DSA-264741

Product Information 2004

MEMORY DRAM Modules

Including DDR2 Modules

w w w. i n f i n e o n . c o m / m e m o r y

Never stop thinking.

Introduction One-Stop-Shopping for DRAM Modules J U N E 2 0 0 4 . As a leading memory products supplier, we offer an extensive range of leading-edge DRAM modules. These DRAM modules come in a variety of designs and densities to meet your application-specific needs. W H E T H E R Y O U ’ R E L O O K I N G to ramp up speed, increase density, or extend battery life, you’ll find answers in this brochure. Many of our DRAM modules now also come in green packages, enabling you to get a head start on upcoming environmental regulations.

Highlights of this Brochure Range of typical applications Short introduction of Fully Buffered DIMMs, MicroDIMMs, and Mini-DIMMs Upcoming technical and product-related trends DDR2 module details DDR module information Package-based information such as chip-sized package and stacked die technology Green (lead and halogen-free), more environmentally friendly modules

The following table covers all products and densities available: Double Data Rate (DDR / DDR2), Dual Inline Memory Modules (DIMMs). 128 MB

Unbuffered DDR Registered DDR Registered DDR Reduced Height SO-DIMM DDR Unbuffered DDR2 Registered DDR2 SO-DIMM DDR2

+ + +

256 MB 512 MB

1 GB

2 GB

+ + + +

+ + + +

+ + + +

+ +

+ + +

+ + +

+ + +

+ + +

4 GB

+

For more detailed information on the products presented in the table, please visit www.infineon.com/memory. 2

Applications D E P E N D I N G O N T H E I R main application, the memory industry differentiates between Unbuffered DIMM, Registered DIMM, Fully Buffered DIMM (FBDIMM), Small Outline DIMM (SO-DIMM), MicroDIMM, and Mini-DIMM. Typically used in Unbuffered DIMM

Desktop PC systems

Memory that does not contain buffers or registers located on the module.

Low-end servers

( Number of pins: DDR2 = 240, DDR = 184, SDR = 168 )

Workstations

Registered DIMM

High-end servers

Several additional circuits are on the module, including a Phase Lock Loop

High-end workstations

for timing alignments, a number of drivers that buffer the control, and

T O D

address signals from the memory controller on the motherboard.

A

( Number of pins: DDR2 = 240, DDR = 184, SDR = 168 )

Y

Small Outline DIMM (SO-DIMM)

Space-constrained applications

An enhanced version of a standard DIMM. A 72-pin small outline DIMM is

Laptops, mobile workstations

about half the length of a 72-pin SIMM.

ECC SO-DIMMs in networking

(Number of pins: DDR / DDR2 = 200, SDR = 144)

applications (routers)

Fully Buffered DIMM (FBDIMM)

High-speed and high-density

For server applications where lots of DRAM components are required, a new

applications

solution complementing the registered DIMM modules for data rates of 533 Mbits/s

High-end servers and

and above becomes necessary. FBDIMM is a new memory interconnect

workstations

technology standard for high-end memory connections. FBDIMM transitions

T O

the memory channel to a point-to-point interface, replaces the on-DIMM PLL,

M

and registers with a memory buffer chip.

O

MicroDIMM

Sub-notebooks

Small form factor SO-DIMMs.

Mini PCs

( Number of pins: DDR2 = 214 )

R R O W

Mini-DIMMs for DDR2

Blade servers

Small form factor registered DIMMs.

Mobile workstations

( Number of pins: DDR2 = 244 )

Routers ( Mini-ECC-DIMM )

3

DDR2 MicroDIMM, 512 MB, 512 Mbit based, FBGA package

I n d u s t r i a l Tr e n d s A S A P R O V I D E R of a wide spectrum of memory components and storage modules, Infineon offers the pertinent products for density and speed-intensive applications from its wide range of modules. In addition there is a trend towards smaller sized modules – since applications are becoming more transportable and, thus, smaller as well.

High-density modules

Smaller-sized modules

FBGA-based DIMMs as planar design,

SO-DIMMs

e.g. DDR2 2 GB registered /

Module size required for notebooks

1 GB SO-DIMM

MicroDIMMs

Stacked-die FBGA technology for

Small SO-DIMMs for sub-notebooks

high-end applications,

1U Registered DIMMs

e.g. DDR2 4 GB registered DIMM

Reduced-height registered DIMMs for blade servers

High-speed modules DDR: PC2700/3200 DDR2: PC2 3200/4200/5300 DDR2: Fully Buffered DIMM PC2 4200 and above

