DFT Questions

February 22, 2019 | Author: Shobhit Mahawar | Category: Input/Output, Electronic Circuits, Computer Engineering, Technology, Electronic Engineering
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1] What is MBIST & its need?

BIST is a structured DFT technique that places a device’s testing function within the device itself. BIST structures can test various types of circuitry, from random logic to regular structures such as memory devices. As deep submicron ASIC and IC technology evolves, these devices contain greater numbers of embedded memories. Consequently, the industry requires an automated test strategy for these memories. Classic DFT and ATPG approaches can neither support memory test nor provide a complete solution to the challenges of systems-on-silicon. The types of faults that occur in memory structures differ from those in standard logic design. Memory based address faults, stuck-at faults, transition faults, and coupling faults within the cell array require different fault models and algorithms than those supported by scan techniques. By building self-test logic into the design itself, MBIST provides a solution to many of these test problems. MBIST creates an on-chip BIST structure that generates and applies patterns and compares chip responses. Self-testing provides a number of benefits. First, placing the test circuitry on the chip reduces external tester time and expense. Second, it minimizes the difficulty of testing embedded circuitry by providing system-level control signals that run, and report the status of, the test operation. Third, the on-chip circuitry generates the test stimulus, thus eliminating or reducing expensive test pattern generation time. This, in turn, eliminates or reduces the amount of required external test data storage. Also, the silicon area overhead for the BIST structure is relatively small compared to the size of these deep submicron devices. 2] Types of memories? 1) SRAM 2) ROM 3) DRAM 4) EEPROM 3] How do you group the memories? We group memories according to1) Size of the memory 2) Frequency of the memory

4] How do you decide the number of controllers?

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Numbers of controllers depends on the how many memories is in the given logic, if there is more than one memory we have to check the size of both memory is same or not. 1) If there is only one memory we use only one controller for them. 2) If there is more than one memory we check the sizes of memory, if the sizes of both memory are same we can use a single controller for them (parallel testing). If the sizes of both memories are different, it depends on designer to place a single or different controller for both memories. 3) Example  –  suppose one memory depth is 10 and other memory depth is 100, we can use one controller for both memories, that controller generate 100 pattern (for checking max memory depth) and run for both memories, but for first memory [10 depth] 90 pattern is useless, which is a wastage of money and time. So for betterment we use two controllers- one generate 10 patterns and other 100 patterns for both 10 and 100 depth memories respectively. 4) Routing issue- suppose system has two memories both are of same size, but both are far from each other , we can’t use same controller for them because it creates routing problem, so in this case we use separate controller for them. 5) Frequency –  if the memories are of same size but working on different frequencies for that we need separate controllers.

5] MBIST hook-up with Memory, Collar logic and Functional logic

6] How does the controller work? Explain with diagram?

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To test for memory-specific faults, memory BIST implements a finite state machine that implements algorithms to generate stimulus to test the memory. This is referred to as the BIST controller and typically contains a comparator that compares the memory’s actual response with the known good circuit response. The BIST controller supplies two output signals to inform the system of the test process status: a test completes (tst_done) signal and a pass/fail (fail_h) flag. The tst_done signal is asserted when testing has finished. The fail_h flag is asserted, and remains asserted for the remainder of the test, if the test process found any system failures. MBIST provides the ability to add this diagnostic functionality to the BIST controller so that the failing data is scanned out of the device on every miscompare, with a minimal impact on silicon area and routing overhead. The architecture generated by MBIST diagnostic capability includes the use of the BIST controller’s hold capability (hold_l) as well as generating an additional input port (debugz) and output port (scan_out). BIST Controller Inputs This section describes each of the BIST controller inputs and their functions. -System addresses (sys_addr)  — The system address inputs to the memory array. -System data inputs (sys_di)  — The system data inputs to the memory array. -System write enables (sys_wen)  — The system write enables that control memory read/write operations. -Reset (rst_l) — An active-low signal that resets the finite state machine. -Clock (clk) — The clock for the finite BIST controller. -Hold (hold_l)  —  An optional active-low signal that forces the BIST controller to stop processing and maintain its current state. -Test (test_h)  — An active-high signal that enables the BIST controller. When test_h is high, self-test is in progress. -Diagnostic Mode (debugz)  —  (Debug only) The diagnostic mode enable signal. When debugz is low, the BIST controller performs the default memory tests. When debugz is high, the diagnostic mode is enabled. Works with hold_l and scan_out. BIST Controller Outputs This section describes each of the BIST controller outputs and their functions. -Write enable (wen)  — The output that drives the write enable of the memory(s) under test. Other available control signals include output enable, read enable, chip enable, and clock. -Test Done (tst_done)  — When high, indicates completion of the self-test operation. -Fail (fail_h)  — The pass/fail flag for the BIST controller. -Data Outputs (DI_n)  — The memory data inputs. -Address Outputs (AO_n)  — The memory input addresses. -Scan Output (scan_out)  —  (Debug only) The scan output port for diagnosing serially scanned out failing data. Works with hold_l and debugz. 3

