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Automotive _Ele c tronic s_from_He r ma n_Ca sie r.ppt - slide pdf.c om
El ec t r o n i c C ir c u i ts i n an A u t o m o t iv e En v ir o n m en t Herman Casier AMI Semiconductor Belgium
[email protected]
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O u t l i n e 1
Introduction
Automotive Market and trends Characteristics of Electronics in a car Automotive Electronics Challenges
Cost and Time To Market
Quality and Safety
Quality requirements
Safety requirements DFMEA
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O ut l i ne 2
High Voltage : the car battery History of the car battery
Why switching over to 42V PowerNet Specifications of car-batteries Example: lamp-failure detector Example: high-side driver
High Temperature requirements
Temperature range specification Functionality and reliability limits Diode leakage currents Example: bandgap circuit Example: SC-circuit
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O ut l i ne 3
EMC general Definition of EMC
Compliance and pre-compliance tests EMC standards EMC standards in IC-design
EME – Electro Magnetic Emission
1W /150W test method EME what happens? EME how to cope with? Example: digital circuit current peaks Example: CANH differential output
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O ut l i ne 4
– Electro Magnetic Susceptibility EMS DPI – Direct Power Injection method
EMS compliance levels EMS what happens? EMS how to cope with? Example: rectification of single ended signal Example: rectification of differential signal Example: substrate currents in ESD diodes Types of substrate currents
Example: jumper detection
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O ut l i ne 5
Automotive transients (ISO-7637) (sometimes called Schaffner pulses)
Transient pulse definitions Transient pulses what happens? Example: supply & low-side driver Example: bandgap circuit
Acknowledgments
References
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Tr en d s i n au t o m o t i v e CAR Technology > 1891 mechanical system > 1920 + pneumatic systems + hydraulic systems > 1950 + electric systems
TRAFFIC
DRIVER SKILLS
very low
very high technical skills
low
increasing
good technical skills increasing driving skills
> 1980 + electronic systems congestion + optronic systems starts
low technical skills high driving skills
> 2010 + nanoelectronics congested + biotronic systems optimization starts
very low technical skills decreasing driving skills
> 2040 + robotics + nanotechnology
no technical skills no driving skills
maximal and optimized
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high technical skills low driving skills
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A u t o m o t i v e El ec t r o n i c s Phase 1: in Introduction Electronics non-criticalofapplications
Driver information and entertainment e.g. radio,
Comfort and convenience e.g. electric windows, wiper/washer, seat heating, central locking, interior light control …
Low intelligence electronic systems Minor communication between systems (pushbutton control) No impact on engine performance No impact on driving & driver skills 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment http://slide pdf.c om/re a de r/full/a utomotive e le c tronic sfromhe r ma nc a sie r ppt
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A u t o m o t i v e El ec t r o n i c s Phase 2: Electronics support critical applications Engine optimization: e.g. efficiency improvement & pollution control
Active and Passive Safety e.g. ABS, ESP, airbags, tire pressure, Xenon lamps …
Driver information and entertainment e.g. radio-CD-GPS, parking radar, service warnings …
Comfort, convenience and security: e.g. airco, cruise control, keyless entry, transponders …
Increasingly complex and intelligent electronic systems Communication between electronic systems within the car Full control of engine performance No control of driving & driver skills But reactive correction of driver errors. Electronics impact remains within the car 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment http://slide pdf.c om/re a de r/full/a utomotive e le c tronic sfromhe r ma nc a sie r ppt
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A u t o m o t i v e El ec t r o n i c s Phase 3: Electronics control critical applications
Full Engine control e.g. start/stop cycles, hybrid vehicles …
Active and Passive Safety e.g. X by wire, anti-collision radar, dead-angle radar …
Driver information and entertainment e.g. traffic congestion warning, weather and road conditions …
Comfort and convenience Very intelligent and robust electronics Communication between internal and external systems Information exchange with traffic network Full control of engine performance Control of driving and (decreasing) driving skills Proactive prevention of dangerous situations inside and around the car Full control of car and immediate surroundings
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A u t o m o t i v e El ec t r o n i c s st
Phase 4: Fully Automatic Driver (1 generation)
Traffic network takes control of the macro movements (upper layers) of the car Automatic Driver executes control of the car and immediate surroundings (lower and physical layers) A D A M : A u t o m a ti c Dr i v er fo r A u t o -M o b i l e or EVA : Elegan t Vehicle Au tom at
Driver has become the Passenger for the complete or at least for most of the journey Driver might still be necessary if A D A M b e c o m e s an A n a rc h i s t i c D r i v er A n d M ad m an o r E VA b e c o m e s a n E n r a g e d Ve h i c l e A n a r c h i s t 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment http://slide pdf.c om/re a de r/full/a utomotive e le c tronic sfromhe r ma nc a sie r ppt
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A u t o m o t i v e D r iv e r s
Safety (FMEA)
Increasing Complexity
level 1: remains “in-spec” in Harsh environment
more functions and more intelligence : makes the car system more transparant for the driver
Increasing Accuracy More, higher performance sensors : cheapest sensors require most performance
Low cost and Time-To-Market (of course)
Legislation
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Automotive IC’s
HBIMOS (2.0µm)
I2T (0.7µm)
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I3T (0.35µm) slide: 13 13/123
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Tec h n o l o g y Ev o l u t io n Feature size trendand versus year of market introduction for mainstream CMOS for 80-100V automotive technologies
Technology Node (µm) 10
BIMOS-7µm SBIMOS-3µm HBIMOS-2µm I2T-0.7µm
1.0
I3T-0.35µm
CMOS
0.1 1980
1990
2000
2010
Year of Market Introduction 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment http://slide pdf.c om/re a de r/full/a utomotive e le c tronic sfromhe r ma nc a sie r ppt
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Introduction Top automotive vehicle manufacturers (2000) (top 14 manufacturers account News for 87% of worldwide production) Source: Automotive Datacenter - 2001 BMW 1,7%
GM 14,2%
Others 13,5%
Mitsubishi 2,8% Ford 12,4%
Suzuki 3,0% Renault 4,1%
Toyota 9,9%
Honda 4,2%
VW group 8,6%
Hyundai 4,2% Nissan 4,4%
Fiat 4,6%
PSA group 4,7%
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DaimlerChrysler 7,8% slide: 15 15/123
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Introduction Automotive semiconductor consumption forecast
Automotive electronic equipment revenue forecast
25
100 90 Other Auto
80
20
Remote/Keyless Entry
70
Climate Control unit
60
Airbags
$ B
50
Dashboard Instr.