4

Mini-DIMMs Small registered DIMMs for blade servers, workstations, and routers

Pr o d u c t Tr e n d s

Expected I/O transition 1

DDR2

0.8

DDR

0.6

SDRAM

0.4 0.2 0

Q1 /04

Q 2/04 Q3 /04 Q 4 /04 Q1 /05

Q 2/05 Q3 /05 Q 4 /05

(Source: Infineon Technologies)

DDR mainstream in 2004 Applications

Modules

Typical products

Desktops

Unbuffered DIMMs

DDR400

Servers, workstations

Registered DIMMs ECC unbuffered DIMMs

DDR333 DDR400

Notebooks

SO-DIMMs

DDR400 DDR333

Applications

Modules

Typical products

Desktops

Unbuffered DIMMs

DDR2-533

Servers, workstations

Registered DIMMs ECC unbuffered DIMMs

DDR2-400 DDR2-533

Notebooks

SO-DIMMs MicroDIMMs

DDR2-400/533

DDR mainstream in 2005

Bandwidth roadmap 20 Single channel DIMM

Channel bandwidth [GBps]

10 DDR3 1333

8

DDR3 1600

DDR3 1066

6

DDR2/3 800 DDR2 667

4 DDR2 533

2

1 0.8 0

PC 133

DDR 200

1999

2000

DDR 266

DDR 333

DDR 400

PC 100

1998

2001

2002

2003

2004

2005

Year of market introduction

2006

2007

2008

2009

(Source: Infineon Technologies)

5

DDR2 T H E N E X T G E N E R A T I O N of synchronous DRAMs is called DDR2 and is a natural extension of the existing DDR standard. DDR2 has been introduced at operation frequencies of 200 MHz (DDR2-400) and will be extended to 266 MHz (DDR2-533), 333 MHz (DDR2-667) for main memory, and even 400 MHz (DDR2-800) for special applications. DRAM densities start at the 512 Mbit level as the main volume, followed by 256 Mbit and 1 Gbit for high-end server applications. This DRAM architecture change enables twice the bandwidth without increasing the demand on a new DRAM core while keeping power low. Key drivers for the technology switch to DDR2 are the demand for higher speeds and for DDR2 being an open standard. Infineon recently introduced the first DDR2 chips with 512 Mb capacity and is well positioned to supply the rapidly growing market with cost-efficient products based on a qualified 110 nm process. DDR2 module, 2 GB, 512 Mbit based, FBGA package

6

Key benefits of DDR2 are the higher bandwidths, lower power consumption, and the better system margins at higher speeds in servers. Power supply F O L L O W I N G T H E I N D U S T R I A L trend the DDR2-DRAM supply voltage has been reduced from 2.5 V to 1.8 V for core and data in/outputs. Power-Down D D R 2 A D D S M O R E power-saving options. When no read or write access is in progress with a row open, the DRAM can be brought into Active Power-Down Mode. In addition to the standard Active Power-Down Mode, already available on DDR components, a new “Low Power Active Power-Down Mode” can be activated by the Mode Register for additional power savings. ODT – On-Die Termination O N D D R - B A S E D S Y S T E M S the termination of the signal lines is done externally on the motherboard. DDR2 offers the option of terminating signals in the DRAM itself, by adding one additional input pin to turn termination on or off. This feature drastically reduces wave reflections and enhances overall system margins. A “strong” or “weak” termination – depending on the application requirements – can be programmed within the Extended Mode Register. Data strobes D D R 2 O F F E R S T H E O P T I O N for differential data strobing to enhance signal margins. There is even the option to have different data strobes for reads and writes. All these new features can be selected by programming the Extended Mode Register during power-on. Package A L L D D R 2 P R O D U C T S are produced in FBGA packages.

7

DDR2 SO-DIMM, 1 Gbit, 512 Mbit based, FBGA package

DDR2 Unbuffered DIMM Density

Density

Infineon offers unbuffered modules with densities of 256 MB, 512 MB, 1 GB, and 2 GB. Speed The modules are available in the

Unbuffered DIMM

2 GB 1 GB

Unbuffered DIMM

512 MB

Unbuffered DIMM

256 MB

Unbuffered DIMM

speeds PC2-3200 and PC2-4200, 2004

followed by PC2-5300.

2005

Registered DIMM Density

Density

Infineon offers registered modules with densities of 256 MB, 512 MB,

FBD

4 GB

Registered DIMM

1 GB, 2 GB, and 4 GB. 2 GB

FBD Registered DIMM

Speed The standard modules are available

1 GB

FBD Registered DIMM

in the speeds PC2-3200. FBD

512 MB Registered DIMM Registered DIMM

256 MB

2004

2005

Fully Buffered DIMM (FBDIMM) W I T H T H E E V E R - I N C R E A S I N G operation frequency the number of DIMM modules on a memory channel with the current parallel stub-bus interface has hit saturation point. For server applications where lots of DRAM components are required, a new solution replacing the registered DIMM modules for data rates of 533 Mbits/s and above becomes necessary.