7] Understanding different Memory Faults and Algorithms to cover them? Memories fail in a number of different ways. The three main parts, address decode logic, memory cell array, and read/write logic, can each have flaws that cause the device to fail. Memory testing, while similar to random logic testing, focuses on testing for these memoryspecific failures. The basic types of memory faults include stuck-at, transition, coupling, and Neighbourhood pattern sensitive. Stuck-at Faults A memory fails if one of its control signals or memory cells remains stuck at a particular value. Stuck-at faults model this behaviour, where a signal or cell appears to be tied to power (stuck-at-1) or ground (stuck-at-0). To detect stuck-at faults, you must place the value opposite to that of the stuck-at fault at the fault location. To detect all stuck-at-1 faults, you must place 0s at all fault locations. To detect all stuck-at-0 faults, you must place 1s at all fault locations. Transition Faults A memory fails if one of its control signals or memory cells cannot make the transition from either 0 to 1 or 1 to 0. Figure shows a cell that might behave normally when a test writes and then reads a 1. It may even transition properly from 1 to 0. However, when undergoing a 0->1 transition, the cell could remain at 0 — exhibiting stuck-at-0 behaviour from that point on. However, a stuck-at-0 test might not detect this fault if the cell was at 1 originally.

To detect all transition faults in the memory array, a test must write a 1, followed by a 0, and then read (detects up transition). The test must then write a 0, followed by a 1 and then read (detects down transition). Coupling Faults Memories also fail when a write operation in one cell influences the value in another cell. Coupling faults model this behavior. Coupling faults fall into several categories: inversion, idempotent, bridging, and state. Inversion coupling faults, commonly referred to as CFins, occur when one cell’s transition causes inversion of another cell’s value. For  example, a 0->1 transition in cell_n causes the value in cell_m to invert its state.

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Idempotent coupling faults, commonly referred to as CFids, occur when one cell’s transition forces a particular value onto another cell. For example, a 0->1 transition in cell_n causes the value of cell_m to change to 1 if the previous value was 0. However, if the previous value was 1, the cell remains a 1.

Bridge coupling faults (BFs) occur when a short, or bridge, exists between two or more cells or signals. In this case, a particular logic value triggers the faulty behavior, rather than a transition. State coupling faults, abbreviated as SCFs, occur when a certain state in one cell causes another specific state in another cell. For example, a 0 value in cell i causes a 1 value in cell j. Neighbourhood Pattern Sensitive Faults Another way in which memory cells can fail involves a write operation on a group of  surrounding cells that affects the values of one or more neighboring cells.

