Datasheet k4101
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Description
2SK4101FS
Ordering number : ENA1366
SANYO Semiconductors
DATA SHEET N-Channel Silicon MOSFET
2SK4101FS
General-Purpose Switching Device Applications
Features • • • •
Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee.
Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
Symbol
Conditions
Ratings
VDSS VGSS IDc *1
Unit 650
Limited only by maximum temperature Tch=150°C
V
±30
V
7
A A
IDpack *2
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
6.4
IDP
PW≤10μs, duty cycle≤1%
28
A
2.0
W
Allowable Power Dissipation
PD
35
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS IAV
194
mJ
Avalanche Current *5
Tc=25°C (SANYO’s ideal heat dissipation condition)*3
6
A
Note : *1 Shows chip capability. *2 Package limited. *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6A *5 L≤10mH, Single pulse Marking : K4101
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment.
www.semiconductor-sanyo.com/network N2608QB MS IM TC-00001728 No. A1366-1/5
2SK4101FS Electrical Characteristics at Ta=25°C Parameter
Symbol
Drain-to-Source Breakdown Voltage
Conditions
V(BR)DSS IDSS
ID=10mA, VGS=0V VDS=520V, VGS=0V VGS=±30V, VDS=0V
Forward Transfer Admittance
IGSS VGS(off) | yfs |
Static Drain-to-Source On-State Resistance Input Capacitance
Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage
Ratings min
typ
Unit
max
650
V 100
μA
±100
nA
VDS=10V, ID=1mA
3
5
2.3
RDS(on)
VDS=10V, ID=3.5A ID=3.5A, VGS=10V
Ciss
VDS=30V, f=1MHz
750
pF
Output Capacitance
Coss
VDS=30V, f=1MHz
136
pF
Reverse Transfer Capacitance
Crss
VDS=30V, f=1MHz
28
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
21
ns
Rise Time
tr
See specified Test Circuit.
40
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
89
ns
Fall Time
tf
See specified Test Circuit.
31
ns
Total Gate Charge
Qg
VDS=200V, VGS=10V, ID=7A
28.5
nC
Gate-to-Source Charge
Qgs
5.2
nC
0.9
4.6 0.85
Gate-to-Drain “Miller” Charge
Qgd
VDS=200V, VGS=10V, ID=7A VDS=200V, VGS=10V, ID=7A
Diode Forward Voltage
VSD
IS=7A, VGS=0V
V S
1.1
16
Ω
nC 1.2
V
Package Dimensions unit : mm (typ) 7528-001 4.7
10.16 3.18
3.23
15.8
15.87
6.68
3.3
2.54
12.98
2.76 1.47 MAX 0.8 1
2
3
0.5
2.54
2.54
1 : Gate 2 : Drain 3 : Source SANYO : TO-220F-3FS
Switching Time Test Circuit 10V 0V
VDD=200V
VIN
L ID=3.5A RL=57Ω
P.G
≥50Ω RG VOUT
VIN PW=10μs D.C.≤0.5%
Avalanche Resistance Test Circuit
D 10V 0V
G
RGS=50Ω
S
2SK4101FS 50Ω
VDD
2SK4101FS
No. A1366-2/5
2SK4101FS ID -- VDS
25
ID -- VGS
25
Tc=25°C 20
10V 15V
Drain Current, ID -- A
Drain Current, ID -- A
20
VDS=20V
8V
15
10
5
Tc= --25°C 25°C
15
75°C 10
5
6V VGS=5V
0
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
0
2
4
6
8
10
12
14
16
18
Gate-to-Source Voltage, VGS -- V
IT12216
RDS(on) -- VGS
3.0
0
30
RDS(on) -- Tc
3.0
20
IT12217
2.5
2.0
Tc=75°C
25°C --25°C
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
Gate-to-Source Voltage, VGS -- V
Tc
C 75°
3 2 1.0 7 5
0
--25
2
3
5
7 1.0
2
3
5
7 10
2
Drain Current, ID -- A
50
75
100
125
150
IT12219
VGS=0V
3 2 1.0 7 5 3 2 0.1 7 5
3
0.01 0.2
5
0.6
0.8
1.0
1.2
Ciss, Coss, Crss -- VDS
5
VDD=200V VGS=10V
5
0.4
Diode Forward Voltage, VSD -- V
IT12220
SW Time -- ID
7
25
IS -- VSD
3 2
3 2 0.1
0.5
10 7 5
C 25° = --
5
1.0
3 2
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
7
V
Case Temperature, Tc -- °C
°C 25
10
A,
.5 =3 ID
0 --50
10
VDS=20V
2
1.5
IT12218
| yfs | -- ID
3
0V
=1 GS
--25°C
0.5
2.0
25°C
1.0
2.5
Tc=75 °C
1.5
0 5.0
1.4 IT12221
f=1MHz
3 2
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source On-State Resistance, RDS(on) -- Ω
ID=3.5A
2
td (off )
100 7
tr
5 3
tf
td(on)
2
1000 7 5
Ciss
3 2
Coss
100 7 5
Crss
3 2
10 0.1
2
3
5
7 1.0
2
3
5
Drain Current, ID -- A
7
10
2
3
IT12222
10
0
10
20
30
40
Drain-to-Source Voltage, VDS -- V
50 IT12223
No. A1366-3/5
2SK4101FS VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7 6 5 4 3
2 1 0
0
10
20
1.0
0.5
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
160
IT12226
EAS -- Ta
120
0.1 7 5 3 2
*1. Shows chip capability *2. SANYO's ideal heat dissipation condition
Tc=25°C Single pulse 2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.5
μs
0μ s
Operation in this area is limited by RDS(on).
PD -- Tc
40
2.0
1 10 ms m 10 s 0m DC s op er ati on
IDpack(*2)=6.4A
1.0 7 5 3 2
10 10
IDc(*1)=7A
10 7 5 3 2
IT12224
PD -- Ta
PW≤10μs
IDP=28A
0.01 0.1
30
Total Gate Charge, Qg -- nC 2.5
ASO
7 5 3 2
VDS=200V ID=7A
5 71000 IT14235
35 30 25 20 15 10 5 0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT12227
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175 IT10478
No. A1366-4/5
2SK4101FS
Note on usage : Since the 2SK4101FS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of November, 2008. Specifications and information herein are subject to change without notice. PS No. A1366-5/5
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