8

FBDIMM requires high-speed chip design and DRAM expertise

Transitions the memory channel to a serial interface

New memory interconnect technology standard for high-end

Replaces the on-DIMM PLL and registers

memory connections

Specification under development by JEDEC

SO-DIMM Density Infineon offers SO-DIMM modules

Density SO-DIMM

2 GB

with densities of 256 MB, 512 MB, 1 GB, and 2 GB.

SO-DIMM

1 GB 512 MB

SO-DIMM

256 MB

SO-DIMM

Speed The modules are available in the speeds PC2-3200, PC2-4200,

2004

2005

and PC2-5300.

MicroDIMM Density

Density

Infineon plans to offer MicroDIMM modules with densities of 256 MB, 512 MB, and 1 GB.

MicroDIMM

1 GB 512 MB

MicroDIMM

256 MB

MicroDIMM

Speed The modules are available in the

2004

2005

speeds PC2-3200 and PC2-4200.

More detailed information on www.infineon.com/memory

New Modules with DDR2 Mini-DIMMs for DDR2 (244-pin)

Ultra-high density DIMMs for DDR2

Small form factor registered DIMMs.

Infineon plans to offer 4 GB registered DIMM as tall versions.

Typically used in

Typically used in

Blade servers

High-end server

Mobile workstations

Storage applications

Routers

9

DDR D D R S D R A M S (synchronous DRAMs) increase speed by

Module Highlights

reading data on both the rising edge and the falling edge of the clock pulse, essentially doubling the peak data bandwidth without increasing

DDR high-density DIMMs

clock frequency. DDR’s low latencies and high bandwidth make it interesting

– 2 GB registered DIMM

for the customer.

– 1 GB SO-DIMM DDR high-speed DIMMs

T O M E E T T H E M A R K E T needs, Infineon offers a wide range of DDR DIMMs.

– DDR400 available in unbuffered, registered, and SO-DIMM version FBGA package

Key benefits Compact structure High performance Low power consumption Package TSOP and FBGA packages are provided. DDR module, 2 GB, 512 Mbit based, FBGA package

10

– DDR333 registered DIMMs -1 GB – DDR333 SO-DIMMs -512 MB, -1 GB

Unbuffered DIMM Density Infineon offers unbuffered modules

Density Unbuffered DIMM

1 GB

with densities of 128 MB, 256 MB, 512 MB, and 1 GB.

512 MB

Unbuffered DIMM

256 MB

Unbuffered DIMM

128 MB

Unbuffered DIMM

Speed The modules are available in the speeds PC 2700 and PC 3200.

2004

2005

Registered DIMM Density

Density Infineon offers registered modules with densities of 256 MB, 512 MB,

2 GB

FBGA package TSOP package

1 GB, and 2 GB. 1 GB

Speed

FBGA package TSOP package

The modules are available in the speeds PC 2100, PC 2700,

512 MB

FBGA package TSOP package

and PC 3200. 256 MB

128 MB

FBGA package TSOP package

TSOP package

2004

2005

SO-DIMM Density Infineon offers SO-DIMM modules

Density SO-DIMM

1 GB

with densities of 128 MB, 256 MB, 512 MB, and 1 GB. Speed

512 MB

SO-DIMM

256 MB

SO-DIMM

128 MB

SO-DIMM

The modules are available in the speeds PC 2700 and PC 3200.

2004

2005

More detailed information on www.infineon.com/memory

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Chip-Size Package FBGA Based Modules

I N F I N E O N H A S D E V E L O P E D an inhouse technology for CSP. Its name is FBGA – BSP (Fine-pitch Ball Grid Array – Backside Protection) in BOC (Board on Chip) technology. Traditional wire bonding is used for the electrical connection. The BSP prevents a bare silicon backside which enables easier handling and better protection. The rigid substrate, together with BSP, allows package sizes to be clustered. As a result, die shrinks do not necessarily need a smaller package, and dies can be smaller than the ball-out – an important feature due to standardized ball-out.

This technology is being applied to the following modules: 512 MB SDR SO-DIMMs 256 MB – 1 GB DDR registered, reduced-height DIMMs 512 MB – 1 GB DDR SO-DIMMs All DDR2 modules

C O M P A R E D T O T O D A Y ’ S T S O P package type, which is standard for SDR and DDR DRAMs, the new package type offers superior electrical and thermal performance, and also lower package volume and weight. The lower electrical parasitic values allow for faster memory speed which is a prerequisite for e.g. DDR2. Infineon’s inhouse FBGA technology fully supports DDR2 requirements. For SDRAM, DDR, and DDR2 Infineon uses chip-size packages to achieve high-density modules. In addition, the small form factor of the chip-size packages supports the miniaturization of handhelds.

