

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- Targets available: Ag, Al, Al/Si (1%), Au, Cu, Cr, Hf, Mo, Pt, SnO2, SiN, Ti, TiW 83 http://www.mff.ust.hk/Eq_Sputter.htm

SPUTTERING CVC DC Sputterer

Description The DC sputterer is used to coat samples with metals. Metal coatings are usually performed with this sputterer or with the CVC E-Beam evaporator. -Process wafers/substrates up to 6" -Computer-controlled planetary system for uniform deposition -Two 3" and two 8" sputter guns -i

Capabilities Deposition - Metal Deposition - Aluminum Chromium - Copper Gold Iron Nickel $55,000 to Palladium 110,000 Platinum Ruthenium

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EVAPORATION

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Metal atom to be deposited are held in a tungsten coil which carries huge currents The metal evaporates under intense heat and -i

finally deposits on a relatively cooler wafer.

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EPITAXIAL DEPOSITION THERMAL EVAPORATORS •

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Denton SJ20C SOURCE: University of UTAH Description 4 source hearth Film thickness monitor/deposition controller

$30,000

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EPITAXIAL DEPOSITION MOLECULAR BEAM EPITAXY

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http://department.fzu.cz/surfaces/mbe/soubory/mbe/mbe_method.htm

The MBE process during the epilayer growth on GaAs substrate. Typical working temperatures of the effusion cells : Ga ~1000oC, Al ~1100oC, As ~300oC, Be ~900oC, Si ~1100oC.

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WET ETCHING

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Various mixtures of wet-chemical acid solutions are used for wet etching. The primary acids used are sulphuric , hydrofluoric (HF), hydrochloric (HCl) and phosphoric . As in silicon -i

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processing, hydrogen hydr perooxide xide isprovides used with sulphuric acid, and ammonium a caustic etch. A cyanide solution (sodium or potassium) is also used for etching aluminium. As an alternative to wet etching, a plasma etching and process is used. The reactor configurations and reactant gases are very similar to those util ized in silicon device processing.

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PLASMA ETCHING

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In this form of etching, plasma is used to produce chemically reactive gases which are then made to react with the material to be -i

etched on the wafer substrate!

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PLASMA ETCHING OXFORD PLASMALAB100 Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter under variable temperatures. Applications: High-temperature InP etching Physical milling of most III-V semiconductors Reactive etching of III-V semiconductors Reactive etching of metals Example Use: III-V material and Metals etch

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PLASMA ETCHING OXFORD PLASMALAB100 Oxford Plasmalab 100: Highly flexible plasma etcher to selectively etch III-V group and metals on planar substrates up to 200mm in diameter under variable temperatures. Applications: High-temperature InP etching Physical milling of most III-V semiconductors Reactive etching of III-V semiconductors Reactive etching of metals Example Use: $29,000 III-V material and Metals etch

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PLASMA ETCHINGICP Metal Etcher-Unaxis SHUTTLELINE ICP

Chlorine-based system utilizing Boron Trichloride and Chlorine to etch metals and III-V group materials on planar substrates up to 150mm in diameter. ICP: 2.0 MHz 2500W RF: 13.56 MHz 300W Gases: Cl2, Ar, BCl3, SF6, O2 Applications: Anisotropic etching of metal films Etches Chromium, Aluminum, and other Chlorine-based etchable metals Other materials etchable by SF6, Ar, and O2 Demonstrated Use: Al, Cr and GaAs quantum dots and SiC etch

$120,000

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PLASMA ETCHING SAMCO RIE200iP

Manufacturer: SAMCO International Classification: Dry Etch Equipment: Inductively coupled plasma etching Uses: Etching of InP, GaAs, and other III-V compounds, SiNx, SiO2, and photoresist Etch gases Cl2, SiCl4, BCl3, Ar, CF4, CHF3, and O2 http://www.princeton.edu/mnfl/the-toollist/samco-rie200ip/

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METROLOGY AND INSPECTION EQUIPMENT

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SURFACE PROFILER Tencor Sono Gauge 300

