Datasheet k4101

2SK4101FS

Ordering number : ENA1366

SANYO Semiconductors

DATA SHEET N-Channel Silicon MOSFET

2SK4101FS

General-Purpose Switching Device Applications

Features • • • •

Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.

Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)

Symbol

Conditions

Ratings

VDSS VGSS IDc *1

Unit 650

Limited only by maximum temperature Tch=150°C

V

±30

V

7

A A

IDpack *2

Tc=25°C (SANYO’s ideal heat dissipation condition)*3

6.4

IDP

PW≤10μs, duty cycle≤1%

28

A

2.0

W

Allowable Power Dissipation

PD

35

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *4

EAS IAV

194

mJ

Avalanche Current *5

Tc=25°C (SANYO’s ideal heat dissipation condition)*3

6

A

Note : *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6A *5 L≤10mH, Single pulse Marking : K4101

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.

www.semiconductor-sanyo.com/network N2608QB MS IM TC-00001728 No. A1366-1/5

2SK4101FS Electrical Characteristics at Ta=25°C Parameter

Symbol

Drain-to-Source Breakdown Voltage

Conditions

V(BR)DSS IDSS

ID=10mA, VGS=0V VDS=520V, VGS=0V VGS=±30V, VDS=0V

Forward Transfer Admittance

IGSS VGS(off) | yfs |

Static Drain-to-Source On-State Resistance Input Capacitance

Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage

Ratings min

typ

Unit

max

650

V 100

μA

±100

nA

VDS=10V, ID=1mA

3

5

2.3

RDS(on)

VDS=10V, ID=3.5A ID=3.5A, VGS=10V

Ciss

VDS=30V, f=1MHz

750

pF

Output Capacitance

Coss

VDS=30V, f=1MHz

136

pF

Reverse Transfer Capacitance

Crss

VDS=30V, f=1MHz

28

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

21

ns

Rise Time

tr

See specified Test Circuit.

40

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit.

89

ns

Fall Time

tf

See specified Test Circuit.

31

ns

Total Gate Charge

Qg

VDS=200V, VGS=10V, ID=7A

28.5

nC

Gate-to-Source Charge

Qgs

5.2

nC

0.9

4.6 0.85

Gate-to-Drain “Miller” Charge

Qgd

VDS=200V, VGS=10V, ID=7A VDS=200V, VGS=10V, ID=7A

Diode Forward Voltage

VSD

IS=7A, VGS=0V

V S

1.1

16

Ω

nC 1.2

V

Package Dimensions unit : mm (typ) 7528-001 4.7

10.16 3.18

3.23

15.8

15.87

6.68

3.3

2.54

12.98

2.76 1.47 MAX 0.8 1

2

3

0.5

2.54

2.54

1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS

Switching Time Test Circuit 10V 0V

VDD=200V

VIN

L ID=3.5A RL=57Ω

P.G

≥50Ω RG VOUT

VIN PW=10μs D.C.≤0.5%

Avalanche Resistance Test Circuit

D 10V 0V

G

RGS=50Ω

S

2SK4101FS 50Ω

VDD

2SK4101FS

No. A1366-2/5

2SK4101FS ID -- VDS

25

ID -- VGS

25

Tc=25°C 20

10V 15V

Drain Current, ID -- A

Drain Current, ID -- A

20

VDS=20V

8V

15

10

5

Tc= --25°C 25°C

15

75°C 10

5

6V VGS=5V

0

0

5

10

15

20

25

Drain-to-Source Voltage, VDS -- V

0

2

4

6

8

10

12

14

16

18

Gate-to-Source Voltage, VGS -- V

IT12216

RDS(on) -- VGS

3.0

0

30

RDS(on) -- Tc

3.0

20

IT12217

2.5

2.0

Tc=75°C

25°C --25°C

5.5

6.0

6.5

7.0

7.5

8.0

8.5

9.0

9.5

Gate-to-Source Voltage, VGS -- V

Tc

C 75°

3 2 1.0 7 5

0

--25

2

3

5

7 1.0

2

3

5

7 10

2

Drain Current, ID -- A

50

75

100

125

150

IT12219

VGS=0V

3 2 1.0 7 5 3 2 0.1 7 5

3

0.01 0.2

5

0.6

0.8

1.0

1.2

Ciss, Coss, Crss -- VDS

5

VDD=200V VGS=10V

5

0.4

Diode Forward Voltage, VSD -- V

IT12220

SW Time -- ID

7

25

IS -- VSD

3 2

3 2 0.1

0.5

10 7 5

C 25° = --

5

1.0

3 2

Source Current, IS -- A

Forward Transfer Admittance, | yfs | -- S

7

V

Case Temperature, Tc -- °C

°C 25

10

A,

.5 =3 ID

0 --50

10

VDS=20V

2

1.5

IT12218

| yfs | -- ID

3

0V

=1 GS

--25°C

0.5

2.0

25°C

1.0

2.5

Tc=75 °C

1.5

0 5.0

1.4 IT12221

f=1MHz

3 2

3

Ciss, Coss, Crss -- pF

Switching Time, SW Time -- ns

Static Drain-to-Source On-State Resistance, RDS(on) -- Ω

Static Drain-to-Source On-State Resistance, RDS(on) -- Ω

ID=3.5A

2

td (off )

100 7

tr

5 3

tf

td(on)

2

1000 7 5

Ciss

3 2

Coss

100 7 5

Crss

3 2

10 0.1

2

3

5

7 1.0

2

3

5

Drain Current, ID -- A

7

10

2

3

IT12222

10

0

10

20

30

40

Drain-to-Source Voltage, VDS -- V

50 IT12223

No. A1366-3/5

2SK4101FS VGS -- Qg

10

8

Drain Current, ID -- A

Gate-to-Source Voltage, VGS -- V

9

7 6 5 4 3

2 1 0

0

10

20

1.0

0.5

0

0

20

40

60

80

100

120

140

Ambient Temperature, Ta -- °C

Avalanche Energy derating factor -- %

160

IT12226

EAS -- Ta

120

0.1 7 5 3 2

*1. Shows chip capability *2. SANYO's ideal heat dissipation condition

Tc=25°C Single pulse 2 3

5 7 1.0

2 3

5 7 10

2 3

5 7 100

2 3

Drain-to-Source Voltage, VDS -- V

Allowable Power Dissipation, PD -- W

Allowable Power Dissipation, PD -- W

1.5

μs

0μ s

Operation in this area is limited by RDS(on).

PD -- Tc

40

2.0

1 10 ms m 10 s 0m DC s op er ati on

IDpack(*2)=6.4A

1.0 7 5 3 2

10 10

IDc(*1)=7A

10 7 5 3 2

IT12224

PD -- Ta

PW≤10μs

IDP=28A

0.01 0.1

30

Total Gate Charge, Qg -- nC 2.5

ASO

7 5 3 2

VDS=200V ID=7A

5 71000 IT14235

35 30 25 20 15 10 5 0

0

20

40

60

80

100

120

Case Temperature, Tc -- °C

140

160

IT12227

100

80

60

40

20

0

0

25

50

75

100

125

Ambient Temperature, Ta -- °C

150

175 IT10478

No. A1366-4/5

2SK4101FS

Note on usage : Since the 2SK4101FS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.

This catalog provides information as of November, 2008. Specifications and information herein are subject to change without notice. PS No. A1366-5/5