40
Auto Stereo
30
GPS ABS
20
Engine Control units
15 $ B
10
5
10
0
0 2003
2004
2005
2006
CAGR = 6.6% (2002 –2006)
2003 2004 2005 2006
CAGR = 13.2% (2002 –2006)
Source : Dataquest December 2002 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment http://slide pdf.c om/re a de r/full/a utomotive e le c tronic sfromhe r ma nc a sie r ppt
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Introduction Total semiconductor market (US$B) 300 Military/Aero (3%) CAGR=8% (2002-06)
250
Industrial (7%) CAGR=12% (2002-06) Automotive (8%) CAGR=13% (2002-06)
200 150
Consumer (17%) CAGR=15% (2002-06)
100
Communications (24%) CAGR=14% (2002-06)
50
Data Processing (41%) CAGR=12% (2002-06)
0 2001 2002 2003 2004 2005 2006 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment http://slide pdf.c om/re a de r/full/a utomotive e le c tronic sfromhe r ma nc a sie r ppt
Source : Dataquest November 2002 slide: 17 17/123
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Introduction Where do we find electronics in a car Compass Interior Light System Automated Auto toll Payment Cruise Control Rain sensor Entertainment Head Up Display
Power Window Sensor Stability Sensing
LED brake light
Dashboard controller Light failure control
Backup Sensing
Information Navigation Keyless entry Central locking
Engine: Injection control Injection monitor Oil Level Sensing Air Flow Throttle control Valve Control Headlight: Position control Power control Failure detection
Suspension control Key transponder Door module Seat control: Position/Heating Airbag Sensing &Control E-gas
Brake Pressure
Gearbox: Position control
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Introduction Electronics are distributed all over the car-body Distributed supply used for both power drivers and low power control systems direct
battery supply for the modules: highvoltage with large variation Trend: Battery voltage from 12V 42V
large
supply transients due to interferences of high-power users switching or error condition (load-dump) Trend: comparable supply transients, lower loaddump transient
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Introduction
Modules, distributed over the car-body have to comply with stringent EMC and ESD low
EME to other modules and external world
low
EMS (high EMI) for externally and internally
generated fields High ESD and system-ESD requirements Trend: increasing EMC frequency and EMC field strength for the module. Trend: increasing ESD voltages and power Trend: more integration brings the module border closer to the chip border : the chip has to comply with higher EMC field strengths and ESD power. 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment http://slide pdf.c om/re a de r/full/a utomotive e le c tronic sfromhe r ma nc a sie r ppt
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Introduction
Modules onsensors all locations in the car, close to controlled and actuators large
temperature range: - 40 … +150°C ambient
Trend: increasing ambient temperature
Critical car-functions controlled by electronics Safety
& reliability very important
Trend: increasing safety and reliability requirements Communication speed and
reliability
Trend: higher speed, lower/fixed latency, higher reliability and accident proof communications 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment http://slide pdf.c om/re a de r/full/a utomotive e le c tronic sfromhe r ma nc a sie r ppt
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Introduction
Many modules interface with cheap (large offset, low linearity) and low-power sensors High
accuracy and programmability of sensor interface: sensitivity, linearization, calibration … Trend: increasing sensor interface accuracy, speed and programmability with higher interference rejection and more intelligence
SOC-type semiconductors in module Lower
cost mandates single chip Trend: increasing intelligence requires state-ofthe-art technology with high-voltage (80V), higher temperature (175°C ambient) and higher interference rejection (EMC, ESD) capabilities
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A u t o m o t i v e El ec t r o n i c s C h a l len g es Quality & Safety
Cost & TTM
Automotive IC design
EMC & Automotive transients
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High Voltage High Temp.