For single point measurement of Wafer thickness, Aluminum film thickness and Sheet resistance of metal film. Wafer Diameter : 3”, 4”, 5” and 6” Substrate Thickness : 250-700 μm Sheet Resistance : 1 to 1999 Ω/sq. Minimum Metal Film Thickness : 100Å

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$6,800

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PARAMETER ANALYSER HP 4145B SemiconductorParameterAnalyzer

Specs • • • • • • • •

$4,500

In/Out Ports : 8 Source/Monitor Unit : 4 Voltage Source : 2 Voltage Monitor : 2 Voltage Resolution : 1 mV Current Resolution : 1 pA Maximum Voltage : 100 V Measurement Function : DC current through voltage-biased or current-biased devices

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PROBE STATION Signatone S-1160 Manual probe station

Specs

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Microscope of 10x to 70x mag nification 4 Micropositioners in S-926 series X-Y-Z motion : 254 microns per knob revolution Tip diameter : 4 microns Vacuum chuck

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Max. accept a 6”wafer

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Temperature from room temp. to 300

$5,500 -i

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STRESS MEASUREMENTSYSTEM Film StressMeasurement System SMSi 3800

Measure the change of curvature induced in a sample due to the deposited film on a reflected substrate. Measure 1-D stress and produce 3-D topographical profile Specs 2” to 8” Wafer size : Thickness Limit : less than 11 mm Statistical process control and spreadsheet compatibility Automatic segmentation calculation • • • •

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WET BENCH Amerimade 8ft Polypro Wet Bench

Construction: Polypro wet bench - Length: 8ft - Teflon Heated Bath Tanks (Qty 3): a. can handle up to 6" wafers b. Dims: 7"x10"x10" (WxDxH) c. Immersion heater at bottom of tank d. Temperature controllers for each tank - Teflon Static Bath Tank (Qty 1): a. can handle up to 6" wafers b. Dims: 7"x10"x10" (WxDxH) c. Immersion heater at bottom of tank d. Temperature controllers for each tank - Teflon Rinse Sinks (Qty 2): a. Dims: 5.5"x9"x5" (WxDxH) DI Spray Gun - 1 Amerimade Bath Timer - 2 Photohelic Exhaust Monitors - 5 Tank Fill Buttons - 4 Alarm Buttons

$10,000

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WET BENCH JST 4ft Stainless Steel Wet Bench

Model: JST STA00115 - Overall Length: 4ft - Dimensions: 48"x50"x82" (LxWxH) - All tanks sized for single 4"/100mm cassette - All tanks programmed via PLC controller - Automatic wafer handling (cassette) via robot - Heated Recirculating Stainless Steel Tank: a. Tank is heated and recirculating b. White Knight Pneumatic Pump c. Tank Lid d. Tank dimensions: 7.5"x7.25"x15" (LxWxH) e. Condenser - Quick Dump Rinse (QDR) Tank: a. Dimensions: 7.5"x7.5"x5" (LxWxH) b. Controlled via PLC controller c. Tank Lid

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$10,000 100

- Static Stainless Steel Tank: a. Tank dimensions: 7.5" x 7.5" x 7" (LxWxH) b. On/Off Drain

MICROSCOPES AMERICAN OPTICAL STEREO ZOOM MICROSCOPE 7X - 42X

Unit Price

$ 525.00

Number of Units

1

Manufacturer

American Optical

Model

570 -i

Binocular Angle Eyepieces

Magnification

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45°

10 X

Magnification Range

7 X - 42 X

Zoom Range

0.7 X - 4.2 X

Illumination Type

None

Stand Type

None

Condition

Very Good

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$525

MICROSCOPES OLYMPUS GSWH20X/12.5 Unit Price Number of Units Manufacturer Model Binocular Angle Eyepieces

$ 3,000.00 1 Olympus SZ1145 CHI 45°

Model Magnification Field Number Focusing Magnification Range Zoom Range Illumination Type Stand Type

GSWH20X/12.5 20 X 12 mm YES 36 X - 220 X

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1.8 X - 11.0 X Coaxial Incident Light (Type A) 102

$3000

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Cost Model

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Shipment Cost not included Most Equipment are used

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HR cost: US $ 14,000 / year

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Minimum Equipment cost: US $ 336,750

US $ 350,750

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