Memory BIST Algorithms There are memory test algorithms known to detect the majority of commonly occurring faults in memories. March C First presented at the ITC in 1982, the March C algorithm, and its modifications, is now the most popular algorithm for memory testing. This algorithm, which consists of 11 operations (11n), writes and reads words of 0s, followed by writing/reading words of 1s, in both descending and ascending address spaces Specifically, the algorithm consists of the following steps: 1. Write 0s to all locations starting at the lowest address (initialization). 5

2. Read 0 at lowest address, write 1 at lowest address, repeating this series of operations until reaching the highest address. 3. Read 1 at lowest address, write 0 at lowest address, repeating this series of operations until reaching the highest address. 4. Read 0 from the lowest address to the highest address. 5. Read 0 at highest address, write 1 at highest address, repeating this series of operations until reaching the lowest address. 6. Read 1 at highest address, write 0 at highest address, repeating this series of operations until reaching the lowest address. The March C Algorithm detects the following faults: stuck-at transition - unlinked idempotent and inversion, and other coupling faults on bit-oriented addresses

7) How do you corrupt the memories? What is memory diagnosis ?

The BIST controller supplies two output signals to inform the system of the test process status: a test complete (tst_done) signal and a pass/fail (fail_h) flag. The tst_done signal is asserted when testing has finished. The fail_h flag is asserted, and remains asserted for the remainder of the test, if the test process found any system failures. Although the indication of a failure is enough to indicate a faulty memory and ensure that the part is rejected, it is often necessary to diagnose the failures to identify the cause of the 6

failures. In this case, data is needed to indicate exactly which patterns caused the miscompare along with the functionality to diagnose the data to identify the faults present in the memories. MBISTArchitect provides the ability to add this diagnostic functionality to the BIST controller so that the failing data is scanned out of the device on every miscompare, with a minimal impact on silicon area and routing overhead. The architecture generated by MBISTArchitect’s diagnostic capability includes the use of the BIST controller’s hold capability (hold_l) as well as generating an additional input port (debugz) and output port (scan_out). By default, MBIST Architect will indicate a failure to ensure that the part is rejected, however, it is often necessary to diagnose the failures to identify the cause of the failures. In this case, data is needed to indicate exactly which patterns caused the miscompare, and this data can be processed to identify the faults present in the memories. In order to extract the failing data, the BIST controller requires the controller’s hold capability as well as additional functionality to download the failing data on every occurrence of a miscompare. MBISTArchitect provides the ability to add this functionality to the BIST controller so that the failing data is scanned out of the device on every miscompare, with a minimal impact on silicon area and routing overhead. When the debug diagnostics is used, the BIST controller operates in one of two modes controlled by debugz. The modes and operation of the fail_h and scan_out ports is as follows:  —  (Debug only) The diagnostic mode enable signal. When debugz is low, the BIST controller performs the default memory tests. When debugz is high, the diagnostic mode is enabled. Works with hold_l and scan_out.

When debugz is set to ‘0’, the B IST controller performs the default test. In this mode, the scan_out port is set to ‘0’, as no fail data is downloaded. The fail_h port is asserted on the first failure and remains high for the remainder of the test.

When debugz is set to ‘1’, the diagnostic mode is enabled. In this mode, a miscompare will suspend the operation of the BIST controller, and the failing data will be serially scanned out of the controller through scan_out .Once the failing data has been scanned out, the BIST controller will resume the test. The scan out operation will repeat on every occurrence of a miscompare. 8) Diff between RAM & ROM BIST

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RAM fail in a number of different ways. The three main parts, address decode Logic, memory cell array, and read/write logic. While BIST for Ram will write, read, compare or compress the read data, in RAM we don’t know what data will be inside the memory cell, what maybe the address, we generate the test patterns and apply to the memory under test then compare the output result with the result of  a known good memory. For rest information check answer no.6. The MBIST for ROM will only read and compress the read data into a signature [MISR]. The signature for ROM is precalculated using the data stored in the ROM.

9) What is area overhead because of MBIST

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Obviously area increases because for MBIST we have to add controller logic,which is made up of different gates, sometimes we add compressor logic too which occupy more area.

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