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C o s t & Ti m e To M a r k e t
The automotive market is very cost driven : “Bill of Materials” and “Cost of Ownership” more important than component cost
Time To Market is quite long : start design to production is typically 2 … 3 yrs but Time To Market is in fact “Time to OEM qualification slot” which is not flexible
Prestudy, design, redesign : typ 12 … 18 month
Automotive IC qualification : typ 3 … 4 month OEM qualification : typ 6 … 12 month The start of the OEM qualification is a very hard deadline
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O utl i ne Quality & Safety
Cost & TTM
Automotive IC design
EMC & Automotive transients
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Q ual i ty and S afety
Required reliability ?
Most cars actually drive less than 10.000hrs over the cars lifespan of 10 … 15 years Most electronics also only functioning during 10.000hrs but some are powered for > 10years
High reliability requirements : 1ppm for production reasons (low infant mortality)
for safety reasons and long lifetime (failure rate).
Implications
Design : 6 sigma approach Test: high test coverage (digital and analog), test at different temperatures IDDQ, Vstress for early life-time failures Packaging : high reliability
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Q ual i ty and S afety
Safety requirements ?
If a problem affects the performance, the circuit/module functionality must remain safe (predictable behavior). Problems: circuit/system failure, EMC disturbance, car-crash (within limits) …
Non-vital functions may become inoperable until the problem disappears Vital parts must remain functional
Implications
Fault tolerant system set-up Worst Case Design including EMC disturbance DFMEA (Design Failure Mode and Effect Analysis)
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DFMEA What : Failure Mode and Effect Analysis is a disciplined analysis/method of identifying potential or known failure modes and providing follow-up and corrective actions before the first production run occurs. (D.H. Stamatis) Why : avoid the natural tendency to underestimate what can go wrong
FMEA extends from subcircuit to component to
system and assembly and to service, where each FMEA is an input for the next level. Design FMEA (DFMEA) concerns the component design level. 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment http://slide pdf.c om/re a de r/full/a utomotive e le c tronic sfromhe r ma nc a sie r ppt
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DFMEA
FMEA does include prototypes and samples because up not to that point, modifications are part of the development. It is good practice though to include DFMEA already in the prestudy for its large implications on the final circuit
In the automotive industry, a standardized form and procedure has been published by AIAG
The header is not standardized and contains design project references, the DFMEA versionthe control, team and the authorization signatures.
The second part includes the mandatory items
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DFMEA
Mandatory items for the DFMEA
Functional block
Identification number Circuit part and Design function e.g. input CLCK_in, Schmitt-trigger function
Actual state of the circuit (I)
Potential failure mode e.g. no hysteresis or hysteresis in one direction only Potential effect of failure e.g. oscillation of clock signal [S] Severity of the failure: rank 1 … 10 e.g. 8 : critical failure: product inoperable
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DFMEA
Mandatory items for the DFMEA (II)
Actual state of the circuit (II)
Potential cause of failure e.g. Metal 1 crack [O] likelihood of Occurrence of failure: rank 1 …10 e.g. 5 : medium number of failures likely Preventive and Detection methods e.g. digital test of input does not include hysteresis [D] likelihood of Detection of failure: rank 1 … 10 e.g. 7 : low effectiveness of actual detection method [RPN] Risk Priority Number: [RPN] = [O] x [S] x [D] e.g. 280 : high value : corrective action required
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DFMEA
Mandatory items for the DFMEA (III)
Corrective action
recommended corrective action e.g. include hysteresis test in test-program Responsible Area or Person and Completion Date e.g. test engineer NN, wk 0324
Corrected state of the circuit
Corrective action taken e.g. testprogram version B1A [O] : Revised Occurrence rank e.g. 8 (unchanged) [S] : Revised Severity rank e.g. 5 (unchanged) [D] : Revised Detection rank e.g. 1 : effect measured by standard test program [RPN] : Revised Risk Priority Number e.g. 40
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DFM E A exam p l e
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DFM E A exam p l e
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O utl i ne Quality & Safety
Cost & TTM
Automotive IC design
EMC & Automotive transients
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High Voltage High Temp.
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Hi gh V ol tage : the car-b attery
Some History
~ 1955: 12 Volt battery introduced for cranking large & high compression V8 engines
1994: workshops in USA and Europe to define the architecture for a future automotive electrical system.
1995: study at MIT for the optimal system. the highest possible DC voltage is best.
1996: futureofnominal voltage = 42battery Volt multiple low-cost lead-acid below 60 Volt under all conditions (60V = shock-hazard protection limit for DC voltages) 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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The car-b attery
March 24, 1997: Daimler-Benz presents the “Draft Specification of a Dual Voltage Vehicle electrical Power System 42V/14V”
is the de-facto standard since it is supported by the > 50 consortium
members (http://www.mitconsortium.org) The name:
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The car-b attery
Ex am p l e of a dual v ol tage po w er s y s tem 14V/42V
The system can be equipped with two batteries or with one main battery (14V or 42V) and a smaller backup battery for safety applications … 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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The car-b attery
Forecast of thevehicle 42V vehicle share in in Europe relation to the overall production
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The car-b attery
Why switching over to 42Volt battery ? Electrical power consumption in a car rises beyond the capabilities of a 12Volt battery.