FBGA: Roadmap packages:

DDR2

FBGA

TSOP:

FBGA DDR

TSOP

2004

2005

Footprint reduction: 256 M FBGA compared to TSOP Space reduced more than 63% Double density on same form factor 12

TSOP

FBGA

Stacked Die FBGA High Performance Memory

T O A C H I E V E T H E H I G H E S T M E M O R Y density per module,

Advantages

Infineon has developed a dual-die FBGA. This technology provides two

Same interconnect technology of

identical memory dies inside one FBGA. Technology and design guarantee

upper and lower chip

high electrical and thermal performance of device and module, due to nearly

Therefore both chips will have

identical characteristics of the interconnect technology for both chips. The

similar electrical parameters

resulting package height is less than 1.35 mm and fits all DIMM height

Package thickness of 1.35 mm

standards. The package ballout (or pinout) is fully compatible to the

max. fits to all DIMM height

standards defined in JEDEC. Thanks to Infineon’s small chip sizes, the

standards, covers even SO-DIMM

dual-die chip-size package has a very competing footprint, just a bit wider than the regular single-die package.

The following modules are built up on this technology: DDR2 SD-FBGA ballout for 512 M / 1 G

2 GB DDR2 SO-DIMMs A

4 GB DDR2 registered DIMMs

Schematic view of stacked die: Substrate Upper chip

Lower chip

NC

NC

1

2

3

VDD

NU/ /RDQS

VSS

NC

4

E

A

F

B

DQ6

VSSQ

DM/ RDQS

G

C

VDDQ

DQ1

VDDQ

H

D

DQ4

VSSQ

J

E

VDDL

VREF

K

F

5

3 depop rows

6

NC

7

8

9

VSSQ

/DQS

VDDQ

DQS

VSSQ

DQ7

VDDQ

DQ0

VDDQ

DQ3

DQ2

VSSQ

DQ5

VSS

VSSDL

CK

VDD

CKE0

/WE

/RAS

/CK

ODT0 /CS1

L

G

BA2

BA0

BA1

/CAS

/CSo

M

H

CKE1

A10

A1

A2

A0

VDD

N

J

VSS

A3

A5

A6

A4

ODT1

P

K

A7

A9

A11

A8

VSS

R

L

VDD

A12

A14

A15

A13

NC

NC

W

NC

NC

Ballout for 1 G Ball pitch: 0.8 x 0.8 mm

Solder balls

Ballout for 512 M

Chip select – chip 1 I N S U M M A R Y , this innovative form of stacking provides unprecedented

Chip select – chip 2

memory density per board area, and offers at the same time superior electrical

Common balls for both chips

and thermal properties of the resulting memory component.

Support balls 13

GREEN Memory Products

Playing a pioneering role in setting new standards

Modules

Eliminating lead in packages

LEAD-FREE MODULES

Reducing harmful substances

based on “green” 256 Mb DDR

Simplifying recycling

components are already available; DDR modules with higher-density

I N F I N E O N W A S O N E of the first semiconductor manufacturers in

components (512 M) will follow.

the world to announce the availability of “green” DRAM components. Infineon

DDR2 modules only with green

is currently pursuing a two-step strategy to introduce products with lower

available.

environmental impact. In step one, lead and halogens (components) and lead (PCBs) have been eliminated in 2003. In step two, halogens (PCBs) will also be substituted in 2005. Levels of other potentially hazardous chemical substances such as cadmium, hexavalent chrome, antimony oxide, etc., will also be dramatically reduced. Components T H E M A J O R I T Y O F I N F I N E O N memory components based on the 110 nm process are lead-free and halogen-free. TSOP packaged DDR (256 M / 512 M) components FBGA packaged DDR available on request FBGA packaged DDR2 available

January 2003

January 2004

January 2005

Development Qualification package / product PCN (product change notification to market) Production

Infineon schedule for Green transition

14

More Detailed Information on Memory Products is Available: On our Internet websites: www.infineon.com/memory C

Datasheets Simulation models C Memory Spectrum (PDF version) C Brochures (PDF version) C

Edition 2004 June Published by Infineon Technologies AG, St.-Martin-Straße 53, D-81669 München © Infineon Technologies AG 2004. All Rights Reserved.

Please note The information in this document is subject to change without notice. The information herein describes certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide. (www.infineon.com).

Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies components may only be used in life-support devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life-support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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Z&P 2003171

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