Limit for 14V generator power ~ 3kW
Mean power consumption of a luxury car ~ 1.1kW (corresponds to ~ 1,5l/100km fuel in urban traffic)
The required power for all installed applications in luxury cars already exceeds the generator
capability. New applications e.g. ISG (Integrated-StarterGenerator), X-by-wire, require much higher power
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The car-b attery
Why switching over to 42Volt battery ? Alternator efficiency increases from 50% to 75% or more and creates smaller load-dump pulse (voltage supply pulse when the alternator runs at full power and the battery is disconnected)
New power hungry systems possible
Electro mechanical or hydraulic brakes Electric water pumps
“Stop -startinsystem”: Generator a single Integrates unit (ISG). Starter and
Electromechanical engine valve actuators ……
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The car-b attery
Why switching over to 42Volt battery ?
Most existing systems benefit from 42V
Heating, ventilation and air conditioning Engine cooling (eliminates belts) Electromechanic gear shifting …..
Some systems still require 14V
Incandescent ligtbulbs Low-power electronic modules Existing high-volume modules because of redesign, qualification and production costs
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The car-b attery
Specification of the 42V battery
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The car-b attery
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Other specifications
Battery reversal: no destruction - non-continuous, small voltage for 42V - continuous, full battery voltage for 12V systems
Short drops: reset may occur 30V
16V / 100msec at 16V / 16V
48V
0V @ -3V/min. & 0V
Slow increase/decrease: no unexpected behavior 48V @ +3V/min
Voltage drop test: reset behaves as expected 42V
30V
21V
30V
… and so on to … 30V
30V
20.5V 0.5V
30V
30V
20V
0V.
Electric modules see this car-battery voltage, which is further disturbed by conductive transients (ISO7637) and by ESD pulses.
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The car-b attery
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specification ofExample the current 12V battery
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The car-b attery
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Translation of the 42V battery specification into an 80V Technology requirement
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Example Lamp-failure detector
Directly connected
to the car-battery
Sense inputs can be above or below VDDA V(Rsense)
detection Accuracy < 10mV Output: low voltage CMOS levels
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Vbatt
Example
Fuse
Rsense
CMOS logic
Lamp
Switch
ESD prot.
Schaffner protection
V generator
2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
Comp.
Level shifter
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Example
Solution based on the low impedance of the source: the comparator and level shifter extract their supply from the sensor input.
ESD protection of the input with automotive-transient (Schaffner) resistant zener diodes (BVCES > 80V)
Protection for automotive transients (Schaffner) of all points connected to the car-battery by relative high value polysilicon resistors.
Resistors limit current during transient spikes
Floating resistors can handle positive and negative spikes
Accuracy not impacted if IbxRpoly > chip dimensions On-chip current loops are very inefficient antennas for electromagnetic emission and susceptibility. (“rule of thumb”, L < λ / 20). The variations are quasi-stationary and a LowFrequency modeling with L, R and C is adequate. 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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EM C s t an d ar d s i n d es i g n
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Radiated emission and susceptibility is not the major problem for IC’s. Conducted emission and susceptibility to the efficient antennas on the PCB and the cable harness is the important problem. Two EMC conductive methods, compatible with simulation, have been standardized. IEC 61967-4 (1W / 150W method) IEC 62132-4 (DPI – Direct Power Injection) Note that ISO 7637 (Schaffner) is compatible These methods model conducted EMC between
IC PCB, not the EM-field. Generated EM-fields areand function of module and wiring layouts. Limit setting for these methods is based on the accumulated experience of the chip and module manufacturers 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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EM C s t an d ar d s i n d es i g n
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System level test Radiated susceptibility
TEM cell tests ISO11452 –3
IC level tests : empirical validation and theoretical analysis Susceptibility
Conducted susceptibility
Shielded chamber tests ISO11452 –2
ISO 7637 –1
Conducted and radiated emission CISPR25 Etc…
2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
Like IEC 62132-4 (Direct Power Injection) Like ISO 7637-1 (Conductive transient pulses)
Emission
Like IEC 61967-4 (1 Ohm/150 Ohm method) slide: 75
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O utl i ne Quality & Safety
Cost & TTM
Automotive IC design EME & EMS & Automotive transients 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
High Voltage High Temp. slide: 76
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EME 1 / 150 test
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EME 1 / 150 test
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1W method measures the RF sum current in a single ground pin (RF current probe). This measures the RF return current from the various current loops (emitting antennas) of the PCB.
150W method measures the RF voltage at a single or at multiple output pins, which are connected to long PCB traces or wiring . (150W is the characteristic impedance of harness wiring harnesses in a vehicle).
Various measurement configurations are used for different types of outputs. 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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S tan d ard E M -fi el d g raph
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emission limit example: H-12-n-O
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E ME w h a t h ap p en s
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EME is generated by HF currents in external loops, which act as antennas.
Sources of the HF currents
Switching of core digital logic: glue logic, mcore, DSP, memory, clock drivers … synchronous logic generates large and sharp current peaks with large HF content Activity of the analog core circuit does not generate large current peaks
Switching the digital pins directly to the PCB fast andof large currentI/O peaks High power output drivers large current peaks to the PCB and wiring harness.
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EM E h o w t o c o p e w i t h
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Internal measures Limit the switching power to the external
Use low power circuits & circuit techniques - low power flip-flop, memory … - architecture with different clock domains - lower or adaptive supply voltage - …. Note: gated clocks are not efficient for EME if modes exist where all gates are open.
Use a more advanced technology Use on-chip capacitors
EME (HF) looks at switching power spectrum, low-power digital looks at mean dissipated power. 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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EM E h o w t o c o p e w i t h
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Shape the current peaks to the external
Slow down the switching edges - MS-FF and 2phase clock - asynchronous logic - controlled edges for I/O or power driver - ….
External and Chip-layout measures
Differential output signals e.g. CAN, LVDS … twisted-pair like lines generate less EME and are
less susceptible to EME VDD and VSS close to each other - differential signals (see above) - external decoupling easier and more efficient
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EM E h o w t o c o p e w i t h
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EME of the module is the result of the current peaks generated by the IC times the efficiency of the emitting antennas of the PCB and wiring harness. The current peaks simulated or measured with
the 1W / 150W method do not predict the correct value of the emission but give a good relative indication. A correlation with the actual measured EME of the module is required.
Each own limits for themanufacturer emission as specifies simulatedhis or measured by the IEC 61967-4 1W / 150W method.
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In the example, spectra of different current pulses are evaluated. The current pulses are simplified.
Simulated spectra
Example
Reference current pulse in existing technology. 100mA outgoing pulse 100mV in 1W probe Distributed pulse: amp. / 2, freq. x 2 HF spectrum remains, LF spectrum changes Pulse with slower edges & same power: amp. / 2 HF spectrum lower, LF spectrum remains Same logic in newer technology (2 generations): power / 2, amp. X 1, width / 2, slopes x 2 HF spectrum higher, LF spectrum lower
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Example 5/28/2018
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Spectrum of different pulses ] ] ] ] c c e b 4 4 5 4 - - - E E E F [ [ [ [
reference spectrum & distributed pulse
) ) ) ) z z z z H H H H M M M M 1 2 1 1 , , , , c c c c e e e e s s s s n 0 n n 5 n 0 . . 0 . . 5 5 0 2 1 , , , , V V V V m m m m 0 0 0 0 0 5 5 0 1 ( ( ( 1 ( s m e p u r e o y t s l c l e s l g o p e p u s o s d l e u n e t c u p h n b r c e e t e r i r w w e t f s l o e i e r d s n
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Example 5/28/2018
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CANH differential and single ended output (for the given pulse mismatch) 84 dBm V 78 V 72
A
66
D
1
2
B
3
C
4 5 6
60 – differential E CANH output [ F – 7 – h ] 54
F
48
G
7 8 9 1 0
42
H
36
I
30
1 1 1 2 1 3
K
1 4
L
24 18
M
12
N
6
O
1 7 1 8
0 105
2
o
1 5 1 6
1 9
3 4 56
8 106
z
y 2
Frequency / Hertz
2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
w
v
u
t
s
3 4 56
r
n
m
l
k
i
h
g
f
e
d
c
b
a
q p
8 107
2
3 4 56
8 108
2
3 4 56 f
8 109 Hz
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O utl i ne 5/28/2018
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Quality & Safety
Cost & TTM
Automotive IC design
& EMS &EME Automotive transients
2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
High Voltage High Temp. slide: 87
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EMS DPI tes t 5/28/2018
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Measurement set-up
The measurement set-up uses a power source For Zin(DUT) > 200W, the power source can be replaced by a voltage source. For Zin(DUT) < 50W, the power source is better replaced by a current source (Norton equivalent) Note that Zin(DUT) is frequency and signal dependent
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Simulation models
Simulation model for Zin > 200 W Guideline for amplitude AV AV = 22V @ 5W DPI (level 1) AV = 7V @ 0.5W DPI (level 2) AV = 2.2V @ 50mW DPI (level 3)
Simulation model for Zin < 50W Guideline for amplitude AI
50 Zin 50 Zin
AI Pinj
Pinj : required immunity level 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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E MS c o m p l i an c e lev e l s 5/28/2018
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Not all I/O pins of the IC are connected to the wiring harness and unprotected.
Level 1: direct connection to the environment
Level 2: direct connection to the environment but some external low-pass filtering is available. e.g. signal conditioning input stages, direct sensor interfaces …
Level 3: No direct connection of the I/O to the environment. e.g. interface chips connected to sensor chips in the same module, A/D converter input stages …
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EMS caused malfunction is not always detrimental Class A: all functions of a device/system perform within the specification limits during and after the exposure to the disturbance. Class B: some functions can go temporarily beyond the specification limits during the exposure. The system recovers automatically after the exposure. Class C: some functions can go temporarily beyond the specification limits during the exposure. The system does not recover automatically but requires operator intervention or system reset. Class D: degradation or loss of function, which is not self-recoverable due to damage of the IC or loss of data. 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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E MS w h a t h ap p en s 5/28/2018
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The incident high-frequency electro-magnetic power is partially absorbed in the IC and causes disturbances in different ways: 1) Large HF voltages into a high-impedance node 2) Large HF currents into a low-impedance node 3) Large HF power into a node, which switches from high-impedance to low-impedance at device limits, at protection voltages or at frequency breakpoints. Rectification/pumping, Parasitic devices/currents and Power dissipation are the three important disturbing effects of EMS 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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1) Large HF voltages into a high-impedance node
Medium power dissipation e.g. 9% of DPI for 1kW
Linear large signal behavior of components and structures in the signal path no effect
Non-linear behavior of components and structures in the signal path rectification effects (pumping) on capacitors in the signal path. : important disturbance on a chip e.g. bias pumping
Capacitive coupling input devices into the substrate e.g. large driver in the OFF state, ESD structures substrate currents and substrate bounce : important effect for latch-up, pumping …
Capacitive coupling to adjacent devices or structures e.g. Cm = 100fF gives | Zm | = 10 kW at 159MHz
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2) Large HF currents into a low-impedance node
Large power dissipation e.g. 83% of DPI for 10 W : Important effect on chip.
Linear large current behavior of components and structures in the current path no effect
Non-linear large current behavior of components and structures in the current path rectification effects (pumping) in the signal path: important disturbing effect on a chip.
Inductive coupling to adjacent devices or structures : only important for bondwires and leadframe e.g. 100mA @ 159MHz gives ~ 750mV in an adjacent, open wire.
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3) Large HF power into a node, which switches from high-impedance to low-impedance
e.g. at device limits or at protection voltages or at frequency breakpoints Combines high voltage and large currents Large power dissipation in clipping devices or protection structures Important effect clipping activates parasitic devices & current paths large current peaks in the supply lines or other pins generates EME in other loops on the PCB. large current peaks in the substrate through parasitic devices important effect e.g. latch-up, substrate coupling … Nature of the signal path can change with frequency important effect, difficult to cope with. 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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Guidelines
Use good large signal and HF models
Include all parasitic components of the devices (internal and external)
Design, simulate and layout with all parasitics
Avoid rectification : make circuits symmetrical
Differential circuit topologies and layout
Limit voltage input range of sensitive devices such that they do not go in non-linear behavior or in degradation conditions.
Limit frequency input range of sensitive devices : band-limited signals
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Make circuits robust for rectification
Design for high CMRR & PSRR
Keep internal node impedances low
Keep sensitive nodes on-chip
Avoid / control parasitic devices and currents
Use protection devices that clip beyond the required EMS injection levels
Make protection levels symmetrical
with respect to the signal Minimize substrate currents
Collect substrate currents in controlled points
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Example 5/28/2018
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Rectification LF: both the NMOS/OpAmp circuit and the LP-filter follow the input variations Iout is correct MF: the NMOS/OpAmp circuit follows Vin and conducts a linear current in the PMOS diode. VgsPMOS(Id) is non-linear and the LP-Filter output voltage is the mean of the rectified VgsPMOS (pumping) Iout decreases HF: the NMOS/OpAmp becomes a Source follower which rectifies the input current, The rectified current is largely linearized in the PMOS diode before the LP-filter. Iout returns to correct value
LF: below LP-filter & OpAmp GBW MF: between LP-filter & OpAmp GBW HF: above LP-filter & OpAmp GBW Note: at high DPI voltages, the ESD and NMOS diodes can also rectify the current (below OpAmp GBW)
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Example 5/28/2018
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Current source error (filtered)
Effect of rectification on the
as function the DPI source voltage and of frequency
output current (pumping) Iout (%)
Iout (% of Iout without DPI source) 99%
Vin : 500kHz – 1.0*Aref
100 0.5 Vin
98%
90
95%
80 Vin : 500kHz – 1.5*Aref
1.0 Vin
90%
70
80% 1.5 Vin
50%
60
3.0 Vin
2.0 Vin
50 frequency Vin
0% 100k
1M
10M
(Hz)
Time/µsec 40
20
30
40
50
60
70
Vin: DPI source voltage (arbitrary units)
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Example 5/28/2018
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Rectification in a differential comparator
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Example 5/28/2018
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Further EMS improvement
Input Attenuator
Input Filter
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large improvement (only HF) also for HF signals beyond the supply voltages no sensitivity reduction slide: 101
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Example
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Effect of the EMS improvements EMI
(1) original circuit with current source
DPI source strength (relative units)
100
(2) current source replaced by resistor
5 3
(3) with input attenuator (4) with input filter
4
(5) with input attenuator and input filter
2
10
1
1
frequency 1M
10M
100M
1G (Hz)
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Example
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Parasitic currents & substrate currents Example: substrate currents in an ESD protection structure
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Ty p es o f S u b s t r at e C u r r e n t
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Three important types of substrate current
Substrate currents, injected into the substrate by a PNP transistor where the substrate is the collector, by diode breakdown, by impact ionization … Effect: substrate biasing, which can activate other parasitic transistors or cause latch-up. Substrate currents, extracted from the substrate by a forward biased diode. This diode becomes a lateral NPN with any other neighboring N-region as collector. Effect: extraction of currents from other distant N-regions (up to millimeters distance). Capacitive currents due to junction or oxide capacitors, coupled to the substrate. Effect: substrate biasing (bounce) & capacitive coupling to other junctions or oxide capacitors
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Example
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Problem: for the input strapped to ground, the output toggles from low to high for low EM injection Cause: substrate current extraction from the NMOS drain during negative pulses overrides the bias current
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Example
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Solution: new ESD protection circuit without substrate NPN, back-to-back zener diodes and shielding of the NMOS gate. Vbat Vcc regulator Vbias
Isub
Vin
large current pull-up
Vout
DPI Source ESD protection for positive and negative battery voltages
LP-filter
back-to-back ESD z ener diodes
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Schmitt trigger with shielded NMOS-gate slide: 106
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O utl i ne
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Quality & Safety
Cost & TTM
Automotive IC design EMC & Automotive transients
High Voltage High Temp.
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A u t o m o t i v e t r an s i en t s
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Standard test pulse 1
Standard test pulse 2
Disconnection of a supply from an inductive load, while the device under test remains in parallel with the inductive load (ISO 7637, part1)
Interruption of the current in an inductor in series with the device under test (ISO 7637, part1)
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A u t o m o t i v e t r an s i en t s
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Standard test pulses 3a and 3b These pulses simulate transient, occurring as a result of switching processes. They are influenced by distributed capacitances and inductance of the wiring harness. (ISO 7637, part1)
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A u t o m o t i v e t r an s i en t s
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Standard test pulse 4
Standard test pulse 5
BATTERY VOLTAGE DROP: During motor start, the battery is overloaded and the voltage drops, especially in cold weather.
LOAD DUMP: This happens when the battery is disconnected while it is being charged by the alternator.
(ISO 7637, part1)
(ISO 7637, part1)
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A u t o m o t i v e t r an s i en t s
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Standard test pulses 5 : LOAD DUMP clamped Load dumpLoad amplitude alternator speed field of the excitation. dump depends duration on depends on the timeand constant field excitation circuit and the amplitude. Today most alternators have an internal protection against load dump surge. The 6 zener diodes clamp above 24Volt.
For alternators with autoprotection
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A u t o m o t i v e t r an s i en t s
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Standard test pulse 6
Standard test pulse 7
This disturbance occurs when the ignition. current is interrupted.
Simulates the decrease of the magnetic field of the alternator when the engine stops.
(ISO 7637, part1)
(ISO 7637, part1)
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A u t o m o t i v e t r an s i en t s
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The customer has to define the “Level of Test”
according the needs of his application. Test pulses
Test levels
(ISO 7637, part1)
(values agreed to between car manufacturer and supplier)
Pulse type
Series resistance
Impulse duration
I
II
II
IV
1
10 W
2 ms
-25V
-50V
-75V
-100V
2
10 W
50 ms
+25V
+25V
+75V
+100V
3a
50 W
0.1 ms
-40V
-75V
-110V
-150V
+25V
+50V
+75V
+100V
9V
7V
6V
5V
(12V -3V) +35V
(12V-5V) +50V
(12V-6V) +80V
(12V-7V) +120V
3b 4
10 W
5
1W
up to 20 sec up to 400ms
Typical requirement today: Level IV, except Load dump: Level II - III. aaaaaaaaaaaaaaaaaaaa 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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T r a n s i e n t s – W h at h a p p e n s
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Automotive transients (ISO-7637-1): electrical transient conduction along the supply lines only. other IC pins indirectly connected to supply via load devices (outputs) or sensors (inputs)
ISO-7637-1 describes two types of pulses
Pulse 4 defines the minimum battery voltage. Note: battery voltage = module supply voltage. Internal IC supply voltage = module supply – reverse battery diode – module supply regulator – internal supply regulator of the chip.
Pulses 1, 2, 3a, 3b, 5, 6 and 7 describe high voltage, high power transient disturbances on the supply line.
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T r a n s i e n t s – w h a t h ap p en s
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The high voltage, very high power transient disturbances can cause excessive substrate currents and power dissipation in the IC if they exceed the voltage capability of the chip. The IC can only survive if:
Transient peak voltages blocked e.g. high-voltage techno or lower level transient spec Transient voltages externally limited e.g. static with zener diodes (clamped load dump) e.g. dynamic limitation with RC (all other pulses) e.g. reverse battery protection diode Peak currents internally or externally limited e.g. series impedance of load or sensor or external R e.g. low impedance output dynamically switched-off
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A u t o m o t i v e t r an s i en t s – e x am p l e
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Typical input supply protection reverse
bias diode RC-filter (pulses 1, 2, 3a, 3b)
Low-side NDMOS driver with ± 100V input range NDMOS
with reverse voltage diode (PNP) NDMOS drive logic with slope control Clamp
circuit to prevent lateral NPN activation during fast negative pulses below ground
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A u t o m o t i v e t r an s i en t s – ex a m p l e
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Bandgap with improved tolerance for substrate currents and temperature Transient or EMC induced substrate current extraction and high temperature leakage currents from all N/Sub diodes. (NPN PMOS N-well, NMOScollectors, S/D diffusions) Transient or EMC induced current injection into the substrate, connected to AGND. Capacitive coupling through all N/Sub diode capacitors No direct effect on the most sensitive bandgap circuits: bipolar PTAT and OpAmp input stage. 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
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Cost & TTM
Result Quality & Safety
Fully compliant Automotive Automotive IC design IC design EMC & Automotive transients 2004 11 29 AID-EMC / HC / Electronic Circuits in an Automotive Environment
High Voltage High Temp. slide: 118
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Resul t
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Combination of Silicon and Design Technology for Automotive Applications
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Ackowledgments
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This work would not have been possible without the cooperation and dedication of many colleagues at AMI Semiconductor. I would like to thank in particular: Geert Vandensande, Michel De Mey, Aarnout Hans Wieers, GuggSchweiger, Eddy Blansaer, Luc Dhaeze, Koen Geirnaert, Herve Branquart and many others.
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Referenc es – 1
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P. Thoma, “Risks for the automotive industry with regard to the market shift in world wide semiconductor demand (in German)”, VDI Berichte nr. 1287, pp 1-12, 12 September 1996. “Potential Failure Mode and Effect analysis (FMEA)” , 3th edition, April 2001, Chrysler Corporation, ford Motor Company, General Motors Corporation.
IEC 61967-4, “Integrated Circuits – Measurement of Electromagnetic Emissions – 150 kHz to 1 GHz, Part 4: Measurement of Conducted Emission, 1Ohm/150Ohm Method”.
IEC 62132-4, “Integrated Circuits – Measurement of Electromagnetic Immunity – 150 kHz to 1 GHz, Part 4: Direct RF Power Injection Method”.
ISO 7637-1 , ISO 7637-2, Road Vehicles – Electrical Disturbance by Conduction and Coupling, vehicles with nominal 12V (part 1) and 24V (part 2) supply voltages – Electrical transient conduction along supply lines only.
J. Kassakian,Acceptance” “Challenges, of the New 42Volt Architecture and its International VDI Berichte nr. 1415, pp. 21-35, 08Progress October on 1998
Hans-Dieter Hartmann, “Standardisation of the 42V PowerNet - History, Current Status, Future Action” , HDT conference "42V-PowerNet: The first Solutions", Villach, Austria, September 28-29, 1999
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Referen c es - 2
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K. Ehlers, “The effect of the 3-litre car on the architecture of the automotive electrical system“ , 5.98, http://www.sci-worx.com → Partner → Forum Bordnetzarchitektur Ivars G. Finvers, J. W. Haslett, F.N. Trofimenkoff, “A High Temperature Precision Amplifier” , IEEE Journal of Solid-state Circuits, vol. 30, pp 120-128, February 1995. Paul C. de Jong, “Smart Sensor systems for High-Temperature Applications” , PhD dissertation, T.U. Delft, the Netherlands, November 1998.
Paul C. de Jong, Gerard C. M. Meijer, Arthur H. M. van Roermond, “A 300°C , IEEE Journal of Solid-State Circuits, Dynamic-Feedback Instrumentation Amplifier” vol. 33, pp. 1999-2009, December 1998.
“High Temperature Electronics” , edited by F.Patrick McCluskey, Richard Grzybowski, Thomas Podlesak, CRC Press, Boca Raton, Florida, 1997, ISBN 08493-9623-9
W. Wondrak, A. Dehbi, G. Umbach, A. Blessing, R. Getto, F. P. Pesl and W. Unger, “Passive Components for High Temperatures: Application Potential and Technological Challenges” AEC Reliability Workshop, Nashville 2004
Ron Schmitt, “Understanding Electromagnetic Fields and Antenna Radiation takes (almost) no Math” , EDN magazine, March 2, 2000, pp 77-88.
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Referen c es - 3
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Wolfgang Horn, Heinz Zitta, “ A Robust Smart Power Bandgap Reference Circuit for Use in an Automotive Environment” , IEEE Journal of Solid-state Circuits, vol. 37, pp 949-952, July 2002.
M. De Mey, “Robustness in Analog Design” , Proceedings of the 12th Workshop on the Advances in Analogue Circuit Design, AACD 2003, 15-17 April 2003, Graz Austria
B. Deutschmann, “Improvement of System Robustness through EMC Optimization” , Proceedings of the 12th Workshop on the Advances in Analogue Circuit Design, AACD 2003, 15-17 April 2003, Graz Austria
D. Temmen, “Noise rejection of clocked interference sources (in German)” , VDI Berichte nr. 1646, pp. 599-618, 27 September 2001
Robert J. Widlar, “Controlling Substrate Currents in Junction-Isolated IC’s” , IEEE Journal of Solid-state Circuits, vol. 26, pp 1090-1097, August 1991.
Bruno Murari, “Power Integrated Circuits, Problems, Tradeoffs and Solutions” , IEEE Journal of solid-state Circuits, vol 13, pp 307-319, June 1978
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